JP2008073611A - High pressure treating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enhance the efficiency of surface treatment by improving the replaceability of a high pressure fluid in the vicinity of the surface of a material to be treated and to enhance the degree of cleaning by evading generation of a dead space in a treating chamber. <P>SOLUTION: A partitioning plate 4 forms an upper stream chamber 12 and a lower stream chamber 13 by partitioning the treating chamber 11 to the upper side and the lower side. A substrate W is placed to the lower chamber 13 at a stationary state by feeding SCCO<SB>2</SB>to the upper stream chamber 12 from a pressure fluid feed part 2. The partitioning plate 4 is provided with a penetrating opening 41. A rotation driving part 5 rotates the partitioning plate 4 through a driving shaft 6 attached to the partitioning plate 4. When the partitioning plate 4 rotates through one rotation, a locus drawn by the lower side opening of the penetrating opening 41 covers the whole surface of the substrate W. Thereby, SCCO<SB>2</SB>is sprayed over the whole surface of the substrate W. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention provides a high-pressure treatment in which a predetermined surface treatment (cleaning treatment, rinsing treatment, drying treatment, etc.) is performed on the surface of an object to be treated such as a substrate using a high-pressure fluid, for example, a subcritical or supercritical high-pressure fluid. It relates to the device.

  When forming a pattern using a resist in the semiconductor manufacturing process, unnecessary resist and contaminants such as a resist that becomes unnecessary after pattern formation and an etching polymer that is generated during etching and remains on the substrate are removed from the substrate. The cleaning process for this is an essential process. In view of this, there has been proposed a high-pressure processing apparatus in which a high-pressure fluid is brought into contact with the surface of an object to be processed such as a substrate and the object to be processed is subjected to surface treatment such as cleaning or drying (see Patent Documents 1 to 3). ).

  For example, in the high-pressure processing apparatus described in Patent Documents 1 and 2, the surface treatment is performed by providing a rotating member above the substrate disposed in the processing chamber and agitating the high-pressure fluid in the processing chamber by rotating the rotating member. To improve uniformity and efficiency. Further, for example, in the high pressure processing apparatus described in Patent Document 3, a hollow rotary spraying member is provided above the substrate disposed in the processing chamber, and a high pressure fluid is supplied to the internal space of the rotary spraying member. The surface treatment is promoted by rotating the rotary spray member while spraying the high-pressure fluid from the spray port provided on the lower surface toward the substrate.

Japanese Patent Laying-Open No. 2003-51474 (paragraph 0032, FIG. 13) JP-A-11-87306 (paragraph 0014, FIG. 1) JP-T-2005-503019 (paragraph 0176, FIG. 26)

  However, in the conventional high-pressure processing apparatuses described in Patent Documents 1 and 2, no means for positively supplying a high-pressure fluid to a space sandwiched between the rotating member and the substrate is provided. Therefore, it is not always possible to increase the efficiency of the surface treatment. In particular, when the rotating member is disposed close to the substrate, the processing efficiency may be significantly reduced. That is, when such an arrangement structure is employed, the high-pressure fluid may stay in the space between the rotating member and the substrate due to the rotating operation of the rotating member. This means deterioration of the replaceability of the high-pressure fluid in the same space, which causes a reduction in processing efficiency.

  On the other hand, in the apparatus described in Patent Document 3, the rotating spray member is provided as described above, and the member is rotated while spraying high-pressure fluid from the member toward the substrate. Processing can be performed with higher efficiency than the apparatus. However, in the high-pressure processing apparatus described in Patent Document 3, a space other than the substrate side of the rotary spraying member, that is, the upper side and the outer peripheral surface side of the rotary spraying member are dead spaces. When such a dead space exists inside the processing chamber, the high-pressure fluid stays in that portion, and particles accumulate in this staying portion, resulting in a reduction in cleanliness. In particular, due to recent technological advances, the line width of circuits formed on semiconductor wafers has been reduced to the submicron level, so if particles (unnecessary substances such as dust) adhere to the circuits, the quality will deteriorate. The demand for cleanliness has become more and more severe due to the decrease in product yield.

