JP2010251727A - Tape for semiconductor wafer processing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a tape for semiconductor wafer processing such that even when the cutting waste of an adhesive layer etc., is fused between chips, the chips are excellently parted upon expanding to reduce pickup misses such that a chip adjoining a chip to be picked up is picked up together when the target chip is picked up. <P>SOLUTION: The tape 15 for semiconductor wafer processing has a sticking layer 12 and an adhesive layer 13 formed in this order on a base film 11 which does not have no yield point up to an elongation rate of 30% on a stress-elongation rate curve, and has a strength at break of ≥(10 N/10 mm) and an elongation rate at break of ≥200%. The adhesive layer 13 has a strength at break of ≤(3N/10 mm) and an elongation rate at break of 50 to 200%. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to a semiconductor wafer processing tape that is expanded while holding a semiconductor wafer.

As a semiconductor wafer processing tape used in the manufacturing process of a semiconductor device, a die bonding film (also referred to as a die attach film) was laminated as an adhesive layer on a dicing tape provided with an adhesive layer on a base film. A semiconductor wafer processing tape having a structure has been proposed (see, for example, Patent Document 1) and has already been put into practical use.

In the manufacturing process of a semiconductor device, after a semiconductor wafer processing tape is attached to a semiconductor wafer, the semiconductor wafer is cut (diced) into chips using a dicing blade, the semiconductor wafer processing tape is expanded, A step of picking up the cut chip from the adhesive layer together with the adhesive layer, and a step of fixing the chip to the substrate or the like with the adhesive layer attached to the chip are performed.

Japanese Patent Laid-Open No. 02-32181

However, since the adhesive layer is soft and inferior in machinability, whisker-like shavings are generated during dicing, and these shavings are diced together with the base film and the adhesive layer, and are fused between adjacent chips. At the time of picking up, there is a problem that a pickup mistake (double die) occurs in which a chip adjacent to the chip to be picked up is picked up.

Accordingly, an object of the present invention is to provide a semiconductor wafer processing tape that can properly divide between chips during expansion and reduce pick-up errors even when cutting chips such as an adhesive layer are fused between the chips. There is to do.

In order to solve the above problems, the semiconductor wafer processing tape of the present invention is formed on a base film.
A tape for processing a semiconductor wafer in which an adhesive layer and an adhesive layer are formed in this order, and the base film does not have a yield point up to 30% elongation in the stress-elongation curve, and
The breaking strength is 10 N / 10 mm or more, the elongation is 200% or more, the breaking strength of the adhesive layer is 3 N / 10 mm or less, and the elongation is 50% or more and 200% or less.

The base film is preferably selected from polyolefins and polyvinyl chloride that do not have a yield point up to 30% elongation in the stress-elongation curve.

Moreover, it is preferable that the adhesive layer contains at least an acrylic copolymer, an epoxy resin, and a phenol resin, and the phenol resin is a biphenyl novolac type phenol resin having a hydroxyl group equivalent of 200 or more.

Moreover, it is preferable that an adhesive bond layer contains an acrylic copolymer and an epoxy resin at least, and Tg of an acrylic copolymer is 10 degreeC or more.

  Furthermore, the adhesive layer preferably contains 50% or more of an inorganic filler.

The tape for semiconductor wafer processing of the present invention is a material having no yield point up to 30% elongation in the stress-elongation curve as a base film, breaking strength of 10 N / 10 mm or more, and elongation of 200% or more. By using the film consisting of the above, the expanding force is transmitted to the central part of the pressure-sensitive adhesive film and can be stretched well to the central part, and the breaking strength of the adhesive layer is 3 N / 10 mm or less. Can be improved. As a result, even if cutting chips such as an adhesive layer generated at the time of dicing are fused between the chips, the chips can be well divided at the time of expansion, and pickup errors can be suppressed.

