JP2008300603A - Semiconductor production apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor production apparatus in which doping work can be completed in a short time by controlling the amount of diffusion correctly when doping into a GaN base semiconductor is performed by diffusing impurities in a solution. <P>SOLUTION: The semiconductor production apparatus is provided with a slider 3 as a wafer carrying section, three solution tanks 11, 12, 13, and heaters 6, 7, 8 provided above and below each solution tank. The slider 3 is formed so that a GaN base semiconductor wafer 4 can be mounted thereon. The heaters 6, 7, 8 can be controlled independently. The solution tank 11 is used for heating the GaN base semiconductor wafer 4, the solution tank 12 is used for impurity diffusion, and the solution tank 13 is used for cooling the GaN base semiconductor wafer 4. The solution tank 12 and the solution tanks 11, 13 are arranged to have different temperatures. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor manufacturing apparatus that uses a solution in which impurities are dissolved and diffuses impurities in the solution to dope impurities into a GaN-based semiconductor layer.

  III-V group compound semiconductor epitaxial wafers such as GaP, GaAs, InP and the like are usually produced by a liquid phase epitaxial growth method (LPE method). Generally, a slide boat method is used in the liquid phase epitaxial growth method. As shown in Non-Patent Document 1, the slide boat used in this slide boat method is made of graphite, and has a solution holder having two or more solution reservoirs in which the growth solution is placed in the sliding direction, and a part of the surface. And a slider formed with a substrate placement portion for placing a substrate or the like. The solution holder and the slider can be moved in the horizontal direction.

  For example, in the case of producing a GaAs thin film, a slide boat is placed in a furnace and heated to saturate the Ga melt contained in the solution reservoir with GaAs to produce a growth solution, and then cooled to remove the growth solution. Make it supercooled. Thereafter, the slider is moved so that the solution reservoir containing the growth solution is directly above the GaAs substrate while gradually cooling, and the growth solution is brought into contact with the GaAs substrate. As a result, a GaAs epitaxial layer grows on the GaAs substrate. After the thin film having a predetermined thickness is grown, the solution reservoir containing the growth solution is moved from the GaAs substrate by moving the slider to stop the growth.

When growing a plurality of epitaxial layers, the growth solution is placed in the growth solution reservoir, and the epitaxial layers are stacked by repeating contact with the GaAs substrate, temperature drop, and separation. As described above, the liquid phase epitaxial method is a technique for crystal growth by lowering the solution temperature to bring the solute element dissolved in the solution into a supersaturated state and depositing it on the substrate.
Baifukan Isao Akasaki, “III-IV compound semiconductors”, pages 28-29, published May 20, 1994

  However, in the above liquid phase epitaxial method, an AlInGaN quaternary mixed crystal system cannot be produced, and the MOCVD method (metal organic vapor phase epitaxy) is generally used. Further, the doping of p-type and n-type impurities is also performed by vapor phase growth with a gas as a raw material flowing into the growth chamber. By the way, regarding the doping of AlInGaN quaternary mixed crystal impurities, a method of thermally diffusing a GaN-based semiconductor by immersing it in a solution containing impurities has been proposed instead of using a vapor phase growth method such as MOCVD. .

  For example, when p-type impurities are doped in a GaN-based semiconductor, a GaN-based semiconductor wafer epitaxially grown by MOCVD or the like is placed in one solution tank containing a Ga (gallium) melt, and this Ga-fused semiconductor. After p-type impurities are dissolved in the liquid and the Ga melt temperature is raised to about 900 ° C., the p-type impurities in the Ga melt are diffused into the crystals of the GaN-based semiconductor wafer. In addition, n-type impurities are diffused with the same structure as described above, only by changing the raw material of the n-type impurities.

