JP2007324220A - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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JP2007324220A
JP2007324220A JP2006150312A JP2006150312A JP2007324220A JP 2007324220 A JP2007324220 A JP 2007324220A JP 2006150312 A JP2006150312 A JP 2006150312A JP 2006150312 A JP2006150312 A JP 2006150312A JP 2007324220 A JP2007324220 A JP 2007324220A
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light
translucent
emitting element
light emitting
sealing member
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Tasuku Kusaka
翼 日下
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

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Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device which is capable of realizing an improvement in light extraction efficiency, preventing a decrease in light emission efficiency, and being protected against thermal deterioration. <P>SOLUTION: The semiconductor device 1A is equipped with a wiring substrate 2 with a recess 2a; a light emitting element 3 that is housed in the recess 2a and emits light; and a transparent sealing member 4 which contains a phosphor 4a that is provided in the recess 2a so as to seal up the light emitting element 3 and converts the wavelength of light emitted from the light emitting element 3, and a roughened discharge surface 4b that discharges light emitted from the light emitting element 3. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、発光素子を備える光半導体装置に関する。   The present invention relates to an optical semiconductor device including a light emitting element.

光半導体装置は、照明や表示装置等の様々な装置の光源として広い分野で用いられている。この光半導体装置としては、発光素子により放射された光と、その光により励起された蛍光体により放射された光とを併せて白色光等を得る光半導体装置が提案されている（例えば、特許文献１参照）。   Optical semiconductor devices are used in a wide range of fields as light sources for various devices such as lighting and display devices. As this optical semiconductor device, there has been proposed an optical semiconductor device that obtains white light or the like by combining light emitted by a light emitting element and light emitted by a phosphor excited by the light (for example, a patent) Reference 1).

このような光半導体装置は、発光ダイオード等の発光素子と、その発光素子を収容する凹部を有する配線基板とを備えている。その凹部には、発光素子を封止する透光封止部材が設けられている。この透光封止部材は、粒子状の蛍光体を混合した透光性樹脂材料により形成されている。
特開２００５−１３６００６号公報 Such an optical semiconductor device includes a light emitting element such as a light emitting diode, and a wiring board having a recess for accommodating the light emitting element. A translucent sealing member that seals the light emitting element is provided in the recess. This translucent sealing member is formed of a translucent resin material in which particulate phosphors are mixed.
JP 2005-136006 A

しかしながら、前述の光半導体装置では、発光素子により放射された光が透光封止部材から大気に放出される際、例えば、透光封止部材の界面まで達した光の５０％が透光封止部材から大気（空気層）に放出されないため、透光封止部材から大気への光の取り出し効率が十分でない。この原因は、透光封止部材と大気との屈折率差によりそれらの界面で光の全反射が発生するためである。   However, in the above-described optical semiconductor device, when the light emitted from the light emitting element is emitted from the translucent sealing member to the atmosphere, for example, 50% of the light reaching the interface of the translucent sealing member is translucent. Since it is not emitted from the stop member to the atmosphere (air layer), the light extraction efficiency from the translucent sealing member to the atmosphere is not sufficient. This is because the total reflection of light occurs at the interface due to the difference in refractive index between the light-transmitting sealing member and the atmosphere.

さらに、大気に放出されなかった光が熱として変換されるため、その熱により光半導体装置の温度が上昇し、発光素子や蛍光体の発光効率が低下してしまう。加えて、透光封止部材の熱劣化も発生してしまう。   Furthermore, since the light that has not been emitted to the atmosphere is converted as heat, the temperature of the optical semiconductor device rises due to the heat, and the light emission efficiency of the light emitting element and phosphor decreases. In addition, thermal degradation of the translucent sealing member also occurs.

本発明は、上記に鑑みてなされたものであり、その目的は、光の取り出し効率の向上を実現し、発光効率の低下及び熱劣化を防止することができる光半導体装置を提供することである。   The present invention has been made in view of the above, and an object of the present invention is to provide an optical semiconductor device capable of realizing improvement in light extraction efficiency and preventing reduction in light emission efficiency and thermal deterioration. .

本発明の実施の形態に係る第１の特徴は、光半導体装置において、凹部を有する配線基板と、凹部に収容され、光を放射する発光素子と、発光素子を封止するように凹部に設けられ、発光素子から放射された光の波長を変換する蛍光体を含有し、発光素子から放射された光を放出する面であって粗面化された放出面を有する透光封止部材とを備えることである。   A first feature according to an embodiment of the present invention is that, in an optical semiconductor device, a wiring board having a recess, a light emitting element housed in the recess and emitting light, and provided in the recess so as to seal the light emitting element. A translucent sealing member containing a phosphor that converts the wavelength of light emitted from the light emitting element and having a roughened emitting surface that emits light emitted from the light emitting element. It is to prepare.

本発明の実施の形態に係る第２の特徴は、光半導体装置において、凹部を有する配線基板と、凹部に収容され、光を放射する発光素子と、発光素子を封止するように凹部に設けられ、発光素子から放射された光の波長を変換する蛍光体を含有し、発光素子から放射された光を放出する放出面を有する透光封止部材と、透光封止部材の放出面上に設けられ、放出面から放出されて入射した光を出射する面であって粗面化された出射面を有する透光部材とを備えることである。   A second feature according to the embodiment of the present invention is that in an optical semiconductor device, a wiring board having a recess, a light emitting element housed in the recess and emitting light, and provided in the recess so as to seal the light emitting element. A translucent sealing member that includes a phosphor that converts the wavelength of light emitted from the light emitting element and has an emission surface that emits light emitted from the light emitting element, and an emission surface of the translucent sealing member And a translucent member having a roughened emission surface that emits incident light emitted from the emission surface.

