JP2011258841A - Substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing method capable of reducing defects due to an adhesive layer that occur after carrying out steps such as a high-temperature process and a high-vacuum process.SOLUTION: A processing method of a silicon wafer 1 comprises: an adhesion step for adhering a substrate to a glass plate 2 via an adhesion layer 3; and a processing step for performing at least one of heat treatment and vacuum treatment on the silicon wafer 1 adhered to the glass plate 2. The processing method further includes a removal step, which is carried out after the adhesion step and before the processing step, for removing a portion of the adhesive layer 3 that is protruding from the periphery of the silicon wafer 1.

Description

  The present invention relates to a substrate processing method, and more particularly to a substrate processing method in which a support is attached to a substrate such as a semiconductor wafer.

  A thin semiconductor silicon chip is obtained by, for example, thinly slicing a high-purity silicon single crystal or the like into a silicon wafer, forming a predetermined circuit pattern on the surface of the silicon wafer using a photoresist, and then obtaining the semiconductor wafer. After the back surface is ground, the semiconductor wafer ground to a predetermined thickness is subjected to dicing to produce chips. In such a manufacturing process, the thinned silicon wafer itself is fragile and easily damaged, so it is necessary to reinforce it. Furthermore, it is necessary to prevent the circuit pattern formed on the silicon wafer surface from being contaminated by, for example, polishing scraps generated by grinding. Therefore, as a method of preventing damage to the silicon wafer and protecting the circuit pattern on the surface of the silicon wafer, a method in which the support is temporarily bonded to the silicon wafer with an adhesive layer and then the support is peeled off ( For example, refer to Patent Document 1 and Patent Document 2), and a method of grinding the adhesive film provided with an adhesive layer on the circuit pattern surface of the silicon wafer surface, and then peeling the adhesive film ( For example, Patent Document 3 and Patent Document 4) are known.

  In addition, in order to keep the flatness of the silicon wafer after finishing the grinding process, after applying the adhesive to the silicon wafer and before sticking it to the holding plate, the inside of the silicon wafer There is known a technique (for example, Patent Document 5) in which the adhesive is partially removed so as to be thinner than the coating thickness.

JP 7-224270 A (published on August 22, 1995) Japanese Patent Laid-Open No. 9-157628 (released on June 17, 1997) JP 2003-173993 A (released on June 20, 2003) JP 2001-279208 A (released on October 10, 2001) JP 2001-189292 A (released July 10, 2001)

  In recent years, there has been a growing demand for electronic devices that are smaller, thinner, and more functional. Among them, for example, as a wiring method between electrodes (bumps) and a circuit board in a system-in-package (SiP), a through-electrode forming technique has attracted attention instead of the wire bonding technique that has been the mainstream. The through electrode forming technique is a technique using a technique of stacking chips on which through electrodes are formed and forming bumps on the back surface of the chip. In order to apply this through electrode forming technique, it is necessary to form a through electrode on a semiconductor wafer ground to a predetermined thickness and manufacture a chip having the through electrode. For that purpose, it is necessary to go through many steps including a high temperature process and a high vacuum process.

  In the conventional processing method in which the silicon wafer is ground and thinned with the adhesive bonded to the silicon wafer and the support plate, and then undergoes processes such as a high temperature process and a high vacuum process, a high temperature process and a high vacuum process, etc. After the above process, foaming occurs in the adhesive layer, which may contaminate the vacuum chamber, etc., or when the support plate is peeled off from the silicon wafer after the high temperature process and high vacuum process, etc. It may be difficult to dissolve the layer.

  Therefore, the present invention has been made in view of the above-mentioned problems, and its purpose is to process a substrate with reduced defects caused by an adhesive layer generated after steps such as a high-temperature process and a high-vacuum process. It is to provide a method.

