JP2013135181A - Flexible device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To restrain damage of an electron element due to laser light radiation in a step of separating a support substrate from a flexible film.SOLUTION: A flexible device manufacturing method includes: an adhesive layer step for forming an adhesive layer 14 on a support substrate 13; a flexible film formation step of forming a flexible film 11 on the support substrate 13; an electron element formation step of forming an electron element 12 on the flexible film 11; and a separation step of separating the support substrate 13 from the flexible film 11 by radiating laser light 15 to the adhesive layer 14. In the adhesive layer formation step, the adhesive layer 14 is formed in a peripheral edge region outside a region on the support substrate 13 corresponding to a region (Y) in which the electron element 12 is to be formed. In the flexible film formation step, the flexible film 11 is formed in a wider range than the region in which the adhesive layer 14 is formed.

Description

  The present invention relates to a method for manufacturing a flexible device.

Recently, the demand for displays having excellent impact resistance and flexibility is increasing. Then, it replaces with the present glass substrate which comprises a display, and using a flexible film is examined.
However, when an electronic element is formed on a flexible film, the flexible film as a base material is required to have flatness, but it is difficult to ensure the flatness of the flexible film due to bending or warping. Therefore, when forming an electronic element on a flexible film, the method of ensuring the flatness of a flexible film is fixed by fixing a flexible film on a support substrate (for example, patent documents 1-3). ).

  Patent Document 1 discloses a technique in which an adhesive is formed over the entire surface of a support substrate, and then a flexible film is formed on the support substrate on which the adhesive is formed. And when formation of an electronic element is completed with respect to the electronic element formation area in a flexible film, a laser beam is irradiated to the whole contact bonding layer from the opposite side to the surface in which the adhesive agent was formed in a support substrate. Thereby, since the adhesiveness between a support substrate and a flexible film falls rather than before laser beam irradiation, a support substrate and a flexible film are isolate | separated.

JP 2011-48734 A JP 2003-163338 A Japanese Patent Laid-Open No. 10-125931

However, in the method disclosed in Patent Document 1, in the step of separating the support substrate and the flexible film, not only the adhesive layer but also the electronic elements formed on the flexible film are irradiated with laser light. become. For this reason, an electronic element may be damaged by a laser beam.
The present invention has been made in view of the above problems, and provides a method for manufacturing a flexible device capable of suppressing damage to an electronic element due to laser light irradiation in a step of separating a support substrate and a flexible film. For the purpose.

  The manufacturing method of the flexible device which is one aspect of the present invention includes an adhesive layer forming step of forming an adhesive layer on a support substrate, and a flexible film forming step of forming a flexible film on the support substrate on which the adhesive layer is formed. , Forming an electronic element on the flexible film, irradiating the adhesive layer with laser light, and lowering the adhesion between the support substrate and the flexible film than before laser light irradiation. Separating the support substrate and the flexible film, wherein in the adhesive layer forming step, the adhesive layer is on the support substrate corresponding to a region where the electronic element is scheduled to be formed. In the flexible film forming step, the flexible film is formed in the peripheral region outside the region. It is broadly formed than the layer formed region.

  According to one embodiment of the present invention, it is possible to provide a method for manufacturing a flexible device capable of suppressing damage to an electronic element due to laser light irradiation in the step of separating the support substrate and the flexible film.

2 is a schematic cross-sectional view showing a structure of a flexible device 10. FIG. It is a schematic diagram which shows the manufacturing method of the flexible device which concerns on embodiment. It is a schematic diagram which shows the manufacturing method of the flexible device which concerns on embodiment. It is a schematic diagram which shows the electronic element formation process and isolation | separation process in the case of forming a some electronic element.

<< Outline of One Embodiment of the Present Invention >>
The manufacturing method of the flexible device which concerns on 1 aspect of this invention WHEREIN: The adhesive layer formation process which forms an adhesive layer on a support substrate, The flexible film formation process which forms a flexible film on the support substrate in which the said adhesive layer was formed, , Forming an electronic element on the flexible film, irradiating the adhesive layer with laser light, and lowering the adhesion between the support substrate and the flexible film than before laser light irradiation. Separating the support substrate and the flexible film, wherein in the adhesive layer forming step, the adhesive layer is on the support substrate corresponding to a region where the electronic element is scheduled to be formed. In the flexible film forming step, the flexible film is formed in the peripheral region outside the region. It is broadly formed than the layer formed region.

