JP2009231968A - Unit resonator, adjusting method of unit resonator, resonator, oscillation circuit, oscillator, and transmission and reception circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a unit resonator whose frequency is adjusted after processing, an adjusting method of the unit resonator, a resonator, an oscillator, and a transmission and reception circuit. <P>SOLUTION: The unit resonator includes a substrate, a vibration portion 3 which resonates at a natural resonance frequency, support portions 4a and 4b which support positions of the vibration portion 3 as node regions during resonance from one side and the other side of the vibration portion 3, a fixing portion 5 fixing the support portions 4a and 4b to the substrate, and a pressure control mechanism which controls pressure applied to connection portions between the vibration portion 3 and support portions 4a and 4b. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a unit resonator using mechanical resonance, a method for adjusting a unit resonator, a resonator using the unit resonator, an oscillation circuit, an oscillator, and a transmission / reception circuit including the oscillation circuit.

  2. Description of the Related Art In recent years, in order to reduce the size and thickness of electronic devices, technological development for reducing the size and weight of electronic elements inside electronic devices has been continued. For example, making a circuit inside an electronic device into an IC chip is used as a general and effective technique. As seen in the internal circuits of thin TVs and mobile phones, it has been realized to reduce the circuit scale by using many ICs.

  However, some electronic devices have circuits that have not been realized as ICs, and these have become a foothold for downsizing electronic devices. For example, RF parts that use electro-mechanical energy conversion, such as IF band filters and high-precision oscillators, cannot function as ICs that are formed on a Si substrate due to physical size and material selection range. Absent. Although progress has been made in miniaturization due to the development of processing technology and mounting technology so far, it does not meet the needs of the market, but occupies a large place on the board as an external component of highly integrated LSI and IC ing.

  On the other hand, MEMS (Micro Electro Mechanical System) technology has attracted attention as a breakthrough technology that can reduce the size of components at once. The features of the MEMS oscillator and the MEMS filter using the MEMS technology are that they can be mass-produced on a production line based on an existing semiconductor process, and that a MEMS product can have the same form as a normal Si chip. Therefore, MEMS products can be overwhelmingly smaller and thinner than current filters and oscillators, and are expected to contribute to miniaturization of electronic devices.

The following non-patent document 1 describes a conventional technology of a MEMS resonator that is a basic component of a MEMS filter or an oscillator.
FIG. 30 shows a schematic planar configuration of the resonator described in Non-Patent Document 1. The resonator shown in FIG. 30A includes a vibrating portion (so-called beam) 103 that resonates, a supporting portion 104 that supports the vibrating portion 103 and determines the position of a node at the time of resonance, and a fixing that fixes the supporting portion 104 to a substrate (not shown). Part 105, and an input electrode 108 and an output electrode 109 serving as a place for transferring energy between the electric signal and the resonance of the vibration part 103. A required DC bias voltage Vp is applied to the vibration unit 103. The vibrating part 103 is sensitive only to the resonance frequency in the input signal Vi applied to the input electrode 108 on the input side (the lower side of the paper), and is caused by the electrostatic force between the vibrating part 103 and the input electrode 108 as shown in FIG. 30B. Resonates. At the same time, only the resonance frequency signal passes through the output electrode 109 on the output side (on the paper surface), so that the resonator resonates while converting energy in the order of electrical signal to mechanical resonance and mechanical resonance to electrical signal. It is an electrical element that transmits only the frequency. Here, the resonance frequency is determined from the length, width, and thickness of the vibrating portion 103, the interval between the support portions 104, and the physical properties of Si that is the material of the vibrating portion 103. In such a resonator, electrically, a series resonance circuit in which a resistor Rx, a capacitor Cx, and a coil Lx are connected in series as shown in FIG. 30C is an equivalent circuit.

T.C.Nguyen at el. “Higher-Mode Free-Free Beam Micromechanical Resonator,” IEEE International Frequency Control Symposium, pp. 810-818,2003

  The resonator shown in Non-Patent Document 1 as described above is a technology that can provide the same or better characteristics as the current product, in addition to being able to downsize the MEMS filter and the oscillator by orders of magnitude. However, no technology has been established for achieving both small size and high frequency accuracy.

  For example, in a crystal oscillator that provides an oscillation frequency in the ppm level range, after forming an electrode on the crystal resonator, the frequency is adjusted by thinly scraping the electrode film on the surface of the resonator while actually measuring the resonance frequency. Achieve high frequency accuracy. Although the same process is desired to be used for the MEMS resonator, a technique for processing a MEMS resonator element having an outer shape of several μm has not been established even though a crystal having an outer shape of mm is possible.

  In view of the above, the present invention provides a unit resonator, a unit resonator adjustment method, a resonator, an oscillation circuit, an oscillator, and a transmission / reception circuit that can adjust the frequency after processing.

  In order to solve the above problems and achieve the object of the present invention, a unit resonator according to the present invention includes a substrate, a vibrating portion that resonates at a specific resonance frequency, and a position that becomes a nodal region at the time of resonance in the vibrating portion. A support unit supported from one side and the other side of the unit, a fixing unit that fixes the support unit to the substrate, and a pressure control mechanism that controls a pressure applied to a connection unit between the vibration unit and the support unit. It is characterized by that.

  In the unit resonator of the present invention, the vibration part is supported by the support part from one side and / or the other side of the vibration part, so that the pressure from the support part is applied to the vibration part in a direction intersecting the vibration direction. Applied. The pressure applied to the connecting portion from the direction intersecting the vibration direction is controlled by the pressure control mechanism. Thereby, the resonance frequency is adjusted.

  The unit resonator adjusting method according to the present invention includes a substrate, a vibrating part that resonates at a specific resonance frequency, a supporting part that supports the vibrating part, and a supporting part from one side and / or the other side of the vibrating part. By adjusting the pressure applied to the connecting part between the support part and the vibration part of the unit resonator composed of the fixed part that fixes the part to the substrate, the effective mass of the vibration part is changed and the resonance frequency is adjusted It is characterized by doing.

  In the method for adjusting a unit resonator according to the present invention, by controlling the pressure applied to the connection portion between the support portion and the vibration portion, the volume of the vibration portion contributing to vibration changes in the vibration portion, and the effective vibration portion The mass changes. Thereby, the resonance frequency is adjusted.

  The resonator of the present invention includes a substrate, a vibrating portion that resonates at a specific resonance frequency, a supporting portion that supports the vibrating portion from one side and / or the other side of the vibrating portion, and a supporting portion that is attached to the substrate. It is characterized by comprising a plurality of unit resonators having a fixing part for fixing and a pressure control mechanism for controlling the pressure applied to the connecting part between the vibration part and the support part.

  In the resonator according to the aspect of the invention, in the unit resonator constituting the resonator, the vibration unit is supported by the support unit from the direction intersecting the vibration direction. Then, the pressure applied to the connecting portion is controlled by the pressure control mechanism from the direction crossing the vibration direction of the vibrating portion. Thereby, the resonance frequency of the resonator is adjusted.

  The oscillation circuit of the present invention includes a substrate, a vibrating portion that resonates at a specific resonance frequency, a supporting portion that supports the vibrating portion from one side and / or the other side of the vibrating portion, and a supporting portion that supports the substrate. And a resonator composed of a unit resonator that adjusts the resonance frequency by controlling the pressure applied to the connecting portion between the vibrating portion and the support portion. Features.

  In the oscillation circuit of the present invention, the resonance frequency is accurately adjusted in the resonator incorporated in the oscillation circuit.

  Further, in the transmission / reception circuit of the present invention, in the transmission / reception circuit having an oscillation circuit for frequency conversion, the oscillation circuit includes a vibration unit that resonates with a substrate at a specific resonance frequency, and a vibration unit on one side of the vibration unit and A unit that adjusts the resonance frequency by controlling the pressure applied to the connecting part between the vibration part and the support part, comprising a support part supported from the other side and a fixing part that fixes the support part to the substrate. It is comprised from the resonator comprised from a resonator, It is characterized by the above-mentioned.

  In the transmission / reception circuit according to the present invention, the resonator incorporated in the oscillation circuit of the transmission / reception circuit has a configuration in which the resonance frequency is adjusted by the pressure control mechanism. The resonant frequency of the vessel is adjusted. As a result, a transmission / reception circuit with improved frequency accuracy can be obtained.

  According to the present invention, the resonance frequency of the unit resonator and the resonator can be adjusted with high accuracy, and further, the resonance frequency can be adjusted after being incorporated in the oscillator, the transmission circuit, and the transmission / reception circuit.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

  First, the principle of the present invention will be described with reference to FIGS. FIG. 1A shows a schematic configuration diagram of a resonator to which an embodiment described later is applied, and FIG. 1B shows a unit resonator constituting the resonator of FIG. 1A. FIG. 2 shows a cross-sectional configuration along the line AA in FIG. 1B. Resonators targeted in embodiments described later are microscale and nanoscale microresonators. A resonator 1 shown in FIG. 1 is a resonator formed by MEMS technology.

  First, as shown in FIG. 2, the unit resonator 2 constituting the resonator 1 has a substrate 6, a vibration part 3 that resonates at a specific resonance frequency, and a position that becomes a node region at the time of resonance in the vibration part 3. The support part 4a, 4b that is supported approximately symmetrically from both sides of the vibration part 3, and the input electrode 8 and the output electrode 9 fixed on the substrate 6 so as to intersect the vibration part 3 via the space 7 Is done. The substrate 6 is formed of a substrate having at least a surface on which the lower electrode 9 is formed having an insulating property. For example, a substrate in which an insulating film is formed over a semiconductor substrate, an insulating glass substrate, or the like is used.

