JP2007241999A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of transmitting and receiving data with a reader/writer and reducing breakdown or interference due to static electricity. <P>SOLUTION: The semiconductor device includes a semiconductor integrated circuit, a conductive layer serving as an antenna that is connected to the semiconductor integrated circuit, and a substrate gripping the semiconductor integrated circuit and the conductive layer, where at least one of a layer forming the semiconductor integrated circuit, a layer covering the semiconductor integrated circuit and the substrate is formed from a conductive polymer. In accordance with the above structure, wireless communication with the reader/writer is possible, and breakdown or malfunction in the semiconductor integrated circuit due to static electricity is reduced. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device that transmits and receives data by wireless communication via an antenna such as an IC card, an RFID tag, an IC tag, an ID tag, a transponder, an IC chip, and an ID chip.

  2. Description of the Related Art A semiconductor device including an antenna and a semiconductor integrated circuit electrically connected to the antenna is attracting attention as an RFID tag. A plurality of antennas are provided over a flexible substrate, and a semiconductor integrated circuit is provided for the plurality of antennas. An RFID tag manufacturing method for electrically connecting circuits has been proposed (see Patent Document 1).

  A semiconductor device that transmits and receives data by wireless communication via an antenna is sandwiched between organic resins, and the organic resin is easily charged with static electricity. In addition, static electricity charged in the semiconductor device may cause destruction of the semiconductor integrated circuit inside the semiconductor device or cause noise in an electric signal to cause malfunction.

For this reason, in order to avoid breakdown or failure due to static electricity, a method of covering the surface of the semiconductor device with a metal plate and preventing destruction or malfunction of the semiconductor integrated circuit due to static electricity has been taken.
JP 2005-115646 A

  However, covering the semiconductor device with a metal plate reduces disturbance due to static electricity, but also interferes with transmission / reception of electromagnetic waves or radio waves, thereby reducing the communication function of the semiconductor device. As a result, there is a problem that the semiconductor device cannot transmit / receive electromagnetic waves or radio waves via the antenna.

  In view of the above, an object of the present invention is to provide a semiconductor device capable of transmitting and receiving with a reader / writer and capable of reducing breakdown and failure due to static electricity.

  The present invention includes a semiconductor integrated circuit, a conductive layer functioning as an antenna connected to the semiconductor integrated circuit, and one or a plurality of substrates covering the semiconductor integrated circuit and the conductive layer, and constitutes a semiconductor integrated circuit. The gist is that at least one of the layer, the layer covering the semiconductor integrated circuit, and the substrate is formed of a conductive polymer.

  One embodiment of the present invention includes a semiconductor integrated circuit, a conductive layer functioning as an antenna connected to the semiconductor integrated circuit, and one or more substrates covering the semiconductor integrated circuit and the conductive layer, and at least one of the substrates. One is a semiconductor device formed of a conductive polymer.

  Note that the substrate that sandwiches the semiconductor integrated circuit and the conductive layer may be formed of cellulose fiber and conductive polymer fiber.

  Another embodiment of the present invention is a semiconductor integrated circuit, a conductive layer functioning as an antenna connected to the semiconductor integrated circuit, one or a plurality of substrates covering the semiconductor integrated circuit and the conductive layer, a semiconductor integrated circuit, and a substrate An adhesive that adheres to each other, and the adhesive is formed of a composition having a conductive polymer.

  Another embodiment of the present invention includes a semiconductor integrated circuit, a conductive layer that functions as an antenna connected to the semiconductor integrated circuit, and a layer that covers the semiconductor integrated circuit. The layer that covers the semiconductor integrated circuit is formed using a conductive polymer. A semiconductor device is formed.

  Another embodiment of the present invention includes a semiconductor integrated circuit, a conductive layer that functions as an antenna connected to the semiconductor integrated circuit, and a layer that covers the semiconductor integrated circuit and the antenna. The semiconductor device is formed of a conductive polymer.

  According to another aspect of the present invention, a semiconductor integrated circuit, a connection terminal connected to the semiconductor integrated circuit, a layer formed over the semiconductor integrated circuit, covering a part of the connection terminal, and a conductive layer functioning as an antenna A connection terminal having a substrate to be formed and an anisotropic conductive adhesive including conductive particles for bonding the substrate and the semiconductor integrated circuit and electrically connecting the connection terminal and the conductive layer functioning as an antenna; A layer covering a part of the semiconductor device is formed of a conductive polymer. There are a plurality of connection terminals, the layer covering a part of the connection terminals is divided, and the layer covering a part of the divided connection terminals may not be in contact with two or more connection terminals.

  One embodiment of the present invention is a semiconductor integrated circuit, a connection terminal connected to the semiconductor integrated circuit, a substrate on which a conductive layer functioning as an antenna is formed, a layer covering a part of the conductive layer functioning as an antenna, An anisotropic conductive adhesive including conductive particles for bonding a substrate and a semiconductor integrated circuit and electrically connecting a conductive layer functioning as a connection terminal and an antenna, and a conductive layer functioning as an antenna The layer covering the part is a semiconductor device formed of a conductive polymer.

  According to another aspect of the present invention, a semiconductor integrated circuit, a connection terminal connected to the semiconductor integrated circuit, a substrate on which a conductive layer functioning as an antenna is formed, the substrate and the semiconductor integrated circuit are bonded, and the connection terminal and the antenna An anisotropic conductive adhesive comprising conductive particles that electrically connect conductive layers that function as an anisotropic conductive adhesive, and the anisotropic conductive adhesive is formed of a composition having a conductive polymer This is a semiconductor device.

Note that the volume resistivity of the conductive polymer is 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm. It is as follows.

The semiconductor device of the present invention has a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ^{3 on} one or both sides of the semiconductor integrated circuit. Since it has a substrate or layer using a conductive polymer of Ω · cm or more and 10 ⁶ Ω · cm or less, wireless communication with a reader / writer is possible, and breakdown or malfunction of a semiconductor integrated circuit due to static electricity is reduced. .

The semiconductor device of the present invention has a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably on one or both sides of the semiconductor integrated circuit. Since it has a layer using a conductive polymer of 10 ³ Ω · cm or more and 10 ⁶ Ω · cm or less, it is thin, wireless communication with a reader / writer is possible, and breakdown or malfunction of a semiconductor integrated circuit due to static electricity Is reduced. In addition, the amount of the substrate and the adhesive can be reduced, and the cost can be reduced.

Embodiments of the present invention will be described below with reference to the drawings.
However, the present invention can be implemented in many different forms, and those skilled in the art can easily understand that the forms and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment, a semiconductor device using a substrate formed of a conductive polymer is described with reference to FIGS.

As shown in FIG. 1A, in a semiconductor device of this embodiment mode, a chip 100 having a semiconductor element and a substrate 104 formed of a conductive polymer are bonded together using an adhesive 103. The substrate 104 formed of a conductive polymer covers a chip having a semiconductor element.

The conductive polymer forming the substrate 104 has a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 It is formed of an organic compound having conductivity of ⁶ Ω · cm or less. As an organic compound having a conductivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm. , Polythiophene, polypyrrole, polyaniline, polyphenylene vinylene, polyacene, polyacetylene, polyacrylonitrile, polyperinaphthalene, and the like. The substrate 104 formed of a conductive polymer may have flexibility.

A substrate formed of a conductive polymer having a volume resistivity of 10 ⁻³ Ω · cm or more covers a chip having a semiconductor element, so that radio waves or electromagnetic waves are not shielded, and the radio of a semiconductor device and a reader / writer Communication is possible. In addition, a substrate formed of a conductive polymer having a volume resistivity of 10 ¹² Ω · cm or less covers a chip having a semiconductor element, whereby damage to the semiconductor device due to static electricity can be prevented.

  As the adhesive 103, a composition in which an adhesive organic resin such as an acrylic resin, an epoxy resin, a silicone resin, or a phenol resin is mixed can be used.

