JP2009094282A - High-power light emitting diode structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-power light emitting diode structure which can be increased in luminance and lowered in temperature. <P>SOLUTION: The high-power light emitting diode structure is constituted by providing a heat conduction plate to a substrate bottom portion, laying a plurality of insulating films on an upper surface of the heat conduction plate, providing a plurality of electric contacts projecting from an insulating film surface, providing at least one epitaxial chip in an electric contact in a center, providing a plurality of injection holes having a heat conducting function at a periphery of the epitaxial chip, forming a frame capable of covering the epitaxial chip periphery on the substrate using an injection system, forming a plurality of lock portions on a frame bottom surface, engaging the plurality of lock portions with the injection holes of the substrate for positioning, providing a light transparent cover made of a light transparent material on a frame upper surface, and surely joining the epitaxial chip bottom surface to the heat conduction plate to quickly dissipate heat, thereby increasing emission light source luminance by refraction of light on an arcuate convex surfaces on the light transparent cover. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a kind of high-power light emitting diode structure, and in particular, forms a frame on the substrate by an injection method, and positions the bottom of the frame by engaging the substrate with a locking portion, and also has an arc convex shape on the frame. The present invention relates to a high-power light-emitting diode structure that achieves the purpose of increasing the heat dissipation and light source brightness by attaching a transparent cover having a surface.

  With the rapid advancement of science and technology, technology products are increasingly being used in daily life, increasing the convenience of life, and some products are indispensable for daily life, For example, an electric lamp is one of such products, and an electric lamp is one of daily necessities unless sufficient sunlight is obtained or special cases. With the advancement of science and technology, the bulbs have been improved and progressed from kerosene lamps, carbide lamps and tungsten lamps to fluorescent lamps, quartz lamps and xenon lamps currently used.

  In addition, with the advent and improvement of light emitting diodes, light emitting diodes are now being used in place of old bulbs, and light emitting diodes have high brightness, long life, can save electricity, start up quickly, and are free from contamination. Many manufacturers have entered into research and development and improvement of light-emitting diodes because of their advantages such as recoverability, low price, robustness, and low heat generation.

  However, in general, when using a light emitting diode, the brightness is relatively small and the light diffuses and does not concentrate, so that the lighting function cannot be achieved in actual use. Therefore, manufacturers research and develop high power light emitting diodes. Even though the high power light emitting diode has a relatively high luminance, it generates high temperature and high heat, so that its service life is shortened. Therefore, manufacturers have made the following improvements to this problem.

  Please refer to FIGS. The heat conducting plate B having a heat conducting function is provided on the heat sink A, the reflection groove B1 recessed downward is provided in the center of the heat conducting plate B, the chip B11 is provided in the reflection groove B1, and both sides of the chip B11 are provided as conductors. B111 is electrically connected to the circuit B2 provided on the heat conducting plate B, further provided with a resin C in the reflection groove B1, further provided with a fixing ring D above the resin C, and attached to the reflection groove B1 with the chip B11. In addition, after a plurality of conductors B111 are electrically connected to the chip B11 and the circuit B2 by a bonding machine, the resin C is injected into the reflection groove B1, the chip B11 and the conductor B111 are positioned, and the resin C is fixed by the fixing ring D. Are fixed to the upper surface of the heat conducting plate B, and finally the heat conducting plate B is screwed to the upper surface of the heat sink A.

When the above-described conventional high power light emitting diode is actually used, the heat conduction plate B allows the high heat of the chip B11 to be conducted to the heat sink A to be dissipated, thereby achieving the purpose of lowering the temperature of the chip B11. For example, it has many problems and disadvantages to be improved.
(1) It is necessary to cut the reflection groove B1 on the heat conducting plate B. However, since the heat conducting plate B is thin and has a small volume, the cutting operation of the reflecting groove B1 is difficult and cumbersome. In addition, a non-flat condition is likely to occur on the surface of the reflection groove B1, a defective product is easily generated when the chip B11 and the conductor B111 are attached, the defect rate is high, and the uneven surface of the reflection groove B1 is the chip B11. Distorts and refracts the light beam emitted from the high power light emitting diode.
(2) When the chip B11 is actually used, high heat is generated, and the resin C coats the outside of the chip B11. Therefore, the resin C is affected by the high temperature generated by the chip B11 and the resin C bursts. In addition, the function of preventing dust and contact cannot be achieved.
Therefore, in view of the above problems and disadvantages, the present invention provides a high-power light-emitting diode structure that can rapidly dissipate heat and increase light emission luminance.