  In order to solve the above problems, the substrate processing method according to the present invention includes an attaching step of attaching a substrate to the support plate via an adhesive layer, and a heat treatment for the substrate attached to the support plate. And removing the adhesive layer in a portion protruding from the peripheral portion of the substrate after the pasting step and before the processing step. It is the structure which further includes a process.

  As described above, in the substrate processing method according to the present invention, between the attaching step of attaching the substrate to the support plate via the adhesive layer and the processing step of applying at least one of heat treatment and vacuum treatment. Since the portion of the adhesive layer protruding from the peripheral edge of the substrate is removed, it is possible to reduce the occurrence of problems caused by the adhesive layer, such as foaming from the adhesive layer and curing of the adhesive layer.

It is sectional drawing which shows the state of the principal part of each structure in each process in one Embodiment of this invention. It is sectional drawing which shows the state of the principal part of each structure in each process in the conventional processing method.

<1. Background of the Invention>
First, the background until the present invention is completed will be described.

  The inventors of the present invention have studied the causes of defects in which foaming occurs in the adhesive layer or it becomes difficult to dissolve the adhesive layer. These defects are caused by adhesion of the portion protruding from the peripheral edge of the substrate. It came to the thought that it originates in a chemical | medical agent layer. Therefore, before the high-temperature process and high-vacuum process are performed, the adhesive layer in the portion protruding from the peripheral edge of the substrate is removed, so that inhibition of foaming in the adhesive layer and dissolution of the adhesive layer can be reduced. I found.

  With reference to FIG. 2, a mechanism for causing a problem that foaming occurs in the adhesive layer or that it becomes difficult to dissolve the adhesive layer will be described.

  FIG. 2 is a cross-sectional view of the vicinity of the edge of the silicon wafer showing the state of each process in the conventional processing of the silicon wafer. FIG. 2 shows a state after the silicon wafer is attached to the support plate and after the vacuum plasma treatment is performed. FIG. 2A shows a state in which the silicon wafer 11 is attached to the glass plate 12 as a support plate via an adhesive layer 13. As shown in FIG. 2A, after the silicon wafer 11 is attached to the glass plate 12 via the adhesive layer 13, the peripheral portion of the adhesive layer 13 protrudes from the peripheral portion of the silicon wafer 11. It has become. Therefore, the end portion of the silicon wafer 11 is protected on the adhesive layer 13. This is because, when the silicon wafer 11 is ground, if the end portion of the silicon wafer 11 is not protected by the adhesive layer 13, the end portion of the silicon wafer 11 is likely to be broken or broken. Therefore, the end of the silicon wafer 11 is firmly fixed to the adhesive layer 13. FIG. 2B shows a state after the silicon wafer 11 shown in FIG. Thereafter, as shown in FIG. 2C, the ground silicon wafer 11 is subjected to a high-temperature process involving heat treatment or a high-vacuum process in which plasma treatment is performed in order to form a through electrode. At this time, each process is also performed on a portion (hereinafter referred to as a protruding portion) 15 protruding from the peripheral edge of the silicon wafer 11 in the adhesive layer 13. As a result, for example, as shown in FIG. 2 (d), foaming or alteration may occur from the protruding portion 15 that has been subjected to heat treatment or vacuum plasma treatment. Or the adhesive bond layer 13 of the protrusion part 15 may change in quality by each said process. For example, the adhesive layer 13 of the protruding portion 15 is cured by the alteration. Before the dicing of the silicon wafer 11, it is necessary to dissolve the adhesive layer 13 and peel the glass plate 12 from the silicon wafer 11. However, the adhesive layer 13 is hard to be dissolved when the adhesive layer 13 is cured. As a result, it becomes difficult to peel off the glass plate 12.

  Under such circumstances, the present inventors reduced the inhibition of the adhesive layer foaming and the dissolution of the adhesive layer due to the alteration by removing the adhesive layer protruding from the peripheral edge of the substrate. Has succeeded in accomplishing the present invention.

  Hereinafter, an embodiment of a substrate processing method according to the present invention will be described in detail.

