JP2009178815A - Micromachine apparatus and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a micromachine apparatus capable of reducing the noise of an output signal by suppressing the vibration of the micromachine, and a method for manufacturing the same. <P>SOLUTION: The micromachine apparatus 1 includes: substrates 11, 12; a MEMS element 16 mounted on the substrates 11, 12, provided with a mechanism to deform with the application of an electric field, and having electric characteristics varying with the deformation; a first sealing element 21 mounted on the main face of the substrates 11, 12, for covering the MEMS element 16 through a hollow portion 17 accommodating gas, having a first open-shaped portion 21a to communicate the hollow portion 17 side with the outside, and being deformable due to differential pressure between the hollow portion 17 side and the outside; a second sealing element 22 for blocking the first open-shaped portion 21a on the first sealing element 21 and provided with a second open-shaped portion 22a to communicate the hollow portion 17 side with the outside in a position offset from the first open-shaped portion 21a; and a third sealing element 23 film-formed on the second sealing element 22 and for sealing the first open-shaped portion 21a and the second open-shaped portion 22a. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a micromachine device such as packaging of micro-electromechanical components and a method of manufacturing the micromachine device.

  As an example of the micromachine device, as shown in FIG. 12, a micro-electro-mechanical component (MEMS: Micro-Electro-Mechanical) in which a MEMS element 104 as a micromachine with operation is mounted on a substrate 102 and sealed in a hollow space. -Systems) 101 is known (see, for example, Patent Document 1 or 2). The microelectromechanical component 101 includes a substrate 102, an insulating layer 103, a MEMS element 104, a signal wiring 105, a hollow portion 106, a first sealing body 107, and a second sealing body 108. The MEMS element 104 has a cantilever beam structure or a double beam structure, and the central portion of the beam is formed with a gap of about several μm from the signal wiring 105. In the insulating layer 103 immediately below the MEMS element 104, a signal wiring 105 is formed of Au or the like. The MEMS element 104 is made of poly-Si (polysilicon) or Al (aluminum) having high spring characteristics, and is brought closer to the signal wiring 105 by applying a driving force such as electrostatic force. When the driving force is unloaded, the MEMS element 104 returns to a position having a gap with the signal wiring 105 due to its own spring characteristics. By changing the gap between the MEMS element 104 and the signal wiring 105 in this manner, functions such as variable capacitance and switching are achieved.

  In order to operate and protect the MEMS element 104, it is necessary to seal it in a hollow state. A method of manufacturing a micromachine device by a film forming process is provided for the purpose of reducing manufacturing cost and downsizing. First, as shown in FIG. 13, a sacrificial layer 109 that is completely removed in a later step is formed on the substrate 102 in order to provide a gap between the micromachine 104 and the substrate 103. Next, the MEMS element 104 is formed on the sacrificial layer 109. A second sacrificial layer 110 is formed on the MEMS element 104 formed on the sacrificial layer 109. The first sealing body 21 is formed on the second sacrificial layer 110. An opening shape portion 107a for introducing an etching material into the first sacrificial layer 109 is formed when the sacrificial layers 109 and 110 around the MEMS element 104 are removed during or after the formation of the first sealing body 21. . As shown in FIG. 14, a sacrificial layer removing etching material is introduced from the opening shape portion 107a, and all the sacrificial layers 109 and 110 are completely removed. Finally, the second sealing body 108 is formed on the first sealing body 21 until the opening shape portion 107a is completely closed.

  As described above, the MEMS element 104 can be sealed in a hollow state by the first and second sealing bodies 107 and 108 as shown in FIG. The hollow portion 106 has a reduced pressure atmosphere.

Here, when the second sealing body 108 is formed by a film forming method such as CVD or sputtering, the film material is deposited immediately below the opening shape portion 107 a, so that the film material is not deposited on the MEMS element 104. An opening shape portion 107 a is provided at a position away from the MEMS element 104.
JP 2005-207959 A U.S. Patent No. 70008812B1

  However, the above technique has the following problems. That is, when the second sealing body 108 is formed by CVD, sputtering, or the like and the opening shape portion 107a of the first sealing body 107 is closed, the hollow portion 106 becomes a decompressed atmosphere in the thin film device chamber. The mouth is closed while the decompressed state is maintained. Since the fluid resistance is small in the decompressed atmosphere, the vibration of the MEMS element 104 when the electrostatic force to the MEMS element 104 having a spring structure is unloaded becomes difficult to stabilize, and the vibration of the MEMS element 104 becomes an output signal. Causes noise. In order to suppress the vibration of the element, it is necessary to increase the fluid resistance by setting the hollow portion to atmospheric pressure or a pressurized atmosphere, but this is difficult to achieve with the above configuration.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a micromachine device that can reduce noise of an output signal by facilitating the vibration of the micromachine.

