JP2009087910A - Vapor deposition apparatus and film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To accurately evaporate a necessary amount of organic material by heat to provide an organic thin film with a fine film quality. <P>SOLUTION: In a vapor deposition apparatus, vapor generating devices 20a to 20c are connected to a discharge device 50 to supply vapor while other vapor generating devices 20a to 20c are cut off from the discharge device 50, so that vapors are not mixed together. After film formation, the vapor generating devices 20a to 20c are connected to an exhaust tank while kept cut off from the discharge device 50. The exhaust tank contains cooling means 85a to 85c, on which vapor discharged into the exhaust tank is deposited to form a deposited material 39, which is recovered and reused. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a vapor deposition apparatus and a film forming method using the same.

The organic EL element is one of the display elements that have attracted the most attention in recent years, and has excellent characteristics such as high brightness and fast response speed. In the organic EL element, a light emitting region that emits three different colors of red, green, and blue is disposed on a glass substrate. The light emitting region is an anode electrode film, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode electrode film laminated in this order, and is a color former added in the light emitting layer. Color is red, green, or blue.
A hole transport layer, a light emitting layer, an electron transport layer, and the like are generally made of an organic material, and a vapor deposition apparatus is widely used for forming a film of such an organic material.

  Reference numeral 203 in FIG. 5 is a conventional vapor deposition apparatus, in which a vapor deposition vessel 212 is disposed inside a vacuum chamber 211. The vapor deposition container 212 has a container main body 221, and the upper part of the container main body 221 is closed by a lid portion 222 in which one or more discharge ports 224 are formed.

A powdery organic vapor deposition material 200 is disposed inside the vapor deposition vessel 212.
Heaters 223 are disposed on the side and bottom surfaces of the vapor deposition vessel 212. The inside of the vacuum chamber 211 is evacuated. When the heater 223 generates heat, the vapor deposition vessel 212 is heated, and the organic vapor deposition material 200 in the vapor deposition vessel 212 is heated. Is done.
When the organic vapor deposition material 200 is heated to a temperature equal to or higher than the evaporation temperature, the vapor of the organic material is filled in the vapor deposition vessel 212 and discharged from the discharge port 224 into the vacuum chamber 211.

A holder 210 is disposed above the discharge port 224. If the holder 210 holds the substrate 205, the organic material vapor discharged from the discharge port 224 reaches the surface of the substrate 205, and a hole injection layer or a hole is formed. Organic thin films such as a transport layer and a light emitting layer are formed.
An organic thin film can be sequentially formed on a plurality of substrates 205 by passing the substrates 205 one by one over the discharge port 224 while releasing the organic material vapor.

  However, in order to form a film on a plurality of substrates 205, it is necessary to dispose a large amount of organic material in the vapor deposition container 212. In an actual production site, the organic vapor deposition material 200 in the vapor deposition vessel 212 is exposed to a high temperature for a long time because the film formation process is continuously performed for 120 hours or more while heating the organic material to 250 ° C. to 450 ° C. Thus, it reacts with moisture in the vapor deposition vessel 212 and changes its quality, or decomposition by heating proceeds. As a result, the organic vapor deposition material 200 is deteriorated compared to the initial state, and the film quality of the organic thin film is deteriorated.

  In addition, when a plurality of types of organic thin films are formed on a single substrate, after the formation of one type of organic thin film is completed, the substrate after the completion of film formation is deposited with a different organic vapor deposition material 200 accommodated therein. It is necessary to transport the container 212.

When the substrate is transported, dust is generated in the vacuum chamber, and the amount of dust generated increases as the transport distance increases. The dust enters the organic thin film and causes contamination.
As described above, it is difficult to form an organic thin film having a good film quality with a conventional vapor deposition apparatus.
Japanese Patent Laid-Open No. 10-14334 JP 2006-307239 A JP 2007-70687 A

  The present invention has been made to solve the above-mentioned problems, and an object thereof is to form an organic thin film with good film quality.