It is sectional drawing which shows an example of the tape for semiconductor wafer processing of this invention. It is a graph which shows an example of the stress-elongation rate curve of the base film in the tape for semiconductor wafer processing of this invention. It is a graph which shows the example of the stress-elongation rate curve of the base film in the tape for semiconductor wafer processing concerning a comparative example. (A) is sectional drawing which shows the state by which the semiconductor wafer W and the ring frame were bonded together on the semiconductor wafer processing tape, (b) is sectional drawing which shows the semiconductor wafer processing tape and semiconductor wafer after dicing (C) is a sectional view showing a semiconductor wafer processing tape and a semiconductor wafer after expansion.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
As shown in FIG. 1, the semiconductor wafer processing tape 15 according to the present embodiment has an adhesive film 14 in which an adhesive layer 12 is laminated on a base film 11. This is a dicing die bonding film in which an adhesive layer 13 is laminated thereon. The pressure-sensitive adhesive layer 12 and the adhesive layer 13 may be cut (pre-cut) into a predetermined shape in advance according to the use process and the apparatus. When the adhesive layer 13 pre-cut according to the wafer W (see FIG. 4A) is laminated, the adhesive layer 13 is provided at the portion where the wafer W is bonded, and the ring frame 20 for dicing (FIG. 4). There is no adhesive layer 13 in the portion where (a) is attached, and only the pressure-sensitive adhesive layer 12 is present. Generally, since the adhesive layer 13 is difficult to peel off from the adherend, the ring frame 20 can be bonded to the pressure-sensitive adhesive layer 12 by using the pre-cut adhesive layer 13, and the ring frame 20 after use. The effect that it is hard to produce the adhesive residue on is obtained. Moreover, the semiconductor wafer processing tape 15 of the present invention includes a form cut for each wafer and a form obtained by winding a plurality of long sheets formed in a roll shape. Below, the base film 11, the adhesive layer 12, and the adhesive layer 13 are each demonstrated in detail.

<Base film>
The base film is made of a material having no yield point up to 30% elongation in a stress-elongation curve obtained by a tensile test, and having a breaking strength of 10 N / 10 mm or more and an elongation of 200% or more. By using the base film having such characteristics, the expanding force is transmitted to the central part of the pressure-sensitive adhesive film, and the whole can be stretched satisfactorily. In addition, the base film having no yield point up to 30% elongation in the stress-elongation curve,
This includes a base film in which a yield point does not appear until the breaking point in the curve and a base film in which a yield point exists after an elongation of 30%.

(Stress-elongation curve)
In FIG. 2, an example of the stress-elongation rate curve of the base film of this invention which does not have a yield point by elongation rate 30% is shown. Moreover, in FIG. 3, the example of the stress-elongation rate curve of the base film in which a yield point exists by 30% of elongation rate is shown as a comparative example.

As shown in FIG. 3, the base film of the comparative example has an elongation of 30% in the stress-elongation curve.
The yield point a (the first local maximum point) exists by the time. When such a base film is expanded, the portion that comes into contact with the push-up member yields, and only that portion is stretched and cannot be uniformly stretched to the central portion. On the other hand, the base film of the present invention shown in FIG.
There is no yield point in the stress-elongation curve, and there is no decrease in stress up to the break point b. Thus, by using a base film having no yield point up to an elongation of 30%, the force at the time of expansion propagates to the central part of the pressure-sensitive adhesive film and can be stretched satisfactorily as a whole.

(Breaking strength and elongation)
The base film of the present invention has a breaking strength of 10 N / 10 mm or more and an elongation of 200% or more. When the breaking strength is less than 10 N / 10 mm, the mechanical strength is insufficient, and it is easy to break during expansion. If the elongation is less than 200%, the expandability is poor.

In this invention, breaking strength and elongation rate are obtained by the following tensile tests using the tensile test apparatus based on JISB7721.
Fracture strength: A base film was punched out in a No. 1 dumbbell shape (conforming to JIS K 6301) to create a test piece, and a load at the time of fracture between marked lines at a distance between marked lines of 40 mm and a tensile speed of 300 mm / min (tensile stress) ).
Elongation rate: In breaking strength measurement, the elongation at break is measured.

Although it does not specifically limit as long as it has the said characteristic as a material which comprises the base film 11, It is preferable to be selected from polyolefin and polyvinyl chloride.

