JP2011128330A - Laser device - Google Patents

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JP2011128330A
JP2011128330A JP2009285993A JP2009285993A JP2011128330A JP 2011128330 A JP2011128330 A JP 2011128330A JP 2009285993 A JP2009285993 A JP 2009285993A JP 2009285993 A JP2009285993 A JP 2009285993A JP 2011128330 A JP2011128330 A JP 2011128330A
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wavelength
laser
wavelength conversion
laser beam
optical element
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Hitoshi Kawai
斉 河井
Akira Tokuhisa
章 徳久
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Nikon Corp
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Nikon Corp
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<P>PROBLEM TO BE SOLVED: To provide a laser device improving the quality of a laser beam (UV light) generated by a wavelength conversion. <P>SOLUTION: The laser device 1 includes: a laser beam generator 10 to generate the laser beam Ls; a wavelength convertor 20 to convert the wavelength of the laser beam Ls to a predetermined wavelength, using induced Raman scattering; and a wavelength conversion optical system 30 to convert the wavelength of the laser beam Ls1 which has been converted by the wavelength convertor 20 to the predetermined wavelength, to a UV region wavelength. The wavelength conversion optical system 30 includes a wavelength conversion optical element 34 to perform the wavelength conversion using sum-frequency generation by non-critical phase matching. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、レーザ光発生部から射出されたレーザ光を紫外光に波長変換する波長変換部を備えたレーザ装置に関する。   The present invention relates to a laser device including a wavelength conversion unit that converts the wavelength of laser light emitted from a laser light generation unit into ultraviolet light.

波長変換を行うことにより紫外光を出力するレーザ装置としては、例えば、レチクルのパターンを基板に転写する露光装置や、各種光学式検査装置、レーザ治療装置等の光源として用いられている。この種のレーザ装置では、光増幅器により増幅された赤外波長領域のレーザ光を、複数の波長変換光学素子から成る波長変換部において順次波長変換し、最終的にＡｒＦエキシマレーザの発振波長と同じ波長である１９３［ｎｍ］の紫外光として出力するような構成のものが知られている（例えば、特許文献１を参照）。   As a laser apparatus that outputs ultraviolet light by performing wavelength conversion, for example, it is used as a light source for an exposure apparatus that transfers a reticle pattern onto a substrate, various optical inspection apparatuses, laser treatment apparatuses, and the like. In this type of laser apparatus, laser light in the infrared wavelength region amplified by an optical amplifier is sequentially wavelength-converted by a wavelength conversion unit composed of a plurality of wavelength conversion optical elements, and finally the same as the oscillation wavelength of an ArF excimer laser. A configuration that outputs light as ultraviolet light having a wavelength of 193 [nm] is known (see, for example, Patent Document 1).

特開２０００−２００７４７号公報JP 2000-200747 A

しかしながら、このような構成のレーザ装置では、波長変換によって生じるレーザ光（紫外光）の質が比較的低いものであり、紫外光への波長変換効率が低下する一因となっていた。   However, in the laser device having such a configuration, the quality of the laser light (ultraviolet light) generated by the wavelength conversion is relatively low, which has been a cause of a decrease in the efficiency of wavelength conversion to ultraviolet light.

本発明は、このような問題に鑑みてなされたものであり、波長変換によって生じるレーザ光（紫外光）の質を向上させたレーザ装置を提供することを目的とする。   The present invention has been made in view of such problems, and an object of the present invention is to provide a laser apparatus that improves the quality of laser light (ultraviolet light) generated by wavelength conversion.

このような目的達成のため、本発明に係るレーザ装置は、レーザ光を発生させるレーザ光発生部と、誘導ラマン散乱を利用して前記レーザ光の波長を所定波長に変換する波長変換器と、前記波長変換器により前記所定波長に変換された前記レーザ光の波長を紫外域の波長に変換する波長変換光学系とを備え、前記波長変換光学系が非臨界位相整合による和周波発生により波長変換を行う波長変換光学素子を有して構成される。   In order to achieve such an object, a laser device according to the present invention includes a laser light generator that generates laser light, a wavelength converter that converts the wavelength of the laser light into a predetermined wavelength using stimulated Raman scattering, A wavelength conversion optical system that converts the wavelength of the laser light converted to the predetermined wavelength by the wavelength converter into a wavelength in the ultraviolet region, and the wavelength conversion optical system converts the wavelength by sum frequency generation by non-critical phase matching. And a wavelength conversion optical element that performs the above.

なお、上述のレーザ装置において、前記レーザ光発生部は、前記レーザ光を発生させる第１の光源部と、前記第１の光源部から発生した前記レーザ光を増幅して前記波長変換器に入射させる光増幅器と、前記所定波長を有するレーザ光を発生させて前記波長変換器に入射させる第２の光源部とを有して構成されることが好ましい。   In the above laser apparatus, the laser light generation unit amplifies the laser light generated from the first light source unit that generates the laser light and the first light source unit, and enters the wavelength converter. It is preferable that the optical amplifier is configured to include a second light source unit that generates the laser light having the predetermined wavelength and causes the laser light to enter the wavelength converter.

また、上述のレーザ装置において、前記波長変換光学系は、前記所定波長を有するレーザ光が入射して、前記所定波長の１／２倍の波長を有するレーザ光を発生させる第１の波長変換光学素子と、前記所定波長を有するレーザ光および前記１／２倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／３倍の波長を有するレーザ光を発生させる第２の波長変換光学素子と、前記１／２倍の波長を有するレーザ光および前記１／３倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／５倍の波長を有するレーザ光を発生させる第３の波長変換光学素子と、前記所定波長を有するレーザ光および前記１／５倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／６倍の波長である前記紫外域の波長を有するレーザ光を発生させる第４の波長変換光学素子とを有し、前記第４の波長変換光学素子が前記非臨界位相整合により波長変換を行うことが好ましい。   Further, in the above laser apparatus, the wavelength conversion optical system includes a first wavelength conversion optical that generates a laser beam having a wavelength that is ½ times the predetermined wavelength when the laser beam having the predetermined wavelength is incident thereon. The element, a laser beam having the predetermined wavelength and a laser beam having the half wavelength are incident, and a laser beam having a wavelength that is 1/3 times the predetermined wavelength is generated by sum frequency generation. The wavelength conversion optical element, the laser light having a wavelength of 1/2 times and the laser light having a wavelength of 1/3 times are incident, and a sum frequency is generated so that the wavelength is 1/5 times the predetermined wavelength. A third wavelength converting optical element for generating the laser beam having the laser beam having the predetermined wavelength and the laser beam having the wavelength of 1/5 times incident, and generating a sum frequency to 1/6 of the predetermined wavelength. Double wavelength And a fourth optical wavelength conversion element for generating a laser beam having a wavelength of the ultraviolet region, it is preferable that the fourth optical wavelength conversion element performs wavelength conversion by the non-critical phase matching.