  As the chip 100 having a semiconductor element, there is a chip having a thin film semiconductor element. In FIG. 1A, a chip 100 having a semiconductor element includes a substrate 111, a semiconductor integrated circuit 112 formed through an insulating layer 113 over the substrate 111, and a thin film transistor 114 included in the semiconductor integrated circuit 112. And an antenna 116 connected through the layer 115.

  In addition, in the semiconductor device illustrated in FIG. 1A, the insulating layer 115 and the antenna 116 of the chip 100 including a semiconductor element and the substrate 104 formed of a conductive polymer are fixed to each other with an adhesive 103, and the conductive polymer is used. The substrate 104 to be formed covers a chip having a semiconductor element.

  As the substrate 111, a glass substrate or a quartz substrate can be used. Also, a plastic substrate such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PES (polyethersulfone), polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, polyphthalamide, etc. is used. be able to. Furthermore, a flexible substrate can be used as the plastic substrate. Further, paper made of a fibrous material can be used.

  Note that a substrate in which an adhesive organic resin (an acrylic resin, an epoxy resin, a silicone resin, a phenol resin, or the like) is stacked on the plastic substrate as a layer formed of a thermoplastic material can be used. In this case, the substrate 104 formed of a conductive polymer is thermocompression bonded to the chip 100 having a semiconductor element using a thermal bonding method, and a part of the substrate 104 (adhesive organic resin as a layer formed of a thermoplastic material). After the substrate is melted, the substrate 104 can be fixed to the chip 100 having a semiconductor element by cooling.

  The insulating layer 113 is formed as a single layer or a stack using an inorganic compound by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. Typical examples of the inorganic compound include silicon oxide, silicon nitride oxide, and silicon oxynitride. In the case where the insulating layer is formed by stacking, silicon oxide, silicon nitride oxide, and silicon oxynitride may be stacked.

  Typical examples of thin film semiconductor elements include thin film transistors, capacitors, resistors, thin film diodes, and the like. As the thin film transistor 114, an inverted staggered thin film transistor, a forward staggered thin film transistor, a top gate thin film transistor, or the like can be used.

  The insulating layer 115 can be formed in a manner similar to that of the insulating layer 113. Moreover, you may form with organic compounds, such as an acrylic resin, a polyimide resin, a melamine resin, a polyester resin, a polycarbonate resin, a phenol resin, an epoxy resin, a diallyl phthalate resin, using the apply | coating method. Further, among the compounds composed of silicon, oxygen, and hydrogen formed using a siloxane polymer material typified by silica glass, an inorganic siloxane polymer containing a Si—O—Si bond, an alkyl siloxane polymer, an alkyl silsesquioxy, or the like. Even if the hydrogen bonded to silicon represented by sun polymer, hydrogenated silsesquioxane polymer, hydrogenated alkyl silsesquioxane polymer is formed by organic siloxane polymer substituted with organic groups such as methyl and phenyl Good.

  As the antenna 116, a conductive layer formed over the insulating layer 115 by a printing method, a method for etching a conductive thin film, a plating method, or the like can be used. The antenna 116 has one or more elements of Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Zr, and Ba. It can be formed of a conductive layer.

  FIG. 15 shows a top view of an antenna applicable to the present invention. The shape of the conductive layer functioning as an antenna uses electromagnetic induction due to a change in magnetic field density when a signal transmission method in a semiconductor device employs an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band). As shown in FIG. 15A, a rectangular coil shape 271 or a circular coil shape (for example, a spiral antenna) can be used. Further, as shown in FIG. 15B, a rectangular loop shape 272 or a circular loop shape can be used.

When a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied, the length of the conductive layer that functions as an antenna in consideration of the wavelength of an electromagnetic wave used for signal transmission Such a shape may be set as appropriate, and as shown in FIG. 15C, a linear dipole shape 273, a curved dipole shape, or a planar shape (for example, a patch antenna) can be used.

Further, a substrate 104 formed of a conductive polymer as shown in FIG. 1A may be further provided on the surface of the substrate 111. By sandwiching the semiconductor integrated circuit with a substrate formed of a conductive polymer, it is possible to avoid destruction of the semiconductor integrated circuit and obstacles in transmitting and receiving information due to static electricity from a plurality of directions.

  Note that a chip 101 having a semiconductor element obtained by removing the substrate 111 from the chip 100 having a semiconductor element as shown in FIG. Specifically, as illustrated in FIG. 1B, the insulating layer 113, the semiconductor integrated circuit 112 formed over the insulating layer 113, the wiring 117 of the thin film transistor 114 included in the semiconductor integrated circuit 112, and the insulating layer 115 are provided. An antenna 116 that is connected via a cable may be used.

  In the semiconductor device illustrated in FIG. 1B, the substrates 104a and 104b and the chip including the semiconductor element are fixed by the adhesive 103, and the substrates 104a and 104b cover the chip 101 including the semiconductor element. Note that, here, a mode in which the substrates 104a and 104b are fixed to a plurality of surfaces of a chip having a semiconductor element is shown; however, only one surface of a chip having a semiconductor element is fixed and an overlaid substrate is provided. May be. Further, a chip having a semiconductor element may be sandwiched between a single substrate by bending the substrate. A substrate formed of a conductive polymer is used as one or a plurality of substrates over which a chip having a semiconductor element is covered. Here, the adhesive 103 is provided around the chip 101 having a semiconductor element, and is formed of a conductive polymer on both the substrates 104a and 104b fixed to a plurality of surfaces of the chip 101 having a semiconductor element. Is used.

  Further, as shown in FIG. 1C, a silicon chip using a silicon substrate may be used as the chip 102 having a semiconductor element. Typically, the surface of the silicon wafer is insulated from a semiconductor integrated circuit 120 including a MOS transistor, a semiconductor element such as a capacitor, a resistor, and a diode, and a semiconductor element of the semiconductor integrated circuit 120 (here, the MOS transistor 122). And an antenna 124 connected through the layer 123.

  As the antenna 124, an antenna similar to the antenna 116 illustrated in FIG. 1A can be used as appropriate.

1C, similarly to the semiconductor device illustrated in FIG. 1B, the substrates 104a and 104b and the chip 102 including the semiconductor element are fixed to each other with the adhesive 103, and the substrates 104a and 104b are bonded to each other. A chip 102 having a semiconductor element is covered. Here, the adhesive 103 is provided around the chip 102 having a semiconductor element. In addition, a substrate formed of a conductive polymer is used for both of the substrates 104a and 104b fixed to a plurality of surfaces of the chip 102 having a semiconductor element.

  In addition, instead of the semiconductor device illustrated in FIGS. 1A to 1C, as illustrated in FIG. 17, the substrate 192 or 193 and the chip 101 including a semiconductor element are included, and one of the substrates 192 and 193 and the semiconductor are included. The chip 101 having elements may be fixed by the adhesive 103 and the substrate 192 and the substrate 193 may be fixed by the adhesive 103 on the outer edge of the chip 101 having semiconductor elements. Here, both the substrates 192 and 193 cover the chip 101 having a semiconductor element. In addition, a substrate formed of a conductive polymer is used for the substrates 192 and 193. Note that chips 100 and 102 having semiconductor elements as shown in FIGS. 1A and 1C can be used instead of the chip 101 having semiconductor elements.

  Further, instead of the semiconductor device illustrated in FIGS. 1A to 1C, as illustrated in FIG. 16A, a chip 101 having a semiconductor element is sandwiched between substrates 104a and 104b without using an adhesive. Also good. Substrates 104a and 104b are provided so as to cover the chip 101 having a semiconductor element. In addition, a substrate formed of a conductive polymer is used for one or both of the substrates 104a and 104b. Such a semiconductor device can be formed by an extrusion lamination method in which a film or sheet immediately after coming out of a flat die of an extruder and a chip having a semiconductor element are pressure-bonded with a roll or the like. Here, a substrate formed of a conductive polymer is used for both the substrates 104a and 104b. Note that chips 100 and 102 having semiconductor elements as shown in FIGS. 1A and 1C can be used instead of the chip 101 having semiconductor elements.