Examples of the polyolefin include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic acid. Examples thereof include homopolymers or copolymers of α-olefins such as methyl copolymers, ethylene-acrylic acid copolymers, and ionomers, or mixtures thereof.

In the case of using a type that is cured by radiation irradiation and has a reduced adhesive strength as the pressure-sensitive adhesive layer to be described later, the base film preferably has the above characteristics and is radiation transmissive.
The thickness of the base film is 50 to 30 from the viewpoint of ensuring strength and picking up of the chip.
It is preferably 0 μm. Further, the base film may be a single layer or may be composed of a plurality of layers.

<Adhesive layer>
The pressure-sensitive adhesive layer can be produced by applying a pressure-sensitive adhesive on the base film. The pressure-sensitive adhesive layer is not particularly limited as long as it has a property that the adhesive layer and the semiconductor wafer do not peel off during expansion, and a property that makes it easy to peel off the adhesive layer during pick-up. . In order to improve the pickup property, the pressure-sensitive adhesive layer is preferably radiation-curable.

For example, known chlorinated polypropylene resins, acrylic resins, polyester resins, polyurethane resins, epoxy resins, addition reaction type organopolysiloxane resins, silicon acrylate resins, ethylene-vinyl acetate copolymers, ethylene- Radiation polymerization to various elastomers such as ethyl acrylate copolymer, ethylene-methyl acrylate copolymer, ethylene-acrylic acid copolymer, polyisoprene, styrene / butadiene copolymer and hydrogenated products, and mixtures thereof. It is preferable to prepare a pressure-sensitive adhesive by appropriately mixing an adhesive compound. Various surfactants and surface smoothing agents may be added. The thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but is preferably 5 to 30 μm.

The polymerizable compound is, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation, or a photopolymerizable carbon-carbon double bond group as a substituent. Polymers and oligomers possessed by Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1
, 6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, silicon acrylate, etc., acrylic acid, copolymers of various acrylic esters, and the like are applicable.

In addition to the above acrylate compounds, urethane acrylate oligomers can also be used. The urethane acrylate oligomer includes a polyol compound such as a polyester type or a polyether type, and a polyvalent isocyanate compound (for example, 2, 4
Terminal obtained by reacting tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, diphenylmethane 4,4-diisocyanate, etc. An acrylate or methacrylate having a hydroxyl group on an isocyanate urethane prepolymer (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate, etc.) It is obtained by reacting. The pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins. In addition, the pressure-sensitive adhesive materials listed above have a molecular structure with as many nonpolar groups as possible, such as a trifluoromethyl group, a dimethylsilyl group, and a long-chain alkyl group, when the surface free energy is 40 mJ / m ² or less. It is desirable to include.

In addition, the resin for the pressure-sensitive adhesive layer contains, as appropriate, an acrylic pressure-sensitive adhesive, a photopolymerization initiator, a curing agent, etc. in addition to the radiation polymerizable compound that cures the pressure-sensitive adhesive layer by irradiating the base film with radiation. An adhesive can also be prepared.

When using a photopolymerization initiator, for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl Propane or the like can be used. The blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer.

In addition, if low molecular components are present in the pressure-sensitive adhesive, the low-molecular components may migrate to the surface of the pressure-sensitive adhesive layer during storage for a long time after production of the base film, which may impair the adhesive properties. The gel fraction is desirably high and is usually 60% or more, preferably 70% or more. Here, a gel fraction means what is calculated as follows. About 0.05 g of the pressure-sensitive adhesive layer is weighed and immersed in 50 ml of xylene at 120 ° C. for 24 hours, filtered through a 200 mesh stainless steel wire mesh, and the insoluble matter on the wire mesh is dried at 110 ° C. for 120 minutes. Next, the mass of the dried insoluble matter is weighed, and the gel fraction is calculated by the following formula (1).
Gel fraction (%) = (mass of insoluble matter / mass of weighed pressure-sensitive adhesive layer) × 100 Formula (1)

<Adhesive layer>
When the chip is picked up after the semiconductor wafer is bonded and cut, the adhesive layer is peeled off from the adhesive layer and attached to the chip, and the chip is attached to the package substrate or lead frame. It functions as a bonding film when it is fixed to.

