JP2008137103A - Substrate holding device, substrate polishing device, and substrate polishing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate holding device and a substrate polishing device which stop leakage of a pressurized fluid quickly without interrupting operation in a polishing process even while a substrate is polished when airtightness in a pressure chamber is not kept and the pressurized fluid leaks. <P>SOLUTION: This substrate holding device provided with a top ring 1 holding the substrate W and pressing it against a polishing face 101, the pressure chamber 22 formed by an elastic membrane 7 provided on the top ring 1 and the substrate W, and a pressurized fluid feeding means for feeding the pressurized air into the pressure chamber 22 has a sensor S1 for detecting leakage of the pressurized fluid in a closely adhered part of the elastic membrane 7 and the substrate W and a pressurized fluid supply pressure adjusting means (a pressure controller P3) for adjusting supply pressure of the pressurized fluid. When leakage of the pressurized fluid is detected by a pressurized fluid leakage detection means, supply pressure of the pressurized fluid is temporarily reduced by the pressurized fluid supply pressure adjusting means to stop leakage of the pressurized fluid. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a substrate holding device that holds a substrate such as a semiconductor wafer that is an object to be polished and presses the substrate against a polishing surface, a substrate polishing device that includes the substrate holding device, and a substrate polishing method.

  In recent years, semiconductor devices have become increasingly finer and the element structure has become more complex, and as the number of layers of logic-based multilayer wiring has increased, the unevenness of the surface of the semiconductor device has increased and the level difference has a tendency to increase. This is because, in the manufacture of semiconductor devices, the process of forming a thin film, micropatterning for patterning and opening and then forming the next thin film is repeated many times.

  If the irregularities on the surface of the semiconductor device increase, the film thickness at the stepped part will become thinner during thin film formation, open due to disconnection of the wiring, short circuit due to insulation failure between wiring layers, etc. There is a tendency to decrease. Further, even if the device normally operates normally, there is a possibility that a problem of reliability may occur when used for a long time. Furthermore, if the irradiation surface has irregularities at the time of exposure in the lithography process, the lens focus of the exposure system becomes partially unfocused. Therefore, if the irregularities on the surface of the semiconductor device increase, it becomes difficult to form a fine pattern itself.

  Therefore, in the semiconductor device manufacturing process, a planarization technique for the surface of the semiconductor device is becoming more and more important. Among the planarization techniques, the most important technique is chemical mechanical polishing (CMP). This chemical mechanical polishing uses a substrate polishing apparatus to supply a polishing liquid containing abrasive grains such as silica (SiO 2) onto a polishing surface such as a polishing pad while using a substrate such as a semiconductor wafer as a polishing surface. Polishing is carried out in sliding contact.

  The substrate polishing apparatus as described above includes a polishing table having a polishing surface made of a polishing pad, and a substrate holding apparatus called a top ring or a carrier head for holding the substrate. When polishing a substrate using such a substrate polishing apparatus, the substrate is pressed against the polishing table with a predetermined pressure while the substrate is held by the substrate holding device. At this time, by relatively moving the polishing table and the substrate holding device, the surface to be polished of the substrate is brought into sliding contact with the polishing surface, and the surface of the substrate is polished to a flat and mirror surface.

In such a substrate polishing apparatus, when the relative pressing force between the substrate being polished and the polishing surface of the polishing pad is not uniform over the entire surface of the substrate, the pressing force applied to each part of the substrate Depending on the situation, insufficient polishing or excessive polishing will occur. Therefore, the holding surface of the substrate in the substrate holding device is formed of an elastic film (membrane) made of an elastic material such as rubber, and a pressure chamber is formed on the back side of the elastic film, and air or the like is pressurized in the pressure chamber. By applying a pressure by supplying a fluid, the pressing force of the substrate on the polishing surface is made uniform over the entire surface.
JP 2004-81507 A

  By the way, in the polishing apparatus as described above, an opening for adsorbing the substrate or an opening for directly pressing the substrate with a pressurized fluid is provided in a portion of the elastic film forming the pressure chamber that is in close contact with the substrate. However, when a part of the elastic film that is in close contact with the substrate is lifted, the pressurized fluid may leak from the pressure chamber through these openings. Such a leakage of pressurized fluid may occur in an ordinary polishing process, rarely regardless of a polishing apparatus failure or the like depending on polishing conditions in which a high load is applied to the substrate. The leakage in that case is not a problem if it stops in a short time, but if it occurs before the middle of the polishing process and continues until the end, there is a possibility that the polishing rate of the substrate does not reach the required polishing rate. Therefore, appropriate measures against this leakage are necessary. Therefore, conventionally, when a leak of pressurized fluid as described above is detected, a measure is taken to stop the substrate polishing process.

  However, if the polishing process is stopped when leakage is detected, the supply pressure of the pressurized fluid or the like in the polishing process that is restarted afterwards in order to compensate for the shortage of the polishing amount of the substrate due to the shortening of the polishing process time. Polishing must be performed by changing the operating conditions of the apparatus, such as the set value of the polishing time, and the substrate polishing process becomes complicated, and it is difficult to improve the processing efficiency. In addition, once the polishing process is interrupted, the subsequent polishing process is often stopped. In this case, the substrate that has been polished halfway must be discarded, which may result in wasted material.

  The present invention has been made in view of the above points, and the purpose of the present invention is, in the case where a pressurized fluid leaks without maintaining the airtightness of the pressure chamber, even during the polishing process of the substrate, It is an object of the present invention to provide a substrate holding device capable of quickly stopping leakage of pressurized fluid without interrupting the polishing process, and a substrate polishing device including the substrate holding device.

  In order to solve the above-mentioned problem, the invention according to claim 1 of the present application provides a substrate holding member having a substrate holding surface for holding a substrate and the substrate held on the substrate holding surface of the substrate holding member as a polishing surface. In a substrate holding apparatus comprising a pressure chamber for pressing and a pressurized fluid supply means for supplying a pressurized fluid to the pressure chamber, a pressurized fluid leak detecting means for detecting leakage of the pressurized fluid from the pressure chamber And a pressurized fluid supply pressure adjusting means for adjusting a supply pressure of the pressurized fluid, and the pressurized fluid leakage detecting means detects the pressurized fluid from a gap formed between the substrate and the pressure chamber. When leakage is detected, the pressurized fluid supply pressure adjusting means temporarily reduces the pressurized fluid supply pressure to stop the pressurized fluid from leaking. In addition, here, when a plurality of the pressure chambers are installed, it is possible to reduce only the supply pressure of the pressurized fluid to the leaking pressure chamber, and not only the leaking pressure chamber but all of the pressure chambers. There is a case where the supply pressure of the pressurized fluid to the pressure chamber is lowered.