The plurality of unit resonators 2 are arranged in a closed shape, and the vibrating portions 3 of the unit resonators 2 adjacent to each other are formed continuously and integrally, whereby the resonator 1 shown in FIG. 1 is configured. .
All the unit resonators 2 in parallel are arranged in an annular shape, for example, so as to be point-symmetric with respect to the center of the closed system. In this case, as shown in FIG. 1A, the closed and continuously integrated vibration unit 3 is formed in a circular shape.

In the resonator 1 formed in an annular shape by each unit resonator 2, the input electrode 8 of each unit resonator 2 has a concentric wiring (an input signal line together with a so-called input electrode) formed inside the circular vibrating portion 3. Connected to 10). The output electrode 8 of each unit resonator 2 is connected to a concentric wiring 11 (which becomes an input signal line together with a so-called output electrode) formed outside the circular vibrating portion 3. At this time, the wiring 10 of the input electrode 8 may be formed outside, or the wiring 11 of the output electrode 9 may be formed inside.
An electrode pad so-called input terminal t1 is led out so as to extend inwardly from the concentric wiring 10 on the input side, and an electrode pad so-called output terminal so as to extend outward from the concentric wiring 11 on the output side. t2 is derived.

  In such a resonator 1, the vibration unit 3 to which the DC bias voltage V is applied receives an external force due to an electrostatic force due to the AC signal input from the input terminal t <b> 1. And the vibration part 3 vibrates with a specific resonant frequency. In the vibration part 3, the vibration part 3 positioned between the support parts 4 a and 4 b facing each other with the vibration part 3 becomes a node region when the vibration part 3 resonates. The unit resonator 2 utilizes a second-order mode flexural vibration. The plurality of unit resonators 2 are arranged in a circle so that antinodes and nodes of vibration in the vibration unit 3 are alternately arranged.

  In the resonator 1 shown in FIG. 1, since a plurality of unit resonators 2 are arranged in a ring shape, the positional relationship between the paralleled resonators 1 and the unit resonators 2 is all unit resonances. It becomes equal in the child 2, and the structural variation of the unit resonator 2 hardly occurs. In addition, the stress applied to the vibration part 3 of each unit resonator 2 is all equal. Accordingly, variations in the characteristics of the individual unit resonators 2 can be suppressed, and a decrease in Q value accompanying parallelization can be suppressed. In the resonator 1, a Q value equivalent to that of each unit resonator 2 can be obtained.

  Incidentally, in the resonator 1 shown in FIG. 1, there is a desire to adjust the resonance frequency after the processing of the resonator 1. As a result of intensive studies by the present inventors, a method has been found in which pressure is applied to each connection portion 12 between the support portions 4a and 4b and the vibration portion 5 as shown in FIG.

  FIG. 3 shows an enlarged view of a portion where the vibrating portion 3 of the unit resonator 2 is supported by the support portions 4a and 4b. The area of the vibration part 3 supported by the support parts 4a and 4b from both sides of the vibration part 3 is a node area. The vibration node extends in the vicinity of each connection portion 12 where the vibration portion 3 and the support portions 4a and 4b shown in FIG. 3 are connected, and hardly vibrates at the time of resonance (does not contribute to the resonance motion). The volume of the region of the vibration part 12 is greatly affected by the characteristics of the support parts 4a and 4b. For example, if the support parts 4a and 4b are hard and the contact area with the vibration part 3 is designed to be large, a large node area is obtained. Can do.

The inventors of the present application paid attention to a physical phenomenon in which the resonance frequency is increased or decreased by increasing or decreasing the pressure from the support portions 4 a and 4 b applied to the vibrating portion 3 via the connection portion 12.
In the following description, the force by which the support parts 4a and 4b push the vibration part 3 is defined as a positive pressure, and the force by which the vibration part 3 is pulled by the support parts 4a and 4b is defined as a negative pressure. According to this definition, the resonance frequency increases when the connection portion receives a positive pressure, and conversely, the resonance frequency decreases when the connection portion receives a negative pressure (= tensile). The volume of the node region of the vibration part 3 supported from both sides by the support parts 4a and 4b is changed by the pressurization, and the effective mass m of the vibration part 3 contributing to the resonance motion is increased or decreased due to this change. This is the principle of frequency fluctuation.

  The resonance frequency fr is expressed by the following formula 1 by the effective mass m of the resonance mode excited by the unit resonator 2 of the resonator 1 shown in FIG. 2 and the spring constant k.

Here, α is a constant determined by the structure of the unit resonator and the excited resonance mode.
According to Equation 1, the spring constant k of the vibration part 3 increases in proportion to the pressure applied to the connection part 12. The ideal effective mass is calculated from the density ρ, length, width, and thickness of the vibration part 3, but is smaller than the calculated value because a region called a vibration node is generated in the actual resonance motion. The value is determined.

  From the relationship between the pressure applied to the connecting portion 12 and the effective mass m of the vibrating portion 3 and the relationship expressed by Equation 1, the relationship between the pressure applied to the connecting portion 3 and the resonance frequency fr is as shown in FIG. As shown. That is, the resonance frequency fr increases in proportion to the pressure applied to the connection portion 12. In addition, since the positive pressure applied to the connecting portion and the effective mass m are inversely proportional to each other, the effective mass m of the vibrating portion 3 contributing to vibration decreases when the positive pressure applied to the connecting portion increases. Have a relationship.

  In the embodiment described below, based on this principle, a specific configuration for applying pressure to the connection portion 12 to the support portions 4a and 4b and the vibration portion 3 will be described.

[First Embodiment]
FIG. 5 shows a schematic cross-sectional configuration of the unit resonator according to the first embodiment of the present invention. 5A and 5B are cross-sectional views along the line AA in the resonator 1 of FIG. 1, as in FIG. 2, and are obtained by modifying a part of the unit resonator 2 shown in FIG. 5A and 5B, parts corresponding to those in FIGS. 1 and 2 are denoted by the same reference numerals, and redundant description is omitted.

  As shown in FIG. 5A, in the unit resonator according to this embodiment, the electrode 13 is disposed on the surface of the substrate 6 facing the support portions 4a and 4b. The electrode 13 is connected to the voltage control circuit 14. The electrode 13 and the voltage control circuit 14 constitute a pressure control mechanism. In this embodiment, the support portions 4 a and 4 b are formed of conductive polysilicon doped with phosphorus (P), and are controlled to an arbitrary potential different from that of the electrode 13.

  FIG. 5A shows a so-called initial state in which no voltage is supplied to the electrode 13 from the voltage control circuit 14. From this initial state, the voltage control circuit 14 supplies a desired voltage to the electrode 13 and applies a potential difference between the electrode 13 and the support portions 4a and 4b. If it does so, electrostatic attraction will generate | occur | produce between the support parts 4a and 4b and the electrode 13, and the support parts 4a and 4b will be drawn near to the electrode 13 side, respectively. Due to this, the vibration part 3 supported by the support parts 4a and 4b is also drawn toward the substrate 6 as shown in FIG. 5B. In such a phenomenon, a pressure is applied to each connection part of the vibration part 3 and the support parts 4a and 4b in a direction indicated by an arrow p1 in FIG. 5B. That is, the vibration part 3 receives negative pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 increases.

  In this way, by applying a potential difference between the electrode 13 and the support portions 4a and 4b, the support portions 4a and 4b can be deformed by electrostatic attraction, and the pressure applied to the connection portion can be indirectly controlled.

FIG. 6 shows the relationship of the resonance frequency with respect to the pressure applied from the support portions 4a and 4b to the vibrating portion 3 in the unit resonator according to this embodiment. In FIG. 6, when the initial state of FIG. 5A is indicated by A, the state in FIG. 5B is that the positive pressure applied from the support portions 4 a and 4 b to the vibrating portion 3 is reduced. The resonance frequency fr decreases from the initial state.
Thus, when a positive pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 which is a node region between the support parts 4a and 4b changes, and the resonance frequency is Change. Then, by finely adjusting the voltage supplied from the voltage control circuit 14 to the electrode 13, the pressure applied to the connection portion can be finely adjusted.

[Second Embodiment]
FIG. 7 shows a schematic cross-sectional configuration of a unit resonator according to the second embodiment of the present invention. 7A and BC are also cross-sectional views along the line AA in the resonator 1 of FIG. 1 as in FIG. 5, and are obtained by modifying a part of the unit resonator 2 shown in FIG. 7A, 7B, and 7C, parts corresponding to those in FIGS.

  As shown in FIG. 7A, in the unit resonator according to the present embodiment, a plurality of electrodes, and four electrodes 15 in the present embodiment, are respectively provided on the substrate surface facing the support portions 4a and 4b. To the vibrating part 3 in order. The four electrodes 15 on both sides are connected to the voltage control circuit 14. The plurality of electrodes 15 and the voltage control circuit 14 constitute a pressure control mechanism. In the present embodiment, the support portions 4 a and 4 b are formed of conductive polysilicon doped with phosphorus (P), and have a circuit that controls the potential independently of the electrode 15. Also in FIG. 7, illustration of a circuit for controlling the potentials of the support portions 4a and 4b is omitted.

  FIG. 7A shows a so-called initial state in which no voltage is supplied to all the electrodes 15 from the voltage control circuit 14. From this initial state, as shown in FIG. 7B, the voltage control circuit 14 supplies a desired voltage to some of the electrodes 15, and adds a potential difference between the electrode 15 to which the voltage is supplied and the support portions 4a and 4b. . In the diagram shown in FIG. 7B, a voltage is supplied to the two electrodes 15 from the respective fixed portions 5 side. If it does so, electrostatic attraction will generate | occur | produce between the support parts 4a and 4b and the electrode 15 to which the voltage was supplied, and the support parts 4a and 4b will be drawn near to the electrode 15 side. Due to this, the vibration part 3 supported by the support parts 4a and 4b is also drawn toward the substrate 6 as shown in FIG. 7B. In such a phenomenon, pressure is applied to the connecting portions of the vibrating portion 3 and the support portions 4a and 4b in the direction indicated by the arrow p1 in FIG. 7B. That is, the vibration part 3 receives negative pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 increases.

