JP2009272445A - Electronic component device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component device comprising electronic components which are mounted via bumps on a wiring board, the electronic component device enhancing the reliability of connection between the electronic component and the wiring board by preventing the occurrence of stress and strain in each bump by virtue of its simple structure and also allowing the miniaturization and slimming of electronic instruments. <P>SOLUTION: The electronic component device has: an electronic component 60 provided on the main surface with electrode section 52; a wiring circuit board 70 provided on the main surface with electrode 72 oppositely positioned to the electrode section 52; a bump 75 bonding the electrode 52 of the electronic component 60 to the electrode 72 of the wiring circuit board 70; and a stress alleviation layer 65 including a conductive material which is formed between at least one of the electrode section 52 of the electronic component 60 and the electrode 72 of the wiring circuit board 70 and the bump 75 to show plastic deformation responding to stress. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electronic component device. More specifically, for example, a package type semiconductor device such as a BGA (Ball Grid Array) or a CSP (Chip Size Package) or a chip scale package (SGA) is mounted on a wiring circuit board. The present invention relates to an electronic component device such as a semiconductor device.

  With recent miniaturization, high density, and high functionality of electronic devices, there is a demand for miniaturization and thinning of electronic components. Therefore, as a semiconductor device, a surface mount package such as BGA or CSP is proposed as a package that is excellent in high-density mounting with a reduced mounting area by downsizing and can cope with an increase in the number of input / output pins due to higher functionality. Has been.

  For example, in the BGA type semiconductor device shown in FIG. 1, a spherical external connection protruding electrode called a solder bump is formed on the lower surface of a support substrate (package substrate) 10 on which the semiconductor element 1 is mounted and fixed on the upper surface. 5 are arranged in a plurality of grids. The support substrate 10 is mounted on the printed circuit board (motherboard) 25 via the solder bumps 5, and the electrode part 2 of the support substrate 10 is connected to the electrodes 16 of the printed circuit board 15 via the solder bumps 5.

  However, there is a case where a heat history such as a reflow process applied to connect the solder bumps 5 is applied, or there is a case where heat is generated when the semiconductor device is used, and the semiconductor element 1, the support substrate 10, and the wiring circuit board. Stress due to thermal expansion occurs due to a difference in thermal expansion coefficient such as 15. Further, since the semiconductor element 1 has a larger elastic modulus than the support substrate 10, the support substrate 10 that supports the semiconductor chip 1 is likely to be warped due to thermal stress.

  Therefore, when the support substrate 10 on which the semiconductor element 1 is mounted is mounted on the printed circuit board 15 via the solder bumps 5, the stress generated due to the difference in the thermal expansion coefficient is repeatedly concentrated on the entire solder bumps 5. As a result, cracks may occur in the solder bumps 5 and the electrical and mechanical bonding between the semiconductor element 1 and the support substrate 10 or the printed circuit board 15 may be destroyed or damaged.

  Furthermore, as shown in FIG. 2, due to the difference in the thermal expansion coefficient, a dimensional deviation occurs in the solder bump 5, a shear strain occurs in the solder bump 5, and the solder bump 5 is deformed. The closer the formation position of the solder bump 5 is to the outer periphery of the support substrate 10, the more remarkable the shear strain and the dimensional deviation. Therefore, since the region where the solder bump 5 can be formed is limited based on the allowable shear strain amount of the solder bump 5, the above structure is difficult to cope with the increase in the number of terminals of the semiconductor device. Is difficult to apply to a semiconductor device having a large area.

  In order to cope with such a problem, the mode shown in FIG. 3 has been proposed. In FIG. 3, the same portions as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof is omitted. In FIG. 3, a solder bump 25, which is a protruding electrode for external connection that joins the electrode 16 of the printed circuit board 15 and the electrode portion 2 of the support substrate 10, has a drum shape, and the solder bump 25 and the electrode 16 are joined together. The angle is an obtuse angle (see FIG. 3). With this shape, the stress and strain acting on the solder bump 25 can be dispersed, the fatigue strength can be improved, and the solder bump 25 can be made difficult to break. However, the manufacture of the semiconductor device having the drum-shaped solder bumps 25 is more complicated than the manufacture of the semiconductor device having the solder bumps 5 shown in FIG. 1, and the height of the solder bumps is controlled. It is necessary to accurately adjust the volume and height of the solder using an apparatus such as a standoff. As a result, the solder self-alignment effect may be hindered. Further, when the solder bump 25 is broken, a crack is likely to occur from the constricted portion in the drum shape, and a dimensional deviation is likely to occur as shown in FIG.

