JP2013046168A - Manufacturing method of vibration device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a vibration device capable of distributing to a request for downsizing, miniaturization, and commercial production of the vibration device, and further simplifying a manufacturing step.SOLUTION: A manufacturing method of a vibration device of the present invention comprises the steps of: preparing a base substrate and a lid body including a part in which an adhesion layer having a recess is bonded to the base substrate; mounting a vibration piece on the base substrate; bonding the lid body to the base substrate via the adhesion layer so that the vibration piece is housed in a cavity; deaerating the inside of the cavity via the recess; and blocking the recess by melting the adhesion layer.

Description

  The present invention relates to a method for manufacturing a vibrating device.

  A sensor module (motion sensor) that can detect physical quantities such as acceleration and rotational angular velocity, and is based on, for example, a sensor element such as a gyro sensor crystal resonator (gyro vibration side) and a semiconductor circuit element that drives the sensor element. A vibrating device housed in a substrate is known (Patent Document 1). In the manufacturing process of such a vibration device, after a sensor element or a semiconductor circuit element is mounted in the package, a sealing process is performed in which a deaeration process is performed in which the inside of the package is in a reduced pressure state or a vacuum state.

  In such a sealing process involving vacuum processing, a through hole is usually formed in the package or the lid, and a deaeration process is performed in the package through the through hole. After the deaeration process, Au is placed in the through hole. -Including Ge (gold / germanium) balls and melting by laser treatment.

  However, in recent years, there is a very high demand for further downsizing / miniaturization and commercial production of such vibration devices. For example, in recent years, the device size of the target vibration device has been extremely reduced to about 1 mm × 1 mm, and the miniaturization of the constituent members has been remarkable. The need for through-holes for the sealing process for vibration devices that are becoming smaller in size is not limited to the process for through-holes in the manufacturing process. This hinders miniaturization and miniaturization of members.

  In addition, the Au / Ge balls used in such a sealing process are very expensive, leading to an increase in the production cost of the vibration device.

JP 2004-248113 A

  SUMMARY OF THE INVENTION In view of the above circumstances, the present invention aims to provide a method for manufacturing a vibration device that contributes to the demand for downsizing / miniaturization of vibration devices and commercial production, and that can further simplify the manufacturing process. And

  The method for manufacturing a vibrating device according to the present invention includes a step of preparing a base substrate and a lid provided with a bonding layer having a concave portion at a portion to be bonded to the base substrate, and a step of mounting a vibrating piece on the base substrate. Bonding the lid to the base substrate via the adhesive layer so that the resonator element is accommodated in the cavity; degassing the cavity via the recess; Melting the adhesive layer to close the recess.

  According to the present invention, the deaeration process in the sealing process in the manufacturing process of the vibration device can be performed not through the through-hole formed in the base substrate or the lid but through the recess formed in the adhesive layer. Therefore, it is not necessary to provide a through hole in the base substrate or the lid, and the manufacturing process is simplified. In addition, since it is not necessary to consider the space for the through hole when designing the layout of the vibration device, the vibration device can be reduced in size. In addition, since the sealing process can be performed without using the Au / Ge balls that have been required so far, the material cost of the vibration device can be reduced. From the above, it is possible to provide a method for manufacturing a vibration device that contributes to the demands for downsizing / miniaturization of vibration devices and commercial production and that can further simplify the manufacturing process.

  In the vibrating device manufacturing method according to the present invention, the step of preparing the lid includes the step of preparing a first metal substrate having a first surface, and the first surface of the first metal substrate. A step of forming a conductive layer made of the same material as the adhesive layer, a step of etching the first metal substrate and the conductive layer, and a step of forming the recess in the patterned conductive layer. May be included.

  According to this, the step of providing a recess serving as a through hole in the base substrate or the lid and the step of providing an adhesive layer for joining the lid and the base substrate can be easily performed in the step of forming the lid. . Therefore, simplification of the manufacturing method of the vibration device can be achieved.

  In the vibration device manufacturing method according to the present invention, the step of preparing the lid may include forming a plurality of the lids from the first metal substrate.

  According to this, the manufacturing method of the vibration device which contributes by the request | requirement of commercial production can be provided.

  In the method for manufacturing a vibration device according to the present invention, the step of forming the concave portion may include a step of cutting the conductive layer.

  According to this, it can form with a simpler process compared with the through-hole formed by the well-known photoresist technique and etching technique.

  In the method for manufacturing a vibrating device according to the present invention, the outline of the portion of the lid that joins the base substrate may be rectangular, and the recess may be formed symmetrically with respect to the center point of the rectangle.

  According to this, the deaeration process in a sealing process can be performed efficiently.

  In the method for manufacturing a vibrating device according to the present invention, the recess may be formed at four corners of the portion.

  According to this, the deaeration process in a sealing process can be performed efficiently.

  In the vibrating device manufacturing method according to the present invention, the step of preparing the base substrate includes preparing a second metal substrate having a first surface and a second surface opposite to the first surface. Etching the second metal substrate from the first surface side to form a plurality of metal protrusions, and forming an insulating layer on the first surface side so as to cover the plurality of metal protrusions Etching the second metal substrate from the second surface side so that the plurality of metal protrusions are independent from each other, forming a plurality of metal members made of the metal protrusions, and the insulating layer A step of grinding the insulating layer so as to expose a plurality of the metal members, and a step of forming a wiring pattern connected to the metal members.

  According to this, the manufacturing method of the vibration device which contributes by the request | requirement of commercial production can be provided.

  In the method for manufacturing a vibrating device according to the present invention, in the step of mounting the vibrating piece, the plurality of vibrating pieces are respectively mounted on a substrate including the plurality of base substrates, and the lid is joined to the base substrate. Then, the method may further include a step of cutting the substrate after the step of accommodating the plurality of vibrating pieces by the plurality of lid bodies and closing the concave portion.

  According to this, the manufacturing method of the vibration device which contributes by the request | requirement of commercial production can be provided.

The top view and sectional view which show typically the principal part of vibration device 100. The enlarged view of the broken-line part II in FIG. Sectional drawing which shows the principal part of the vibration device 101 typically, and the enlarged view in the broken line part IIIB. Sectional drawing which shows the principal part of the vibration device 200 typically, and the enlarged view in the broken line part IVB. 6 is a flowchart for explaining a method for manufacturing a vibrating device according to the embodiment. The flowchart explaining the sealing process of the manufacturing method of the vibration device which concerns on this embodiment. The flowchart explaining the process of preparing the cover body of the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. The top view which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing and a top view which explain typically the manufacturing method of the vibration device concerning this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. The top view which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. The flowchart explaining the process of preparing the base substrate of the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. The top view which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on this embodiment. Sectional drawing which illustrates typically the manufacturing method of the vibration device which concerns on a modification. FIG. 6 is a diagram schematically illustrating an example of an electronic apparatus.

