JP2010513722A - Non-contact treatment kit - Google Patents

Abstract

  A processing kit for use in a physical vapor deposition (PVD) chamber is provided with a PVD chamber having a non-contact processing kit. In one embodiment, the processing kit has a substantially flat cylindrical body, at least one elongated cylindrical ring extending downwardly from the body, and a mounting extending upwardly from the top surface of the body. A shield that is generally cylindrical. In other embodiments, the processing kit includes a deposition ring that is generally cylindrical. The deposition ring includes a substantially flat cylindrical body portion, at least one downwardly extending U-channel coupled to the outer portion of the body portion, and an inner wall extending upwardly from the upper surface of the inner region of the body portion. And a substrate support shelf extending radially inward from the inner wall portion.

Description

Background of the Invention

(Field of Invention)
Embodiments of the present invention generally relate to a processing kit for a semiconductor processing chamber and a semiconductor processing chamber having the processing kit. More specifically, the present invention relates to a processing kit that includes a ring and shield suitable for use in a physical vapor deposition chamber.

(Description of related technology)
Physical vapor deposition (PVD) or sputtering is one of the most commonly used processes in the manufacture of electronic devices. PVD is a plasma process performed in a vacuum chamber, where a negatively biased target is plasma of an inert gas having relatively heavy atoms (eg, argon (Ar)) or a gas containing such an inert gas. Expose to mixture. As the inert gas ions collide with the target, atoms of the target material are ejected. The ejected atoms are accumulated as a deposited film on the substrate on the substrate support pedestal disposed in the chamber.

  A processing kit can be placed in the chamber to help define the processing area for the substrate in a desired area in the chamber. The processing kit typically includes a cover ring, a deposition ring, and a ground shield. Limiting the plasma and the ejected atoms within this processing area can protect the other components in the chamber from the deposition material and cause the ejected atoms to be deposited on the substrate at a higher rate. Helps to promote more efficient use of target materials. In addition, the deposition ring prevents deposition of target material on the outer periphery of the substrate support pedestal. Cover rings are commonly used to prevent deposition under the substrate by creating a labyrinth gap between the deposition ring and the ground shield. Covering can also be used to help control the deposition at or under the substrate edge.

  Although conventional ring and shield constructions have been able to handle robustly, as critical dimensions shrink, there is increasing interest in contamination sources within the chamber. Since the ring and the shield periodically come into contact with each other when the substrate support pedestal moves up and down between the transfer position and the processing position, the conventional structure may become a source of contamination by fine particles.

  Furthermore, since conventional covering structures are not typically connected to a temperature control source (such as a chamber wall or substrate support pedestal), the temperature of the covering may vary during the processing cycle. When the cover ring is heated or cooled, the stress applied to the material deposited on the cover ring is increased, and the stressed material is peeled off to easily generate particles. Thus, the inventors of the present invention have come to believe that it would be advantageous to have a processing kit that helps to minimize chamber contamination.

  Accordingly, there is a need in the art for improved processing kits.

  The present invention generally provides a PVD chamber having a processing kit for use in a physical vapor deposition (PVD) chamber and an interleaved processing kit. In one embodiment, the processing kit includes a mating deposition ring and a ground shield. The deposition ring is configured to have a wide pedestal contact surface and a plurality of substrate support buttons. When installed in a PVD chamber, the contact between the meshed deposition ring, ground shield and substrate support pedestal, and chamber wall is maintained, resulting in very good and predictable temperature control, and the film deposited thereon Contamination during processing by is advantageously minimized. In addition, the mated deposition ring and ground shield are constructed so that they do not contact during use in the PVD chamber, which is advantageous without being a potential particle source found in conventional configurations.

  In one embodiment, the treatment kit of the present invention comprises a substantially flat cylindrical body, at least one elongated cylindrical ring extending downwardly from the body, and an attachment extending upwardly from the top surface of the body. And a shield that is generally cylindrical.

  In other embodiments, the processing kit includes a deposition ring that is generally cylindrical. The deposition ring includes a substantially flat cylindrical body portion, at least one downwardly extending U-channel coupled to the outer portion of the body portion, and upwardly extending from the upper surface of the inner region of the body portion. An inner wall portion and a substrate support shelf extending radially inward from the inner wall portion are included.