  In the method for manufacturing a flexible device according to one aspect of the present invention, in the adhesive layer forming step, the region on the support substrate, the region outside the region on the support substrate corresponding to the region where the formation of the electronic element in the flexible film is scheduled An adhesive layer is formed in the peripheral region of the. And in a flexible film formation process, a flexible film is formed more extensively than the area | region in which the contact bonding layer was formed. That is, in one embodiment of the present invention, the adhesive layer is formed so as to avoid a region where an electronic element is scheduled to be formed. By doing in this way, it can avoid irradiating a laser beam with respect to an electronic element in a isolation | separation process.

Therefore, in the step of separating the support substrate and the flexible film, it is possible to provide a method for manufacturing a flexible device that can suppress damage to the electronic element due to laser light irradiation.
Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, in the said flexible film formation process, the said flexible film is formed with the apply | coating method.

Moreover, in the specific aspect of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, in the said isolation | separation process, the interface vicinity of the said contact bonding layer and the said support substrate, or the interface of the said contact bonding layer and the said flexible film When the peeling occurs in the vicinity, the support substrate and the flexible film are separated.
Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, the said contact bonding layer consists of material which can be removed from the said support substrate by an etching or washing | cleaning.

Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, the said contact bonding layer consists of a metal or a metal oxide.
In the specific aspect of the method for manufacturing a flexible device according to one embodiment of the present invention, the metal is any one of tungsten, molybdenum, silver, and aluminum.
In the specific aspect of the method for manufacturing a flexible device according to one embodiment of the present invention, the metal oxide is any one of tungsten oxide, molybdenum oxide, silver oxide, aluminum oxide, indium tin oxide, and indium zinc oxide. .

Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, the removal process of removing the contact bonding layer which remained on the said support substrate is further included after the said isolation | separation process completion | finish.
Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, the film thickness of the said contact bonding layer is 10-200 nm.
Further, in a specific aspect of the method for manufacturing a flexible device according to one aspect of the present invention, before the flexible film forming step, a region excluding a region where the formation of the adhesive layer on the support substrate is scheduled, Or it includes a release layer forming step of forming a release layer in a region excluding the region where the adhesive layer is formed, and the release layer has a release strength when it is assumed that the flexible film is released from the release layer. The material is made of a material that is smaller than the peel strength when it is assumed that the flexible film is peeled from the support substrate.

Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, the said peeling layer contains polyalkylsiloxane or the alkylsilane alkoxide polymer.
Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, the said electronic element contains at least one of an organic TFT and an organic EL element.
Moreover, in the specific situation of the manufacturing method of the flexible device which concerns on 1 aspect of this invention, the said flexible device is an organic EL display panel by which multiple organic EL elements are arranged.

≪Aspect of implementation≫
[Flexible device]
FIG. 1 is a schematic cross-sectional view showing the structure of the flexible device 10.
The flexible device 10 includes a flexible film 11 and an electronic element 12 formed on the flexible film 11.

  The flexible film 11 is a film made of a flexible material. Materials that can be used for the flexible film 11 include, for example, copolymers containing polyimide as a unit structure in addition to polyimide, polyimide benzoxazole, polyimide benzimidazole, polyester, polytetrafluoroethylene, polyphenylene sulfide, polyamide, polyamide Polyimide such as imide, polycarbonate, polystyrene, polypropylene, polyethylene, polyvinyl chloride, polyethersulfone, polyethylene naphthalene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer, cyclic polyolefin, modified polyolefin, polyvinyl chloride, poly Vinylidene chloride, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer, butadiene-styrene copolymer, ethylene -Vinyl alcohol copolymer, polyether, polyether ketone, polyether ether ketone, polyether imide, polyacetal, polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester, polytetrafluoroethylene, polyvinylidene fluoride, etc. It is done. Moreover, the multilayer structure which combined 1 type (s) or 2 or more types among these materials may be sufficient.

