JP2012234947A - Resin package for semiconductor light-emitting device, semiconductor light-emitting device having the resin package and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for a semiconductor light-emitting device, which is superior in heat/light resistance, has a high reflectance ratio in a wide wavelength range even though having a thin wall, and further is superior in formability, heat radiation properties and mass productivity.SOLUTION: The resin package for the semiconductor light-emitting device comprises: a first lead; a second lead; and a resin mold integrally molded with the first lead and the second lead. The resin package has a recess part having a bottom face and a side face formed therein. The first lead and the second lead are exposed from the bottom face of the recess part. The resin package has a base for mounting the semiconductor light-emitting device thereon. The resin mold comprises a composition containing: (A) polyorganosiloxane; (B) white pigment of which a primary particle has an aspect ratio of 1.2 or more and 4.0 or less and a particle diameter of 0.1 μm or more and 2.0 μm or less; and (C) a curing catalyst.

Description

  The present invention relates to a semiconductor light-emitting device used for lighting fixtures, displays, backlights for mobile phones, liquid crystal televisions, etc., digital signage and other light sources, a resin package for semiconductor light-emitting devices suitable therefor, and a method for manufacturing the same.

  A surface-mounted light-emitting device using a light-emitting element is small in size, has high power efficiency, and has a bright emission color. In addition, since this light emitting element is a semiconductor element, there is no fear of a broken ball. Furthermore, it has excellent initial drive characteristics and is strong against repeated on / off of vibration and lighting. Because of such excellent characteristics, light-emitting devices using light-emitting elements such as light-emitting diodes (LEDs) and laser diodes (LDs) are used as various light sources.

Such a semiconductor light-emitting device includes a light-emitting element electrically connected to a lead mounted on a package for a semiconductor light-emitting device having a resin molded body in which a lead and a resin composition are integrally molded. A basic structure is a structure in which a light-emitting element is covered with a sealing material.
As a material of the resin molded body constituting the package, a thermoplastic resin composition in which a white pigment is blended as a reflective material for increasing the light reflection efficiency to a thermoplastic resin such as polyamide is widely used. In order to obtain an apparatus, the heat resistance sometimes becomes insufficient under reflow conditions using a high melting point lead-free solder for avoiding the use of lead in recent years.
Therefore, it has been proposed to use a thermosetting resin such as an epoxy resin or a silicone resin excellent in heat resistance instead of the thermoplastic resin for the package (see Patent Document 1). Further, Patent Document 1 discloses a method for manufacturing a resin-molded body excellent in mass productivity and a surface-mounted light-emitting device, in which a base on which a light-emitting element is placed by a transfer molding method, a lead, and a resin are integrally molded. Have been described.
Patent Document 2 discloses a package having excellent heat dissipation, in which a lead frame supporting a base and the above-described thermosetting resin composition or thermoplastic resin composition are integrally formed by injection molding.
However, further improvements are required in terms of heat resistance, light resistance, adhesion and mass productivity of the resin used in the semiconductor light emitting device package, and leads and resin molded bodies constituting the semiconductor light emitting device package Further improvements have also been demanded for the structure of and the molding method adapted to that structure.

JP 2007-329219 A Special table 2009-543329

Conventionally, the injection molding method using thermoplastic resin has the advantage of good productivity, but when this is applied to the package for semiconductor light emitting device, the resin is highly viscous and as a reflective material When a white pigment is blended, the viscosity of the composition is further increased and the fluidity is lowered, so that the amount of white pigment added cannot be increased too much.
In addition, the thermoplastic resin conventionally used in this application contains a large amount of aromatic components that have ultraviolet absorption and inferior heat resistance and light resistance in order to ensure a high glass transition temperature (Tg), and therefore the refractive index becomes high, and therefore should be used. The white pigments that can be produced are also limited to titania and the like that have a large refractive index difference from the binder resin and can obtain a high reflectance when added in a small amount. Although titania has a high reflectance in a small amount in the visible light region, it has a low reflectance in the blue to ultraviolet region due to absorption in the ultraviolet region. As a result, only the composition represented by “aromatic group-containing resin + titania” can be selected for use in injection molding, and as a result, only a package with low heat resistance and light resistance and low reflectance can be obtained. It was.

On the other hand, in the transfer molding method disclosed in Patent Document 1, since a solid raw material composition is used at room temperature, a thermosetting resin composition containing many polar groups and rigid organic groups without using an aromatic component. Or a semi-cured epoxy compound can be used. However, since the obtained cured product is a resin mainly composed of an organic skeleton, the heat resistance is not sufficient. Moreover, since the refractive index of these thermosetting resins is also high, it is difficult to obtain a package having a high reflectance in a wide wavelength range because only a composition mainly using titania can be selected as a reflecting material. In addition, transfer molding has a longer molding cycle than injection molding, is not suitable for mass production, and has a problem in the degree of freedom in selecting the shape of a molded product. Furthermore, in order to manufacture a large number of pieces in one shot, there is a problem in terms of capital investment, such as requiring an expensive dicer.
Also in the package of Patent Document 2, the resin itself is the same as the conventional one, and it cannot be said that the same problems as described above due to the properties of the resin main body have been solved.

  The present invention solves the above-mentioned problems of the prior art, has excellent heat resistance and light resistance, has a high reflectance even when thin in a wide wavelength range, and has excellent moldability, heat dissipation, and mass productivity. An object of the present invention is to provide a semiconductor light emitting device including the package and a method of manufacturing the same.

  As a result of intensive studies to solve the above problems, the present inventor has found that the following inventions meet the above object, and have reached the present invention.

A semiconductor light emitting device package according to the present invention includes a semiconductor light emitting device including a first lead, a second lead, and a resin molded body formed integrally with the first lead and the second lead. A resin package for the device,
The resin package is formed with a recess having a bottom surface and a side surface, and the first lead and the second lead are exposed from the bottom surface of the recess, and the resin package mounts the semiconductor light emitting element. Has a base of
And the resin molded body comprises (A) polyorganosiloxane, (B) a white pigment having an aspect ratio of primary particles of 1.2 to 4.0, a primary particle diameter of 0.1 to 2.0 μm, and ( C) It is formed from the composition containing a curing catalyst.

In the present invention, the “resin molded product” refers to a product obtained by molding a resin composition for a semiconductor light-emitting device, and may be referred to as “semiconductor light-emitting device package” (hereinafter simply referred to as “package”). ) Is obtained by integrally molding a lead, which is a conductive metal, and a resin composition for a semiconductor light emitting device, which is a raw material of a resin molded body.
The “semiconductor light-emitting device” refers to the package for a semiconductor light-emitting device, a semiconductor light-emitting element (hereinafter sometimes simply referred to as “light-emitting element”), a sealing material that covers the semiconductor light-emitting element, and the like. A light emitting device.
Further, in the present invention, the “lead” is formed into a so-called “lead wire”, that is, a so-called “lead frame” in addition to the conductive wiring, and is formed into any other shape such as a plate used for electrical connection. It also includes a conductor.

The “inner lead portion” refers to a portion of the lead that is installed inside the resin molded body. At least a part of the inner lead portion is exposed from the bottom surface of the concave portion of the resin molded body, and is electrically connected to the electrode of the light emitting element at the exposed portion.
The “outer lead portion” is exposed to the outside from the surface (hereinafter also referred to as “back surface”) opposite to the surface (hereinafter also referred to as “main surface”) on which the concave portion of the resin molded body is formed. The lead part is used for improving heat dissipation efficiency and electrical connection with external electrodes, and it can be mounted on lighting fixtures as it is by bending this outer lead part to a predetermined length. Become.

The package for a semiconductor light-emitting device of the present invention is excellent in moldability, heat resistance, light resistance, adhesion, reflectivity, and the like by using the thermosetting silicone resin composition in the resin molded body portion. In addition, a structure in which the light emitting element can be easily placed can be obtained.
In addition, since the semiconductor light emitting element is mounted on the base, the resin package can efficiently dissipate heat generated from the semiconductor light emitting element to the outside by selecting the material of the base. By providing a rigid base directly under the light-emitting element, when the semiconductor light-emitting element is wire-bonded by the ultrasonic thermocompression bonding (thermosonic) method, the ultrasonic wave is less absorbed by the resin molding, and the semiconductor Since the adhesive strength between the electrode of the light emitting element and the binding wire is increased, the stability during mounting is also improved.
Further, the resin package has a recess having a bottom surface and a side surface, and the first lead and the second lead are exposed from the bottom surface of the recess. It can dissipate heat well.

  The details of (A) polyorganosiloxane, (B) white pigment, and (C) curing catalyst contained in the thermosetting silicone resin composition forming the resin molding are described in the description of the embodiment. .

The center particle size of the secondary particles of the (B) white pigment is preferably 0.02 μm or more and 5 μm or less. By using such a white pigment (B), a resin composition is obtained which has excellent reflection characteristics and moldability during liquid injection molding, is easily adjusted to a viscosity suitable for molding, and has little mold wear. be able to.
Further, in order to obtain a package for a semiconductor light emitting device having more excellent reflection characteristics, it is preferable that the (B) white pigment is alumina and / or titania.

Various substances can be added to the composition forming the resin molded body according to the performance required for the resin molded body.
Among them, the composition forming the resin molded body contains at least one material selected from the group consisting of a filler, a diffusing agent, a fluorescent material, a reflective material, a light shielding material, an ultraviolet absorber, and an antioxidant. A composition is preferred.

  The resin package is preferably formed by a liquid injection molding (LIM) method. Molding by liquid injection molding (LIM) method is suitable for mass production because it can be continuously molded, does not generate useless cured products, and does not require secondary processing (ie, hardly generates burrs), and is a resin There are significant advantages such as automation of the molding process of the molded body, shortening of the molding cycle, and cost reduction of the molded product. Comparing LIM molding and transfer molding, LIM molding has the advantage that the degree of freedom of the shape of the molded body is high, and the molding machine and mold price per unit production amount are relatively low.

  It is preferable that the side end portion of the resin package recess for the semiconductor light emitting device does not have a ridge corner. With such a structure, the cured molded body can be easily detached from the mold.

  Moreover, it is preferable that the bottom surface of the base is exposed from the resin package for a semiconductor light emitting device.

  In the semiconductor light emitting device of the present invention, a semiconductor light emitting element is mounted on the base of the resin package for the semiconductor light emitting apparatus, the light emitting element is electrically connected to the first and second leads, and the light emission The element is sealed with a resin layer made of a composition containing at least one resin selected from the group consisting of epoxy resin, modified epoxy resin, silicone resin, modified silicone resin, acrylate resin, polyamide resin, and urethane resin as a main component. It is characterized by being.

  The resin layer is preferably formed from a composition containing at least one material selected from the group consisting of a filler, a diffusing agent, a fluorescent material, a reflective material, an ultraviolet absorber, and an antioxidant.

  Moreover, it is preferable that a protective element is placed on the first lead or the second lead.

A method of manufacturing a resin package for a semiconductor light emitting device according to the present invention includes: a liquid injection molding having a base formed by integrally molding a first lead and a second lead and having a recess having a bottom surface and a side surface. A method of manufacturing a resin package for a semiconductor light emitting device by the method,
The upper die and / or the lower die form a recess corresponding to the shape of the resin package, and the first lead electrode has a first inner lead portion and a first outer lead portion. The second lead electrode has a second inner lead portion and a second outer lead portion, and the first inner lead portion, the second inner lead portion corresponding to the bottom surface of the concave portion of the resin package, and A first step of sandwiching the first outer lead portion and the second outer lead portion between the upper mold and the lower mold;
In the space formed by the depressions of the upper mold and the lower mold, (A) polyorganosiloxane, (B) the primary particles have an aspect ratio of 1.2 to 4.0, and the primary particle diameter is 0.1 μm. A second step of injecting and filling a liquid thermosetting resin composition containing a white pigment of 2.0 μm or less and (C) a curing catalyst;
And at least a third step of forming a resin package by heating and curing the filled thermosetting resin, and the base is any one of the following (i) and (ii) It is formed.
(I) A method in which, in the first step, a base is inserted into the mold in addition to the first lead and the second lead, and is integrally formed. (Ii) The upper mold and / or the lower mold A method in which the mold further has a convex portion corresponding to the shape of the base, and the base is inserted into the hollow portion of the molded body formed thereby after the third step.