本発明によれば、光の取り出し効率の向上を実現し、発光効率の低下及び熱劣化を防止することができる。   According to the present invention, it is possible to improve the light extraction efficiency and prevent the light emission efficiency from being lowered and the heat deterioration.

（第１の実施の形態）
本発明の第１の実施の形態について図１及び図２を参照して説明する。 (First embodiment)
A first embodiment of the present invention will be described with reference to FIGS.

図１及び図２に示すように、本発明の第１の実施の形態に係る光半導体装置１Ａは、凹部２ａを有する配線基板２と、凹部２ａに収容され、光を放射する発光素子３と、その発光素子３を封止するように凹部２ａに設けられ、発光素子３から放射された光の波長を変換する蛍光体４ａを含有し、発光素子３から放射された光を放出する面であって粗面化された放出面４ｂを有する透光封止部材４と、凹部２ａの底面から外部まで伸びるように形成され、発光素子３にそれぞれ接続された一対のリード部５、６とを備えている。   As shown in FIGS. 1 and 2, an optical semiconductor device 1A according to the first embodiment of the present invention includes a wiring board 2 having a recess 2a, and a light emitting element 3 that is accommodated in the recess 2a and emits light. The phosphor 2a is provided in the recess 2a so as to seal the light emitting element 3 and converts the wavelength of the light emitted from the light emitting element 3, and emits the light emitted from the light emitting element 3. A transparent sealing member 4 having a roughened emission surface 4b, and a pair of lead portions 5 and 6 formed so as to extend from the bottom surface of the recess 2a to the outside and connected to the light emitting element 3, respectively. I have.

配線基板２は、その略中央に位置付けて設けられた凹部２ａと、その凹部２ａの側面から外部まで貫通する貫通部２ｂとを有している。凹部２ａは、例えばカップ形状、すなわち逆円錐台形状に形成されており、その内部に発光素子３を収容する収容部である。この凹部２ａの側面は、凹部２ａの底面から外部に向かって傾斜しており、発光素子３により放射された光を透光封止部材４の放出面４ｂに向けて反射する反射面として機能する。また、貫通部２ｂは、凹部２ａの底面に略平行に形成されており、リード部５、６を引き出すための貫通孔である。この貫通部２ｂには、リード部５、６が挿入されて設けられている。このような配線基板２は、例えば熱可塑性樹脂等のモールド樹脂により形成されている。   The wiring board 2 has a concave portion 2a provided at the approximate center thereof, and a through portion 2b penetrating from the side surface of the concave portion 2a to the outside. The concave portion 2a is formed in, for example, a cup shape, that is, an inverted truncated cone shape, and is a housing portion that houses the light emitting element 3 therein. The side surface of the recess 2 a is inclined outward from the bottom surface of the recess 2 a and functions as a reflection surface that reflects the light emitted by the light emitting element 3 toward the emission surface 4 b of the translucent sealing member 4. . The through portion 2b is a through hole that is formed substantially parallel to the bottom surface of the concave portion 2a and leads out the lead portions 5 and 6. Lead portions 5 and 6 are inserted into the penetrating portion 2b. Such a wiring board 2 is formed of a mold resin such as a thermoplastic resin.

発光素子３は、凹部２ａの底面の略中央に位置付けられてリード部５上に設けられている。この発光素子３の底面電極（図２中の下面）は、例えば銀ペースト等の接合部材７（図２参照）によりリード部５に接合されて電気的に接続されている。また、発光素子３の表面電極（図２中の上面）は、例えば金ワイヤ等の接続部材８によりリード部６に電気的に接続されている。なお、発光素子３としては、例えば発光ダイオード（ＬＥＤ）等を用いる。   The light emitting element 3 is provided on the lead portion 5 so as to be positioned substantially at the center of the bottom surface of the recess 2a. The bottom electrode (the lower surface in FIG. 2) of the light emitting element 3 is joined and electrically connected to the lead part 5 by a joining member 7 (see FIG. 2) such as a silver paste. Moreover, the surface electrode (upper surface in FIG. 2) of the light emitting element 3 is electrically connected to the lead portion 6 by a connecting member 8 such as a gold wire. For example, a light emitting diode (LED) is used as the light emitting element 3.

透光封止部材４は、凹部２ａに設けられて発光素子３を封止する封止部材であり、粒子状の蛍光体４ａを複数有している。この透光封止部材４は、例えば粒子状の蛍光体４ａを混合した蛍光体混合樹脂等の透光性樹脂材料により形成されている。透光性樹脂材料としては、例えば、熱硬化性シリコーン樹脂等を用いる。蛍光体４ａは、発光素子３の光の波長よりも長い波長を有する光を放出する。この蛍光体４ａとしては、例えば青色の光を放射する発光素子３を用いた場合、黄色の蛍光体を用いたり、黄色の蛍光体及び赤色の蛍光体の両方を用いたりする。   The translucent sealing member 4 is a sealing member that is provided in the recess 2a and seals the light emitting element 3, and includes a plurality of particulate phosphors 4a. The translucent sealing member 4 is formed of a translucent resin material such as a phosphor mixed resin in which particulate phosphors 4a are mixed. As the translucent resin material, for example, a thermosetting silicone resin or the like is used. The phosphor 4 a emits light having a wavelength longer than the wavelength of light of the light emitting element 3. As the phosphor 4a, for example, when the light-emitting element 3 that emits blue light is used, a yellow phosphor or both a yellow phosphor and a red phosphor are used.