  According to a second aspect of the present invention, in the substrate holding device according to the first aspect, the pressure chamber is defined by an elastic film that is in close contact with the substrate included in the substrate holding member and the substrate. The pressurization fluid leak detection means comprises a space, and detects the leak of the pressurization fluid in a close contact portion between the elastic film and the substrate.

  According to a third aspect of the present invention, in the substrate holding device according to the first or second aspect, the pressurized fluid leakage detection means monitors the flow state of the pressurized fluid flowing into the pressure chamber. It is a sensor for detecting leakage of the pressurized fluid.

  The invention according to claim 4 of the present application is the substrate holding apparatus according to any one of claims 1 to 3, wherein the supply pressure of the pressurized fluid lowered by the pressurized fluid supply pressure adjusting means is The pressure is set to be not more than half of the supply pressure of the pressurized fluid before the pressurized fluid leaks.

  According to a fifth aspect of the present invention, in the substrate holding device according to any one of the first to fourth aspects, the supply pressure of the pressurized fluid is temporarily reduced by the pressurized fluid supply pressure adjusting means. The time is within 5 seconds.

  The invention according to claim 6 of the present application includes a polishing table having a polishing surface, and a substrate holding device that holds the substrate and presses the substrate against the polishing surface of the polishing table, and the rotation of the substrate holding device and the 6. A substrate polishing apparatus that polishes the substrate by relative movement of the substrate and the polishing surface by rotation of a polishing table, comprising the substrate holding apparatus according to any one of claims 1 to 5. It is characterized by that.

  The substrate holding apparatus according to claim 7 of the present application is the substrate polishing apparatus according to claim 6, wherein the pressurized fluid leakage detection means of the substrate holding apparatus detects the leakage of the pressurized fluid. The rotational speed of the polishing table is reduced.

  The invention according to claim 8 of the present application is provided with a polishing table having a polishing surface and the substrate holding device according to any one of claims 1 to 5, wherein the substrate held by the substrate holding device is polished. In a substrate polishing method in which the substrate is polished by relative movement between the substrate and the polishing surface by pressing against the polishing surface of the table, the pressurized fluid leakage detecting means leaks the pressurized fluid during the substrate polishing step. Is detected, the supply pressure of the pressurized fluid is temporarily reduced by the pressurized fluid supply pressure adjusting means without stopping the polishing process of the substrate, and the leakage of the pressurized fluid is stopped. To do.

  According to the first aspect of the present invention, the pressurized fluid leakage detecting means for detecting the leakage of the pressurized fluid from the pressure chamber, and the pressurized fluid supply pressure adjusting means for adjusting the supply pressure of the pressurized fluid This is equivalent to restarting polishing by temporarily reducing the supply pressure of the pressurized fluid by the pressurized fluid supply pressure adjusting means when the pressurized fluid leakage detection means detects the leakage of the pressurized fluid. As a result, the leakage of the pressurized fluid is stopped and the polishing can be continued. Accordingly, even when a pressurized fluid leaks during polishing of the substrate, the leakage of the pressurized fluid can be stopped quickly without interrupting the polishing process, and the efficiency of the polishing process of the substrate can be improved. .

  According to the invention described in claim 2 of the present application, the pressure chamber includes a space defined by the elastic film and the substrate that are in close contact with the substrate included in the substrate holding member. Since the leak of pressurized fluid at the close contact part of the membrane and the substrate is detected, the contact between the elastic film and the substrate is incomplete, resulting in a gap in the close contact part and leakage of the pressurized fluid from the pressure chamber. In addition, the substrate holding device can detect this leak and quickly stop it.

  According to the invention described in claim 3 of the present application, the pressurized fluid leakage detection means is a sensor that detects the leakage of the pressurized fluid by monitoring the flow state of the pressurized fluid flowing into the pressure chamber. With the configuration, it is possible to reliably detect the leakage of the pressurized fluid from the pressure chamber, and it is possible to prevent occurrence of problems such as a decrease in the polishing amount due to the leakage of the pressurized fluid.

  According to the invention described in claim 4 of the present application, the supply pressure of the pressurized fluid lowered by the pressurized fluid supply pressure adjusting means to stop the leakage of the pressurized fluid is the same as that before the leakage of the pressurized fluid occurs. Since the pressure is set to less than half of the pressurized fluid supply pressure, the amount of change in the polishing rate due to a decrease in the pressurized fluid supply pressure can be minimized, which has an effect on the substrate polishing process. Can be reduced.

  According to the invention described in claim 5 of the present application, the supply pressure of the pressurized fluid is reduced by shortening the time for temporarily reducing the supply pressure of the pressurized fluid by the pressurized fluid supply pressure adjusting means. The amount of change in the polishing rate due to this can be minimized, and the influence on the polishing process of the substrate can be reduced.

  According to invention of Claim 6 of this application, it is equipped with the polishing table which has a grinding | polishing surface, and the board | substrate holding apparatus which hold | maintains a board | substrate and presses this board | substrate to the grinding | polishing surface of a grinding | polishing table. In a substrate polishing apparatus for polishing a substrate by relative movement between the substrate and the polishing surface by rotating the table, the substrate holding apparatus according to any one of claims 1 to 5 is provided as a substrate holding apparatus. Even when a pressurized fluid leak occurs in the middle, the leak of the pressurized fluid can be quickly stopped, the normal state can be restored, and the substrate polishing apparatus capable of reducing the influence on the substrate polishing process can be obtained. .

  According to the invention described in claim 7 of the present application, when the pressurized fluid leakage detecting means of the substrate holding device detects the leakage of the pressurized fluid, the rotational speed of the substrate holding device and the polishing table is reduced. Thus, the rotational force acting between the substrate and the pressure chamber is reduced by this rotation, so that the leakage of the pressurized fluid can be quickly stopped and the substrate polishing apparatus can be restored to the normal state.