Thereby, flapping of the lead in the second and third steps of injection molding the liquid thermosetting silicone resin composition can be suppressed, and a resin molded body free from burrs can be manufactured.
Further, since the resin molded body is formed by the liquid injection molding method, it is possible to manufacture a resin molded body having a concave portion with a complicated shape, and furthermore, since continuous molding is possible, it is suitable for mass production, Therefore, there is an advantage that secondary processing is unnecessary, and it is possible to automate the molding process of the resin molded body, shorten the molding cycle, and reduce the cost of the molded product.
Moreover, the 1st inner lead part corresponded to the part which mounts a light emitting element can be exposed, and heat dissipation can be improved by exposing a lead to the bottom face of a recessed part.

In the production method of the present invention, the second step is preferably performed using a liquid injection molding machine, and the injection molding pressure is preferably 10 kg / cm ² or more and 1200 kg / cm ² or less, more preferably 100 kg / cm ^2. It is from cm ^{2 to} 2000 kg / cm ² , more preferably from 200 kg / cm ^{2 to} 1600 kg / cm ² , and particularly preferably from 370 kg / cm ^{2 to} 1200 kg / cm ² .

  In the production method of the present invention, the second step is preferably performed using a liquid injection molding machine, and the cylinder temperature of the liquid injection molding machine is preferably 0 ° C. or higher and 100 ° C. or lower.

  The curing temperature and time during liquid injection molding are preferably 120 ° C. or higher and 230 ° C. or lower and 3 seconds or longer and 10 minutes or shorter, respectively.

  (A) polyorganosiloxane used for liquid injection molding, (B) a white pigment having an aspect ratio of primary particles of 1.2 to 4.0, a primary particle diameter of 0.1 to 2.0 μm, and ( C) The viscosity of the liquid thermosetting resin composition containing the curing catalyst is preferably 10 Pa · s or more and 10,000 Pa · s or less under the conditions of 25 ° C. and a shear rate of 100 / s.

A manufacturing method of a semiconductor light emitting device of the present invention is a manufacturing method of a semiconductor light emitting device using the above resin package,
A semiconductor light emitting element is mounted on the base of the resin package, the first electrode of the light emitting element and the first inner lead are electrically connected, and the second electrode of the light emitting element and the second electrode A first step of electrically connecting the inner lead;
A second step of charging the concave portion of the resin package with a composition containing at least one resin selected from the group consisting of an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin and an acrylate resin as a main component; ,
A third step of heating and curing the composition to seal the light emitting element;
It is characterized by having.

  In the method for manufacturing a semiconductor light emitting device of the present invention, it is preferable that a step of placing a protective element on the first lead or the second lead is included before or after the first step.

  ADVANTAGE OF THE INVENTION According to this invention, durability (light resistance, heat resistance) is high, the package for semiconductor light-emitting devices which can improve LED output with the outstanding reflectance, and a semiconductor light-emitting device provided with the package are provided. The

It is a schematic sectional drawing which shows an example of the semiconductor light-emitting device concerning embodiment of this invention. It is a schematic plan view which shows an example of the semiconductor light-emitting device concerning embodiment of this invention. It is a schematic sectional drawing which shows the semiconductor light-emitting device concerning other embodiment of this invention. It is a schematic sectional drawing which shows the semiconductor light-emitting device concerning other embodiment of this invention. It is a schematic sectional drawing which shows the semiconductor light-emitting device concerning other embodiment of this invention. It is a schematic sectional drawing which shows the semiconductor light-emitting device concerning other embodiment of this invention. It is a schematic sectional drawing which shows the semiconductor light-emitting device concerning other embodiment of this invention. It is a schematic plan view which shows the semiconductor light-emitting device concerning other embodiment of this invention. FIG. 3 is a schematic cross-sectional view showing a manufacturing process of the semiconductor light emitting device according to the embodiment of FIGS. 1 and 2. It is a graph which shows the measurement result of the reflectance of each test piece in the present invention. 3 is a graph showing measurement results of the viscosity of a resin molded body material in Example 1. FIG.

  Hereinafter, a resin package for a semiconductor light-emitting device, a semiconductor light-emitting device, and a manufacturing method thereof according to the present invention will be described with reference to embodiments and examples.

<1. Overview of Semiconductor Light Emitting Device>
An outline of the semiconductor light emitting device will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor light emitting device. FIG. 2 is a schematic plan view thereof. FIG. 1 is a schematic cross-sectional view taken along the line AA in FIG.

  The semiconductor light emitting device 1 in FIG. 1 includes a (resin) package 10, a light emitting element 20 placed on the package 10, and a sealing material 30 that covers the light emitting element 20.

  The package 10 is formed by integrally molding a base 10a, a first lead 11 and a second lead 12, and a resin molded body 13 for a semiconductor light emitting device.

The light emitting element 20 has a pair of positive and negative first electrodes 21 and second electrodes 22 on the same surface side, and each electrode is electrically connected to the first lead 11 and the second lead 12. It is connected.
The semiconductor light emitting device 1 of FIG. 1 will be described as having a pair of positive and negative electrodes on the same surface side. A submount having a conductive surface is provided between the light emitting element and the base, It is also possible to use one having a pair of positive and negative electrodes from the upper surface and the lower surface of the light emitting element by wire-bonding one lead or wire-bonding a metal base and the first lead. it can.

The sealing material 30 is inserted into the recess 14 of the package 10 so as to cover the light emitting element 20.
The sealing material 30 uses a thermosetting resin or a composition containing a thermosetting resin as a main component (hereinafter collectively referred to as “thermosetting resin composition for sealing material”), and the light emitting element 20. In the case of directly using the light, transparent sealing is performed. However, in the case where the light of the light emitting element 20 is converted into an arbitrary wavelength, a phosphor is usually contained.

Hereinafter, each component of the semiconductor light emitting device will be described in detail.
<2. Package for Semiconductor Light Emitting Device>
<2.1. Package Overview>
As described above, the semiconductor light emitting device package 10 includes the base 10 a, the first lead 11 and the second lead 12, and the resin molded body 13.

  The first lead 11 has a first inner lead portion 11a and a first outer lead portion 11b. A portion of the first inner lead portion 11 a is exposed from the bottom surface 14 a of the recess 14, and is electrically connected to the first electrode 21 of the light emitting element 20 via the wire 40. The first lead 11 has a first outer lead portion 11b exposed outside the side surface of the resin molded body 13, and the first outer lead portion 11b is electrically connected to an external electrode (not shown). Connected. Therefore, a conductive member such as metal is used as the material.

  The second lead 12 has a second inner lead portion 12a and a second outer lead portion 12b. A part of the second inner lead portion 12 a is exposed from the bottom surface 14 a of the recess 14, and is electrically connected to the second electrode 22 of the light emitting element 20 via the wire 40. The second lead 12 has a second outer lead portion 12b exposed to the outside of the side surface of the resin molded body 13, and the second outer lead portion 12b is electrically connected to an external electrode (not shown). In order to be connected, a conductive member such as metal is used as the material.

In order to prevent the base 10a from being short-circuited with the first lead 11 and the second lead 12, a portion of the base 10a adjacent to the first lead 11 and the second lead 12 on the back surface side. Insulators 50a and 50b are provided on the surface.
Further, the back surfaces of the first inner lead part 11a and the second inner lead part 12a may not be exposed and may be covered with a resin composition for a resin molded body that is a part of the package and integrally molded.

The package 10 has a recess 14 including a bottom surface 14a and a side surface 14b.
As shown in FIGS. 1 and 2, the bottom surface 14 a includes the top surface of the base 10 a, a part of each of the first inner lead portion 11 a and the second inner lead portion 12 a, and the connecting portions 13 a and 13 b of the resin molded body 13. Further, the side surface 14b is formed of a wall surface of an open communication hole formed in the resin molded body 13.
In addition, it is preferable that the opening part of the recessed part 14 has a wide opening rather than the bottom face 14a, and the side surface 14b formed with the resin molding 13 is inclined.

The recess 14 is inclined so as to have a wide opening in the opening direction. Thereby, the light extraction efficiency in the opening direction can be improved. However, it is possible to form a cylindrical recess without providing an inclination. Further, the inclined surface is preferably smooth, but irregularities can be provided. By providing the unevenness, the adhesion at the interface between the resin molded body 13 and the sealing material 30 can be improved. The inclination angle of the recess 14 is preferably 95 ° or more and 150 ° or less from the bottom surface, and particularly preferably 100 ° or more and 120 ° or less.
Moreover, it is preferable that the terminal part of the side surface 14b does not have a ridge corner part. By setting it as such a structure, peeling (demolding) from the metal mold | die of the molded article after hardening becomes easy.

  The shape of the main surface side of the package 10 is a rectangle, but may be an ellipse, a circle, a pentagon, a hexagon, or the like. The shape of the main surface side of the recess 14 is a circle to an ellipse, but may be a rectangle, a pentagon, a hexagon, or the like. You may attach a cathode mark as needed.

  Hereinafter, each component of the package 10 will be described in detail.

<2.2. Base>
The base 10 a is a base for placing the light emitting element 20 on the package 10. The light emitting element 20 is usually placed on the base 10a via a die bond member.
The base 10a may be integrally formed by being inserted into the mold together with the lead when molding the resin molded body, and the base is inserted when integrally molding the resin molded body and the lead. The base 10a may be separately fitted into the cavity after molding so that the place to be formed is hollow.
As examples of the former base, the base 10a is formed of the same material as the lead as a part of the lead, the base of another material is supported by the lead, the through hole of the wiring board ( Examples thereof include those in which a base 10a is formed by embedding a heat conductive paste in a through-hole). Examples of the latter include a metal base that has been formed into pieces by precision casting.
After the base 10a is coupled and fixed to the support portion provided on the lead and then integrally formed by insert molding, the positional relationship between the lead and the base is compared with the case where each is individually inserted and insert molded. It can be kept stable. In addition, it is possible to prevent the base from being detached from the package as compared with the case where the base is inserted into the cavity later.
Furthermore, an increase in the separation distance between the lead and the base can be prevented while using the base support portion, and an increase in the size of the package can be prevented.
When the base 10a is a conductive member such as a metal and the light emitting element is a vertical conduction type, the lower part of the light emitting element and the base 10a are electrically connected using a die bond member having electrical conductivity. The base 10a may be wire-bonded with the first lead.
The base 10a is preferably exposed from the recess 14 of the resin molded body 13, but may be buried. Further, the base 10a only needs to be able to mount the light emitting element 20, and is preferably configured using a good electrical conductor such as iron, phosphor bronze, or copper alloy. However, the base 10a is made of an insulator such as high thermal conductive ceramic, silver, or high heat. A cured product of a heat conductive paste in which a powder of conductive ceramics or the like is dispersed in a resin base material can also be used.
Moreover, in order to improve the reflectance of the light from the light emitting element 20, metal plating, such as silver, aluminum, copper, and gold | metal | money, can also be given to the surface of the base 10a.
Moreover, in order to improve the reflectance of the surface of the base 10a, it is preferable to make it smooth. Moreover, in order to improve heat dissipation, the area of the base 10a can be enlarged. Thereby, the temperature rise of the light emitting element 20 can be effectively suppressed, and a relatively large amount of electricity can be passed through the light emitting element 20. Moreover, heat dissipation can be improved by making the base 10a thick.
Moreover, by making the base 10a thick, the deflection of the base 10a is reduced, and the light emitting element 20 can be easily mounted. On the contrary, the semiconductor light-emitting device 1 can be made thin by making the base 10a into a thin flat plate shape. The shape of the base 10a is not particularly limited, and may be a flat cylindrical shape, a substantially rectangular parallelepiped shape, a substantially cubic shape, or the like, and a recess may be formed on the surface on which the light emitting element is placed. Further, in order to prevent the base from being detached from the resin molded body, the surface on which the resin molded body and the base are fitted may have an uneven shape or a taper.
In addition, when the reflectance of the resin composition which comprises the resin molding 13 is higher than the base 10a, and it is not necessary for the lower surface of a light emitting element to contact | connect the base 10a directly with insulators, such as a sapphire substrate, reflection efficiency is improved. In order to give priority, the base 10a may be covered with the resin composition having a high reflectance, and the light emitting element 20 may be placed thereon.

<2.3. Lead>
The semiconductor light emitting device of the present invention usually has a first lead and a second lead as described above. The first lead and the second lead preferably have a larger area from the viewpoint of thermal conductivity and electrical conductivity.

