JP2009277944A - Method of manufacturing junction structure, and method of manufacturing light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a junction structure and a method of manufacturing a light-emitting device by which occurrence of voids in a junction interface of each substrate can be prevented and a junction structure of substrates with a good quality can be obtained. <P>SOLUTION: The junction structure 140 is manufactured by the steps of: forming a thin film on a junction surface of a first substrate 120 by an ambient pressure associated beforehand with a preset warp shape so that the first substrate 120 has the preset warp shape; and joining the first substrate 120 where the thin film is formed and a second substrate 110 by compression by means of adhesive materials 113 and 122. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a joined body in which a first substrate and a second substrate are bonded via an adhesive, and a manufacturing apparatus for a light emitting device.

Conventionally, in the semiconductor field, a technique of bonding and bonding two substrates is used (see, for example, Patent Documents 1, 2, and 3).
JP 2004-266240 A JP 2004-235506 A JP 2005-044849 A

  By the way, when the two substrates are bonded together, there is a problem that voids remain at the bonding interface to form a non-bonded portion, and the bonding strength of each substrate decreases.

  This invention is made | formed in view of the said situation, The place made into the objective suppresses generation | occurrence | production of the void in the joining interface of each board | substrate, and manufacture of the joined body which can obtain the joined body of a favorable board | substrate. A method and an apparatus for manufacturing a light emitting device are provided.

  In order to achieve the above object, in the present invention, a thin film is bonded to the first substrate at an atmospheric pressure pre-associated with the set warpage shape so that the first substrate has a preset warpage shape. Provided is a method for manufacturing a joined body, comprising: a thin film forming step formed on a surface; and a joining step in which the first substrate on which the thin film is formed and the second substrate are joined with an adhesive interposed therebetween. Is done.

  In the manufacturing method of the joined body, the set warpage shape of the first substrate is preferably a shape that is convex with respect to the second substrate.

  In the manufacturing method of the joined body, the thin film is preferably formed by a sputtering method in the thin film forming step.

  In the manufacturing method of the joined body, the thin film is preferably a barrier metal layer that prevents diffusion of the adhesive.

  In the method for manufacturing a bonded body, one of the first substrate and the second substrate is a growth substrate on which a nitride-based semiconductor layer including a light emitting layer is formed, and the other of the first substrate and the second substrate. Is preferably a support substrate.

  In addition, the present invention provides a method for manufacturing a light-emitting device that separates the growth substrate and the nitride-based semiconductor layer after manufacturing a joined body by the above-described manufacturing method.

  In the method for manufacturing the light-emitting device, it is preferable that the growth substrate is a sapphire substrate and the support substrate is a silicon substrate.

  In the method for manufacturing a light emitting device, the adhesive is preferably lead-free solder, and the barrier metal layer preferably includes at least one layer made of W, Ta, Ti, Ni, Hf, or an alloy thereof.

  ADVANTAGE OF THE INVENTION According to this invention, generation | occurrence | production of the void in the joining interface of each board | substrate can be suppressed, and the favorable bonded body of a board | substrate can be obtained.

  FIG. 1 to FIG. 9 show an embodiment of the present invention, FIG. 1 is a diagram for explaining a configuration of a light emitting device, (a) shows a completed state, and (b) shows a nitride-based semiconductor layer. , Shows a sapphire substrate on which a barrier metal layer and an adhesive are formed, (c) shows a silicon substrate on which a barrier metal layer and an adhesive are formed, and (d) shows a state immediately before joining the sapphire substrate and the silicon substrate. (E) shows a joined body immediately after joining a sapphire substrate and a silicon substrate.