<2. Substrate processing method according to the present invention>
The substrate processing method of the present invention includes an attaching step of attaching a substrate to a support plate via an adhesive layer, and a process of performing at least one of heat treatment and vacuum treatment on the substrate attached to the support plate. And a removal step of removing a portion of the adhesive layer protruding from the peripheral portion of the substrate after the attaching step and before the processing step. More specifically, it further includes a thinning step of thinning the substrate by grinding after the attaching step and before the processing step, and the thinning step is performed before or after the removing step.

  In the present embodiment, referring to FIG. 1, an example of processing for a silicon wafer (substrate) temporarily attached to a glass plate (support plate) as a support plate with an adhesive for the wafer support system will be described. However, the present invention is not limited to this.

  In this specification, the “support plate” is used to temporarily protect a silicon wafer that has been thinned by grinding so as not to crack and warp when the silicon wafer is ground. It is a support plate used in general.

  Further, in this specification, the “part protruding from the peripheral edge of the substrate” refers to a portion protruding from the peripheral edge of the substrate. All the protruding parts are “protruding parts”. In addition, “the portion protruding from the peripheral edge of the substrate” is “overlapping with the substrate, part of which is in contact with the peripheral edge of the substrate in the projection in the normal direction of the exposed surface of the substrate attached to the support plate” It can also be expressed as “the part that does not.

  FIG. 1 is a cross-sectional view of the vicinity of the edge of the silicon wafer, showing the state of the glass plate, silicon wafer, and adhesive layer in each step. It shows by (a)-(e) in process order.

[Attaching process]
The sticking step is a step of sticking the silicon wafer to the glass plate via the adhesive layer.

  In the attaching step, first, an adhesive is applied to the circuit forming surface of the silicon wafer. For example, a method using a spinner can be used for coating. As the adhesive, an adhesive compound that is soluble in a nonpolar solvent or an adhesive compound that is soluble in a highly polar solvent can be used. By using these adhesive compounds, the adhesive layer can be dissolved by a nonpolar solvent or a highly polar solvent, and the glass plate can be peeled from the silicon wafer.

  Examples of the adhesive compound exhibiting nonpolar solvent solubility include hydrocarbon resins. Examples of the hydrocarbon resin include, but are not limited to, a resin having a structural unit derived from cycloolefin, a terpene resin, and the like. Examples of the resin having a structural unit derived from cycloolefin include cycloolefin-based polymers (hereinafter sometimes referred to as “resin (A)”), but are not limited thereto.

  As resin (A), it is resin formed by superposing | polymerizing the monomer component containing a cycloolefin type monomer (a1). Specifically, a ring-opening (co) polymer of a monomer component containing a cycloolefin monomer (a1), a resin obtained by addition (co) polymerization of a monomer component containing a cycloolefin monomer (a1), etc. Is mentioned.

  Examples of the cycloolefin monomer (a1) contained in the monomer component constituting the resin (A) include bicyclic compounds such as norbornene and norbornadiene, tricyclic compounds such as dicyclopentadiene and dihydroxypentadiene, and tetracyclodone. Tetracycles such as decene, pentacycles such as cyclopentadiene trimer, heptacycles such as tetracyclopentadiene, or alkyl (methyl, ethyl, propyl, butyl, etc.) substituents of these polycycles, alkenyl (vinyl) Etc.) substituted, alkylidene (such as ethylidene) substituted, aryl (such as phenyl, tolyl, naphthyl) substituted and the like. Among these, norbornene-based monomers selected from the group consisting of norbornene, tetracyclododecene, and alkyl-substituted products thereof as shown by the following general formula (I) are preferable.

(In formula (I), R _{1 and} R ₂ are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and n is 0 or 1.)
The monomer component constituting the resin (A) may contain another monomer copolymerizable with the cycloolefin monomer (a1). For example, an alkene represented by the following general formula (II) It is preferable to also contain a monomer (a2). Examples of the alkene monomer (a2) include ethylene and α-olefin. The alkene monomer (a2) may be linear or branched.