The first inner lead portion 11a of the first lead 11 forms a part of the bottom surface 14a of the recess 14, and is separated from the base 10a by a connecting portion 13a (of a resin molded body) for a predetermined period. Yes. The second inner lead portion 12a of the second lead 12 forms a part of the bottom surface 14a of the recess 14 and is separated from the base 10a by a connecting portion 13b (of a resin molded body) for a predetermined period. Yes.
The main surface side of these inner lead parts 11a and 12a and the outer lead parts 11b and 12b are exposed from the resin molded body, respectively, and electrical connection from these parts is possible.
When the package 10 is surface-mounted on another wiring board, the base 10a and the leads 11 and 12 are exposed to the portion corresponding to the back surface of the package 10 to be electrically connected not only from the side surface but also from the back surface side. Can do.
In addition, in order to further increase the heat dissipation efficiency, portions corresponding to the back surfaces of the base 10a and the inner lead portions 11a and 12a can be exposed from the package 10. Similarly to the outer lead portions 11b and 12b, the back surface exposed portions of the inner lead portions 11a and 12a can be electrically connected.
In particular, it is preferable that the bottom surface of the base 10 a on which the light emitting element 20 is placed is exposed from the package 10 in order to increase the heat release from the light emitting element 20.

In the embodiment of FIGS. 1 and 2, the first lead 11 has a first inner lead portion 11a and a first outer lead portion 11b. The first inner lead portion 11 a is exposed from the bottom surface 14 a of the recess 14 and is electrically connected to the first electrode 21 of the light emitting element 20 via the wire 40. The exposed portion of the first inner lead portion 11a only needs to have an area that is electrically connected to the first electrode 21 of the light emitting element 20, and the other portion is made of a resin having higher reflectivity. May be coated.
On the other hand, as described above, the first outer lead portion 11 b is a portion exposed from the resin molded body 13. The first outer lead portion 11b is electrically connected to the external electrode and has a function of transferring heat.

  The second lead 12 has a second inner lead portion 12a and a second outer lead portion 12b. The second inner lead portion 12 a is exposed from the bottom surface 14 a of the recess 14 and is electrically connected to the second electrode 22 of the light emitting element 20 via the wire 40. It should be noted that the exposed portion of the second inner lead portion 12a is required to have an area electrically connected to the second electrode 22 of the light emitting element 20 as in the case of the first inner lead portion 11a. These portions may be covered with a resin having higher reflectivity.

Further, the first outer lead portion 11b and the second outer lead portion 12b on the back surface side are exposed from the resin molded body 13 and may be subjected to processing such as bending as necessary. The portion in contact with the substrate is substantially on the same plane. Thereby, the mounting stability of the semiconductor light emitting device can be improved.
Further, when solder reflow mounting is performed on another wiring board, in order to prevent short circuit between the base 10a and the back surface of the first lead and between the base 10a and the back surface of the second lead due to the solder, The electrically insulating insulators 50a and 50b can be thinly coated. The insulators 50a and 50b are resin or the like.

  The 1st lead 11 and the 2nd lead 12 can be constituted using electric good conductors, such as iron, phosphor bronze, and a copper alloy. Further, in order to improve the reflectance of light from the light emitting element 20, the surface of the first lead 11 and the second lead 12 can be subjected to metal plating such as silver, aluminum, copper or gold. Further, the surfaces of the first lead 11 and the second lead 12 are preferably smoothed in order to improve the reflectance. Further, the area of the first lead 11 and the second lead 12 can be increased in order to improve heat dissipation. Thereby, the temperature rise of the light emitting element 20 can be effectively suppressed, and a relatively large amount of electricity can be passed through the light emitting element 20. Moreover, heat dissipation can be improved by making the first lead 11 and the second lead 12 thick.

  It is preferable that the exposed portion on the back surface side of the first lead and the exposed portion on the back surface side of the second lead are substantially on the same plane. Thereby, the stability at the time of mounting of a semiconductor light-emitting device can be improved. In addition, since the exposed portion is on the same plane, the semiconductor light emitting device may be mounted and mounted on the external electrode on the flat plate using solder, and the mountability of the semiconductor light emitting device can be improved. Furthermore, molding with a mold becomes easier.

  Since the first lead 11 and the second lead 12 are positive and negative electrodes, at least one each is sufficient, but a plurality of them can be provided.

<2.4. Resin molded body (for semiconductor light emitting device)>
The resin molded body 13 is molded integrally with the first lead 11 and the second lead 12, and this and the base 10a constitute the package 10. In the cross section taken along the line AA in FIG. 2, the resin molded body 13 has a communication port having an opening having an equal diameter or a wide opening in the upper opening surface as compared with the bottom surface 14 a.
The resin molding 13 can be molded by a liquid injection molding (LIM) method. As the resin composition for the resin molded body 13, a thermosetting silicone resin composition described later is used.

The resin molded body used in the present invention preferably has a thermal conductivity of 0.4 W / (m · K) or more and 3.0 W / (m · K) or less, 0.6 W / (m · K). More preferably, it is 2.0 W / (m · K) or less. The thermal conductivity can be measured using, for example, Eye Phase Mobile (manufactured by Eye Phase).
For this evaluation, the curing condition for producing a molded body from the resin composition is 180 ° C. × 4 minutes.

  The thermosetting silicone resin composition will be described in detail below.

<3. Thermosetting silicone resin composition>
<3.1. Characteristics of thermosetting silicone resin composition>
<3.1.1. Composition of thermosetting silicone resin composition>
The thermosetting silicone resin composition that is the material of the resin molded body 13 is (A) polyorganosiloxane, (B) the primary particles have an aspect ratio of 1.2 or more and 4.0 or less, and the primary particle diameter is 0.1 μm or more. It contains a white pigment of 2.0 μm or less and (C) a curing catalyst.
The preferable composition of the thermosetting silicone resin composition for the resin molded body for a semiconductor light-emitting device used in the present invention for the components (A) to (C) is as follows.
The content of (A) polyorganosiloxane in the thermosetting silicone resin composition used in the present invention is not limited as long as it can be normally used as a material for a resin molded article, but is usually 15% by weight of the whole material. The content is 50% by weight or less, preferably 20% by weight or more and 40% by weight or less, more preferably 25% by weight or more and 35% by weight or less.
Further, the content of the white pigment (B) in the composition is not limited as long as it can be used as a material for a resin molded body, but for example, 30% by weight or more and 85% by weight or less of the entire composition. It is preferably 40% by weight or more and 80% by weight or less, more preferably 45% by weight or more and 70% by weight or less.

<3.1.2. Viscosity of thermosetting silicone resin composition>
The thermosetting silicone resin composition used in the present invention preferably has a viscosity of 10 Pa · s to 10,000 Pa · s at a shear rate of 100 s ⁻¹ at 25 ° C. The viscosity is more preferably 150 Pa · s or more and 1,000 Pa · s or less from the viewpoint of molding efficiency when molding a resin molded body for a semiconductor device.

In addition, from the viewpoint of thixotropy, the thermosetting silicone resin composition used in the present invention has a viscosity ratio (1 s at a shear rate of 1 s ⁻¹ at 25 ° C. to a viscosity at a shear rate of 100 s ⁻¹ at 25 ° C. preferably ^-1 / 100s ^-1) it is 15 or more, and particularly preferably 30 or more. On the other hand, the upper limit is more preferably 300 or less.

  In order to make a material with good moldability, it is necessary to provide the material with a certain level of thixotropy. However, by satisfying the above conditions, there are few burrs and short molds (unfilled). The material measurement time and molding cycle during molding can be shortened, the molding is easy to stabilize, and the material has high molding efficiency.

In particular, in LIM molding using a liquid resin material, burrs are likely to occur due to the material seeping out from the minute gaps of the mold, and usually a post-processing step for removing the burrs is required, while burrs are generated. If the gap between the molds is made small in order to suppress the problem, short mold (unfilled) is likely to occur. However, when the viscosity of the liquid thermosetting silicone resin composition is in the above range, The problem can be solved, and LIM molding of the resin molded body can be easily and efficiently performed.
If the viscosity at a shear rate of 100 s ^-1 is greater than 10,000 Pa · s, the resin flow is poor, so that filling of the mold becomes insufficient, or it takes time to supply the liquid resin composition when performing injection molding. Therefore, the molding efficiency tends to decrease, for example, the molding cycle becomes longer.
Further, if the viscosity is less than 10 Pa · s, the liquid resin composition leaks from the gap between the molds to generate burrs, or the injection pressure easily escapes into the gap between the molds, so that molding becomes difficult to stabilize. As a result, the molding efficiency tends to decrease. In particular, when the molded body is small, post-processing for removing burrs becomes difficult, so it is important for moldability to suppress the generation of burrs.

When the ratio of the viscosity at a shear rate of 1 s ⁻¹ at 25 ° C. to the viscosity at a shear rate of 100 s ⁻¹ at 25 ° C. is less than 15, that is, when the viscosity at the shear rate of 1 s ⁻¹ is relatively small, molding is performed. Molding is easy because the material can easily enter the gaps between the machine and the mold, causing burrs, dripping easily at the nozzle part, and the injection pressure is not easily transmitted to the material, making molding difficult to stabilize. Can be difficult to control. In LIM molding, resin leakage in the parting line of the sprue part tends to be a problem, but adjusting to the above viscosity range is also effective in suppressing resin leakage.
The viscosity at a shear rate of 100 s ⁻¹ and the viscosity at a shear rate of 1 s ⁻¹ at 25 ° C. are measured using, for example, an ARES-G2-strain-controlled rheometer (manufactured by TA Instruments Japan Co., Ltd.). Can be measured.

<3.2. Components of Thermosetting Silicone Resin Composition>
<(A) Polyorganosiloxane>
The polyorganosiloxane in the present invention refers to a polymer substance in which an organic group is added to a structure having a portion in which a silicon atom is bonded to another silicon atom through oxygen. Here, the polyorganosiloxane is preferably a liquid at normal temperature and pressure. This is because the material becomes easy to handle when molding the resin molded body for a semiconductor light emitting device. Polyorganosiloxane that is solid under normal temperature and normal pressure generally has a relatively high hardness as a cured product, but has low energy required for destruction and low toughness, light resistance and heat resistance are insufficient, This is because many products tend to discolor due to heat.

The polyorganosiloxane usually refers to an organic polymer having a siloxane bond as the main chain, and examples thereof include compounds represented by the following general composition formula (1) and mixtures thereof.
(R ¹ R ² R ³ SiO _1/2 ) _M (R ⁴ R ⁵ SiO _2/2 ) _D (R ⁶ SiO _3/2 ) _T (SiO _4/2 ) _Q (1)
Here, in the above formula (1), R ¹ to R ⁶ are independently selected from an organic functional group, a hydroxyl group, and a hydrogen atom. M, D, T, and Q are 0 or more and less than 1, and M + D + T + Q = 1.
The unit constituting the main polyorganosiloxane is monofunctional [R ₃ SiO _0.5 ] (triorganosyl hemioxane), bifunctional [R ₂ SiO] (diorganosiloxane), trifunctional [RSiO _1.5 ] (Organosilsesquioxane), tetrafunctional [SiO ₂ ] (silicate), and by changing the composition ratio of these four types of units, the difference in the properties of polyorganosiloxane appears, so the desired properties Is selected as appropriate so that polyorganosiloxane is synthesized.
The polyorganosiloxane of the structural units 1 to 3 functional type, be synthesized based on a series of organic silicon compounds called organochlorosilanes (general formula _{R n SiCl 4-n (n} = 1~3)) it can. For example, methylchlorosilane can be synthesized by directly reacting methyl chloride and silicon Si at a high temperature under a Cu catalyst, and silanes having an organic group such as a vinyl group can be synthesized by a general synthetic organic chemistry method. can do.
Silanol is produced when the isolated organochlorosilane is mixed alone or in an arbitrary ratio and hydrolyzed with water. When this silanol is dehydrated and condensed, polyorganosiloxane, which is the basic skeleton of silicone, is synthesized. .

Polyorganosiloxane can be cured by applying heat energy, light energy, or the like in the presence of a curing catalyst. Here, curing refers to changing from a state showing fluidity to a state showing no fluidity. For example, even if the object is left at an angle of 45 degrees from the horizontal for 30 minutes, it is fluid. The state is referred to as an uncured state, and a state having no fluidity can be determined as a cured state. Further, when the object does not exhibit fluidity due to a large filler filling amount, the object is not plastically deformed, and the hardness can be measured with a durometer type A, and the measured hardness value is at least 5 or more. Whether it is uncured or cured can also be determined.
When the polyorganosiloxane is classified according to the curing mechanism, polyorganosiloxanes such as an addition polymerization curing type, a condensation polymerization curing type, an ultraviolet curing type, and a peroxide crosslinking type can be generally exemplified. Among these, addition polymerization curing type (addition type polyorganosiloxane) and condensation curing type (condensation type polyorganosiloxane) are preferable. Among these, a polyorganosiloxane type that has no by-products and cures by irreversible hydrosilylation (addition polymerization) is more preferable. This is because when a by-product is generated during the molding process, the pressure in the molded container tends to increase or it remains as foam in the cured material.

