JP2008270595A - Reaction product peeling preventive structure and manufacturing method thereof, and manufacturing method of semiconductor device using the structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reaction product peeling preventive structure capable of preventing or suppressing the peeling of reaction products undesirably sticking and deposited on a member in a chamber of a plasma etching device, and a manufacturing method thereof. <P>SOLUTION: Top surfaces (sticking-preventive surfaces) of an aluminum-made outer liner 40 and an inner liner 42 fitted as sticking-preventive plates in the chamber of the plasma etching device are roughened to surface roughness within a certain range without being subjected to alumite treatment, and thus a reaction product deposited film 50 is prevented from being peeled off, thereby reducing the contamination of a treated body 16 with particles. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a technique for preventing particle contamination of an object to be processed in a chamber of a processing apparatus, and in particular, a reaction product separation preventing structure for preventing generation of particles caused by a reaction product in a plasma etching apparatus and its manufacture. The present invention relates to a method and a method for manufacturing a semiconductor device using the structure.

  In the manufacture of semiconductor devices, liquid crystal display devices, and the like, etching is a technique for processing a thin film on the surface of an object to be processed into a desired circuit pattern using a resist pattern formed by lithography as a mask, and is an indispensable process. In plasma etching, which is currently mainstream, reactive processing gas is ionized and dissociated by high-frequency discharge in a chamber (processing vessel) under reduced pressure to form plasma, and radicals and ions in the plasma are processed (for example, semiconductors). Wafer, glass substrate, etc.) to react with the film to be etched on the substrate surface. Most of the gas phase reaction products and reaction by-products generated by this reaction are discharged out of the chamber by the evacuation mechanism, but some adhere to each part in the chamber to form a deposited film.

  Conventionally, in order to avoid undesired accumulation of reaction products as described above on non-exchange members such as a chamber inner wall and a susceptor (substrate mounting table), an adhesion cover for plate members covering these members, so-called The use of an adhesion preventing plate is also performed. In this case, the reaction product generated during the plasma etching process adheres to and deposits on the deposition plate, so that the members behind the deposition plate (chamber sidewall, susceptor, etc.) are reaction products. It is protected from adhesion / deposition of water and no special cleaning is required.

  In general, the deposition preventing plate is made of anodized aluminum and is manufactured as a replacement part that can be detachably mounted in the chamber. And in use with a plasma etching apparatus, old and new exchange is performed regularly. That is, every time the plasma etching process is performed, a deposition film of a reaction product grows on the deposition plate and the film thickness increases, and if left as it is, the film peels off from the deposition plate in time. It becomes particles and falls on the substrate to be processed, which causes a decrease in product yield. Therefore, before the film peeling occurs, usually when the net use time, that is, the accumulated processing time has reached the set time after the deposition plate is installed in the chamber, the deposition plate is removed from the chamber and replaced with it. A new deposition plate is installed in the chamber. The used adhesion-preventing plate taken out from the chamber is subjected to alumite treatment after scraping the deposited film with a jig such as a brush to clean the surface, and is reused as a recycled part.

  However, in the plasma etching apparatus using the conventional adhesion preventing plate as described above, the deposited film of the reaction product is easily peeled off from the adhesion preventing plate. The plate replacement cycle has to be set short, resulting in a decrease in the device operation rate and an increase in the cost of regenerating the protection plate.

  The present invention has been made in view of the above-described problems of the prior art, and is a reaction product peeling prevention structure that can easily prevent unwanted reaction products from peeling in a chamber of a plasma etching apparatus. And its production method.

  In order to achieve the above object, the reaction product separation preventing structure of the present invention is configured such that an object to be processed is accommodated in a chamber, a predetermined processing gas is introduced into the chamber under reduced pressure, and discharge of the processing gas is performed. A reaction product peeling prevention structure in a plasma processing apparatus in which plasma processing is performed on the object to be processed by plasma generated by the step, wherein the reaction product adheres during the plasma etching processing in the chamber. The surface of the member is roughened so that the deposition film of the reaction product is prevented from peeling from the surface of the predetermined member.

  In the above configuration, by appropriately roughening the surface of the member on which the reaction product adheres and accumulates in the chamber, adhesion between the reaction product and the member surface is increased, and film peeling is suppressed. Particle contamination to the object to be processed due to film peeling is reduced.

