JP2009231667A - Method for processing substrate and substrate processing device - Google Patents

Method for processing substrate and substrate processing device Download PDF

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JP2009231667A
JP2009231667A JP2008077190A JP2008077190A JP2009231667A JP 2009231667 A JP2009231667 A JP 2009231667A JP 2008077190 A JP2008077190 A JP 2008077190A JP 2008077190 A JP2008077190 A JP 2008077190A JP 2009231667 A JP2009231667 A JP 2009231667A
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ultrasonic
substrate
cleaning liquid
substrates
processing tank
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Toshimitsu Funayoshi
俊充 船吉
Atsushi Tanide
敦 谷出
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for processing a substrate that improves the uniformity of cleaning effects by efficiently irradiating ultrasonic waves to an entire region of the substrate to be cleaned without complicating the structure of a substrate processing device when cleaning the substrate by irradiating the ultrasonic waves to the substrate immersed in a cleaning liquid in a processing tank. <P>SOLUTION: The ultrasonic waves are irradiated to the substrate by displacing each phase of a plurality of ultrasonic vibrator groups 22 which are parallel disposed in a direction perpendicular to an arrangement direction of the substrate (W) so that there is mutual compatibility between the transition status of flow dynamics distribution generated when the cleaning liquid supplied through a discharge pipe 20 is spread in the cleaning fluid in a processing tank 10 and the progress status of a composite wave surface formed when the ultrasonic waves irradiated from a bottom side of the processing tank 10 are propagated in the cleaning liquid in the processing tank. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

この発明は、半導体ウエハ、液晶表示装置(LCD)用ガラス基板、プラズマディスプレイ(PDP)用ガラス基板、磁気/光ディスク用のガラス/セラミック基板、電子デバイス用基板等の各種の基板を洗浄液に浸漬させながら、基板に対し処理槽の底部側から超音波を照射して基板を洗浄する基板処理方法、ならびに、その処理方法を実施するのに使用される基板処理装置に関する。   In the present invention, various substrates such as a semiconductor wafer, a glass substrate for a liquid crystal display (LCD), a glass substrate for a plasma display (PDP), a glass / ceramic substrate for a magnetic / optical disk, and an electronic device substrate are immersed in a cleaning solution. However, the present invention relates to a substrate processing method for cleaning a substrate by irradiating the substrate with ultrasonic waves from the bottom side of the processing tank, and a substrate processing apparatus used for performing the processing method.

従来、半導体ウエハ、LCD用ガラス基板等の基板の洗浄には、超音波を用いた超音波洗浄法が一般に使用されている。この超音波洗浄法は、超音波振動によって洗浄液に発生するキャビテーションや振動加速度、直進流(洗浄液の流れ)などによる効果を利用して、基板の表面に付着した粒子、有機物質、不純物等の汚れを除去する方法である。   Conventionally, an ultrasonic cleaning method using ultrasonic waves is generally used for cleaning a substrate such as a semiconductor wafer or a glass substrate for LCD. This ultrasonic cleaning method uses the effects of cavitation, vibration acceleration, straight flow (flow of cleaning liquid), etc. generated in the cleaning liquid by ultrasonic vibration, and dirt, particles, organic substances, impurities, etc. adhering to the surface of the substrate. It is a method of removing.

ところで、近年、半導体デバイスの微細化に伴って、基板の表面上に形成されたパターンの微細化が進んでいる。このような情況下において、50kHz以下といった低周波によるキャビテーションを利用した超音波洗浄では、キャビテーションに起因した物理力により、微細パターンが形成された基板の表面が損傷される、といったことが問題となる。一方、高周波による超音波洗浄では、洗浄液に発生する振動加速度による効果や直進流による効果が主として利用され、キャビテーションの発生が少ないので、除去すべき汚れの超微粒子が除去され、基板の表面のダメージが軽減される。   By the way, in recent years, with the miniaturization of semiconductor devices, the miniaturization of patterns formed on the surface of a substrate has progressed. Under such circumstances, in ultrasonic cleaning using cavitation at a low frequency of 50 kHz or less, there is a problem that the surface of the substrate on which a fine pattern is formed is damaged by physical force resulting from cavitation. . On the other hand, in ultrasonic cleaning using high frequency, the effects of vibration acceleration generated in the cleaning liquid and the effect of straight flow are mainly used, and the occurrence of cavitation is small, so the ultrafine particles of dirt to be removed are removed and the surface of the substrate is Is reduced.

バッチ式の超音波洗浄装置では、複数枚の基板を基板保持具により保持して処理槽内に固定し、処理槽内へ洗浄液を供給しながら、処理槽の底壁外面側(あるいは側壁外面側)に取り付けられた超音波振動板(振動子)から超音波を処理槽内部へ照射することにより、基板の洗浄処理が行われる。そして、上記した半導体デバイスに伴うパターンの微細化に対応するため、1MHz以上といった高周波の超音波振動が用いられる。ところが、超音波の照射のために高周波が使用されるため、処理槽の内部へ照射された超音波の直進性が強くなり、以下のような問題が出現している。   In a batch type ultrasonic cleaning apparatus, a plurality of substrates are held by a substrate holder and fixed in a processing tank, and a cleaning liquid is supplied into the processing tank, while the bottom wall outer surface side (or side wall outer surface side) of the processing tank is supplied. The substrate is cleaned by irradiating the inside of the processing tank with ultrasonic waves from an ultrasonic vibration plate (vibrator) attached to (). Then, in order to cope with the pattern miniaturization associated with the semiconductor device described above, high-frequency ultrasonic vibration of 1 MHz or higher is used. However, since high frequency is used for the irradiation of ultrasonic waves, the straightness of ultrasonic waves irradiated into the inside of the treatment tank becomes strong, and the following problems appear.

図9は、バッチ式超音波洗浄装置の概略構成の1例を示す模式的断面図である。この洗浄装置は、洗浄液を貯留する処理槽1、複数枚の半導体ウエハ等の基板Wを保持する保持部2、3を有する基板保持具(リフタ)、処理槽1の底部近傍の左右両側に配設され処理槽1の内部に向けて洗浄液を吐出する一対の吐出管4、4、処理槽1の底壁外面に処理槽1と一体的に設けられ伝播水で満たされた伝播槽5、伝播槽5の底壁外面に取り付けられた超音波振動板6、超音波振動板6に接続された超音波発振器7などから構成されている。このような構成の超音波洗浄装置において、超音波発振器7で超音波振動板6を作動させて高周波の超音波振動を発生させ、基板保持具により処理槽1内に保持された基板Wに対して高周波の超音波を照射したとき、基板保持具の保持部2、3による超音波の吸収や反射を生じる。この場合において、超音波は直進性が強いために、図9に示したように、超音波の進行方向に対して基板保持具の保持部2、3の背面側となる領域に影となる部分(超音波が十分に照射されない部分)8、9を生じる。この結果、基板Wの表面に洗浄むらが発生して、洗浄性能において基板W面内における均一性が得られない、といった問題点がある。   FIG. 9 is a schematic cross-sectional view showing an example of a schematic configuration of a batch-type ultrasonic cleaning apparatus. This cleaning apparatus is arranged on the left and right sides near the bottom of the processing tank 1, a processing tank 1 for storing cleaning liquid, a substrate holder (lifter) having holding parts 2 and 3 for holding substrates W such as a plurality of semiconductor wafers. A pair of discharge pipes 4, 4 that discharge cleaning liquid toward the inside of the treatment tank 1, a propagation tank 5 that is provided integrally with the treatment tank 1 on the outer surface of the bottom wall of the treatment tank 1, and is filled with propagation water, The ultrasonic vibration plate 6 is attached to the outer surface of the bottom wall of the tank 5, the ultrasonic oscillator 7 is connected to the ultrasonic vibration plate 6, and the like. In the ultrasonic cleaning apparatus having such a configuration, the ultrasonic vibration plate 6 is operated by the ultrasonic oscillator 7 to generate high-frequency ultrasonic vibration, and the substrate W held in the processing tank 1 by the substrate holder is applied to the substrate W. When high frequency ultrasonic waves are irradiated, the ultrasonic wave is absorbed and reflected by the holding parts 2 and 3 of the substrate holder. In this case, since the ultrasonic wave has a strong straight traveling property, as shown in FIG. 9, a portion that is shaded in a region on the back side of the holding portions 2 and 3 of the substrate holder with respect to the traveling direction of the ultrasonic wave (Part where ultrasonic waves are not sufficiently irradiated) 8 and 9 are generated. As a result, there is a problem in that cleaning unevenness occurs on the surface of the substrate W, and uniformity in the surface of the substrate W cannot be obtained in cleaning performance.

上記したような洗浄むらを防止するために、従来、種々の超音波洗浄装置や超音波洗浄方法が提案されている。例えば、複数枚のウエハを保持して洗浄槽内へ搬入する上下移動式ウエハチャックと、洗浄槽の底部に配設され上下移動式ウエハチャックから複数枚のウエハを受け取って保持する上下移動可能なリフター式ウエハガイドとを備えた超音波洗浄装置が提案されている。この洗浄装置において、洗浄第1段階では、上下移動式ウエハチャックがウエハを保持していない開いた状態とし、リフター式ウエハガイドにウエハを保持して洗浄を行う。この段階では、リフター式ウエハガイドの影になる部分に十分に超音波が照射されないために、ウエハの全面にわたる均一な洗浄効果が得られないが、洗浄第2段階では、上下移動式ウエハチャックが閉じられてウエハを保持し、この状態でウエハチャックが上昇して、ウエハの上端が洗浄槽内の洗浄液の液面から露出しない高さ位置でウエハチャックにウエハを保持して洗浄を行う。このときには、ウエハの下部とウエハガイドの水平部分(保持部)との距離が洗浄第1段階に比べて離れるため、ウエハガイドの影になる部分とウエハとが重なる領域を最小限に抑えることができる。これにより、ウエハの全域を洗浄することが可能となる(例えば、特許文献1参照。)。
特開2006−324495号公報(第4−5頁、図3−図5)
In order to prevent the above-described cleaning unevenness, various ultrasonic cleaning apparatuses and ultrasonic cleaning methods have been conventionally proposed. For example, a vertically movable wafer chuck that holds a plurality of wafers and carries them into the cleaning tank, and a vertically movable wafer that is disposed at the bottom of the cleaning tank and receives and holds a plurality of wafers from the vertically movable wafer chuck. An ultrasonic cleaning apparatus including a lifter type wafer guide has been proposed. In this cleaning apparatus, in the first cleaning stage, the wafer moving up and down is held in an open state where the wafer is not held, and the wafer is held by the lifter type wafer guide for cleaning. At this stage, since the ultrasonic wave is not sufficiently applied to the shadowed portion of the lifter type wafer guide, a uniform cleaning effect over the entire surface of the wafer cannot be obtained. However, in the second cleaning stage, the vertically movable wafer chuck is The wafer is closed and held, and the wafer chuck is raised in this state, and cleaning is performed by holding the wafer on the wafer chuck at a height position where the upper end of the wafer is not exposed from the surface of the cleaning liquid in the cleaning tank. At this time, since the distance between the lower portion of the wafer and the horizontal portion (holding portion) of the wafer guide is larger than that in the first cleaning step, it is possible to minimize the region where the portion that is shaded by the wafer guide and the wafer overlap. it can. As a result, the entire area of the wafer can be cleaned (see, for example, Patent Document 1).
Japanese Patent Laying-Open No. 2006-324495 (page 4-5, FIGS. 3 to 5)

特許文献1で提案されている超音波洗浄装置の構成によると、ウエハガイドの影になる領域にも超音波を照射することが可能となるが、それによる効果には限界があり、超音波が照射されない部分を完全に無くすことはできない。また、超音波洗浄装置の構造が複雑化する、といった問題点もある。   According to the configuration of the ultrasonic cleaning apparatus proposed in Patent Document 1, it is possible to irradiate an ultrasonic wave to the shadowed area of the wafer guide. The part that is not irradiated cannot be completely eliminated. Another problem is that the structure of the ultrasonic cleaning apparatus is complicated.