  As shown in FIG. 1A, in the light emitting device 100 of this embodiment, a nitride-based semiconductor layer 111 is formed on a silicon substrate 120 as a support substrate. The light emitting device 100 is manufactured by bonding a sapphire substrate 110 and a silicon substrate 120 and then removing the sapphire substrate 110 by a laser lift-off method. In manufacturing the light emitting device 100, as shown in FIG. 1B, a nitride-based semiconductor layer 111, a barrier metal layer 112, and an adhesive 113 are provided in this order from the sapphire substrate 110 side to a sapphire substrate 110 as a growth substrate. Form. The nitride-based semiconductor layer 111 includes, for example, a buffer layer, an n-type GaN-based semiconductor layer, a light-emitting layer, a p-type GaN-based semiconductor layer, and a p-type contact layer from the sapphire substrate 110 side. Barrier metal layer 112 includes, for example, a predetermined number of Ti / W / Ti layers formed on nitride semiconductor layer 111 and a Ni layer formed on the surface of this layer. The adhesive 113 is made of, for example, Au—Sn solder.

  On the other hand, as shown in FIG. 1C, a barrier metal layer 121 and an adhesive material 122 are formed in this order from the silicon substrate 120 side on a silicon substrate 120 as a support substrate. In the present embodiment, the barrier metal layer 121 includes, for example, a Ti layer formed on the silicon substrate 120 and a W layer formed on the Ti layer. Moreover, in this embodiment, the adhesive material 122 consists of Au-Sn solder, for example.

  Then, as shown in FIG. 1D, the sapphire substrate 110 and the silicon substrate 120 are heated and brought into contact with the adhesives 113 and 122 in contact with each other. Thereafter, as shown in FIG. 1E, the adhesives 113 and 122 are melted and solidified to produce a joined body 140 in which the sapphire substrate 110 and the silicon substrate 120 are joined by the adhesive layer 130. Next, after removing the sapphire substrate 110 by a laser lift method, an n-side electrode 150 is formed on the nitride-based semiconductor layer 111, and a p-side electrode 160 is formed on the silicon substrate 120 thinned to about 60 to 250 μm by polishing.

  As shown in FIG. 1D, when the bonded body 140 is manufactured, at least one of the sapphire substrate 110 and the silicon substrate 120 is warped at a predetermined warpage so that no voids are generated between the sapphire substrate 110 and the silicon substrate 120. A shape is preferable. In the present embodiment, the sapphire substrate 110 and the silicon substrate 120 are each formed in a disc shape, and the silicon substrate 120 has a warped shape in which the center side is convex with respect to the sapphire substrate 110. This warpage shape is controlled when the barrier metal layer 121 is formed on the silicon substrate 120. Hereinafter, the sputtering apparatus 1 for forming the barrier metal layer 121 on the silicon substrate 120 will be described.

FIG. 2 is a diagram illustrating the configuration of the sputtering apparatus.
As shown in FIG. 2, a sputtering apparatus 1 serving as a substrate warping apparatus includes a chamber 2 that forms a sputtered film therein, a target electrode 4 that is disposed below the chamber 2 and holds a target 3, and a chamber 2. A substrate electrode 5 that is disposed on the upper side of the substrate and fixes the silicon substrate 12, and a target electrode 4 and a DC power source 6 that applies a voltage to the substrate electrode 5 are provided. The sputtering apparatus 1 includes a gas introduction pipe 7 and a gas exhaust pipe 8 connected to the chamber 2, a gas supply source 7 a that is connected to the upstream side of the gas introduction pipe 7 and supplies a sputtering gas, and a gas introduction pipe 7. A gas introduction valve 7b that controls the flow rate of the sputtering gas, a vacuum pump 8a that is connected to the downstream side of the gas exhaust pipe 8 and exhausts the inside of the chamber 2, and a pressure provided in the gas exhaust pipe 8 controls the pressure in the chamber 2. Pressure control valve 8b. In the present embodiment, for example, Ar is used as the sputtering gas.