  Addition type polyorganosiloxane refers to a polyorganosiloxane chain crosslinked by an organic addition bond. As a typical example, the molar ratio of the total hydrosilyl group amount to the total alkenyl group amount of a silicon-containing compound having an alkenyl group such as vinylsilane and a silicon compound containing a hydrosilyl group such as hydrosilane is 0.5 times. Examples thereof include compounds having Si—C—C—Si bonds at the cross-linking points obtained by mixing in an amount ratio of 2.0 times or less and reacting in the presence of an addition condensation catalyst such as a Pt catalyst. .

  Examples of the condensed polyorganosiloxane include a compound having a Si—O—Si bond obtained by hydrolysis and polycondensation of an alkylalkoxysilane at a crosslinking point.

<(B) White pigment>
The white pigment (B) used in the present invention is a known white color having an aspect ratio of primary particles of 1.2 to 4.0 and a primary particle diameter of 0.1 μm to 2.0 μm that does not hinder the curing of the resin. A pigment can be appropriately selected. As the white pigment, inorganic and / or organic materials can be used. Here, white means colorless and not transparent. That is, it means a color that can diffusely reflect incident light by a substance that does not have a specific absorption wavelength in the visible light region.

Examples of inorganic particles that can be used as the white pigment include metal oxides such as alumina (hereinafter sometimes referred to as “aluminum oxide”), silicon oxide, titanium oxide (titania), zinc oxide, magnesium oxide, and zirconium oxide. Metal salts such as calcium carbonate, barium carbonate, magnesium carbonate, barium sulfate; boron nitride, alumina white, colloidal silica, aluminum silicate, zirconium silicate, aluminum borate, clay, talc, kaolin, mica, synthetic mica, etc. Can be mentioned.
Examples of the organic fine particles that can be used as the white pigment include resin particles such as fluororesin particles, guanamine resin particles, melamine resin particles, acrylic resin particles, and silicone resin particles. Is not to be done.
Of these, alumina, titanium oxide, zinc oxide, zirconium oxide, and the like are particularly preferable from the viewpoint that the whiteness is high and the light reflection effect is high even with a small amount, and it is difficult to change quality. Also, alumina, boron nitride, and the like are particularly preferable from the viewpoint of improving the thermal conductivity when the material is cured. Alumina is particularly preferable from the viewpoint of high near-ultraviolet light reflection effect and small alteration due to near-ultraviolet light.
These can be used alone or in admixture of two or more.
Titanium oxide can be contained to such an extent that problems such as photocatalytic properties, dispersibility, and whiteness do not occur.

  As the refractive index difference between (A) the polyorganosiloxane and (B) the white pigment is larger, the whiteness is higher just by adding a small amount of white pigment, and the resin molding for semiconductor light-emitting devices has better reflection and scattering efficiency. You can get a body. The polyorganosiloxane (A) preferably has a refractive index of about 1.41, and alumina particles having a refractive index of 1.76 can be suitably used as the (B) white pigment.

  Alumina has a low ability to absorb ultraviolet rays, and therefore can be suitably used particularly when used with a light emitting element emitting ultraviolet to near ultraviolet light. The alumina used in the present invention is not limited in crystal form, but α-alumina having characteristics such as chemically stable, high melting point, high mechanical strength, high hardness, and high electric insulation resistance is preferable. Can be used.

In the present invention, when alumina is used as the white pigment (B), the crystallite size of the alumina crystal is preferably 500 to 2,000, more preferably 700 to 1,500, and more preferably 900 to It is particularly preferable that it is 1,300 mm or less. A crystallite is the largest group that can be regarded as a single crystal.
When the crystallite size of the alumina crystal is in the above range, it is preferable in that the pipes, screws, molds and the like at the time of molding are less worn and impurities due to wear are less likely to be mixed.
The crystallite size can be confirmed by X-ray diffraction measurement.

  The heat conductivity at the time of curing of the resin molded material of the present invention is preferably higher from the viewpoint of molding efficiency, but in order to increase the heat conductivity, it is necessary to use alumina having a purity of 98% or more. It is preferable to use alumina having a purity of 99% or more, and it is particularly preferable to use low soda alumina. In order to increase the thermal conductivity, it is also preferable to use boron nitride, and it is particularly preferable to use boron nitride having a purity of 99% or more.

In particular, in a semiconductor light emitting device using a light emitting element having an emission peak wavelength of 420 nm or more, titanium oxide can also be suitably used as a white pigment. Titanium oxide (titania) has an ultraviolet absorbing ability, but has a high refractive index and a strong light scattering property. Therefore, the reflectance of light having a wavelength of 420 nm or more is high, and high reflection is easily exhibited even with a small addition amount. When titania is used as the white pigment of the present invention, a rutile type that is stable at high temperature, has a high refractive index, and has a relatively high light resistance is more stable than an anatase type that has a large ultraviolet absorbing ability and photocatalytic ability and is unstable at high temperature. A rutile type in which a surface is coated with a thin film of silica or alumina for the purpose of suppressing photocatalytic activity is particularly preferable.
Titanium oxide has a high refractive index and a large difference in refractive index from polyorganosiloxane, so that even a small amount of addition tends to be highly reflective, so the ratio of alumina and titanium oxide is 50:50 to 95: 5 (weight ratio). You may use together.

The aspect ratio of the primary particles of the (B) white pigment used in the present invention is 1.2 or more and 4.0 or less.
The aspect ratio is generally used as a simple method for quantitatively expressing the shape of a particle. In the present invention, the major axis length (maximum major axis) of a particle measured by observation with an electron microscope such as SEM is the minor axis length. It is obtained by dividing by the length (the length of the longest part perpendicular to the major axis). When the axial length varies, a plurality of points (for example, 10 points) can be measured with an SEM and calculated from the average value. Alternatively, the same calculation result can be obtained by measuring 30 points and 100 points.
A preferred aspect ratio is 1.25 or more, more preferably 1.3 or more, and particularly preferably 1.4 or more. On the other hand, the upper limit is preferably 3.0 or less, more preferably 2.5 or less, still more preferably 2.2 or less, particularly preferably 2.0 or less, and most preferably 1.8 or less.
When the aspect ratio is in the above range, high reflectance is likely to be exhibited by scattering, and the reflection of light having a short wavelength in the near ultraviolet region is particularly large. Thereby, in the semiconductor light-emitting device using this resin molding, LED output can be improved.
In addition, the use of a white pigment having an aspect ratio in the above range is preferable in terms of molding because, for example, the mold is less worn. When the aspect ratio is larger than the above range, the mold may be worn by contact with the pigment particles. Conversely, when using a white pigment with a small aspect ratio, the packing density of the pigment in the material may be reduced. Since the height can be increased, the frequency of contact between the mold and the pigment increases, and the mold tends to wear. Furthermore, when white pigments with an aspect ratio in the above range are used, the material viscosity can be easily adjusted and adjusted to a viscosity suitable for molding, so that the molding cycle can be shortened and burrs can be prevented. An excellent material.

When the aspect ratio is in the above range, the white pigment is filled in the gaps of the mold and burrs are less likely to occur, but when the aspect ratio is nearly spherical, such as less than 1.2, the burrs pass through the gaps of the mold. Is likely to occur.
In the present invention, the particles whose aspect ratio falls within the above range preferably occupies 60% by volume or more, more preferably 70% by volume or more, and particularly preferably 80% by volume or more of the entire white pigment (B). (B) It is a matter of course for those skilled in the art that the white pigment does not have to satisfy the above aspect ratio range.

  In order to set the aspect ratio within the above range, a general method such as surface treatment or polishing of the white pigment may be employed. It can also be adjusted by crushing (pulverizing) the white pigment to make it fine, or by classifying it with sieve powder or the like.

  The white pigment (B) used in the present invention is preferably a crushed shape, a rounded shape with few crystal corners by treatment after crushing, or a non-spherical pigment produced by firing or the like. Shape is also included.

In the present invention, (B) a primary pigment having a primary particle diameter of 0.1 μm or more and 2 μm or less is used. The lower limit is preferably 0.15 μm or more, more preferably 0.2 μm or more, particularly preferably 0.25 μm or more, and the upper limit is preferably 1 μm or less, more preferably 0.8 μm or less, particularly preferably 0. .5 μm or less.
When the primary particle size is in the above range, the material is easy to express high reflectivity by combining the backscattering tendency and the scattered light intensity, and the reflection with respect to light having a short wavelength particularly in the near ultraviolet region is increased, which is preferable. .
If the primary particle diameter is too small, the white pigment tends to have low reflectance because the scattered light intensity is low.If the primary particle diameter is too large, the scattered light intensity tends to increase, but the reflectance tends to be forward scattering. It tends to be smaller.
Further, when the primary particle diameter is in the above range, it is preferable from the viewpoint of moldability, such as easy adjustment to a viscosity suitable for molding and less wear of the mold. When the primary particle diameter is larger than the above range, the impact on the mold due to contact with the pigment particles tends to be large and the wear of the mold tends to be severe, and when using a white pigment whose primary particle diameter is smaller than the above range However, since the material tends to be highly viscous and the filling amount of the white pigment cannot be increased, it tends to be difficult to achieve compatibility between material properties such as high reflection and moldability.
In particular, in order to obtain a material that can be suitably used for liquid injection molding, it is necessary that the material has a thixotropic property of a certain level or more. Adding a white pigment with a primary particle size of 0.1 μm or more and 2.0 μm or less to the composition has a large thixotropy-imparting effect and makes it easy to mold with few burrs and shorts, so viscosity and thixotropy are easy. Can be adjusted.
A white pigment having a primary particle diameter larger than 2 μm can be used in combination for the purpose of increasing the filling rate of the white pigment in the resin composition.

  The primary particle in the present invention refers to the smallest unit that can be clearly distinguished from other particles constituting the powder, and the primary particle diameter can be measured by observation with an electron microscope such as SEM. On the other hand, agglomerated particles formed by agglomeration of primary particles are called secondary particles. The center particle size of secondary particles is determined by dispersing the powder in a suitable dispersion medium (for example, water in the case of alumina) and using a particle size analyzer. Can be measured. When the primary particle size varies, several points (for example, 10 points) are observed with an SEM, and the average value may be set as the particle size. In the measurement, when each particle is not spherical, the longest length, that is, the length of the major axis is taken as the particle diameter.

On the other hand, the white pigment preferably has a secondary particle central particle size (hereinafter sometimes referred to as “secondary particle size”) of 0.2 μm or more, and 0.3 μm or more. More preferred. The upper limit is preferably 10 μm or less, more preferably 5 μm or less, and even more preferably 2 μm or less.
When the secondary particle size is in the above range, the moldability of liquid injection molding becomes good, which is preferable. In addition, it is easy to adjust to a viscosity suitable for molding, and there is little wear on the mold. In addition, since the white pigment does not easily pass through the gap between the molds, burrs are not easily generated, and the mold gate is not easily clogged, so that troubles during molding hardly occur. When the secondary particle size is larger than the above range, the material tends to become non-uniform due to the precipitation of the white pigment, the moldability is impaired due to mold wear and gate clogging, and the reflection of the molded product is Uniformity may be impaired.
In addition, for the purpose of increasing the filling rate of the white pigment in the resin composition, a white pigment having a secondary particle size larger than 10 μm can be used in combination. The central particle diameter means a particle diameter at which the volume integrated value of the volume-based particle size distribution curve becomes 50%, and generally refers to what is called 50% particle diameter (D ₅₀ ) and median diameter.

In the present invention, the content of the (B) white pigment in the resin molded body material for a semiconductor light emitting device is appropriately selected depending on the particle diameter and type of the pigment used and the difference in refractive index between the polyorganosiloxane and the pigment, and is not particularly limited. For example, the content in the composition is usually 30% by weight or more, preferably 45% by weight or more, and usually 85% by weight or less, preferably 70% by weight or less.
When it is within the above range, reflectivity, moldability and the like are good. If it is less than the above lower limit, light tends to be transmitted and the reflection efficiency of the semiconductor light emitting device tends to decrease, and if it is larger than the upper limit, the fluidity of the material tends to deteriorate and the moldability tends to decrease. is there.
In addition, in order to control the thermal conductivity of the resin molded body material to be described later in the range of 0.4 to 3.0, (B) alumina is used as the white pigment with respect to the total amount of the resin molded body material. It is preferable to add at least 90 parts by weight. Alternatively, (B) boron nitride is preferably added as a white pigment in an amount of 30 parts by weight or more and 90 parts by weight or less based on the total amount of the resin molding material. Alumina and boron nitride may be used in combination.