  The gap 11 a in the flexible film 11 is formed by separating the flexible film 11 from the support substrate in the manufacturing process of the flexible device 10. The thickness of the flexible film 11 in the Z-axis direction in the region where the gap 11a does not exist is approximately 5 to 40 [μm], whereas the thickness of the gap 11a in the Z-axis direction is approximately 10 to 200 [nm] (adhesion described later) Corresponds to the thickness of the layer.) And very thin. Therefore, even if the gap 11a exists, there is no problem in using the device.

  The electronic element 12 includes, for example, an organic EL element and an organic TFT (organic thin film transistor) that is a driving element that drives the organic EL element. An organic EL element is a light-emitting element utilizing the electroluminescence phenomenon of a solid fluorescent substance, and research and development have been advanced in recent years. In addition, the organic EL element emits light by itself and thus has high visibility. Further, since it is a complete solid element, it has excellent impact resistance. Furthermore, by arranging a plurality of organic EL elements in the electronic element 12, the flexible device 10 can be a flexible organic EL display panel.

[Flexible device manufacturing method]
2 and 3 are schematic views showing a method for manufacturing a flexible device according to an embodiment. 2 (a1), (b1), and (c1) are perspective views showing a method for manufacturing a flexible device, respectively. 2 (a2), (b2), and (c2) are cross-sectional views (ZX cross-sectional views) taken along line AA ′ in FIGS. 2 (a1), (b1), and (c1), respectively. The same applies to FIG.

  The manufacturing method of the flexible device according to the present embodiment includes an adhesive layer forming step of forming the adhesive layer 14 on the support substrate 13 and a flexible film of forming the flexible film 11 on the support substrate 13 on which the adhesive layer 14 is formed. The forming step, the electronic element forming step of forming the electronic element 12 on the flexible film 11, and the adhesive layer 14 are irradiated with laser light, and the adhesion between the support substrate 13 and the flexible film 11 is improved from before the laser light irradiation. And a separation step of separating the support substrate 13 and the flexible film 11 from each other.

<Adhesive layer forming step>
First, as shown in FIGS. 2A1 and 2A2, a support substrate 13 is prepared. Since the support substrate 13 is used for the purpose of ensuring the flatness of the flexible film in the electronic element forming step, it is desirable that the support substrate 13 be formed of a material having high flatness and being difficult to deform. Examples of such materials include alkali-free glass, soda glass, non-fluorescent glass, phosphate glass, borate glass, quartz, sapphire, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, Insulating materials such as polyester, silicone resin, and alumina can be used.

Next, the adhesive layer 14 is formed on the support substrate 13. Specifically, the adhesive layer 14 is formed in an annular shape in the peripheral region (X) on the support substrate 13 so as to surround the electronic element formation region (Y). The electronic element formation region (Y) corresponds to a region where the formation of the electronic element is scheduled. Here, the adhesive layer 14 is formed in a frame shape along the periphery of the support substrate 13.
The adhesive layer 14 is used for the purpose of fixing the support substrate 13 and the flexible film formed thereon. Therefore, the material constituting the adhesive layer 14 is selected to have high adhesion with the flexible film. Furthermore, the adhesive layer 14 needs to be able to withstand various manufacturing processes in the subsequent flexible film forming step, electronic element forming step, and separation step. Therefore, the adhesive layer 14 is preferably a pressure-sensitive adhesive having excellent heat resistance and chemical resistance. Here, when said material is used as a flexible film, the temperature of the heating contained in a flexible film formation process is about 300-400 [degreeC]. Therefore, the heat-resistant temperature of the material constituting the adhesive layer 14 is desirably equal to or higher than this temperature.

  Furthermore, in the separation step in the present embodiment, the adhesion between the support substrate 13 and the flexible film 11 is reduced by irradiating the adhesive layer 14 with laser light. Therefore, the adhesive layer 14 needs to be made of a material that transmits or absorbs laser light and converts it into heat or changes its quality. Examples of such materials include metals such as tungsten, molybdenum, silver and aluminum, and metal oxides such as tungsten oxide, molybdenum oxide, silver oxide, aluminum oxide, indium tin oxide (ITO) and indium zinc oxide (IZO). Etc.