The invention of claim 1 is a high power light emitting diode structure capable of increasing the brightness and lowering the temperature, including a substrate and a frame, a heat conducting plate provided at the bottom of the substrate, and a plurality of surfaces on the upper surface of the heat conducting plate. An insulating film is laid, a plurality of electrical contacts protruding from the surface of the insulating film are provided, and at least one epitaxial chip is provided in the central electrical contact, and a plurality of injection holes are provided around the epitaxial chip. The frame is formed by injection molding to cover the periphery of the epitaxial chip, and a locking portion that is coupled to the injection hole is injection-molded at the bottom of the frame into the injection hole of the substrate. A high power light-emitting diode structure is provided.
The invention according to claim 2 is the high power light emitting diode structure according to claim 1, wherein the heat conducting plate is manufactured by plating silver on a copper material.
The invention of claim 3 is the high power light emitting diode structure according to claim 1, wherein the insulating film is made of an epoxy material.
According to a fourth aspect of the present invention, in the high-power light-emitting diode structure according to the first aspect, a plurality of circuits and electrical contacts are provided on the insulating film, and another insulating film is provided above the circuit. A high power light emitting diode structure is characterized in that it protrudes from the surface of the insulating film.
According to a fifth aspect of the present invention, in the high-power light-emitting diode structure according to the first aspect, a heat conducting area is provided in the electrical contact at the center of the substrate, and at least one epitaxial chip is provided in the heat conducting area. A high-power light-emitting diode structure is provided in which conductive wires that form electrical connections with electrical contacts are provided on both sides of each.
According to a sixth aspect of the present invention, in the high power light emitting diode structure according to the first aspect, the frame is a block body formed by injection molding liquid crystal polymer (LCP) or other insulation into a rectangular or other shape. This is a high power light emitting diode structure.
According to a seventh aspect of the present invention, in the high power light emitting diode structure according to the first aspect, an arc-shaped hollow portion surrounding the epitaxial chip and gradually shrinking downward is provided at the center of the frame, and the side wall of the hollow portion is provided. A reflective surface capable of concentrating the light beam emitted from the epitaxial chip is provided, and a sealing resin body formed of a silicon resin material and covering and positioning the epitaxial chip is provided in the hollow portion. High power light emitting diode structure.
According to an eighth aspect of the present invention, in the high power light emitting diode structure according to the first aspect, a plurality of the locking portions are formed at each corner of the bottom surface of the frame. Yes.
According to a ninth aspect of the present invention, there is provided a high power light emitting diode structure according to the first aspect, wherein a translucent cover made of a translucent material is provided on an upper surface of the frame. Yes.
According to a tenth aspect of the present invention, in the high power light emitting diode structure according to the ninth aspect, the engaging holes are provided on both opposing sides of the frame, and the engaging holes correspond to the opposing holes on the opposite sides of the bottom of the transparent cover. Thus, a high power light emitting diode structure is provided in which an engagement piece to be engaged and positioned is provided.
The eleventh aspect of the present invention is the high power light emitting diode structure according to the first aspect, wherein a heat sink is provided below the substrate.
The invention of claim 12 is the high-power light-emitting diode structure according to claim 11, wherein the heat sink is made of aluminum, and a plurality of strip-like fins are extended downward at the bottom thereof. High power light emitting diode structure.
According to a thirteenth aspect of the present invention, in the high power light emitting diode structure according to the first aspect, the injection hole of the substrate has a reverse T shape or a speaker shape that gradually expands downward, and the shape of the locking portion at the bottom of the frame is The high-power light-emitting diode structure corresponds to the injection hole and derives heat of the epitaxial chip.

