JP2009135276A - Substrate carrier - Google Patents
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- JP2009135276A JP2009135276A JP2007310237A JP2007310237A JP2009135276A JP 2009135276 A JP2009135276 A JP 2009135276A JP 2007310237 A JP2007310237 A JP 2007310237A JP 2007310237 A JP2007310237 A JP 2007310237A JP 2009135276 A JP2009135276 A JP 2009135276A
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Abstract
Description
本発明は、半導体装置の製造に用いるウエハカセットから装置処理部へウエハを搬送するための基板搬送装置に関するものである。 The present invention relates to a substrate transfer apparatus for transferring a wafer from a wafer cassette used for manufacturing a semiconductor device to an apparatus processing unit.
従来の基板搬送装置は、特許文献１に開示されているような透過型センサーを設置し、ウエハカセット内のウエハの反り量を検知し、ウエハ搬送時にウエハ搬送用ロボットハンドのアーム挿入位置を補正する制御手段を有している。 A conventional substrate transfer apparatus is provided with a transmissive sensor as disclosed in Patent Document 1, detects the amount of wafer warpage in the wafer cassette, and corrects the arm insertion position of the wafer transfer robot hand during wafer transfer. Control means for
また、反射型センサーを設置し、ウエハカセット内のウエハ位置を検知し、ウエハ搬送時にウエハ搬送用ロボットハンドのアーム挿入位置を補正する制御手段を有している特許文献２に開示されているようなものもある。 Further, as disclosed in Patent Document 2, a reflective sensor is installed to detect the position of the wafer in the wafer cassette and to correct the arm insertion position of the wafer transfer robot hand during wafer transfer. There is also a thing.
また、特許文献３のように、ウエハ搬送用ロボットハンドに反射式フォトセンサーを設置し、ウエハカセット内のウエハのうち所定の位置からの位置ずれ（ウエハカセット内からのウエハの飛び出し）を検知し、位置ずれを検知した場合に前記ロボットハンドを停止させる制御手段及び警報を出す報知手段を有しているものもある。 Further, as disclosed in Patent Document 3, a reflective photosensor is installed in the wafer transfer robot hand to detect a positional deviation from a predetermined position (wafer jumping out of the wafer cassette) among the wafers in the wafer cassette. Some have a control means for stopping the robot hand and a notification means for issuing an alarm when a positional deviation is detected.
以下、図面を参照しながら、従来の基板搬送装置の一例について説明する。
図６は、従来の基板搬送装置の構成を示す図である。図６において、２１はウエハである。２２はウエハカセットで、５〜１０ｍｍピッチでウエハを収納するスロットが形成されており、直径２００ｍｍウエハ２１を２５枚水平に収納できる。２３はカセットステージで、ウエハカセット２２を保持し、図示を省略した駆動系により上下方向に駆動できる。２４はセンサー発光部、２５はセンサー受光部で、光路がウエハカセット２２内を通過するように装置に固定されて透過型センサーを構成している。２６は搬送アームでウエハカセット２内から図示を省略した基板処理部へウエハ２１を搬送する。２７はＣＩＭでウエハカセット内のウエハ枚数及びスロット位置を含む処理情報を統括する。２８は基板搬送制御部で、透過型センサーによるウエハカセット２２内のウエハ枚数とスロット位置の計測結果とＣＩＭ２７内のデータとを照合し、基板処理部への搬送可否を判断する。
Hereinafter, an example of a conventional substrate transfer apparatus will be described with reference to the drawings.
FIG. 6 is a diagram showing a configuration of a conventional substrate transfer apparatus. In FIG. 6, reference numeral 21 denotes a wafer. A wafer cassette 22 is formed with slots for storing wafers at a pitch of 5 to 10 mm, and can horizontally store 25 wafers 200 mm in diameter. A cassette stage 23 holds the wafer cassette 22 and can be driven vertically by a drive system (not shown). Reference numeral 24 denotes a sensor light emitting unit, and 25 denotes a sensor light receiving unit. The optical path is fixed to the apparatus so that the light path passes through the wafer cassette 22 to constitute a transmission type sensor. A transport arm 26 transports the wafer 21 from the wafer cassette 2 to a substrate processing unit (not shown). Reference numeral 27 denotes a CIM that supervises processing information including the number of wafers in the wafer cassette and the slot position. Reference numeral 28 denotes a substrate transfer control unit, which compares the number of wafers in the wafer cassette 22 by the transmission type sensor, the measurement result of the slot position, and the data in the CIM 27 to determine whether transfer to the substrate processing unit is possible.
