JP2011124341A - Semiconductor device and semiconductor module equipped with the same, method of manufacturing semiconductor device, and method of manufacturing semiconductor module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be made more compact and thinner than a conventional semiconductor device requiring an output material for outputting a signal to the outside, and to provide a semiconductor module equipped with the semiconductor device, a method of manufacturing a semiconductor device, and a method of manufacturing a semiconductor module. <P>SOLUTION: The semiconductor device 8 includes a semiconductor chip 1 and a bonding wire 2 wherein the semiconductor chip 1 is sealed with a sealing resin 5 for packaging, and the cross section 7 of the bonding wire 2 is exposed on the side surface of the semiconductor device 8. Since the bonding wire 2 serves as an external output terminal, a signal can be output from the semiconductor chip 1 to the outside without passing through an output material for outputting a signal to the outside. Since the output material is not required, the semiconductor device can be made more compact and thinner than a conventional semiconductor device requiring an output material. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device including a semiconductor chip. Moreover, it is related with the semiconductor module provided with such a semiconductor device. Furthermore, the present invention relates to a method for manufacturing the semiconductor device and the semiconductor module described above.

  Conventionally, semiconductor modules on which packaged semiconductor devices are mounted are widely used. The packaging of a semiconductor device is performed by packaging a semiconductor chip.

  FIG. 13 is a cross-sectional view of a conventional semiconductor module 100 having a COB (chip on board) structure in which the semiconductor chip 101 is directly mounted on a module substrate (module substrate) 114 which is a mounting substrate.

  FIG. 14 is a cross-sectional view of a conventional semiconductor module 110 having a structure in which a semiconductor device in which a semiconductor chip 101 is packaged with a TSOP (thin small out-line package) structure is mounted using solder 128.

  FIG. 15 is a cross-sectional view of a conventional semiconductor module 120 having a structure in which a semiconductor device in which a semiconductor chip 101 is packaged by CSP (chip size package) is mounted using solder 128.

  FIG. 16 is a cross-sectional view of a conventional semiconductor module 130 having a structure in which a semiconductor device in which a semiconductor chip is packaged in a leadless carrier structure (that is, using a leadless carrier 129) is mounted using solder 128.

  The semiconductor module 140 of FIG. 17 corresponds to FIG. 4 of Patent Document 1, and is a semiconductor module that takes measures against the problems in the semiconductor modules 110, 120, and 130. A semiconductor module 150 in FIG. 18 corresponds to FIG. 2 of Patent Document 1, and is a semiconductor module in which measures for the problems in the semiconductor modules 110, 120, and 130 are taken.

  FIG. 17 is a cross-sectional view of a conventional semiconductor module 140 having a structure in which a semiconductor device packaged with the leadless carrier structure of FIG.

  FIG. 18 shows a conventional semiconductor device packaged with the leadless carrier structure shown in FIG. 16 having a structure in which the side surface of the cut-out module substrate 133 which is a mounting substrate and the side surface of the package are electrically connected by a conductive rubber connector 132. 2 is a cross-sectional view of a semiconductor module 150. FIG.

Japanese Patent Laid-Open No. 4-165692 (published on June 11, 1992)

  In recent semiconductor modules (modules for semiconductor devices), the trend toward miniaturization and thinning is remarkable. In the COB structure of FIG. 13 which has the most thinning effect among the prior arts, the semiconductor chip 101 is directly mounted on the module substrate 114 and then sealed with the sealing resin 105, so that the thinning is possible. It is.

  However, the operation security inspection after mounting the semiconductor chip 101 must be performed after the semiconductor chip 101 is mounted on the module substrate 114. For this reason, when a defect occurs when the semiconductor chip 101 is mounted, the module substrate 114 on which the semiconductor chip 101 is mounted must be discarded, which is economically disadvantageous.

  Further, when other electronic components other than the semiconductor chip 101 are mounted on the module substrate 114, the other electronic components must be discarded together, which is further disadvantageous economically.

  Therefore, a method of packaging the semiconductor chip 101, completing the semiconductor device 101, and mounting a device whose operation is guaranteed after the operation security inspection (that is, the method of FIGS. 14 to 16) is the mainstream.

  FIG. 14 shows a semiconductor module 110 in which a semiconductor device having a TSOP structure as a semiconductor chip is connected to a module substrate 114 by mounting using solder 128. The semiconductor module 110 has two problems.

  Regarding the first problem, the semiconductor module 110 is a semiconductor module that outputs a signal line of the semiconductor chip 101 to the outside via the lead frame 127. For this reason, the subject that an external size enlarges by the design restrictions of the lead frame 127 arises.

  Regarding the second problem, in the semiconductor module 110, the thickness of the semiconductor chip 101, the thickness of the semiconductor chip adhesive 126 positioned under the semiconductor chip 101, the thickness of the lead frame 127, the thickness of the sealing resin 105, and the solder 128. The thickness of the module is added, and the total module thickness Td is increased.

  As described above, since the semiconductor module 110 of FIG. 14 has the first and second problems, it is disadvantageous in terms of miniaturization and thickness reduction. In addition, when a mounting failure of the semiconductor device occurs in the semiconductor module 110, the mounting is performed using the solder 128, so that there is a problem that repair is difficult.

  FIG. 15 shows a semiconductor module 120 in which a semiconductor device having a CSP structure intended to be further reduced in size and thickness than that in FIG. 14 is connected to a module substrate 114 by mounting using solder 128 as in FIG. In the semiconductor device in the semiconductor module 120, the outer size and the total thickness Te of the module are considerably reduced as compared with the semiconductor device having the TSOP package structure of FIG.