(In formula (II), R _{3 to} R ₆ are each independently a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.)
The monomer component constituting the resin (A) is preferably 50% by mass or more of the cycloolefin monomer (a1), more preferably 60% by mass or more of the cycloolefin monomer (a1). Is good. When the cycloolefin monomer (a1) is 50% by mass or more of the whole monomer component, the adhesive strength in a high temperature environment is good.

  In addition, resin (A) polymerizes the monomer component which consists of the alkene monomer (a2) shown by the cycloolefin type monomer (a1) shown by the formula (I) mentioned above and the formula (II) mentioned above, for example. A resin that does not have a polar group, such as the formed resin, is preferable for suppressing the generation of gas at high temperatures.

  The polymerization method and polymerization conditions for polymerizing the monomer components are not particularly limited and may be appropriately set according to a conventional method.

  Examples of commercially available products that can be used as the resin (A) include “TOPAS” manufactured by Polyplastics, “APEL” manufactured by Mitsui Chemicals, “ZEONOR” and “ZEONEX” manufactured by Nippon Zeon, and JSR “ARTON” made by the manufacturer can be mentioned.

  The glass transition point (Tg) of the resin (A) is preferably 60 ° C. or higher. Particularly preferably, the glass transition point of the resin (A) is 70 ° C. or higher. When the glass transition point of the resin (A) is 60 ° C. or higher, softening of the adhesive layer can be suppressed when the adhesive composition is exposed to a high temperature environment.

  Examples of the terpene resin (hereinafter sometimes referred to as “resin (B)”) include terpene resins, terpene phenol resins, modified terpene resins, hydrogenated terpene resins, hydrogenated terpene phenol resins, and the like. Among these, hydrogenated terpene resins are preferable.

  It is important that the softening point of the resin (B) is 80 to 160 ° C. When the softening point of the resin (B) is less than 80 ° C., the adhesive composition is softened when exposed to a high temperature environment, resulting in poor adhesion. On the other hand, when the softening point of resin (B) exceeds 160 degreeC, the peeling rate at the time of peeling an adhesive composition will become slow.

  It is important that the molecular weight of the resin (B) is 300 to 3,000. When the molecular weight of the resin (B) is less than 300, the heat resistance becomes insufficient, and the amount of degassing increases in a high temperature environment. On the other hand, when the molecular weight of the resin (B) exceeds 3,000, the peeling speed when peeling the adhesive composition is slow. In addition, the molecular weight of resin (B) in this invention means the molecular weight of polystyrene conversion measured by gel permeation chromatography (GPC).

  The resin (A) and the resin (B) may be used alone or in combination. When mixed and used, the compounding ratio of the resin (A) and the resin (B) is (A) :( B) = 80: 20 to 55:45 (mass ratio). If the resin (A) is too much in this range (in other words, if the resin (B) is too little in this range), the peeling rate when peeling the adhesive composition will be slow, while the resin ( If A) is less than this range (in other words, if the resin (B) is more than this range), the adhesive composition will soften when exposed to a high temperature environment, resulting in poor adhesion. Arise.

  Examples of the adhesive compound that exhibits solubility in a highly polar solvent include, but are not limited to, collagen peptide, cellulose, polyvinyl alcohol (PVA), and starch.

  A collagen peptide can be produced by hydrolyzing a collagen molecule in which a part of the helix has been loosened and gelatinized by denaturing the collagen molecule in which polypeptide chains are spirally associated with each other by heating. As the collagen molecule, a collagen molecule derived from a mammal and a collagen molecule derived from a fish can be suitably used. Further, as the collagen molecule, commercially available ones can be used, but a collagen molecule having a dissolution rate of the produced collagen peptide in a polar solvent of 100 to 300 nm / sec is preferable, and 200 nm / sec. The collagen molecule is particularly preferred.