In order to solve the above-described problems, the present invention includes a vapor generation source that generates vapor of a vapor deposition material therein, a discharge device that discharges vapor of the vapor deposition material into the film formation tank, and an interior of the vapor generation source. A vapor deposition apparatus having a switching device for switching between a state connected to the inside of the discharge device and a state in which the inside of the vapor generation source is blocked from the inside of the discharge device, the vacuum chamber, and the vacuum chamber And the switching device is configured to connect the interior of the steam generation source to the vacuum chamber while blocking the interior of the steam generation source from the interior of the discharge device. Vapor deposition apparatus.
The present invention is a vapor deposition device, wherein the steam generation source includes a plurality of steam generation devices, the interior of the steam generation source is the interior of each of the steam generation devices, and the switching device is the each of the steam generation devices. Is a vapor deposition apparatus configured to be individually connected to the discharge apparatus or the vacuum chamber.
The present invention is a vapor deposition device, wherein each of the vapor generation devices includes an evaporation chamber constituting an internal space of the vapor generation device, a tank in which the vapor deposition material is accommodated, and the vapor deposition material from the tank to the evaporation chamber. And a heating device for heating the vapor deposition material supplied to the evaporation chamber, and the vapor deposition material is supplied by the supply device in an amount set in the supply device. It is.
The present invention is a vapor deposition device, wherein the film formation tank is separated from the vacuum tank, a main vacuum exhaust system is connected to the film formation tank, and the discharge device releases one or more of the vapors The deposition apparatus includes a discharge port, and the internal space of the discharge device is connected to the inside of the film formation tank through the discharge port.
The present invention is a vapor deposition apparatus, wherein the film formation tank is the same as the vacuum tank, the discharge apparatus has one or more discharge ports for discharging the vapor, and an internal space of the discharge apparatus is The vapor deposition apparatus is connected to the inside of the vacuum chamber through the discharge port, and the switching device connects the internal space of the vapor generation source to the external space of the discharge device in the internal space of the vacuum chamber. It is.
This invention is a vapor deposition apparatus, Comprising: The vapor deposition apparatus which has a cooling means which can be carried in / out of the said vacuum chamber, and a cooling device which cools the said cooling means carried into the said vacuum chamber.
In the present invention, first to third vapor deposition materials are arranged in the first to third steam generators, and the first to third steam generators are arranged inside the first to third steam generators. The vapors of the vapor deposition materials of the respective colors are respectively generated, the vapors of the vapor deposition materials of the first to third colors are sequentially moved from the first to third vapor generation devices to the discharge device, and the discharge is performed. Vapor of said vapor deposition material of said 1st-3rd color in the 1st-3rd area | region of the board | substrate which is discharged | emitted from the discharge port of an apparatus inside the film-forming tank, and is arrange | positioned inside the said film-forming tank. And forming the colored layers of the first to third colors, and the steam moves between the first to third steam generation devices and the discharge device. A switching device is provided in the path, the first steam generator is connected to the discharge device, and the colored layer of the first color in the first region After forming, the switching device is switched, the first steam generator is disconnected from the discharge device, and connected to the vacuum exhaust system, the second steam generator is connected to the discharge device, In the film forming method, vapor of the vapor deposition material of the second color is discharged from the discharge port.
In the present invention, the first to third vapor generation devices each include a tank in which the vapor deposition material is disposed and an evaporation chamber for generating vapor of the vapor deposition material, and the vapor deposition material is accommodated in the tank. The vapor deposition material is supplied from the tank to the evaporation chamber, and vapor of the vapor deposition material is generated in the evaporation chamber, and the switching of the switching device is performed in a predetermined amount. In this film forming method, the first vapor deposition material is supplied to the first evaporation chamber and the organic material in the evaporation chamber is evaporated.
The present invention is a film forming method, wherein a vacuum chamber is provided between the vacuum exhaust system and the switching device, and the connection of the first steam generator to the vacuum exhaust system is performed by connecting the vacuum chamber. The vapor deposition system is connected to the evacuation system via the vacuum chamber and the vapor drawn into the vacuum chamber is cooled inside the vacuum chamber, and the vapor deposition material is deposited inside the vacuum chamber.
The present invention is a film forming method, wherein a main vacuum exhaust system connected to the film forming tank is used as the vacuum exhaust system, and the connection of the first steam generator to the vacuum exhaust system is the first exhaust system. One vapor generator is connected to the internal space of the film formation tank and to the external space of the discharge device, and the vapor drawn into the film formation tank is cooled and deposited inside the film formation tank. It is a membrane method.

  The present invention is configured as described above, and when the selected steam generator is connected to the discharge device, the steam generator is disconnected from other steam generators, exhaust tanks, and other vacuum exhaust systems. The Therefore, all the steam generated in the selected steam generator is supplied to the discharge device, and the steam generated in the other steam generators is not mixed with the steam supplied to the discharge device.

  A plurality of vapor generators are connected to one discharge device, and the discharge devices can be supplied with vapors of different types of organic materials. Therefore, a plurality of types of organic thin films can be formed without moving the substrate from the discharge device. Only a necessary amount of the vapor deposition material is supplied to the steam generator, and a large amount of the vapor deposition material is not heated at a time. Compared to conventional materials, the vapor deposition material is less likely to deteriorate and the amount of dust generated is small, so that an organic thin film with good film quality can be obtained. Since the steam generated by the selected steam generator is released from the discharge device without mixing with the steam generated by other steam generators, the organic thin film can be constituted only by the target material.

Reference numeral 1 in FIG. 1 indicates an example of a film forming apparatus (organic EL manufacturing apparatus).
The film forming apparatus 1 includes a plurality of vapor deposition apparatuses 10a to 10c and 30b. Here, the vapor deposition apparatuses 10a to 10c and 30b are connected to the transfer chamber 2, and the vapor deposition apparatuses 10a to 10c and 30b are connected thereto. A carry-in chamber 3 a, a carry-out chamber 3 b, a processing chamber 6, a sputtering chamber 7, and a mask storage chamber 8 are connected to the transfer chamber 2. A plurality of masks are accommodated in the mask accommodating chamber 8 and are periodically exchanged with masks disposed in the vapor deposition apparatuses 10a to 10c, 30b and the sputtering chamber 7.

  By the evacuation system 9, the inside of the transfer chamber 2, the inside of the vapor deposition apparatuses 10a to 10c, 30b, the inside of the processing chamber 6, the inside of the sputtering chamber 7, the inside of the mask storage chamber 8, the inside of the carry-in chamber 3a, and the carry-out chamber A vacuum atmosphere is formed inside 3b.