  In yet another embodiment, a PVD chamber is provided, the PVD chamber including an intermeshing ground shield and a deposition ring configured to prevent contact during use of the PVD chamber.

A more specific description of the invention, briefly summarized above, will be given with reference to the embodiments. Embodiments are illustrated in the accompanying drawings. However, the accompanying drawings only illustrate exemplary embodiments of the invention, and the invention may include other equally effective embodiments and should not be construed as limiting the scope of the invention. Should be noted.
1 is a simplified cross-sectional view of a semiconductor processing system having an embodiment of a processing kit. FIG. 2 is a partial cross-sectional view of a processing kit in contact with a substrate support base portion of FIG. 1. It is a fragmentary sectional view of other embodiments of a processing kit which touched a substrate support base part. It is a fragmentary sectional view of other embodiments of a processing kit which touched a substrate support base part. It is a fragmentary sectional view of other embodiments of a processing kit which touched a substrate support base part. It is a fragmentary sectional view of other embodiments of a processing kit which touched a substrate support base part.

  For the sake of smooth understanding, the same reference numerals are used for the same elements in the drawings as much as possible. Elements disclosed in one embodiment may be conveniently used in other embodiments without special mention.

Detailed description

  The present invention generally provides a processing kit for use in a physical vapor deposition (PVD) chamber. This processing kit is advantageous in that it is less likely to cause particulate contamination, resulting in longer process life and better process uniformity and reproducibility.

  FIG. 1 illustrates an exemplary semiconductor processing chamber 150 having one embodiment of a processing kit 114. The processing kit 114 includes a mating deposition ring 102 and a ground shield 162. An example of a processing chamber that may be configured to benefit the present invention is the IMP VECTRA ™ PVD processing chamber, available from Applied Materials, Inc., Santa Clara, California. It is contemplated that other processing chambers, including those from other manufacturers, may be configured to benefit the present invention.

  The exemplary processing chamber 150 includes a chamber body 152 having a bottom 154 that defines an evacuable interior volume 160, a lid assembly 156, and a sidewall 158. The chamber body 150 is typically made from a stainless steel weld plate or a single aluminum block. The sidewall portion 158 generally has a sealable access port (not shown) for allowing the substrate 104 to enter and exit the processing chamber 150. A pumping port 122 provided in the side wall 158 is connected to a pumping system 120 that exhausts the internal volume 160 and controls its pressure. The lid assembly 156 of the chamber 150 generally supports an annular shield 162 that engages the deposition ring 102 to confine plasma generated in the interior volume 160 in the region above the substrate 104.

  The pedestal assembly 100 is supported by the bottom 154 of the chamber 150. The pedestal assembly 100 supports the deposition ring 102 with the substrate 104 during processing. The pedestal assembly 100 is coupled to the bottom 154 of the chamber 150 by a lift mechanism 118, which is configured to move the pedestal assembly 100 between an upper position (shown) and a lower position. In the upper position, the deposition ring 102 is engaged with the shield 162 in a spaced relationship. In the lower position, the deposition ring 102 is detached from the shield 162, so that the substrate 104 can be taken out of the chamber 150 from between the ring 102 and the shield 162 through an access port provided in the side wall portion 158. In addition, in the lower position, lift (lift) pins (shown in FIG. 2) move within the pedestal assembly 100 to lift the substrate 104 from the pedestal assembly 100, so that a wafer transfer mechanism (external to the processing chamber 150 ( For example, the substrate 104 can be replaced smoothly using a single-wing robot or the like (not shown). A bellows 186 is typically disposed between the pedestal assembly 100 and the chamber bottom 154 to isolate the interior volume 160 of the chamber body 152 from the interior of the pedestal assembly 100 and the exterior of the chamber.

