JP2010045471A - Low impedance loss line - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a transmission line structure achieving a function of an ideal power supply that includes a very low impedance value and a very small transmission coefficient value up to a band exceeding several-hundreds [kHz] to 1 [GHz], and can not be provided by a capacitor. <P>SOLUTION: The low impedance loss line is formed of: an anode foil 24 composed of a valve acting metal and having etching portions formed on both surfaces and dielectric oxide films formed on the surfaces of the etching portions; a first cathode foil 21; a second cathode foil 27; first and second conductive polymer layers 23, 25 respectively formed on the dielectric oxide films formed on both the surfaces of the anode foil 24; a fist conductive polymer past layer 22 for sticking the first cathode foil 21 to the first conductive polymer layer 23; and a second conductive polymer past layer 26 for sticking the second cathode foil 27 to the second conductive polymer layer 25. The loss line forms a parallel line using the first and second cathode foils 21, 27 as electrodes. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention relates to a circuit or a circuit component, and in particular, is used for a power converter such as a high-frequency DC-DC converter and a DC power distribution circuit of an information technology apparatus and a digital data communication device using a high-speed switching element. The present invention relates to a low-impedance loss line that can be converted and can improve conversion efficiency, signal quality (signal integrity), and electromagnetic compatibility (EMC).

In recent years, there is a strong demand for high performance and downsizing of digital circuit systems including computers. The speeding up of transistors constituting a digital circuit system is effective for higher performance and miniaturization, but it has been considered that electromagnetic noise and power consumption increase.

In IEC, work toward the establishment of CISPR32, which is a new EMI standard, for information technology devices and multimedia devices is progressing. In this case, the restriction target is 320 [MHz] to 6 [GHz] for the radiated disturbance wave from the apparatus or device, and 150 [kHz] to 30 [MHz] for the conductive disturbance wave caused by the power line and the communication line. The allowable value is the same as that of the CISPR 22 for the conventional information technology apparatus, but the application target is extended to a multimedia device including a digital home appliance.

On the other hand, in semiconductor integrated circuits that are at the forefront of semiconductor technology, the speed of transistors is increasing. According to Non-Patent Document 1, the minimum rise time (gate delay) of the P-channel field effect transistor of the high-performance MPU in the technology node in 2007 is 0.64 [ps] (picosecond), and the power supply voltage is 1. 1 [V].

According to electromagnetism, circuit states can be considered as active states (exited states), steady states (stationary states), and quasi-steady states (quasi-stationary states that can be regarded as steady states in practice).
There are stationary states. The active state is a state in which the electric field and magnetic field on the circuit are changing or oscillating, and an AC circuit is one example. The oscillating electric and magnetic fields travel as electromagnetic waves in the insulator. When the insulator is a vacuum space, the electromagnetic wave travels at the speed of light.

The steady state is a state where the electric field and magnetic field on the circuit are stationary, and a DC circuit is an example. The quasi-stationary state means that the electric field and magnetic field travel on the circuit as electromagnetic waves, but the wavelength of the electromagnetic waves is very long relative to the circuit length, and even if the behavior of the electromagnetic waves in the circuit is regarded as only strong and weak vibrations, This is a state that is considered to cause almost no inconvenience in the field path design. An example of a circuit that can be regarded as a quasi-stationary state in practice is a low-frequency analog circuit or a circuit composed of a transistor having a rise time of approximately 1 [ns] and a wiring having a length of 10 [cm] or less. It has been said that.

According to electromagnetics, the current in a circuit in an active state is defined as Ampere's law and is given by

According to electromagnetism, the electric potential V is defined as an integral value of an electric field from an infinite point where the electric field does not reach to one point of the conductor, but practically as an integral value of the electric field from the ground plane to one point of the conductor, E is obtained from the following equation as the slope of the potential V.

Maxwell published Maxwell's equation, which merged the theory of magnetic fields and the theory of electric fields, in 1873, and then transformed this equation into the form of D'Alembert's wave equation to derive the vector wave equation. Maxwell, who had been insisting since 1862, theoretically proved that both electromagnetic waves and light propagate at the speed of light using this equation, and completed linear electromagnetic wave theory (hereinafter referred to as electromagnetic wave theory). Was completed. In 1887, Hertz demonstrated the existence of electromagnetic waves by experiment and proved the correctness of Maxwell's electromagnetic wave theory.

According to electromagnetism, an electric field and a magnetic field that change with time interact with each other and propagate in a space or a dielectric as a transverse wave. The speed of the electromagnetic wave propagating in the vacuum is the speed of light. The propagating electromagnetic wave propagates power according to the pointing vector theory. An electromagnetic wave propagating in space is composed of an electric field wave and a magnetic field wave whose period and polarity coincide and whose amplitude vector is orthogonal to the traveling direction. The electromagnetic wave in this state is called a TEM (transverse electromagnetic) wave. According to electromagnetism, an electric field and a magnetic field that change with time interact with each other and propagate in a space or a dielectric as a transverse wave. The speed of the electromagnetic wave propagating in the vacuum is the speed of light. The propagating electromagnetic wave propagates power according to the pointing vector theory. An electromagnetic wave propagating in space is composed of an electric field wave and a magnetic field wave whose period and polarity coincide and whose amplitude vector is orthogonal to the traveling direction. The electromagnetic wave in this state is called a TEM (transverse electromagnetic) wave. The value obtained by dividing the amplitude of the electric field wave constituting the TEM wave by the amplitude of the magnetic field wave is the wave impedance (surge
impedance or wave impedance).

According to electromagnetism, electromagnetic waves travel not only in space but also in media. The speed of the electromagnetic wave traveling through the lossless dielectric is slowed by the square root of the relative permittivity with respect to the speed of light, and the wavelength is shortened by the square root of the relative permittivity. The latter is called wavelength compression.

According to electromagnetism, an electromagnetic wave traveling in a lossy medium follows an attenuation constant γ expressed by the following equation, and the amplitude decreases and the phase changes with progress.

In Equation (3), α, which is a real term of γ, is called an attenuation constant, and β, which is an imaginary term of γ, is called a phase constant. α is expressed in units of nep / m (neper / meter). 1
[nep / m] means that the amplitude decreases by exp- ¹ or 0.368 times after proceeding 1 meter.

According to electromagnetics, the term in parentheses in the following equation obtained by transforming γ ² in equation (3) is defined as the complex permittivity for a lossy dielectric, and the imaginary part (σ / ε ₀ ω) is defined as The value divided by the real part (ε _r ) is called the dielectric loss tangent and is represented by tan δ. However, tan δ has no deep meaning in electromagnetics.

When the electromagnetic wave travels in the conductor, there is no electric charge acting on the electromagnetic wave in the conductor, and the conductivity σ is much larger than ωε, so γ is expressed by the following equation. Δ, which is the reciprocal of the attenuation constant α in the following equation, is called the skin thickness.

According to electromagnetics, the intrinsic impedance Z _0, which is the ratio of the electric field to the magnetic field of the electromagnetic wave traveling in the conductor, is assumed to be very large compared to ωε in the intrinsic impedance in a lossy medium. Given.

In the active state or quasi-stationary state where the electric and magnetic fields on the circuit are changing or oscillating, the electromagnetic wave theory dominates the circuit, and in this case, it is difficult for the electromagnetic wave to travel through the conductor. However, in a steady state where the electric and magnetic fields on the circuit are stationary, a current can flow through the conductor due to the movement of charges.

According to physics, there are almost inexhaustible free electrons or charges in the conductor. When a static load is connected to the DC power supply, a current flows due to the movement of the charge in the conductor, but generally only a small electric field is applied in the direction of the movement axis of the charge, so the average movement speed of the charge is extremely slow. .

