JP2007329398A - Metal deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal deposition method capable of depositing a metal on the surface of a substrate in the atmosphere in nano-order precision without employing a chamber. <P>SOLUTION: The metal deposition method deposits a metal in a minute region that suits minute patterns 12 which are drawn on a photo mask 11. In the metal deposition method, a substrate 13 formed with an organic metal salt film on the surface thereof is disposed in the proximity of a patterned surface of the photo mask 11 having previously formed minute patterns 12. Light is irradiated to the photo mask 11, and near-field light is generated in a local region suiting the minute patterns 12 formed on the patterned surface based on the irradiated light. The metal is discomposed by exposing the organic metal salt film, which is disposed in the proximity of the patterned surface, to the generated near-field light. Then, the discomposed metal is deposited on the substrate 13. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a metal deposition method suitable for depositing a metal on the surface of a substrate with a nano-order accuracy in the air.

  In recent years, the degree of integration has progressed from the advent of integrated circuits (ICs) to large-scale integrated circuits (LSIs), further restricting the design dimensions of circuit patterns, and research into microfabrication in semiconductor manufacturing processes It is actively done.

  Optical lithography is a means of such microfabrication. A resist film is formed on the surface of a substrate such as a silicon oxide film, and the pattern is transferred by exposure through a mask on which an integrated circuit pattern is drawn. The substrate is subjected to processing such as etching based on the resist pattern obtained by developing the substrate.

  By the way, with the recent increase in capacity of optical information communication, it is necessary to form a nanometer-sized integrated circuit pattern in order to achieve higher integration and higher density of semiconductor devices.

  For this reason, conventionally, the used photoresist has almost sensitivity by actively applying a non-adiabatic near-field light reaction (for example, see Non-Patent Document 1) that is expressed only by near-field light to photolithography. There has been proposed a fine patterning method having a wavelength of ¼ to ５ of a wavelength using a non-wavelength light source (see, for example, Non-Patent Documents 2 and 3).

By the way, in order to deposit metal on the substrate while performing the above-described patterning, it is necessary to place the substrate in the chamber and cause a non-adiabatic photochemical reaction using a near-field optical probe or the like. That is, every time metal is deposited on the substrate, gas must be injected into the chamber, the internal pressure and temperature of the chamber must be controlled, and the reaction must proceed for a predetermined time. There is also a problem that the time required for the thin film preparation is prolonged.
T. Kawazoe, Y. Yamamoto, and M. Ohtsu, Appl. Phys. Lett., 79, pp. 1184 (2001). Ryuichi Haga, Tadashi Kawazoe, Motoichi Otsu et al., 2004 Spring Applied Physics Society 29p-G-2 Tadashi Kawazoe, Hiroki Yonemitsu, Kenji Yoshida, Motoichi Otsu, 2004 Autumn Society of Applied Physics 2p-R-18

  For this reason, the present invention has been devised in view of the above-described problems, and a metal capable of depositing metal with a nano-order accuracy in the atmosphere on the substrate surface without using a chamber. An object is to provide a deposition method.

  The metal deposition method according to the present invention is a metal deposition method in which metal is deposited on a minute region corresponding to a fine pattern drawn on a photomask. A substrate on which an organic metal salt film is formed is placed in close proximity, light is irradiated onto the photomask, and near-field light is applied to a local region corresponding to a fine pattern formed on the patterning surface based on the irradiated light. Generating an organic metal salt film exposed to the patterning surface by the generated near-field light to decompose the metal, and depositing the decomposed metal on the substrate. .

  At this time, you may make it comprise the said organometallic salt with Zn-acetylacetonate.

  In the present invention having the above-described configuration, it is possible to deposit a metal in the atmosphere based on the above mechanism without using a chamber, so that the working efficiency is improved and the time required for thin film production is also increased. It is possible to shorten the time. It is also possible to deposit metal on the surface of the substrate with a nano-order accuracy in the air.

  Hereinafter, as a best mode for carrying out the present invention, a metal deposition method capable of depositing metal in the air with nano-order accuracy will be described in detail with reference to the drawings.

  FIG. 1 shows the configuration of an apparatus 1 for carrying out a metal deposition method to which the present invention is applied. This apparatus 1 selectively deposits metal on a minute region on a substrate 13 corresponding to a minute pattern 12 previously formed on a glass-like photomask 11.

  First, as shown in FIG. 1, an optically inactive organic metal salt film 14 is applied on a substrate 13 made of a material such as sapphire. When this film 14 is applied, for example, it may be dissolved in a solvent (water, alcohol, etc.) and applied onto the substrate 13 and then dried. Next, the fine pattern 12 surface of the photomask 11 is brought close to the film 14. Next, the photomask 11 is irradiated with light from an unillustrated Hg lamp.

  As a result, near-field light exudes from the edge portion of the fine pattern 12 formed on the surface based on the irradiated light. The film 14 can be exposed by the near-field light that has exuded from the edge portion. Since the film 14 is optically inactive with respect to the light irradiated from the Hg lamp, it does not react particularly to this, and it reacts only with the near-field light that has exuded. As a result, the film 14 can be selectively exposed in the local region corresponding to the edge portion in the fine pattern 12.

  In the local region exposed in this film 14, decomposition proceeds and metal in the organometallic salt appears. As a result, the metal 15 is deposited on a nanometer-sized local region from which the near-field light has exuded (FIG. 2).

  In the present invention, Zn-acetylacetonate may be applied to the organometallic salt as the film 14. This makes it possible to deposit Zn as the metal 15 in the local region. Two groups of acetylacetonate are bonded to a divalent metal, but the method of the corresponding patent can be applied to an organic metal film that is stable in the atmosphere.

  In the example described above, the case of depositing Zn has been described as an example. However, the present invention is not limited to such a case, and any other metal can be deposited on the substrate in the same manner. At this time, not only the metal is decomposed by the leached near-field light but also a mechanism such as compound generation may be used.

  Further, in the case where decomposition and generation of the substrate 13 itself can be expected by the exuded near-field light, it may be omitted to apply a reactive material such as the film 14 on the surface.

  In particular, in the present invention, it is possible to deposit metal in the atmosphere based on the above mechanism without using a chamber, so that the working efficiency is improved and the time required for thin film production is shortened. It becomes possible. It is also possible to deposit metal on the surface of the substrate with a nano-order accuracy in the air.

  Note that the metal deposition method according to the present invention can also be applied as a method for producing a microelectrode or a method for producing a nanostructure. The metal deposition method according to the present invention can also be applied as a method for producing a microelectrode on a metal complex that is attracting attention in organic EL, organic conductors, and the like.

It is a figure which shows the structure of the apparatus for enforcing the metal deposition method to which this invention is applied. It is a figure for demonstrating the effect of the metal deposition method to which this invention is applied.

Explanation of symbols

1 Device 11 Photomask 12 Fine Pattern 13 Substrate 14 Film

Claims (3)

In a metal deposition method of depositing metal on a minute region corresponding to a fine pattern drawn on a photomask,
A substrate having an organic metal salt film formed on the surface is disposed close to a patterning surface on which a fine pattern in a photomask is previously formed,
Irradiate the photomask with light,
Generate near-field light in a local region corresponding to a fine pattern formed on the patterning surface based on the irradiated light,
The metal is decomposed by exposing the organometallic salt film close to the patterning surface by the generated near-field light,
A metal deposition method comprising depositing the decomposed metal on the substrate. The metal deposition method according to claim 1, wherein the metal deposition is performed in the atmosphere. The metal deposition method according to claim 1, wherein the organometallic salt is Zn-acetylacetonate.

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