  By the way, in order to suppress the curvature of a support substrate, the aspect shown in FIG. 5 is proposed. In the support substrate 30 shown in FIG. 5, a core layer 31 is provided at the center. A buildup insulating film 33 having a wiring pattern 32 and a stack via 37 is formed above and below the core layer 31. The buildup insulating film 33 is made of a resin having an elastic modulus lower than that of the core layer 31. A through via 34 is formed in the buildup insulating film 33 so as to penetrate the core layer 31, and the through via 34 connects the wiring pattern 32 provided in the buildup insulating film 33. A solder resist film 35 is formed on the uppermost and lowermost buildup insulating films 33, and electrode pads 36 are formed in the solder resist film 35. The semiconductor element 1 is mounted on the upper surface of the support substrate 30 having such a structure in a so-called face-down state with the circuit formation surface facing downward, and between the semiconductor element 1 and the solder resist film 35 positioned on the upper surface of the support substrate 30. Is filled with an underfill resin 40 such as an epoxy resin. Solder bumps (not shown) for mounting the support substrate 30 on a wiring circuit board (not shown) are formed on the electrode pads 36 located on the lower surface of the support substrate 30. As described above, even in the aspect using the substrate 30 in which the core layer 31 made of the high elastic modulus resin is disposed in the center of the resin multilayer substrate as the support substrate, the wiring density difference in the buildup insulating film 33 and Due to the difference in thermal expansion coefficient between the support substrate 30 and the semiconductor element 1, the support substrate 30 may be warped or distorted, and the connection reliability between the semiconductor element 1 and the support substrate 30 may be lacking. Further, if the thickness of the core layer 31 is increased in order to increase the rigidity of the support substrate 30, it is difficult to reduce the thickness of the support substrate 30, and the semiconductor device cannot be reduced in thickness.

  In order to reduce the thickness of the support substrate 30 with respect to such a structure, a so-called coreless resin substrate having no core layer shown in FIG. 6 has been proposed as the support substrate. In FIG. 6, the same parts as those shown in FIG. A support substrate 50 shown in FIG. 6 is formed by laminating a buildup insulating film 33 on which a wiring pattern 32 and a stack via 37 are formed. The buildup insulating film 33 is made of a resin having an elastic modulus lower than that of the core layer 31 shown in FIG. A solder resist film 35 is formed on the uppermost and lowermost buildup insulating films 33, and electrode pads 36 are formed in the solder resist film 35. The semiconductor element 1 is mounted on the upper surface of the support substrate 50 having such a structure in a so-called face-down state with the circuit formation surface facing downward, and the solder resist film positioned on the upper surfaces of the semiconductor element 1 and the support substrate 50. The space 35 is filled with an underfill resin 40 such as an epoxy resin. On the other hand, solder bumps (not shown) for mounting the support substrate 50 on a printed circuit board (not shown) are formed on the electrode pads 36 located on the lower surface of the support substrate 50.

  The elastic modulus of the support substrate 50, which is a so-called coreless resin substrate having such a structure, is about 10 GPa or more lower than the elastic modulus (about 20 Gpa) of the support substrate 30 including the core layer 31 shown in FIG. May occur. When the support substrate 50 is warped, stress is applied to a joint portion between the support substrate 50 and a wiring circuit board (not shown) on which the support substrate 50 is mounted, and the joint portion may be damaged or destroyed. Therefore, in the support substrate 50, a mode in which a reinforcing member (stiffener) 55 is provided along the outer peripheral portion of the support substrate 50 in order to suppress the occurrence of the warp has been proposed (see FIG. 6). However, it is only the outer peripheral portion of the support substrate 50 that suppresses the warp of the support substrate 50 by the reinforcing member 55, and the rigidity of the central portion of the support substrate 50 cannot be increased. It is difficult to sufficiently suppress warpage or deformation in the region of the part. Further, due to the difference in thermal expansion coefficient between the support substrate 50 and the semiconductor element 1, warping and distortion may occur around the semiconductor element 1, and connection reliability between the semiconductor element 1 and the support substrate 50 may be lacking.