  A transfer robot 5 is disposed inside the transfer chamber 2. The substrate with the lower electrode formed on the surface is carried into the carry-in chamber 3a, and the substrate is carried into the transfer chamber 2 from the carry-in chamber 3a by the transfer robot 5 in the vacuum atmosphere. The organic thin films such as the electron injection layer, the electron transport layer, the light emitting layer, the hole transport layer, and the hole injection layer are formed inside the vapor deposition apparatuses 10a to 10c and 30b, and the upper electrode is formed inside the sputtering chamber 7. Then, the manufactured organic EL element is carried out from the carry-out chamber 3b.

The light emitting layer has a plurality of three colored layers (for example, red, green, and blue). The colored layers of the respective colors are formed on different regions, and the organic EL element can display full color.
A lower electrode is located in each region where the colored layer is formed. If the selected lower electrode is energized while the upper electrode is energized, the selected lower electrode and the colored layer located between the upper electrode emit light. A desired image or character can be displayed in full color by causing a colored layer of a desired color at a desired location to emit light.

Next, the vapor deposition apparatuses 10b and 30b of the present invention used for forming the light emitting layer will be described.
FIG. 2 is a schematic perspective view of the vapor deposition apparatus 10b of the first example of the present invention, and FIG. 4 is a schematic sectional view of the vapor deposition apparatus 30b of the second example of the present invention. The same members of the vapor deposition apparatuses 10b and 30b of the first and second examples will be described with the same reference numerals.

The vapor deposition apparatus 10b, 30b of the first and second examples includes a vapor generation source 12, a discharge apparatus 50, a switching apparatus 70, a film formation tank 11, a vacuum exhaust system 89, and first to third cooling means. 85a to 85c, respectively.
The discharge device 50 is provided with a discharge port 55, and is disposed so that at least a portion where the discharge port 55 is provided is located inside the film formation tank 11.

  In the vapor deposition apparatus 10b of the first example, a vacuum tank 82 different from the film formation tank 11 is provided, and first to third cooling means 85a to 85c are arranged inside the vacuum tank 82. As will be described later, The inside of the vacuum chamber 82 becomes an exhaust tank for residual gas.

  In the vapor deposition apparatus 30b of the second example, the first to third cooling means 85a to 85c are arranged in the space inside the film forming tank 11 and outside the emission apparatus 50, and the emission apparatus 50 is arranged. The same film formation tank 11 as the above is an exhaust tank for residual gas.

  The steam generation source 12 includes a plurality of steam generators 20a to 20c (first to third steam generators), and the vapor deposition materials 39 of the first to third colors are respectively separate steam generators 20a to 20a. 20c. The steam generators 20a to 20c that accommodate the first to third color vapor deposition materials 39 are referred to as first to third steam generators 20a to 20c, respectively.

FIG. 3 is a cross-sectional view for explaining the first to third steam generators 20a to 20c. The first to third steam generators 20a to 20c have the same configuration except that different vapor deposition materials 39 are accommodated, and the same members will be described with the same reference numerals.
Each of the steam generators 20a to 20c includes a tank (accommodating portion) 32, a supply device 31, an evaporation chamber 21, and a heating device 25. The tank 32 can accommodate the vapor deposition material 39 therein.

  The supply device 31 has an introduction pipe 42 having one end connected to the tank 32 and the other end connected to the evaporation chamber, a rotary shaft 35 inserted through the introduction pipe 42, and a control device 41 connected to the rotary shaft 35. is doing. A protrusion 36 is provided around the portion of the rotating shaft 35 inserted through the introduction pipe 42. When the rotation shaft 35 is rotated around the central axis by the control device 41, the vapor deposition material 39 accommodated in the tank 32 moves from the tank 32 to the evaporation chamber 21 through the groove between the protrusions 36, and evaporates. A vapor deposition material 39 is supplied to the chamber 21. If the relationship between the rotation amount of the rotation shaft 35 and the supply amount of the vapor deposition material 39 is obtained, the rotation amount of the rotation shaft 35 necessary for supplying the required amount of the vapor deposition material 39 can be found from the relationship.

 The control device 41 is provided with a storage device (not shown). As will be described later, when the required amount of the vapor deposition material 39 is stored in the storage device and set as a set amount, the control device 41 rotates the rotating shaft 35 so that the set amount of the vapor deposition material 39 is supplied.

  The heating device 25 has a high-temperature body 22 disposed inside the evaporation chamber 21 and a coil 24 wound around the evaporation chamber 21. The evaporation chamber 21 is made of a low permeability material such as copper or amorphous alloy, the high temperature body 22 is made of a high resistance conductive material such as stainless steel, and when an AC voltage is applied from the power source 26 to the coil 24, the inside of the evaporation chamber 21 is formed. An electromagnetic field is formed on the high temperature body 22 and the high temperature body 22 is inductively heated.