  According to a preferred aspect of the present invention, the reaction product is made of an organic polymer and contains carbon, hydrogen, and fluorine. In this case, the processing gas may be a halogen compound containing carbon and fluorine as main components, and may further contain oxygen. The present invention is particularly applicable to plasma etching using a silicon nitride film or a silicon oxide film as an etching target material.

  In a preferred embodiment, the member is made of aluminum, and the surface is roughened without being subjected to an alumite treatment. The surface roughness is preferably in the range of 3 μm ≦ Ra ≦ 9 μm, with Ra being the average roughness, and most preferably around Ra = 4.5 μm (4 μm ≦ Ra ≦ 5 μm).

  For the production of the reaction product peeling preventing structure of the present invention, a sandblasting method can be suitably used. In this case, the particles used for the sandblasting treatment are fine particles of alumina, silica sand or quartz, and the particle size is preferably selected in the range of # 70 to # 150.

  The semiconductor device manufacturing method of the present invention is a method for manufacturing a semiconductor device including a step of performing plasma processing on a semiconductor wafer in a chamber provided with a reaction product deposition member, wherein a predetermined resist pattern has a predetermined resist pattern. A step of introducing the formed semiconductor wafer into the chamber; a step of subjecting the semiconductor wafer to plasma etching; a step of removing the reaction product deposition member in the chamber; and cleaning the removed deposition member. A step, a step of installing the cleaned adhesion preventing member in the chamber, a step of introducing a semiconductor wafer on which a predetermined resist pattern is formed, and a step of performing a plasma etching process on the semiconductor wafer. The average roughness Ra of the surface of the deposition preventing member is in the range of 3 μm ≦ Ra ≦ 9 μm.

  Preferably, the method for manufacturing a semiconductor device may further include a step of subjecting the adhesion-preventing member taken out from the chamber to a rough surface treatment.

  According to the reaction product peeling prevention structure and the manufacturing method thereof, and the method of manufacturing a semiconductor device using the structure of the present invention, an undesired reaction product in the chamber of the plasma etching apparatus is obtained by the above-described configuration and operation. Can be easily prevented.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

  FIG. 1 shows a configuration of a capacitively coupled plasma etching apparatus to which an embodiment of the present invention is applied. A chamber 10 of this plasma etching apparatus is formed as a cylindrical hollow body made of aluminum (Al), and a shower head 12 also serving as an upper electrode and a susceptor 14 also serving as a lower electrode are vertically arranged in parallel at a predetermined interval. Has been placed. An object to be processed such as a semiconductor wafer 16 is placed on the susceptor 14 and is held by a Coulomb force by an electrostatic chuck 18 that is integrally attached to the upper surface of the susceptor. An annular focus ring 20 made of, for example, polycrystalline silicon is detachably attached to the outer peripheral portion of the upper surface of the susceptor 14 so as to surround the semiconductor wafer 16.

  The shower head 12 introduces and mixes a required processing gas (etching gas) from a processing gas supply source (not shown) via processing gas supply pipes 22A and 22B, and the mixed processing gas is a porous gas discharge port. Further, it is ejected in a shower shape toward the susceptor 14 side. The shower head 12 is detachably attached to the upper surface of the chamber 10 via an upper lid 24 made of aluminum, for example, so that the shower head 12 can be easily removed during regular cleaning or maintenance work. Is grounded.

  The susceptor 14 is fixed on a columnar or cylindrical susceptor support portion 28 made of, for example, aluminum and installed on the bottom of the chamber 10 via an insulating plate 26. A high frequency power supply 30 disposed outside the chamber 10 is electrically connected to the susceptor 14 via a matching unit 32.

  The chamber 10 is configured as a sealed and depressurized processing container. A wafer inlet / outlet 34 and a gate valve 35 for taking in and out the semiconductor wafer 16 are attached to the chamber side wall, and an exhaust pipe 36 is provided at the bottom of the chamber. An exhaust port 38 communicating with a vacuum pump (not shown) is provided.