  According to the invention described in claim 8 of the present application, when the pressurized fluid leakage detecting means detects the leakage of the pressurized fluid during the polishing process of the substrate, the pressurized fluid is supplied without stopping the polishing process of the substrate. Pressure supply means temporarily reduces the supply pressure of pressurized fluid to stop the leakage of pressurized fluid, so even if pressurized fluid leaks during substrate polishing, the polishing process is not interrupted The leakage of the pressurized fluid can be stopped quickly, and the efficiency of the substrate polishing process can be improved.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a side view showing the overall configuration of a substrate polishing apparatus provided with a substrate holding apparatus according to an embodiment of the present invention. As shown in the figure, a top ring 1 constituting the substrate holding device is a device that holds a substrate W such as a semiconductor wafer as an object to be polished and presses it against a polishing surface described below of a polishing table 100. Below the top ring 1, a polishing table 100 to which a polishing pad 101 having a polishing surface is attached is installed. A polishing liquid supply nozzle 102 is provided above the polishing table 100, and the polishing liquid Q is supplied onto the polishing pad 101 by the polishing liquid supply nozzle 102. The configuration of the polishing surface of the present invention is not limited to the polishing surface constituted by the polishing pad 101 described above, and may be a polishing surface formed by fixed abrasive grains.

  The top ring 1 is connected to a top ring drive shaft 11 via a universal joint portion 10, and the top ring drive shaft 11 is connected to a top ring air cylinder 111 fixed to a top ring head 110. The top ring drive shaft 11 is moved up and down by the top ring air cylinder 111 to raise and lower the entire top ring 1, and the retainer ring 3 fixed to the lower end of the top ring body 2 is attached to the polishing pad 101 on the polishing table 100. It is designed to be pressed.

  The top ring air cylinder 111 is connected to a compressed air source 120 which is a pressurized fluid supply source via a fluid path 31 and a pressure controller P1, and is supplied to the top ring air cylinder 111 by the pressure controller P1. The air pressure of the compressed air can be adjusted. Thereby, the pressing force with which the retainer ring 3 presses the polishing pad 101 can be adjusted.

  The top ring drive shaft 11 is connected to the rotary cylinder 112 through a key (not shown). The rotating cylinder 112 includes a timing pulley 113 on the outer periphery thereof. A top ring motor 114 is fixed to the top ring head 110, and a timing pulley 116 is fixed to a rotating shaft 114a thereof. A timing belt 115 is suspended from the timing pulley 113 and the timing pulley 116. With this configuration, when the top ring motor 114 is activated, the rotary cylinder 112 and the top ring drive shaft 11 rotate integrally through the timing pulley 116, the timing belt 115, and the timing pulley 113. Due to the rotation of the top ring drive shaft 11, the top ring 1 is rotated via a rotational force transmission mechanism of the universal joint portion 10 described below. The top ring head 110 is supported by a top ring head shaft 117 that is rotatably supported by a frame (not shown).

  Here, the configuration of the top ring 1 will be described in detail. FIG. 2 is a longitudinal sectional view showing a detailed configuration of the top ring 1. As shown in FIG. 1, the top ring 1 includes a cylindrical container-shaped top ring body 2 having an accommodating space therein, and an annular retainer ring 3 fixed to the lower end of the top ring body 2. .

  The top ring main body 2 includes a cylindrical container-like housing portion 2a and an annular pressure sheet support portion 2b fitted inside the cylindrical portion of the housing portion 2a. A retainer ring 3 is fixed to the lower end of the housing portion 2 a of the top ring body 2. The lower part of the retainer ring 3 protrudes inward. The top ring body 2 is formed of a material having high strength and rigidity such as metal and ceramics. The retainer ring 3 is made of a highly rigid resin material or ceramics. The retainer ring 3 may be formed integrally with the top ring main body 2.

  The above-described top ring drive shaft 11 is disposed above the central portion of the housing portion 2a of the top ring main body 2. The top ring main body 2 and the top ring drive shaft 11 are connected by a universal joint portion 10. Yes. The universal joint portion 10 includes a spherical bearing mechanism that allows the top ring body 2 and the top ring drive shaft 11 to tilt relative to each other, and a rotational force transmission mechanism that transmits the rotational force of the top ring drive shaft 11 to the top ring body 2. The pressure force and the rotational force are transmitted from the top ring drive shaft 11 to the top ring body 2 while allowing the tilting of the top ring body 2.

  The spherical bearing mechanism includes a spherical recess 11a formed at the center of the lower surface of the top ring drive shaft 11, a spherical recess 2d formed at the center of the upper surface of the housing portion 2a, and an intervening space between the recesses 11a and 2d. And a bearing ball 12 made of a high hardness material such as ceramic. On the other hand, the rotational force transmission mechanism includes a drive pin (not shown) fixed to the top ring drive shaft 11 and a driven pin (not shown) fixed to the housing portion 2a. Even if the top ring main body 2 is inclined, the driven pin and the driving pin can move relatively in the vertical direction, so that they are engaged with each other by shifting their contact points, and the rotational force transmission mechanism is connected to the top ring driving shaft 11. The rotational torque is reliably transmitted to the top ring body 2.

  In the space defined inside the top ring main body 2 and the retainer ring 3 fixed integrally to the top ring main body 2, an annular holder ring 5 and a vertical movement in the accommodating space inside the top ring main body 2 are moved. A possible substantially disk-shaped chucking plate (vertical moving member) 6 is accommodated. The chucking plate 6 may be made of a metal material. However, the thin film formed on the surface of the chucking plate 6 by a film thickness measuring method using eddy current in a state where the substrate to be polished is held on the top ring 1. In the case of measuring the film thickness, it is preferable that the film is formed from a non-magnetic material, for example, an insulating material such as epoxy glass, fluorine resin, or ceramics.

  An elastic pressure sheet 13 is stretched between the holder ring 5 and the top ring body 2. The pressure sheet 13 is formed of a rubber material having excellent strength and durability, such as ethylene propylene rubber (EPDM), polyurethane rubber, or silicon rubber. One end of the pressure sheet 13 is pressed against the housing portion 2 a of the top ring body 2. The other end is sandwiched between the holder ring 5 and the chucking plate 6 and fixed to the sheet support portion 2b. A pressure chamber 21 is formed inside the top ring body 2 by the top ring body 2, the chucking plate 6, the holder ring 5, and the pressure sheet 13. In addition, a fluid path 32 including a tube, a connector, and the like communicates with the pressure chamber 21, and the pressure chamber 21 is connected to the compressed air source 120 via a pressure controller P <b> 2 disposed on the fluid path 32.

