JP2007214271A - Substrate bonding method and semiconductor device - Google Patents

Substrate bonding method and semiconductor device Download PDF

Info

Publication number
JP2007214271A
JP2007214271A JP2006031251A JP2006031251A JP2007214271A JP 2007214271 A JP2007214271 A JP 2007214271A JP 2006031251 A JP2006031251 A JP 2006031251A JP 2006031251 A JP2006031251 A JP 2006031251A JP 2007214271 A JP2007214271 A JP 2007214271A
Authority
JP
Japan
Prior art keywords
substrate
bonding
substrates
film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006031251A
Other languages
Japanese (ja)
Inventor
Kazuma Tanida
一真 谷田
Teruhito Matsui
輝仁 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZYCUBE KK
ZyCube Co Ltd
Original Assignee
ZYCUBE KK
ZyCube Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZYCUBE KK, ZyCube Co Ltd filed Critical ZYCUBE KK
Priority to JP2006031251A priority Critical patent/JP2007214271A/en
Publication of JP2007214271A publication Critical patent/JP2007214271A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
    • H01L2224/10122—Auxiliary members for bump connectors, e.g. spacers being formed on the semiconductor or solid-state body to be connected
    • H01L2224/10135—Alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/81139—Guiding structures on the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
    • H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate bonding method for achieving a high-reliability junction while eliminating the occurrence of dew condensation in a cavity and that of package cracks during mounting in reflow or the like, and also, eliminating the occurrence of cracks in a glass substrate and semiconductor substrate without executing press-bonding; and to provide a semiconductor device. <P>SOLUTION: The substrate bonding method includes an installation step for providing a bonding member layer at the scheduled part to bond two substrates in-between, a heating step for heating the bonding member layer with a light beam while emitting the light beam transmitting through the substrate from at least one outside of the two substrates, and a bonding step for bonding the two substrates with the heated bonding member layer. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は基板の接合方法および半導体装置に関し、特に、２つの基板を高い気密性を保持して貼り合わせる基板の接合方法、およびこの基板の接合方法に基づいて作られる接合部を備えた半導体装置に関する。   The present invention relates to a substrate bonding method and a semiconductor device, and more particularly to a substrate bonding method in which two substrates are bonded to each other while maintaining high airtightness, and a semiconductor device including a bonding portion formed based on the substrate bonding method. About.

従来の半導体装置の接合構造は例えば特許文献１に開示されている。特許文献１による受光センサの実装構造体は、当該特許公報の図１に示されるごとく、下側の基板である半導体ウェハ上に受光センサとマイクロレンズを作り、当該半導体ウェハには光透過性保護部材が接合されている。半導体ウェハと光透過性保護部材は、受光センサとマイクロレンズを囲むように設けられた封止部材で接合される。   A conventional junction structure of a semiconductor device is disclosed in Patent Document 1, for example. As shown in FIG. 1 of the patent publication, a mounting structure of a light receiving sensor according to Patent Document 1 is formed with a light receiving sensor and a microlens on a semiconductor wafer which is a lower substrate. The members are joined. The semiconductor wafer and the light transmissive protective member are joined by a sealing member provided so as to surround the light receiving sensor and the microlens.

従来の半導体装置の代表的な基板の接合方法を図１２を参照して詳しく説明する。図１２は、半導体ウェハと光透過性保護部材を接合する構造を作るための状態を示す部分縦断面図である。図１２において、下側に位置する部材１０１は半導体基板であり、上側に位置する部材１０２はガラス基板である。半導体基板１０１は上記半導体ウェハに相当し、ガラス基板１０２は上記光透過性保護部材に相当する。半導体基板１０１の表面には受光素子領域１０３が形成されている。この受光素子領域１０３は、固体撮像装置を形成し、受光センサとマイクロレンズを含む。半導体基板１０１とガラス基板１０２は、水平であって、かつ隙間をあけて平行に配置されている。半導体基板１０１とガラス基板１０２との間には所定の箇所に接着樹脂１０４が配置されている。接着樹脂１０４は、上記封止部材になる部材である。接着樹脂１０４は、受光素子領域１０３の全周囲を囲むように所定パターンで配置される。接着樹脂１０４が最終的に封止部材になると、受光素子領域１０３の周囲の空間には、半導体基板１０１とガラス基板１０２によって挟まれた密閉状態のキャビティ（空洞）が形成される。   A typical substrate bonding method of a conventional semiconductor device will be described in detail with reference to FIG. FIG. 12 is a partial longitudinal sectional view showing a state for making a structure for joining a semiconductor wafer and a light-transmitting protective member. In FIG. 12, the member 101 located on the lower side is a semiconductor substrate, and the member 102 located on the upper side is a glass substrate. The semiconductor substrate 101 corresponds to the semiconductor wafer, and the glass substrate 102 corresponds to the light transmissive protective member. A light receiving element region 103 is formed on the surface of the semiconductor substrate 101. The light receiving element region 103 forms a solid-state imaging device and includes a light receiving sensor and a microlens. The semiconductor substrate 101 and the glass substrate 102 are horizontal and arranged in parallel with a gap. An adhesive resin 104 is disposed at a predetermined location between the semiconductor substrate 101 and the glass substrate 102. The adhesive resin 104 is a member that becomes the sealing member. The adhesive resin 104 is arranged in a predetermined pattern so as to surround the entire periphery of the light receiving element region 103. When the adhesive resin 104 finally becomes a sealing member, a sealed cavity (cavity) sandwiched between the semiconductor substrate 101 and the glass substrate 102 is formed in the space around the light receiving element region 103.

上記において、半導体基板１０１は加熱ステージ１０５の上に搭載されている。この状態の半導体基板１０１の上に接着樹脂１０４を介してガラス基板１０２が置かれる。半導体基板１０１とガラス基板１０２は接着樹脂１０４によって貼り合わされた関係にある。ガラス基板１０２の上にはさらに押え加熱部材１０６が配置される。   In the above, the semiconductor substrate 101 is mounted on the heating stage 105. A glass substrate 102 is placed on the semiconductor substrate 101 in this state via an adhesive resin 104. The semiconductor substrate 101 and the glass substrate 102 are in a relationship of being bonded by an adhesive resin 104. A presser heating member 106 is further disposed on the glass substrate 102.

上記の構造において、半導体基板１０１とガラス基板１０２を接合する際、押え加熱部材１０６によって半導体基板１０１とガラス基板１０２を圧着させ、かつ加熱ステージ１０５と押さえ加熱部材１０６に熱を発生させる。加熱ステージ１０５で発生した熱は半導体基板１０１を伝導し、接着樹脂１０４に与えられる。押え加熱部材１０６で発生した熱はガラス基板１０２を伝導し、接着樹脂１０４に与えられる。接着樹脂１０４は、圧着状態で、半導体基板１０１からの熱とガラス基板１０２からの熱によって加熱され、半導体基板１０１とガラス基板１０２を接合する。   In the above structure, when the semiconductor substrate 101 and the glass substrate 102 are bonded, the semiconductor substrate 101 and the glass substrate 102 are pressure-bonded by the pressing heating member 106, and heat is generated in the heating stage 105 and the pressing heating member 106. The heat generated in the heating stage 105 is conducted through the semiconductor substrate 101 and given to the adhesive resin 104. The heat generated by the presser heating member 106 is conducted through the glass substrate 102 and given to the adhesive resin 104. The adhesive resin 104 is heated by heat from the semiconductor substrate 101 and heat from the glass substrate 102 in a pressure-bonded state, and bonds the semiconductor substrate 101 and the glass substrate 102.