  An outer liner 40 that covers the inner wall of the chamber and an inner liner 42 that covers the outer peripheral surface of the susceptor 14 or the susceptor support portion 28 are detachably attached to the chamber 10 as adhesion prevention plates. More specifically, the outer liner 40 has a cylindrical side wall liner portion 40a extending in the vertical direction so as to cover the side wall of the chamber 10, and an annular shape extending in the horizontal direction so as to cover the ceiling of the chamber 10 around the shower head 12. It consists of a ceiling liner part 40b, and the outer peripheral end of the ceiling liner part 40b is integrally connected to the upper end of the side wall liner part 40a. The side wall liner portion 40 a is provided with an internal wafer entrance / exit 44 and a shutter 46 at a portion facing the gate valve 35. The inner liner 42 faces the side wall liner portion 40a of the outer liner 40 and forms an annular exhaust space 48 that communicates with the exhaust port 38 at the bottom of the chamber.

  Both the outer liner 40 and the inner liner 42 are made of aluminum, and each front surface is roughened to an appropriate surface roughness within a predetermined range as described in detail later.

This plasma etching apparatus preferably uses a silicon nitride film or a silicon oxide film formed on the main surface of the semiconductor wafer 16 as the material to be etched. In the plasma etching process, a fluorine compound gas such as CH _x F _4-x (x = 1, 2 or 3) is supplied from the process gas supply source through the first process gas supply pipe 22A and the second process gas supply pipe 22B. And oxygen gas are introduced into the shower head 12, both gases are mixed in the shower head 12, and discharged from the porous gas discharge port toward the semiconductor wafer 16 on the susceptor 14 as indicated by an arrow. On the other hand, the inside of the chamber 10 is decompressed to a predetermined pressure by a vacuum pump, and a high frequency of a predetermined frequency is applied to the susceptor 14 from the high frequency power supply 30 with a predetermined power.

  As a result, the processing gas is plasma-excited with high-frequency power in a region (plasma generation space) between the shower head (upper electrode) 12 and the susceptor (lower electrode) 14. By this plasma excitation, the processing gas is decomposed and activated, and active species such as fluorine and oxygen are generated. These active species are molecules or atoms in an excited state such as ions or neutral radicals, and are in a state in which a chemical reaction is likely to occur, and easily react with the material to be etched of the semiconductor wafer 16. The gas phase product produced by this reaction is an organic polymer containing the elements C, H, and F, and most of them are exhausted through the exhaust space 48 as exhaust gas together with unreacted active species and processing gas. 38 is discharged out of the chamber 10.

  However, a part of the reaction product is not discharged out of the chamber 10, but adheres to the surrounding wall surface, that is, the inner wall (an adhesion surface) of the outer liner 40 and the outer wall (an adhesion surface) of the inner liner 42, A deposited film 50 is formed. As the plasma etching process is repeated, the thickness of the reaction product deposited film 50 increases. In this way, the outer liner 40 and the inner liner 42 serve as shields to attach and deposit reaction products on the respective front surfaces (adhesion surfaces). Almost or little reaction product is deposited or deposited on the inner wall and the outer peripheral surface of the susceptor support 28.

  In this embodiment, in order to effectively prevent or suppress the deposition film 50 of the reaction product from being peeled off from the outer liner 40 and the inner liner 42, the adhesion surfaces of both the liners 40 and 42 are set within a predetermined range. The surface is roughened to a rough surface. Specifically, it is preferable that the lower limit of the surface roughness of the adhesion preventing surfaces of both liners 40 and 42 satisfies the condition of 3 μm ≦ Ra, where Ra is the average roughness. When Ra is less than 3 μm, as will be described in detail later, the adhesion with the reaction product deposited film 50 is deteriorated, and film peeling is likely to occur. The upper limit of Ra preferably satisfies the condition of Ra ≦ 9 μm. When Ra exceeds 9 μm, film peeling due to the difference in coefficient of thermal expansion between the material (aluminum) of both liners 40 and 42 and the reaction product deposited film 50 is likely to occur. In this embodiment, it has been experimentally confirmed that Ra = 4.5 μm (4 μm ≦ Ra ≦ 5 μm) is most effective in reducing film peeling within a range of 3 μm ≦ Ra ≦ 9 μm.

  FIG. 2 shows the net deposition plate use time (cumulative processing time) and deposition plates (outer liner 40 and inner liner 42) when the plasma etching process of the silicon nitride film is repeated in the plasma etching apparatus of this embodiment. The relationship with the film thickness of the above reaction product deposited film 50 is shown. As shown in the figure, as the usage time increases, the film thickness of the reaction product deposition film 50 also increases monotonically with a substantially constant proportional coefficient C (C = 1.3384 in the example shown).

