JP2013067124A - Transfer apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To control a resist film thickness and a thin thickness of a material to be transferred in a transfer apparatus more precisely than ever before.SOLUTION: A fine hole is opened on such a part that production is not affected to the extent possible within a plane where a die such as a silicon wafer and a material to be transferred or a resist film are in contact. A sensor more precise than ever before for measuring a thickness of only the material to be transferred through the fine hole is mounted. Thus, the size of only the material to be transferred can be measured, and a change in dimension during the transfer is multiplied by a simple correction value with linearity, thereby allowing film thickness control more precise than ever before.

Description

  The present invention relates to a transfer device for transferring to a transfer target.

  In recent years, semiconductor integrated circuits and tenting technologies have been miniaturized and integrated, and as a pattern transfer technology for realizing fine processing and electronic circuit formation, high precision of photolithography apparatuses and patterning Development of high-precision thin film forming technology for circuit forming films has been underway.

  However, as the processing method approaches the wavelength of the light source for light exposure, the lithography technology is approaching its limit, and in order to promote further miniaturization and higher precision, the formation of fine patterns at low cost instead of lithography technology, In addition, as a technique for performing at a high throughput, a mold having the same pattern as the pattern to be formed on the transferred body is embossed on the resist film layer formed on the surface of the transferred substrate or the transferred body itself. An imprint technique has been developed in which a predetermined pattern is transferred to a transfer medium by heating, pressurizing, and cooling.

  In the imprint technique, a laminate technique or the like has been developed as a technique for controlling the film thickness of a transfer object during molding or as a thin film formation technique for forming a resist film or the like. By thinning the transfer target and the resist film, the merit of further miniaturization, miniaturization, and cost reduction can be improved.

  Here, as a technique for controlling the film thickness, as described in Patent Document 1, a sensor is attached to the surface of the transferred object holding mechanism and the mold holding mechanism, and the transferred object and the mold are in close contact with each other. There is a method of controlling the thickness by measuring the gap between the transfer object holding mechanism and the mold holding mechanism and controlling the position from the measurement result.

  In addition, as described in Patent Document 2, a method of spin-coating a resist divided into a plurality of times, as in Patent Document 3, a method of using a plurality of resists and applying by spin-coating, and a resist agent as an object. There are a method of uniformly spreading with a spatula nail after being applied to, and a method of pressing with a rigid plate.

  Further, Patent Document 4 includes a method of controlling a film thickness by controlling a load and a roller position when a film material is pressure-bonded by a roller.

JP2008-132711 JP2011-23387 JP-A-6-97068 JP 5-61200

  In the film thickness control method disclosed in Patent Document 1, a sensor is installed in the holding mechanism unit in consideration of the amount of mechanical deflection such as servo motors and ball screws, and the thermal effects of the transfer stage and holding mechanism. This is a method of controlling the film thickness by measuring the gap between the mechanism portions.

  However, it takes into account the expansion of the mold itself due to heat, the expansion of the material, the deflection of the stage due to the load, (eg, when the wafer φ150 alone is pressed at 4 MPa, it bends several μm at a position 10 mm away from the wafer edge) However, it is difficult to control the film thickness on the micron order.

  Here, even if correction values are entered, there are changes in the position of the wafer and variations in the thickness of the mold and the transferred object itself (reference: wafer φ150 thickness t675 μm ± 20 μm). Since the film thickness must be measured and managed in advance, it is difficult to control the film thickness simply by applying correction to the value measured by the sensor between the holding mechanisms.

  Further, the transfer object is mainly a resin material and has a higher elastic force than a metal. When the transfer is performed, the film thickness of the transfer object is remarkably changed, and plastic deformation and elastic deformation occur at the same time, so that it is difficult to control with the correction value. In order to reduce the deflection due to the load, the strength of the stage, ball screw, etc. is increased in order to reduce the load to be transferred and the mold as small as possible and to increase the rigidity of the device itself. However, the transfer area is limited and the apparatus becomes larger.

  However, in the case of using a photo-curing resin, a high load is generally not required, so there is a case where it is not necessary to consider the influence of stage warping.