  Next, a voltage is applied to all four electrodes 15 on both sides, and a potential difference is applied between all the electrodes 15 and the support portions 4a and 4b. Then, as shown in FIG. 7C, an electrostatic attractive force larger than that of the example shown in FIG. 7B is generated between the four electrodes 15 on both sides and the support portions 4a and 4b. 4b is drawn toward the electrode 15 side. Due to this, the vibration part 3 supported by the support parts 4a and 4b is also drawn toward the substrate 6 as shown in FIG. 7C. In the example shown in FIG. 7C, a pressure greater than that in the example shown in FIG. 7B is applied to the connection portions of the vibrating portion 3 and the support portions 4a and 4b in the direction indicated by the arrow p1. That is, the vibration part 3 receives a negative pressure having a larger absolute value than the example shown in FIG. 7B from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 further increases.

  FIG. 8 shows the relationship of the resonance frequency with respect to the pressure applied from the support portions 4a and 4b to the vibrating portion 3 in the unit resonator of this embodiment. In FIG. 8, when the initial state of FIG. 7A is indicated by A, the state in FIG. 7B is that the pressure applied from the support portions 4a and 4b to the vibration portion 3 decreases, so that the effective mass of the vibration portion 3 increases. As shown by B in FIG. 8, the resonance frequency fr decreases from the initial state. Further, in the state in FIG. 7C, the pressure applied from the support portions 4a and 4b to the vibrating portion 3 is reduced as compared with the state shown in FIG. As shown, the resonance frequency fr is further reduced.

  In this way, when a pressure is applied in a direction intersecting the vibration direction of the vibration part 3, the effective mass of the resonance mode excited by the vibration part 4 which is a node region between the support parts 4a and 4b changes, and resonance occurs. The frequency changes. Then, by adjusting the number of supplied electrodes 15 from the voltage control circuit 14, the pressure applied to the connection portion can be adjusted, and accordingly, the resonance frequency fr can be adjusted.

  In this embodiment, as an example, four electrodes 15 are arranged on both sides. However, the number of electrodes 15 is not limited to four, and the number of electrodes 15 can be changed as necessary. It can be increased to a plurality. In addition, as shown in FIG. 7B, when a voltage is applied to some of the plurality of electrodes, the same pressure is applied to the connecting portion between the vibrating portion 3 and the support portions 4a and 4b. The same voltage may be applied to the electrodes at positions symmetrical with respect to the vibration part 3.

  According to the present embodiment, the pressure applied to the connecting portion can be finely adjusted according to the magnitude of the applied voltage supplied to the electrode, and the electrostatic attractive force can be reduced by selecting the electrode to which the voltage is applied. It can also be controlled. The electrostatic attractive force can be increased by increasing the number of electrodes to be selected, and the electrostatic attractive force can be finely adjusted by the combination of the selected electrodes. If combined with voltage magnitude control, the electrostatic attractive force can be adjusted more precisely, and the frequency can be adjusted with high accuracy.

[Third Embodiment]
FIG. 9 shows a schematic cross-sectional configuration of a unit resonator according to the third embodiment of the present invention. 9A and 9B are cross-sectional views along the line AA in the resonator 1 of FIG. 1, as in FIG. 2, and are obtained by modifying a part of the unit resonator 2 shown in FIG. 9A and 9B, parts corresponding to those in FIGS.

  As shown in FIG. 9A, in the unit resonator according to the present embodiment, the support portions 4a and 4b and the space are located at the upper portions of the support portions 4a and 4b and opposite to the substrate 6 side. The electrode 17 is arranged through the gap. The electrode 17 is connected to the voltage control circuit 14. The electrode 17 is formed, for example, by being fixed to a sealing film 16 serving as an upper substrate provided to hermetically seal the unit resonator. The electrode 17 and the voltage control circuit 14 constitute a pressure control mechanism. In the present embodiment, the support portions 4 a and 4 b are formed of conductive polysilicon doped with phosphorus (P), and have a circuit for controlling the potential independently of the electrode 17. In FIG. 9, a circuit for controlling the potentials of the support portions 4a and 4b is not shown.

  FIG. 9A shows a state of a so-called unit resonator in an initial state in which no voltage is supplied to the electrode 17 from the voltage control circuit 14. From this initial state, a desired voltage is supplied to the electrode 17 by the voltage control circuit 14, and a potential difference is applied between the electrode 17 and the support portion 4. If it does so, electrostatic attraction will generate | occur | produce between the support parts 4a and 4b and the electrode 17, and the support parts 4a and 4b will be drawn near to the electrode 17 side. Due to this, the vibration part 3 supported by the support parts 4a and 4b is also drawn toward the substrate 6 as shown in FIG. 9B. In such a phenomenon, a pressure is applied to each connection part of the vibration part 3 and the support parts 4a and 4b in the direction indicated by the arrow p1 in FIG. 9B. And the vibration part 3 receives a negative pressure from the support parts 4a and 4b of both sides, and the effective mass of the vibration part 3 increases.

  Thus, by applying a potential difference between the electrode 17 and the support portions 4a and 4b, the support portions 4a and 4b can be deformed by electrostatic attraction, and the pressure applied to the connection portion can be indirectly controlled.

  Also in this embodiment, when the initial state of FIG. 9A is indicated by A in FIG. 6, the state in FIG. 9B is that the pressure applied from the support portions 4a and 4b to the vibrating portion 3 is reduced. The applied pressure decreases, and the resonance frequency fr decreases from the initial state as shown by B in FIG.

  Thus, when a pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 that is a node region between the support parts 4a and 4b changes, and the resonance frequency changes. Also in the present embodiment, the pressure applied to the connecting portion can be finely adjusted by finely adjusting the voltage supplied from the voltage control circuit 14 to the electrode 17.

  In the present embodiment, the electrode 17 is formed on the sealing film 16, but is not limited thereto, and is a position facing the support portions 4 a and 4 b and opposite to the substrate 6. Another upper substrate formed at the side position can also be configured. Since the sealing film 16 is necessarily provided in order to keep the vibration part 3 airtight, when the electrode 17 is formed on the sealing film 16 as in this embodiment, the number of processes is increased. Electrode can be provided.

  In addition, according to the present embodiment example, by configuring the electrode 17 on the side opposite to the substrate 6, the electrode 17 is positioned at a distance from the input electrode 8 and the output electrode 9 shown in FIG. 1. Noise can be reduced.

[Fourth Embodiment]
FIG. 10 shows a schematic cross-sectional configuration of a unit resonator according to the fourth embodiment of the present invention. 10A and 10B are cross-sectional views along the line AA in the resonator 1 of FIG. 1, as in FIG. 2, and are obtained by modifying a part of the unit resonator 2 shown in FIG. 10A and 10B, parts corresponding to those in FIGS.

  As shown in FIG. 10A, in the unit resonator according to this embodiment, the electrodes 18 are arranged at positions offset outward on the surface of the substrate 6 facing the fixing portions 5 on both sides. The electrode 18 is connected to the voltage control circuit 14. The electrode 18 and the voltage control circuit 14 constitute a pressure control mechanism. In the present embodiment, the fixing portion 5 is made of conductive polysilicon doped with phosphorus (P), and is controlled to an arbitrary potential different from that of the electrode 18. In FIG. 10, the illustration of the circuit for controlling the potential of the fixed portion 5 is omitted.

  FIG. 10A shows a so-called unit resonator in an initial state in which no voltage is supplied to the electrode 18 from the voltage control circuit 14. From this initial state, the voltage control circuit 14 supplies a desired voltage to the electrode 18 and applies a potential difference between the electrode 18 and the fixed portion 5. As a result, an electrostatic attractive force is generated between the fixed portion 5 and the electrode 18, and the fixed portion 5 is attracted toward the electrode 13 and deformed as indicated by an arrow p2. Due to this, the vibration part 3 supported by the support parts 4a and 4b is pulled by the support parts 4a and 4b as shown in FIG. 10B. In such a phenomenon, pressure is applied to the connecting portions of the vibrating portion 3 and the support portions 4a and 4b in the direction indicated by the arrow p1 in FIG. 10B. That is, the vibration part 3 receives negative pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 increases.

  In this way, by applying a potential difference between the electrode 18 and each of the fixed portions 5, the fixed portion 5 can be deformed by electrostatic attraction and the pressure applied to the connection portion can be indirectly controlled.

Also in this embodiment, as shown in FIG. 6, when the initial state in FIG. 10A is indicated by A, the state in FIG. 10B is that the support portions 4a and 4b are vibrating portions so that a negative pressure is applied to the connecting portion. Since 3 is pulled, as shown by B in FIG. 6, the resonance frequency fr decreases from the initial state.
Thus, when a pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 that is a node region between the support parts 4a and 4b changes, and the resonance frequency changes. Then, by finely adjusting the voltage supplied from the voltage control circuit 14 to the electrode 13, the pressure applied to the connection portion can be finely adjusted.

  Further, by forming the electrode 18 on the substrate 6 facing the fixed portion 5, the electrode 18 is located at a distance from the input electrode 8 and the output electrode 9 shown in FIG. Furthermore, the control range of the applied pressure can be increased. This is because the influence of noise on the bias signal is reduced by reducing the coupling between the bias line and the signal line. The magnitude of the noise coupling increases in proportion to the square or the third power of the distance between lines. Therefore, disposing the electrode 18 under the fixed portion 5 as in the present embodiment is advantageous for reducing noise.

[Fifth Embodiment]
FIG. 11 shows a schematic cross-sectional configuration of a unit resonator according to the fifth embodiment of the present invention. 11A and 11B are cross-sectional views along the line AA in the resonator 1 of FIG. 1 as in FIG. 5, and are obtained by modifying a part of the unit resonator 2 shown in FIG. 11A and 11B, parts corresponding to those in FIG.