Further, as in the semiconductor device illustrated in FIG. 16B, a chip 101 including a semiconductor element may be provided inside a substrate 191 including a conductive polymer. Such a semiconductor device can be manufactured by mixing the chip 101 having a semiconductor element when the substrate 191 having a conductive polymer is formed. Typically, cellulose fiber and conductive polymer fiber are mixed to prepare a paper material, and when the paper material is made, a semiconductor device can be manufactured by mixing chips 101 having semiconductor elements.

  Cellulose fibers include wood pulp and linter pulp. Examples of the conductive polymer fiber include polythiophene fiber, polypyrrole fiber, polyaniline fiber, polyphenylene vinylene fiber, polyacene fiber, polyacetylene fiber, polyacrylonitrile fiber, and polyperiphthalene fiber. In addition to the cellulose fiber and the conductive polymer fiber, a size (bleeding inhibitor), a paper strength enhancer, and the like may be included. Note that chips 100 and 102 having semiconductor elements as shown in FIGS. 1A and 1C can be used instead of the chip 101 having semiconductor elements.

  As described above, the semiconductor device illustrated in FIGS. 16 and 17 can reduce the amount of adhesive used. Therefore, the thickness of the semiconductor device can be reduced and costs can be reduced.

Further, as shown in FIG. 2A, as an adhesive for fixing the chip 100 having a semiconductor element and the substrate 131, the volume resistivity is 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1Ω · An adhesive 132 formed of a conductive polymer having a size of cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm can be used.

  Examples of the adhesive 132 formed of a conductive polymer include a conductive polymer such as polythiophene, polypyrrole, polyaniline, polyphenylene vinylene, polyacene, polyacetylene, polyacrylonitrile, polyperiphthalene, acrylic resin, epoxy resin, silicone resin, and phenol resin. A composition in which an adhesive organic resin such as the above is mixed can be used.

  As the substrate 131, those listed in the substrate 111 can be used as appropriate.

  Similarly to the semiconductor device shown in FIG. 2A, two chips 101 each having a semiconductor element having no substrate as shown in FIG. The substrates 131a and 131b may be fixed. Here, since the adhesive 132 is provided around the chip 101 having a semiconductor element, it is possible to prevent breakdown and failure from static electricity in all directions.

  In this case, as the substrates 131a and 131b, those listed in the substrate 111 can be used as appropriate.

  Similarly to the semiconductor device shown in FIGS. 2A and 2B, a semiconductor formed of a silicon chip using a silicon substrate as shown in FIG. 2C by an adhesive 132 formed of a conductive polymer. A chip having an element may be fixed by two substrates 131a and 131b. Here, since the adhesive 132 is provided around the chip 102 having a semiconductor element, it is possible to prevent breakdown and failure from static electricity in all directions.

  2B and 2C, as shown in FIG. 2A, an adhesive 132 formed of a conductive polymer is used only on one surface of the chips 101 and 102 having semiconductor elements. Alternatively, the substrate 131a may be attached. Further, a substrate 131a is attached to one surface of the chips 101 and 102 having semiconductor elements by using an adhesive 132 formed of a conductive polymer, and the other surface of the chips 101 and 102 having semiconductor elements is attached to the other surface. The substrate 111 may be attached using the adhesive 103 shown in FIG.

  Further, in the semiconductor device illustrated in FIGS. 2A to 2C, a substrate formed of a conductive polymer may be used for the substrates 131, 131 a, and 131 b together with the adhesive 132.

  As described above, since the semiconductor device of this embodiment includes a substrate formed of a conductive polymer or an adhesive on a chip having a semiconductor element, radio waves or electromagnetic waves are shielded during communication with a reader / writer. It is possible to communicate without being broken, and it is possible to prevent a semiconductor integrated circuit from being broken or damaged due to static electricity.

(Embodiment 2)
In this embodiment mode, a semiconductor device including a layer formed using a conductive polymer in a chip including a semiconductor element will be described with reference to FIGS.

  The semiconductor device of this embodiment includes a chip 100 having a semiconductor element.

As shown in FIG. 3A, a chip 100 having a semiconductor element of this embodiment includes a substrate 111, a semiconductor integrated circuit 112 formed over the substrate 111 with an insulating layer 113 interposed therebetween, and a semiconductor integrated circuit 112. And an antenna 116 connected through a layer 141. Note that the layer 141 is provided over the semiconductor integrated circuit 112. The layer 141 is formed of a conductive polymer having a volume resistivity of 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm.

In addition, as shown in FIG. 3B, a chip 100 having a semiconductor element of this embodiment includes a substrate 111, a semiconductor integrated circuit 112 formed over the substrate 111 with an insulating layer 113 interposed therebetween, and a semiconductor integrated circuit. An antenna 116 connected to the thin film transistor 114 included in the circuit 112 through the insulating layer 115 and a layer 142 that covers the antenna 116 and the insulating layer 115 may be provided. Note that the layer 142 is formed using a conductive polymer of 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm.

By using a conductive polymer having a volume resistivity of 1 Ω · cm or more, preferably 10 ³ Ω · cm or more, wireless communication between the semiconductor device and the reader / writer is possible without shielding radio waves or electromagnetic waves. Moreover, it can avoid that the different conductive layers which contact | connect a layer short-circuit through a layer. In addition, by using a conductive polymer having a volume resistivity of 10 ⁹ Ω · cm or less, preferably 10 ⁶ or less, the semiconductor device can be prevented from being damaged by static electricity.

  In this embodiment mode, as a chip 100 having a semiconductor element, a semiconductor integrated circuit 112 including a thin film transistor 114 over a substrate and a semiconductor element having an antenna as shown in FIG. However, the present invention is not limited to this, and the present invention is not limited to this. A chip 101 having a semiconductor element not having a substrate as shown in FIG. 1B or a semiconductor made of a silicon chip as shown in FIG. The present invention can also be applied to the chip 102 having an element.

  As described above, since the semiconductor device of this embodiment uses a conductive polymer for a layer included in a chip having a semiconductor element, communication can be performed without shielding radio waves or electromagnetic waves when communicating with a reader / writer. It is possible to prevent electrostatic breakdown. In addition, since the number of substrates of the semiconductor device can be reduced, the semiconductor device can be thinned and cost can be reduced.

(Embodiment 3)
In this embodiment, a semiconductor device in which a chip having a semiconductor element and a substrate having an antenna are fixed will be described with reference to FIGS. Unlike the chips 100 to 102 having the semiconductor element described in Embodiment 1 or 2, the chip having the semiconductor element of this embodiment does not have an antenna.

As shown in FIG. 4A, in the semiconductor device of this embodiment, a chip 150 having a semiconductor element and a substrate 152 having an antenna 151 are fixed with an anisotropic conductive adhesive 153. Further, the connection terminal 118 and the antenna 151 provided on the chip 150 having a semiconductor element are electrically connected by conductive particles 154 dispersed in the anisotropic conductive adhesive 153.

As shown in FIG. 4A, a chip 150 having a semiconductor element of this embodiment includes a substrate 111, a semiconductor integrated circuit 112 formed over the substrate 111 with an insulating layer 113 interposed therebetween, and a semiconductor integrated circuit 112. And a connection terminal 118 connected to the thin film transistor 114 included in FIG. The layer 155 with the thin film transistor 114 and the connection terminal 118 interposed therebetween covers the semiconductor integrated circuit 112. The layer 155 is formed of a conductive polymer having a volume resistivity of 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm.

The layer 155 through the thin film transistor 114 and the connection terminal 118 is 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm, such as polythiophene, polypyrrole, polyaniline, polyphenylene vinylene, polyacene, polyacetylene, polyacrylonitrile, polyperiphthalene, or the like. A composition containing a conductive polymer of cm to 10 ⁶ Ω · cm is applied and baked. When the connection terminal 118 is covered with the composition when a composition containing a conductive polymer is applied, the composition is baked and then partially etched so that the connection terminal 118 is exposed and then connected to the thin film transistor 114. A layer 155 with the terminal 118 interposed therebetween may be formed.