  What is necessary is just to determine the thickness of an adhesive bond layer according to the unevenness | corrugation of the circuit formed in the surface of a silicon wafer. The amount of adhesive applied is preferably adjusted so that the edge of the silicon wafer is fixed on the adhesive layer in a thinning process to be described later for grinding.

  Subsequently, a glass plate is affixed on the silicon wafer in which the adhesive bond layer was formed using the affixing machine. As shown in FIG. 1A, after the silicon wafer 1 is attached to the glass plate 2 via the adhesive layer 3, the peripheral portion of the adhesive layer 3 protrudes from the peripheral portion of the silicon wafer 1. It becomes. In general, the entire peripheral edge of the adhesive layer 3 protrudes from the peripheral edge of the silicon wafer 1. In other words, the entire peripheral edge portion of the silicon wafer 1 is inward of the peripheral edge portion of the adhesive layer 3. Thereby, the state where the edge part of silicon wafer 1 was firmly fixed to adhesive layer 3 can be maintained also in grinding in the thinning process mentioned below.

  In the attaching step, the method is not limited as long as the silicon wafer 1 is attached to the glass plate 2 via the adhesive layer 3. For example, an adhesive is applied to the glass plate 2, A method of attaching the surface of the silicon wafer 1 may be used.

[Thinning process]
The thinning step is a step of processing the silicon wafer 1 to a predetermined thickness by grinding the back surface (exposed surface) of the silicon wafer 1 attached to the glass plate 2 through the adhesive layer 3 with a grinder. .

  FIG. 1B shows a state after the silicon wafer 1 is ground and thinned. As shown in FIG. 1B, even after grinding, the edge of the silicon wafer 1 is protected by the adhesive layer 3, and more specifically, the adhesive layer 3 It is in an embedded state. That is, while the silicon wafer 1 is being ground, the end portion of the silicon wafer 1 is fixed by the adhesive layer 3, and the end portion does not wobble and remains stable. Thereby, it can prevent that a crack and a chip | tip generate | occur | produce in the edge part of the silicon wafer 1 in the case of a grinding process.

[Removal process]
The removing process is a process of removing the adhesive layer 3 in a portion protruding from the peripheral edge of the silicon wafer 1. Here, a case where the removing process is performed after the silicon wafer 1 is thinned by grinding will be described.

  As a method of removing the protruding adhesive layer 3, for example, a method of removing the protruding adhesive layer 3 by dissolving with a solvent, a protruding portion using a cutter and a blade is physically And a method of removing the adhesive layer 3 in a protruding portion by ashing under atmospheric pressure. Among these, from the viewpoint of strength, the method of dissolving and removing the protruding adhesive layer 3 with a solvent is preferable.

  In the method of dissolving and removing the protruding adhesive layer 3 by dissolving the adhesive layer 3 with a solvent, the solvent used is not particularly limited as long as it can dissolve the adhesive layer 3, A person skilled in the art can select appropriately according to the composition of the adhesive layer 3. For example, if the adhesive layer 3 is formed using a hydrocarbon-based adhesive, terpene solvents such as p-menthane and d-limonene can be used as the solvent. If it is formed using an acrylic or maleimide adhesive, propylene glycol monomethyl ether acetate, cyclohexanone, 2-heptanone, ethyl acetate, and methyl ethyl ketone can be used as the solvent.

  Examples of the method of bringing the solvent into contact with the protruding adhesive layer 3 include a method of supplying the solvent to the protruding adhesive layer 3 by ejecting the solvent, and a glass plate through the adhesive layer 3. And a method of immersing the silicon wafer 1 attached to 2 in a solvent.