  A micromachine device according to one embodiment of the present invention includes a substrate, a micromachine that is provided on the substrate and is deformed by the action of an electric field, and that changes electrical characteristics in accordance with the deformation, and a main surface of the substrate. The micromachine is provided through a hollow portion that contains gas and has a first opening shape portion that communicates the hollow portion side and the external side, and is caused by a pressure difference between the hollow portion side and the external side. The deformable first sealing body and the first opening shape portion on the first sealing body are closed, and the hollow portion side and the external side are communicated with each other at a position offset from the first opening shape portion. A second sealing body including a second opening shape portion; and a third sealing body formed on the second sealing body and sealing the first opening shape portion and the second opening shape portion. It is characterized by that.

  According to one aspect of the present invention, there is provided a method of manufacturing a micromachine device including a step of disposing a micromachine having a mechanism that is deformed by the action of an electric field and changing an electric characteristic in accordance with the deformation on a substrate; Forming a sacrificial layer, and covering the micromachine on the first sacrificial layer and the main surface of the substrate via the first sacrificial layer and communicating with the first sacrificial layer. Forming a deformable first sealing body having an opening shape portion; forming a second sacrificial layer on the first sealing body; and on the second sacrificial layer, Forming a second sealing body having a second opening shape portion communicating with the second sacrificial layer at a position offset from the first opening shape portion; and sacrificing from the first and second opening shape portions The first fluid is introduced by introducing a fluid for removing the layer. And a step of removing the second sacrificial layer, a step of setting the gas pressure in the hollow portion formed by removing the first and second sacrificial layers to a predetermined first pressure, and the surrounding atmosphere. A step of creating a pressure difference between the inner side and the outer side of the hollow portion by setting the second pressure lower than the first pressure, and forming a third sealing body on the sealing body And a process.

  The present invention can provide a micromachine device in which noise of an output signal is reduced.

  A micromachine device 1 according to a first embodiment of the present invention will be described below with reference to FIGS. 1 and 2. In each figure, the configuration is schematically shown by appropriately enlarging, reducing, or omitting it. In the figure, X, Y, and Z indicate three directions orthogonal to each other.

  The micromachine device 1 is, for example, a microelectromechanical component (MEMS), and includes a base substrate 11 and an insulating layer 12 constituting a substrate, a MEMS element 16 (micromachine), a signal wiring 15 and the like, and a sealing body 20 It is hermetically sealed in a state where a hollow portion 17 is formed in which an atmosphere in which atmospheric pressure gas is sealed is formed in combination with the substrate. The sealing body 20 is configured by sequentially laminating a second sealing body 22 and a third sealing body 23 in addition to the first sealing body 21 that defines the hollow portion 17.

The base substrate 11 is a silicon (Si) substrate, a glass substrate, or a sapphire substrate, and is formed in a predetermined plate shape.
The insulating layer 12 is formed on the base substrate 11 and is made of, for example, a silicon oxide film (SiO ₂ ). The base substrate 11 and the insulating layer 12 constitute a substrate.

  On the upper surface of the insulating layer 12, a lower electrode 13, a drive electrode 14, a signal wiring 15 and a MEMS element 16 are formed. The signal wiring 15 is formed of Au (gold) or the like and extends in the Y direction in FIG. A MEMS element 16 is formed on the upper surface of the insulating layer 12. The drive electrode 14 is provided on both sides in the X direction in the drawing on the insulating layer 12 with the signal wiring 15 interposed therebetween. The MEMS element 16 is connected to the lower electrode 13 that communicates with the outside of the sealing body 20. The signal wiring 15 is formed on the surface of the insulating layer 12 immediately below the MEMS element 16.

  The MEMS element 16 is a movable mechanism part of a micromachine, and has a doubly-supported beam shape having a step, its both end portions are connected to the lower electrode 13, and the beam-shaped central portion is about several μm from the signal wiring 15. They are spaced apart with a gap. For example, as will be described later, the gap structure can be secured through a manufacturing process in which the MEMS element 16 is formed on the sacrificial layer 18a having a thickness of about several μm.