The film thickness of the adhesive layer 14 is preferably 10 to 200 [nm]. When the film thickness is less than 10 [nm], high adhesion may not be obtained between the adhesive layer 14 and the flexible film. On the other hand, the reason why the upper limit of the film thickness is set to 200 [nm] is in view of manufacturing efficiency.
As a method for forming the adhesive layer 14, for example, a method of forming the metal material or the like by vapor deposition or sputtering using a mask in which an opening is provided in a portion corresponding to the peripheral region (X) on the support substrate 13. There is a method in which a film made of the above metal material or the like is formed over the entire support substrate 13 by vapor deposition or sputtering, and a film corresponding to the electronic element formation region (Y) is removed by etching or cleaning.

  In the adhesive layer forming step in this embodiment, the adhesive layer is not formed over the entire support substrate 13 but is formed on a part of the support substrate 13. Therefore, when the adhesive layer 14 is formed using a mask, the amount of necessary adhesive layer material can be reduced as compared with the case where the adhesive layer is formed over the entire support substrate 13. As a result, manufacturing costs are reduced. In particular, when a large flexible device such as a large screen organic EL display panel is formed, significant cost reduction can be expected.

<Flexible film formation process>
Next, as shown in FIGS. 2B1 and 2B2, the flexible film 11 is formed on the support substrate 13 on which the adhesive layer 14 is formed in a wider area than the region on which the adhesive layer 14 is formed. Here, “broader than the region where the adhesive layer 14 is formed” means wider than the inner periphery of the adhesive layer 14. For example, as in the present embodiment, when the adhesive layer 14 has an annular shape, the flexible film 11 is formed in a wider area than the inner periphery of the ring of the adhesive layer 14.

When the above-described materials are used as the material for the adhesive layer 14 and the flexible film 11, it is considered that interaction occurs between these layers. Examples of the “interaction” here include van der Waals forces, covalent bonds, hydrogen bonds, and intermolecular forces such as dipole interactions.
As a manufacturing method of the flexible film 11, it is desirable to form the flexible film 11 by applying the material constituting the flexible film on the support substrate 13 based on the application method. Examples of the coating method include an inkjet method, a spin coating method, a gravure printing method, a dispenser method, a nozzle coating method, intaglio printing, and relief printing.

  As a method for forming the flexible film, in addition to the coating process, for example, a method of sticking a plate-like flexible film on a support substrate on which an adhesive layer is formed may be considered. However, when such a method is adopted, there arises a problem that the flatness of the flexible film is impaired when the flexible film swells at the portion where the adhesive layer is formed. On the other hand, by forming the flexible film 11 by a coating method, the upper surface of the flexible film 11 is flattened without being affected by the step due to the adhesive layer 14 being formed, as shown in FIG. Can be finished. In addition, according to the coating method, the flexible film 11 can be formed along the steps of the adhesive layer 14, so that the adhesion between the adhesive layer 14 and the flexible film 11 can be further increased.

<Electronic element formation process>
Subsequently, as shown in FIGS. 2C1 and 2C2, the electronic element 12 is formed in the electronic element formation region (Y) on the flexible film 11. The electronic element forming process in the present embodiment includes an organic TFT forming process and an organic EL element forming process.
(Organic TFT formation process)
The organic TFT forming step includes a gate electrode forming step, a gate insulating layer forming step, a source and drain electrode forming step, and a semiconductor layer forming step.

The gate electrode is formed by depositing a metal material by vacuum deposition or sputtering, and selectively removing the metal material film by etching or the like. Examples of the metal material used for the gate electrode include silver, aluminum, an alloy of silver, palladium, and copper, an alloy of silver, rubidium, and gold.
The gate insulating layer is obtained, for example, by forming a known gate insulator material such as silicon oxide by sputtering. Note that any of an organic polymer material and an inorganic material can be used as a known gate insulator material.

