JP2014053459A - Process of manufacturing photoelectric conversion element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a process of manufacturing a photoelectric conversion element in which a photoelectric conversion element can be manufactured in a simple process.SOLUTION: The process of manufacturing a photoelectric conversion element includes a step to install a mask material by a physical vapor deposition method.

Description

  The present invention relates to a method for manufacturing a photoelectric conversion element.

  In recent years, a solar cell that directly converts solar energy into electric energy has been rapidly expected as a next-generation energy source particularly from the viewpoint of global environmental problems. There are various types of solar cells, such as those using compound semiconductors or organic materials, but the mainstream is currently using silicon crystals.

  Currently, the most manufactured and sold solar cells have a structure in which electrodes are respectively formed on a light receiving surface that is a surface on which sunlight is incident and a back surface that is opposite to the light receiving surface.

  However, when an electrode is formed on the light-receiving surface, there is reflection and absorption of sunlight at the electrode, so the amount of sunlight incident by the area of the electrode is reduced, so the electrode is formed only on the back surface. Development of solar cells is underway (see, for example, Patent Document 1).

JP 2010-80887 A

  Hereinafter, an example of a method for manufacturing a solar cell in which an electrode is formed only on the back surface will be described with reference to schematic cross-sectional views of FIGS. First, as shown in FIG. 16, an i-type amorphous material is formed on the back surface of a c-Si (n) substrate 101 made of n-type single crystal silicon having a texture structure (not shown) on the light receiving surface. An a-Si (i / p) layer 102 in which a silicon film and a p-type amorphous silicon film are stacked in this order is formed.

  Next, as shown in FIG. 17, an i-type amorphous silicon film and an n-type amorphous silicon film are laminated in this order on the light-receiving surface of the c-Si (n) substrate 101. A Si (i / n) layer 103 is formed.

  Next, as shown in FIG. 18, a photoresist film 104 is formed on a part of the back surface of the a-Si (i / p) layer 102. Here, the photoresist film 104 is formed by applying a photoresist to the entire back surface of the a-Si (i / p) layer 102 and then patterning the photoresist by a photolithography technique and an etching technique.

  Next, as shown in FIG. 19, the back surface of the c-Si (n) substrate 101 is exposed by etching a part of the a-Si (i / p) layer 102 using the photoresist film 104 as a mask. .

  Next, as shown in FIG. 20, after removing the photoresist film 104, as shown in FIG. 21, the back surface of the a-Si (i / p) layer 102 exposed by removing the photoresist film 104 and etching are removed. A-Si (i / n) in which an i-type amorphous silicon film and an n-type amorphous silicon film are laminated in this order so as to cover the back surface of the c-Si (n) substrate 101 exposed by Layer 105 is formed.

  Next, as illustrated in FIG. 22, a photoresist film 106 is formed on a part of the back surface of the a-Si (i / n) layer 105. Here, the photoresist film 106 is formed by applying a photoresist to the entire back surface of the a-Si (i / n) layer 105 and then patterning the photoresist by a photolithography technique and an etching technique.

  Next, as shown in FIG. 23, the back surface of the a-Si (i / p) layer 102 is etched by etching a part of the a-Si (i / n) layer 105 using the photoresist film 106 as a mask. Expose.

  Next, as shown in FIG. 24, after removing the photoresist film 106, as shown in FIG. 25, the back surface of the a-Si (i / n) layer 105 exposed by removing the photoresist film 106 and etching are removed. A transparent conductive oxide film 107 is formed so as to cover the back surface of the a-Si (i / p) layer 102 exposed by the above.

  Next, as shown in FIG. 26, a photoresist film 108 is formed on a part of the back surface of the transparent conductive oxide film 107. Here, the photoresist film 108 is formed by applying a photoresist to the entire back surface of the transparent conductive oxide film 107 and then patterning the photoresist by a photolithography technique and an etching technique.

  Next, as shown in FIG. 27, a part of the transparent conductive oxide film 107 is etched by using the photoresist film 108 as a mask, so that the a-Si (i / p) layer 102 and the a-Si (i / n) are etched. ) Expose the back surface of the layer 105.

  Next, as shown in FIG. 28, after the photoresist film 108 is removed, the a-Si (i / p) layer 102 and the a-Si (i / n) layer 105 are exposed as shown in FIG. A photoresist film 109 is formed so as to cover the back surface and a part of the back surface of the transparent conductive oxide film 107. Here, as for the photoresist film 109, a photoresist is applied to the entire exposed back surface of the a-Si (i / p) layer 102 and the a-Si (i / n) layer 105 and the entire back surface of the transparent conductive oxide film 107. Later, it is formed by patterning a photoresist by photolithography and etching techniques.