透光封止部材４の放出面４ｂは、大気に接する露出面であり、発光素子３から放射された光を放出する光取り出し面である。この放出面４ｂは、粗面化処理により透光封止部材４の表面に不揃い（ランダム）に凹凸を設けることによって粗面化されている。この凹凸は、例えば断面三角形状に形成されている。このような放出面４ｂの粗さ（Ｒｚ：最大高さ）は１μｍ以上である。これは、放出面４ｂの粗さを可視光の波長（約３８０ｎｍ〜約７８０ｎｍ）より大きく、すなわち１μｍ以上にする必要があるためである。   The emission surface 4 b of the translucent sealing member 4 is an exposed surface that comes into contact with the atmosphere, and is a light extraction surface that emits light emitted from the light emitting element 3. The emission surface 4b is roughened by providing unevenness (randomness) on the surface of the translucent sealing member 4 by roughening treatment. This unevenness is formed, for example, in a triangular cross section. The roughness (Rz: maximum height) of the emission surface 4b is 1 μm or more. This is because the roughness of the emission surface 4b needs to be larger than the wavelength of visible light (about 380 nm to about 780 nm), that is, 1 μm or more.

ここで、粗面化処理としては、例えば、透光封止部材４の表面に対してサンドブラストを行うサンドブラスト加工処理、粗面を有する型枠に材料を流し込み硬化させる型枠加工処理、半硬化状態の材料の表面に対して粗面を有する型を押し当てて粗面形状を転写する転写加工処理及び透光封止部材４の表面に対してゾル状樹脂を噴き付ける噴付加工処理等を用いる。   Here, as the roughening process, for example, a sandblasting process for performing sandblasting on the surface of the translucent sealing member 4, a moldworking process for pouring and curing a material into a mold having a rough surface, a semi-cured state For example, a transfer processing process for transferring a rough surface shape by pressing a mold having a rough surface against the surface of the material and a spray processing process for spraying a sol-like resin to the surface of the light-transmitting sealing member 4 are used. .

一対のリード部５、６は、発光素子３に外部から電力を供給するためのリードフレームである。これらのリード部５、６は、配線基板２の貫通部２ｂに挿入されて配線基板２に設けられており、凹部２ａの底面から外部までそれぞれ引き出されている。このような一対のリード部５、６は、例えば銅等の金属材料により形成されている。   The pair of lead portions 5 and 6 are lead frames for supplying electric power to the light emitting element 3 from the outside. These lead parts 5 and 6 are inserted in the penetration part 2b of the wiring board 2 and provided in the wiring board 2, and are respectively drawn out from the bottom surface of the recess 2a to the outside. Such a pair of lead portions 5 and 6 is formed of a metal material such as copper, for example.

次いで、光半導体装置１Ａの製造工程について説明する。   Next, a manufacturing process of the optical semiconductor device 1A will be described.

最初に、例えばインジェクションモールド法を用いて、熱可塑性樹脂材料により一対のリード部５、６の一部を囲み凹部２ａを形成するように配線基板２を成型する。次に、凹部２ａの底面に位置するリード部５の表面に例えば銀ペースト等の接合部材７を塗布し、その上に発光素子３を載置して約１５０℃で２時間加熱する。次いで、例えば直径２５μｍ程度の金ワイヤ等の接続部材８により、発光素子３の上面電極とリード部６とを電気的に接続する。その後、蛍光体４ａを例えば０．３ｍｇ程度含んだ熱硬化性シリコーン樹脂を凹部２ａの内部に充填し、約１５０℃で２時間加熱し硬化させ、透光封止部材４を形成する。最後に、例えばサンドブラスト処理により、透光封止部材４の表面である放出面４ｂを粗面化する。これにより、光半導体装置１Ａが完成する。   First, for example, by using an injection molding method, the wiring substrate 2 is molded so as to surround a part of the pair of lead portions 5 and 6 and to form the concave portion 2a with a thermoplastic resin material. Next, a bonding member 7 such as silver paste is applied to the surface of the lead portion 5 located on the bottom surface of the recess 2a, and the light emitting element 3 is placed thereon and heated at about 150 ° C. for 2 hours. Next, the upper surface electrode of the light emitting element 3 and the lead portion 6 are electrically connected by a connecting member 8 such as a gold wire having a diameter of about 25 μm, for example. Thereafter, a thermosetting silicone resin containing, for example, about 0.3 mg of the phosphor 4a is filled in the recess 2a and cured by heating at about 150 ° C. for 2 hours to form the light-transmitting sealing member 4. Finally, the emission surface 4b which is the surface of the translucent sealing member 4 is roughened by, for example, sandblasting. Thereby, the optical semiconductor device 1A is completed.

ここで、一対のリード部５、６としては、例えば、表面に厚さ２μｍの銀メッキを施した厚さ１５０μｍのリード部５、６を用いる。また、発光素子３としては、例えば正方形の発光面の一辺が３００μｍであり、代表波長が４６０ｎｍである青色の発光ダイオードを用いる。さらに、蛍光体４ａとしては、例えば、青色光を代表波長５７０μｍの黄色光に変換する黄色の蛍光体を用いる。また、配線基板２の凹部２ａの深さは、例えば０．６ｍｍであり、その凹部２ａの側面の傾斜角度は６０度である。透光封止部材４の放出面４ｂの表面粗さは、例えば約３０μｍである。   Here, as the pair of lead portions 5 and 6, for example, lead portions 5 and 6 having a thickness of 150 μm and having a surface plated with silver of 2 μm are used. As the light emitting element 3, for example, a blue light emitting diode having a square light emitting surface with a side of 300 μm and a representative wavelength of 460 nm is used. Furthermore, as the phosphor 4a, for example, a yellow phosphor that converts blue light into yellow light having a representative wavelength of 570 μm is used. Moreover, the depth of the recessed part 2a of the wiring board 2 is 0.6 mm, for example, and the inclination angle of the side surface of the recessed part 2a is 60 degrees. The surface roughness of the emission surface 4b of the translucent sealing member 4 is, for example, about 30 μm.

次に、このような光半導体装置１Ａの発光動作について説明する。   Next, the light emission operation of the optical semiconductor device 1A will be described.