  However, the semiconductor module 120 has two problems. The first problem is that the outer size is limited due to the design constraints of the printed circuit board 107 used as the external output means of the semiconductor chip 101. Regarding the second problem, in terms of thickness, the thickness of the semiconductor chip 101, the thickness of the printed circuit board 107, and the thickness of the solder 128 are added to the thickness of the semiconductor chip 101. There arises a problem that the total thickness Te of the module is increased.

  In the semiconductor module 120, the portion where the solder 128 is mounted is the bottom surface of the semiconductor device. For this reason, since the mounting state cannot be visually confirmed, there is a problem that it is difficult to find mounting defects. As with the semiconductor module 110, there is a problem that repair is difficult when a mounting failure of the semiconductor device occurs.

  The semiconductor module 130 of FIG. 16 has two problems. The first problem is that since the leadless carrier 129 exists also on the side surface of the semiconductor device, the outer size becomes larger than that of the semiconductor device having the CSP structure of FIG. The second problem is that the thickness of the semiconductor chip adhesive 126 positioned under the semiconductor chip 101 and the thickness of the leadless carrier 129 are added to the thickness of the semiconductor chip 101.

  Further, since the solder 128 is located on the side surface of the semiconductor device, it is easy to visually confirm the mounting state, but repair when a mounting failure occurs is the same as the semiconductor modules 110 and 120 in FIGS. There is also a problem that it is difficult.

  The semiconductor module 140 in FIG. 17 has the following problems. That is, in the semiconductor module 140, the thickness of the conductive rubber connector 131 necessary for the lower part of the semiconductor device and the thickness of the fixing jig 135 for fixing the semiconductor device are added to the thickness of the semiconductor chip 101. For this reason, the problem that the module total thickness Tg will become thicker than the module total thickness Tf in the semiconductor module 130 of FIG.

  The semiconductor module 150 in FIG. 18 solves the problem of thickness that occurs in the semiconductor module 140 in FIG. The leadless carrier structure semiconductor device mounted in the semiconductor module 150 of FIG. 18 is the thinnest among the semiconductor devices shown in FIGS. However, the total thickness of the module depends on the thickness of the semiconductor device used for the module. For this reason, in order to further reduce the thickness of the module, it is necessary to further reduce the thickness of the semiconductor device itself.

  However, recently, the trend toward thinning of the module substrate itself is remarkable. Therefore, the semiconductor module 150 in FIG. 18 has a problem that it is difficult to cut out a thin module substrate into a rectangular shape and dispose the conductive rubber connector 132 on the inner side surface.

  Further, all the above-described conventional semiconductor devices are bonded by bonding the bonding wire 102 bonded to the semiconductor chip 101 to the output material such as the lead frame 127 or the printed circuit board 107 in order to output the signal line of the semiconductor chip 101 to the outside. A connection method is adopted. For this reason, all the conventional semiconductor devices described above have a problem that, as the number of terminals of the semiconductor chip 101 increases (semiconductor chip 101 ′), the outer size of the semiconductor device 170 increases as shown in FIG. ing.

  The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to enable a reduction in size and thickness as compared with a conventional semiconductor device that requires an output material for outputting a signal to the outside. An object of the present invention is to provide a semiconductor device, a semiconductor module including the semiconductor device, a semiconductor device manufacturing method, and a semiconductor module manufacturing method.

  In order to solve the above problems, a semiconductor device of the present invention is a semiconductor device that includes a semiconductor chip and a bonding wire, and is packaged by sealing the semiconductor chip with a resin. And a cross section of the bonding wire is exposed.

  According to the invention, by using the bonding wire as an external output terminal, a signal can be output from the semiconductor chip to the outside without using an output material for outputting a signal to the outside. Since no output material is required, it is possible to reduce the size and thickness of a conventional semiconductor device that requires an output material.

  Further, since no output material is required, the cost of the semiconductor device can be reduced, and development of the output material is also unnecessary. Therefore, the development period of the semiconductor device and the development period of the semiconductor module on which the semiconductor device is mounted can be shortened.

  In the semiconductor device, an obliquely rising portion of the bonding wire may be cut, and the shape of the cross section may be an ellipse.

  As a result, the area of the cross-section exposed as a side surface of the semiconductor device after cutting and used as a terminal can be secured larger than the area of the “cross-section of the bonding wire”. The “cross section of the bonding wire” here is a cross section of the bonding wire when the bonding wire that has been straightly stretched is cut perpendicularly to the stretching direction. If the “cross section of the bonding wire” is a circle, the shape of the cross section is an ellipse. Since the area of the cross section can be made larger than the area of the “cross section of the bonding wire”, more reliable electrical connection is possible.

  In the semiconductor device, the bonding wire may include gold or aluminum.

  A semiconductor module according to the present invention includes any one of the above semiconductor devices, a module substrate, a conductive rubber connector for connecting the bonding wire and the module substrate, and a conductive rubber connector fixing means fixed on the module substrate. The semiconductor device is pressed by the conductive rubber connector fixed by the conductive rubber connector fixing means. Therefore, the total module thickness in the semiconductor module including any one of the semiconductor devices can be made thinner than the total module thickness in the conventional semiconductor module, and can be reduced in size and thickness.

  Further, in the semiconductor module, the conductive rubber connector is connected and fixed by pressing the semiconductor device. Therefore, even when a defect (failure) of the semiconductor device occurs, it is possible to easily repair (repair) only the semiconductor device.

  In the semiconductor module, the conductive rubber connector may be a conductive rubber connector in which insulating layers and conductive layers are alternately stacked, and the conductive layer and the bonding wire may be electrically connected. Thereby, it is possible to connect the said cross section and the terminal of the said module board | substrate in the state which maintained the insulation state between two adjacent terminals.

  In the semiconductor module, the width of the surface of the conductive layer in contact with the bonding wire is shorter than the interval between the two adjacent bonding wires. As a result, if the distance of at least the width is secured as the distance, the cross section and the terminal on the module board (or the terminal on the hollow module board) are in a state of ensuring insulation between adjacent terminals. It is possible to connect.