FIG. 3 is a control block diagram of the sputtering apparatus.
As shown in FIG. 3, the DC power supply 6, the vacuum pump 8 a, the gas introduction valve 7 b, and the pressure control valve 8 b are connected to the interface unit 10 of the control unit 9 and operate based on commands from the control unit 9. . The control unit 9 includes a storage unit 11 that stores various control programs 11a for controlling the voltage of the DC power supply 6, the operation of the vacuum pump 8a, and the opening degrees of the gas introduction valve 7b and the pressure control valve 8b. The storage unit 11 includes, for example, a ROM and a RAM, and is connected to the interface unit 10 and an arithmetic unit 12 including, for example, a CPU through a bus. Further, the storage unit 11 stores warpage shape data 11b in which the pressure in the chamber 2 when the barrier metal layer 121 is formed and the warpage amount of the silicon substrate 120 after the formation of the barrier metal layer 121 are associated with each other. ing. The interface unit 10 of the control unit 9 is connected to an input unit 13 made up of, for example, a keyboard and a touch panel, and a display unit 14 made up of, eg, a display. The input unit 13 is configured to be able to input the control program 11a and the warp shape data 11b. The display unit 14 is configured to be able to display the voltage of the DC power supply 6, the operation of the vacuum pump 8a, the opening of the gas introduction valve 7b and the pressure control valve 8b, the progress of sputtering, and the like. The control unit 9 collates the warpage amount input from the input unit 13 with the warp shape data 11b, determines the pressure in the chamber 2, and forms the barrier metal layer 121 by the pressure.

  A sputtering method using this sputtering apparatus 1 will be described. The target 3 is fixed to the target electrode 4, and the silicon substrate 120 is fixed to the substrate electrode 5. Next, the vacuum pump 8a is operated to evacuate the chamber 2, and the gas introduction valve 7b is opened to introduce the sputtering gas into the chamber 2 from the gas supply source 7a. The pressure in the chamber 2 is controlled by the opening degree of the pressure control valve 8b. Next, a voltage is applied to the target electrode 4 from the DC power source 6 to generate plasma, and the plasma collides with the surface of the target 3 to sputter the target 3, thereby forming a barrier metal layer 121 as a thin film on the silicon substrate 120. Is done.

  In the present embodiment, the warpage shape of the silicon substrate 120 is controlled by controlling the pressure in the chamber 2. Here, specific examples of the pressure at the time of forming the barrier metal layer 121 and the warpage amount of the silicon substrate 120 are shown in Table 1. Table 1 shows the amount of warpage when a barrier metal layer 121 composed of a Ti layer and a W layer is formed on a 3-inch silicon substrate 120 having a thickness of 0.65 mm. The sputtering gas was Ar, and the thickness of the Ti layer was 1000 mm. The flow rate of Ar gas is 20 sccm, the discharge power is 700 W, the thickness of the W layer is changed to 1000 mm, 2000 mm, and 3000 mm, and the pressure in the chamber 2 is changed to 0.12 Pa, 1.2 Pa, and 1.8 Pa. The amount of warpage of the silicon substrate 120 was measured. The amount of warpage was calculated from the difference between the thickness direction positions of the center and outer edge of the silicon substrate 120 after the barrier metal layer 121 was formed. The amount of warpage was measured using a laser displacement meter LT-8010 manufactured by Keyence Corporation.

FIGS. 4A and 4B show examples of the warped shape of the silicon substrate with the barrier metal layer forming surface on the upper side. FIG. 4A shows a shape in which the center of the substrate protrudes upward, and FIG. 4B shows a shape in which the center of the substrate protrudes downward. Is shown.
The state in which the amount of warpage in Table 1 is positive is a state in which the silicon substrate 120 is convex toward the surface on which the barrier metal layer 121 is formed, as shown in FIG. Further, the state in which the warpage amount in Table 1 is negative is a state in which the silicon substrate 120 is recessed on the surface side on which the barrier metal layer 121 is formed, as shown in FIG.