  The pedestal assembly 100 typically includes a substrate support 140 that is hermetically coupled to the platform housing 108. The platform housing 108 is typically made from a metallic material such as stainless steel or aluminum. The cooling plate 124 is typically disposed within the platform housing 108 and provides thermal control of the substrate support 140. An example of a pedestal assembly 100 that may be configured to benefit the present invention is described in US Pat. No. 5,507,499 issued April 16, 1996 to Davenport et al.

  The substrate support 140 may include aluminum or ceramic. The substrate support 140 may be an electrostatic chuck, a ceramic body, a heater, or a combination thereof. In one embodiment, the substrate support 140 is an electrostatic chuck that includes a dielectric 106 with a conductive layer 112 embedded therein. The dielectric 106 is typically made from a dielectric material with high thermal conductivity, such materials include pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina, or equivalent materials.

  The lid assembly 156 typically includes a lid 130, a target 132, a spacer 182 and a magnetron 134. As shown in FIG. 1, the lid portion 130 is supported by the side wall portion 158 when in the closed position. A seal 136 is disposed between the spacer 182, the lid portion 130, and the side wall portion 158 in order to prevent vacuum leakage from the space.

  The target 132 is connected to the lid 130 and exposed to the internal volume 160 of the processing chamber 150. A target 132 supplies material to be deposited on the substrate 104 during the PVD process. A spacer 182 is disposed between the target 132, the lid 130, and the chamber main body 152, and insulates the target 132 from the lid 130 and the chamber main body 152.

  Target 132 and pedestal assembly 100 are biased together by a power source 184. A gas such as argon is supplied to the internal volume 160 from a gas supply source (not shown). Plasma is formed from gas between the substrate 104 and the target 132. The ions in the plasma accelerate toward the target 132 and peel off the material from the target 132. The peeled target material is deposited on the substrate 104.

  The magnetron 134 is connected to the lid 130 outside the processing chamber 150. The magnetron 134 includes at least one rotating magnet assembly 138 that facilitates uniform consumption of the target 132 during the PVD process. An example of a magnetron that can be used is described in US Pat. No. 5,953,827, issued September 21, 1999 to Or et al.

  The hinge assembly 110 couples the lid assembly 156 to the processing chamber 150. The motor driven actuator 116 may be coupled to the hinge assembly 110 and / or the lid 130 to facilitate movement of the lid assembly 156 between the open and closed sites.

  FIG. 2 is a partial cross-sectional view of the processing kit 114 in contact with the substrate support base assembly 100. Although not shown, the shield 162 of the processing kit 114 is attached to the chamber body 152 at a constant height with respect to the lid assembly 156. The deposition ring 102 is shown in the raised or processing position, a labyrinth gap 250 is defined between the deposition ring 102 and the ground shield 162, and plasma and deposition species are defined between the substrate 104 and the target 132. Confined in the area. The deposition ring 102 and ground shield 162 also provide a barrier that prevents material ejected from the target 132 from accidentally depositing on other parts of the chamber. Thus, the deposition ring 102 and ground shield 162 facilitate efficient conversion from the target 132 to a material layer to be deposited on the substrate 104.

  The ground shield 162 has a body portion 202 that is flat and substantially cylindrical, and can be made from and / or coated with a conductive material such as metal. Metals suitable for use as ground shield 162 include stainless steel and titanium. The material for the ground shield 162 should be selected to be compatible with the processing performed in the chamber. The main body 202 is attached to the chamber main body 152 such that the center line of the main body 202 and the center line of the pedestal assembly 100 are substantially concentric. The center line 200 of the main body 202 shown in the embodiment of FIG. 2 is oriented substantially vertically. The position of the center line 200 is merely exemplary, as is the case with other features of the drawing, and is not to scale.

  The main body portion 202 includes an upper surface 204, a lower surface 206, an outer wall portion 220 and an inner edge portion 224. In the embodiment illustrated in FIG. 2, the top surface 204 and the bottom surface 206 are substantially perpendicular to the centerline 200. However, the inclined surface 226 of the upper surface 204 that is inclined downward toward the inner edge portion 224 of the main body portion 202 is excluded.