  In the semiconductor module, the width of the insulating layer is shorter than the width of the cross section. As a result, even if the cross section of the insulating layer overlaps the cross section of the insulating layer by using a bonding wire having a diameter larger than the width of the cross section, the semiconductor device and the conductive rubber are used. Conductivity with the connector can be maintained.

  In the semiconductor module, the conductive layer and the insulating layer are rectangular parallelepipeds having the same shape of the surfaces to be stacked, and are parallel to the surface to be stacked in the space formed by the conductive rubber connector fixing means and the module substrate. The shape of the surface is a shape that matches the shape of the conductive rubber connector, the shape of the surface to be laminated is a rectangle, and the shape of the surface parallel to the surface to be laminated of the space is also a rectangle. Good.

  Thereby, the conductive rubber connector can be stably fixed on the module substrate. Therefore, the reliability of the semiconductor module can be improved.

  In the semiconductor module, the conductive layer and the insulating layer are triangular prisms having the same shape of the surfaces to be stacked, and are parallel to the surfaces to be stacked in the space formed by the conductive rubber connector fixing means and the module substrate. The shape of the surface is a shape that matches the shape of the conductive rubber connector, the shape of the surface to be laminated is a triangle, and the shape of the surface parallel to the surface to be laminated of the space is also a triangle. Good.

  Thereby, the thickness of the fixing means can be sufficiently secured, and the conductive rubber connector can be fixed on the module substrate more firmly and stably. Therefore, the reliability of the semiconductor module can be further improved.

  In any one of the above semiconductor modules, the module substrate may be a module substrate that has been cut out in advance to the outer size of the semiconductor device. As a result, a part of the semiconductor device can be embedded in the hollowed out portion.

  The semiconductor device manufacturing method of the present invention is any one of the above semiconductor device manufacturing methods, wherein the bonding wire is temporarily fixed on the semiconductor chip fixing material for temporarily fixing the semiconductor chip. A step of mounting a frame, a step of mounting the semiconductor chip on the semiconductor chip fixing material, a step of connecting the semiconductor chip and the wire fixing frame with the bonding wires, and a sealing resin Sealing, a step of separating the portion to be the semiconductor device and a removal portion, and a step of removing the chip fixing material attached to the bottom surface of the semiconductor chip in the portion to be the semiconductor device .

  According to the above invention, the semiconductor device of the present invention can be manufactured. According to the invention, the wire fixing frame is finally removed. For this reason, even if the wire bonding to the wire fixing frame is in contact with the adjacent wire or wire ball, it does not have to be in contact with the boundary that separates the portion that becomes the semiconductor device and the removal portion. Therefore, wire bonding in a narrower range than before is possible without being limited by the design constraints of the output material in the prior art.

  In the manufacturing method of the semiconductor device, the wire fixing frame may have a lattice shape, and the semiconductor chip may be mounted on the semiconductor chip fixing material so as to fit in the lattice. Thereby, the semiconductor chip 1 can be mounted efficiently.

  In the semiconductor device manufacturing method, the semiconductor chip fixing material may be a Kapton tape. In the step of connecting with the bonding wire and the step of sealing with the sealing resin, heat treatment is generally performed. For this reason, the semiconductor chip fixing material is preferably a heat-resistant tape in consideration of heat resistance and easy removal at the final stage of production. Therefore, Kapton tape is preferably used.

  In the semiconductor device manufacturing method, the wire fixing frame may include gold or aluminum.

  The semiconductor module manufacturing method of the present invention is any one of the above semiconductor module manufacturing methods, the step of fixing the conductive rubber connector fixing means on the module substrate, the module substrate and the conductive rubber. A step of fitting the conductive rubber connector into a space formed between the connector fixing means and forming an exposed portion of the conductive rubber connector; and a step of pushing the semiconductor device toward the space where the semiconductor device is mounted; including.

  According to the above invention, the semiconductor module of the present invention can be manufactured. According to the invention, the exposed portion of the conductive rubber connector is pushed into the space to be formed, and the semiconductor device is mounted in a state where the exposed portion of the conductive rubber connector is crushed. The Thereby, the semiconductor device after mounting can be fixed by pressure contact with the exposed conductive rubber connector exposed portion.

  As described above, the semiconductor device of the present invention includes a semiconductor chip and a bonding wire, and is packaged by sealing the semiconductor chip with a resin, and the bonding is performed on the side surface of the semiconductor device. The cross section of the wire is exposed.

  Therefore, a semiconductor device that can be made smaller and thinner than a conventional semiconductor device that requires an output material for outputting a signal to the outside, a semiconductor module including the semiconductor device, a method for manufacturing the semiconductor device, and a semiconductor module There is an effect of providing the manufacturing method.

BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing of the semiconductor device which concerns on embodiment of this invention, (a) is sectional drawing of the semiconductor device which concerns on embodiment of this invention, (b) is shown with the broken line in the semiconductor device shown to (a). It is a partial enlarged view, (c) is a plan view of a semiconductor device according to an embodiment of the present invention, (d) is a plan view of a conventional semiconductor device whose external size is compared with the semiconductor device of (c). (E) is a plan view of a semiconductor device provided with a semiconductor chip having an increased number of pins with respect to the semiconductor chip of (c), and (f) is compared with the semiconductor device of (e) in external size. It is a top view of the conventional semiconductor device. (A) is sectional drawing of the semiconductor module which concerns on embodiment of this invention, (b) is a perspective view of the conductive rubber connector which laminated | stacked the conductive layer and the insulating layer based on embodiment of this invention alternately. It is. (A) is sectional drawing of the other semiconductor module which concerns on embodiment of this invention, (b) is an enlarged view of the part shown with a broken line in the semiconductor module shown to (a), (c) is (a) FIG. 4 is a perspective view of a portion indicated by a broken line in the semiconductor module shown in FIG. 4B when viewed from above, and (d) is a cross-sectional width of the conductive layer, a distance between two adjacent bonding wires, and a width of the insulating layer It is a figure which shows the relationship between the width of a wire cross section. (A) is a cross-sectional enlarged view which shows the modification of the part shown with a broken line in the semiconductor module shown to Fig.3 (a), (b) is a perspective view of the other conductive rubber connector which concerns on embodiment of this invention. It is. It is explanatory drawing of the manufacturing method of the semiconductor device which concerns on embodiment of this invention, (a)-(g) is sectional drawing which shows the manufacturing method of the semiconductor device which concerns on embodiment of this invention, (h) is a grating | lattice It is a top view which shows a shape wire fixing frame. It is explanatory drawing of the manufacturing method of the semiconductor module which concerns on embodiment of this invention, (a)-(f) is sectional drawing which shows the manufacturing method of the semiconductor module which concerns on embodiment of this invention. It is sectional drawing which shows that the module total thickness in the semiconductor module which concerns on embodiment of this invention is thinner than the module total thickness in the conventional semiconductor module of FIG. It is sectional drawing which shows that the module total thickness in the semiconductor module which concerns on embodiment of this invention is thinner than the module total thickness in the conventional semiconductor module of FIG. It is sectional drawing which shows that the module total thickness in the semiconductor module which concerns on embodiment of this invention is thinner than the module total thickness in the conventional semiconductor module of FIG. It is sectional drawing which shows that the module total thickness in the semiconductor module which concerns on embodiment of this invention is thinner than the module total thickness in the conventional semiconductor module of FIG. It is sectional drawing which shows that the module total thickness in the semiconductor module which concerns on embodiment of this invention is thinner than the module total thickness in the conventional semiconductor module of FIG. It is sectional drawing which shows that the module total thickness in the other semiconductor module which concerns on embodiment of this invention is thinner than the module total thickness in the conventional semiconductor module of FIG. 1 is a cross-sectional view of a conventional semiconductor module 100 having a COB (chip on board) structure in which a semiconductor chip is directly mounted on a module substrate which is a mounting substrate. It is sectional drawing of the conventional semiconductor module which has the structure which mounted the semiconductor device which packaged the semiconductor chip by TSOP (thin small out-line package) structure using solder. It is sectional drawing of the conventional semiconductor module which has the structure which mounted the semiconductor device which packaged the semiconductor chip by CSP (chip sized package) using solder. It is sectional drawing of the conventional semiconductor module which has the structure which mounted the semiconductor device which packaged the semiconductor chip with the leadless carrier structure using solder. FIG. 17 is a cross-sectional view of a conventional semiconductor module having a structure in which a semiconductor device packaged with the leadless carrier structure of FIG. 16 is mounted by conduction from the bottom surface of the package with a conductive rubber connector. FIG. 17 is a cross-sectional view of a conventional semiconductor module having a structure in which a side surface of a cut-out module substrate that is a mounting substrate and a side surface of a package are connected by a conductive rubber connector in the semiconductor device packaged with the leadless carrier structure of FIG. is there. It is a top view which shows that the external size of a semiconductor device becomes large, so that the terminal quantity of a semiconductor chip increases.

  An embodiment of the present invention will be described below with reference to FIGS.

  FIG. 1 is an explanatory diagram of the semiconductor device 8 according to the present embodiment. FIG. 1A is a cross-sectional view of the semiconductor device 8 according to the present embodiment, and FIG. 1B is an enlarged view of a portion indicated by a broken line B in the semiconductor device 8 shown in FIG. . FIG. 1C is a plan view of the semiconductor device 8 according to the present embodiment. FIG. 1D is a plan view of a conventional semiconductor device 160 whose outer size is compared with that of the semiconductor device 8 of FIG. FIG. 1E is a plan view of a semiconductor device 8 ′ including a semiconductor chip 1 ′ having a larger number of pins than the semiconductor chip 1 of FIG. FIG. 1F is a plan view of a conventional semiconductor device 170 whose outer size is compared with that of the semiconductor device 8 ′ of FIG.

  The conventional semiconductor device 160 in FIG. 1D is the semiconductor device 160 used in the semiconductor module 120 in FIG. 15, and the semiconductor chip 101 is connected to the terminal region pL on the printed circuit board 107 by the bonding wire 102. ing.

  The conventional semiconductor device 170 in FIG. 1F is the semiconductor device 170 in FIG. 19, and the semiconductor chip 101 ′ is connected to the terminal region p on the multi-pin printed circuit board 111 by the bonding wire 102. The space | interval shown by the code | symbol is the space between terminals for avoiding the poor contact with an adjacent terminal.

  The semiconductor device 8 includes a semiconductor chip 1 and bonding wires 2 and is packaged by sealing the semiconductor chip 1 with a sealing resin (resin) 5.

  First, in order to further reduce the outer size of the semiconductor device 8 as compared with the CSP structure in which the semiconductor device of FIG. 15 that has the smallest outer size in the conventional semiconductor device is superior, the semiconductor device 8 has the following structure. Have. In other words, in the semiconductor device 8, the wire cross section (bonding wire cross section) 7 of the bonding wire 2 connected to the terminal of the semiconductor chip 1 by bonding is exposed to the side surface of the semiconductor device 8. The bonding wire 2 may include gold or aluminum.

  By using the bonding wire 2 having such a configuration as an external output terminal, it is possible to output a signal from the semiconductor chip 1 to the outside without using an output material for outputting a signal to the outside. Since no output material is required, it is possible to reduce the size and thickness of a conventional semiconductor device that requires an output material.

