JP2009224383A - Substrate cleaning device, substrate cleaning method, and storage medium - Google Patents

Substrate cleaning device, substrate cleaning method, and storage medium Download PDF

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JP2009224383A
JP2009224383A JP2008064410A JP2008064410A JP2009224383A JP 2009224383 A JP2009224383 A JP 2009224383A JP 2008064410 A JP2008064410 A JP 2008064410A JP 2008064410 A JP2008064410 A JP 2008064410A JP 2009224383 A JP2009224383 A JP 2009224383A
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cleaning
brush
substrate
brush portion
back surface
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JP5050945B2 (en
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Shuichi Nishikido
修一 錦戸
Naoto Yoshitaka
直人 吉高
Takahiro Kitano
高広 北野
Yoichi Tokunaga
容一 徳永
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • General Physics & Mathematics (AREA)
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  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To improve productivity of a substrate, in a substrate cleaning device. <P>SOLUTION: This substrate cleaning device 2 includes: a brush cleaner 5 which is arranged away from a position for cleaning a substrate 6 by a cleaning member 50, and of which the undersurface is formed as a cleaning surface contacting a brush part to clean the brush part; a moving means moving the cleaning member between a region for cleaning the substrate and a region for cleaning the brush part by the brush cleaner; a means pressing the brush part of the cleaning member against the undersurface of the brush cleaner, and relatively rotating the brush cleaner and the cleaning member; and a cleaning liquid supply means supplying a cleaning liquid between the undersurface of the brush cleaner and the brush part when the brush cleaner and the brush member are being relatively rotated. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、例えば半導体ウエハや液晶ディスプレイ用のガラス基板（ＬＣＤ基板）といった基板の裏面に洗浄部材を接触させて基板を洗浄する基板洗浄装置及び基板洗浄方法に関する。   The present invention relates to a substrate cleaning apparatus and a substrate cleaning method for cleaning a substrate by bringing a cleaning member into contact with the back surface of the substrate such as a semiconductor wafer or a glass substrate (LCD substrate) for a liquid crystal display.

半導体デバイスの製造工程においては、例えば半導体ウエハ（以下ウエハという）を清浄な状態に保つことが極めて重要である。このため各々の製造プロセスや処理プロセスの前後においては、必要に応じてウエハの表面を洗浄するプロセスが設けられている。   In the manufacturing process of a semiconductor device, for example, it is extremely important to keep a semiconductor wafer (hereinafter referred to as a wafer) in a clean state. For this reason, a process for cleaning the surface of the wafer is provided as necessary before and after each manufacturing process and processing process.

また近年では、液浸露光やダブルパターニングといった配線技術の更なる微細化に伴って半導体デバイスの製造工程に含まれる工程数が増加し、ウエハの裏面にパーティクルが付着するリスクが大きくなっているため、ウエハの裏面を洗浄するプロセスも設けられている（特許文献１参照）。   In recent years, with the further miniaturization of wiring technology such as immersion exposure and double patterning, the number of processes included in the semiconductor device manufacturing process has increased, and the risk of particles adhering to the backside of the wafer has increased. A process for cleaning the back surface of the wafer is also provided (see Patent Document 1).

ウエハの裏面を洗浄する装置について図１５を用いて簡単に説明する。図１５に示す洗浄装置はウエハＷの裏面中央部分を吸着保持するスピンチャック１０を備えており、このスピンチャック１０はモータ１１と、当該モータ１１の回転駆動によって回転する回転軸１４とから構成されている。また前記スピンチャック１０に吸着保持されているウエハＷの下方側には、例えば多数のプラスチック繊維を円柱状に束ねた構造のブラシ部１２を有する洗浄部材１３が前記回転軸１４の外側に配置されている。前記ブラシ部１２はその上面をウエハＷの裏面に押し付けた状態で回転するようになっている。さらに前記洗浄装置には洗浄ブラシ１３を基板洗浄位置と待避位置との間で移動させるための図示しない移動手段が設けられており、前記洗浄ブラシ１３が待避位置にある時には前記ブラシ部１２の上方側から洗浄液が供給されるようになっている。このように構成された洗浄装置で行われる洗浄処理では、回転しているウエハＷに対して下方側からウエットの状態にあるブラシ部１２を押し付けてウエハＷとブラシ部１２とを摺動させることによってウエハＷ裏面のパーティクルを除去している。   An apparatus for cleaning the back surface of a wafer will be briefly described with reference to FIG. The cleaning apparatus shown in FIG. 15 includes a spin chuck 10 that sucks and holds the central portion of the back surface of the wafer W. The spin chuck 10 includes a motor 11 and a rotating shaft 14 that rotates by the rotation of the motor 11. ing. A cleaning member 13 having a brush portion 12 having a structure in which, for example, a large number of plastic fibers are bundled in a cylindrical shape is disposed on the outer side of the rotating shaft 14 below the wafer W attracted and held by the spin chuck 10. ing. The brush portion 12 rotates with its upper surface pressed against the back surface of the wafer W. Further, the cleaning device is provided with a moving means (not shown) for moving the cleaning brush 13 between the substrate cleaning position and the retracted position. When the cleaning brush 13 is in the retracted position, the upper portion of the brush portion 12 is positioned above the brush portion 12. The cleaning liquid is supplied from the side. In the cleaning process performed by the cleaning apparatus configured as described above, the wet brush portion 12 is pressed against the rotating wafer W from below to slide the wafer W and the brush portion 12 together. Thus, particles on the back surface of the wafer W are removed.

ところで前記ブラシ部１２は一定期間使用すると汚染してくるため、ダミーウエハを用いて上述と同じようにしてウエットの状態にあるブラシ部１２とダミーウエハとを摺動させることによって当該ブラシ部１２の洗浄を行っている。また前記ブラシ部１２の交換直後は当該ブラシ部１２から塵が発生するため、ブラシ部１２からの発塵を低減するために、ブラシ部１２の交換時にダミーウエハを流して当該ブラシ部１２の洗浄を行っている。   By the way, since the brush part 12 is contaminated when used for a certain period of time, the brush part 12 is cleaned by sliding the wet brush part 12 and the dummy wafer in the same manner as described above using a dummy wafer. Is going. In addition, since dust is generated from the brush portion 12 immediately after the replacement of the brush portion 12, in order to reduce dust generation from the brush portion 12, a dummy wafer is flowed when the brush portion 12 is replaced to clean the brush portion 12. Is going.

しかし、上述した洗浄装置でのブラシ部１２の洗浄には次のような問題がある。ブラシ部１２の汚染を防ぐために定期的にダミーウエハを流すと、ダミーウエハを流している間は製品ウエハに対して洗浄処理を行うことができず、ウエハの生産性が低下してしまうといった問題がある。特にブラシ部１２の交換時にダミーウエハを流す場合には、ブラシ部１２の洗浄能力を安定させるために何度もダミーウエハを流すため、ウエハの生産性が大幅に低下する。また前記洗浄装置はウエハＷの裏面を洗浄する専用の装置であるため、ブラシ部１２をウエハＷの裏面に押し付ける力はウエハＷの裏面を傷付けない程度の力であるため非常に弱く、ダミーウエハを用いてブラシ部１２を洗浄するのに長い時間がかかり、これもウエハの生産性を低下させる一因となっている。   However, the cleaning of the brush unit 12 with the above-described cleaning apparatus has the following problems. If a dummy wafer is periodically flowed in order to prevent contamination of the brush part 12, there is a problem that the product wafer cannot be cleaned while the dummy wafer is being flown, resulting in a decrease in wafer productivity. . In particular, when a dummy wafer is caused to flow when the brush portion 12 is replaced, the dummy wafer is caused to flow many times in order to stabilize the cleaning ability of the brush portion 12, and thus the productivity of the wafer is greatly reduced. Further, since the cleaning device is a dedicated device for cleaning the back surface of the wafer W, the force for pressing the brush portion 12 against the back surface of the wafer W is very weak because it does not damage the back surface of the wafer W. It takes a long time to clean the brush part 12 by using this, which also contributes to a reduction in wafer productivity.

特開平１１−６７７０５JP 11-67705 A

本発明はこのような事情の下になされたものであり、その目的は基板の生産性を向上させることができる基板洗浄装置及び基板洗浄方法を提供することにある。   The present invention has been made under such circumstances, and an object thereof is to provide a substrate cleaning apparatus and a substrate cleaning method capable of improving the productivity of a substrate.

本発明は、回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄装置において、
前記洗浄部材により基板を洗浄する位置から離れて設けられ、その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体と、
前記洗浄部材を、基板を洗浄する領域と前記ブラシ洗浄体により前記ブラシ部が洗浄される領域との間で移動させる移動手段と、
前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、ブラシ洗浄体と洗浄部材とを相対的に回転させるための手段と、
前記ブラシ洗浄体とブラシ部材とを相対的に回転させているときに前記ブラシ洗浄体の下面と前記ブラシ部との間に洗浄液を供給する洗浄液供給手段と、を備えたことを特徴とする。 The present invention relates to a substrate cleaning apparatus for cleaning a back surface of a substrate by contacting a brush portion of a cleaning member while supplying a cleaning liquid to the back surface of the substrate rotating around a vertical axis while being held horizontally by a rotation holding means. ,
A brush cleaning body provided as a cleaning surface that is provided apart from a position for cleaning the substrate by the cleaning member and whose lower surface is in contact with the brush portion to clean the brush portion;
Moving means for moving the cleaning member between a region for cleaning the substrate and a region for cleaning the brush portion by the brush cleaning body;
Means for pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body, and rotating the brush cleaning body and the cleaning member relatively;
A cleaning liquid supply unit that supplies a cleaning liquid between the lower surface of the brush cleaning body and the brush portion when the brush cleaning body and the brush member are relatively rotated is provided.

また本発明は、回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄装置において、
その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体と、
前記ブラシ洗浄体を、前記洗浄部材が基板を洗浄する領域と当該領域から離れた待機領域との間で移動させる移動手段と、
基板を洗浄する領域に位置する前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、ブラシ洗浄体と洗浄部材とを相対的に回転させるための手段と、
前記ブラシ洗浄体とブラシ部材とを相対的に回転させているときに前記ブラシ洗浄体の下面と前記ブラシ部との間に洗浄液を供給する洗浄液供給手段と、を備えたことを特徴とする。 The present invention also provides a substrate cleaning apparatus for cleaning the back surface of the substrate by contacting the brush portion of the cleaning member while supplying the cleaning liquid to the back surface of the substrate rotating around the vertical axis while being held horizontally by the rotation holding means. In
A brush cleaning body formed as a cleaning surface whose lower surface is in contact with the brush portion to clean the brush portion;
Moving means for moving the brush cleaning body between a region where the cleaning member cleans the substrate and a standby region away from the region;
Means for pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body located in the region for cleaning the substrate, and relatively rotating the brush cleaning body and the cleaning member;
A cleaning liquid supply unit that supplies a cleaning liquid between the lower surface of the brush cleaning body and the brush portion when the brush cleaning body and the brush member are relatively rotated is provided.

上述した基板洗浄装置は、前記ブラシ部と前記ブラシ洗浄体との潤滑状態を示すストライベック線図において弾性流体潤滑が得られる回転数で回転させることが好ましい。具体的には前記ブラシ部の回転数は例えば２００ｒｐｍ以上であることが好ましい。   The above-described substrate cleaning apparatus is preferably rotated at a rotational speed at which elastohydrodynamic lubrication is obtained in a Stribeck diagram showing a lubrication state between the brush portion and the brush cleaning body. Specifically, the rotation speed of the brush part is preferably 200 rpm or more, for example.