また、上述のレーザ装置において、前記波長変換光学系は、前記所定波長を有するレーザ光が入射して、前記所定波長の１／２倍の波長を有するレーザ光を発生させる第１の波長変換光学素子と、前記所定波長を有するレーザ光および前記１／２倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／３倍の波長を有するレーザ光を発生させる第２の波長変換光学素子と、前記１／２倍の波長を有するレーザ光および前記１／３倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／５倍の波長を有するレーザ光を発生させる第３の波長変換光学素子と、前記所定波長を有するレーザ光および前記１／５倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／６倍の波長である前記紫外域の波長を有するレーザ光を発生させる第４の波長変換光学素子とを有し、前記第２の波長変換光学素子と前記第３の波長変換光学素子との間の光路上に前記１／２倍または前記１／３倍の波長を有するレーザ光の整形を行うビーム整形素子が設けられるとともに、前記第３の波長変換光学素子が前記非臨界位相整合により波長変換を行うようにしてもよい。   Further, in the above laser apparatus, the wavelength conversion optical system includes a first wavelength conversion optical that generates a laser beam having a wavelength that is ½ times the predetermined wavelength when the laser beam having the predetermined wavelength is incident thereon. The element, a laser beam having the predetermined wavelength and a laser beam having the half wavelength are incident, and a laser beam having a wavelength that is 1/3 times the predetermined wavelength is generated by sum frequency generation. The wavelength conversion optical element, the laser light having a wavelength of 1/2 times and the laser light having a wavelength of 1/3 times are incident, and a sum frequency is generated so that the wavelength is 1/5 times the predetermined wavelength. A third wavelength converting optical element for generating the laser beam having the laser beam having the predetermined wavelength and the laser beam having the wavelength of 1/5 times incident, and generating a sum frequency to 1/6 of the predetermined wavelength. Double wavelength A fourth wavelength conversion optical element for generating laser light having a wavelength in the ultraviolet region, and the first wavelength conversion optical element between the second wavelength conversion optical element and the third wavelength conversion optical element A beam shaping element for shaping laser light having a wavelength of / 2 or 1/3 times is provided, and the third wavelength conversion optical element may perform wavelength conversion by the non-critical phase matching. Good.

本発明によれば、波長変換によって生じるレーザ光（紫外光）の質を向上させることができる。   According to the present invention, the quality of laser light (ultraviolet light) generated by wavelength conversion can be improved.

第１実施形態に係るレーザ装置の概略構成図である。It is a schematic block diagram of the laser apparatus which concerns on 1st Embodiment. 第２実施形態に係るレーザ装置の概略構成図である。It is a schematic block diagram of the laser apparatus which concerns on 2nd Embodiment. レーザ光発生部の変形例を示す図である。It is a figure which shows the modification of a laser beam generation part. レーザ光発生部の第２の変形例を示す図である。It is a figure which shows the 2nd modification of a laser beam generation part.

以下、本発明の好ましい実施形態について説明する。第１実施形態に係るレーザ装置１を図１に示しており、このレーザ装置１は、半導体デバイス製造用の露光装置、各種の光学式検査装置、レーザ治療装置などに好適に用いられるものである。第１実施形態のレーザ装置１は、赤外〜可視域の波長を有するシード光（レーザ光）Ｌｓを発生させるレーザ光発生部１０と、誘導ラマン散乱を利用してシード光Ｌｓの波長を所定波長に変換する波長変換器２０と、波長変換器２０により所定波長に変換されたシード光Ｌｓ１の波長を紫外域の波長に変換する波長変換光学系３０とを備えて構成される。   Hereinafter, preferred embodiments of the present invention will be described. A laser apparatus 1 according to the first embodiment is shown in FIG. 1, and this laser apparatus 1 is suitably used for an exposure apparatus for manufacturing semiconductor devices, various optical inspection apparatuses, a laser treatment apparatus, and the like. . The laser device 1 according to the first embodiment has a laser light generation unit 10 that generates seed light (laser light) Ls having a wavelength in the infrared to visible range, and a predetermined wavelength of the seed light Ls using stimulated Raman scattering. A wavelength converter 20 that converts the wavelength into a wavelength and a wavelength conversion optical system 30 that converts the wavelength of the seed light Ls1 converted into a predetermined wavelength by the wavelength converter 20 into a wavelength in the ultraviolet region are configured.

レーザ光発生部１０は、狭帯域化された単一波長のシード光Ｌｓを発生させる。このようなレーザ光発生部１０として、例えばＹｂ(イッテルビウム)ファイバーレーザが用いられ、本実施形態では、レーザ光発生部１０が波長λ＝１０８６[ｎｍ]となる連続波（ＣＷ）のシード光Ｌｓを発生させる。波長変換器２０は、誘導ラマン散乱(ＳＲＳ：Stimulated Raman Scattering)を利用して、レーザ光発生部１０から発生したシード光Ｌｓの波長を１０８６[ｎｍ]から１１４６[ｎｍ]にシフトさせる（変換する）。このような波長変換器２０として、例えばラマンセルが用いられる。このようにして、波長変換器２０により波長を１１４６[ｎｍ]にシフトさせたシード光Ｌｓ１を基本波として波長変換光学系３０に入射させる。   The laser beam generator 10 generates a single-band seed beam Ls having a narrow band. For example, a Yb (ytterbium) fiber laser is used as the laser beam generation unit 10. In this embodiment, the laser beam generation unit 10 has a continuous wave (CW) seed beam Ls having a wavelength λ = 1086 [nm]. Is generated. The wavelength converter 20 uses stimulated Raman scattering (SRS) to shift (convert) the wavelength of the seed light Ls generated from the laser light generator 10 from 1086 [nm] to 1146 [nm]. ). As such a wavelength converter 20, for example, a Raman cell is used. In this way, the seed light Ls1 whose wavelength is shifted to 1146 [nm] by the wavelength converter 20 is made incident on the wavelength conversion optical system 30 as a fundamental wave.