従来の半導体装置の基板の接合方法によれば、半導体基板１０１に形成された受光素子領域１０３に含まれる回路素子等の耐熱性が低い場合には金属接合等の高温接合を行うことができないため、前述のごとく接着樹脂１０４を利用した低温圧着を用いている。
特開２００１−３５１９９７号公報 According to the conventional method for bonding substrates of semiconductor devices, high-temperature bonding such as metal bonding cannot be performed when the heat resistance of the circuit elements included in the light receiving element region 103 formed on the semiconductor substrate 101 is low. As described above, low-temperature pressure bonding using the adhesive resin 104 is used.
JP 2001-351997 A

低温圧着を利用した従来の半導体装置の基板の接合方法によれば、接着樹脂１０４の接合強度は金属接合等に比較すると低く、さらに水分等を吸収しやすいため、キャビティ内で結露を生じたり、リフロー等での実装時にパッケージクラックを起こすという問題があった。また、接合に使用される接着樹脂１０４そのものの劣化も早く、信頼性に問題があった。さらに、圧着時に高荷重の負荷を与えるために、ガラス基板１０２や半導体基板１０１にクラックが発生するという問題もあった。   According to the conventional method for bonding substrates of semiconductor devices using low-temperature pressure bonding, the bonding strength of the adhesive resin 104 is lower than that of metal bonding or the like, and more easily absorbs moisture or the like. There was a problem of causing package cracks during mounting by reflow or the like. Further, the adhesive resin 104 itself used for bonding deteriorates quickly, and there is a problem in reliability. Furthermore, there is a problem that cracks are generated in the glass substrate 102 and the semiconductor substrate 101 in order to apply a heavy load during pressure bonding.

本発明の目的は、上記の課題に鑑み、接着樹脂を利用した低温圧着等で発生したキャビティ内の結露の発生や、リフロー等での実装時におけるパッケージクラックの発生をなくし、かつ圧着をなくしてガラス基板や半導体基板でのクラックの発生をなくすと共に、接合部の信頼性の高い基板の接合方法および半導体装置を提供することにある。   In view of the above-mentioned problems, the object of the present invention is to eliminate the occurrence of dew condensation in the cavity caused by low-temperature pressure bonding using an adhesive resin, the generation of package cracks during mounting by reflow, etc. An object of the present invention is to provide a method for bonding a substrate and a semiconductor device, in which generation of cracks in a glass substrate or a semiconductor substrate is eliminated and the reliability of a bonded portion is high.

本発明に係る基板の接合方法および半導体装置は、上記の目的を達成するために、次のように構成される。   In order to achieve the above object, a substrate bonding method and a semiconductor device according to the present invention are configured as follows.

第１の基板の接合方法（請求項１に対応）は、２枚の基板の間においてこれらの基板を接合する予定部位の箇所に接合部材層を設ける設置ステップと、２枚の基板の少なくとも一方の外側から基板を透過する光線を照射し、光線で接合部材層を加熱する加熱ステップと、加熱した接合部材層で２枚の基板を接合する接合ステップとを有する方法である。   The first substrate bonding method (corresponding to claim 1) includes an installation step in which a bonding member layer is provided between two substrates at a position where a substrate is to be bonded, and at least one of the two substrates. A heating step of irradiating a light beam that passes through the substrate from outside and heating the bonding member layer with the light beam, and a bonding step of bonding two substrates with the heated bonding member layer.

第２の基板の接合方法（請求項２に対応）は、上記基板の接合方法において、好ましくは、接合部材層と一方の基板との間には第１の膜を有し、接合部材層と他方の基板との間には第２の膜を有することを特徴とする。   The second substrate bonding method (corresponding to claim 2) is preferably the above-described substrate bonding method, preferably including a first film between the bonding member layer and one substrate, A second film is provided between the other substrate.

第３の基板の接合方法（請求項３に対応）は、上記基板の接合方法において、好ましくは、一方の基板に設けられた第１の膜と他方の基板に設けられた第２の膜とを接触させて接合部材層が形成されることを特徴とする。   The third substrate bonding method (corresponding to claim 3) is preferably a first film provided on one substrate and a second film provided on the other substrate in the substrate bonding method described above. To form a bonding member layer.

第４の基板の接合方法（請求項４に対応）は、上記基板の接合方法において、好ましくは、接合部材層は、第１の膜または第２の膜のいずれか一方に取り付けられることを特徴とする。   The fourth substrate bonding method (corresponding to claim 4) is preferably the above-mentioned substrate bonding method, wherein the bonding member layer is preferably attached to either the first film or the second film. And

第５の基板の接合方法（請求項５に対応）は、上記基板の接合方法において、好ましくは、接合部材層は金属層であることを特徴とする。   The fifth substrate bonding method (corresponding to claim 5) is preferably the above-described substrate bonding method, wherein the bonding member layer is a metal layer.

第６の基板の接合方法（請求項６に対応）は、上記基板の接合方法において、好ましくは、２枚の基板の間に接合部材層を設ける設置ステップは、仮固定要素を用いて仮付けを行うステップであることを特徴とする。   The sixth substrate bonding method (corresponding to claim 6) is the above-described substrate bonding method, preferably, the installation step of providing the bonding member layer between the two substrates is temporarily attached using a temporary fixing element. It is the step which performs.

第７の基板の接合方法（請求項７に対応）は、上記基板の接合方法において、好ましくは、仮固定要素は樹脂材であること特徴とする。   A seventh substrate bonding method (corresponding to claim 7) is preferably the above-described substrate bonding method, wherein the temporary fixing element is a resin material.

第８の基板の接合方法（請求項８に対応）は、上記基板の接合方法において、好ましくは、接合部材層の周囲に熱分散部材を備えたことを特徴とする。   The eighth substrate bonding method (corresponding to claim 8) is characterized in that, in the substrate bonding method, preferably, a heat dispersion member is provided around the bonding member layer.

第９の基板の接合方法（請求項９に対応）は、上記基板の接合方法において、好ましくは、光線はレーザ光であり、スポット照射によって局所的に加熱することを特徴とする。   The ninth substrate bonding method (corresponding to claim 9) is preferably characterized in that, in the substrate bonding method, the light beam is laser light and is locally heated by spot irradiation.

第１０の基板の接合方法（請求項１０に対応）は、上記基板の接合方法において、好ましくは、接合部材層は、２つの基板の間に閉じた空間を形成する連続的なリング形状を有するように形成されることを特徴とする。   According to a tenth substrate bonding method (corresponding to claim 10), in the substrate bonding method, preferably, the bonding member layer has a continuous ring shape that forms a closed space between the two substrates. It is formed as follows.

第１１の基板の接合方法（請求項１１に対応）は、上記基板の接合方法において、好ましくは、加熱ステップの前に、光線を出射する光源が配置される側に位置する前記基板の表面にマスク部材を設けるステップを有し、加熱ステップでは、照射面積の広い光線を照射して選択した部位を加熱することを特徴とする。   An eleventh substrate bonding method (corresponding to claim 11) is the above-described substrate bonding method, preferably, before the heating step, on the surface of the substrate positioned on the side where the light source for emitting light is arranged. The method includes a step of providing a mask member, and the heating step is characterized in that a selected portion is heated by irradiation with a light beam having a wide irradiation area.

第１２の基板の接合方法（請求項１２に対応）は、上記基板の接合方法において、好ましくは、２つの基板のうちの一方の基板はガラス基板であり、他方の基板は半導体基板であることを特徴とする。   The twelfth substrate bonding method (corresponding to claim 12) is preferably the above-described substrate bonding method, wherein one of the two substrates is a glass substrate and the other substrate is a semiconductor substrate. It is characterized by.