  An example of an embodiment to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited only to the following embodiments. The present invention includes any combination of the following embodiments and modifications thereof.

1. Hereinafter, an example of a vibration device to which the method for manufacturing a vibration device according to the present embodiment is applied will be described with reference to the drawings.

1.1 First Mode FIG. 1 is a schematic diagram illustrating a configuration of a vibration device 100 (a first mode of a vibration device) to which the method for manufacturing a vibration device according to the present embodiment is applied. FIG. 1A is a plan view schematically showing a plan view on a surface on which the vibrating piece 70 of the vibrating device 100 is mounted, omitting the lid 30 for convenience, and FIG. FIG. 1A is a cross-sectional view taken along line IB-IB in FIG. 1A, and FIG. 1A schematically illustrates a plan view of the bottom surface of the vibration device 100 opposite to the surface on which the vibration piece 70 is mounted. It is a top view. FIG. 2 is an enlarged view of a broken line part II in FIG.

  As shown in FIGS. 1A to 1C, the vibration device 100 includes a base substrate 10 on which the vibration piece 70 is mounted, a lid 30 that houses the vibration piece 70 in the cavity 1, and a base substrate. 10 and an adhesive layer 20 that joins the lid 30 to each other.

  As shown in FIGS. 1A and 1B, the base substrate 10 is a member on which a vibration piece 70 described later is mounted (electrically connected), and a lid 30 described later. And the vibrating piece 70 can be accommodated in the cavity 1.

  The cavity 1 is a space formed by the base substrate 10 and a lid 30 described later. The cavity 1 may be deaerated (vacuum or inert gas) and may be in a reduced pressure state, more preferably in a vacuum state. The cavity 1 may be an inert gas atmosphere such as nitrogen. Here, the base substrate 10 or the lid 30 is not formed with a through hole for deaeration treatment in the cavity 1.

  The shape and configuration of the base substrate 10 are not particularly limited as long as the base substrate 10 can be bonded to the lid body 30 and the vibration piece 70 can be accommodated. The base substrate 10 may have an opening, and may have a container shape that accommodates the resonator element 70 from the opening (see FIG. 4). Details will be described later.

  As shown in FIG. 1B, the base substrate 10 includes a first surface 12 (a mounting surface on which the resonator element 70 is mounted) and a second surface 13 (external surface) opposite to the first surface 12. It may be a plate-like member having a bottom surface on which terminals are formed. The first surface 12 and the second surface 13 may be rectangular flat surfaces. Although not shown, the first surface 12 and the second surface 13 are not flat surfaces and may be formed with recesses.

  The material of the base substrate 10 may be, for example, a plate-like member formed from metal, resin, single crystal silicon, glass, ceramics, or the like. More preferably, for example, as shown in FIG. 1B, the base substrate 10 includes a plurality of metal members 14 (14 a, 14 b) and an insulating layer 15 that holds the plurality of metal members 14. Can do.

  As shown in FIGS. 1A to 1C, the metal member 14 a is a columnar member (post-shaped member), penetrates the base substrate 10, and has a first surface 12 and a second surface 13. The first surface 12 and the second surface 13 are partly exposed.

  The exposed portion of the first surface 12 of the metal member 14a may be a part of a die pad for mounting a vibration piece 70 or an IC chip 80 described later. Further, the exposed portion of the second surface 13 of the metal member 14a may be a part of an external terminal for connecting the vibration device 100 to an external substrate such as a mother board. The at least one metal member 14a may be a ground penetrating electrode. Further, the at least one metal member 14a may be a through electrode for supplying power.

  As shown in FIGS. 1A to 1C, the metal member 14 b is an annular member that surrounds the plurality of metal members 14 a, and does not penetrate the base substrate 10 and is exposed on the first surface 12. , Constituting a part of the first surface 12. The exposed portion of the first surface 12 of the metal member 14b may be a joint portion of the base substrate 10 with the lid 30. Therefore, the exposed part of the first surface 12 of the metal member 14 b may have a shape corresponding to the joint part of the lid 30.

  The cross-sectional shape of the metal members 14a and 14b in the thickness direction of the base substrate 10 may be such that the cross-sectional area (width) gradually decreases in the direction from the first surface 12 to the second surface 13. Good. Although not shown, the metal member 14 (14a, 14b) is formed so that the cross-sectional area (width) of the metal member 14a is the same in the direction from the first surface 12 to the second surface 13. It may be.

  The material of the metal member 14 (14a, 14b) is not particularly limited as long as it is a metal. Examples of the metal member 14 include iron (Fe), copper (Cu), gold (Au), nickel (Ni), manganese (Mn), titanium (Ti), tungsten (W), aluminum (Al), and aluminum oxide. (Alumina), 42 alloy (Fe—Ni alloy), Kovar (Fe—Ni—Co alloy) or the like may be used.

  As shown in FIG. 1B, the insulating layer 15 holding the plurality of metal members 14 fills the space between the plurality of metal members 14 (14a, 14b), and the first surface 12 and the second surface. 13 is configured. The material of the insulating layer 15 is not particularly limited as long as it has insulating properties. For the insulating layer 15, for example, a known resin material such as a thermosetting epoxy resin may be used.

  As shown in FIGS. 1A to 1C, wiring patterns 17 (17 a, 17 b, 17 c, 17 d) are formed on the first surface 12 and the second surface 13 of the base substrate 10. . First wiring patterns 17 a, 17 b and 17 c may be formed on the first surface 12 of the base substrate 10, and a second wiring pattern 17 d may be formed on the second surface 13.

  The wiring pattern 17 may be a rearrangement wiring connected to the metal member 14a. Part of the first wiring patterns 17a, 17b, and 17c may be electrode pads for mounting a vibration piece 70 and an IC chip 80 described later. A part of the second wiring pattern 17d may be an external connection terminal for connecting to an external substrate such as a mother board.

  As shown in FIG. 1A, the first wiring patterns 17a, 17b, and 17c are connected to the metal member 14a and connected to the metal member 14a and the wiring pattern 17a on which the resonator element 70 and the IC chip 80 are mounted. Then, the wiring pattern 17b on which only the IC chip 80 is mounted and the wiring pattern 17c connected to the metal member 14b and arranged at the joint portion with the lid 30 may be included. As shown in FIG. 1B, the second wiring pattern 17d may be connected to the metal member 14a to form external connection terminals at the four corners of the second surface 13.