波長変換光学系３０は、非線形光学結晶や周期分極反転結晶などの波長変換光学素子を主体に構成され、波長変換器２０から出射されたシード光Ｌｓ１を波長変換光学素子に入射させ、第２高調波発生（ＳＨＧ）や和周波発生により高調波を発生させる。本実施形態の波長変換光学系３０は、４つの波長変換光学素子３１〜３４と、２つのビームスプリッター３５，３８と、２つのミラー３６，３７とを有して構成される。   The wavelength conversion optical system 30 is mainly composed of a wavelength conversion optical element such as a nonlinear optical crystal or a periodically poled crystal, and makes the seed light Ls1 emitted from the wavelength converter 20 incident on the wavelength conversion optical element, so that the second harmonic. Harmonics are generated by wave generation (SHG) or sum frequency generation. The wavelength conversion optical system 30 according to the present embodiment includes four wavelength conversion optical elements 31 to 34, two beam splitters 35 and 38, and two mirrors 36 and 37.

波長変換器２０から出射され、基本波として波長変換光学系３０に入射したシード光Ｌｓ１は、第１のビームスプリッター３５で２つの光に分岐する。第１のビームスプリッター３５で反射した基本波（波長を１１４６[ｎｍ]にシフトさせたシード光Ｌｓ１）は、第１のミラー３６で反射して第１の波長変換光学素子３１に集光入射し、一部の光が２倍波（すなわち、波長が基本波の１／２である５７３[ｎｍ]のレーザ光）に変換される。なお、２倍波発生用の波長変換光学素子３１として、例えばＬＢＯ結晶が用いられるが、ＰＰＬＮ結晶、ＰＰＬＴ結晶、ＰＰＫＴＰ結晶等を用いることもできる。   The seed light Ls1 emitted from the wavelength converter 20 and incident on the wavelength conversion optical system 30 as a fundamental wave is branched into two lights by the first beam splitter 35. The fundamental wave reflected by the first beam splitter 35 (the seed light Ls1 whose wavelength is shifted to 1146 [nm]) is reflected by the first mirror 36 and focused on the first wavelength conversion optical element 31. , A part of the light is converted into a double wave (that is, a laser beam having a wavelength of 573 [nm] which is ½ of the fundamental wave). For example, an LBO crystal is used as the wavelength conversion optical element 31 for generating the second harmonic, but a PPLN crystal, a PPLT crystal, a PPKTP crystal, or the like can also be used.

第１の波長変換光学素子３１から発生した２倍波と、第１の波長変換光学素子３１を透過した基本波は、第２の波長変換光学素子３２に集光入射し、一部の光が臨界位相整合（ＣＰＭ：Critical Phase Matching）による和周波発生により３倍波（すなわち、波長が基本波の１／３である３８２[ｎｍ]のレーザ光）に変換される。なお、３倍波発生用の波長変換光学素子３２として、例えばＢＢＯ結晶が用いられるが、ＬＢＯ結晶等を用いることもできる。   The double wave generated from the first wavelength conversion optical element 31 and the fundamental wave transmitted through the first wavelength conversion optical element 31 are condensed and incident on the second wavelength conversion optical element 32, and a part of the light is emitted. By sum frequency generation by critical phase matching (CPM), it is converted into a triple wave (that is, a laser beam having a wavelength of 382 [nm] which is 1/3 of the fundamental wave). As the wavelength conversion optical element 32 for generating the third harmonic wave, for example, a BBO crystal is used, but an LBO crystal or the like can also be used.

第２の波長変換光学素子３２から発生した３倍波と、第２の波長変換光学素子３２を透過した２倍波は、第３の波長変換光学素子３３に集光入射し、一部の光が臨界位相整合（ＣＰＭ）による和周波発生により５倍波（すなわち、波長が基本波の１／５である２２９[ｎｍ]のレーザ光）に変換される。なお、５倍波発生用の波長変換光学素子３３として、例えばＢＢＯ結晶が用いられる。   The third harmonic wave generated from the second wavelength conversion optical element 32 and the second harmonic wave transmitted through the second wavelength conversion optical element 32 are condensed and incident on the third wavelength conversion optical element 33, and a part of the light. Is converted to a fifth harmonic (that is, a laser beam of 229 [nm] whose wavelength is 1/5 of the fundamental wave) by sum frequency generation by critical phase matching (CPM). For example, a BBO crystal is used as the wavelength converting optical element 33 for generating the fifth harmonic wave.

第３の波長変換光学素子３３から発生した５倍波と、第１のビームスプリッター３５を透過して第２のミラー３７で反射した基本波は、第２のビームスプリッター３８で同軸に重ね合わされて第４の波長変換光学素子３４に集光入射し、一部の光が和周波発生により６倍波（すなわち、波長が基本波の１／６である１９１[ｎｍ]のレーザ光）に変換される。これにより、ＡｒＦエキシマレーザの発振波長（１９３[ｎｍ]）に近い１９１[ｎｍ]の波長を有する紫外光（深紫外光）Ｌｖを得ることができる。なお、６倍波発生用の波長変換光学素子３４として、例えばＣＬＢＯ結晶が用いられる。   The fifth harmonic wave generated from the third wavelength conversion optical element 33 and the fundamental wave transmitted through the first beam splitter 35 and reflected by the second mirror 37 are coaxially superimposed by the second beam splitter 38. The light is focused and incident on the fourth wavelength conversion optical element 34, and a part of the light is converted into a 6th harmonic wave (that is, a 191 [nm] laser light whose wavelength is 1/6 of the fundamental wave) by sum frequency generation. The Thereby, ultraviolet light (deep ultraviolet light) Lv having a wavelength of 191 [nm] close to the oscillation wavelength (193 [nm]) of the ArF excimer laser can be obtained. For example, a CLBO crystal is used as the wavelength conversion optical element 34 for 6th harmonic generation.