また上述した基板洗浄装置において、前記ブラシ洗浄体の下面に付着した有機物を除去するために紫外線を照射する紫外線ランプをさらに備えてもよい。また前記ブラシ洗浄体は例えばガラス基板であることが好ましい。   The substrate cleaning apparatus described above may further include an ultraviolet lamp that irradiates ultraviolet rays in order to remove organic substances attached to the lower surface of the brush cleaning body. The brush cleaning body is preferably a glass substrate, for example.

また本発明は、回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄方法において、
前記洗浄部材により基板を洗浄する領域から離れて設けられ、その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体を用い、
前記洗浄部材を、基板を洗浄した後、移動手段により前記ブラシ洗浄体の下面に対向する位置まで移動させる工程と、
前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、両者を相対的に回転させながらブラシ洗浄体の下面とブラシ部との間に洗浄液を供給することによりブラシ部を洗浄する工程と、
その後、前記洗浄部材を基板の裏面を洗浄する領域に移動させて基板の裏面を洗浄する工程と、を含むことを特徴とする。 The present invention also provides a substrate cleaning method for cleaning the back surface of the substrate by contacting the brush portion of the cleaning member while supplying the cleaning liquid to the back surface of the substrate rotating around the vertical axis while being held horizontally by the rotation holding means. In
Using a brush cleaning body provided away from the region for cleaning the substrate by the cleaning member, the lower surface of which is formed as a cleaning surface for cleaning the brush portion in contact with the brush portion,
Moving the cleaning member to a position facing the lower surface of the brush cleaning body by moving means after cleaning the substrate;
Cleaning the brush portion by pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body and supplying a cleaning liquid between the lower surface of the brush cleaning body and the brush portion while relatively rotating both;
Thereafter, the cleaning member is moved to a region for cleaning the back surface of the substrate to clean the back surface of the substrate.

また本発明は、回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄方法において、
その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体を用い、
前記洗浄部材により基板を洗浄した後、移動手段により前記ブラシ洗浄体を移動させて当該ブラシ洗浄体の下面と洗浄部材のブラシ部とを対向させる工程と、
前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、両者を相対的に回転させながらブラシ洗浄体の下面とブラシ部との間に洗浄液を供給することによりブラシ部を洗浄する工程と、
その後、前記ブラシ洗浄体を、洗浄部材による基板の裏面の洗浄領域から退避させ、洗浄部材により基板の裏面を洗浄する工程と、を含むことを特徴とする。 The present invention also provides a substrate cleaning method for cleaning the back surface of the substrate by contacting the brush portion of the cleaning member while supplying the cleaning liquid to the back surface of the substrate rotating around the vertical axis while being held horizontally by the rotation holding means. In
Using a brush cleaning body formed as a cleaning surface for cleaning the brush portion with its lower surface in contact with the brush portion,
After cleaning the substrate by the cleaning member, the step of moving the brush cleaning body by moving means to make the lower surface of the brush cleaning body and the brush part of the cleaning member face each other;
Cleaning the brush portion by pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body and supplying a cleaning liquid between the lower surface of the brush cleaning body and the brush portion while relatively rotating both;
Thereafter, the brush cleaning body is retracted from the cleaning region of the back surface of the substrate by the cleaning member, and the back surface of the substrate is cleaned by the cleaning member.

さらに本発明は、基板の裏面を洗浄する基板洗浄装置に用いられるコンピュータプログラムを格納した記憶媒体であって、前記プログラムは上述した基板洗浄方法を実行するためにステップが組まれていることを特徴とする。   Furthermore, the present invention is a storage medium storing a computer program used in a substrate cleaning apparatus for cleaning the back surface of a substrate, wherein the program has steps for executing the substrate cleaning method described above. And

本発明の基板洗浄装置は、基板を洗浄する領域で基板を洗浄した洗浄部材をブラシ洗浄体によりブラシ部が洗浄される領域へ移動させて、この領域で当該洗浄部材を洗浄しているので、洗浄部材のブラシ部を洗浄するために基板の洗浄処理を止めてダミーウエハを流すといった作業を行わなくてよく、基板洗浄装置に流れてくる基板を止めずに連続して洗浄処理することができる。また洗浄部材のブラシ部の洗浄では、ブラシ洗浄体とブラシ部との間に洗浄液を供給しながらブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、ブラシ洗浄体と洗浄部材とを相対的に回転させてブラシ部を洗浄しているので、洗浄部材の洗浄を短時間で行うことができる。これらの効果により基板の生産性が向上する。   In the substrate cleaning apparatus of the present invention, the cleaning member that has cleaned the substrate in the region for cleaning the substrate is moved to the region where the brush part is cleaned by the brush cleaning body, and the cleaning member is cleaned in this region. In order to clean the brush portion of the cleaning member, it is not necessary to stop the substrate cleaning process and flow the dummy wafer, and the substrate can be continuously cleaned without stopping the substrate flowing to the substrate cleaning apparatus. Further, in cleaning the brush part of the cleaning member, the brush part of the cleaning member is pressed against the lower surface of the brush cleaning body while supplying the cleaning liquid between the brush cleaning body and the brush part, and the brush cleaning body and the cleaning member are relative to each other. Since the brush portion is cleaned by rotating the cleaning member, the cleaning member can be cleaned in a short time. These effects improve the productivity of the substrate.

以下に説明する実施の形態においては、基板洗浄装置（以下、洗浄装置という）の一例として塗布、現像装置に設置されるタイプの洗浄装置について説明する。当該洗浄装置による洗浄工程を含むフォトリソグラフィープロセスの具体例については後述するが、本洗浄装置は例えば塗布、現像装置の出口付近に設置され、レジスト膜の形成された基板である半導体ウエハ（以下、ウエハという）の裏面を洗浄してから後続の露光装置へ向けて送り出す役割を果たす。   In the embodiments described below, a type of cleaning apparatus installed in a coating and developing apparatus will be described as an example of a substrate cleaning apparatus (hereinafter referred to as a cleaning apparatus). A specific example of a photolithography process including a cleaning process by the cleaning apparatus will be described later. This cleaning apparatus is installed near the exit of a coating and developing apparatus, for example, and is a semiconductor wafer (hereinafter, referred to as a resist film-formed substrate). It plays the role of cleaning the back surface of the wafer) and feeding it to the subsequent exposure apparatus.

初めに本実施の形態に係る洗浄装置の構造について図１〜図４を参照しながら説明する。図１は洗浄装置２の斜視図、図２はその平面図、図３及び図４は縦断面図を夫々示している。   First, the structure of the cleaning apparatus according to the present embodiment will be described with reference to FIGS. 1 is a perspective view of the cleaning device 2, FIG. 2 is a plan view thereof, and FIGS. 3 and 4 are longitudinal sectional views.

図１に示すように洗浄装置２は、塗布、現像装置内の搬送手段（後述する第２の受け渡しアームＤ２）から受け取ったウエハＷの裏面周縁部近傍を略水平に吸着保持する吸着パッド２０ａ，２０ｂと、この吸着パッド２０ａ，２０ｂからウエハＷを受け取ってウエハＷの裏面中央部を略水平に吸着保持する回転保持手段であるスピンチャック３と、ウエハＷの裏面を洗浄する洗浄部材５と、この洗浄部材５を洗浄するために用いられるブラシ洗浄体であるガラス基板６とを上面の開口したボックス状のアンダーカップ４３に取り付けた構造となっている。   As shown in FIG. 1, the cleaning device 2 includes a suction pad 20a for holding the vicinity of the peripheral edge of the back surface of the wafer W received from a transfer means (second delivery arm D2 described later) in the coating and developing device substantially horizontally. 20b, a spin chuck 3 that is a rotation holding means that receives the wafer W from the suction pads 20a and 20b and sucks and holds the center of the back surface of the wafer W substantially horizontally, and a cleaning member 5 that cleans the back surface of the wafer W; A glass substrate 6 that is a brush cleaning body used for cleaning the cleaning member 5 is attached to a box-shaped under cup 43 having an upper surface opened.

先ず、吸着パッド２０ａ，２０ｂについて説明する。図１に示すように洗浄装置１は２つの吸着パッド２０ａ，２０ｂを備え、２つの吸着パッド２０ａ，２０ｂはウエハＷ裏面の周縁近傍部を略平衡に支えて保持できるように配置されている。前記吸着パッド２０ａ，２０ｂは図示しない吸引管と接続されており、図１及び図２に示す吸着孔２８を介してウエハＷの裏面周縁部を吸着しながら保持する真空チャックとしての機能を備えている。図１に示すように夫々の吸着パッド２０ａ，２０ｂは細長い棒状のパット支持部２１ａ，２１ｂの略中央部に夫々取り付けられており、これら２本のパット支持部２１ａ，２１ｂの両端部が夫々２本の橋桁部２２ａ，２２ｂに取り付けられることによってパット支持部２１ａ，２１ｂと橋桁部２２ａ，２２ｂとからなる井桁２３が構成される。   First, the suction pads 20a and 20b will be described. As shown in FIG. 1, the cleaning apparatus 1 includes two suction pads 20a and 20b, and the two suction pads 20a and 20b are arranged so as to support and hold the vicinity of the periphery of the back surface of the wafer W in a substantially balanced manner. The suction pads 20a and 20b are connected to a suction pipe (not shown), and have a function as a vacuum chuck for holding and holding the peripheral edge of the back surface of the wafer W through the suction holes 28 shown in FIGS. Yes. As shown in FIG. 1, the respective suction pads 20a and 20b are respectively attached to the substantially central portions of the elongated rod-like pad support portions 21a and 21b, and the two end portions of the two pad support portions 21a and 21b are 2 respectively. By being attached to the bridge girder portions 22a and 22b, a well girder 23 comprising pad support portions 21a and 21b and bridge girder portions 22a and 22b is formed.

２本の橋桁部２２ａ，２２ｂの両端は、アンダーカップ４３の対向する２側壁（図１に向かって手前側の側壁と奥側の側壁）の外側にこれら側壁に沿って張設された２本のベルト２４ａ，２４ｂに夫々固定されている。夫々のベルト２４ａ，２４ｂは、２個１組からなる巻掛軸２５ａ，２５ｂに巻き掛けられており、各巻掛軸２５ａ，２５ｂは上述の２側壁と各々平行に設置された２枚の側板２６ａ，２６ｂに取り付けられている。巻掛軸２５ａの一つは駆動機構２７に接続されており、巻掛軸２５ａ，２５ｂやベルト２４ａ，２４ｂを介して橋桁２２ａ，２２ｂを動かして、既述の井桁２３全体を図１及び図２に示したＸ方向に自在に移動させることができるようになっている。   Two ends of the two bridge girder portions 22a and 22b are extended along the side walls on the outer side of the two opposite side walls (the side wall on the near side and the side wall on the back side in FIG. 1) of the under cup 43. The belts 24a and 24b are respectively fixed. Each of the belts 24a and 24b is wound around a pair of winding shafts 25a and 25b, and each of the winding shafts 25a and 25b is provided with two side plates 26a and 26b installed in parallel with the two side walls described above. Is attached. One of the winding shafts 25a is connected to the drive mechanism 27, and the bridge girders 22a and 22b are moved via the winding shafts 25a and 25b and the belts 24a and 24b, so that the entire well beam 23 described above is shown in FIGS. It can be moved freely in the indicated X direction.