  5 and 6, the solder bump 39 that joins the support substrates 30 and 50 and the semiconductor element 1 has a substantially spherical shape, and the support substrates 30 and 50, the semiconductor element 1, In between, underfill resin 40 which is a member different from the solder bump 39 is filled, and the semiconductor element 1 is mounted on the support substrates 30 and 50.

  In this case, the problem shown in FIG. 7 occurs. In FIG. 7, for convenience of explanation, the connection location between the support substrate 30 and the semiconductor element 1 shown in FIG. 5 is enlarged, but the following problems are the same in the embodiment shown in FIG. In FIG. 7, the right side of the portion indicated by the alternate long and short dash line shows a case where the pitch between adjacent solder bumps 39 is long, and the left side shows a case where the pitch between adjacent solder bumps 39 is short. . Since the underfill resin 40 that is not directly involved in the electrical connection between the support substrates 30 and 50 and the semiconductor element 1 is provided, it is necessary to secure an arrangement space for the underfill resin. Therefore, in FIG. 7, when the pitch between the adjacent solder bumps 39 is increased as shown in the right side of the part indicated by the alternate long and short dash line, the semiconductor element 1 is increased in size, which corresponds to the reduction in the size of the electronic device. Can not. Further, the necessary number of solder bumps 39 should be provided within the same area of the main surface of the semiconductor element 1 as when the underfill resin 40 is not provided between the support substrates 30 and 50 and the semiconductor element 1. Then, in FIG. 7, it is necessary to shorten the pitch between the adjacent solder bumps 39 as shown in the left side of the part indicated by the alternate long and short dash line and the part surrounded by the dotted line. If it does so, the reliability of electrical connection between the adjacent solder bumps 39 cannot be obtained, and it is difficult to secure a sufficient space for filling the underfill resin 40.

  In addition, there has been proposed a semiconductor device in which an Al wiring layer and a plastic material layer are arranged directly on top of each other and a passivation film is provided thereon (see Patent Document 1).

  A semiconductor device having an electrode portion on a semiconductor element, a wiring layer connected to the electrode portion through an insulating layer, and a package electrode formed on the wiring layer, the package being formed from the wiring layer There has been proposed a structure in which a conductor piece made of an alloy that causes martensitic phase transformation is interposed in a part of a wiring conductor path leading to an electrode (see Patent Document 2).

A structure having bumps made of a plastic sprayed metal thick film has been proposed (see Patent Document 3).
JP 63-073649 A Japanese Patent Laid-Open No. 2001-24021 JP-A-9-330932

  The present invention has been made in view of the above points, and is an electronic component device in which an electronic component such as a printed wiring board is mounted on a wiring board via a bump, and a stress is applied to the bump with a simple structure. In addition, the present invention provides an electronic component device that can prevent the occurrence of distortion and improve the connection reliability between the electronic component and the wiring board, and can cope with the reduction in size and thickness of the electronic device. It is an object of the invention.

  According to one aspect of an embodiment of the present invention, an electronic component having an electrode portion on a main surface, a printed circuit board having an electrode positioned on the main surface facing the electrode portion, and the electronic component A bump that joins the electrode part and the electrode of the printed circuit board, and at least one of the electrode part of the electronic component and the electrode of the printed circuit board and the bump, There is provided an electronic component device comprising: a stress relaxation layer including a conductive material exhibiting plastic deformation.

  According to an embodiment of the present invention, an electronic component device in which an electronic component is mounted on a wiring board via a bump, and the occurrence of stress and strain on the bump with a simple structure, It is possible to provide an electronic component device capable of improving the connection reliability between the electronic component and the wiring board and responding to the downsizing and thinning of the electronic device.

  Hereinafter, embodiments of the present invention will be described.

  First, the structure of the electronic component device according to the embodiment of the present invention will be described, and then the method for manufacturing the electronic component device will be described.

1. Structure of Electronic Component Device As an example of the structure of an electronic component device according to an embodiment of the present invention, FIG. 8 shows a support substrate of a ball grid array (BGA) type semiconductor device through solder bumps. The structure mounted on the printed circuit board is shown.

  As shown in FIG. 8, a semiconductor element 51 is mounted on the upper surface, and a support substrate (package substrate) 60 that functions as an electronic component is mounted on a printed circuit board (motherboard) 70 via solder bumps 75. .