ところで、第４の波長変換光学素子３４は、非臨界位相整合（ＮＣＰＭ：Non-critical Phase Matching）による和周波発生により波長変換を行う。温度調整により光の位相整合（温度位相整合）を行う非臨界位相整合（ＮＣＰＭ）では、ウォークオフ角度（入射光軸に対する出射光軸のズレ角）が０度になるため、Ｍ2が１に近い、質の高いレーザ光（紫外光）を得ることができる。なお、Ｍ2は、レーザビーム伝播のファクタ（パラメータ）の一つであり、Ｍ2＝１のとき、理論上のガウシアンレーザービームとなる。 By the way, the fourth wavelength conversion optical element 34 performs wavelength conversion by sum frequency generation by non-critical phase matching (NCPM). In non-critical phase matching (NCPM) in which phase matching of light (temperature phase matching) is performed by adjusting the temperature, the walk-off angle (shift angle of the outgoing optical axis with respect to the incident optical axis) is 0 degree, so M 2 is 1. Close and high-quality laser light (ultraviolet light) can be obtained. M 2 is one of laser beam propagation factors (parameters). When M 2 = 1, a theoretical Gaussian laser beam is obtained.

このように、本実施形態では、波長変換器２０での誘導ラマン散乱（ＳＲＳ）により波長をシフトさせたシード光Ｌｓ１を基本波とし、非臨界位相整合（ＮＣＰＭ）による和周波発生により波長変換を行う第４の波長変換光学素子３４を有した波長変換光学系３０を用いて波長変換を行うことで、当該シード光Ｌｓ１から紫外光（深紫外光）Ｌｖを得ている。これにより、基本波の波長を任意に選べるため、紫外光を得るための（第４の）波長変換光学素子３４を非臨界位相整合（ＮＣＰＭ）で使用することが容易になる。そのため、波長変換効率が高くて、質の高いレーザ光（紫外光）Ｌｖを得ることができる。   Thus, in this embodiment, the seed light Ls1 whose wavelength is shifted by stimulated Raman scattering (SRS) in the wavelength converter 20 is used as a fundamental wave, and wavelength conversion is performed by sum frequency generation by non-critical phase matching (NCPM). By performing wavelength conversion using the wavelength conversion optical system 30 having the fourth wavelength conversion optical element 34 to be performed, ultraviolet light (deep ultraviolet light) Lv is obtained from the seed light Ls1. Thereby, since the wavelength of the fundamental wave can be arbitrarily selected, it becomes easy to use the (fourth) wavelength conversion optical element 34 for obtaining ultraviolet light in non-critical phase matching (NCPM). Therefore, high-quality laser light (ultraviolet light) Lv can be obtained with high wavelength conversion efficiency.

また、波長変換光学系３０が基本波から６倍波を発生させるように構成されることで、ＡｒＦエキシマレーザの発振波長に近い紫外光（深紫外光）Ｌｖを得ることができる。   In addition, since the wavelength conversion optical system 30 is configured to generate a sixth harmonic wave from the fundamental wave, ultraviolet light (deep ultraviolet light) Lv close to the oscillation wavelength of the ArF excimer laser can be obtained.

なお、上述の第１実施形態で示した波長変換光学系３０は、一つの例であり、波長を１１４６[ｎｍ]にシフトさせた光を基本波とし、当該基本波と５倍波から波長変換光学素子（ＣＬＢＯ結晶）を用いて６倍波である紫外光（深紫外光）を発生させる構成であればよい。   The wavelength conversion optical system 30 shown in the first embodiment described above is an example, and the light whose wavelength is shifted to 1146 [nm] is used as a fundamental wave, and wavelength conversion is performed from the fundamental wave and the fifth harmonic wave. Any structure that generates ultraviolet light (deep ultraviolet light) that is a sixth harmonic using an optical element (CLBO crystal) may be used.

次に、レーザ装置の第２実施形態について、図２を参照しながら説明する。第２実施形態に係るレーザ装置５１は、赤外〜可視域の波長を有するシード光（レーザ光）Ｌｓを発生させるレーザ光発生部６０と、誘導ラマン散乱を利用してシード光Ｌｓの波長を所定波長に変換する波長変換器７０と、波長変換器７０により所定波長に変換されたシード光Ｌｓ１の波長を紫外域の波長に変換する波長変換光学系８０とを備えて構成される。   Next, a second embodiment of the laser device will be described with reference to FIG. The laser device 51 according to the second embodiment includes a laser light generation unit 60 that generates seed light (laser light) Ls having a wavelength in the infrared to visible range, and the wavelength of the seed light Ls using stimulated Raman scattering. A wavelength converter 70 for converting to a predetermined wavelength and a wavelength conversion optical system 80 for converting the wavelength of the seed light Ls1 converted to the predetermined wavelength by the wavelength converter 70 into a wavelength in the ultraviolet region are configured.

レーザ光発生部６０は、第１実施形態のレーザ光発生部１０と同様の構成であり、本実施形態では、波長λ＝１１１８[ｎｍ]となる連続波（ＣＷ）のシード光Ｌｓを発生させる。波長変換器７０は、第１実施形態の波長変換器２０と同様の構成であり、本実施形態では、誘導ラマン散乱(ＳＲＳ)を利用して、レーザ光発生部６０から発生したシード光Ｌｓの波長を１１１８[ｎｍ]から１１７８[ｎｍ]にシフトさせる（変換する）。このようにして、波長変換器７０により波長を１１７８[ｎｍ]にシフトさせたシード光Ｌｓ１を基本波として波長変換光学系８０に入射させる。   The laser beam generator 60 has the same configuration as the laser beam generator 10 of the first embodiment. In this embodiment, the laser beam generator 60 generates a continuous wave (CW) seed beam Ls having a wavelength λ = 1118 [nm]. . The wavelength converter 70 has the same configuration as the wavelength converter 20 of the first embodiment. In this embodiment, the wavelength converter 70 uses the stimulated Raman scattering (SRS) to generate the seed light Ls generated from the laser light generator 60. The wavelength is shifted (converted) from 1118 [nm] to 1178 [nm]. In this way, the seed light Ls1 whose wavelength is shifted to 1178 [nm] by the wavelength converter 70 is made incident on the wavelength conversion optical system 80 as a fundamental wave.

波長変換光学系８０は、非線形光学結晶や周期分極反転結晶などの波長変換光学素子を主体に構成され、波長変換器７０から出射されたシード光Ｌｓ１を波長変換光学素子に入射させ、第２高調波発生（ＳＨＧ）や和周波発生により高調波を発生させる。本実施形態の波長変換光学系８０は、４つの波長変換光学素子８１〜８４と、２つのビームスプリッター８５，８８と、２つのミラー８６，８７とを有して構成される。   The wavelength conversion optical system 80 is mainly composed of a wavelength conversion optical element such as a nonlinear optical crystal or a periodically poled crystal, and makes the seed light Ls1 emitted from the wavelength converter 70 incident on the wavelength conversion optical element, so that the second harmonic. Harmonics are generated by wave generation (SHG) or sum frequency generation. The wavelength conversion optical system 80 according to the present embodiment includes four wavelength conversion optical elements 81 to 84, two beam splitters 85 and 88, and two mirrors 86 and 87.