  In Patent Document 2 and Patent Document 3, spin coating technology is used to form a resist film for forming a pattern circuit. However, tenting defects are likely to occur when the wiring pattern is deep and the space between patterns is narrow. Become.

  In Patent Document 4, a laminating technique in which the rolls are bonded together is used, and if conditions for the pressing force and the gap dimension of the rolls can be determined, there is a sudden change in the width dimension of the plate or sheet. It is effective for those that do not.

  However, since the roll pressure is applied in a straight line, if the dimension in the width direction of the transfer target is circular, the transfer conditions change and the film thickness does not become constant. Therefore, it is not suitable for tenting on a wafer.

  The object of the present invention is, for example, that a fine structure can be transferred, and more accurate control than conventional thin film forming of a transfer object is possible, and thin film thickness with higher accuracy than conventional resist film forming on a wafer is possible. It is to provide a small and inexpensive transfer technology that can be controlled.

  A means for measuring the film thickness of the transferred object is provided within the range where the transferred object that is the mold or the substrate and the transferred object or the resist film are in contact with each other, and the pressure condition is determined according to the measured value. By controlling this, the film thickness after transfer can be controlled with higher accuracy than in the past.

  The above configuration will be described below in another expression.

A fixed part that supports the transfer target, a support part that supports a transfer object having a shape to be transferred, and the support part are provided so as to be movable in a moving direction that approaches or moves away from the fixed part. A drive unit, a mechanism unit that heats and cools at least the transfer product, and a pressurization mechanism unit that pressurizes the transfer target and the transfer product in contact with each other,
In the range of the surface where the transferred object and the transferred product are in contact, based on the measurement mechanism unit for measuring the distance between the transferred object and the transferred product, and the distance measured by the measuring mechanism unit, The transfer device is configured to include a pressure control mechanism that controls the pressure mechanism, and a base that supports at least the fixing unit and the driving unit.

  According to the present invention, in a fine structure transfer apparatus or an apparatus conforming thereto, it is possible to form a thin film with a higher precision than before, and to control a thin film formation with a higher precision than the conventional resist film thickness. The technology that enables it can be provided.

1 is a front view showing a schematic configuration of a fine structure transfer device representing an embodiment of the present invention. FIG. 3 is a front view illustrating a schematic configuration in which a sensor is attached to the transferred object holding side according to the embodiment of the present invention. FIG. 3 is a top view illustrating a schematic configuration in which a sensor is attached to the transferred object holding side according to the embodiment of the present invention. The front view which shows schematic structure which attached the sensor to the metal mold | die holding | maintenance side of the Example of this invention. The top view which shows schematic structure which attached the sensor to the metal mold | die holding | maintenance side of the Example of this invention. 6 is a graph showing a relationship between a target value of a change amount of a transfer target and an actual change amount in transfer according to an embodiment of the present invention. Schematic showing the state which the metal mold | die of the Example of this invention and the to-be-transferred body contacted. Schematic showing the state which installed the metal mold | die and to-be-transferred body of the Example of this invention in multiple numbers.

  First, a fine structure transfer apparatus and a transfer method according to an embodiment of the present invention will be described. FIG. 1 is a front view showing a schematic configuration of a microstructure transfer apparatus representing an embodiment of the present invention.

  The vertical direction of FIG. 1 will be described below as the Z axis.

  In the transfer operation of this apparatus, a mold 7 having nanometer or micrometer-scale fine irregularities formed on the surface is brought into contact with the transfer body 6 to be heated, pressurized and cooled, and then the transfer body 6 is made of gold. It is a transfer of a thermal nanoimprint apparatus that forms a microstructure on the surface that the mold 7 is in contact with. In the tenting operation, the transfer target 6 is used as a resist material and pressed against a tenting object that is a mold 7. It is a device for bonding.

Here, in the present invention, the fine structure means a structure having a concavo-convex structure in the range of several μm to several nm. Further, the thin film is in the range of several nm to several hundred μm.
The apparatus includes a drive that can move on the base 3, a mold holding unit 1 (hereinafter referred to as the drive unit 1), a fixed unit that is fixed to the base 3, and a transfer object holding unit 2 (hereinafter referred to as a fixed unit 2). ), The driving unit 1 can hold the mold 7, and the fixing unit 2 can hold the transfer target 6. The drive unit 1 can be driven in the Z-axis direction by the rotation operation transmitted from the drive transmission unit 8 as the servo motor 9 rotates and the ball screw 11 rotates.