  As shown in FIG. 11A, in the unit resonator according to this embodiment, three electrodes 19 are arranged at positions offset outward on the surface of the substrate 6 facing the respective fixing portions 5. The three electrodes 19 on both sides are connected to the voltage control circuit 14. The plurality of electrodes 19 and the voltage control circuit 14 constitute a pressure control mechanism. In the present embodiment, the fixing portion 5 is formed of conductive polysilicon doped with phosphorus (P), and has a circuit for controlling the potential independently of the electrode 19. Also in FIG. 11, the circuit for controlling the potential of the fixed portion 5 is not shown.

  FIG. 11A shows a so-called unit resonator in an initial state in which no voltage is supplied from the voltage control circuit 14 to all the electrodes 15. From this initial state, as shown in FIG. 11B, a desired voltage is supplied to the electrode 15 by the voltage control circuit 14, and a potential difference is applied between the electrode 15 and the fixed portion 5. In the diagram shown in FIG. 11B, it is assumed that voltage is supplied to all three electrodes 19. Then, an electrostatic attractive force is generated between each fixed portion 5 and the electrode 15 supplied with voltage, and the fixed portion 5 is deformed to the electrode 19 side indicated by the arrow p2. Due to this, the vibration part 3 supported by the support parts 4a and 4b is pulled by the support parts 4a and 4b as shown in FIG. 11B. In such a phenomenon, a pressure is applied to each connection part of the vibration part 3 and the support parts 4a and 4b in a direction indicated by an arrow p1 in FIG. 11B. That is, the vibration part 3 receives negative pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 increases.

  In this way, by applying a potential difference between the electrode 19 and each fixing part 5, the fixing part 5 can be deformed by electrostatic attraction, and the pressure applied to the connection part can be controlled indirectly.

Also in this embodiment, as shown in FIG. 6, when the initial state in FIG. 11A is indicated by A, the state in FIG. 11B is that the support portions 4a and 4b are vibrating portions so that a negative pressure is applied to the connecting portion. Since 3 is pulled, as shown by B in FIG. 6, the resonance frequency fr decreases from the initial state.
Thus, when a pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 that is a node region between the support parts 4a and 4b changes, and the resonance frequency changes. Then, by finely adjusting the voltage supplied from the voltage control circuit 14 to the electrode 13, the pressure applied to the connection portion can be finely adjusted.

  Furthermore, according to the present embodiment, the pressure applied to the connecting portion can be finely adjusted according to the magnitude of the applied voltage supplied to the electrode, and the electrostatic voltage can be selected by selecting the electrode to which the voltage is applied. The attractive force can also be controlled. In the present embodiment, as shown in FIG. 11B, an example in which voltage is applied to all three electrodes 19 has been shown. However, the electrostatic attractive force can be changed by changing the number of electrodes to be selected, and the selected voltage is selected. The electrostatic attractive force can be finely adjusted by a combination of electrodes. If combined with voltage magnitude control, the electrostatic attractive force can be adjusted more precisely, and the frequency can be adjusted with high accuracy.

  In this embodiment, as an example, three electrodes 19 are arranged on both sides. However, the number of electrodes is not limited to three, and a plurality of electrodes 15 can be provided as necessary. Can be increased to pieces. In addition, by forming the electrode 19 on the substrate 6 facing the fixed portion 5, the electrode 19 is located at a distance from the input electrode 8 and the output electrode 9 shown in FIG. Furthermore, the control range of the applied pressure can be increased.

[Sixth Embodiment]
FIG. 12 shows a schematic cross-sectional configuration of a unit resonator according to the sixth embodiment of the present invention. 12A, 12B, and 12C are also cross-sectional views along the line AA in the resonator 1 of FIG. 1, similarly to FIG. 5, and are obtained by modifying a part of the unit resonator 2 shown in FIG. . 12A, 12B, and 12C, parts corresponding to those in FIG.

  As shown in FIG. 12A, in the unit resonator according to the present embodiment, a plurality of electrodes 20 are disposed on the surface of the substrate 6 facing the respective fixing portions 5, and four electrodes are disposed in this example. The four electrodes 20 formed on both sides are connected to the voltage control circuit 14. The plurality of electrodes 20 and the voltage control circuit 14 constitute a pressure control mechanism. In the present embodiment, the fixing portion 5 is made of conductive polysilicon doped with phosphorus (P), and has a circuit for controlling the potential independently of the electrode 20. Also in FIG. 12, illustration of a circuit for controlling the potential of the fixed portion 5 is omitted.

  FIG. 12B shows a so-called unit resonator in an initial state in which no voltage is supplied from the voltage control circuit 14 to all the electrodes 20. From this initial state, as shown in FIG. 12A, the voltage control circuit 14 supplies a desired voltage to the two electrodes 20 that are biased toward the vibrating portion 3 side among the four electrodes 20. A potential difference is applied between the fixed portions 5. Then, an electrostatic attractive force is generated between each fixed portion 5 and the electrode 20 to which the voltage is supplied, and the fixed portion 5 is drawn toward the electrode 20 to which the voltage is supplied, that is, the vibrating portion 3 side. Deform. Due to this, the vibration part 3 supported by the support parts 4a and 4b receives positive pressure from the support parts 4a and 4b as shown in FIG. 12A. In such a phenomenon, pressure is applied to the connecting portions of the vibrating portion 3 and the support portions 4a and 4b in the direction indicated by the arrow p3 in FIG. 12A. That is, the vibration part 3 receives a positive pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 decreases.

  Next, as illustrated in FIG. 12C, the voltage control circuit 14 supplies a desired voltage to the two electrodes 20 at the positions biased to the outer side away from the vibration unit 3 among the four electrodes 20. A potential difference is applied between the fixed portion 5 and the fixed portion 5. If it does so, electrostatic attraction will generate | occur | produce between each fixed part 5 and the electrode 20 to which the voltage was supplied, and the fixed part 5 will be drawn near to the electrode 20 side to which the voltage was supplied, and will deform | transform. At this time, since the electrode 20 to which the voltage is applied is on the outside, the fixed portion 5 is deformed so as to be drawn to the opposite side with respect to the vibrating portion 3. Due to this, the vibration part 3 supported by the support parts 4a and 4b receives negative pressure from the support parts 4a and 4b as shown in FIG. 12C. In such a phenomenon, a pressure is applied to each connection part of the vibration part 3 and the support parts 4a and 4b in the direction indicated by the arrow p1 in FIG. 12C. That is, the vibration part 3 receives negative pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 increases.

  In this way, by applying a potential difference between the electrode 20 and each of the fixed portions 5, the fixed portion 5 can be deformed by electrostatic attraction and the pressure applied to the connection portion can be indirectly controlled.

  Also in the unit resonator of this embodiment example, when the initial state of FIG. 12B is indicated by B in FIG. 8, the state in FIG. 12A indicates that the pressure applied from the support portions 4a and 4b to the vibrating portion 3 is as shown in FIG. Therefore, the effective mass of the vibration part 3 decreases, and the resonance frequency fr increases as indicated by A in FIG. Further, in the state in FIG. 12C, the pressure applied from the support parts 4a and 4b to the vibrating part 3 is increased as compared with the state shown in FIG. 12B, so that the effective mass of the vibrating part 3 is further increased. As shown, the resonance frequency fr decreases.

  Thus, when a pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 that is a node region between the support parts 4a and 4b changes, and the resonance frequency changes. Then, by adjusting the selection position of the supplied electrode 20 from the voltage control circuit 14, the pressure applied to the connection portion can be adjusted, and accordingly, the resonance frequency fr can be adjusted.

In this embodiment, as an example, four electrodes 20 are arranged on both sides. However, the number of electrodes 20 is not limited to four and the number of electrodes 20 is increased to a plurality if necessary. Can do.
Furthermore, according to the present embodiment, the pressure applied to the connecting portion can be finely adjusted according to the magnitude of the applied voltage supplied to the electrode, and the electrostatic voltage can be selected by selecting the electrode to which the voltage is applied. The attractive force can also be controlled. Further, the electrostatic attractive force can be changed by changing the number and position of the selected electrodes, and the electrostatic attractive force can be finely adjusted by the combination of the selected electrodes. If combined with voltage magnitude control, the electrostatic attractive force can be adjusted more precisely, and the frequency can be adjusted with high accuracy.

  Further, by forming the electrode 18 on the substrate 6 facing the fixed portion 5, the electrode 20 is located at a distance from the input electrode 8 and the output electrode 9 shown in FIG. Furthermore, the control range of the applied pressure can be increased.

[Seventh Embodiment]
FIG. 13 shows a schematic cross-sectional configuration of a unit resonator according to the seventh embodiment of the present invention. 13A and 13B are cross-sectional views taken along the line AA in the resonator 1 of FIG. 1, similarly to FIG. 2, and a part of the unit resonator 2 shown in FIG. 2 is modified. 13A and 13B, parts corresponding to those in FIGS.

  As shown in FIG. 13A, in the unit resonator according to this embodiment, the electrode 21 is disposed on the surface of the substrate 6 facing the support portions 4 a and 4 b and the vibration portion 3. The electrode 21 is connected to the voltage control circuit 14. The electrode 21 and the voltage control circuit 14 constitute a pressure control mechanism. In this embodiment, the support portions 4a and 4b and the vibration portion 3 are formed of conductive polysilicon doped with phosphorus (P) and have a circuit for controlling the potential independently of the electrode 21. Yes. In FIG. 13, a circuit for controlling the potentials of the support portions 4 a and 4 b and the vibration portion 3 is not shown.