  The present invention provides a high-power light-emitting diode structure in which a frame is formed on a substrate by an injection molding method, a locking portion is provided at the bottom of the frame and can be coupled into an injection hole of the substrate, and the frame When the epitaxial chip is accommodated in the hollow portion of the frame, the light beam emitted by the epitaxial chip is concentrated on the reflective surface and reaches the translucent cover above the frame. The light is refracted by the arc-shaped convex surface on the upper part of the translucent cover and emitted outward, thereby increasing the brightness of the emitted light.

  The present invention also eliminates the need to provide a concave groove for accommodating and sealing an epitaxial chip on the substrate in a high-power light-emitting diode structure, and thus an insulating film on the heat conducting plate having a flat surface of the substrate, When laying circuits and electrical contacts, it is possible to achieve the molding step by primary processing and to save the number of process steps, and the flat surface of the heat conducting plate makes it convenient for the installation work of the epitaxial chip and conductor, and the epitaxial chip The bottom part of the semiconductor chip is completely joined to the surface of the heat sink to increase the heat dissipation area and increase the heat dissipation rate of the epitaxial chip.

  The present invention also provides a high-power light emitting diode structure in which the epitaxial chip is mounted in a hollow portion of the frame, and the amount of heat of the epitaxial chip is conducted to a heat sink by a heat conducting plate to rapidly dissipate and cool down. It is possible to prevent the sealing resin formed so as to cover the epitaxial chip by the packaging process from rupturing at a high temperature, and to achieve the purpose of protecting the epitaxial chip, such as dust prevention and collision prevention.

  1, 2 and 3 are a three-dimensional external view, a three-dimensional exploded view, and a side sectional view of the present invention. As is apparent from these drawings, the high power light emitting diode structure is composed of a substrate 1, a frame 2, a heat sink 3, and the like.

  A heat conductive plate 11 manufactured by plating silver on a copper material is provided at the bottom of the substrate 1, and an insulating film 12 made of an epoxy resin material is laid on the upper surface of the heat conductive plate 11. A plurality of electrical contacts 14 that can project from the surface of the insulating film 12, a heat conduction area 141 is provided at the central electrical contact 14, and at least one epitaxial chip 15 is provided on the heat conduction area 141; and Conductive wires 151 are provided on both sides of the epitaxial chip 15, a plurality of injection holes 16 provided for heat conduction are provided around the epitaxial chip 15, and screw holes 17 are provided on both sides of the substrate 1.

  The frame 2 is a rectangular block formed by injection-molding a liquid crystal polymer (LCP) or other insulating material, and an arcuate hollow portion 21 that gradually decreases downward is provided at the center of the frame 2. A reflection surface 211 is provided on the side wall of the portion 21, a plurality of locking portions 22 are formed at each corner of the bottom surface of the frame 2, and locking holes 23 are provided on both sides of the arcuate hollow portion 21 of the frame 2. Further, a translucent sealing resin body 24 made of a silicon resin material is provided in the hollow portion 21, and a translucent cover 25 made of a translucent material is provided on the upper surface of the frame 2. The engaging pieces 251 are provided on the opposite sides of the bottom of the translucent cover 25.

  The heat sink 3 is made of an aluminum material, and a plurality of strip-shaped fins 31 are provided on the bottom of the heat sink 3, and a plurality of screw holes 32 are provided in the heat sink 3.

  When combining the above-described components, the frame 2 is molded by an injection molding method using a mold above the substrate 1, and the plurality of engaging portions 22 at the bottom of the frame 2 are formed into the plurality of injection holes of the substrate 1. Position within 16 to achieve positioning. At this time, a sealing resin body 24 is provided in the hollow portion 21 of the frame 2 using the packaging process, the sealing resin body 24 is covered with the outer side of the epitaxial chip 15 of the substrate 1, and the transparent resin is permeable above the frame 2. A light cover 25 is attached, and the light-transmitting cover 25 is positioned by utilizing the engagement of the plurality of engagement pieces 251 at the bottom to the engagement holes 23 of the frame 2, thus forming the main device, and further the substrate 1. It fixes to the upper surface of the heat sink 3, and another main body apparatus is formed.