  A vacuum exhaust system 83 (vacuum pump) is connected to the evaporation chamber 21. When a vacuum atmosphere is formed inside the evaporation chamber 21, the high temperature body 22 is heated to a heating temperature that is equal to or higher than the evaporation temperature of the vapor deposition material 39 and less than the decomposition temperature, and the vapor deposition material 39 is supplied to the evaporation chamber 21, the heated high temperature body is heated. The vapor deposition material 39 contacts 22, and vapor of the vapor deposition material 39 is generated inside the evaporation chamber 21.

  The switching device 70 connects one or two or more evaporation chambers 21 internal spaces to the discharge device 50 among the evaporation chambers 21 of the first to third steam generation devices 20a to 20c, or all the evaporation chambers 21 The internal space is configured to be blocked from the discharge device 50.

  The evaporation chambers of the first to third steam generators 20 a to 20 c are connected to the exhaust tank via the switching device 70. As described above, in the vapor deposition apparatus 10b of the first example, the vacuum tank 82 different from the film formation tank 11 is an exhaust tank, and in the vapor deposition apparatus 30b of the second example, a part of the film formation tank 11 is an exhaust tank.

  The switching device 70 shuts off from the discharge device 50 while connecting one or more of the evaporation chambers 21 of the first to third steam generation devices 20a to 20c to the exhaust tank, or 1 or 2 The evaporating chamber 21 is connected to the discharge device 50 while being blocked from the exhaust tank, or all the evaporation chambers 21 are blocked from both the exhaust tank and the discharge device 50.

  The first to third steam generators 20a to 20c are connected to the switching device 70 via first to third supply pipes 76a to 76c, respectively, and the first to third supply pipes 76a to 76c include The steam in the steam generators 20a to 20c connected to the other supply pipes 76a to 76c does not pass.

Therefore, the steam generated in the first to third steam generators 20a to 20c is supplied to the discharge device 50 through the separate supply pipes 76a to 76c.
The exhaust tank is connected to the switching device 70 via first to third discharge pipes 78a to 78c. The ends (exhaust ports) of the first to third discharge pipes 78a to 78c on the side opposite to the switching device 70 are located inside the exhaust tank.

  In the vapor deposition apparatus 10b of the first example, the exhaust tank (vacuum tank 82) is separated by the film forming tank 11. The vapor deposition apparatus 30b of the second example includes an exhaust tank and a film formation tank 11, and the discharge port is located inside the exhaust tank and outside the discharge apparatus 50. Therefore, in both the first example and the second example, the vapor is discharged into the space outside the discharge device 50.

The first to third cooling means 85a to 85c described above are arranged to face the discharge ports of the first to third discharge pipes 78a to 78c, respectively.
A cooling device 86 is attached to each of the first to third cooling means 85a to 85c. The first to third cooling means 85a to 85c are cooled below the evaporation temperature of the vapor deposition material 39 by the cooling device 86, and the evaporation chambers 21 of the first to third steam generators 20a to 20c are connected to the exhaust tank. Then, vapor is deposited on the first to third cooling means 85a to 85c.

  The first to third cooling means 85a to 85c can be carried in and out of the exhaust tank. If the first to third cooling means 85a to 85c are taken out from the exhaust tank, the first to third cooling means 85a. The vapor deposition material 39 deposited on ˜85c can be recovered.

  The switching device 70 has valves 71a to 71c such as three-way valves. The first to third discharge pipes 78a to 78c are connected to the first to third supply pipes 76a to 76c through valves 71a to 71c, respectively, and flow to the first to third supply pipes 76a to 76c. The steam passes through the discharge pipes 78a to 78c connected to the supply pipes 76a to 76c, and does not pass through the discharge pipes 78a to 78c connected to the other supply pipes 76a to 76c.

  That is, the path | route until the vapor | steam generated in the evaporation chamber 21 is discharged | emitted by the exhaust tank differs for every 1st-3rd steam generators 20a-20c. Since the vapor deposition material 39 deposited on the first to third cooling means 85a to 85c is not mixed with the vapor deposition material 39 of other colors, the collected vapor deposition material 39 can be returned to the tank 32 and reused. .

Next, the process of forming the light emitting layer of this invention is demonstrated.
Here, the colored layer has three colors of red, green, and blue, and one of red, green, and blue is the first color, and one of the remaining two colors is the second color, The other color is the third color.

  As the vapor deposition material 39, first to third color vapor deposition materials 39 in which a colorant (dopant) is added to a main component organic material (host) are prepared. The first to third color vapor deposition materials 39 are accommodated in the tanks 32 of the first to third steam generators 20a to 20c, respectively, the lid 34 of the tank 32 is closed, and the space in which the vapor deposition material 39 is accommodated. Keep sealed.

The evaporation chamber 21, the tank 32, and the film formation tank 11 (and the vacuum tank 82) of the first to third steam generators 20a to 20c are evacuated, and the evaporation chamber 21, the tank 32, and the film formation tank 11 are evacuated. (And the vacuum chamber 82), the discharge device 50, each of the pipes 76a to 76c, 77, 78a to 78c, and the switching device 70 are formed with a vacuum atmosphere at a predetermined film forming pressure (for example, 10 ⁻⁵ Pa). .

  While maintaining the vacuum atmosphere, each high temperature body 22 is heated to a heating temperature (for example, 200 ° C. to 300 ° C.) that is equal to or higher than the evaporation temperature of the vapor deposition material 39 and lower than the decomposition temperature of the vapor deposition material 39. Keep it.