  FIG. 13A shows a so-called initial state in which no voltage is supplied to the electrode 21 from the voltage control circuit 14. From this initial state, the voltage control circuit 14 supplies a desired voltage to the electrode 21, and a potential difference is applied between the electrode 21, the support portions 4 a and 4 b, and the vibration portion 3. If it does so, electrostatic attraction will generate | occur | produce between the support parts 4a and 4b and the vibration part 3, and the electrode 13, and the support parts 4a and 4b and the vibration part 3 will be drawn near to the electrode 21 side. In such a phenomenon, a pressure is applied to each connection part of the vibration part 3 and the support parts 4a and 4b in the direction indicated by the arrow p1 in FIG. 13B. That is, the vibration part 3 receives negative pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 increases.

  In this way, by applying a potential difference between the electrode 21 and the support portions 4a and 4b and the vibration portion 3, the support portions 4a and 4b and the vibration portion 3 are deformed by electrostatic attraction, and indirectly connected portions. The pressure applied to can be controlled.

Also in this embodiment, as shown in FIG. 6, when the initial state of FIG. 13A is indicated by A, the state in FIG. 13B is that the pressure applied from the support portions 4a and 4b to the vibrating portion 3 is reduced. As shown by B in FIG. 6, the resonance frequency fr decreases from the initial state.
Thus, when a pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 that is a node region between the support parts 4a and 4b changes, and the resonance frequency changes. Then, by finely adjusting the voltage supplied from the voltage control circuit 14 to the electrode 21, the pressure applied to the connection portion can be finely adjusted.

[Eighth Embodiment]
FIG. 14 shows a schematic cross-sectional configuration of a unit resonator according to the eighth embodiment of the present invention. 14A, 14B, and 14C are also cross-sectional views along the line AA in the resonator 1 of FIG. 1, and are obtained by modifying a part of the unit resonator 2 shown in FIG. 14A, 14B, and 14C, parts corresponding to those in FIG.

  As shown in FIG. 14A, in the unit resonator according to this embodiment, a plurality of, for example, seven electrodes 22 are arranged at equal intervals on the surface of the substrate 6 facing the support portions 4a and 4b and the vibration portion 3. Yes. The seven electrodes 22 are connected to the voltage control circuit 14. The plurality of electrodes 22 and the voltage control circuit 14 constitute a pressure control mechanism. In the present embodiment, the support portions 4a and 4b and the vibration portion 3 are formed of conductive polysilicon doped with phosphorus (P), and have a circuit for controlling the potential independently of the electrode 22. Yes. Also in FIG. 12, illustration of the circuit which controls the electric potential of support part 4a, 4b and the vibration part 3 is abbreviate | omitted.

  FIG. 14A shows a so-called initial state in which no voltage is supplied to all the electrodes 22 from the voltage control circuit 14. From this initial state, as shown in FIG. 14B, the voltage control circuit 14 supplies a desired voltage to some of the electrodes 22, and the electrodes 22, the supporting portions 4a and 4b, and the vibrating portion 3 to which the voltages are supplied. A potential difference is added between In the diagram shown in FIG. 14B, voltage is supplied to the three electrodes 22 from the respective fixed portions 5 side, that is, from the outside. If it does so, electrostatic attraction will generate | occur | produce between the support parts 4a and 4b and the vibration part 3, and the electrode 22 to which the voltage was supplied, and the support parts 4a and 4b and the vibration part 3 will be drawn near to the electrode 22 side. In such a phenomenon, a pressure is applied to each connection part of the vibration part 3 and the support parts 4a and 4b in a direction indicated by an arrow p1 in FIG. 14B. That is, the vibration part 3 receives negative pressure from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 increases.

  Next, a voltage is applied to all of the seven electrodes 11, and a potential difference is applied between all the electrodes 11 and the support portions 4a and 4b. Then, as shown in FIG. 14C, a larger electrostatic attraction than the example shown in FIG. 14B is generated between the seven electrodes 22 and the support portions 4a and 4b and the vibration portion 3, and the support portion 4a. 4b and the vibrating part 3 are drawn toward the electrode 15 side. In the example shown in FIG. 14C, a pressure larger than that in the example shown in FIG. 14B is applied to the connection portions of the vibrating portion 3 and the support portions 4a and 4b in the direction indicated by the arrow p1. That is, the vibration part 3 receives a negative pressure having a larger absolute value than the example shown in FIG. 14B from the support parts 4a and 4b on both sides, and the effective mass of the vibration part 3 further increases.

  In this embodiment, as shown in FIG. 8, when the initial state of FIG. 14A is indicated by A, the state in FIG. 14B is that the pressure applied from the support portions 4a and 4b to the vibrating portion 3 decreases. The effective mass of the vibration part 3 increases, and as shown by B in FIG. 8, the resonance frequency fr decreases from the initial state. Further, in the state in FIG. 14C, the pressure applied from the support portions 4a and 4b to the vibrating portion 3 is reduced as compared with the state shown in FIG. 14B, so that the effective mass of the vibrating portion 3 is further increased. As shown, the resonance frequency fr is further reduced.

  Thus, when a pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 that is a node region between the support parts 4a and 4b changes, and the resonance frequency changes. Then, by adjusting the number of electrodes 22 supplied from the voltage control circuit 14, the pressure applied to the connecting portion can be adjusted, and accordingly, the resonance frequency fr can be adjusted.

  In the present embodiment, as an example, both the seven electrodes 15 are arranged. However, the number is not limited to seven, and the number of electrodes 22 can be increased to a plurality if necessary. Further, as shown in FIG. 14B, when applying a voltage to a part of the plurality of electrodes, the vibration is applied so that the same pressure is applied to the connecting portion between the vibrating portion 3 and the support portions 4a and 4b. The same voltage is applied to the electrodes at positions symmetrical to the part.

  According to the present embodiment, the pressure applied to the connecting portion can be finely adjusted according to the magnitude of the applied voltage supplied to the electrode, and the electrostatic attractive force can be reduced by selecting the electrode to which the voltage is applied. It can also be controlled. The electrostatic attractive force can be increased by increasing the number of electrodes to be selected, and the electrostatic attractive force can be finely adjusted by the combination of the selected electrodes. If combined with voltage magnitude control, the electrostatic attractive force can be adjusted more precisely, and the frequency can be adjusted with high accuracy.

[Ninth Embodiment]
FIG. 15 shows a schematic cross-sectional configuration of a unit resonator according to the ninth embodiment of the present invention. 15A and 15B are cross-sectional views taken along the line AA in the resonator 1 of FIG. 1, similarly to FIG. 2, and a part of the unit resonator 2 shown in FIG. 2 is modified. 15A and 15B, parts corresponding to those in FIGS.

  As shown in FIG. 15A, in the unit resonator according to the present embodiment, the support portions 4a, 4b and the vibrating portion 3 are located on the opposite sides of the support portion 4a, 4b and the vibration portion 3 at opposite positions. The electrode 24 is arranged through the space 4b and the vibration part 3 and the space. The electrode 24 is connected to the voltage control circuit 14. The electrode 24 is formed, for example, by being fixed to a sealing film 23 provided for hermetically sealing the unit resonator. The electrode 24 and the voltage control circuit 14 constitute a pressure control mechanism. In the present embodiment, the support portions 4a and 4b and the vibration portion 3 are formed of conductive polysilicon doped with phosphorus (P), and have a circuit for controlling the potential independently of the electrode 24. Yes. In FIG. 15, the circuit for controlling the potentials of the support portions 4 a and 4 b and the vibration portion 3 is not shown.

  FIG. 15A shows a so-called initial state of the unit resonator in which no voltage is supplied to the electrode 24 from the voltage control circuit 14. From this initial state, the voltage control circuit 14 supplies a desired voltage to the electrode 24, and a potential difference is applied between the electrode 24, the support portions 4 a and 4 b, and the vibration portion 3. If it does so, electrostatic attraction will generate | occur | produce between the support parts 4a and 4b and the vibration part 3, and the electrode 24, and the support parts 4a and 4b and the vibration part 3 will be drawn near to the electrode 24 side. In such a phenomenon, a pressure is applied to each connection part of the vibration part 3 and the support parts 4a and 4b in a direction indicated by an arrow p1 in FIG. 15B. And the vibration part 3 receives a negative pressure from the support parts 4a and 4b of both sides, and the effective mass of the vibration part 3 increases.

  In this way, by applying a potential difference between the electrode 24 and the support portions 4a and 4b and the vibration portion 3, the support portions 4a and 4b and the vibration portion 3 are deformed by electrostatic attraction, and indirectly connected to the connection portion. The applied pressure can be controlled.

  Also in this embodiment example, when the initial state of FIG. 15A is indicated by A in FIG. 6, the state in FIG. 15B is that the pressure applied from the support portions 4a and 4b to the vibrating portion 3 is reduced. The applied pressure decreases, and the resonance frequency fr decreases from the initial state as shown by B in FIG.

  Thus, when a pressure is applied in a direction crossing the vibration direction of the vibration part 3, the effective mass of the vibration part 4 that is a node region between the support parts 4a and 4b changes, and the resonance frequency changes. Also in the present embodiment, the pressure applied to the connecting portion can be finely adjusted by finely adjusting the voltage supplied from the voltage control circuit 14 to the electrode 24.

  In this embodiment, the electrode 24 is formed on the sealing film 23. However, the present invention is not limited to this. The electrode 24 is located at a position facing the support portions 4a and 4b and is opposite to the substrate 6. Another upper substrate formed at the side position can also be configured. Since the sealing film 23 is necessarily provided in order to keep the vibration part 3 airtight, when the electrode 24 is formed on the sealing film 23 as in the present embodiment, the number of steps is increased. Electrode can be provided.

  In addition, according to the present embodiment example, by configuring the electrode 24 on the side opposite to the substrate 6, the electrode 24 is positioned away from the input electrode 8 and the output electrode 9 shown in FIG. Noise can be reduced.

