JP2008106304A - Apparatus for forming thin film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for forming a uniform thin film. <P>SOLUTION: The apparatus for forming the thin film has an earth electrode placed in one side of a substrate to be thin-film-formed thereon in the film-forming chamber, and a high-frequency electrode placed in the other side. The high-frequency electrode comprises a main body part of the electrode, which is connected to a high-frequency power source and has a gas-introducing port for introducing a reaction gas therethrough, and a surface electrode part having a gas circulation hole in the plate face. The earth electrode and the-high frequency electrode generates plasma discharge in between them to form the thin film on the surface to be film formed of the substrate. The high-frequency electrode 4 is formed of a plurality of surface electrodes 40 that are formed by dividing the surface electrode part and of which the end parts are folded onto each other. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  In the present invention, plasma discharge is generated between a ground electrode and a high-frequency electrode arranged in a film forming chamber, and various thin films used for a thin film solar cell, a semiconductor, a photoreceptor, etc. on a film forming surface of a thin film forming substrate. In particular, the present invention relates to a thin film forming apparatus in which the high-frequency electrode is formed in a divided structure for easy handling.

  Thin film solar cells are considered to become the mainstream of future solar cells because they are thin and lightweight, can be manufactured at low cost, and are easy to enlarge. A thin film solar cell is, for example, a photoelectric film in which a first electrode (metal electrode), a photoelectric conversion layer made of a thin film semiconductor layer, and a second electrode (transparent electrode) are stacked on a flexible film substrate having electrical insulation. A plurality of conversion elements (or cells) are formed. By sequentially connecting the first electrode of a certain photoelectric conversion element and the second electrode of the adjacent photoelectric conversion element one after another, the first electrode of the first photoelectric conversion element and the second electrode of the last photoelectric conversion element A voltage necessary for the electrodes can be output.

  Thus, the thin film solar cell has a structure in which various thin films are laminated therein, and these thin films are usually formed using a thin film forming apparatus utilizing plasma discharge. Currently, there are mainly a roll-to-roll system or a stepping roll system as a method for forming a thin film on a flexible film substrate. Both types include substrate transport means using a plurality of rolls, and the roll-to-roll method is a method of continuously forming a film on a substrate that moves continuously in each film formation chamber, while the stepping roll method is In this method, a film is formed on a substrate that is simultaneously stopped in the film formation chamber, and the substrate portion after film formation is sent to the next film formation chamber. Among these, the stepping roll type thin film forming apparatus is excellent in that the characteristics of each thin film can be obtained stably because gas diffusion between adjacent film forming chambers can be prevented.

  FIG. 10 is a schematic configuration diagram of a conventional stepping roll type thin film forming apparatus. A thin film forming apparatus 100 shown in FIG. 10 includes an unwinder chamber 102 having a core 102a for unwinding a flexible film substrate 200 in a common vacuum chamber 101, and a metal electrode and photoelectric conversion on the flexible film substrate 200. A film forming chamber 103 as a plurality of independent processing spaces for forming thin films such as layers and transparent electrodes, and a winder chamber 104 having a core 104 a for winding the flexible film substrate 200 are provided. As the flexible film substrate 200 is unwound from the core 102a of the unwinder chamber 102 and wound around the core 104a of the winder chamber 104, a predetermined thin film is formed in each film forming chamber 103. Yes.

  In each film formation chamber 103, film formation is performed by sputtering film formation or plasma chemical vapor deposition (hereinafter referred to as “plasma CVD method”). For example, in the case of a stepping roll method in which a film is formed by plasma CVD, the film forming chamber 103 is opened, the flexible film substrate 200 is moved by one frame, the film forming chamber 103 is sealed, a source gas is introduced, Film formation is performed by repeating the steps of pressure control, discharge start, discharge end, source gas stop, gas drawing, and film formation chamber 103 opening.