波長変換器７０から出射され、基本波として波長変換光学系８０に入射したシード光Ｌｓ１は、第１の波長変換光学素子８１に集光入射し、一部の光が２倍波（すなわち、波長が基本波の１／２である５８９[ｎｍ]のレーザ光）に変換される。なお、２倍波発生用の波長変換光学素子８１として、例えばＬＢＯ結晶が用いられるが、ＰＰＬＮ結晶、ＰＰＬＴ結晶、ＰＰＫＴＰ結晶等を用いることもできる。   The seed light Ls1 emitted from the wavelength converter 70 and incident on the wavelength conversion optical system 80 as a fundamental wave is condensed and incident on the first wavelength conversion optical element 81, and a part of the light is doubled (that is, wavelength). Is converted to a laser beam of 589 [nm], which is ½ of the fundamental wave. For example, an LBO crystal is used as the wavelength conversion optical element 81 for generating the second harmonic, but a PPLN crystal, a PPLT crystal, a PPKTP crystal, or the like can also be used.

第１の波長変換光学素子８１から発生した２倍波と、第１の波長変換光学素子８１を透過した基本波は、第２の波長変換光学素子８２に集光入射し、一部の光が臨界位相整合（ＣＰＭ）による和周波発生により３倍波（すなわち、波長が基本波の１／３である３９３[ｎｍ]のレーザ光）に変換される。なお、３倍波発生用の波長変換光学素子８２として、例えばＢＢＯ結晶が用いられるが、ＬＢＯ結晶等を用いることもできる。   The double wave generated from the first wavelength conversion optical element 81 and the fundamental wave transmitted through the first wavelength conversion optical element 81 are condensed and incident on the second wavelength conversion optical element 82, and a part of the light is emitted. By sum frequency generation by critical phase matching (CPM), it is converted to a triple wave (that is, a laser beam having a wavelength of 393 [nm], which is 1/3 of the fundamental wave). For example, a BBO crystal is used as the wavelength conversion optical element 82 for generating the third harmonic wave, but an LBO crystal or the like can also be used.

第２の波長変換光学素子８２から発生した３倍波は、第１のビームスプリッター８５で反射したのち、第１のミラー８６および第２のビームスプリッター８８で反射する。一方、第２の波長変換光学素子８２を透過した基本波および２倍波は、第１のビームスプリッター３５を透過したのち、第２のミラー８７で反射して第２のビームスプリッター８８を透過する。すなわち、第２の波長変換光学素子８２から発生した３倍波と、第２の波長変換光学素子８２を透過した基本波および２倍波は、第１のビームスプリッター８５で分岐したのち、第２のビームスプリッター８８で同軸に重ね合わされて第３の波長変換光学素子８３に集光入射する。   The third harmonic wave generated from the second wavelength conversion optical element 82 is reflected by the first beam splitter 85 and then reflected by the first mirror 86 and the second beam splitter 88. On the other hand, the fundamental wave and the second harmonic wave transmitted through the second wavelength conversion optical element 82 are transmitted through the first beam splitter 35, then reflected by the second mirror 87 and transmitted through the second beam splitter 88. . That is, the third harmonic wave generated from the second wavelength conversion optical element 82 and the fundamental wave and the second harmonic wave transmitted through the second wavelength conversion optical element 82 are branched by the first beam splitter 85 and then the second wave. The beam splitter 88 coaxially overlaps and enters the third wavelength conversion optical element 83.

各ビームスプリッター８５，８８による光の分岐および再結合を行うのは、基本波および２倍波と、３倍波との間でビーム形状が異なるため、別々にビーム整形を行うためである。例えば、第１のミラー８６と第２のビームスプリッター８８との間の光路上にビーム整形素子として２枚のシリンドリカルレンズ（図示せず）を設けて、楕円形となった３倍波の断面形状を円形に整形することができる。また、第２のミラー８７と第２のビームスプリッター８８との間の光路上にシリンドリカルレンズ等のビーム整形素子（図示せず）を設けて、基本波および２倍波の断面形状を円形に整形するようにしてもよい。なお、第３の波長変換光学素子８３に入射する全ての光が同じビーム形状であれば、第１のビームスプリッター８５から第２のビームスプリッター８８までの各素子を省略することができる。   The splitting and recombination of light by each of the beam splitters 85 and 88 is to perform beam shaping separately because the beam shapes are different between the fundamental wave, the second harmonic wave, and the third harmonic wave. For example, a cross-sectional shape of an elliptical third harmonic wave is provided by providing two cylindrical lenses (not shown) as beam shaping elements on the optical path between the first mirror 86 and the second beam splitter 88. Can be shaped into a circle. In addition, a beam shaping element (not shown) such as a cylindrical lens is provided on the optical path between the second mirror 87 and the second beam splitter 88 to shape the sectional shapes of the fundamental wave and the second harmonic wave into a circle. You may make it do. If all the light incident on the third wavelength conversion optical element 83 has the same beam shape, each element from the first beam splitter 85 to the second beam splitter 88 can be omitted.

第３の波長変換光学素子８３に入射した２倍波および３倍波の一部は、非臨界位相整合（ＮＣＰＭ）による和周波発生により５倍波（すなわち、波長が基本波の１／５である２３６[ｎｍ]のレーザ光）に変換される。なお、５倍波発生用の波長変換光学素子８３として、例えばＣＬＢＯ結晶が用いられる。   A part of the second harmonic and the third harmonic incident on the third wavelength conversion optical element 83 is a fifth harmonic (that is, the wavelength is 1/5 of the fundamental wave) by sum frequency generation by non-critical phase matching (NCPM). Converted into a certain 236 [nm] laser beam). For example, a CLBO crystal is used as the wavelength conversion optical element 83 for generating the fifth harmonic wave.