第１の半導体装置（請求項１３に対応）は、２枚の基板を所定箇所で接合した構造を有する半導体装置であって、２枚の基板は、２枚の基板のうちの少なくともいずれか一方を透過する光線の照射で加熱された金属層によって接合されることを特徴とする。   The first semiconductor device (corresponding to claim 13) is a semiconductor device having a structure in which two substrates are joined at a predetermined position, and the two substrates are at least one of the two substrates. It joins by the metal layer heated by irradiation of the light ray which permeate | transmits.

第２の半導体装置（請求項１４に対応）は、上記の半導体装置において、好ましくは、２枚の基板のうち一方はガラス基板であり、他方は半導体基板であることを特徴とする。   The second semiconductor device (corresponding to claim 14) is preferably the above semiconductor device, wherein one of the two substrates is a glass substrate and the other is a semiconductor substrate.

第３の半導体装置（請求項１５に対応）は、上記の半導体装置において、好ましくは、ガラス基板と金属層との間には第１の膜を有し、半導体基板と金属層との間には第２の膜を有することを特徴とする。   The third semiconductor device (corresponding to claim 15) is preferably the above semiconductor device, preferably having a first film between the glass substrate and the metal layer, and between the semiconductor substrate and the metal layer. Has a second film.

第４の半導体装置（請求項１６に対応）は、上記の半導体装置において、好ましくは、半導体基板の表面には固体撮像素子が形成され、ガラス基板と半導体基板との間における固体撮像素子の前面空間は金属層で封止されていることを特徴とする。   In a fourth semiconductor device (corresponding to claim 16), in the semiconductor device described above, preferably, a solid-state image sensor is formed on the surface of the semiconductor substrate, and the front surface of the solid-state image sensor between the glass substrate and the semiconductor substrate. The space is sealed with a metal layer.

本発明によれば、次の効果を奏する。
特に金属を接合部材として利用し、２枚の基板のうちの少なくとも一方の光透過性を有する基板を通してレーザ光等を金属に照射し、金属を利用した局所的な集中的加熱によって金属を加熱して接合部を作るようにしたため、キャビティ内の結露発生や、リフロー等での実装時におけるパッケージクラック発生の問題が解消され、圧着をなくしてガラス基板や半導体基板等でのクラックの発生をなくすと共に、接合部の強度を高め、接合部の信頼性の高くすることができる。接合部の強度が高くなり、結露発生等の問題が解消したため、半導体回路の周囲環境の気密性を高くすることができる。 The present invention has the following effects.
In particular, the metal is used as a bonding member, the metal is irradiated with a laser beam or the like through at least one of the two substrates having light transmittance, and the metal is heated by localized intensive heating using the metal. As a result, the problem of dew condensation in the cavity and package cracks during reflow mounting has been eliminated, eliminating the occurrence of cracks in glass substrates and semiconductor substrates by eliminating pressure bonding. The strength of the joint can be increased and the reliability of the joint can be increased. Since the strength of the joint is increased and problems such as the occurrence of condensation are eliminated, the airtightness of the surrounding environment of the semiconductor circuit can be increased.

さらに、第１の基板の接合方法に係る本発明によれば、例えば半導体基板とガラス基板等の２枚の基板を接合するにあたり、両基板を仮固定し、接合部材層にのみレーザ光等を照射して局部的に加熱して２つの基板を接合する。仮固定の状態で接合部材層に局部的に集中して加熱して接合部を作るため、接合部材層以外の部分は不必要な熱の影響を受けず、また接合時に圧力を加えないので基板にクラック等も生じない。
第２の基板の接合方法に係る本発明によれば、第１および第２の膜は、各基板と接触する部分を保護する。
第３の基板の接合方法に係る本発明によれば、第１および第２の膜を利用して直接に接合部材として利用することが可能となり、接合のための構成が簡素となる。
第４の基板の接合方法に係る本発明によれば、接合部材としての層を、第１および第２の膜とは別に用意することができる。
第５の基板の接合方法に係る本発明によれば、接合部材を所望の金属とすることにより、金属接合部を形成し、これにより結露の問題を解消し、接合強度を高め、かつ接合部の信頼性を高めることができる。
第６の基板の接合方法に係る本発明によれば、仮付けでは、必要以上の荷重を２枚の基板に加えないので、基板でのクラック発生を防止することができる。
上記第８の基板の接合方法に係る本発明によれば、熱分散部材を付設することにより、接合部材層に集中的に与えられる熱を逃がし、熱に起因する基板のひび割れ等の発生を防止することができる。
上記第１０の基板の接合方法に係る本発明によれば、接合部材層をリング形状に形成することで、内部に形成される空間の高い気密性を実現することができる。
第１の半導体装置に係る本発明によれば、金属層で接合部を形成するようにしたため、接合強度が高く、接合の信頼性が高いものとなる。また金属層をスポット照射で加熱して接合部を作るので、熱を発生させる箇所が局所的であり、半導体回路等の他の部位への熱の影響を少なくすることができ、これにより金属接合が可能になる。 Furthermore, according to the present invention relating to the first substrate bonding method, for example, when bonding two substrates such as a semiconductor substrate and a glass substrate, both the substrates are temporarily fixed, and laser light or the like is applied only to the bonding member layer. Irradiate and heat locally to join the two substrates. Since the joint is formed by locally concentrating on the joining member layer in the temporarily fixed state, the parts other than the joining member layer are not affected by unnecessary heat, and no pressure is applied during joining. No cracks occur.
According to the present invention relating to the bonding method of the second substrates, the first and second films protect the portions in contact with the respective substrates.
According to the present invention relating to the third substrate bonding method, the first and second films can be used directly as bonding members, and the structure for bonding is simplified.
According to the present invention relating to the fourth substrate bonding method, a layer as a bonding member can be prepared separately from the first and second films.
According to the present invention relating to the fifth substrate bonding method, the bonding member is made of a desired metal, thereby forming the metal bonding portion, thereby eliminating the problem of dew condensation, increasing the bonding strength, and the bonding portion. Can improve the reliability.
According to the present invention relating to the sixth substrate bonding method, since the load more than necessary is not applied to the two substrates in the temporary attachment, the occurrence of cracks in the substrates can be prevented.
According to the present invention relating to the eighth substrate bonding method, by providing the heat dispersion member, the heat concentrated on the bonding member layer is released and the occurrence of cracks in the substrate due to the heat is prevented. can do.
According to the present invention relating to the tenth substrate bonding method, by forming the bonding member layer in a ring shape, high airtightness of the space formed inside can be realized.
According to the present invention relating to the first semiconductor device, since the joining portion is formed of the metal layer, the joining strength is high and the joining reliability is high. In addition, since the metal layer is heated by spot irradiation to create a joint, the location where heat is generated is local, and the influence of heat on other parts such as semiconductor circuits can be reduced, thereby making the metal joint Is possible.

以下に、本発明の好適な実施形態（実施例）を添付図面に基づいて説明する。   DESCRIPTION OF EMBODIMENTS Preferred embodiments (examples) of the present invention will be described below with reference to the accompanying drawings.

最初に、図１と図２を参照して本発明に係る基板の接合方法の特徴的な工程を説明する。図１は、本発明に係る基板の接合方法が実施される２枚の基板の設置状態を示す外観図である。   First, characteristic steps of the substrate bonding method according to the present invention will be described with reference to FIGS. FIG. 1 is an external view showing an installation state of two substrates in which the substrate bonding method according to the present invention is implemented.