  The support substrate 60 is formed by laminating a plurality of wiring substrates each having an insulating resin such as a glass epoxy resin as a base material and a conductive layer made of copper (Cu) or the like selectively disposed on the surface thereof. . A semiconductor element 51 is mounted on the upper surface of the support substrate 60.

  Further, on the main surface of the support substrate 60 opposite to the main surface on which the semiconductor element 51 is mounted, for example, a copper (Cu) layer is formed by a photolithography method or the like, and on the copper (Cu) layer. For example, a nickel (Ni) layer and a gold (Au) layer are laminated by a plating method, whereby the electrode portion 52 is formed.

  A plastic material 65 is provided on the upper surface of the electrode portion 52 as a stress relaxation layer containing a conductive material that exhibits plastic deformation against stress via a conductive adhesive member 53 such as a conductive adhesive or solder paste. It has been.

  The plastic material 65 includes, for example, a β-based titanium (Ti) alloy whose basic composition is expressed as Ti-25 at% (Ta + Nb + V)-(Zr + Hf) + O (including both α-β type alloys and β type alloys). It is a plastic metal material such as a material. As the plastic material 65, for example, rubber metal made by Toyotsu Material, which is a sheet-like titanium (Ti) alloy system, can be used. The β-based titanium (Ti) alloy has a very small longitudinal elastic modulus (Young's modulus) of about 20 to 60 GPa.

  Here, with reference to FIG. 9 and FIG. 10, the characteristics of the β-based titanium (Ti) alloy as the plastic material 65 will be described in detail. In the graphs shown in FIGS. 9 and 10, the vertical axis represents stress, and the horizontal axis represents elongation (strain).

  As shown in FIG. 10, the β-based titanium (Ti) alloy as the plastic material 65 has a superelastic property with an elastic deformability of about 2.5%. Furthermore, when the strain is about 2.5% or more, it exhibits a plastic property having an elongation at break up to 15%.

  As shown in FIG. 9, in the β-based titanium (Ti) alloy as the plastic material 65, the stress-strain diagram does not become a straight line in the elastic deformation region, but becomes an upwardly convex curve (A′-B). When unloading, the elongation returns to 0 (zero) along the curve AA ′, or a slight permanent elongation of about 0.2% occurs along the curve BB ′.

  As described above, in the β-based titanium (Ti) alloy, even in the elastic deformation region (A′-A), the stress and the strain are not in a linear relationship, and the strain increases rapidly as the stress increases. The same applies to the case of unloading, and the stress and strain are not in a linear relationship, and if the stress decreases, the strain rapidly decreases. That is, β-based titanium (Ti) alloy has high elastic deformability and high plastic deformability.

  Further, the β-based titanium (Ti) alloy has an electrical resistivity of about 120 μΩ · cm at room temperature. The formation thickness of the plastic material 65 can be variously set based on the function, size, etc. of the solder bump 75. For example, the lower limit is set to about 1 to 3 μm, and the upper limit is set to about 20 to 50 μm. Also good. When the solder bump 75 has a structural function such as a dummy bump, the upper limit may be set to about 200 to 500 μm.

  A metal layer 67 containing copper (Cu) or gold (Au) is formed on the plastic material 65 having such characteristics by, for example, a plating method or a sputtering method. However, providing the plastic layer 65 with copper (Cu), gold (Au), or an alloy of copper (Cu) and gold (Au) may be omitted.

  The printed circuit board 70 has an insulating resin such as glass epoxy resin as a base material, and a conductive layer made of copper (Cu) or the like is selectively disposed on the surface thereof. On the main surface of the printed circuit board 70, an electrode 72 made of copper (Cu) is formed.

  Similar to the electrode portion 52, a plastic material 65 is provided on the upper surface of the electrode 72 via a conductive adhesive member 53 such as a conductive adhesive or solder paste, and further on the plastic material 65. Is formed with a metal layer 67 containing copper (Cu) or gold (Au).

  A solder bump 75, which is a substantially spherical protruding electrode for external connection bonded to the electrode portion 52 of the support substrate 60, is bonded to the electrode 72 of the printed circuit board 70. The solder bump 75 is made of solder mainly composed of tin (Sn).