第３の波長変換光学素子８３から発生した５倍波と、第３の波長変換光学素子８３を透過した基本波は、第４の波長変換光学素子８４に集光入射し、一部の光が臨界位相整合（ＣＰＭ）による和周波発生により６倍波（すなわち、波長が基本波の１／６である１９６[ｎｍ]のレーザ光）に変換される。これにより、ＡｒＦエキシマレーザの発振波長（１９３[ｎｍ]）に近い１９６[ｎｍ]の波長を有する紫外光（深紫外光）Ｌｖを得ることができる。なお、６倍波発生用の波長変換光学素子８４として、例えばＣＬＢＯ結晶が用いられる。   The fifth harmonic wave generated from the third wavelength conversion optical element 83 and the fundamental wave transmitted through the third wavelength conversion optical element 83 are condensed and incident on the fourth wavelength conversion optical element 84, and a part of the light is emitted. By sum frequency generation by critical phase matching (CPM), it is converted to a 6th harmonic wave (that is, a 196 [nm] laser beam whose wavelength is 1/6 of the fundamental wave). Thereby, ultraviolet light (deep ultraviolet light) Lv having a wavelength of 196 [nm] close to the oscillation wavelength (193 [nm]) of the ArF excimer laser can be obtained. For example, a CLBO crystal is used as the wavelength conversion optical element 84 for 6th harmonic generation.

本実施形態では、紫外光による素子の損傷をできるだけ回避するため、素子を介在させずに第３の波長変換光学素子８３と第４の波長変換光学素子８４とを直列に配置している。このとき、第３の波長変換光学素子８３にウォークオフがあると、第４の波長変換光学素子８４において基本波と６倍波の同軸が少しずれ、第４の波長変換光学素子８４での波長変換効率が低下してしまう。これに対し、本実施形態に係る第３の波長変換光学素子８３は、非臨界位相整合（ＮＣＰＭ）による和周波発生により波長変換を行うため、Ｍ2が１に近い、質の高いレーザ光（紫外光）を得ることができる。また、第３の波長変換光学素子８３を透過する基本波も光軸がシフトすることはない。従って、第３の波長変換光学素子８３での波長変換効率が高くなるだけでなく、臨界位相整合（ＣＰＭ）による和周波発生により波長変換を行う第４の波長変換光学素子８４での波長変換効率も高くすることができる。 In the present embodiment, the third wavelength conversion optical element 83 and the fourth wavelength conversion optical element 84 are arranged in series without any element interposed in order to avoid damage to the element due to ultraviolet light as much as possible. At this time, if there is a walk-off in the third wavelength conversion optical element 83, the fourth wavelength conversion optical element 84 has a slightly shifted coaxiality between the fundamental wave and the sixth harmonic wave, and the wavelength at the fourth wavelength conversion optical element 84. Conversion efficiency decreases. On the other hand, the third wavelength conversion optical element 83 according to the present embodiment performs wavelength conversion by generating the sum frequency by non-critical phase matching (NCPM), so that M 2 is close to 1 and high quality laser light ( UV light) can be obtained. Further, the optical axis of the fundamental wave transmitted through the third wavelength conversion optical element 83 does not shift. Therefore, not only the wavelength conversion efficiency in the third wavelength conversion optical element 83 is increased, but also the wavelength conversion efficiency in the fourth wavelength conversion optical element 84 that performs wavelength conversion by sum frequency generation by critical phase matching (CPM). Can also be high.

このように、第２実施形態によれば、第１実施形態の場合と同様の効果を得ることができる。さらには、より高い波長変換効率を得ることが可能である。   Thus, according to the second embodiment, the same effect as in the first embodiment can be obtained. Furthermore, higher wavelength conversion efficiency can be obtained.

なお、上述の第２実施形態で示した波長変換光学系８０は、一つの例であり、波長を１１７８[ｎｍ]にシフトさせた光を基本波とし、その２倍波と３倍波から波長変換光学素子（ＣＬＢＯ結晶）を用いて５倍波（および６倍波）を発生させる構成であればよい。   The wavelength conversion optical system 80 shown in the above-described second embodiment is an example, and a light whose wavelength is shifted to 1178 [nm] is used as a fundamental wave. Any structure that generates a fifth harmonic (and a sixth harmonic) using a conversion optical element (CLBO crystal) may be used.

また、上述の各実施形態において、レーザ光発生部が連続波（ＣＷ）のシード光Ｌｓを発生させているが、これに限られるものではなく、パルス光を発生させるようにしてもよい。そこで、レーザ光発生部の変形例について、図３を参照しながら説明する。図３に示すレーザ光発生部９０は、パルス状のシード光Ｌｐを発生させるレーザ光源９１と、パルス状のシード光Ｌｐを増幅する光増幅器９２とを有して構成される。   In each of the above-described embodiments, the laser light generation unit generates the continuous wave (CW) seed light Ls. However, the present invention is not limited to this, and pulsed light may be generated. Therefore, a modified example of the laser beam generator will be described with reference to FIG. The laser light generator 90 shown in FIG. 3 includes a laser light source 91 that generates a pulsed seed light Lp and an optical amplifier 92 that amplifies the pulsed seed light Lp.

レーザ光源９１は、狭帯域化された単一波長のシード光を発生させる。このようなレーザ光源９１として、例えば、発振波長１．１［μｍ］帯のＤＦＢ半導体レーザが用いられ、ペルチェ素子等を利用した温度調整器により温度制御した状態で発振させることにより、レーザ光源９１が波長λ＝１０８６[ｎｍ]（もしくは、１１１８[ｎｍ]）となる単一波長のシード光を発生させる。ＤＦＢ半導体レーザは、励起電流を波形制御することにより任意強度でＣＷ発振またはパルス発振させることができ、図３の例では、例えば、繰り返し周波数が２［ＭＨｚ］、パルス幅が１〜２［ｎｓｅｃ］となるパルス状のシード光Ｌｐを発生させる。   The laser light source 91 generates seed light having a narrow wavelength and a single wavelength. As such a laser light source 91, for example, a DFB semiconductor laser having an oscillation wavelength of 1.1 [μm] band is used, and the laser light source 91 is oscillated in a temperature controlled state by a temperature regulator using a Peltier element or the like. Generates a single-wavelength seed light having a wavelength λ = 1086 [nm] (or 1118 [nm]). The DFB semiconductor laser can perform CW oscillation or pulse oscillation with arbitrary intensity by controlling the waveform of the excitation current. In the example of FIG. 3, for example, the repetition frequency is 2 [MHz] and the pulse width is 1 to 2 [nsec]. ] To generate a pulsed seed light Lp.