  In this embodiment, even if the usage time exceeds 115 hours and the film thickness of the reaction product deposited film 50 reaches 153 μm, as shown schematically in FIG. The reaction product deposited film 50 was firmly adhered to the surface), and no film peeling occurred. Although not shown, the reaction product deposited film 50 was not peeled off at all in the inner liner 42 as well.

  On the other hand, as a comparative example, when the alumite treatment (52) is applied to the adhesion-preventing surfaces of the outer liner 40 and the inner liner 42 as in the prior art, the reaction product is still present when the usage time exceeds 50 hours. At the stage where the film thickness of the deposited film 50 is 67 μm, as shown in FIG. 4, the reaction product deposited film 50 is peeled off from the inner wall (anti-adhesion surface) of the outer liner 40 to expose the alumite layer 52. It was. Also in the inner liner 42, although not shown, the reaction product deposited film 50 was also peeled off. The surface roughness of the alumite layer 52 has an average roughness Ra of 2 μm or less.

  As described above, the adhesion surface of the outer liner 40 and the inner liner 42 made of Al functioning as an adhesion-preventing plate in the chamber 10 has a surface roughness within a certain range (3 μm ≦ Ra ≦ 9 μm) without being anodized. By roughening, peeling of the reaction product deposition film 50 can be suppressed, and particle contamination on the surface of the semiconductor wafer 16 can be reduced. In addition, the reaction product deposited film 50 is less likely to be peeled off from the outer liner 40 and the inner liner 42, so that it is possible to extend the periodic cleaning in the chamber 10 or the interval (cycle) for replacing the liner. It is possible to improve and reduce the cost of recycling the protective plate.

  Here, with reference to the schematic diagram of FIG. 5, the effect | action of the adhesion prevention board (especially adhesion prevention surface) in this invention is demonstrated. FIG. 5A shows a case where the surface roughness of the adhesion-preventing plate is Ra = 4.5 μm according to the present invention. In this case, in the plasma etching of the silicon nitride film or silicon oxide film, the reaction product 50 of the organic polymer containing the elements C, H, and F becomes, for example, a bundle of fibers as shown by simulating white circles in the figure. Thus, the lowermost layer portion of the film is embedded and deposited in the uneven portion on the surface of the deposition preventing plate. Thus, since the contact | adherence area between the fiber of the reaction product 50 and the uneven | corrugated | grooved part on the surface of an adhesion prevention board is large, the adhesive strength (bonding force) between both is large.

  On the other hand, FIG. 5B shows a case where the surface roughness of the deposition preventing plate is Ra = 2 μm. When the surface of the Al-made deposition preventing plate is anodized as in the prior art, the surface roughness is as fine as this. In this case, the reaction product 50 of the organic polymer does not enter the uneven portion on the surface of the deposition preventing plate, but adheres and accumulates on the convex portion so that the contact area is small and the degree of adhesion is good. No film peeling occurs from the interface.

  In general, in the adhesion of the reaction product of the organic polymer to the surface of the adhesion-preventing plate, the bond at the atomic level or molecular level is at the physical adsorption level and is not so strong. However, the adhesion preventing plate according to the present invention increases the adhesion or adhesion area with the reaction product deposited film with an appropriate surface roughness, even if the adhesion force is not so strong by nature, and peels off the film. It can be effectively suppressed.

Next, with reference to the flowchart of FIG. 6, an example of a method for reusing the deposition preventing plates (the outer liner 40 and the inner liner 42) in this embodiment will be described. First, when periodically replacing the protection plate in the chamber 10, plasma cleaning is performed before removing the outer liner 40 and the inner liner 42 that have been used so far. More specifically, a mixed gas of fluorine-based gas and oxygen-based gas not containing carbon, such as NF ₃ (nitrogen trifluoride), for example, is introduced into the chamber 10 as a cleaning gas, and these gases are plasma-excited. Then, the surface inside the chamber 10 is cleaned (step S1). By this plasma cleaning, a part of the reaction product deposited film 50 attached to the adhesion preventing surfaces of the liners 40 and 42 is removed.