  Next, as shown in FIG. 30, a back electrode layer 110 is formed on the entire back surface of the transparent conductive oxide film 107 and the photoresist film 109.

  Next, as shown in FIG. 31, the back electrode layer 110 is left only on a part of the surface of the transparent conductive oxide film 107, and the photoresist film 109 and the back electrode layer 110 are removed by lift-off.

  Next, as illustrated in FIG. 32, an antireflection film 111 is formed on the surface of the a-Si (i / n) layer 103.

  However, in the above solar cell manufacturing method, it is necessary to carry out the steps of coating the photoresist and patterning the photoresist by the photolithography technique and the etching technique four times, and the solar cell in which the electrode is formed only on the back surface. There is a problem that the manufacturing process is very complicated.

  In view of the above circumstances, an object of the present invention is to provide a method for manufacturing a photoelectric conversion element that can be manufactured by a simple manufacturing process.

  The present invention includes a step of forming a second conductive type first amorphous film on one surface of a first conductive type semiconductor substrate, and a step of forming a first conductive film on a part of the surface of the first amorphous film. A step of installing one mask material, a step of installing a second mask material by physical vapor deposition so as to cover the first amorphous film and the first mask material, and the first mask material And a step of exposing the surface of the first amorphous film by removing the second mask material on the first mask material, and removing at least a part of the exposed region of the first amorphous film Forming a first conductive type second amorphous film so as to cover the region from which the first amorphous film has been removed and the second mask material, and removing the second mask material A step of exposing the surface of the first amorphous film, thereby producing a photoelectric conversion element.

  Here, in the method for manufacturing a photoelectric conversion element of the present invention, the step of installing a third mask material on the boundary between the first amorphous film and the second amorphous film, and the third mask material It is preferable that the method further includes a step of forming an electrode layer on the entire surface of the semiconductor substrate after the placement of the substrate, and a step of removing the third mask material and the electrode layer on the third mask material.

  In the method for manufacturing a photoelectric conversion element of the present invention, the step of installing the second mask material is preferably performed by a vapor deposition method or a sputtering method.

  In the method for manufacturing a photoelectric conversion element of the present invention, the step of exposing the surface of the first amorphous film may be performed by a second member on the second mask material and the second mask material by a peeling member. It is preferable to include a step of peeling the crystalline film.

  In addition, the method for manufacturing a photoelectric conversion element of the present invention further includes a step of forming an i-type amorphous film over the entire surface of the semiconductor substrate before the step of forming the first amorphous film. Is preferred.

  Furthermore, in the method for manufacturing a photoelectric conversion element of the present invention, the step of removing at least part of the exposed region of the first amorphous film leaves an i-type amorphous film on the surface of the semiconductor substrate. It is preferable to be performed as follows.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the photoelectric conversion element which can be manufactured with a simple manufacturing process can be provided.

It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrated about a part of manufacturing process of the manufacturing method of the photoelectric conversion element of embodiment. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface. It is typical sectional drawing illustrating a part of manufacturing process of an example of the manufacturing method of the solar cell in which the electrode was formed only in the back surface.

  Hereinafter, with reference to the schematic sectional views of FIGS. 1 to 15, a method for manufacturing a photoelectric conversion element according to an embodiment which is an example of a method for manufacturing a photoelectric conversion element of the present invention will be described. In the drawings of the present invention, the same reference numerals represent the same or corresponding parts.

  First, as shown in FIG. 1, the first i-type amorphous film 2 made of i-type amorphous silicon and the p-type amorphous silicon are formed on the entire back surface of the semiconductor substrate 1 made of n-type single crystal silicon. The first p-type amorphous film 3 is laminated in this order, for example, by a plasma CVD (Chemical Vapor Deposition) method.

  The semiconductor substrate 1 is not limited to a substrate made of n-type single crystal silicon. For example, a conventionally known semiconductor substrate may be used. Further, as the semiconductor substrate 1, for example, a semiconductor substrate in which a texture structure (not shown) is previously formed on the light receiving surface of the semiconductor substrate 1 may be used.

  Although the thickness of the semiconductor substrate 1 is not specifically limited, For example, it can be 100 micrometers or more and 300 micrometers or less, Preferably it can be 100 micrometers or more and 200 micrometers or less. Further, the specific resistance of the semiconductor substrate 1 is not particularly limited, but may be, for example, 0.1 Ω · cm or more and 1 Ω · cm or less.