  FIG. 11 shows the temperature change of the solution tank in which the solution is stored when the impurities in the solution are diffused into the wafer as described above. First, a wafer to be doped with impurities is placed at the bottom of the solution tank, and after adding Ga melt as a solvent and raw materials for impurities as a solute, the solution tank is heated as shown in period A for a predetermined time. Over about 900 ° C., and the temperature is maintained for a certain period (period B in the figure). Thereafter, the temperature of the solution tank is gradually lowered as in period C, and when the temperature drops to a predetermined temperature, the wafer is taken out from the solution tank.

  In FIG. 11, the period B is originally a period during which impurities are diffused into the wafer. However, the solution in which the impurities are dissolved is also in contact with the wafer during the period A (heating period) and the period C (cooling period). Thus, impurity diffusion occurs during these periods. The solution is almost composed of a Ga melt, and since the heat capacity of Ga is large, it is difficult to heat and cool. Therefore, the heating period A and the cooling period C from 900 ° C. to the optimum temperature of 900 ° C. for causing the diffusion reaction become long.

  In order to accurately control the diffusion amount, it is necessary that the solution in the solution tank and the GaN-based semiconductor wafer are in contact with each other only during the period B. In addition, as described above, since the period A and the period C are long, impurity diffusion into the GaN-based semiconductor wafer proceeds considerably during this period, and it is difficult to accurately control the diffusion amount. there were. Further, since the period A and the period C are long, it takes too much time to complete the doping operation on the GaN-based semiconductor wafer, resulting in a decrease in yield.

  The present invention was devised to solve the above-described problems, and allows doping to be accurately controlled when doping a GaN-based semiconductor by diffusing impurities in a solution. An object of the present invention is to provide a semiconductor manufacturing apparatus capable of completing the work in a short time.

  In order to achieve the above object, the invention described in claim 1 is a semiconductor manufacturing apparatus for doping impurities into a GaN-based semiconductor, comprising a first solution tank containing a gallium solution, a gallium solution and the impurities. At least a second solution tank containing a mixed solution and having a temperature different from that of the first solution tank, and immersing the GaN-based semiconductor in each solution contained in the first solution tank and the second solution tank. A semiconductor manufacturing apparatus, wherein the GaN-based semiconductor is doped with impurities.

  According to a second aspect of the present invention, there is provided a carbon wafer on which the GaN-based semiconductor is placed in order to immerse the GaN-based semiconductor in each solution contained in the first solution tank and the second solution tank. 2. The semiconductor manufacturing apparatus according to claim 1, further comprising a transfer unit, wherein an insertion port for inserting the wafer transfer unit is formed in the first solution tank and the second solution tank.

  The invention described in claim 3 is characterized in that a liquid sealant having a specific gravity smaller than that of gallium is formed on the upper part of each solution contained in the first solution tank and the second solution tank. It is a semiconductor manufacturing apparatus of any one of Claims 1-2.

  According to a fourth aspect of the present invention, the first solution tank is a single solution tank that performs both heating and cooling of the GaN-based semiconductor. 2. A semiconductor manufacturing apparatus according to claim 1.

  The invention according to claim 5 is characterized in that a plurality of the first solution tanks are provided and divided into a heating solution tank and a cooling solution tank for the GaN-based semiconductor. It is a semiconductor manufacturing apparatus of any one of Claims 1-3.

  The semiconductor manufacturing apparatus of the present invention has at least a first solution tank containing a gallium solution and a second solution tank containing a mixed solution of a gallium solution and impurities and having a temperature different from that of the first solution tank. Since doping is performed by immersing a GaN-based semiconductor in each solution contained in the first solution tank and the second solution tank and diffusing impurities in the solution into the GaN-based semiconductor, impurity diffusion is performed. The solution tank for heating and the solution tank for heating or cooling can be separated, and the impurity diffusion amount can be accurately controlled as compared with the conventional one, and heating or cooling can be performed quickly.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a basic configuration of a first semiconductor manufacturing apparatus of the present invention.