  In the case where the pressure sheet 13 is an elastic body such as rubber, when the pressure sheet 13 is sandwiched and fixed between the retainer ring 3 and the top ring body 2, the pressure sheet 13 as an elastic body. Due to the elastic deformation, a preferable plane cannot be obtained on the lower surface of the retainer ring 3. Therefore, in order to prevent this, in the present embodiment, the pressure sheet support portion 2b is provided as a separate member and is fixed by being sandwiched between the housing portion 2a and the pressure sheet support portion 2b of the top ring body 2. is doing. The retainer ring 3 can be moved up and down with respect to the top ring body 2, or the retainer ring 3 can be configured to be pressed independently from the top ring body 2. The method for fixing the pressure sheet 13 described above is not always used.

  An annular outer peripheral abutting portion 15 that abuts on the substrate W held by the top ring 1 is provided on the outer peripheral edge portion of the chucking plate 6. The outer peripheral contact portion 15 includes an elastic film (edge membrane) 7 that is in close contact with the upper surface side of the outer peripheral portion of the substrate W. FIG. 3 is a partial enlarged cross-sectional view of the top ring 1 shown in FIG. As shown in FIG. 3A, the elastic film 7 is attached to the chucking plate 6 with its upper end sandwiched between the outer peripheral edge of the chucking plate 6 and the annular edge ring 4. Similar to the pressure sheet 13, the elastic film 7 is formed of a rubber material having excellent strength and durability, such as ethylene propylene rubber (EPDM), polyurethane rubber, and silicon rubber.

  The elastic film 7 includes an annular contact portion 8 that contacts the upper surface of the outer peripheral portion of the substrate W, and an annular peripheral wall portion 9 that extends upward from the contact portion 8 and is connected to the chucking plate 6. Yes. The peripheral wall part 9 is comprised by the outer peripheral wall part 9a and the inner peripheral wall part 9b arrange | positioned in the radial inside rather than the outer peripheral wall part 9a. The abutting portion 8 has a shape projecting in the horizontal direction from the peripheral wall portion 9 (the outer peripheral wall portion 9a and the inner peripheral wall portion 9b) toward the radially inner side. A portion of the abutting portion 8 located between the outer peripheral wall portion 9a and the inner peripheral wall portion 9b is provided with a cut 18 extending in the circumferential direction, whereby the abutting portion 8 has the outer peripheral wall portion 9a and the inner peripheral wall portion. 9b is divided into an outer contact portion 8a and an inner contact portion 8b.

  The outer peripheral wall portion 9 a and the inner peripheral wall portion 9 b extend upward along the outer peripheral surface and inner peripheral surface of the annular edge ring 4, and their upper ends are between the chucking plate 6 and the upper surface of the edge ring 4. It is sandwiched. The edge ring 4 is fixed to the chucking plate 6 with a screw (not shown), whereby the elastic film 7 is detachably attached to the chucking plate 6.

  In addition, the peripheral wall portion 9 has a stretchable portion 40 that can be stretched in the vertical direction, that is, in a direction substantially perpendicular to the substrate W. Specifically, the outer peripheral wall portion 9a is provided with a telescopic portion 40a that can be expanded and contracted in the vertical direction, and the inner peripheral wall portion 9b is provided with an elastic portion 40b that can be expanded and contracted in the vertical direction. By providing such expansion / contraction portions 40a and 40b on the outer peripheral wall portion 9a and the inner peripheral wall portion 9b, as shown in FIG. 3B, when the chucking plate 6 is raised, the chucking plate 6 The expansion / contraction portions 40a, 40b follow and expand in accordance with the movement of the outer peripheral wall portion 9a and the inner peripheral wall with the contact portions 8 (the outer contact portion 8a and the inner contact portion 8b) being in close contact with the substrate W. The part 9b can be greatly expanded and contracted.

  When the substrate W is held on the top ring 1, an annular pressure chamber 22 is formed inside the elastic film 7. The pressure chamber 22 is a sealed space defined by the edge ring 4, the elastic film 7, and the substrate W. In addition, a fluid passage 33 is formed which penetrates the inside of the edge ring 4 in the vertical direction and opens into the pressure chamber 22 at the lower surface thereof. The pressure chamber 22 is connected to the fluid passage 33 and the pressure controller P3. Connected to the compressed air source 120.

  On the other hand, as shown in FIG. 2, on the lower surface of the chucking plate 6, a pressure difference is provided in each part of the surface to be polished of the substrate W pressed against the polishing surface of the polishing pad 101, so that the polishing rate of each part of the surface to be polished is increased. An intermediate airbag 19 for attaching a gradient is fixed. The intermediate airbag 19 is annularly arranged inside the outer peripheral contact portion 15 in the radial direction.

  FIG. 4 is a partially enlarged cross-sectional view showing a detailed configuration of the intermediate airbag 19. As shown in FIG. 2A, the intermediate airbag 19 includes an elastic film 61 that contacts the upper surface of the substrate W and an airbag holder 62 that holds the elastic film 61 in a detachable manner. The airbag holder 62 is fixed to an annular groove 6a formed on the lower surface of the chucking plate 6 via a screw (not shown). The upper end of the elastic membrane 61 constituting the intermediate airbag 19 is sandwiched between the annular groove 6a and the airbag holder 62, whereby the elastic membrane 61 is detachably attached to the lower surface of the chucking plate 6. ing.

  Further, the elastic membrane 61 of the intermediate airbag 19 is formed from the base 61c of the flange 61a while forming an annular recess 63 between the intermediate contact portion 61b having the flange 61a protruding outward and the flange 61a. An extending portion 61d extending in the direction and a connecting portion 61e connected to the chucking plate 6 via the airbag holder 62 are provided. In addition, an opening 61f is formed at the center of the intermediate contact portion 61b. The collar 61a, the intermediate contact portion 61b, the connecting portion 61e, and the extending portion 61d are integrally formed of the same material having elasticity. Specifically, the elastic film 61 is formed of a rubber material excellent in strength and durability, such as ethylene propylene rubber (EPDM), polyurethane rubber, silicon rubber, etc., like the pressure sheet 13.

  With the configuration as described above, the substrate W is held in close contact with the intermediate contact portion 61b of the intermediate airbag 19 as shown in FIG. 4C, when the chucking plate 6 is lifted upward and polishing is performed, the pressure chamber 24 is formed in the intermediate airbag 19 by the elastic film 61 and the airbag holder 62. Is done. A fluid path 35 including a tube, a connector, and the like communicates with the pressure chamber 24. The pressure chamber 24 is connected to the compressed air source 120 via a pressure controller P5 disposed on the fluid path 35. .