  The MEMS element 16 is made of, for example, Poly-Si or Al and has a spring characteristic. For example, when a driving force such as an electrostatic force is applied from the driving electrode 14 as an action of an electric field, the MEMS element 16 elastically deforms and approaches the signal wiring 15, and when the driving force is removed, It returns to its original position again due to the spring characteristics. That is, the MEMS element 16 is deformed so that the space between the MEMS element 16 and the signal wiring 15 is changed according to the driving force when a driving force such as an electrostatic force is applied and unloaded. Change the electrical characteristics of the device 1. Depending on how it is changed, it performs functions such as variable capacitance and switching.

  The first sealing body 21 is bonded to the upper surface of the surrounding insulating layer 12 at a position where the edge portion is separated from the MEMS element 16, and the central portion is located above the MEMS element 16 via the hollow portion 17. Cover from. That is, the first sealing body 21 is separated from the MEMS element 16.

  The first sealing body 21 is a thin and easily deformable thin film having a thickness of about several thousand mm, and is installed at a distance of about several to several tens μm from the MEMS element 16. For example, as will be described later, the hollow portion 17 can be formed by forming the first sealing body 21 after forming the sacrificial layer having a thickness of about several tens of μm and removing the sacrificial layer 18b. .

In the manufacturing process, the first sealing body 21 is provided with a plurality of first opening shape portions 21a that are openings provided for introducing a dry etching gas (O ₂ plasma gas or the like) for removing a sacrificial layer. Yes. The first opening shape portion 21a has, for example, an elongated slit shape extending in the Y direction in the figure, and is formed in parallel in the X direction in the figure at intervals of, for example, 50 μm over the entire periphery including the upper part of the MEMS element 16. .

  Between the opening-shaped parts 21a in the first sealing body 21, an elongated beam shape extending in the Y direction in the figure and a thin film shape are formed, and a deformable part 21b deformable in the thickness direction is formed. That is, the 1st sealing body 21 is divided | segmented into the deformation | transformation part 21b which is a some elongate rectangular film | membrane by the some opening shape part 21a. Each of the deformable portions 21b is configured to be bent and deformed upward against the gravity due to a pressure difference described later.

  The outer side of the first sealing body 21 including the first opening shape portion 21 a and the deformation portion 21 b is covered with the second sealing body 22. In addition, as shown in FIG. 1, the 1st sealing body 21 and the 2nd sealing body 22 closely_contact | adhere in the Central Europe part of the MEMS element 16, and the 1st sealing body 21 and 2nd sealing are in a side periphery part. A slight gap 19 is formed between the stationary body 22 and the stationary body 22.

  The second sealing body 22 is a thin film having a high rigidity and is formed to have a film thickness that does not require time for etching such as installation of an opening, and is formed to cover the first sealing body 21 from the outside. ing. The second sealing body 22 is, for example, about 1 to 2 μm thicker than the first sealing body 21, and is configured to be more difficult to deform than the first sealing body. For example, a gap can be formed by forming a sacrificial layer having a thickness of about several μm on the state where the first sealing body 21 is formed, and further forming a second sealing body 22 thereon. is there.

  The second sealing body 22 is also provided with a second opening shape portion 22a for introducing a dry etching gas for removing the sacrificial layer. The second opening shape portion 22a has, for example, an elongated slit shape extending in the Y direction in the drawing, and a plurality of second opening shape portions 22a are formed in parallel in the X direction in the drawing. The plurality of first opening shape portions 22a are formed in parallel in the X direction in the drawing at an interval of 50 μm, for example, over the entire periphery including the upper side of the MEMS element 16. The second opening shape portion 22a is offset so as not to overlap the first opening shape portion 21a.

  Therefore, when the first sealing body 21 is deformed to the second sealing body 22 side as will be described later due to a pressure difference between the inside and outside of the hollow portion 17 to be described later, the second opening shape portion 22a of the first sealing body 21 The first opening shape portion 21a is closed by a portion other than the second opening shape portion 22a of the second sealing body 22 while being closed by the deformation portion 21b.

  A third sealing body 23 is formed on the second sealing body 22. The third sealing body 23 is made of an inorganic material such as SiN (silicon nitride), and is formed so as to cover the outside of the second sealing body 22 and to seal the hollow portion 17.