  The connection terminal 118 can be formed in a manner similar to that of the antenna 116.

  In addition, the thin film transistor 114 and the antenna 151 are electrically connected through the connection terminal 118 and the conductive particles 154.

  The anisotropic conductive adhesive 153 is an adhesive resin containing dispersed conductive particles 154 (particle size is several nm to several tens of μm, preferably about 3 to 7 μm), such as an epoxy resin or a phenol resin. Is mentioned. The conductive particles 154 are formed of one element or a plurality of elements selected from gold, silver, copper, palladium, or platinum. Moreover, the particle | grains which have the multilayer structure of these elements may be sufficient. Furthermore, even when conductive particles having a thin film formed of one element selected from gold, silver, copper, palladium, or platinum or a plurality of elements are used on the surface of particles formed of resin, Good.

  Further, instead of the anisotropic conductive adhesive 153, the connection terminal 118 and the antenna 151 may be connected by a technique such as a reflow process using an anisotropic conductive film or a solder bump. Further, the connection terminal 118 and the antenna 151 may be connected by ultrasonic bonding.

As shown in FIG. 4B, a chip 156 having a semiconductor element of this embodiment includes a substrate 111, a semiconductor integrated circuit 112 formed over the substrate 111 with an insulating layer 113 interposed therebetween, and a semiconductor integrated circuit. A connection terminal 118 connected to the thin film transistor 114 included in the circuit 112 through the insulating layer 115, and a layer 157 covering a part of the connection terminal 118 and the insulating layer 115 are provided. A layer 157 covering a part of the connection terminal 118 and the insulating layer 115 covers the semiconductor integrated circuit 112 and is 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω. -It is formed with a conductive polymer of cm or less.

  The layer 157 covering a part of the connection terminal 118 and the insulating layer 115 can be formed in a manner similar to the layer 155 with the thin film transistor 114 and the connection terminal 118 interposed therebetween.

  In addition, the thin film transistor 114 and the antenna 151 are electrically connected through the connection terminal 118 and the conductive particles 154.

  Here, FIGS. 4C and 4D are top views on the connection terminal 118 side of the chips 150 and 156 having the semiconductor elements as shown in FIGS. 4A and 4B. As illustrated in FIG. 4C, the layers 155 and 157 may be provided so as to be in contact with different connection terminals 118 and 119. As shown in FIG. 4D, separated layers 155a, 155b, 157a, and 157b may be provided so as to be in contact with only one of the different connection terminals 118 and 119.

The layers 155 and 157 of the chips 150 and 156 having the semiconductor elements of the semiconductor layer device shown in FIGS. 4A to 4C have a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1Ω. Since it is formed of a conductive polymer of cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm, different connection terminals even if they are in contact with different connection terminals 118 and 119 It is possible to avoid short-circuiting each other. In addition, the layers 155 and 157 of the chips 150 and 156 having the semiconductor elements of the semiconductor layer device shown in FIGS. 4A to 4D can protect the semiconductor integrated circuit 112 from damage due to external static electricity. .

  Further, as shown in FIGS. 4A and 4B, a structure in which a layer or an insulating layer 115 through the thin film transistor 114 and the connection terminal 118 is formed over the semiconductor integrated circuit 112 and a connection terminal is formed thereover is not used. As shown in FIG. 5, a chip 158 having a semiconductor element such as a connection terminal 162 or 163 in a semiconductor integrated circuit 161 may be used. In this case, the layer 164 that covers part of the wiring of the semiconductor integrated circuit 161 is formed using a conductive polymer. The layer 164 that covers part of the wiring of the semiconductor integrated circuit 161 covers the thin film transistor 114.

The layer 164 that covers part of the wiring of the semiconductor integrated circuit 161 can be formed in a manner similar to the layer 155 with the thin film transistor 114 and the connection terminal 118 interposed therebetween.

  A chip 158 having a semiconductor element and a substrate 152 having an antenna 151 are fixed with an anisotropic conductive adhesive 153 in which conductive particles 154 are dispersed. In addition, the thin film transistor 114 and the antenna 151 are electrically connected to each other through the connection terminals 162 and 163 and the conductive particles 154.

In addition, as illustrated in FIG. 6, a chip 170 having a semiconductor element does not have a layer formed of a conductive polymer, and a substrate 152 having an antenna 151 has a layer 171 that covers a part of the antenna 151. Also good. Note that the layer 171 is a conductive polymer that covers the semiconductor integrated circuit 112 and has a volume resistivity of 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm. It is formed.

Typically, a chip 170 having a semiconductor element and a substrate 152 over which an antenna 151 and a layer 171 covering a part of the antenna are formed are fixed with an anisotropic conductive adhesive 153. A chip 170 having a semiconductor element is connected to a substrate 111, a semiconductor integrated circuit 112 formed on the substrate 111 via an insulating layer 113, and a thin film transistor 114 constituting the semiconductor integrated circuit 112 via an insulating layer 115. Connecting terminal 118 to be connected. Further, the thin film transistor 114 and the antenna 151 included in the semiconductor integrated circuit 112 are electrically connected by the conductive particles 154 dispersed in the anisotropic conductive adhesive 153 and the connection terminal 118. The layer 171 covering a part of the antenna 151 is formed of a conductive polymer having a volume resistivity of 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm. .

The layer 171 that covers part of the antenna 151 can be formed in a manner similar to the layer 155 with the thin film transistor 114 and the connection terminal 118 interposed therebetween.

Further, as shown in FIG. 7A, the substrate 172 having the antenna 151 has a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, Preferably, a substrate formed of a conductive polymer having a resistance of 10 ³ Ω · cm to 10 ⁶ Ω · cm may be used.

  Typically, a chip 170 having a semiconductor element and a substrate 172 on which an antenna 151 is formed are fixed with an anisotropic conductive adhesive 153. A chip 170 having a semiconductor element is connected to a substrate 111, a semiconductor integrated circuit 112 formed on the substrate 111 via an insulating layer 113, and a thin film transistor 114 constituting the semiconductor integrated circuit 112 via an insulating layer 115. Connecting terminal 118 to be connected. Further, the thin film transistor 114 and the antenna 151 included in the semiconductor integrated circuit 112 are electrically connected by the conductive particles 154 dispersed in the anisotropic conductive adhesive 153 and the connection terminal 118. The substrate 172 on which the antenna 151 is formed covers the antenna 151 and the semiconductor integrated circuit 112 and is formed of a conductive polymer. As the substrate 172 formed using a conductive polymer, the substrate 104 described in Embodiment 1 can be used as appropriate.

  As shown in FIG. 7B, the conductive polymer may be used for the anisotropic conductive adhesive 173 for fixing the substrate 182 having the antenna 151 and the chip 170 having a semiconductor element.

  Typically, a chip 170 having a semiconductor element and a substrate 182 over which an antenna 151 is formed are fixed with an anisotropic conductive adhesive 173. A chip 170 having a semiconductor element is connected to a substrate 111, a semiconductor integrated circuit 112 formed on the substrate 111 via an insulating layer 113, and a thin film transistor 114 constituting the semiconductor integrated circuit 112 via an insulating layer 115. Connecting terminal 118 to be connected. Further, the thin film transistor 114 and the antenna 151 included in the semiconductor integrated circuit 112 are electrically connected by the conductive particles 154 dispersed in the anisotropic conductive adhesive 173 and the connection terminal 118. As the anisotropic conductive adhesive 173, the adhesive 132 formed of the conductive polymer listed in Embodiment Mode 1 can be used as appropriate.

In this embodiment mode, the chip 170 including the semiconductor element including the semiconductor integrated circuit 112 formed using the thin film transistor 114 over the substrate 111 is illustrated as the chip 100 including the semiconductor element. However, the present invention is not limited thereto. However, the present invention can be applied to a chip having a semiconductor element without a substrate and a chip having a semiconductor element made of a silicon chip.