  The servo motor 9 is mounted with an encoder, which is a feature of the servo motor, or attached externally, and can store its own rotational position. At this time, the speed, position, torque, and the like of the rotation of the servo motor 9 are controlled by the control device 10. The predetermined position is set to 0, and the distance moved in the Z direction from the predetermined position is set in the Z direction of the drive unit 1. The display can be converted to a position.

  Here, although not shown in the figure, the driving unit 1 and the unit 2 are mounted with a mold 7 and a mechanism for heating and cooling the transfer target 6 or a UV irradiation device for photocuring. It is what. Further, the drive unit 1 is provided with a mechanism according to a base 3 and a linear bush, or a linear guide, a linear block, and the like. The drive unit 1 is smoothly guided and can move in the Z-axis direction.

  Further, a load cell is incorporated in the drive unit 1 and is a mechanism that can detect a load applied to the mold 7 and the transfer target 6. The drive unit 1 and the ball screw 11 are connected by a free joint, and the servo motor 9 and the drive transmission unit 8 are mechanically fastened such as a coupling, a chain, and a pulley.

  The servo motor 9 can perform various operations such as torque control, position control, and speed control by the control device 10, and can also perform feedback control from the pressure of the load cell.

Regarding heating and cooling, a temperature controller, a temperature detector, a thermistor, and the like are provided in the control device 10, and heating to cooling can be performed by appropriate PID control.
Various heating sources such as a cartridge heater, a planar heater, an induction heater, and a lamp heater can be used as the heat source. However, since a large amount of heat is required to thermally transfer the mold 7 and the transfer target 6, it is robust. A combination of a heater block and a cartridge heater is preferred.

For cooling, water or alcohol water is used as a cooling medium.
In circulating the cooling medium, it is preferable to install a cooling device such as a chiller to circulate the temperature-controlled cooling medium. In addition, after the cooling is completed, a draining operation is performed with an inert gas such as N2 or clean air in order to discharge the cooling medium for the next heating.

In the case where the transfer target 6 is a photocurable resin, a lamp for irradiating ultraviolet rays (UV) may be installed in addition to the heater and the cooling mechanism.
In addition, although not shown, a mechanism is provided for bringing the transfer atmosphere to a vacuum state, and the transfer can be performed in both a vacuum and an atmospheric state.

FIG. 2 is a schematic front view of a mounting portion of the fixed portion displacement sensor 5, and FIG. 3 is a top view thereof.
As shown in FIG. 2, the fixed portion 2 is provided with a fixed portion displacement sensor 5 that measures the distance from the fixed portion 2 to the surface of the mold 7 in the surface where the transfer target 6 and the mold 7 are in contact with each other. ing.

  Further, by providing a means for detecting that the transferred body 6 and the mold 7 are in contact, when the transferred body 6 and the mold 7 are in contact, the distance between the fixed portion 2 and the surface of the mold 7 is increased. By measuring, the film thickness of the transferred object 6 alone can be measured.

  At this time, as a means for measuring the distance, although it depends on the material of the transferred object 6, an optical sensor or the like can be measured through the transferred object 6.

  Further, a minute hole is formed in a part of the transferred body 6 so that the position of the fixed portion displacement sensor 5 and the minute hole formed in the transferred body 6 correspond to or match each other. Accordingly, a contact sensor, an ultrasonic sensor, a laser sensor, or the like can be used, and the distance between the mold 7 and the fixed portion 2 can be measured. Thus, it is possible to measure the thickness of the transferred body 6 alone without being influenced by the thickness of the mold 7 and without being affected by the deflection of the driving unit 1 and the fixing unit 2 due to the load.

FIG. 4 is a schematic front view of the mounting portion of the drive unit displacement sensor 4, and FIG. 5 is a top view thereof.
As shown in FIG. 4, the drive unit 1 is provided with a drive unit displacement sensor 4 for measuring the distance from the surface of the mold 7 to the fixed unit 2. When the hole position of the drive unit displacement sensor 5 corresponds to or coincides with the hole formed in the transferred body 6, the hole position of the driving unit displacement sensor 5 is matched with or matched with the hole position. The distance between the surface of the mold 7 and the fixed part 2 can be measured. However, in this case, the correction value is added to the position adjustment of the drive unit displacement sensor 4 or the film thickness forming control due to the thickness change of the mold 7.

