JP2011119557A - Light emitting device, and method of manufacturing the same - Google Patents

Light emitting device, and method of manufacturing the same Download PDF

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JP2011119557A
JP2011119557A JP2009277201A JP2009277201A JP2011119557A JP 2011119557 A JP2011119557 A JP 2011119557A JP 2009277201 A JP2009277201 A JP 2009277201A JP 2009277201 A JP2009277201 A JP 2009277201A JP 2011119557 A JP2011119557 A JP 2011119557A
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light emitting
emitting element
semiconductor light
reflector
emitting device
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Shinji Watanabe
信二 渡辺
Akihisa Sakaemori
昭久 栄森
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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Abstract

<P>PROBLEM TO BE SOLVED: To suppress a resin material 4 for reflection and a resin material 5 for a lens from peeling from a metal lead frame 2. <P>SOLUTION: A recessed part 10 is formed on a top surface side of the metal lead frame 2 on which a semiconductor light emitting element 3 is mounted. A reflector 14 is formed so that an end part of it is positioned in a forming region of the recessed part 10. Then, the semiconductor light emitting element 3 is mounted, and the resin material for a lens is filled in a region surrounded by the reflector 14 by using transfer molding technique to cover the semiconductor light emitting element 3. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は発光装置及びその製造方法に関する。詳しくは、発光素子を囲繞する反射体が設けられ、反射体で囲繞した領域を光透過性材料で充填した発光装置及びこうした発光装置の製造方法に係るものである。   The present invention relates to a light emitting device and a method for manufacturing the same. Specifically, the present invention relates to a light-emitting device in which a reflector surrounding a light-emitting element is provided and a region surrounded by the reflector is filled with a light-transmitting material, and a method for manufacturing such a light-emitting device.

図６は従来の半導体発光装置（例えば、特許文献１参照。）を説明するための模式図である。ここで示す半導体発光装置は、主表面１０１ａを有するリードフレーム１０１と、主表面１０１ａ上に設けられたＬＥＤチップ１０４を備える。また、リードフレーム１０１とＬＥＤチップ１０４を接続する金線１０５と、ＬＥＤチップ１０４及び金線１０５を完全に覆う様に主表面１０１ａ上に設けられたエポキシ樹脂１０６と、エポキシ樹脂１０６を取り囲む様に設けられた樹脂部１０３を備える。   FIG. 6 is a schematic diagram for explaining a conventional semiconductor light emitting device (see, for example, Patent Document 1). The semiconductor light emitting device shown here includes a lead frame 101 having a main surface 101a and an LED chip 104 provided on the main surface 101a. Further, a gold wire 105 connecting the lead frame 101 and the LED chip 104, an epoxy resin 106 provided on the main surface 101a so as to completely cover the LED chip 104 and the gold wire 105, and an epoxy resin 106 are surrounded. The provided resin part 103 is provided.

ここで、リードフレーム１０１の周囲には、インサート成型などによって樹脂部１０３が設けられており、この樹脂部１０３は、主表面１０１ａ上で凹形状を形成している。また、主表面１０１ａ上には、凹形状の内部に位置する様に銀（Ａｇ）ペースト１０７を介在させてＬＥＤチップ１０４が搭載されている。   Here, a resin portion 103 is provided around the lead frame 101 by insert molding or the like, and the resin portion 103 forms a concave shape on the main surface 101a. On the main surface 101a, an LED chip 104 is mounted with a silver (Ag) paste 107 interposed so as to be positioned inside the concave shape.

更に、ＬＥＤチップ１０４の頂面側に形成された電極とリードフレーム１０１の主表面１０１ａとが金線１０５によって接続されている。また、主表面１０１ａ上には、ＬＥＤチップ１０４及び金線１０５を覆い、凹形状の内部を完全に充填する様にエポキシ樹脂１０６が設けられている。   Further, the electrode formed on the top surface side of the LED chip 104 and the main surface 101 a of the lead frame 101 are connected by a gold wire 105. An epoxy resin 106 is provided on the main surface 101a so as to cover the LED chip 104 and the gold wire 105 and completely fill the concave shape.

ここで、上記した半導体発光装置を製造する場合には、先ず、板状のリードフレーム１０１を所定のパターンに加工し、リードフレーム１０１に銀（Ａｇ）メッキを施し、その状態でリードフレーム１０１を樹脂部１０３内にインサート成型する。次に、主表面１０１ａ上に銀ペースト１０７を介在させてＬＥＤチップ１０４を搭載し、ＬＥＤチップ１０４と主表面１０１ａとを金線１０５によって電気的に接続する。その後、ＬＥＤチップ１０４及び金線１０５をエポキシ樹脂１０６によって封止し、周縁に突出して所定の方向に伸びるリード端子を切断し、リードフレーム１０１の不要部分から切り離すことで、上記した半導体発光装置を得ることができる。   Here, when manufacturing the semiconductor light emitting device described above, first, the plate-like lead frame 101 is processed into a predetermined pattern, and the lead frame 101 is plated with silver (Ag). Insert molding is performed in the resin portion 103. Next, the LED chip 104 is mounted on the main surface 101 a with the silver paste 107 interposed, and the LED chip 104 and the main surface 101 a are electrically connected by the gold wire 105. Thereafter, the LED chip 104 and the gold wire 105 are sealed with an epoxy resin 106, the lead terminal protruding in the peripheral edge and extending in a predetermined direction is cut, and separated from unnecessary portions of the lead frame 101, whereby the semiconductor light emitting device described above is obtained. Obtainable.

特開２００４−２７４０２７号公報JP 2004-274027 A

しかしながら、上記した従来の半導体発光装置では、エポキシ樹脂１０６、樹脂部１０３及びリードフレーム１０１の界面を起点として剥離が生じる恐れがある。
即ち、エポキシ樹脂１０６、樹脂部１０３及びリードフレーム１０１はそれぞれ熱膨張係数が異なるため、温度変化に起因して３者が接する領域（図中符号Ａで示す領域）に応力が集中することとなる。そして、こうした応力の集中が一因となって、リードフレーム１０１とエポキシ樹脂１０６との間や、リードフレーム１０１と樹脂部１０３との間に剥離が生じ、光学特性が低下してしまう恐れがある。 However, in the above-described conventional semiconductor light emitting device, there is a possibility that peeling occurs from the interface of the epoxy resin 106, the resin portion 103, and the lead frame 101 as a starting point.
That is, since the epoxy resin 106, the resin portion 103, and the lead frame 101 have different coefficients of thermal expansion, stress is concentrated in a region where the three members come into contact (region indicated by symbol A in the figure) due to a temperature change. . Then, due to the concentration of such stress, separation between the lead frame 101 and the epoxy resin 106 or between the lead frame 101 and the resin portion 103 may occur and optical characteristics may be deteriorated. .