<3.2.3. (C) Curing catalyst>
The (C) curing catalyst in the present invention is a catalyst for curing the polyorganosiloxane of (A). This catalyst includes an addition polymerization catalyst and a condensation polymerization catalyst depending on the curing mechanism of the polyorganosiloxane.

  The addition polymerization catalyst is a catalyst for promoting the addition reaction between the alkenyl group and the hydrosilyl group in the component (A). Examples of the addition polymerization catalyst include platinum black, second platinum chloride, platinum chloride. Examples include acids, reaction products of chloroplatinic acid and monohydric alcohol, complexes of chloroplatinic acid and olefins, platinum-based catalysts such as platinum bisacetoacetate, platinum-based catalysts such as palladium-based catalysts and rhodium-based catalysts. . The amount of addition polymerization catalyst is usually 1 ppm or more, preferably 2 ppm or more, usually 100 ppm or less, preferably 50 ppm or less, more preferably 20 ppm or less, based on the weight of component (A) as a platinum group metal. It is.

  As a catalyst for condensation polymerization, acids such as hydrochloric acid, nitric acid, sulfuric acid, organic acids, alkalis such as ammonia and amines, organic boron compounds such as boron alkoxides, metal chelate compounds, and the like can be used. A metal chelate compound containing any one or more of Ti, Ta, Zr, Al, Hf, Zn, Sn, Ga, and Pt can be used. Among them, the metal chelate compound preferably contains one or more of Ti, Al, Zn, Zr, and Ga, and more preferably contains Zr.

The blending amount of the catalyst for condensation polymerization is usually 0.01% by weight or more, preferably 0.05% by weight or more, while the upper limit is usually 10% by weight or less, preferably 6% by weight based on the total weight of the component (A). % Or less.
When the addition amount of the catalyst is within the above range, the curability and storage stability of the resin molded body material for a semiconductor light emitting device are good, and the quality of the molded resin molded body is also good. If the added amount exceeds the upper limit value, there may be a problem in the storage stability of the resin molded body material. If it is less than the lower limit value, the curing time becomes longer and the productivity of the resin molded body decreases. There is a tendency for quality to decline.
These catalysts are selected in consideration of the stability of the resin composition for a semiconductor light emitting device, the hardness of the coating, non-yellowing, curability and the like.

<Others>
It is preferable that the material for a resin molded body for a semiconductor light emitting device of the present invention further contains a curing rate control agent. Here, the curing rate control agent is for controlling the curing rate in order to improve the molding efficiency when molding the resin molding material, and includes a curing retarder or a curing accelerator.

The curing retarder is an important component particularly in liquid injection molding of an addition polymerization type polyorganosiloxane composition having a high curing rate.
Examples of the curing retarder in the addition polymerization reaction include compounds containing an aliphatic unsaturated bond, organic phosphorus compounds, organic sulfur compounds, nitrogen-containing compounds, tin compounds, organic peroxides, and the like. It doesn't matter.
Examples of the compound containing an aliphatic unsaturated bond include 3-hydroxy-3-methyl-1-butyne, 3-hydroxy-3-phenyl-1-butyne, and 3- (trimethylsilyloxy) -3-methyl-1-butyne. And propargyl alcohols such as 1-ethynyl-1-cyclohexanol, ene-yne compounds, and maleic acid esters such as dimethyl malate.
Examples of the curing retarder in the condensation polymerization reaction include compounds having a reaction with hydrogen or a hydrogen bond, such as lower alcohols having 1 to 5 carbon atoms, amines having a molecular weight of 500 or less, organic compounds containing nitrogen or sulfur, and epoxy group-containing compounds. .

  By selecting the type and blending amount of the curing rate control agent according to the purpose, molding of the resin molded body material becomes easy. For example, there is an advantage that the filling rate into the mold becomes high or there is no leakage from the mold when molding by injection molding, and burrs are hardly generated.

As long as the effects of the present invention are not impaired, the thermosetting silicone resin composition, which is a material for a resin molded body for a semiconductor light emitting device, contains one or two or more other components as required in any ratio. It can be contained in combination.
For example, a fluidity adjusting agent can be contained for the purpose of controlling fluidity of the thermosetting silicone resin composition and suppressing sedimentation of white pigment.
The fluidity modifier is not particularly limited as long as it is a solid particle from the normal temperature to the molding temperature where the viscosity of the thermosetting silicone resin composition is increased by addition, for example, silica fine particles, quartz beads, glass beads, etc. Examples thereof include inorganic particles, inorganic fibers such as glass fibers, boron nitride, and aluminum nitride.

Further, in order to adjust the viscosity of the thermosetting silicone resin composition, a non-curable polyorganosiloxane can be partially blended with the (A) polyorganosiloxane as a liquid thickener.
The blending amount of the polyorganosiloxane as the liquid thickener is usually 0 to 10 parts by weight, preferably 0.1 to 5 parts by weight, more preferably 0, when the total amount of the polyorganosiloxane (A) is 100 parts by weight. About 5 to 3 parts by weight can be used in place of (A).

In addition to the above components, the thermosetting silicone resin composition may contain inorganic fibers such as glass fibers for the purpose of increasing the strength and toughness after thermosetting, and has a thermal conductivity. Therefore, boron nitride, aluminum nitride, fibrous alumina or the like having high thermal conductivity can be contained separately from the aforementioned white pigment. In addition, for the purpose of lowering the linear expansion coefficient of the cured product, quartz beads, glass beads and the like can be contained.
If the content when adding these is too small, the desired effect can not be obtained, and if it is too large, the viscosity of the thermosetting silicone resin composition increases and affects the workability, so a sufficient effect is expressed. It can select suitably in the range which does not impair the workability of material. Usually, it is 500 parts by weight or less, preferably 200 parts by weight or less with respect to 100 parts by weight of the polyorganosiloxane.

  In addition, the thermosetting silicone resin composition includes an ion migration (electrochemical migration) inhibitor, an anti-aging agent, a radical inhibitor, an ultraviolet absorber, an adhesion improver, a flame retardant, a surfactant, Storage Stabilizer, Ozone Degradation Prevention Agent, Light Stabilizer, Thickener, Plasticizer, Coupling Agent, Antioxidant, Thermal Stabilizer, Conductivity Adder, Antistatic Agent, Radiation Blocker, Nucleating Agent, Phosphorus A system peroxide decomposer, a lubricant, a pigment, a metal deactivator, a physical property modifier, and the like can be contained within a range that does not impair the object and effect of the present invention.

<Composition ratio of composition>
The content of (A) polyorganosiloxane in the thermosetting silicone resin composition is usually 15% by weight or more and 50% by weight or less, preferably 20% by weight or more and 40% by weight or less of the entire resin composition. More preferably, it is 25% by weight or more and 35% by weight or less. In addition, when the hardening rate control agent contained in this resin composition and the liquid thickener which is another component are polyorganosiloxane, it shall be contained in content of said (A).
The content of the (B) white pigment in the thermosetting silicone resin composition is not limited as long as the resin composition can be used as a resin molding material as described above. It is 30 to 85 weight% of the whole, Preferably it is 40 to 80 weight%, More preferably, it is 45 to 70 weight%.
The content of the fluidity modifier in the thermosetting silicone resin composition is not limited as long as it does not impair the effects of the present invention, but is usually 55% by weight or less, preferably 2% by weight of the total resin composition. % To 50% by weight, more preferably 5% to 45% by weight.

<4. Semiconductor Light Emitting Device of the Present Invention>
Hereinafter, components other than the package in the semiconductor light emitting device of the present invention will be described with reference to FIGS.

<4.1. Semiconductor light emitting device>
As the light emitting element 20, a near ultraviolet semiconductor light emitting element that emits light having a wavelength in the near ultraviolet region, a purple semiconductor light emitting element that emits light in a purple region, a blue semiconductor light emitting element that emits light in a blue region, or the like is used. In general, these light-emitting elements emit light having a wavelength of 350 nm to 520 nm.

Specifically, the light emitting element 20 is formed by forming a semiconductor such as GaAlN, ZnS, ZnSe, SiC, GaP, GaAlAs, AlN, InN, AlInGaP, InGaN, GaN, AlInGaN on the substrate as a light emitting layer.
Examples of the semiconductor structure include a homo structure having a MIS junction, a PIN junction, and a PN junction, a hetero structure, and a double hetero structure. Various emission wavelengths can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal. The light emitting layer may have a single quantum well structure or a multiple quantum well structure formed as a thin film in which a quantum effect is generated.

  When considering use outdoors, it is preferable to use a gallium nitride compound semiconductor as a semiconductor material capable of forming the light-emitting element 20 with high brightness. In red, a gallium / aluminum / arsenic semiconductor or aluminum / indium / semiconductor is used. Although it is preferable to use a gallium / phosphorus-based semiconductor, various semiconductors can be used depending on the application.

When a gallium nitride compound semiconductor is used, a material such as sapphire, spinel, SiC, Si, ZnO or GaN single crystal is used for the semiconductor substrate. In order to form gallium nitride with good crystallinity with high productivity, it is preferable to use a sapphire substrate.
Gallium nitride-based compound semiconductors exhibit N-type conductivity without being doped with impurities. When forming a desired N-type gallium nitride semiconductor such as improving luminous efficiency, Si, Ge, Se, Te, C, etc. are preferably introduced as appropriate as N-type dopants.

  On the other hand, when a P-type gallium nitride semiconductor is formed, a P-type dopant such as Zn, Mg, Be, Ca, Sr, or Ba is doped. Since a gallium nitride based semiconductor is difficult to be converted into a P-type simply by doping with a P-type dopant, it is necessary to make it P-type by annealing it by heating in a furnace, low electron beam irradiation, plasma irradiation or the like after introducing the P-type dopant. The semiconductor wafer thus formed is partially etched to form positive and negative electrodes. After that, the light emitting element can be formed by cutting the semiconductor wafer into a desired size.

A plurality of such light emitting elements 20 can be used as necessary, and the color mixing property in white display can be improved by the combination thereof.
In order to improve the luminous efficiency, a metal reflective film is provided directly under the light emitting layer by vapor deposition, etc., and the substrate such as sapphire is peeled and removed, and the rear surface metal reflection is replaced with a new support substrate such as Ge or Si. A light-emitting element with a layer can also be used.

<4.2. Sealing material>
The sealing material 30 is inserted into the recess 14 in the package 10 on which the light emitting element 20 is placed, thereby covering the light emitting element 20.
The sealing material 30 can protect the light emitting element 20 from external force, dust, moisture, and the like from the external environment and can efficiently emit light emitted from the light emitting element 20 to the outside.
In addition, since the refractive index of the light emitting element 20 and the refractive index of air are greatly different, the light emitted from the light emitting element 20 is not efficiently output to the outside, but the light emitting element 20 is covered with the sealing material 30. By doing so, the light emitted from the light emitting element 20 can be efficiently output to the outside. Further, part of the light emitted from the light emitting element 20 is irradiated on the bottom surface 14 a and the side surface 14 b of the recess 14, reflected, and emitted to the main surface on which the light emitting element 20 is placed. Thereby, the light emission output on the main surface side can be improved.

  It is preferable to use a thermosetting resin composition as the resin composition for a sealing material constituting the sealing material 30. As a result, the thermosetting silicone resin composition constituting the resin molding in the package for semiconductor light emitting device and the thermosetting resin composition for sealing material constituting the sealing material are each a thermosetting resin. Since they are common, physical properties such as chemical properties and expansion coefficients are close, so that the adhesion is good, and peeling at the interface between the resin molded body and the sealing material can be prevented.

The thermosetting resin as the main component of the sealing material is a resin that is excellent in transparency, light resistance, and heat resistance, and can seal a semiconductor light emitting device without cracking or peeling even after long-term use. Used.
Examples of the thermosetting resin include an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylate resin, and a urethane resin, and one or more of them can be used. Among these, epoxy resins, modified epoxy resins, silicone resins, and modified silicone resins are preferable in terms of transparency, electrical insulation, and chemical stability. Particularly, silicone resins and modified silicone resins are excellent in light resistance and heat resistance. Since it is the same kind of resin as the resin molding, it is excellent in adhesion and is preferably used.
The sealing material 30 is preferably hard so as to protect the light emitting element 20. The sealing material 30 may be mixed with at least one selected from the group consisting of a filler, a diffusing agent, a pigment, a phosphor, and a reflective material in order to have a desired function. As the diffusing agent that can be used here, barium titanate, titanium oxide, aluminum oxide, silicon oxide and the like are preferable. In addition, organic or inorganic dyes or pigments can be included for the purpose of cutting light with an undesired wavelength. Furthermore, it is also preferable that the sealing material 30 contains one or more phosphors that convert the wavelength of light from the light emitting element 20.
Moreover, the sealing material 30 may contain the ultraviolet absorber and antioxidant other than said auxiliary agent.