For example, when a current of 10 amperes defined by a charge velocity (dq / dt) in a conductor is traveling in a copper wire having a cross section of 1 square millimeter, the current progression rate is calculated according to physics It becomes 0.368 [mm / s] at room temperature. Since the charge in the conductor can move although it is slow, if the same amount of charge is constantly supplied from one end of the conductor when the charge is constantly consumed at the other end of the conductor, Energy supply to a steady load such as a resistor connected to the other end is performed without any trouble.

Telecommunications engineering handles the progression of electrical signals on transmission lines. According to telecommunications engineering, when an electric signal is applied between two DC-insulated conductors, the electric signal becomes a current wave and a voltage wave and travels through the transmission line.

In telecommunications engineering, as in AC circuit theory, the current is the average charge velocity (dq / dt) in the conductor, that is, the conductor current. However, in Maxwell's equations that form the basis of electromagnetism, the conductor current corresponds to a current density J that is not a function of time.

The AC circuit theory and telecommunications engineering define the current as dq / dt for the following reasons. Kirchhoff's law, one of the important laws supporting AC circuit theory, was announced in 1845, Maxwell theoretically proves the existence of electromagnetic waves, and Hertz confirms the existence of electromagnetic waves by experiments42 Years ago. The telegraph equation, one of the important theories supporting telecommunications engineering, was developed in 1874, 13 years before the existence of electromagnetic waves was confirmed. Therefore, at the time when AC circuit theory and telecommunications engineering were put into practical use, there was no idea that the action of the circuit was the action of electromagnetic waves. Furthermore, the theory was not revised after that.

In the telegraph equation that forms the basis of telecommunications engineering, the basis of the fact that the conductor current can flow at the speed of light is the D'Alembert wave equation. In D'Alembert's wave equation, a wave function is represented by a vector function with the Laplacian of a scalar quantity, and the wave's subject is not specified. Since the fact that the conductor current becomes a wave with the voltage between conductors is consistent with the electromagnetism governing the electric circuit, the telegraph equation obtained by comparing the circuit equation for voltage and current with the D'Alembert wave equation is the electromagnetism Is irrelevant and inconsistent with electromagnetism.

If the definition of current does not match electromagnetism, there may be a situation that contradicts electromagnetism in terms of line voltage, impedance, electromagnetic wave relationships, and transmission loss. Such problems are inherent in telecommunications engineering, but due to its long history and abundant track record of application to transmission line design, conventional transmission line design for continuous wave is inconsistent with electromagnetics. The idea is taken so that it may not become.

In transmission line design for intermittent waves such as switching waves or digital waves, the idea of being efficient based on telecommunications engineering is dominant. However, since there is little practical experience with digital circuits in telecommunications engineering, the contradiction with electromagnetism may become apparent unless careful design and analysis are performed in comparison with electromagnetism.

According to electromagnetics, an electromagnetic wave applied to a transmission line composed of two insulated conductors enters a TEM mode and travels at a quasi-light speed. If the insulation is vacuum, the traveling speed is high. At this time, the current and voltage observed in the transmission line are obtained from the equations (1) and (2), respectively, and the actual state is not the conductor of the transmission line but the electric field wave and magnetic field wave traveling through the insulator. According to telecommunication engineering, the characteristic impedance is a value obtained by dividing the amplitude of the electric field wave constituting the TEM wave on the transmission line by the amplitude of the magnetic field wave.

According to electromagnetism and telecommunications engineering, the behavior of a signal traveling on a transmission line is determined by the characteristic impedance and propagation constant of the transmission line. The material properties of the flat conductor and the insulator have little practical effect on the characteristic impedance of the transmission line.

According to the telecommunications engineering, the characteristic impedance of the Rehel line having a structure in which the centers of two conductors having a diameter a are arranged in parallel with a distance d can be obtained from the following equation.

According to telecommunications engineering, the characteristic impedance of practical microstrip lines and parallel plate lines can be obtained from the following equation.

According to telecommunications engineering, when electromagnetic waves are injected into a transmission line having an unknown characteristic impedance Z ₁ through a transmission line having a known characteristic impedance Z ₀ ,
The reflection coefficient S ₁₁ at the connection point of the two transmission lines is expressed by the following equation.

According to telecommunications engineering, reflection coefficient is S _11, the transmission coefficient S _21Ganma between lines is expressed by the following equation.

According to telecommunication engineering, the transmission coefficient S _21α of the loss line exceeding the attenuation constant α1 is expressed by the following equation.

According to electromagnetics, the practical transmission line attenuation constant is determined by the attenuation when the electromagnetic wave travels through a lossy dielectric body, and part of the electromagnetic wave penetrates into the conductor in the course of the electromagnetic wave traveling through the dielectric. It can be considered that this is the sum of the conductor loss and the radiation loss leaking out of the transmission line.

Wiring design of high-speed digital data communication equipment is performed according to telecommunication engineering. However, telecommunications engineering is suitable for transmission line design that handles continuous waves such as sine waves, but as mentioned above, transmission line design that handles intermittent waves such as digital signals is not suitable because of inconsistencies with electromagnetics. .

DC power supplies in high-speed digital data communication equipment and high-frequency power converters are considered to supply charges to the circuit.

According to electromagnetism, Maxwell modified Coulomb's law, assuming that the force acting on the unit (test) point charge is due to the electric field where the unit point charge exists. This fact is not well known.

According to the modified electromagnetics, the electrostatic energy w _E related to the electric field is expressed by the following equation.

Thus, the electrostatic energy w _E is not carried by the electric charge but is accumulated in the medium as the product of the electric field E and the electric flux density D or the electric field E.

The electrostatic energy w _C stored in the capacitor having the capacitance C to which the voltage V is applied is expressed by the following equation, where d is the electrode distance and S is the electrode area.

According to electromagnetism, the magnetostatic energy w _H relating to the magnetic field is assumed to be accumulated in the medium as the product of the magnetic field and the magnetic flux density, and is expressed by the following equation.

The magnetostatic energy w _L stored in the reactor of the induction L to which the current I is applied is expressed by the following equation, where l is the magnetic path length of the reactor and S is the cross-sectional area of the magnetic path.

According to the isolated electromagnetic wave concept shown in Non-Patent Document 4 and Non-Patent Document 5, the transistor in the semiconductor integrated circuit excites an isolated electromagnetic wave, which is a kind of nonlinear wave or soliton, at the moment of switching. The same applies to the transistors in the circuit module constituting the digital circuit system.

The excitation mechanism of isolated electromagnetic waves during the switching operation of the transistor was caused by suddenly opening a sluice (gate) containing water in various experiments conducted by John Scott Russell in 1834 when he discovered solitons. It is very similar to the generation mechanism of solitons and the tsunami generation process that has been confirmed to be a kind of solitons.

According to the isolated electromagnetic wave concept, at the moment when the transistor switches from OFF to ON, the potential of the transistor becomes a value obtained by dividing the voltage of the DC power supply by the characteristic impedance of the power supply line and the signal line. Therefore, isolated electromagnetic waves with a polarity that lowers the voltage to the divided voltage are excited on the power line, and isolated electromagnetic waves with a polarity that raises the voltage to the divided voltage are excited simultaneously on the signal line, and the isolated amplitude vectors are orthogonal to each other according to the electromagnetic wave theory. It travels on the transmission line with electric field waves and solitary magnetic field waves.

FIG. 1 is an example of an electromagnetic wave equivalent circuit related to an inverter.

In Figure 1, an inverter 1 is connected to the middle of the transmission line of the characteristic impedance Z _0, the transmission line 5 of the characteristic impedance Z ₀ is connected between the DC power supply 4 and the inverter 1 constitutes a power line, The transmission line 6 having the characteristic impedance Z ₀ is connected between the inverter 1 and the matching termination resistor 7 to constitute a signal line. Inverter 1 is a P-channel MOS
Complementary configuration with FET 2 and N-channel MOS FET 3.