  In the seventh to ninth embodiments described above, the electrodes are formed at positions facing the support portions 4a and 4b and the vibration portion. When the width of the vibration part 3 is long, the same effects as those described in the seventh to ninth embodiments can be obtained as an example in which the electrode is configured only at a position facing the vibration part 3. In the electrostatic drive type resonators according to the first to ninth embodiments described above, the resonance part 3, the support parts 4a and 4b, and at least the surface part of the fixed part 5 are continuously provided. It can be integrally formed of the same member, for example, impurity-doped polysilicon.

  The resonator composed of the unit resonators of the first to ninth embodiments described above can be used for an oscillation circuit. Hereinafter, a case where a resonator including a unit resonator having the above-described pressure control mechanism is actually used for an oscillation circuit will be described.

FIG. 16 shows a block diagram of an oscillator when a resonator including a unit resonator having the pressure control mechanism of the first to ninth embodiments is used in an oscillation circuit.
The oscillator 25 shown in FIG. 16 is supplied from an oscillation circuit 30 including, for example, a resonator 28 and a feedback circuit 29, a voltage control circuit 26 that supplies a voltage necessary for frequency adjustment, and a voltage control circuit 26. The trimming circuit 27 extracts the voltage obtained as a frequency adjustment voltage corresponding to the individual difference of the resonators 28 and supplies the voltage to the resonators 28.

The voltage control circuit 26 increases or decreases a voltage supplied from a power source (not shown) to a voltage necessary for frequency adjustment and supplies the voltage to the resonator 28, and also plays a role of stabilizing the power source.
The trimming circuit 27 is a circuit that adjusts the pressure control range of the pressure applied to the connection portion of the resonator 28, and includes, for example, an array circuit of polysilicon resistors. In the trimming circuit 27, an actual pressure control voltage necessary for controlling the pressure applied to the connection portion of the resonator 28 is extracted from the potential provided from the voltage control circuit 26. The resistance value of the array circuit functions as an adjustment circuit of frequency accuracy at the initial stage of manufacture by selecting polysilicon at the initial stage of manufacture.
As the resonator 28, a resonator composed of the unit resonators shown in the first to ninth embodiments is used. The resonator 28 is adjusted with high accuracy by the actual pressure control voltage extracted by the trimming circuit 27, and a desired resonance frequency is obtained.
Then, a signal having a resonance frequency adjusted with high accuracy by the resonator 28 is oscillated from the oscillation circuit 30 via the feedback circuit 29.
As described above, if the oscillator 25 is configured by interposing the trimming circuit 27 between the control voltage circuit 26 and the resonator 28, an oscillator having a small frequency deviation can be provided.

  FIG. 17 shows a circuit block diagram of an oscillator when a resonator including a unit resonator having the pressure control mechanism of the first to ninth embodiments is used in an oscillation circuit. In this example, the oscillator 32 includes, for example, a transmission circuit 30 including a resonator 28 and a feedback circuit 29, a voltage control circuit 26 connected to the resonator 28, a temperature sensor 33 and a memory connected to the voltage control circuit. 31. In FIG. 17, parts corresponding to those in FIG.

The temperature sensor 33 supplies temperature information to the voltage control circuit 26. Further, the memory 31 reads out the necessary control voltage value determined by the temperature information from the temperature sensor 33 and the resonance frequency characteristic to the voltage control circuit 26.
That is, the voltage control circuit 26 extracts a pressure control voltage for controlling the pressure applied to the connection portion of the resonator 28 from a voltage supplied from a power source (not shown), and based on the value from the temperature sensor 33, the memory 31 has a function of reading the corresponding information in 31 and changing the pressure control voltage supplied to the resonator 28. As a result, a pressure control voltage in which the temperature characteristic of the frequency is compensated is supplied to the resonator 28, and the pressure applied to the connection portion is controlled. Then, a signal having a resonance frequency adjusted with accuracy by temperature compensation is oscillated from the transmission circuit 30 via the feedback circuit 29.

The circuit block diagram shown in FIG. 18 is a circuit block diagram of an oscillator that combines the examples shown in FIGS. 16 and 17. That is, the oscillator 34 in this example includes an oscillation circuit 30 including a resonator 28 and a feedback circuit 29, a voltage control circuit 26 to which a memory 31 and a temperature sensor 33 are connected, a voltage control circuit 26, and a resonator 28. And a trimming circuit 27 connected between the two.
18, parts corresponding to those in FIGS. 16 and 17 are given the same reference numerals, and redundant description is omitted.

  According to the example shown in FIG. 18, by combining the functions of the temperature sensor 33 and the trimming circuit 27, it is possible to provide the resonator 28 with a high frequency initial accuracy and a temperature change compensation function at the same time. Thus, the resonance frequency adjusted with high accuracy from the controlled resonator 28 is oscillated from the oscillation circuit 30 via the feedback circuit 29. Thus, by combining the functions of the temperature sensor 33 and the trimming circuit 27, it is possible to realize the oscillator 34 having a frequency accuracy of TCXO class.

By the way, in an element such as a resonator, there is a problem that the vibration part thermally expands as the temperature of the element increases. FIG. 19A is a schematic plan view in which the input electrode and the output electrode are omitted from the annular resonator of FIG. 1, and FIG. 19B is an enlarged view of the main part. 19A and 19B, parts corresponding to those in FIG.
In the annular resonator, when the element undergoes thermal expansion, as shown by a broken line a in FIG. 19B, the vibration part 3 expands, whereby the vibration part 3 extends in the direction indicated by the arrow P4 in FIG. A force that spreads out is generated. As a result, a decrease in the resonance frequency is observed as the spring constant of the unit resonator decreases. At this time, in the unit resonator, when the support portions 4a and 4b are made of the same material as that of the vibration portion 3, the support portions 4a and 4b also extend in a range shown by a broken line b in FIG. 19B. From 4a and 4b, force acts in the direction of contracting the ring that has spread outward. However, in such expansion of the support portions 4a and 4b, a pressure that cancels the decrease in the resonance frequency is not applied.

  In the embodiment described below, an example in which the resonance frequency is adjusted by forming the vibration part and the support part from materials having different thermal expansion coefficients will be described.

[Tenth embodiment]
FIG. 20A shows a schematic plan view of the main part of a unit resonator according to the tenth embodiment of the present invention. FIG. 20A is a partial change of the configuration of the unit resonator 2 constituting the resonator 1 shown in FIG. 1, and portions corresponding to those in FIG.

  In the present embodiment, the vibration part 3 is supported from both sides by a support part 40 formed of a material having a higher thermal expansion coefficient than the material of the vibration part 3. In the present embodiment, for example, the pressure control mechanism is configured by the vibrating portion 3 and the support portion 40 formed of a material having a larger coefficient of thermal expansion than the material used for the vibrating portion 3.

FIG. 20B shows a schematic plan configuration of a resonator having the configuration shown in FIG. 20A. As the element thermally expands, the vibrating portion 3 tends to expand in the direction of the arrow P4. However, in the present embodiment example, the support portion 40 is formed of a material having a higher thermal expansion coefficient than the material constituting the vibration portion 3, so that the support portion 40 is thermally expanded, and the support portion 40 and the vibration portion 3. A positive pressure indicated by an arrow P5 is applied to the connecting portion. Then, the spring constant lowered by the thermal expansion of the vibration part 3 is compensated by the positive pressure applied to the connection part by the thermal expansion of the support part 40.
Thus, by forming the support part 40 with a material having a larger thermal expansion coefficient than that of the vibration part 3, it is possible to make the decrease in the resonance frequency relatively small.
Specifically, when the vibrating portion 3 is formed of polysilicon, the supporting portion 40 is formed of aluminum (Al) having a thermal expansion coefficient 10 times that of polysilicon, so that the pressure applied to the connecting portion can be reduced. The thermal expansion of the support part 40 can be applied in the direction of increasing the resonance frequency to suppress the decrease in the resonance frequency. As described above, in this embodiment, the pressure applied to the connection portion is generated due to the difference in the thermal expansion coefficient between the vibrating portion 3 and the support portion 40 corresponding to the thermal expansion of the vibrating portion 3.

  In the present embodiment, the inner support portion 40 that supports the vibrating portion 3 and the outer support portion 40 have the same configuration. The present embodiment is not limited to this, and is designed to change the size of the inner support portion 40 and the outer support portion 40 or to make the material have a different coefficient of thermal expansion. The overall thermal expansion coefficient of the support portion 40 can be ideally configured.

  Next, another exemplary embodiment of the unit resonator in which the pressure applied to the connection portion is generated due to the difference in the thermal expansion coefficient between the vibration portion and the support portion corresponding to the thermal expansion of the vibration portion will be described.

[Eleventh embodiment]
FIG. 21 shows a schematic plan view of the main part of the unit resonator according to the eleventh embodiment of the present invention. FIG. 21 shows a part of the configuration of the unit resonator 2 constituting the resonator 1 shown in FIG. In FIG. 21, parts corresponding to those in FIG.

  In the unit resonator according to this embodiment, the material of the support portion 41 is made of a material having a larger thermal expansion coefficient than the material of the vibration portion 3, and the support portion 41 is connected to the connection surface between the support portion 41 and the vibration portion 3. The rectangular parallelepiped has a longer width W2 in the perpendicular direction than the width W1. At this time, the width W1 of the connection surface of the support part 41 and the vibration part 3 is the same as the example shown in FIG. In the present embodiment, the pressure control mechanism is configured by the vibrating portion 3 and the support portion 41 formed of a material having a larger coefficient of thermal expansion than the material used for the vibrating portion 3.