以上のように構成された基板搬送装置について、以下、その動作を説明する。 The operation of the substrate transport apparatus configured as described above will be described below.
まず、ウエハ２１はウエハカセット２２のスロットに挿入されカセットステージ２３上に搬送される。カセットステージ２３はウエハカセット搬送位置より垂直方向の上方へ駆動し、センサー発光部２４及びセンサー受光部２５によりウエハカセット２２内のウエハ枚数とスロット位置を計測する。このとき、センサー発光部２４から投光した光はセンサー受光部２５で受光し電気信号へ変換され、センサー強度信号を電圧で出力する。基板搬送制御部２８は、センサー受光部２５より出力された電圧と、カセットステージ駆動量からウエハカセット２２内のウエハ枚数とスロット位置を計測し、その結果をＣＩＭ２７内のデータと照合する。ＣＩＭ２７は前記データ照合の結果、基板処理部への搬送可否を判断する。 First, the wafer 21 is inserted into the slot of the wafer cassette 22 and transferred onto the cassette stage 23. The cassette stage 23 is driven upward in the vertical direction from the wafer cassette transfer position, and the number of wafers and the slot position in the wafer cassette 22 are measured by the sensor light emitting unit 24 and the sensor light receiving unit 25. At this time, the light projected from the sensor light emitting unit 24 is received by the sensor light receiving unit 25 and converted into an electrical signal, and a sensor intensity signal is output as a voltage. The substrate transfer control unit 28 measures the number of wafers and the slot position in the wafer cassette 22 from the voltage output from the sensor light receiving unit 25 and the cassette stage driving amount, and collates the result with the data in the CIM 27. The CIM 27 determines whether or not conveyance to the substrate processing unit is possible as a result of the data collation.
次に、搬送可否の判断について説明する。前記ウエハ枚数とスロット位置をＣＩＭ２７に登録されているデータと照合する。照合の結果、ＣＩＭデータと一致した場合は、ウエハカセット２２内のウエハ２１を搬送アーム２６により基板処理部へ搬送する。また、基板処理部への搬送時には搬送アーム２６のウエハ取り出し位置を前記カセットステージ駆動量よりウエハカセット２２の個体差によるスロット位置やウエハ反りによる微少変動を検知し、搬送アーム２６とウエハステージ２３の上下動位置の補正を行う。また、照合の結果、ＣＩＭデータと不一致の場合は、ＣＩＭ２７への通信、装置操作パネルへの異常表示などの異常発報し、以後のウエハ２２の搬送動作を停止する。
しかしながら、上記の構成では、センサー劣化やウエハカセットステージ駆動系の性能劣化及び動作不良を検知できないので、搬送異常や設備停止が発生するまで異常を検知できないため、搬送異常によるウエハ破損や設備停止による生産性低下を発生するという問題点を有していた。 However, in the above configuration, sensor deterioration, performance deterioration of the wafer cassette stage drive system and malfunction cannot be detected. Therefore, abnormality cannot be detected until a conveyance abnormality or equipment stop occurs. There was a problem that productivity was reduced.
本発明は、上記問題点に鑑み、センサー劣化やウエハカセットステージ駆動系の性能劣化及び動作不良を検知し、搬送異常が発生する前に復旧作業を可能とする基板搬送装置を提供するものである。 In view of the above-described problems, the present invention provides a substrate transfer apparatus that detects sensor deterioration, performance deterioration and operation failure of a wafer cassette stage drive system, and enables restoration work before a transfer abnormality occurs. .
上記問題点を解決するために本発明の基板搬送装置は、センサー発光部とセンサー受光部を駆動させる手段を有し、センサー光路を可動するという構成を備えたものである。また、センサー出力信号を受信及び記録及び演算を可能とする手段を有し、前記センサー出力の変移量からセンサー劣化及びウエハカセットステージ駆動系の性能劣化及び動作不良を検知する手段を有し、性能劣化検知時に警報を発する発報手段を有し、搬送異常が発生する前に復旧作業を可能とするという構成を備えたものである。 In order to solve the above-described problems, the substrate transport apparatus of the present invention includes a means for driving the sensor light emitting unit and the sensor light receiving unit, and has a configuration in which the sensor optical path is movable. It also has means for receiving, recording, and calculating sensor output signals, and has means for detecting sensor deterioration, performance deterioration of wafer cassette stage drive system and malfunction from the amount of change in sensor output. It has a structure that has a reporting means for issuing an alarm when the deterioration is detected, and that enables recovery work before a conveyance abnormality occurs.