The adhesive layer has a breaking strength of 3 N / 10 mm or less and an elongation of 50% or more and 200% or less. By using an adhesive layer having such characteristics, the breakability is improved. When the elongation percentage is less than 50%, it is difficult to bond to the wafer and the adhesion cannot be maintained, and chip skipping occurs during dicing. When the elongation rate exceeds 200%, whisker-like cutting waste is generated during dicing, and these cutting wastes are fused between adjacent chips together with the cutting waste of the base film and the adhesive layer, resulting in a double die. End up.

The adhesive layer is obtained by forming a film of an adhesive in advance. For example, a known polyimide resin, polyamide resin, polyetherimide resin, polyamideimide resin, polyester resin, phenoxy resin, or acrylic copolymer used for the adhesive is used. A polymer, butadiene rubber, silicone resin, polyurethane resin, epoxy resin, polyacrylamide resin, melamine resin, or a mixture thereof can be used, but in order to improve the dividing property of the adhesive layer 13, an acrylic copolymer is used. A polymer, an epoxy resin and its curing agent are included, and the acrylic copolymer has a Tg of 10
It is preferable that the temperature is not lower than ° C. Furthermore, it is preferable to contain 50% or more of an inorganic filler. Moreover, in order to reinforce the adhesive force with respect to a chip | tip or a lead frame, it is desirable to add a silane coupling agent or a titanium coupling agent to the said material and its mixture as an additive. Although the thickness of an adhesive bond layer is not specifically limited, Usually, about 5-100 micrometers is preferable.

The epoxy resin is not particularly limited as long as it cures and exhibits an adhesive action, but an epoxy resin having two or more functional groups, preferably having a molecular weight of less than 5000, more preferably less than 3000 can be used. Further, an epoxy resin having a molecular weight of preferably 500 or more, more preferably 800 or more can be used.

For example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy Resin, diglycidyl etherified product of biphenol, diglycidyl etherified product of naphthalenediol, diglycidyl etherified product of phenol, diglycidyl etherified product of alcohol, and alkyl-substituted products, halides, hydrogenated products, etc. And a novolak-type epoxy resin. Moreover, what is generally known, such as a polyfunctional epoxy resin and a heterocyclic ring-containing epoxy resin, can also be applied. These can be used alone or in combination of two or more. Furthermore, components other than the epoxy resin may be included as impurities within a range that does not impair the characteristics.
As a hardening | curing agent of an epoxy resin, it does not specifically limit and a well-known thing can be used.
Examples thereof include a phenolic resin, an amine curing agent, an acid anhydride curing agent, and a latent curing agent such as dicyandiamide. Of these, phenolic resins are particularly preferred in terms of heat resistance, electrical properties (no hydrolyzability) and the like. Examples of phenolic resins include phenolic resins such as phenol novolac type, xylylene novolak type, bis A novolak type, triphenylmethane novolak type, biphenyl novolak type, and dicyclopentadiene phenol novolak type. Among these, biphenyl novolac type phenol resin is particularly preferable from the viewpoint of low water absorption and adhesion. Even when the elongation at break is reduced by using this, good adhesion to silicon can be maintained. Moreover, since the water absorption rate is low, it is possible to suppress deterioration in pick-up property over time that occurs when the semiconductor wafer processing tape is left unattended.
Moreover, when using an epoxy resin and a hardening | curing agent, a hardening accelerator etc. can also be used as an adjuvant. There is no restriction | limiting in particular as a hardening accelerator which can be used for this invention, For example, imidazoles, a quaternary ammonium salt, etc. can be used.

As the acrylic copolymer, for example, an epoxy group-containing acrylic copolymer can be used. The epoxy group-containing acrylic copolymer contains 0.5 to 6% by weight of glycidyl acrylate or glycidyl methacrylate having an epoxy group. In order to obtain a high adhesive strength, 0.5% by weight or more is preferable, and gelation can be suppressed if it is 6% by weight or less.

The amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is a copolymer ratio of 0.5 to 6% by weight. That is, in the present invention, the epoxy group-containing acrylic copolymer is glycidyl acrylate or glycidyl methacrylate as a raw material.
This refers to a copolymer obtained using an amount of 0.5 to 6% by weight based on the obtained copolymer. The remainder can be a mixture of alkyl acrylate having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, alkyl methacrylate, and styrene or acrylonitrile. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable. The mixing ratio is preferably adjusted in consideration of the Tg of the copolymer. There is no restriction | limiting in particular in a polymerization method, For example, pearl polymerization, solution polymerization, etc. are mentioned, A copolymer is obtained by these methods. The weight average molecular weight of the epoxy group-containing acrylic copolymer is 100,000 or more, and adhesiveness and heat resistance are high in this range,
It is preferably 300,000 to 3,000,000, more preferably 500,000 to 2,000,000.
If it is 3 million or less, the flowability is lowered, and thus the possibility that the filling property to the wiring circuit formed on the support member to which the semiconductor element is attached is lowered as required can be reduced.
In addition, a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).

There are no particular restrictions on the inorganic filler. For example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitriding Examples thereof include boron, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more. In order to improve thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. Silica is preferable from the viewpoint of balance of properties.

The average particle size of the filler is preferably 0.1 to 10 μm, more preferably 0.3 to 3 μm, and further preferably 0.5 to 2 μm. When the average particle size of the filler is less than 0.1 μm, the wettability and fluidity to the adherend tend to decrease, and the adhesion tends to decrease. When the average particle size exceeds 10 μm, a smooth surface cannot be obtained when forming a film. , Voids are likely to be mixed in, and the chip is damaged by a coarse filler. In addition, in this invention, an average particle diameter means the average value calculated | required from the particle size of 100 fillers measured by TEM, SEM, etc.

In order to set the breaking strength to 3 N / 10 mm or less, the filler content should be increased and the acrylic polymer content should be decreased. The filler content should be 40 to 70 parts by weight of the total amount, and the acrylic polymer content The amount is preferably 20 to 50 parts by weight in 100 parts by weight of the component excluding the filler. Moreover, in order to make elongation rate 200% or less, it is good to increase content of an epoxy resin solid at normal temperature other than increase of filler content, and it is 100-500 with respect to 100 weight part of acrylic polymers. It is preferable to use parts by weight.

Next, a method for manufacturing a semiconductor chip with an adhesive layer using the semiconductor wafer processing tape 15 of the present invention shown in FIG. 1 will be described with reference to FIG.

(Bonding process)
First, as shown in FIG. 4A, the back surface of the semiconductor wafer W is bonded to the adhesive layer 13 of the semiconductor wafer processing tape 15 and the ring frame 2 is placed at a predetermined position of the adhesive layer 12.
Paste 0.

(Dicing process)
The wafer processing tape 15 is sucked and supported from the surface of the base film 12 by the suction stage 22, and the semiconductor wafer W is mechanically cut using a blade (not shown) and divided into a plurality of semiconductor chips C (FIG. 4). (B)). At this time, the adhesive layer 13, the pressure-sensitive adhesive layer 12, and a part of the base film 11 are also appropriately diced.

(Irradiation process)
Then, the pressure-sensitive adhesive layer 12 is cured by irradiating the pressure-sensitive adhesive layer 12 with radiation from the lower surface of the base film 11. Since the adhesive force of the cured adhesive layer 12 is reduced, the adhesive layer 13 on the adhesive layer 12 can be peeled off. When the pressure-sensitive adhesive layer is composed of a plurality of layers, it is not necessary to cure the entire pressure-sensitive adhesive layer in order to peel the adhesive layer 13 from the pressure-sensitive adhesive layer 12, and at least the pressure-sensitive adhesive layer portion corresponding to the wafer is formed. It may be cured.