The source electrode and the drain electrode are formed by forming a metal material by vacuum evaporation or sputtering as in the case of the gate electrode and selectively removing the metal material film by etching or the like. Examples of the metal material used for the source electrode and the drain electrode include gold, silver, copper, an alloy of silver, palladium, and copper, tungsten, and molybdenum.
The semiconductor layer is obtained by depositing an ink containing an organic semiconductor material and a solvent by a known coating method such as an inkjet method or a spin coating method. Examples of organic semiconductor materials include coating-type low-molecular material oligomers such as acene derivatives, porphyrins, and phthalocyanine derivatives, and polymer materials such as thiophene and fluorene.

(Organic EL element formation process)
The organic EL element forming step includes an anode forming step, an organic light emitting layer forming step, and a cathode forming step.
The anode is formed by depositing a metal material by vacuum deposition or sputtering, and selectively removing the metal material film by etching or the like. As the metal material used for the anode, for example, the metal materials mentioned above for the metal material used for the gate electrode can be used.

  The organic light emitting layer is obtained by depositing an ink containing an organic material constituting the organic light emitting layer and a solvent on the anode by vacuum deposition or an ink jet method. As the organic material constituting the organic light emitting layer, for example, known materials described in JP-A-5-163488 such as an oxinoid compound, a perylene compound, a coumarin compound, and an azacoumarin compound can be used.

The cathode is obtained by forming a transparent conductive material on the organic light emitting layer by sputtering. Examples of the transparent conductive material used for the cathode include ITO and IZO.
The organic EL element may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like as necessary.
<Separation process>
3 (a1), (a2), (b1), and (b2) show the separation process.

  First, as shown in FIGS. 3 (a1) and (a2), the adhesive layer 14 formed in the peripheral region (X) is irradiated with a laser beam 15 from the back side. Since the vicinity of the adhesive interface of the flexible film 11 is altered by the laser light 15 transmitted through the support substrate 13 and the adhesive layer 14, the adhesion between the support substrate 13 and the flexible film 11 is lower than that before the laser light 15 irradiation. Alternatively, when the adhesive layer 14 can absorb the laser light 15 and convert its energy into heat, the temperature in the vicinity of the adhesive interface of the flexible film 11 rises and changes in quality, thereby reducing the adhesion. Alternatively, the adhesive layer 14 is deteriorated to absorb the laser light 15, whereby the adhesiveness is lowered. As a result, as shown in FIGS. 3B1 and 3B2, the support substrate 13 and the flexible film 11 are separated. At this time, in the flexible film 11, a gap 11a is formed in a region corresponding to the portion where the adhesive layer 14 was present.

  Here, the alteration of the flexible film 11 or the adhesive layer 14 by absorbing the laser beam 15 refers to ablation of the material constituting the so-called flexible film 11 or the adhesive layer 14. Ablation means that a material that absorbs irradiated light is photochemically or thermally excited, and its surface or internal atoms or molecules are disconnected and released, and mainly the flexible film 11 or the adhesive layer 14. All or part of the constituent materials of the material appear as a phenomenon that causes phase change such as melting and transpiration (vaporization). Moreover, the constituent material of the flexible film 11 or the adhesive layer 14 may be in a fine foamed state due to the phase change, and the bonding force may be reduced.

Examples of the laser beam 15 include a solid laser represented by a YAG laser, a gas laser represented by an excimer laser, a liquid laser represented by a dye laser, a semiconductor laser (laser diode), a free electron laser, a chemical laser, and a metal. A vapor laser etc. are mentioned.
FIGS. 3B1 and 3B2 illustrate a case where the support substrate 13 and the flexible film 11 are separated due to separation near the interface between the adhesive layer 14 and the flexible film 11. . In addition to the vicinity of the interface between the adhesive layer 14 and the flexible film 11, peeling occurs in the vicinity of the interface between the adhesive layer 14 and the support substrate 13 or in the vicinity of the central portion of the adhesive layer 14 in the Z-axis direction. The film 11 may be separated.