以上のように、本発明は、センサー発光部とセンサー受光部を駆動させる手段と、センサー出力信号を受信及び記録及び演算を可能とする手段と、センサー出力の変移量からセンサー劣化及びウエハカセットステージ駆動系の性能劣化及び動作不良を検知する手段と、性能劣化検知時に警報を発する発報手段と、を設ける事により、搬送異常が発生する前に復旧作業を可能にすることができる。 As described above, the present invention provides a means for driving the sensor light emitting part and the sensor light receiving part, a means for receiving, recording and calculating the sensor output signal, and the sensor deterioration and wafer cassette stage from the amount of change in the sensor output. By providing means for detecting performance deterioration and malfunction of the drive system and reporting means for issuing an alarm when the performance deterioration is detected, it is possible to perform recovery work before a conveyance abnormality occurs.
以下、本発明の実施形態の基板搬送装置について、図面を参照しながら説明する。 Hereinafter, a substrate transfer apparatus according to an embodiment of the present invention will be described with reference to the drawings.
図１は本実施形態における基板搬送装置の構成を示す図であって、（ａ）は側面図、（ｂ）は平面図、（ｃ）は斜視図である。 1A and 1B are diagrams showing a configuration of a substrate transfer apparatus according to the present embodiment. FIG. 1A is a side view, FIG. 1B is a plan view, and FIG. 1C is a perspective view.
図１において、１はウエハである。２は、ウエハカセットであって、５〜１０ｍｍピッチでウエハを収納するスロットが形成されており、直径２００ｍｍウエハ１を２５枚水平に収納できる。３は、カセットステージであって、ウエハカセット２を保持し、図示を省略した駆動系により上下方向に駆動できる。４はセンサー発光部、５は、センサー受光部であって、光路がウエハカセット２内を通過するように装置に固定されて透過型センサーを構成している。６は搬送アームでウエハカセット２内から図示を省略した基板処理部へウエハ１を搬送する。７は、ＣＩＭであって、ウエハカセット内のウエハ枚数及びスロット位置を含む処理情報を統括する。８は、基板搬送制御部であって、透過型センサーによるウエハカセット２内のウエハ枚数とスロット位置の計測結果とＣＩＭ７内のデータと照合し基板処理部への搬送可否を判断する。９は、モニタリングシステムであって、センサー受光部５の出力電圧およびＣＩＭ７より処理中のウエハのロット情報を収集、記録及びデータ解析を行う。 In FIG. 1, reference numeral 1 denotes a wafer. A wafer cassette 2 is formed with slots for storing wafers at a pitch of 5 to 10 mm and can horizontally store 25 wafers 1 having a diameter of 200 mm. A cassette stage 3 holds the wafer cassette 2 and can be driven in the vertical direction by a drive system (not shown). Reference numeral 4 denotes a sensor light emitting unit, and reference numeral 5 denotes a sensor light receiving unit, which is fixed to the apparatus so that the optical path passes through the wafer cassette 2 and constitutes a transmission type sensor. Reference numeral 6 denotes a transfer arm that transfers the wafer 1 from the wafer cassette 2 to a substrate processing unit (not shown). Reference numeral 7 denotes a CIM, which supervises processing information including the number of wafers in the wafer cassette and the slot position. Reference numeral 8 denotes a substrate transfer control unit, which compares the number of wafers in the wafer cassette 2 and the measurement result of the slot position with the transmission sensor and the data in the CIM 7 to determine whether transfer to the substrate processing unit is possible. A monitoring system 9 collects, records, and analyzes data on the output voltage of the sensor light receiving unit 5 and the lot information of the wafer being processed from the CIM 7.
図２は本実施形態におけるセンサー電圧とカセット内のウェハ位置の関係を示す図である。時系列に２組のセンサーで２５枚のウエハを計測し、少なくとも１組のセンサーで４枚目及び１９枚目及び２４枚目の３枚のウエハを未検出状態であることを示している。 FIG. 2 is a diagram showing the relationship between the sensor voltage and the wafer position in the cassette in this embodiment. It shows that 25 wafers are measured by two sets of sensors in time series, and at least one set of sensors indicates that the fourth, 19th, and 24th wafers are in an undetected state.