本発明は、この様な点に鑑みて創案されたものであって、基板への密着性を向上させ、光学特性の低下を抑止することができる発光装置及びこうした発光装置の製造方法を提供することを目的とするものである。   The present invention has been made in view of such points, and provides a light-emitting device that can improve adhesion to a substrate and suppress a decrease in optical characteristics, and a method for manufacturing such a light-emitting device. It is for the purpose.

上記の目的を達成するために、本発明の発光装置では、発光素子搭載領域と、該発光素子搭載領域の周囲に設けられた凹部を有する基板と、該基板の前記発光素子搭載領域に搭載された発光素子と、前記凹部に充填されると共に、前記発光素子を囲繞する反射体を構成する反射材料と、前記反射体により囲繞された領域に充填されると共に、前記基板の表面と同一平面上における前記反射材料との界面が前記凹部の形成領域に配された光透過性材料とを備える。   In order to achieve the above object, in the light emitting device of the present invention, a light emitting element mounting region, a substrate having a recess provided around the light emitting element mounting region, and the light emitting element mounting region of the substrate are mounted. The light emitting element, the reflective material constituting the reflector surrounding the light emitting element, and the region surrounded by the reflector are filled and coplanar with the surface of the substrate. And an optically transparent material disposed in an area where the concave portion is formed.

ここで、基板の表面と同一平面上における光透過性材料と反射材料との界面が、反射材料が充填された凹部の形成領域に配されたことによって、基板と反射材料と光透過性材料が同一界面で接することを回避することができる。   Here, the interface between the light transmissive material and the reflective material on the same plane as the surface of the substrate is arranged in the formation region of the recess filled with the reflective material, so that the substrate, the reflective material, and the light transmissive material are It is possible to avoid contact at the same interface.

また、上記の目的を達成するために、本発明の発光装置の製造方法では、発光素子搭載領域と、該発光素子搭載領域の周囲に設けられた凹部を有する基板の前記凹部を反射材料で充填すると共に、同反射材料で前記基板の表面と同一平面上における前記発光素子搭載領域側の端部が前記凹部の形成領域に位置し、前記発光素子搭載領域を囲繞する反射体を形成する工程と、前記基板の発光素子搭載領域に発光素子を搭載する工程と、光透過性材料を前記反射体により囲繞された領域に充填する工程とを備える。   In order to achieve the above object, in the method for manufacturing a light emitting device according to the present invention, the concave portion of the substrate having the light emitting element mounting region and the concave portion provided around the light emitting element mounting region is filled with a reflective material. And a step of forming a reflector that surrounds the light emitting element mounting region with an end portion on the light emitting element mounting region side on the same plane as the surface of the substrate made of the same reflective material. And a step of mounting the light emitting element on the light emitting element mounting region of the substrate, and a step of filling the region surrounded by the reflector with the light transmissive material.

ここで、反射材料で凹部を充填すると共に、同反射材料で基板の表面と同一平面上における発光素子搭載領域側の端部が凹部の形成領域に位置し、発光素子搭載領域を囲繞する反射体を形成することによって、基板と反射材料と光透過性材料が同一界面で接することを回避することができる。   Here, the reflector is filled with the reflective material, and the end of the light emitting element mounting region side on the same plane as the surface of the substrate is located in the concave forming region and surrounds the light emitting device mounting region. By forming the substrate, it is possible to avoid that the substrate, the reflective material, and the light transmissive material are in contact at the same interface.

本発明の発光装置及びその製造方法では、基板と反射材料及び光透過性材料の密着性を高めることができ、光学特性の低下を抑止することが可能となる。   In the light emitting device and the manufacturing method thereof according to the present invention, the adhesion between the substrate, the reflective material, and the light transmissive material can be improved, and the deterioration of the optical characteristics can be suppressed.

本発明を適用した発光装置の一例である半導体発光装置を説明するための模式図である。It is a schematic diagram for demonstrating the semiconductor light-emitting device which is an example of the light-emitting device to which this invention is applied. 金属製リードフレーム２を説明するための模式的な平面図である。4 is a schematic plan view for explaining a metal lead frame 2. FIG. 本発明を適用した発光装置の製造方法の一例である半導体発光装置の製造方法を説明するための模式図（１）である。It is a schematic diagram (1) for demonstrating the manufacturing method of the semiconductor light-emitting device which is an example of the manufacturing method of the light-emitting device to which this invention is applied. 本発明を適用した発光装置の製造方法の一例である半導体発光装置の製造方法を説明するための模式図（２）である。It is a schematic diagram (2) for demonstrating the manufacturing method of the semiconductor light-emitting device which is an example of the manufacturing method of the light-emitting device to which this invention is applied. 本発明を適用した半導体発光装置の製造方法の工程を示すフローチャートである。It is a flowchart which shows the process of the manufacturing method of the semiconductor light-emitting device to which this invention is applied. 多連状の金属製リードフレーム基材を説明するための模式図である。It is a schematic diagram for demonstrating a multiple metal lead frame base material. 従来の半導体発光装置を説明するための模式図である。It is a schematic diagram for demonstrating the conventional semiconductor light-emitting device.

以下、発明を実施するための形態（以下、「実施の形態」と称する。）について説明する。なお、説明は以下の順序で行う。
１．第１の実施の形態（半導体発光装置）
２．第２の実施の形態（半導体発光装置の製造方法）
３．変形例 Hereinafter, modes for carrying out the invention (hereinafter referred to as “embodiments”) will be described. The description will be given in the following order.
1. First Embodiment (Semiconductor Light Emitting Device)
2. Second Embodiment (Semiconductor Light Emitting Device Manufacturing Method)
3. Modified example

＜１．第１の実施の形態＞
図１は本発明を適用した発光装置の一例である半導体発光装置を説明するための模式図であり、ここで示す半導体発光装置１は、金属製リードフレーム２と、半導体発光素子３と、反射用樹脂材料４と、レンズ用樹脂材料５とを備えている。 <1. First Embodiment>
FIG. 1 is a schematic diagram for explaining a semiconductor light-emitting device that is an example of a light-emitting device to which the present invention is applied. The semiconductor light-emitting device 1 shown here includes a metal lead frame 2, a semiconductor light-emitting element 3, and a reflective device. The resin material 4 for lenses and the resin material 5 for lenses are provided.

なお、ここで示す半導体発光装置１は発光装置の一例であり、金属製リードフレーム２は基板の一例であり、半導体発光素子３は発光素子の一例であり、反射用樹脂材料４は反射材料の一例であり、レンズ用樹脂材料５は光透過性材料の一例である。   The semiconductor light emitting device 1 shown here is an example of a light emitting device, the metal lead frame 2 is an example of a substrate, the semiconductor light emitting element 3 is an example of a light emitting element, and the reflective resin material 4 is a reflective material. This is an example, and the lens resin material 5 is an example of a light-transmitting material.