  Inner and outer rings 208, 210 extend downward from the lower surface 206. The rings 208, 210 are generally elongated cylinders (compared to the overall shape of the body 202). In the embodiment illustrated in FIG. 2, the rings 208, 210 are arranged in a spaced apart relationship that is generally parallel. Further, the outer diameter of the outer ring 210 may be the same as the outer diameter of the outer wall portion 220.

  The attachment portion 212 extends upward from the upper surface 204 along the outer wall portion 220. The attachment portion 212 includes an inner wall portion 214, an inner tapered portion 216, an outer wall portion 222, and an attachment flange 218. Inner wall 214 extends upwardly from upper surface 204 in a substantially vertical direction to inwardly tapered portion 216. The inward tapered portion 216 extends outward in the upward direction, and forms a space between the shield 162 and the target 130 (shown in FIG. 1). The outer wall part 222 usually has a diameter larger than the outer diameter of the outer wall part 220 of the main body part 202.

  A mounting flange 218 extends outwardly from the outer wall 222 and engages the body 152 and / or the lid assembly 156 to secure the shield 162 in place. The mounting flange 218 may include a plurality of holes and / or slots to facilitate connection with the body portion 152 and / or the lid assembly 156. Since the body portion 152 and / or the lid assembly 156 to which the shield 162 is attached are thermally regulated, the temperature of the mounting flange 218 can be controlled by conduction.

  A part of the ground shield 162 may be coated or textured, or may be processed in another form. In one embodiment, at least a portion of the surface of the ground shield 162 is roughened. Roughening (eg, texturing) can be achieved by etching, embossing, polishing, bead blasting, grit blasting, grinding or sanding, among other suitable processes. In the embodiment illustrated in FIG. 2, the surface of the ground shield 162 is all bead blasted. The bead blasted surface of the ground shield typically has an RA surface finish of about 250 microinches or greater.

  The deposition ring 102 has a body portion 252 that is flat and substantially cylindrical and can be formed from a conductive or non-conductive material. In one embodiment, the deposition ring 102 is made from a ceramic material such as quartz, aluminum oxide, or other suitable material.

  The body portion 252 typically includes an outer portion 274, an inner portion 276, a lower surface 256 and an upper surface 254. The top surface 254 includes a recess 258 that houses the lip 228 of the shield 162 when the shield 162 and the ring 102 are positioned in close proximity to each other. The lower surface 256 is configured to be placed on a shelf 240 formed on the outer periphery of the base assembly 100. The lower surface 256 may be flattened and / or a smooth surface finish may be applied to the lower surface 256 to facilitate good thermal contact with the shelf 240. The contact area between the lower surface 256 and the shelf 240 is relatively large (than conventional configurations), and the ring section of the main body 252 may be relatively thin, so that heat transfer between the ring 102 and the pedestal assembly 100 is extremely high. It becomes good. For this reason, the temperature of the ring 102 is easily kept constant through heat transfer with the pedestal assembly 100.

  In one embodiment, one or more temperature control elements 246 are positioned directly below the shelf 240 in the pedestal assembly 100 so that the ring 102 is independent of the pedestal assembly 100 features used to control the temperature of the substrate 104. The temperature control may be strengthened. Temperature control element 246 includes one or more conduits for flowing heat transfer fluid, resistance heating elements, and the like. The output of the temperature control element 246 is controlled by one or more suitable temperature control sources 248 (power supplies, heat transfer fluid sources, etc.).

  The inner wall portion 260 extends upward from the inner portion 276 to the substrate support flange 262. The inner wall 260 has an inner diameter such that a gap is maintained between the wall 260 and the step 242 connecting the shelf 240 to the upper surface 244 of the pedestal assembly 100. The inner wall 260 has a height such that a gap is maintained between the flange 262 of the ring 102 and the upper surface 244 of the pedestal assembly 100.