  Further, since the output material is unnecessary, the cost of the semiconductor device 8 can be reduced, and the development of the output material becomes unnecessary. Therefore, the development period of the semiconductor device 8 and the development period of the semiconductor module on which the semiconductor device 8 is mounted can be shortened.

  In the outer shape of the semiconductor device 8 having the above configuration, the length of the longest portion is La as shown in FIG. This length La can be made shorter than Lb which is the length of the longest portion in the external shape of the conventional semiconductor device 160 of FIG.

  Further, as with the semiconductor device 170 in FIG. 1F, the semiconductor device according to the present embodiment is not limited by the design constraints of the output material (for example, a printed circuit board), no matter how many terminals of the semiconductor device are increased. The semiconductor device 8 ′ shown in FIG. 1E, which is a semiconductor device in which the number of terminals of the semiconductor device 8 is increased, is not limited by the output material design constraints.

  The length Lc of the longest portion in the outer shape of the semiconductor device 8 ′ can be shorter than Ld which is the length of the longest portion in the outer shape of the conventional semiconductor device 170 of FIG.

  As described above, the semiconductor devices 8 and 8 ′ can be formed into a semiconductor device having a constant size with respect to the size of the semiconductor chips 1 and 1 ′.

  Next, in order to further reduce the thickness of the semiconductor module 30 according to this embodiment shown in FIG. 2A, which will be described later, as compared with the conventional semiconductor module, the semiconductor device 8 does not use any material for fixing the semiconductor chip. The semiconductor device is not used. The material for fixing the semiconductor chip here is, for example, the following material. That is, the lead frame 127 for mounting the semiconductor device having the TSOP structure of FIG. 14 and the printed circuit board 107 for mounting the semiconductor device having the CSP structure of FIG. Or a material such as a leadless carrier 129 on which a semiconductor device having the leadless carrier structure of FIG. 16 is mounted.

  The semiconductor device 8 can be made thinner than the conventional semiconductor device by not using any material for fixing the semiconductor chip 1. In addition, the module total thickness Ta in the semiconductor module 30 including the semiconductor device 8 can be made thinner than the module total thickness Tc, Td, Te, Tf in the conventional semiconductor module. Thinning is possible (FIGS. 7 to 10).

  The total module thickness Ta in the semiconductor module 30 including the semiconductor device 8 is the thickness of the semiconductor chip 1, the thickness of the sealing resin (resin) 5 that seals the semiconductor chip 1, and the semiconductor chip as described later. 1 is the sum of the thickness of the module substrate 14 on which 1 is mounted.

  FIG. 2A is a cross-sectional view of the semiconductor module 30 according to the present embodiment, that is, the semiconductor module 30 in which the semiconductor device 8 according to the present embodiment is mounted on the module substrate (module substrate) 14. In the semiconductor module 30, the conductive rubber connector 12 is used as means for connecting the wire cross section 7 (terminal) located on the side surface to the semiconductor device 8 and the terminal of the module substrate 14. As the flexible conductive rubber connector 12, as shown in the perspective view of FIG. 2B, a structure in which insulating layers 19 and conductive layers 20 are alternately stacked is used. The conductive layer 20 and the bonding wire 2 are electrically connected. As a result, it is possible to connect the wire cross section 7 located on the side surface of the semiconductor device 8 and the terminal of the module substrate 14 in a state in which the insulation state between two adjacent terminals is maintained.

  In the semiconductor module 30, the conductive rubber connector 12 is connected and fixed by press-contacting the semiconductor device 8. Therefore, even when a defect (failure) of the semiconductor device 8 occurs, it is possible to easily repair (repair) only the semiconductor device 8.

  In addition, the semiconductor module 30 in FIG. 2A is characterized in that the semiconductor device 8 itself to be mounted is thinner than the conventional semiconductor device, and the conductive rubber connector 12 is disposed on the module substrate 14 so that the conductive rubber is provided. Only the connector 12 is fixed by a fixing jig (conductive rubber connector fixing means) 13 and is connected to the wire cross section 7 located on the side surface of the semiconductor device 8. Therefore, the module total thickness Ta in the semiconductor module 30 can be made thinner than the module total thickness Tg in the semiconductor module 140 using the conductive rubber connector 131 in FIG. 17 (FIG. 11).

  FIG. 3A is a cross-sectional view of the semiconductor module 40 according to the present embodiment. In the semiconductor module 40, mounting is performed by embedding a part of the semiconductor device 8 thinner than the conventional semiconductor device in the punched module substrate 15 that has been punched out in advance to the outer size of the semiconductor device 8. Thus, the total module thickness Tb in the semiconductor module 40 is the module total thickness Th in the semiconductor module 150, which is difficult to realize, that is, the conductive rubber connector 132 is used, and the semiconductor device is embedded in the hollow module substrate 133. FIG. The total thickness Th of the module in the semiconductor module 150 can be made thinner (FIG. 12).

  FIG. 3B is an enlarged view (cross-sectional enlarged view) of a portion indicated by a broken line C in the semiconductor module 40 shown in FIG. A module substrate wiring 17 is formed on the surface of the cut-out module substrate 15, and the module substrate wiring 17 and the module substrate electrode pad 16 formed on the surface of the module substrate wiring 17 are electrically connected. Yes. The module substrate electrode pad 16 and the conductive rubber connector 12 are electrically connected at the opening 51 of the protective member 44 that covers the module substrate wiring 17 and the module substrate electrode pad 16.

  A portion of the hollow module substrate 15 to which the conductive rubber connector 12 is not connected is covered with a protection member 44 (insulation protection member). As the protective member 44, a solder resist is generally used.

  The fixing jig 13 for fixing the conductive rubber connector 12 is fixed on the cut-out module substrate 15 by being bonded to the cut-out module substrate 15 using an adhesive 18 or the like applied on the cut-out module substrate 15. .