また図１に示すように夫々の側板２６ａ，２６ｂは、その底面をスライダ２７ａとガイドレール２７ｂとからなる２組の昇降機構２７によって支えられ、洗浄装置１の図示しない筐体床面に固定されている。これらの昇降機構２７の一つには図示しない駆動手段である駆動機構が設けられており、この駆動機構によってスライダ２７ａをガイドレール２７ｂ内で昇降させることにより、既述の井桁２３全体を図中のＺ方向に昇降させることができるようになっている。   Further, as shown in FIG. 1, the bottom surfaces of the side plates 26a and 26b are supported by two sets of lifting mechanisms 27 including a slider 27a and a guide rail 27b, and are fixed to a casing floor surface (not shown) of the cleaning device 1. ing. One of these elevating mechanisms 27 is provided with a driving mechanism which is a driving means (not shown). By moving the slider 27a up and down within the guide rail 27b by this driving mechanism, the entire well beam 23 described above is shown in the drawing. It can be moved up and down in the Z direction.

また井桁２３上には、洗浄液の飛散を抑えるためのドーナツ状のアッパーカップ４１が跨設されている。このアッパーカップ４１の上面にはウエハＷより大口径の開口部４１ａが設けられており、この開口部４１ａを介して搬送手段と吸着パッド２０との間でウエハＷの受け渡しを行うことができるようになっている。なお、井桁２３上に跨設されたアッパーカップ４１は、図３に示すように井桁２３の動きに伴ってＸ方向とＺ方向とに移動するように構成されている。   A donut-shaped upper cup 41 for striking the scattering of the cleaning liquid is straddled on the well beam 23. An opening 41a having a larger diameter than the wafer W is provided on the upper surface of the upper cup 41 so that the wafer W can be transferred between the transfer means and the suction pad 20 through the opening 41a. It has become. In addition, the upper cup 41 straddled on the cross beam 23 is configured to move in the X direction and the Z direction in accordance with the movement of the cross beam 23 as shown in FIG.

次にスピンチャック３について説明する。スピンチャック３はウエハＷの裏面中央部を下方から支持する円板であり、略平行に配置された２つの吸着パッド２０ａ，２０ｂの中間に設置されている。図３に示すようにスピンチャック３は軸部３ｂを介して駆動機構（スピンチャックモータ）３３に接続されており、このスピンチャックモータ３３によって回転自在及び昇降自在に構成されている。またスピンチャック３も図示しない吸引管と接続されており、図１及び図２に示す吸着孔３ａを介してウエハＷを吸着しながら保持する真空チャックとしての機能を備えている。   Next, the spin chuck 3 will be described. The spin chuck 3 is a disk that supports the central portion of the back surface of the wafer W from below, and is installed in the middle of two suction pads 20a and 20b arranged substantially in parallel. As shown in FIG. 3, the spin chuck 3 is connected to a drive mechanism (spin chuck motor) 33 via a shaft portion 3 b, and is configured to be rotatable and movable up and down by the spin chuck motor 33. The spin chuck 3 is also connected to a suction tube (not shown), and has a function as a vacuum chuck that holds the wafer W while sucking it through the suction holes 3a shown in FIGS.

前記スピンチャック３の側方には、昇降機構３２ａと接続された３本の支持ピン３２がウエハＷの裏面を支持して昇降可能なように設けられており、これにより外部の搬送手段との協働作用によって搬送手段から吸着パッド２０ａ，２０ｂへ、またスピンチャック３から搬送手段へとウエハＷを受け渡しできる。   On the side of the spin chuck 3, three support pins 32 connected to an elevating mechanism 32 a are provided so as to be able to move up and down while supporting the back surface of the wafer W. The wafer W can be transferred from the transfer means to the suction pads 20a and 20b and from the spin chuck 3 to the transfer means by the cooperative action.

またスピンチャック３及び支持ピン３２の周囲には、これらの機器を取り囲む円筒体からなるエアナイフ３１が設置されている。このエアナイフ３１は円筒体の上端の周方向に沿って図示しない気体の噴射口が形成されており、この噴射口からウエハＷ裏面へ向けて気体を噴き出すことにより洗浄液を円筒体の外側へ吹き飛ばすようになっている。   An air knife 31 made of a cylindrical body surrounding these devices is installed around the spin chuck 3 and the support pins 32. The air knife 31 is formed with a gas injection port (not shown) along the circumferential direction of the upper end of the cylindrical body, and the cleaning liquid is blown off to the outside of the cylindrical body by blowing gas from the injection port toward the back surface of the wafer W. It has become.

次にウエハＷの裏面洗浄を行う洗浄部材５について説明する。図１及び図５に示すように前記洗浄部材５は例えば多数のプラスチック繊維を円柱状に束ねた構造からなるブラシ部５０と、このブラシ部５０を保持する基台５１と、この基台５１の下方を支持する支持体５２と、前記支持体５２に接続され、当該支持体５２を介して前記ブラシ部５０を周方向に回転させる回転手段である駆動機構５３とから構成されている。また前記基台５１は支持体５２に対して着脱自在に構成されている。なお、前記ブラシ部５０としてはプラスチック繊維の他にナイロン繊維等を用いてもよく、さらに多孔質で伸縮性のある円柱状のスポンジ例えばＰＶＣスポンジ、ウレタンスポンジ等を用いた構造であってもよい。このような構造にあるブラシ部５０の直径Ｒは例えば４５０ｍｍ以下、この例では５０ｍｍであり、その上面の略中央には洗浄液を吐出するための直径ｒが例えば５ｍｍの吐出孔５４が形成されている。また図５に示すように前記支持体５１の内部には洗浄液が通流する通流管５５が設けられており、前記通流管５５の他端側にはバルブＶ１及び洗浄液の温度を調整する温度調整部５６を介して洗浄液を供給する洗浄液供給源５７が接続されている。洗浄液としては、脱イオン水（ＤＩＷ）、ＤＩＷとオゾン水との混合液、あるいはＤＩＷとアルカリ液との混合液等が挙げられる。この実施形態では吐出孔５４、通流管５５、バルブＶ１、温度調整部５６及び洗浄液供給源５７が洗浄液供給手段に相当する。   Next, the cleaning member 5 for cleaning the back surface of the wafer W will be described. As shown in FIGS. 1 and 5, the cleaning member 5 includes, for example, a brush portion 50 having a structure in which a large number of plastic fibers are bundled in a columnar shape, a base 51 for holding the brush portion 50, and the base 51. It comprises a support body 52 that supports the lower part, and a drive mechanism 53 that is connected to the support body 52 and is a rotating means that rotates the brush portion 50 in the circumferential direction via the support body 52. The base 51 is configured to be detachable from the support body 52. The brush portion 50 may be made of nylon fibers or the like in addition to plastic fibers, and may have a structure using a porous and stretchable cylindrical sponge such as PVC sponge or urethane sponge. . The brush portion 50 having such a structure has a diameter R of, for example, 450 mm or less, in this example, 50 mm, and a discharge hole 54 having a diameter r of, for example, 5 mm for discharging the cleaning liquid is formed at the approximate center of the upper surface. Yes. Further, as shown in FIG. 5, a flow pipe 55 through which the cleaning liquid flows is provided inside the support 51, and the valve V1 and the temperature of the cleaning liquid are adjusted at the other end of the flow pipe 55. A cleaning liquid supply source 57 that supplies the cleaning liquid is connected via the temperature adjustment unit 56. Examples of the cleaning liquid include deionized water (DIW), a mixed liquid of DIW and ozone water, or a mixed liquid of DIW and alkaline liquid. In this embodiment, the discharge hole 54, the flow pipe 55, the valve V1, the temperature adjustment unit 56, and the cleaning liquid supply source 57 correspond to the cleaning liquid supply means.

また前記駆動機構５３の下面には既述の洗浄部材５を支持するための支持部４６が取り付けられており、この支持部４６はウエハＷや橋桁部２２ｂと干渉しないようにＬ字型に屈曲した形状となっている。前記支持部４６の基端は、図１においてスピンチャック３の設置されている方向から洗浄部材５を見て奥側の側壁に沿って張設されたベルト５８に固定されている。前記ベルト５８は２個１組からなる巻掛軸５９に巻き掛けられており、これらの巻掛軸５９は上述の奥側の側壁外面に取り付けられている。前記巻掛軸５９の一方は駆動機構６０に接続されており、ベルト５８及び支持部４６を介して洗浄部材５を図１及び図２に示したＹ方向に自在に移動させることができる。   A support portion 46 for supporting the above-described cleaning member 5 is attached to the lower surface of the drive mechanism 53, and the support portion 46 is bent in an L shape so as not to interfere with the wafer W or the bridge girder portion 22b. It has a shape. The base end of the support portion 46 is fixed to a belt 58 that is stretched along the side wall on the back side when the cleaning member 5 is viewed from the direction in which the spin chuck 3 is installed in FIG. The belt 58 is wound around a set of two winding shafts 59, and these winding shafts 59 are attached to the outer surface of the back side wall described above. One of the winding shafts 59 is connected to the drive mechanism 60, and the cleaning member 5 can be freely moved in the Y direction shown in FIGS. 1 and 2 via the belt 58 and the support portion 46.

次に既述の洗浄部材５を洗浄するために用いられるガラス基板６について説明する。図１及び図４に示すようにガラス基板６は、前記アッパーカップ４１の周辺近傍に設けられた円筒体の基台６３の上に設けられている。前記基台６３は両端部が夫々２本の橋桁部２２ａ，２２ｂに平行に取り付けられた基台支持部６１ａ，６１ｂに設けられている。前記基台支持部６１ａと基台支持台６１ｂとの離間距離は、昇降機構２７によって橋桁部２２ａ，２２ｂを下降させてブラシ部５０の上面をガラス基板６２の裏面に押し当てる際に、前記ブラシ部５０と基台支持部６１ａ，６ａｂとが接触しない程度の距離である。また前記ガラス基板６の上方側には、紫外線を照射する紫外線ランプ６２が設けられている。後述するように前記ブラシ部５０の洗浄を何度も行うと、ガラス基板６の裏面はブラシ部５０に付着していた有機物等により汚染されて当該裏面が疎水化し、濡れ性が悪くなってブラシ部５０の消耗が激しくなる。そしてこのブラシ部５０の消耗によりパーティクルが発生するため、前記ガラス基板６の上方側から当該ガラス基板６の表面全体に紫外線を照射し、当該裏面に付着している有機物等を除去している。   Next, the glass substrate 6 used for cleaning the above-described cleaning member 5 will be described. As shown in FIGS. 1 and 4, the glass substrate 6 is provided on a cylindrical base 63 provided in the vicinity of the periphery of the upper cup 41. The said base 63 is provided in the base support parts 61a and 61b attached in parallel to the two bridge girder parts 22a and 22b, respectively. The separation distance between the base support 61a and the base support 61b is such that the brush girder 22a, 22b is lowered by the lifting mechanism 27 and the upper surface of the brush portion 50 is pressed against the back surface of the glass substrate 62. The distance is such that the portion 50 does not contact the base support portions 61a and 6ab. An ultraviolet lamp 62 for irradiating ultraviolet rays is provided above the glass substrate 6. As will be described later, when the brush portion 50 is washed many times, the back surface of the glass substrate 6 is contaminated by organic matter or the like adhering to the brush portion 50 so that the back surface becomes hydrophobic and wettability is deteriorated. The consumption of the part 50 becomes intense. Since particles are generated by the consumption of the brush portion 50, the entire surface of the glass substrate 6 is irradiated with ultraviolet rays from the upper side of the glass substrate 6 to remove organic substances and the like attached to the back surface.