  The substrate support flange 262 extends inwardly from the upper end portion of the inner wall portion 260 and covers the outer edge portion of the upper surface 244 of the pedestal assembly 100. In one embodiment, the flange 262 is generally perpendicular to the inner wall 260 and parallel to the lower and upper surfaces 256, 254. The flange 262 includes a plurality of substrate support buttons 264 that support the substrate 104 spaced above the top surface of the flange 262. Button 264 may have a rounded shape, a cylindrical shape, a frustoconical shape, or other suitable shape. Button 264 minimizes contact between substrate 104 and ring 102. Since the contact between the button 264 and the substrate 104 is minimal, the possibility of particle generation is reduced while minimizing heat transfer between the ring 102 and the substrate 104. In one embodiment, three buttons 264 are arranged symmetrically in the polar array and the buttons have a height of about 1 mm.

  An upward U channel 266 is generally formed in the outer portion 274 of the body portion 274. The U channel 266 has an inner leg 268 that is connected to the outer leg 272 by a bottom 270. The inner leg portion 268 extends downward from the lower surface 256 of the main body portion 252 and has an inner diameter such that a gap is maintained between the pedestal assembly 100 and the ring 102.

  Legs 268, 272 are generally elongated cylinders (compared to body portion 252 of ring 102). In the embodiment described in FIG. 2, the legs 268, 272 are arranged in a generally parallel spaced relationship and are configured to mate with the inner ring 208 of the ground shield 162.

  The distance between the legs 268, 272 and the inner ring 208 defines the outer region of the labyrinth gap 250. The inner region of the labyrinth gap 250 is defined between the lip 228 of the shield 162 and the wall 260 and recess 258 of the deposition ring 102. The spacing between the lip 228 and the deposition ring 102 is selected so that deposition on the substrate 104 facing the pedestal assembly 100 is facilitated or minimized.

  The entrance to the inner region of the labyrinth gap 250 is partially covered by the substrate 104 and faces away from the trajectory of the sputtered target material in the inner volume 160, so that deposits in the labyrinth gap 250 are Accumulation and bridging are less likely to occur than in conventional configurations, and the service life until the next cleaning of the processing kit 114 is lengthened. Further, the deposition ring 102 and ground shield 162 of the processing kit 114 are never in contact, thus eliminating potential sources of particle generation. In addition, the deposition ring 102 and ground shield 162 of the processing kit 114 maintain good thermal contact with its support structure (eg, pedestal assembly 100, chamber body 152 / lid assembly 156), so Controllability is improved. The improved thermal controllability allows the stress on the film deposited on the kit 114 to be managed and produces less particles than conventional configurations.

  FIG. 3 is a cross-sectional view of another embodiment of the processing kit 300 in contact with the substrate support pedestal 100. The processing kit 300 typically includes a deposition ring 302 and a ground shield 304 that engage to form a labyrinth gap 350.

  The ground shield 304 is generally similar to the ground shield described above. In the embodiment illustrated in FIG. 3, the shield 304 includes a cylindrical body 306 having an upper surface 308, a lower surface 310, an inner edge 312 and an outer wall 314. The upper surface 308 includes an inclined surface 316. The lower surface 310 of the main body 306 includes inner and outer rings 208 and 210. In one embodiment, the inner edge 312 substantially cuts off the inclined surface 316.

  The deposition ring 302 is generally similar to the deposition ring described above, with the addition of a trap 352 formed on the top surface 254 of the ring 302. Trap 352 is defined between trap wall 360 and upper surface 254 of ring 302.

  The trap wall 360 includes a ring 354 that extends upward from the upper surface 254 of the ring 302 to the lip 356. The lip portion 356 extends inward and downward toward the junction between the inner wall portion 260 and the upper surface 254. Since the distal end of the lip 356 is generally closer to the upper surface 254 than the portion of the lip 356 adjacent to the ring 354, the upper limit of the trap 352 is higher than the distal end of the lip 356. This geometric configuration facilitates the capture of the deposited material and prevents the deposit from accumulating, thus preventing bridging of the gap defined between the lip 356 and the substrate 104.

  In one embodiment, the top surface of the ring 354 includes an inwardly inclined wall portion 264 and an outwardly inclined wall portion 262 that meet at an apex 366. The inwardly inclined wall portion 264 extends downward from the vertex 366 to the lip portion 356. The outward inclined wall portion 262 extends downward from the apex 366 to the outward trap wall portion 368. The outer sloped wall 262 of the deposition ring 302 and the inner edge 312 of the shield 304 define the entrance to the labyrinth gap 350 from the processing region of the internal volume 160.