  On the other hand, as shown in FIG. 2, the annular space defined by the elastic film 7, the elastic film 61, the substrate W, and the chucking plate 6 is configured as a pressure chamber 23. A fluid path 34 including a tube, a connector, and the like communicates with the pressure chamber 23, and the pressure chamber 23 is connected to the compressed air source 120 via a pressure controller P 4 disposed on the fluid path 34. .

  A circular space defined by the elastic film 61, the substrate W, and the chucking plate 6 is configured as a pressure chamber 25. A fluid path 36 including a tube, a connector and the like communicates with the pressure chamber 25, and the pressure chamber 25 is connected to the compressed air source 120 via a pressure controller P 6 disposed on the fluid path 36. The fluid passages 32, 33, 34, 35, and 36 are connected to the pressure controllers P <b> 2 to P <b> 6 via a rotary joint (not shown) provided at the upper end portion of the top ring head 110.

  In the pressure chamber 21 above the chucking plate 6 and the pressure chambers 22, 23, 24, and 25 below the chucking plate 6, the fluid paths 32, 33, 34, 35, and 36 communicated with the pressure chambers. The pressurized air from the pressure supply source 120 can be supplied through the air or can be released to atmospheric pressure. That is, pressure controllers P2 to P6 are installed on the fluid passages 32 to 36, and the pressures of the pressurized air supplied to the pressure chambers 21 to 25 can be adjusted by the pressure controllers P2 to P6. Moreover, as shown in FIG. 1, the control apparatus 30 which controls each pressure controller P2-P6 and the pressure controller P1 is installed, By this control apparatus 30, each pressure controller P1-P6 is collectively or separately. It can be operated. Thereby, the pressure inside each pressure chamber 21-25 can be controlled independently, respectively. The control device 30 and the pressure controllers P1 to P6 constitute a pressurized fluid supply pressure adjusting means. Although not shown in the figure, it is possible to supply a vacuum to each of the pressure chambers 21 to 25 by switching to the connection of the pressure supply source 120 and connecting a vacuum source.

  Further, as shown in FIGS. 1 and 2, the fluid passages 33, 34, 35, 36 connected to the pressure chambers 22, 23, 24, 25 pass through the fluid passages 33 to 36 to the respective pressure chambers. Sensors S1, S2, S3, and S4 for detecting the flow state of the air supplied to 22, 23, 24, and 25 are provided. Each sensor S1, S2, S3, S4 is comprised so that the pressure of the air which flows through each fluid path 33, 34, 35, 36 can be detected. Each sensor S1, S2, S3, S4 is configured to detect the flow velocity of the air flowing through each fluid path 33, 34, 35, 36. Furthermore, each sensor S1, S2, S3, S4 multiplies the flow area of each fluid path 33, 34, 35, 36 by detecting the flow velocity of the air flowing through each fluid path 33, 34, 35, 36. Thus, the flow rate of the air flowing through each fluid path 33, 34, 35, 36 can also be detected. This calculation may be performed inside the sensors S1, S2, S3, and S4, or may be performed by a calculation unit of a controller (not shown) that controls the substrate polishing apparatus. Good. The detection results of pressure, flow velocity, and flow rate by the sensors S1, S2, S3, and S4 are input to the control device 30.

  As will be described in detail below, a gap is formed in the seal portion between the elastic film 7 or the elastic film 61 and the substrate W (adhesion is not complete), so that the pressurized air can be discharged from any of the pressure chambers 22 to 25. When a leak occurs, the pressure, flow velocity, and flow rate of the pressurized air flowing into the pressure chamber change, and this can be detected by the sensors S1 to S4.

  Next, the film thickness measuring instrument 50 installed on the polishing table 100 will be described. FIG. 5A is a schematic plan view of the polishing table 100, and FIG. 5B is a schematic sectional side view of the polishing table 100. As shown in these drawings, a film thickness measuring instrument 50 for measuring the film thickness of an insulating film or a metal film formed on the surface to be polished of the substrate W is embedded in the polishing table 100. The film thickness measuring device 50 performs film thickness measurement during polishing (in-situ monitoring). Further, a light transmission window member 52 for transmitting light from the film thickness measuring device 50 is attached to the polishing pad 101 at a position corresponding to the film thickness measuring device 50. The translucent window member 52 is made of a material having high light transmittance, and is made of, for example, non-foamed polyurethane.

  FIG. 6 is a diagram showing a detailed configuration of the film thickness measuring instrument 50. As shown in the figure, the film thickness measuring instrument 50 includes a light source 54 that irradiates the surface to be polished of the substrate W with light having a wavelength in a predetermined range, a spectroscope 55 that splits the reflected light from the surface to be polished, And a CCD array 56 that captures the light separated by the spectroscope 55. Further, a cable 58 from the light source 54 of the film thickness measuring device 50 and the CCD array 56 passes through the polishing table 100 and is a rotary connector provided at the shaft end of the support shaft 100a of the polishing table 100 as shown in FIG. A controller (control unit) 60 is connected via 59. The controller 60 is connected to a display device (display) 62.

  In the film thickness measuring instrument 50 configured as described above, the light emitted from the light source 54 is reflected by the surface to be polished of the substrate W, and the reflected light is split by the spectroscope 55 and applied to the CCD array 56. The CCD array 56 captures the intensity (spectral reflectance) at a single or a plurality of wavelengths as image information or the like. The controller 60 analyzes the information (spectral reflectance) of the entire surface to be polished of the substrate W captured by the CCD array 56, whereby the film thickness at a specific point (measurement point) on the surface to be polished of the substrate W. To get to.

  The film thickness measuring instrument 50 can detect the amount of polishing of the substrate W by measuring the film thickness of the surface to be polished of the substrate W during the polishing process. Further, if the film thickness measuring device 50 is installed so that the entire surface to be polished of the substrate W can be scanned, film thickness data at each portion on the surface to be polished can be obtained, and local polishing unevenness can be grasped. be able to. Therefore, as will be described in detail below, the film thickness information obtained by the film thickness measuring device 50 is sent to the control device 30 via the controller 60, and the substrates by the pressure chambers 22 to 25 based on this film thickness information. By adjusting the distribution of the pressing force of W, polishing unevenness on the surface to be polished can be minimized.