この他、図３に示すようにアンダーカップ４３の底部には、アンダーカップ４３内に溜まった洗浄液を排出するためのドレイン管４４と、洗浄装置２内の気流を排気するための２つの排気管４５とが設けられている。前記排気管４５はアンダーカップ４３の底部に溜まった洗浄液が排気管４５へ流れ込むのを防ぐため、アンダーカップ４３の底面から上方へと延伸されていると共に、上方から滴り落ちてきた洗浄液が排気管４５に直接入らないように、エアナイフ３１の周囲に取り付けられたリング状のカバーをなすインナーカップ４２によって覆われている。   In addition, as shown in FIG. 3, at the bottom of the under cup 43, there are a drain pipe 44 for discharging the cleaning liquid accumulated in the under cup 43 and two exhaust pipes for exhausting the airflow in the cleaning device 2. 45 is provided. The exhaust pipe 45 is extended upward from the bottom surface of the under cup 43 in order to prevent the cleaning liquid accumulated at the bottom of the under cup 43 from flowing into the exhaust pipe 45, and the cleaning liquid dripped from above is exhaust pipe. The inner cup 42 is covered with a ring-shaped cover that is attached around the air knife 31 so as not to enter the 45 directly.

また前記洗浄装置２は制御部９を備えている。この制御部９に関して図６を参照しながら説明する。図６において９０はバスであり、このバス９０にはウエハ洗浄プログラム９１、ブラシ洗浄プログラム９２、ＣＰＵ９３及び入力手段９４などが接続されており、図６ではこれらを機能的にブロック化して表している。   The cleaning device 2 includes a control unit 9. The controller 9 will be described with reference to FIG. In FIG. 6, reference numeral 90 denotes a bus, and a wafer cleaning program 91, a brush cleaning program 92, a CPU 93, an input means 94, and the like are connected to the bus 90. In FIG. .

前記ウエハ洗浄プログラム９１は、後述するように外部の搬送装置から受け取ったウエハＷを吸着パット２０ａ，２０ｂとスピンチャック３との間で受け渡したり、ウエハＷの裏面を洗浄部材５で洗浄したりするために各駆動部２９、５３、６０、昇降機構２７、バルブＶ１、温度調整部５６など対して動作指令を出力する。   As will be described later, the wafer cleaning program 91 transfers the wafer W received from an external transfer device between the suction pads 20a and 20b and the spin chuck 3, and cleans the back surface of the wafer W with the cleaning member 5. Therefore, an operation command is output to each of the drive units 29, 53, 60, the elevating mechanism 27, the valve V1, the temperature adjusting unit 56, and the like.

前記ブラシ洗浄プログラム９２は、後述するようにウエハＷを洗浄する領域とブラシ部５０が洗浄される領域との間で洗浄部材５を移動したり、ガラス基板７の裏面にブラシ部５０の上面を押し当てて当該ブラシ部５０を洗浄したりするために各駆動部２９、５３、６０、昇降機構２７、バルブＶ１、温度調整部５６、紫外線ランプ６２など対して動作指令を出力する。   As will be described later, the brush cleaning program 92 moves the cleaning member 5 between an area where the wafer W is cleaned and an area where the brush section 50 is cleaned, or the upper surface of the brush section 50 is placed on the back surface of the glass substrate 7. In order to clean the brush unit 50 by pressing, an operation command is output to each of the driving units 29, 53, 60, the elevating mechanism 27, the valve V1, the temperature adjusting unit 56, the ultraviolet lamp 62, and the like.

前記入力手段９４は、種々の入力操作を行うキーボート及びマウスと、液晶画面またはＣＴＲ画面などのソフトスイッチとの組み合わせからなり、後述するようにブラシ洗浄モードの選択を行う。   The input means 94 is a combination of a keyboard and mouse for performing various input operations and a soft switch such as a liquid crystal screen or a CTR screen, and selects a brush cleaning mode as will be described later.

これらプログラム９１、９２は記憶媒体例えばフレキシブルディスク（ＦＤ）、メモリーカード、コンパクトディスク（ＣＤ）、マグネットオプティカルデスク（ＭＯ）、メモリーカード等の記憶手段に格納された状態でプログラム格納部に格納される。   These programs 91 and 92 are stored in the program storage unit in a state where they are stored in a storage means such as a storage medium such as a flexible disk (FD), a memory card, a compact disk (CD), a magnetic optical desk (MO), or a memory card. .

以上に説明した構成に基づいて、ブラシ部５０を洗浄する動作について図７〜図９を参照しながら説明するが、この説明の前にウエハＷの裏面を洗浄する動作について簡単に説明しておく。先ず、例えば馬蹄形状の搬送手段（第２の受け渡しアームＤ２）から３本の支持ピン３２にウエハＷが受け渡され、その後支持ピン３２が下降して吸着パット２０ａ，２０ｂにウエハＷが受け渡される。この後吸着パット２０は、裏面からブラシ部５０を押し当てても動かないようにウエハＷの裏面における中心領域を挟んで対向する２箇所部位を吸着保持し、ウエハＷを保持したまま所定の位置まで搬送し、ウエハＷの裏面中心領域とブラシ部５０とを対向させ、次いで、吸着パット２０ａ，２０ｂを下降させてウエハＷの裏面の中心領域をブラシ部５０の上面に押し当てる。次いで、エアナイフ３１を作動させてスピンチャック３の表面に洗浄液が廻り込んで付着するのを防止した後、ブラシ部５０の上面の吐出孔５４より洗浄液を供給すると共にブラシ部５０を回転させてウエハＷの裏面中心領域の洗浄を開始する。この洗浄は、図２に示すように駆動機構２９によるウエハＷのＸ方向への移動と駆動機構６０による洗浄部材５のＹ方向への移動との組み合わせにより進行する。   Based on the configuration described above, the operation for cleaning the brush unit 50 will be described with reference to FIGS. 7 to 9. Before this description, the operation for cleaning the back surface of the wafer W will be briefly described. . First, for example, the wafer W is transferred to the three support pins 32 from the horseshoe-shaped transfer means (second transfer arm D2), and then the support pins 32 are lowered to transfer the wafer W to the suction pads 20a and 20b. It is. Thereafter, the suction pad 20 sucks and holds two portions facing each other across the central region on the back surface of the wafer W so that the brush pad 50 does not move even if the brush portion 50 is pressed from the back surface, and holds the wafer W at a predetermined position. The back surface central region of the wafer W and the brush portion 50 are made to face each other, and then the suction pads 20 a and 20 b are lowered to press the central region of the back surface of the wafer W against the upper surface of the brush portion 50. Next, after operating the air knife 31 to prevent the cleaning liquid from flowing around and adhering to the surface of the spin chuck 3, the cleaning liquid is supplied from the discharge hole 54 on the upper surface of the brush section 50 and the brush section 50 is rotated to rotate the wafer. The cleaning of the back center region of W is started. This cleaning proceeds by a combination of movement of the wafer W in the X direction by the drive mechanism 29 and movement of the cleaning member 5 in the Y direction by the drive mechanism 60 as shown in FIG.

ウエハＷの裏面中心領域の洗浄を終えたら、吸着パット２０ａ，２０ｂを移動させてスピンチャック３の上方にウエハＷ中心部を位置させ、次に吸着パット２０ａ，２０ｂからスピンチャック３へのウエハＷの受け渡しを行う。ウエハＷを受け渡されたスピンチャック３は、吸着パット２０ａ，２０ｂと略同じ高さでウエハＷを吸着保持するので、前記ブラシ部５０はウエハＷに押し当てられた状態となる。続いてブラシ部５０の上面の吐出孔５４より洗浄液を供給すると共に、ブラシ部５０を回転させてウエハＷの裏面外周領域の洗浄を開始する。この洗浄は、図２に示すようにスピンチャックの回転と駆動機構６０による洗浄部材５のＹ方向への移動との組み合わせにより進行する。   When the cleaning of the center area of the back surface of the wafer W is completed, the suction pads 20a and 20b are moved to position the central portion of the wafer W above the spin chuck 3, and then the wafer W from the suction pads 20a and 20b to the spin chuck 3 is moved. Delivery of. The spin chuck 3 that has transferred the wafer W sucks and holds the wafer W at substantially the same height as the suction pads 20a and 20b, so that the brush portion 50 is pressed against the wafer W. Subsequently, the cleaning liquid is supplied from the discharge hole 54 on the upper surface of the brush unit 50, and the brush unit 50 is rotated to start cleaning the outer peripheral area of the back surface of the wafer W. This cleaning proceeds by a combination of rotation of the spin chuck and movement of the cleaning member 5 in the Y direction by the drive mechanism 60 as shown in FIG.

ウエハＷの裏面外周領域の洗浄を終えたら、スピンチャック３を所定の高さ位置まで上昇させ、この位置でウエハＷを高速で回転させて、振り切り乾燥いわゆるスピン乾燥を行い、ウエハＷの裏面を乾燥させる。ここでウエハＷの裏面中心領域の洗浄からスピン乾燥までの工程を１プロセスとすると、このプロセスを２０〜５０回行った後、ブラシ部５０を洗浄する動作に移ることになる。以上のウエハＷの裏面を洗浄するプロセスは、ウエハ洗浄プログラム９１により実行される。   When the cleaning of the outer peripheral area of the back surface of the wafer W is completed, the spin chuck 3 is raised to a predetermined height position, the wafer W is rotated at this position at high speed, and the spin dry and so-called spin drying are performed. dry. Here, assuming that the process from the cleaning of the central region of the back surface of the wafer W to the spin drying is one process, after performing this process 20 to 50 times, the operation moves to the operation of cleaning the brush unit 50. The above process for cleaning the back surface of the wafer W is executed by the wafer cleaning program 91.

続いてブラシ部５０を洗浄する動作について説明する。ウエハＷを所定枚数洗浄すると図示しないアラーム発生部からアラームが発せられ、このアラームに基づいて例えばオペレータが入力手段９４によりブラシ洗浄モードを選択する。ブラシ洗浄モードを選択したときにはまだ洗浄ブラシ５０はウエハＷを洗浄する領域にあり、当該洗浄ブラシ５０は次のようにしてウエハＷの洗浄領域からブラシ部５０の洗浄領域へ移動される。先ずスピン乾燥を行った後、昇降機構２７によってアッパーカップ４１の下側周面が前記ブラシ部５０の上面にぶつからない程度の高さ位置まで井桁２３を上昇させる。次に、図２に示すように駆動機構６０によって洗浄部材５を基台支持部６１ａと基台支持部６１ｂとで挟まれる領域Ｓに移動させる。洗浄部材５を前記領域Ｓに移動させた時に、ブラシ部５０が基台６３で囲まれる領域内に無い場合には、駆動機構２９によって基台６３を移動させて、ブラシ部５０を基台６３で囲まれる領域内に位置させる。   Next, an operation for cleaning the brush unit 50 will be described. When a predetermined number of wafers W are cleaned, an alarm is generated from an alarm generation unit (not shown), and based on this alarm, for example, the operator selects the brush cleaning mode by the input means 94. When the brush cleaning mode is selected, the cleaning brush 50 is still in the region for cleaning the wafer W, and the cleaning brush 50 is moved from the cleaning region for the wafer W to the cleaning region for the brush unit 50 as follows. First, after spin drying, the elevating mechanism 27 raises the well 23 to a height position where the lower peripheral surface of the upper cup 41 does not hit the upper surface of the brush portion 50. Next, as shown in FIG. 2, the cleaning member 5 is moved to the region S sandwiched between the base support part 61 a and the base support part 61 b by the drive mechanism 60. When the cleaning member 5 is moved to the region S and the brush unit 50 is not in the region surrounded by the base 63, the base 63 is moved by the drive mechanism 29, and the brush unit 50 is moved to the base 63. It is located in the area surrounded by.