一対のリード部５、６に電圧が印加され、発光素子３に電力が供給されると、発光素子３は光を放射する。その光の一部は、透光封止部材４を通過してその放出面４ｂから放出され、他の一部は、凹部２ａの側面により反射されて放出面４ｂから放出される。このとき、光の一部が蛍光体４ａに入射する。これにより、蛍光体４ａは励起されて光を放射する。その光の一部も、透光封止部材４を通過してその放出面４ｂから放出され、他の一部も凹部２ａの側面により反射されて放出面４ｂから放出される。   When a voltage is applied to the pair of lead portions 5 and 6 and power is supplied to the light emitting element 3, the light emitting element 3 emits light. Part of the light passes through the translucent sealing member 4 and is emitted from the emission surface 4b, and the other part is reflected by the side surface of the recess 2a and emitted from the emission surface 4b. At this time, a part of the light enters the phosphor 4a. Thereby, the phosphor 4a is excited and emits light. Part of the light also passes through the translucent sealing member 4 and is emitted from the emission surface 4b, and the other part is reflected by the side surface of the recess 2a and emitted from the emission surface 4b.

このようにして、発光素子３により放射された光と、その光により励起された蛍光体４ａにより放射された光とが混合されて、透光封止部材４の放出面４ｂから放出される。このとき、透光封止部材４の放出面４ｂが粗面化されているので、その放出面４ｂの凹凸により、放出面４ｂと空気層との界面での全反射の発生が抑えられる。これにより、光の取り出し効率が向上する。   In this way, the light emitted by the light emitting element 3 and the light emitted by the phosphor 4 a excited by the light are mixed and emitted from the emission surface 4 b of the translucent sealing member 4. At this time, since the emission surface 4b of the translucent sealing member 4 is roughened, the unevenness of the emission surface 4b suppresses the occurrence of total reflection at the interface between the emission surface 4b and the air layer. Thereby, the light extraction efficiency is improved.

ここで、例えば１５０ｍＡの駆動電流を発光素子３に供給すると、光半導体装置１Ａの全光束は約２２ルーメンとなる。この全光束は、放出面４ｂが平坦である光半導体装置に比べて１０％程度向上している。   Here, for example, when a driving current of 150 mA is supplied to the light emitting element 3, the total luminous flux of the optical semiconductor device 1A is about 22 lumens. This total luminous flux is improved by about 10% compared to the optical semiconductor device having a flat emission surface 4b.

以上説明したように、本発明の第１の実施の形態によれば、透光封止部材４の放出面４ｂを粗面化することによって、放出面４ｂと空気層との界面での全反射の発生が抑えられるので、光の取り出し効率を向上させることができ、その結果として、発光効率の低下及び熱劣化を防止することができる。   As described above, according to the first embodiment of the present invention, the total reflection at the interface between the emission surface 4b and the air layer is achieved by roughening the emission surface 4b of the translucent sealing member 4. Since generation | occurrence | production of this is suppressed, the extraction efficiency of light can be improved, As a result, the fall of luminous efficiency and thermal degradation can be prevented.

また、放出面４ｂの粗さ（Ｒｚ：最大高さ）が１μｍ以上であることから、その粗さが可視光の波長（約３８０ｎｍ〜約７８０ｎｍ）より大きくなるので、可視光の取り出し効率を確実に向上させることができる。   Moreover, since the roughness (Rz: maximum height) of the emission surface 4b is 1 μm or more, the roughness becomes larger than the wavelength of visible light (about 380 nm to about 780 nm), so that the extraction efficiency of visible light is ensured. Can be improved.

（第２の実施の形態）
本発明の第２の実施の形態について図３及び図４を参照して説明する。本発明の第２の実施の形態では、第１の実施の形態と異なる部分について説明する。なお、第２の実施の形態においては、第１の実施の形態で説明した部分と同一部分は同一符号で示し、その説明は省略する。 (Second Embodiment)
A second embodiment of the present invention will be described with reference to FIGS. In the second embodiment of the present invention, only parts different from the first embodiment will be described. In the second embodiment, the same parts as those described in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

図３及び図４に示すように、本発明の第２の実施の形態に係る光半導体装置１Ｂでは、透光封止部材４の放出面４ｂが平坦に形成されている。加えて、透光封止部材４の放出面４ｂ上には、その放出面４ｂから放出されて入射した光を出射する面であって粗面化された出射面１１ａを有する透光部材１１が設けられている。   As shown in FIGS. 3 and 4, in the optical semiconductor device 1B according to the second embodiment of the present invention, the emission surface 4b of the translucent sealing member 4 is formed flat. In addition, on the emission surface 4 b of the translucent sealing member 4, there is a translucent member 11 having a roughened emission surface 11 a that is a surface that emits incident light emitted from the emission surface 4 b. Is provided.

透光部材１１は、透光封止部材４の放出面４ｂを覆うようにその放出面４ｂ上に接着用の透光接着部材１２により接合されている。この透光部材１１は、例えば熱硬化性シリコーン樹脂や熱硬化性エポキシ樹脂等の透光性樹脂材料により形成されている。   The translucent member 11 is bonded to the emission surface 4b by the translucent adhesive member 12 for bonding so as to cover the emission surface 4b of the translucent sealing member 4. The translucent member 11 is formed of a translucent resin material such as a thermosetting silicone resin or a thermosetting epoxy resin.