図１で、下側部材１１は円板形状の半導体基板（または半導体ウェハ）であり、上側部材１２は円板形状の透明なガラス基板である。半導体基板１１はシリコン基板等である。半導体基板１１とガラス基板１２は、好ましくは水平であってかつ平行な位置関係で対向させた関係に保持される。通常、半導体基板１１は基板ステージ等の上に搭載されている。図１中、半導体基板１１とガラス基板１２は、図示しない仮固定材またはジグ等により仮固定または仮付けされている。仮固定材としては例えば樹脂や金属等である。なお、上側部材はガラス基板１２に限定されず、必要な周波数の光線を透過させる光透過基板であればよい。   In FIG. 1, the lower member 11 is a disk-shaped semiconductor substrate (or semiconductor wafer), and the upper member 12 is a disk-shaped transparent glass substrate. The semiconductor substrate 11 is a silicon substrate or the like. The semiconductor substrate 11 and the glass substrate 12 are preferably held in a relationship of facing each other in a horizontal and parallel positional relationship. Usually, the semiconductor substrate 11 is mounted on a substrate stage or the like. In FIG. 1, a semiconductor substrate 11 and a glass substrate 12 are temporarily fixed or temporarily attached with a temporary fixing material or a jig (not shown). Examples of the temporary fixing material include resin and metal. The upper member is not limited to the glass substrate 12 and may be a light transmitting substrate that transmits light beams having a necessary frequency.

上記のごとく仮固定材で仮固定された半導体基板１１とガラス基板１２に対して、ガラス基板１２の側から、レーザ光源１３によってレーザ光１４が所定のパターンにて照射される。レーザ光源１３は、図示しない移動支持装置によって支持されている。図１に示された１つの矩形の形状１５は、一例として示されたレーザ光１４の照射後の１つの閉じたスキャン軌跡、または照射を行う予定のスキャン軌跡を示している。このスキャン軌跡１５が、照射に係る所定のパターンの一例である。レーザ光１４の照射による当該パターンは、例えば、線描画または一筆書きのスキャン動作で描かれる。   As described above, the laser light 14 is irradiated in a predetermined pattern from the side of the glass substrate 12 to the semiconductor substrate 11 and the glass substrate 12 temporarily fixed by the temporary fixing material. The laser light source 13 is supported by a moving support device (not shown). A rectangular shape 15 shown in FIG. 1 shows one closed scan locus after irradiation of the laser beam 14 shown as an example, or a scan locus scheduled to be irradiated. This scan locus 15 is an example of a predetermined pattern related to irradiation. The said pattern by irradiation of the laser beam 14 is drawn by, for example, a line drawing or a one-stroke scanning operation.

レーザ光１４によるスキャン軌跡１５は、レーザ光源１３を、図示しない移動支持装置で移動させることにより描かれる。なお、移動装置を備えた基板ステージによって、半導体基板１１等の側を移動させることも可能である。またレーザ光源１３と半導体基板１１等を静止した状態に保持して、レーザ光１４のみをスキャン動作させることも可能である。   The scan locus 15 by the laser beam 14 is drawn by moving the laser light source 13 by a moving support device (not shown). Note that the side of the semiconductor substrate 11 or the like can be moved by a substrate stage provided with a moving device. It is also possible to scan only the laser beam 14 while holding the laser light source 13 and the semiconductor substrate 11 in a stationary state.

レーザ光源１３としては、例えばＹＡＧレーザ、キセノンレーザ、または半導体レーザが使用される。ＹＡＧレーザの周対数は１．６μｍ、キセノンレーザの周波数帯域は７９０〜８３０ｎｍ、半導体レーザの周波数は例えば８１０ｎｍである。通常の使用では、ＹＡＧレーザがレーザ光源１３として好ましい。   As the laser light source 13, for example, a YAG laser, a xenon laser, or a semiconductor laser is used. The peripheral logarithm of the YAG laser is 1.6 μm, the frequency band of the xenon laser is 790 to 830 nm, and the frequency of the semiconductor laser is 810 nm, for example. In normal use, a YAG laser is preferred as the laser light source 13.

実際上、円板形状の半導体基板１１の表面には、既に半導体デバイスを作る成膜技術等に基づいて極めて多数の半導体回路が形成されている。図１において、上記の矩形のスキャン軌跡１５で囲まれる矩形領域に対応する半導体基板１１の表面領域上には、多数の半導体回路のうちの１つの半導体回路が存在している。スキャン軌跡１５は１つの半導体回路の周囲をほぼ同形の形状で囲むように決められる。当該半導体回路は矩形のスキャン軌跡１５内の領域に存在する。   In practice, an extremely large number of semiconductor circuits are already formed on the surface of the disk-shaped semiconductor substrate 11 based on a film forming technique for producing a semiconductor device. In FIG. 1, one semiconductor circuit among many semiconductor circuits exists on the surface region of the semiconductor substrate 11 corresponding to the rectangular region surrounded by the rectangular scan locus 15. The scan locus 15 is determined so as to surround one semiconductor circuit with a substantially identical shape. The semiconductor circuit exists in a region within the rectangular scan locus 15.

上記半導体回路は実際には寸法的に極めて小さいものであるが、図１で示された矩形のスキャン軌跡１５は拡大し誇張して図示している。多数の半導体回路は、所定のレイアウトパターンによって、上側に位置するガラス基板１２を通して見える状態にある。   The semiconductor circuit is actually very small in size, but the rectangular scan locus 15 shown in FIG. 1 is enlarged and exaggerated. Many semiconductor circuits are in a state of being visible through the glass substrate 12 located on the upper side according to a predetermined layout pattern.

上記の半導体回路は、例えば固体撮像素子またはその他の電子回路である。また図１では一例として２つのスキャン軌跡１５が示されている。この実施形態では、２つのスキャン軌跡１５は、１つのレーザ光源１３によって予め決められた順序で個別に光線照射されて描かれる。なお、図１では１つのレーザ光源１３が示されているが、例えば複数のレーザ光源を設けて同時にスキャンすることもできる。   The semiconductor circuit is, for example, a solid-state image sensor or other electronic circuit. In FIG. 1, two scan trajectories 15 are shown as an example. In this embodiment, the two scan trajectories 15 are drawn by being individually irradiated with light beams in a predetermined order by one laser light source 13. In FIG. 1, one laser light source 13 is shown. However, for example, a plurality of laser light sources may be provided and simultaneously scanned.

仮固定された半導体基板１１とガラス基板１２に対して、多数の半導体回路のすべてに関してレーザ光源１３による接合のための処理が完了した後には、各半導体回路は切断・分離される。従って、スキャン軌跡１５の間には切断を行うための所要の幅が確保されている。   After the temporarily fixed semiconductor substrate 11 and the glass substrate 12 have been subjected to the process for bonding by the laser light source 13 for all of the many semiconductor circuits, the respective semiconductor circuits are cut and separated. Therefore, a required width for cutting is ensured between the scan trajectories 15.