  FIG.3 (c) is the perspective view which looked at the part shown with the broken line C in the semiconductor module 40 shown to Fig.3 (a) from upper direction. In the perspective view of FIG. 3C, on the right side of the fixing jig 13, there is actually the module substrate electrode pad 16, but the module substrate wiring 17 is shown through this. Electrical connection between the semiconductor chip 1 and the bonding wire 2 is performed by a bonding pad 21 formed on the surface of the semiconductor chip 1.

  In the above description, the connection of the conductive rubber connector is described using the semiconductor module 40 of FIG. Here, the hollow module substrate 15 is used in the semiconductor module 40, but a conductive rubber connector is also connected to the semiconductor module using the module substrate 14 (for example, the semiconductor module 30 in FIG. 2) as in the semiconductor module 40. .

  As shown in FIG. 2B, the conductive rubber connector 12 is generally formed of a rectangular parallelepiped conductive layer 20 and a rectangular parallelepiped insulating layer 19 (that is, the laminated surface has the same shape as the conductive layer 20). It is a quadrangular prism shape formed.

  The fixing jig 13 and the module substrate 14 (or the fixing jig 13 and the hollow module substrate 15) form a space (space to be formed) 45 described later. The shape of the surface of the space 45 parallel to the surface to be laminated is a shape that matches the shape of the conductive rubber connector 12. That is, the shape of the surface to be stacked is a rectangle, and the shape of a surface parallel to the surface to be stacked in the space 45 is also a rectangle. Therefore, the conductive rubber connector 12 can be stably fixed on the module substrate 14. Therefore, the reliability of the semiconductor module can be improved.

  However, as shown in FIG. 4B, a triangular prism-shaped conductive layer 25 is formed by stacking a triangular prism conductive layer 25 and a triangular prism insulating layer 24 (that is, the shape of the laminated surface is equal to the conductive layer 25). The rubber connector 22 may be used instead of the conductive rubber connector 12. By using the conductive rubber connector 22 having a triangular prism shape, the thickness of the fixing jig 23 can be sufficiently secured as in the fixing jig (conductive rubber connector fixing means) 23 shown in FIG. The conductive rubber connector 22 can be fixed on the module substrate 14 more firmly and stably. Therefore, the reliability of the semiconductor module can be further improved.

  The fixing jig 23 and the cut-out module substrate 15 form a space 45 ′. The shape of the surface of the space 45 ′ parallel to the surface to be laminated is a shape that matches the shape of the conductive rubber connector 22. That is, the shape of the surface to be stacked is a triangle, and the shape of the surface of the space 45 ′ parallel to the surface to be stacked is also a triangle.

  Here, the width (width length) W of the cross-sections 20 ′ and 25 ′ of the conductive layers 20 and 25 of the conductive rubber connectors 12 and 22 is the distance D1 between the two adjacent bonding wires 2 ( If it is longer (thick) than that shown in FIG. 3D, the conductive layers 20 and 25 come into contact with the wire cross section 7 located next to the wire cross section 7 to be originally connected. For this reason, as the conductive layers 20 and 25, the conductive layers 20 and 25 having a width W shorter (thinner) than the distance D1 may be used. As a result, as long as the distance D1 is at least a distance W or more, the wire cross section 7 of the semiconductor device 8 and the terminals on the module substrate 14 (or the terminals on the hollow module substrate 15) are insulated from adjacent terminals. It is possible to connect in a state where the state is secured.

  Cross sections 20 ′ and 25 ′ show the surface of the conductive layer of the conductive rubber connector that contacts the bonding wire.

  Furthermore, the width W ′ of the cross sections 19 ′ and 24 ′ of the insulating layers 19 and 24 of the conductive rubber connectors 12 and 22 is the width (distance in the Y direction) D ′ of the wire cross section 7 (shown in FIG. 3D). If the cross section 19 ′, 24 ′ of the insulating layers 19, 24 and the wire cross section 7 overlap with each other, the electrical connection between the semiconductor device 8 and the conductive rubber connectors 12, 22 is lost. For this reason, the insulating layers 19 and 24 having a width W ′ shorter (narrower) than the width D ′ of the wire cross section 7 may be used. Thereby, as the bonding wire 2 to be used, a wire having a diameter larger than the width D ′ of the wire cross section 7 was used, so that the cross sections 19 ′ and 24 ′ of the insulating layers 19 and 24 overlapped with the wire cross section 7. Even in this case, the continuity (electrical connection) between the semiconductor device 8 and the conductive rubber connectors 12 and 22 can be maintained.

  Cross section 19 'shows the face next to cross section 20'. Similarly, the cross section 24 'shows the surface adjacent to the cross section 25'.

  When the removal portion 6 is cut and the cut surface 50 is formed in the semiconductor device manufacturing process described later, as shown in FIG. 1B, the wire angle 9 is vertical (that is, the wire angle 9 is 90 °, and the bonding wire 2 The wire cross section 7 is circular, and the area of the wire cross section 7 is the minimum size.

  Here, the wire angle 9 includes the bonding wire 2 extending along the XZ plane (the other plane perpendicular to the one plane) from the cutting plane 50 parallel to the YZ plane (one plane), and the cutting. This is an angle in the XZ plane (the other plane) formed by the surface 50.

  On the other hand, if the wire angle 9 is smaller than 90 degrees and larger than 0 degrees, the wire cross section 7 becomes elliptical, and the area of the wire cross section 7 can be increased.

  Thus, the smaller the wire angle 9 is, that is, the closer the bonding wire 2 is to the horizontal with respect to the cut surface 50, the larger the area of the wire cross section 7, and the reliability of electrical connection. Is advantageous to.