In FIG. 1, the on state of the inverter 1 is a state in which the P channel MOS FET 2 is on and the N channel MOS FET 3 is off, and the off state of the inverter 1 is the opposite. The relationship between the magnetic field and the current and the relationship between the electric field and the potential with respect to the TEM wave traveling through the transmission line are shown as the amperage law and the definition of the potential in electromagnetics, respectively.

FIG. 2 is an example of a potential waveform and an electric field waveform on the power supply side on the line. FIG. 3 shows an example of a potential waveform and an electric field waveform on the resistance side on the line.

FIG. 2 shows a potential waveform 9 on the transmission line 6 when the inverter 1 is on, and an electric field waveform 8 that travels on the transmission line 6 obtained by back calculation from the definition of the potential shown in electromagnetics. FIG. 3 shows a potential waveform 11 on the transmission line 5 when the inverter 1 is on, and an electric field waveform 10 that travels on the transmission line 5 on the power source side, which is obtained by calculating backward from the definition of the potential indicated in electromagnetics.

As shown in FIGS. 2 and 3, the waveform of the electric field generated by the switching of the inverter 1 is the reciprocal of the product of the rise time and the circumference determined by regarding the tangent of the maximum slope of the rise waveform of the transistor as the rise waveform. It approximates a half waveform of a sine wave having an effective frequency defined by the required frequency. To quote the concept of effective frequency, the accuracy of the approximation is expected to be 92% or more. Therefore, practically, it can be performed at an effective frequency as far as design is concerned.

1 to 3, when the inverter 1 is turned on, the potentials at points B and C in FIG. 1 are equal to E / 2 [V]. The isolated electric field wave 8 that travels on the transmission line 6 and the isolated electric field wave 10 that travels on the transmission line 5, which are excited by the inverter 1, travel in opposite directions with respect to the inverter 1. The isolated electric field wave 8 traveling on the transmission line 6 travels while increasing the potential of the transmission line 6 from 0 [V] to E / 2 [V], and travels toward the matching termination resistor 7. On the other hand, the isolated electric field wave 10 traveling on the transmission line 5 is an insulator that constitutes the transmission line toward the DC power source 4 while lowering the potential of the transmission line 5 from E [V] to E / 2 [V]. Proceeds with quasi-light speed.

According to the isolated electromagnetic wave concept, the wavelength of the isolated electromagnetic wave traveling on the transmission line is defined by the following equation.

Conventional power supply decoupling circuits or circuit components are described in the following patent documents and non-patent documents. The point will be described later.
JP 2002-260965 (P2002-260965A) JP-A-2005-294449 (P2005-294499A) JP2007-42732 (P2007-42732A) JP 2002-164760 (P2002-164760A) JP-A-2004-048650 (P2004-048650A) Hirokazu Tohya and Noritaka Toya, "A NovelDesign Methodology of the On-Chip Power Distribution Network Enhancing the Performance and Suppressing EMI of the SoC", IEEE International Symposium on Circuits and Systems 2007, pp. 889-892, May 2007. Hirokazu Toya, Norio Naoya Toya “New design method of on-chip power distribution circuit that greatly improves SoC performance and EMC”, IEICE Technical Report, Vol.107, No.149, EE2007-20, pp .73-78, July 2007. Stephan Kirchmeyerand Knud Reuter, `` Scientific importance, properties and growing applications of poly (3,4-ethylendioxythiophene), The Royal Society of Chemistry, Journal of Materials Chemistry., 2005, pp. 2077-2088, 2005.

The first problem to be solved relates to Patent Document 1. Patent Document 1 discloses a detailed manufacturing method for a solid electrolyte layer in order to provide a method for manufacturing a solid electrolytic capacitor capable of obtaining a solid electrolytic capacitor having good characteristics by a simple manufacturing process. However, the purpose of the improvement is to reduce ESR, and it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technology.

A second problem to be solved relates to Patent Document 2. Patent Document 2 discloses a detailed manufacturing method related to a solid electrolyte layer in order to provide a method for manufacturing a solid electrolytic capacitor capable of improving capacitance and withstand voltage and reducing the size and capacity. However, the purpose of the improvement is to increase the capacitance and withstand voltage and to increase the size and capacity, and it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technology.

A third problem to be solved relates to Patent Document 3. Patent Document 3 discloses a detailed manufacturing method for a solid electrolyte layer including a separator in order to provide a solid electrolytic capacitor having a large capacity, low ESR, and high reliability. However, the purpose of the improvement is large capacity, low ESR, and high reliability, and it has been impossible to approach the function of an ideal power source expected for a capacitor by the disclosed technology.

A fourth problem to be solved relates to Patent Document 4. Patent Document 4 shows a method of forming a distributed constant noise filter used in a band between 10 KHz and 1 GHz. The length of the distributed constant type noise filter is set so as to be at least a quarter wavelength of a high frequency generated from an electronic component. For example, a harmonic of 100 [MHz], that is, a quarter of a sine wave is used. The wavelength is 75 [cm] in the atmosphere, and in the case of aluminum oxide used as an insulator in this document, the relative dielectric constant is about 8.5, so it is 26 [cm]. Too long to use. Further, the input impedance characteristic of the line has a theoretical error in determining where the transmission coefficient (S21) should be obtained from the measured value of the reflection coefficient (S11) or the equivalent electromagnetic field simulation value. No. Therefore, it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technique. Furthermore, since it has polarity, it was necessary to be careful when using it.

The fifth problem to be solved relates to Patent Document 5. Patent Document 7 shows the structure of an electrode in detail in order to provide a parallel plate line type element suitable for higher speed and higher frequency, but shows a physical constant of a material used and a manufacturing method related to a solid electrolyte layer. It has not been. Therefore, there is no support for the expected transmission coefficient (S21) characteristics. With the disclosed technology, it has been impossible to approximate the function of an ideal power source expected for a capacitor.

Non-Patent Document 1 and Non-Patent Document 2 are important documents that form the theoretical basis of this patent, but have already been described in detail. Non-patent document 3 is one of the theoretical grounds of this patent. Non-Patent Document 3 shows an example of a complex of poly (3,4-ethylenedioxythiophene) and polystyrene / sulfonic acid made into nano-sized particles. In this way, if a nano-sized solid electrolyte material is supplied from a chemical manufacturer, a chemical polymerization reaction step in a component manufacturer or the like that uses the material becomes unnecessary. Due to the efforts of chemical manufacturers such as Non-Patent Document 3, the commercialization of nano-sized solid electrolyte materials having a conductivity of 100 [S / m] or more is approaching.

According to the definition of electromagnetism, most digital signal processing circuits are considered to be quasi-stationary circuits, and AC circuit theory is used in the design. Although the quasi-steady state circuit is dominated by electromagnetic wave theory, it means that there are few practical errors even if the circuit is regarded as stationary and designed and analyzed. When the switching speed of the transistor of the digital signal processing circuit is improved, electromagnetic noise increases, and countermeasures are considered to be very difficult. Although it is well known that when the switching frequency is increased, a reduction in size and weight is achieved. However, an increase in electromagnetic noise is one of the major factors that hinder high frequency operation of digital circuit systems.

It is self-evident that AC circuit theory that deals with stationary circuits cannot take measures against electromagnetic noise, which is electromagnetic waves. Therefore, in order to solve the electromagnetic noise problem that occurs with the speeding up of the transistor, it is necessary to apply the electromagnetic wave theory in the design of the wiring constituting the digital circuit system regardless of the length of the wiring. .