図２は金属製リードフレーム２を説明するための模式的な平面図であり、ここで示す金属製リードフレーム２は、厚さが概ね０．２ｍｍ程度であり、スリット６によって半導体発光素子搭載部７と金属線接続部８とに分割されている。なお、半導体発光素子３の搭載面とは反対側の面（図１の下面）はスリット６に両側に有底の溝部６Ａが形成されている。   FIG. 2 is a schematic plan view for explaining the metal lead frame 2. The metal lead frame 2 shown here has a thickness of about 0.2 mm, and the semiconductor light emitting element mounting portion is formed by the slit 6. 7 and a metal wire connecting portion 8. Note that a surface (on the lower surface in FIG. 1) opposite to the mounting surface of the semiconductor light emitting element 3 has slits 6 with bottomed grooves 6A formed on both sides.

更に詳しくは、半導体発光素子搭載部７及び金属線接続部８は板形状を有しており、所定のパターニング加工が施されることによって離間している。そして、離間している半導体発光素子搭載部７と金属線接続部８との間に、半導体発光素子３の搭載面から半導体発光素子３の搭載面の反対側の面にまで達するスリット６が設けられている。なお、半導体発光素子搭載部７と金属線接続部８とは、反射用樹脂材料４によって絶縁されている。つまり、スリット６に反射用樹脂材料４が充填されることによって、半導体発光素子搭載部７と金属線接続部８は絶縁されている。   More specifically, the semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 have a plate shape and are separated by a predetermined patterning process. A slit 6 extending from the mounting surface of the semiconductor light emitting element 3 to the surface opposite to the mounting surface of the semiconductor light emitting element 3 is provided between the semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 that are separated from each other. It has been. The semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 are insulated by the reflective resin material 4. That is, the semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 are insulated by filling the slit 6 with the resin material 4 for reflection.

ここで、半導体発光素子搭載部７と金属線接続部８とはスリット６によって電気的に非接続状態が保たれているために、必ずしもスリット６の両側に有底の溝部６Ａが形成される必要は無い。但し、後述する様に、半導体発光素子３の搭載面とは反対側の面には端子半田めっきが設けられており、こうした端子半田めっき同士が意図せず電気的に接続してしまわない様に、半導体発光素子３の搭載面とは反対側の面に溝部６Ａが設けられた方が好ましい。   Here, since the semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 are electrically disconnected from each other by the slit 6, a bottomed groove portion 6 </ b> A is necessarily formed on both sides of the slit 6. There is no. However, as will be described later, terminal solder plating is provided on the surface opposite to the mounting surface of the semiconductor light emitting element 3 so that these terminal solder platings are not intended to be electrically connected. The groove 6A is preferably provided on the surface opposite to the mounting surface of the semiconductor light emitting element 3.

なお、半導体発光素子３の搭載面とは反対側の面に溝部６Ａが設けられることによって、半導体発光素子搭載部７と金属線接続部８との間隙が拡がることとなり、意図しない端子半田めっき同士の電気的接続を抑制することが期待できる。   In addition, by providing the groove 6A on the surface opposite to the mounting surface of the semiconductor light emitting element 3, the gap between the semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 is widened, and unintended terminal solder plating is performed. It can be expected to suppress electrical connection.

また、金属製リードフレーム２には、半導体発光素子３を搭載する半導体発光素子搭載領域９が設けられ、半導体発光素子搭載領域９の周辺には、半導体発光素子搭載領域９を取り囲む様に凹部１０が設けられている。具体的には、半導体発光素子搭載領域９を中心として、直径が１．６５ｍｍ程度の略円状を描く様に、深さ約０．０８ｍｍ、幅約０．２２５ｍｍの凹部１０が設けられている。   The metal lead frame 2 is provided with a semiconductor light emitting element mounting area 9 for mounting the semiconductor light emitting element 3, and a recess 10 is formed around the semiconductor light emitting element mounting area 9 so as to surround the semiconductor light emitting element mounting area 9. Is provided. Specifically, a recess 10 having a depth of about 0.08 mm and a width of about 0.225 mm is provided so as to draw a substantially circular shape having a diameter of about 1.65 mm with the semiconductor light emitting element mounting region 9 as the center. .

ここで、本実施の形態では、スリット６の近傍に凹部１０が形成されていない。具体的には、図２中符号Ｂで示す領域には凹部１０が形成されていない。これは、こうした領域は溝部６Ａが設けられている領域であるために、凹部１０が設けられた場合には溝部６Ａと凹部１０とによって金属製リードフレーム２を貫通してしまう可能性があり、金属製リードフレーム２の強度が低下する恐れがあるためである。   Here, in the present embodiment, the recess 10 is not formed in the vicinity of the slit 6. Specifically, the recess 10 is not formed in the region indicated by the symbol B in FIG. This is because such a region is a region in which the groove 6A is provided, and when the recess 10 is provided, the groove 6A and the recess 10 may penetrate the metal lead frame 2, This is because the strength of the metal lead frame 2 may be reduced.

なお、金属製リードフレーム２に貫通孔が形成されたとしても充分な強度を確保することができる場合には、スリット６の近傍（溝部６Ａの形成領域）に凹部１０を形成しても良い。また、溝部６Ａが形成されていない場合には、スリット６の近傍に凹部１０を形成しても良い。   If sufficient strength can be ensured even if a through hole is formed in the metal lead frame 2, the recess 10 may be formed in the vicinity of the slit 6 (formation region of the groove 6A). Further, when the groove 6A is not formed, the recess 10 may be formed in the vicinity of the slit 6.

更に、金属製リードフレーム２の半導体発光素子３の搭載面のうち、半導体発光素子３と金属製ワイヤで電気的に接続される領域には、銀めっき１１が形成されている。また、金属製リードフレーム２の半導体発光素子３の搭載面とは反対側の面には、半導体発光装置１を実装基板（図示せず）等に接続するための端子半田めっき１７が設けられている。   Further, a silver plating 11 is formed in a region of the mounting surface of the semiconductor lead frame 2 on which the semiconductor light emitting element 3 is electrically connected to the semiconductor light emitting element 3 with a metal wire. A terminal solder plating 17 for connecting the semiconductor light emitting device 1 to a mounting substrate (not shown) or the like is provided on the surface of the metal lead frame 2 opposite to the mounting surface of the semiconductor light emitting element 3. Yes.

また、金属製リードフレーム２の半導体発光素子３の搭載面の凹部１０よりも半導体発光素子３とは反対側に第２の凹部１８が設けられている。ここで、第２の凹部１８に反射用樹脂材料４が充填されることで、金属製リードフレーム２と反射体１４との接着強度がアンカー効果によって強化されることとなる。
なお、第２の凹部１８を形成しなくても、金属製リードフレーム２と反射体１４との接着強度を充分に確保することができる場合には、必ずしも第２の凹部１８が形成される必要は無い。 A second recess 18 is provided on the opposite side of the recess 10 on the mounting surface of the semiconductor light emitting element 3 of the metal lead frame 2 from the semiconductor light emitting element 3. Here, by filling the second recess 18 with the resin material 4 for reflection, the adhesive strength between the metal lead frame 2 and the reflector 14 is enhanced by the anchor effect.
Note that the second recess 18 is not necessarily formed if the adhesive strength between the metal lead frame 2 and the reflector 14 can be sufficiently secured without forming the second recess 18. There is no.