この発明は、以上のような事情に鑑みてなされたものであり、処理槽内の洗浄液に浸漬された基板に対し超音波を照射して基板を洗浄する場合において、装置の構造を複雑化させることなく、基板の洗浄面全域に効果的に超音波を照射して、洗浄効果の均一性を高めることができる基板処理方法を提供すること、ならびに、その処理方法を好適に実施することができる基板処理装置を提供することを目的とする。   The present invention has been made in view of the circumstances as described above, and complicates the structure of the apparatus when the substrate is immersed in the cleaning liquid in the processing tank to clean the substrate by irradiating ultrasonic waves. It is possible to provide a substrate processing method capable of effectively irradiating the entire cleaning surface of the substrate with ultrasonic waves to enhance the uniformity of the cleaning effect, and to suitably execute the processing method. An object is to provide a substrate processing apparatus.

複数枚の基板を基板保持手段により鉛直姿勢で互いに平行にかつ水平方向に配列して処理槽内に保持した状態で、処理槽の底部近傍に複数の基板の配列方向に沿って配設された洗浄液供給手段から処理槽の内部に向けて洗浄液を供給したとき、洗浄液供給手段から供給された洗浄液は、処理槽内の洗浄液中に拡散して処理槽内を流動する。また、基板保持手段に保持された複数の基板に対し、処理槽の底部側に複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子からから超音波を照射したとき、個々の超音波振動子群もしくは超音波振動子からそれぞれ照射される超音波は、合成されて処理槽内の洗浄液中を伝播していく。請求項1に係る発明は、複数の基板の配列方向と直交する断面で見たときに、洗浄液が処理槽内の洗浄液中に拡散していくときの流動分布の推移状況と、超音波が処理槽内の洗浄液を伝播していくときの合成波面の進行状況とが相互に適合するように、複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ照射される超音波の位相を相互にずらすことを特徴とする。   A plurality of substrates are arranged along the arrangement direction of the plurality of substrates in the vicinity of the bottom of the processing tank in a state in which the plurality of substrates are arranged in parallel and horizontally in the vertical posture by the substrate holding means and held in the processing tank. When the cleaning liquid is supplied from the cleaning liquid supply means toward the inside of the processing tank, the cleaning liquid supplied from the cleaning liquid supply means diffuses into the cleaning liquid in the processing tank and flows in the processing tank. In addition, a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged side by side in a direction orthogonal to the arrangement direction of the plurality of substrates on the bottom side of the processing tank with respect to the plurality of substrates held by the substrate holding means When the ultrasonic waves are irradiated from the ultrasonic wave, the ultrasonic waves irradiated from the individual ultrasonic transducer groups or the ultrasonic transducers are synthesized and propagated through the cleaning liquid in the treatment tank. According to the first aspect of the present invention, when viewed in a cross section orthogonal to the arrangement direction of a plurality of substrates, the flow distribution transition state when the cleaning liquid diffuses into the cleaning liquid in the processing tank and the ultrasonic wave are processed. The phases of the ultrasonic waves radiated from multiple ultrasonic transducer groups or multiple ultrasonic transducers are mutually matched so that the progress of the composite wavefront when propagating the cleaning liquid in the tank is compatible with each other. It is characterized by shifting.

請求項2に係る発明は、請求項1に記載の基板処理方法において、処理槽の底部近傍の両側に左右対称に配設された一対の洗浄液供給手段から洗浄液をそれぞれ左右対称にかつ処理槽内部の中央方向に向けて斜め下向きに供給し、左右対称に並設された複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ照射される超音波の位相を、左右対称位置にある超音波振動子群同士もしくは超音波振動子同士で一致させ、かつ、複数の基板の配列方向と直交する方向における中央位置にある超音波振動子群もしくは超音波振動子に対しそれから遠ざかる位置にある超音波振動子群もしくは超音波振動子ほど順次遅らせることを特徴とする。   According to a second aspect of the present invention, there is provided the substrate processing method according to the first aspect, wherein the cleaning liquid is symmetrically provided in a left-right direction from a pair of cleaning liquid supply means disposed symmetrically on both sides near the bottom of the processing tank. The phases of the ultrasonic waves respectively supplied from a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged side by side in a symmetrical manner are The ultrasonic transducer group or the ultrasonic transducers are matched with each other, and the ultrasonic transducer group or the ultrasonic transducer at the center position in the direction orthogonal to the arrangement direction of the plurality of substrates is located away from the ultrasonic transducer group. The ultrasonic transducer group or the ultrasonic transducer is sequentially delayed.

請求項3に係る発明は、複数枚の基板を基板保持手段により鉛直姿勢で互いに平行にかつ水平方向に配列して処理槽内に保持した状態で、処理槽の底部近傍に複数の基板の配列方向に沿って配設された洗浄液供給手段から処理槽の内部に向けて洗浄液を供給しながら、基板保持手段に保持された複数の基板に対し処理槽の底部側から超音波を照射して、複数の基板を洗浄する方法において、前記複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を遅らせて照射する第1の工程と、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を進めて照射する第2の工程と、を含むことを特徴とする。   The invention according to claim 3 is the arrangement of a plurality of substrates in the vicinity of the bottom of the processing tank in a state where a plurality of substrates are held in the processing tank in a vertical posture parallel to each other and horizontally by the substrate holding means. While supplying the cleaning liquid from the cleaning liquid supply means arranged along the direction toward the inside of the processing tank, the plurality of substrates held by the substrate holding means are irradiated with ultrasonic waves from the bottom side of the processing tank, In the method for cleaning a plurality of substrates, ultrasonic waves are respectively emitted from a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged in parallel in a direction orthogonal to the arrangement direction of the plurality of substrates. Alternatively, the first step of irradiating the phase sequentially in accordance with the arrangement order of the ultrasonic transducers and the ultrasonic waves from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers, respectively. Arrangement of acoustic transducer A second step of irradiating complete the sequence phase according order, characterized in that it comprises a.

請求項4に係る発明は、請求項3に記載の基板処理方法において、前記第1の工程と前記第2の工程とを交互に繰り返すことを特徴とする。   The invention according to claim 4 is the substrate processing method according to claim 3, characterized in that the first step and the second step are alternately repeated.

請求項5に係る発明は、請求項3に記載の基板処理方法において、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を同一位相で照射する第3の工程をさらに含むことを特徴とする。   The invention according to claim 5 is the substrate processing method according to claim 3, further comprising a third step of irradiating ultrasonic waves from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers in the same phase. It is characterized by including.

請求項6に係る発明は、請求項5に記載の基板処理方法において、前記第1の工程と前記第2の工程とを、前記第3の工程を介在させて交互に繰り返すことを特徴とする。   The invention according to claim 6 is the substrate processing method according to claim 5, wherein the first step and the second step are alternately repeated with the third step interposed therebetween. .

請求項7に係る発明は、洗浄液を貯留する処理槽と、複数の基板を、その各下端部を保持部により支持して鉛直姿勢で互いに平行にかつ水平方向に配列させた状態で前記処理槽の内部に保持する基板保持手段と、前記処理槽の底部近傍に、前記基板保持手段に保持される複数の基板の配列方向に沿って配設され、前記処理槽の内部に向けて洗浄液を吐出する洗浄液供給手段と、前記基板保持手段に保持された複数の基板に対し前記処理槽の底部側から超音波を照射する超音波照射手段と、を備え、前記基板保持手段に保持された複数の基板を洗浄する基板処理装置において、前記複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子と、前記複数の超音波振動子群もしくは複数の超音波振動子に接続された超音波発振器と、前記処理液供給手段から供給された洗浄液が前記処理槽内の洗浄液中に拡散していくときの、前記複数の基板の配列方向と直交する断面内における流動分布の推移状況と、前記処理槽の底部側から照射された超音波が処理槽内の洗浄液中を伝播していくときの、前記複数の基板の配列方向と直交する断面内における合成波面の進行とが相互に適合するように、前記超音波発振器から前記複数の超音波振動子群もしくは複数の超音波振動子へそれぞれ送られる発振波の位相をずらすように制御する制御回路と、を備えることを特徴とする。   The invention according to claim 7 is the processing tank in which the cleaning liquid is stored and the plurality of substrates are supported in a vertical posture with the lower end portions thereof supported by the holding portions and arranged in parallel and in the horizontal direction. A substrate holding means for holding inside the substrate, and disposed in the vicinity of the bottom of the processing tank along the arrangement direction of the plurality of substrates held by the substrate holding means, and discharging a cleaning liquid toward the inside of the processing tank Cleaning liquid supply means, and ultrasonic irradiation means for irradiating ultrasonic waves from the bottom side of the processing tank to the plurality of substrates held by the substrate holding means, and a plurality of holding means held by the substrate holding means In a substrate processing apparatus for cleaning a substrate, a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged in parallel in a direction orthogonal to the arrangement direction of the plurality of substrates, and the plurality of ultrasonic transducer groups or Multiple ultrasonic transducers The flow distribution in a cross section perpendicular to the arrangement direction of the plurality of substrates when the cleaning liquid supplied from the connected ultrasonic oscillator and the processing liquid supply means diffuses into the cleaning liquid in the processing tank. The transition state and the progress of the composite wavefront in the cross section perpendicular to the arrangement direction of the plurality of substrates when the ultrasonic wave irradiated from the bottom side of the processing tank propagates through the cleaning liquid in the processing tank. A control circuit that controls to shift the phases of the oscillating waves respectively sent from the ultrasonic oscillator to the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers so as to be compatible with each other. And