  The process kit 300 of FIG. 3 separates the edge deposition controller via the trap 352 and the plasma separation feature via the labyrinth gap 350. In addition, this embodiment can reduce manufacturing costs, although this significantly reduces the distance between the inner and outer diameters of the shield 304, but the material required to make the deposition ring 302 that mates with the shield. Because it does not increase so much.

  FIG. 4 is a cross-sectional view of another embodiment of the processing kit 400 in contact with the substrate support base 100. The processing kit 400 typically includes a deposition ring 402 and a ground shield 404 that engage to form a labyrinth gap 450.

  The ground shield 404 is generally similar to the ground shield described above in connection with FIGS. In the embodiment illustrated in FIG. 4, the shield 404 includes a flat cylindrical body 406 having an upper surface 408, a lower surface 410, an inner edge 412 and an outer wall 414. Upper surface 408 includes an inclined surface 416. The lower surface 410 of the main body 406 includes a cylindrical ring 418.

  The cylindrical ring 418 extends downwardly outward and meshes with the deposition ring 402. In the embodiment illustrated in FIG. 4, the direction of ring 418 relative to the centerline of shield 404 is between about 5 and about 35 degrees.

  The deposition ring 402 is generally similar to the deposition ring described above, with the addition of a sloped U channel 420. U channel 420 includes an inner leg 422 that is connected to an outer leg 424 by a bottom 426. The direction of the legs 422, 424 relative to the center line of the ring 402 is about 5 to about 35 degrees. In the embodiment described in FIG. 4, the legs 422, 424 are oriented at the same angle as the cylindrical ring 418 of the shield 404.

  The inner diameter of the distal end of the outer leg 424 is typically selected such that the distal end of the outer leg 424 can pass through without touching the distal end of the ring 418, thereby bypassing the pedestal assembly 100. Even if it is lowered, the shield 404 and the deposition ring 402 are separated without any hindrance, and the substrate can be exchanged smoothly. When the pedestal assembly 100 is raised to the processing position as illustrated in FIG. 4, the legs 422, 424 and the ring 418 define the outer portion of the labyrinth gap 450.

  Optionally, an extension 430 (shown in phantom) may be formed at the distal end of the outer leg 424. The labyrinth gap 450 is lengthened by the extension part 430, and a direction changing part is further added. The extension 430 includes a flange 432 and an end ring 434. The flange 432 extends outwardly from the distal end of the outer leg 424 to the end ring 434. The end ring 434 has an inner diameter that surrounds the outer wall 414 of the shield 404 in a spaced relationship when the pedestal assembly 100 is in the raised position as shown.

  The processing kit 400 of FIG. 4 can be economically manufactured and is advantageous over conventional configurations as described above.

  FIG. 5 is a cross-sectional view of another embodiment of the processing kit 500 in contact with the substrate support pedestal 100. The processing kit 500 typically includes a deposition ring 502 and a ground shield 504 that engage to form a labyrinth gap 550.

  The ground shield 504 is generally similar to the ground shield described above in connection with FIGS. In the embodiment described in FIG. 5, the shield 504 includes a cylindrical body 506 having an upper surface 308, a lower surface 310, an inner edge 312 and an outer wall 314. The upper surface 308 includes an inclined surface 316. The lower surface 310 of the main body 306 includes a cylindrical ring 418. The cylindrical ring 418 extends downwardly outward and meshes with the deposition ring 502.

  The inner portion of the deposition ring 502 is generally similar to the deposition ring 302 described above in connection with FIG. Ring 502 includes a trap 352 formed on top surface 254 of ring 502. Trap 352 is defined between trap wall 360 and upper surface 254. The trap wall portion 360 includes a ring 354, a lip portion 356, and inclined wall portions 262 and 264 that meet at the apex 366.

  The outer portion of the deposition ring 502 is generally similar to the deposition ring 402 described above in connection with FIG. Ring 502 includes a sloped U channel 420. U channel 420 includes an inner leg 422 that is connected to an outer leg 424 by a bottom 426. The leg portions 422 and 424 are configured to mesh with the cylindrical ring 418 of the shield 504 as described above.