Next, a method for manufacturing the micromachine device 1 according to the present embodiment will be described with reference to FIGS.
First, as shown in FIG. 3, the insulating layer 12 is formed on the base substrate 11, and the lower electrode 13, the drive electrode 14, and the signal wiring 15 are formed on the insulating layer 12. Next, as the MEMS element 16, for example, an electrostatic drive type high frequency switch having a cantilever structure using Au as a constituent material is formed.

  At this time, as shown in FIG. 3, first, a sacrificial layer having a predetermined shape that is completely removed in a later step on the signal wiring 15 in order to provide a gap between the signal wiring 15 and the MEMS element 16. After forming the step by forming 18a, the MEMS element 16 is formed on the sacrificial layer 18a. As described above, the MEMS element 16 is formed in a predetermined both-end supported beam shape having a step and a beam portion that is separated from the signal wiring 15.

  Further, as shown in FIG. 4, a sacrificial layer 18 b is formed on the state where the MEMS element 16 is formed so as to cover the MEMS element 16.

  The sacrificial layers 18a and 18b are formed by, for example, forming a polyimide film by a spin coat method, forming a predetermined shape by patterning, and curing.

As shown in FIG. 4, after the sacrificial layers 18a and 18b are formed, SiO ₂ is formed as a first sealing body 21 with a predetermined thickness, for example, about several thousand Å using a plasma CVD apparatus.

  Furthermore, for sacrificial layer removal for introducing a removal material to the first sealing body 21 when removing the sacrificial layers 18a and 18b around the MEMS element 16 during or after film formation by photolithography processing or the like. A plurality of opening-shaped portions 21a that are closed after the sacrificial layer is removed are formed.

  In particular, when the first opening shape portion 21a is two-dimensionally arranged in a plane including the portion directly above the MEMS element 16, etching can be performed in a short time when removing the sacrificial layers 18a, 18b, and 18c. .

Next, as shown in FIG. 5, a relatively thin sacrificial layer 18 c is formed so as to cover the first sealing body 21. Further, as shown in FIG. 6, SiO ₂ with a predetermined thickness is formed as a second sealing body 22 on the sacrificial layer 18 c by a plasma CVD apparatus. The thickness of the second sealing body 22 is, for example, about 1 to 2 μm. For sacrificial layer removal for introducing a removal material to the second sealing body 22 when the sacrificial layers 18a, 18b, and 18c around the MEMS element 16 are removed during or after film formation by photolithography processing or the like. A plurality of second opening shape portions 22a that are closed after the sacrificial layer is removed are formed.

  At this time, the first opening shape portion 21a and the second opening shape portion 22a are arranged so as to be offset without overlapping. This prevents deposition in the hollow portion 17 when the third sealing body is formed.

Next, an etching material for removing the sacrificial layer is introduced from the opening shape portion 21a, and as shown in FIG. 7, all the sacrificial layers 18a, 18b, and 18c are completely removed. For example, by introducing XeF ₂ gas for selectively removing polycrystalline silicon from the second opening shape portion 22a into the interior through the gap 19 and the first opening shape portion 21a, all the sacrificial layers 18a, 18b and 18c are removed. As a result, the hollow portion 17 is formed in the interior covered with the first sealing body 21 and the second sealing body 22.

  After removing the sacrificial layers 18a, 18b, and 18c, the micromachine device 1 is left in an atmospheric state. Thereby, the hollow part 17 connected to the outside by the opening shape part 21a becomes an internal pressure close to the atmospheric pressure of about 0.1 MPa. This pressure is defined as a first pressure. Therefore, compared with the case of a vacuum atmosphere, the fluid resistance in the hollow part 17 is large. In addition, for example, by exposing to a nitrogen atmosphere after removing the sacrificial layer, the hollow portion 17 communicated to the outside through the opening shape portions 21a and 22a can be made a nitrogen atmosphere. FIG. 8 shows an enlarged view of the vicinity of the first and second opening shapes 21a and 22a at this time.

  Next, in order to form the third sealing body 23, the thin film device having a high degree of vacuum with the base substrate 11 in a state where the MEMS element 16 is covered with the first and second sealing bodies through the hollow portion 17. Put in the chamber. The pressure in the thin film apparatus chamber is set as the second pressure. At this time, as shown in FIG. 9, there is a difference between the first pressure that is the internal pressure of the hollow portion 17 and the second pressure that is the atmosphere in the chamber, so the air inside the high-pressure hollow portion 17 is indicated by an arrow in the figure. As shown, the beam structure of the first sealing body 21 that flows out toward the outside and is easily deformed is deformed so as to be close to the direction of the second sealing body 22, and finally the second opening is formed. The shape portion 22a is closed.