<2.6. Phosphor>
A wavelength conversion member can be obtained by injecting and molding a composition of a phosphor and a sealing material described below into a cup of a semiconductor light-emitting device, or coating the thin film on a suitable transparent support. Can be used as
The phosphor is not particularly limited as long as it is a substance that is directly or indirectly excited by the light emitted from the semiconductor light-emitting element and emits light of a different wavelength. Even if it is an inorganic phosphor, an organic phosphor Can be used. For example, one or more of blue phosphor, green phosphor, yellow phosphor, orange to red phosphor as exemplified below can be used. It is preferable to appropriately adjust the type and content of the phosphor used so that a desired emission color can be obtained.

<Blue phosphor>
As the blue phosphor, those having an emission peak wavelength of usually 420 nm or more, particularly 430 nm or more, more preferably 440 nm or more, and usually 490 nm or less, especially 480 nm or less, and further 470 nm or less are preferable.
Specifically, (Ca, Sr, Ba) MgAl ₁₀ O ₁₇ : Eu, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ (Cl, F) ₂ : Eu, (Ba, Ca, Mg, Sr) ₂ SiO ₄ : Eu, (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ (Cl, F) ₂ : Eu, (Ba, Ca, Sr) ₃ MgSi ₂ O ₈ : Eu are preferred, Ba, Sr) MgAl ₁₀ O ₁₇ : Eu, (Ca, Sr, Ba) ₁₀ (PO ₄ ) ₆ (Cl, F) ₂ : Eu, Ba ₃ MgSi ₂ O ₈ : Eu are more preferable.

<Green phosphor>
The green phosphor preferably has an emission peak wavelength in the range of usually 500 nm or more, particularly 510 nm or more, more preferably 515 nm or more, and usually 550 nm or less, especially 542 nm or less, and even 535 nm or less.
Specifically, Y ₃ (Al, Ga) ₅ O ₁₂ : Ce, CaSc ₂ O ₄ : Ce, Ca ₃ (Sc, Mg) ₂ Si ₃ O ₁₂ : Ce, (Sr, Ba) ₂ SiO ₄ : Eu Β-type sialon, (Ba, Sr) ₃ Si ₆ O ₁₂ : N ₂ : Eu, SrGa ₂ S ₄ : Eu, BaMgAl ₁₀ O ₁₇ : Eu, Mn are preferable.

<Yellow phosphor>
As the yellow phosphor, those having an emission peak wavelength of usually 530 nm or more, particularly 540 nm or more, more preferably 550 nm or more, and usually 620 nm or less, especially 600 nm or less, further 580 nm or less are suitable.
The yellow _{phosphor, Y 3 Al 5 O 12:} Ce, (Y, Gd) 3 Al 5 O 12: Ce, (Sr, Ca, Ba, Mg) 2 SiO 4: Eu, (Ca, Sr) Si 2 N ₂ O ₂ : Eu, (La, Y, Gd, Lu) ₃ (Si, Ge) ₆ N ₁₁ : Ce are preferable.

<Orange to red phosphor>
As the orange to red phosphor, those having an emission peak wavelength in the range of usually 570 nm or more, particularly 580 nm or more, more preferably 585 nm or more, and usually 780 nm or less, particularly 700 nm or less, further 680 nm or less are preferable.
Specifically, (Ca, Sr, Ba) ₂ Si ₅ (N, O) ₈ : Eu, (Ca, Sr, Ba) Si (N, O) ₂ : Eu, (Ca, Sr, Ba) AlSi ( N, O) ₃ : Eu, (Sr, Ba) ₃ SiO ₅ : Eu, (Ca, Sr) S: Eu, (La, Y) ₂ O ₂ S: Eu, Eu (dibenzoylmethane) ₃ . Β-diketone Eu complex such as 10-phenanthroline complex, carboxylic acid Eu complex, K ₂ SiF ₆ : Mn is preferred, (Ca, Sr, Ba) ₂ Si ₅ (N, O) ₈ : Eu, (Sr, Ca) AlSi (N, O): Eu, (La, Y) ₂ O ₂ S: Eu, and K ₂ SiF ₆ : Mn are more preferable.
As the orange phosphor, (Sr, Ba) ₃ SiO ₅ : Eu, (Sr, Ba) ₂ SiO ₄ : Eu, (Ca, Sr, Ba) ₂ Si ₅ (N, O) ₈ : Eu, ( Ca, Sr, Ba) AlSi (N, O) ₃ : Ce is preferred.

<4.4. Protective element>
The semiconductor light emitting device 1 may further be provided with a Zener diode as a protective element. The Zener diode can be placed on the base 10 a as well as the light emitting element 20, and can be placed on the first lead 11 on the bottom surface 14 a of the recess 14 away from the light emitting element 20. Further, the protective element can be placed on the front or back surface of the first lead or the second lead and covered with a light-transmitting sealing material, or can be covered with the resin molded body 13.

<4.5. Heat sink (external heat dissipation member)>
A heat sink can be provided on the back side of the semiconductor light emitting device 1 via a heat radiation adhesive. This heat radiation adhesive preferably has higher thermal conductivity than the material of the resin molded body 13. As the material of the heat radiation adhesive, an electrically insulating epoxy resin, silicone resin, or the like can be used. The material of the heat sink is preferably aluminum, copper, tungsten, gold or the like having good thermal conductivity. In addition, a heat sink can be provided via a heat radiation adhesive so as to contact only the base 10a. Thereby, the eutectic metal containing solder with better thermal conductivity can be used as the heat radiation adhesive. By making the back side of the semiconductor light emitting device 1 flat, it is possible to maintain stability when the heat sink is mounted. In particular, by providing the base 10a and the heat sink so as to take the shortest distance from the light emitting element 20, heat dissipation can be further improved.

<4.6. Other embodiments>
Hereinafter, specific embodiments of the package for a semiconductor light emitting device of the present invention and the semiconductor light emitting device using the same other than the embodiment already described with reference to FIGS. 1 and 2 will be described with reference to the drawings. In addition, this invention is not limited to the following embodiment, In the range which does not deviate from the summary of this invention, it can change arbitrarily and can implement.

<4.6.1. Embodiment of FIG. 3>
A semiconductor light emitting device according to the embodiment of FIG. 3 will be described.
In the semiconductor light emitting device 1A shown in the schematic cross-sectional view of FIG. 3, the exposure of the inner lead portions of the first lead 11 and the second lead 12 is reduced, and the light reflection efficiency is improved by the resin molding. Is. In particular, when the inner lead portion is a silver-plated surface that easily deteriorates in color or a gold-plated surface that is inferior in reflectance, a high-efficiency semiconductor light-emitting device can be obtained while maintaining a high reflectance over a long period of time.

<4.6.2. Embodiment of FIG. 4>
The semiconductor light emitting device of FIG. 4 will be described.
In the semiconductor light emitting device 1B shown in a schematic cross-sectional view as FIG. 4, the phosphor layer 60 containing a light emitting substance is separated from the light emitting element 20 in order to prevent deterioration of the phosphor due to light, heat, and electric field from the light emitting element 20. It is an example of the installed remote phosphor mode.
By adopting a structure in which only the portion to be electrically connected is exposed on the bottom surface while ensuring the area of the inner lead portions 11a and 12a, the package 10 having both high reflectivity and thermal conductivity can be obtained. The thermosetting silicone resin composition constituting the resin molded body 13 is suitable for such a mode because it has high thermal conductivity and high reflectance even in a thin layer.
The phosphor layer 60 can be provided as necessary when the sealing material 30 does not contain a phosphor. Window materials and phosphor-containing resin moldings in which the phosphor layer 60 is coated on a transparent substrate with low gas permeability, such as polycarbonate, PET, or glass, even when directly applied onto the transparent sealing layer by potting, printing, or batch molding Or the like may be prepared separately and attached to the package opening. The phosphor layer 60 in FIG. 4 has a flat plate shape, but may be a convex lens-shaped or hollow dome-shaped molded product if necessary. By separating the phosphor from the light emitting element 20, it is possible to suppress a decrease in luminance due to light degradation of the phosphor, and by suppressing the in-plane distribution of light emission of the light emitting device by making the thickness of the phosphor layer 60 constant. Thus, a high-luminance light emitting device with little color variation can be obtained.

<4.6.3. Embodiment of FIG. 5>
The semiconductor light emitting device of FIG. 5 will be described. The schematic cross-sectional view of FIG. 5 is an example relating to a chip-on-board mounting type embodiment in which a cup-type reflector is not provided.

A semiconductor light emitting device 1C of FIG. 5 is provided on a chip-on-board (COB) substrate, and is integrated with a resin molded body 13 serving as a reflective material using a wiring substrate 70 including leads instead of leads. Is molded. Although the illustrated semiconductor light emitting device 1C is not provided with a cup-type reflector, a cup-type reflector similar to that shown in FIGS.
Also in these embodiments, the leads 11 and 12 are connected to the light emitting element 20 through the wire 40 at the connection portion. Of the leads 11, 12, a portion that is in the sealing material 30 and is directly connected to the light emitting element 20 by a die bond material, a wire, a bump, or the like is exposed outside the inner lead portions 11 a, 12 a and the sealing material 30. And the site | part which takes an electrical connection with electrodes, such as an external wiring board, corresponds to the outer lead parts 11b and 12b. In these embodiments, a part of the leads 11 and 12 is covered with the resin molded body 13. The resin molded body 13 also has a function as a white insulating layer, and this thickness can be increased.
A plurality of light emitting elements 20 may exist. A plurality of mounting portions may be collectively sealed with a sealing material.
The sealing material 30 may be transparent depending on the purpose of use, may contain a phosphor, and may be collectively sealed by molding when a reflector or a dam portion is not used. In the chip-on-board type, since the light emitting device portion can be provided directly on the wiring board 70, there is an advantage that it is easy to remove heat from the light emitting element to the wiring board 70 by eliminating the trouble of surface mounting. The outer lead portion may be exposed on the same surface as the light emitting element mounting side of the wiring board 70. However, when the package after mounting is divided and used as a single piece, the surface mounting is performed on another wiring board. When it is necessary to do so, a through hole or the like can be provided in the wiring board constituting the package to provide electrical continuity on the back surface, and an outer lead portion can be provided on the back surface of the light emitting device.
FIG. 5 shows an insulating material such as ceramics (AlN, Al ₂ O ₃ ) or a thermosetting silicone resin composition used in the present invention as a base substrate 80 constituting the wiring substrate 70. In this embodiment, a configured insulating substrate is used.
The base 10a is made of a member having a higher thermal conductivity than the base material used for the base substrate 80, such as a hardened material of metal or a heat conductive paste, and also acts as a heat sink, so that the heat generation amount of the light emitting element used is small. Even if it is large, it can sufficiently dissipate heat.

<4.6.4. Embodiment of FIG. 6>
A semiconductor light emitting device according to the embodiment of FIG. 6 will be described.
The semiconductor light emitting device 1D, whose schematic cross-sectional view is shown in FIG. 6, has a structure in which the electrical connection portions of the light emitting element 20, the first lead 11, and the second lead 12 are separated from the semiconductor light emitting device 1A of FIG. Have. Accordingly, it is possible to suppress a decrease in luminance due to coloring of a metal (such as silver) plating on an electrode in the immediate vicinity of the light emitting element 20 due to the influence of an electric field, heat, light, or the like from the light emitting element 20.