  Next, the substrate polishing process in the substrate polishing apparatus having the above configuration will be described. First, when the substrate W is transferred to the top ring 1, the top ring 1 is positioned at a substrate transfer position (not shown). In this state, the pressure chamber 23 and / or the pressure chamber 24 are connected to a vacuum source via the fluid path 34 and / or the fluid path 35, and the pressure chamber 23 and / or the pressure chamber 24 are evacuated. Due to the suction action of the pressure chamber 23 and / or the pressure chamber 24, the substrate W is vacuum-sucked to the lower end surface of the top ring 1. At this time, the outer peripheral edge of the substrate W is held by the retainer ring 3 so that the substrate W does not jump out of the top ring 1. Then, the top ring 1 is moved with the substrate W adsorbed, and the top ring 1 is disposed above the polishing surface (polishing pad 101) of the polishing table 100.

  Next, the adsorption of the substrate W by the pressure chamber 23 and / or the pressure chamber 24 is released, and at the same time, the top ring air cylinder 111 connected to the top ring drive shaft 11 is operated, and the lower end of the top ring 1 is The retainer ring 3 is pressed against the upper surface of the polishing pad 101 of the polishing table 100 with a predetermined pressing force. Thereafter, pressurized air is supplied to the pressure chamber 21 to lower the chucking plate 6 and press the elastic film 7 of the outer peripheral contact portion 15 and the elastic film 61 of the intermediate airbag 19 against the substrate W. As a result, the elastic film 7 and the elastic film 61 are in close contact with the upper surface of the substrate W. In this state, pressurized air of a predetermined pressure is supplied to each of the pressure chambers 22 to 25 to raise the chucking plate 6. As a result, the elastic film 7 and the elastic film 61 are stretched following the ascent of the chucking plate 6, the pressurized air is sealed in the pressure chambers 22 to 25 which are sealed spaces, and the substrate W is attached to the polishing table 100. Pressed against the polishing surface 101.

  On the other hand, the polishing liquid Q is held in the polishing pad 101 by flowing the polishing liquid Q from the polishing liquid supply nozzle 102 in advance. In this state, the polishing table 100 and the top ring 1 rotate together, so that the polishing liquid Q is interposed between the surface to be polished (lower surface) of the substrate W and the polishing surface of the polishing pad 101. The surface to be polished is in sliding contact with the polishing surface of the polishing pad 101, and the substrate W is polished.

  Here, a case where pressurized air leaks from the pressure chambers 22 to 25 during the polishing process of the substrate W will be described. 7 to 9 are side views showing a simplified configuration of the above-described substrate polishing apparatus, and are diagrams for explaining a procedure for stopping the compressed air when it leaks. In FIGS. 7 to 9 and FIGS. 9 and 10 described below, the pressure chambers 21 and 23 and the fluid passages 32 and 34 are omitted for simplification.

  During the polishing process, if the adhesion of the elastic film 7 and the elastic film 61 to the substrate W is maintained in a complete state, the supply pressure of the pressurized air to the pressure chambers 22 to 25 is always maintained at a predetermined pressure. Therefore, the pressure and flow rate of the pressurized air do not change greatly even if there is some fluctuation. Therefore, during the polishing process, the pressure and flow rate of the pressurized air supplied to the pressure chambers 22 to 25 are monitored by the sensors S1 to S4. During polishing, a rotational force (rotational force) acts on the substrate W, so the elastic film 7 and the elastic film 61 must receive this rotational force. In a process with a large polishing load, even if there is no particular problem with the elastic film 7 or the elastic film 61, the elastic film 7 or the elastic film 61 is twisted by this rotational force, so that the adhesion with the substrate W is rarely lost. As a result, pressurized air leaks from the close contact area. FIG. 7 is a view showing a state in which the elastic film 7 or the elastic film 61 (the elastic film 7 in the drawing) is not completely adhered to the substrate W, and pressurized air leaks from that portion. As shown in the figure, when a leak of pressurized air occurs at the close contact portion, a change occurs in the pressure and flow rate of the pressurized air measured by the corresponding sensors S1 to S4. When changes in the pressure or flow rate of the pressurized air are measured, it is determined that pressurized air leaks from the corresponding pressure chambers 22-25. In the drawing, the pressurized fluid leaks from the pressure chamber 22 to the outside of the top ring 1, but the pressurized fluid leaks outside the top ring 1 as well as the elastic film 7 or the elastic film 61. In some cases, leakage may occur from one of the pressure chambers to an adjacent pressure chamber through a gap formed in the close contact portion between the substrate W and the substrate W.

  When the leakage of pressurized air is detected by the sensors S1 to S4, the controller 30 instructs the pressure controllers P3 to P6 from the controller 30 while continuing the polishing of the substrate W by the relative rotational movement of the polishing table 100 and the top ring 1. And the pressure of the pressurized air supplied to each pressure chamber 22-25 is temporarily reduced. In this case, even if the pressurized air leaks in any one of the pressure chambers 22 to 25, the pressure chambers 22 to 25 are placed in the pressure chambers 22 to 25 in order to keep the substrate W in a normal state. The pressure of the pressurized air supplied is reduced uniformly. Here, the supply pressure of the pressurized air to be reduced is set to a predetermined pressure that is not more than half of the supply pressure before the leak of the pressurized air occurs. Alternatively, each of the pressure controllers P3 to P6 can temporarily open the pressure chambers 22 to 25 to atmospheric pressure. As a result, as shown in FIG. 8, the elastic film 7 or the elastic film 61 that has been incompletely adhered to the upper surface of the substrate W is brought into close contact with the upper surface of the substrate W to return to a normal mounting state.

  Here, the time for temporarily reducing the supply pressure of the pressurized air is a predetermined time (in this embodiment, as an example, 5 seconds or 2 seconds), and when this predetermined time has elapsed, the pressure chambers 22 to 25 again. The supply pressure of the pressurized air supplied to is returned to the supply pressure before the occurrence of the leak. As a result, as shown in FIG. 9, the adhesion of the elastic film 7 or the elastic film 61 of the pressure chamber in which leakage has occurred to the substrate W returns to the complete state. Thereafter, the pressurized air from the pressure chamber is restored. Leakage stops. In addition, it can confirm that the close_contact | adherence of the elastic film 7 or the elastic film 61 returned to the perfect state by detection of the flow state of the pressurized air by sensors S1-S4.

  In the above, the substrate W in which the adhesion (seal) by the elastic film 7 or the elastic film 61 is incomplete is obtained by uniformly reducing the pressure of the pressurized air supplied to the pressure chambers 22 to 25. In addition, the case where the normal state is maintained again has been described, but in addition to this, only the supply pressure of the pressurized air supplied to the pressure chamber determined to be leaking is selectively reduced. Thus, it is possible to stop the leakage of pressurized air.