  FIG. 11 and FIG. 12 are diagrams showing a configuration example of the film forming chamber, FIG. 11 is a schematic cross-sectional view of the film forming chamber when opened, and FIG. 12 is a schematic cross-sectional view of the film forming chamber when sealed. . However, in FIG. 11 and FIG. 12, the same elements as those shown in FIG. 10 are denoted by the same reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 11, the film formation chamber 103 shown in FIG. 10 has a box-shaped film formation chamber wall 103a and film formation chamber walls on both sides of the flexible film substrate 200 that is intermittently conveyed. The body 103b is disposed so as to face the body 103b. At the time of sealing, as shown in FIG. 12, independent processing spaces for the film forming unit chamber 103c and the film forming unit chamber 103d are formed with the flexible film substrate 200 interposed therebetween. A ground electrode 106 with a built-in heater 106a is disposed in the film forming unit chamber 103c, and a high-frequency electrode 105 connected to a power source 108 is disposed in the film forming unit chamber 103d. The film forming chamber 103 and the electrode mounting base 105 a of the high frequency electrode 105 are insulated by a seal 107.

  During film formation, the film formation chamber wall 103a moves from the position shown in FIG. 11 to the position shown in FIG. 12, and the ground electrode 106 presses the flexible film substrate 200 to open the film formation chamber wall 103b. It contacts the seal member 103e attached to the end face. Thereby, a film formation space 109 is formed between the flexible film substrate 200 and the high-frequency electrode 105.

  In each of the film forming chambers 103 configured as described above, by applying a high frequency voltage to the high frequency electrode 105, plasma is generated in the film forming space 109, and the source gas introduced from the introduction pipe (not shown) can be decomposed. A film is formed on the flexible film substrate 200.

FIG. 13 shows an electrode structure in a conventional general thin film forming apparatus. The same parts as those in FIG. 11 are denoted by the same reference numerals, and description of the same parts is omitted.
The high-frequency electrode 105 includes an electrode body 105a, a gas introduction port 105b, and a single electrode plate 105c serving as a shower electrode, also called a surface electrode. The reaction gas is introduced from the gas introduction port 105b and sprayed from the through hole of the electrode plate 105c to the flexible film substrate side.

  In the case where amorphous silicon (a-Si) is formed in the film formation chamber 103, for example, when the a-Si film adheres to the surface of the electrode plate 105c of the high-frequency electrode 105 and the film thickness becomes several tens of micrometers, the a The Si film peels off due to internal stress, becomes flakes, adheres to the flexible film substrate 200, and causes a pinhole or the like. For this reason, the surface of the electrode plate 105c is roughened by sandblasting, so that the maximum adhesion film thickness that allows stable film formation without peeling to the flexible film substrate 200 is extended to about 50 μm to 100 μm. Is called. When the maximum adhesion film thickness is reached, the inside of the common vacuum chamber 101 in FIG. 10 is opened to the atmosphere to replace the electrode plate 105c, and the removed electrode plate 105c is pickled using a cleaning device.

For this reason, the electrode plate 105c is capable of handling large-area thin film formation by the thin film forming apparatus 100, while the inner volume of the cleaning container of the cleaning apparatus is small, and handling properties at the time of attaching and removing the electrode plate 105c In order to improve this, as shown in FIGS. 14 to 16, it is divided into four pieces. Although it is divided into four sheets here, it may be divided into four sheets in consideration of the size of the electrode plate and the handleability. Further, in an apparatus for forming a thin film on a large-area substrate, each electrode plate 105c is fastened to the electrode body 105a with a plurality of fixing screws 105d in order to ensure electrical contact with the electrode body 105a. It has become. The reaction gas introduced from the gas inlet 105b shown in FIG. 14 is distributed in four directions by the electrode main body 105a, and is injected from the holes 105e of the respective electrode plates 105c shown in FIGS. However, in FIGS. 15 and 16, the hole 105e is illustrated in only one of the four electrode plates 105c, and the illustration of the remaining three is omitted (see Patent Document 1).
JP-A-2005-2423

  However, according to the thin film forming apparatus, by dividing the surface electrode into four, gaps are generated between the surface electrodes and the electrode main body due to elongation / strain due to heating, and the film forming gas may leak from there. It was. Since the gap is linear and has a larger cross-sectional area than the through hole of the surface electrode, the gap is relatively larger than the amount of gas passing through the through hole. As a result, there is a problem that the gas density distribution in the discharge space becomes large and the film thickness distribution becomes large. Further, in order to solve the above problems, if the number of screws connecting the electrode main body and the surface electrode is increased, there is a problem that the work time for replacing the surface electrode is increased and productivity is lowered.

  In addition, when the electrode plate is fixed to the film formation chamber only at the center of the electrode, it may not be parallel to the counter electrode during film formation due to distortion due to heating of the electrode, deformation during cleaning, or the like. This is more conspicuous as the size of the electrode plate is increased, and there is a problem that the film thickness distribution is deteriorated due to the difference between the distances between the electrodes at any part in the electrode surface.