Since the Q value of resonance tends to be reduced by increasing the connection surface, it is preferable in terms of resonance design to reduce the connection area. However, in order to apply a sufficient force to the connecting portion for temperature correction, it is desirable that the area is large.
In this embodiment, the contact area between the support portion 41 and the vibration portion 3 is kept constant by increasing the width W2 in the direction perpendicular to the connection surface without changing the width W1 of the connection surface. The support portion had a sufficient length in the longitudinal direction of the rectangular parallelepiped. With such a configuration, it is possible to secure a sufficient amount of expansion of the support portion 41 and increase the control pressure while maintaining the Q value.

[Twelfth embodiment]
FIG. 22 shows a schematic plan view of the main part of a unit resonator according to the twelfth embodiment of the present invention. FIG. 22 shows a part of the configuration of the unit resonator 2 constituting the resonator 1 shown in FIG. In FIG. 22, parts corresponding to those in FIG.

  In the unit resonator according to this embodiment, the material of the support portion 42 is made of a material having a larger thermal expansion coefficient than the material of the vibration portion 3, and the fixing portion 5 side of the support portion 42 is formed in a bifurcated manner. 22A is an example in which the forked portion is curved and the support portion 42 is configured, and FIG. 22B is an example in which the forked portion is linear and the support portion 43 is configured. In the present embodiment, the pressure control mechanism is configured by the vibration part 3 and the support parts 42 and 43 formed of a material having a larger coefficient of thermal expansion than the material used for the vibration part 3.

Taking FIG. 22A as an example, at the time of thermal expansion, expansion of the support part 42 extending from the fixed part 5 to the fork is urged toward the connection part between the support part 42 and the vibration part 3 at the crotch part. Therefore, the expansion length as the support portion 42 can be expanded, and as a result, a larger pressure can be applied to the connection portion.
In addition, since the support portion 42 is configured to be bifurcated, the spring is connected in parallel to the vibrating portion 3. For this reason, even if the length of the support part 42 is extended, the spring constant can be maintained. As described above, since the spring constant can be kept high, it is possible to obtain resistance to electrostatic breakdown assumed during manufacturing or resonance vibration.
The same applies to FIG. 22B.

  In the configuration of the present embodiment example, the same effects as those of the tenth and eleventh embodiments can be obtained, the effect of obtaining a pressure larger than that of the unit resonator according to the eleventh embodiment, and the breakdown resistance of the resonator. The effect that it can be improved is obtained.

[Thirteenth embodiment]
23A and 23B show a schematic plane and a cross-sectional configuration of the main part of a unit resonator according to the thirteenth embodiment of the present invention. FIG. 23A is similar to FIG. 20 except that the configuration of the valley resonator 2 constituting the resonator 1 shown in FIG. 1 is partially changed. In FIG. 23A, parts corresponding to those in FIG.

  In the unit resonator according to this embodiment, the support portion 43 has a laminated structure of materials having different thermal expansion coefficients. FIG. 23B shows a cross-sectional configuration along the line BB of the support portion 44 shown in FIG. 23A.

In this embodiment, as shown in FIG. 23B, the material of the upper layer portion 44a of the support portion 44 is a material having a large thermal expansion coefficient with respect to the lower layer portion 44b of the support portion 43. For example, the lower layer portion 44b is made of polysilicon, and the upper layer portion 44a is made of aluminum (Al).
With such a laminated structure, the coefficient of thermal expansion changes inside the support portion 44. Therefore, when the support portion 44 expands, the support portion 44 is deformed as shown in FIG. 5B. That is, since the amount of expansion of the upper layer portion 44a is larger than that of the lower layer portion 44b, the support portion 44 bends toward the substrate side.

FIG. 24 and FIG. 25 show a modification of the support portion formed of a laminated structure of materials having different expansion coefficients. FIG.24 and FIG.25 is sectional drawing of a support part similarly to FIG. 23B.
The configuration shown in FIG. 24 is an example in which a coating film 45a is formed of, for example, aluminum (Al) having a larger expansion coefficient than polysilicon on the side surface and the upper surface of the support body 45b made of polysilicon, for example.
25 includes, for example, a support body 46b made of, for example, polysilin on a lower layer film 46c made of SiO ₂ , and the side surface and the upper surface of the support body 46b are made of polysilicon. In this example, the coating film 46a is formed of, for example, aluminum (Al) having a large expansion coefficient.
In the example shown in FIGS. 24 and 25, the same effect as in FIG. 22 can be obtained.

  In the first to thirteenth embodiments described above, the configuration of the unit resonator 2 configuring the annular resonator 1 shown in FIG. 1 has been described, but the present invention is not limited to this. is not. In the unit resonators shown in the first to thirteenth embodiments, the input / output electrodes are formed by the lower electrodes on the substrate and vibrate in the secondary mode. The unit resonator can be configured to vibrate in a drive mode other than the secondary mode, for example, the primary mode or the tertiary mode, by changing the configuration of the input / output electrodes. If the vibration part is used as an input electrode and the lower electrode is used as an output electrode, it can be vibrated in the primary mode.

  26A and 26B show schematic plan configurations of other resonators to which the present invention can be applied. In FIGS. 26A and 26B, parts corresponding to those in FIG.

  In the resonator 1 shown in FIG. 1, the unit resonator 2 is configured in a ring shape, but in the example shown in FIG. 26A, it is not a closed system. Also in the resonator 50 shown in FIG. 26A, the vibration part 3 is supported symmetrically by the support parts 4a and 4b from both sides, and the part of the vibration part 3 supported by the support parts 4a and 4b becomes a node part. Also in this resonator 50, by applying the first to thirteenth embodiments, pressure can be applied to the connecting portion between the support portions 4a and 4b and the vibrating portion 3, so the resonance frequency is Can be adjusted.

  The resonator 51 shown in FIG. 26B is an example in which support portions 4a and 4b are alternately formed on one side and the other side of the vibration portion 3 with respect to a vibration node. Thus, even if the vibration part 3 is not supported by the support part from a symmetrical position, a pressure is applied to the connection part between the support parts 4a and 4b and the vibration part 3 in a direction crossing the vibration direction. be able to. Therefore, also in the resonator 51 as shown in FIG. 26B, by applying the first to thirteenth embodiments, a pressure is applied to the connection portion between the support portions 4 a and 4 b and the vibration portion 3. Therefore, the resonance frequency can be adjusted.

  The examples shown in the tenth to thirteenth embodiments can be applied to the resonators shown in FIGS. FIG. 27 shows a resonator in which the annular vibrating portion 3 is supported only by the outer support portion 40 in the resonator shown in FIG. FIG. 28 shows a resonator in which the annular vibrating portion 3 is supported only by the inner support portion 40 in the resonator shown in FIG. In FIG. 27 and FIG. 28, the same reference numerals are given to the portions corresponding to FIG.

  As shown in FIGS. 27 and 28, even in a resonator supported only on one side of the vibration part 3, the support part 40 and the vibration part 3 are formed of materials having different coefficients of thermal expansion, thereby supporting the support part 40. A pressure is applied to the connection part between the vibration part 3 and the decrease in the resonance frequency can be reduced. In the resonators shown in FIGS. 27 and 28, the configuration examples of the support portions shown in the tenth to thirteenth embodiments can be applied to the configuration of the support portion 40.

  As shown in FIGS. 27 and 28, by configuring the support part 40 only on one side of the vibration part 3, the structure is simplified as compared to the structure supported from both sides, so that the manufacturing management items are reduced and it is easy to manufacture. . Further, due to the simplification of the structure, for example, design items such as a stress balance design item of the support portion 40 are reduced on the inner side and the outer side that support the vibrating portion 3, and the design is facilitated.

  Next, a configuration example of a transmission / reception circuit having an oscillator in which a resonator configured using the unit resonators according to the first to thirteenth embodiments described above is incorporated will be described with reference to FIG. .

  First, the configuration of the transmission system will be described. An I-channel transmission signal and a Q-channel transmission signal are supplied from the baseband block 230 to the multipliers 201I and 201Q, respectively. In each of the multipliers 201I and 201Q, the oscillation output of the oscillator 221 is multiplied by two signals shifted by a predetermined phase by the phase shifter 202, and the multiplied signal is mixed into one system. The mixed signal is supplied to the multiplier 205 via the variable amplifier 203 and the band pass filter 204, multiplied by the output of the oscillator 222, and frequency-converted to a transmission frequency. The output of the multiplier 205 is supplied to the antenna 210 connected to the duplexer 209 via the band pass filter 206, the variable amplifier 207, and the power amplifier 208, and is wirelessly transmitted from the antenna 210. Bandpass filters 204 and 206 remove frequency components other than the transmission signal. The duplexer 209 is a demultiplexing unit that supplies a transmission frequency signal from the transmission system to the antenna side and supplies a reception frequency signal from the antenna side to the reception system.

  As a reception system, the signal received by the antenna 210 is supplied to the low noise amplifier 211 via the duplexer 209, and the amplified output of the low noise amplifier 211 is supplied to the multiplier 213. Multiplier 213 multiplies the output of oscillator 222 and converts the signal at the reception frequency into an intermediate frequency signal. The converted intermediate frequency signal is supplied to the two multipliers 215I and 215Q via the hand pass filter 214. In each multiplier 215I and 215Q, the oscillation output of the oscillator 221 is multiplied by two signals shifted by a predetermined phase by the phase shifter 216 to obtain an I channel received signal and a Q channel received signal. The obtained I channel received signal and Q channel received signal are supplied to the baseband block 230. Bandpass filters 212 and 214 remove frequency components other than signals.

  The oscillators 221 and 222 are configured such that the oscillation frequency is controlled by the control unit 223, and configure a PLL (Phase Locked Loop) circuit. In the control unit 223, filters, comparators, and the like necessary as a PLL circuit are arranged.

  In the transmission / reception circuit shown in FIG. 29, it is possible to use a resonator formed of a unit resonator having the configuration of this example for the oscillators 221 and 222.