半導体発光素子３とは、例えば、ＬＥＤチップ等であり、金属製リードフレーム２の半導体発光素子搭載領域９に所定の導電性接着材料１２を介して搭載されている。具体的には、半導体発光素子３は、例えば銀ペースト等の導電性ペーストを接着材料として、金属製リードフレーム２の半導体発光素子搭載領域９に固定保持されることとなる。   The semiconductor light emitting element 3 is, for example, an LED chip or the like, and is mounted on the semiconductor light emitting element mounting region 9 of the metal lead frame 2 via a predetermined conductive adhesive material 12. Specifically, the semiconductor light emitting element 3 is fixed and held in the semiconductor light emitting element mounting region 9 of the metal lead frame 2 using, for example, a conductive paste such as silver paste as an adhesive material.

また、半導体発光素子３の外部接続パッド（図示せず）と金属製リードフレーム２とは金属製ワイヤ１３で電気的に接続されている。   The external connection pads (not shown) of the semiconductor light emitting element 3 and the metal lead frame 2 are electrically connected by a metal wire 13.

具体的には、半導体発光素子３の頂面（金属製リードフレーム２と対向する側の面と反対側の面であって、図１に示す上側の面）に設けられた外部接続パッド（図示せず）と、金属線接続部８とを例えば金細線によって電気的に接続されている。   Specifically, an external connection pad (see FIG. 1) provided on the top surface of the semiconductor light emitting element 3 (the surface opposite to the surface facing the metal lead frame 2 and the upper surface shown in FIG. 1). (Not shown) and the metal wire connecting portion 8 are electrically connected by, for example, a gold thin wire.

この様に、半導体発光素子３は、導電性接着材料（例えば銀ペースト）１２及び金属製ワイヤ（例えば金細線）１３によって、金属製リードフレーム２の半導体発光素子３の搭載面と電気的に接続されている。   In this manner, the semiconductor light emitting element 3 is electrically connected to the mounting surface of the semiconductor light emitting element 3 of the metal lead frame 2 by the conductive adhesive material (for example, silver paste) 12 and the metal wire (for example, gold fine wire) 13. Has been.

反射用樹脂材料４は、絶縁性材料であり、スリット６、溝部６Ａ、凹部１０及び第２の凹部１８に充填されている。また、反射用樹脂材料４は、半導体発光素子３を囲繞する反射体１４を構成し、半導体発光素子３から発せられた光は反射体によって指向性が制御されることとなる。   The reflective resin material 4 is an insulating material and fills the slit 6, the groove 6 </ b> A, the recess 10, and the second recess 18. The reflective resin material 4 constitutes a reflector 14 surrounding the semiconductor light emitting element 3, and the directivity of the light emitted from the semiconductor light emitting element 3 is controlled by the reflector.

具体的には、反射体１４によって形作られる凹形状部１５の底部に半導体発光素子３及びその周辺領域が位置する様に構成されている。そして、この様に構成することによって、半導体発光素子３から発せられた光を凹形状の側壁で反射し、光の指向性を制御している。なお、反射体１４は半導体発光素子３よりもその厚みが大きくなる様に構成されている。   Specifically, the semiconductor light emitting device 3 and its peripheral region are positioned at the bottom of the concave portion 15 formed by the reflector 14. And by configuring in this way, the light emitted from the semiconductor light emitting element 3 is reflected by the concave side wall to control the directivity of the light. The reflector 14 is configured to be thicker than the semiconductor light emitting element 3.

なお、反射用樹脂材料４は、半導体発光素子３から発生する光を高効率で反射できる様に、反射率が高い白色の材料であることが好ましい。また、半導体発光素子３から発せられる光で劣化し難い材料であることが好ましい。   The reflective resin material 4 is preferably a white material having a high reflectance so that light generated from the semiconductor light emitting element 3 can be reflected with high efficiency. Moreover, it is preferable that the material is not easily deteriorated by light emitted from the semiconductor light emitting element 3.

また、反射体１４は、金属製リードフレーム２の半導体発光素子３の搭載面と同一平面上における半導体発光素子３側の端部（図１中符号Ｃで示す領域）が凹部１０の形成領域に位置すべく構成されている。具体的には、図１中の拡大図で示す様に、反射体１４は凹部１０の幅方向の略中心位置を起点としが概ね４５°の角度をなす傾斜部を有して構成されている。   Further, the reflector 14 has an end portion (region indicated by C in FIG. 1) on the same plane as the mounting surface of the semiconductor light emitting device 3 of the metal lead frame 2 in the region where the recess 10 is formed. It is configured to be positioned. Specifically, as shown in the enlarged view in FIG. 1, the reflector 14 is configured to have an inclined portion having an angle of approximately 45 ° starting from a substantially central position in the width direction of the recess 10. .

なお、反射体１４と半導体発光素子３との間隔や、反射体１４の傾斜部の角度については、半導体発光装置１の特性に応じて適宜変更となるものである。   The interval between the reflector 14 and the semiconductor light emitting element 3 and the angle of the inclined portion of the reflector 14 are appropriately changed according to the characteristics of the semiconductor light emitting device 1.

ここで、本実施の形態における反射体１４は、半導体発光素子３よりも厚みが大きい場合を例に挙げて説明を行っているが、反射体１４は必ずしも半導体発光素子３よりも厚みが大きく構成される必要は無い。但し、反射体１４は半導体発光素子３から発せられる光の指向性を制御するものであり、より充分に光の指向性を制御するためには、反射体１４は半導体発光素子３よりも大きな厚みである方が好ましい。   Here, the reflector 14 in the present embodiment has been described by taking as an example a case where the thickness of the reflector 14 is larger than that of the semiconductor light emitting element 3, but the reflector 14 is not necessarily configured to be thicker than the semiconductor light emitting element 3. There is no need to be done. However, the reflector 14 controls the directivity of light emitted from the semiconductor light emitting element 3, and the reflector 14 has a larger thickness than the semiconductor light emitting element 3 in order to more fully control the directivity of light. Is preferable.

レンズ用樹脂材料５は、光透過性を有する絶縁性材料であり、半導体発光素子３を完全に覆う様に反射体１４が形成する凹形状部１５に充填されると共に、反射体１４を被覆する様に構成されている。なお、レンズ用樹脂材料５は高い光透過性を実現できる様に、透明の材料であることが好ましい。   The lens resin material 5 is an insulating material having optical transparency, and is filled in the concave portion 15 formed by the reflector 14 so as to completely cover the semiconductor light emitting element 3 and covers the reflector 14. It is configured like this. The lens resin material 5 is preferably a transparent material so that high light transmittance can be realized.