  As shown in Table 1, when the pressure in the chamber 2 was 0.12 Pa and 1.2 Pa, the amount of warpage was positive. Further, when the pressure in the chamber 2 was 1.8 Pa, the amount of warpage was negative. Specifically, when the thickness of the W layer is 1000 mm, the warpage of the silicon substrate 120 is +98 μm at 0.12 Pa, +53 μm at 1.2 Pa, and −14.58 μm at 1.8 Pa. When the thickness of the W layer was 2000 mm, the warpage amount of the silicon substrate 120 was +213 μm at 0.12 Pa, +78 μm at 1.2 Pa, and −42.74 μm at 1.8 Pa. Furthermore, when the film thickness of the W layer was 3000 mm, the warpage amount of the silicon substrate 120 was +287 μm at 0.12 Pa, +101 μm at 1.2 Pa, and −64.66 μm at 1.8 Pa.

  FIG. 5 is a graph in which the horizontal axis represents the thickness of the W layer and the vertical axis represents the amount of warpage of the silicon substrate. As shown in FIG. 5, the relationship between the thickness of the W layer and the amount of warpage is almost proportional, and the amount of warpage tends to increase as the film thickness of the W layer increases.

  Thus, the amount of warpage of the silicon substrate 120 changes with the atmospheric pressure when the barrier metal layer 121 is formed. In the present embodiment, the barrier metal layer 121 is attached to the silicon substrate 120 at an atmospheric pressure pre-associated with the set warp shape so that the silicon substrate 120 has a set warp shape that does not cause voids or cracks after bonding. Is formed on the joint surface (thin film forming step). Then, after the thin film forming step, the silicon substrate 120 on which the barrier metal layer 121 is formed and the sapphire substrate 110 are bonded to each other through the adhesives 113 and 122 (bonding step). The bonded body bonding apparatus 21 will be described later. The storage unit 11 stores warpage shape data 11b regarding the pressure in the chamber 2 and the warpage amount of the silicon substrate 120, which are measured in advance for a predetermined material and film thickness of the barrier metal layer 121. When the user inputs a desired warpage amount of the silicon substrate 120 from the input unit 13, the control unit 9 derives a pressure corresponding to the warpage amount based on the warp shape data 11b, and the silicon substrate is calculated with the pressure. A barrier metal layer 121 is formed on 120.

FIG. 6 is a configuration explanatory diagram of a bonded body bonding apparatus.
As shown in FIG. 6, the bonded body bonding apparatus 21 includes a chamber 22 that can block outside air, an upper heating plate 23 to which the sapphire substrate 110 is fixed, and a cylinder 24 that moves the upper heating plate 23 up and down. The lower heating plate 25 to which the silicon substrate 120 is fixed, and the support portion 26 that supports the lower heating plate 25 are provided. The upper heating plate 23 and the lower heating plate 25 are disposed in the chamber 22 and configured to be able to apply a load while sandwiching the sapphire substrate 110 and the silicon substrate 120 by the cylinder 24. In the present embodiment, the upper heating plate 23 and the lower heating plate 25 are formed in a disk shape having the same diameter parallel to each other, and each has a heater therein. The bonding apparatus 21 includes a gas introduction pipe 27 and a gas exhaust pipe 28 connected to the chamber 22, a gas supply source 27 a connected to the upstream side of the gas introduction pipe 27 and supplying an inert gas, and a gas introduction pipe 27, a gas introduction valve 27b for controlling the flow rate of the sputtering gas, a vacuum pump 28a connected to the downstream side of the gas exhaust pipe 28 and exhausting the inside of the chamber 22, and a pressure in the chamber 22 provided for the gas exhaust pipe 28. And a pressure control valve 28b for controlling the pressure. In the present embodiment, for example, N ₂ is used as the inert gas.