  The first i-type amorphous film 2 is not limited to a film made of i-type amorphous silicon. For example, a conventionally known i-type amorphous semiconductor film may be used. The thickness of the first i-type amorphous film 2 is not particularly limited, but may be, for example, 5 nm or more and 10 nm or less.

  The first p-type amorphous film 3 is not limited to a film made of p-type amorphous silicon. For example, a conventionally known p-type amorphous semiconductor film may be used. The thickness of the first p-type amorphous film 3 is not particularly limited, but can be, for example, 5 nm or more and 10 nm or less.

As the p-type impurity contained in the first p-type amorphous film 3, for example, boron can be used. The p-type impurity concentration of the first p-type amorphous film 3 is, for example, 5 × 10 ¹⁹ / Cm ³ or so.

  Note that “i-type” in this specification means that n-type or p-type impurities are not intentionally doped. For example, after manufacturing a photoelectric conversion element, n-type or p-type impurities are not present. Inevitable diffusion may cause n-type or p-type conductivity.

  In the present specification, “amorphous silicon” includes hydrogen atoms terminated with dangling bonds of silicon atoms such as amorphous silicon hydride.

  Next, as shown in FIG. 2, a third i-type amorphous film 4 made of i-type amorphous silicon and a first n-type made of n-type amorphous silicon are formed on the entire light-receiving surface of the semiconductor substrate 1. The type amorphous film 5 is laminated in this order, for example, by a plasma CVD method.

  The third i-type amorphous film 4 is not limited to a film made of i-type amorphous silicon. For example, a conventionally known i-type amorphous semiconductor film may be used. The thickness of the third i-type amorphous film 4 is not particularly limited, but may be, for example, 5 nm or more and 10 nm or less.

  The first n-type amorphous film 5 is not limited to a film made of n-type amorphous silicon. For example, a conventionally known n-type amorphous semiconductor film may be used. The thickness of the first n-type amorphous film 5 is not particularly limited, but can be, for example, 5 nm or more and 10 nm or less.

As the n-type impurity contained in the first n-type amorphous film 5, for example, phosphorus can be used, and the n-type impurity concentration of the first n-type amorphous film 5 is, for example, 5 × 10 ¹⁹ / Cm ³ or so.

  Next, as shown in FIG. 3, a first mask material 6 is placed on a part of the back surface of the first p-type amorphous film 3.

  Although the 1st mask material 6 is not specifically limited, For example, a metal metal mask etc. can be used.

  Next, as shown in FIG. 4, a second mask material 7 is installed by physical vapor deposition so as to cover the first p-type amorphous film 3 and the first mask material 6. As a result, the entire back surface of the semiconductor substrate 1 is covered with the second mask material 7.

  The method of installing the second mask material 7 is not particularly limited as long as it is a physical vapor deposition method, but is preferably performed by a vapor deposition method or a sputtering method. When the vapor deposition method or the sputtering method is used as a method for installing the second mask material 7, the second mask material 7 can be simply installed.

  The second mask material 7 is not particularly limited as long as it can be set by physical vapor deposition, and for example, aluminum, silver, vanadium, platinum, or the like can be used.

  Next, as shown in FIG. 5, the first mask material 6 is removed together with the second mask material 7 on the first mask material 6. Thereby, the back surface of the first p-type amorphous film 3 is exposed from the removed portion of the first mask material 6.

  The method for removing the first mask material 6 is not particularly limited. For example, when the first mask material 6 is made of a metal mask, the first mask material is formed from the back surface of the first p-type amorphous film 3. This can be done by removing 6.

  Next, as shown in FIG. 6, the first i-type amorphous film 2 and the first p-type amorphous film 3 exposed from the second mask material 7 are removed. Thereby, the back surface of the semiconductor substrate 1 is exposed from the removed portion of the first i-type amorphous film 2 and the first p-type amorphous film 3.

  The method for removing the first i-type amorphous film 2 and the first p-type amorphous film 3 is not particularly limited, but it is preferable to use at least one of dry etching and wet etching using hydrofluoric acid. . As a method of removing the first i-type amorphous film 2 and the first p-type amorphous film 3, when at least one of dry etching and wet etching using hydrofluoric acid is adopted, the first The i-type amorphous film 2 and the first p-type amorphous film 3 can be easily removed.