  The material and configuration of the wiring pattern 17 are not particularly limited. The wiring pattern 17 may have a single-layer structure, or although not shown, for example, may be formed with a stacked structure of a plurality of conductive films.

  The wiring pattern 17 is, for example, platinum (Pt), iridium (Ir), gold (Au), nickel (Ni), copper (Cu), Ti (titanium), W (tungsten), chromium (Cr), tin (Sn). ) And the like. The wiring pattern 17 is more preferably a laminated structure of a titanium / tungsten layer (first layer), a copper layer (second layer), a nickel layer (third layer), and a gold layer (fourth layer). Also good.

  As shown in FIG. 1B, the lid 30 and the base substrate 10 are bonded to each other on the first surface 12 side of the base substrate 10, and the vibrating piece 70 is accommodated in the cavity 1. As shown in FIG. 2, the lid 30 is bonded to the base substrate 10 via the adhesive layer 20.

  As shown in FIGS. 1B and 2, the adhesive layer 20 can join the base substrate 10 and the lid 30 and seal the inside of the cavity 1. As shown in FIG. 2, for example, the adhesive layer 20 may be provided so as to join the first wiring pattern 17 c of the base substrate 10 and the lid 30. By filling the space between the base substrate 10 and the lid 30 with the adhesive layer 20, it is possible to reliably seal the inside of the vacuum-processed cavity 1.

  The adhesive layer 20 is not particularly limited as long as it can be melted at a specific temperature and the base substrate 10 and the lid 30 can be joined. Examples of the material of the adhesive layer 20 include metal brazing materials such as Sn solder and Au solder.

  The shape and structure of the lid 30 are not particularly limited as long as the lid 30 can be bonded to the base substrate 10 to form the cavity 1 that accommodates the resonator element 70 and the like. For example, as shown in FIGS. 1B and 2, the lid 30 may have a container shape having an opening 36.

  Further, the lid 30 may have a plate shape when the base substrate 10 has a container shape (see FIG. 4). Details will be described later.

  The lid 30 may have an inner surface 31 and an outer surface 32 as shown in FIG. The inner surface 31 is a surface constituting the wall surface of the cavity 1 of the lid body 30, and the outer surface 32 is the surface on the opposite atmosphere side.

  The inner surface 31 does not have a corner portion, and may be composed of a flat surface and / or a curved surface. As shown in FIG. 1B, the outer surface 32 may have an upper surface 32a that is substantially parallel to the first surface 12 of the base substrate 10, and a side surface 32b that is continuous with the upper surface 32a.

  Here, as shown in FIG. 2, a surface continuous to the inner surface 31 and the side surface 32 b is referred to as a bonding surface 33. The bonding surface 33 is a surface on which the lid 30 is bonded to the base substrate 10 and is a flat surface.

  The material of the lid 30 is not particularly limited. Examples of the material of the lid 30 include metals, resins, single crystal silicon, glass, ceramics, and the like.

  From the viewpoint of processability such as processing accuracy and ease of processing, the lid 30 is preferably made of iron (Fe), copper (Cu), gold (Au), nickel (Ni), manganese (Mn). , Titanium (Ti), tungsten (W), aluminum (Al), aluminum oxide (alumina), 42 alloy (Fe—Ni alloy), Kovar (Fe—Ni—Co alloy), and other metals.

  More preferably, the material of the lid 30 may be selected so as to be the same metal as the metal member 14 used for the base substrate 10. According to this, the internal stress which arises according to a temperature change can be relieved, and the reliability of the vibration device 100 can be improved more.

  The resonator element 70 accommodated in the cavity 1 may be any form of resonator element. Examples of the vibration piece 70 include an AT vibration piece, a tuning fork type vibration piece, a SAW vibration piece, and a walk type vibration piece. In addition, the vibrating piece 70 may be formed of a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, or may be formed of a material that does not have piezoelectricity. When the vibrating piece 70 is formed of a material that does not have piezoelectricity, for example, a piezoelectric element may be further included in the configuration of the vibrating piece 70.

  In this embodiment, the case where the vibrating piece 70 is a tuning fork type vibrating piece formed of quartz is illustrated. The vibration piece 70 is supported on a wall surface (first surface 12 in the illustrated example) in the cavity 1 by a conductive support member 76 such as a conductive adhesive, a conductive paste, or a brazing material. Can do. As shown in FIG. 1A, the vibrating piece 70 is supported by a support member 76 on the wiring pattern 17. The vibrating piece 70 of this embodiment has two vibrating rods 71 and is supported by the base 72 in a cantilever shape. The vibrating rod 71 extending from the base 72 can bend and vibrate within the cavity 1. Although not shown, the vibrating rod 71 and the base 72 are provided with a plurality of electrodes for bending and vibrating at least the vibrating rod 71.

  As shown in FIGS. 1A and 1B, an IC chip 80 mounted on the base substrate 10 may be accommodated in the cavity 1. As shown in FIG. 1B, the IC chip 80 is mounted on the first surface 12 of the base substrate 10 by, for example, a brazing material 81 and is electrically connected to the wiring pattern 17. The IC chip 80 is an oscillation circuit component, and can include a drive circuit for driving and vibrating the vibrating piece 70 and a detection circuit for detecting detected vibration generated in the vibrating piece 70 when an angular velocity is applied. .

  The vibration device 100 can be configured with any of the above configurations.

1.2 Second Aspect Next, a vibration device to which the method for manufacturing a vibration device according to the present embodiment is applied, and a vibration device 101 having a different aspect (second aspect of the vibration device) is described with reference to the drawings. While explaining.

  FIG. 3 is a schematic diagram illustrating the configuration of the vibration device 101. FIG. 3A is a cross-sectional view of the vibration device 101, and the cross-sectional portion corresponds to the line IB-IB in FIG. FIG. 3B is an enlarged view of a broken line part IIIB in FIG.

  Note that the vibration device 101 differs from the vibration device 100 only in the configuration of the lid 30. Hereinafter, in the description of the vibration device 101, the substantially same configuration as the vibration device 100 is denoted by the same reference numeral, and detailed description thereof is omitted.

  As shown in FIGS. 3A and 3B, the lid body 130 has a container shape having an opening 136 and has an inner surface 131 and an outer surface 132. The inner surface 131 is a surface that constitutes the wall surface of the cavity 1 of the lid 130, and the outer surface 132 is the opposite air side surface.

  The inner surface 131 does not have a corner portion, and may be composed of a flat surface and / or a curved surface. As shown in FIGS. 3A and 3B, the outer surface 132 includes an upper surface 132a that is substantially parallel to the first surface 12 of the base substrate 10, a first side surface 132b that is continuous with the upper surface 132a, and The second side surface 132c is continuous with the first side surface 132b.