図２は、図１で示したレーザ光線１３によるレーザ光１４の照射位置に対応する半導体基板１１とガラス基板１２の要部の部分縦断面図を示す。半導体基板１１の表面には１つの半導体回路２１の一部が形成されている。半導体基板１１に対して微小な幅の隙間をあけてガラス基板１２が平行な位置関係にて対向して仮固定されている。半導体基板１１とガラス基板１２の間に設けられた仮固定材の図示は省略されている。   FIG. 2 is a partial longitudinal sectional view of the main part of the semiconductor substrate 11 and the glass substrate 12 corresponding to the irradiation position of the laser beam 14 by the laser beam 13 shown in FIG. A part of one semiconductor circuit 21 is formed on the surface of the semiconductor substrate 11. The glass substrate 12 is temporarily fixed so as to face the semiconductor substrate 11 in a parallel positional relationship with a gap having a minute width. The temporary fixing material provided between the semiconductor substrate 11 and the glass substrate 12 is not shown.

半導体基板１１とガラス基板１２との間には、半導体回路２１の縁に沿って、薄い厚みでかつ狭い幅を有する金属層２２が設けられている。金属層２２は、平面図的な形状で見ると、矩形リングを形成するライン状になっている。金属層２２と半導体基板１１との間には第１の膜２３が介設され、金属層２２とガラス基板１２との間には第２の膜２４が介設されている。 金属層２２は、半導体基板１１とガラス基板１２を接合するための接合材となる。当該金属層２２に対しては、レーザ光源１３から、ガラス基板１２等を透過してレーザ光１４が照射される。金属層２２におけるレーザ光１４が照射された部分は、レーザ光１４の照射による加熱作用で厚み方向の全体に渡って溶融し、その後固化して半導体基板１１とガラス基板１２を接合する。図２では、例えば、レーザ光１４によって第２の膜２４のガラス基板１２側の表面にスポット照射領域２５が形成されている。スポット照射領域２５は、第２の膜２４の幅方向（図２中横方向）のほぼ中央点に設定されている。レーザ光１４のスポット照射領域２５の照射位置の位置合せは、半導体基板１１に係るウェハのアライメントマークを基準にして設定される。このレーザ光１４のスポット照射によって金属層２２は加熱され、溶融する。図２における金属層２２は溶融状態にある金属層断面を示している。溶融した金属層２２が固化すると、金属層２２の当該箇所に関して半導体基板１１とガラス基板１２は接合される。   A metal layer 22 having a small thickness and a narrow width is provided between the semiconductor substrate 11 and the glass substrate 12 along the edge of the semiconductor circuit 21. The metal layer 22 has a line shape forming a rectangular ring when viewed in plan view. A first film 23 is interposed between the metal layer 22 and the semiconductor substrate 11, and a second film 24 is interposed between the metal layer 22 and the glass substrate 12. The metal layer 22 serves as a bonding material for bonding the semiconductor substrate 11 and the glass substrate 12. The metal layer 22 is irradiated with laser light 14 from the laser light source 13 through the glass substrate 12 and the like. The portion of the metal layer 22 irradiated with the laser light 14 is melted over the entire thickness direction by the heating action of the laser light 14 irradiation, and then solidifies to join the semiconductor substrate 11 and the glass substrate 12. In FIG. 2, for example, a spot irradiation region 25 is formed on the surface of the second film 24 on the glass substrate 12 side by the laser beam 14. The spot irradiation region 25 is set at a substantially central point in the width direction (lateral direction in FIG. 2) of the second film 24. The alignment of the irradiation position of the spot irradiation region 25 of the laser beam 14 is set with reference to the alignment mark of the wafer related to the semiconductor substrate 11. The metal layer 22 is heated and melted by the spot irradiation of the laser beam 14. The metal layer 22 in FIG. 2 shows a cross section of the metal layer in a molten state. When the molten metal layer 22 is solidified, the semiconductor substrate 11 and the glass substrate 12 are bonded with respect to the portion of the metal layer 22.

図２に示したレーザ光１４によるスポット照射は、前述のごとくスキャン軌跡１５に沿って移動しながら行われ、スキャン軌跡１５に対応して矩形のリング形状に形成された金属層２２のすべてが加熱・溶融される。その結果、スキャン軌跡１５の矩形リング形状に対応する形状を有した金属層２２のすべての箇所で加熱・溶融が行われ、金属層２２によって半導体基板１１とガラス基板１２が接合される。   The spot irradiation with the laser beam 14 shown in FIG. 2 is performed while moving along the scan locus 15 as described above, and all of the metal layer 22 formed in a rectangular ring shape corresponding to the scan locus 15 is heated.・ It is melted. As a result, heating and melting are performed at all locations of the metal layer 22 having a shape corresponding to the rectangular ring shape of the scan locus 15, and the semiconductor substrate 11 and the glass substrate 12 are joined by the metal layer 22.

レーザ光源１３から出射されるレーザ光１４によりスキャン軌跡１５に関して加熱が完了すると、半導体回路２１の周囲には、半導体基板１１とガラス基板１２と金属層２２によって囲まれ封止されたキャビティ２６が形成される。   When heating with respect to the scan locus 15 is completed by the laser light 14 emitted from the laser light source 13, a cavity 26 surrounded and sealed by the semiconductor substrate 11, the glass substrate 12, and the metal layer 22 is formed around the semiconductor circuit 21. Is done.

次に、図３〜図６を参照して本発明の基板の接合方法の全体的なプロセスを説明する。図３〜図６のそれぞれは、半導体基板１１とガラス基板１２の間で金属接合が行われる箇所の部分縦断面図を示す。   Next, the overall process of the substrate bonding method of the present invention will be described with reference to FIGS. Each of FIGS. 3 to 6 shows a partial longitudinal sectional view of a portion where metal bonding is performed between the semiconductor substrate 11 and the glass substrate 12.

図３は第１のステップを示す。図３は、図示しない基板ステージ等に、前の工程で作られた半導体基板１１が水平状態にて置かれる。半導体基板１１の表面には、多数の半導体回路２１と第１の膜２３とが所定のパターンで形成されている。この半導体基板１１に対して平行に、所要の間隔をあけて、対向した状態でガラス基板１２が配置される。ガラス基板１２は、既に前の工程により作られ、準備されている。ガラス基板１２の下面（対向面）には、第２の膜２４を介して設けられた金属層２２が所定のパターンで形成されている。半導体基板１１とガラス基板１２とが対向する配置関係において、第１の膜２３と金属層２２は対向した位置にある。   FIG. 3 shows the first step. In FIG. 3, the semiconductor substrate 11 produced in the previous step is placed in a horizontal state on a substrate stage (not shown). On the surface of the semiconductor substrate 11, a large number of semiconductor circuits 21 and a first film 23 are formed in a predetermined pattern. The glass substrate 12 is arranged in parallel with the semiconductor substrate 11 with a predetermined interval therebetween. The glass substrate 12 has already been prepared and prepared by the previous process. On the lower surface (opposing surface) of the glass substrate 12, a metal layer 22 provided with a second film 24 is formed in a predetermined pattern. In the arrangement relationship in which the semiconductor substrate 11 and the glass substrate 12 face each other, the first film 23 and the metal layer 22 are located at the opposite positions.

上記金属層２２は、第１のステップの段階では、加熱・溶融前の状態にある。従って金属層２２の断面はほぼ半円形の形状を有している。金属層２２は低融点金属であり、その材質・種類は後で説明される。   The metal layer 22 is in a state before heating and melting in the stage of the first step. Therefore, the cross section of the metal layer 22 has a substantially semicircular shape. The metal layer 22 is a low melting point metal, and its material and type will be described later.

図４は第２のステップを示す。図４では、半導体基板１１に対してガラス基板１２を接近させ、金属層２２を第１の膜２３に接触させる。このとき、金属層２２の先端接触部は若干つぶれた状態になる。   FIG. 4 shows the second step. In FIG. 4, the glass substrate 12 is brought close to the semiconductor substrate 11, and the metal layer 22 is brought into contact with the first film 23. At this time, the tip contact portion of the metal layer 22 is slightly crushed.