  Further, in the above, the substrate W in which the adhesion by the elastic film 7 or the elastic film 61 is incomplete is adjusted by adjusting the supply pressure of the pressurized air while maintaining the rotation speed of the polishing table 100 and the top ring 1. The case where the normal state is maintained again has been described, but the polishing table 100 and the top ring 1 are replaced with the means for adjusting the supply pressure of the pressurized air or together with the means for adjusting the supply pressure of the pressurized air. It is also possible to return the adhesion by the elastic film 7 or the elastic film 61 to the normal state again by using means for reducing the rotation speed (the number of rotations). That is, when a leak of pressurized air is detected, the rotational speeds of the polishing table 100 and the top ring 1 are temporarily reduced to a predetermined combination of rotational speeds that is lower than the current speed. As a result, the rotational force acting on the elastic film 7 or the elastic film 61 can be temporarily reduced by the rotation of the substrate W. Therefore, the substrate W in which the adhesion by the elastic film 7 or the elastic film 61 is incomplete. Can be kept in a normal state again, and the leakage of pressurized air can be stopped quickly.

  By the way, if the supply pressure of the pressurized air is temporarily reduced during the polishing process as described above, or the rotational speed of the polishing table 100 and the top ring 1 is reduced, the polishing pad (polishing surface) 101 of the substrate W is used. Since the pressing force to the substrate temporarily decreases and the amount of polishing decreases accordingly, the polishing amount of the substrate W becomes insufficient from the initial target polishing amount. For this reason, in the substrate polishing apparatus of the present embodiment, a measure for compensating for the shortage of the polishing amount is taken.

  As a measure for compensating for the shortage of the polishing amount, the time of the polishing process can be adjusted. In other words, the polishing time of the substrate W is extended by the controller (not shown) (polishing time control means) that controls the polishing time provided in the substrate polishing apparatus by the time during which the supply pressure of the pressurized air is temporarily reduced. In this way, if the time during which the supply pressure of the pressurized air is temporarily reduced is added to the time of the polishing step, the shortage of the polishing amount can be compensated. Further, in that case, by using the film thickness measuring device 50 installed in the polishing table 100, the amount of polishing that has been reduced until the leakage of pressurized air is stopped is accurately detected, and the shortage of the detected amount of polishing is detected. If the polishing time required to compensate for this is calculated and the polishing time is extended by that time, the shortage of the polishing amount can be compensated more accurately.

  Also, when there is a situation in which the time required for the polishing process cannot be increased when the insufficient polishing amount is compensated for by reducing the supply pressure of the pressurized air, the polishing time is temporarily not used. The supply pressure of the pressurized air when pressurizing again after the pressure reduction can be changed by changing the pressure to a pressure higher than the supply pressure before the pressure reduction. That is, based on the film thickness measurement data obtained by the film thickness measuring instrument 50, the supply pressure of the pressurized air is increased so as to compensate for the shortage of the polishing amount due to temporary pressure reduction during repressurization. This makes it possible to properly compensate for the shortage of polishing amount without extending the polishing time. For devices using Low-k materials, etc., there is an upper limit for the polishing pressure. If polishing is performed at a pressure exceeding this upper limit, the device may be destroyed. It is better to use the means for extending the polishing time described above, instead of the means for changing the subsequent polishing pressure to a high pressure.

  On the other hand, as described above, in the substrate polishing apparatus of this embodiment, the plurality of pressure chambers 22 to 25 are provided along the radial direction of the substrate W, and different pressures are applied to the plurality of pressure chambers 22 to 25, respectively. By supplying compressed air, high-precision polishing uniformity is achieved over the entire substrate W. However, in this case, if a leak of pressurized air occurs from any of the pressure chambers, if only the supply pressure of the pressurized air to the pressure chamber is reduced, the pressing force applied to the surface to be polished corresponding to the pressure chamber As a result, the amount of polishing of the portion becomes insufficient, and the amount of polishing of the substrate W may become uneven. FIG. 10 is a diagram showing the distribution of the polishing amount of the substrate W when the supply pressure of the pressurized fluid to some pressure chambers is temporarily reduced. As shown in the figure, the amount of polishing of the portion corresponding to the pressure chamber where the supply pressure of the pressurized air is reduced is reduced, so that the amount of polishing of the substrate W at the end of polishing is not uniform over the entire surface to be polished. Become.

  Therefore, in the substrate polishing apparatus of this embodiment, in order to eliminate the unevenness of the polishing amount of the substrate W, each of the surfaces to be polished is measured by the film thickness measuring instrument 50 installed on the polishing table 100 during the polishing process of the substrate W. The amount of polishing is calculated by measuring the film thickness of the portion. Then, the polishing amount data calculated based on the measurement data of the film thickness measuring instrument 50 is input to the control device 30, and each pressure chamber is compensated by the control device 30 so as to compensate for the insufficient polishing amount based on the data. The supply pressure of pressurized air to 22-25 is adjusted. In this way, even when the supply pressure of the pressurized air is temporarily reduced during the polishing process, uniform polishing can be achieved over the entire substrate W. FIG. 11 is a diagram showing the distribution of the polishing amount of the substrate W when the shortage of the polishing amount is compensated by using the feedback of the measurement data of the film thickness measuring instrument 50.

  As described above, if the measurement data of the polishing amount by the film thickness measuring device 50 is fed back to adjust the supply pressure of the pressurized air to the pressure chambers 22 to 25, the unevenness of the polishing amount on the surface to be polished is eliminated. Or the amount of polishing that is insufficient can be compensated. Therefore, it becomes possible to effectively remove the influence of the leak of pressurized air, and a more uniformly polished substrate can be obtained.

  On the other hand, when the polishing process of the substrate W by the substrate polishing apparatus is completed, the supply of pressurized air to the pressure chambers 22 to 25 is stopped, and each pressure chamber is opened to atmospheric pressure. Thereafter, by forming a negative pressure in the pressure chamber 23 and / or the pressure chamber 24, the substrate W is again vacuum-sucked on the lower end surface of the top ring 1. At this time, the pressure in the pressure chamber 21 is released to atmospheric pressure or negative pressure.

