JP2007280641A - Plasma treatment device and plasma treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment device securing a high-speed treatment capacity at low power in a simple device structure, realizing a uniform treatment, and capable of corresponding even to a large-scale treated object. <P>SOLUTION: Gas is supplied from gas flow channels (slits) 9a, 9b, 9c, 9d to a discharge space A, and at the same time, a high-frequency power is supplied from a high-frequency power source 11 to power supply electrodes 3a, 3b and ground electrodes 4a, 4b, 4c, 4d to generate plasma at discharge spaces Ba, Bb, Bc, Bd where the power supply electrodes 4a, 4b, 4c, 4d and the ground electrodes 4a, 4b, 4c, 4d oppose each other, and the plasma is sent into a plasma treatment space A to treat a treated object 1 with. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus and method for processing an object to be processed with active species in plasma under a pressure at or near atmospheric pressure. In particular, in the present invention, the plasma generation space formed in the middle of the supply path of the gas supplied toward the object to be processed and the plasma processing space for processing the object to be processed are adjacent to each other and generated in the plasma generation space. The present invention relates to a plasma processing apparatus for processing an object to be processed with plasma.

For example, Patent Literature 1, Patent Literature 2 and the like disclose an atmospheric pressure plasma processing apparatus. In this method, a heat-resistant solid dielectric such as glass, ceramics, or plastic is placed on the surface of the opposing electrode under atmospheric pressure, and a high voltage is applied between the electrodes using a rare gas such as helium and a reactive gas. Thus, a highly stable glow discharge without arc discharge can be obtained.
Since these atmospheric pressure plasma devices perform processing under atmospheric pressure, a vacuum chamber and an exhaust system are not required compared to a vacuum plasma processing device, the device configuration is simplified, handling is easy, and device cost is reduced. There is a feature that can suppress.
Furthermore, as a method for improving the processing density by improving the uniformity of plasma density under atmospheric pressure, improving the uniformity of in-plane content, improving the processing rate, and reducing the damage caused by plasma, Patent Document 3 has been proposed.
Japanese Patent Laid-Open No. 2-15171 Japanese Patent Laid-Open No. 3-229886 JP-A-8-279495

In an atmospheric pressure plasma processing apparatus, since plasma is generated under atmospheric pressure, plasma uniformity and stability are not always sufficient. As a result, problems such as non-uniform processing and unprocessed portions are generated.
Patent Document 3 attempts to solve the above problem. FIG. 9 shows a schematic cross-sectional view of an atmospheric pressure plasma processing apparatus described in Patent Document 3. As shown in FIG. 9, the gas is irradiated with ultraviolet rays by the ultraviolet lamp A24 through the transparent window A22 of the gas introduction tube A20, thereby increasing the excitation level of the gas. The first pair of plasma generation electrodes A26 on the downstream side generate plasma in the plasma region AA using a gas having an enhanced excitation level. Further, plasma is generated by re-exciting the gas at a position where the activated state of the gas activated in the plasma area AA is not lost by the second pair of plasma generating electrodes A30 provided on the downstream side thereof. . The object to be processed A1 is processed by the active species in the plasma region AA.
The plasma apparatus shown in FIG. 9 has the first pair of plasma generation electrodes A26 and the second pair of plasma generation electrodes A30, but requires independent power sources with different frequencies. In addition, the apparatus configuration is complicated because the ultraviolet lamp A24 is necessary, and the apparatus price cannot be reduced.

ｋ：ボルツマン定数
Ｔ：温度
ｐ：圧力
σ：運動している分子の幾何学的な断面積 In addition, molecules pass through the gas introduction tube A20, and the molecules activated several times before the gas activated in the transparent window 22 and plasma region A, which is an ultraviolet lamp irradiation unit, reaches the plasma region B. Repeatedly, most of the gas disappears from the active state, and the expected effect is not exhibited. That is, the mean free path λ of gas is expressed by the following formula (1).

k: Boltzmann constant T: Temperature p: Pressure σ: Geometric cross section of a moving molecule

Actually, the mean free path of nitrogen under atmospheric pressure is λ = 0.067 μm when calculated at room temperature (T = 300 ° K) and the molecular diameter is 3.7e ⁻¹⁰ m, and the plasma excited upstream It can be easily imagined that the active state disappears by repeating the collision many times while moving to the downstream.
Even if the temperature rises due to the generation of plasma, the pressure is maintained at atmospheric pressure because of the open system. Therefore, even if the absolute temperature of the gas is, for example, twice (about 300 ° C.), λ is only 3√2 times, and is on the order of 0.1 μm, and there is no significant change in the situation.