  As a method of supplying the solvent to the protruding adhesive layer 3 by ejecting the solvent, in order to uniformly supply the solvent to the protruding adhesive layer 3, while rotating the silicon wafer 1, A method of supplying a solvent to the protruding adhesive layer 3 is preferred. As a method of supplying the solvent while rotating the silicon wafer 1, for example, a nozzle for ejecting the solvent is disposed immediately above the center of the silicon wafer 1 and the solvent is dropped on the center position of the silicon wafer 1 or after dropping. On the other hand, there is a method in which the silicon wafer 1 attached to the glass plate 2 is rotated at a high speed using a spinner and the solvent is spread over the entire peripheral edge of the silicon wafer 1 by centrifugal force. By this method, the solvent can be uniformly supplied to any part of the adhesive layer 3 protruding from the peripheral edge of the silicon wafer 1. As another method, a nozzle for ejecting the solvent is disposed immediately above the peripheral edge of the silicon wafer 1, and the solvent is applied to the glass plate 2 while being dropped just outside the peripheral edge of the silicon wafer 1. There is a method of supplying the solvent to the outside of the entire peripheral edge of the silicon wafer 1 by rotating the silicon wafer 1 using a spinner. Also by this method, the solvent can be uniformly supplied to any part of the adhesive layer 3 protruding from the peripheral edge of the silicon wafer 1. In addition, when arrange | positioning the nozzle which ejects a solvent just above the outer peripheral part of the silicon wafer 1, there is no restriction | limiting in the number of the nozzles arrange | positioned, What is necessary is just one or more.

  In the above method involving rotation of the silicon wafer and ejection of the solvent, the rotation speed of the silicon wafer 1, the flow rate of the solvent when supplying the solvent from the nozzle, and the supply time of the solvent form the adhesive layer 3. Depending on the composition of the adhesive, the thickness of the adhesive layer 3, the size of the adhesive layer 3 at the protruding portion (distance from the peripheral edge of the silicon wafer 1 at the protruding portion), the type of solvent used, and the degree of removal However, those skilled in the art can examine and determine the optimum conditions without difficulty.

  In the case of a method of dissolving and removing the protruding adhesive layer 3 by dissolving the adhesive layer 3 with a solvent, the protruding adhesive layer 3 is removed and then attached to the glass plate 2. It is preferable to dry the attached silicon wafer 1. By passing through a drying process, an unnecessary solvent and a solvent that has entered the adhesive layer 3 that is not a part to be removed can be removed.

Examples of the drying method include swing-off drying by rotating the silicon wafer 1 using a spinner or the like, drying by air blow by spraying N ₂ gas, drying by baking, drying by reduced pressure, and the like. In addition, as these drying methods, either a method using any one method alone or a method using any two or more methods in combination for drying is possible.

  An example of the removal process including the drying process will be described below. In this example, a cycloolefin copolymer obtained by copolymerizing norbornene and ethylene with a metallocene catalyst (“TOPAS (trade name) 8007” manufactured by Polyplastics Co., Ltd., norbornene: ethylene = 65: 35 (weight ratio), glass transition point. : 70 ° C., Mw: 98,200, Mw / Mn: 1.69, thermal decomposition temperature: 459 ° C.), an adhesive composition having a solid content concentration of 25% by weight dissolved in p-menthane was used as an adhesive. Yes. A silicon wafer 1 attached to the glass plate 2 through an adhesive layer 3 having a thickness of 140 μm formed by this adhesive, and the adhesive layer 3 protrudes over the entire peripheral edge of the silicon wafer 1. For the silicon wafer 1, the protruding adhesive layer 3 was removed using p-menthane. First, the silicon wafer 1 was rotated at 1500 rpm for 10 minutes while supplying the solvent at a flow rate of 40 ml / min from a nozzle for ejecting the solvent disposed just above the peripheral edge of the silicon wafer 1. Next, the supply of the solvent was stopped, and the silicon wafer 1 was dried. Drying was performed by performing baking at 100 ° C., 160 ° C., and 220 ° C. for 6 minutes in this order, and rotating the silicon wafer 1 during that time. Thereafter, the silicon wafer 1 was transferred to a cooling plate, pinned up, and slowly cooled for 3 minutes. As a result, only the adhesive layer 3 protruding from the silicon wafer 1 could be removed.