  As a typical example, as shown in FIG. 18A, a chip 195 having a semiconductor element without a substrate and a substrate 152 having an antenna 151 are fixed with an anisotropic conductive adhesive 153. Indicates. Further, the connection terminal 118 and the antenna 151 provided on the chip 195 having a semiconductor element are electrically connected by conductive particles 154 dispersed in the anisotropic conductive adhesive 153.

A chip 195 having a semiconductor element having no substrate includes a semiconductor integrated circuit 112 formed through an insulating layer 113, and a connection terminal 118 connected to the thin film transistor 114 included in the semiconductor integrated circuit 112 through a layer 155. Have In addition, the layer 155 through the thin film transistor 114 and the connection terminal 118 covers the semiconductor integrated circuit 112 and is formed of a conductive polymer.

  Note that the semiconductor device illustrated in FIG. 18A illustrates an example in which the chip including the semiconductor element of the semiconductor device illustrated in FIG. 4A is replaced with a chip 195 including a semiconductor element without a substrate. The chip 195 including a semiconductor element which does not have a substrate can be applied to the semiconductor device illustrated in FIGS. 4B and 5 to 7.

  As a representative example, as shown in FIG. 18B, a chip 196 having a semiconductor element made of a silicon chip and a substrate 152 having an antenna 151 are fixed with an anisotropic conductive adhesive 153. An example is shown. Further, the connection terminal 118 and the antenna 151 provided on the chip 196 having a semiconductor element are electrically connected by conductive particles 154 dispersed in the anisotropic conductive adhesive 153. Further, the substrate 152 having an antenna may be fixed to the flexible substrate 197 with an anisotropic conductive adhesive 153. As the flexible substrate 197, the flexible substrate listed for the substrate 111 can be used as appropriate.

  Note that the semiconductor device illustrated in FIG. 18B illustrates an example in which the chip including the semiconductor element of the semiconductor device illustrated in FIG. 4A is replaced with a chip 196 including a semiconductor element formed of a silicon chip. The present invention is not limited to this, and a chip 196 having a semiconductor element made of a silicon chip can be applied to the semiconductor devices shown in FIGS. 4B and 5 to 7.

  As described above, the semiconductor device of this embodiment includes a conductive polymer in a layer provided in a chip having a semiconductor element, a substrate having an antenna, or an adhesive that fixes a chip having a semiconductor element and a substrate having an antenna. Therefore, it is possible to communicate without blocking radio waves or electromagnetic waves when communicating with the reader / writer, and it is possible to prevent electrostatic breakdown.

(Embodiment 4)
In the semiconductor device described in any of Embodiments 2 and 3, the conductive polymer is further provided on the side opposite to the layers 141, 142, 155, 157, 164, and 171 formed of the conductive polymer through the semiconductor integrated circuits 112 and 161. A layer formed of or a substrate formed of a conductive polymer may be provided. Further, on the side opposite to the substrate 172 or the anisotropic conductive adhesive 173 formed of the conductive polymer via the semiconductor integrated circuits 112 and 161, a layer formed of the conductive polymer and a conductive polymer are formed. An anisotropic conductive adhesive using a conductive substrate or a conductive polymer may be provided. A specific example will be described using the semiconductor device in FIG. 3A; however, the present invention can also be applied to the other semiconductor devices illustrated in FIG. 3B and FIGS.

In the chip 100 including the semiconductor element illustrated in FIG. 3A, a layer 181 formed using a conductive polymer as illustrated in FIG. 8A may be provided between the substrate 111 and the insulating layer 113. Specifically, the substrate 111, the layer 181 formed of a conductive polymer provided over the substrate 111, the insulating layer 113 and the semiconductor integrated circuit 112 provided over the layer 181, and the thin film transistor constituting the semiconductor integrated circuit 112 A chip 180 having a semiconductor element having an antenna 116 connected to 114 through a layer 141 may be provided. Note that the layers 141 and 181 cover the semiconductor integrated circuit 112 and have a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, Preferably, it is formed with a conductive conductive polymer of 10 ³ Ω · cm to 10 ⁶ Ω · cm.

As a method for manufacturing a semiconductor device having such a structure, the layer 181 is formed over the substrate 111, the insulating layer 113 is formed over the layer 181, and the semiconductor integrated circuit 112 and the conductive polymer are formed over the insulating layer 113. There is a method for forming the layer 141 and the antenna 116.

The layer 181 has a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm, preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm. It is formed using a conductive polymer. Typically, a composition containing polythiophene, polypyrrole, polyaniline, polyphenylene vinylene, polyacene, polyacetylene, polyacrylonitrile, polyperiphthalene, or the like is applied and baked.

In addition, the semiconductor integrated circuit 112 formed over the insulating layer 113, the layer 141 formed with a conductive polymer, the antenna 116, and the substrate 111 have a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm. In the following, it may be formed by being fixed with an adhesive formed of a conductive polymer of preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm. As a result, the adhesive formed of the conductive polymer becomes the layer 181. As an adhesive formed of a conductive polymer, the adhesive 132 formed of a conductive polymer described in Embodiment 1 can be used.

Further, in the chip 100 having the semiconductor element shown in FIG. 3A, the volume resistivity is 10 ⁻³ Ω · cm or more and 10 ¹² Ω · cm or less on the surface of the substrate 111 as shown in FIG. A substrate 182 formed using a conductive polymer that is preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm may be provided. Specifically, a substrate 182 formed of a conductive polymer, a substrate 111 provided on the substrate 182, an insulating layer 113 and a semiconductor integrated circuit 112 provided on the substrate 111, and a thin film transistor constituting the semiconductor integrated circuit 112 The chip 100 may include a semiconductor element having the antenna 114 connected to the semiconductor layer 114 through the layer 141. Note that the substrate 182 and the layer 141 are formed using a conductive polymer.

Further, in the chip 100 having the semiconductor element shown in FIG. 3A, the volume resistivity is 10 ⁻³ Ω · cm or more and 10 ¹² Ω · cm or less on the surface of the substrate 111 as shown in FIG. 8C. Alternatively, the substrate 131 may be provided using an adhesive 183 formed of a conductive polymer of preferably 1 Ω · cm to 10 ⁹ Ω · cm, preferably 10 ³ Ω · cm to 10 ⁶ Ω · cm. Specifically, the substrate 131, the substrate 111 fixed to the substrate 131 with an adhesive 183, the insulating layer 113 and the semiconductor integrated circuit 112 provided on the substrate 111, and the thin film transistor 114 constituting the semiconductor integrated circuit 112, A chip 100 including a semiconductor element having an antenna 116 connected through the layer 141 may be included. Note that the adhesive 183 and the layer 181 are formed of a conductive polymer.

In the semiconductor device of this embodiment, a semiconductor integrated circuit is sandwiched between a substrate, a layer, or an adhesive formed of a conductive polymer. For this reason, it is possible to avoid the destruction of the semiconductor integrated circuit and the failure in transmitting and receiving information due to static electricity from two directions.

  In this embodiment, a manufacturing process of a semiconductor device capable of transmitting data without contact will be described with reference to FIGS.

  As shown in FIG. 9A, a separation layer 202 is formed over a substrate 201, an insulating layer 203 is formed over the separation layer 202, and a thin film transistor 204 and a conductive layer included in the thin film transistor 204 are insulated over the insulating layer 203. An interlayer insulating layer 205 is formed, and a source electrode and a drain electrode 206 connected to the semiconductor layer of the thin film transistor 204 are formed. Next, an insulating layer 207 is formed to cover the thin film transistor 204, the interlayer insulating layer 205, and the source and drain electrodes 206, and a conductive layer 208 connected to the source or drain electrode 206 through the insulating layer 207 is formed.

  As the substrate 201, a glass substrate, a quartz substrate, a metal substrate or a stainless steel substrate with an insulating layer formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like is used. Since there is no restriction on the size and shape of the substrate 201 listed above, for example, if a substrate having a side of 1 meter or more and a rectangular shape is used, the productivity is remarkably improved. Can do. This advantage is a great advantage compared to the case of using a circular silicon substrate.