請求項8に係る発明は、請求項7に記載の基板処理装置において、前記洗浄液供給手段が前記処理槽の底部近傍の両側に左右対称に一対設けられて、その一対の洗浄液供給手段から洗浄液がそれぞれ左右対称にかつ処理槽内部の中央方向に向けて斜め下向きに供給されるようにし、前記複数の超音波振動子群もしくは複数の超音波振動子が左右対称に配置され、前記制御回路により、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ照射される超音波の位相を、左右対称位置にある超音波振動子群同士もしくは超音波振動子同士で一致させ、かつ、前記複数の基板の配列方向と直交する方向における中央位置にある超音波振動子群もしくは超音波振動子に対しそれから遠ざかる位置にある超音波振動子群もしくは超音波振動子ほど順次遅らせるように制御することを特徴とする。   According to an eighth aspect of the present invention, in the substrate processing apparatus of the seventh aspect, a pair of the cleaning liquid supply means is provided symmetrically on both sides near the bottom of the processing tank, and the cleaning liquid is supplied from the pair of cleaning liquid supply means. Each of the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers is arranged symmetrically so as to be supplied symmetrically and obliquely downward toward the central direction inside the processing tank, and the control circuit, The phases of the ultrasonic waves respectively irradiated from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers are matched between the ultrasonic transducer groups or the ultrasonic transducers at the left and right symmetrical positions, and The ultrasonic transducer group or ultrasonic transducer at a position far from the ultrasonic transducer group or ultrasonic transducer at the central position in the direction orthogonal to the arrangement direction of the plurality of substrates And controlling to delay sequentially as children.

請求項9に係る発明は、洗浄液を貯留する処理槽と、複数の基板を、その各下端部を保持部により支持して鉛直姿勢で互いに平行にかつ水平方向に配列させた状態で前記処理槽の内部に保持する基板保持手段と、前記処理槽の底部近傍に、前記基板保持手段に保持される複数の基板の配列方向に沿って配設され、前記処理槽の内部に向けて洗浄液を吐出する洗浄液供給手段と、前記基板保持手段に保持された複数の基板に対し前記処理槽の底部側から超音波を照射する超音波照射手段と、を備え、前記基板保持手段に保持された複数の基板を洗浄する基板処理装置において、前記複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子と、前記複数の超音波振動子群もしくは複数の超音波振動子に接続された超音波発振器と、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を遅らせて照射する第1の状態と、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を進めて照射する第2の状態とを切り替えるように制御する制御回路と、を備えることを特徴とする。   According to the ninth aspect of the present invention, there is provided a processing tank for storing a cleaning liquid and a plurality of substrates in a state where the lower ends thereof are supported by a holding part and arranged in parallel and horizontally in a vertical posture. A substrate holding means for holding inside the substrate, and disposed in the vicinity of the bottom of the processing tank along the arrangement direction of the plurality of substrates held by the substrate holding means, and discharging a cleaning liquid toward the inside of the processing tank Cleaning liquid supply means, and ultrasonic irradiation means for irradiating ultrasonic waves from the bottom side of the processing tank to the plurality of substrates held by the substrate holding means, and a plurality of holding means held by the substrate holding means In a substrate processing apparatus for cleaning a substrate, a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged in parallel in a direction orthogonal to the arrangement direction of the plurality of substrates, and the plurality of ultrasonic transducer groups or Multiple ultrasonic transducers Ultrasonic waves are emitted from the connected ultrasonic oscillator and the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers, respectively, with the phase sequentially delayed in accordance with the arrangement order of the ultrasonic transducer groups or ultrasonic transducers. A first state and a second state in which ultrasonic waves are respectively emitted from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers while sequentially proceeding in phase according to the arrangement order of the ultrasonic transducer groups or the ultrasonic transducers. And a control circuit that controls to switch between these states.

請求項10に係る発明は、請求項9に記載の基板処理装置において、前記制御回路により、前記第1の状態と前記第2の状態とが交互に繰り返されるように制御することを特徴とする。   According to a tenth aspect of the present invention, in the substrate processing apparatus according to the ninth aspect, the control circuit controls the first state and the second state to be alternately repeated. .

請求項11に係る発明は、請求項9に記載の基板処理装置において、前記制御回路により、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を同一位相で照射する第3の状態と前記第1の状態と前記第2の状態とを択一的に切り替えるように制御することを特徴とする。   According to an eleventh aspect of the present invention, in the substrate processing apparatus according to the ninth aspect, the control circuit irradiates ultrasonic waves from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers in the same phase. 3, the first state, and the second state are controlled to be switched alternatively.

請求項12に係る発明は、請求項11に記載の基板処理装置において、前記制御回路により、前記第1の状態と前記第2の状態とが、前記第3の状態を介在させて交互に繰り返されるように制御することを特徴とする。   According to a twelfth aspect of the present invention, in the substrate processing apparatus of the eleventh aspect, the first state and the second state are alternately repeated by the control circuit with the third state interposed therebetween. It is controlled to be controlled.

請求項13に係る発明は、請求項7ないし請求項12のいずれかに記載の基板処理装置において、前記超音波発振器は、パルス波を発振するパルス発振器であることを特徴とする。   According to a thirteenth aspect of the present invention, in the substrate processing apparatus according to any one of the seventh to twelfth aspects, the ultrasonic oscillator is a pulse oscillator that oscillates a pulse wave.

請求項14に係る発明は、請求項7ないし請求項13のいずれかに記載の基板処理装置において、前記制御回路は、前記超音波発振器と前記複数の超音波振動子群もしくは複数の超音波振動子との間にそれぞれ介挿された複数の遅延回路を含むことを特徴とする。   The invention according to claim 14 is the substrate processing apparatus according to any one of claims 7 to 13, wherein the control circuit includes the ultrasonic oscillator and the plurality of ultrasonic transducer groups or a plurality of ultrasonic vibrations. It includes a plurality of delay circuits respectively inserted between the children.

請求項1に係る発明の基板処理方法によると、複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ位相をずらして超音波が照射されるので、個々の超音波振動子群もしくは超音波振動子からそれぞれ照射される超音波が合成された合成波面は、単なる水平面ではなく湾曲面をなす形で処理槽内の洗浄液中を上向きに進行していく。このため、超音波は見掛け上、処理槽内部の位置によって鉛直方向に対し傾斜した方向に伝播していく。この結果、超音波の進行方向に対して基板保持手段の保持部の背面側に影となる部分(超音波が十分に照射されない部分)を生じることが最小限に抑えられる。
したがって、請求項1に係る発明の基板処理方法を用いて基板の超音波洗浄を行うときは、基板の洗浄面全域に効果的に超音波を照射して、洗浄効果の均一性を高めることができる。また、処理槽の底部側に複数の超音波振動子群もしくは複数の超音波振動子を並設し、それらから照射される超音波の位相をずらすだけであるので、装置の構造が複雑化することもない。さらに、処理槽内の洗浄液中において洗浄液の流動分布の推移状況に合わせるように超音波の合成波面が進行していくため、基板の洗浄効果を高めることができる。
According to the substrate processing method of the first aspect of the present invention, the ultrasonic waves are irradiated from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers with the phases shifted from each other. The combined wavefronts obtained by synthesizing the ultrasonic waves respectively irradiated from the acoustic wave transducers progress upward in the cleaning liquid in the processing tank in a curved surface rather than a mere horizontal plane. For this reason, the ultrasonic wave apparently propagates in a direction inclined with respect to the vertical direction depending on the position inside the processing tank. As a result, it is possible to minimize occurrence of a shadowed portion (portion where ultrasonic waves are not sufficiently irradiated) on the back side of the holding portion of the substrate holding means with respect to the traveling direction of the ultrasonic waves.
Therefore, when performing ultrasonic cleaning of a substrate using the substrate processing method according to the first aspect of the present invention, it is possible to effectively irradiate the entire cleaning surface of the substrate with ultrasonic waves to improve the uniformity of the cleaning effect. it can. In addition, since a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers are arranged in parallel on the bottom side of the processing tank and the phase of the ultrasonic wave irradiated from them is simply shifted, the structure of the apparatus becomes complicated. There is nothing. Furthermore, since the synthetic wavefront of the ultrasonic wave advances so as to match the transition state of the flow distribution of the cleaning liquid in the cleaning liquid in the processing tank, the substrate cleaning effect can be enhanced.

請求項2に係る発明の基板処理方法によると、処理槽の底部近傍の両側に配設された一対の洗浄液供給手段からそれぞれ処理槽内部の中央方向に向けて斜め下向きに供給された洗浄液は、処理槽の底部から上部に向かって左右対称的に上昇する。このときの上昇流は、処理槽の中央部ではほぼ直線状であるが、処理槽の中央から左右両側に向かうに従って外向きに大きく湾曲するようになる。一方、処理槽の底部側に左右対称に並設された複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ照射される個々の超音波の進行は、処理槽の中央部に比べて左右両側に向かうほど遅れる。このため、個々の超音波が合成された合成波面は、下側に開いた円弧状となり、処理槽内における洗浄液の流動分布の推移状況と同様に上向きに進行していく。したがって、請求項1に係る発明の上記効果を確実に奏することができる。   According to the substrate processing method of the invention according to claim 2, the cleaning liquid supplied obliquely downward from the pair of cleaning liquid supply means disposed on both sides near the bottom of the processing tank toward the central direction inside the processing tank, It rises symmetrically from the bottom to the top of the treatment tank. The upward flow at this time is substantially linear at the center of the processing tank, but greatly curves outward as it goes from the center of the processing tank to the left and right sides. On the other hand, the progress of individual ultrasonic waves respectively irradiated from a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged side by side symmetrically on the bottom side of the processing tank is compared to the central portion of the processing tank. The more you move to the left and right sides, the more you delay. For this reason, the synthesized wavefront obtained by synthesizing the individual ultrasonic waves has an arc shape opened downward, and proceeds upward in the same manner as the flow distribution of the cleaning liquid in the processing tank. Therefore, the above-mentioned effect of the invention according to claim 1 can be reliably achieved.