  The present invention has been made in view of the above problems, and improves the efficiency of the surface treatment by improving the replaceability of the high-pressure fluid in the vicinity of the surface of the object to be processed, and avoids the occurrence of dead space in the processing chamber. An object of the present invention is to provide a high-pressure processing apparatus that can improve the cleanliness.

  A high-pressure treatment apparatus according to the present invention is a high-pressure treatment apparatus that performs a predetermined surface treatment using a high-pressure fluid on a surface of an object to be processed disposed in a treatment chamber provided in a pressure vessel, In order to achieve the above object, a plate member that forms an upstream chamber and a downstream chamber by partitioning the processing chamber upstream and downstream in the direction of the flow of the high-pressure fluid, high-pressure fluid supply means that supplies the high-pressure fluid to the upstream chamber, A rotation driving means for rotating the plate member about a rotation axis substantially parallel to the surface normal, and the object to be processed is disposed in the downstream chamber in a stationary state so that the surface faces the plate member. Is characterized in that a communication portion for communicating the upstream chamber and the downstream chamber is provided.

  According to the invention thus configured, the processing chamber is partitioned upstream and downstream by the plate member in the direction in which the high-pressure fluid flows to form the upstream chamber and the downstream chamber, the high-pressure fluid is supplied to the upstream chamber, and the downstream The object to be processed is disposed in the chamber so that the surface thereof faces the plate member in a stationary state. Since the plate member is provided with a communication portion that communicates the upstream chamber and the downstream chamber, the high-pressure fluid supplied to the upstream chamber is discharged toward the object to be processed through the communication portion. . Therefore, the replaceability of the high-pressure fluid on the surface of the object to be processed is good, and the efficiency of the surface treatment can be improved. Further, since the plate member is rotated around a rotation axis substantially parallel to the surface normal, the high-pressure fluid is sprayed on the surface of the object to be processed at a relative speed, and thus the surface treatment is further promoted. Further, since the upstream chamber and the downstream chamber are each formed by the plate member and the inner wall of the processing chamber, there is no room for forming a dead space in the processing chamber. Therefore, there is no portion where particles stay, and the cleanliness can be improved. Here, the plate member divides the processing chamber vertically, and the upstream chamber may be formed in the upper part of the processing chamber and the downstream chamber may be formed in the lower part of the processing chamber.

  Further, assuming that the communication portion is provided on the plate member so that the locus drawn by the opening on the processing object side of the communication portion by one rotation of the plate member covers the entire surface of the processing object, It is possible to spray the high-pressure fluid directly over the range.

  The communication portion is provided so as to include the center of rotation of the plate member, and a drive shaft for transmitting the driving force of the rotation driving means to the plate member is fixed to the plate member, and the end surface of the drive shaft In addition, a groove portion is formed so as to include the rotation center, and a plurality of protrusions are provided so as to sandwich the groove portion, and a communication portion provided at the rotation center of the plate member is provided. The drive shaft may be fixed to the plate member in contact with the surface of the removed plate member. According to the invention configured as described above, the high-pressure fluid can be directly sprayed on the surface of the object to be processed facing the rotation center of the plate member without being obstructed by the drive shaft.

  Further, if the groove is formed almost horizontally on the inner peripheral surface of the side wall of the pressure vessel and the outer peripheral end of the plate member enters the groove, the plate member causes the upstream chamber to And the downstream chamber can be more reliably partitioned. Further, a high-pressure fluid discharge port may be provided on the side wall of the pressure vessel corresponding to the downstream chamber.

  The “surface of the object to be processed” in the present invention means a surface to be subjected to surface treatment, and the “object to be processed” is, for example, a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, plasma. In the case of various substrates such as display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates, circuit patterns are formed on both main surfaces of the substrate. On the other hand, when it is necessary to perform surface treatment on the one main surface, the one main surface corresponds to the “surface of the object to be processed” of the present invention. Moreover, when it is necessary to perform surface treatment with respect to the other main surface, this other main surface is equivalent to the "surface of a to-be-processed object" of this invention. Of course, when it is necessary to perform surface treatment on both main surfaces like a double-sided mounting substrate, both main surfaces correspond to the “surface of the object to be processed” of the present invention.