また、本実施の形態では、レンズ用樹脂材料５が反射体１４の表面を被覆して構成された場合を例に挙げて説明を行っているが、必ずしもレンズ用樹脂材料５が反射体１４の表面を被覆する必要は無い。   Further, in the present embodiment, the case where the lens resin material 5 is configured to cover the surface of the reflector 14 is described as an example. However, the lens resin material 5 is not necessarily the reflector 14. There is no need to coat the surface.

ここで、レンズ用樹脂材料５としては、例えば熱硬化性樹脂（エポキシ樹脂、シリコン樹脂等）を用いることができる。そして、この熱硬化性樹脂の形状によって半導体発光素子３が発する光に目的とする光学特性を持たせることができることとなる。本実施の形態では、レンズ用樹脂材料５には半球状のレンズ部分１６が設けられている。   Here, as the lens resin material 5, for example, a thermosetting resin (epoxy resin, silicon resin, or the like) can be used. The shape of the thermosetting resin can give the desired optical characteristics to the light emitted from the semiconductor light emitting element 3. In the present embodiment, the lens resin material 5 is provided with a hemispherical lens portion 16.

また、レンズ用樹脂材料５は、外部からの物理的または電気的な接触に対して、半導体発光素子３や金属製ワイヤ１３を保護するといった役割をも果たしている。   The lens resin material 5 also serves to protect the semiconductor light emitting element 3 and the metal wire 13 against physical or electrical contact from the outside.

本発明を適用した半導体発光装置１では、上述の様に、金属製リードフレーム２の半導体発光素子３の搭載面と同一平面上における半導体発光素子３側の反射体１４の端部が凹部１０の形成領域に位置すべく形成されている。そのため、金属製リードフレーム２と反射用樹脂材料４とレンズ用樹脂材料５が同一界面で接することを回避することができ、温度変化に起因した応力の集中による反射用樹脂材料４やレンズ用樹脂材料５の剥離を抑制することができるのである。   In the semiconductor light emitting device 1 to which the present invention is applied, the end portion of the reflector 14 on the semiconductor light emitting element 3 side on the same plane as the mounting surface of the semiconductor light emitting element 3 of the metal lead frame 2 is the recess 10 as described above. It is formed so as to be positioned in the formation region. Therefore, it can be avoided that the metal lead frame 2, the reflective resin material 4 and the lens resin material 5 are in contact with each other at the same interface, and the reflective resin material 4 and the lens resin due to the concentration of stress caused by the temperature change. The peeling of the material 5 can be suppressed.

また、凹部１０に反射用樹脂材料４が充填されているために、金属製リードフレーム２と反射体１４との接着強度がアンカー効果によって強化されることとなり、この点においても反射用樹脂材料４の剥離を抑制することができる。   Further, since the concave resin 10 is filled with the reflective resin material 4, the adhesive strength between the metal lead frame 2 and the reflector 14 is enhanced by the anchor effect. Also in this respect, the reflective resin material 4 Peeling can be suppressed.

なお、半導体発光装置１に凹部１０が設けられた場合（本発明を適用した半導体発光装置）と、凹部１０が設けられていない場合（従来の半導体発光装置）の双方について、応力シミュレーション解析を行った。なお、応力シミュレーションは、モールド成形時を想定して１５０℃の状態から２５℃の状態へと温度変化が生じた場合の反射体１４の半導体発光素子３側の端部に加わる応力値を解析した。   It should be noted that stress simulation analysis is performed both when the semiconductor light emitting device 1 is provided with the recess 10 (semiconductor light emitting device to which the present invention is applied) and when the recess 10 is not provided (conventional semiconductor light emitting device). It was. In the stress simulation, the stress value applied to the end portion of the reflector 14 on the semiconductor light emitting element 3 side when the temperature changes from a state of 150 ° C. to a state of 25 ° C. assuming molding is analyzed. .

その結果、半導体発光装置１に凹部１０が設けられていない場合には、反射体１４の半導体発光素子３側の端部に１．９５４Ｋｇｆ／ｍｍ２の応力が加わっていることが確認できた。一方、凹部１０が設けられた場合には、反射体１４の半導体発光素子３側の端部に１．６１７Ｋｇｆ／ｍｍ２の応力しか加わっていないことが確認できた。
即ち、凹部１０が設けられたことによって、反射体１４の半導体発光素子３側の端部に加わる応力を緩和することができることを確認することができた。 As a result, when the semiconductor light emitting device 1 was not provided with the concave portion 10, it was confirmed that a stress of 1.954 kgf / mm 2 was applied to the end portion of the reflector 14 on the semiconductor light emitting element 3 side. On the other hand, when the concave portion 10 was provided, it was confirmed that only the stress of 1.617 Kgf / mm 2 was applied to the end portion of the reflector 14 on the semiconductor light emitting element 3 side.
In other words, it was confirmed that the stress applied to the end portion of the reflector 14 on the semiconductor light emitting element 3 side can be relaxed by providing the concave portion 10.

＜２．第２の実施の形態＞
以下、上記の様に構成された半導体発光装置１の製造方法について説明を行う。即ち、本発明を適用した発光装置の製造方法の一例である半導体発光装置の製造方法について説明を行う。 <2. Second Embodiment>
Hereinafter, a method for manufacturing the semiconductor light emitting device 1 configured as described above will be described. That is, a method for manufacturing a semiconductor light emitting device, which is an example of a method for manufacturing a light emitting device to which the present invention is applied, will be described.

図３Ａ及び図３Ｂは本発明を適用した半導体発光装置の製造方法を説明するための模式図であり、図４は本発明を適用した半導体発光装置の製造方法の工程を示すフローチャートである。   3A and 3B are schematic views for explaining a method for manufacturing a semiconductor light emitting device to which the present invention is applied, and FIG. 4 is a flowchart showing steps of a method for manufacturing a semiconductor light emitting device to which the present invention is applied.

本発明を適用した半導体発光装置の製造方法では、先ず、図３Ａ（ａ）で示す様に、金属の板材を所定形状にパターニングして金属製リードフレーム基材２０を形成する。   In the method of manufacturing a semiconductor light emitting device to which the present invention is applied, first, as shown in FIG. 3A (a), a metal lead frame base material 20 is formed by patterning a metal plate material into a predetermined shape.

具体的には、例えば、打ち抜きプレス加工やエッチング加工等の適当な加工方法を用いて、金属の板材を所定形状にパターニングすることによって図５で示す様な、多連状の金属製リードフレーム基材２０を形成する。   More specifically, for example, by using an appropriate processing method such as punching press processing or etching processing, a metal plate material is patterned into a predetermined shape, as shown in FIG. The material 20 is formed.