このようにして前記洗浄部材５をウエハＷの洗浄領域からブラシ部５０の洗浄領域まで移動させた後、図７（ａ）に示すように昇降機構２７によってブラシ部５０とガラス基板６との間の距離が所定の距離となるように基台６３を下降させる。その後、図７（ｂ）に示すようにブラシ部５０の上面に形成された吐出孔５４から所定の流量例えば４００ｃｃ／ｍｉｎで洗浄液Ｒを吐出し、ガラス基板６の裏面を濡らすと共に、駆動機構５３によってブラシ部５０を予め設定した回転数で回転させる。なお、前記吐出孔５４から吐出する洗浄液Ｒは前記温度調整部５６によって所定の温度例えば３０℃に調整されている。しかる後、図７（ｃ）に示すように昇降機構２７によって基台６３を下降させて、ブラシ部５０の上面にガラス基板６の裏面を接触させる。さらに基台６３を下降させて予め設定した押圧力でブラシ部５０をガラス基板６に押し当てるように調整する。   After the cleaning member 5 is moved from the cleaning area of the wafer W to the cleaning area of the brush portion 50 in this way, the lifting mechanism 27 moves the brush portion 50 and the glass substrate 6 between them as shown in FIG. The base 63 is lowered so that the distance becomes a predetermined distance. Thereafter, as shown in FIG. 7B, the cleaning liquid R is discharged at a predetermined flow rate, for example, 400 cc / min from the discharge hole 54 formed on the upper surface of the brush portion 50 to wet the back surface of the glass substrate 6, and the drive mechanism 53. Thus, the brush unit 50 is rotated at a preset rotation speed. The cleaning liquid R discharged from the discharge hole 54 is adjusted to a predetermined temperature, for example, 30 ° C. by the temperature adjusting unit 56. Thereafter, as shown in FIG. 7C, the elevating mechanism 27 lowers the base 63 to bring the back surface of the glass substrate 6 into contact with the upper surface of the brush portion 50. Further, the base 63 is lowered and adjusted so that the brush portion 50 is pressed against the glass substrate 6 with a preset pressing force.

図８はブラシ部５０が洗浄される様子を示す図である。ガラス基板６の裏面に吐出孔５４から４００ｃｃ／ｍｉｎで洗浄液Ｒを吐出させると共に、ブラシ部５０を２００ｒｐｍで回転させながら当該ブラシ部５０の上面を例えば１Ｎ／ｃｍ２で押し当てると、ガラス基板６とブラシ部５０との間に介在する洗浄液Ｒに圧力が生じ、ブラシ部５０が洗浄液Ｒの上に浮いた状態となる。この状態はブラシ部５０とガラス基板６との潤滑状態を示すストライベック線図（図９参照）において摩擦係数μが最も小さい値Ｐ＜０．０１を含む曲線の腹部分に相当する領域である弾性流体潤滑のことをいい、この弾性流体潤滑の状態でブラシ部５０が洗浄される。つまりブラシ部５０とガラス基板６との間に洗浄液Ｒが介在した状態でブラシ部５０が洗浄される。なお、図９中の縦軸は摩擦係数μを示しており、横軸は（洗浄液Ｒの粘度×ブラシ部５０の回転速度）／押し当て力（ηＶ／Ｆ）を示している。 FIG. 8 is a diagram showing how the brush unit 50 is cleaned. When the cleaning liquid R is discharged from the discharge hole 54 to the back surface of the glass substrate 6 at 400 cc / min and the upper surface of the brush portion 50 is pressed at, for example, 1 N / cm 2 while rotating the brush portion 50 at 200 rpm, the glass substrate 6 A pressure is generated in the cleaning liquid R interposed between the brush part 50 and the brush part 50 floats on the cleaning liquid R. This state is a region corresponding to the antinode portion of the curve including the value P <0.01 where the friction coefficient μ is the smallest in the Stribeck diagram (see FIG. 9) showing the lubrication state between the brush portion 50 and the glass substrate 6. This refers to elastohydrodynamic lubrication, and the brush portion 50 is cleaned in this elastohydrodynamic lubrication state. That is, the brush part 50 is cleaned with the cleaning liquid R interposed between the brush part 50 and the glass substrate 6. 9, the vertical axis represents the friction coefficient μ, and the horizontal axis represents (viscosity of cleaning liquid R × rotational speed of brush unit 50) / pressing force (ηV / F).

ここで弾性流体潤滑の範囲について具体的に述べると最も腹部分の摩擦係数Ｐにおける横軸の（洗浄液Ｒの粘度×ブラシ部５０の回転速度）／押し当て力をＱとした場合、弾性流体潤滑の範囲はｋＱ≦Ｑ＜ｌＱ（Ｑ＝０．６、ｋ＝０．２、ｌ＝２）であり、この範囲はブラシ部５０とガラス基板６とであればブラシ部材５０の回転速度Ｖは７０ｒｐｍ〜５００ｒｐｍとなる。つまりストライベック線図において弾性流体潤滑が得られる回転数とは、ストライベック線図における摩擦係数の最小値が得られる回転数だけに限られるものではない。装置を組むときには、摩擦係数の最小値が得られるようにパラメータを設定することになるが、実際には摩擦係数は当該最小値よりも少し大きくなる場合が多いと考えられる。弾性流体潤滑とは、例えば自動車が濡れている道路を走行したときにタイヤと道路との摩擦がほとんど無くなり、ブレーキをかけてもタイヤが道路を滑る状態に相当する。従って本発明において「弾性流体潤滑が得られる回転数」とは、このような作用が発揮されている回転数を指すものである。   Here, the range of elastic fluid lubrication will be specifically described. When the horizontal axis (viscosity of cleaning liquid R × rotational speed of brush portion 50) / pressing force is Q, the friction coefficient P of the most abdomen is expressed as elastic fluid lubrication. Is in the range of kQ ≦ Q <lQ (Q = 0.6, k = 0.2, l = 2). If the range is the brush portion 50 and the glass substrate 6, the rotational speed V of the brush member 50 is 70 rpm to 500 rpm. That is, the rotational speed at which elastohydrodynamic lubrication is obtained in the Stribeck diagram is not limited to the rotational speed at which the minimum value of the friction coefficient in the Stribeck diagram is obtained. When assembling the apparatus, parameters are set so that the minimum value of the friction coefficient can be obtained. In practice, however, it is considered that the friction coefficient is often slightly larger than the minimum value. The elastohydrodynamic lubrication corresponds to a state in which, for example, when a vehicle travels on a wet road, there is almost no friction between the tire and the road, and the tire slides on the road even when a brake is applied. Accordingly, in the present invention, “the number of rotations at which elastohydrodynamic lubrication is obtained” refers to the number of rotations in which such an action is exhibited.

前記ブラシ部５０を前記ガラス基板６に所定時間例えば１０秒間押し当てた後、図７（ｄ）に示すように昇降機構２７によって基台６３を所定の高さ位置まで上昇させて、前記ガラス基板６から前記ブラシ部５０を離す。そして図７（ｂ）〜図７（ｄ）を用いて説明した一連の動作を複数回例えば５回繰り返した後、洗浄液Ｒの供給及びブラシ部５０の回転を止めて、ブラシ部５０の洗浄が終わる。   After the brush portion 50 is pressed against the glass substrate 6 for a predetermined time, for example, 10 seconds, the base 63 is raised to a predetermined height position by the elevating mechanism 27 as shown in FIG. The brush part 50 is separated from 6. Then, after repeating the series of operations described with reference to FIGS. 7B to 7D a plurality of times, for example, five times, the supply of the cleaning liquid R and the rotation of the brush portion 50 are stopped, and the brush portion 50 is cleaned. End.

一方、裏面の洗浄処理が終わったウエハＷは、スピンチャック３から支持ピン３２に受け渡され、その後支持ピン３２と搬送手段との協働作用によって搬送手段に受け渡される。そしてこのウエハＷは後続の露光装置へ向けて送り出され、未処理のウエハＷが洗浄装置２に搬入されることになる。   On the other hand, the wafer W after the back surface cleaning process is transferred from the spin chuck 3 to the support pins 32 and then transferred to the transfer means by the cooperative action of the support pins 32 and the transfer means. Then, the wafer W is sent out to the subsequent exposure apparatus, and the unprocessed wafer W is carried into the cleaning apparatus 2.

ブラシ部５０の洗浄が終わった後、昇降機構２７によってアッパーカップ４１の下側周面が前記ブラシ部５０の上面にぶつからない程度の高さ位置まで井桁２３を上昇させ、駆動機構６０によって洗浄部材５をウエハＷの洗浄領域まで移動させる。そして洗浄装置２に新たに搬入されたウエハＷに対して既述と同様にして裏面洗浄が開始される。以上のブラシ部５０を洗浄するプロセスは、ブラシ浄プログラム９２により実行される。   After the cleaning of the brush portion 50 is finished, the elevating mechanism 27 raises the well beam 23 to a position where the lower peripheral surface of the upper cup 41 does not hit the upper surface of the brush portion 50, and the driving mechanism 60 cleans the cleaning member. 5 is moved to the cleaning region of the wafer W. Then, the back surface cleaning is started in the same manner as described above for the wafer W newly carried into the cleaning apparatus 2. The above-described process for cleaning the brush unit 50 is executed by the brush cleaning program 92.

なお、ブラシ部５０の洗浄を開始するにあたって、上述の形態に限られずウエハＷを所定枚数洗浄すると自動的にブラシ洗浄モードが選択されるように前記ブラシ洗浄プログラム９２が構成されていてもよい。   Note that the brush cleaning program 92 may be configured so that the brush cleaning mode is automatically selected when a predetermined number of wafers W are cleaned when the cleaning of the brush unit 50 is started.

またブラシ部材５０を交換する場合には、使用済みのブラシ部５０を基台５１を介して支持体５２から取り外し、そして未使用のブラシ部５０を基台５１を介して当該支持体５２に取り付けた後、例えばオペレータが入力手段９４によりブラシ洗浄モードを選択し、既述と同様にしてブラシ部５０の洗浄が行われることになる。   When the brush member 50 is replaced, the used brush part 50 is removed from the support body 52 via the base 51, and the unused brush part 50 is attached to the support body 52 via the base 51. Thereafter, for example, the operator selects the brush cleaning mode by the input means 94, and the brush unit 50 is cleaned in the same manner as described above.

また前記ブラシ部５０による洗浄回数を重ねていくと、ガラス基板６の裏面はブラシ部５０に付着していた有機物等により次第に汚染されて当該裏面が疎水化し、濡れ性が悪くなってくる。このためブラシ部５０の洗浄回数が予め設定した回数になると、ブラシ部５０がウエハＷの裏面を洗浄しているときに、前記紫外線ランプ６２からガラス基板６に向けて紫外線を照射し、当該裏面に付着している有機物等を除去して親水化させる処理が行われる。この処理を行うステップはブラシ洗浄プログラム９２のステップに含まれている。   Further, as the number of times of cleaning by the brush unit 50 is increased, the back surface of the glass substrate 6 is gradually contaminated by organic matter or the like adhering to the brush unit 50, and the back surface becomes hydrophobic, resulting in poor wettability. For this reason, when the number of times of cleaning the brush unit 50 becomes a preset number of times, when the brush unit 50 is cleaning the back surface of the wafer W, the UV lamp 62 irradiates the glass substrate 6 with ultraviolet rays, and the back surface The organic substance adhering to the surface is removed to make it hydrophilic. The step of performing this process is included in the step of the brush cleaning program 92.