  An object of this invention is to provide the thin film formation apparatus which solves the said subject and can produce | generate a uniform film-forming.

In order to solve the above problems, the present invention has a ground electrode on one side of a thin film forming substrate in a film forming chamber and a high-frequency electrode on the other side, the high-frequency electrode is connected to a high-frequency power source, and a reaction gas is introduced. The thin-film forming substrate is formed by plasma discharge between the ground electrode and the high-frequency electrode. The electrode main body has a gas inlet and the surface electrode has a gas flow hole on the plate surface. In the thin film forming apparatus for forming a thin film on the film surface, the surface electrode portion is divided and assembled in the high frequency electrode,
The divided surface electrode portion is configured to be detachable from the electrode main body portion, and a superposed portion is provided between the adjacent divided surface electrode portions, and the opposing electrode main body portion is provided through the superposed portions. It is fixed.
Further, in the present invention, the overlapping portion of each of the divided surface electrode portions is formed so as to straddle both edges of the opposing electrode main body portion, and the overlapping portion corresponds to the screw hole of the edge portion of the electrode main body portion. The mounting holes to be formed are formed in a zigzag shape, and are fastened together with the opposing electrode main body portions through the mounting holes.
Further, according to the present invention, the surface electrode parts are formed in a four-part structure in the vertical and horizontal directions, and the front and back sides of the adjacent divided surface electrode parts are reversed between the divided surface electrode parts formed in the vertical and horizontal parts. Stepped extensions that overlap so that they are coplanar with each other are formed, and mounting holes that match the screw holes at the edges of the opposing electrode body are formed on the divided surfaces. It was formed so as to match the front and back of the electrode part, and was screwed into the screw hole at the edge of the electrode body part in a zigzag manner using the mounting hole of the overlapped part where the extended part of the divided surface electrode part overlapped It is in.
Furthermore, the present invention is that a support column is intermittently interposed between the peripheral edge portion of the high-frequency electrode and the wall surface of the film forming chamber.

The present invention has the following effects.
According to claim 1, each of the surface electrode portions is divided into a plurality of portions, and overlapping portions are provided between the adjacent divided surface electrode portions, and are fixed to the opposing electrode main body portions via these overlapping portions. Therefore, gas leakage from between the divided surface electrode portions can be prevented. Therefore, a uniform thin film is formed on the thin film forming substrate. Furthermore, since the high-frequency division electrode is reduced in size and weight as compared with the conventional high-frequency electrode, the handleability can be improved and the cleaning device can be downsized.
According to claim 2, the overlapping portion of each divided surface electrode portion is formed so as to straddle both edges of the opposing electrode main body portion, and the overlapping portion is formed in the mounting hole of the edge portion of the electrode main body portion. Corresponding mounting holes are formed in a staggered manner and are fastened to the opposing electrode main body portions via these mounting holes, so that the number of mounting holes can be reduced and the number of man-hours for attaching and detaching operations can be reduced.
According to claim 3, the electrode main body portion and the surface electrode portion are formed in a four-part structure in the vertical and horizontal directions, and adjacent divided surface electrodes are provided between the divided surface electrode portions formed in the vertical and horizontal directions. Stepped extensions that overlap so that they are in the same plane position by reversing the front and back of the parts, and mounting to match these screw holes on the edge of the opposing electrode body A hole is formed so as to coincide with the front and back sides of the divided surface electrode part, and the screw of the edge of the electrode main body part is formed in a staggered manner using the mounting hole of the overlapping part where the extended parts of the divided surface electrode part are overlapped Since it is screwed into the hole, it is possible to use divided surface electrode portions formed in the same shape. By sharing the divided surface electrode in this way, the front and back of the divided surface electrode can be reversed and reused, so that the maintenance cycle of the divided surface electrode can be extended.
According to the fourth aspect, since the electrically insulating post is interposed between the peripheral edge of the high-frequency electrode and the wall surface of the film forming chamber, the high-frequency electrode can be securely fixed, and the electrode is caused by thermal distortion or deformation. A gap in the distance can be avoided.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic sectional view showing a film forming chamber when opened, and FIG. 2 is a front view showing a high-frequency electrode.