A bonding method using the bonding apparatus 21 will be described with reference to FIGS. 7 is a schematic explanatory diagram immediately before sandwiching the sapphire substrate and the silicon substrate by the upper heating plate and the lower heating plate, and FIG. 8 is a schematic explanatory diagram of a state in which the sapphire substrate and the silicon substrate are sandwiched by the upper heating plate and the lower heating plate. It is.
As shown in FIG. 7, in manufacturing the bonded body 140, the sapphire substrate 110 and the silicon substrate 120 are positioned with respect to each other. In FIG. 7, the silicon substrate 120 has a convex shape with respect to the sapphire substrate 110. Thereafter, as shown in FIG. 8, the cylinder 24 is extended to move the upper heating plate 23, and the sapphire substrate 110 and the silicon substrate 120 are sandwiched between the adhesives 113 and 122.

  FIG. 9 shows an example of a graph of the relationship between the temperature of the upper heating plate and the lower heating plate and the elapsed time. In this embodiment, as shown in FIG. 9, the upper heating plate 23 and the lower heating plate 25 are heated to a predetermined temperature over a preset heating time, and the upper heating plate 23 and the lower heating plate 25 are The temperature is held at a predetermined temperature for a preset holding time, and the upper heating plate 23 and the lower heating plate 25 are cooled to room temperature over a preset cooling time. The bonding conditions of the bonded body 140 can be arbitrarily set, but in this embodiment, the pressure load of each of the substrates 110 and 120 is 100 to 10000 N, the heating time is 30 minutes, and the predetermined temperature is 100 ° C. to 100 ° C. The temperature is 500 ° C., the holding time is 30 minutes, and the cooling time is 120 minutes.

  As a result, the sapphire substrate 110 and the silicon substrate 120 on which the upper heating plate 10 and the lower heating plate 30 are sandwiched have the upper heating plate 23 and the lower side in a state where the formation surfaces of the adhesives 113 and 122 face each other. It is clamped while being heated by the heating plate 25. At this time, since the silicon substrate 120 has a convex shape with respect to the sapphire substrate 110, the silicon substrate 120 and the sapphire substrate 110 are in contact with each other sequentially from the center side of the substrate, and voids are formed between the substrates 110 and 120. Can be prevented from remaining. In addition, since the silicon substrate 120 is selected as a set warp shape, a shape that most suppresses the occurrence of voids and cracks is selected by experiment, and is formed into a set warp shape by pressure control when the barrier metal layer 121 is formed. It is possible to eliminate almost no residue and cracking of the substrate.

  After manufacturing the bonded body 140, the sapphire substrate 110 is separated by the laser lift-off method, leaving the nitride-based semiconductor layer 111 bonded to the silicon substrate 120 side. At this time, since the warpage of the bonded body 140 is suppressed, the laser beam can be accurately irradiated to the intended separation site. That is, the method and apparatus for manufacturing a bonded body according to the present embodiment solves a problem inherent to a light emitting diode manufactured by forming a semiconductor layer on a growth substrate, bonding a support substrate, and separating the growth substrate. It is what.

Here, an example of a light emitting device using the manufacturing method of the present embodiment will be described.
In the embodiment, a barrier metal layer comprising a Ti layer having a thickness of 1000 mm, a W layer having a thickness of 3000 mm, a Ti layer having a thickness of 1500 mm, and a Ni layer having a thickness of 1500 mm is formed on a 3-inch silicon substrate having a thickness of 0.4 mm. It formed by sputtering method. Each Ti layer and Ni layer were formed at an atmospheric pressure of 0.12 Pa, and the W layer was formed at an atmospheric pressure of 1.2 Pa. The reason why the W layer is set to 1.2 Pa is that the pressure corresponding to the set warp shape was 1.2 Pa. The conditions were changed only by pressure, and when forming each Ti layer, W layer, and Ni layer, the flow rate of Ar gas, which is a sputtering gas, was 20 sccm, and the discharge power was 700 W, which were constant. In forming the barrier metal layer, for the barrier metal layer of the same material and layer structure, the amount of warpage of the silicon substrate is measured by changing the pressure during sputtering, and based on this, the relationship between the pressure and the amount of warpage is determined. Obtained in advance. After forming the barrier metal layer on the silicon substrate in this way, 2 μm of an adhesive made of Au—Sn solder was formed using a resistance heating vacuum deposition machine.