図３は本実施形態におけるセンサーの駆動部の概略を示す側面図である。 FIG. 3 is a side view illustrating the outline of the driving unit of the sensor in the present embodiment.
１１は発光素子、１２は第１の台板で発光素子１１を固定している、１３は長さが一定の固定部、１４ａおよび１４ｂは圧電素子で電圧により長さが変動する。１５は第２の台板で固定部１３および圧電素子１４を装置本体に固定する。 11 is a light emitting element, 12 is a first base plate that fixes the light emitting element 11, 13 is a fixed part having a fixed length, 14 a and 14 b are piezoelectric elements, and the length varies with voltage. Reference numeral 15 denotes a second base plate that fixes the fixing portion 13 and the piezoelectric element 14 to the apparatus main body.
図４は本実施形態におけるセンサーの光路を示す図であって、（ａ）と（ｂ）は光路が基板中心からｒ√２の位置を通る場合の側面図と平面図、（ｃ）と（ｄ）は光路が基板中心を通る場合の側面図と平面図である。図４を参照して本実施形態の基板半増装置の動作について説明する。 4A and 4B are diagrams showing the optical path of the sensor in this embodiment. FIGS. 4A and 4B are a side view and a plan view when the optical path passes through the position of r√2 from the substrate center, and FIGS. d) A side view and a plan view when the optical path passes through the center of the substrate. With reference to FIG. 4, operation | movement of the board | substrate half increase apparatus of this embodiment is demonstrated.
まず、図４（ａ）および（ｂ）に示すように、ウエハカセット２の基板間隔（ピッチ）が５ｍｍで、ウエハ１の基板直径２００ｍｍの場合、基板中心より外周方向へ１００√２ｍｍの位置を通過するセンサー光路において、図３に示す圧電素子（たとえばピエゾ素子）１４ａおよび１４ｂに電圧をかけ長さを変化させる事で固定部１３とカンチレバーを構成し微少角度を約１．９度に設定する。このときウエハ１がウエハカセット２に正常にセットされているときはセンサー光路が遮られず、ウエハ１が５ｍｍ飛び出した場合にはセンサー光路が遮られるように設定する。 First, as shown in FIGS. 4A and 4B, when the substrate interval (pitch) of the wafer cassette 2 is 5 mm and the substrate diameter of the wafer 1 is 200 mm, the position of 100√2 mm from the substrate center to the outer peripheral direction is set. In the passing sensor optical path, a voltage is applied to the piezoelectric elements (for example, piezo elements) 14a and 14b shown in FIG. 3 to change the length, thereby constituting the fixed portion 13 and the cantilever, and setting the minute angle to about 1.9 degrees. . At this time, the setting is made so that the sensor optical path is not blocked when the wafer 1 is normally set in the wafer cassette 2 and is blocked when the wafer 1 protrudes 5 mm.
また、図４（ｃ）および（ｄ）に示すように、ウエハ１の基板直径２００ｍｍの場合、基板中心より通過するセンサー光路において図３に示すセンサー光路微少角度を約１．４度に設定する。 Further, as shown in FIGS. 4C and 4D, when the substrate diameter of the wafer 1 is 200 mm, the sensor optical path minute angle shown in FIG. 3 is set to about 1.4 degrees in the sensor optical path that passes from the center of the substrate. .
この結果、ウエハカセット２内のスロットにウエハ有無を検知することが可能である事に加え、５ｍｍ以上の基板位置ずれ（ウエハカセットからの飛び出し）が発生した場合、ウエハ間隔での受光すべき信号が遮断されるため位置ずれ（ウエハカセットからの飛び出し）を検出可能になる。また、受光時間の変動から、５ｍｍ以下の基板位置ずれの検知も可能になる。なお、ウエハサイズ、ウエハの厚み、スロット間隔などプロセスによる変動や径時変化による光路修正が必要な場合、また、検出感度の変動に応じて圧電素子の長さを変化させる事で光路を変更する事ができる。 As a result, in addition to being able to detect the presence / absence of a wafer in the slot in the wafer cassette 2, a signal to be received at the wafer interval when a substrate misalignment of 5 mm or more (out of the wafer cassette) occurs. Since this is cut off, it becomes possible to detect misalignment (protrusion from the wafer cassette). Further, it is possible to detect a substrate position shift of 5 mm or less from fluctuations in the light receiving time. If the optical path needs to be corrected due to process variations such as wafer size, wafer thickness, slot interval, or changes in diameter, the optical path is changed by changing the length of the piezoelectric element in response to variations in detection sensitivity. I can do things.