  Here, “peeling occurs in the vicinity of the interface between the adhesive layer 14 and the flexible film 11” means that when peeling occurs at the interface between the adhesive layer 14 and the flexible film 11, and in the adhesive layer 14, the adhesive layer The case where peeling arises by the flexible film 11 side rather than the center part in the Z-axis direction of 14 is included. Similarly, “peeling occurs in the vicinity of the interface between the adhesive layer 14 and the support substrate 13” means that peeling occurs at the interface between the adhesive layer 14 and the support substrate 13, and in the adhesive layer 14. The case where peeling occurs on the support substrate 13 side than the central portion in the Z-axis direction of 14 is included.

In this embodiment, in the adhesive layer forming step, the adhesive layer 14 is formed in the peripheral region (X) so as to surround the electronic element forming region (Y). By doing in this way, it can avoid irradiating the laser beam 15 with respect to the electronic element 12 in a isolation | separation process. Therefore, it is possible to suppress damage to the electronic element 12 due to the laser beam 15 irradiation.
As described above, the flexible device 10 is completed through the adhesive layer formation step to the separation step (FIGS. 3C1 and 3C2).

<Others>
(Removal process)
After the separation step, a removal step for removing the adhesive layer 14 remaining on the support substrate 13 may be further included. By performing the removing step, the support substrate 13 that has undergone the adhesive layer forming step to the separating step can be returned to the state before the adhesive layer 14 is formed. Therefore, since the support substrate 13 can be reused, the manufacturing cost is reduced.

When performing the removal process, it is desirable that the adhesive layer 14 be formed of a material that can be easily peeled off by etching or cleaning. When the above-described metal material is used as the adhesive layer 14, there is an advantage that it can be removed relatively easily by etching or cleaning.
(Peeling layer forming process)
Before the flexible film forming step, a release layer that further forms a release layer in a region excluding the region where the adhesive layer 14 is scheduled to be formed on the support substrate 13 or a region excluding the region where the adhesive layer 14 is formed. It is good also as including a formation process. The release layer has a function of facilitating separation of the support substrate 13 and the flexible film 11 in the separation step. That is, the release layer is a material whose peel strength when it is assumed that the flexible film 11 is peeled from the release layer is smaller than the peel strength when it is assumed that the flexible film 11 is peeled from the support substrate 13. It consists of Examples of such materials include polyalkylsiloxanes and alkylsilane alkoxide polymers.

These materials have low surface energy due to the presence of surface alkyl functional groups. Therefore, the interaction at the interface between these materials and the flexible film 11 is smaller than the interaction between the support substrate 13 and the flexible film 11. As a result, the support substrate 13 and the flexible film 11 can be easily separated.
By forming the release layer, the electronic element 12 can be prevented from being damaged when the flexible film 11 is separated from the support substrate 13 in the separation step.

  The release layer forming step can be performed before the adhesive layer forming step or between the adhesive layer forming step and the flexible film forming step. When it is performed before the adhesive layer forming step, “adhesive layer” is performed when it is performed between the adhesive layer forming step and the flexible film forming step in the “region excluding the region where the adhesive layer 14 is scheduled to be formed on the support substrate 13”. The release layer is formed in the “region excluding the region where 14 is formed”.

[Modifications / Others]
Although the embodiment has been described above, the present invention is not limited to the above embodiment. For example, the following modifications can be considered.
(1) In the above embodiment, the adhesive layer is provided on the outermost edge of the support substrate, but the present invention is not limited to this. The adhesive layer may be a peripheral region on the support substrate and may be formed in a peripheral region outside the region on the support substrate corresponding to the region where the electronic element is scheduled to be formed. For example, a case where an annular adhesive layer is formed on a rectangular support substrate is also included. That is, the “peripheral region on the support substrate” refers to a region excluding the central region where the electronic element is formed in a plan view of the support substrate.

(2) In the above embodiment, the adhesive layer is formed in a rectangular ring shape (frame shape) along the shape of the support substrate, but the present invention is not limited to this. Other than these, for example, there are an annular shape, a triangular frame shape, a polygonal frame shape, and the like.
(3) In the above embodiment, the adhesive layer is formed so as to completely surround the region on the support substrate corresponding to the region where the electronic element is scheduled to be formed. It is not limited to. It is good also as forming a contact bonding layer discontinuously like a broken line shape or a dashed-dotted line shape to such an extent that adhesiveness of a support substrate and a flexible film is not impaired.