  As described above, the distance between the surface of the mold 7 and the fixed portion 2 is measured by the drive unit displacement sensor 5 at the position of the hole in the transferred member 6, whereby the transferred member 6 and the transferred member 6 are The distance between the surface of the mold 7 and the fixed portion 2 can be measured within the range of the surface in contact with the mold 7 and the like.

  Furthermore, by measuring the distance between the two at the position of the hole, the effects of the above-described expansion of the mold itself due to heat, expansion of the material, and stage warping due to the load are reduced compared to the conventional case. Thus, for example, in the transfer process, the film thickness can be controlled on the submicron order.

  That is, since the distance between the two at the position of the hole is measured, deformation, displacement, etc. due to heat, load, etc. of the mold, the stage of the transfer device component, the fixed part, the drive part, etc. are included in the measurement result. It is possible to reduce the influence. Furthermore, it is the measurement at the part and part of the film thickness that will be the actual management and controlled thickness, or it is measured at or near the part where the actual transcript or transferred object is transferred. Therefore, measurement can be performed with higher accuracy.

  This is because, for example, if the part you want to measure truly, the part and the sensor, and the measurement part of the measuring instrument are separated from each other, the error due to the oblique angle is true for the distance that is separated. In some cases, it may be added to the measured value, and if these are the above-mentioned configuration, it can be improved.

  Furthermore, the said hole part is demonstrated.

  Initially, when measuring the distance between the surface of the mold 7 and the fixed portion 2, as a result of measuring with a sensor at a position about 10 mm away from the transferred body 6 instead of the position of the hole, A result of an error of tens of μm was obtained between the sensor measurement value during transfer and the actual measurement value of the thickness of the transfer object taken out from the apparatus after the transfer.

  Furthermore, when the thickness of the transferred object or the thickness of the mold is different by several microns, or the mounting position of the transferred object and the mold is shifted by several mm, the error of the above ten and several μm is added. An error occurs in the shape, and repeatability cannot be obtained.

  For this reason, it is difficult to obtain a linearity that shows the correlation between the error and the film thickness. For example, the film thickness is controlled with high accuracy using a correction value found from the linearity. It was difficult.

  From the above, the desired accuracy at the sensor mounting position is far from it, and repeated examinations, but it is difficult to reduce the error.

  In these trial-and-error attempts, there is an idea that “it can be improved by measuring as close as possible to the position to be transferred and the portion to be transferred in the transferred body 6”. The examination was repeated, and it was confirmed that the error was greatly improved if the measurement was performed at the above-mentioned position and site.

  As a result of these trials and errors, the inventors have arrived at the invention for providing the hole of the above-mentioned embodiment for the first time.

  Here, as the hole shape of the fine hole processing, various shapes such as a circle, an ellipse, and a polygon can be used. In addition, as shown in FIG. 7, two or more transferred objects 6 are arranged, a sensor is installed in a gap where the transferred objects 6 are arranged, and the distance between the transferred object 6 and the mold 7 can be measured. .

The size of the hole is assumed to be about 2 mm, for example.
However, it may be 1 mm to 10 mm. Alternatively, the measurement unit such as the drive unit displacement sensor 5 which is a measurement mechanism unit for measuring the distance between the transfer target 6 and the transfer object such as the mold 7 can be measured without interference. It ’s fine.

  That is, it suffices if the transfer material 6 and the mold 7 can be arranged in such an arrangement that the influence of bending due to the load of the driving unit 1 and the fixing unit 2 does not occur.

  Similar to the arrangement of two or more transferred members 6, it is possible to arrange a plurality of molds 7 and measure the distance from the gaps between the molds 7. A plurality of molds 7 are arranged, and the distance can be measured.