  The heat conducting plate 11 of the substrate 1 is made of copper, aluminum, or other heat conducting material, and a heat conducting area 141 for fixing the epitaxial chip 15 is provided in the electrical contact 14 of the substrate 1. Forms an electrical connection with the circuit 13 by the conductive wire 151, and the insulating film 12 may or may not be laid in the heat conducting area 141, which has the function of conducting the thermal energy of the epitaxial chip 15 to the heat sink 3. It does not limit the scope of the present invention, and any other modifications or structural changes that have an equivalent effect are all within the scope of the present invention.

  Please refer to FIGS. As is apparent from the figure, after molding the frame 2 on the substrate 1 by the injection method, at least one epitaxial chip 15 on the substrate 1 is accommodated in the hollow portion 21 of the frame 2, and further the hollow portion A sealing resin body 24 is provided in 21, and a translucent cover 25 is attached above the sealing resin body 24. The translucent cover 25 is positioned by engaging a plurality of engaging pieces 251 below the corresponding engaging holes 23 of the sealing resin body 24, and when the epitaxial chip 15 emits light, the light is transmitted to the frame 2. Reflected and concentrated using the reflecting surface 211 on the side wall of the hollow portion 21 of the hollow portion 21, and after the light beam is reflected, it passes through the translucent cover 25 and is refracted by the arc-shaped convex surface at the top of the translucent cover 25, It is fired in the direction, so that the present invention has the effect of increasing the light intensity.

  The translucent cover 25 is integrally molded by injection molding a translucent material in a mold, which is not only easy to manufacture but also low in manufacturing cost and can be independently manufactured. The cover 25 is quickly mounted in the locking hole 23 of the frame 2 using the engagement piece 251. Thus, the assembly and positioning operation can be completed. The assembly is simple and quick, and the production speed of the production line is increased. it can.

  Further, when the insulating film 12, the plurality of circuits 13, and the electrical contacts 14 are installed on the flat surface of the heat conducting plate 11 of the substrate 1, the substrate 1 can be processed by printing or other methods, reducing the processing steps. The processing yield can be increased.

  After forming the sealing resin body 24 using resin, the epitaxial chip 15 is directly fixed and connected to the substrate 1. When the epitaxial chip 15 continuously emits light and generates a large amount of heat, the amount of heat is reduced to the copper below it. The heat is transferred to the heat sink 3 through the heat conducting plate 11 made of the material, and then the amount of heat is dissipated into the air through the plurality of strip-like fins 31 at the bottom of the heat sink 3 to achieve the purpose of enhancing the heat dissipation effect of the epitaxial chip 15. There is an advantage that the temperature of the epitaxial chip 15 can be reliably lowered by the above-described heat dissipation path, and the lifetime of the epitaxial chip 15 is shortened due to the high heat generated when the epitaxial chip 15 is used, thereby extending the service life. To do.

  The heat sink 3 is made of aluminum, copper, graphite or other heat conducting material, and a plurality of fins 31 extending to the bottom of the heat sink 3 are strip-shaped, strip-shaped, or other shapes that can increase the heat radiation area. The epitaxial chip 15 only needs to have a function of rapidly dissipating the amount of heat conducted through the substrate 1 to lower the temperature of the epitaxial chip 15, and does not limit the scope of the present invention. Any other modifications or equivalent structural changes are within the scope of the present invention.

  In addition, the sealing resin body 24 is installed in the hollow portion 21 of the frame 2, and the high heat dissipated from the epitaxial chip 15 is rapidly and uniformly conducted to the copper substrate 1 of the substrate 1, and further the bottom surface of the heat conducting plate 11 The temperature lowering is achieved by the heat dissipation of the heat sink 3 bonded to the heat sink 3, but the sealing resin body 24 covering the epitaxial chip 15 is also lowered by the frame 2. Since the frame 22 has its engaging portion 22 in contact with the heat sink 3 through the injection hole 16 of the substrate 1, not only the amount of heat of the epitaxial chip 15 is transmitted to the heat conducting plate 11 of the substrate 1 but also directly transmitted to the heat sink 3, The temperature of the epitaxial chip 15 itself decreases, and therefore the temperature of the sealing resin body 24 covering the epitaxial chip 15 also decreases, and the sealing resin body 24 does not rupture due to the temperature decrease, and the epitaxial chip 15 by the sealing resin body 24 reliably. The purpose of protection can be achieved, and the sealing resin body 24 can be provided with good dustproof and collision prevention functions.