  FIG. 6 is a cross-sectional view of another embodiment of the processing kit 600 in contact with the substrate support pedestal 100. The process kit 600 typically includes a deposition ring 620 and a ground shield 662 that engage to form a labyrinth gap 650. Since the deposition ring 620 and shield 622 are substantially similar to the deposition ring 102 and ground shield 162 described above, like features have been given the same reference numerals and are not described in detail for the sake of brevity. Omitted.

  In the embodiment illustrated in FIG. 6, the inner wall 260 of the deposition ring 620 has a substrate support end 622. The substrate support end 622 does not extend radially inward from the inner wall 260. The substrate support end 622 provides a substrate mounting surface and is configured to support the substrate 104 above the surface 244 of the pedestal assembly 100, and in one embodiment is substantially flat and relative to the center line of the ring 620. Right angle. In one embodiment, the height of the inner wall 260 is about 0.45 inches. An additional space may be provided between the pedestal assembly 100 by chamfering the intersection of the inner wall 260 and the lower surface 256 of the deposition ring flange 262 (eg, at an angle of 45 degrees).

  In the embodiment illustrated in FIG. 6, the top surface of the deposition ring 620 can also be textured, as indicated by the dashed line 624. The textured surface improves the adhesion of the material deposited on the ring 620 and prevents particles or flakes of deposited material from easily falling off the ring 620 and becoming a processing contaminant during processing. Such deposited material can be removed from the ring 620 using in situ and / or ex situ cleaning methods. In one embodiment, the ring is textured as described above.

  The ground shield 662 includes a mounting portion 212 having a stepped portion 606 formed at the upper outer diameter 604. A step 606 connects the outer diameter 604 to an upper surface 602 that is substantially horizontal. A transition radius portion 608 connects the outer wall portion 222 of the ground shield 662 to the upper outer wall portion 604.

  As illustrated in FIG. 6, the lip portion 610 extends downward from the upper outer wall portion 604 beyond the transition radius portion 608. The lip 610 reduces the contact area between the processing chamber and the ground shield 662.

  As indicated by the broken line 654, the upper inner surface of the ground shield 662 may also be textured. As described above, by applying texture processing to the surface of the ground shield, the adhesion of the deposited material is improved and does not become a processing contaminant later.

  The lip 228 of the ground shield 662 may also include a recess 612 formed at the transition between the lip 228 and the lower surface 206 of the shield body 202. The recess 612 provides more space between the shield 662 and the ring 620 and can accommodate a large amount of material deposited in the recess 258 of the ring 620.

  Similar to the processing kit described above, the processing kit 600 of FIG. 6 can be manufactured economically and, as described above, is advantageous over conventional configurations.

  Thus, although a processing kit for a PVD processing chamber has been described, the grounding shield and deposition ring of this processing kit are not in contact during operation, which is advantageous because of the low possibility of particulate generation. In addition, the kit's shield and ring maintain contact with the temperature-controlled surface so that the temperature of the process kit can be controlled to reduce and / or eliminate thermal cycling in the material deposited on the process kit. Stress can be managed. Furthermore, the treatment kit of the present invention is attractive in terms of manufacturing cost due to the compact configuration and the elimination of the third ring present in conventional treatment kits.

  While the above is directed to a preferred embodiment of the invention, other and further embodiments of the invention may be made without departing from the basic scope of the invention. It is determined based on the scope of claims.