  At this time, by making the gap between the molds as small as possible, the influence of the bending due to the load of the drive unit 1 and the fixed unit 2 can be suppressed, and the distance measurement with higher accuracy than before can be performed. . Here, the mold has not only a circular shape but also an ellipse, a polygon, and the like, and the distance can be measured in a shape as shown in FIG.

  Here, for example, a step is provided in the mounting portion of the driving unit 1 and the fixing unit 2 so that the installation position of the mold 7 and the transfer target 6 is constant, and the position is determined by pressing, etc. The positioning is easy.

With respect to the displacement sensor mounting hole, the hole diameter is made as small as possible so as to be outside the effective transfer area of the mold 7, so that the yield can be improved.
As a sensor for measuring the film thickness of the transfer target 6, for example, an optical sensor can be raised as long as it is a non-contact type sensor. If possible, a sensor with high accuracy and a small sensor head and high resolution is possible. Is preferred. A contact type sensor is also mentioned. In addition to this, an ultrasonic method, a magnetic field method, and the like can be mentioned, but the sensor is not limited to the above as long as the distance between the fixed portion 2 and the mold 7 can be measured.

  In the transfer and control, the servomotor 9 is rotated, and the ball screw 11 is moved in the Z-axis direction from the drive transmission unit 8, so that the drive unit 1 approaches the fixed unit 2, and the mold 7 and the workpiece 7 are moved. In the thermal method, the transfer body 6 is brought into contact, and the temperature is raised to a predetermined temperature, and pressurization is started after the predetermined temperature is reached. After the pressurization is completed, the transfer body 6 is cooled to be equal to or lower than the glass transition temperature. After the completion, the drive unit 1 moves in a direction away from the fixed unit 2, and the transfer is completed.

  In the case of the photo-curing type, it is possible to omit the temperature raising operation after the mold 7 and the transfer target 6 are in contact with each other. Is cured, a cooling operation is performed, and the drive unit 1 is moved in a direction away from the fixed unit 2 to complete the transfer.

  Here, as a method for detecting that the mold 7 and the transfer target 6 are in contact with each other, the pressure generated when the mold 7 and the transfer target 6 are in contact with each other is detected by a load cell. Can be detected. The pressure to be detected can be set separately. In addition, it can be detected by attaching an acceleration sensor that detects acceleration generated when the mold 7 and the transfer target 6 are in contact with each other.

In addition, a contact-type and non-contact-type sensor for detecting contact may be provided separately. In addition to measuring the gap between the drive unit 1 and the fixed unit 2, the mold 7 and the transfer target This is a sensing method that can correct the thickness variation of the body 6.
Here, the rotation speed of the servo motor 9 is set to a normal operation speed at a high speed, and immediately before the mold 7 and the transfer target 6 are in contact with each other and to a pressurization operation after the contact is set to a low speed operation. Significant tact shortening and load control can be achieved with higher accuracy than before.

  When the mold 7 is a wafer and the transfer target 6 is a resist, the thickness of each material is not extremely different and the variation is about several tens of μm. It is desirable to move at a high speed. At this time, an arbitrary position can be set.

Although the transfer target 6 may be in the form of a film, a liquid material such as a photoresist can be used as the transfer target 6 by separately applying a resist to a substrate.
Next, a thin film forming control method will be described.

  For example, when photoresist tenting is performed on a wafer, a wafer is used as the mold 7 and a resist is used as the transfer target 6, which are held by the driving unit 1 and the fixing unit 2, respectively. Next, when the servo motor 9 rotates, the drive unit 1 approaches the fixed unit 2 side by the ball screw 11.

  The drive unit 1 approaches the fixed unit 2 at high speed, and the rotation speed of the servo motor 9 is switched to low speed at the arbitrary position. After that, it moves at a low speed to a position where the contact between the mold 7 and the transfer target 6 can be confirmed.

  When the contact is confirmed, the rotation operation of the servo motor 9 is immediately stopped, and the gap between the mold 7 and the drive unit 1 is measured by the fixed part displacement sensor 5 or the working part displacement sensor 4, and the value is calculated. It is assumed that the initial film thickness X1 of the transferred body 6 is set.