  As described above, in the electronic component device according to the embodiment of the present invention, the plastic material using the plastic region is used as the solder bump 75 without resin sealing between the support substrate 60 and the printed circuit board 70. The electrode part 52 of the support substrate 60 having 65 and the electrode 72 of the printed circuit board 70 are sandwiched. That is, a plastic material 65 is provided between the solder bump 75 that receives the most shear strain and the electrode portion 52 or the electrode 72, and the solder bump 75 is interposed between the electrode portion 52 and the electrode 72 via the plastic material 65. Are physically and electrically connected.

  Therefore, as shown in FIG. 11, due to the difference in thermal expansion coefficients of the semiconductor element 51, the support substrate 60, the printed circuit board 70, or the like, or the uneven formation height of the solder bumps 75, the semiconductor element 51, Even if the support substrate 60 and the printed circuit board 70 are warped or deformed, the plastic material 65 is deformed following the warpage or deformation, and absorbs and relaxes mechanical stress and thermal stress generated in the solder bump 75. Even if stress concentration occurs between the solder bump 75 and the electrode portion 52 or the electrode 72, the plastic material 65 is provided at the location, so that the plastic material 65 relieves the stress. To do.

  Even if the semiconductor element 51, the support substrate 60, and the printed circuit board 70 are warped or deformed, only the plastic material 65 is deformed, and the solder bump 75 itself is not deformed.

  Further, the plastic material 65 has a Young's modulus (about 20 to 60 GPa) substantially equal to that of the solder bump 75, and the two are matched. Therefore, the plastic material 65 and the solder bump 75 are integrated, and generation of internal stress between them can be prevented.

  Therefore, the stress or strain generated due to the difference in thermal expansion coefficients of the semiconductor element 51, the support substrate 60, the printed circuit board 70, or the like or the nonuniformity in the formation height of the solder bumps 75 is caused by the plastic material 65. Since it absorbs by deformation within the elastic range to the plastic range, the stress or strain can be relaxed (dispersed) with a simple structure.

  Therefore, cracks can be prevented from occurring in the solder bump 75, and the reliability and fatigue strength of the bonding between the electrode portion 52 and the electrode 72 through the solder bump 75 can be improved. Therefore, the connection reliability between the support substrate 60 and the printed circuit board 70 can be improved, and a stable electrical connection against repeated strain can be maintained in a manner corresponding to downsizing and thinning of the electronic device. In addition, the life of the electronic component device can be improved.

  In the example shown in FIG. 10, the plastic material 65 is provided on both the electrode portion 52 of the support substrate 60 and the electrode 72 of the printed circuit board 70, but the present invention is not limited to such an example. The plastic material 65 may be provided on either the electrode portion 52 of the support substrate 60 or the electrode 72 of the printed circuit board 70.

  Further, in the example shown in FIG. 10, the solder bump 75 provided between the electrode 72 of the printed circuit board 70 and the electrode portion 52 of the support substrate 60 has a spherical shape, but the present invention is applied. It is not limited to examples. The present invention can be applied even when the solder bump 75 has a drum shape like the solder bump 25 shown in FIG.

By the way, in the example shown in FIG. 8, the upper surface of the plastic material 65 seen from the direction shown by the arrow X is shown in FIG. As shown in FIG. 12, in the example shown in FIG.
A conductive adhesive member 53 is provided on the entire upper surface of the electrode 72. However, the present invention is not limited to such an example. As long as the electrical connection between the electrode portion 52 of the support substrate 60 and the electrode 72 of the printed circuit board 70 can be obtained by the solder bump 75, other modes may be used, and the modes shown in FIGS. The present invention can be applied. In FIG. 13, the same parts as those shown in FIG. 10 are denoted by the same reference numerals, and the description thereof is omitted. Moreover, the upper surface of the plastic material 65a seen from the direction shown by the arrow X in FIG. 13 is shown in FIG.

  In the example shown in FIGS. 13 and 14, the plastic material 65 a is provided in a ring shape along the outer periphery of the upper surface of the electrode 72 via the conductive adhesive member 53.

  In the example shown in FIG. 15, the plastic material 65 b is provided via the conductive adhesive member 53, having a notch portion (gap portion) along the outer periphery of the upper surface of the electrode 72.

  Further, in the example shown in FIG. 16, a plurality of concentric plastic materials 65 c are provided on the upper surface of the electrode 72 via the conductive adhesive member 53.