ここで、図５で示す金属製リードフレーム基材２０は、半導体発光装置１を構成する金属製リードフレーム２が複数個連なったものである。金属製リードフレーム基材２０は、リードフレーム２のみならず、両端に配置されたサポートフレーム２１と、サポートフレーム２１同士の間に架橋する様に渡され骨組み状となっている複数の桟フレーム２２とを含んでいる。   Here, the metal lead frame substrate 20 shown in FIG. 5 is formed by connecting a plurality of metal lead frames 2 constituting the semiconductor light emitting device 1. The metal lead frame base material 20 includes not only the lead frame 2 but also a support frame 21 disposed at both ends and a plurality of cross frame frames 22 that are bridged between the support frames 21 so as to be bridged. Including.

ここで、個々の金属製リードフレーム２は、上述した様に、スリット６によって半導体発光素子搭載部７と金属線接続部８とに分割され、有底の溝部６Ａ、凹部１０や第２の凹部１８が設けられている。なお、半導体発光素子搭載部７と金属線接続部８とは、金属製リードフレーム基材２０では分離されており、隣接する桟フレーム２２によって吊られる様に保持されている。   Here, as described above, each metal lead frame 2 is divided into the semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 by the slit 6, and the bottomed groove portion 6A, the concave portion 10 and the second concave portion. 18 is provided. The semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 are separated by the metal lead frame base material 20 and are held so as to be suspended by the adjacent cross frame 22.

ところで、半導体発光素子搭載部７と金属線接続部８とを分離するスリット６の間隔が小さければ、半導体発光装置１の小型化に寄与することとなる。
ここで、一般に金属製リードフレーム基材２０を形成する金属の板材の厚みが大きければ大きいほど、スリット６の幅も広くなってしまう。そのため、金属製リードフレーム基材２０を形成する金属の板材の厚みは小さい方が好ましく、本実施の形態では概ね０．２ｍｍの板材を用いている。 By the way, if the interval between the slits 6 separating the semiconductor light emitting element mounting portion 7 and the metal wire connecting portion 8 is small, it contributes to miniaturization of the semiconductor light emitting device 1.
Here, in general, the greater the thickness of the metal plate forming the metal lead frame substrate 20, the wider the slit 6 becomes. Therefore, it is preferable that the thickness of the metal plate material forming the metal lead frame base material 20 is small, and a plate material of approximately 0.2 mm is used in the present embodiment.

次に、金属製リードフレーム基材２０の半導体発光素子３の搭載面のうち、半導体発光素子３と金属製ワイヤで電気的に接続される領域に銀めっき１１を形成する。   Next, the silver plating 11 is formed in the area | region electrically connected with the semiconductor light-emitting device 3 and metal wires among the mounting surfaces of the semiconductor light-emitting device 3 of the metal lead frame base material 20.

続いて、トランスファーモールド技術を用いて、スリット６、溝部６Ａ、凹部１０及び第２の凹部１８に反射用樹脂材料４を充填する。
また、同時に、反射用樹脂材料４によって、半導体発光素子搭載領域９を囲繞する反射体１４を形成する。更に、桟フレーム２２の下方（半導体発光素子３の搭載面とは反対側方向）にも反射用樹脂材料４を充填する（図３Ａ（ｂ）参照。）。 Subsequently, the reflective resin material 4 is filled into the slit 6, the groove 6 </ b> A, the recess 10, and the second recess 18 using a transfer mold technique.
At the same time, the reflector 14 surrounding the semiconductor light emitting element mounting region 9 is formed by the reflective resin material 4. Further, the reflective resin material 4 is also filled below the crosspiece frame 22 (in the direction opposite to the mounting surface of the semiconductor light emitting element 3) (see FIG. 3A (b)).

ここで、反射体１４は、金属製リードフレーム２の半導体発光素子３の搭載面と同一平面上における半導体発光素子搭載領域９側の端部が凹部１０の形成領域に位置する様に形成する。なお、製造誤差を考慮すると、反射体１４の端部が凹部１０の略中心に位置する様な設計とすることが好ましい。   Here, the reflector 14 is formed such that the end portion on the semiconductor light emitting element mounting region 9 side on the same plane as the mounting surface of the semiconductor light emitting element 3 of the metal lead frame 2 is located in the formation region of the recess 10. In consideration of manufacturing errors, it is preferable to design the reflector 14 so that the end of the reflector 14 is positioned substantially at the center of the recess 10.

また、反射体１４によって形作られる凹形状部１５の底部に半導体発光素子搭載領域９及びその周辺領域が位置する様に構成されている。このとき、半導体発光素子３から発生する光を高効率で反射できる様に、反射用樹脂材料４としては白色の材料を用いることが好ましい。   Further, the semiconductor light emitting element mounting region 9 and its peripheral region are located at the bottom of the concave portion 15 formed by the reflector 14. At this time, it is preferable to use a white material as the reflective resin material 4 so that the light generated from the semiconductor light emitting element 3 can be reflected with high efficiency.

ここで、本実施の形態ではトランスファーモールド技術を用いる場合を例に挙げて説明を行っている。しかし、スリット６、溝部６Ａ、凹部１０及び第２の凹部１８に反射用樹脂材料４を充填することができ、反射体１４を形成することができれば充分であり、必ずしもトランスファーモールド技術を用いる必要は無い。   Here, in this embodiment, the case where the transfer mold technique is used is described as an example. However, it is sufficient if the slit 6, the groove 6 </ b> A, the concave portion 10, and the second concave portion 18 can be filled with the reflective resin material 4 and the reflector 14 can be formed, and it is not always necessary to use the transfer molding technique. No.

続いて、熱硬化性の銀ペースト等の導電性接着材料１２を、個々の金属製リードフレーム２の半導体素子搭載部７の半導体発光素子搭載領域９に塗布する。そして、導電性接着材料１２を介在させて半導体発光素子３を半導体発光素子搭載領域９に搭載する（図３Ａ（ｃ）参照。）。この様にして、半導体発光素子３を金属製リードフレーム２に搭載するダイボンド処理が行われることとなる。   Subsequently, a conductive adhesive material 12 such as a thermosetting silver paste is applied to the semiconductor light emitting element mounting region 9 of the semiconductor element mounting portion 7 of each metal lead frame 2. Then, the semiconductor light emitting element 3 is mounted on the semiconductor light emitting element mounting region 9 with the conductive adhesive material 12 interposed (see FIG. 3A (c)). In this way, the die bonding process for mounting the semiconductor light emitting element 3 on the metal lead frame 2 is performed.

次に、半導体発光素子搭載領域９に搭載された半導体発光素子３の外部接続パッド（図示せず）と金属製リードフレーム２とを、例えば直径２０〜３０μｍ程度の金細線等の金属製ワイヤ１３によって電気的に接続を行うワイヤーボンドを行う（図３Ａ（ｄ）参照。）。これにより、半導体発光装置１としての電気的回路が形成されることとなる。   Next, an external connection pad (not shown) of the semiconductor light emitting element 3 mounted in the semiconductor light emitting element mounting region 9 and the metal lead frame 2 are connected to a metal wire 13 such as a gold wire having a diameter of about 20 to 30 μm, for example. (See FIG. 3A (d)). Thereby, an electrical circuit as the semiconductor light emitting device 1 is formed.