透光接着部材１２は、透光封止部材４の放出面４ｂと透光部材１１との間に設けられている。これにより、透光封止部材４と透光部材１１との接着度が増加するので、光半導体装置１Ｂの機械強度を向上させることができる。なお、透光接着部材１２は、例えば透光性樹脂材料により形成されている。この透光性樹脂材料としては、透光部材１１の屈折率≦透光接着部材１２の屈折率≦透光封止部材４の屈折率という関係式が成り立つような透光性樹脂材料を用いる。   The translucent adhesive member 12 is provided between the emission surface 4 b of the translucent sealing member 4 and the translucent member 11. Thereby, since the adhesiveness of the translucent sealing member 4 and the translucent member 11 increases, the mechanical strength of the optical semiconductor device 1B can be improved. The translucent adhesive member 12 is made of, for example, a translucent resin material. As the translucent resin material, a translucent resin material that satisfies the relational expression of refractive index of translucent member 11 ≦ refractive index of translucent adhesive member 12 ≦ refractive index of translucent sealing member 4 is used.

透光部材１１の出射面１１ａは、大気に接する表面であり、透光封止部材４の放出面４ｂから放出されて入射した光を出射する光取り出し面である。この出射面１１ａは、粗面化処理により透光部材１１の表面に不揃い（ランダム）に凹凸を設けることによって粗面化されている。この凹凸は、例えば断面三角形状に形成されている。このような出射面１１ａの粗さ（Ｒｚ：最大高さ）は１μｍ以上である。これは、出射面１１ａの粗さを可視光の波長（約３８０ｎｍ〜約７８０ｎｍ）より大きく、すなわち１μｍ以上にする必要があるためである。   The light emission surface 11 a of the translucent member 11 is a surface in contact with the atmosphere, and is a light extraction surface that emits incident light emitted from the emission surface 4 b of the translucent sealing member 4. The emission surface 11a is roughened by providing unevenness (random) irregularities on the surface of the translucent member 11 by a roughening process. This unevenness is formed, for example, in a triangular cross section. The roughness (Rz: maximum height) of the emission surface 11a is 1 μm or more. This is because the roughness of the emission surface 11a needs to be larger than the wavelength of visible light (about 380 nm to about 780 nm), that is, 1 μm or more.

ここで、粗面化処理としては、例えば、透光部材１１の表面に対してサンドブラストを行うサンドブラスト加工処理、粗面を有する型枠に材料を流し込み硬化させる型枠加工処理、半硬化状態の材料の表面に対して粗面を有する型を押し当てて粗面形状を転写する転写加工処理及び透光部材１１の表面に対してゾル状樹脂を噴き付ける噴付加工処理等を用いる。   Here, as the roughening process, for example, a sandblasting process in which sandblasting is performed on the surface of the translucent member 11, a moldworking process in which a material is poured into a mold having a rough surface and cured, and a semi-cured material For example, a transfer processing process for transferring a rough surface shape by pressing a mold having a rough surface against the surface, and a spray processing process for spraying a sol-like resin onto the surface of the light transmitting member 11 are used.

透光部材１１の屈折率は、大気の屈折率以上であって透光封止部材４の屈折率以下である。すなわち、透光部材１１は、大気の屈折率≦透光部材１１の屈折率≦透光封止部材４の屈折率≦発光素子３の屈折率という関係式が成り立つように形成されている。なお、大気の屈折率は１．０であり、発光素子３の屈折率（素子基板の屈折率）は約２．５である。   The refractive index of the translucent member 11 is not less than the refractive index of the atmosphere and not more than the refractive index of the translucent sealing member 4. That is, the translucent member 11 is formed so that the relational expression of the refractive index of the air ≦ the refractive index of the translucent member 11 ≦ the refractive index of the translucent sealing member 4 ≦ the refractive index of the light emitting element 3 is satisfied. Note that the refractive index of the atmosphere is 1.0, and the refractive index of the light emitting element 3 (the refractive index of the element substrate) is about 2.5.

ここで、透光封止部材４の透光性樹脂材料としては、例えば、屈折率が約１．４である熱硬化性シリコーン樹脂又は屈折率が約１．５であるフェニル基を含有しない熱硬化性エポキシ樹脂を用いる場合がある。この場合、透光部材１１の透光性樹脂材料としては、１．０≦透光部材１１の屈折率≦１．４（または１．５）≦２．５という関係式が成り立つような透光性樹脂材料を用いる。例えば、透光部材１１の透光性樹脂材料としては、前述の熱硬化性シリコーン樹脂又は前述の熱硬化性エポキシ樹脂に含まれるＣ−Ｈ結合における水素原子の一部をフッ素原子で置換して、低屈折率化させた透光性樹脂を用いる。   Here, the translucent resin material of the translucent sealing member 4 is, for example, a thermosetting silicone resin having a refractive index of about 1.4 or a heat containing no phenyl group having a refractive index of about 1.5. A curable epoxy resin may be used. In this case, the translucent resin material of the translucent member 11 is a translucent material that satisfies the relational expression of 1.0 ≦ the refractive index of the translucent member ≦ 1.4 (or 1.5) ≦ 2.5. A functional resin material is used. For example, as the translucent resin material of the translucent member 11, a part of hydrogen atoms in the C—H bond contained in the above-mentioned thermosetting silicone resin or the above-mentioned thermosetting epoxy resin is substituted with fluorine atoms. A translucent resin having a low refractive index is used.

また、透光部材１１の透光性樹脂材料としては、例えば、屈折率が約１．４である熱硬化性シリコーン樹脂、又は屈折率が約１．５であるフェニル基を含有しない熱硬化性エポキシ樹脂を用いる場合がある。この場合、透光封止部材４の透光性樹脂材料としては、１．０≦１．４≦透光封止部材４の屈折率≦２．５の関係式が成り立つような透光性樹脂材料を用いる。例えば、透光封止部材４の透光性樹脂材料としては、前述の熱硬化性シリコーン樹脂又は前述の熱硬化性エポキシ樹脂に含まれるＣ−Ｈ結合における水素原子の一部をフッ素原子以外のハロゲン元素（塩素、臭素、要素）もしくはイオウで置換して、高屈折率化させた透光性樹脂を用いる。   Further, as the translucent resin material of the translucent member 11, for example, a thermosetting silicone resin having a refractive index of about 1.4, or a thermosetting that does not contain a phenyl group having a refractive index of about 1.5. Epoxy resin may be used. In this case, the translucent resin material of the translucent sealing member 4 is a translucent resin that satisfies the relational expression of 1.0 ≦ 1.4 ≦ the refractive index of the translucent sealing member 4 ≦ 2.5. Use materials. For example, as the translucent resin material of the translucent sealing member 4, a part of hydrogen atoms in the C—H bond contained in the above thermosetting silicone resin or the above thermosetting epoxy resin may be other than fluorine atoms. A translucent resin that is substituted with a halogen element (chlorine, bromine, element) or sulfur to increase the refractive index is used.