請求項3に係る発明の基板処理方法によると、第1の工程において、複数の超音波振動子群もしくは複数の超音波振動子から、その配列順に従い順次位相を遅らせて超音波が照射されるので、個々の超音波振動子群もしくは超音波振動子からそれぞれ照射される超音波が合成された合成波面は、見掛け上、複数の基板の配列方向と直交する方向において水平面に対し傾斜した形で処理槽内の洗浄液中を伝播していく。一方、第2の工程において、複数の超音波振動子群もしくは複数の超音波振動子から、その配列順に従い順次位相を進めて超音波が照射されるので、個々の超音波振動子群もしくは超音波振動子からそれぞれ照射される超音波が合成された合成波面は、見掛け上、複数の基板の配列方向と直交する方向において水平面に対し前記とは反対側に傾斜した形で処理槽内の洗浄液中を伝播していく。このように、超音波の合成波面の進行方向が変化するため、超音波の進行方向に対して基板保持手段の保持部の背面側に生じる影となる部分(超音波が十分に照射されない部分)が変化し、その結果として、複数の基板の配列方向と直交する断面で見たときに常に影となる部分の面積が小さくなる。
したがって、請求項3に係る発明の基板処理方法を用いて基板の超音波洗浄を行うときは、基板の洗浄面全域に効果的に超音波を照射して、洗浄効果の均一性を高めることができる。また、処理槽の底部側に複数の超音波振動子群もしくは複数の超音波振動子を並設し、それらから照射される超音波の位相を遅らせたり進めたりするだけであるので、装置の構造が複雑化することもない。
According to the substrate processing method of the invention of claim 3, in the first step, the ultrasonic waves are irradiated from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers with the phase being sequentially delayed according to the arrangement order. Therefore, the combined wavefront obtained by synthesizing the ultrasonic waves respectively irradiated from the individual ultrasonic transducer groups or the ultrasonic transducers is apparently inclined with respect to the horizontal plane in the direction orthogonal to the arrangement direction of the plurality of substrates. It propagates through the cleaning liquid in the treatment tank. On the other hand, in the second step, ultrasonic waves are emitted from a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers with the phase being sequentially advanced according to the arrangement order. The combined wavefront obtained by synthesizing the ultrasonic waves respectively irradiated from the acoustic wave oscillator is apparently inclined in the direction perpendicular to the arrangement direction of the plurality of substrates in a direction inclined to the opposite side with respect to the horizontal plane. Propagate through. As described above, since the traveling direction of the composite wavefront of the ultrasonic wave changes, a shadowed portion on the back side of the holding unit of the substrate holding unit with respect to the traveling direction of the ultrasonic wave (a portion where the ultrasonic wave is not sufficiently irradiated) As a result, the area of a portion that always becomes a shadow when viewed in a cross section orthogonal to the arrangement direction of the plurality of substrates is reduced.
Therefore, when performing ultrasonic cleaning of a substrate using the substrate processing method of the invention according to claim 3, it is possible to effectively irradiate the entire cleaning surface of the substrate with ultrasonic waves to improve the uniformity of the cleaning effect. it can. In addition, since a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers are arranged in parallel on the bottom side of the processing tank, and only the phase of the ultrasonic wave irradiated from them is delayed or advanced, the structure of the apparatus There is no complication.

請求項4に係る発明の基板処理方法では、第1の工程と第2の工程とが交互に繰り返されることにより、請求項3に係る発明の上記効果が確実に得られる。   In the substrate processing method according to the fourth aspect of the present invention, the first and second steps are alternately repeated, so that the above-described effect of the third aspect of the invention can be reliably obtained.

請求項5に係る発明の基板処理方法によると、第3の工程において、複数の超音波振動子群もしくは複数の超音波振動子から、それぞれ同一位相で超音波が照射されるので、個々の超音波振動子群もしくは超音波振動子からそれぞれ照射される超音波が合成された合成波面は、水平面をなす形で処理槽内の洗浄液中を上向きに進行していく。この第3の工程を含むことにより、複数の基板の配列方向と直交する断面で見たときに常に影となる部分の面積がより小さくなる、したがって、請求項5に係る発明の基板処理方法を用いると、洗浄効果の均一性をより高めることができる。   According to the substrate processing method of the invention of claim 5, in the third step, since the ultrasonic waves are irradiated with the same phase from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers, A combined wavefront obtained by synthesizing ultrasonic waves respectively emitted from the group of ultrasonic transducers or ultrasonic transducers travels upward in the cleaning liquid in the processing tank in a horizontal plane. By including this third step, the area of the portion that is always shadowed when viewed in a cross section orthogonal to the arrangement direction of the plurality of substrates is further reduced. Therefore, the substrate processing method of the invention according to claim 5 is provided. When used, the uniformity of the cleaning effect can be further increased.

請求項6に係る発明は、第1の工程と記第2の工程とが、第3の工程を介在させて交互に繰り返されることにより、請求項5に係る発明の上記効果が確実に得られる。   In the invention according to claim 6, the above-described effect of the invention according to claim 5 can be reliably obtained by alternately repeating the first step and the second step with the third step interposed. .

請求項7に係る発明の基板処理装置を基板の超音波洗浄に使用すると、請求項1に係る発明の方法を好適に実施することができるので、請求項1に係る発明の上記効果を得ることができる。   When the substrate processing apparatus of the invention according to claim 7 is used for ultrasonic cleaning of a substrate, the method of the invention according to claim 1 can be suitably carried out, so that the above effect of the invention according to claim 1 is obtained. Can do.

請求項8に係る発明の基板処理装置を使用すると、請求項2に係る発明の方法を好適に実施することができるので、請求項2に係る発明の上記効果を得ることができる。   When the substrate processing apparatus of the invention according to claim 8 is used, the method of the invention according to claim 2 can be suitably implemented, so that the above-described effect of the invention according to claim 2 can be obtained.

請求項9に係る発明の基板処理装置を基板の超音波洗浄に使用すると、請求項3に係る発明の方法を好適に実施することができるので、請求項3に係る発明の上記効果を得ることができる。   When the substrate processing apparatus of the invention according to claim 9 is used for ultrasonic cleaning of a substrate, the method of the invention according to claim 3 can be suitably carried out, so that the effect of the invention according to claim 3 is obtained. Can do.

請求項10に係る発明の基板処理装置を使用すると、請求項4に係る発明の方法を好適に実施することができるので、請求項4に係る発明の上記効果を得ることができる。   When the substrate processing apparatus of the invention according to claim 10 is used, the method of the invention according to claim 4 can be suitably carried out, so that the effect of the invention according to claim 4 can be obtained.

請求項11に係る発明の基板処理装置を使用すると、請求項5に係る発明の方法を好適に実施することができるので、請求項5に係る発明の上記効果を得ることができる。   When the substrate processing apparatus of the invention according to claim 11 is used, the method of the invention according to claim 5 can be suitably carried out, so that the effect of the invention of claim 5 can be obtained.

請求項12に係る発明の基板処理装置を使用すると、請求項6に係る発明の方法を好適に実施することができるので、請求項6に係る発明の上記効果を得ることができる。   When the substrate processing apparatus according to the twelfth aspect of the invention is used, the method of the invention of the sixth aspect of the invention can be suitably carried out, so that the effect of the invention according to the sixth aspect can be obtained.

請求項13に係る発明の基板処理装置では、パルス発振器からパルス波を発振することにより、請求項7ないし請求項12に係る発明の効果を確実に奏することができる。   In the substrate processing apparatus of the invention according to the thirteenth aspect, the effects of the inventions according to the seventh to twelfth aspects can be reliably achieved by oscillating the pulse wave from the pulse oscillator.

請求項14に係る発明の基板処理装置では、超音波発振器と複数の超音波振動子群もしくは複数の超音波振動子との間にそれぞれ介挿された複数の遅延回路により、複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ照射される超音波の位相をずらしたり順次遅らせたり進めたりすることにより、請求項7ないし請求項12に係る発明の効果を確実に奏することができる。   In the substrate processing apparatus of the invention according to claim 14, a plurality of ultrasonic vibrations are provided by a plurality of delay circuits respectively inserted between the ultrasonic oscillator and the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers. The effects of the inventions according to the seventh to twelfth aspects can be reliably achieved by shifting, sequentially delaying, or advancing the phase of the ultrasonic waves respectively irradiated from the child group or the plurality of ultrasonic transducers.

以下、この発明の最良の実施形態について図面を参照しながら説明する。
図1は、この発明の実施形態の1例を示し、基板を超音波洗浄する基板処理装置の概略構成を示す模式的断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic cross-sectional view showing a schematic configuration of a substrate processing apparatus for ultrasonically cleaning a substrate, showing an example of an embodiment of the present invention.

この基板処理装置は、上面が開口し洗浄液を貯留する処理槽10、および、複数枚の半導体ウエハ等の基板Wを保持する基板保持具(リフタ)を備えている。処理槽10の上部外周には、処理槽10の上端口から溢れ出た処理液が流入する液受け部12が設けられており、処理槽10の底壁外面に処理槽10と一体的に、純水等の伝播水で満たされた伝播槽14が設けられている。基板保持具は、その構造の詳しい説明を省略するが、鉛直方向に配設されたリフタ部(図示せず)、ならびに、このリフタ部の下端部分にそれぞれ取着され基板Wの下端部を支持する中央保持部16および左・右保持部18、18を有している。各保持部16、18には、基板Wの周縁部と係合する複数の基板保持溝がそれぞれ形設されている。そして、複数枚の基板Wは、基板保持具により鉛直姿勢で互いに平行に僅かな間隔をあけて水平方向に配列された状態で保持され、処理槽10の内部へ挿入されて処理槽10内の洗浄液中に浸漬させられ、また、処理槽10内の洗浄液中から引き上げられて処理槽10の上方位置へ排出される。   The substrate processing apparatus includes a processing tank 10 having an upper surface opened and storing a cleaning liquid, and a substrate holder (lifter) that holds a plurality of substrates W such as semiconductor wafers. A liquid receiving portion 12 into which the processing liquid overflowing from the upper end of the processing tank 10 flows is provided on the outer periphery of the upper part of the processing tank 10, and integrally with the processing tank 10 on the outer surface of the bottom wall of the processing tank 10, A propagation tank 14 filled with propagation water such as pure water is provided. Although detailed description of the structure of the substrate holder is omitted, a lifter portion (not shown) arranged in the vertical direction and a lower end portion of the lifter portion are attached to the lower end portion of the substrate W, respectively. A central holding portion 16 and left and right holding portions 18, 18. Each holding portion 16, 18 is formed with a plurality of substrate holding grooves that engage with the peripheral edge of the substrate W. Then, the plurality of substrates W are held in a vertical posture by the substrate holder in a state of being arranged in the horizontal direction with a slight gap therebetween, inserted into the processing bath 10 and stored in the processing bath 10. It is immersed in the cleaning liquid, and is pulled up from the cleaning liquid in the processing tank 10 and discharged to a position above the processing tank 10.