次に、半導体発光素子３と金属製ワイヤ１３を完全に覆う様に、トランスファーモールド技術を用いて、レンズ用樹脂材料５を凹形状部１５に充填する。また、同時に、レンズ用樹脂材料５で半球状のレンズ部分１６を形成する（図３Ｂ（ｅ）参照。）。なお、高い光透過性を実現できる様に、レンズ用樹脂材料５としては透明の材料を用いることが好ましい。   Next, the resin material 5 for a lens is filled in the concave shaped portion 15 by using a transfer molding technique so as to completely cover the semiconductor light emitting element 3 and the metal wire 13. At the same time, a hemispherical lens portion 16 is formed from the lens resin material 5 (see FIG. 3B (e)). In addition, it is preferable to use a transparent material as the lens resin material 5 so that high light transmittance can be realized.

ここで、本実施の形態ではトランスファーモールド技術を用いる場合を例に挙げて説明を行っている。しかし、凹形状部１５にレンズ用樹脂材料５を充填することができ、レンズ部分１６を形成することができれば充分であり、必ずしもトランスファーモールド技術を用いる必要は無い。   Here, in this embodiment, the case where the transfer mold technique is used is described as an example. However, it is sufficient if the concave resin portion 15 can be filled with the lens resin material 5 and the lens portion 16 can be formed, and it is not always necessary to use the transfer molding technique.

但し、例えば、ポッティング技術を用いて凹形状部１５にレンズ用樹脂材料５を充填する場合には、レンズ用樹脂材料５の粘度の影響を受けて充填量のバラツキを受けやすく、また、レンズ部分１６の形状制御が非常に困難である。更に、熱硬化時の揮発成分の蒸発や硬化収縮等の影響によっても均一な封止形状を実現することが難しい。そのため、こうした点に鑑みると、トランスファーモールド技術を用いた方が好ましい。   However, for example, when filling the concave portion 15 with the lens resin material 5 using a potting technique, the filling amount is easily affected by the viscosity of the lens resin material 5, and the lens portion 16 shape control is very difficult. Furthermore, it is difficult to achieve a uniform sealing shape due to the effects of evaporation of volatile components and curing shrinkage during thermal curing. Therefore, in view of these points, it is preferable to use the transfer mold technique.

次に、金属製リードフレーム基材２０の半導体発光素子３の搭載面とは反対側の面にめっき処理を行い、端子半田めっき１７を形成する（図３Ｂ（ｆ）参照。）。   Next, the surface of the metal lead frame base 20 opposite to the mounting surface of the semiconductor light emitting element 3 is plated to form terminal solder plating 17 (see FIG. 3B (f)).

こうした工程を経ることによって、複数の半導体発光装置１が格子状に配列された状態となる。   Through these steps, a plurality of semiconductor light emitting devices 1 are arranged in a lattice pattern.

その後、ダイシングブレード２３によって、格子状に配列された半導体発光装置１の外形に沿って、多連状の金属製リードフレーム基材２０を切断する（図３Ｂ（ｇ）参照。）。これにより、複数の半導体発光装置１が多連状の金属製リードフレーム２０より切り出され、単個の半導体発光装置１を得ることができる。   Thereafter, the multiple metal lead frame base materials 20 are cut by the dicing blade 23 along the outer shape of the semiconductor light emitting device 1 arranged in a lattice shape (see FIG. 3B (g)). As a result, a plurality of semiconductor light emitting devices 1 are cut out from the multiple metal lead frames 20, and a single semiconductor light emitting device 1 can be obtained.

本発明を適用した半導体発光装置の製造方法では、上述の様に、金属製リードフレーム２の半導体発光素子３の搭載面と同一平面上における半導体発光素子搭載領域９側の反射体１４の端部が凹部１０の形成領域に位置する様に、反射体１４を形成している。そのため、金属製リードフレーム２と反射用樹脂材料４とレンズ用樹脂材料５が同一界面で接することを回避することができ、温度変化に起因した応力の集中による反射用樹脂材料４やレンズ用樹脂材料５の剥離を抑制することができるのである。   In the method of manufacturing a semiconductor light emitting device to which the present invention is applied, as described above, the end of the reflector 14 on the semiconductor light emitting element mounting region 9 side on the same plane as the mounting surface of the semiconductor light emitting element 3 of the metal lead frame 2. Is formed in the region where the recess 10 is formed. Therefore, it can be avoided that the metal lead frame 2, the reflective resin material 4 and the lens resin material 5 are in contact with each other at the same interface, and the reflective resin material 4 and the lens resin due to the concentration of stress caused by the temperature change. The peeling of the material 5 can be suppressed.

また、凹部１０に反射用樹脂材料４を充填しているために、金属製リードフレーム２と反射体１４との接着強度がアンカー効果によって強化されることとなり、この点においても反射用樹脂材料４の剥離を抑制することができる。   In addition, since the reflective resin material 4 is filled in the recess 10, the adhesive strength between the metal lead frame 2 and the reflector 14 is reinforced by the anchor effect. Also in this respect, the reflective resin material 4 is used. Peeling can be suppressed.

更に、本発明を適用した半導体発光装置の製造方法では、トランスファーモールド技術を用いてレンズ用樹脂材料５を凹形状部１５に充填している。そのため、レンズ用樹脂材料５を、半導体発光素子３が発する光に関して目的とされる光学特性に基づいた形状に成形することを極めて容易に実現することができ、かつ、その形状安定性を確保することができる。更に、トランスファーモールド金型内でレンズ用樹脂材料５の硬化を行うために、硬化時の揮発成分の蒸発や硬化収縮による封止形状のバラツキをも抑えることができることとなる。   Furthermore, in the method for manufacturing a semiconductor light emitting device to which the present invention is applied, the concave resin portion 5 is filled with the lens resin material 5 using a transfer molding technique. Therefore, it is very easy to form the lens resin material 5 into a shape based on the optical characteristics intended for the light emitted from the semiconductor light emitting element 3, and to ensure the shape stability. be able to. Further, since the lens resin material 5 is cured in the transfer mold, variations in the sealing shape due to evaporation of volatile components and curing shrinkage during curing can be suppressed.

また、本発明を適用した半導体発光装置の製造方法では、桟フレーム２２の下方にも反射用樹脂材料４を充填し、そのことによって、ダイシングブレード２３によるダイシング時にバリが発生することを抑制することができる。
即ち、ダイシングブレード２３によって切断する桟フレーム２２の上方（半導体発光素子３の搭載面方向）及び下方（半導体発光素子３の搭載面とは反対側方向）の双方が反射用樹脂材料４で被覆されている。そのため、ダイシング時に桟フレーム２２が表面に露出することなく、上述の様に、バリの発生を抑制することができるのである。 In the method of manufacturing a semiconductor light emitting device to which the present invention is applied, the reflective resin material 4 is also filled below the crosspiece frame 22, thereby suppressing generation of burrs when dicing by the dicing blade 23. Can do.
In other words, both the upper side (in the direction of the mounting surface of the semiconductor light emitting element 3) and the lower side (direction opposite to the mounting surface of the semiconductor light emitting element 3) of the crosspiece frame 22 cut by the dicing blade 23 are covered with the reflective resin material 4. ing. Therefore, the burr generation can be suppressed as described above without exposing the crosspiece frame 22 to the surface during dicing.