次いで、光半導体装置１Ｂの製造工程について説明する。   Next, a manufacturing process of the optical semiconductor device 1B will be described.

最初に、例えばインジェクションモールド法を用いて、熱可塑性樹脂材料により一対のリード部５、６の一部を囲み凹部２ａを形成するように配線基板２を成型する。次に、凹部２ａの底面に位置するリード部５の表面に例えば銀ペースト等の接合部材７を塗布し、その上に発光素子３を載置して約１５０℃で２時間加熱する。次いで、例えば直径２５μｍ程度の金ワイヤ等の接続部材８により、発光素子３の上面電極とリード部６とを電気的に接続する。その後、蛍光体４ａを例えば０．３ｍｇ程度含んだ熱硬化性シリコーン樹脂を凹部２ａの内部に充填し、約１００℃で１時間加熱し半硬化させ、透光封止部材４を形成する。   First, for example, by using an injection molding method, the wiring substrate 2 is molded so as to surround a part of the pair of lead portions 5 and 6 and to form the concave portion 2a with a thermoplastic resin material. Next, a bonding member 7 such as silver paste is applied to the surface of the lead portion 5 located on the bottom surface of the recess 2a, and the light emitting element 3 is placed thereon and heated at about 150 ° C. for 2 hours. Next, the upper surface electrode of the light emitting element 3 and the lead portion 6 are electrically connected by a connecting member 8 such as a gold wire having a diameter of about 25 μm, for example. Thereafter, a thermosetting silicone resin containing, for example, about 0.3 mg of the phosphor 4a is filled in the recess 2a, and is heated and semi-cured at about 100 ° C. for 1 hour to form the translucent sealing member 4.

最後に、透光封止部材４の放出面４ｂ上に透光接着部材１２を塗布し、透光部材１１を搭載して、約１５０℃で２時間加熱し透光封止部材４を本硬化させるとともに、透光部材１１と透光封止部材４とを接着する。これにより、光半導体装置１Ｂが完成する。なお、透光封止部材４は予めモールド成型されており、例えばサンドブラスト処理によりその片面である出射面１１ａが粗面化されている。   Finally, the translucent adhesive member 12 is applied onto the emission surface 4b of the translucent sealing member 4, the translucent member 11 is mounted, and the translucent sealing member 4 is fully cured by heating at about 150 ° C. for 2 hours. In addition, the translucent member 11 and the translucent sealing member 4 are bonded. Thereby, the optical semiconductor device 1B is completed. The translucent sealing member 4 is molded in advance, and the emission surface 11a which is one surface thereof is roughened by, for example, sandblasting.

ここで、一対のリード部５、６としては、例えば、表面に厚さ２μｍの銀メッキを施した厚さ１５０μｍのリード部５、６を用いる。また、発光素子３としては、例えば正方形の発光面の一辺が３００μｍであり、代表波長が４６０ｎｍである青色の発光ダイオードを用いる。さらに、蛍光体４ａとしては、例えば、青色光を代表波長５７０μｍの黄色光に変換する黄色の蛍光体を用いる。また、配線基板２の凹部２ａの深さは、例えば０．６ｍｍであり、その凹部２ａの側面の傾斜角度は６０度である。透光部材１１の寸法は、例えば、直径２．５ｍｍであり、厚さ０．５ｍｍであり、透光部材１１の出射面１１ａの表面粗さは、例えば約３０μｍである。   Here, as the pair of lead portions 5 and 6, for example, lead portions 5 and 6 having a thickness of 150 μm and having a surface plated with silver of 2 μm are used. As the light emitting element 3, for example, a blue light emitting diode having a square light emitting surface with a side of 300 μm and a representative wavelength of 460 nm is used. Furthermore, as the phosphor 4a, for example, a yellow phosphor that converts blue light into yellow light having a representative wavelength of 570 μm is used. Moreover, the depth of the recessed part 2a of the wiring board 2 is 0.6 mm, for example, and the inclination angle of the side surface of the recessed part 2a is 60 degrees. The dimensions of the translucent member 11 are, for example, a diameter of 2.5 mm and a thickness of 0.5 mm, and the surface roughness of the emission surface 11a of the translucent member 11 is, for example, about 30 μm.

次に、このような光半導体装置１Ｂの発光動作について説明する。   Next, the light emission operation of such an optical semiconductor device 1B will be described.

一対のリード部５、６に電圧が印加され、発光素子３に電力が供給されると、発光素子３は光を放射する。その光の一部は、透光封止部材４を通過してその放出面４ｂから放出され、他の一部は、凹部２ａの側面により反射されてその放出面４ｂから放出される。このとき、光の一部が蛍光体４ａに入射する。これにより、蛍光体４ａは励起されて光を放射する。その光の一部も、透光封止部材４を通過してその放出面４ｂから放出され、他の一部も凹部２ａの側面により反射されて放出面４ｂから放出される。   When a voltage is applied to the pair of lead portions 5 and 6 and power is supplied to the light emitting element 3, the light emitting element 3 emits light. Part of the light passes through the translucent sealing member 4 and is emitted from the emission surface 4b, and the other part is reflected by the side surface of the recess 2a and emitted from the emission surface 4b. At this time, a part of the light enters the phosphor 4a. Thereby, the phosphor 4a is excited and emits light. Part of the light also passes through the translucent sealing member 4 and is emitted from the emission surface 4b, and the other part is reflected by the side surface of the recess 2a and emitted from the emission surface 4b.