Further, in the recent flat panel display industry, an object to be processed, that is, a glass substrate, has been increased in size, and even a plasma processing apparatus under atmospheric pressure has increased in apparatus size in accordance with the substrate. In an apparatus that treats the entire surface at the same time, it is necessary to increase the size of the electrode, and at the same time, an electric field distribution is generated in the electrode at the frequency of the high-frequency power source used, and plasma non-uniformity occurs accordingly. In addition, the power applied to these electrodes also increases, resulting in an increase in device cost.
The present invention solves the above-described problems, and provides a plasma processing apparatus having a simple apparatus configuration. In addition, the present invention provides a plasma processing apparatus that reduces the cost of the apparatus. The present invention also provides a plasma processing apparatus that ensures high-speed processing capability with low power and realizes uniform processing. Furthermore, the present invention provides a plasma processing apparatus that can easily cope with a large object to be processed while having the same effect.

  In order to solve the above problems, the plasma processing apparatus of the present invention is arranged with the power supply electrode arranged facing the processing surface of the object to be processed and the power supply electrode arranged in the moving direction of the object to be processed. A ground electrode, a high-frequency power source that supplies high-frequency power to the power supply electrode and the ground electrode, a gas flow passage that supplies gas to a discharge space where the power supply electrode and the ground electrode face each other, and a continuous flow from the gas flow passage. A plasma processing space having a processing surface as a processing surface of the object to be processed and a surface opposite to the power supply electrode, and a transfer means for transferring the object to be processed into the plasma processing space. Accordingly, the plasma generation space and the plasma processing space are adjacent to each other, and the object to be processed can be plasma-processed by the plasma generated in the plasma generation space. Further, a line-shaped plasma processing space having the width of the object to be processed can be formed by making the width of the object to be processed substantially equal to the width of the power supply electrode.

In the plasma processing apparatus of the present invention, it is preferable that the ground electrode is disposed on the upstream side and the downstream side in the moving direction of the workpiece with respect to the power supply electrode. Thereby, a long processing space can be formed in the moving direction of the workpiece.
In the plasma processing apparatus of the present invention, units having gas supply passages for supplying gas to the discharge space where the power supply electrode and the ground electrode face each other and the power supply electrode and the ground electrode are arranged on both surfaces of the object to be processed. And it is desirable to form the said plasma processing space on both surfaces of the said to-be-processed object. Thereby, both surfaces of the object to be processed can be subjected to plasma processing at the same time.
The plasma processing apparatus of the present invention supplies high frequency power so that the power supply electrode disposed on one surface of the workpiece and the power supply electrode disposed on the other surface are in opposite phases to each other. Is desirable. Thereby, plasma can be generated on both surfaces of the object to be processed at a low voltage.
In the plasma processing apparatus of the present invention, it is desirable that the electric field E1 formed in the discharge space is stronger than the electric field E2 generated in the plasma processing space. Thereby, the stable discharge range can be moved to the low voltage side.
In the plasma processing apparatus of the present invention, it is preferable that the relationship between the capacitance C1 in the discharge space and the capacitance C2 in the plasma processing space is a relationship of (C2 / 10) <C1. Thereby, input electric power can be decreased.
In the plasma processing apparatus of the present invention, it is desirable that the relationship between the time s during which gas passes through the discharge space and the frequency f of the high-frequency power supply satisfy s> 100 / f. Thereby, a plasma with high density can be generated in the discharge space formed on the processing surface of the object to be processed, and the processing speed can be increased.
Furthermore, the present invention is a plasma processing method for plasma processing an object to be processed using the plasma processing apparatus. Thereby, a to-be-processed object can be plasma-processed.

  According to the plasma processing apparatus of the present invention, the plasma generation space and the processing space for processing the object to be processed are adjacent to each other, so that the plasma generated in the plasma generation space can be sent to the plasma processing space, and more effectively. A workpiece can be plasma-treated. In addition, a stable plasma in a wide range can be sent to the plasma processing space. Further, according to the plasma processing apparatus of the present invention, a simple apparatus configuration can be achieved, the apparatus price can be suppressed, high-speed and high-speed processing capability can be secured, and even a large object to be processed can be handled.