  In addition, the “object to be processed” is not limited to a semiconductor substrate, and is such that a discontinuous or continuous layer of a different substance is formed or remains on various base materials such as metal, plastic, ceramics and the like. included.

  The “surface treatment” in the present invention is typically exemplified by a cleaning treatment for removing and removing contaminants from an object to which the contaminants are attached, such as a semiconductor substrate to which a resist is attached. In addition, the treatment for removing unnecessary substances from the surface of the object to be treated using a high-pressure fluid (for example, drying, rinsing, etc.) is not limited to the cleaning treatment, and all of the treatments are targets of the high-pressure treatment apparatus of the present invention. it can.

  In the present invention, the high-pressure fluid used is preferably carbon dioxide from the viewpoints of safety, cost, and easy supercritical state. In addition to carbon dioxide, water, ammonia, nitrous oxide, ethanol and the like can be used. The high pressure fluid is used because it has a high diffusion coefficient and can disperse dissolved pollutants in the medium. When the high pressure fluid is a supercritical fluid, it has an intermediate property between gas and liquid. The diffusion coefficient approaches the gas and can penetrate well into fine pattern portions. Also, the density of the high-pressure fluid is close to that of a liquid and can contain a much larger amount of auxiliary agent than gas.

  Here, the “high pressure fluid” in the present invention is a fluid having a pressure of 1 MPa or more. The high-pressure fluid that can be preferably used is a fluid in which high-density, high-solubility, low-viscosity, and high-diffusibility properties are observed, and more preferable is a fluid in a supercritical state or subcritical state. In order to use carbon dioxide as a supercritical fluid, the temperature may be 31.1 ° C. and 7.4 MPa or more. It is preferable to use a subcritical fluid or supercritical fluid (high pressure fluid) of 5 to 30 MPa for the rinsing process and the drying / development process after washing and washing, and performing these treatments under 7.4 to 30 MPa. Is more preferable.

  According to the high-pressure processing apparatus according to the present invention, the high-pressure fluid is discharged toward the object to be processed through the communicating portion of the plate member, so that the replaceability of the high-pressure fluid on the surface of the object to be processed is good. Therefore, the efficiency of the surface treatment can be improved. In addition, since there is no room for forming a dead space in the processing chamber, there is no portion where particles stay, and the cleanliness can be improved.

FIG. 1 is a diagram showing an embodiment of a high-pressure processing apparatus according to the present invention. The high-pressure processing apparatus introduces supercritical carbon dioxide (hereinafter referred to as “SCCO ₂ ”) into a processing chamber 11 formed inside the pressure vessel 1, and has a substantially circular semiconductor wafer held in the processing chamber 11. This is a device that performs surface treatment such as predetermined cleaning, rinsing, and drying on the substrate W. Hereinafter, the configuration and operation will be described in detail.

  The pressure vessel 1 is divided into a cylindrical upper vessel 1a and a lower vessel 1b. When the substrate W is loaded and unloaded, the pressure vessel 1 is separated to open the treatment chamber 11, and when performing surface treatment. Both are in close contact with each other so as to close the processing chamber 11. A sealing member 1c made of, for example, a fluororesin is provided at the contact portion between the upper container 1a and the lower container 1b so as to seal the processing chamber 11 over the entire circumference.

A circular thin plate-like partition plate 4 is disposed in the processing chamber 11. The partition plate 4 divides the upper space when the processing chamber 11 is viewed from the substrate W into a space close to the substrate W and a space away from the substrate W, that is, upstream and downstream in the direction in which the SCCO ₂ flows. 13 and corresponds to the “plate member” of the present invention. A groove 11b is formed almost horizontally on the inner peripheral surface 11a of the side wall 13a of the pressure vessel 1, and the outer peripheral end of the partition plate 4 is fitted in the groove 11b. The partition plate 4 is provided with a through hole 41 to be described later.

An inflow path 14 is provided in a portion corresponding to the upstream chamber 12 of the side wall 13 a of the pressure vessel 1, and the upstream chamber 12 communicates with the high-pressure fluid supply unit 2 through the inflow path 14. The high-pressure fluid supply unit 2 pumps SCCO ₂ toward the processing chamber 11 as the “high-pressure fluid” of the present invention. Further, an opening 15 a of the discharge path 15 is provided in a portion corresponding to the downstream chamber 13 of the side wall 13 a of the pressure vessel 1, and the downstream chamber 13 communicates with the storage unit 3 through the discharge path 15. . Further, the substrate W is disposed in the downstream chamber 13 so that the surface thereof faces the partition plate 4 in a stationary state.