On the other hand, a 3-inch sapphire substrate having a thickness of 0.5 mm includes an n-type layer having a thickness of 4000 nm, a light-emitting layer having a thickness of 40 nm having a multiple quantum well (MQW) structure, and a p-type layer having a thickness of 1400 nm in this order. A nitride-based semiconductor layer was formed by epitaxial growth. Here, the nitride-based semiconductor layer is made of a group III nitride-based compound semiconductor, and the group III nitride-based compound semiconductor has a general formula of Al _x Ga _y In _1-xy N (where x, y, x + y are All of which are represented by 0 or more and 1 or less), wherein an arbitrary impurity is added, or a part of the composition of Al, Ga and / or In is replaced with another group III element, or other V Including elements in which a partial composition of N is replaced with a group element. Thereafter, a reflective electrode made of an alloy containing silver as a main component with a thickness of 300 nm is formed on the nitride-based semiconductor layer, and further a barrier metal layer made of W / Ti / Ni is formed. An adhesive material made of Au—Sn solder was formed.

  Next, the warped silicon substrate and the flat sapphire substrate were bonded at a predetermined temperature of 300 ° C. and a pressure load of 100 N. No cracks occurred in each substrate after bonding, and no voids were confirmed by X-ray inspection, and a good bonded body could be obtained.

  In the embodiment, the silicon substrate 120 is convex toward the sapphire substrate 110. For example, as shown in FIG. 11, the sapphire substrate 110 is convex toward the silicon substrate 120. In this way, the joined body 140 may be manufactured as shown in FIG. In this case, the pressure at the time of forming the barrier metal layer 112 of the sapphire substrate 110 may be changed to control the sapphire substrate 110 to have a desired set warp shape.

  In the embodiment, the sapphire substrate 110 is used as the first substrate. However, a GaN substrate, SiC substrate, or the like may be used as the first substrate. Although the silicon substrate 120 is used as the second substrate, other substrates can be used as long as they have conductivity. Moreover, although the thing using Au-Sn solder was shown as the contact bonding layer 130, you may use other solders, such as In-Sn, Ag-Sn, Sn-Cu, Sn-Bi, for example. The adhesives 113 and 122 are preferably lead-free solder that does not contain lead. In addition, as the barrier metal layers 112 and 121 for preventing metal diffusion of the adhesive layer 130, one having at least one layer made of W, Ta, Ti, Ni, Hf, or an alloy thereof can be used.

  In the above embodiment, the sapphire substrate 110 and the silicon substrate 120 have a diameter of 3 inches. However, the sizes of the first substrate and the second substrate are arbitrary. Note that if the size of the first substrate and the second substrate is 1 inch or more, warping, cracking, and the like of the joined body are likely to occur, so that the effect of suppressing warpage, cracking, etc. becomes significant.

  Moreover, in the said embodiment, although the light emitting diode apparatus was shown as an example of a semiconductor device, if it joins a 1st board | substrate and a 2nd board | substrate, it will warp and crack even in manufacture of another semiconductor device. Of course, other specific details such as the detailed structure can be appropriately changed.