The wafer used in the semiconductor manufacturing apparatus of the present invention uses a III-V group GaN-based semiconductor which is a hexagonal compound semiconductor, and the III-V group GaN-based semiconductor is a quaternary mixed crystal Al _x Ga. represented by _{y in z N (x + y} + z = 1,0 ≦ x ≦ 1,0 <y ≦ 1,0 ≦ z ≦ 1).

  The semiconductor manufacturing apparatus of FIG. 1 is provided with a slider 3, which is a wafer transfer unit, three solution tanks 11, 12, 13 and heaters 6, 7, 8 provided above and below each solution tank. The slider 3 is formed with a wafer holding portion on which a part of the surface is dug to place the GaN-based semiconductor wafer 4. The heaters 6, 7, and 8 can be controlled independently, and each solution tank 11, 12, and 13 can be heated by individually changing the heat output of each heater.

  Moreover, the three solution tanks 11, 12, and 13 are basically formed in the same structure, and each solution tank is configured as shown in FIG. As shown in FIG. 5, the solution tank 1 corresponding to each of the solution tanks 11, 12, and 13 has a container 1 a having a volume for containing the solution therein, and the container 1 a has a slider 3. An insertion slot 1b for insertion is formed.

  As described above, the GaN-based semiconductor wafer 4 can be placed and held on the slider 3, and the slider 3 and the liquid tank 1 are relatively positioned with the slider 3 inserted into the insertion port 1b. It can be moved. In a state where the slider 3 is inserted into the insertion port 1b, the gap between the surface of the slider 3 and the wall surface of the insertion port 1b is formed to be less than 1 mm (for example, 0.2 mm to 0.3 mm). Thus, even if the slider 3 is moved back and forth, the Ga solution 2 inside does not leak out. The container 1a is made of carbon or alumina, and the slider 3 is made of carbon. If it is made of carbon, the heat resistance becomes high, and if both the container 1a and the slider 3 are made of carbon, the mutual friction coefficient becomes small.

  Further, although not shown in FIG. 5, as can be seen from the configuration diagram of FIG. 1, a pair of insertion ports of the solution tank 1 are provided, and the insertion port 1 b is arranged so as to face the insertion port 1 b. Another insertion port is provided on the opposite side, and the slider 3 is inserted through a pair of insertion ports as in the relationship between the solution tanks 11, 12, 13 and the slider 3 in FIG. Further, the Ga solution 2 containing Ga (gallium) is injected into the container 1a to a position where the GaN-based semiconductor wafer 4 of the slider 3 is sufficiently immersed.

  A method of doping impurities into a GaN-based semiconductor using the semiconductor manufacturing apparatus configured as described above will be described with reference to FIGS. First, the slider 3 is inserted into each insertion port of the solution tanks 11, 12, and 13, and setting is performed as shown in FIG. Next, Ga melt is poured into each of the solution tanks 11, 12, and 13 so that the slider 3 is completely immersed and reaches the upper position of each of the solution tanks. Thereafter, the doping material is charged only into the solution tank 12. For example, when it is desired to dope a p-type impurity, a material such as Mg (magnesium) or Zn (zinc) or a melt thereof is mixed and dissolved. When it is desired to dope an n-type impurity, a material such as Si (silicon) or a melt thereof is mixed and dissolved. Thus, a metal element is usually used as the impurity material.

  Therefore, in this state, the solution 22 in the solution tank 11 and the solution 22 in the solution tank 13 are each composed of only Ga melt, while the solution 21 in the solution tank 12 is composed of Ga melt and impurity melt. Consists of a liquid mixture. As will be described later, the solution tank 11 (corresponding to the first solution tank) serves to raise the temperature of the GaN-based semiconductor wafer 4, and the solution tank 12 (corresponding to the second solution tank) diffuses impurities into the GaN-based semiconductor wafer 4. The solution tank 13 (corresponding to the first solution tank) serves to lower the temperature of the GaN-based semiconductor wafer 4.