処理槽10の底部近傍の左右両側には、洗浄液を吐出する一対の吐出管20、20が設けられている。各吐出管20は、基板保持具に保持される複数枚の基板Wの配列方向に沿って(紙面に対して垂直方向に)延びるようにそれぞれ配設されている。吐出管20には、その軸線方向に沿って、例えば複数のスリット状の吐出口が直線上に配列して形成されている。そして、一対の吐出管20、20の吐出口から処理槽10の内部へ、それぞれ処理槽10内部の中央方向に向けて斜め下向きに洗浄液が供給される。   A pair of discharge pipes 20 and 20 for discharging the cleaning liquid are provided on the left and right sides near the bottom of the processing tank 10. Each discharge tube 20 is disposed so as to extend along the arrangement direction of the plurality of substrates W held by the substrate holder (in a direction perpendicular to the paper surface). For example, a plurality of slit-shaped discharge ports are arranged in a straight line along the axial direction of the discharge pipe 20. Then, the cleaning liquid is supplied obliquely downward from the discharge ports of the pair of discharge pipes 20 and 20 to the inside of the processing tank 10 toward the central direction inside the processing tank 10.

処理槽10の底壁外面に設けられた伝播槽14の底壁外面には、複数の超音波振動板(超音波振動子)22が取り付けられている。超音波振動板22は、図2に斜視図を、図3にブロック図をそれぞれ示すように、基板Wの配列方向に沿って一列に複数個、図示例では8個連設されるとともに、その8個の超音波振動板22が基板Wの配列方向と直交する方向に複数列、図示例では8列並設されている。そして、基板Wの配列方向に沿って一列に連設された8個の超音波振動板22がそれぞれ一群とされて、8つの超音波振動子群22a〜22hを構成し、各超音波振動子群22a〜22hごとに別々の遅延回路24を介在させて、全ての超音波振動板22が1つの超音波発振器26に接続されている。なお、図3には、1つの超音波振動子群22aに属する8個の超音波振動板22が遅延回路24aを介在して超音波発振器26に接続された構成だけを示しているが、他の超音波振動子群22b〜22hも同様に、それぞれ遅延回路24を介在させて超音波発振器26に接続されている。超音波発振器26としては、パルス波を発振するパルス発振器が使用される。そして、超音波発振器26から高周波、例えば1MHz以上の周波数の振動子駆動用発振信号が出力されて、超音波振動板22が高周波振動することにより、超音波振動板22で超音波振動が発生する。なお、この実施形態では、基板Wの配列方向に沿って一列に連設された8個の超音波振動板22を一群とし、遅延回路24を介在させて超音波発振器26に接続しているが、超音波振動子群22a〜22hを、基板Wの配列方向に沿って延びる1本の超音波振動板に代えるようにしてもよい。   A plurality of ultrasonic vibration plates (ultrasonic transducers) 22 are attached to the bottom wall outer surface of the propagation tank 14 provided on the bottom wall outer surface of the processing tank 10. As shown in a perspective view in FIG. 2 and a block diagram in FIG. 3, a plurality of ultrasonic diaphragms 22 are arranged in a line along the direction of arrangement of the substrates W, and eight in the illustrated example, Eight ultrasonic diaphragms 22 are arranged in a plurality of rows in the direction orthogonal to the arrangement direction of the substrates W, in the illustrated example, eight rows. Then, eight ultrasonic vibration plates 22 arranged in a line along the arrangement direction of the substrates W are grouped together to form eight ultrasonic transducer groups 22a to 22h, and each ultrasonic transducer is formed. All the ultrasonic diaphragms 22 are connected to one ultrasonic oscillator 26 through a separate delay circuit 24 for each of the groups 22a to 22h. FIG. 3 shows only a configuration in which eight ultrasonic diaphragms 22 belonging to one ultrasonic transducer group 22a are connected to the ultrasonic oscillator 26 via a delay circuit 24a. Similarly, the ultrasonic transducer groups 22b to 22h are connected to the ultrasonic oscillator 26 via the delay circuit 24, respectively. As the ultrasonic oscillator 26, a pulse oscillator that oscillates a pulse wave is used. Then, a vibrator driving oscillation signal having a high frequency, for example, a frequency of 1 MHz or higher is output from the ultrasonic oscillator 26, and the ultrasonic vibration plate 22 vibrates at a high frequency, whereby ultrasonic vibration is generated in the ultrasonic vibration plate 22. . In this embodiment, eight ultrasonic diaphragms 22 arranged in a line along the arrangement direction of the substrates W are grouped and connected to the ultrasonic oscillator 26 via a delay circuit 24. The ultrasonic transducer groups 22a to 22h may be replaced with one ultrasonic diaphragm extending along the arrangement direction of the substrates W.

次に、上記した超音波振動子群22a〜22hの制御例について説明する。
図4は、超音波振動子群22a〜22hから処理槽10内部へ照射される超音波a〜hの振動波形をそれぞれ示す図である。超音波振動子群22a〜22hに対し超音波発振器26からパルス電圧を印加すると、超音波振動子群22a〜22hは、各遅延回路24でそれぞれ設定された遅延時間に応じてパルス振動する。この例では、まず中央の一対の超音波振動子群22d、22eがパルス振動し、そのパルス振動からΔtだけ遅れて両隣の一対の超音波振動子群22c、22fがパルス振動し、そのパルス振動からさらにΔtだけ遅れて次の両隣の超音波振動子群22b、22gがパルス振動し、そのパルス振動からさらにΔtだけ遅れてさらに次の両隣の超音波振動子群、すなわち左・右両端に配置された超音波振動子群22a、22hがパルス振動する。そして、各超音波振動子群22a〜22hは、Tの周期でパルス振動を繰り返す。なお、Δt、Δt、Δtは(後述するΔtも)、msecオーダである。このときに処理槽10内部に向けて照射された超音波振動波が洗浄液中を伝播していく様子を、図5に模式的断面図で示す。
Next, a control example of the ultrasonic transducer groups 22a to 22h will be described.
FIG. 4 is a diagram illustrating the vibration waveforms of the ultrasonic waves a to h irradiated from the ultrasonic transducer groups 22a to 22h to the inside of the processing tank 10. FIG. When the pulse voltage is applied from the ultrasonic oscillator 26 to the ultrasonic transducer groups 22a to 22h, the ultrasonic transducer groups 22a to 22h vibrate in accordance with the delay times set by the delay circuits 24, respectively. In this example, first, the pair of ultrasonic transducer groups 22d and 22e at the center is pulse-vibrated, and the pair of ultrasonic transducer groups 22c and 22f on both sides is pulse-vibrated with a delay of Δt 1 from the pulse vibration. The next adjacent ultrasonic transducer groups 22b and 22g are further delayed by Δt 2 from the vibration, and the next adjacent ultrasonic transducer groups are further delayed by Δt 3 from the pulse vibration, that is, left and right. The ultrasonic transducer groups 22a and 22h arranged at both ends undergo pulse vibration. And each ultrasonic transducer | vibrator group 22a-22h repeats a pulse vibration with the period of T. FIG. Note that Δt 1 , Δt 2 , and Δt 3 (also Δt described later) are on the order of msec. FIG. 5 is a schematic cross-sectional view showing how the ultrasonic vibration wave irradiated toward the inside of the processing tank 10 propagates through the cleaning liquid.

図5において、超音波振動子群22a〜22hから照射される個々の超音波振動波の波面を符号28a〜28hで示す。これらの個々の超音波振動波の波面28a〜28hが合成されて、下側に開いた円弧状の合成波面30を形成し、洗浄液中を合成波面30が処理槽10の上部に向かって進行していく。このため、超音波は見掛け上、処理槽10の中央から左・右両側に外れた位置では、図5中に実線矢印Aで示すように鉛直方向に対し傾斜した方向に伝播していき、基板支持具の左・右保持部18、18に対して斜め方向に超音波が作用することとなる。この結果、超音波の進行方向に対して基板保持具の保持部18の背面側に影となる部分を生じることが最小限に抑えられ、洗浄効果の均一性が高まることとなる。   In FIG. 5, the wave fronts of the individual ultrasonic vibration waves irradiated from the ultrasonic transducer groups 22a to 22h are denoted by reference numerals 28a to 28h. The wavefronts 28a to 28h of these individual ultrasonic vibration waves are synthesized to form an arcuate synthetic wavefront 30 that opens downward, and the synthetic wavefront 30 advances toward the upper portion of the treatment tank 10 in the cleaning liquid. To go. Therefore, the ultrasonic wave apparently propagates in a direction inclined with respect to the vertical direction as indicated by a solid arrow A in FIG. An ultrasonic wave acts on the left and right holding portions 18, 18 of the support in an oblique direction. As a result, it is possible to minimize the occurrence of a shadow portion on the back side of the holding part 18 of the substrate holder with respect to the traveling direction of the ultrasonic wave, and the uniformity of the cleaning effect is enhanced.

また、処理槽10の底部近傍に設けられた一対の吐出口20、20からそれぞれ処理槽10内部の中央方向に向けて斜め下向きに供給された洗浄液は、図5中に破線矢印Bで示すように、処理槽10の底部から上部に向かって左右対称的に上昇する。このときの上昇流は、処理槽10の中央部ではほぼ直線状であるが、処理槽10の中央から左右両側に向かうに従って外向きに大きく湾曲する。この場合において、超音波振動子群22a〜22hからそれぞれ超音波を同一位相で照射すると、直進性のある超音波振動波は、水平波面をなして洗浄液中を処理槽10の上部に向かって真っ直ぐに進行していく。このため、超音波の進行波が基板Wの表面上の洗浄液の流れを阻害して、液溜まりを生じ、複数枚の基板Wあるいは基板Wの全面を均一に洗浄することができなくなる。そこで、この実施形態のように、処理槽10内における洗浄液の流動分布の推移状況に合わせて超音波の合成波面30が形成され進行していくように、遅延回路24による遅延時間を設定することにより、基板Wの洗浄効果を高めることができる。   Further, the cleaning liquid supplied obliquely downward from the pair of discharge ports 20, 20 provided in the vicinity of the bottom of the processing tank 10 toward the central direction inside the processing tank 10 is shown by a broken line arrow B in FIG. 5. Next, it rises symmetrically from the bottom to the top of the treatment tank 10. The upward flow at this time is substantially linear at the center of the processing tank 10, but is greatly curved outward as it goes from the center of the processing tank 10 to the left and right sides. In this case, when ultrasonic waves are irradiated from the ultrasonic transducer groups 22a to 22h in the same phase, the straight ultrasonic vibration waves form a horizontal wavefront and straight in the cleaning liquid toward the upper portion of the processing tank 10. Proceed to. For this reason, the traveling wave of the ultrasonic wave obstructs the flow of the cleaning liquid on the surface of the substrate W, resulting in a liquid pool, and the plurality of substrates W or the entire surface of the substrate W cannot be cleaned uniformly. Therefore, as in this embodiment, the delay time by the delay circuit 24 is set so that the synthetic wavefront 30 of the ultrasonic wave is formed and progresses in accordance with the transition state of the flow distribution of the cleaning liquid in the treatment tank 10. Thus, the cleaning effect of the substrate W can be enhanced.