As the storage unit 3, for example, a gas-liquid separation container or the like may be provided, and the SCCO ₂ is separated into a gas part and a liquid part using the gas-liquid separation container and discarded through separate paths. Alternatively, each component may be recovered (and purified if necessary) and reused. In addition, you may discharge | emit the gas component and liquid component which were isolate | separated by the gas-liquid separation container out of the system through a separate path | route. Moreover, in this embodiment, although the high-pressure processing apparatus is provided with the storage part 3, you may make it utilize the storage part provided outside the apparatus, for example, without an apparatus being provided with the storage part. In addition, in FIG. 1, the storage part 3 is shown in two places for convenience of explanation.

  A pressure regulating valve (not shown) is interposed between the downstream chamber 13 and the storage unit 3, and when the pressure regulating valve is opened based on a control command from a controller (not shown), the processing chamber 11 When the high pressure fluid or the like is discharged to the reservoir 3 while the pressure regulating valve is closed, the high pressure fluid can be confined in the processing chamber 11. It is also possible to adjust the pressure in the processing chamber 11 by controlling the opening and closing of the pressure regulating valve.

  The rotation drive unit 5 rotates the partition plate 4 about a rotation axis substantially parallel to the vertical direction. That is, a drive shaft 6 is attached to the partition plate 4. The drive shaft 6 extends outside the pressure vessel 1 through an axial passage provided in the pressure vessel 1, and is connected to the rotation drive unit 5. Yes. And it is comprised so that the partition plate 4 may rotate, if the rotation drive part 5 is driven based on the control command from a controller.

  Next, the partition plate 4 will be described in detail with reference to FIG. 2A is a perspective view of the drive shaft 6 attached to the partition plate 4, FIG. 2B is an exploded front view of the drive shaft 6 and the partition plate 4, and FIG. 2C is a partition with the drive shaft 6 removed. The plan view of the plate 4, (d) is a sectional view taken along the line DD of (c), (e) is a perspective view showing the end surface 6 a of the drive shaft 6, and (f) is provided on the partition plate 4 and the partition plate. It is a figure explaining the magnitude relationship between the through-hole 41 and the board | substrate W. FIG.

  The partition plate 4 is provided with a through hole 41 penetrating from the front surface to the back surface as the “communication portion” of the present invention. The through hole 41 is slit-shaped and is provided so as to pass through the center of the partition plate 4 (that is, along the diameter). The through hole 41 has a lower opening 41a on the downstream side and an upper opening 41b on the upstream side, and the upstream chamber 12 and the downstream chamber 13 are communicated with each other by communicating these openings 41a and 41b. When the diameter of the partition plate 4 is L1, the longitudinal dimension of the through hole 41 is L2, and the diameter of the substrate W is L3, L1> L2> L3. That is, when the partition plate 4 rotates once, the locus drawn by the lower opening 41a of the through hole 41 covers the entire surface of the substrate W.

  A groove 63 is formed on the end surface 6a of the drive shaft 6 so as to include the rotation center 6b, and two protrusions 61 and 62 are provided so as to sandwich the groove 63. The protrusions 61 and 62 are attached to the surface regions 4 a and 4 b except for the through holes 41 of the partition plate 4, and the drive shaft 6 is fixed to the partition plate 4.

Next, the operation of the high pressure processing apparatus configured as described above will be described. In a state where the upper container 1a and the lower container 1b are separated and the processing chamber 11 is opened, one substrate W, which is an object to be processed, is handled in the downstream chamber 13 of the processing chamber 11 by a handling device such as an industrial robot or a transport mechanism. When loaded, the upper container 1a and the lower container 1b are brought into close contact with each other, and the processing chamber 11 is closed to complete the processing preparation. Subsequently, when SCCO ₂ pumping from the high-pressure fluid supply unit 2 to the upstream chamber 12 of the processing chamber 11 is started, SCCO ₂ is pumped to the upstream chamber 12 of the processing chamber 11. At the same time as or after the start of SCCO ₂ pumping from the high-pressure fluid supply unit 2 to the processing chamber 11, the rotation driving unit 5 is driven to rotate the partition plate 4.