次に、図１に示すように、ウエハ１はウエハカセット２のスロットに挿入されカセットステージ３上に搬送される。カセットステージ３はウエハカセット搬送位置より垂直方向の上方へ駆動し、センサー発光部４及びセンサー受光部５によりウエハカセット２内のウエハ枚数とスロット位置を計測する。このとき、センサー発光部４から投光した光はセンサー受光部５で受光し電気信号へ変換され、センサー強度信号を電圧で出力する。基板搬送制御部８は、センサー受光部５より出力された電圧と、カセットステージ駆動量からウエハカセット２内のウエハ枚数とスロット位置を計測し、その結果をＣＩＭ７内のデータと照合する。ＣＩＭ７は前記データ照合の結果、基板処理部への搬送可否を判断する。 Next, as shown in FIG. 1, the wafer 1 is inserted into the slot of the wafer cassette 2 and conveyed onto the cassette stage 3. The cassette stage 3 is driven upward in the vertical direction from the wafer cassette transfer position, and the sensor light emitting unit 4 and the sensor light receiving unit 5 measure the number of wafers and the slot position in the wafer cassette 2. At this time, the light projected from the sensor light emitting unit 4 is received by the sensor light receiving unit 5 and converted into an electrical signal, and the sensor intensity signal is output as a voltage. The substrate transfer control unit 8 measures the number of wafers and the slot position in the wafer cassette 2 from the voltage output from the sensor light receiving unit 5 and the cassette stage driving amount, and collates the result with the data in the CIM 7. The CIM 7 determines whether or not conveyance to the substrate processing unit is possible as a result of the data collation.
次に、搬送可否の判断について説明する。前記ウエハ枚数とスロット位置をＣＩＭ７に登録されているデータと照合する。照合の結果、ＣＩＭデータと一致した場合は、ウエハカセット２内のウエハ１を搬送アーム６により基板処理部へ搬送する。また、基板処理部への搬送時には搬送アーム６のウエハ取り出し位置をカセットステージ駆動量よりウエハカセットの個体差によるスロット位置やウエハ反りによる微少変動を検知し、搬送アームとウエハステージ上下動位置の補正を行う。また、照合の結果、ＣＩＭデータと不一致の場合は、ＣＩＭ７への通信、装置操作パネルでの異常表示などの異常発報を行う。以後のウエハ１の搬送動作を停止する。 Next, determination of whether or not conveyance is possible will be described. The number of wafers and the slot position are collated with data registered in the CIM 7. As a result of the collation, if it matches the CIM data, the wafer 1 in the wafer cassette 2 is transferred to the substrate processing unit by the transfer arm 6. In addition, when the wafer is transferred to the substrate processing unit, the wafer take-off position of the transfer arm 6 is detected from the cassette stage driving amount to detect a minute variation due to the wafer cassette warpage and the position of the wafer arm and the wafer stage warp. I do. If the result of the collation does not match the CIM data, an abnormality is reported such as communication to the CIM 7 or an abnormality display on the device operation panel. The subsequent transfer operation of the wafer 1 is stopped.
次に、センサー劣化やウエハカセットステージ駆動系の性能劣化及び動作不良を検知について説明する。 Next, detection of sensor deterioration, performance deterioration of the wafer cassette stage drive system and malfunction will be described.