上述の実施の形態によれば、ウエハＷを洗浄する領域でウエハＷを洗浄した洗浄部材５をガラス基板６によりブラシ部５０を洗浄する領域へ移動させて、この領域で当該ブラシ部５０を洗浄しているので、ブラシ部５０を洗浄するためにウエハの洗浄処理を止めてダミーウエハを流すといった作業を行わなくてよく、洗浄装置２に流れてくるウエハＷを止めずに連続して洗浄処理することができる。また洗浄部材５のブラシ部５０の洗浄では、ブラシ部５０の上面に形成された吐出孔５４から所定の流量で洗浄液Ｒを吐出させると共に、前記ブラシ部５０を回転させながら当該ブラシ部５０を予め設定した押圧力でガラス基板６に押し当ててブラシ部５０を洗浄しているので、ブラシ部５０の洗浄を短時間で行うことができる。これらの効果によりウエハの生産性が向上する。   According to the above-described embodiment, the cleaning member 5 that cleaned the wafer W in the region where the wafer W is cleaned is moved to the region where the brush unit 50 is cleaned by the glass substrate 6, and the brush unit 50 is cleaned in this region. Therefore, it is not necessary to stop the wafer cleaning process and flow the dummy wafer in order to clean the brush unit 50, and the wafer W flowing to the cleaning apparatus 2 is continuously cleaned without stopping. be able to. Further, in cleaning the brush part 50 of the cleaning member 5, the cleaning liquid R is discharged at a predetermined flow rate from the discharge hole 54 formed on the upper surface of the brush part 50, and the brush part 50 is moved in advance while rotating the brush part 50. Since the brush part 50 is cleaned by being pressed against the glass substrate 6 with the set pressing force, the brush part 50 can be cleaned in a short time. These effects improve wafer productivity.

また上述の実施の形態では、ブラシ部５０とガラス基板６との潤滑状態を示すストライベック線図において弾性流体潤滑が得られる回転数、この実施形態では７０ｒｐｍ〜５００ｒｐｍの回転速度Ｖでブラシ部５０を回転させているので、つまりブラシ部５０とガラス基板６との間に洗浄液Ｒが介在した状態で当該ブラシ部５０が洗浄されるので、ブラシ部５０とガラス基板６とが擦れてブラシ部５０が損傷するといったおそれがない。そのためブラシ部５０の使用寿命が長くなる。   Further, in the above-described embodiment, the brush portion 50 is rotated at a rotational speed at which elastohydrodynamic lubrication is obtained in the Stribeck diagram showing the lubrication state between the brush portion 50 and the glass substrate 6, in this embodiment at a rotational speed V of 70 rpm to 500 rpm. Is rotated, that is, with the cleaning liquid R interposed between the brush portion 50 and the glass substrate 6, the brush portion 50 is cleaned, and the brush portion 50 and the glass substrate 6 are rubbed to rub the brush portion 50. There is no risk of damage. Therefore, the service life of the brush part 50 becomes long.

なお上述の実施の形態では、昇降機構２７によってブラシ部５０の上面をガラス基板６３の底面に押し当てているが、ブラシ部５０を周方向に回転させる駆動機構５３に、支持体５１を介してブラシ部５０を上下に移動可能な機能を持たせ、この駆動機構５３によってブラシ部５０の上面をガラス基板６３の底面に押し当てるようにしてもよい。   In the above-described embodiment, the upper and lower mechanisms 27 press the upper surface of the brush portion 50 against the bottom surface of the glass substrate 63, but the drive mechanism 53 that rotates the brush portion 50 in the circumferential direction is provided with the support 51. The brush unit 50 may be provided with a function of moving up and down, and the drive mechanism 53 may press the upper surface of the brush unit 50 against the bottom surface of the glass substrate 63.

また上述の実施の形態では、ブラシ部５０の上面の略中央に形成された吐出孔５４から洗浄液Ｒを吐出させてガラス基板６３の下面を濡らしているが、この構成に限られずガラス基板６３の下面の略中央部に吐出孔を形成し、この吐出孔から洗浄液Ｒを吐出させてガラス基板６３の下面を濡らすように構成してもよい。   In the above-described embodiment, the cleaning liquid R is discharged from the discharge hole 54 formed substantially at the center of the upper surface of the brush portion 50 to wet the lower surface of the glass substrate 63. A discharge hole may be formed in a substantially central portion of the lower surface, and the cleaning liquid R may be discharged from the discharge hole to wet the lower surface of the glass substrate 63.

次に本発明の他の実施の形態について説明する。この形態では、図１０及び図１１に示すようにガラス基板８５を、洗浄部材５がウエハＷを洗浄する領域と当該領域から離れた待機領域との間で移動させる他は上述の実施の形態で説明した洗浄装置２と全く同じ構成になる。   Next, another embodiment of the present invention will be described. In this embodiment, as shown in FIGS. 10 and 11, the glass substrate 85 is moved between the region where the cleaning member 5 cleans the wafer W and the standby region away from the region, in the above-described embodiment. It becomes the completely same structure as the washing | cleaning apparatus 2 demonstrated.

この形態の構成について詳述すると、図１０及び図１１中の８０は前記橋桁部２２ｂと平行に設けられたレール部であり、このレール部８０の両端は前記アンダーカップ４３の上面に夫々固定されている。なお、この例では前記レール部８０は洗浄部材５でウエハＷの裏面中心領域を洗浄する際に井桁２３を所定の位置まで移動させた時、橋桁２２ｂとぶつからない位置に設置してある。前記レール部８０にはガラス支持体８１を介してガラス基板８２をＹ軸方向に移動させる移動機構８３が設けられている。前記ガラス支持体８１の基端側にはガイド軸８４を介して当該ガラス支持体８１を上下に駆動させる駆動部８５が設けられている。また前記ガラス支持体８１の先端側にはガイド軸８６を介してガラス基板８２を上下に駆動させる駆動部８７が設けられている。前記駆動部８５は駆動部２７によって井桁２３を上昇させる際に、井桁２３がガラス支持体８１に当たらないようにガラス支持体８１を所定の高さ位置まで上昇させるために設けられている。   The configuration of this embodiment will be described in detail. 80 in FIGS. 10 and 11 is a rail portion provided in parallel with the bridge girder portion 22b, and both ends of the rail portion 80 are fixed to the upper surface of the under cup 43, respectively. ing. In this example, the rail portion 80 is installed at a position where it does not collide with the bridge girder 22b when the well 23 is moved to a predetermined position when the cleaning member 5 cleans the center area of the back surface of the wafer W. The rail portion 80 is provided with a moving mechanism 83 that moves the glass substrate 82 in the Y-axis direction via the glass support 81. A drive unit 85 that drives the glass support 81 up and down via a guide shaft 84 is provided on the base end side of the glass support 81. A driving unit 87 for driving the glass substrate 82 up and down via a guide shaft 86 is provided on the distal end side of the glass support 81. The drive unit 85 is provided to raise the glass support 81 to a predetermined height position so that the cross beam 23 does not hit the glass support 81 when the drive beam 27 is raised by the drive unit 27.

この形態における作用について述べると、既述のようにして洗浄部材５によりウエハＷを洗浄した後、移動機構８３によってガラス基板８２を移動させて当該ガラス基板８２の下面と洗浄部材５のブラシ部５０とを対向させる（図１１参照）。続いて駆動部８７によってガイド軸８６を介してガラス基板８２を下降させて、ブラシ部５０とガラス基板８２との間の距離が所定の距離となるようにする。その後、ブラシ部５０の上面に形成された吐出孔５４から所定の流量で洗浄液Ｒを吐出し、ガラス基板８２の裏面を濡らすと共に、駆動機構５３によってブラシ部５０を予め設定した回転数で回転させる。しかる後、駆動部８７によってガラス基板８２を下降させて、ブラシ部５０の上面にガラス基板８２の裏面を接触させる。さらにガラス基板８２を下降させて予め設定した押圧力でブラシ部５０をガラス基板８２に押し当てるように調整する。そして既述と同様にしてブラシ部５０とガラス基板８２との間に洗浄液Ｒが介在した状態でブラシ部５０が洗浄される。このような形態であっても上述と同様の効果が得られる。   The operation in this embodiment will be described. After the wafer W is cleaned by the cleaning member 5 as described above, the glass substrate 82 is moved by the moving mechanism 83 and the lower surface of the glass substrate 82 and the brush portion 50 of the cleaning member 5 are moved. Are opposed to each other (see FIG. 11). Subsequently, the glass substrate 82 is lowered by the drive unit 87 via the guide shaft 86 so that the distance between the brush unit 50 and the glass substrate 82 becomes a predetermined distance. Thereafter, the cleaning liquid R is discharged at a predetermined flow rate from the discharge hole 54 formed on the upper surface of the brush unit 50 to wet the back surface of the glass substrate 82, and the brush unit 50 is rotated at a preset rotation speed by the drive mechanism 53. . Thereafter, the glass substrate 82 is lowered by the driving unit 87, and the back surface of the glass substrate 82 is brought into contact with the upper surface of the brush unit 50. Further, the glass substrate 82 is lowered and adjusted so that the brush portion 50 is pressed against the glass substrate 82 with a preset pressing force. And the brush part 50 is wash | cleaned in the state which the cleaning liquid R intervened between the brush part 50 and the glass substrate 82 like the above-mentioned. Even if it is such a form, the effect similar to the above is acquired.

次に塗布、現像装置に上述した洗浄装置２を適用した一例について簡単に説明する。図１２は塗布、現像装置に露光装置を接続したシステムの平面図であり、図１３は同システムの斜視図である。また図１４は同システムの縦断面図である。塗布、現像装置にはキャリアブロックＳ１が設けられており、その載置台１０１上に載置された密閉型のキャリア１００から受け渡しアームＣがウエハＷを取り出して処理ブロックＳ２に受け渡し、処理ブロックＳ２から受け渡しアームＣが処理済みのウエハＷを受け取ってキャリア１００に戻すように構成されている。   Next, an example in which the above-described cleaning device 2 is applied to a coating and developing device will be briefly described. FIG. 12 is a plan view of a system in which an exposure apparatus is connected to the coating and developing apparatus, and FIG. 13 is a perspective view of the system. FIG. 14 is a longitudinal sectional view of the system. The coating / developing apparatus is provided with a carrier block S1, and the transfer arm C takes out the wafer W from the hermetically sealed carrier 100 mounted on the mounting table 101, transfers it to the processing block S2, and from the processing block S2. The transfer arm C is configured to receive the processed wafer W and return it to the carrier 100.

本実施の形態に係る洗浄装置２は、処理ブロックＳ２から露光装置Ｓ４へとウエハＷを受け渡す際、即ち図１２に示すようにインターフェイスブロックＳ３の入口部にて処理対象となるウエハＷの裏面洗浄を行うように構成されている。   The cleaning apparatus 2 according to the present embodiment transfers the wafer W from the processing block S2 to the exposure apparatus S4, that is, as shown in FIG. 12, the back surface of the wafer W to be processed at the entrance of the interface block S3. It is configured to perform cleaning.