  In addition, as shown in FIG. 14, only the first p-type amorphous film 3 exposed from the second mask material 7 is removed, and the first i-type amorphous film 2 is a semiconductor substrate. 1 may be left on the back surface. In this case, the process described later can be performed with the back surface of the semiconductor substrate 1 protected by the first i-type amorphous film 2, and contamination of the back surface of the semiconductor substrate 1 can be prevented. Therefore, generation of interface states that cause carrier trapping at the interface between the back surface of the semiconductor substrate 1 and the first i-type amorphous film 2 can be suppressed. Thereby, it exists in the tendency for the characteristic of the photoelectric conversion element manufactured by the manufacturing method of the photoelectric conversion element of embodiment to become a favorable thing.

  Next, as shown in FIG. 7, the back surface of the semiconductor substrate 1 exposed by removing the first i-type amorphous film 2 and the first p-type amorphous film 3, and the second mask material The second i-type amorphous film 8 and the second n-type amorphous film 9 are laminated in this order, for example, by plasma CVD so as to cover 7. As a result, the entire back surface of the semiconductor substrate 1 is covered with the second i-type amorphous film 8 and the second n-type amorphous film 9.

  Next, as shown in FIG. 8, the back surface of the first p-type amorphous film 3 is exposed by removing the second mask material 7. Here, the second i-type amorphous film 8 and the second n-type amorphous film 9 on the second mask material 7 are removed together with the second mask material 7 by lift-off.

  The method for removing the second mask material 7 is not particularly limited. For example, as shown in FIG. 15, a peeling member 14 is adhered to the back surface of the second n-type amorphous film 9 to remove the second mask material 7. It is preferably performed by peeling off with the member 14. In this case, the second mask material 7 can be easily removed.

  As the peeling member 14, the second mask material 7, the second i-type amorphous film 2, and the first p-type amorphous film 3 are left on the back surface of the semiconductor substrate 1 while being left behind. The member is not particularly limited as long as it is a member capable of removing only the type amorphous film 8 and the second n type amorphous film 9, and an adhesive sheet or the like can be used, for example.

  Next, as shown in FIG. 9, on the boundary between the back surface of the first p-type amorphous film 3 and the back surface of the second n-type amorphous film 9, the third The mask material 10 is installed. At this time, the first p-type amorphous film 3 and the second n-type amorphous film 9 are separated by the third mask material 10 in a plan view when the semiconductor substrate 1 is viewed from the back side. It has become a state.

  Although the 3rd mask material 10 is not specifically limited, For example, a metal metal mask etc. can be used.

  Next, as shown in FIG. 10, the first electrode layer 11 is formed on the entire back surface of the semiconductor substrate 1 after the third mask material 10 is installed. As a result, the first electrode layer 11 includes the entire back surface of the first p-type amorphous film 3, the entire back surface of the second n-type amorphous film 9, and the back surface of the third mask material 10. Formed on the entire surface.

  As the first electrode layer 11, a conductive material can be used, and for example, ITO (Indium Tin Oxide) or the like can be used.

  The first electrode layer 11 can be formed, for example, by a sputtering method, and the thickness of the first electrode layer 11 can be, for example, 80 nm or less.

  Next, as shown in FIG. 11, the second electrode layer 12 is formed on the entire back surface of the semiconductor substrate 1 after the first electrode layer 11 is formed. Thereby, the second electrode layer 12 is formed on the entire back surface of the first electrode layer 11.

  As the second electrode layer 12, a conductive material can be used, and for example, aluminum or the like can be used.

  The second electrode layer 12 can be formed by, for example, a sputtering method, and the thickness of the second electrode layer 12 can be, for example, 0.5 μm or less.

  Next, as shown in FIG. 12, the third mask material 10 is removed together with the first electrode layer 11 and the second electrode layer 12 on the third mask material 10. Thereby, the back surface of the first p-type amorphous film 3 and the back surface of the second n-type amorphous film 9 are exposed from the removed portion of the third mask material 10.

  The method for removing the third mask material 10 is not particularly limited. For example, when the third mask material 10 is made of a metal mask, the back surface of the first p-type amorphous film 3 and the second n-type. This can be done by removing the third mask material 10 from the back surface of the amorphous film 9.

  Next, as shown in FIG. 13, an antireflection film 13 is laminated on the entire surface of the first n-type amorphous film 5 by, for example, a sputtering method.

  As the antireflection film 13, for example, a silicon nitride film can be used, and the thickness of the antireflection film 13 can be set to, for example, about 100 nm.