Since the partition plate 4 is provided with a through hole 41, the SCCO ₂ pumped to the upstream chamber 12 flows into the downstream chamber 13 through the through hole 41, and the processing pressure in the processing chamber 11 gradually increases. It rises. At this time, the processing pressure in the processing chamber 11 is maintained at a predetermined value (for example, 20 MPa) by controlling the opening and closing of the pressure regulating valve in accordance with an opening / closing command from the controller. The pressure adjustment by the opening / closing control is continued until the decompression process described later is completed.

As described above, the cleaning process starts by starting the SCCO ₂ feeding. At this time, the SCCO ₂ feeding is continuously performed. SCCO ₂ supplied to the upstream chamber 12 is discharged toward the substrate W through the through hole 41 of the partition plate 4. Therefore, the substitutability of SCCO _{2 on} the surface of the substrate W is good. Further, since the partition plate 4 is rotated, the SCCO ₂ is sprayed on the surface of the substrate W at a relative speed. In this way, SCCO ₂ is supplied to the downstream chamber 13, SCCO ₂ comes into contact with the surface of the substrate W, and unnecessary substances such as resist and resist residues attached to the substrate W are peeled and removed. In addition, SCCO ₂ accompanied by unnecessary substances is sent to the storage unit 3 through the discharge path 15.

When the cleaning process is completed, the SCCO ₂ pumping is stopped, and the rotation of the partition plate 4 is stopped. And the inside of the processing chamber 11 is returned to a normal pressure by controlling opening and closing of the pressure regulating valve. In this decompression process, the SCCO ₂ remaining in the processing chamber 11 becomes a gas and evaporates, so that the substrate W can be dried without causing defects such as spots on the surface of the substrate W. . Moreover, in recent years, a fine pattern is often formed on the surface of the substrate, and the problem that the fine pattern is destroyed during the drying process has been highlighted, but the above problem can be solved by using reduced pressure drying. Can do.

  When the processing chamber 11 returns to normal pressure, the processing chamber 11 is opened, and the substrate W that has been cleaned is unloaded by a handling device such as an industrial robot or a transport mechanism. Thus, a series of surface treatments, that is, cleaning treatment (resist stripping removal treatment) + drying treatment is completed. Then, when the next unprocessed substrate W is transferred, the above operation is repeated.

As described above, according to this embodiment, the processing chamber 11 is vertically divided by the partition plate 4 to form the upstream chamber 12 and the downstream chamber 13, SCCO ₂ is supplied to the upstream chamber 12, and the downstream chamber 13 is supplied to the downstream chamber 13. The board | substrate W is arrange | positioned so that the surface may oppose the partition plate 4 in a stationary state. Since the partition plate 4 is provided with a through hole 41 that allows the upstream chamber 12 and the downstream chamber 13 to communicate with each other, the SCCO ₂ supplied to the upstream chamber 12 passes through the through hole 41 toward the substrate W. Discharged. Therefore, the substituting property of SCCO _{2 on} the surface of the substrate W is good, and the efficiency of the surface treatment can be improved. Further, since the partition plate 4 is rotated around the rotation axis substantially parallel to the vertical direction by the rotation drive unit 5 via the drive shaft 6, the SCCO ₂ is sprayed on the surface of the substrate W at a relative speed. Processing can be facilitated.

  In addition, according to this embodiment, the upstream chamber 12 is formed by the partition plate 4 serving as the bottom plate and the inner wall of the processing chamber 11, and the downstream chamber 13 is formed of the partition plate 4 serving as the top plate and the inner wall of the processing chamber 11. Is formed by. As a result, there is no room for forming a dead space in the processing chamber 11. Therefore, there is no portion where particles stay, and the cleanliness can be improved.