<4.6.5. Embodiment of FIG. 7>
A semiconductor light emitting device according to the embodiment of FIG. 7 will be described.
In the semiconductor light emitting device 1E shown in a schematic cross-sectional view as FIG. 7, the structure of the package 10 composed of the leads 11 and 12 and the resin molded body 13 is suitable for the liquid injection molding (LIM) method, and heat dissipation is possible. It has a good configuration.
In the package molding of the present invention, the silicone resin used as the package material binder is soft and tacky compared to the conventional engineering plastic resin, so that it is difficult to separate the mold, or the thin part of the molded body is cut off at the time of mold release and remains in the mold. It tends to be a factor that hinders continuous molding. For this reason, it is preferable that the upper edge of the side reflector part and the corner of the package have a shape close to a curved surface with no corners. In addition, it is preferable that the inner wall surface and the outer wall surface of the reflector have an inclination of about 3 ± 1 degrees from a line raised perpendicularly to the package bottom surface so that the reflector becomes thinner as the distance from the package bottom surface increases. In addition, the lead may be peeled off or dropped from the molded body due to the torsional external force applied to the package during molding, mold removal, parts feeding with a parts feeder, robot arm, etc., or when mounting a light emitting element. The inner leads preferably have a structure that is strong against a torsional stress and a local stress during wire bonding, for example, as seen from the top of the package. Furthermore, it is preferable that the lead has a structure with a large area between the upper and lower portions of the molded body. In the embodiment of FIG. 7, the resin molded body on the side surface portion and the bottom surface portion sandwiches the outer lead.
It is preferable that the lead be bent in advance because stress is not applied to the interface between the package and the lead, and the lead is less likely to break than bending after forming as shown in FIG. In this embodiment, the outer lead is bent in advance into a completed shape, and the back surface of the outer lead is on the same plane as the package mounting surface, so that mounting stability is high and heat dissipation is good.

<4.6.6. Embodiment of FIG. 8>
A semiconductor light emitting device according to the embodiment of FIG. 8 will be described.
A semiconductor light emitting device 1F shown in a schematic plan view as FIG. 8 is an embodiment in which a protective element is placed on the first lead or the second lead, and includes the protective element 20a. The light emitting element 20 can be protected from overcurrent. The light emitting element 20 is mounted on the base 10a. In the present embodiment, the resin molded body 13 is substantially square when viewed from above, but may have other shapes. Moreover, although the recessed part 14 of the resin molding 13 is substantially circular seeing from upper direction, it is good also as another shape. The base 10 a is exposed in the recess 14. As shown in the drawing, the protective element 20 a is placed on the first lead 11. In the present embodiment, the protection element 20a is exposed to the concave portion 14 of the resin molded body 13 together with the first lead. However, when it is necessary to consider the reflectance, the protection element 20a and the protection element 20a are placed. The first lead 11 and the wire 40 that electrically connects them may be embedded in the resin molded body 13. The first outer lead 11b, the second outer lead 12b, and the back surface of the base 10a are exposed to the back surface of the package 10 in the same structure as the embodiment of FIG. It can be electrically connected and surface mounted.

<5. Semiconductor Light Emitting Device Package and Semiconductor Light Emitting Device Manufacturing Method>
A method for manufacturing a semiconductor light emitting device having the package for a semiconductor light emitting device of the present invention will be described.
FIGS. 9A to 9E are schematic cross-sectional views illustrating the manufacturing steps of the semiconductor light emitting device according to the first embodiment.

First, as a first step, the first lead 11 and the second lead 12 corresponding to the bottom surface 14a of the recess 14 of the package 10 are sandwiched between the lower mold 100 and the upper mold 110 (FIG. 9A). And (b)).
Here, when the base 10a is integrally formed with the resin molding 13 together with the first lead 11 and the second lead 12, the base 10a is the first as shown in FIGS. 9 (a) and 9 (b). The lead 11 and the second lead 12 are inserted into the mold and sandwiched between the lower mold 100 and the upper mold 110. When the base 10a is inserted into the cavity formed in the package after molding, an upper mold and / or a lower mold having protrusions corresponding to the shape of the cavity is used. The

The lower mold 100 is formed with a concave portion 100b corresponding to the shape of the resin molded body 13 of the package 10 and a convex portion 100a corresponding to the shape of the concave portion 14 in the package.
Here, the flat surface 100c of the convex portion 100a corresponding to the bottom surface 14a of the concave portion 14 is formed so as to be in contact with the first inner lead portion 11a and the second inner lead portion 12a.

  Next, as a second step, the liquid thermosetting silicone resin composition described above is injected and molded into the space formed by the recesses of the lower mold 100 and the upper mold 110 using an injection molding machine ( FIG. 9 (c)).

  In this step, the liquid thermosetting silicone resin composition is supplied by a method such as pressure feeding from a predetermined container such as a pail can. The thermosetting silicone resin composition is either a one-pack type or a two-pack type, and once the composition is pumped to a metering plunger or metering screw part using a pail pump (drum pump), then a preheated mold A predetermined amount is injected from the measuring plunger (or measuring screw). In the case of the two-component type, the two components are measured simultaneously by a method in which two single-component pail pumps (drum pumps) are coaxially operated and the plunger is operated simultaneously, or by a method linked and operated by a hydraulic mechanism. Then, it may be injected from the measuring plunger (or measuring screw) via the mixing device. In order to reduce measurement errors, the two components are preferably close to a volume ratio of 1: 1, and in order to mix uniformly, the respective viscosities are preferably set to the same level. Subsequently, the lower mold 100 and the upper mold 110 are heated to a predetermined temperature to cure the injected first thermosetting resin.

  1st inner lead part 11a and 2nd inner lead part 12a (When a resin molding contacts the back of inner lead parts 11a and 12a, the 1st outer lead part 11b and the 2nd outer lead part 12b) Is sandwiched between the molds, so that these leads do not flutter when the thermosetting silicone resin composition is injected, and the generation of burrs can be suppressed. Note that support pins for supporting the back surfaces of the inner lead portions 11a and 12a can be used as necessary.

Here, the injection molding pressure in the second step is preferably 10 to 1200 kg / cm ² . In the injection molding pressure is less than 10 kg / cm ^2, slow flow in the mold of the liquid curable composition, curing may cause unfilled (short) occurs prior, exceeds 1200 kg / cm ² There is a possibility that the flow of the liquid curable composition is too fast and filling unevenness in which the thin portion or the like is unfilled occurs, or the molded product expands due to residual stress, resulting in poor mold release.
Furthermore, the cylinder temperature of the liquid injection molding machine is preferably 0 ° C to 100 ° C. If the cylinder temperature is less than 0 ° C., the condensed water may be mixed into the liquid thermosetting composition and may be frozen and cannot be removed. If the temperature exceeds 100 ° C., the curing reaction of the liquid thermosetting composition proceeds excessively, There is a possibility of thickening.

Next, as a third step, the injected and injected thermosetting silicone resin composition is heated and cured to obtain a resin molded body 13 having a recess 14 having a bottom surface 14a and a side surface 14b.
From the viewpoint of reducing burrs and short molds and improving mold release, the conditions such as the temperature and time of the heating / curing process are 120 ° C. to 230 ° C. and 3 ° C., respectively. It is preferable that it is for 10 seconds. You may post-cure as needed.
If the curing temperature at the time of liquid injection molding is higher than this range, there is a possibility of causing degradation of the resin and unfilling due to the too high curing rate. On the other hand, when the curing temperature is lower than this range, it takes a long time to cure and the productivity may be lowered, or the mold release may be deteriorated due to insufficient curing. The curing time may be appropriately selected according to the gelation rate and curing rate of the thermosetting silicone resin composition, but is preferably 3 seconds to 10 minutes, more preferably 5 seconds to 200 seconds, and still more preferably Is 10 seconds or more and 60 seconds or less. If the curing time is shorter than the above range, insufficient curing may occur and mold release may deteriorate. Further, if the curing time is longer than the above range, the productivity is lowered and the advantages of liquid injection molding cannot be utilized.

  Thus, the package for the semiconductor light emitting device of the present invention having the recess 14 having the bottom surface 14a and the side surface 14b, in which the first lead 11, the second lead 12, and the resin molded body 13 are integrally formed. Can be provided.

Next, as a fourth step, the lower mold 100 and the upper mold 110 are removed in order to place the light emitting element 20 (FIG. 9D).
In addition, when the base 10a is inserted into the cavity formed in the package after being molded, the base 10a is inserted into the cavity after the molded body is taken out from the mold to obtain a package having the base.

Next, the following is performed as the fifth step.
The light emitting element 20 is mounted on the base 10a, and the first electrode 21 of the light emitting element 20 and the first inner lead portion 11a are electrically connected via the wire 40.
Through the above steps, a package having the shape of FIG. 9D is formed.

  When the light emitting element 20 has electrodes on the upper surface and the lower surface, the first electrode 21 on the lower surface of the light emitting element 20 is electrically connected to the base 10a by die bonding without using a wire. The base 10a and the first inner lead portion 11a are connected. When the base 10a is made of an insulating material, a conductive submount is used between the base 10a and the light emitting element 20, and the submount and the first inner lead portion 11a are electrically connected. May be connected. Next, the second electrode 22 of the light emitting element 20 and the second inner lead portion 12 a are electrically connected via the wire 40. Here, when the protective element 20a is mounted on the first lead 11 or the second lead 12, the mounting step may be performed before or after the fifth step.

  Next, as a sixth step, a thermosetting resin composition for a sealing material is inserted into the recess 14 where the light emitting element 20 is placed.

  The thermosetting resin composition for a sealing material can be charged by a dropping method, an injection method, an extrusion method, or the like, preferably by a dropping method. This is because the air remaining in the recess 14 can be efficiently discharged by dropping. The thermosetting resin composition for a sealing material preferably contains a phosphor. Thereby, the color tone adjustment of the semiconductor light emitting device can be facilitated.

  Next, as a seventh step, the sealing material 30 is molded by heating and curing the thermosetting resin composition for the sealing material (FIG. 9E).

By such a procedure, a semiconductor light emitting device excellent in heat resistance, light resistance, adhesion and the like can be manufactured with high productivity. Further, when the resin molded body is manufactured, burrs are a problem because the flowability of the resin composition is good, but burrs are hardly generated because these leads are firmly sandwiched between the upper mold and the lower mold. Since the sandwiched lead is exposed, the light emitting element can be placed on the exposed portion, or the electrode and the lead of the light emitting element can be connected with a wire or the like.
In particular, the thermosetting silicone resin composition that is the material of the resin molded body 13 for the semiconductor light emitting device and the thermosetting resin composition for the sealing material that is the material of the sealing material 30 are both based on the thermosetting resin. Therefore, it is possible to provide a semiconductor light emitting device that has excellent adhesion, is less likely to cause peeling at the interface between the resin molded body 13 for a semiconductor light emitting device and the sealing material 30, and is excellent in heat resistance, light resistance, adhesion, and the like. Can do.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited to a following example, unless the summary is changed.

In Example 1, a thermosetting silicone resin composition using a liquid thermosetting polyorganosiloxane (1), which will be described later, is used as a resin for a resin molded body, and evaluation corresponding to a package for a semiconductor light emitting device is performed. Each specimen was molded.
In addition, as Comparative Example 1, a commercially available package and test piece manufactured using Amodel A4122 manufactured by Solvay Advanced Polymers Co., Ltd., which is a polyphthalamide resin composition (containing a titania pigment and glass fiber), were used. .
The physical properties of each material and the obtained composition were measured, and the reflectance was compared using each test piece.

[1. Production of liquid thermosetting polyorganosiloxane (1)]
Vinyl group-containing polydimethylsiloxane composition (vinyl group: 0.3 mmol / g contained, viscosity 3500 mPa · s, platinum complex catalyst 8 ppm contained) and hydrosilyl group-containing polydimethylsiloxane composition (vinyl group: 0.1 mmol / g contained) , Hydrosilyl group: 4.6 mmol / g contained, viscosity: 600 mPa · s) and polydimethylsiloxane (vinyl group: 0.2 mmol / g contained, hydrosilyl group: 0. Liquid thermosetting polyorganosiloxane containing 1 mmol / g, alkynyl group: 0.2 mmol / g, 500 mPa · s) at a ratio of 100: 10: 5 and containing (C) a platinum concentration of 7 ppm as a curing catalyst. (1) was obtained.
The liquid thermosetting polyorganosiloxane (1) had a refractive index of 1.41.

[2. Preparation of resin molding material, production of reflectance measurement specimen]
(A) Liquid thermosetting polyorganosiloxane obtained above (1) 60 parts by weight, (B) White pigment as primary particle diameter 0.3 μm, secondary particle diameter D ₅₀ 1.2 μm, aspect ratio 35 parts by weight of 1.48 α crystal form crushed alumina and (E) 5 parts by weight of silica fine particles “AEROSIL RX200” (specific surface area 140 m ² / g) as a fluidity adjusting agent are blended. The white pigment and silica fine particles were dispersed in the above (1) by stirring with a mixer to obtain a white resin molded material. These materials were cured by a hot press machine at 180 ° C., 10 kg / cm ² , and a curing time of 240 seconds to obtain a circular test piece (test piece) of Example 1 having a diameter of 13 mm and a thickness of 410 μm. .
About the polyphthalamide resin of the comparative example 1, what cut out the 2 mm thickness test panel of Amodel A4122 by Solvay Advanced Polymers Co., Ltd. to the magnitude | size of about 10 square mm was made into the test piece (test piece).