  When the bonding wire 2 is cut so that the wire angle 9 shown in FIG. 1B is 90 degrees, the cross section becomes a circle. When the diagonally rising portion of the bonding wire 2 is cut and the wire angle 9 is not 90 degrees, the shape of the wire cross section 7 of the bonding wire 2 is an ellipse. In this case, the above-described distance D ′ is the major axis (length of major axis) of the ellipse.

[Method of Manufacturing Semiconductor Device 8]
FIG. 5 is an explanatory diagram of the method for manufacturing the semiconductor device 8 according to the present embodiment, and FIGS. 5A to 5G are cross-sectional views illustrating the method for manufacturing the semiconductor device 8 according to the present embodiment. is there.

  First, as shown in FIG. 5A, a chip fixing material (semiconductor chip fixing material) 3 for temporarily fixing the semiconductor chip 1 is prepared, and the bonding wire 2 is temporarily fixed on the chip fixing material 3. The wire fixing frame 4 to be mounted is mounted. As the wire fixing frame 4, it is efficient to use a lattice-like object as shown in FIG. 5 (h) and mount the semiconductor chip 1 on the chip fixing material 3 so as to fit in the lattice. The wire fixing frame 4 may contain gold or aluminum.

  For example, a Kapton tape is used as the chip fixing material 3. In a wire bonding step (step of connecting with a bonding wire, FIG. 5C) and a resin sealing step (step of sealing with a sealing resin, FIG. 5D), which will be described later, heat treatment is generally performed. Done. Therefore, the chip fixing material 3 is preferably a heat-resistant tape in consideration of heat resistance and easy removal at the final stage of production. Therefore, for example, Kapton tape is preferably used.

  Next, as shown in FIG. 5B, the semiconductor chip 1 is mounted on the chip fixing material 3. The semiconductor chip 1 is mounted so as to fit within the wire fixing frame 4, for example.

  Next, as shown in FIG. 5C, the semiconductor chip 1 and the wire fixing frame 4 are connected by the bonding wire 2. In the prior art, the wire bonding to the output material side includes a terminal region p for reliable bonding and an inter-terminal space s for avoiding poor contact with adjacent terminals as shown in FIG. This is a design constraint. Due to this restriction, the larger the number of signal lines of the semiconductor chip, the wider the area occupied by the bonding wires as shown in FIG.

  However, in the present invention, the wire fixing frame 4 is finally removed. For this reason, even when the wire bonding to the wire fixing frame 4 is in contact with an adjacent wire or wire ball, a broken line (line) L in FIG. It doesn't have to touch at the boundary. Therefore, wire bonding in a narrower range than before is possible without being limited by the design constraints of the output material in the prior art.

  Next, as shown in FIG. 5D, sealing is performed with a sealing resin 5. FIG. 5D is a cross-sectional view taken along line A-A ′ of FIG. 5H, and a perspective view from above in a sealed state is as shown in FIG.

  Next, as shown in FIG. 5E, the portion indicated by the broken line L is cut using a method such as dicing, so that the portion 8a to be the semiconductor device 8 and the removal portion 6 are separated. A cut surface 50 is formed by the cutting. The state where the removing unit 6 is removed is as shown in FIG.

  As shown in FIG. 1B, the cutting position is a portion where the wire angle 9 is 90 ° or less and the bonding wire 2 is obliquely raised. As a result, the area of the wire cross section 7 exposed on the side surface of the semiconductor device 8 after cutting and used as a terminal can be secured larger than the area of the “cross section of the bonding wire 2”. The “cross section of the bonding wire 2” as used herein means that the bonding wire 2 is cut so that the wire angle 9 is 90 degrees (that is, the bonding wire 2 that has been straightened is cut perpendicularly to the drawing direction). This is a cross section of the bonding wire 2. If “the cross section of the bonding wire 2” is a circle, the shape of the wire cross section 7 is an ellipse. Since the area of the wire cross section 7 can be made larger than the area of the “cross section of the bonding wire 2”, more reliable electrical connection is possible.

  The wire angle 9 shown in FIG. 1B may be larger than 0 degree and smaller than 90 degrees, and a smaller angle is preferable. This is because a smaller angle can secure a larger area of the wire cross section 7.

  Next, since the chip fixing material 3 was used for temporarily fixing the semiconductor chip 1, the chip fixing material 3 attached to the bottom surface of the semiconductor chip 1 in the portion 8 a that becomes the semiconductor device 8 is removed. Thereby, the semiconductor device 8 according to the present embodiment is completed.

[Method for Manufacturing Semiconductor Module 30]
FIG. 6 is an explanatory diagram of the method for manufacturing the semiconductor module 30 according to the present embodiment, and FIGS. 6A to 6F are cross-sectional views illustrating the method for manufacturing the semiconductor module 30 according to the present embodiment. is there.

  First, as shown in FIG. 6A, a module substrate 14 is prepared. Next, as shown in FIG. 6B, an adhesive 18 is applied onto the module substrate 14, and the fixing jig 13 is adhered to the module substrate 14 with the adhesive 18, thereby fixing the fixing jig onto the module substrate 14. 13 is fixed. The cross-sectional shape of the fixing jig 13 is, for example, an L shape, and a space 45 is formed between the module substrate 14 and the fixing jig 13.

  Next, as shown in FIG. 6C, the conductive rubber connector 12 is fitted into a space 45 formed between the module substrate 14 and the fixing jig 13. FIG. 6D is a cross-sectional view (enlarged cross-sectional view) of a portion indicated by a broken line D in FIG. As shown in FIG. 6D, a part of the fitted conductive rubber connector 12 is not contained in the space 45 and is exposed (that is, an exposed portion (conductive rubber connector exposed portion) 46 is formed). is doing).