Many capacitors are used in electrical and electronic circuits. Capacitor was German Christ (Ewald George von Kleist) in 1875
Is a fossil that has been used in electrical and electronic equipment without being changed in principle, but the number of uses in equipment continues to increase with recent digitization. . For example, in a PC motherboard, 600 to 1000 or more capacitors are used, and many capacitors are mounted or formed on a semiconductor integrated circuit package or chip, and the number of used capacitors tends to increase.

In general, the function of a capacitor is charge accumulation in accordance with AC circuit theory. In addition, it is considered that the DC power supply supplies electric charges to the AC circuit. In particular, semiconductor manufacturers consider that the supply of electric charges from capacitors is essential for stable operation of semiconductor integrated circuits. Accordingly, in the capacitor, in order to enhance charge storage or discharge performance, the shape of the electrode facing the insulator is generally square or circular, and a pair of circuit connection terminals are provided on the entire surface or the center of the facing electrode. ing.

On the other hand, many capacitors used in electric / electronic circuits are also used for decoupling (decoupling) electromagnetic noise generated by a digital signal processing circuit in a power distribution circuit. For the above reasons, in the digital circuit system, most of the capacitors are mounted on the power distribution circuit and connected in parallel to the circuit.

By the way, the idea that the function of the capacitor is to store electric charge is denied by Maxwell as described above, and in the completed electromagnetics, the function of the capacitor is modified to store electric flux density or electric field. Therefore, the idea that the circuit design engineer who learned the AC circuit theory believes that the supply of electric charge from the capacitor is essential for the stable operation of the semiconductor integrated circuit is completely wrong.

Next, we will attempt to verify the decoupling effect expected for capacitors. The decoupling effect referred to here is an effect of blocking high-frequency electromagnetic noise and transmitting a direct current or a low-frequency region necessary for power supply, and therefore decoupling can be referred to as low-pass filtering. In other words, when a capacitor is connected in parallel to the circuit, the impedance of the capacitor decreases as the frequency increases, and independence between the closed circuits that sandwich the parallel capacitor increases according to Kirchhoff's law. It becomes negligible and the unity between the closed circuits that sandwich the parallel capacitor increases.

According to telecommunications engineering, the impedance of the capacitor when connected in parallel to the line, there is a determined from the following equation by measuring system measures the S ₂₁ with a network analyzer having a characteristic impedance of Z _0.

This is because when the capacitor is connected to the line in parallel, the line length z in equation (11) becomes zero, and the transmission coefficient S ₂₁ and the reflection coefficient S ₁₁ are in a proportional relationship. Note that the measured value of S ₂₁ becomes considerably smaller than 1 as the frequency increases. Z ₀ is usually 50 [Ω]. In this case, equation (17) can be simplified and Z _C = 25S ₂₁ .

By substituting the measured value of S ₂₁ into the equation (17), the frequency characteristic of the impedance of a commercially available capacitor is obtained, resulting in a V-shaped characteristic curve. That is, in a capacitor having a relatively small capacitance such as a ceramic capacitor, the impedance value decreases in proportion to the frequency up to the frequency at which the impedance called the series resonance point is minimized, and the impedance becomes the frequency above the series resonance frequency. The characteristic increases in proportion.

The reason for this characteristic is that a capacitor conventionally has a lead wire, a terminal, and an electrode, and since the current flowing through this part is a conductor current, this part acts as an equivalent series inductance (ESL), and the frequency is This is because the higher the current, the less the current flows. Further, it is considered that the impedance of the series resonance point is determined by an equivalent series resistance (ESR) composed of dielectric loss, lead wire, terminal, and electrode resistance.

However, it can be seen that the above interpretation of the frequency characteristics of the decoupling capacitor is incorrect in light of electromagnetics. That is, although the decoupling capacitor is assumed to be used in an AC circuit defined as an electromagnetic wave circuit, the above interpretation of the frequency characteristics of the decoupling capacitor is mainly based on electromagnetics in an electrostatic magnetic field. Based on theory, Ohm's law has nothing to do with electromagnetism.

If the decoupling capacitor is assumed to be used in an AC circuit that is defined as an electromagnetic wave circuit, the impedance of the circuit or line must be a characteristic impedance that assumes the progression of the electromagnetic wave. However, since the length of the capacitor when viewed from the line is zero, the electromagnetic wave in the capacitor portion is not in the TEM mode. Therefore, the characteristic impedance of the capacitor does not exist theoretically.

From the above, it can be considered that most of the various improvements to improve the impedance characteristics above the frequency at which the impedance, which is called the series resonance point, is the minimum for the capacitor that has been continued for many years, did not hit the target. . That is, the size is reduced as much as possible in order to reduce the ESL. A highly conductive material is used for the lead wire, the terminal, and the electrode. For example, the dielectric loss is made as small as possible. Recently, a material having a relatively low conductivity has been used for a lead wire, a terminal, and an electrode because the Q factor may be increased if the equivalent series resistance (ESR) is too small, which may increase electromagnetic noise. Capacitors with slightly increased losses have also appeared, but from the viewpoint of improving the decoupling function, this is also regarded as a non-targeting method.

In addition, there are errors in the use of capacitors. There is an idea that the impedance of a circuit is lowered by connecting a large number of capacitors in parallel, which is widely believed. This idea is effective when Kirchhoff's law holds, but is invalid above several megahertz where Kirchhoff's law does not hold. There is no other way to lower the circuit impedance than to lower the characteristic impedance of the transmission line in a circuit that should assume the progression of electromagnetic waves that handle signals of several megahertz or more.

Since the capacitor has a line length of zero, even if a large number of capacitors are connected in parallel to the line, the characteristic impedance of the line cannot be lowered. However, since the transmission line's characteristic impedance and transmission coefficient are independent, transmission of electromagnetic waves can be reduced. In the case of capacitors, because the line length is zero, that is, not a line, the impedance and the transmission coefficient were in a proportional relationship, but the impedance required by this concept is decoupling that handles signals of several megahertz or more. It is a meaningless index in the circuit.

Therefore, it is correct to think that the V-shaped impedance characteristic of the capacitor is intended to indicate the upper frequency limit of the decoupling function. That is, it is necessary to limit the parallel use of capacitors to a low frequency region where a concentrated element model can be adopted in anticipation of the function of electric flux density or electric field accumulation, for example, according to Non-Patent Document 2. This means that there are currently no components suitable for decoupling the power distribution circuit. It can be easily estimated that this is one of the biggest reasons for no improvement in the electromagnetic noise problem.

In analog circuits, changes in the circuit state are relatively gradual and the beginning and end are often unclear. Therefore, in the design of a low-frequency analog circuit in particular, even if the AC circuit theory that handles a steady-state circuit is applied instead of the electromagnetic wave theory established by Maxwell, there is almost no problem in practical use.

On the other hand, unlike an analog circuit, a clock circuit and a digital signal processing circuit have a short state change period and the beginning and end of the change are clear. The change in the state of the digital signal processing circuit is very abrupt, and a sudden change in electric or magnetic field excites a large level of electromagnetic waves according to electromagnetics. Changes in electric or magnetic fields in digital signal processing circuits are generally intermittent. Further, in the frequency control type digital signal processing circuit, the switching cycle is indefinite.

As described above, the analog circuit and the digital signal processing circuit are greatly different from the viewpoint of electromagnetics. However, AC circuit theory has been conventionally used in the design and analysis of semiconductor integrated circuits composed of clock circuits and digital signal processing circuits, as in analog circuits. One of the causes is that the switching wave has been regarded as a kind of distorted wave.

According to the Fourier transform method, the distorted wave is assumed to be composed of a number of harmonics that are sine waves. These harmonics are numerous sine waves with no beginning and no end. If so, the clock circuit and digital signal processing circuit can be analyzed by analyzing the signals on the circuit for each harmonic and adding the results. As described above, the Fourier transform method opens a highly convenient path in which a conventional analog circuit method can be applied to design and analysis of a clock circuit and a digital signal processing circuit.