光増幅器９２は、レーザ光源９１から発生したパルス状のシード光Ｌｐを増幅して波長変換器２０（もしくは、第２実施形態の波長変換器７０）に入射させる。このような光増幅器９２として、例えば、イットリビウム（Ｙｂ）・ドープ・ファイバー光増幅器（ＹＤＦＡ）が用いられる。そして、第１実施形態の場合、波長変換器２０は、光増幅器９２により増幅されたシード光Ｌｐの波長を１０８６[ｎｍ]から１１４６[ｎｍ]にシフトさせる。また、第２実施形態の場合、波長変換器７０は、光増幅器９２により増幅されたシード光Ｌｐの波長を１１１８[ｎｍ]から１１７８[ｎｍ]にシフトさせる。このようにして、波長変換器２０（もしくは、第２実施形態の波長変換器７０）により波長をシフトさせたパルス状のシード光Ｌｐ１を基本波として波長変換光学系３０（もしくは、第２実施形態の波長変換光学系８０）に入射させることができる。   The optical amplifier 92 amplifies the pulsed seed light Lp generated from the laser light source 91 and makes it incident on the wavelength converter 20 (or the wavelength converter 70 of the second embodiment). As such an optical amplifier 92, for example, an yttrium (Yb) -doped fiber optical amplifier (YDFA) is used. In the case of the first embodiment, the wavelength converter 20 shifts the wavelength of the seed light Lp amplified by the optical amplifier 92 from 1086 [nm] to 1146 [nm]. In the case of the second embodiment, the wavelength converter 70 shifts the wavelength of the seed light Lp amplified by the optical amplifier 92 from 1118 [nm] to 1178 [nm]. Thus, the wavelength conversion optical system 30 (or the second embodiment) using the pulsed seed light Lp1 whose wavelength is shifted by the wavelength converter 20 (or the wavelength converter 70 of the second embodiment) as a fundamental wave. The wavelength converting optical system 80).

なお、レーザ光源９１（ＤＦＢ半導体レーザ）の後に電気光学変調器（ＥＯＭ）等の光変調器（図示せず）を設け、レーザ光源９１（ＤＦＢ半導体レーザ）から発生したパルス状のシード光Ｌｐの一部を時間的に切り出して、光増幅器９２に入射させるようにしてもよい。このような光変調器（図示せず）は、図示省略する制御装置によりレーザ光源９１（ＤＦＢ半導体レーザ）と同期制御され、例えば、レーザ光源９１（ＤＦＢ半導体レーザ）から発生したパルス幅１〜２［ｎｓｅｃ］のシード光から、パルス幅０．３［ｎｓｅｃ］程度の光パルスが切り出して、切り出した光パルスによるシード光を光増幅器９２に入射させる。   An optical modulator (not shown) such as an electro-optic modulator (EOM) is provided after the laser light source 91 (DFB semiconductor laser), and the pulsed seed light Lp generated from the laser light source 91 (DFB semiconductor laser) is supplied. A part may be cut out in time and made incident on the optical amplifier 92. Such an optical modulator (not shown) is synchronously controlled with a laser light source 91 (DFB semiconductor laser) by a control device (not shown). For example, pulse widths 1 to 2 generated from the laser light source 91 (DFB semiconductor laser) are controlled. An optical pulse having a pulse width of about 0.3 [nsec] is cut out from the [nsec] seed light, and seed light based on the cut out optical pulse is incident on the optical amplifier 92.

また、より狭帯域化されたパルス状のシード光Ｌｐ１を得るため、図４に示すように、レーザ光源９１および光増幅器９２によるパルス状のシード光Ｌｐに加えて、第２のレーザ光源９３（ＤＦＢ半導体レーザ）により、シフト後の（１次ストークス光の）波長λ´＝１１４６[ｎｍ]（もしくは、１１７８[ｎｍ]）を有するパルス状のレーザ光Ｌｐ´を発生させて波長変換器２０（もしくは、第２実施形態の波長変換光学系８０）に入射させるようにしてもよい。このようにすれば、波長変換器２０（もしくは、第２実施形態の波長変換光学系８０）での誘導ラマン散乱(ＳＲＳ)により、レーザ光源９１および光増幅器９２からのシード光Ｌｐがポンプ光となって第２のレーザ光源９３からのレーザ光Ｌｐ´が増幅されるため、より狭帯域化された波長（１１４６[ｎｍ]もしくは１１７８[ｎｍ]）を有するパルス状のシード光Ｌｐ１を得ることができる。   Further, in order to obtain a narrower pulsed seed light Lp1, as shown in FIG. 4, in addition to the pulsed seed light Lp by the laser light source 91 and the optical amplifier 92, the second laser light source 93 ( The DFB semiconductor laser) generates pulsed laser light Lp ′ having a wavelength λ ′ = 1146 [nm] (or 1178 [nm]) after the shift (first-order Stokes light) to generate the wavelength converter 20 ( Or you may make it inject into the wavelength conversion optical system 80) of 2nd Embodiment. In this way, the seed light Lp from the laser light source 91 and the optical amplifier 92 is converted into pump light by stimulated Raman scattering (SRS) in the wavelength converter 20 (or the wavelength conversion optical system 80 of the second embodiment). Thus, since the laser beam Lp ′ from the second laser light source 93 is amplified, a pulsed seed beam Lp1 having a narrower wavelength (1146 [nm] or 1178 [nm]) can be obtained. it can.