  As described above, the p-electrode (the first electrode layer 11 and the second electrode layer 12 on the back surface of the first p-type amorphous film 3) and the n-electrode ( The first electrode layer 11 and the second electrode layer 12) on the back surface of the second n-type amorphous film 9 are formed only on the back surface side of the semiconductor substrate 1 and are not formed on the light receiving surface. The photoelectric conversion element of embodiment which has is manufactured.

  According to the manufacturing method of the photoelectric conversion element of the embodiment, as in the method shown in FIGS. 16 to 32, the steps of applying the photoresist and patterning the photoresist by the photolithography technique and the etching technique are performed four times. Since it is not necessary to perform, a photoelectric conversion element can be manufactured with a simpler manufacturing process.

  In the method for manufacturing the photoelectric conversion element of the embodiment, the second mask material 7 is installed by physical vapor deposition, and the first mask material 6 and the third mask material 10 are installed as metal masks. Since a precise process such as photoresist patterning in the method shown in FIGS. 16 to 32 is not required, a photoelectric conversion element can be manufactured with a simpler manufacturing process also from this viewpoint.

  Further, for example, as shown in FIG. 14, only the first p-type amorphous film 3 exposed from the second mask material 7 is removed, and the first i-type non-layer is formed on the back surface of the semiconductor substrate 1. If the crystalline film 2 is left, contamination of the back surface of the semiconductor substrate 1 is prevented, which causes carrier trapping at the interface between the back surface of the semiconductor substrate 1 and the first i-type amorphous film 2. Since a photoelectric conversion element can be manufactured while suppressing generation of interface states, a photoelectric conversion element having favorable characteristics can be manufactured.

  Further, for example, as shown in FIG. 15, when the peeling member 14 is adhered on the back surface of the second n-type amorphous film 9 and peeled off by the peeling member 14, the second mask material is used. Since 7 can be removed by a simple process, the photoelectric conversion element can be manufactured by a simpler manufacturing process.

  For the above reasons, according to the method for manufacturing a photoelectric conversion element of the embodiment, the photoelectric conversion element can be manufactured by a simple manufacturing process.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  INDUSTRIAL APPLICABILITY The present invention can be used for a method for manufacturing a photoelectric conversion element, and can be preferably used for a method for manufacturing a solar cell having an electrode on the back surface.

  DESCRIPTION OF SYMBOLS 1 Semiconductor substrate, 1st i-type amorphous film, 3rd 1st p-type amorphous film, 4th 3rd i-type amorphous film, 5th 1st n-type amorphous film, 6th 1 mask material, 7 second mask material, 8 second i-type amorphous film, 9 second n-type amorphous film, 10 third mask material, 11 first electrode layer, 12 second 2 electrode layers, 13 antireflection film, 14 peeling member, 101 c-Si (n) substrate, 102 a-Si (i / p) layer, 103 a-Si (i / n) layer, 104 photoresist film , 105 a-Si (i / n) layer, 106 photoresist film, 107 transparent conductive oxide film, 108, 109 photoresist film, 110 back electrode layer, 111 antireflection film.

Claims (6)

Forming a second conductive type first amorphous film on one surface of the first conductive type semiconductor substrate;
Placing a first mask material on a part of the surface of the first amorphous film;
Installing a second mask material by physical vapor deposition so as to cover the first amorphous film and the first mask material;
Exposing the surface of the first amorphous film by removing the first mask material and the second mask material on the first mask material;
Removing at least a portion of the exposed region of the first amorphous film;
Forming a first conductive type second amorphous film so as to cover the region from which the first amorphous film has been removed and the second mask material;
And a step of exposing the surface of the first amorphous film by removing the second mask material. Installing a third mask material on a boundary between the first amorphous film and the second amorphous film;
Forming an electrode layer over the entire surface of the semiconductor substrate after the third mask material is installed;
The method for manufacturing a photoelectric conversion element according to claim 1, further comprising: removing the third mask material and the electrode layer on the third mask material.   The method of manufacturing a photoelectric conversion element according to claim 1, wherein the step of installing the second mask material is performed by a vapor deposition method or a sputtering method.   The step of exposing the surface of the first amorphous film includes a step of peeling the second mask material and the second amorphous film on the second mask material with a peeling member. The manufacturing method of the photoelectric conversion element of any one of Claim 1 to 3.   5. The method according to claim 1, further comprising a step of forming an i-type amorphous film over the entire surface of the semiconductor substrate before the step of forming the first amorphous film. The manufacturing method of the photoelectric conversion element of description.   6. The step of removing at least a part of the exposed region of the first amorphous film is performed so as to leave the i-type amorphous film on the surface of the semiconductor substrate. The manufacturing method of the photoelectric conversion element of description.

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