  Here, as illustrated in FIG. 3B, a surface that is continuous with the inner surface 131 and the second side surface 132 c is a bonding surface 133. The bonding surface 133 is a surface on which the lid 130 is bonded to the base substrate 10 and is a flat surface. As shown in FIGS. 3A and 3B, the first side surface 132b is a tapered surface and is a curved surface convex toward the base substrate 10 side. Further, as shown in FIG. 3B, the second side surface 132c is a flat surface that is substantially perpendicular to the first surface 12.

  As shown in FIGS. 3A and 3B, the lid body 130 includes an extension part 134 configured by a part of the first side surface 132 b, the second side surface 132 c, and a part of the bonding surface 133. Have The outward extending part 134 is a part that extends in the direction of the outer side (opposite to the cavity 1 side) in the opening 136 of the lid 130.

  The vibration device 101 can be configured with any of the above configurations.

1.3 Third Aspect Next, a vibration device to which the method for manufacturing a vibration device according to the present embodiment is applied, and a vibration device 200 having a different aspect (third aspect of the vibration device) is described with reference to the drawings. While explaining.

  FIG. 4 is a schematic diagram illustrating the configuration of the vibration device 200. 4A is a cross-sectional view of the vibrating device 200, and FIG. 4B is an enlarged view of a broken line IVB in FIG. 4A.

  The vibrating device 200 is different from the vibrating device 100 in the configuration of the base substrate 10 and the lid 30. Hereinafter, in the description of the vibration device 200, the substantially same configuration as the vibration device 100 is denoted by the same reference numeral, and the detailed description thereof is omitted.

  As shown in FIGS. 4A and 4B, the base substrate 210 has a container shape having an opening 216, and the lid 230 is a plate-like member.

  As shown in FIG. 4A, the base substrate 210 has a shape that can accommodate the resonator element 70 from the opening 216. The base substrate 210 may be processed from one member. As shown in FIG. 4A, the base substrate 210 includes a base substrate 211 on which the vibrating piece 70 and the like are mounted, and a wall portion 212 that houses the vibrating piece 70. It may be configured.

  As shown in FIG. 4A, the lid 230 is a plate-like member and seals the opening 216 of the base substrate 210. Here, as shown in FIG. 4B, the base substrate 210 and the lid body 230 are bonded together by the adhesive layer 20.

  The vibration device 200 can be configured with any of the above configurations.

2. Hereinafter, a method for manufacturing a vibrating device according to the present embodiment will be described with reference to the drawings. 5 to 20 are schematic views or flowcharts illustrating the method for manufacturing the vibration device according to this embodiment.

  FIG. 5 is a flowchart for explaining the manufacturing method of the vibrating device according to the present embodiment, and FIG. 6 is a flowchart of the sealing step (S4) in FIG.

  As shown in FIG.5 and FIG.6, the process of manufacturing a vibration device prepares the cover body 30 provided in the part which joins the base substrate 10 and the contact bonding layer which has a recessed part with a base substrate (S1), A step (S2) of mounting the resonator element 70 on the base substrate 10, a step of mounting the lid 30 on the base substrate 10 via an adhesive layer, and housing the resonator element 70 in the cavity 1 (S4-1), It includes a step (S4-2) of degassing the inside of the cavity 1 through the recess, and a heat treatment step (S4-3) for melting the adhesive layer and closing the recess.

  In the following description, first, the steps (S11 to S16) of preparing the lid bodies 30 and 130 will be described with reference to FIGS. Next, the steps (S21 to S29) of preparing the base substrate 10 will be described with reference to FIGS. 14 to 17, and then the entire method (S1 to S6) for manufacturing the vibration device according to the present embodiment will be described. .

2.1 Preparation of lid (S11 to S16)
FIG. 7 is a flowchart for explaining a lid preparation process. FIG. 8 is a cross-sectional view for explaining a method for manufacturing the lid 30. FIG. 9 is a plan view of the metal substrate 30 ′ after the recess formation step (S15) as seen from the adhesive layer 25 side. It is a figure explaining the cover body 30 after the cover preparation process.

  As shown in FIG. 7, the step of preparing the lid 30 includes the step of preparing a metal substrate 30 ′ (S11), the step of forming a conductive layer on the metal substrate 30 ′ (S12), the metal substrate 30 ′, And a step of etching the conductive layer (S13, S14) and a step of forming a recess in the patterned conductive layer (S15). Further, the step of preparing the lid 30 may include dividing the patterned metal substrate 30 ′ into pieces and simultaneously forming a plurality of lids 30 (S 15).

[Preparation of metal substrate (S11)]
First, a metal substrate 30 ′ is prepared. The metal substrate 30 ′ is a member that becomes the lid body 30. As shown in FIG. 8A, the metal substrate 30 ′ includes a first surface 30 a and a second surface 30 b opposite to the first surface 30 a. It is a substrate which has. Therefore, the material of the metal substrate 30 ′ is selected from the material of the lid 30.

  The metal substrate 30 ′ may be provided with a plurality of first regions A and a second region B surrounding the first region A. The first region A may be a region that becomes the lid 30, and the second region B may be a region (dicing line) that is cut in the process of dividing into pieces.

[Conductive layer formation (S12)]
Next, as shown in FIG. 8A, a conductive layer 20a is formed on the entire first surface 30a by, for example, electrolytic plating. The conductive layer 20 a is a conductive layer that becomes the adhesive layer 20. Therefore, the conductive layer 20a is formed from a metal material having a first melting point.

[Resist pattern formation (S13)]
Next, as shown in FIG. 8B, a resist pattern 50a having a desired patterning is formed on the conductive layer 20a by a known photolithography technique. Also, the resist pattern 50b may be formed so as to cover the entire surface of the second surface 30b.

[Etching of Metal Substrate and Conductive Layer (S14)]
Next, as shown in FIG. 8C, the conductive layer 20a and the metal substrate 30 ′ are patterned only from the first surface 30a side. The patterning method is not particularly limited, and a known etching technique such as wet etching or dry etching, a sandblasting process, a physical process using a cutting tool, or the like can be used.

  Preferably, dip type or spray type wet etching can be employed. For example, when the conductive layer 20a is tin (Sn), a ferric chloride solution can be used as the etching solution for the conductive layer 20a. Further, when the metal substrate 30 ′ is a 42 alloy alloy, a ferric chloride solution can be used as an etching solution for the metal substrate 30 ′.