In addition, for example, when the shape of the support substrate is rectangular as in the above embodiment, the adhesive layer does not necessarily have to be formed on four sides, and the adhesive layer is formed only on two opposite sides. It is good as well. Furthermore, when the shape of the support substrate is circular, for example, the adhesive layer may be formed in a semicircular arc shape or an arc shape.
In addition, the reason for showing the example in which the adhesive layer is continuously formed in the outermost edge region of the support substrate in the embodiment is that the outermost edge region in the support substrate is the support substrate and the flexible film in the electronic element forming step. This is because it is difficult to maintain the bonding. That is, in the interface between the support substrate and the flexible film, the interface between the outermost edge region of the support substrate and the flexible film bonded thereto is most likely to come off.

  (4) Generally, when a metal material or the like is used as a material constituting the adhesive layer as in the embodiment as compared with the case where a resin adhesive is used as the adhesive layer, the film thickness of the adhesive layer Can be made thinner. Therefore, even if a plate-like flexible film is attached to the support substrate, the influence on the flatness of the flexible film due to the rising of the flexible film at the portion where the adhesive layer is formed is small.

  (5) In the above embodiment, the electronic element formation step includes the organic EL element formation step and the organic TFT formation step, but the present invention is not limited to this. For example, any of these forming steps may be missing, or another step may be included. In the above embodiment, the organic TFT and the organic EL element have been described as examples of the electronic element, but the present invention is not limited to this. Examples of elements other than these include oxide TFTs, amorphous silicon TFTs, and polysilicon TFTs.

  (6) The method for manufacturing an organic EL element described in the above embodiment is merely an example, and a step of forming other components may be included. In the above embodiment, the method for producing an organic EL element in which light is extracted from the cathode side has been described as an example. However, the present invention is not limited to this. Other methods include, for example, a method of extracting light from the anode side, a method of extracting light from both the anode side and the cathode side, and the like.

  (7) “Adhesive layer is composed of A” in this specification includes not only a case where the adhesive layer contains only A but also a small amount of impurities that can be mixed at a normal level in the manufacturing process. It is also included. For example, “the adhesive layer is made of metal or metal oxide” includes not only the case where the adhesive layer contains only metal or metal oxide, but also the case where a trace amount of impurities is mixed.

(8) In the case where a plurality of electronic elements are formed on a single flexible film, an adhesive layer is formed outside the area on the support substrate corresponding to the area where the formation of the electronic element group composed of the plurality of electronic elements is scheduled. Should just be formed. This will be described with reference to FIG.
FIG. 4 is a schematic diagram showing an electronic element formation process and a separation process in the case of forming a plurality of electronic elements. 4A1 and 4A2 show an electronic element forming process, and FIGS. 4B1 and 4B2 show a separation process. 4 (c1) and (c2) show a cutting process for cutting the flexible film 11 on which a plurality of electronic elements are formed. 4 (a1), (b1), and (c1) are perspective views, and FIGS. 4 (a2), (b2), and (c2) are FIGS. 4 (a1), (b1), and (c1), respectively. FIG. 6 is a cross-sectional view (ZX cross-sectional view) taken along line BB ′ in FIG.

  As shown in FIGS. 4 (a1) and 4 (a2), an adhesive layer is formed on the peripheral region outside the region on the support substrate 13 corresponding to the region (Z) where the formation of the electronic device group composed of the plurality of electronic devices 12A is scheduled. 14 is formed. And the flexible film 11 is formed more extensively than the area | region in which the contact bonding layer 14 was formed. In the electronic element formation step, a plurality of electronic elements 12A are formed in a region corresponding to the inside of the region where the adhesive layer 14 is formed on the flexible film 11.