  After adsorbing the substrate W as described above, the entire top ring 1 is disposed at the substrate delivery position, and the vacuum adsorption by the pressure chamber 23 and / or the pressure chamber 24 is released. Then, a fluid (for example, a pressurized fluid or a mixture of nitrogen and pure water) is ejected from the fluid path 34 onto the substrate W to release the substrate W.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the technical idea described in the claims, the specification, and the drawings. Is possible. It should be noted that any shape, structure, and material not directly described in the specification and drawings are within the scope of the technical idea of the present invention as long as the effects and advantages of the present invention are exhibited. For example, the specific configuration of the pressure chambers 22 to 25 is not limited to that shown in the above embodiment, and any other configuration may be used as long as the substrate can be pressed with the supplied pressurized fluid. It may be configured as follows. In addition, the pressurized fluid supplied to the pressure chamber is not limited to the pressurized air shown in the above embodiment, and other types of gases or liquids can also be supplied. Moreover, in the said embodiment, although the thing which fixed the retainer ring 3 to the top ring main body 2 was shown as a structural example of the top ring 1, the board | substrate holding device of this invention is the top ring 1 shown in the said embodiment. In addition, for example, a retainer ring may be installed separately from the top ring main body, and the retainer ring and the top ring may be configured to move up and down independently.

It is a side view showing the whole substrate polisher composition provided with the substrate holding device concerning one embodiment of the present invention. It is side sectional drawing which shows a top ring. It is a partial expanded sectional view of a top ring, and is a figure which shows the detailed structure of an outer periphery contact part. It is a partial expanded sectional view of a top ring, and is a figure showing the detailed composition of an intermediate airbag. It is a figure which shows the film thickness measuring device installed in a grinding | polishing table, The figure (a) is a top view of a grinding | polishing table, The figure (b) is a schematic sectional side view of a grinding | polishing table. It is a figure for demonstrating the detailed structure of a film thickness measuring device. It is a sectional side view which shows schematic structure of a top ring, and is a figure which shows the state which the elastic film floated from the upper surface of the board | substrate during the grinding | polishing process. It is a sectional side view which shows schematic structure of a top ring, and is a figure which shows the state which the elastic film which floated from the upper surface of the board | substrate returned. It is a sectional side view which shows schematic structure of a top ring, and is a figure which shows the state which repressurized the pressure chamber after the elastic film returned. FIG. 2A is a side sectional view showing a schematic configuration of the top ring, and FIG. 2B is a diagram showing the distribution of the polishing amount on the surface to be polished of the substrate. FIG. 2A is a side sectional view showing a schematic configuration of the top ring, and FIG. 2B is a diagram showing the distribution of the polishing amount on the surface to be polished of the substrate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Top ring 2 Top ring main body 3 Retainer ring 4 Edge ring 5 Holder ring 6 Chucking plate 7 Elastic film 8 Contact part 9 Peripheral wall part 10 Universal joint part 11 Top ring drive shaft 12 Bearing ball 13 Pressure sheet 15 Outer periphery press part 18 cut 19 intermediate airbag 21-25 pressure chamber 30 control device 31-36 fluid path 50 film thickness measuring device 52 light transmitting window member 54 light source 55 spectroscope 56 CCD array 58 cable 59 rotary connector 60 controller 61 elastic membrane 62 air bag Holder 100 Polishing table 101 Polishing pad (polishing surface)
102 Polishing liquid supply nozzle 110 Top ring head 111 Top ring air cylinder 112 Rotating cylinder 113 Timing pulley 114 Top ring motor 115 Timing belt 116 Timing pulley 117 Top ring head shaft 120 Compressed air source

Claims (8)

A substrate holding member having a substrate holding surface for holding the substrate, a pressure chamber for pressing the substrate held on the substrate holding surface of the substrate holding member against the polishing surface, and a pressure fluid to be supplied to the pressure chamber In the substrate holding device provided with the pressurized fluid supply means,
A pressurized fluid leakage detecting means for detecting leakage of the pressurized fluid from the pressure chamber; and a pressurized fluid supply pressure adjusting means for adjusting a supply pressure of the pressurized fluid;
When the pressurized fluid leakage detecting means detects leakage of the pressurized fluid from the gap formed between the substrate and the pressure chamber, the pressurized fluid supply pressure adjusting means detects the pressurized fluid supply pressure. The substrate holding device is characterized in that leakage of the pressurized fluid is stopped by temporarily lowering the pressure. The substrate holding apparatus according to claim 1,
The pressure chamber includes a space defined by the elastic film and the substrate that are in close contact with the substrate included in the substrate holding member, and the pressurized fluid leakage detection means is a contact portion between the elastic film and the substrate. A substrate holding apparatus for detecting leakage of the pressurized fluid in The substrate holding apparatus according to claim 1 or 2,
The substrate holding apparatus, wherein the pressurized fluid leakage detecting means is a sensor that detects a leakage of the pressurized fluid by monitoring a flow state of the pressurized fluid flowing into the pressure chamber. The substrate holding apparatus according to any one of claims 1 to 3,
The supply pressure of the pressurized fluid lowered by the pressurized fluid supply pressure adjusting means is set to a pressure not more than half of the supply pressure of the pressurized fluid before the pressurized fluid leaks. A substrate holding device. The substrate holding apparatus according to any one of claims 1 to 4,
The substrate holding apparatus characterized in that the time for temporarily reducing the supply pressure of the pressurized fluid by the pressurized fluid supply pressure adjusting means is within 5 seconds. A polishing table having a polishing surface; and a substrate holding device that holds the substrate and presses the substrate against the polishing surface of the polishing table, the substrate and the polishing by rotation of the substrate holding device and rotation of the polishing table In a substrate polishing apparatus for polishing the substrate by relative movement of surfaces,
A substrate polishing apparatus comprising the substrate holding apparatus according to claim 1 as the substrate holding apparatus. The substrate polishing apparatus according to claim 6, wherein
A substrate polishing apparatus characterized in that when the pressurized fluid leakage detecting means of the substrate holding device detects leakage of pressurized fluid, the rotational speed of the substrate holding device and the polishing table is reduced. A polishing table having a polishing surface and the substrate holding device according to any one of claims 1 to 5, wherein a substrate held by the substrate holding device is pressed against the polishing surface of the polishing table, and the substrate In a substrate polishing method for polishing the substrate by relative movement of the polishing surface,
If leakage of the pressurized fluid is detected by the pressurized fluid leakage detecting means during the polishing process of the substrate, the pressurized fluid supply pressure adjusting means may stop the pressurized fluid without stopping the polishing process of the substrate. A substrate polishing method, wherein a supply pressure is temporarily reduced to stop leakage of the pressurized fluid.

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