Further, a liquid sealant 5 such as B ₂ O ₃ is introduced so that the upper side of the solutions 22 and 21 in each liquid tank is covered with the liquid sealant 5 as shown in FIG. For example, B ₂ O _{3 has} a melting point of 460 ° C. and a specific gravity of 2.46, and the liquid sealant 5 needs a substance that has a specific gravity smaller than that of Ga melt and does not evaporate even when heated to about 900 ° C. It is.

  If a metal having a higher vapor pressure than Ga, that is, a metal that is easier to evaporate and sublimate than Ga, is dissolved in the solution as a doping material, when the temperature is raised, a part of the doping metal material is vaporized outside the solution tank. As a result, the concentration of the doping metal material in the solution changes, and accurate doping cannot be performed. In addition, the manufacturing apparatus may be contaminated with the doping metal material that has become vapor. In order to prevent these problems, the liquid sealing agent 5 is used. Examples of the metal having a higher vapor pressure than Ga used for the doping material include Zn. In addition, although it is not a metal as a material whose vapor pressure is higher than Ga with an n-type impurity, there exist S (sulfur) and Se (selenium).

  Next, a necessary number of GaN-based semiconductor wafers 4 are attached to the wafer holding portion provided on the slider 3. Thereafter, the outputs of the heaters 6, 7, and 8 are controlled separately so that the temperatures of the solution tanks 11, 12, and 13 reach different temperatures. For example, as shown in FIG. 2, the solution tank 11 is heated to 200 ° C., the solution tank 12 is heated to 400 ° C., and the solution tank 13 is heated to 200 ° C. using the heaters 6, 7, and 8.

  Then, the slider 3 is moved in the direction of the arrow, and the GaN-based semiconductor wafer 4 is immersed in the solution tank 11 as shown in FIG. Since the solution 22 in the solution tank 11 is only Ga melt, no reaction occurs between the GaN-based semiconductor wafer 4 moved into the solution tank 11 and the solution 22, and the GaN-based semiconductor wafer 4 is kept at a predetermined temperature. Will be heated up to.

  Immediately after the GaN-based semiconductor wafer 4 is moved to the solution tank 11, the outputs of the heaters 6, 7, and 8 are controlled, and the temperature of the solution tank 11 is set to 600 ° C. as shown in FIG. The temperature is raised to 900 ° C., and the temperature of the solution bath 13 is raised to 600 ° C. Then, with the GaN-based semiconductor wafer 4 reaching about 600 ° C., as shown in FIG. 3, the slider 3 is moved in the direction of the arrow, and the GaN-based semiconductor wafer 4 is moved to the next solution bath 12. The solution 21 in the solution tank 12 is a solution in which Ga melt and a doping metal are mixed. Since the solution tank 12 is a solution tank for impurity diffusion, a temperature condition of 900 ° C. is applied to the GaN-based semiconductor wafer 4. Impurity diffusion is performed. Here, since the GaN-based semiconductor wafer 4 has a much smaller heat capacity and volume than the Ga melt, it immediately rises to a temperature of 900 ° C. and can diffuse impurities at 900 ° C. The same is true for cooling, and the solution temperature in the solution tank is reached immediately.

  Thus, before the GaN-based semiconductor wafer 4 is moved, the first solution tank 11 is warmed to about 200 ° C., and after the GaN-based semiconductor wafer 4 is moved into the solution tank 11, the temperature is increased to about 600 ° C. The reason why the temperature is changed stepwise by heating and then moving to the solution bath 12 heated to 900 ° C. is to prevent the GaN-based semiconductor wafer 4 from cracking. For example, after the first solution tank 11 is heated to 600 ° C., when the GaN-based semiconductor wafer 4 placed in a room temperature state is moved into the solution tank 11, the temperature changes drastically. Cracks occur in the semiconductor wafer 4.