In the plasma processing apparatus of the present invention, a power supply electrode and a ground electrode are arranged side by side so as to face a plasma processing surface of an object to be processed, and a gas is passed between the power supply electrode and the ground electrode, whereby plasma is generated. The object to be processed is plasma-processed by the gas generated and the plasma is generated.
FIG. 1 shows a side cross-sectional view of a plasma processing apparatus when it is cut along a plane perpendicular to the river width direction in a process of hydrophilizing an object to be processed.

As shown in FIG. 1, the plasma processing apparatus includes transport means 2 a for transporting an object to be processed 1 such as an insulating substrate such as glass, ceramics, or plastic, or a substrate made of a semiconductor material such as silicon, GaAs, or SiC. 2b is provided on the upstream side and downstream side of the plasma processing apparatus. FIG. 1 shows the rotation shafts 2c and 2d of the transport means 2a and 2b, and also shows a part of the transport rotating body. In FIG. 1, support rollers 10a and 10b are provided on the upstream side and the downstream side in proximity to the lower unit U2. An upper wall 11 and a lower wall 12 are disposed in order to secure a conveyance space for the workpiece 1.
The workpiece 1 is conveyed from the right direction to the left direction in FIG. 1 as indicated by the arrow A by the conveying means 2a and 2b and the supporting rollers 10a and 10b.

  The plasma processing apparatus of FIG. 1 arranges the upper unit U1 and the lower unit U2 facing each other so as to sandwich the workpiece 1 because both surfaces of the workpiece 1 are processed simultaneously by the plasma formed in a line shape. To do. Accordingly, the object to be processed moves from the right side to the left side, and both sides of the workpiece are simultaneously plasma-treated by the line-shaped plasma in the upper unit U1 and the lower unit U2. The upper unit U1 and the lower unit U2 do not necessarily have to face each other. However, when the upper unit U1 and the lower unit U2 are arranged at the opposite positions, the power applied to the power supply electrodes of the upper unit U1 and the lower unit U2 is reversed in phase as described later Thus, it can be operated at a lower voltage.

In the upper unit U1, gas necessary for processing is sent from an unillustrated gas supply facility to upper gas reservoirs 7a and 7b. In FIG. 1, a path for sending gas from the gas supply facility to the gas reservoirs 7a and 7b is indicated by an arrow. The gas reservoir 7a of the upper unit U1 is disposed on the downstream side of the discharge space A, and the gas reservoir 7b is disposed on the downstream side of the discharge space A.
Here, the gas used was He gas as a rare gas and Air as an additive gas. Air mixed 2% He gas volume flow ratio. This gas is used for hydrophilization, and the type of gas is not specified, the type of substrate such as glass or semiconductor, substrate cleaning treatment, film formation, etching treatment, ashing treatment, surface It is preferable to select a necessary gas according to the plasma processing content as in the modification processing.

The gas introduced into the gas reservoirs 7a and 7b of the upper unit U1 is supplied to the slits 9a and 9b from gas ejection ports provided at equal intervals in the depth direction of FIG. As the gas ejection port, for example, holes with a diameter of 0.5 mm were provided at intervals of 3 mm. The size and interval of the ejection ports may be appropriately designed so that the gas concentration is uniform according to the size of the apparatus, the type of gas, and the amount of gas supplied.
The gas passes through the discharge spaces Ba and Bb formed by the power supply electrode 3a and the adjacent ground electrodes 4a and 4b through the slits 9a and 9b, and is sent to the upper plasma processing space A1 of the workpiece to be plasma processed. It is done. Thereafter, the gas is released through a transfer space for transferring the workpiece. As shown in FIG. 1, the discharge space B is formed in a direction perpendicular to the processing surface of the workpiece. The plasma processing space A is adjacent to the discharge space B so as to be continuous with the discharge space B, and is formed in a direction parallel to the processing surface of the workpiece.
In the upper unit U1, the power supply electrode 3a and the ground electrodes 4a and 4b are opposed to the upper plasma processing space A of the workpiece, and the upstream and downstream sides in the moving direction of the workpiece with the power supply electrode 3a in the middle. The ground electrodes 4a and 4b are arranged side by side. Further, discharge spaces Ba and Bb of about 0.5 to 2 mm are opened, and the periphery of the power supply electrode 3a is covered with a power supply electrode portion solid dielectric 5a made of alumina, for example. The thickness of the power supply electrode portion solid dielectric 5a is about 1 to 5 mm. The surroundings of the ground electrodes 4a and 4b are covered with ground electrode part solid dielectrics 6a and 6b made of alumina, for example. The thickness of the ground electrode solid dielectrics 6a and 6b is about 1 to 5 mm. Between the ground electrodes 4a and 4b and the ground electrode portion solid dielectrics 6a and 6b covering the ground electrodes 4a and 4b, Teflon (registered trademark) 8a and 8b are filled to prevent unnecessary discharge.