French Joseph in the "Analytical Theory of Heat", called the Fourier transform, submitted in 1812 and awarded the Academy Award
First used by Fourier.
The Fourier transform method is a mathematical method and is versatile, but it has not been adopted in the design and analysis of electrical and electronic circuits after confirming consistency with the higher theory of electromagnetism.

Therefore, the Fourier transform method is applied to the design and analysis of clock circuits and digital signal processing circuits because the conductor current and the voltage between conductors at the speed of light depend only on the D'Alembert wave equation in the aforementioned telecommunications engineering. It should be considered misused from a physics perspective, just as it is going on.

When the switching waveform is treated as a distorted wave, a wrinkle occurs between the observation result and the analysis result when the switching wave travels through a lossy line having a loss. For example, when a switching wave having a duty of 1/10 and a repetition frequency of 1 [GHz] is Fourier transformed, it can be decomposed into a DC component having a value of 1/10 of the amplitude and a harmonic having 1 [GHz] as a fundamental wave. If a certain length of wiring or transmission line in a semiconductor integrated circuit using a CMOS circuit that hardly passes direct current has a loss that reduces the amplitude of 1 [GHz] to 1/2, The amplitude of the switching wave at the end of the transmission line is reduced to almost ½ or less in the analysis result.

However, according to electromagnetics, the steady-state amplitude of the switching wave is maintained by electrostatic energy supplied from a DC power source. Since electrostatic energy is not wave energy, it is not affected by the loss of wiring or transmission lines. Therefore, the amplitude of the switching wave observed at the end of the transmission line should not be attenuated.

This fact indicates that it is an error to treat the switching wave as a distorted wave. This fact also means that the conventional theory of signal quality (signal integrity) in digital signal wiring, which follows the concept of group velocity that arises based on the Fourier transform method, needs to be modified. That is, this fact suggests that a theory replacing the conventional circuit theory is necessary for the future development of the technology of the clock circuit and the digital signal processing circuit.

In order to operate the digital signal processing circuit with high performance without error, sufficient decoupling is required in the power distribution circuit that distributes the DC power to the digital signal processing circuit. If the decoupling in the power distribution circuit is insufficient, not only the digital signal processing circuit but also the power distribution circuit outside the digital circuit system is used in the design and analysis of the digital signal processing circuit. It is also necessary to assume a battery, a commercial power supply network, and so on. This makes design and analysis virtually impossible.

However, if the switching waveform is treated as a distorted wave as in the conventional case, the power distribution circuit connected to many transistors in the digital circuit system is related to the number of distorted waves, and each distorted wave A huge number of harmonics are included. It is impossible to design and analyze the decoupling circuit of the power distribution circuit in such a state even using a high performance computer.

An object of the present invention is to provide means for fundamentally solving the above problems.

In order to solve the above-mentioned problem, the invention according to claim 1 relates to a low impedance loss line, and comprises an anode foil made of a valve metal and having an etched portion formed on both surfaces and a dielectric oxide film formed on the surface of the etched portion. A first cathode foil, a second cathode foil, a conductive polymer layer formed on a dielectric oxide film on both sides of the anode foil, the first cathode foil on the conductive polymer layer, And a parallel plate transmission line structure formed from a conductive polymer paste layer for attaching the second cathode foil and having the first cathode foil and the second cathode foil as electrodes. .

The invention described in claim 2 relates to a low impedance loss line. In the low impedance loss line according to claim 1, the low impedance loss line is in the band of at least 10 [MHz] to 10 [GHz]. Characteristic impedance of 1/100 or less or 0.5 [Ω] or less, and attenuation constant of 10 [nep / m] (neper / meter) or more with respect to the characteristic impedance of all lines on which switching signals travel except the power line It is characterized by having.

The invention described in claim 3 relates to a low impedance loss line. In the low impedance loss line according to claim 1 or 2, the conductive polymer layer has a conductivity of 100 [S / m] or more. And the conductive polymer paste layer has a conductivity of 10 [S / m] or more.

The invention described in claim 4 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 3, the valve action metal is aluminum, tantalum, niobium, titanium, zirconium, or the like. It is characterized by being an alloy.

The invention described in claim 5 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 4, the conductive polymer layer is in an aqueous solution of an oxidizing agent in which a conductive monomer is dissolved. It is characterized by being formed by immersing the anode foil.

The invention described in claim 6 relates to a low-impedance loss line. In the low-impedance loss line according to claims 1 to 5, the conductive polymer layer is a conductive layer made of nano-sized particles. It is characterized by being formed by immersing the functional polymer in a dissolved ethanol or butanol solution.

The invention described in claim 7 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 6, the monomer is 3,4-ethylenedioxythiophene, pyrrole, furan, It is characterized by being a cyclic sulfide or a substituted derivative thereof.

The invention according to claim 8 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 7, ferric paratoluenesulfonate in which the oxidizing agent is dissolved in butanol or ethanol. It is characterized by being ferric paratoluene sulfonate, periodic acid, or iodic acid dissolved in ethylene glycol.

The invention described in claim 9 relates to a low-impedance loss line. In the low-impedance loss line according to claims 1 to 8, the oxidant solution is added with aerosil and is 40 to 180.
It is characterized by having a viscosity of [mpa.s] and a moisture content in the range of 0.5 [wt%] to 5.0 [wt%].

The invention described in claim 10 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 9, the conductive polymer layer is made of poly (p-phenylene) (22.7 °). ), Or poly (p-phenylene sulfide), or polyacetylene, or poly (3,4-ethylenedioxythiophene), or polypyrrole, or polyphenylenevinylene, or tetrathiafulvalene-tetraquinodimethane (TTF-TCNQ), or It is formed of a complex containing one or more of any of the above.

The invention described in claim 11 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 10, the conductive polymer paste layer is made of polythiophene paste or polypyrrole paste having a binder function. It is characterized by being.

The invention described in claim 12 relates to a low impedance loss line, wherein the first conductive polymer paste layer and the second conductive polymer paste in the low impedance loss line according to claims 1 to 11. The layer is poly (p-phenylene) (22.7 °), or poly (p-phenylene sulfide), or carbon graphite, or manganese dioxide, or polyacetylene, or poly (3,4-ethylenedioxythiophene), or Polypyrrole, polyphenylene vinylene, tetrathiafulvalene-tetraquinodimethane (TTF-TCNQ), silicon, germanium, or silicon germanium alloy containing at least 50% by weight, polyethylene, epoxy resin , Fenault Is characterized by being mixed in one of the binder resin are formed.

The invention described in claim 13 relates to a low impedance loss line. In the low impedance loss line according to claims 1 to 12, the dielectric oxide film is formed before, after, or after the step of forming the electrolyte. It is characterized by being formed or repaired by immersing it in a chemical conversion solution for 5 to 120 minutes before and after.

The invention described in claim 14 relates to a low-impedance loss line. In the low-impedance loss line according to claims 1 to 13, the chemical conversion liquid is composed of ammonium dihydrogen phosphate, diammonium hydrogen phosphate, or the like. It is characterized by being a phosphoric acid-based chemical, a boric acid-based chemical such as ammonium borate, or an adipic acid-based chemical such as ammonium adipate.

The invention described in claim 15 relates to a low impedance loss line, wherein the low impedance loss line includes a switching element or a switching circuit block, a signal line, and a power source. Non-ground that is used for all power supply lines of a switching circuit system composed of lines, or for a part of the power supply lines in the vicinity of the switching elements or switching circuit blocks, and in which the first cathode foil constitutes the power supply lines The second cathode foil is inserted in series with respect to a conductor, and is used while being connected in parallel to a ground conductor constituting the gradual decrease line.