＜３．変形例＞
本発明を適用した半導体発光装置１では、反射体１４の半導体発光素子３側の端部が凹部１０の形成領域に位置することによって、金属製リードフレーム２と反射用樹脂材料４とレンズ用樹脂材料５が同一界面で接することを回避することができる。 <3. Modification>
In the semiconductor light emitting device 1 to which the present invention is applied, the metal lead frame 2, the reflective resin material 4, and the lens resin are formed by positioning the end of the reflector 14 on the semiconductor light emitting element 3 side in the formation region of the recess 10. It can be avoided that the material 5 contacts at the same interface.

そして、上記した第１の実施の形態では、半導体発光素子搭載領域９を中心として略円状を描く様に凹部１０が設けられている場合を例に挙げて説明を行っている。即ち、図２中符号Ｂで示す領域を除いて凹部１０が設けられ、反射体１４の半導体発光素子３側の概ね全ての端部が凹部１０の形成領域に位置する場合を例に挙げて説明を行っている。しかしながら、必ずしも反射体１４の半導体発光素子３側の概ね全ての端部が凹部１０に位置する必要は無く、反射体１４の半導体発光素子３側の端部の一部のみが凹部１０の形成領域に位置する様に構成されても構わない。   In the first embodiment described above, the case where the concave portion 10 is provided so as to draw a substantially circular shape centering on the semiconductor light emitting element mounting region 9 is described as an example. That is, the case where the concave portion 10 is provided except for the region indicated by symbol B in FIG. 2 and almost all the end portions of the reflector 14 on the semiconductor light emitting element 3 side are located in the formation region of the concave portion 10 will be described as an example. It is carried out. However, it is not always necessary that all the ends of the reflector 14 on the semiconductor light emitting element 3 side are located in the recess 10, and only a part of the end of the reflector 14 on the semiconductor light emitting element 3 side is the formation region of the recess 10. You may comprise so that it may be located in.

即ち、例え一部であったとしても、凹部１０の形成領域において、金属製リードフレーム２と反射用樹脂材料４とレンズ用樹脂材料５が同一界面で接することを回避することによって、光学特性の低下を抑止することが期待できる。   That is, even if it is a part of the optical characteristics, the metal lead frame 2, the reflective resin material 4, and the lens resin material 5 are prevented from contacting at the same interface in the formation region of the recess 10. It can be expected to suppress the decline.

１半導体発光装置
２金属製リードフレーム
３半導体発光素子
４反射用樹脂材料
５レンズ用樹脂材料
６スリット
６Ａ溝部
７半導体発光素子搭載部
８金属線接続部
９半導体発光素子搭載領域
１０凹部
１１銀めっき
１２導電性接着材料
１３金属製ワイヤ
１４反射体
１５凹形状部
１６レンズ部分
１７端子半田めっき
１８第２の凹部
２０金属製リードフレーム基材
２１サポートフレーム
２２桟フレーム
２３ダイシングブレード DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device 2 Metal lead frame 3 Semiconductor light-emitting element 4 Reflective resin material 5 Lens resin material 6 Slit 6A groove part 7 Semiconductor light-emitting element mounting part 8 Metal wire connection part 9 Semiconductor light-emitting element mounting area 10 Recessed part 11 Silver plating 12 Conductive adhesive material 13 Metal wire 14 Reflector 15 Concave portion 16 Lens portion 17 Terminal solder plating 18 Second recess 20 Metal lead frame base material 21 Support frame 22 Cross frame 23 Dicing blade

Claims (6)

発光素子搭載領域と、該発光素子搭載領域の周囲に設けられた凹部を有する基板と、
該基板の前記発光素子搭載領域に搭載された発光素子と、
前記凹部に充填されると共に、前記発光素子を囲繞する反射体を構成する反射材料と、
前記反射体により囲繞された領域に充填されると共に、前記基板の表面と同一平面上における前記反射材料との界面が前記凹部の形成領域に配された光透過性材料とを備える
発光装置。 A light emitting element mounting region, and a substrate having a recess provided around the light emitting element mounting region;
A light emitting element mounted on the light emitting element mounting region of the substrate;
A reflective material that fills the concave portion and constitutes a reflector surrounding the light emitting element;
A light-emitting device comprising: a light-transmitting material that fills a region surrounded by the reflector, and has an interface with the reflective material on the same plane as the surface of the substrate. 前記反射体により囲繞された領域は、前記基板から遠ざかるにつれて内周径が拡径すべく構成された
請求項１に記載の発光装置。 The light-emitting device according to claim 1, wherein the region surrounded by the reflector is configured such that an inner peripheral diameter increases as the distance from the substrate increases. 前記光透過性材料は、前記発光素子から発せられた光の光路上にレンズ形状をなすレンズ部分が設けられた
請求項１または請求項２に記載の発光装置。 The light-emitting device according to claim 1, wherein the light-transmitting material is provided with a lens portion having a lens shape on an optical path of light emitted from the light-emitting element. 発光素子搭載領域と、該発光素子搭載領域の周囲に設けられた凹部を有する基板の前記凹部を反射材料で充填すると共に、同反射材料で前記基板の表面と同一平面上における前記発光素子搭載領域側の端部が前記凹部の形成領域に位置し、前記発光素子搭載領域を囲繞する反射体を形成する工程と、
前記基板の発光素子搭載領域に発光素子を搭載する工程と、
光透過性材料を前記反射体により囲繞された領域に充填する工程とを備える
発光装置の製造方法。 The light emitting element mounting region and the concave portion of the substrate having a concave portion provided around the light emitting element mounting region are filled with a reflective material, and the light emitting element mounting region is flush with the surface of the substrate with the reflective material. Forming a reflector whose side end is located in the formation region of the recess and surrounds the light emitting element mounting region;
Mounting a light emitting element on the light emitting element mounting region of the substrate;
And a step of filling a region surrounded by the reflector with a light transmissive material. 前記反射体は、トランスファーモールド技術によって形成する
請求項４に記載の発光装置の製造方法。 The method of manufacturing a light emitting device according to claim 4, wherein the reflector is formed by a transfer mold technique. 前記反射体により囲繞された領域をトランスファーモールド技術によって光透過性材料で充填する
請求項４または請求項５に記載の発光装置の製造方法。 The method for manufacturing a light emitting device according to claim 4, wherein a region surrounded by the reflector is filled with a light transmissive material by a transfer molding technique.
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