In this transmission / reception circuit, since a resonator having a pressure control mechanism is used, the resonance frequency can be adjusted, so that the reliability of the transmission / reception circuit can be improved.
Specific examples of the transmission / reception circuit include a transmission / reception circuit that performs communication using electromagnetic waves, such as a mobile phone, a wireless LAN device, a wireless transceiver, a television tuner, and a radio tuner.

1A and 1B are a schematic configuration diagram of a resonator to which an embodiment of the present invention is applied, and a schematic configuration diagram of a unit resonator configuring the resonator. It is a cross-sectional block diagram which follows the AA line of FIG. It is a figure which shows the principal part of a unit resonator used in order to demonstrate the principle of this invention. It is a figure which shows the outline of the change of the resonant frequency with respect to the pressure applied to a connection part. 1A and 1B are schematic cross-sectional configuration diagrams of a unit resonator according to a first embodiment of the present invention. It is a figure which shows the outline of the change of the resonant frequency with respect to the pressure applied to a connection part. A, B, and C are schematic cross-sectional configuration diagrams of a unit resonator according to a second embodiment of the present invention. It is a figure which shows the outline of the change of the resonant frequency with respect to the pressure applied to a connection part. A and B are schematic cross-sectional configuration diagrams of a unit resonator according to a third embodiment of the present invention. A and B are schematic cross-sectional configuration diagrams of a unit resonator according to a fourth embodiment of the present invention. A and B are schematic cross-sectional configuration diagrams of a unit resonator according to a fifth embodiment of the present invention. A, B, and C are schematic cross-sectional configuration diagrams of a unit resonator according to a sixth embodiment of the present invention. A and B are schematic cross-sectional configuration diagrams of a unit resonator according to a seventh embodiment of the present invention. A, B, and C are schematic cross-sectional configuration diagrams of a unit resonator according to an eighth embodiment of the present invention. A and B are schematic cross-sectional configuration diagrams of a unit resonator according to a ninth embodiment of the present invention. It is an example of an oscillator incorporating a resonator using unit resonators according to the first to ninth embodiments. It is an example of an oscillator incorporating a resonator using unit resonators according to the first to ninth embodiments. It is an example of an oscillator incorporating a resonator using unit resonators according to the first to ninth embodiments. It is a figure for demonstrating the principle that a resonant frequency reduces by A and B thermal expansion. A and B are schematic configuration diagrams of a unit resonator according to a tenth embodiment of the present invention. It is a schematic block diagram of the unit resonator in the 11th Embodiment of this invention. A and B are schematic configuration diagrams of a unit resonator according to a twelfth embodiment of the present invention. A, B It is the schematic block diagram of the unit resonator in the 13th Embodiment of this invention, and the schematic cross-sectional block diagram of a support part. It is a schematic block diagram which shows the modification of 13th Embodiment. It is a schematic block diagram which shows the modification of 13th Embodiment. It is a schematic block diagram of the other resonator which A, B 1st-13th embodiment can apply. It is a schematic block diagram of the other resonator which can apply 10th-13th embodiment. It is a schematic block diagram of the other resonator which can apply 10th-13th embodiment. It is a schematic block diagram of the transmission / reception circuit using the oscillator incorporating the resonator comprised using the unit resonator of this invention. It is a schematic block diagram of the resonator in A, B, C conventional examples.

Explanation of symbols

  1 .. Resonator, 2 .. Unit resonator, 3 .. Vibrating part, 4 a, 4 b.. Support part, 5.. Fixed part, 6 .. Substrate, 7 ... Space, 8. ..Output electrode 10,11..Wiring, 12..Connection, 13, 15, 17, 18, 19, 20, 21, 22, 24..Electrode, 14..Voltage control circuit 16, 23. -Sealing film, 26-Voltage control circuit, 27-Trimming circuit, 28-Resonator, 30-Oscillation circuit, 31-Memory, 33-Temperature sensor

Claims (17)

A substrate,
A vibrating part that resonates at a natural resonance frequency;
A support portion that supports a position that becomes a nodal region at the time of resonance in the vibration portion from one side and / or the other side of the vibration portion;
A fixing part for fixing the support part to the substrate;
A unit resonator comprising: a pressure control mechanism that controls a pressure applied to a connection portion between the vibrating portion and the support portion. The pressure control mechanism is configured to supply a desired voltage to the electrode in order to generate an electrostatic attractive force between the electrode formed on the substrate facing the fixed portion and the electrode and the fixed portion. And a control circuit,
The unit resonator according to claim 1, wherein the pressure is applied by an electrostatic attractive force generated between the electrode and the fixed portion. The pressure control mechanism includes an electrode formed on the substrate facing a nodal region at the time of resonance in the support portion and / or the resonance portion, and the electrode, the support portion, and / or the nodal region. A voltage control circuit for supplying a desired voltage to the electrodes in order to generate an electrostatic attractive force therebetween,
The unit resonator according to claim 1, wherein the pressure is applied by an electrostatic attractive force generated between the electrode and the support portion and / or the node region. The pressure control mechanism includes an electrode formed at a position opposite to the substrate, facing the nodal region at the time of resonance in the support portion and / or the resonance portion, the electrode, the support portion, and / or Or a voltage control circuit that supplies a desired voltage to the electrode in order to generate electrostatic attraction between the node region and the node region,
The unit resonator according to claim 1, wherein the pressure is applied by an electrostatic attractive force generated between the electrode and the support portion and / or the node region.   5. The electrode is formed on an upper substrate formed above the vibrating portion and the support portion and on a side opposite to the substrate through the vibration portion, the support portion, and a space. The unit resonator described. The pressure control mechanism is composed of the vibration part and the support part formed of a material having a coefficient of thermal expansion different from that of a part or all of the material used for the vibration part,
The unit resonator according to claim 1, wherein the pressure is applied due to a difference in thermal expansion coefficient between the vibrating part and the support part corresponding to the thermal expansion of the vibrating part. The vibrating part is formed of polysilicon,
The unit resonator according to claim 6, wherein a part or all of the support portion is formed of aluminum.   The unit resonator according to claim 6, wherein the support portion is rectangular.   The unit resonator according to claim 6, wherein the support portion has a bifurcated shape.   The unit resonator according to claim 6, wherein the support part has a laminated structure of materials having different coefficients of thermal expansion. A substrate, a vibration part that resonates at a specific resonance frequency, a support part that supports the vibration part from one side and / or the other side of the vibration part, and a fixing part that fixes the support part to the substrate By controlling the pressure applied to the connecting portion between the support portion and the vibrating portion of the unit resonator that is configured, the effective mass of vibration of the vibrating portion is changed, and the resonance frequency is adjusted. Adjustment method. A substrate,
A vibrating part that resonates at a natural resonance frequency;
A support part for supporting the vibration part from one side and / or the other side of the vibration part;
A fixing part for fixing the support part to the substrate;
A resonator comprising a plurality of unit resonators comprising: a pressure control mechanism for controlling a pressure applied to a connection portion between the vibrating portion and the support portion. A substrate, a vibration part that resonates at a specific resonance frequency, a support part that supports the vibration part from one side and / or the other side of the vibration part, and a fixing part that fixes the support part to the substrate An oscillation circuit configured using a resonator configured of a unit resonator that adjusts a resonance frequency by controlling a pressure applied to a connection portion between the vibration unit and the support unit. A substrate, a vibration part that resonates at a specific resonance frequency, a support part that supports a position of a nodal region at the time of resonance in the vibration part from one side and / or the other side, and the support part. A fixed portion for fixing to the substrate, an electrode formed on the substrate facing the fixed portion, and supplying a desired voltage to the electrode to generate an electrostatic attractive force between the electrode and the fixed portion And a voltage control circuit for controlling the resonance applied by a plurality of unit resonators configured to control a pressure applied to a connection portion between the vibrating portion and the support portion. And
An oscillator comprising: a trimming circuit for adjusting a voltage control range from the voltage control circuit. A substrate, a vibration part that resonates at a specific resonance frequency, a support part that supports a position of a nodal region at the time of resonance in the vibration part from one side and / or the other side, and the support part. A fixed portion for fixing to the substrate, an electrode formed on the substrate facing the fixed portion, and supplying a desired voltage to the electrode to generate an electrostatic attractive force between the electrode and the fixed portion And a voltage control circuit for controlling the resonance applied by a plurality of unit resonators configured to control a pressure applied to a connection portion between the vibrating portion and the support portion. And
A temperature sensor for supplying temperature information to the voltage control circuit;
An oscillator comprising: a memory for reading out a value of a control voltage determined by the temperature information and a resonance frequency characteristic into the voltage control circuit. A substrate, a vibration part that resonates at a specific resonance frequency, a support part that supports a position of a nodal region at the time of resonance in the vibration part from one side and / or the other side, and the support part. A fixed portion for fixing to the substrate, an electrode formed on the substrate facing the fixed portion, and supplying a desired voltage to the electrode to generate an electrostatic attractive force between the electrode and the fixed portion And a voltage control circuit for controlling the resonance applied by a plurality of unit resonators configured to control a pressure applied to a connection portion between the vibrating portion and the support portion. And
A trimming circuit for adjusting a control range of a voltage from the voltage control circuit; a temperature sensor for supplying temperature information to the voltage control circuit;
An oscillator comprising: a memory for reading out a value of a control voltage determined by the temperature information and a resonance frequency characteristic into the voltage control circuit. A vibration unit that resonates with a substrate at a specific resonance frequency, a support unit that supports the vibration unit from one side and / or the other side of the vibration unit, and a fixing unit that fixes the support unit to the substrate. A transmission / reception circuit including an oscillation circuit configured using a resonator including a unit resonator that adjusts a resonance frequency by controlling a pressure applied to a connection portion between the vibration unit and the support unit.

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