  The thickness of the colored layers of the first to third colors to be formed is determined. The required amounts of the first to third color vapor deposition materials 39 required for film formation with the determined film thickness are respectively determined, and the necessary amounts of the first to third color vapor deposition materials 39 are determined according to the first to third colors. It sets to the control apparatus 41 of the 3rd steam generators 20a-20c, respectively.

  While disconnecting the first steam generator 20a from the exhaust tank, the first steam generator 20a is connected to the discharge device 50, and the second and third steam generators 20b and 20c are disconnected from the discharge device 50. The color deposition material 39 is brought into contact with the heated high temperature body 22, and the vapor of the first color deposition material 39 is generated inside the evaporation chamber 21. The vapor of the vapor deposition material 39 of the first color moves from the evaporation chamber 21 of the first vapor generator 20a to the discharge device 50 due to the pressure difference.

A substrate holder 15 is disposed above the discharge device 50 inside the film formation tank 11.
Before the vapor deposition material 39 is brought into contact with the high temperature body 22 with the first vapor generating device 20a connected to the discharge device 50, the substrate 81 is carried into the film forming tank 11 and held by the substrate holder 15, and the alignment means. By 60, alignment is performed so that the region where the colored layer of the first color of the substrate 81 should be formed and the opening 17 of the mask 16 face each other.

  The vapor moved to the discharge device 50 and discharged from the discharge port 55 reaches the substrate 81 through the opening 17, and a colored layer of the first color grows in a predetermined region of the substrate 81. At this time, since the region where the colored layer of the other color is to be formed is covered with the shielding portion 18 of the mask 16, the colored layer of the first color is included in the region where the colored layer of the other color is to be formed. Will not grow.

As described above, the amount of the vapor deposition material 39 disposed in the evaporation chamber 21 is an amount necessary for film formation with a predetermined film thickness.
The first vapor generator 20a is disconnected from the exhaust tank and connected to the discharge device 50 while evacuating the film formation tank 11 until all the vapor deposition material 39 is evaporated, and other vapor generators 20b, The state where 20c is cut off from the discharge device 50 and the state where the aligned substrate 81 and mask 16 are positioned on the discharge device 50 are maintained.

  When a predetermined time elapses after the first steam generator 20a is connected to the discharge device 50 or the internal pressure of the evaporation chamber 21 of the first steam generator 20a becomes equal to or lower than a predetermined pressure, the vapor deposition material 39 is It is determined that all the film has evaporated and the film formation has been completed.

When the film formation is completed, a colored layer of the first color having the determined film thickness is formed in the determined area on the surface of the substrate 81.
When film formation of the first color layer is completed, the first steam generator 20a is disconnected from the discharge device 50 and connected to the exhaust tank to perform exhaust processing described later, and the second color layer is formed. Form a film.

  After the formation of the second color layer, the second steam generator 20b is disconnected from the discharge device 50 and connected to the exhaust tank for exhaust treatment to form the third color layer. Film. After the third color layer is formed, the third steam generator 20c is disconnected from the discharge device 50 and connected to the exhaust tank to perform exhaust processing.

  The second and third color layers are formed in the same manner as when the first color layer is formed. The opening 17 is a region where the second and third color layers are to be formed. After aligning the substrate 81 and the mask 16 so as to face each other, the second and third steam generators 20b and 20c are connected to the discharge device 50, and the second and third amounts obtained in advance. The vapor deposition material 39 of the third color is evaporated in the evaporation chamber 21.

If the vapor is discharged from the discharge port 55 while the aligned substrate 81 and the mask 16 are positioned on the discharge device 50, the second and third films having the predetermined film thickness are determined in a predetermined region. A colored layer is formed to obtain a light emitting layer.
While the light emitting layer is formed, the substrate 81 moves relative to the mask 16, but since it is not necessary to remove it from the emission device 50, the moving distance of the substrate 81 is short and dust generation is small.

  The substrate 81 on which the light emitting layer is formed is detached from the substrate holder 15 and carried out of the film formation tank 11, and the unprocessed substrate 81 before the light emission layer is formed is carried into the film formation tank 11 to obtain a substrate holder. 15 and forming the colored layers of the first to third colors in the above-described steps.

  In the inside of each evaporation chamber 21 and the path between each evaporation chamber 21 and the discharge device 50, the vapor used for the film formation of the previous substrate 81 and its decomposition products remain. Of the path, the portion between the switching device 70 and the evaporation chamber 21 (supply pipes 76a to 76c) is longer than the portion between the switching device 70 and the film formation tank 11, and the supply piping 76a to 76c and the evaporation chamber 21 are evaporated. Since the chamber 21 is far from the film formation tank 11, the vapor and its decomposition products that were previously formed tend to remain.

  If vapor or decomposition products remain, there is a possibility of adversely affecting the next film formation. Therefore, before the vapor deposition material 39 is supplied to the evaporation chamber 21 and film formation of the colored layer is started, the first to third vapors are produced. The exhaust processing of the generators 20a to 20c is terminated.

  In the exhaust treatment, first to third cooling means 85a to 85c are carried into an exhaust tank in advance, and the first to third cooling means 85a to 85c are cooled to a cooling temperature lower than the evaporation temperature of the vapor deposition material 39, Maintain the cooling temperature.