In the separation step shown in FIGS. 4B1 and 4B2, the support substrate 13 and the flexible film 11 are separated by irradiating the adhesive layer 14 with laser light from the back side.
In the separation step shown in FIGS. 4C1 and 4C2, the flexible film 11 is cut in a region corresponding to the inside of the region where the adhesive layer 14 is formed and outside the region where the electronic element 12A is formed. Cut at 16. In the example shown in FIG. 4, the flexible film 11 is cut into a lattice shape. As the cutter 16, for example, a laser cutter, a metal blade or the like can be used.

  As described above, when a plurality of electronic elements are formed, it is not necessary to form an adhesive layer in a lattice shape along the cutting position in the cutting process, and the outermost periphery of the region where the electronic element group is formed It suffices if it is formed only in the region corresponding to. In FIG. 4, four electronic elements 12 </ b> A are formed on the flexible film 11, but this is merely an example, and the number to be formed can be changed as appropriate.

  (9) The materials, numerical values, and the like used in the above-described embodiment only exemplify preferred examples, and are not limited to this aspect. In addition, changes can be made as appropriate without departing from the scope of the technical idea of the present invention. Furthermore, the scale of the members in each drawing is different from the actual one. Note that the symbol “˜” used to indicate a numerical range includes numerical values at both ends.

  The method for manufacturing a flexible device of the present invention can be suitably used for, for example, a method for manufacturing a flexible device that constitutes a display or the like mounted on a portable information terminal.

DESCRIPTION OF SYMBOLS 10 Flexible device 11 Flexible film 12 Electronic element 13 Support substrate 14 Adhesive layer 15 Laser light 16 Cutter

Claims (13)

An adhesive layer forming step of forming an adhesive layer on the support substrate;
A flexible film forming step of forming a flexible film on the support substrate on which the adhesive layer is formed;
An electronic element forming step of forming an electronic element on the flexible film;
A separation step of separating the support substrate and the flexible film by irradiating the adhesive layer with laser light, and lowering the adhesion between the support substrate and the flexible film than before laser light irradiation, Including
In the adhesive layer forming step, the adhesive layer is formed in a peripheral region outside the region on the support substrate corresponding to a region where the electronic element is scheduled to be formed,
In the flexible film forming step, the flexible film is formed more extensively than the region where the adhesive layer is formed.
A manufacturing method of a flexible device. In the flexible film forming step,
The flexible film is formed by a coating method,
The manufacturing method of the flexible device of Claim 1. In the separation step, the support substrate and the flexible film are separated by peeling near the interface between the adhesive layer and the support substrate or near the interface between the adhesive layer and the flexible film. ,
The manufacturing method of the flexible device of Claim 1. The adhesive layer is made of a material that can be removed from the support substrate by etching or cleaning.
The manufacturing method of the flexible device of Claim 1. The adhesive layer is made of metal or metal oxide.
The manufacturing method of the flexible device of Claim 4. The metal is any of tungsten, molybdenum, silver and aluminum.
The manufacturing method of the flexible device of Claim 5. The metal oxide is any one of tungsten oxide, molybdenum oxide, silver oxide, aluminum oxide, indium tin oxide, and indium zinc oxide.
The manufacturing method of the flexible device of Claim 5. After the separation step, the method further includes a removal step of removing the adhesive layer remaining on the support substrate.
The manufacturing method of the flexible device of Claim 4. The adhesive layer has a thickness of 10 to 200 nm.
The manufacturing method of the flexible device of Claim 1. Before the flexible film forming step,
A release layer forming step of forming a release layer in a region excluding the region where the adhesive layer is scheduled to be formed on the support substrate, or in a region excluding the region where the adhesive layer is formed;
The release layer is a material whose peel strength when assuming that the flexible film is peeled off from the release layer is smaller than the peel strength when assuming that the flexible film is peeled off from the support substrate. Consists of
The manufacturing method of the flexible device of Claim 1. The release layer includes a polyalkylsiloxane or an alkylsilane alkoxide polymer.
The manufacturing method of the flexible device of Claim 10. The electronic element includes at least one of an organic TFT and an organic EL element.
The manufacturing method of the flexible device of Claim 1. The flexible device is an organic EL display panel in which a plurality of organic EL elements are arranged.
The manufacturing method of the flexible device of Claim 12.

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