  After the solution bath 12 is maintained at 900 ° C. for a predetermined time and the impurity diffusion into the GaN-based semiconductor wafer 4 is completed, the heaters 6, 7, and 8 are turned off, and as shown in FIG. Is cooled to 300 ° C., the temperature of the solution bath 12 is cooled to 600 ° C., and the temperature of the solution bath 13 is cooled to 300 ° C. Thereafter, as shown in FIG. 4, the slider 3 is moved in the direction of the arrow, and the GaN-based semiconductor wafer 4 is moved to the next solution tank 13. Since the solution bath 13 is a cooling bath containing only Ga melt, the reaction between the GaN-based semiconductor wafer 4 and the solution 22 does not occur, and the GaN-based semiconductor wafer 4 is immediately cooled to 300 ° C. . From here, it can also cool to the temperature of 300 degrees C or less.

  As described above, after cooling to 600 ° C. with the GaN-based semiconductor wafer 4 in the solution tank 12, the solution is moved to the solution tank 13 whose temperature is lowered to 300 ° C. and cooled, so that one solution tank The cooling time is faster than immersing the GaN-based semiconductor wafer 4 therein and cooling it from 900 ° C. to 300 ° C. Further, since the temperature difference between the solution tank 12 and the solution tank 13 is set to 300 ° C. so as not to give a sudden temperature change to the GaN-based semiconductor wafer 4, cracking of the GaN-based semiconductor wafer 4 can be prevented. .

  Since the solution tank 13 is a solution tank for cooling the GaN-based semiconductor wafer 4, as shown in FIGS. 1 to 4, the temperature is changed from 200 ° C., 600 ° C., and 300 ° C. each time without changing from the beginning. You may make it fix to 300 degreeC of final temperature.

  As described above, in the present invention, a plurality of solution tanks are used. In the example of FIG. 1, the solution tank 11 is used for heating the GaN-based semiconductor wafer 4, the solution tank 12 is used for impurity diffusion, and the solution tank 13 is used for GaN-based semiconductors. Since the semiconductor wafer 4 is divided for cooling, the contact with the solution 21 containing impurities can be almost eliminated during the heating or cooling period of the GaN-based semiconductor wafer 4, and the amount of impurity diffusion can be accurately controlled. can do. Further, by using a solution tank for heating or cooling, heating or cooling can be performed quickly, and the doping operation time can be shortened.

  FIG. 6 is different from FIG. 1 in showing the configuration of a second semiconductor manufacturing apparatus using two solution vessels. Parts denoted by the same reference numerals as those in FIG. 1 indicate the same configuration. As described above, the solution tank 12 is a solution tank for impurity diffusion, and corresponds to the second solution tank. The solution 12 is a mixed solution of Ga melt and a doping metal material. On the other hand, the solution tank 11 is a solution tank that serves as both heating and cooling of the GaN-based semiconductor wafer 4 and corresponds to a first solution tank. The solution 11 is composed only of Ga melt. A GaN-based semiconductor wafer 4 is held on the slider 3 serving as a wafer transfer unit, and the GaN-based semiconductor wafer 4 is heated, diffused, and cooled by moving the slider 3 left and right.

  A method for doping impurities in a GaN-based semiconductor will be described with reference to FIGS. Since the first setting and the like are the same as those of the first semiconductor manufacturing apparatus, description thereof is omitted. First, the outputs of the heaters 6 and 7 are controlled separately so that the temperatures of the solution tanks 11 and 12 reach different temperatures. For example, as shown in FIG. 7, the solution tank 11 is heated to 200 ° C. and the solution tank 12 is heated to 400 ° C. using the heaters 6 and 7.

  Then, the slider 3 is moved in the direction of the arrow, and the GaN-based semiconductor wafer 4 is immersed in the solution tank 11 as shown in FIG. Since the solution 22 in the solution tank 11 is only Ga melt, no reaction occurs between the GaN-based semiconductor wafer 4 moved into the solution tank 11 and the solution 22, and the GaN-based semiconductor wafer 4 is kept at a predetermined temperature. Will be heated up to.