[3. Measuring method of primary particle diameter of white pigment and aspect ratio of primary particles]
The primary particle diameter was measured by SEM observation of the white pigment (alumina powder) used in the examples. When there was variation in the particle diameter, several points (for example, 10 points) were observed with an SEM, and the average value was obtained as the particle diameter. In particular, when the difference between the small particle size and the large particle size is about 5 times or more except for fine particles and coarse particles contained in a very small amount, the maximum and minimum values are recorded. The major axis length (maximum major axis) and minor axis length (the length of the longest part perpendicular to the major axis) are also measured, and the major axis length is adopted as the primary particle diameter. The value obtained by dividing (maximum major axis) by the minor axis length (the length of the longest portion perpendicular to the major axis) was taken as the aspect ratio.

[4. Method of measuring the mean particle diameter D ₅₀ of the white pigment secondary particles]
10 g of 0.2% sodium polyphosphate aqueous solution was added to 10 to 20 mg of white pigment (alumina powder), and alumina was dispersed by ultrasonic vibration. Using this dispersion, the volume-based center particle diameter D ₅₀ of the secondary particles of the white pigment was measured with a Microtrac MT3000II manufactured by Nikkiso Co., Ltd. The central particle size D ₅₀ is the particle size at the point where the volume-based particle size distribution curve of cumulative% intersects the horizontal axis of 50%.

[5. Specimen reflectance measurement]
About each test piece of the said Example 1 and the comparative example 1, the reflectance in the wavelength of 360 nm to 740 nm was measured with the measurement diameter of 6 mm using SPECTROTOPOMETER CM-2600d by Konica Minolta. The measurement results are shown in FIG. 10 and Table 1 together with the reflectance value of the lead electrode alone. The resin molded body material of the present invention is a type of resin and reflector filler used as a binder rather than polyphthalamide resin, which is a conventional package material, and silver-plated copper lead frames (leads) frequently used for LEDs. Since the reflectance is high due to the particle diameter, it is possible to reduce the exposed area of the electrode on the surface of the silver plating which is likely to be colored and deteriorated during long-term use.
The test piece was cut with a microtome while frozen in liquid nitrogen, and SEM observation of the package cross section was performed. The primary particle diameter of the alumina exposed in the cross section was 0.3 μm, and the aspect ratio of the primary particles was 1.48.

[6. Viscosity measurement of resin molding materials]
About the material for resin moldings of Example 1, viscosity measurement was performed at a measurement temperature of 25 ° C. using a parallel plate in RMS-800 manufactured by Rheometrics.
The results are shown in Table 2 and FIG. It can be seen that the material of Example 1 is suitable for the liquid injection molding of a resin molded body in terms of the viscosity at a shear rate of 1 s ⁻¹ and 100 s ⁻¹ at 25 ° C. and the inclination thereof.

[7. Liquid injection molding of packages]
Using the resin molded body material of Example 1, a package for a semiconductor light emitting device having the shape of the embodiment of FIGS. 1 and 2 is formed by liquid injection molding together with a copper lead frame plated with silver on the entire surface. Molding is performed under conditions of a mold temperature of 170 ° C. and a curing time of 20 seconds.

[8. Manufacturing of sealing material]
Momentive Performance Materials Japan G.K. both ends silanol dimethyl silicone oil XC96-723 385g, methyltrimethoxysilane 10.28g, and zirconium tetraacetylacetonate powder 0.791g as a catalyst, , Weighed into a 500 ml three-necked flask equipped with a fractionating tube, Dimroth condenser and Liebig condenser, and stirred at room temperature for 15 minutes until the coarse particles of the catalyst were dissolved. Thereafter, the temperature of the reaction solution was raised to 100 ° C. to completely dissolve the catalyst, and initial hydrolysis was performed while stirring at 500 rpm for 30 minutes under 100 ° C. total reflux using a Dimroth condenser.

Subsequently, the distillation line was switched to the Liebig condenser side, nitrogen was blown into the liquid with SV20, and methanol, water, and by-product low-boiling silicon compounds were distilled off accompanied by nitrogen at 100 ° C. and 500 rpm. Stir for hours. The polymerization reaction was continued for 5 hours while raising and maintaining the temperature at 130 ° C. while blowing nitrogen into the liquid with SV20 to obtain a reaction liquid having a viscosity of 120 mPa · s. “SV” is an abbreviation for “Space Velocity” and refers to a nitrogen blowing volume ratio per unit time (vs. reaction solution volume).
Nitrogen blowing was stopped and the reaction solution was once cooled to room temperature. Then, the reaction solution was transferred to an eggplant-shaped flask, and a methanol remaining in a minute amount at 120 ° C. and a pressure of 1 kPa on an oil bath using a rotary evaporator. Water and a low-boiling silicon compound were distilled off to obtain a solvent-free sealing material liquid having a viscosity of 230 mPa · s and a refractive index of 1.41.

[9. Manufacturing of light-emitting device]
[9-1. Assembly of light emitting device]
Using the packages of Example 1 and Comparative Example 1, three types of light emitting devices are each assembled as follows. Silicone die-bonding material (Ker-3000 manufactured by Shin-Etsu Chemical Co., Ltd.) is placed at a predetermined position on the inner lead where one semiconductor light emitting element (rated current 20 mA) having emission wavelengths of 360 nm, 406 nm, and 460 nm is exposed in the recess of the package. After installation via -M2), the silicone die bond material is cured at 100 ° C. for 1 hour and further at 150 ° C. for 2 hours. After mounting the semiconductor light emitting element on the package in this way, the lead electrode of the package and the semiconductor light emitting element are connected with a gold wire.

[9-2. Semiconductor light emitting device sealing]
After dripping the above-mentioned sealing material into the package recess of the light emitting device manufactured in 9-1 so as to be the same height as the upper edge of the opening, 90 ° C. × 2 hours, and then 110 ° C. × Three types of semiconductors having a light emitting element of 360 nm, 406 nm, and 460 nm for each of the packages of Example 1 and Comparative Example 1 are cured by heating and curing for 1 hour at 150 ° C. for 3 hours to transparently seal the semiconductor light emitting element. A light emitting device is obtained.

  According to the present invention, indoor and outdoor lighting fixtures, displays, backlights for mobile phones, liquid crystal televisions, digital signage, etc., in-vehicle lighting such as camera flashlights, headlights, inspection and medical lighting, plant factories A semiconductor light-emitting device that can be suitably used as a light source for various illuminations is provided.

1, 1A to 1F Semiconductor light emitting device 10 (resin for semiconductor light emitting device) package 10a base 11 first lead 11a first inner lead portion 11b first outer lead portion 12 second lead 12a second inner lead Portion 12b Second outer lead portion 13 (for semiconductor light emitting device) resin molded body 13a (resin molded body) connecting portion 14 recess 14a bottom surface 14b side surface 20 light emitting element 20a protective element 21 first electrode 22 second electrode 30 Sealing material 40 Wire 50a, 50b Insulator 60 Phosphor layer 70 Wiring substrate 80 Base substrate 100 Lower mold 110 Upper mold

Claims (17)

A resin package for a semiconductor light emitting device, comprising: a first lead; a second lead; and a resin molded body formed integrally with the first lead and the second lead;
The resin package is formed with a recess having a bottom surface and a side surface, and the first lead and the second lead are exposed from the bottom surface of the recess, and the resin package mounts the semiconductor light emitting element. Has a base of
And the resin molded body comprises (A) polyorganosiloxane, (B) a white pigment having an aspect ratio of primary particles of 1.2 to 4.0, a primary particle diameter of 0.1 to 2.0 μm, and ( C) A resin package for a semiconductor light-emitting device, which is formed from a composition containing a curing catalyst.   2. The resin package for a semiconductor light-emitting device according to claim 1, wherein a central particle size of secondary particles of the (B) white pigment is 0.02 μm or more and 5 μm or less.   The resin package for a semiconductor light-emitting device according to claim 1, wherein the white pigment (B) is alumina and / or titania.   The composition forming the resin molded body contains at least one material selected from the group consisting of a filler, a diffusing agent, a fluorescent material, a reflective material, a light shielding material, an ultraviolet absorber, and an antioxidant. The resin package for a semiconductor light-emitting device according to claim 1, wherein the resin package is a semiconductor package for a semiconductor light-emitting device.   5. The resin package for a semiconductor light-emitting device according to claim 1, wherein the resin molded body is molded by a liquid injection molding (LIM) method.   6. The resin package for a semiconductor light emitting device according to claim 1, wherein the side end portion of the resin package concave portion for the semiconductor light emitting device does not have a ridge corner.   The resin package for a semiconductor light-emitting device according to claim 1, wherein a bottom surface of the base is exposed from the resin package for a semiconductor light-emitting device.   A semiconductor light emitting element is mounted on the base of the resin package for a semiconductor light emitting device according to claim 1, and the light emitting element is electrically connected to the first and second leads. The light-emitting element is sealed with a sealing material made of a composition containing as a main component at least one resin selected from the group consisting of epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, and acrylate resins. A semiconductor light-emitting device.   The sealing material is formed of a composition containing at least one material selected from the group consisting of a filler, a diffusing agent, a fluorescent material, a reflective material, an ultraviolet absorber, and an antioxidant. The semiconductor light-emitting device according to claim 8.   The semiconductor light-emitting device according to claim 8, wherein a protective element is placed on the first lead or the second lead. A method of manufacturing a resin package for a semiconductor light emitting device having a base, in which a recess having a bottom surface and a side surface is formed by integrally molding a first lead and a second lead,
The upper die and / or the lower die form a recess corresponding to the shape of the resin package, and the first lead electrode has a first inner lead portion and a first outer lead portion. The second lead electrode has a second inner lead portion and a second outer lead portion, and the first inner lead portion, the second inner lead portion corresponding to the bottom surface of the concave portion of the resin package, and A first step of sandwiching the first outer lead portion and the second outer lead portion between the upper mold and the lower mold;
In the space formed by the depressions of the upper mold and the lower mold, (A) polyorganosiloxane, (B) the primary particles have an aspect ratio of 1.2 to 4.0, and the primary particle diameter is 0.1 μm. A second step of injecting and filling a liquid thermosetting resin composition containing a white pigment of 2.0 μm or less and (C) a curing catalyst;
And at least a third step of forming a resin package by heating and curing the filled thermosetting resin, and the base is any one of the following (i) and (ii) A method for producing a resin package for a semiconductor light-emitting device by a liquid injection molding method.
(I) A method in which, in the first step, a base is inserted into the mold in addition to the first lead and the second lead, and is integrally formed. (Ii) The upper mold and / or the lower mold A method in which the mold further has a convex portion corresponding to the shape of the base, and the base is inserted into the hollow portion of the molded body formed thereby after the third step. The method for producing a resin package according to claim 11, wherein the second step is performed using a liquid injection molding machine, and the injection molding pressure is 10 kg / cm ² or more and 1200 kg / cm ² or less. .   13. The resin package according to claim 11, wherein the second step is performed using a liquid injection molding machine, and the cylinder temperature of the liquid injection molding machine is 0 ° C. or more and 100 ° C. or less. Production method.   The method for producing a resin package according to any one of claims 11 to 13, wherein the curing temperature and time at the time of liquid injection molding are 120 ° C or higher and 230 ° C or lower and 3 seconds or longer and 10 minutes or shorter, respectively. .   (A) a polyorganosiloxane used for liquid injection molding, (B) a white pigment having a primary particle aspect ratio of 1.2 to 4.0, a primary particle diameter of 0.1 to 2.0 μm, and (C) The viscosity of the liquid thermosetting resin composition containing a curing catalyst is 10 Pa · s or more and 10,000 Pa · s or less under the conditions of 25 ° C and a shear rate of 100 / s. Resin package manufacturing method. A method for manufacturing a semiconductor light-emitting device using the resin package according to claim 1,
A semiconductor light emitting element is mounted on the base of the resin package, the first electrode of the light emitting element and the first inner lead are electrically connected, and the second electrode of the light emitting element and the second electrode A first step of electrically connecting the inner lead;
A second step of charging the concave portion of the resin package with a composition containing at least one resin selected from the group consisting of an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin and an acrylate resin as a main component; ,
A third step of heating and curing the composition to seal the light emitting element;
A method of manufacturing a semiconductor light emitting device, comprising:   The method of manufacturing a semiconductor light emitting device according to claim 16, further comprising a step of placing a protective element on the first lead or the second lead before or after the first step.

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