Claims (28)

A treatment kit comprising a shield that is substantially cylindrical,
Shield
A substantially flat cylindrical body having a top surface that tapers down to the inner end;
At least one elongated cylindrical ring extending downwardly from the body;
A mounting portion extending upward from the upper surface from the outer wall portion of the main body portion, the mounting portion extending radially outward beyond the outer wall portion of the main body portion, and an inner wall portion extending from the upper surface of the main body portion And an inwardly tapered portion that extends radially outward and upward from the inner wall portion.   The processing kit according to claim 1, wherein the main body is made of at least one of stainless steel or titanium.   The processing kit according to claim 1, wherein the main body is made of a conductive material or coated with a conductive material.   The processing kit according to claim 1, wherein a surface treatment is applied to at least a part of the main body.   The processing kit according to claim 1, wherein at least a part of the main body has a bead blasted surface.   The processing kit according to claim 1, wherein the at least one elongated cylindrical ring has a direction perpendicular to a center line of the body portion.   The processing kit of claim 1, wherein the at least one elongated cylindrical ring has a direction of about 5 to about 35 degrees with respect to the centerline of the body portion. At least one elongated cylindrical ring;
With inner ring,
The processing kit of claim 1, comprising an inner ring and an outer ring in a substantially parallel spaced relationship. The mounting part is further
The processing kit according to claim 1, further comprising a lip portion extending downward from an outer diameter of the lunge.   The processing kit according to claim 1, wherein an inner edge portion of the main body portion cuts off the inclined surface, and the inner edge portion is substantially parallel to a center line of the main body portion. Further comprising a deposition ring that is substantially cylindrical;
The deposition ring
A substantially flat cylindrical body having an upper surface and a lower surface configured to be supported on a shelf of the substrate support pedestal;
At least one downwardly extending U channel coupled to an outer portion of the body portion;
An inner wall extending upward from the upper surface of the inner region of the main body and having a substrate support surface;
The processing kit according to claim 1, further comprising a substrate support shelf extending radially inward from the inner wall. The deposition ring
A shelf extending radially inward from the inner wall,
The processing kit according to claim 11, further comprising a plurality of buttons disposed on an upper surface of the shelf and defining a substrate support surface. Multiple buttons
The processing kit of claim 12, comprising three buttons equally spaced on the polar array.   The treatment kit of claim 11, wherein the U channel is configured to mate with at least one ring of the shield. U channel further
A first leg connected to the body portion of the deposition ring;
A second leg spaced outwardly from the first leg;
The processing kit according to claim 11, further comprising a bottom portion joining the leg portions.   The processing kit of claim 15, wherein the legs are substantially parallel to the centerline of the deposition ring.   The processing kit of claim 15, wherein the legs have a direction of about 5 to about 35 degrees relative to the centerline of the deposition ring. The main body of the deposition ring
A trap wall extending upward from the top surface of the deposition ring;
The processing kit according to claim 11, further comprising a lip portion extending inwardly downward from the trap wall portion and projecting on an inward portion of the upper surface of the deposition ring. The top surface of the trap wall
The processing kit according to claim 18, comprising an inwardly inclined wall portion that intersects with the outwardly inclined wall portion at a vertex. Including a deposition ring that is substantially cylindrical;
The deposition ring
A substantially flat cylindrical body having an upper surface and a lower surface configured to be supported on a shelf of the substrate support pedestal;
At least one downwardly extending U channel coupled to an outer portion of the body portion;
A processing kit including an inner wall portion extending upward from an upper surface of an inner region of the main body portion and having a substrate support surface. The deposition ring
A shelf extending radially inward from the inner wall,
21. The processing kit according to claim 20, further comprising a plurality of buttons disposed on an upper surface of the shelf and defining a substrate support surface. Multiple buttons
The processing kit according to claim 21, comprising three buttons arranged at equal intervals in the polar array.   21. A treatment kit according to claim 20, wherein the U channel is upward. U channel further
A first leg connected to the body portion of the deposition ring;
A second leg spaced outwardly from the first leg;
21. The processing kit according to claim 20, further comprising a bottom part joining these leg parts.   The treatment kit of claim 24, wherein the legs are substantially parallel to the centerline of the deposition ring.   The processing kit according to claim 24, wherein the main body is made of at least one of stainless steel or titanium. The main body of the deposition ring
A trap wall extending upward from the top surface of the deposition ring;
21. The processing kit according to claim 20, further comprising a lip portion extending inwardly downward from the trap wall portion and projecting on an inward portion of the upper surface of the deposition ring. The top surface of the trap wall
28. A treatment kit according to claim 27, comprising an inwardly sloping wall portion that intersects the outwardly sloping wall portion at the apex.

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