なお、遅延時間Δt、Δt、Δtを変更すると、超音波の合成波面30の形状を変更することができるので、洗浄処理の途中において遅延時間Δt、Δt、Δtの値を変更することにより、基板支持具の保持部18に対して超音波が作用する傾きを変えることができる。これにより、超音波の進行方向に対して基板保持具の保持部18の背面側に生じる影となる部分が変化する。この結果として、超音波の進行方向に対して常に影となる部分の領域を小さくすることができ、洗浄効果の均一性をより高めることができる。また、洗浄処理の途中で適宜、超音波振動子群22a〜22hからそれぞれ超音波を同一位相で照射するようにしてもよい。このときには、超音波の合成波面は水平面をなす形で処理槽10内の洗浄液中を上向きに進行していくこととなり(図8の(b)参照)、上述した超音波照射態様と組み合わせることにより、洗浄効果の均一性をより高めることができる。なお、図5においては(後述する図8においても)、伝播槽の図示を省略しているが、伝播槽の有無に関係なく、この発明による上記効果は得られる。 The delay time Delta] t 1, Delta] t 2, when changing the Delta] t 3, it is possible to change the ultrasonic shape of combined wavefront 30, the delay time in the middle of the cleaning Delta] t 1, Delta] t 2, the value of Delta] t 3 By changing the inclination, the inclination of the ultrasonic wave acting on the holding part 18 of the substrate support can be changed. Thereby, the shadowed portion generated on the back side of the holding part 18 of the substrate holder changes with respect to the traveling direction of the ultrasonic wave. As a result, it is possible to reduce the area of the portion that is always shadowed with respect to the traveling direction of the ultrasonic wave, and to improve the uniformity of the cleaning effect. Moreover, you may make it irradiate an ultrasonic wave from the ultrasonic transducer | vibrator groups 22a-22h in the same phase suitably in the middle of a washing process. At this time, the combined wavefront of the ultrasonic waves travels upward in the cleaning liquid in the treatment tank 10 in a horizontal plane (see FIG. 8B), and in combination with the ultrasonic irradiation mode described above. Further, the uniformity of the cleaning effect can be further improved. In FIG. 5 (also in FIG. 8 described later), the propagation tank is not shown, but the above-described effect of the present invention can be obtained regardless of the presence or absence of the propagation tank.

図6は、この発明の別の実施形態を示し、超音波振動子群22a〜22hから処理槽10内部へ照射される超音波a〜hの振動波形をそれぞれ示す図である。この図6に示した例では、超音波振動子群22a〜22hに対し超音波発振器26から各遅延回路24を介してパルス電圧を印加すると、最初に、超音波振動子群22a〜22hは、その配列順に従って一端側の超音波振動子群22aから順次Δtずつ遅れて(Δt分ずつ位相を遅らせて)パルス振動する。そして、各超音波振動子群22a〜22hは、Tの周期でパルス振動を繰り返す。このときに処理槽10内部に向けて照射された超音波振動波が洗浄液中を伝播していく様子を、図7および図8の(a)にそれぞれ模式的断面図で示す。図7に示すように、超音波振動子群22a〜22hから処理槽10内部に向けて照射された個々の超音波振動波の波面32a〜32hが合成されて、複数の基板Wの配列方向と直交する方向において水平面に対し右下がりに傾斜した直線状の合成波面34を形成し、洗浄液中を合成波面34が処理槽10の上部に向かって進行していく。このため、超音波は見掛け上、図7中に白抜き矢印Cで示すように斜め方向に伝播していき、基板支持具の保持部18、20に対して斜め方向に超音波が作用することとなる。   FIG. 6 shows another embodiment of the present invention, and is a diagram showing the vibration waveforms of ultrasonic waves a to h irradiated from the ultrasonic transducer groups 22a to 22h to the inside of the processing tank 10, respectively. In the example shown in FIG. 6, when a pulse voltage is applied to the ultrasonic transducer groups 22a to 22h from the ultrasonic oscillator 26 via the delay circuits 24, first, the ultrasonic transducer groups 22a to 22h According to the arrangement order, pulse vibration is sequentially delayed from the ultrasonic transducer group 22a at one end by Δt (with the phase delayed by Δt). And each ultrasonic transducer | vibrator group 22a-22h repeats a pulse vibration with the period of T. FIG. FIG. 7 and FIG. 8A are schematic cross-sectional views showing how the ultrasonic vibration wave irradiated toward the inside of the treatment tank 10 propagates through the cleaning liquid. As shown in FIG. 7, the wavefronts 32 a to 32 h of the individual ultrasonic vibration waves irradiated from the ultrasonic transducer groups 22 a to 22 h toward the inside of the processing tank 10 are combined to obtain the arrangement direction of the plurality of substrates W. A linear synthetic wavefront 34 inclined downward to the right with respect to the horizontal plane in the orthogonal direction is formed, and the synthetic wavefront 34 advances in the cleaning liquid toward the upper portion of the treatment tank 10. For this reason, the ultrasonic wave apparently propagates in an oblique direction as indicated by a white arrow C in FIG. 7, and the ultrasonic wave acts in an oblique direction on the holding parts 18 and 20 of the substrate support. It becomes.

次に、超音波振動子群22a〜22hからそれぞれ超音波を同一位相で照射するように切り替える。これにより、超音波振動子群22a〜22hは同期してパルス振動する。図8の(b)は、このときに処理槽10内部に向けて照射された超音波振動波が洗浄液中を伝播していく様子を模式的に示す概略断面図である。図に示すように、超音波振動子群22a〜22hから処理槽10内部に向けて照射された個々の超音波振動波の波面が合成されて、水平面をなす形の合成波面36を形成し、洗浄液中を合成波面36が処理槽10の上部に向かって進行していく。このため、超音波は、基板支持具の保持部18、20に対して真っ直ぐに作用することとなる。   Next, switching is performed so that ultrasonic waves are irradiated from the ultrasonic transducer groups 22a to 22h in the same phase. As a result, the ultrasonic transducer groups 22a to 22h vibrate in synchronization with each other. FIG. 8B is a schematic cross-sectional view schematically showing how the ultrasonic vibration wave irradiated toward the inside of the treatment tank 10 at this time propagates through the cleaning liquid. As shown in the figure, the wavefronts of the individual ultrasonic vibration waves irradiated from the ultrasonic transducer groups 22a to 22h toward the inside of the treatment tank 10 are combined to form a combined wavefront 36 that forms a horizontal plane, The synthetic wavefront 36 advances toward the upper part of the processing tank 10 in the cleaning liquid. For this reason, the ultrasonic wave acts directly on the holding portions 18 and 20 of the substrate support.

続いて、超音波振動子群22a〜22hから上記した順番とは逆の順番にそれぞれ超音波を照射するように切り替える。すなわち、超音波振動子群22a〜22hが、その配列順に従って他端側の超音波振動子群22hから順次Δtずつ遅れて(一端側の超音波振動子群22aから順次Δt分ずつ位相を進めて)パルス振動するように切り替える。そして、各超音波振動子群22a〜22hがTの周期でパルス振動を繰り返すようにする。図8の(c)は、このときに処理槽10内部に向けて照射された超音波振動波が洗浄液中を伝播していく様子を模式的に示す概略断面図である。図に示すように、超音波振動子群22a〜22hから処理槽10内部に向けて照射された個々の超音波振動波の波面が合成されて、複数の基板Wの配列方向と直交する方向において水平面に対し左下がりに傾斜した直線状の合成波面38を形成し、洗浄液中を合成波面38が処理槽10の上部に向かって進行していく。このため、超音波は見掛け上、図8の(a)に示した向きとは逆向きの斜め方向に伝播していき、基板支持具の保持部18、20に対して斜め方向に超音波が作用することとなる。以上のように、超音波の合成波面34、36、38の進行方向が変化していくことにより、超音波の進行方向に対して基板保持具の保持部18、20の背面側に生じる影となる部分が変化するので、常に影となる部分の領域が小さくなる。このため、基板Wの洗浄面全域に効果的に超音波が照射されて、洗浄効果の均一性が高まることとなる。   Subsequently, the ultrasonic transducer groups 22a to 22h are switched so as to irradiate ultrasonic waves in the order opposite to the order described above. That is, the ultrasonic transducer groups 22a to 22h are sequentially delayed by Δt from the ultrasonic transducer group 22h on the other end side according to the arrangement order (the phase is advanced by Δt sequentially from the ultrasonic transducer group 22a on the one end side). Switch to pulse vibration. And each ultrasonic transducer | vibrator group 22a-22h repeats a pulse vibration with the period of T. FIG. 8C is a schematic cross-sectional view schematically showing how the ultrasonic vibration wave irradiated toward the inside of the processing bath 10 at this time propagates through the cleaning liquid. As shown in the figure, the wavefronts of the individual ultrasonic vibration waves irradiated from the ultrasonic transducer groups 22a to 22h toward the inside of the processing tank 10 are synthesized, and in a direction orthogonal to the arrangement direction of the plurality of substrates W. A linear synthetic wavefront 38 inclined downward to the left with respect to the horizontal plane is formed, and the synthetic wavefront 38 advances toward the upper part of the treatment tank 10 in the cleaning liquid. For this reason, the ultrasonic wave apparently propagates in an oblique direction opposite to the direction shown in FIG. 8A, and the ultrasonic wave is obliquely directed with respect to the holding portions 18 and 20 of the substrate support. Will act. As described above, when the traveling direction of the synthetic wavefronts 34, 36, and 38 of the ultrasonic waves is changed, the shadow generated on the back side of the holding portions 18 and 20 of the substrate holder with respect to the traveling direction of the ultrasonic waves Since the part to be changed changes, the area of the part which is always a shadow becomes small. For this reason, ultrasonic waves are effectively applied to the entire cleaning surface of the substrate W, and the uniformity of the cleaning effect is increased.