The lower unit U2 is configured similarly to the upper unit U1. In FIG. 1, the same numerals are assigned to the same parts, and the English letters are changed.
Although the plasma processing apparatus described above includes the upper unit U1 on one processing surface of the workpiece and the lower unit U2 on the other processing surface, only one of them may be used. Further, although the upper unit U1 and the lower unit U2 are configured to include the ground electrodes 4a, 4b, 4c, and 4d on the upstream side and the downstream side of the power supply electrodes 3a and 3b, only one of the ground electrodes may be used. Absent.
The plasma apparatus of the present invention described above can perform plasma processing at atmospheric pressure, and therefore the plasma apparatus does not need to be stored in a sealed container like a chamber or a processing chamber, but protects from surrounding dirt. Therefore, it may be stored in a sealed container or semi-sealed container.

The ground electrodes 4a, 4b, 4c, and 4d are connected to the ground potential of the plasma processing apparatus. The high frequency power supply 11 is connected between the power supply electrode 3a of the upper unit U1 and the power supply electrode 3b of the lower unit U2. At this time, a 20 kHz high frequency power supply is used as the high frequency power supply 11, and a voltage having a waveform shown in FIG. 2A is applied to the power supply electrode 3a of the upper unit U1. As shown in FIG. 2B, a reverse polarity voltage is applied to the power supply electrode 3b of the lower unit U2.
The plasma processing apparatus must pass the workpiece through the plasma processing space A. In this case, the workpiece and the power supply electrodes 3a and 3b and the ground electrodes 4a, 4b, 4c, and 4d do not interfere with each other. In order to achieve this, it is necessary to maintain a certain interval. Here, in the case of the present invention, since a reverse polarity voltage is applied, it is possible to apply a double electric field with a voltage that is apparently about half as low. For this reason, unnecessary discharge is not generated in an unexpected place, and there is little failure of the plasma processing apparatus, and stable operation is possible. Therefore, a design with a high withstand voltage is not necessary. Moreover, in the plasma processing apparatus of this invention, the double-sided process of a to-be-processed object is attained by applying the electric power of reverse polarity to the power supply electrodes 3a and 3b which oppose. In this way, the plasma generated in the plasma generation space B is sent to the plasma processing space A, and further, by applying a voltage having a reverse polarity, it is possible to generate plasma in the plasma processing space A. As a result, the plasma processing The plasma density in the space A can be increased.
Therefore, even if the mean free path of the plasma is short, plasma is generated once in the plasma generation space B, the plasma is sent to the plasma processing space A, and further an electric field is applied in the plasma processing space A, so that the plasma processing space A Can obtain a high-density plasma.

In the above description, a high frequency power supply of 20 kHz is used as the high frequency power supply 11, but a frequency of about several KHz to about several tens of MHz can be used as the power supply frequency. However, generally, as the frequency increases, the cost of the power supply device increases and it becomes difficult to generate a high voltage. For this reason, the distance between the power supply electrodes 3a and 3b needs to be narrowed. However, if the distance is narrowed, the accuracy of the workpiece transfer device must be increased. In the present invention, by using several tens KHz to several hundreds KHz, it is not necessary to make the conveying device highly accurate. In particular, the best results were obtained when using 20 KHz.
Since the electric field strength of the electric field in the discharge space A is determined by the potential difference applied to the power supply electrodes 3a and 3b, the electric power supply electrode so that the electric fields in the discharge spaces Ba, Bb, Bc, and Bd are stronger than the electric field strength. 3a and the potentials of the ground electrodes 4a and 4b are set. Further, the potentials of the power supply electrode 3b and the ground electrodes 4c and 4d are set. In this case, the upper limit of the electric field strength of the discharge space A, the discharge spaces Ba, Bb and Bc, Bd is determined by the breakdown voltage of the members used for the power supply electrode 3b and the ground electrodes 4c, 4d. The lower limit value is set according to the type of gas passing through the discharge spaces Ba, Bb and Bc, Bd, and may be any electric field strength that is necessary and sufficient for causing dielectric breakdown and glow discharge.
In this way, when the voltage supplied from the high frequency power supply 11 is increased, plasma is first generated in the discharge spaces Ba, Bb and Bc, Bd, and then high density plasma can be generated in the plasma processing space A. For this reason, the plasma generated in the discharge space B is sent into the plasma processing space A, and further plasma is generated by the electric field applied to the plasma processing space A, so that high-density plasma can be obtained.
In the present invention, the distance between the units U1 and U2 may be set in a range in which there is no interference with the object to be processed, and is narrow in order to make the gas supplied to the discharge space A high concentration above a certain level. For example, it may be about 2 mm. In this case, it is not necessary to consider the mutual relationship between the distance between the power supply electrode 3a and the ground electrodes 4a and 4b and the distance between the power supply electrode 3b and the ground electrodes 4c and 4d.