  The interface 24a between the deformed first sealing body 21 and the inner side surface in the vicinity of the opening-shaped portion 22a of the second sealing body 22 is in a mechanical contact state as shown in FIG. ing.

  Next, for example, a low moisture-permeable SiN film is formed to a thickness of, for example, several μm or more so as to cover the first sealing body 21 and the second sealing body 22 by using a plasma CVD apparatus or a sputtering apparatus. Three sealing bodies 23 are formed.

  By forming the third sealing body 23 by a thin film process, the first sealing body 21 and the second sealing in the vicinity of the deformed first sealing body 21 and the opening shape portion 22a of the second sealing body 22 are formed. The interface 24a between the body 22 and the body 22 is sealed, and the space between the third sealing body 23 and the first sealing body 21 and the space between the third sealing body 23 and the second sealing body 22 are sealed. Thereby, the airtightness of the hollow part 17 is maintained, and leakage of internal air is prevented.

  In addition, since the openings 21a and 22a are closed within a predetermined short time after being put into the thin film apparatus chamber having a high degree of vacuum, a pressure close to atmospheric pressure is maintained inside the hollow portion 17. . Therefore, when the MEMS element 16 is operated, fluid resistance is generated, and the structure is easily attenuated.

  Thus, the micromachine device 1 shown in FIG. 1 is completed. The package as the micromachine device 1 thus configured can be used for a driver IC chip, for example.

  The micromachine device 1 and the manufacturing method of the micromachine device 1 according to the present embodiment have the following effects. That is, by making the atmosphere of the hollow portion 17 an atmosphere having a pressure higher than that in the thin film device chamber, the fluid resistance is increased, so that the vibration caused by the elastic restoring force of the MEMS element 16 is removed when the driving power is unloaded. Can be suppressed.

  For example, the vibration at the center of the beam-like portion shown in FIG. 2 can have an attenuation factor of three times or more as compared with a hollow sealing structure in a vacuum atmosphere. Therefore, the noise of the output signal can be suppressed and the accuracy as a part can be improved.

  Moreover, in this embodiment, the 2nd opening shape part offset from the 1st opening shape part 21a using the 1st sealing body 21 which has the opening shape part 21a and the thin deformation | transformation part 21b which can deform | transform with a pressure difference. By covering with the second sealing body 22 having 22a, a pressure difference between the hollow portion side and the external side is provided after the sacrificial layer 18 is removed, and the inside can be sealed by being deformed inside. It can be easily sealed while maintaining a high pressure state.

  Furthermore, by offsetting the opening shape portions 21a and 22a, it is possible to prevent the third sealing body 23 from being deposited downward in the thin film forming process. Therefore, the arrangement of the opening shape portions 21 a and 22 a is not limited, and the opening shape portions 21 a and 22 a can be provided over the entire upper surface of the first sealing body 21, such as immediately above the MEMS element 16. Therefore, the time until complete removal of the sacrificial layers 18a, 18b, and 18c can be shortened.

  That is, in the micromachine device in which the film material is deposited below the opening shape portion, it is necessary to provide the opening shape portion at a position away from the MEMS element 16, and thus it takes time to completely remove the sacrificial layer. In the embodiment, the opening shape portions 21a and 22a can be provided above the MEMS element 16, and therefore the time for removing the sacrificial layer inside can be shortened.

Furthermore, since the sealing body 20 is made of an insulating material such as SiO ₂ or SiN, no electric capacitance is formed between the sealing body 20 and the MEMS element 16 having conductivity. Therefore, it is possible to achieve performance having a high capacity change in an electromechanical component that uses a variable electric capacity by avoiding the formation of a capacity between the MEMS element 16 and surrounding conductors.

  In addition, this invention is not limited to the said embodiment, The material, shape, arrangement | positioning, size, structure, operation | movement, etc. of each component can be changed suitably and can be implemented. For example, the MEMS element 16 may have a shoulder beam shape, and examples of the patterning method and the sacrificial layer removal method include dry etching with an etching gas and wet etching with a chemical solution. The plurality of sacrificial layers 18a, 18b, and 18c may not be the same material. Further, the structure in which the insulating layer 12 is provided on the base substrate 11 as the substrate has been described. However, the insulating layer 12 is omitted, and the substrate is configured only by the base substrate 11, and the MEMS element 16 and the signal signal are formed on the base substrate 11. The wiring 15 may be formed. Further, although the MEMS element 16 is exemplified as having one beam-like member, a plurality of plate-like members may be connected via a connection joint to be configured in a beam shape.