Further, according to this embodiment, the through hole 41 is provided so as to pass through the center of the partition plate 4, and the dimension L2 of the through hole 41 is set to L2> L3 with respect to the diameter L3 of the substrate W. Therefore, when the partition plate 4 rotates once, the locus drawn by the lower opening 41a of the through hole 41 can cover the entire surface of the substrate W. As a result, SCCO ₂ can be sprayed over the entire surface of the substrate W.

Further, according to this embodiment, the groove portion 63 is formed in the end surface 6a of the drive shaft 6 so as to include the rotation center 6b, and the two convex portions 61 and 62 are provided so as to sandwich the groove portion 63. The convex portions 61 and 62 are respectively attached to the surface regions 4 a and 4 b excluding the through holes 41 of the partition plate 4, thereby fixing the drive shaft 6 to the partition plate 4. Therefore, the SCCO ₂ can be directly sprayed on the surface of the substrate W facing the rotation center of the partition plate 4 without being obstructed by the drive shaft 6.

  Further, according to this embodiment, the groove 11b is formed almost horizontally over the entire circumference 11a of the side wall 13a of the pressure vessel 1, and the outer peripheral end of the partition plate 4 is fitted into the groove 11b. Therefore, the processing chamber 11 can be reliably partitioned into the upstream chamber 12 and the downstream chamber 13.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above embodiment, the slit-shaped through hole 41 is provided in the partition plate 4, but the “communication portion” of the present invention is not limited to this. FIG. 3 is a view showing a modified form of the through hole provided in the partition plate 4. In the partition plate 4 of FIG. 3A, circular through holes 42 are alternately provided in two rows along the radius from the center 4c. Further, the partition plate 4 in FIG. 3B is provided with circular through-holes 43 radially from the center 4c along the radius. Further, the partition plate 4 of FIG. 3C is provided with a slit-like through hole 44 along the radius from the center 4c. 3A to 3C, when the partition plate 4 rotates once, the through holes 42 to 44 are provided so that the trajectory drawn by the lower opening covers the entire surface of the substrate W, respectively. Yes.

  Moreover, in the said embodiment, although the groove | channel 11b is provided in the inner peripheral surface 11a of the side wall 13a of the pressure vessel 1 substantially horizontally over the perimeter, and the outer peripheral end of the partition plate 4 fits in the groove | channel 11b, Not limited to. For example, as shown in FIG. 4, a groove may not be provided on the inner peripheral surface 11a of the side wall 13a of the pressure vessel 1, and a minute gap may be provided between the outer peripheral end of the partition plate 4 and the inner peripheral surface 11a. Good. Also in this form, the same effect as the above embodiment can be obtained.

In the above embodiment, SCCO using 2 _{(supercritical} carbon dioxide) alone, although running surface treatment is not limited thereto, using the processing fluid that has dissolved drug solution SCCO _2, surface treatment May be executed. In the above embodiment, the upstream chamber 12 supplies the SCCO _2, but are arranged the substrate W to the downstream chamber 13 may be upside down. That is, the upper chamber 12 may be disposed at the lower portion and the upper and lower portions may be reversed so that the downstream chamber 13 is disposed at the upper portion.

  Incidentally, as described above, in the high-pressure processing apparatus of the above-described embodiment, in order to seal the processing chamber 11, the sealing member 1c made of, for example, a fluororesin is provided around the contact portion between the upper container 1a and the lower container 1b. Are provided. Here, in the surface treatment using a high-pressure fluid, the temperature of the high-pressure fluid is often 60 ° C. or higher. If such a high temperature state continues, deterioration of the resin constituting the seal member 1c proceeds, and the replacement frequency of the seal member 1c must be increased. If it does so, the running cost of the sealing member 1c as a consumable will rise. Moreover, since the operation of the high-pressure processing apparatus must be stopped every time the seal member 1c is replaced, the operating rate of the apparatus is lowered. Therefore, it is conceivable to extend the life of the seal member 1c by cooling the vicinity of the seal member 1c.

  However, if the vicinity of the sealing member 1c is simply cooled, the temperature of the inner wall surface in the vicinity of the sealing member 1c is lowered, and the temperature distribution in the processing chamber 11 is deteriorated. That is, a spatial temperature difference occurs between the central portion of the processing chamber 11 and the vicinity of the seal member 1c. In general, in semiconductor wafer processes, the uniformity of temperature distribution greatly affects the process performance. Therefore, it is necessary to prevent the temperature distribution in the processing chamber 11 from being adversely affected by the cooling of the seal member 1c.