  In the etching step (S14) of the metal substrate 30 ′, the metal substrate 30 ′ is half-etched so as to form a plurality of recesses 37 (37a, 37b). The recess 37a is a recess formed in the first region A, and the recess 37b is a recess formed along the second region B that is a dicing line. As shown in FIG. 8C, a plurality of metal protrusions 38 can thereby be formed. Further, the shape of the plurality of recesses 37 (37a, 37b) can be set to a desired shape by controlling the time required for etching in spray-type wet etching. The resist pattern 50 (50a, 50b) is appropriately removed after the etching process of the metal substrate 30 ′ and the conductive layer 20a.

[Concavity formation (S15)]
Next, as shown in FIG. 8C, a recess 26 is formed in the etched conductive layer 20a. FIG. 9 is a plan view of the metal substrate 30 ′ with the recesses 26 formed from the first surface 30 a side after this step (S 15).

  As shown in FIGS. 8C and 9, the recess 26 is formed on the surface of the conductive layer 20 a that is bonded to the base substrate 10. The recess 26 is formed so as to cut the annular conductive layer 20a. However, the recess 26 is formed so as not to completely cut the conductive layer 20a and reach the metal substrate 30 ′. The recess 26 may have a groove shape.

  Although the formation method of the recessed part 26 is not specifically limited, It is preferable to cut the conductive layer 20a using a cutting tool such as a cutter or a cutting plate on which a convex part corresponding to the arrangement and shape of the recessed part 26 is formed. Can do. For example, the cutting plate is formed of a metal harder than the conductive layer 20a.

  By this step, as shown in FIG. 9, in each first region A of the metal substrate 30 ′, an annular metal protrusion 38 is formed in which the adhesive layer 20a having the recess 26 formed at the tip is formed. be able to.

[Individualization (S16)]
Next, the adhesive layer 20a and the metal substrate 30 ′ are cut along the second region B which is a dicing line, and the plurality of first regions A are separated into pieces. As a result, as shown in FIG. 8D, a lid 30 provided with a portion where the adhesive layer 25 having the recess 26 is joined to the base substrate 10 can be formed. In addition, by this step, as shown in FIG. 8D, a plurality of lids 30 can be formed at the same time. The cutting method is not particularly limited, and a known dicing method can be used.

  FIG. 10A is a cross-sectional view illustrating the lid 30 after the singulation step (S16), and FIG. 10B is a plan view of the lid 30 as viewed from the adhesive layer 25 side. As shown in FIG. 10A, the lid 30 having the inner surface 31, the outer surface 32 (the upper surface 32a, the side surface 32b), and the bonding surface 33 can be formed from the above steps.

  As shown in FIG. 10B, the outline of the outer shape of the portion (adhesive layer 25) to be joined to the base substrate of the lid 30 may be rectangular in the plan view. Further, a plurality of the recesses 26 may be provided, and may be arranged symmetrically with respect to the rectangular center point C formed by the outline of the outer shape of the joined portion. According to this, deaeration can be performed efficiently. Moreover, the recessed part 26 may be formed in the four corners of a junction part, as shown in FIG.10 (B).

  According to the manufacturing method of the lid body 30 described above, since the metal substrate 30 ′ whose outer shape can be processed by a method with high processing accuracy such as chemical etching is used, the lid body 30 having a desired outer shape is prepared with high dimensional accuracy. It becomes possible to do.

  Further, by processing the metal substrate 30 ′ having a substantially uniform thickness, the width W 1 between the upper surface 32 a and the bonding surface 33 at the periphery of the opening 36 of the lid 30 as shown in FIG. 10A. Can be made uniform easily. In other words, by using the metal substrate 30 ′ having a substantially uniform thickness, the high flatness of the bonding surface 33 can be easily ensured.

  Further, since the plurality of lids 30 are processed from the common metal substrate 30 ′, the quality variation in the dimensions of the lid 30 is reduced, and the shape quality is improved. Therefore, it is possible to reduce the possibility that a bonding failure with the base substrate 10 occurs due to a processing accuracy defect in the manufacturing process of the lid 30.

  From the above, according to the method of manufacturing the lid body 30 using the metal substrate 30 ′, the lid body 30 with high throughput and high external quality can be produced commercially, and the bonding reliability with the base substrate 10 is also high. Can be improved.

  Next, with reference to FIGS. 11-13, the manufacturing method of the cover body 130 of the vibration device 101 which concerns on a 2nd aspect is demonstrated below.

  FIG. 11 is a cross-sectional view illustrating a method of manufacturing the lid body 130, FIG. 12 is a plan view of the metal substrate 30 ′ after the recess forming step (S15), as viewed from the adhesive layer 25 side, and FIG. It is a figure explaining the cover body 130 after the preparation process of a cover body.

  Also in the step of preparing the lid 130 of the vibration device 101, as shown in FIG. 7, the step of preparing the lid 130 includes the step of preparing the metal substrate 30 ′ (S11) and the conductive layer on the metal substrate 30 ′. A step (S12) of forming the metal substrate 30 ′ and the conductive layer (S13, S14), and a step of forming a recess in the patterned conductive layer (S15). In the following, in the step of preparing the lid 130, only the steps different from the step of preparing the lid 30 will be described.

[Resist pattern formation (S13)]
As shown in FIGS. 11A and 11B, a resist pattern 50a and a resist pattern 50b are formed by a known photolithography technique on the metal substrate 30 ′ on which the conductive layer 20a is formed. In the step of preparing the lid 130, a resist pattern 50a and a resist pattern 50b having a desired patterning are formed on both the first surface 30a and the second surface 30b.

[Etching of Metal Substrate and Conductive Layer (S14)]
Next, as shown in FIG. 11C, the conductive layer 20a and the metal substrate 30 ′ are etched from both the first surface 30a and the second surface 30b side. In the etching process of the conductive layer 20 a and the metal substrate 30 ′, dip type or spray type wet etching can be suitably employed as in the preparation process of the lid 30.

  In the etching process (S14) of the metal substrate and the conductive layer, the metal substrate 30 ′ is half-etched so as to form a plurality of recesses 137 (137a, 137b). The recess 137a is a recess formed in the first region A from the first surface 30a side, and the recess 37b is formed along the second region B which is a dicing line from the second surface 30b side. It is a recess. According to this, as shown in FIG. 11C, a plurality of arch portions 138 can be formed. Thereby, as shown in FIG. 11C and FIG. 10, the conductive layer 20 a was formed at the tip in the peripheral portion and the second region B of each first region A of the metal substrate 30 ′. A grid-like arch portion 138 can be formed.

[Concavity formation (S15)]
Next, as shown in FIGS. 11C and 12, a recess 26 is formed in the conductive layer 20a. In the step of preparing the lid 130, the recesses 26 are formed so as to intersect as shown in FIG.