The release layer 202 is formed by tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), sputtering, plasma CVD, coating, printing, or the like. An element selected from cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), silicon (Si), Alternatively, a layer formed of an alloy material containing an element as a main component or a compound material containing an element as a main component is formed as a single layer or a stacked layer. The crystal structure of the layer containing silicon may be any of amorphous, microcrystalline, and polycrystalline.

In the case where the separation layer 202 has a single-layer structure, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is preferably formed. Alternatively, a layer containing tungsten oxide or oxynitride, a layer containing molybdenum oxide or oxynitride, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum is formed. Note that the mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

In the case where the separation layer 202 has a stacked structure, preferably, a tungsten layer, a molybdenum layer, or a layer containing a mixture of tungsten and molybdenum is formed as a first layer, and tungsten, molybdenum, or a mixture of tungsten and molybdenum is formed as a second layer. An oxide, nitride, oxynitride, or nitride oxide is formed.

In the case of forming a stacked structure of a layer containing tungsten and a layer containing tungsten oxide as the separation layer 202, a layer containing tungsten is formed, and an insulating layer formed of an oxide is formed thereover. The fact that a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the insulating layer may be utilized. Furthermore, the surface of the layer containing tungsten is subjected to thermal oxidation treatment, oxygen plasma treatment, N ₂ O plasma treatment, treatment with a solution having strong oxidizing power such as ozone water, treatment with water to which hydrogen is added, and the like. Alternatively, a layer containing an oxide of tungsten may be formed. The same applies to the case where a layer containing tungsten nitride, oxynitride, and nitride oxide is formed. After a layer containing tungsten is formed, a silicon nitride layer, a silicon oxynitride layer, and a silicon nitride oxide layer are formed thereon. A layer may be formed.

The oxide of tungsten is represented by WOx. X is in the range of 2 ≦ x ≦ 3, when x is 2 (WO ₂ ), when x is 2.5 (W ₂ O ₅ ), when x is 2.75 (W ₄ O ₁₁ ), And x is 3 (WO ₃ ).

Further, according to the above process, the peeling layer 202 is formed so as to be in contact with the substrate 201, but the present invention is not limited to this process. An insulating layer serving as a base may be formed so as to be in contact with the substrate 201, and the peeling layer 202 may be provided so as to be in contact with the insulating layer.

The insulating layer 203 is formed as a single layer or a stacked layer using an inorganic compound by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. As a typical example of the inorganic compound, silicon oxide or silicon nitride can be given.

Furthermore, the insulating layer 203 may have a stacked structure. For example, the layers may be stacked using an inorganic compound, and typically, silicon oxide, silicon nitride oxide, and silicon oxynitride may be stacked.

The thin film transistor 204 includes a semiconductor layer having a source region, a drain region, and a channel formation region, a gate insulating layer, and a gate electrode.

  The semiconductor layer is a layer formed of a semiconductor having a crystal structure, and a non-single crystal semiconductor or a single crystal semiconductor can be used. In particular, it is preferable to use a crystalline semiconductor crystallized by heat treatment or a crystalline semiconductor crystallized by a combination of heat treatment and laser light irradiation. In the heat treatment, a crystallization method using a metal element such as nickel which has an action of promoting crystallization of a silicon semiconductor can be applied. Further, it is possible to form a metal oxide layer by oxidizing the surface of the separation layer at the interface between the separation layer 202 and the insulating layer 203 by heating in the crystallization process of the silicon semiconductor. Further, in the step of activating the impurity added to the semiconductor layer or the step of hydrogen extraction, the surface of the separation layer may be oxidized at the interface between the separation layer 202 and the insulating layer 203 to form a metal oxide layer. Is possible. Note that the hydrogen soaking process is a process in which, when an amorphous semiconductor is crystallized by irradiating laser light, the laser light is heated before the amorphous semiconductor is heated to release hydrogen contained in the amorphous semiconductor. is there.

In the case of crystallization by irradiating with laser light in addition to heat treatment, continuous wave laser light irradiation or repetition frequency is 10 MHz or more and pulse width is 1 nanosecond or less, preferably 1 to 100 picoseconds. By irradiating a certain high repetition frequency ultrashort pulse light, crystallization can be performed while continuously moving the melted zone where the crystalline semiconductor is melted in the irradiation direction of the laser light. By such a crystallization method, a crystalline semiconductor having a large particle diameter and a crystal grain boundary extending in one direction can be obtained. By adjusting the carrier drift direction to the direction in which the crystal grain boundary extends, the field-effect mobility in the transistor can be increased. For example, it is possible to realize the above 400cm ² / V · sec.

When the crystallization process is performed using a crystallization process at a heat resistant temperature (about 600 ° C.) or lower of the glass substrate, a large-area glass substrate can be used. Therefore, a large amount of semiconductor devices can be manufactured per substrate, and the cost can be reduced.

Alternatively, the semiconductor layer may be formed by performing a crystallization step by heating at a temperature higher than the heat resistant temperature of the glass substrate. Typically, a quartz substrate is used as the substrate 201 having an insulating surface, and an amorphous or microcrystalline semiconductor is heated at 700 ° C. or higher to form a semiconductor layer. As a result, a semiconductor with high crystallinity can be formed. Therefore, a thin film transistor that has favorable characteristics such as response speed and mobility and can operate at high speed can be provided.

The gate insulating layer is formed using an inorganic insulator such as silicon oxide or silicon oxynitride.

  The gate electrode can be formed of a metal or a polycrystalline semiconductor to which an impurity of one conductivity type is added. In the case of using a metal, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), aluminum (Al), or the like can be used. Alternatively, a metal nitride obtained by nitriding a metal can be used. Or it is good also as a structure which laminated | stacked the 1st layer which consists of the said metal nitride, and the 2nd layer which consists of the said metal. In the case of a laminated structure, the end portion of the first layer may have a shape protruding outward from the end portion of the second layer. At this time, a barrier metal can be formed by using a metal nitride for the first layer. That is, the metal of the second layer can be prevented from diffusing into the gate insulating layer and the semiconductor layer below it.

  A thin film transistor including a combination of a semiconductor layer, a gate insulating layer, a gate electrode, and the like can employ various structures such as a single drain structure, an LDD (low concentration drain) structure, and a gate overlap drain structure. Here, a thin film transistor having a single drain structure is shown. Further, equivalently, a multi-gate structure in which transistors to which a gate voltage of the same potential is applied are connected in series, a dual gate structure in which a semiconductor layer is sandwiched between gate electrodes, and a gate electrode on an insulating layer 203 And an inverted staggered thin film transistor in which a gate insulating layer and a semiconductor layer are formed over the gate electrode can be used.

  The source and drain electrodes 206 are formed of a low resistance material such as aluminum (Al), such as a laminated structure of titanium (Ti) and aluminum (Al), a laminated structure of molybdenum (Mo) and aluminum (Al), titanium ( It is preferably formed in combination with a barrier metal using a refractory metal material such as Ti) or molybdenum (Mo).

  The interlayer insulating layer 205 and the insulating layer 207 can be formed by applying and baking polyimide, acrylic, or siloxane polymer. Alternatively, a single layer or a stacked layer may be formed using an inorganic compound by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. Typical examples of the inorganic compound include silicon oxide, silicon nitride, and silicon oxynitride.

  Further, any structure may be used as long as it is a semiconductor element that can function as a switching element instead of the thin film transistor 204. Typical examples of the switching element include MIM (Metal-Insulator-Metal), a diode, and the like.

  Next, as illustrated in FIG. 9B, a conductive layer 211 is formed over the conductive layer 208. Here, a composition having gold particles is printed by a printing method, heated at 200 ° C. for 30 minutes, and the composition is baked to form the conductive layer 211.

  Next, as illustrated in FIG. 9C, a layer 212 that covers end portions of the insulating layer 207 and the conductive layer 211 is formed using a conductive polymer. Here, the insulating layer 207 and the layer 212 that covers end portions of the conductive layer 211 are formed using an epoxy resin and polyaniline. The composition of epoxy resin and polyaniline is applied by spin coating and heated at 160 ° C. for 30 minutes, and then the layer covering the conductive layer 211 is removed to expose the conductive layer 211 and have a thickness of 1 to 20 μm. Preferably, a layer 212 having a thickness of 5 to 10 μm is formed. Here, a stacked body from the insulating layer 203 to the layer 212 is referred to as an element formation layer 210.