  Thus, in the example shown in FIGS. 13 to 16, the plastic material 65a, 65b to 65c is provided not on the entire upper surface of the electrode 72 but partially on the upper surface of the electrode 72. The conductivity can be improved as compared with the example shown in FIG. Further, since plastic material 65a, 65b to 65c is provided on at least a part of the outer peripheral portion of the upper surface of the electrode 72, the plastic material 65a, 65b to 65c Stress can be relaxed.

2. Next, a method for manufacturing an electronic component device having the above-described structure will be described with reference to FIGS.

  In the example shown in FIG. 8, a plastic material 65 is provided on the upper surface of the electrode part 52 (electrode 72) of the support substrate 60 (wiring circuit board 70) via the conductive adhesive member 53, and the plastic material A single metal layer 67 is formed on 65. In the example shown in FIGS. 17 to 20, the same as the metal layer 67 (see FIG. 8) is provided on the upper surface of the electrode portion 52 (electrode 72) of the support substrate 60 (wiring circuit board 70) via the conductive adhesive member 53. A first metal layer 67-1 made of the above material is provided, a plastic material 65 is provided on the first metal layer 67-1, and the metal layer 67 (FIG. 8) is provided on the plastic material 65. A structure in which a second metal layer 67-2 made of the same material as that of (see) is provided is formed. The structure of the example shown in FIG. 8 is formed by a process in which the process of forming the first metal layer 67-1 is omitted during the process of the example shown in FIGS.

  First, as shown in FIG. 17A, for example, a first metal layer 67-1 containing copper (Cu) or gold (Au) on the upper surface and the back surface of a plastic material 65 having a sheet-like shape, and The second metal layer 67-2 is formed by, for example, a plating method or a sputtering method.

  The plastic material 65 functions as a stress relaxation layer including a conductive material that exhibits plastic deformation with respect to stress. For example, a β-based titanium (basic composition expressed as Ti-25 at% (Ta + Nb + V)-(Zr + Hf) + O) Ti) is a plastic metal material such as a material including an alloy (including both α-β type alloys and β type alloys). As the plastic material 65, for example, rubber metal made by Toyotsu Material, which is a sheet-like titanium (Ti) alloy system, can be used.

  Next, as shown in FIG. 17B, the support of the plastic material 65 in which the first metal layer 67-1 and the second metal layer 67-2 are formed on the upper surface and the rear surface by punching. A hole having a size corresponding to the diameter of the electrode portion 52 of the support substrate 60 connected by a process described later or the diameter of the solder bump 55 connected by a process described later is formed at a position corresponding to the electrode section 52 of the substrate 60. To do.

  Specifically, the first metal layer 67-1 and the second metal layer 67-2 were formed on the upper surface and the back surface of the punched female die 101 provided on the base film 100 as the adhesive sheet. Corresponding to the diameter of the electrode part 52 of the support substrate 60 or the diameter of the solder bump 55 at the position corresponding to the electrode part 52 of the support substrate 60 of the plastic material 65 by providing the plastic material 65 and punching male mold 102. A hole of a size to be formed is formed.

  When the punching female die 101, the punching male die 102, and the plastic material 65 after the punching are removed after the punching is finished, the base film 100 is placed on the upper surface and the back surface as shown in FIG. The plastic material 65 on which the first metal layer 67-1 and the second metal layer 67-2 are formed is transferred.

  Thereafter, as shown in FIG. 18 (d), a conductive property is formed on the first metal layer 67-1 provided on the upper surface of the plastic material 65 transferred to the base film 100 using the metal mask 110. A conductive adhesive member 53 such as an adhesive or solder paste is applied and formed.

  Next, as shown in FIG. 19 (e), one of the two base films 100 on which the conductive adhesive member 53 is mounted is the main surface of the support substrate 60, and a semiconductor element not shown. The other electrode is formed on the main surface opposite to the main surface on which 51 is mounted, and the other is transferred to the electrode 72 formed on the main surface of the printed circuit board 70 in alignment. To do.