  Immediately after the GaN-based semiconductor wafer 4 is moved to the solution tank 11, the outputs of the heaters 6 and 7 are controlled, and the temperature of the solution tank 11 is set to 600 ° C. and the temperature of the solution tank 12 is set as shown in FIG. Raise to 900 ° C. Then, with the GaN-based semiconductor wafer 4 reaching about 600 ° C., as shown in FIG. 8, the slider 3 is moved in the direction of the arrow, and the GaN-based semiconductor wafer 4 is moved to the next solution bath 12. The solution 21 in the solution tank 12 is a solution in which Ga melt and a doping metal are mixed. Since the solution tank 12 is a solution tank for impurity diffusion, a temperature condition of 900 ° C. is applied to the GaN-based semiconductor wafer 4. Impurity diffusion is performed.

  After the solution tank 12 is maintained at 900 ° C. for a predetermined time and the impurity diffusion into the GaN-based semiconductor wafer 4 is completed, the heaters 6 and 7 are turned off, and the temperature of the solution tank 11 is set to 300 as shown in FIG. The temperature of the solution bath 12 is lowered to 600 ° C. Thereafter, as shown in FIG. 9, the slider 3 is moved in the direction of the arrow (the direction opposite to FIGS. 8 and 9), and the GaN-based semiconductor wafer 4 is returned to the previous solution tank 11. The solution tank 11 at this stage functions as a solution tank for cooling the GaN-based semiconductor wafer 4, where the GaN-based semiconductor wafer 4 is immediately cooled to 300 ° C. From here, you may further cool to the temperature of 300 degrees C or less.

  In the first and second semiconductor manufacturing apparatuses, the temperature of each solution tank is changed before the GaN-based semiconductor wafer 4 is moved, and each solution is moved after the GaN-based semiconductor wafer 4 is moved to the next solution tank. Combined with the step of changing the temperature of the tank, the GaN-based semiconductor wafer 4 is rapidly heated and cooled, and the temperature of the solution tank where the GaN-based semiconductor wafer 4 remains or the temperature of the GaN-based semiconductor wafer 4 and the next solution By keeping the temperature difference from the bath temperature small, a rapid temperature change with respect to the GaN-based semiconductor wafer 4 is avoided, and cracking of the wafer is avoided. However, the temperature of each solution bath is a constant temperature. After being set, the temperature may be maintained as it is, and the heating and cooling may be performed only by moving the slider as the wafer transfer unit.

  FIG. 10 shows a configuration example of a third semiconductor manufacturing apparatus that heats and cools the GaN-based semiconductor wafer only by moving the slider while fixing the temperature of each solution bath. In this example, five solution tanks 11, 12, 13, 14, 15 were provided. Corresponding to the solution tanks 11 to 15, heaters 6, 7, 8, 9, and 10 are arranged. Only the solution 21 put in the solution tank 13 is a mixed solution of Ga melt and impurity metal material, and the solution 22 made of Ga melt is put in the other solution tanks 11, 12, 14, and 15. ing. Here, the solution tank 13 corresponds to the second solution tank, and the solution tanks 11, 12, 14, and 15 correspond to the first solution tank.

  Moreover, by independent control of each heater 6, 7, 8, 9, 10, for example, the solution tank 11 is 300 ° C., the solution tank 12 is 600 ° C., the solution tank 13 is 900 ° C., the solution tank 14 is 600 ° C. The baths 15 are each heated and maintained at 300 ° C., and the impurities in the GaN-based semiconductor wafer 4 are doped, and the temperature of each solution bath does not change until the doping operation is completed. Therefore, the central solution tank 13 is a solution tank for impurity diffusion, the solution tanks 11 and 12 are wafer heating solution tanks, and the solution tanks 14 and 15 are wafer cooling solution tanks.