上記した3つの超音波照射態様は、必要に応じて繰り返され、例えば図8の(a)に示した態様と(c)に示した態様とが、(b)に示した態様を介在させて交互に繰り返される。なお、超音波振動子群22a〜22hから超音波を同一位相で照射することを行わずに、図8の(a)に示した態様と(c)に示した態様とだけを行い、あるいは、それら2つの態様を交互に繰り返すようにしてもよい。また、遅延時間Δtを変更すると、例えば遅延時間Δtを大きくすると、超音波の合成波面34、38の傾斜角度は大きくなり、遅延時間Δtを小さくすると、超音波の合成波面34、38の傾斜角度は小さくなるので、洗浄処理の途中において遅延時間Δtの値を変更することにより、基板支持具の保持部18、20に対して超音波が作用する傾きを変えるようにしてもよい。これにより、超音波の進行方向に対して基板保持具の保持部18、20の背面側に生じる影となる部分が変化するので、超音波の進行方向に対して常に影となる部分の領域が小さくなって、洗浄効果の均一性がより高まることとなる。   The three ultrasonic irradiation modes described above are repeated as necessary. For example, the mode shown in (a) of FIG. 8 and the mode shown in (c) intervene the mode shown in (b). Repeated alternately. In addition, without irradiating ultrasonic waves from the ultrasonic transducer groups 22a to 22h in the same phase, only the mode shown in (a) of FIG. 8 and the mode shown in (c) are performed, or These two modes may be alternately repeated. Further, when the delay time Δt is changed, for example, when the delay time Δt is increased, the inclination angle of the ultrasonic wavefronts 34 and 38 is increased, and when the delay time Δt is decreased, the inclination angle of the ultrasonic wavefronts 34 and 38 is increased. Therefore, by changing the value of the delay time Δt during the cleaning process, the inclination of the ultrasonic wave acting on the holding parts 18 and 20 of the substrate support may be changed. As a result, the shadowed portion generated on the back side of the holding parts 18 and 20 of the substrate holder changes with respect to the traveling direction of the ultrasonic wave. As a result, the uniformity of the cleaning effect is further increased.

この発明の実施形態の1例を示し、基板を超音波洗浄する基板処理装置の概略構成を示す模式的断面図である。1 is a schematic cross-sectional view illustrating a schematic configuration of a substrate processing apparatus for ultrasonically cleaning a substrate according to an embodiment of the present invention. 図1に示した基板処理装置の外観を示す斜視図である。It is a perspective view which shows the external appearance of the substrate processing apparatus shown in FIG. 図1に示した基板処理装置の制御系を概略構成を示すブロック図である。FIG. 2 is a block diagram showing a schematic configuration of a control system of the substrate processing apparatus shown in FIG. 1. 図1に示した基板処理装置を使用して基板を超音波洗浄するときの、超音波振動子群から処理槽内部へ照射される超音波の振動波形の1例を示す図である。It is a figure which shows an example of the vibration waveform of the ultrasonic wave irradiated to the inside of a processing tank from an ultrasonic transducer | vibrator group when ultrasonically cleaning a board | substrate using the substrate processing apparatus shown in FIG. 図1に示した基板処理装置を使用して基板を超音波洗浄するときの、図4に示した態様で処理槽内部に向けて照射された超音波振動波が洗浄液中を伝播していく様子を模式的に示す断面図である。When the substrate is ultrasonically cleaned using the substrate processing apparatus shown in FIG. 1, the ultrasonic vibration wave irradiated toward the inside of the processing tank in the mode shown in FIG. 4 propagates in the cleaning liquid. It is sectional drawing which shows this typically. 図1に示した基板処理装置を使用して基板を超音波洗浄するときの、超音波振動子群から処理槽内部へ照射される超音波の振動波形の別の例を示す図である。It is a figure which shows another example of the vibration waveform of the ultrasonic wave irradiated to the inside of a processing tank from an ultrasonic transducer | vibrator group when ultrasonically cleaning a board | substrate using the substrate processing apparatus shown in FIG. 図1に示した基板処理装置を使用して基板を超音波洗浄するときの、図6に示した態様で処理槽内部に向けて照射された超音波振動波が洗浄液中を伝播していく様子を模式的に示す断面図である。When the substrate is ultrasonically cleaned using the substrate processing apparatus shown in FIG. 1, the ultrasonic vibration wave irradiated toward the inside of the processing tank in the mode shown in FIG. 6 propagates in the cleaning liquid. It is sectional drawing which shows this typically. 図1に示した基板処理装置を使用して基板を超音波洗浄するときの、図6に示した態様で処理槽内部に向けて照射された超音波振動波が洗浄液中を伝播していく様子をそれぞれ模式的に示す断面図である。When the substrate is ultrasonically cleaned using the substrate processing apparatus shown in FIG. 1, the ultrasonic vibration wave irradiated toward the inside of the processing tank in the mode shown in FIG. 6 propagates in the cleaning liquid. It is sectional drawing which shows each typically. 従来のバッチ式超音波洗浄装置の概略構成の1例を示す模式的断面図である。It is typical sectional drawing which shows an example of schematic structure of the conventional batch type ultrasonic cleaning apparatus.

符号の説明Explanation of symbols

10 処理槽
14 伝播槽
16、18 基板保持具の保持部
20 吐出管
22 超音波振動板
22a〜22h 超音波振動子群
24、24a 遅延回路
26 超音波発振器
28a〜28h,32a〜32h 超音波振動波の波面
30、34、36、38 合成波面
W 基板
DESCRIPTION OF SYMBOLS 10 Processing tank 14 Propagation tank 16,18 Substrate holder holding part 20 Discharge pipe 22 Ultrasonic vibration plate 22a-22h Ultrasonic transducer group 24, 24a Delay circuit 26 Ultrasonic oscillator 28a-28h, 32a-32h Ultrasonic vibration Wave front 30, 34, 36, 38 Composite wave front W substrate

Claims (14)