このようにして、発光素子３により放射された光と、その光により励起された蛍光体４ａにより放射された光とが混合されて、透光封止部材４の放出面４ｂから放出される。この放出面４ｂから放出された光は、透光部材１１に入射してその内部を通過し、透光部材１１の出射面１１ａから出射される。このとき、透光部材１１の出射面１１ａが粗面化されているので、その出射面１１ａの凹凸により、出射面１１ａと空気層との界面での全反射の発生が抑えられる。これにより、光の取り出し効率が向上する。   In this way, the light emitted by the light emitting element 3 and the light emitted by the phosphor 4 a excited by the light are mixed and emitted from the emission surface 4 b of the translucent sealing member 4. The light emitted from the emission surface 4 b enters the light transmissive member 11, passes through the inside thereof, and is emitted from the light emission surface 11 a of the light transmissive member 11. At this time, since the exit surface 11a of the translucent member 11 is roughened, the occurrence of total reflection at the interface between the exit surface 11a and the air layer is suppressed by the unevenness of the exit surface 11a. Thereby, the light extraction efficiency is improved.

ここで、例えば１５０ｍＡの駆動電流を発光素子３に供給すると、光半導体装置１Ｂの全光束は約２２ルーメンとなる。この全光束は、放出面４ｂが平坦であって透光部材１１を備えていない光半導体装置に比べて１０％程度向上している。   Here, for example, when a driving current of 150 mA is supplied to the light emitting element 3, the total luminous flux of the optical semiconductor device 1B becomes about 22 lumens. This total luminous flux is improved by about 10% as compared with the optical semiconductor device in which the emission surface 4b is flat and the translucent member 11 is not provided.

以上説明したように、本発明の第２の実施の形態によれば、透光部材１１の出射面１１ａを粗面化することによって、その出射面１１ａと空気層との界面での全反射の発生が抑えられるので、光の取り出し効率を向上させることができ、その結果として、発光効率の低下及び熱劣化を防止することができる。さらに、透光部材１１の出射面１１ａを粗面化すればよく、透光封止部材４上に透光部材１１を載置する前に、透光部材１１の出射面１１ａを粗面化する粗面化処理を行うことが可能である。これにより、粗面化処理を容易に行うことができ、特に、光半導体装置１Ｂを製造する工程と別工程で行うことができる。   As described above, according to the second embodiment of the present invention, by roughening the exit surface 11a of the translucent member 11, total reflection at the interface between the exit surface 11a and the air layer is achieved. Since generation | occurrence | production is suppressed, the extraction efficiency of light can be improved, As a result, the fall of luminous efficiency and thermal degradation can be prevented. Furthermore, the exit surface 11a of the translucent member 11 may be roughened, and before the translucent member 11 is placed on the translucent sealing member 4, the exit surface 11a of the translucent member 11 is roughened. A roughening treatment can be performed. Thereby, a roughening process can be performed easily and can be performed by the process different from the process of manufacturing the optical semiconductor device 1B especially.

また、出射面１１ａの粗さ（Ｒｚ：最大高さ）が１μｍ以上であることから、その粗さが可視光の波長（約３８０ｎｍ〜約７８０ｎｍ）より大きくなるので、可視光の取り出し効率を確実に向上させることができる。   Moreover, since the roughness (Rz: maximum height) of the emission surface 11a is 1 μm or more, the roughness becomes larger than the wavelength of visible light (about 380 nm to about 780 nm), so that the extraction efficiency of visible light is ensured. Can be improved.

さらに、透光部材１１の屈折率が大気の屈折率以上であって透光封止部材４の屈折率以下であることから、大気及び透光封止部材４に対する透光部材１１の屈折率差が大気と透光封止部材４との屈折率差より大きくなることを抑えることが可能になるので、透光部材１１を設けることによる全反射の発生頻度の上昇を防止することができる。さらに、透光部材１１の屈折率を大気の屈折率より大きく透光封止部材４の屈折率より小さくすることによって、透光部材１１により急激な屈折率の変化を抑えることが可能になる。これにより、透光部材１１を備えていない光半導体装置、すなわち光が透光封止部材４の放出面４ｂから直接大気中に放出される場合に比べ、全反射の発生がさらに抑えられるので、確実に光の取り出し効率を向上させることができる。   Further, since the refractive index of the translucent member 11 is equal to or higher than the refractive index of the atmosphere and equal to or lower than the refractive index of the translucent sealing member 4, the refractive index difference of the translucent member 11 with respect to the atmosphere and the translucent sealing member 4. Can be prevented from becoming larger than the difference in refractive index between the atmosphere and the translucent sealing member 4, so that the frequency of occurrence of total reflection due to the provision of the translucent member 11 can be prevented. Furthermore, by making the refractive index of the translucent member 11 larger than the refractive index of the atmosphere and smaller than the refractive index of the translucent sealing member 4, it is possible to suppress a sudden change in the refractive index by the translucent member 11. Thereby, compared with the optical semiconductor device that does not include the translucent member 11, that is, when light is emitted directly from the emission surface 4b of the translucent sealing member 4 into the atmosphere, the occurrence of total reflection is further suppressed. The light extraction efficiency can be reliably improved.