  Therefore, a configuration example in consideration of the above points will be described. FIG. 5 is a partially enlarged view of the pressure vessel 1. In FIG. 5, each of the upper container 1a and the lower container 1b includes extending portions 1d and 1e in which portions that contact each other extend toward the outer periphery. The extending portions 1d and 1e are provided with cooling water jackets 16 and 16 over the entire circumference corresponding to the seal member 1c. The cooling water jackets 16 and 16 are water passages embedded in the wall, and the cooling water circulates inside. Further, in the upper container 1a and the lower container 1b closer to the processing chamber 11 than the cooling water jackets 16 and 16, hot water jackets 17 and 17 through which hot water circulates correspond to the cooling water jackets 16 and 16, respectively. Is provided.

  Thus, according to the form of FIG. 5, since the sealing member 1c is cooled by the cooling water jackets 16 and 16, deterioration of the sealing member 1c can be prevented. Moreover, since the influence of the temperature drop by the cooling water jackets 16 and 16 is blocked by the hot water jackets 17 and 17, the uniformity of the temperature distribution in the processing chamber 11 can be maintained. Further, since the positions of the cooling water jackets 16 and 16 are farther from the inner peripheral surface 11a of the pressure vessel 1 by the extended portions 1d and 1e, the adverse effects on the processing chamber 11 due to the cooling water jackets 16 and 16 are alleviated. can do. Further, although the footprint of the pressure vessel 1 is increased by the extension portions 1d and 1e, there is an advantage that the internal shape of the processing chamber 11 can be maintained in the same shape as the apparatus of FIG.

  FIG. 6 is a partially enlarged view of the pressure vessel 1 showing another embodiment. In FIG. 6, the lower end peripheral part 13b of the upper container 1a is formed so as to expand from the inner peripheral surface 11a toward the outer peripheral side. And the sealing member 1c and the cooling water jackets 16 and 16 are provided over the perimeter on the immediate outer peripheral side of this lower end peripheral part 13b. Moreover, the opening 15a of the discharge path 15 is provided in the top | upper surface 13c of the lower end peripheral part 13b.

Thus, according to the form of FIG. 6, since the sealing member 1c is cooled by the cooling water jackets 16 and 16, the deterioration of the sealing member 1c can be prevented. Further, since the opening 15a of the discharge passage 15 is provided in the vicinity of the cooling water jackets 16 and 16, the SCCO ₂ flow in the processing chamber 11 is the upstream side of the substrate W and the downstream side of the cooling water jackets 16 and 16 is downstream. It can be. As a result, it is possible to prevent the low-temperature SCCO ₂ cooled by the cooling water jackets 16 and 16 from flowing back to the substrate W and lowering the temperature in the vicinity of the substrate W.

  FIG. 7 is a partially enlarged view of the pressure vessel 1 showing another embodiment. The form of FIG. 7 is provided with a fluid resistance portion in the form of FIG. That is, in FIG. 7, a fluid resistance portion 13c is provided in which the inner peripheral surface 11a side of the side wall 13a of the upper container 1a extends downward, and the fluid resistance portion 13c is provided with a fluid path 13d by a through hole. . That is, the fluid resistance portion 13c is like a lid that closes the lower end peripheral portion 13b, and the downstream chamber 13 and the lower end peripheral portion 13b are communicated with each other by the fluid path 13d in the fluid resistance portion 13c.

Thus, according to the form of FIG. 7, since the fluid resistance portion 13 c is provided on the downstream chamber 13 side of the lower end peripheral portion 13 b, the pressure of the lower end peripheral portion 13 b can be made lower than that of the downstream chamber 13. it can. Thereby, it is possible to prevent the low-temperature SCCO ₂ from flowing back to the substrate W more reliably. In addition, the form of the fluid resistance part 13c is not restricted to what is shown in FIG. That is, in FIG. 7, it has a plate shape with through-holes, but it may be made of, for example, a porous material or a mesh-like material. The point is that it is resistant to the flow of the fluid and communicates with the downstream chamber 13 and the lower edge portion 13b.