Further, the target final film thickness is set as the target film thickness X2, and the film thickness of the transferred portion 6 of the fixed portion displacement sensor 5 or the drive portion displacement sensor 4 measured during pressurization is corrected by the actually measured film thickness X3. When the value is a1, the following equation is given.
(X1-X2) × a1 = (X1-X3) (Formula 1.1)
Here, the value obtained by subtracting the target film thickness X2 from the initial film thickness X1 is the target crushing amount T1 of the transfer body 6, and is actually measured when the initial film thickness X1 is controlled and manufactured with the target film thickness X2. The actual collapse amount T2 of the transfer body 6 is obtained by subtracting the film thickness X3, and the correction value a1 is a value obtained by dividing the actual collapse amount T2 by the target collapse amount T1, and the collapse amount is as shown in FIG. Linearity is obtained.

  From the above, when the initial film thickness X1 of the transfer body 6 is detected, the target collapse amount T1 is calculated, and the correction value a1 is divided from the target collapse amount T1 to obtain the set collapse amount T3.

Here, as shown in Expression 1.2, a value obtained by subtracting the actual collapse amount T3 from the initial film thickness X1 of the transfer target 6 is detected by the fixed portion displacement sensor 5 or the drive portion displacement sensor 4. By setting the film thickness target value Y1 of the transfer body 6 and reaching the film thickness target value Y1, the thin film of the transfer body 6 can be controlled by releasing the pressure.
(X1-T3) = Y1 (Formula 1.2)
For example, when the initial film thickness X1 is 1.4 .mu.m and the target film thickness X2 is 1.2 .mu.m, if the amount X3 of the manufactured transfer target 6 is actually crushed is 1.0 .mu.m, the target crushed amount T1 is 0.2 .mu.m. Since the amount T2 is 0.4 μm, the correction value a1 is 2, and the set collapse amount T3 that must actually be set is obtained by dividing the target collapse amount T1 by the correction value a1, that is, 0.1 μm. From this, it is found that the film thickness target value Y1 is 1.3 μm.

  From the above, simply crushing the transfer body 6 from the initial film thickness X1 to the target value X2 causes a large error with the actual crushing amount T2, and high-precision film thickness control cannot be performed.

  Further, since the linearity of the correction value a1 varies depending on the material and physical properties of the transfer target 6, the correction value a1 varies depending on the heating temperature and the pressure load. Generally, as the heating temperature increases, the coefficient of the linear straight line obtained from the calculation increases, and even in the pressurization load, the coefficient of the linear straight line increases as the pressurization load increases. These can be obtained from the physical property values, but it is desirable to actually measure them once to obtain the correction value a1.

Here, the mold 7 held by the driving unit 1 and the transfer target 6 held by the fixing unit 2 hold the transfer target 6 by the driving unit 1 and hold the mold 7 by the fixing unit 2. It may be a mechanism.
Further, the drive unit 1 and the fixed unit 2 are vertically symmetric, and the drive unit 1 may be installed at the upper part, the fixed unit 2 may be installed at the lower part, and the drive unit 1 may be moved up and down from the upper side. It is also possible to use a configuration.

  The drive portion displacement sensor and the fixed portion displacement sensor may be attached anywhere as long as they are within the plane in which the transfer body 6 and the mold 7 are in contact with each other. Any position may be used as long as the position matches the minute hole in the body 6 or the mold 7. Moreover, it is sufficient that either the drive unit displacement sensor or the fixed unit displacement sensor is attached.

  In the embodiment of the present invention, the mold 7 is a structure having a fine structure formed on the surface, and the material is not particularly limited, but a silicon wafer, quartz, Ni foil and the like are preferably exemplified from the viewpoint of strength. .

  Furthermore, the transfer object to which the fine structure of the embodiment of the present invention is transferred is not particularly limited, but is selected according to the desired purpose. Specifically, polyethylene, polypropylene, polyvinyl alcohol, polyvinylidene chloride, polyethylene terephthalate, polyvinyl chloride, polystyrene, ABS resin, AS resin, acrylic resin, polyamide, polyacetal, polybutylene terephthalate, glass reinforced polyethylene terephthalate, polycarbonate, modified Thermoplastic resins such as polyphenylene ether, polyphenylene sulfide, polyether ether ketone, liquid crystalline polymer, fluororesin, polyarate, polysulfone, polyethersulfone, polyamideimide, polyetherimide, thermoplastic polyimide, phenol resin, melamine resin, urea Resin, epoxy resin, unsaturated polyester resin, alkyd resin, silicone resin, diallyl phthalate resin, poly Bromide bismaleimide thermosetting resin poly bis amide triazole, etc., and it is also possible to use two or more kinds of these blended material.