  The frame 2 and the translucent cover 25 may be rectangular, circular, elliptical, or other geometric shapes, and the frame 2 accommodates the epitaxial chip 15 and the conductive wire 151 and is used for covering positioning by the sealing resin body 24. The translucent cover 25 is used for packaging work. The translucent cover 25 not only protects the outside of the sealing resin body 24 but also has a function of calibrating the shape and angle of light, and the translucent cover is provided above the frame 2. 25 is attached, and a locking portion 22 for engaging with and positioning the substrate 1 is provided at the bottom of the frame 2. However, this does not limit the scope of the claims of the present invention, and all other modifications and equivalent structural changes belong to the scope of the present invention.

  Also, as shown in the side sectional view of the present invention in FIGS. 3 and 4 and the side sectional view of the preferred embodiment, the injection hole 16 of the substrate 1 is formed in a reverse T shape or a speaker shape gradually expanded downward, The shape of the locking portion 22 at the bottom of the frame 2 corresponds to the injection hole 16, which can firmly position the frame 2 above the substrate 1 and can conduct heat of the epitaxial chip 15 to the heat sink 3 through the injection hole 16. This does not limit the scope of the present invention, and all other modifications and equivalent structural changes belong to the scope of the present invention.

The above-described high power light emitting diode structure of the present invention has the following advantages in actual use.
(1) A frame 2 is formed on the substrate 1 by using an injection method, and a locking portion 22 is formed at the bottom of the frame 2 so as to be coupled into the injection hole 16 of the substrate 1, and the frame 2 is hollow. The reflecting surface 211 located on the side wall of the portion 21 is a smooth surface. Therefore, when the epitaxial chip 15 is accommodated in the hollow portion 21 of the frame 2, the light rays emitted from the epitaxial chip 15 are concentrated on the reflecting surface 211 and the frame. 2 reaches the upper transparent cover 25, and is further refracted by the arc-shaped convex surface of the upper part of the transparent cover 25 and emitted to the outside, thereby achieving the object of increasing the emitted light brightness of the present invention.
(2) It is not necessary to cut a concave groove for accommodating and sealing the epitaxial chip 15 on the substrate 1. Therefore, the insulating film 12, the circuit 13, and the heat conductive plate 11 having the flat surface of the substrate 1 are provided. When laying the electrical contacts 14, the purpose of molding can be achieved by primary processing, and the number of manufacturing steps can be saved.
(3) The flat surface of the heat conducting plate 11 is convenient for the installation work of the epitaxial chip 15 and the conducting wire 151, and the bottom of the epitaxial chip 15 is completely joined to the surface of the heat sink 3 to increase the heat dissipation rate of the epitaxial chip 15. Has the advantages of being able to.
(4) The epitaxial chip 15 is provided in the hollow portion 21 of the frame 2, and the epitaxial chip 15 can rapidly dissipate heat through the heat conducting plate 11 and the heat sink 3, and thus is provided in the hollow portion 21 and covers the epitaxial chip 15. The resin body 24 is not ruptured by a high temperature, and the transparent cover 25 is combined to achieve the purpose of reliably protecting the epitaxial chip 15 such as dust prevention and collision prevention, and correcting the light shape and angle.

  Therefore, the present invention forms a frame 2 surrounding the epitaxial chip 15 on the substrate 1 by an injection method with respect to the high power light emitting diode structure, and engages and positions the substrate 1 at the bottom of the frame 2. The portion 22 is formed, and a light transmitting cover 25 is attached on the frame 2 to calibrate the light shape and angle, and the heat sink 3 is screwed to the bottom surface of the substrate 1 to lower the temperature of the epitaxial chip 15 and emit light. Increase the brightness. However, the above description is only a description of a preferred embodiment of the present invention, and does not limit the scope of the present invention. Therefore, simple modifications and equivalents that can be made based on the contents of the specification and drawings of the present invention are equivalent. Any structural changes are within the patent scope of the present invention.

  In summary, when using the above-described high power light emitting diode structure of the present invention, its effects and objects can be reliably achieved.