図５は第３のステップを示す。図５では、ガラス基板１２の上側にレーザ光源１３を配置し、金属層２２を加熱するためにレーザ光１４を出力させる。レーザ光１４は、ガラス基板１２をほぼ透過し、第２の膜２４の上にスポット照射領域２５を形成する。第２の膜２４にレーザ光１４がスポット照射されることで金属層２２は加熱され、その被加熱部分は溶融する。金属層２２が溶融すると、金属層２２の断面形状は破線２２ａに示すように変化する。破線２２ａで示した状態が、前述の図２で説明した状態に相当する。   FIG. 5 shows the third step. In FIG. 5, the laser light source 13 is disposed on the upper side of the glass substrate 12, and the laser beam 14 is output to heat the metal layer 22. The laser beam 14 substantially passes through the glass substrate 12 and forms a spot irradiation region 25 on the second film 24. When the laser beam 14 is spot-irradiated on the second film 24, the metal layer 22 is heated and the heated portion is melted. When the metal layer 22 melts, the cross-sectional shape of the metal layer 22 changes as indicated by a broken line 22a. The state indicated by the broken line 22a corresponds to the state described with reference to FIG.

図６は第４のステップを示す。図６では、金属層２２がレーザ光１４によって加熱・溶融され、その後固化した状態を示している。固化時の金属層２２の断面形状は、図５で示した破線２２ａに基づく断面形状とほぼ同一である。この状態において、金属層２２によって半導体基板１１とガラス基板１２は接合される。金属層２２は、半導体基板１１の第１の膜に接合している。   FIG. 6 shows the fourth step. FIG. 6 shows a state in which the metal layer 22 is heated and melted by the laser light 14 and then solidified. The cross-sectional shape of the metal layer 22 at the time of solidification is substantially the same as the cross-sectional shape based on the broken line 22a shown in FIG. In this state, the semiconductor substrate 11 and the glass substrate 12 are bonded by the metal layer 22. The metal layer 22 is bonded to the first film of the semiconductor substrate 11.

その後の工程では、半導体基板１１とガラス基板１２の接合物は、各半導体回路２１ごとに取り出されるように切断される。こうして、金属層２２で接合されかつ封止されると共に、１つの半導体回路２１を含む半導体基板１１と、ガラス基板１２とから成る半導体装置３０が形成される。   In the subsequent process, the joined body of the semiconductor substrate 11 and the glass substrate 12 is cut so as to be taken out for each semiconductor circuit 21. Thus, a semiconductor device 30 is formed which is bonded and sealed with the metal layer 22 and is composed of the semiconductor substrate 11 including one semiconductor circuit 21 and the glass substrate 12.

上記のごとく、多数の半導体回路２１の各々に対応して局所的な箇所に設けられた低融点の金属層２２を集中的に加熱・溶融して、仮固定された半導体基板１１とガラス基板１２を金属接合するようにしたため、高い接合強度、および信頼性の高い接合部を実現できると共に、半導体回路２１そのものには不必要な熱を加えず、半導体回路２１にダメージを与えることがない。また基本的に樹脂を利用して圧着接合しないので、水分等は発生せず、キャビティ２６内の結露の問題も解消される。レーザ光１４の加熱作用を利用して半導体基板１１とガラス基板１２を接合するとき、両基板を圧着させる必要がないので、半導体基板１１またはガラス基板１２にクラック等が発生するのをなくすことができる。キャビティ２６は金属層２２で封止（シール）されることになるので、高い気密性が実現される。   As described above, the low-melting point metal layer 22 provided at a local location corresponding to each of the multiple semiconductor circuits 21 is intensively heated and melted to temporarily fix the semiconductor substrate 11 and the glass substrate 12. Therefore, it is possible to realize a high bonding strength and a highly reliable bonding portion, and the semiconductor circuit 21 itself is not subjected to unnecessary heat and is not damaged. In addition, since the resin is basically not used for pressure bonding, moisture or the like is not generated, and the problem of condensation in the cavity 26 is also solved. When the semiconductor substrate 11 and the glass substrate 12 are bonded using the heating action of the laser light 14, it is not necessary to press the substrates together, so that the generation of cracks or the like in the semiconductor substrate 11 or the glass substrate 12 can be eliminated. it can. Since the cavity 26 is sealed (sealed) with the metal layer 22, high airtightness is realized.

またレーザ光１４による加熱で接合する前の仮固定段階で、半導体基板１１とガラス基板１２を仮固定するとき、通常の大気圧環境で仮固定してもよいし、所要真空度の真空環境で仮固定を行ってもよい。真空環境で仮固定を行って、かつレーザ光１４で金属接合を行うと、キャビティ２６内の空間を真空封止または真空密閉することができる。なおキャビティ２６内に不活性ガスを導入することもできる。   In addition, when the semiconductor substrate 11 and the glass substrate 12 are temporarily fixed in the temporary fixing stage before being heated by the laser beam 14, the semiconductor substrate 11 and the glass substrate 12 may be temporarily fixed in a normal atmospheric pressure environment or in a vacuum environment of a required vacuum degree. Temporary fixing may be performed. When temporary fixing is performed in a vacuum environment and metal bonding is performed with the laser beam 14, the space in the cavity 26 can be vacuum sealed or vacuum sealed. An inert gas can also be introduced into the cavity 26.

レーザ光源１３から出射されたレーザ光１４で金属層２２を加熱するとき、図７に示すごとく、上記のスポット照射領域２５を変更することができる。図７の（Ａ）では、レーザ光１４が第２の膜２４を透過し、そのスポット照射領域２５が金属層２２の内部に入り込んでいる。図７の（Ｂ）では、スポット照射領域２５がさらに下降し、第１の膜２３の箇所に設定される。図７の（Ａ）と（Ｂ）に示したスポット照射領域２５の位置は、レーザ光源１３に付設された焦点調整装置（図示せず）によって調整され、設定される。このようなレーザ光１４のスポット照射領域２５を調整は、金属層２２を加熱・溶融するときの条件に応じて行われる。供給する熱量が高い場合には、スポット照射領域２５は金属層２２の内部に深く入り込む。   When the metal layer 22 is heated by the laser beam 14 emitted from the laser light source 13, the spot irradiation region 25 can be changed as shown in FIG. In FIG. 7A, the laser beam 14 passes through the second film 24, and the spot irradiation region 25 enters the inside of the metal layer 22. In FIG. 7B, the spot irradiation region 25 is further lowered and set at the location of the first film 23. The positions of the spot irradiation areas 25 shown in FIGS. 7A and 7B are adjusted and set by a focus adjustment device (not shown) attached to the laser light source 13. Such adjustment of the spot irradiation region 25 of the laser beam 14 is performed according to conditions when the metal layer 22 is heated and melted. When the amount of heat to be supplied is high, the spot irradiation region 25 penetrates deeply into the metal layer 22.

またレーザ光１４のスポット照射領域２５の面積を、供給したい熱量または発生したい温度に応じて、レーザ光源１３の出力等と併せて調整することもできる。   Further, the area of the spot irradiation region 25 of the laser light 14 can be adjusted together with the output of the laser light source 13 or the like according to the amount of heat to be supplied or the temperature to be generated.