FIGS. 1A and 1B are configuration explanatory views of a light emitting device according to an embodiment of the present invention, in which FIG. 1A shows a completed state, and FIG. 1B shows a nitride semiconductor layer, a barrier metal layer, and an adhesive formed. (C) shows a silicon substrate on which a barrier metal layer and an adhesive are formed, (d) shows a state immediately before joining the sapphire substrate and the silicon substrate, and (e) shows a sapphire substrate. And a bonded body immediately after bonding the silicon substrate. FIG. 2 is a diagram illustrating the configuration of the sputtering apparatus. FIG. 3 is a control block diagram of the sputtering apparatus. FIG. 4 is an example of a warped shape of a silicon substrate with the barrier metal layer forming surface on the upper side. (A) shows a shape in which the center of the substrate protrudes upward, and (b) shows a shape in which the center of the substrate protrudes downward. Show. FIG. 5 is a graph in which the horizontal axis is the thickness of the W layer and the vertical axis is the amount of warpage of the silicon substrate. FIG. 6 is an explanatory diagram of the structure of the bonded body bonding apparatus. FIG. 7 is a schematic explanatory diagram immediately before the sapphire substrate and the silicon substrate are sandwiched between the upper heating plate and the lower heating plate. FIG. 8 is a schematic explanatory view showing a state in which a sapphire substrate and a silicon substrate are sandwiched between an upper heating plate and a lower heating plate. FIG. 9 is an example of a graph of the relationship between the temperature of the upper heating plate and the lower heating plate and the elapsed time. FIG. 10 is a schematic diagram illustrating a modification in which a sapphire substrate and a silicon substrate are sandwiched between an upper heating plate and a lower heating plate. FIG. 11 is a modified example and is an example of a graph of the relationship between the temperature of the upper heating plate and the lower heating plate and the elapsed time.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Sputter apparatus 2 Chamber 3 Target 4 Target electrode 5 Substrate electrode 6 DC power supply 7 Gas introduction pipe 7a Gas supply source 7b Gas introduction valve 8 Gas exhaust pipe 8a Vacuum pump 8b Pressure control valve 9 Control section 10 Interface section 11 Storage section 11a Control Program 11b Warpage shape data 12 Arithmetic unit 13 Input unit 14 Display unit 21 Bonding device 22 Chamber 23 Upper heating plate 24 Cylinder 25 Lower heating plate 26 Support unit 27 Gas introduction pipe 27a Gas supply source 27b Gas introduction valve 28 Gas exhaust pipe 28a Vacuum pump 28b Pressure control valve 100 Light emitting device 110 Sapphire substrate 111 Nitride-based semiconductor layer 112 Barrier metal layer 113 Adhesive 120 Silicon substrate 121 Barrier metal layer 122 Adhesive 130 Adhesive layer 140 Bonding 0.99 n-side electrode 160 p-side electrode

Claims (8)

A thin film forming step of forming a thin film on the bonding surface of the first substrate at an atmospheric pressure previously associated with the set warpage shape so that the first substrate has a preset warpage shape;
A method for manufacturing a joined body, comprising: a joining step in which the first substrate on which the thin film is formed and the second substrate are joined with an adhesive interposed therebetween.   The method of manufacturing a joined body according to claim 1, wherein the set warpage shape of the first substrate is a shape that is convex with respect to the second substrate.   The method for manufacturing a joined body according to claim 2, wherein the thin film is formed by a sputtering method in the thin film forming step.   The method of manufacturing a joined body according to claim 3, wherein the thin film is a barrier metal layer that prevents diffusion of the adhesive. One of the first substrate and the second substrate is a growth substrate on which a nitride-based semiconductor layer including a light emitting layer is formed,
The method for manufacturing a joined body according to claim 4, wherein the other of the first substrate and the second substrate is a support substrate. After manufacturing a joined body by the manufacturing method according to claim 5,
A method of manufacturing a light emitting device for separating the growth substrate and the nitride-based semiconductor layer. The growth substrate is a sapphire substrate;
The method of manufacturing a light emitting device according to claim 6, wherein the support substrate is a silicon substrate. The adhesive is lead-free solder,
The light emitting device manufacturing method according to claim 7, wherein the barrier metal layer has at least one layer made of W, Ta, Ti, Ni, Hf, or an alloy thereof.

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