  Next, as illustrated in FIG. 9D, the insulating layers 203, 205, and 207, and the layer 212 are irradiated with laser light 213 in order to easily perform the subsequent peeling step, and the process illustrated in FIG. An opening 214 as shown is formed. Next, the adhesive member 215 is bonded to the layer 212. As a laser beam irradiated for forming the opening 214, a laser beam having a wavelength absorbed by the insulating layers 203, 205, 207, or 212 is preferable. Typically, laser light in an ultraviolet region, a visible region, or an infrared region is appropriately selected and irradiated.

Examples of laser oscillators that can oscillate such laser light include excimer laser oscillators such as KrF, ArF, and XeCl, gas laser oscillators such as He, He—Cd, Ar, He—Ne, HF, and CO ₂ , Crystals of YAG, GdVO ₄ , YVO ₄ , YLF, YAlO _3, etc. doped with Cr, Nd, Er, Ho, Ce, Co, Ti or Tm, solid laser oscillators such as glass, ruby, GaN, GaAs, GaAlAs A semiconductor laser oscillator such as InGaAsP can be used. In the solid-state laser oscillator, it is preferable to appropriately apply the fundamental wave to the fifth harmonic. As a result, the insulating layers 203, 205, 207, and 212 absorb the laser light and melt to form openings.

Note that by eliminating the step of irradiating the insulating layers 203, 205, 207, and 212 with the laser light, throughput can be improved.

  Next, as shown in FIG. 10A, in the metal oxide layer formed at the interface between the separation layer 202 and the insulating layer 203, the substrate 201 having the separation layer and a part 221 of the element formation layer are physically attached. Peel off. Physical means refers to mechanical means or mechanical means, and means to change some mechanical energy (mechanical energy). The physical means is typically applying mechanical force (for example, a process of peeling with a human hand or a grip jig, or a process of separating while rotating the roller with the roller as a fulcrum).

  The above peeling process has a layer that does not shrink by heat treatment, a layer that shrinks by heat treatment, and an intermediate layer between them. By performing heat treatment when the peeling process is completed or during the peeling process, the overstress state is intermediate. It is characterized in that it is applied in the layer or in the vicinity thereof, and then peeled off in the intermediate layer or in the vicinity thereof by applying a stimulus.

  In this embodiment, the layer that does not shrink by heat treatment is the peeling layer 202, the layer that shrinks by heat treatment is the insulating layer 203 or the layer 212, and an intermediate layer between the layer that does not shrink by heat treatment and the layer that shrinks by heat treatment The layer is formed at the interface between the peeling layer 202 and the insulating layer 203. As a typical example, when a tungsten layer is used as the peeling layer 202, silicon oxide or silicon nitride is used as the insulating layer 203, and an epoxy resin and polyaniline composition is used as the layer 212, crystallization of an amorphous silicon film or In the heat treatment such as impurity activation and hydrogen extraction, the peeling layer 202 does not shrink, but the insulating layer 203 and the layer 212 shrink, and a tungsten oxide layer (WOx, 2x) is formed at the interface between the peeling layer 202 and the insulating layer 203. ≦ x ≦ 3) is formed. Since the tungsten oxide layer is brittle, it is easily separated by the physical means. As a result, a part 221 of the element formation layer can be peeled from the substrate 201 by the physical means.

In this embodiment, a method is used in which a metal oxide film is formed between the release layer and the insulating layer, and the element formation layer 210 is peeled off by physical means in the metal oxide film. A transparent substrate is used for the substrate, an amorphous silicon layer containing hydrogen is used for the peeling layer, and after the step of FIG. 9E, the amorphous silicon film is irradiated with laser light from the substrate side. A method of vaporizing hydrogen contained in the substrate and separating between the substrate and the separation layer can be used.

  Further, after the step of FIG. 9E, a method of mechanically polishing and removing the substrate or a method of removing the substrate using a solution that dissolves the substrate such as HF can be used. In this case, the release layer may not be used.

9E, before the adhesive member 215 is attached to the layer 212, a halogen fluoride gas such as NF ₃ , BrF ₃ , or ClF ₃ is introduced into the opening 214, and the release layer is formed of the halogen fluoride gas. After the etching and removal by the step, a method of attaching the adhesive member 215 to the layer 212 and peeling the element formation layer 210 from the substrate can be used.

In FIG. 9E, before bonding the adhesive member 215 to the layer 212, a halogen fluoride gas such as NF ₃ , BrF ₃ , or ClF ₃ is introduced into the opening 214 to partially cover the release layer. After etching and removing with a halogenated gas, a method in which an adhesive member 215 is attached to the layer 212 and the element formation layer 210 is peeled from the substrate by physical means can be used.

  Next, as illustrated in FIG. 10B, a flexible substrate 222 is attached to the insulating layer 203 of the part 221 of the element formation layer. Next, the adhesive member 215 is peeled off from the part 221 of the element formation layer. Here, as the flexible substrate 222, a film formed of polyaniline by a casting method is used.

  Next, as shown in FIG. 10C, the flexible substrate 222 is attached to the UV sheet 231 of the dicing frame 232. Since the UV sheet 231 has adhesiveness, the flexible substrate 222 is fixed on the UV sheet 231. After that, the conductive layer 211 may be irradiated with laser light to improve the adhesion between the conductive layer 211 and the conductive layer 208.

  Next, as illustrated in FIG. 10D, the connection terminal 233 is formed over the conductive layer 211. By forming the connection terminal 233, it is possible to easily perform alignment and adhesion with a conductive layer which functions as an antenna later.

Next, as illustrated in FIG. 11A, a part 221 of the element formation layer is divided. Here, the part 221 of the element formation layer and the flexible substrate 222 are irradiated with laser light 234, and the part 221 of the element formation layer is divided into a plurality of portions as illustrated in FIG. As the laser beam 234, the laser beam described in the laser beam 213 can be selected as appropriate and applied. Here, it is preferable to select laser light that can be absorbed by the insulating layers 203, 205, 206, the layer 212, and the flexible substrate 222. Note that, here, a part of the element formation layer is divided into a plurality of parts by using a laser cut method, but a dicing method, a scribing method, or the like can be appropriately used instead of this method. As a result, the divided element formation layers are denoted as thin film integrated circuits 242a and 242b.

  Next, as shown in FIG. 11C, the UV sheet of the dicing frame 232 is irradiated with UV light to reduce the adhesive strength of the UV sheet 231, and then the UV sheet 231 is supported by the expander frame 244. . At this time, the width of the groove 241 formed between the thin film integrated circuits 242a and 242b can be increased by supporting the UV sheet 231 with the expander frame 244 while extending the UV sheet 231. Note that the enlarged groove 246 is preferably matched with the size of the antenna substrate to be bonded to the thin film integrated circuits 242a and 242b later.

  Next, as shown in FIG. 12A, a flexible substrate 256 having conductive layers 252a and 252b functioning as antennas and thin film integrated circuits 242a and 242b are used with anisotropic conductive adhesives 255a and 255b. And paste them together. Note that an opening is provided in the flexible substrate 256 including the conductive layers 252a and 252b functioning as antennas so that parts of the conductive layers 252a and 252b are exposed. Therefore, the conductive layers 252a and 252b functioning as an antenna and the connection terminals of the thin film integrated circuits 242a and 242b are connected to the conductive particles 254a and 254b included in the anisotropic conductive adhesives 255a and 255b. , Paste together while aligning.

  In this embodiment, the anisotropic conductive adhesives 255a and 255b are used to connect the connection terminals of the conductive layers 252a and 252b and the thin film integrated circuits 242a and 242b. Instead, anisotropic conductive films or solder bumps are used. A technique such as a reflow process using the above may be used. Alternatively, the connection terminals of the conductive layers 252a and 252b and the thin film integrated circuits 242a and 242b may be connected by ultrasonic bonding.