When the present invention is applied to a switching circuit, a digital circuit, or a printed wiring board used for them, leakage of electromagnetic waves excited by the switching elements is greatly suppressed, so that the electromagnetic environment of the equipment in which the switching elements are used is adapted. (EMC) can be greatly improved.

When the present invention is applied to a switching circuit, a digital circuit, or a printed wiring board used for the switching circuit, leakage of electromagnetic waves excited by the switching element is greatly suppressed, so that a mixed design of analog circuits and digital circuits becomes easy. .

When the present invention is applied to a switching circuit, a digital circuit, or a printed wiring board used for these, it is used in an information technology apparatus using a high-speed switching element, a digital data communication device, and a DC power distribution circuit of a high-frequency DC-DC converter. It is possible to achieve both reduction in size and weight, cost reduction, high conversion efficiency, high signal quality (signal integrity), and high electromagnetic compatibility (EMC).

DESCRIPTION OF THE PREFERRED EMBODIMENTS The best embodiment according to the present invention will be described below in detail with reference to the drawings.

(Embodiment 1)
FIG. 4 is an example of the structure of a prototype low impedance loss line. FIG. 5 is an example of the S ₂₁ characteristic of the prototype low impedance loss line. FIG. 6 is an example of the structure of a prototype low impedance loss line component. FIG. 7 is an example of the S ₂₁ characteristic of a prototype low impedance loss line component. Both the low impedance loss line and the low impedance loss line component in this embodiment are known.

In FIG. 6, the low impedance loss line component of the present embodiment has two anode terminals 18 and four cathode terminals 19. The low impedance loss line is composed of a silver paste layer 12, an anode foil 13, an insulating layer 14, a solid electrolyte layer 15, and a carbon paste layer 16, and is entirely covered with an airtight sealing resin 17. One anode terminal 18 and two cathode terminals 19 on the right side of FIG. 6 are connected to one end of the anode foil 13 and the silver paste layer 12, respectively, and one anode terminal 18 and two anode terminals 18 on the left side of FIG. A cathode terminal 19 is connected to the other end of the anode foil 13 and the silver paste layer 12 loss line.

In FIG. 4, the low impedance loss line of the present embodiment has a width of 1 [mm] and effective lengths of 4 [mm], 8 [mm], 16 [mm], and 24 [mm]. An aluminum thin film that has been etched is used as the anode foil 13. An aluminum oxide film having a thickness of about 15 nm formed on the etched portion of the aluminum thin film by chemical conversion corresponds to the insulating layer 14. Polypyrrole adhered to the etched portion of the aluminum thin film by chemical polymerization corresponds to the solid electrolyte layer 15 and has a thickness of about 2.5 [μm]. A carbon paste is applied on polypyrrole to a thickness of about 30 [μm], and a silver paste layer 12 is formed thereon by a thermosetting silver paste.

According to the electromagnetic field simulation result, the characteristic impedance of the low impedance loss line of this embodiment is estimated to be 20-30 [mΩ]. This is a value that is three orders of magnitude larger than the case where the TEM wave travels only through the insulator 5 constituting the low impedance loss line. A part of the TEM wave enters the semiconductor 9 from the insulator 5 at a ratio determined by the intrinsic impedance. Electromagnetic waves entering semiconductors are rapidly attenuated.

The conductivity of polypyrrole used as a semiconductor is 3500 [S / m], the thickness of aluminum oxide as an insulator is 15 [nm], the relative dielectric constant is 8.5, and the coating thickness of polypyrrole is 2.5 [μm]. The relative dielectric constant is set to 1, and the relative dielectric constant of aluminum oxide is set to 8.5. The width of the low impedance loss line is 1 [mm], and the thickness of the conductor is 100 [μm]. From the prototype results, the capacitance per 1 mm ² of the low impedance loss line is 0.7 [μF].

The characteristic impedance of the low impedance loss line is 32 [mΩ] from the equation (8) when it is considered that the TEM wave has penetrated to the coating thickness of polypyrrole. This value substantially coincides with the electromagnetic field simulation value obtained from the pointing vector in the transmission line. If this value is the characteristic impedance, the transmission coefficient S _21α of the connecting portion when a low impedance loss line having this characteristic impedance is connected to the 50Ω line is 0.051 or ₋₂₆ dB from the equation (11).

The transmission coefficient S _21Γ to the polypyrrole when the TEM wave is traveling through aluminum oxide and polypyrrole constituting the low impedance loss line is the intrinsic impedance of the polypyrrole obtained from the equation (6) in Z ₁ of the equation (10), obtained by substituting the characteristic impedance of the low impedance loss line to Z _0.

The transmission coefficient S _21α when the TEM wave is traveling through aluminum oxide and polypyrrole constituting the low impedance loss line is a value obtained by multiplying the attenuation coefficient of polypyrrole obtained from the equation (5) by the transmission coefficient to polypyrrole. By substituting into equation (11), it can be obtained for each length z of the low impedance loss line.

The transmission coefficient S _21C of the measurement system of 50 [Ω] based on the capacitance value, which is the low frequency band characteristic of the low impedance loss line, is obtained from the following equation by _modifying the equation (17).

In the equation (18), Z _C can be considered as a value obtained by adding the AC impedance value of the capacitance to the ESR value at a low frequency according to the conductivity of the electrode, here, the conductivity of polypyrrole which is a semiconductor. ESR is obtained from the following equation.

The transmission coefficient _S21A of the approximate low impedance loss line can be obtained from the following equation.

The transmission coefficient _S21A of the low-impedance loss line of the present example obtained from the equation (20) is as follows and is close to the measurement result.

When the line length is 4 [mm]: -37 [dB] at 100 [kHz], -53 [dB] at 1 [MHz], 10
-73 [dB] at [MHz], -91 [dB] at 100 [MHz], and -101 [dB] at 1 [GHz]. When the line length is 8 [mm]: -41 [dB] at 100 [kHz], -59 [dB] at 1 [MHz], 10
-79 [dB] at [MHz], -97 [dB] at 100 [MHz], and -116 [dB] at 1 [GHz]. When the line length is 16 [mm]: -46 [dB] at 100 [kHz], -66 at 1 [MHz]
When [dB], 10 [MHz] is −86 [dB], 100 [MHz] is −119 [dB], 1 [GHz] is −200 [dB], and the line length is 24 [mm]: 100 [kHz] ]
-50 [dB] at 1 [MHz], -69 [dB] at 10 [MHz], -96 [dB] at 10 [MHz], -164 [dB] at 100 [MHz], -287 [dB] at 1 [GHz] .

The low impedance loss line component has terminals for board mounting at both ends of the low impedance loss line. For this reason, an electromagnetic wave bypass is formed between the terminals in the high frequency band, and the transmission coefficient deteriorates. It can be considered that this electromagnetic wave bypass is caused by displacement current or electric flux current flowing through the capacitance. When the bypass capacitance per 1 [m] of the distance between the terminals is obtained from the actual measurement value of the low impedance loss line component of this embodiment, it is 5 × 10 ⁻¹⁷ [F / m].

If the impedance of the capacitance between the terminals is Z _T , the transmission coefficient S _{21T of the} capacitance connected in series can be obtained from the following equation.

The transmission coefficient _S21B of the approximate low impedance loss line component can be obtained from the following equation.

The transmission coefficient S _21B of the low-impedance loss line component of this example obtained from the equation (22) is as follows and is close to the measurement result.