前記処理ブロックＳ２は、図１３に示すようにこの例では現像処理を行うための第１のブロック（ＤＥＶ層）Ｂ１、レジスト膜の下層側に形成される反射防止膜の形成処理を行うための第２のブロック（ＢＣＴ層）Ｂ２、レジスト膜の塗布を行うための第３のブロック（ＣＯＴ層）Ｂ３、レジスト膜の上層側に形成される反射防止膜の形成を行うための第４のブロック（ＴＣＴ層）Ｂ４を、下から順に積層して構成されている。   As shown in FIG. 13, the processing block S2 is a first block (DEV layer) B1 for performing development processing in this example, and a processing for forming an antireflection film formed on the lower layer side of the resist film. The second block (BCT layer) B2, the third block (COT layer) B3 for applying the resist film, and the fourth block for forming the antireflection film formed on the upper layer side of the resist film (TCT layer) B4 is laminated in order from the bottom.

第２のブロック（ＢＣＴ層）Ｂ２と第４のブロック（ＴＣＴ層）Ｂ４とは、各々反射防止膜を形成するための薬液をスピンコーティングにより塗布する塗布ユニットと、この塗布ユニットにて行われる処理の前処理及び後処理を行うための加熱・冷却系の処理ユニット群と、前記塗布ユニットと処理ユニット群との間に設けられ、これらの間でウエハＷの受け渡しを行う搬送アームＡ２,Ａ４と、で構成されている。第３のブロック（ＣＯＴ層）Ｂ３についても前記薬液がレジスト液であることを除けば同様の構成である。   The second block (BCT layer) B2 and the fourth block (TCT layer) B4 are each a coating unit that applies a chemical solution for forming an antireflection film by spin coating, and a process performed in this coating unit. A heating / cooling system processing unit group for performing the pre-processing and post-processing, and transfer arms A2, A4 that are provided between the coating unit and the processing unit group and transfer the wafer W between them. , Is composed of. The third block (COT layer) B3 has the same configuration except that the chemical solution is a resist solution.

一方、第１のブロック（ＤＥＶ層）Ｂ１については図１４に示すように一つのＤＥＶ層Ｂ１内に現像ユニット１１０が２段に積層されている。そして当該ＤＥＶ層Ｂ１内には、これら２段の現像ユニット１１０にウエハＷを搬送するための搬送アームＡ１が設けられている。つまり２段の現像ユニットに対して搬送アームＡ１が共通化された構成となっている。   On the other hand, with respect to the first block (DEV layer) B1, as shown in FIG. 14, the developing units 110 are stacked in two stages in one DEV layer B1. In the DEV layer B1, a transfer arm A1 for transferring the wafer W to the two-stage development unit 110 is provided. That is, the transport arm A1 is shared with the two-stage developing unit.

さらに処理ブロックＳ２には、図１３及び図１４に示すように棚ユニットＵ５が設けられ、キャリアブロックＳ１からのウエハＷは前記棚ユニットＵ５の一つの受け渡しユニット、例えば第２のブロック（ＢＣＴ層）Ｂ２の対応する受け渡しユニットＤ１によって順次搬送される。次いでウエハＷは第２のブロック（ＢＣＴ層）Ｂ２内の搬送アームＡ２により、この受け渡しユニットＣＰＬ２から各ユニット（反射防止膜ユニット及び加熱・冷却系の処理ユニット群）に搬送され、これらユニットにて反射防止膜が形成される。   Further, as shown in FIGS. 13 and 14, the processing block S2 is provided with a shelf unit U5, and the wafer W from the carrier block S1 is one transfer unit of the shelf unit U5, for example, a second block (BCT layer). It is sequentially conveyed by the corresponding delivery unit D1 of B2. Next, the wafer W is transferred from the transfer unit CPL2 to each unit (an antireflection film unit and a heating / cooling processing unit group) by the transfer arm A2 in the second block (BCT layer) B2. An antireflection film is formed.

その後、ウエハＷは棚ユニットＵ５の受け渡しユニットＢＦ２、前記棚ユニットＵ５の近傍に設けられた昇降自在な第１の受け渡しアームＤ１、棚ユニットＵ５の受け渡しユニットＣＰＬ３及び搬送アームＡ３を介して第３のブロック（ＣＯＴ層）Ｂ３に搬入され、レジスト膜が形成される。更にウエハＷは、搬送アームＡ３→棚ユニットＵ５の受け渡しユニットＢＦ３に受け渡される。なおレジスト膜が形成されたウエハＷは、第４のブロック（ＴＣＴ層）Ｂ４にて更に反射防止膜が形成される場合もある。この場合には、ウエハＷは受け渡しユニットＣＰＬ４を介して搬送アームＡ４に受け渡され、反射防止膜の形成された後搬送アームＡ４により受け渡しユニットＴＲＳ４に受け渡される。   Thereafter, the wafer W is transferred to the third unit via the delivery unit BF2 of the shelf unit U5, the first delivery arm D1 that is provided in the vicinity of the shelf unit U5, and the delivery unit CPL3 of the shelf unit U5 and the transfer arm A3. The resist film is formed by loading into the block (COT layer) B3. Further, the wafer W is transferred from the transfer arm A3 to the transfer unit BF3 of the shelf unit U5. The wafer W on which the resist film is formed may further have an antireflection film formed in the fourth block (TCT layer) B4. In this case, the wafer W is transferred to the transfer arm A4 through the transfer unit CPL4, and after the antireflection film is formed, the wafer W is transferred to the transfer unit TRS4 by the transfer arm A4.

一方、ＤＥＶ層Ｂ１内の上部には、棚ユニットＵ５に設けられた受け渡しユニットＣＰＬ１１から棚ユニットＵ６に設けられた受け渡しユニットＣＰＬ１２にウエハＷを直接搬送するための専用の搬送手段であるシャトルアームＥが設けられている。レジスト膜や更に反射防止膜の形成されたウエハＷは、受け渡しアームＤ１を介して受け渡しユニットＢＦ３、ＴＲＳ４から受け取り受け渡しユニットＣＰＬ１１に受け渡され、ここからシャトルアームＥにより棚ユニットＵ６の受け渡しユニットＣＰＬ１２に直接搬送される。ここで図１２に示すように棚ユニットＵ６と洗浄装置２との間に設置された搬送手段である受け渡しアームＤ２は、回転、進退、昇降自在に構成され、洗浄前後のウエハＷを夫々専門に搬送する例えば２つのアームを備えている。ウエハＷは、受け渡しアームＤ２の洗浄前専用のアームによってＴＲＳ１２から取り出され、洗浄装置２内に搬送されて裏面洗浄を受ける。洗浄を終えたウエハＷは受け渡しアームＤ２に洗浄後専用のアームでＴＲＳ１３に載置された後、インターフェイスブロックＳ３に取り込まれることになる。なお図１４中のＣＰＬが付されている受け渡しユニットは温調用の冷却ユニットを兼ねており、ＢＦが付されている受け渡しユニットは複数膜のウエハＷを載置可能なバッファユニットを兼ねている。   On the other hand, in the upper part of the DEV layer B1, a shuttle arm E which is a dedicated transfer means for directly transferring the wafer W from the transfer unit CPL11 provided in the shelf unit U5 to the transfer unit CPL12 provided in the shelf unit U6. Is provided. The wafer W on which the resist film and further the antireflection film are formed is transferred from the transfer units BF3 and TRS4 to the transfer unit CPL11 via the transfer arm D1, and from there to the transfer unit CPL12 of the shelf unit U6 by the shuttle arm E. Directly conveyed. Here, as shown in FIG. 12, the transfer arm D2, which is a transfer means installed between the shelf unit U6 and the cleaning apparatus 2, is configured to be able to rotate, advance, retract, and lift, and specializes in wafers W before and after cleaning. For example, two arms for carrying are provided. The wafer W is taken out from the TRS 12 by a dedicated arm before cleaning of the transfer arm D2, and is transferred into the cleaning apparatus 2 and subjected to back surface cleaning. After the cleaning, the wafer W is placed on the transfer arm D2 and placed on the TRS 13 by a dedicated arm after cleaning, and then taken into the interface block S3. In FIG. 14, the delivery unit attached with CPL also serves as a cooling unit for temperature adjustment, and the delivery unit attached with BF also serves as a buffer unit on which a plurality of wafers W can be placed.

次いで、インターフェイスアームＢにより露光装置Ｓ４に搬送され、ここで所定の露光処理が行われた後、棚ユニットＵ６の受け渡しユニットＴＲＳ６に載置されて処理ブロックＳ２に戻される。次いでウエハＷは、第１のブロック（ＤＥＶ層）Ｂ１にて現像処理が行われ、搬送アームＡ１により棚ユニットＵ５における受け渡しアームＣ０に戻される、なお図１２においてＵ１〜Ｕ４は各々加熱部と冷却部とを積層した熱系ユニット群である。   Next, after being transported to the exposure apparatus S4 by the interface arm B and performing a predetermined exposure process here, it is placed on the delivery unit TRS6 of the shelf unit U6 and returned to the processing block S2. Next, the wafer W is developed in the first block (DEV layer) B1, and returned to the transfer arm C0 in the shelf unit U5 by the transfer arm A1. In FIG. 12, U1 to U4 are respectively a heating unit and a cooling unit. It is the thermal system unit group which laminated | stacked the part.

なお、図１２〜図１４に示した塗布、現像装置では実施の形態に係る洗浄装置２をインターフェイスブロックＳ３の入口部に設けた例を示したが、洗浄装置２を設置する位置はこの例に限定されるものではない。例えばインターフェイスブロックＳ３内に当該洗浄装置２を設置してもよいし、処理ブロックＳ２の入口部、例えば棚ユニットＵ５に設置してレジスト膜の形成される前のウエハＷを裏面洗浄するように構成してもよいし、キャリアブロックＳ１内に設けてもよい。   In addition, although the example which provided the washing | cleaning apparatus 2 which concerns on embodiment in the entrance part of interface block S3 was shown in the application | coating and developing apparatus shown in FIGS. 12-14, the position which installs the washing | cleaning apparatus 2 in this example It is not limited. For example, the cleaning apparatus 2 may be installed in the interface block S3, or the wafer W before the resist film is formed is configured to be installed on the entrance portion of the processing block S2, for example, the shelf unit U5, to clean the back surface. Alternatively, it may be provided in the carrier block S1.

更に、本実施の形態に係る洗浄装置２を適用可能な装置は、塗布、現像装置に限定されない。例えばイオン注入後のアニール工程を行う熱処理装置にも本洗浄装置２は適用することができる。ウエハＷの裏面にパーティクルが付着したままアニール工程を行うと、この工程中にパーティクルがウエハＷの裏面から入り込み、このパーティクルと表面のトランジスタとの間に電流路が形成されてしまうこともある。このため、この工程の前にウエハＷを裏面洗浄することにより製品の歩留まりを向上させることができる。   Furthermore, an apparatus to which the cleaning apparatus 2 according to the present embodiment can be applied is not limited to a coating / developing apparatus. For example, the cleaning apparatus 2 can be applied to a heat treatment apparatus that performs an annealing process after ion implantation. If the annealing process is performed with the particles attached to the back surface of the wafer W, the particles may enter from the back surface of the wafer W during this process, and a current path may be formed between the particles and the transistors on the surface. For this reason, the yield of products can be improved by cleaning the back surface of the wafer W before this step.