As described above, the power supply electrodes 3a and 3b and the ground electrodes 4a and 4b are arranged side by side so as to face the processing surface of the object to be processed, so that a stable discharge range is expanded as shown in FIG. However, uniform and high-speed processing is possible. The horizontal axis of FIG. 3 represents the voltage applied to the power supply electrode, and the vertical axis represents the amount of air mixed (%) in the He gas. FIG. 3 shows a stable discharge range in the case where there is no plasma generation in the discharge spaces Ba, Bb and Bc, Bd, and in which the mixing ratio of He and Air as the gases to be introduced is changed. The discharge state is confirmed visually. Here, in the case where plasma is generated, when the discharge is weak, light and dark appear in the filament-shaped plasma, and when the voltage is higher than that, uniform glow discharge occurs, and when the voltage is further increased, arc-shaped discharge occurs.
FIG. 3 shows that when there is plasma generation in the discharge spaces Ba, Bb and Bc, Bd, the stable discharge range is shifted to the lower voltage side compared with the case where there is no plasma generation, and the voltage is increased. In this case, the stable discharge voltage does not change and is expanded to the lower voltage side.
As described above, the plasma processing apparatus of the present invention is configured, and when the introduced gas passes through the discharge spaces Ba, Bb and Bc, Bd, the plasma is generated by the electric field formed by the electric power supplied from the high frequency power supply 11. Generate.

Next, the relationship between the electrostatic capacity of the plasma processing space A and the discharge space B will be described.
Here, a case where the object to be processed 1 is 1500 × 1800 mm and a glass substrate having a thickness of 0.7 mm is subjected to a hydrophilic treatment will be described.
Since the workpiece 1 passes through the plasma processing space A of the plasma processing apparatus, the distance between the units U1 and U2 arranged above and below is set to 5.5 mm. Further, the distance between the power supply electrode 3a and the ground electrodes 4a and 4b was set to 1 mm so that the electric fields in the discharge spaces Ba, Bb and Bc, Bd were stronger than the electric field in the plasma processing space A.
Next, the capacitance ratio between the discharge space A and the discharge spaces Ba, Bb and Bc, Bd is simply calculated from the dimensions of the cross-sectional shape of FIG. 4 and the width 1,580 mm in the transport direction of the workpiece 1. Then, discharge space A: discharge space Ba + Bb + Bc + Bd = (23 × 1580) /5.5: ((9 × 1580) / 1) × 4≈1: 8.6. This is structure 1.
When the structure shown in FIG. 5 is the structure 2 and the capacitance ratio of the plasma processing space A ′ and the discharge spaces Ba ′, Bb ′, Bc ′, and Bd ′ is similarly determined, the plasma processing space A ′: discharge space Ba ′ is obtained. + Bb ′ + Bc ′ + Bd ′ = (23 × 1580) /5.5: ((20 × 1580) /1.5) × 4≈1: 12.8.

In this case, when the structure 1 is selected as shown in FIGS. 6 and 7, the input power for obtaining the same processing capability can be considerably reduced as compared with the structure 2. That is, FIG. 6 shows a comparison of the contact angles of pure water before and after the plasma treatment of the structures 1 and 2 using the plasma processing apparatus of the present invention. FIG. 6 shows that the input power of structure 1 is 0.88 kW and the input power of structure 2 is 1.44 kW. The voltage, processing gas, and conveyance speed were the same. Thus, it can be seen from FIG. 6 that the structure 1 can obtain substantially the same result as the structure 2 even if the input power is reduced.
FIG. 7 is a diagram showing a comparison of power required when plasma processing is performed on the structure 1 and the structure 2 to the same extent. FIG. 7 shows the calculation result and the result of FIG. 6, and shows that structure 1 has less input power than structure 2.
As described above, even when the size is increased, the power required for plasma processing can be reduced, and processing with a small-scale power supply is possible.