  After the plasma cleaning, the chamber upper cover 24 and the shower head 12 are removed, and the outer liner 40 and the inner liner 42 are taken out of the chamber 10. Then, the reaction product deposited film 50 remaining on the adhesion-preventing surfaces of the liners 40 and 42 is scraped off (step S2). In this scrubbing, the adhesion-preventing surface may be rubbed with a nonwoven fabric or a resin brush.

  Next, the adhesion-preventing surfaces of the liners 40 and 42 are cleaned by, for example, ultrasonic cleaning immersed in pure water or cleaning using a chemical solution (step S3).

  Next, the adhesion-preventing surfaces of the liners 40 and 42 are sandblasted (step S4). The particles used for the sandblasting treatment may be fine particles such as silica sand, quartz, alumina, etc., and the particle size is preferably in the range of # 70 to # 150, and the particle size # 100 is particularly preferable. By this sandblast treatment, the adhesion-preventing surfaces of the liners 40 and 42 are roughened to a surface roughness within the above-mentioned predetermined range (3 μm ≦ Ra ≦ 9 μm). It is preferable to classify the fine particles used for the sandblast treatment by, for example, sieving so that the particle diameters thereof are uniform. The particle size # corresponds to the approximate number of fine particles that can be arranged in 10 mm square.

  Thereafter, the adhesion-preventing surfaces of the outer liner 40 and the inner liner 42 roughened by sandblasting are washed (step S5). In this cleaning step, a cleaning method capable of efficiently removing particles adhering to the adhesion-preventing surfaces of the liners 40 and 42, for example, ultrasonic cleaning or chemical solution cleaning may be used.

  As described above, the regeneration processing of the outer liner 40 and the inner liner 42 is performed. Then, the regenerated outer liner 40 and inner liner 42 are mounted in the chamber 10 of the plasma etching apparatus by regular replacement and are reused.

  In addition, after the cleaning process of the above step S3, the surface roughness Ra of the adhesion-preventing surfaces of the liners 40 and 42 is measured with a surface roughness meter, and the sandblasting is performed only when the value of Ra is out of the allowable range. Processing may be performed. Usually, the adhesion-preventing surface 45 becomes smooth while the use as the adhesion-preventing plate in the chamber 10 and the above steps S1, S2, and S3 are repeated. Therefore, when a film thickness measurement result of Ra <3 μm is obtained, the sandblasting process may be performed in the step S4. Alternatively, the plasma cleaning (step S1) in the chamber 10 may be omitted, and the regeneration process may be started from rubbing the reaction product deposited film 50 (step S2).

  According to the present invention, the surface of various members other than the adhesion-preventing plate used in the chamber of the plasma etching apparatus is roughened to a surface roughness within the predetermined range (3 μm ≦ Ra ≦ 9 μm). As a result, it is possible to obtain the same peeling prevention or suppression effect as described above for the reactive biodeposited film. In this case, as a material of the member subjected to such surface roughness, other than Al, for example, quartz glass, aluminum nitride, stainless steel, or the like may be used.

  The present invention can be suitably applied to a plasma etching apparatus using a silicon nitride film or a silicon oxide film as an etching material, and other plasma processing apparatuses such as PECVD (Plasma Enhanced Chemical Vapor Deposition) apparatus have a remarkable effect. I can't get it.

  Although the preferred embodiments of the present invention have been described above, the above-described embodiments do not limit the present invention. Those skilled in the art can make various modifications and changes in specific embodiments without departing from the technical idea and technical scope of the present invention.

  For example, in the above embodiment, the surface roughening treatment performed on the surface of various members such as an adhesion-preventing plate in order to suppress the peeling of the reactive biodeposited film is not limited to the sandblast treatment as described above, It may be formed by etching the surface of the member by physical rubbing.

  Further, the object to be processed in the present invention is not limited to a semiconductor wafer, and may be, for example, a glass substrate used in a liquid crystal display device. The plasma etching apparatus to which the present invention is applicable is not limited to the type of the above embodiment. For example, the reaction product peeling preventing structure of the present invention can be applied to an anode-coupled plasma etching apparatus in which a lower electrode is grounded and a high frequency is applied to the upper electrode.