  1 and 2, reference numeral 1 denotes a film forming chamber of a thin film forming apparatus. The film forming chamber 1 sandwiches a thin film forming substrate 2 such as a flexible film substrate that is intermittently conveyed. The film chamber wall bodies 10a and 10b are arranged to face each other. Electrode mounting bases 11 and 12 are provided on the axis on the opposing surfaces on the inner surfaces of these film forming chamber walls 10a and 10b. A ground electrode 3 disposed on the non-film-forming surface side of the thin film forming substrate 2 is attached to the electrode attachment base 11, and a high frequency power source is connected to the other electrode attachment base 12 to apply a high voltage. A high frequency electrode 4 is attached to face the ground electrode 3. The ground electrode 3 and the high-frequency electrode 4 are disposed opposite to each other in the film forming chamber 1 with the thin film forming substrate 2 interposed therebetween. The film forming chamber wall 10b and the electrode mounting base 12 are electrically insulated by a seal 10c. However, when the film forming chamber wall 10b and the electrode mounting base 12 are at the same potential, the seal 10c may be conductive.

  The high-frequency electrode 4 is formed into a four-part structure by dividing the high-frequency electrode 4 vertically and horizontally as viewed from the ground electrode 3 side. Each of the high-frequency divided electrodes 4A, 4B, 4C, and 4D has a divided surface electrode portion (divided electrode plate portion) 40 as a surface electrode disposed on the front surface side, and an electrode main body portion 41 disposed on the back surface side. The insides of the high-frequency division electrodes 4A, 4B, 4C, and 4D are each formed hollow, and the hollow portion 42 is branched into four from a gas passage 12a formed in the electrode mounting base 12 to generate high-frequency waves. A reactive gas is introduced through each gas introduction port 41a formed in the wall surface of each electrode body 41 of the divided electrodes 4A, 4B, 4C, 4D. For the divided surface electrode portion 40, for example, an aluminum or stainless steel metal plate having a plurality of gas flow holes 43 having a diameter of 0.5 mm to 2 mm at intervals of 5 mm to 50 mm is used.

  The reaction gas is introduced from a gas introduction port 41a formed in the electrode main body 41, and is distributed to the hollow portions 42 of the four high-frequency divisional electrodes 4A, 4B, 4C, 4D by the electrode main body 41, and each division is performed. The gas flow holes 43 of the surface electrode portion 40 are jetted toward the film forming surface side of the thin film forming substrate 2 disposed on the ground electrode 3 side.

Between the peripheral edge of the high-frequency electrode 4 and the film forming chamber wall 10b, an insulating support column 5 having a thickness equivalent to that of the electrode mounting base 12 is provided, and each of the high-frequency divided electrodes 4A, 4B, 4C, 4D is maintained.
The support column 5 is attached to the inner wall surface of the film forming chamber wall 10b so as to correspond to the peripheral edge portion of the high-frequency electrode 4, and the high-frequency divisional electrodes 4A straddle the support column 5 and the electrode mounting base 12. , 4B, 4C, 4D are fixed by screws or the like. In addition, the support | pillar 5 is provided intermittently.

  1 to 4 show a first embodiment of the present invention. The four high-frequency divisional electrodes 4A, 4B, 4C, and 4D that constitute the high-frequency electrode are configured so that the end portions of the adjacent divided surface electrodes 40 are superposed. The divided surface electrode part 40 is provided with a stepped extension part 40a with a constant width from one corner part along two sides on both sides. The divided surface electrode portions 40 are formed with the extending portions 40a that overlap each other so as to be in the same plane position by reversing the front and back of the adjacent divided surface electrode portions 40.

The divided surface electrode portion 40 is formed with a screw hole 41b (formed at an edge portion of the electrode body portion 41 facing each other through a superposed portion 44 formed between the extended portions 40a with the adjacent divided surface electrode portion 40. 5 and 6), respectively.
The extending portion 40a is formed with mounting holes 40b that coincide with each other at regular intervals along the longitudinal direction. The distal end portion of the extending portion 40a provided on the corner portion 40c is formed so as to abut the corner portion 40c of the divided surface electrode portion 40 that is cut obliquely and disposed diagonally.