モニタリングシステム９はセンサー受光部５より出力された電圧とＣＩＭ７からウエハカセット２内のウエハ情報を収集し、時系列に電圧とウエハ情報を記録する。ウエハカセット２の装置内搬入後からの記録収集頻度は、本実施例では１Ｈｚから１０Ｈｚ（１秒間に１回から１０回）であるが、前記電圧及びウエハ情報の変動頻度に応じて変更可能である。前記センサー強度信号の電圧は、前記センサーの光路がウエハ１等で遮られた時点（遮光時）で出力が０Ｖになり、前記光路が遮られない場合（透過時）は６．５Ｖを出力するように設定されている。受光状態の変動により電圧も変動するため、電圧が３．５Ｖ以上の場合に透過と判断し、電圧が１．５Ｖ未満の場合に遮光と判断しウエハ２の有無と位置を計測する。 The monitoring system 9 collects the wafer information in the wafer cassette 2 from the voltage output from the sensor light receiving unit 5 and the CIM 7 and records the voltage and wafer information in time series. The record collection frequency after the wafer cassette 2 is carried into the apparatus is 1 Hz to 10 Hz (1 to 10 times per second) in this embodiment, but can be changed according to the fluctuation frequency of the voltage and wafer information. is there. The voltage of the sensor intensity signal is 0 V when the optical path of the sensor is blocked by the wafer 1 or the like (when light is blocked), and 6.5 V when the optical path is not blocked (when transmitted). Is set to Since the voltage also fluctuates due to fluctuations in the light receiving state, it is determined that transmission is performed when the voltage is 3.5 V or higher, and light is blocked when the voltage is less than 1.5 V, and the presence and position of the wafer 2 are measured.
カセットステージ３の駆動に異常があり、上昇速度が変動する場合は、前記センサー強度信号の電圧が遮光時に０Ｖまで低下しない、または透過時に６．５Ｖまで上昇しないという状況が発生する。 When there is an abnormality in the driving of the cassette stage 3 and the rising speed fluctuates, a situation occurs in which the voltage of the sensor intensity signal does not decrease to 0 V when light is blocked or does not increase to 6.5 V when transmitted.
図２に示すように、センサー強度信号の電圧を時系列にウエハカセットの位置と関連付けて測定する事により、カセットステージの特定起動位置でセンサー電圧の遮光時の上昇またはセンサー電圧透過時の下降を検知し、あらかじめ設定した電圧まで低下した（例えば透過時の電圧が５Ｖまで低下した）際に、カセットステージ駆動異常を発報することにより、ウエハ検知不能になる前にステージ駆動異常の検知を可能にする。 As shown in FIG. 2, the voltage of the sensor strength signal is measured in time series in association with the position of the wafer cassette, thereby increasing the sensor voltage at the specific activation position of the cassette stage when the sensor voltage is shielded or decreasing when the sensor voltage is transmitted. By detecting and lowering to a preset voltage (for example, when the transmission voltage drops to 5V), it is possible to detect a stage drive abnormality before wafer detection becomes impossible by issuing a cassette stage drive abnormality. To.
また、複数回のウエハカセット駆動時のセンサー電圧を記録し、あらかじめ設定した回数（例えば連続で３回）をあらかじめ設定した電圧まで低下した際に、カセットステージ駆動異常を発報することにより、ウエハ検知不能になる前にステージ駆動異常の検知を可能にする。 Also, by recording the sensor voltage when driving the wafer cassette a plurality of times and reporting the cassette stage drive abnormality when the preset number of times (for example, three consecutive times) is reduced to the preset voltage, Enables detection of stage drive error before detection becomes impossible.
さらに、センサー強度信号の電圧を時系列にウエハカセットの位置と関連付けて表示することにより、駆動異常の発生するウエハカセット位置が容易に解析し、駆動系修理の再に早期に復旧が可能と成る。 Furthermore, by displaying the voltage of the sensor strength signal in time series in association with the position of the wafer cassette, the position of the wafer cassette where the drive abnormality occurs can be easily analyzed, and the drive system repair can be quickly restored. .
以上のように本実施例によれば、センサー出力信号を受信及び記録及び演算を可能とする手段と、前記センサー出力の変移量からセンサー劣化及びウエハカセットステージ駆動系の性能劣化及び動作不良を検知する手段と、性能劣化検知時に警報を発する発報手段と、を設けることにより、搬送異常が発生する前に復旧作業を可能にする事ができる。 As described above, according to this embodiment, the sensor output signal can be received, recorded, and computed, and the sensor deterioration and the wafer cassette stage drive system performance deterioration and malfunction can be detected from the amount of change in the sensor output. By providing the means for performing the operation and the issuing means for issuing an alarm when the performance deterioration is detected, it is possible to perform the recovery work before the conveyance abnormality occurs.