基板保持手段の保持部によりそれぞれ下端部を支持されて鉛直姿勢で互いに平行にかつ水平方向に配列された複数の基板を処理槽内に保持し、前記処理槽の底部近傍に前記複数の基板の配列方向に沿って配設された洗浄液供給手段から前記処理槽の内部に向けて洗浄液を供給しながら、前記基板保持手段に保持された複数の基板に対し前記処理槽の底部側から超音波を照射して、複数の基板を洗浄する基板処理方法において、
前記洗浄液供給手段から供給された洗浄液が前記処理槽内の洗浄液中に拡散していくときの、前記複数の基板の配列方向と直交する断面内における流動分布の推移状況と、前記処理槽の底部側から照射された超音波が処理槽内の洗浄液中を伝播していくときの、前記複数の基板の配列方向と直交する断面内における合成波面の進行状況とが相互に適合するように、前記複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ位相をずらして超音波を照射することを特徴とする基板処理方法。
A plurality of substrates that are supported by the holding portions of the substrate holding means and are arranged in parallel and horizontally in a vertical posture are held in the processing tank, and the plurality of substrates are arranged near the bottom of the processing tank. While supplying the cleaning liquid from the cleaning liquid supply means disposed along the arrangement direction toward the inside of the processing tank, ultrasonic waves are applied from the bottom side of the processing tank to the plurality of substrates held by the substrate holding means. In the substrate processing method of irradiating and cleaning a plurality of substrates,
When the cleaning liquid supplied from the cleaning liquid supply means diffuses into the cleaning liquid in the processing tank, the transition state of the flow distribution in the cross section perpendicular to the arrangement direction of the plurality of substrates, and the bottom of the processing tank When the ultrasonic wave irradiated from the side propagates through the cleaning liquid in the processing tank, the progress of the synthetic wavefront in the cross section orthogonal to the arrangement direction of the plurality of substrates is mutually compatible. A substrate processing method comprising irradiating ultrasonic waves with a phase shifted from a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged in parallel in a direction orthogonal to the arrangement direction of the plurality of substrates.
請求項1に記載の基板処理方法において、
前記処理槽の底部近傍の両側に左右対称に配設された一対の洗浄液供給手段から洗浄液をそれぞれ左右対称にかつ処理槽内部の中央方向に向けて斜め下向きに供給し、
左右対称に並設された複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ照射される超音波の位相を、左右対称位置にある超音波振動子群同士もしくは超音波振動子同士で一致させ、かつ、前記複数の基板の配列方向と直交する方向における中央位置にある超音波振動子群もしくは超音波振動子に対しそれから遠ざかる位置にある超音波振動子群もしくは超音波振動子ほど順次遅らせることを特徴とする基板処理方法。
The substrate processing method according to claim 1,
Supplying the cleaning liquid from the pair of cleaning liquid supply means disposed symmetrically on both sides in the vicinity of the bottom of the processing tank, respectively, symmetrically and obliquely downward toward the central direction inside the processing tank,
The phase of ultrasonic waves emitted from a plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged side by side in the left-right symmetry is determined between the ultrasonic transducer groups or ultrasonic transducers at the left-right symmetrical positions. The ultrasonic transducer groups or ultrasonic transducers that are in the same position and away from the ultrasonic transducer group or ultrasonic transducer in the central position in the direction orthogonal to the arrangement direction of the plurality of substrates are sequentially A substrate processing method characterized by delaying.
基板保持手段の保持部によりそれぞれ下端部を支持されて鉛直姿勢で互いに平行にかつ水平方向に配列された複数の基板を処理槽内に保持し、前記処理槽の底部近傍に前記複数の基板の配列方向に沿って配設された洗浄液供給手段から前記処理槽の内部に向けて洗浄液を供給しながら、前記基板保持手段に保持された複数の基板に対し前記処理槽の底部側から超音波を照射して、複数の基板を洗浄する基板処理方法において、
前記複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を遅らせて照射する第1の工程と、
前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を進めて照射する第2の工程と、
を含むことを特徴とする基板処理方法。
A plurality of substrates that are supported by the holding portions of the substrate holding means and are arranged in parallel and horizontally in a vertical posture are held in the processing tank, and the plurality of substrates are arranged near the bottom of the processing tank. While supplying the cleaning liquid from the cleaning liquid supply means disposed along the arrangement direction toward the inside of the processing tank, ultrasonic waves are applied from the bottom side of the processing tank to the plurality of substrates held by the substrate holding means. In the substrate processing method of irradiating and cleaning a plurality of substrates,
The ultrasonic waves are respectively emitted from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers arranged in parallel in the direction orthogonal to the arrangement direction of the plurality of substrates, according to the arrangement order of the ultrasonic transducer groups or the ultrasonic transducers. A first step of sequentially irradiating with a phase delay;
A second step of irradiating ultrasonic waves respectively from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers with the phase being sequentially advanced according to the arrangement order of the ultrasonic transducer groups or the ultrasonic transducers;
A substrate processing method comprising:
請求項3に記載の基板処理方法において、
前記第1の工程と前記第2の工程とが交互に繰り返されることを特徴とする基板処理方法。
The substrate processing method according to claim 3,
The substrate processing method, wherein the first step and the second step are alternately repeated.
請求項3に記載の基板処理方法において、
前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を同一位相で照射する第3の工程をさらに含むことを特徴とする基板処理方法。
The substrate processing method according to claim 3,
A substrate processing method, further comprising a third step of irradiating ultrasonic waves from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers in the same phase.
請求項5に記載の基板処理方法において、
前記第1の工程と前記第2の工程とが、前記第3の工程を介在させて交互に繰り返されることを特徴とする基板処理方法。
The substrate processing method according to claim 5,
The substrate processing method, wherein the first step and the second step are alternately repeated with the third step interposed.
洗浄液を貯留する処理槽と、
複数の基板を、その各下端部を保持部により支持して鉛直姿勢で互いに平行にかつ水平方向に配列させた状態で前記処理槽の内部に保持する基板保持手段と、
前記処理槽の底部近傍に、前記基板保持手段に保持される複数の基板の配列方向に沿って配設され、前記処理槽の内部に向けて洗浄液を吐出する洗浄液供給手段と、
前記基板保持手段に保持された複数の基板に対し前記処理槽の底部側から超音波を照射する超音波照射手段と、
を備え、前記基板保持手段に保持された複数の基板を洗浄する基板処理装置において、
前記複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子と、
前記複数の超音波振動子群もしくは複数の超音波振動子に接続された超音波発振器と、
前記処理液供給手段から供給された洗浄液が前記処理槽内の洗浄液中に拡散していくときの、前記複数の基板の配列方向と直交する断面内における流動分布の推移状況と、前記処理槽の底部側から照射された超音波が処理槽内の洗浄液中を伝播していくときの、前記複数の基板の配列方向と直交する断面内における合成波面の進行とが相互に適合するように、前記超音波発振器から前記複数の超音波振動子群もしくは複数の超音波振動子へそれぞれ送られる発振波の位相をずらすように制御する制御回路と、
を備えることを特徴とする基板処理装置。
A treatment tank for storing the cleaning liquid;
Substrate holding means for holding the plurality of substrates in the processing tank in a state where the lower ends thereof are supported by the holding unit and arranged in parallel and in the horizontal direction in a vertical posture;
A cleaning liquid supply means that is disposed in the vicinity of the bottom of the processing tank along the arrangement direction of the plurality of substrates held by the substrate holding means, and discharges the cleaning liquid toward the inside of the processing tank;
Ultrasonic irradiation means for irradiating ultrasonic waves from the bottom side of the processing tank to the plurality of substrates held by the substrate holding means;
A substrate processing apparatus for cleaning a plurality of substrates held by the substrate holding means,
A plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged in parallel in a direction orthogonal to the arrangement direction of the plurality of substrates;
An ultrasonic oscillator connected to the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers;
When the cleaning liquid supplied from the processing liquid supply means diffuses into the cleaning liquid in the processing tank, the transition state of the flow distribution in the cross section orthogonal to the arrangement direction of the plurality of substrates, When the ultrasonic wave irradiated from the bottom side propagates in the cleaning liquid in the processing tank, the progress of the composite wavefront in the cross section orthogonal to the arrangement direction of the plurality of substrates is adapted to each other. A control circuit for controlling to shift the phase of the oscillation wave sent from the ultrasonic oscillator to the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers, respectively;
A substrate processing apparatus comprising:
請求項7に記載の基板処理装置において、
前記洗浄液供給手段が前記処理槽の底部近傍の両側に左右対称に一対設けられて、その一対の洗浄液供給手段から洗浄液がそれぞれ左右対称にかつ処理槽内部の中央方向に向けて斜め下向きに供給されるようにし、
前記複数の超音波振動子群もしくは複数の超音波振動子が左右対称に配置され、
前記制御回路により、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ照射される超音波の位相を、左右対称位置にある超音波振動子群同士もしくは超音波振動子同士で一致させ、かつ、前記複数の基板の配列方向と直交する方向における中央位置にある超音波振動子群もしくは超音波振動子に対しそれから遠ざかる位置にある超音波振動子群もしくは超音波振動子ほど順次遅らせるように制御することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 7,
A pair of the cleaning liquid supply means are provided symmetrically on both sides in the vicinity of the bottom of the processing tank, and the cleaning liquid is supplied from the pair of cleaning liquid supply means symmetrically and obliquely downward toward the central direction inside the processing tank. And
The plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers are arranged symmetrically,
By the control circuit, the phases of the ultrasonic waves irradiated from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers are matched between the ultrasonic transducer groups or the ultrasonic transducers at the left and right symmetrical positions. In addition, the ultrasonic transducer group or the ultrasonic transducer located at a position farther from the ultrasonic transducer group or the ultrasonic transducer located at the center position in the direction orthogonal to the arrangement direction of the plurality of substrates is sequentially delayed. The substrate processing apparatus is characterized by being controlled as described above.
洗浄液を貯留する処理槽と、
複数の基板を、その各下端部を保持部により支持して鉛直姿勢で互いに平行にかつ水平方向に配列させた状態で前記処理槽の内部に保持する基板保持手段と、
前記処理槽の底部近傍に、前記基板保持手段に保持される複数の基板の配列方向に沿って配設され、前記処理槽の内部に向けて洗浄液を吐出する洗浄液供給手段と、
前記基板保持手段に保持された複数の基板に対し前記処理槽の底部側から超音波を照射する超音波照射手段と、
を備え、前記基板保持手段に保持された複数の基板を洗浄する基板処理装置において、
前記複数の基板の配列方向と直交する方向に並設された複数の超音波振動子群もしくは複数の超音波振動子と、
前記複数の超音波振動子群もしくは複数の超音波振動子に接続された超音波発振器と、
前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を遅らせて照射する第1の状態と、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を、超音波振動子群もしくは超音波振動子の配列順に従い順次位相を進めて照射する第2の状態とを切り替えるように制御する制御回路と、
を備えることを特徴とする基板処理装置。
A treatment tank for storing the cleaning liquid;
Substrate holding means for holding the plurality of substrates in the processing tank in a state where the lower ends thereof are supported by the holding unit and arranged in parallel and in the horizontal direction in a vertical posture;
A cleaning liquid supply means that is disposed in the vicinity of the bottom of the processing tank along the arrangement direction of the plurality of substrates held by the substrate holding means, and discharges the cleaning liquid toward the inside of the processing tank;
Ultrasonic irradiation means for irradiating ultrasonic waves from the bottom side of the processing tank to the plurality of substrates held by the substrate holding means;
A substrate processing apparatus for cleaning a plurality of substrates held by the substrate holding means,
A plurality of ultrasonic transducer groups or a plurality of ultrasonic transducers arranged in parallel in a direction perpendicular to the arrangement direction of the plurality of substrates;
An ultrasonic oscillator connected to the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers;
A first state in which ultrasonic waves are respectively emitted from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers while being sequentially delayed in phase according to the arrangement order of the ultrasonic transducer groups or the ultrasonic transducers; Control is performed so as to switch between a second state in which ultrasonic waves are sequentially advanced in accordance with the arrangement order of the ultrasonic transducer groups or ultrasonic transducers from the ultrasonic transducer group or a plurality of ultrasonic transducers. A control circuit to
A substrate processing apparatus comprising:
請求項9に記載の基板処理装置において、
前記制御回路により、前記第1の状態と前記第2の状態とが交互に繰り返されるように制御することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 9,
The substrate processing apparatus, wherein the control circuit controls the first state and the second state to be alternately repeated.
請求項9に記載の基板処理装置において、
前記制御回路により、前記複数の超音波振動子群もしくは複数の超音波振動子からそれぞれ超音波を同一位相で照射する第3の状態と前記第1の状態と前記第2の状態とを択一的に切り替えるように制御することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 9,
The control circuit selects between the third state, the first state, and the second state in which ultrasonic waves are emitted from the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers in the same phase. The substrate processing apparatus is controlled to be switched automatically.
請求項11に記載の基板処理装置において、
前記制御回路により、前記第1の状態と前記第2の状態とが、前記第3の状態を介在させて交互に繰り返されるように制御することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 11, wherein
The substrate processing apparatus, wherein the control circuit performs control so that the first state and the second state are alternately repeated with the third state interposed therebetween.
請求項7ないし請求項12のいずれかに記載の基板処理装置において、
前記超音波発振器は、パルス波を発振するパルス発振器であることを特徴とする基板処理装置。
The substrate processing apparatus according to any one of claims 7 to 12,
The substrate processing apparatus, wherein the ultrasonic oscillator is a pulse oscillator that oscillates a pulse wave.
請求項7ないし請求項13のいずれかに記載の基板処理装置において、
前記制御回路は、前記超音波発振器と前記複数の超音波振動子群もしくは複数の超音波振動子との間にそれぞれ介挿された複数の遅延回路を含むことを特徴とする基板処理装置。
The substrate processing apparatus according to claim 7, wherein:
The substrate processing apparatus, wherein the control circuit includes a plurality of delay circuits interposed between the ultrasonic oscillator and the plurality of ultrasonic transducer groups or the plurality of ultrasonic transducers.
JP2008077190A 2008-03-25 2008-03-25 Method for processing substrate and substrate processing device Pending JP2009231667A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012055818A (en) * 2010-09-08 2012-03-22 Hitachi Kokusai Denki Engineering:Kk Ultrasonic cleaning device, and ultrasonic cleaning method
WO2013099082A1 (en) * 2011-12-27 2013-07-04 コニカミノルタ株式会社 Method for manufacturing glass substrate for hdd
JP2014045188A (en) * 2012-08-27 2014-03-13 Imec System for delivering ultrasonic energy to liquid and its use for cleaning of solid parts

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012055818A (en) * 2010-09-08 2012-03-22 Hitachi Kokusai Denki Engineering:Kk Ultrasonic cleaning device, and ultrasonic cleaning method
WO2013099082A1 (en) * 2011-12-27 2013-07-04 コニカミノルタ株式会社 Method for manufacturing glass substrate for hdd
JP2014045188A (en) * 2012-08-27 2014-03-13 Imec System for delivering ultrasonic energy to liquid and its use for cleaning of solid parts

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