さらに上側基板がガラス基板１２でなく、シリコン基板であってもよい。レーザ光線１４の波長を適宜に調整すれば、当該レーザ光線はシリコン基板を透過し、第２の膜２４、金属層２２の内部、第１の膜２３のいずれかに焦点を合せることができる。   Furthermore, the upper substrate may be a silicon substrate instead of the glass substrate 12. If the wavelength of the laser beam 14 is appropriately adjusted, the laser beam passes through the silicon substrate and can be focused on either the second film 24, the inside of the metal layer 22, or the first film 23.

次に、金属層２２と第１の膜２３と第２の膜２４の各々の材質について説明する。材質を説明する前に、まず、金属層２２と第１の膜２３と第２の膜２４の組合せを説明する。金属層２２と第１の膜２３と第２の膜２４の組合せの一例は図８の（Ａ）〜（Ｃ）に示される。   Next, the materials of the metal layer 22, the first film 23, and the second film 24 will be described. Before describing the material, first, the combination of the metal layer 22, the first film 23, and the second film 24 will be described. An example of a combination of the metal layer 22, the first film 23, and the second film 24 is shown in FIGS.

図８の（Ａ）に示した組合せ（組合せ（Ａ））は、半導体基板１１側に第１の膜２３を設け、ガラス基板１２側に金属層２２と第２の膜２４を設けた構成である。この構成は、上記実施形態で説明した基板の接合方法の構成である。   The combination (combination (A)) shown in FIG. 8A has a configuration in which the first film 23 is provided on the semiconductor substrate 11 side and the metal layer 22 and the second film 24 are provided on the glass substrate 12 side. is there. This configuration is the configuration of the substrate bonding method described in the above embodiment.

図８の（Ｂ）に示した組合せ（組合せ（Ｂ））は、半導体基板１１側に金属層２２と第１の膜２３を設け、ガラス基板１２側に第２の膜２４を設けた構成である。この構成は、金属層２２が予め半導体基板１１側に設けられている点に特徴がある。   The combination shown in FIG. 8B (combination (B)) has a configuration in which the metal layer 22 and the first film 23 are provided on the semiconductor substrate 11 side, and the second film 24 is provided on the glass substrate 12 side. is there. This configuration is characterized in that the metal layer 22 is provided on the semiconductor substrate 11 side in advance.

図８の（Ｃ）に示した組合せ（組合せ（Ｃ））は、半導体基板１１側に第１の膜２３を設け、ガラス基板１２側に第２の膜２４のみを設けた構成である。この構成では、金属層２２が省略されている。その代わりに、第１の膜２３と第２の膜２４の少なくとも一方ははその厚みを大きくして形成され、金属層２２の代用物として使用される。   The combination (combination (C)) shown in FIG. 8C has a configuration in which the first film 23 is provided on the semiconductor substrate 11 side and only the second film 24 is provided on the glass substrate 12 side. In this configuration, the metal layer 22 is omitted. Instead, at least one of the first film 23 and the second film 24 is formed with a larger thickness and used as a substitute for the metal layer 22.

金属層２２と第１の膜２３と第２の膜２４の組合せの例は上記の例に限定されず、例えば３層以上の多層の組合せにすることも可能である。   An example of the combination of the metal layer 22, the first film 23, and the second film 24 is not limited to the above example, and for example, a combination of three or more layers may be used.

金属層２２と第１の膜２３と第２の膜２４についての上記の３つの組合せ（Ａ），（Ｂ），（Ｃ）の下で、それぞれの好ましい材質を示すと、次の通りである。   Under the above three combinations (A), (B), and (C) for the metal layer 22, the first film 23, and the second film 24, preferred materials are shown as follows. .

上記の組合せ（Ａ），（Ｂ）の場合：
金属層２２； 半田。
第１の膜２３； Ｃｒ（クロム）、Ｔｉ（チタン）、ＴｉＷ（チタン・タングステン）、Ｎｉ（ニッケル）、Ｎｉ／Ａｕ（ニッケル／金）、Ａｕ（金）、Ｃｕ（銅）のうちのいずれか。
第２の膜２４； Ｃｒ（クロム）、Ｔｉ（チタン）、ＴｉＷ（チタン・タングステン）、Ｎｉ（ニッケル）、Ｎｉ／Ａｕ（ニッケル／金）、Ａｕ（金）、Ｃｕ（銅）のうちのいずれか。 In the case of the above combinations (A) and (B):
Metal layer 22; solder.
First film 23; any of Cr (chromium), Ti (titanium), TiW (titanium / tungsten), Ni (nickel), Ni / Au (nickel / gold), Au (gold), Cu (copper) Or?
Second film 24; any of Cr (chromium), Ti (titanium), TiW (titanium / tungsten), Ni (nickel), Ni / Au (nickel / gold), Au (gold), and Cu (copper) Or?

上記の組合せ（Ｃ）の場合：
第１の膜２３； Ａｕ（金）、Ｃｕ（銅）、Ｎｉ／Ａｕ（ニッケル／金）のうちのいずれか。
第２の膜２４； Ａｕ（金）、Ｃｕ（銅）、Ｎｉ／Ａｕ（ニッケル／金）のうちのいずれか。 For combination (C) above:
First film 23: Any of Au (gold), Cu (copper), and Ni / Au (nickel / gold).
Second film 24; one of Au (gold), Cu (copper), and Ni / Au (nickel / gold).

上記の組合せ（Ａ），（Ｂ），（Ｃ）で共通して可能な場合：
金属層２２； 必要な場合にはＡｕ（金）。
第１の膜２３； Ｐｏｌｙ Ｓｉ（ポリシリコン）。
第２の膜２４； Ｎｉ／Ａｕ（ニッケル／金）、Ｐｏｌｙ Ｓｉ（ポリシリコン）のうちのいずれか。 When the above combinations (A), (B), and (C) are possible in common:
Metal layer 22; Au (gold) if necessary.
First film 23; Poly Si (polysilicon).
Second film 24: one of Ni / Au (nickel / gold) and Poly Si (polysilicon).

上記の金属層２２と第１の膜２３と第２の膜２４の各材質の選択は、加熱の温度領域や、使用するレーザ光１４の周波数を考慮して適宜に行われる。   Selection of each material of the metal layer 22, the first film 23, and the second film 24 is appropriately performed in consideration of the heating temperature region and the frequency of the laser beam 14 to be used.

次に図９を参照して熱緩衝層について説明する。「熱緩衝層」とは、レーザ光１４で金属層２２を局所的に加熱するときに、熱が集中しすぎてガラス基板１２等に割れが発生するのを防止するための熱分散部材である。熱緩衝層を作るためには２つの構成が考えられる。第１の構成は、図９の（Ａ）に示されるごとく第２の膜２４をその幅方向に広げることである。なお第２の膜２４の厚みを増してもよい。また第２の構成は、図９の（Ｂ）に示されるごとく、熱容量を大きくする部材４１を第２の膜２４と金属層２２の両側の側面等に沿って付加することである。このような熱緩衝層を設けることにより、ガラス基板１２の割れを防止することができる。   Next, the thermal buffer layer will be described with reference to FIG. The “thermal buffer layer” is a heat dispersion member for preventing the glass substrate 12 and the like from being cracked due to excessive heat concentration when the metal layer 22 is locally heated by the laser light 14. . Two configurations are possible for making the thermal buffer layer. The first configuration is to widen the second film 24 in the width direction as shown in FIG. Note that the thickness of the second film 24 may be increased. The second configuration is to add a member 41 for increasing the heat capacity along the side surfaces on both sides of the second film 24 and the metal layer 22 as shown in FIG. 9B. By providing such a heat buffer layer, the glass substrate 12 can be prevented from cracking.