なお、本実施例ではセンサーを固定しウエハカセットを駆動させウエハを計測しているが、センサーを駆動させてもよい。また本実施例では透過型センサーを用いたが反射型センサーや非光学的センサーを用いても同様の効果が得られる。 In this embodiment, the sensor is fixed and the wafer cassette is driven to measure the wafer. However, the sensor may be driven. In this embodiment, a transmissive sensor is used, but the same effect can be obtained by using a reflective sensor or a non-optical sensor.
また、センサー光路中に鏡（ミラー）やレンズを１つ以上入れる事によりセンサー受光部に効率よく集光できる。また、センサー受光部をアレイ状に配置する事によっても同様の効果が得られる。本実施例ではセンサー発光部を駆動させ航路を変化させたが、光路中に設置した鏡（ミラー）やレンズを駆動させても同様の効果が得られる。 In addition, by putting one or more mirrors or lenses in the sensor optical path, the sensor light can be efficiently condensed. The same effect can be obtained by arranging the sensor light receiving portions in an array. In the present embodiment, the sensor light emitting unit is driven to change the navigation path, but the same effect can be obtained by driving a mirror or a lens installed in the optical path.
図５は上記の配置の構成例を説明するための光路中の光学部品の位置関係を示す図であって、１６は鏡、１７はレンズを示す。 FIG. 5 is a diagram showing the positional relationship of the optical components in the optical path for explaining a configuration example of the above arrangement, in which 16 indicates a mirror and 17 indicates a lens.
図５において、（ａ）は鏡１６をセンサー光路における基板通過後に設置した例を示し、（ｂ）は鏡１６をセンサー光路における基板通過前に設置した例を示す。さらに（ｃ）はレンズ１７をセンサー光路における基板通過後に設置した例を示す。 5A shows an example in which the mirror 16 is installed after passing through the substrate in the sensor optical path, and FIG. 5B shows an example in which the mirror 16 is installed before passing through the substrate in the sensor optical path. Further, (c) shows an example in which the lens 17 is installed after passing through the substrate in the sensor optical path.
本発明の基板搬送装置は、センサー出力信号を受信及び記録及び演算を可能とする手段と、センサー出力の変移量からセンサー劣化及びウエハカセットステージ駆動系の性能劣化及び動作不良を検知する手段と、性能劣化検知時に警報を発する発報手段とを有し、半導体製造のウエハカセットから装置処理部へウエハを搬送する工程における基板搬送装置として有用である。また、フラットパネル搬送等の用途にも応用できる。 The substrate transfer apparatus of the present invention includes means for receiving, recording and calculating sensor output signals, means for detecting sensor deterioration and wafer cassette stage drive system performance deterioration and malfunction from the sensor output shift amount, And a means for issuing an alarm when detecting performance deterioration, and is useful as a substrate transfer apparatus in a process of transferring a wafer from a wafer cassette of semiconductor manufacturing to an apparatus processing section. Also, it can be applied to applications such as flat panel conveyance.
１ ウエハ
２ ウエハカセット
３ カセットステージ
４ センサー発光部
５ センサー受光部
６ 搬送アーム
７ ＣＩＭ
８ 基板搬送制御部
９ モニタリングシステム
１１ 発光素子
１２ 第１の台板
１３ 固定部
１４ 圧電素子
１５ 第２の台板
１６ 鏡
１７ レンズ
DESCRIPTION OF SYMBOLS 1 Wafer 2 Wafer cassette 3 Cassette stage 4 Sensor light emission part 5 Sensor light-receiving part 6 Transfer arm 7 CIM
8 Substrate Transport Control Unit 9 Monitoring System 11 Light Emitting Element 12 First Base Plate 13 Fixing Unit 14 Piezoelectric Element 15 Second Base Plate 16 Mirror 17 Lens
Claims (8)
前記センサーの出力信号を受信する手段と、
前記センサーの出力信号を記録する手段と、
前記センサーの出力信号を演算する手段と、
前記センサーの出力の変移量を検知する手段と、
前記変移量があらかじめ設定した値になると警報を発報する手段とを備えたことを特徴とする基板搬送装置。 In the substrate transfer device that measures the substrate position of the substrate storage unit using the sensor and then transfers the substrate from the substrate storage unit,
Means for receiving an output signal of the sensor;
Means for recording the output signal of the sensor;
Means for calculating an output signal of the sensor;
Means for detecting the amount of change in the output of the sensor;
And a means for issuing an alarm when the amount of change reaches a preset value.
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