  While evacuating the exhaust tank, the first to third steam generators 20a to 20c are connected to the exhaust tank, and the internal space of the first to third steam generators 20a to 20c (the internal space of the evaporation chamber 21). And the path between the internal space and the switching device 70 (supply pipes 76a to 76c) are evacuated, and the remaining steam is discharged to the exhaust tank to the first to third cooling means 85a to 85c. Precipitate.

Here, a gas supply system 84 is connected to the evaporation chamber 21. If a purge gas such as N ₂ gas is allowed to flow from the gas supply system 84 to the evaporation chamber 21 while the first to third steam generators 20a to 20c are connected to the exhaust tank, the residual steam is pushed away by the purge gas. Increases steam discharge efficiency.

  When a predetermined time elapses after the first to third steam generators 20a to 20c are connected to the exhaust tank, or when the evaporation chamber 21 reaches a predetermined pressure, it is determined that the residual steam disappears and the exhaust process is finished. To do.

  The first to third steam generators 20a to 20c remain connected to the exhaust tank while being shut off from the discharge device 50 until the vapor deposition material 39 is supplied to the evaporation chamber 21 after the exhaust process is completed. Alternatively, it may be cut off from both the exhaust tank and the discharge device 50.

  Before supplying the vapor deposition material 39 to the evaporation chamber 21, the vacuum exhaust system 83 connected to the evaporation chamber 21 is operated to form the above-described film forming pressure in the evaporation chamber 21. When the purge gas is used for the exhaust process, the purge gas is removed from the evaporation chamber 21 and the first to third supply pipes 76a to 76c when forming the film forming pressure.

  When the vapor deposition material 39 is supplied to the evaporation chamber 21, residual vapor, residual vapor decomposition products, purge gas, and the like are removed from the evaporation chamber 21, and the path between the evaporation chamber 21 and the switching device 70. A colored layer having a predetermined film thickness is formed without any contamination.

  If the film formation of the colored layers of the first to third colors, the exhaust processing of the first to third steam generators 20a to 20c, and the replacement of the substrate 81 are repeated, the evaporation chamber 21 and the piping (particularly the supply piping) 76a to 76c), it is possible to continuously perform the film forming process on a large number of substrates 81 without maintenance.

  The vapor deposition material 39 deposited on the first to third cooling means 85a to 85c may be reused or discarded as it is. When the deposited vapor deposition material 39 is discarded without being reused, the vapor passing through the first to third supply pipes 76a to 76c may be discharged to the exhaust tank through the same discharge pipe.

  The heating means for heating the high temperature body 22 is not limited to induction heating means. It is also possible to attach a heater to the high temperature body 22, energize the heater, and heat the high temperature body 22 by heat conduction. Further, the evaporation chamber 21 may be provided with a window through which laser light can pass, and the vapor deposition material 39 may be evaporated by irradiating the vapor deposition material 39 disposed on the high temperature body 22 or the high temperature body 22 with the laser light.

  The shape of the high-temperature body 22 is not particularly limited, but here, the high-temperature body 22 includes a plate-shaped heating plate 22c, a ring-shaped outer peripheral protrusion 22b disposed on the surface of the heating plate 22c, and an outer peripheral protrusion on the surface of the heating plate 22c. And an inner protrusion 22a disposed inside the ring of the portion 22b. The vapor deposition material 39 dropped from the supply device 31 is disposed between the inner protrusion 22a and the outer protrusion 22b.

The supply device 31 used in the present invention is not particularly limited as long as it can supply a predetermined amount of the vapor deposition material 39 to the evaporation chamber 21 accurately.
The vapor deposition material 39 is not limited to a mixture of a host and a dopant. For example, two or more tanks 32 are provided in each of the first to third steam generators 20a to 20c, and the components of the vapor deposition material 39 (for example, host, colorant, other dopant) are provided in the tanks 32, respectively. 32.

  An amount necessary for forming a colored layer having a predetermined composition and a predetermined film thickness is determined for each component, and the determined amount of each component is transferred from the tank 32 to the same evaporation chamber 21 or different evaporation chambers 21. Supply and heat in the evaporation chamber 21 to generate steam.

  If each evaporation chamber 21 is connected to the same discharge device 50 and the vapor of each component is discharged from the discharge port 55 of the same discharge device 50, the surface of the substrate 81 has a predetermined composition and a predetermined film thickness. A colored layer is formed.

The first to third colors are not limited to red, green, and blue, and may be red, yellow, and blue as long as they are three primary colors. Further, the number of colors in the colored layer is not limited to three colors, and may be two colors or less, or four or more colors. The steam generators 20a to 20c are prepared at least as many as the number of colors of the colored layer. In short, the vapor deposition apparatus of the present invention can form colored layers of different colors in different regions.
The colored layer is not limited to the case of constituting a light emitting layer containing a light emitting material, and may be formed separately from the light emitting layer.

The vapor deposition apparatus 10b of the present invention can be used not only for the light emitting layer but also for the formation of other organic thin films such as a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer.
When an organic thin film other than the light emitting layer such as a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer is formed, it is not necessary to change the film formation region on the substrate surface. It is not necessary to arrange the mask 16 between 50, or even when the mask 16 is arranged, it is not necessary to move the mask 16 for each film formation.