  The removal step is preferably performed after the thinning step, but may be performed before the thinning step. In this case, in order to ensure that the edge of the silicon wafer 1 is firmly fixed to the adhesive layer 3 during the thinning process, the adhesive layer 3 is bonded so that only the protruding portion is removed. It is necessary to remove the agent layer 3. Therefore, for example, it is necessary to strictly adjust the supply of the solvent that dissolves the adhesive layer 3.

[Processing process]
In the processing step, after the silicon wafer 1 is thinned, the back surface processing for forming the through electrode is performed on the silicon wafer 1, so that the silicon wafer 1 attached to the glass plate 2 via the adhesive layer 3 is processed. In this step, the processing is performed with at least one of heat treatment and vacuum treatment. Here, the heat treatment is intended to heat to 100 ° C. or higher. The vacuum treatment is intended to be dried under reduced pressure. Either treatment promotes foaming and alteration in the adhesive layer 3.

  Examples of the process involving heat treatment include a lithography process, a cleaning process, and a reflow process.

  Examples of processing involving vacuum treatment include vacuum chemical vapor deposition (plasma CVD) and vacuum plasma treatment such as etching and ashing.

  FIG. 1C shows a state after the silicon wafer 1 is ground and the adhesive layer 3 in a portion protruding from the peripheral portion of the silicon wafer 1 is removed. As shown in FIG. 1C, the adhesive layer 3 does not protrude from the peripheral edge of the silicon wafer 1 after the removing step. Therefore, as shown in FIG. 1D, for example, when the vacuum plasma treatment is performed on the silicon wafer 1, the portion of the adhesive layer 3 that directly contacts the plasma is reduced. Foaming and alteration in the adhesive layer 3 are likely to occur in the part that directly contacts the plasma. Therefore, foaming and alteration in the adhesive layer 3 can be suppressed by eliminating the portion of the adhesive layer 3 protruding from the silicon wafer 1 in the removing step. Further, even when heat treatment is performed on the silicon wafer 1, since there is no protruding portion of the adhesive layer 3 that is likely to be foamed and altered by heating, foaming and alteration in the adhesive layer 3 are suppressed. be able to.

  Therefore, in the processing method according to the present invention, it is possible to reduce defects in the adhesive layer caused by heat treatment or vacuum treatment through the removal step.

  The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

  The present invention can be suitably used for a semiconductor wafer or chip processing step that undergoes a high temperature process or a high vacuum process.

1 Silicon wafer (substrate)
2 Glass plate (support plate)
3 Adhesive Layer 11 Silicon Wafer 12 Glass Plate 13 Adhesive Layer 14 Foam 15 Projection

Claims (7)

Substrate processing including an attaching step of attaching the substrate to the support plate via an adhesive layer, and a processing step of applying at least one of heat treatment and vacuum treatment to the substrate attached to the support plate In the method
A method for processing a substrate, further comprising a removal step of removing the adhesive layer in a portion protruding from the peripheral portion of the substrate after the attaching step and before the processing step.   The said sticking process WHEREIN: By sticking the said board | substrate to the said support plate, it is made for the whole peripheral part of the said board | substrate to be inside the peripheral part of the said adhesive bond layer. Substrate processing method. After the pasting step and before the processing step, further includes a thinning step of thinning the substrate by grinding,
The substrate processing method according to claim 1, wherein the thinning step is performed before or after the removing step.   4. The substrate processing method according to claim 3, wherein the thinning step is performed before the removing step.   5. The substrate processing method according to claim 1, wherein in the removing step, the adhesive layer in the protruding portion is removed by dissolving the adhesive layer with a solvent. .   6. The substrate processing method according to claim 5, wherein in the removing step, the solvent is supplied to the adhesive layer in the protruding portion while rotating the substrate.   7. The substrate processing method according to claim 5 or 6, wherein, in the removing step, drying is performed after removing the adhesive layer in the protruding portion.

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