[Individualization (S16)]
Next, the patterned metal substrate 30 ′ is cut along the second region B which is a dicing line, and the plurality of first regions A are separated into pieces. In the singulation process, the central portion of the arch portion 138 is cut. Thereby, as shown in FIG. 11D, the lid body 130 having the outer extending portion 134 can be formed.

  As shown in FIG. 13, the lid 130 having the inner surface 31, the outer surface 32 (upper surface 32 a, side surface 32 b), and the bonding surface 33 can be formed from the above steps. According to the above process, the lid body 130 can further include the outer extending portion 134 and the adhesive layer 25 (the recessed portion 26).

2.2 Preparation of base substrate (S21 to S29)
Next, steps (S21 to S29) for preparing the base substrate 10 will be described with reference to FIGS.

  As shown in FIG. 14, the step of preparing the base substrate 10 includes a step of preparing a metal substrate (S21), a step of etching the metal substrate to form a plurality of metal protrusions (S22 to S25), and a plurality of steps. Forming an insulating layer so as to cover the metal protrusions (S26), etching the metal substrate so that the plurality of metal protrusions are independent from each other, and forming a plurality of metal members made of metal protrusions (S27); A step of grinding the insulating layer so that the plurality of metal members are exposed from the insulating layer (S28) and a step of forming a wiring pattern connected to the metal member (S29) are included.

[Preparation of metal substrate (S21)]
First, a metal substrate 10 ′ is prepared. The metal substrate 10 ′ is a member that becomes the metal member 14 (14 a and 14 b) of the base substrate 10. As shown in FIG. 12A, the first surface 10 a and the first surface 10 a are opposite to each other. And a second surface 10b on the side. Here, the first surface 10a is a surface that becomes the second surface 13 side of the base substrate 10, the second surface 10b is a surface that becomes the first surface 12 side of the base substrate 10, and The material of the metal substrate 10 ′ is selected from the material of the metal member 14. In addition, the metal substrate 10 ′ has a thickness that is greater than the design thickness of the base substrate 10.

  The metal substrate 10 ′ may be provided with a plurality of first regions A ′ and a second region B ′ surrounding the first region A ′. The first region A ′ may be a region to be the base substrate 10, and the second region B ′ may be a region (dicing line) that is cut in the process of dividing into pieces.

  Next, the metal substrate 10 ′ is etched from the first surface 10a side to form a plurality of metal protrusions 14 ′. An example of the steps (S22 to S25) for forming the plurality of metal protrusions 14 'will be described below.

[First resist pattern formation (S22)]
First, as shown in FIG. 15A, a first resist pattern 51a is formed on the first surface 10a by a known photoresist technique. The first resist pattern 51a is provided in a region where the metal protrusion 14 'is formed in the first region A' and where the metal member 14a is formed. Therefore, the first resist pattern 51a can be formed in the first region A ′ corresponding to the number of the metal members 14a of the base substrate 10.

[First etching (S23)]
In the first etching step (S23), etching is performed from the first surface 10a side of the metal substrate 10 ′. In this etching step, dip type or spray type wet etching can be employed. For example, when the metal substrate 10 ′ is a 42 alloy, a ferric chloride solution can be used as the etching solution for the metal substrate 10 ′.

  In the first etching step (S23), the metal substrate 10 ′ is half-etched so as to form a plurality of recesses 10c. The plurality of recesses 10c only have to have at least a first depth D1 (a depth based on the first surface 10a), and may be the same depth or different depths. There may be.

[Second resist pattern formation (S24)]
Next, as shown in FIG. 15B, a second resist pattern 51b is formed on the half-etched surface on the first surface 10a side by a known photoresist technique. The second resist pattern 51b is provided in a region where the metal protrusion 14 'is formed in the first region A' and where the metal member 14b is formed.

[Second etching (S25)]
Next, in the second etching step (S24), further etching is performed from the first surface 10a side of the metal substrate 10 ′. In this etching step, dip type or spray type wet etching can be employed.

  In the second etching step (S25), the metal substrate 10 ′ is further half-etched so as to form a plurality of recesses 10d. The plurality of recesses 10d only need to have at least the second depth D2 (the depth with reference to the first surface 10a, and D1 <D2), and may have the same depth. However, they may have different depths. Here, the second depth D2 is a depth equal to the designed thickness of the base substrate 10.

  Through the steps S22 to S25, as shown in FIG. 15C, the metal substrate 10 ′ can be etched from the first surface 10a side to form a plurality of metal protrusions 14 ′. As shown in FIGS. 15C and 16, a plurality of post-like (substantially cylindrical) metal protrusions 14 a ′ are formed in the central region of the first region A ′, and an annular shape is formed so as to surround the central region. The metal protrusion 14b 'may be formed.

  Although not shown, the first resist pattern 51a and the second resist pattern 51b may be appropriately removed after the second etching step, or may be removed in a grinding step (S28) described later.

[Insulating material filling and solidification (S26)]
Next, as shown in FIG. 17A, an insulating material is filled and solidified so as to cover the plurality of metal protrusions 14 '(14a', 14b '), and the insulating layer 15a is moved to the first surface 10a side. Form. For example, the recess 10d is filled with an insulating material such as a thermosetting resin material having fluidity at room temperature, and the metal protrusion 14 'is covered. Thereafter, the filled insulating material is baked to form the insulating layer 15a. Here, as shown in FIG. 17A, the upper surface of the insulating layer 15a is defined as an upper surface 15b. The insulating layer in the second region B ′ is referred to as an insulating layer 15c.

  Further, after this step, when the maximum thickness of the insulating layer 15a and the metal substrate 10 'is T1 (thickness between the upper surface 15b and the second surface 10b), T1 is determined in the design of the base substrate 10. The insulating layer 15a is formed to be thicker than the thickness D2.

[Third etching (S27)]
Next, in the third etching step (S27), as shown in FIG. 17B, the metal substrate 10 ′ is etched from the second surface 10b side so that the plurality of metal protrusions 14 ′ are independent from each other. A plurality of metal members 14 (14a, 14b) including the protrusions 14 ′ are formed. Here, the state in which the plurality of metal protrusions 14 ′ are independent from each other means a state in which the metal protrusions 14 ′ are separated from each other and are not electrically connected. In this step, the insulating layer 15b is exposed on the second surface 10b side.

  When the maximum thickness of the insulating layer 15a and the metal substrate 10 ′ after this step is T2, the third etching is performed so that T2 becomes thicker than the designed thickness D2 of the base substrate 10.

  In this etching step, a known etching technique such as dipping or spraying wet etching or dry etching can be employed.