  The support substrate 60 is formed by laminating a plurality of wiring substrates, each of which has an insulating resin such as a glass epoxy resin as a base material and a conductive layer made of copper (Cu) or the like selectively disposed on the surface. ing. For example, a copper (Cu) layer is formed by a photolithography method or the like in the electrode part 52, and a nickel (Ni) layer and a gold (Au) layer are laminated on the copper (Cu) layer by a plating method, for example. Is formed. Further, the printed circuit board 70 has an insulating resin such as glass epoxy resin as a base material, and a conductive layer made of copper (Cu) or the like is selectively disposed on the surface thereof. The electrode 71 formed on the main surface of the printed circuit board 70 is made of, for example, copper (Cu).

  Of the two base films 100 on which the conductive adhesive member 53 is mounted, one is on the electrode portion 52 formed on the main surface of the support substrate 60 and the other is on the main surface of the printed circuit board 70. After transferring to the electrode 72 formed thereon, the base film 100 is peeled off. As a result, as shown in FIG. 19F, the plastic material 65 sandwiched between the first metal layer 67-1 and the second metal layer 67-2 in the support substrate 10 becomes the conductive adhesive member 53. A structure formed on the electrode portion 52 is formed via the. Similarly, although not shown, in the printed circuit board 70, the plastic material 65 sandwiched between the first metal layer 67-1 and the second metal layer 67-2 is interposed via the conductive adhesive member 53. A structure formed on the electrode 72 is formed.

  Next, as shown in FIG. 20G, the plastic material 65 sandwiched between the first metal layer 67-1 and the second metal layer 67-2 was provided via the conductive adhesive member 53. A solder bump 75 which is a substantially spherical protruding electrode for external connection made of solder mainly composed of tin (Sn) is joined to the electrode portion 52 of the support substrate 60. In forming the solder bump 75 on the electrode portion 52, a preliminary solder paste may be formed on the electrode portion 52 in advance.

  Next, reflow heat treatment is performed to mount and fix the support substrate 60 with the solder bumps 75 formed on the electrode portions 52 on the printed circuit board 70 as shown in FIG. That is, a plastic material 65 is provided between the solder bump 75 and the electrode part 52 or the electrode 72 that are most susceptible to shear strain, and the electrode part 52 and the electrode 72 are connected by the solder bump 75 via the plastic material 65. A structure is formed in which the spaces are physically and electrically connected.

  In this manner, the solder bumps 75 can be connected to the electrode portions 52 of the support substrate 60 including the plastic material 65 using the plastic region and the wiring without resin sealing between the support substrate 60 and the printed circuit board 70. An electronic component device sandwiched between the electrodes 72 of the circuit board 70 can be easily manufactured.

  In the example shown in FIGS. 17 to 20, the plastic material 65 is provided on both the electrode portion 52 of the support substrate 60 and the electrode 72 of the printed circuit board 70, but the present invention is not limited to this example. . The plastic material 65 may be provided on either the electrode portion 52 of the support substrate 60 or the electrode 72 of the printed circuit board 70.

  Further, by changing the shape of the punched male die 102 used in the step shown in FIG. 17B, the plastic material 65 can have the planar shape shown in FIGS.

  Although the embodiment of the present invention has been described in detail above, the present invention is not limited to the specific embodiment, and various modifications and changes are within the scope of the gist of the present invention described in the claims. It can be changed.

  That is, the present invention is applied not only to a multilayer wiring board having a core portion manufactured by a buildup method and a coreless multilayer wiring board manufactured by a buildup method, but also to an electronic component device having various printed wiring boards. can do.

  For example, a single-sided (single-layer) wiring board in which a wiring layer is formed only on one side of the board, a double-sided (two-layer) wiring board in which a wiring layer is formed on both sides of the board, and a through multilayer wiring board that connects each wiring layer with through vias The present invention can be applied to an electronic component device having various printed wiring boards such as an IVH multilayer wiring board that connects specific wiring layers by IVH (Interstitial Via Hole).