  The slider 3 is moved in the direction of the arrow, and the GaN-based semiconductor wafer 4 is brought into contact with the solution inside each solution tank in the order of the solution tanks 11, 12, 13, 14, and 15. By doing so, the wafer is heated step by step until the GaN-based semiconductor wafer 4 reaches the solution bath 13, and the solution bath 13 can perform doping at a temperature suitable for impurity diffusion. In the process from the solution tank 13 to the solution tank 15, the cooling is performed step by step. In the example of FIG. 10, the temperature difference between the solution tanks is set to 300 ° C., but the number of solution tanks may be further increased in order to reduce the temperature change.

In the first and second semiconductor manufacturing apparatuses (FIGS. 1 and 6), the time during which the GaN-based semiconductor wafer 4 is immersed in the solution tank 12 for diffusing impurities is maintained at 900 ° C. where the impurities are originally diffused. In the third semiconductor manufacturing apparatus of FIG. 10, the GaN-based semiconductor is included in the solution containing the impurities in the solution tank 13, although the period of cooling from 900 ° C. to 600 ° C. is included. Since the time during which the wafer 4 is immersed is only a period during which impurities are originally diffused and maintained at 900 ° C., more accurate doping can be performed.

It is a figure which shows the structure of the 1st semiconductor manufacturing apparatus by this invention. It is a figure which shows one manufacturing process of doping an impurity using a 1st semiconductor manufacturing apparatus. It is a figure which shows one manufacturing process of doping an impurity using a 1st semiconductor manufacturing apparatus. It is a figure which shows one manufacturing process of doping an impurity using a 1st semiconductor manufacturing apparatus. It is a figure which shows the structure of the fundamental part in the semiconductor manufacturing apparatus by this invention. It is a figure which shows the structure of the 2nd semiconductor manufacturing apparatus by this invention. It is a figure which shows one manufacturing process of doping an impurity using a 2nd semiconductor manufacturing apparatus. It is a figure which shows one manufacturing process of doping an impurity using a 2nd semiconductor manufacturing apparatus. It is a figure which shows one manufacturing process of doping an impurity using a 2nd semiconductor manufacturing apparatus. It is a figure which shows the structure of the 3rd semiconductor manufacturing apparatus by this invention. It is a figure which shows the temperature change of one solution tank, when doping with an impurity with the conventional semiconductor manufacturing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Solution tank 1a Container 1b Insertion slot 2 Ga solution 3 Slider 4 Ga type semiconductor wafer 5 Liquid sealing agent 6, 1, 1 Heater 11, 12, 13 Solution tank 21, 22 Solution

Claims (5)

A semiconductor manufacturing apparatus for doping impurities into a GaN-based semiconductor,
A first solution tank containing a gallium solution; and at least a second solution tank containing a mixed solution of the gallium solution and the impurities and having a temperature different from that of the first solution tank;
A semiconductor manufacturing apparatus, wherein the GaN-based semiconductor is immersed in each solution contained in the first solution tank and the second solution tank, and the GaN-based semiconductor is doped with impurities. In order to immerse the GaN-based semiconductor in each solution contained in the first solution tank and the second solution tank, a carbon wafer transfer unit on which the GaN-based semiconductor is placed is provided.
The semiconductor manufacturing apparatus according to claim 1, wherein an insertion port for inserting the wafer transfer unit is formed in the first solution tank and the second solution tank.   The liquid sealing agent having a specific gravity smaller than that of gallium is formed on the top of each solution contained in the first solution tank and the second solution tank. The semiconductor manufacturing apparatus according to item.   The said 1st solution tank is a solution tank which performs both heating and cooling of the said GaN-type semiconductor by one, The semiconductor manufacturing apparatus of any one of Claims 1-3 characterized by the above-mentioned. The said 1st solution tank is provided with two or more, It has divided into the solution tank for the heating of the said GaN-type semiconductor, and the solution tank for cooling, The any one of Claims 1-3 characterized by the above-mentioned. The semiconductor manufacturing apparatus described in 1.

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