It is a three-dimensional external view of the present invention. It is a three-dimensional exploded view of the present invention. It is side surface sectional drawing of this invention. 1 is a cross-sectional side view of a preferred embodiment of the present invention. It is a three-dimensional exploded view of a known technique. It is side surface sectional drawing of a well-known technique.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrate 11 Heat conducting plate 15 Epitaxial chip 12 Insulating film 151 Conductor 13 Circuit 16 Injection hole 14 Electrical contact 17 Screw hole 141 Heat conducting area 2 Frame 21 Hollow part 24 Sealing resin body 211 Reflecting surface 25 Translucent cover 22 Locking part 251 Engagement Joint piece 23 Locking hole 3 Heat sink 31 Fin 32 Screw hole A Heat sink B Heat conduction plate B1 Reflection groove B111 Conductor B11 Chip B2 Circuit C Resin D Fixing ring

Claims (13)

  In a high power light emitting diode structure capable of increasing brightness and lowering temperature, including a substrate and a frame, a heat conducting plate is provided at the bottom of the substrate, and a plurality of insulating films are laid on the upper surface of the heat conducting plate, and A plurality of electrical contacts projecting from the surface of the insulating film are provided, and at least one epitaxial chip is provided in the central electrical contact, a plurality of injection holes are provided around the epitaxial chip, and the frame is formed by injection molding. The stopper is formed by covering the periphery of the epitaxial chip, and a locking portion that is coupled to the injection hole toward the inside of the injection hole of the substrate is injection-molded at the bottom of the frame, High power light emitting diode structure.   2. The high power light emitting diode structure according to claim 1, wherein the heat conducting plate is manufactured by plating silver on a copper material.   2. The high power light emitting diode structure according to claim 1, wherein the insulating film is made of an epoxy material.   2. The high power light emitting diode structure according to claim 1, wherein a plurality of circuits and electrical contacts are provided on the insulating film, and another insulating film is provided above the circuit so that the electrical contacts protrude from the surface of the insulating film. A high-power light-emitting diode structure characterized by that.   2. The high power light emitting diode structure according to claim 1, wherein a heat conducting area is provided in an electric contact at the center of the substrate, and at least one epitaxial chip is provided in the heat conducting area, and an electric contact is provided on each side of the epitaxial chip. A high power light emitting diode structure, characterized in that it is provided with a conductor that forms an electrical connection.   2. The high power light emitting diode structure according to claim 1, wherein the frame is a block body formed by injection molding liquid crystal polymer (LCP) or other insulation into a rectangular or other shape. Power light emitting diode structure.   2. The high power light emitting diode structure according to claim 1, wherein an arc-shaped hollow portion surrounding the epitaxial chip and gradually shrinking downward is provided at the center of the frame, and a light beam emitted from the epitaxial chip is formed on a side wall of the hollow portion. A high-power light-emitting diode structure, characterized in that a reflective surface on which the light is concentrated is provided, and a sealing resin body that is formed of a silicon resin material and covers and positions the epitaxial chip is provided in the hollow portion.   2. The high power light emitting diode structure according to claim 1, wherein the plurality of locking portions are formed at each corner of the bottom surface of the frame.   2. The high power light emitting diode structure according to claim 1, wherein a translucent cover made of a translucent material is provided on an upper surface of the frame.   10. The high power light emitting diode structure according to claim 9, wherein locking holes are provided on both opposing sides of the frame, and are engaged and positioned corresponding to the locking holes on both opposing sides of the bottom of the translucent cover. A high-power light-emitting diode structure characterized in that an engagement piece is provided.   2. The high power light emitting diode structure according to claim 1, wherein a heat sink is provided below the substrate.   12. The high power light emitting diode structure according to claim 11, wherein the heat sink is made of aluminum, and a plurality of strip-like fins are extended downward from the bottom thereof.   2. The high power light emitting diode structure according to claim 1, wherein the injection hole of the substrate is a reverse T shape or a speaker shape that gradually expands downward, and the shape of the locking portion at the bottom of the frame corresponds to the injection hole, The high-intensity light emitting diode structure is characterized in that the injection hole derives heat of the epitaxial chip.

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