（他の実施の形態）
なお、本発明は、前述の実施の形態に限るものではなく、その要旨を逸脱しない範囲において種々変更可能である。 (Other embodiments)
The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

例えば、前述の実施の形態においては、各種の数値を挙げているが、それらの数値は例示であり、限定されるものではない。   For example, in the above-described embodiment, various numerical values are given, but these numerical values are examples and are not limited.

また、前述の第１の実施の形態においては、透光封止部材４の放出面４ｂに設ける凹凸を断面三角形状に形成しているが、これに限るものではなく、例えば、断面半円形状や断面四角形状に形成するようにしてもよい。   In the first embodiment described above, the projections and depressions provided on the emission surface 4b of the translucent sealing member 4 are formed in a triangular cross section. However, the present invention is not limited to this. Alternatively, it may be formed in a quadrangular cross section.

また、前述の第２の実施の形態においては、透光部材１１の出射面１１ａに設ける凹凸を断面三角形状に形成しているが、これに限るものではなく、例えば、断面半円形状や断面四角形状に形成するようにしてもよい。   In the second embodiment described above, the projections and depressions provided on the emission surface 11a of the translucent member 11 are formed in a triangular cross section. However, the present invention is not limited to this. You may make it form in square shape.

最後に、前述の第２の実施の形態においては、透光封止部材４の放出面４ｂの上に透光接着部材１２により透光部材１１を接合しているが、これに限るものではなく、例えば、透光接着部材１２を用いずに、透光封止部材４及び透光部材１１を予めそれぞれ仮硬化させておき、透光封止部材４上に透光部材１１を載置し、その後、加熱接着及び本硬化させることにより、透光封止部材４の放出面４ｂの上に透光部材１１を接合するようにしてもよい。   Finally, in the second embodiment described above, the translucent member 11 is joined to the emission surface 4b of the translucent sealing member 4 by the translucent adhesive member 12. However, the present invention is not limited to this. For example, without using the translucent adhesive member 12, the translucent sealing member 4 and the translucent member 11 are preliminarily cured in advance, and the translucent member 11 is placed on the translucent sealing member 4, Then, you may make it join the translucent member 11 on the discharge | release surface 4b of the translucent sealing member 4 by carrying out heat adhesion and this hardening.

本発明の第１の実施の形態に係る光半導体装置の概略構成を示す斜視図である。1 is a perspective view showing a schematic configuration of an optical semiconductor device according to a first embodiment of the present invention. 図１のＡ−Ａ線断面図である。It is the sectional view on the AA line of FIG. 本発明の第２の実施の形態に係る光半導体装置の概略構成を示す斜視図である。It is a perspective view which shows schematic structure of the optical semiconductor device which concerns on the 2nd Embodiment of this invention. 図３のＢ−Ｂ線断面図である。FIG. 4 is a sectional view taken along line BB in FIG. 3.

符号の説明Explanation of symbols

１Ａ，１Ｂ…光半導体装置、２…配線基板、２ａ…凹部、３…発光素子、４…透光封止部材、４ａ…蛍光体、４ｂ…放出面、１１…透光部材、１１ａ…出射面   DESCRIPTION OF SYMBOLS 1A, 1B ... Optical semiconductor device, 2 ... Wiring board, 2a ... Recessed part, 3 ... Light emitting element, 4 ... Translucent sealing member, 4a ... Phosphor, 4b ... Emission surface, 11 ... Translucent member, 11a ... Emission surface

Claims (5)

凹部を有する配線基板と、
前記凹部に収容され、光を放射する発光素子と、
前記発光素子を封止するように前記凹部に設けられ、前記発光素子から放射された前記光の波長を変換する蛍光体を含有し、前記発光素子から放射された前記光を放出する面であって粗面化された放出面を有する透光封止部材と、
を備えることを特徴とする光半導体装置。 A wiring board having a recess;
A light emitting element that is housed in the recess and emits light;
A surface that is provided in the recess to seal the light emitting element, contains a phosphor that converts the wavelength of the light emitted from the light emitting element, and emits the light emitted from the light emitting element. A light-transmitting sealing member having a roughened emission surface;
An optical semiconductor device comprising: 前記放出面の粗さは１μｍ以上であることを特徴とする請求項１記載の光半導体装置。   The optical semiconductor device according to claim 1, wherein the emission surface has a roughness of 1 μm or more. 凹部を有する配線基板と、
前記凹部に収容され、光を放射する発光素子と、
前記発光素子を封止するように前記凹部に設けられ、前記発光素子から放射された前記光の波長を変換する蛍光体を含有し、前記発光素子から放射された前記光を放出する放出面を有する透光封止部材と、
前記透光封止部材の前記放出面上に設けられ、前記放出面から放出されて入射した前記光を出射する面であって粗面化された出射面を有する透光部材と、
を備えることを特徴とする光半導体装置。 A wiring board having a recess;
A light emitting element that is housed in the recess and emits light;
An emission surface that is provided in the recess so as to seal the light emitting element, contains a phosphor that converts the wavelength of the light emitted from the light emitting element, and emits the light emitted from the light emitting element. A translucent sealing member having,
A translucent member that is provided on the emission surface of the translucent sealing member and that has a roughened emission surface that emits the light emitted from the emission surface and incident;
An optical semiconductor device comprising: 前記出射面の粗さは１μｍ以上であることを特徴とする請求項３記載の光半導体装置。   The optical semiconductor device according to claim 3, wherein a roughness of the emission surface is 1 μm or more. 前記透光部材の屈折率は、大気の屈折率以上であって前記透光封止部材の屈折率以下であることを特徴とする請求項３又は４記載の光半導体装置。   5. The optical semiconductor device according to claim 3, wherein a refractive index of the light transmissive member is equal to or higher than a refractive index of the atmosphere and equal to or lower than a refractive index of the light transmissive sealing member.
JP2006150312A 2006-05-30 2006-05-30 Optical semiconductor device Pending JP2007324220A (en)

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