１ レーザ装置（第１実施形態）
１０ レーザ光発生部 ２０ 波長変換器
３０ 波長変換光学系
３１ 第１の波長変換光学素子 ３２ 第２の波長変換光学素子
３３ 第３の波長変換光学素子 ３４ 第４の波長変換光学素子
５１ レーザ装置（第２実施形態）
６０ レーザ光発生部 ７０ 波長変換器
８０ 波長変換光学系
８１ 第１の波長変換光学素子 ８２ 第２の波長変換光学素子
８３ 第３の波長変換光学素子 ８４ 第４の波長変換光学素子
９０ レーザ光発生部（変形例）
９１ レーザ光源（第１の光源部） ９２ 光増幅器
９３ 第２のレーザ光源（第２の光源部） 1 Laser device (first embodiment)
DESCRIPTION OF SYMBOLS 10 Laser light generation part 20 Wavelength converter 30 Wavelength conversion optical system 31 1st wavelength conversion optical element 32 2nd wavelength conversion optical element 33 3rd wavelength conversion optical element 34 4th wavelength conversion optical element 51 Laser apparatus ( Second embodiment)
DESCRIPTION OF SYMBOLS 60 Laser light generation part 70 Wavelength converter 80 Wavelength conversion optical system 81 1st wavelength conversion optical element 82 2nd wavelength conversion optical element 83 3rd wavelength conversion optical element 84 4th wavelength conversion optical element 90 Laser light generation (Modification)
91 Laser light source (first light source unit) 92 Optical amplifier 93 Second laser light source (second light source unit)

Claims (4)

レーザ光を発生させるレーザ光発生部と、
誘導ラマン散乱を利用して前記レーザ光の波長を所定波長に変換する波長変換器と、
前記波長変換器により前記所定波長に変換された前記レーザ光の波長を紫外域の波長に変換する波長変換光学系とを備え、
前記波長変換光学系が非臨界位相整合による和周波発生により波長変換を行う波長変換光学素子を有して構成されることを特徴とするレーザ装置。 A laser light generator for generating laser light;
A wavelength converter that converts the wavelength of the laser light into a predetermined wavelength using stimulated Raman scattering;
A wavelength conversion optical system that converts the wavelength of the laser light converted to the predetermined wavelength by the wavelength converter into a wavelength in the ultraviolet region,
A laser apparatus, wherein the wavelength conversion optical system includes a wavelength conversion optical element that performs wavelength conversion by generating a sum frequency by non-critical phase matching. 前記レーザ光発生部は、
前記レーザ光を発生させる第１の光源部と、
前記第１の光源部から発生した前記レーザ光を増幅して前記波長変換器に入射させる光増幅器と、
前記所定波長を有するレーザ光を発生させて前記波長変換器に入射させる第２の光源部とを有して構成されることを特徴とする請求項１に記載のレーザ装置。 The laser beam generator is
A first light source unit for generating the laser light;
An optical amplifier that amplifies the laser light generated from the first light source unit and makes it incident on the wavelength converter;
The laser apparatus according to claim 1, further comprising: a second light source unit configured to generate a laser beam having the predetermined wavelength and make the laser beam incident on the wavelength converter. 前記波長変換光学系は、
前記所定波長を有するレーザ光が入射して、前記所定波長の１／２倍の波長を有するレーザ光を発生させる第１の波長変換光学素子と、
前記所定波長を有するレーザ光および前記１／２倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／３倍の波長を有するレーザ光を発生させる第２の波長変換光学素子と、
前記１／２倍の波長を有するレーザ光および前記１／３倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／５倍の波長を有するレーザ光を発生させる第３の波長変換光学素子と、
前記所定波長を有するレーザ光および前記１／５倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／６倍の波長である前記紫外域の波長を有するレーザ光を発生させる第４の波長変換光学素子とを有し、
前記第４の波長変換光学素子が前記非臨界位相整合により波長変換を行うことを特徴とする請求項１または２に記載のレーザ装置。 The wavelength conversion optical system is:
A first wavelength conversion optical element that receives a laser beam having the predetermined wavelength and generates a laser beam having a wavelength that is ½ times the predetermined wavelength;
Second wavelength conversion in which the laser beam having the predetermined wavelength and the laser beam having the half wavelength are incident to generate laser light having a wavelength that is 1/3 times the predetermined wavelength by sum frequency generation An optical element;
A laser beam having a wavelength that is 1/2 times the wavelength and a laser beam having a wavelength that is 1/3 times the incident light is incident to generate a laser beam having a wavelength that is 1/5 times the predetermined wavelength by sum frequency generation. 3 wavelength converting optical elements;
The laser light having the predetermined wavelength and the laser light having the wavelength of 1/5 times incident, and the laser light having the wavelength in the ultraviolet region that is 1/6 times the predetermined wavelength by sum frequency generation A fourth wavelength converting optical element to be generated,
The laser device according to claim 1, wherein the fourth wavelength conversion optical element performs wavelength conversion by the non-critical phase matching. 前記波長変換光学系は、
前記所定波長を有するレーザ光が入射して、前記所定波長の１／２倍の波長を有するレーザ光を発生させる第１の波長変換光学素子と、
前記所定波長を有するレーザ光および前記１／２倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／３倍の波長を有するレーザ光を発生させる第２の波長変換光学素子と、
前記１／２倍の波長を有するレーザ光および前記１／３倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／５倍の波長を有するレーザ光を発生させる第３の波長変換光学素子と、
前記所定波長を有するレーザ光および前記１／５倍の波長を有するレーザ光が入射して、和周波発生により前記所定波長の１／６倍の波長である前記紫外域の波長を有するレーザ光を発生させる第４の波長変換光学素子とを有し、
前記第２の波長変換光学素子と前記第３の波長変換光学素子との間の光路上に前記１／２倍または前記１／３倍の波長を有するレーザ光の整形を行うビーム整形素子が設けられるとともに、前記第３の波長変換光学素子が前記非臨界位相整合により波長変換を行うことを特徴とする請求項１または２に記載のレーザ装置。 The wavelength conversion optical system is:
A first wavelength conversion optical element that receives a laser beam having the predetermined wavelength and generates a laser beam having a wavelength that is ½ times the predetermined wavelength;
Second wavelength conversion in which the laser beam having the predetermined wavelength and the laser beam having the half wavelength are incident to generate laser light having a wavelength that is 1/3 times the predetermined wavelength by sum frequency generation An optical element;
A laser beam having a wavelength that is 1/2 times the wavelength and a laser beam having a wavelength that is 1/3 times the incident light is incident to generate a laser beam having a wavelength that is 1/5 times the predetermined wavelength by sum frequency generation. 3 wavelength converting optical elements;
The laser light having the predetermined wavelength and the laser light having the wavelength of 1/5 times incident, and the laser light having the wavelength in the ultraviolet region that is 1/6 times the predetermined wavelength by sum frequency generation A fourth wavelength converting optical element to be generated,
A beam shaping element for shaping the laser beam having the wavelength of 1/2 or 1/3 times is provided on the optical path between the second wavelength conversion optical element and the third wavelength conversion optical element. The laser device according to claim 1, wherein the third wavelength conversion optical element performs wavelength conversion by the non-critical phase matching.
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