[Grinding (S28)]
Next, as shown in FIG. 17C, the insulating layer 15a is ground so that the plurality of metal members 14 (14a) are exposed from the insulating layer 15a. A known grinding tool can be used for the grinding process. For example, grinding may be performed by a disk-type grinding body that rotates at high speed.

  Here, as shown in FIG. 17C, grinding may be performed on both the first surface 10a and the second surface 10b. Further, after exposing the plurality of metal members 14a from the insulating layer 15a, the metal members 14a and the insulating layer 15a may be further ground. According to this, the metal member 14a can be exposed reliably.

  In this step, grinding is performed so that the thickness of the object to be ground is substantially equal to the design thickness D2 of the base substrate 10. Thereby, as shown in FIG. 17C, the metal member 14 (14a, 14b) and the insulating layer 15 having a desired thickness can be formed. In addition, since the base substrate 10 (base substrate 10) having the flat first surface 12 and the second surface 13 can be manufactured, the bonding reliability with the lid 30 can be improved.

[Wiring pattern formation (S29)]
Next, as shown in FIG. 17D, wiring patterns 17 (17 a, 17 b, 17 c, 17 d) connected to the metal member 14 are formed on the first surface 12 and the second surface 13. A known film forming technique can be used for the step of forming the wiring pattern 17. The wiring pattern 17 may be formed by, for example, screen printing, an inkjet method, a CVD method, or the like.

  As shown in FIG. 17D, from the above steps, a plurality of base substrates 10 are formed in the plurality of first regions A ′, and an insulating layer is formed in the second region B ′ surrounding the first region A ′. 15c is formed. Here, the insulating layer 15c in the second region B ′ that is a cutting region may be removed by cutting, and the base substrate 10 may be separated into pieces. The plate-like member that is continuous with the insulating layer 15c may be referred to as a substrate 2.

2.3 Manufacture of vibrating devices (S1 to S6)
Next, the vibration device manufacturing process (S1 to S6) will be described with reference to FIGS. 5, 6, 18, and 19. FIG. In the following description, as an example of the manufacturing method of the vibrating device according to the present embodiment, first, the manufacturing method of the vibrating device 100 according to the first embodiment will be described, and then the vibrating device 101 and the third embodiment according to the second embodiment will be described. A method for manufacturing the vibrating device 200 will be described.

2.3.1 Manufacturing Method of Vibration Device 100 [Preparation of Base Substrate / Cover Body (S1)]
As shown in FIG. 5, the process of preparing the base substrate 10 and the lid 30 in the manufacturing process of the vibrating device 100 according to the present embodiment is as described above.

  In the step of preparing the base substrate 10, as shown in FIG. 18A, a plate-like substrate 2 in which a plurality of base substrates 10 are continuous with an insulating layer 15c may be prepared. Although not shown, the base substrate 10 cut at the insulating layer 15c and separated into pieces may be prepared. Preferably, in this step, by preparing the substrate 2 as the base substrate 10, the handling of the plurality of base substrates 10 is improved, and the commercial productivity is improved.

[Vibration piece / IC chip mounting (S2)]
Next, as shown in FIG. 5, the resonator element 70 and the IC chip 80 are mounted (electrically connected and fixed). In this step, the order of mounting (die attaching) the resonator element 70 and the IC chip 80 is not particularly limited. For example, as shown in FIGS. 18B and 18C, after the IC chip 80 is mounted on the wiring pattern 17 (17a, 17b), the vibrating piece 70 may be mounted on the wiring pattern 17a. Thereby, the vibration piece 70 and the nine integrated circuits of the IC chip 80 are electrically connected. Further, the vibrating piece 70 may be held so as to be a cantilever, for example.

  Further, as shown in FIG. 18C, the resonator element 70 and the IC chip 80 may be mounted on the plurality of base substrates 10 of the substrate 2, respectively.

[Frequency adjustment (S3)]
Next, as shown in FIG. 5, the frequency of the vibrating piece 70 is adjusted. The frequency adjustment method is not particularly limited. For example, a part of the electrode of the vibrating piece 70 may be removed by leather trimming to reduce the mass, or the mass may be added by vapor deposition or sputtering. Alternatively, the frequency adjustment may be performed by rewriting data of the IC chip 80.

[Sealing (S4)]
Next, the sealing process (S4) of the manufacturing method of the vibration device according to the present embodiment is performed. In this step, as shown in FIG. 6, the lid 30 is mounted on the base substrate 10 via the adhesive layer 25 and the vibrating piece 70 is accommodated in the cavity 1 (S 4-1), and the recess 26 is interposed. A step (S4-2) of degassing the inside of the cavity 1 and a heat treatment step (S4-3) for melting the adhesive layer 25 and closing the recess 26.

  First, in the lid 30 mounting step (S4-1), as shown in FIG. 19A, the lid 30 is mounted on the base substrate 10 so as to cover the vibrating piece 70 and the IC chip 80, and the vibrating piece 70 and The IC chip 80 is sealed in the space in the cavity 1. Here, heat treatment may be performed so that the surface of the adhesive layer 25 is partially melted, and the lid 30 may be partially bonded to the base substrate 10.

  Next, as shown in FIG. 19A, the inside of the cavity 1 is deaerated through the recess 26 (A4-2). Thereby, the inside of the cavity 1 is in a vacuum or a reduced pressure state.

  Next, as shown in FIG. 19B, a heat treatment step (S4-3) for melting the adhesive layer 25 and closing the recess 26 is performed. Since the adhesive layer 25 is composed of a brazing material such as Sn or Au, the adhesive layer 25 is melted by performing a heat treatment up to the melting point of the material. Therefore, the concave portion 26 can be blocked and disappeared by the molten adhesive layer 25. By this step, as shown in FIG. 19B, the adhesive layer 20 that joins the lid 30 and the base substrate 10 without forming the recess 26 is formed, and the cavity 1 is sealed.

[Individualization (S5)]
Next, as shown in FIG. 19C, dicing along the second region B ′ makes it possible to singulate a plurality of vibrating devices 100 formed on the substrate 2.

[Characteristic inspection (S6)]
The manufacturing method of the singulated vibration device 100 may include a step of inspecting characteristics such as electrical characteristics.

  The manufacturing method of the vibration device 100 according to the present embodiment can be configured by the above steps.

  The method for manufacturing the vibration device 100 according to the present embodiment has the following features, for example.