  These resins may be supplied in the form of a single film or may be formed from several nm to several hundred μm on the surface of the support substrate. Here, the support substrate is a substrate that supports a member on which a pattern is formed, and the material thereof is not particularly limited, but has a predetermined strength, and the surface of the member on which the fine structure is formed is flat. I just need it.

  In the above-described embodiment, a thermal nanoimprint apparatus that forms a microstructure by heating, pressurizing, and cooling a transfer object using a stamper having fine irregularities of nanometers or micrometers on the surface. The transfer device has been described.

  In the above transfer apparatus, the transfer and the thickness forming control of the transfer target in the tenting technique for forming a thin film on the object are also described, but the present invention is not limited to this, and the configuration and Even if the method in the transfer is modified or changed, it can be said that it relates to the technique of the present invention.

DESCRIPTION OF SYMBOLS 1 Drive and type | mold holding | maintenance part 2 Fixed part and to-be-transferred object holding part 3 Base 4 Drive part displacement sensor 5 Fixed part displacement sensor 6 To-be-transferred body 7 Mold 8 Drive transmission part 9 Servo motor 10 Control apparatus 11 Ball screw

Claims (11)

A fixing portion on which the transfer object is supported;
A support portion for supporting a transcript having a shape to be transferred;
A drive unit provided with the support unit and driven to move in a moving direction approaching or moving away from the fixed unit;
A mechanism for heating and cooling at least the transfer product;
A pressurizing mechanism that pressurizes the transferred body and the transferred product so as to be in contact with each other;
A measuring mechanism for measuring a distance between the transferred body and the transferred material within a range where the transferred body and the transferred material are in contact with each other;
A transfer apparatus comprising: a pressurization control mechanism unit that controls the pressurization mechanism based on a distance measured by the measurement mechanism unit; and a base that supports at least the fixing unit and the drive unit. The transfer device according to claim 1,
The transfer apparatus according to claim 1, wherein the transfer object has a hole corresponding to a position where the distance is measured by the measurement mechanism. The transfer device according to claim 1,
The transfer apparatus, wherein the transfer object is divided into a plurality of parts corresponding to positions where the distance is measured by the measurement mechanism, and a gap is provided between the transfer objects. The transfer device according to claim 2, wherein
A positioning part or a step is provided at a position where the transferred body and the support part of the transferred material are fitted to each other,
A transfer apparatus, wherein the hole and the position where the distance is measured correspond to each other when the transfer object and the support holding part are pressed against each other. The transfer device according to claim 1, wherein:
A guide mechanism unit that guides the drive unit to be movable in a movement direction with respect to the fixed unit;
A mechanism for detecting a load applied to the drive unit;
A braking mechanism for controlling braking with an arbitrary load when a load is applied to the driving unit;
A mechanism unit for controlling the moving speed, torque, and moving position of the driving unit;
A transfer apparatus, further comprising at least one mechanism part. The transfer device according to any one of claims 1 to 5,
The transcript is a mold,
The transfer device according to claim 1, wherein the mold has a concavo-convex structure in a range of several μm to several nm on the surface of a silicon wafer, Ni replica, or quartz. The transfer device according to any one of claims 1 to 5,
The transfer apparatus, wherein the transfer object is a film having a thickness in the range of several nanometers to several hundred micrometers. The transfer device according to any one of claims 1 to 5,
A transfer apparatus, further comprising a contact detection mechanism that detects that the transfer target and the transfer object are in contact with each other. The transfer device according to claim 8, wherein
A transfer device, wherein the contact detection mechanism uses a pressure detector. The transfer device according to claim 8, wherein
The transfer device, wherein the contact detection mechanism is based on measuring a change in acceleration of the drive unit using an acceleration detector. The transfer device according to any one of claims 1 to 5,
The transcript is a substrate,
A transfer apparatus, wherein a pattern to be transferred is formed on the substrate.

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