Next, the relationship between the flow rate of the gas passing through the discharge spaces Ba, Bb, Bc, and Bd and the frequency of the high-frequency power source 21 for generating plasma is as follows. In the example, a flow rate of 32.64 L / min was flowed as a whole for the rare gases He and Air. In this case, the time S passing through the discharge spaces Ba, Bb, Bc, Bd is about 0.012 seconds when the entire flow rate is equally divided and calculated from the relationship between the flow rate and the cross-sectional area in each space. Accordingly, the passing speed: (1 / frequency) is 1: 232, and plasma is sufficiently generated. Plasma with a higher density is generated in the plasma processing space A, and the plasma processing apparatus has a high processing speed.
The result is shown in FIG. FIG. 8 shows a comparison between an apparatus using the excimer UV, which has been used as a tool for improving wettability in the mainstream, and an apparatus of the present invention. The plasma processing apparatus of the present invention uses an excimer UV. It can be seen that the throughput is sufficiently higher than the equipment used.
From this result, s> 100 / f can be obtained as the relationship between the time s during which the gas passes through the discharge space and the frequency f of the high-frequency power source that supplies power to the power supply electrode. Here, (1 / frequency) of passage speed: (1 / frequency) has no particular upper limit, and is about 10 as the lower limit.

Side surface sectional drawing cut | disconnected by the surface perpendicular | vertical to the river width direction of a plasma processing apparatus is shown. The voltage waveform figure applied to the electrode of a plasma processing apparatus is shown. The figure explaining the range of the stable discharge of a plasma processing apparatus is shown. The figure explaining the capacitance ratio of the structure 1 of a plasma processing apparatus is shown. The figure explaining the capacitance ratio of the structure 2 of a plasma processing apparatus is shown. The figure explaining the electric power and structure required for a process of a plasma processing apparatus is shown. The figure explaining the electric power required for the process of a plasma processing apparatus, and an electrostatic capacitance ratio is shown. The figure explaining the processing capability difference with the excimer UV of a plasma processing apparatus is shown. Sectional drawing of the plasma processing apparatus demonstrated by background art is shown.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 To-be-processed object 2 Substrate conveyance means 3a, 3b Power supply electrode 4a, 4b, 4c, 4d Ground electrode 5a, 5b Power supply electrode part solid dielectric 6a, 6b Ground electrode part Solid dielectric 7a, 7b, 7c, 7c Gas Reservoir 8a, 8b Teflon (registered trademark)
9 Gas ejection slit 11 Power source A Plasma processing space Ba, Bb, Bc, Bd Discharge space U1 Upper unit U2 Lower unit

Claims (8)

A power supply electrode disposed opposite the processing surface of the workpiece;
A grounding electrode arranged side by side with the power supply electrode in the moving direction of the workpiece;
A high frequency power source for supplying high frequency power to the power supply electrode and the ground electrode;
A gas flow path for supplying gas to the discharge space where the power supply electrode and the ground electrode face each other;
A plasma processing space which is continuous from the gas flow path and has a processing surface as a processing surface of the object to be processed and a surface facing the power supply electrode;
A plasma processing apparatus comprising transport means for transporting an object to be processed into the plasma processing space.   The plasma processing apparatus according to claim 1, wherein the ground electrode is disposed on the upstream side and the downstream side in the moving direction of the object to be processed with respect to the power supply electrode.   A unit having a gas flow path for supplying gas to a discharge space where the power supply electrode and the ground electrode face each other is disposed on both surfaces of the object to be processed, and the plasma processing space is The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is formed on both surfaces of an object to be processed.   4. The plasma according to claim 3, wherein high-frequency power is supplied to a power supply electrode disposed on one surface of the object to be processed and a power supply electrode disposed on the other surface so as to be in opposite phases to each other. Processing equipment.   5. The plasma processing apparatus according to claim 1, wherein an electric field E <b> 1 formed in the discharge space is stronger than an electric field E <b> 2 generated in the plasma processing space.   The relationship between the capacitance C1 in the discharge space and the capacitance C2 in the plasma processing space is a relationship of (C2 / 10) <C1. The plasma processing apparatus according to 1.   The plasma processing according to any one of claims 1 to 6, wherein a relationship between a time s during which the gas passes through the discharge space and a frequency f of the high-frequency power supply satisfies s> 100 / f. apparatus.   A plasma processing method, comprising: using the plasma processing apparatus according to claim 1, plasma-treating an object to be processed.

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