  In the first embodiment, the divided surface electrode portion 40 is screwed to the electrode main body portion 41 via screws (not shown). At this time, the corner portion 40c of the divided surface electrode portion 40 arranged on the other side of the diagonal line is arranged to face the divided surface electrode portion 40 arranged on one side of the diagonal line. Next, the adjacent divided surface electrode portions 40 are turned over, and the extending portions 40a of the adjacent divided surface electrode portions 40 are overlapped with each other so that the surfaces are flush with each other (see FIGS. 3 and 4). Overlay the main body 41. Then, the split surface electrode portion 40 is screwed by screwing a screw 45 into a screw hole 41b (see FIGS. 5 and 6) of the electrode main body portion 41 facing through the attachment hole 40b of the overlapping portion 44. Thus, the divided surface electrode portions 40 are screwed to the electrode body portions 41 facing each other, and are screwed to the adjacent electrode body portions 41. The high-frequency division electrodes 4A, 4B, 4C, 4D assembled in this way are fixed to the support column 5 and the electrode mounting base 12, respectively.

Therefore, according to the first embodiment, the split surface electrode portion 40 can prevent gas leakage from the overlapping portion of the split surface electrode portion 40 by overlapping the extending portions 40a with each other. A uniform thin film is formed on the forming substrate 2.
5 to 7 show the attachment of the divided surface electrode portion 40 to the electrode main body portion 41. For the assembly to the electrode main body portion 41, the attachment holes 40b of the divided surface electrode portion 40 are provided in the electrode main body portion 41. The screw hole 41b is screwed. In the portion where the extended portion 40a of the divided surface electrode portion 40 is overlapped, the mounting holes 40b and the screw holes 41b are formed in a staggered manner at positions corresponding to each other, whereby the number of the mounting holes 40b and the screw holes 41b in the overlapping portion is formed. Since the number of screws can be reduced, the number of work steps can be reduced.

FIGS. 8 to 9 show a second embodiment of the present invention. In this case, the steps of overlapping the adjacent divided surface electrode portions 40 so as to be in the same plane position by reversing the front and back of the adjacent divided surface electrode portions 40. A shaped extending portion 40a is formed.
In the extended portion 40a, the mounting holes 40b are formed in two rows at regular intervals along the longitudinal direction. For the assembly of the divided surface electrode portion 40, the mounting holes 40b in the first row and the mounting holes in the second row are provided. Since the so-called mounting holes 40b that use 40b alternately may be screwed in a zigzag pattern, the divided surface electrode portions 40 can be shared. These mounting holes 40b are formed so as to coincide with each other on the front and back sides of the divided surface electrode part 40, and electrode main body parts are formed in a staggered manner using the mounting holes 40b of the overlapping part where the extending parts 40a of the divided surface electrode part 40 are overlapped. It can be screwed into the screw hole 41b at the edge of 41.
By sharing the divided surface electrode 40 in this manner, the front and back of the divided surface electrode 40 can be reversed and reused, so that the maintenance cycle of the divided surface electrode 40 can be extended.
Note that the screw holes 41b of the electrode main body 41 may be formed in a zigzag shape and screwed alternately as shown in FIGS. 5 to 7A and 7B.

  Further, the support column 5 interposed between the electrode main body 41 and the film forming chamber wall 10b is made of an insulating material or a partly insulating material. Further, the screw connecting the film forming chamber wall 10b and the column 5 and the screw connecting the column 5 and the electrode main body 41 are different from each other and arranged so as not to contact each other. However, when the film forming chamber wall 10b is at the same potential as the electrode plate, it may be a conductive support or the two screws may be in contact with each other.

  As described above, according to the above-described embodiment, the high-frequency electrode 4 is divided into two parts vertically and horizontally when viewed from the ground electrode 3 side, so that it can be easily disassembled and assembled. In addition, the cleaning operation can be performed in a small container. Since the adjacent end portions of the divided surface electrode portion 40 are polymerized, gas leakage from the overlapping portion of the divided surface electrode portion 40 can be prevented, and a uniform thin film can be formed on the thin film forming substrate 2. it can.

  The present invention is not limited to the above embodiment. For example, in the above embodiment, the high frequency electrode 4 is divided into four to form the high frequency divided electrodes 4A, 4B, 4C, 4D. Not only four divisions but also multiple divisions such as two divisions or more can be performed. Since the electrode body 41 is joined by the extended portions 40a of the divided surface electrode portions 40 that overlap with each other, it may be formed in a four-part structure as in the case of the divided surface electrode part 40, or may be an integral structure. good. Further, the electrode mounting base 12 and the support columns 5 for supporting the high-frequency electrode 4 may have any shape, and the number and width of the support columns 5 can be arbitrarily set. The attachment method of the high-frequency electrode 4 to the electrode attachment base 12 and the column 5 may be any attachment method. In addition, it cannot be overemphasized that it can change suitably and can implement within the range which does not change the gist of the present invention.