  One or a plurality of discharge devices 50 can be arranged inside one film formation tank 11. When a plurality of release devices 50 are arranged inside one film formation tank 11, the discharge apparatuses 50 are sufficiently separated from each other so that the vapors emitted from the respective release apparatuses 50 are not mixed, or inside the film formation tank 11. It is desirable to provide a shielding plate that shields the flow of steam.

  Either one or both of the discharge device 50 and the substrate holder 15 may be connected to the swinging means 58. When the substrate 81 and the mask 16 are relatively stationary while the vapor is released, the substrate 81 is reciprocated or moved in a horizontal plane with respect to the discharge device 50 in the horizontal plane. The thickness of the growing organic thin film becomes uniform.

The direction of relative reciprocation between the substrate holder 15 and the discharge device 50 is not particularly limited.
For example, the discharge device 50 includes a discharge container 51 provided with a discharge port 55 and a supply pipe 52 disposed inside the discharge container 51, and the supply pipes 52 are arranged substantially in parallel at a predetermined interval. When the plurality of branched pipes are provided, the substrate 81 and the discharge device 50 are relatively moved in a horizontal plane in a direction intersecting the branch pipe.

  If the outlet 53 of the supply pipe 52 is provided at a position that does not face the outlet 55 of the discharge container 51, the steam discharged from the outlet 53 is discharged from the outlet 55 after filling the discharge container 51. Therefore, the release rate is stabilized. Specifically, when the discharge port 55 is provided on the ceiling of the discharge container 51, the jet port 53 is provided in a portion of the supply pipe 52 that faces the bottom surface or side surface of the discharge container 51.

If the surface (front surface) on which the discharge ports 55 of the discharge device 50 (here, the discharge container 51) are formed is larger than the substrate 81, and the discharge ports 55 are arranged in a distributed manner at a predetermined interval on the front surface, A thin film can be formed over the entire surface of the substrate 81 while the substrate 81 is positioned on the discharge device 50. According to this method, it is not necessary to form a film while transporting the substrate 81, and the moving distance of the substrate 81 in the film forming tank 11 is shortened, so that the amount of dust generated by transporting the substrate 81 is small.
When the vapor is supplied by connecting the evaporation chamber 21 to the discharge device 50, if a purge gas (for example, N ₂ ) is introduced into the evaporation chamber 21, the supply efficiency of the vapor is increased.

  The supply amount of the organic material 39 required to form the determined film thickness is obtained in a preliminary test. In the preliminary test, the same organic material 39 as that used for actual film formation is accommodated in the tank 32, and the film formation conditions such as the pressure in the vacuum atmosphere and the heating temperature of the high-temperature body 22 are set according to the actual manufacturing conditions and film formation conditions. The organic material 39 is supplied to the evaporation chamber 21 with the substrate 81 (the mask 16 and the substrate 81 if the mask 16 is used) placed on the discharge device 50 to generate vapor, and the vapor is released. A thin film is formed by discharging from the outlet 55. If the relationship between the falling amount of the organic material 39 and the film thickness of the thin film is obtained, the necessary supply amount can be determined from the relationship.

The installation locations of the steam generators 20a to 20c are not particularly limited, and some or all of the steam generators 20a to 20c may be installed in the same film formation tank 11 as the discharge device 50.
When the vapor is supplied by connecting the evaporation chamber 21 to the discharge device 50, at least the path through which the vapor passes (supply pipes 76 a to 76 c, the switching device 70, the discharge pipe 77, and the discharge device 50) is a heater, and the vapor deposition material 39. If the heating temperature is higher than the evaporation temperature and lower than the decomposition temperature, no vapor is deposited in the path.

  When the mask 16 is heated by the radiant heat from the discharge device 50, thermal expansion occurs and the film forming accuracy is lowered. Therefore, a heat insulating material (cooling plate) 67 is disposed between the discharge device 50 and the mask 16, and a heater 68 is provided. Is preferably covered with a cooling plate 67.

  An opening (vapor discharge port) through which the discharge port 55 is exposed is provided at a position on the discharge port 55 of the cooling plate 67, and the size of the opening is large enough that the vapor discharged from the discharge port 55 does not come into contact. Then, the vapor does not deposit on the cooling plate 67.

  When the evaporation chamber 21 is connected to the exhaust tank and the steam is discharged, at least the path through which the steam is discharged (supply pipes 76a to 76c, the switching device 70, and the discharge pipes 78a to 78c) is connected to the evaporation temperature of the deposition material 39. When heated to a temperature lower than the decomposition temperature, steam is not generated in the path. In addition to the path, if the exhaust tank is also heated above the evaporation temperature and below the decomposition temperature, the vapor deposition material 39 does not deposit on the wall surface of the exhaust tank, but deposits on the first to third cooling means 85a to 85c. The collection efficiency of the vapor deposition material 39 is increased.

  The shape of the 1st-3rd cooling means 85a-85c is not specifically limited, A plate shape may be sufficient and a container shape may be sufficient. The first to third cooling means 85a to 85c may be integrated or separated.