  According to the manufacturing method of the vibrating device 100 according to the present embodiment, the deaeration process in the sealing process in the manufacturing process of the vibrating device is performed on the adhesive layer 25 instead of the through holes formed in the base substrate 10 and the lid 30. This can be done through the formed recess 26. Therefore, it is not necessary to provide a through hole in the base substrate 10 or the lid body 30, and the manufacturing process is simplified. In addition, since it is not necessary to consider the space for the through hole when designing the layout of the vibration device 100, the vibration device can be downsized. In addition, since the sealing process can be performed without using the Au / Ge balls that have been required so far, the material cost of the vibration device can be reduced.

  From the above, it is possible to provide a method for manufacturing a vibration device that contributes to the demands for downsizing / miniaturization of vibration devices and commercial production and that can further simplify the manufacturing process.

2.3.2 Manufacturing Method of Vibration Device 101 Next, a manufacturing method of the vibration device 101 according to the second embodiment will be described. The manufacturing method of the vibration device 101 according to the first modified example manufactures the vibration device 101 by preparing the lid body 130 in the base substrate / lid body preparation step (S1) of the manufacturing method of the vibration device 100. (See FIGS. 9 and 10).

2.3.3 Method of Manufacturing Vibration Device 200 FIG. 20 is a diagram schematically illustrating an example of a method of manufacturing the vibration device 200 according to the second modification. In the following description, a case where the base substrate 230 of the vibration device 200 is ceramic will be described.

  First, as shown in FIG. 20A, a base substrate 211 in a ceramic green sheet state is prepared. As shown in FIG. 20A, the base substrate 211 is not formed with a deaeration through hole or the like.

  Next, as shown in FIG. 20A, wiring patterns 17 are formed on both surfaces of the base substrate 211. This step may be performed, for example, by applying a conductive paste as an ink using a printing method such as screen printing or an ink jet method and baking it (metal metallization). Moreover, you may perform this process by general film-forming and patterning.

  Next, as illustrated in FIG. 20B, a wall portion 212 having an opening 216 is stacked over the base substrate 211. The wall 212 may be a ceramic green sheet. By laminating the base substrate 211 and the wall portion 212 and then firing, an integrated ceramic base substrate 210 can be formed as shown in FIG.

  Next, as shown in FIG. 20C, the resonator element 70 and the like are accommodated in the base substrate 210 from the opening 216, and the plate-like lid 230 is mounted. An adhesive layer 25 in which a recess 26 is formed is provided at a portion where the lid 230 is joined to the base substrate 210. Thereby, the sealing process in the cavity 1 can be performed through the recess 26.

  Next, as shown in FIG. 20D, a heat treatment step is performed in which the adhesive layer 25 is melted to close the recess 26. By this step, as shown in FIG. 20D, the adhesive layer 20 that does not have the recess 26 and joins the lid 30 and the base substrate 10 is formed, and the cavity 1 is sealed.

  The vibration device 200 according to the third embodiment can be manufactured through the above steps.

3. Next, an electronic apparatus 1000 to which the vibration device 100 (101, 200) to which the method for manufacturing a vibration device according to the invention is applied will be described. The electronic apparatus 1000 to which the vibration device 100 (101, 200) according to the present invention is applied is, for example, a mobile phone, an automobile, a digital camera, a projector, a mobile phone base station, a digital TV, a digital video camera, a watch, a portable digital. An electronic device such as a music player, PDA, personal computer, or printer may be used. For example, as shown in FIG. 21, when the electronic apparatus 1000 is a mobile phone, the vibration device 100 according to the present invention can be used as a temperature-compensated crystal oscillator of a radio circuit or a GPS circuit. Further, the vibration device 100 (101, 200) according to the present invention can be used for motion sensing such as a camera shake detection function. In addition, the vibration device 100 according to the present invention can be used as a voltage-compensated crystal oscillator for receiving one-segment broadcasting.

  As described above, the embodiments of the present invention have been described in detail. However, those skilled in the art can easily understand that many modifications can be made without departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention.

1 cavity, 2 substrates, 10, 210, 211 base substrate, 12 first surface,
13 Second surface, 14 Metal member, 15 Insulating layer, 17 Wiring pattern,
20 adhesive layer, 21 inner surface, 22 outer surface, 25 adhesive layer, 26 recess,
30, 130, 230 lid, 31 inner surface, 32 outer surface, 33 joint surface, 36 opening,
50 (50a, 50b) resist pattern, 51a first resist pattern,
52a second resist pattern, 70 vibrating piece, 71 vibrating rod, 72 base,
76 support member, 80 IC chip, 81 brazing material,
100, 101, 200 Vibration device, 1000 Electronic equipment.

Claims (8)

A step of preparing a lid provided with a base substrate and a portion to be bonded to the base substrate with an adhesive layer having a recess;
Mounting a resonator element on the base substrate;
Bonding the lid to the base substrate via the adhesive layer so that the vibrating piece is accommodated in the cavity;
Degassing the cavity through the recess;
Melting the adhesive layer and closing the recess;
A method for manufacturing a vibrating device. In claim 1,
The step of preparing the lid includes
Providing a first metal substrate having a first surface;
Forming a conductive layer made of the same material as the adhesive layer on the first surface of the first metal substrate;
Etching the first metal substrate and the conductive layer;
Forming the recesses in the patterned conductive layer;
A method for manufacturing a vibrating device. In claim 2,
The step of preparing the lid includes forming a plurality of lids from the first metal substrate. In claim 2,
The process of forming the said recessed part is a manufacturing method of a vibration device including the process of cutting the said conductive layer. In any one of Claims 1-4,
The method for manufacturing a vibration device, wherein an outline of an outer shape of a portion of the lid that is joined to the base substrate is rectangular, and the recess is formed symmetrically with respect to a center point of the rectangle. In claim 5,
The said recessed part is a manufacturing method of the vibration device formed in the four corners of the said part. In any one of Claim 1 to 6,
The step of preparing the base substrate includes:
Preparing a second metal substrate having a first surface and a second surface opposite to the first surface;
Etching the second metal substrate from the first surface side to form a plurality of metal protrusions;
Forming an insulating layer on the first surface side so as to cover a plurality of the metal protrusions;
Etching the second metal substrate from the second surface side so that the plurality of metal protrusions are independent from each other, and forming a plurality of metal members made of the metal protrusions;
Grinding the insulating layer such that the plurality of metal members are exposed from the insulating layer;
Forming a wiring pattern connected to the metal member;
A method for manufacturing a vibrating device. In any one of Claims 1-7,
In the step of mounting the resonator element, the plurality of resonator elements are respectively mounted on a substrate including the plurality of base substrates.
In the step of bonding the lid body to the base substrate, the plurality of vibrating pieces are respectively accommodated by the plurality of lid bodies,
The method for manufacturing a vibration device, further comprising a step of cutting the substrate after the step of closing the recess.

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