It is a longitudinal cross-sectional view which shows the structure of the plasma etching apparatus in one Embodiment of this invention. It is a graph which shows the relationship between the usage time of the adhesion prevention board in the plasma etching apparatus of embodiment, and the film thickness of the reaction product deposited on an adhesion prevention board. It is a figure which shows the adhesion prevention surface state of the adhesion prevention board at the time of the film thickness of the reaction product deposited film reaching predetermined value in embodiment. In a comparative example, it is a figure which shows the adhesion prevention surface state of the adhesion prevention board at the time of the film thickness of the reaction product deposited film reaching a predetermined value. It is a schematic diagram for demonstrating the effect | action of this invention in the surface of an adhesion prevention board. It is a schematic diagram for demonstrating the effect | action of the comparative example (conventional example) in the surface of an adhesion prevention board. It is a flowchart which shows an example of the reuse method (procedure) of the adhesion prevention board in embodiment.

Explanation of symbols

10 Chamber 12 Shower head (upper electrode)
14 Susceptor (lower electrode)
16 Semiconductor wafer (object to be processed)
30 High frequency power supply 38 Exhaust port 40 Outer liner (protection plate)
42 Inner liner (protection plate)
50 Reaction product deposited film

Claims (15)

A plasma processing apparatus in which a target object is accommodated in a chamber, a predetermined processing gas is introduced into the chamber under reduced pressure, and plasma etching is performed on the target object by plasma generated by discharge of the processing gas A reaction product peeling prevention structure in which
The surface of the member is roughened so as to prevent the deposition film of the reaction product from peeling from the surface of the predetermined member to which the reaction product adheres during the plasma etching process in the chamber. Reaction product peeling prevention structure.   The reaction product peeling prevention structure according to claim 1, wherein the reaction product is made of an organic polymer.   The reaction product peeling prevention structure according to claim 2, wherein the reaction product contains carbon, hydrogen, and fluorine.   The reaction product exfoliation preventing structure according to any one of claims 1 to 3, wherein the processing gas contains a halogen compound containing carbon and fluorine as main components.   The reaction product peeling prevention structure according to claim 4, wherein the processing gas contains oxygen.   The reaction product peeling prevention structure according to any one of claims 1 to 5, wherein the object to be processed includes a silicon nitride film or a silicon oxide film as a material to be etched.   The reaction product peeling prevention structure according to claim 1, wherein the member is made of aluminum.   The reaction product exfoliation preventing structure according to any one of claims 1 to 7, wherein an average roughness of a surface of the member is in a range of 3 µm ≤ Ra ≤ 9 µm as Ra.   The reaction product peeling prevention structure according to claim 8, wherein the average roughness of the surface of the member is in the range of 4 μm ≦ Ra ≦ 5 μm as Ra.   The reaction product peeling prevention structure according to any one of claims 1 to 9, wherein the member includes a first deposition preventing plate that covers at least a part of the inner wall of the chamber.   The reaction product peeling according to any one of claims 1 to 10, wherein the member includes a second adhesion-preventing plate that covers at least a part of a surface of a mounting table on which the object to be processed is mounted and supported. Prevention structure. A method for producing the reaction product delamination prevention structure according to any one of claims 1 to 11,
A method for producing a reaction product peeling prevention structure in which a surface of the member is subjected to a sandblast treatment.   13. The method for producing a reaction product exfoliation preventing structure according to claim 12, wherein the particles used for the sand blasting treatment are fine particles of alumina, silica sand or quartz, and the particle size thereof is in the range of # 70 to # 150. A method of manufacturing a semiconductor device including a step of performing plasma processing on a semiconductor wafer in a chamber provided with a reaction product deposition member,
Introducing a semiconductor wafer on which a predetermined resist pattern is formed into the chamber;
Performing a plasma etching process on the semiconductor wafer;
Removing the reaction product deposition member in the chamber;
A step of cleaning the removed adhesion-preventing member;
Installing the cleaned deposition preventing member in the chamber;
Introducing a semiconductor wafer on which a predetermined resist pattern is formed into the chamber;
Performing a plasma etching process on the semiconductor wafer,
A method of manufacturing a semiconductor device, wherein the surface roughness Ra of the deposition preventing member is in the range of 3 μm ≦ Ra ≦ 9 μm.   The method of manufacturing a semiconductor device according to claim 14, further comprising a step of performing a rough surface treatment on the adhesion-preventing member taken out from the chamber.

Images