(Expanding process)
After the irradiation step, the semiconductor wafer processing tape 15 holding the plurality of divided semiconductor chips C is placed on the stage 21 of the expanding apparatus. Then, as shown in FIG. 4C, the hollow cylindrical push-up member 23 is raised from the lower surface side of the semiconductor wafer processing tape 15, and the adhesive film 14 is stretched in the circumferential direction of the ring frame 20. Here, there is no yield point up to 30% elongation in the stress-elongation curve, and the breaking strength is 10 N /
Since the base film 11 made of a material having a length of 10 mm or more and an elongation rate of 200% or more is used, the expanding force is transmitted to the central portion of the pressure-sensitive adhesive film 14 and can be satisfactorily stretched to the central portion. Moreover, since the adhesive layer 13 having a breaking strength of 3 N / 10 mm or less is used, the adhesive can be easily divided. Therefore, even when the chips C adjacent to each other after the dicing process are re-bonded through the cuttings such as the adhesive layer 13 generated in the dicing process, the adhesive film 14 is bonded when the adhesive film 14 is stretched during the expansion. The agent is easily divided.

(Pickup process)
After carrying out the expanding step, a picking up step for picking up the chip C is carried out with the adhesive film expanded. Specifically, the chip is pushed up from the lower side of the adhesive film with a pin, and the chip C is picked up together with the adhesive layer 13 by adsorbing the chip C with an adsorption jig from the upper surface side of the adhesive film. . At this time, each chip C is picked up along with the adjacent chip C because the cutting waste such as the adhesive layer 13 and the like existing between the adjacent chips C is well divided by the expanding process. Pick-up mistakes can be reduced.

(Die bonding process)
Then, after performing the pickup process, the die bonding process is performed. Specifically, a semiconductor device is manufactured by bonding a semiconductor chip to a lead frame, a package substrate, or the like by an adhesive layer picked up together with the chip C in a pickup process.

As described above, even if cutting chips such as an adhesive layer generated during dicing are fused between chips, the chips can be well separated during expansion, and pickup errors can be suppressed.

Next, examples of the present invention will be described, but the present invention is not limited to these examples.

(Adhesive film)
The adhesive films A, B, and C shown in Table 1 were coated with an adhesive layer composition dissolved in an organic solvent so that the dry film thickness was 10 μm, and dried at 110 ° C. for 3 minutes. B, C
Was made. As the pressure-sensitive adhesive layer composition, carbon-carbon 2-bond-containing acrylic copolymer (molecular weight: 300,000 Mw, Tg: -20 ° C.) 100 parts by weight, curing agent (isocyanate compound) 3 parts by weight, photoinitiator (1 An acrylic radiation-curable pressure-sensitive adhesive composition comprising 2 parts by weight of (hydroxy-cyclohexyl-phenyl-ketone) was used.

(Adhesive film)
An adhesive layer composition containing each component in the ratio shown in Table 2 was prepared by adding to an organic solvent to obtain a coating solution. This coating solution was applied onto a release-treated polyethylene terephthalate (PET) film and dried by heating at 130 ° C. for 3 minutes to prepare B-staged adhesive films 1 to 4 having a film thickness of 20 μm. The acrylic polymer (1) in Table 2 has a molecular weight of 800,000 Mw,
An acrylic copolymer and an acrylic polymer (2) having a glass transition temperature of 5 ° C. are acrylic copolymers having a molecular weight of 700,000 Mw and a glass transition temperature of 15 ° C. The epoxy resin (1) is a liquid bisphenol A type epoxy resin having an epoxy equivalent of 180 to 200, an epoxy resin (
2) is an o-cresol novolac type epoxy resin having an epoxy equivalent of 210 to 230. The curing agent (1) is a novolak type phenol resin having a hydroxyl group equivalent of 160 to 190, the curing agent (2) is a biphenyl novolac type phenol resin having a hydroxyl group equivalent of 204 to 208, and the curing agent (3) is an imidazole compound (2- Phenyl 4,5-dihydroxymethylimidazole). The silica filler (1) is spherical synthetic silica having an average particle diameter of 2 μm, and the silica filler (2) is spherical synthetic silica having an average particle diameter of 0.5 μm.