Regarding the above description, the following items are further disclosed.
(Appendix 1)
An electronic component having an electrode portion on the main surface;
A printed circuit board provided on the main surface with an electrode positioned opposite to the electrode portion;
A bump for joining the electrode part of the electronic component and the electrode of the wired circuit board;
A stress relaxation layer including a conductive material formed between at least one of the electrode portion of the electronic component and the electrode of the wired circuit board and the bump, and including a conductive material that exhibits plastic deformation against stress. Electronic component device characterized.
(Appendix 2)
An electronic component device according to appendix 1,
The electronic component device, wherein the conductive material includes a plastic material.
(Appendix 3)
An electronic component device according to appendix 1 or 2,
The electronic component device, wherein the conductive material is a material containing a β-based titanium (Ti) alloy.
(Appendix 4)
The electronic component device according to any one of appendices 1 to 3,
The electronic component device according to claim 1, wherein the conductive material has a plastic elongation at break of about 2.5% to 15%.
(Appendix 5)
The electronic component device according to any one of appendices 1 to 4,
An electronic component device, wherein a metal layer containing at least copper (Cu) or gold (Au) is formed between the stress relaxation layer and the bump.
(Appendix 6)
The electronic component device according to any one of appendices 1 to 5,
An electronic component device, wherein a conductive adhesive member is formed between the stress relaxation layer and the electrode portion of the electronic component or the electrode of the wired circuit board.
(Appendix 7)
The electronic component device according to any one of appendices 1 to 6,
The electronic component device, wherein the stress relaxation layer is formed above at least a part of the outer peripheral portion of the electrode portion of the electronic component or the upper surface of the electrode of the wired circuit board.

It is a figure which shows the structure where the support substrate of the BGA type semiconductor device was mounted on the printed circuit board via the solder bump. It is a figure for demonstrating the problem of the structure shown in FIG. It is a figure for demonstrating the aspect in case the shape of a solder bump is a drum shape. It is a figure for demonstrating the problem of the structure shown in FIG. It is a figure which shows the structure of the support substrate which has a core layer. It is a figure which shows the structure of the support substrate which does not have a core layer. It is a figure for demonstrating the problem in the structure shown in FIG. 5 (FIG. 6). It is a figure which shows the structure of the electronic component apparatus which concerns on embodiment of this invention. It is a graph (the 1) which shows the characteristic of the plastic material shown in FIG. It is a graph (the 2) which shows the characteristic of the plastic material shown in FIG. It is a figure which shows the case where curvature generate | occur | produced in the electronic component apparatus shown in FIG. In FIG. 8, it is the figure which looked at the plastic body material from the direction shown by arrow X. It is a figure for demonstrating the modification (the 1) of the plastic material shown in FIG. In FIG. 13, it is the figure which looked at the plastic body material from the direction shown by arrow X. It is a figure for demonstrating the modification (the 2) of the plastic material shown in FIG. It is a figure for demonstrating the modification (the 3) of the plastic material shown in FIG. It is FIG. (1) for demonstrating the manufacturing method of the electronic component apparatus which concerns on embodiment of this invention. It is FIG. (2) for demonstrating the manufacturing method of the electronic component apparatus which concerns on embodiment of this invention. It is FIG. (3) for demonstrating the manufacturing method of the electronic component apparatus which concerns on embodiment of this invention. It is FIG. (4) for demonstrating the manufacturing method of the electronic component apparatus which concerns on embodiment of this invention.

Explanation of symbols

51 Semiconductor Element 52 Electrode Portion 53 Conductive Adhesive Member 60 Support Substrate 65, 65a, 65b, 65c Plastic Material 67, 67-1, 67-2 Metal Layer 70 Wiring Circuit Board 72 Electrode 75 Solder Bump

Claims (5)

An electronic component having an electrode portion on the main surface;
A printed circuit board provided on the main surface with an electrode positioned opposite to the electrode portion;
A bump for joining the electrode part of the electronic component and the electrode of the wired circuit board;
A stress relaxation layer including a conductive material formed between at least one of the electrode portion of the electronic component and the electrode of the wired circuit board and the bump, and including a conductive material that exhibits plastic deformation against stress. Electronic component device characterized. The electronic component device according to claim 1,
The electronic component device, wherein the conductive material includes a plastic material. The electronic component device according to claim 1 or 2,
The electronic component device, wherein the conductive material is a material containing a β-based titanium (Ti) alloy. An electronic component device according to any one of claims 1 to 3,
An electronic component device, wherein a metal layer containing at least copper (Cu) or gold (Au) is formed between the stress relaxation layer and the bump. An electronic component device according to any one of claims 1 to 4,
The electronic component device, wherein the stress relaxation layer is formed above at least a part of the outer peripheral portion of the electrode portion of the electronic component or the upper surface of the electrode of the wired circuit board.

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