  Here, the conductive layer 252a functioning as an antenna and the thin film integrated circuit 242a are connected by the conductive particles 254a in the anisotropic conductive adhesive 255a, and the conductive layer 252b functioning as an antenna and the thin film integrated circuit 242b are They are connected by conductive particles 254b in the anisotropic conductive adhesive 255b.

  Next, as illustrated in FIG. 12B, the conductive layers 252a and 252b functioning as antennas and the thin film integrated circuits 242a and 242b are separated in regions. Here, the insulating layer 253 and the flexible substrate 256 are divided by a laser cut method in which laser light 261 is irradiated.

  Through the above steps, semiconductor devices 262a and 262b capable of transmitting data without contact can be manufactured as illustrated in FIG.

  Note that in FIG. 12A, a flexible substrate 256 including conductive layers 252a and 252b functioning as antennas and thin film integrated circuits 242a and 242b are attached to each other using anisotropic conductive adhesives 255a and 255b. After that, a flexible substrate is provided so as to seal the flexible substrate 256 and the thin film integrated circuits 242a and 242b. As shown in FIG. 12B, conductive layers 252a and 252b functioning as antennas and a thin film integrated circuit are provided. In a region where the circuits 242a and 242b are not formed, the semiconductor device 264 as illustrated in FIG. 12D may be manufactured by irradiation with the laser light 261. In this case, since the thin film integrated circuit is sealed by the divided flexible substrates 256 and 263, deterioration of the thin film integrated circuit can be suppressed.

  Through the above process, a thin and lightweight semiconductor device can be manufactured with high yield. In addition, since a layer formed using a conductive polymer is provided, a semiconductor device that can prevent destruction or malfunction of the semiconductor integrated circuit due to static electricity while suppressing shielding of radio waves and electromagnetic waves can be manufactured.

A structure of a semiconductor device capable of transmitting data in a non-contact manner according to the above embodiment will be described with reference to FIG.

The semiconductor device of this embodiment is roughly composed of an antenna unit 2001, a power supply unit 2002, and a logic unit 2003.

The antenna unit 2001 includes an antenna 2011 for receiving external signals and transmitting data. As a signal transmission method in the semiconductor device, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be appropriately selected by the practitioner in consideration of the intended use, and an optimal antenna may be provided according to the transmission method.

The power supply unit 2002 includes a rectifier circuit 2021 that generates power based on a signal received from the outside via the antenna 2011, a storage capacitor 2022 that holds the generated power supply, and a constant voltage circuit 2023.

The logic unit 2003 includes a demodulation circuit 2031 that demodulates the received signal, a clock generation / correction circuit 2032 that generates a clock signal, each code recognition and determination circuit 2033, and a signal for reading data from the memory based on the received signal. It has a memory controller 2034 to be created, a modulation circuit 2035 for putting the encoded signal on the received signal, an encoding circuit 2037 for encoding the read data, and a mask ROM 2038 for holding the data. Note that the modulation circuit 2035 includes a modulation resistor 2036.

The codes recognized and determined by each code recognition and determination circuit 2033 are a frame end signal (EOF, end of frame), a frame start signal (SOF, start of frame), a flag, a command code, a mask length (mask length), and a mask. For example, a value (mask value). Each code recognition and determination circuit 2033 also includes a cyclic redundancy check (CRC) function for identifying a transmission error.

The application of the semiconductor device capable of transmitting data in a non-contact manner shown in the above embodiment is wide. For example, banknotes, coins, securities, bearer bonds, certificate documents (driver's license, resident's card, etc. 14 (A)), packaging containers (wrapping paper, bottles, etc., see FIG. 14 (C)), recording media (DVD software, video tape, etc., see FIG. 14 (B)), vehicles (bicycles, etc. 14D), personal items (such as bags and glasses), foods, plants, animals, human bodies, clothing, daily necessities, electronic devices, etc. and luggage tags (FIG. 14E) (See FIG. 14F) and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions, television receivers, television receivers), mobile phones, and the like.

The semiconductor device 9210 of this embodiment is fixed to an article by mounting on a printed board, pasting on a surface, embedding, and the like. For example, a book is affixed to paper, and a package made of an organic resin is affixed to the organic resin and fixed to each article. Since the semiconductor device 9210 of this embodiment is small, thin, and lightweight, it does not impair the design of the article itself even after being fixed to the article. In addition, by providing the semiconductor device 9210 of this embodiment on banknotes, coins, securities, bearer bonds, certificates, etc., an authentication function can be provided, and if this authentication function is used, forgery is prevented. be able to. Also, by providing the semiconductor device of this embodiment in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of systems such as inspection systems. .

It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing and the top view which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device of this invention. It is sectional drawing which showed the manufacturing process of the semiconductor device of this invention. It is the figure which showed the semiconductor device of this invention. It is the figure which showed the example of application of the semiconductor device of this invention. It is the top view which showed the shape of the antenna applicable to this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention. It is sectional drawing which showed the semiconductor device of this invention.

Claims (10)

A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
One or more substrates covering the semiconductor integrated circuit and the conductive layer;
Have
At least one of the substrates is formed of a conductive polymer.   2. The semiconductor device according to claim 1, wherein the one or more substrates covering the semiconductor integrated circuit and the conductive layer are formed of cellulose fibers and conductive polymer fibers. A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
One or more substrates covering the semiconductor integrated circuit and the conductive layer;
An adhesive that bonds the semiconductor integrated circuit and the one or more substrates;
Have
The adhesive is formed of a composition having a conductive polymer. A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
A layer covering the semiconductor integrated circuit,
The semiconductor device is characterized in that the layer covering the semiconductor integrated circuit is formed of a conductive polymer. A semiconductor integrated circuit;
A conductive layer functioning as an antenna connected to the semiconductor integrated circuit;
A layer covering the semiconductor integrated circuit and the conductive layer functioning as an antenna,
The semiconductor device is characterized in that a layer covering the semiconductor integrated circuit and the conductive layer functioning as an antenna is formed of a conductive polymer. A semiconductor integrated circuit, and a connection terminal connected to the semiconductor integrated circuit;
A layer formed on the semiconductor integrated circuit and covering a part of the connection terminal;
A substrate on which a conductive layer functioning as an antenna is formed;
An anisotropic conductive adhesive containing conductive particles for bonding the substrate and the semiconductor integrated circuit and electrically connecting the conductive layer functioning as the connection terminal and the antenna;
Have
The semiconductor device is characterized in that a layer covering a part of the connection terminal is formed of a conductive polymer.   7. The plurality of connection terminals according to claim 6, wherein a layer covering a part of the connection terminals is divided, and a layer covering a part of the divided connection terminals is in contact with two or more connection terminals. A semiconductor device characterized by not. A semiconductor integrated circuit, and a connection terminal connected to the semiconductor integrated circuit;
A substrate on which a conductive layer functioning as an antenna is formed;
A layer covering a part of the conductive layer functioning as the antenna;
An anisotropic conductive adhesive containing conductive particles for bonding the substrate and the semiconductor integrated circuit and electrically connecting the conductive layer functioning as the connection terminal and the antenna;
Have
The semiconductor device is characterized in that a layer covering a part of the conductive layer functioning as the antenna is formed of a conductive polymer. A semiconductor integrated circuit, and a connection terminal connected to the semiconductor integrated circuit;
A substrate on which a conductive layer functioning as an antenna is formed;
An anisotropic conductive adhesive containing conductive particles for bonding the substrate and the semiconductor integrated circuit and electrically connecting the conductive layer functioning as the connection terminal and the antenna;
Have
The said anisotropic conductive adhesive is formed with the composition which has a conductive polymer, The semiconductor device characterized by the above-mentioned. 10. The semiconductor device according to claim 1, wherein the conductive polymer has a volume resistivity of 10 ⁻³ Ω · cm to 10 ¹² Ω · cm.

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