  In addition, the present invention can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.

1 is a cross-sectional view showing a micromachine device according to an embodiment of the present invention. The top view of the micromachine apparatus. Sectional drawing which shows the manufacturing process of the micromachine apparatus. Sectional drawing which shows the manufacturing process of the micromachine apparatus. Sectional drawing which shows the manufacturing process of the micromachine apparatus. Sectional drawing which shows the manufacturing process of the micromachine apparatus. Sectional drawing which shows the manufacturing process of the micromachine apparatus. Sectional drawing which expands and shows a part of micromachine apparatus in the same manufacturing process. Sectional drawing which expands and shows a part of micromachine apparatus in the same manufacturing process. Sectional drawing which expands and shows a part of micromachine apparatus in the same manufacturing process. Sectional drawing which expands and shows a part of micromachine apparatus in the same manufacturing process. Sectional drawing which shows an example of a micromachine apparatus. Sectional drawing which shows the manufacturing process of an example of a micromachine apparatus. Sectional drawing which shows the manufacturing process of an example of a micromachine apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Micromachine apparatus, 11 ... Base substrate, 12 ... Insulating layer,
15 ... Signal wiring, 16 ... MEMS element (micromachine), 17 ... Hollow part,
18a, 18b, 18c ... sacrificial layer, 19 ... gap, 20 ... sealing body, 21 ... first sealing body,
21a ... 1st opening shape part, 21b ... Deformation part, 22 ... 2nd sealing body, 22a ... 2nd opening shape part, 23 ... 3rd sealing body.

Claims (8)

A substrate,
A micromachine that is provided on the substrate and includes a mechanism that is deformed by the action of an electric field, and that changes electrical characteristics in accordance with the deformation;
The first machine has a first opening shape portion that is provided on the main surface of the substrate and covers the micromachine through a hollow portion containing gas, and communicates the hollow portion side with the external side. A first sealing body that is deformable by a pressure difference on the outside side;
A second seal provided with a second opening shape portion that closes the first opening shape portion on the first sealing body and communicates the hollow portion side with the external side at a position offset from the first opening shape portion. A stationary body,
A third sealing body that is formed on the second sealing body and seals the first opening shape portion and the second opening shape portion;
A micromachine device comprising:   The first sealing body has a thin film shape and can be elongated and deformed in the thickness direction by forming a plurality of the first opening shape portions having an elongated slit shape in parallel to the direction intersecting the longitudinal direction. 2. The micromachine device according to claim 1, wherein a plurality of thin film-like deformed portions are arranged in parallel.   3. The micromachine device according to claim 1, wherein the gas is an inert gas.   The micromachine apparatus according to claim 1, wherein the gas is air.   5. The micromachine device according to claim 1, wherein the first sealing body, the second sealing body, and the third sealing body are made of an inorganic material containing SiO or SiN.   The micromachine device according to claim 1, wherein the first opening shape portion and the second opening shape portion are provided above the micromachine. A step of providing a micromachine that includes a mechanism that is deformed by the action of an electric field and that changes electrical characteristics in accordance with the deformation;
Forming a first sacrificial layer on the micromachine;
The first sacrificial layer and the main surface of the substrate have a first opening shape portion that covers the micromachine via the first sacrificial layer and communicates with the first sacrificial layer, and is deformable. Forming a first sealing body;
Forming a second sacrificial layer on the first sealing body;
Forming a second encapsulant having a second opening shape portion communicating with the second sacrificial layer at a position offset from the first opening shape portion on the second sacrificial layer;
Introducing a sacrificial layer removal fluid from the first and second opening shapes to remove the first and second sacrificial layers;
A step of setting the gas pressure in the hollow portion formed by removing the first and second sacrificial layers to a predetermined first pressure;
Producing a pressure difference between the inner side and the outer side of the hollow part by setting the ambient atmosphere to a second pressure lower than the first pressure;
Forming a third sealing body on the sealing body;
A method of manufacturing a micromachine device, comprising:   Due to the pressure difference generated in the step of generating the pressure difference, the first sealing body is deformed, and the second opening shape portion of the second sealing body is closed by the first sealing body, and 8. The method of manufacturing a micromachine device according to claim 7, wherein the first opening shape portion is closed by the second sealing body.

Images