本発明に係る洗浄装置を示す斜視図である。It is a perspective view which shows the washing | cleaning apparatus which concerns on this invention. 前記洗浄装置の平面図である。It is a top view of the cleaning device. 前記洗浄装置の縦断面図である。It is a longitudinal cross-sectional view of the said washing | cleaning apparatus. 前記洗浄装置の縦断面図である。It is a longitudinal cross-sectional view of the said washing | cleaning apparatus. 洗浄ブラシの構成を示す斜視図である。It is a perspective view which shows the structure of a washing brush. 本発明の実施形態に係る制御部を示すブロック図である。It is a block diagram which shows the control part which concerns on embodiment of this invention. 前記洗浄装置の動作を説明するための工程図である。It is process drawing for demonstrating operation | movement of the said washing | cleaning apparatus. 洗浄部材が洗浄される様子を示す説明図である。It is explanatory drawing which shows a mode that a cleaning member is cleaned. 洗浄部材とガラス基板との潤滑状態を示すストライベック線図である。It is a Stribeck diagram which shows the lubrication state of a cleaning member and a glass substrate. 上記洗浄装置を適用して塗布、現像装置の実施の形態を示す平面図である。It is a top view which shows embodiment of an application | coating and developing apparatus applying the said washing | cleaning apparatus. 本発明の他の実施の形態に係る洗浄装置を示す斜視図である。It is a perspective view which shows the washing | cleaning apparatus which concerns on other embodiment of this invention. 本発明の他の実施の形態に係る洗浄装置を示す平面図であるIt is a top view which shows the washing | cleaning apparatus which concerns on other embodiment of this invention. 上記塗布、現像装置の斜視図である。It is a perspective view of the said coating and developing apparatus. 上記塗布、現像装置の縦断面図である。It is a longitudinal cross-sectional view of the said application | coating and developing apparatus. 従来の洗浄装置を示す概略縦断面図である。It is a schematic longitudinal cross-sectional view which shows the conventional washing | cleaning apparatus.

符号の説明Explanation of symbols

Ｗ 半導体ウエハ
２ 洗浄装置
２０ａ，２０ｂ 吸着パット
２１ａ，２１ｂ パット支持部
２２ａ，２２ｂ 橋桁部
２３ 井桁
２７ 昇降機構
３ スピンチャック
４１ アッパーカップ
５ 洗浄ブラシ
５０ 洗浄部材
５１ 基台
５２ 支持体
５３ 駆動機構
５４ 吐出孔
５５ 通流管
５６ 温度調整部
５７ 洗浄液供給源
５８ ベルト
６ ガラス基板
６０ 駆動機構
６２ 紫外線ランプ
９ 制御部 W Semiconductor wafer 2 Cleaning device 20a, 20b Adsorption pad 21a, 21b Pad support part 22a, 22b Bridge girder part 23 Cross girder 27 Lifting mechanism 3 Spin chuck 41 Upper cup 5 Cleaning brush 50 Cleaning member 51 Base 52 Support body 53 Drive mechanism 54 Discharge Hole 55 Flow pipe 56 Temperature adjustment unit 57 Cleaning liquid supply source 58 Belt 6 Glass substrate 60 Drive mechanism 62 Ultraviolet lamp 9 Control unit

Claims (13)

回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄装置において、
前記洗浄部材により基板を洗浄する位置から離れて設けられ、その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体と、
前記洗浄部材を、基板を洗浄する領域と前記ブラシ洗浄体により前記ブラシ部が洗浄される領域との間で移動させる移動手段と、
前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、ブラシ洗浄体と洗浄部材とを相対的に回転させるための手段と、
前記ブラシ洗浄体とブラシ部材とを相対的に回転させているときに前記ブラシ洗浄体の下面と前記ブラシ部との間に洗浄液を供給する洗浄液供給手段と、を備えたことを特徴とする基板洗浄装置。 In the substrate cleaning apparatus for cleaning the back surface of the substrate by contacting the brush portion of the cleaning member while supplying the cleaning liquid to the back surface of the substrate rotating around the vertical axis while being held horizontally by the rotation holding means,
A brush cleaning body provided as a cleaning surface that is provided apart from a position for cleaning the substrate by the cleaning member and whose lower surface is in contact with the brush portion to clean the brush portion;
Moving means for moving the cleaning member between a region for cleaning the substrate and a region for cleaning the brush portion by the brush cleaning body;
Means for pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body, and rotating the brush cleaning body and the cleaning member relatively;
And a cleaning liquid supply means for supplying a cleaning liquid between the lower surface of the brush cleaning body and the brush portion when the brush cleaning body and the brush member are relatively rotated. Cleaning device. 回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄装置において、
その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体と、
前記ブラシ洗浄体を、前記洗浄部材が基板を洗浄する領域と当該領域から離れた待機領域との間で移動させる移動手段と、
基板を洗浄する領域に位置する前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、ブラシ洗浄体と洗浄部材とを相対的に回転させるための手段と、
前記ブラシ洗浄体とブラシ部材とを相対的に回転させているときに前記ブラシ洗浄体の下面と前記ブラシ部との間に洗浄液を供給する洗浄液供給手段と、を備えたことを特徴とする基板洗浄装置。 In the substrate cleaning apparatus for cleaning the back surface of the substrate by contacting the brush portion of the cleaning member while supplying the cleaning liquid to the back surface of the substrate rotating around the vertical axis while being held horizontally by the rotation holding means,
A brush cleaning body formed as a cleaning surface whose lower surface is in contact with the brush portion to clean the brush portion;
Moving means for moving the brush cleaning body between a region where the cleaning member cleans the substrate and a standby region away from the region;
Means for pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body located in the region for cleaning the substrate, and relatively rotating the brush cleaning body and the cleaning member;
And a cleaning liquid supply means for supplying a cleaning liquid between the lower surface of the brush cleaning body and the brush portion when the brush cleaning body and the brush member are relatively rotated. Cleaning device. 前記ブラシ部と前記ブラシ洗浄体との潤滑状態を示すストライベック線図において弾性流体潤滑が得られる回転数で回転させることを特徴とする請求項１または２に記載の基板洗浄装置。   3. The substrate cleaning apparatus according to claim 1, wherein the substrate cleaning apparatus is rotated at a rotational speed at which elastic fluid lubrication is obtained in a Stribeck diagram showing a lubrication state between the brush portion and the brush cleaning body. 前記ブラシ部の回転数は２００ｒｐｍ以上であることを特徴とする請求項３に記載の基板洗浄装置。   The substrate cleaning apparatus according to claim 3, wherein the brush unit has a rotation speed of 200 rpm or more. 前記ブラシ洗浄体の下面に付着した有機物を除去するために紫外線を照射する紫外線ランプをさらに備えたことを特徴とする請求項１ないし４のいずれか一つに記載の基板洗浄装置。   5. The substrate cleaning apparatus according to claim 1, further comprising an ultraviolet lamp that irradiates ultraviolet rays to remove organic substances attached to the lower surface of the brush cleaning body. 前記ブラシ洗浄体はガラス基板であることを特徴とする請求項１ないし５のいずれか一つに記載の基板洗浄装置。   The substrate cleaning apparatus according to claim 1, wherein the brush cleaning body is a glass substrate. 回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄方法において、
前記洗浄部材により基板を洗浄する領域から離れて設けられ、その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体を用い、
前記洗浄部材を、基板を洗浄した後、移動手段により前記ブラシ洗浄体の下面に対向する位置まで移動させる工程と、
前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、両者を相対的に回転させながらブラシ洗浄体の下面とブラシ部との間に洗浄液を供給することによりブラシ部を洗浄する工程と、
その後、前記洗浄部材を基板の裏面を洗浄する領域に移動させて基板の裏面を洗浄する工程と、を含むことを特徴とする基板洗浄方法。 In the substrate cleaning method of cleaning the back surface of the substrate by contacting the brush portion of the cleaning member while supplying the cleaning liquid to the back surface of the substrate rotating around the vertical axis while being held horizontally by the rotation holding means,
Using a brush cleaning body provided away from the region for cleaning the substrate by the cleaning member, the lower surface of which is formed as a cleaning surface for cleaning the brush portion in contact with the brush portion,
Moving the cleaning member to a position facing the lower surface of the brush cleaning body by moving means after cleaning the substrate;
Cleaning the brush portion by pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body and supplying a cleaning liquid between the lower surface of the brush cleaning body and the brush portion while relatively rotating both;
And a step of cleaning the back surface of the substrate by moving the cleaning member to a region for cleaning the back surface of the substrate. 回転保持手段により水平に保持された状態で鉛直軸周りに回転する基板の裏面に洗浄液を供給しながら洗浄部材のブラシ部を接触させて当該基板の裏面を洗浄する基板洗浄方法において、
その下面が前記ブラシ部と接触して当該ブラシ部を洗浄する洗浄面として形成されたブラシ洗浄体を用い、
前記洗浄部材により基板を洗浄した後、移動手段により前記ブラシ洗浄体を移動させて当該ブラシ洗浄体の下面と洗浄部材のブラシ部とを対向させる工程と、
前記ブラシ洗浄体の下面に洗浄部材のブラシ部を押し当て、両者を相対的に回転させながらブラシ洗浄体の下面とブラシ部との間に洗浄液を供給することによりブラシ部を洗浄する工程と、
その後、前記ブラシ洗浄体を、洗浄部材による基板の裏面の洗浄領域から退避させ、洗浄部材により基板の裏面を洗浄する工程と、を含むことを特徴とする基板洗浄方法。 In the substrate cleaning method of cleaning the back surface of the substrate by contacting the brush portion of the cleaning member while supplying the cleaning liquid to the back surface of the substrate rotating around the vertical axis while being held horizontally by the rotation holding means,
Using a brush cleaning body formed as a cleaning surface for cleaning the brush portion with its lower surface in contact with the brush portion,
After cleaning the substrate by the cleaning member, the step of moving the brush cleaning body by moving means to make the lower surface of the brush cleaning body and the brush part of the cleaning member face each other;
Cleaning the brush portion by pressing the brush portion of the cleaning member against the lower surface of the brush cleaning body and supplying a cleaning liquid between the lower surface of the brush cleaning body and the brush portion while relatively rotating both;
Then, the step of retracting the brush cleaning body from the cleaning region of the back surface of the substrate by the cleaning member and cleaning the back surface of the substrate by the cleaning member is included. 前記ブラシ部と前記ブラシ洗浄体との潤滑状態を示すストライベック線図において弾性流体潤滑が得られる回転数で回転させることを特徴とする請求項７または８に記載の基板洗浄方法。   The substrate cleaning method according to claim 7 or 8, wherein the substrate is rotated at a rotational speed at which elastic fluid lubrication is obtained in a Stribeck diagram showing a lubrication state between the brush portion and the brush cleaning body. 前記ブラシ部の回転数は２００ｒｐｍ以上であることを特徴とする請求項９に記載の基板洗浄方法。   The substrate cleaning method according to claim 9, wherein the number of rotations of the brush portion is 200 rpm or more. 前記ブラシ洗浄体の下面に紫外線を照射して、当該下面に付着した有機物を除去する工程とを、さらに含むことを特徴とする請求項７ないし１０のいずれか一つに記載の基板洗浄方法。   The substrate cleaning method according to claim 7, further comprising a step of irradiating the lower surface of the brush cleaning body with ultraviolet rays to remove organic substances attached to the lower surface. 前記ブラシ洗浄体はガラス基板であることを特徴とする請求項７ないし１１のいずれか一つに記載の基板洗浄方法。   The substrate cleaning method according to claim 7, wherein the brush cleaning body is a glass substrate. 基板の裏面を洗浄する基板洗浄装置に用いられるコンピュータプログラムを格納した記憶媒体であって、
前記プログラムは請求項７ないし１２のいずれか一つに記載された基板洗浄方法を実行するためにステップが組まれていることを特徴とする記憶媒体。 A storage medium storing a computer program used in a substrate cleaning apparatus for cleaning the back surface of a substrate,
A storage medium characterized in that the program includes steps for executing the substrate cleaning method according to any one of claims 7 to 12.
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