(Examples and comparative examples)
The pressure-sensitive adhesive films A to C and the adhesive films 1 to 4 have a diameter of 370 mm and 320 mm, respectively.
The adhesive layer of the adhesive film and the adhesive layer of the adhesive film were bonded together. Finally, the PET film of the adhesive film was peeled from the adhesive layer to obtain dicing die bonding films (Examples 1 to 6 and Comparative Examples 1 to 8) having combinations shown in Table 3.

<Tensile test>
About the adhesive layers of the base films A, B, C and the adhesive films 1 to 4, using a tensile test apparatus (conforming to JIS B 7721), the temperature is 24 ± 2 ° C., the humidity is 64 ± 5%, and the following: Such a tensile test was conducted. These results are shown in Table 2.

(Breaking strength)
Each base film and each adhesive layer are punched out in No. 1 dumbbell shape (conforming to JIS K 6301) to create a test piece, and the load at the time of fracture between marked lines at a marked line distance of 40 mm and a tensile speed of 300 mm / min. (Tensile stress) was measured.

(Growth rate)
In the above breaking strength measurement, the elongation at break was measured.

(Yield point of base film)
Moreover, about each base film, the presence or absence of the yield point to elongation rate 30% was confirmed from the stress-elongation rate curve obtained by the tension test.

<Pickup test 1>
The dicing die bonding film according to each example and comparative example is a wafer (1
After heat bonding to (00 μm thickness), dicing was performed to 10 × 10 mm. Thereafter, the adhesive layer was irradiated with 200 mJ / cm 2 of ultraviolet rays with an air-cooled high-pressure mercury lamp within 5 hours, and then subjected to a pick-up test using a die bonder device (manufactured by NEC Machinery) (expansion amount of dicing die bonding film 7 mm). Pickup failure rate (individual)
Pick up mistake). These results are shown in Table 2.
<Pickup test 2>
The test was conducted in the same manner as the pickup test 1 except that the dicing die bonding film was first subjected to moisture absorption treatment at 30 ° C./80%/48 h.
<Pickup test 3>
The test was conducted in the same manner as the pickup property test 1 except that ultraviolet rays were irradiated after being left at 23 ° C. for 168 hours after dicing.
<Measuring method of tip skip>
The dicing die bonding film according to each example and comparative example is a wafer (1
And then dicing to 2 × 2 mm at a speed of 100 mm / sec.
At this time, the chip jump was determined by the established percentage (/ 100 chip).

In Comparative Examples 1 to 7, the adhesive between the fused chips was not divided at the time of expansion, so that a pickup error due to a double die occurred. In Comparative Example 8, chip skipping occurred. On the other hand, in Examples 1-6, since the adhesive between the chips fused at the time of expansion was divided, pickup errors were reduced.

11: Base film 12: Adhesive layer 13: Adhesive layer 14: Adhesive film 15: Semiconductor wafer processing tape 20: Ring frame 21: Stage 22: Adsorption stage 23: Push-up member

Claims (5)

On the base film, a pressure-sensitive adhesive layer and an adhesive layer are formed in this order, a semiconductor wafer processing tape,
The base film has no yield point up to 30% elongation in the stress-elongation curve, and has a breaking strength of 10 N / 10 mm or more and an elongation of 200% or more.
A tape for processing a semiconductor wafer, wherein the adhesive layer has a breaking strength of 3 N / 10 mm or less and an elongation of 50% to 200%. 2. The semiconductor wafer processing according to claim 1, wherein the base film is made of a polyolefin and polyvinyl chloride having no yield point up to 30% elongation in a stress-elongation curve. Tape. The adhesive layer includes at least an acrylic copolymer, an epoxy resin, and a phenol resin, and the phenol resin is a biphenyl novolac type phenol resin having a hydroxyl group equivalent of 200 or more. The tape for semiconductor wafer processing as described The said adhesive bond layer contains an acrylic copolymer and an epoxy resin at least, and the glass transition temperature Tg of an acrylic copolymer is 10 degreeC or more, The any one of Claims 1-3 characterized by the above-mentioned. The semiconductor wafer processing tape according to Item. The tape for semiconductor wafer processing according to any one of claims 1 to 4, wherein the adhesive layer contains 50% or more of an inorganic filler.

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