When the line length is 4 [mm]: -37 [dB] at 100 [kHz], -53 [dB] at 1 [MHz], -70 [dB] at 10 [MHz], -62 at 100 [MHz] [dB] -42 at 1 [GHz]
[dB]. When the line length is 8 [mm]: -41 [dB] at 100 [kHz], -59 [dB] at 1 [MHz], -76 [dB] at 10 [MHz], -68 at 100 [MHz] [dB] -48 at 1 [GHz]
[dB]. When the line length is 16 [mm]: -46 [dB] at 100 [kHz], -65 [dB] at 1 [MHz], -83 [dB] at 10 [MHz], -74 at 100 [MHz] [dB] -54 at 1 [GHz]
When [dB] and the line length are 24 [mm]: −50 [dB] at 100 [kHz], −69 [dB] at 1 [MHz], −91 [dB] at 100 [MHz], 100 [MHz] ] -78 [dB], 1 [GHz] -58 [dB]
.

Similar to FIGS. 5 and 7, the above calculation results show that there is almost no difference in transmission characteristics between the low impedance loss line and the low impedance loss line component below 10 [MHz]. In the loss line component, a deterioration phenomenon of transmission characteristics due to bypass between terminals is seen, and the degree of deterioration is almost proportional to the distance between terminals. From the above, it can be determined that the above calculation formula is practical.

(Embodiment 2)
FIG. 8 is an example of a low impedance loss line.

In FIG. 8, the low impedance loss line is composed of an anode foil 24 made of a valve metal, etched portions formed on both surfaces, and a dielectric oxide film formed on the surface of the etched portion, a first cathode foil 21, Two cathode foils 27, a first conductive polymer layer 23 and a second conductive polymer layer 25 formed on the dielectric oxide films on both sides of the anode foil 24, and the first conductive polymer layer 23. A first conductive polymer paste layer 22 for attaching the first cathode foil 21 and a second conductive polymer paste layer for attaching the second cathode foil 27 to the second conductive polymer layer 25 26, and a parallel plate line is formed using the first cathode foil 21 and the second cathode foil 27 as electrodes.

In FIG. 8, the low impedance loss line has a rectifying action. Therefore, when a ground line or a ground plate is connected to the cathode foil 27 and a power supply line having a positive voltage is connected to the cathode foil 21, the line composed of the anode foil 24 and the cathode foil 27 functions, and the anode The line composed of the foil 24 and the cathode foil 21 is in a state close to a short circuit and does not function. On the other hand, when a ground line or a ground plate is connected to the cathode foil 21 and a power supply line having a positive voltage is connected to the cathode foil 27, the line composed of the anode foil 24 and the cathode foil 21 functions, and the anode The line composed of the foil 24 and the cathode foil 27 is in a state close to a short circuit and does not function.

In FIG. 8, the width of the low impedance loss line is 1 [mm], the length is 12 [mm], the conductivity of the conductive polymer and the conductive polymer paste is 1000 [S / m], and the coating thickness of the conductive polymer paste The thickness is 20 [μm]. The anode foil is aluminum, the relative dielectric constant of alumina as the dielectric oxide film is 8.5, the thickness is 30 [nm], and the area expansion rate by etching of the anode foil is reduced by 30% in the case of the first embodiment. 153. The bypass capacitance between the terminals of the low impedance loss line is 10 ⁻¹⁸ [F / m]. The ESR per 1 mm ^{2 at} this time is 1.7 [mΩ] from the equation (19).

According to the first embodiment, the characteristic impedance of the low impedance loss line in the present embodiment is estimated to be 30 [mΩ]. Further, the transmission coefficient S _21B is estimated as follows.

When the line length is 3 [mm]: -34 [dB] at 100 [kHz], -49 [dB] at 1 [MHz], -64 [dB] at 10 [MHz], -70 at 100 [MHz] [dB], -71 [dB] at 230 [MHz], -67 at 1 [GHz]
[dB]. When the line length is 6 [mm]: -38 [dB] at 100 [kHz], -55 [dB] at 1 [MHz], -70 [dB] at 10 [MHz], -76 at 100 [MHz] [dB], -76 [dB] at 230 [MHz], -73 at 1 [GHz]
[dB]. When the line length is 12 [mm]: -43 [dB] at 100 [kHz], -61 [dB] at 1 [MHz], -76 [dB] at 10 [MHz], -82 at 100 [MHz] [dB], -82 [dB] at 230 [MHz], -80 at 1 [GHz]
When [dB] and the line length are 24 [mm]: -48 [dB] at 100 [kHz], -67 [dB] at 1 [MHz], -82 [dB] at 100 [MHz], 100 [MHz] ] -91 [dB], 230 [MHz] -95 [dB], 1 [GHz] -92 [dB]
.

(Embodiment 3)
FIG. 9 is an example of an equivalent circuit of a digital basic circuit using a low impedance loss line.

In FIG. 9, the equivalent circuit of a digital basic circuit using a low impedance loss line includes a DC power supply 31, inverters 35 and 40, a P-channel MOS FET 36 and an N-channel MOS FET 37 constituting the inverter 35, and a power supply on the on-chip interconnect. The line 34 and the power line 33 on the board, the low impedance loss line 32, the signal line 38, and the matching termination resistor 39 are included.

In FIG. 9, the characteristic impedance of the power line 34 and the signal line 38 is 150 [Ω], the characteristic impedance of the power line 33 is 50 [Ω], and the characteristic impedance of the low impedance loss line 32 is the value designed in the third embodiment. Assume 30 [mΩ]. The definition of the on state and the off state of the inverter 35 is the same as described above, and the relationship between the electric field on the transmission line and the potential of the transmission line follows electromagnetics.

The potential waveform of the signal line 38 when the inverter 35 changes from off to on, the isolated electric field waveform traveling on the signal line 6, and the potential waveform of the power supply lines 33 and 34 and the isolated electric field waveform traveling on the power supply lines 33 and 34 Is the same as described above. Therefore, the waveforms of FIGS. 2 and 3 are used to explain the operation of the circuit of FIG.

In FIG. 9, how the isolated electric field wave travels on the transmission line and the potential change of the transmission line when the inverter 35 changes from off to on are as described with reference to FIGS. 2 and 3.

In FIG. 9, the isolated electromagnetic wave traveling on the power line 34 is partially reflected at the connection part with the power line 33, and almost all is excited on the signal line 38 at the connection part with the low impedance loss line 32. It is reflected with the same polarity as the isolated electromagnetic wave, proceeds while raising the potentials of the power supply lines 33 and 34 and the signal line 38 from E / 2 [V] to substantially E [V], and disappears by the matching termination resistor 39.

If the length of the power line 13 is sufficiently short with respect to the wavelength of the isolated electromagnetic wave, the potential at the point D after the inverter 35 is turned on is increased for a delay time when the isolated electromagnetic wave travels on the power line 5. Except for this, the value is almost sufficient for communication.

In FIG. 9, the characteristic impedance of the low-impedance loss line 32 is 30 [mΩ], which is a value that is almost sufficient for communication, but some of the isolated electromagnetic waves traveling through the power lines 33 and 34 are part of the low-impedance loss line. 32.

The electric field intensity E at a distance r [m] when a linear electromagnetic wave having radiated power P is radiated from the antenna can be obtained from the following equation shown in IEC CISPR 16-2-3.

For example, the permissible value of the interference wave electric field strength at a distance of 10 [m] from a class B information technology device intended for home use is determined by VCCI (CISPR22), and is from 30 [MHz] to 230 [MHz]. 30 [dBμV / m] and 230 [MHz] to 1 [GHz] and 37 [dBμV / m]. From the equation (23), for example, an allowable radiated power value at 230 [MHz] is obtained as 2 [nW].

Assuming a semiconductor integrated circuit that uses the low-impedance loss line designed in the third embodiment, has 20 power terminals instead of the inverter 35 of FIG. This means that 5 [W] of power is shared by each power terminal.

Next, in the case where the low impedance loss line having a length of 12 [mm] designed in the second embodiment is used for every two power supply terminals of the conductor integrated circuit, unnecessary electromagnetic waves leaking from the power supply port Estimate the amount of radiated power.