Plan view for explaining an example of a film forming apparatus Schematic perspective view of the vapor deposition apparatus of the first example of the present invention Sectional drawing for demonstrating the 1st-3rd steam generator of this invention Schematic sectional view of the vapor deposition apparatus of the second example of the present invention Sectional drawing for demonstrating the vapor deposition apparatus of a prior art

Explanation of symbols

  9, 89 ... Vacuum exhaust system 10b ... Evaporation apparatus 11 ... Deposition tank 12 ... Steam generation source 20a-20c ... First-third steam generation apparatus 21 ... Evaporation chamber 25 ... Heating apparatus 31 ... Supplying device 42 ... Introducing pipe 32 ... Tank 39 ... Vapor deposition material 50 ... Discharging device 70 ... Switching device 81 ... Substrate 82 ... Vacuum tank 85a-85c ... First to third cooling means 86 …… Cooling device

Claims (10)

A vapor source that generates vapor of the vapor deposition material inside,
A discharge device for discharging the vapor of the vapor deposition material into the film formation tank;
A vapor deposition apparatus having a switching device for switching between a state in which the interior of the vapor generation source is connected to the interior of the discharge apparatus and a state in which the interior of the vapor generation source is blocked from the interior of the discharge apparatus,
A vacuum chamber and an evacuation system connected to the vacuum chamber;
The switching device is a vapor deposition device configured to connect the interior of the vapor generation source to the vacuum chamber while blocking the interior of the vapor generation source from the interior of the discharge device. The steam generating source has a plurality of steam generating devices,
The inside of the steam generation source is the inside of each of the steam generation devices,
The vapor deposition apparatus according to claim 1, wherein the switching device is configured to be able to individually connect the inside of each of the vapor generation devices to the discharge device or the vacuum chamber. Each of the steam generators includes an evaporation chamber that constitutes an internal space of the steam generator;
A tank containing the vapor deposition material;
A supply device for supplying the vapor deposition material from the tank to the evaporation chamber;
A heating device for heating the vapor deposition material supplied to the evaporation chamber,
The vapor deposition apparatus according to claim 2, wherein the vapor deposition material is supplied by the supply apparatus in an amount set in the supply apparatus. The film formation tank is separated from the vacuum tank;
A main vacuum exhaust system is connected to the film formation tank,
The discharge device has one or more discharge ports for discharging the vapor,
The vapor deposition apparatus according to any one of claims 1 to 3, wherein an internal space of the discharge device is connected to the inside of the film forming tank through the discharge port. The film formation tank is the same as the vacuum tank,
The discharge device has one or more discharge ports for discharging the vapor,
The internal space of the discharge device is connected to the inside of the vacuum chamber through the discharge port,
The vapor deposition apparatus according to any one of claims 1 to 3, wherein the switching device connects an internal space of the vapor generation source to an external space of the discharge device in an internal space of the vacuum chamber.   The vapor deposition apparatus according to any one of claims 1 to 5, further comprising: a cooling unit that can be carried into and out of the vacuum chamber; and a cooling device that cools the cooling unit carried into the vacuum chamber. Arrange the first to third vapor deposition materials in the first to third steam generators,
Generate vapors of the first to third color deposition materials inside the first to third steam generation devices,
The vapors of the vapor deposition materials of the first to third colors are sequentially moved from the first to third vapor generation devices to the discharge device, and discharged from the discharge port of the discharge device into the film formation tank. Let
The vapors of the first to third colors of the vapor deposition materials reach the first to third regions of the substrate disposed inside the film formation tank, respectively, and the first to third colors A film forming method for forming a colored layer,
A switching device is provided in a path along which the steam moves between the first to third steam generation devices and the discharge device,
After connecting the first steam generator to the discharge device and forming the colored layer of the first color in the first region,
In the state where the switching device is switched, the first steam generator is disconnected from the discharge device, and connected to the vacuum exhaust system,
A film forming method in which the second vapor generation device is connected to the discharge device, and vapor of the vapor deposition material of the second color is discharged from the discharge port. In the first to third vapor generating devices, a tank in which the vapor deposition material is disposed, and an evaporation chamber for generating vapor of the vapor deposition material are provided, respectively.
The film deposition method according to claim 7, wherein the vapor deposition material is stored in the tank, the vapor deposition material is supplied from the tank to the evaporation chamber, and vapor of the vapor deposition material is generated in the evaporation chamber.
The film forming method according to claim 7, wherein the switching device is switched after a predetermined amount of the first vapor deposition material is supplied to the first evaporation chamber and the organic material in the evaporation chamber is evaporated. A vacuum chamber is provided between the vacuum exhaust system and the switching device,
The connection of the first steam generator to the evacuation system is connected to the evacuation system via the vacuum chamber, the steam drawn into the vacuum chamber is cooled inside the vacuum chamber, The film forming method according to claim 7, wherein the vapor deposition material is deposited inside a vacuum chamber. As the vacuum exhaust system, using a main vacuum exhaust system connected to the film formation tank,
The connection of the first steam generator to the evacuation system is to connect the first steam generator to the space inside the film formation tank and to the external space of the discharge device,
The film forming method according to claim 7, wherein the vapor drawn into the film forming tank is cooled and deposited inside the film forming tank.

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