  In the above embodiment, the case where the processing chamber 11 is installed horizontally so as to process the substrate W while holding it horizontally is described. However, the present invention is not limited to this. For example, the processing chamber is installed in the vertical direction. Alternatively, it may be installed obliquely. In these cases, the partition plate may be rotated around a rotation axis substantially parallel to the surface normal.

  The present invention is applied to a high-pressure processing apparatus that performs surface treatment on a target object such as a substrate using a high-pressure fluid.

It is a figure showing one embodiment of the high-pressure processing device concerning this invention. (A) is a perspective view of the drive shaft attached to the partition plate, (b) is an exploded front view of the drive shaft and the partition plate, (c) is a plan view of the partition plate with the drive shaft removed, (d) ) Is a sectional view taken along the line DD of (c), (e) is a perspective view showing an end face of the drive shaft, and (f) is a diagram illustrating the size relationship between the partition plate, the through hole provided in the partition plate, and the substrate. FIG. It is a figure which shows the deformation | transformation form of a through-hole. It is a figure which shows the modification of a high pressure processing apparatus. It is the elements on larger scale which show the structural example of a pressure vessel. It is the elements on larger scale which show another structural example of a pressure vessel. It is the elements on larger scale which show another structural example of a pressure vessel.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Pressure vessel, 2 ... High pressure fluid supply part (high pressure fluid supply means), 4 ... Partition plate (plate member), 5 ... Rotation drive part (rotation drive means), 6 ... Drive shaft, 6a ... End surface of a drive shaft, 6b: Rotation center of drive shaft, 61, 62 ... Projection, 63 ... Groove, 11 ... Processing chamber, 11a ... Inner peripheral surface of side wall of pressure vessel, 11b ... Groove, 12 ... Upstream chamber, 13 ... Downstream chamber, 13a ... side wall of pressure vessel, 15a ... opening of discharge path (discharge port), 41 to 44 ... through hole (communication part), 41a ... lower side opening (object to be processed side), W ... substrate (object to be processed)

Claims (6)

In a high-pressure processing apparatus that performs a predetermined surface treatment using a high-pressure fluid on the surface of an object to be processed disposed in a processing chamber provided inside a pressure vessel,
A plate member that forms an upstream chamber and a downstream chamber by partitioning the processing chamber upstream and downstream in the direction of the flow of the high-pressure fluid;
High pressure fluid supply means for supplying the high pressure fluid to the upstream chamber;
Rotation driving means for rotating the plate member around a rotation axis substantially parallel to the surface normal,
The object to be processed is disposed in a stationary state in the downstream chamber so that the surface faces the plate member,
The high-pressure processing apparatus, wherein the plate member is provided with a communicating portion that communicates the upstream chamber and the downstream chamber.   2. The high-pressure processing apparatus according to claim 1, wherein the plate member divides the processing chamber up and down, the upstream chamber is formed in an upper portion of the processing chamber, and the downstream chamber is formed in a lower portion of the processing chamber. .   The said communication part is provided in the said plate member so that the locus | trajectory which the to-be-processed object side opening of the said communication part draws by one rotation of the said plate member may cover the whole surface of the said to-be-processed object. The high-pressure processing apparatus described. The communication portion is provided so as to include the rotation center of the plate member,
A driving shaft for transmitting the driving force of the rotation driving means to the plate member is fixed to the plate member,
A groove portion is formed on the end surface of the drive shaft so as to include the rotation center, and a plurality of convex portions are provided so as to sandwich the groove portion, and each of the convex portions is a rotation center of the plate member. The high-pressure processing apparatus according to claim 3, wherein the drive shaft is fixed to the plate member in contact with the surface of the plate member excluding the communication portion provided on the plate. On the inner peripheral surface of the side wall of the pressure vessel, a groove is drilled almost horizontally over the entire circumference,
The high-pressure processing apparatus according to any one of claims 1 to 4, wherein an outer peripheral end of the plate member enters the groove.   The high-pressure processing apparatus according to claim 1, wherein the high-pressure fluid discharge port is provided on a side wall of the pressure vessel corresponding to the downstream chamber.

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