In FIG. 9, the energy of the isolated electric field wave 8 excited by the inverter 35 increases the potential of the signal line 38 from 0 [V] to E / 2 [V], and the isolated electric field wave toward the power line 34 The ratio of energy for lowering the potential from E [V] to E / 2 [V] is 1: 3. Therefore, the power on the power line 34 is 7.5 [W]. Since the power transmittance from the power line 34 to the power line 33 is 0.87, the power transmitted through the power line 33 is 6.5 [W].

When the low impedance loss line having a length of 6 [mm] designed in the second embodiment is used for the low impedance loss line 32, the transmission coefficient at 230 [MHz] is −76 dB. The transmission coefficient at 230 [MHz] of the chip ceramic capacitor shown in FIG. 7 is about 46 dB (about 1/200) smaller. At this time, the power passing through the low impedance loss line 32 is 0.86 [mW].

Out of 4.6 [mW], 0.1% is radiated into the atmosphere, and in the process until it radiates, the isolated electromagnetic wave repeatedly reflects in many places, so that the energy of 0.1% is 230 [MHz] ] To 1 [GHz] is assumed to exist at one frequency, and the electromagnetic energy is 0.86 [nW]. This value sufficiently satisfies the radiated power allowable value 2 [nW] of the class B information technology device.

The present invention provides a semiconductor integrated circuit having a built-in switching circuit, a high-performance information technology device, a multimedia device, and a power converter device incorporating the semiconductor integrated circuit, easy design and shortening a design period, small size and light weight, low It is possible to reduce power consumption, reduce costs, eliminate or reduce electromagnetic interference problems, reduce malfunctions due to electromagnetic noise, and improve quality and reliability.

FIG. 1 is an example of an electromagnetic wave equivalent circuit related to an inverter. FIG. 2 is an example of a potential waveform and an electric field waveform on the power supply side on the line. FIG. 3 shows an example of a potential waveform and an electric field waveform on the resistance side on the line. FIG. 4 is an example of the structure of a prototype low impedance loss line. FIG. 5 is an example of the S ₂₁ characteristic of the prototype low impedance loss line. FIG. 6 is an example of the structure of a prototype low impedance loss line component. FIG. 7 is an example of the S ₂₁ characteristic of a prototype low impedance loss line component. FIG. 8 is an example of a low impedance loss line. FIG. 9 is an example of an equivalent circuit of a digital basic circuit using a low impedance loss line.

Explanation of symbols

1, 35, 40
Inverter 2, 36 P channel MOS FET
3, 37 N-channel MOS FET
4, 31 DC power supply 5, 33, 34 Power supply line 6, 38 Signal line 7, 39 Matching termination resistor 8 Isolated electric field wave 9 on signal line Potential waveform 10 of signal line Isolated electric wave 11 on power supply line 11 Power supply line Potential paste 12 Silver paste layer 13 Anode foil 14 Insulator layer 15 Solid electrolyte layer 16 Carbon paste layer 17 Hermetic sealing resin 18 Anode terminal 19 Cathode terminal 21 First cathode foil 22 First conductive polymer paste layer 23 1 conductive polymer layer 24 anode foil 25 second conductive polymer layer 26 second conductive polymer paste layer 27 second cathode foil 32 low impedance loss line

Claims (15)

An anode foil made of a valve metal and having an etched portion formed on both surfaces and a dielectric oxide film formed on the surface of the etched portion, a first cathode foil, a second cathode foil, and both surfaces of the anode foil Formed from a conductive polymer layer formed on a dielectric oxide film, and a conductive polymer paste layer for attaching the first cathode foil and the second cathode foil to the conductive polymer layer, A low impedance loss line characterized by having a parallel plate transmission line structure using the first cathode foil and the second cathode foil as electrodes. 2. The low impedance loss line according to claim 1, wherein the low impedance loss line has a characteristic impedance of all lines on which switching signals except the power supply line travel in a band of at least 10 [MHz] to 10 [GHz]. A low impedance loss line characterized by having a characteristic impedance of 1/100 or less or 0.5 [Ω] or less and an attenuation constant of 10 [nep / m] (neper / meter) or more The low impedance loss line according to claim 1 or 2, wherein the conductive polymer layer has a conductivity of 100 [S / m] or more, and the conductive polymer paste layer is 10 [S / m]. Low impedance loss line characterized by having the above conductivity 4. The low impedance loss line according to claim 1, wherein the valve action metal is aluminum, tantalum, niobium, titanium, zirconium, or an alloy thereof. 5. The low-impedance loss line according to claim 1, wherein the conductive polymer layer is formed by immersing the anode foil in an aqueous solution of an oxidizing agent in which a conductive monomer is dissolved. Low impedance loss line 6. The low-impedance loss line according to claim 1, wherein the conductive polymer layer is formed by immersing the anode foil in an ethanol or butanol solution in which a conductive polymer made of nano-sized particles is dissolved. Low impedance loss line The low-impedance loss line according to any one of claims 1 to 6, wherein the monomer is 3,4-ethylenedioxythiophene, pyrrole, furan, polycyclic sulfide, or a substituted derivative thereof. Impedance loss line 8. The low impedance loss line according to claim 1, wherein the oxidant is ferric paratoluenesulfonate dissolved in butanol or ethanol, ferric paratoluenesulfonate dissolved in ethylene glycol, periodic acid. Or a low impedance loss line characterized by being iodate 9. The low impedance loss line according to claim 1, wherein the oxidizer solution is 40 to 180 by adding Aerosil.
Low impedance loss line characterized by having a viscosity of [mpa.s] and a moisture content ranging from 0.5 [wt%] to 5.0 [wt%] 10. The low impedance loss line according to claim 1, wherein the conductive polymer layer is poly (p-phenylene) (22.7 °), poly (p-phenylene sulfide), polyacetylene, or poly ( 3,4-ethylenedioxythiophene), polypyrrole, polyphenylene vinylene, tetrathiafulvalene-tetraquinodimethane (TTF-TCNQ), or a complex containing one or more of the above. Low impedance loss line 11. The low impedance loss line according to claim 1, wherein the conductive polymer paste layer is a polythiophene paste or a polypyrrole paste having a binder function. 12. The low impedance loss line according to claim 1, wherein the first conductive polymer paste layer and the second conductive polymer paste layer are poly (p-phenylene) (22.7 °), or Poly (p-phenylene sulfide), or carbon graphite, or manganese dioxide, or polyacetylene, or poly (3,4-ethylenedioxythiophene), or polypyrrole, or polyphenylene vinylene, or tetrathiafulvalene-tetraquinodimethane (TTF). -TCNQ), or one or more of silicon, germanium, or silicon germanium alloy in a weight ratio of 50% or more, and mixed with a binder of polyethylene, epoxy resin, or phenol resin. Features and That, low impedance loss line 13. The low-impedance loss line according to claim 1, wherein the dielectric oxide film is immersed in a chemical forming solution for 5 to 120 minutes before, after, or before and after the electrolyte forming step to form or repair chemical conversion. Low impedance loss line 14. The low impedance loss line according to claim 1, wherein the chemical conversion liquid is a phosphate chemical conversion liquid such as ammonium dihydrogen phosphate or hydrogen diammonium phosphate, or a boric acid chemical conversion such as ammonium borate. Low impedance loss line characterized by being an adipic acid-based chemical conversion liquid such as ammonium adipate 15. The low-impedance loss line according to claim 1, wherein the low-impedance loss line is a power supply line of a switching circuit system including a switching element or a switching circuit block, a signal line, and a power supply line, or the power supply. Used in a part of the line in the vicinity of the switching element or switching circuit block, the first cathode foil is inserted in series with respect to a non-ground conductor constituting the power line, and the second cathode foil is A low-impedance loss line that is used in parallel with a ground conductor that forms a gradually decreasing line.