It is sectional drawing which shows the film-forming chamber at the time of opening in the thin film forming apparatus of 1st Embodiment. It is a conceptual diagram which shows the high frequency electrode of FIG. It is a disassembled perspective view which shows the division | segmentation surface electrode part of the high frequency electrode of FIG. It is a disassembled perspective view which shows the superposition | polymerization part of the division | segmentation surface electrode part of FIG. It is a conceptual diagram which shows the staggered attachment hole of a high frequency division | segmentation electrode. FIG. 6 is an exploded perspective view of FIG. 5. The superposition | polymerization part of a high frequency division | segmentation electrode is shown, (a) is a top view, (b) is a right view of (a). It is a disassembled perspective view which shows the division | segmentation surface electrode part of the high frequency electrode of 2nd Embodiment. It is a disassembled perspective view which shows the superimposition part of the division | segmentation surface electrode part of FIG. It is the structure schematic of the conventional stepping roll type thin film forming apparatus. It is a schematic sectional drawing of the film-forming chamber at the time of opening. It is a schematic sectional drawing of the film-forming chamber at the time of sealing. It is sectional drawing which shows the thin film forming apparatus using the conventional high frequency electrode. It is sectional drawing which shows the conventional high frequency electrode. It is a top view of the conventional high frequency electrode. It is a perspective view of the conventional high frequency electrode.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Deposition chamber 2 Substrate for thin film formation 3 Ground electrode 4 High frequency electrode 5 Strut 11, 12 Electrode mounting base 40 Divided surface electrode portion 41 Electrode body portion 42 Hollow portion 43 Gas flow hole 44 Polymerization portion 45 Screw 4A, 4B, 4C, 4D High-frequency division electrode 12a Gas passage 40a Extension part 40b Mounting hole 40c Corner part 41a Gas introduction port 41b Screw hole

Claims (4)

An electrode main body having a gas introduction port in which a ground electrode is disposed on one side of the substrate for forming a thin film in the film formation chamber and a high-frequency electrode is disposed on the other side, the high-frequency electrode is connected to a high-frequency power source and a reaction gas is introduced; A thin film forming apparatus comprising a surface electrode portion having gas flow holes on a plate surface, and forming a thin film on the film forming surface of the thin film forming substrate by plasma discharge between the ground electrode and the high frequency electrode. In the high-frequency split electrode in which the surface electrode portion is divided into a plurality, and the electrode main body portion and the split surface electrode portion are integrally formed,
The divided surface electrode portion is configured to be detachable with respect to the electrode main body portion, and overlapping portions are provided between the adjacent divided surface electrode portions, respectively, and fixed to the electrode main body portion via these overlapping portions. A thin film forming apparatus.   The overlapping portions of the divided surface electrode portions are formed so as to straddle the edge portions of the electrode main body portions, and the mounting holes corresponding to the screw holes at the edge portions of the electrode main body portions are formed in a staggered manner in the overlapping portion. The thin film forming apparatus according to claim 1, wherein the thin film forming apparatus is fastened together with the opposing electrode main body through the mounting holes.   The electrode body part and the surface electrode part are formed in a four-part structure in the vertical and horizontal directions, and the front and back sides of the adjacent divided surface electrode parts are reversed between the divided surface electrode parts formed in the vertical and horizontal parts. In this way, the stepped extension portions that are superposed so as to be flush with each other are formed, and the attachment holes corresponding to the screw holes at the edges of the opposing electrode main body portions are formed in the extension surface portions. It was formed so as to coincide with the front and back of the part, and it was screwed into the screw hole at the edge of the electrode body part in a zigzag manner using the attachment hole of the overlapping part where the extension part of the divided surface electrode part was overlapped The thin film forming apparatus according to claim 1, wherein the apparatus is a thin film forming apparatus.   4. The thin film forming apparatus according to claim 1, wherein struts are intermittently interposed between a peripheral portion of the high-frequency electrode and a wall surface in the film forming chamber.

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