  Next, the semiconductor device 8 is pushed into the space (mounting space) 47 in which the semiconductor device 8 is mounted (FIG. 6C) (in the Z direction). As a result, the exposed portion 46 is pushed in the X direction (into the space 45), and the semiconductor device 8 is mounted with the exposed portion 46 being crushed (FIG. 6E). Thereby, the mounted semiconductor device 8 can be fixed by pressure contact with the exposed portion 46 pushed in the X direction (FIG. 6F). FIG.6 (f) is sectional drawing (enlarged sectional drawing) of the part shown with the broken line E in FIG.6 (e).

  Through the steps shown above, the semiconductor device 8 is mounted on the module substrate 14, and the semiconductor module 30 according to the present embodiment is completed.

  In the above description, the method for manufacturing the semiconductor module 30 of FIG. 2A has been described. However, the semiconductor module 40 of FIG. That is, the fixing jig 13 is adhered to the hollow module substrate 15 with the adhesive 18, the conductive rubber connector 12 is fitted, and the semiconductor device 8 is pushed. Thereby, the semiconductor device 8 after being mounted on the hollow module substrate 15 can also be fixed by pressure contact.

  In this embodiment, the semiconductor module 30 in FIG. 2A excluding the semiconductor device 8 and the semiconductor module 40 in FIG. 3A excluding the semiconductor device 8 are the operations of the semiconductor device 8. It can also be used as an inspection device (operation inspection means).

  The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  Since the semiconductor device of the present invention does not require an output material for outputting a signal to the outside, the semiconductor device can be suitably used for a high-density mounting electronic device for the purpose of downsizing and thinning.

1,1 'semiconductor chip 2 bonding wire 3 chip fixing material (semiconductor chip fixing material)
4 Wire fixing frame 5 Sealing resin (resin)
6 Removal part 7 Wire cross section (cross section of bonding wire)
8, 8 'Semiconductor device 8a Part 9 Wire angle 12, 22 Conductive rubber connector 13, 23 Fixing jig (conductive rubber connector fixing means)
Reference Signs List 14 module board 15 hollow module board 16 module board electrode pad 17 module board wiring 18 adhesive 19, 24 insulating layer 20, 25 conductive layer 21 bonding pad 30, 40 semiconductor module 44 protective member 45 space (space formed)
46 Exposed part (Exposed part of conductive rubber connector)
47 space (space to be installed)
50 Cut surface 51 Opening B, C, D, E Broken line D1 Interval L Broken line W Width W 'Width p, pL Terminal area s Space between terminals

Claims (15)

A semiconductor device comprising a semiconductor chip and a bonding wire, wherein the semiconductor chip is packaged by sealing with a resin,
A semiconductor device, wherein a cross section of the bonding wire is exposed on a side surface of the semiconductor device.   2. The semiconductor device according to claim 1, wherein a portion of the bonding wire rising obliquely is cut, and the cross-sectional shape is an ellipse.   The semiconductor device according to claim 1, wherein the bonding wire includes gold or aluminum. The semiconductor device according to any one of claims 1 to 3,
A module board;
A conductive rubber connector for connecting the bonding wire and the module substrate;
A conductive rubber connector fixing means fixed on the module substrate,
The semiconductor module, wherein the semiconductor device is pressed by the conductive rubber connector fixed by the conductive rubber connector fixing means. The conductive rubber connector is a conductive rubber connector in which insulating layers and conductive layers are alternately laminated,
The semiconductor module according to claim 4, wherein the conductive layer and the bonding wire are electrically connected.   6. The semiconductor module according to claim 5, wherein a width of a surface of the conductive layer in contact with the bonding wire is shorter than an interval between two adjacent bonding wires.   6. The semiconductor module according to claim 5, wherein a width of the insulating layer is shorter than a width of the cross section. The conductive layer and the insulating layer are cuboids having the same shape of the surface to be laminated,
The shape of the space formed by the conductive rubber connector fixing means and the module substrate and parallel to the surface to be laminated is a shape that matches the shape of the conductive rubber connector,
8. The semiconductor module according to claim 5, wherein a shape of the surface to be stacked is a rectangle, and a shape of a surface parallel to the surface to be stacked in the space is also a rectangle. The conductive layer and the insulating layer are triangular prisms having the same shape of the surface to be laminated,
The shape of the space formed by the conductive rubber connector fixing means and the module substrate in a plane parallel to the surface to be laminated is a shape that matches the shape of the conductive rubber connector,
8. The semiconductor module according to claim 5, wherein a shape of the surface to be stacked is a triangle, and a shape of a surface parallel to the surface to be stacked in the space is also a triangle.   The semiconductor module according to claim 5, wherein the module substrate is a module substrate hollowed out in advance to an outer size of the semiconductor device. It is a manufacturing method of the semiconductor device according to any one of claims 1 to 3,
Mounting a wire fixing frame for temporarily fixing the bonding wire on a semiconductor chip fixing material for temporarily fixing the semiconductor chip;
Mounting the semiconductor chip on the semiconductor chip fixing material;
Connecting the semiconductor chip and the wire fixing frame with the bonding wires;
A step of sealing with a sealing resin;
Separating the portion to be the semiconductor device and the removal portion;
Removing the chip fixing material attached to the bottom surface of the semiconductor chip at a portion to become the semiconductor device. The wire fixing frame has a lattice shape,
12. The method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor chip is housed in the lattice and mounted on the semiconductor chip fixing material.   The method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor chip fixing material is a Kapton tape.   The method of manufacturing a semiconductor device according to claim 11, wherein the wire fixing frame includes gold or aluminum. It is a manufacturing method of the semiconductor module of any one of Claims 4-10,
Fixing the conductive rubber connector fixing means on the module substrate;
Fitting the conductive rubber connector into a space formed between the module substrate and the conductive rubber connector fixing means to form a conductive rubber connector exposed portion;
And a step of pushing the semiconductor device into a space in which the semiconductor device is mounted.

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