図１０を参照して、接合前の金属層２２の周囲構造の例を説明する。前述した実施形態では、説明の便宜上、金属層２２の周囲は、実際には例えば仮固定材が存在するにも拘らず、何もない空間の状態で示した。   With reference to FIG. 10, the example of the surrounding structure of the metal layer 22 before joining is demonstrated. In the embodiment described above, for convenience of explanation, the periphery of the metal layer 22 is shown in a state of a space where there is actually a temporary fixing material, for example, although there is a temporary fixing material.

これに対して、図１０の（Ａ）によれば、仮固定された状態の半導体基板１１とガラス基板１２の間において、金属支柱５１と、その間の空間に充填された樹脂５２とが示されている。金属支柱５１は、半導体基板１１とガラス基板１２の間隔を保持するスペーサとして機能する。また金属支柱５１によって半導体基板１１とガラス基板１２との間隔を制御することができる。また樹脂５２は接着剤としての作用を発揮する。金属支柱５１と樹脂５２を設けることで、レーザ光１４による加熱の際に応力緩和の作用を生じさせることができる。また図１０の（Ｂ）に示すごとく、仮固定された半導体基板１１とガラス基板１２の間の空間に樹脂５３のみを埋め込むようにすることもできる。これによっても、レーザ光１４による加熱の際に応力緩和の作用を生じさせることができる。   On the other hand, according to FIG. 10A, between the semiconductor substrate 11 and the glass substrate 12 in the temporarily fixed state, the metal support 51 and the resin 52 filled in the space between them are shown. ing. The metal column 51 functions as a spacer that keeps the distance between the semiconductor substrate 11 and the glass substrate 12. Further, the distance between the semiconductor substrate 11 and the glass substrate 12 can be controlled by the metal support 51. Further, the resin 52 exhibits an action as an adhesive. By providing the metal strut 51 and the resin 52, it is possible to cause an action of stress relaxation during heating by the laser light 14. Further, as shown in FIG. 10B, it is possible to embed only the resin 53 in the space between the temporarily fixed semiconductor substrate 11 and the glass substrate 12. Also by this, an action of stress relaxation can be generated during heating by the laser beam 14.

また、仮固定された半導体基板１１とガラス基板１２の間の設けられた上記の金属支柱５１および樹脂５２、あるいは樹脂５３は仮固定材として機能する。   Further, the metal support 51 and the resin 52 or the resin 53 provided between the temporarily fixed semiconductor substrate 11 and the glass substrate 12 function as a temporary fixing material.

図１１は、前述した金属層２２の部分の全体を示す外観斜視図である。金属層２２は、実際には、半導体基板１１とガラス基板１２との間のスペースで層状に形成されるものであるが、図１１では金属層２２の高さを誇張して図示している。半導体基板１１とガラス基板１２が仮固定された状態で、金属層２２は、半導体基板１１の表面に形成された半導体回路２１に対してこれを包囲する外周壁のごとく形成されている。金属層２２の上側の縁がレーザ光１４を照射する部分となる。半導体基板１１とガラス基板１２との間で、このような形状を有する金属層２２によって金属接合部が形成されるので、気密性が高められる。   FIG. 11 is an external perspective view showing the entire metal layer 22 described above. The metal layer 22 is actually formed in a layer shape in the space between the semiconductor substrate 11 and the glass substrate 12, but in FIG. 11, the height of the metal layer 22 is exaggerated. In a state where the semiconductor substrate 11 and the glass substrate 12 are temporarily fixed, the metal layer 22 is formed like an outer peripheral wall surrounding the semiconductor circuit 21 formed on the surface of the semiconductor substrate 11. The upper edge of the metal layer 22 is a portion where the laser beam 14 is irradiated. Since the metal joint portion is formed between the semiconductor substrate 11 and the glass substrate 12 by the metal layer 22 having such a shape, airtightness is improved.

本発明の実施形態は、次のように変更することもできる。   The embodiment of the present invention can be modified as follows.

図３で説明した前述の実施形態では、ガラス基板１２の側のみに金属層２２を設けるように下が、ガラス基板１２と半導体基板１１の両方に同様な条件で金属層２２を設けるようにしてもよい。   In the embodiment described with reference to FIG. 3, the metal layer 22 is provided only on the glass substrate 12 side, but the metal layer 22 is provided on both the glass substrate 12 and the semiconductor substrate 11 under similar conditions. Also good.

前述の実施形態では、金属層２２は固体の金属材を用いたが、その代わりに、接合前にはペースト状であって加熱・溶融後には金属接合部となる金属材を用いることもできる。   In the above-described embodiment, the metal layer 22 is a solid metal material. Alternatively, a metal material that is in a paste form before joining and becomes a metal joint after heating and melting can be used.

さらに金属層２２を加熱するレーザ光１４には、通常のビーム状光線であって比較的に絞られたビーム径を有する光線を使用するようにしたが、ビーム径を大きくしかつマスクを使用して１つの環状の金属層２２、または多数の金属層２２を一度の光線照射で加熱するように構成することもできる。   Further, the laser beam 14 for heating the metal layer 22 is a normal beam having a relatively narrow beam diameter, but the beam diameter is increased and a mask is used. It is also possible to heat one annular metal layer 22 or a large number of metal layers 22 with a single light irradiation.

半導体基板１１はシリコン基板とし、上側基板はガラス基板１２として説明したが、接合される２つの基板はこれらに限定されない。ガリウム・ヒ素基板や化合物半導体基板であっても適用することができる。   Although the semiconductor substrate 11 is described as a silicon substrate and the upper substrate is described as a glass substrate 12, the two substrates to be bonded are not limited to these. Even a gallium arsenide substrate or a compound semiconductor substrate can be applied.

また上記のレーザ光線１４は、ガラス基板１２の側のみから照射するように下が、２枚の基板が両方共に光透過性を有する場合には、２枚の基板の両側からレーザ光線を照射するように構成することもできる。   Further, the laser beam 14 is irradiated so as to be irradiated only from the glass substrate 12 side. When the two substrates are both light transmissive, the laser beam is irradiated from both sides of the two substrates. It can also be configured as follows.

以上の実施形態で説明された構成、形状、大きさおよび配置関係については本発明が理解・実施できる程度に概略的に示したものにすぎず、また数値および各構成の組成（材質）については例示にすぎない。従って本発明は、説明された実施形態に限定されるものではなく、特許請求の範囲に示される技術的思想の範囲を逸脱しない限り様々な形態に変更することができる。   The configurations, shapes, sizes, and arrangement relationships described in the above embodiments are merely shown to the extent that the present invention can be understood and implemented, and the numerical values and the compositions (materials) of the respective configurations are as follows. It is only an example. Therefore, the present invention is not limited to the described embodiments, and can be variously modified without departing from the scope of the technical idea shown in the claims.

本発明は、２枚の基板を接合して成る半導体装置の製作に利用される。   The present invention is used for manufacturing a semiconductor device formed by bonding two substrates.

本発明に係る基板の接合方法が実施されている２枚の基板の設置状態を示す外観図である。It is an external view which shows the installation state of the two board | substrates with which the bonding | joining method of the board | substrate concerning this invention is implemented. 図１で示したレーザ光照射位置に対応する半導体基板とガラス基板の要部の部分縦断面図である。FIG. 2 is a partial longitudinal sectional view of main parts of a semiconductor substrate and a glass substrate corresponding to the laser beam irradiation position shown in FIG. 1. 本発明の基板の接合方法の全体的プロセスにおける第１のステップでの半導体基板とガラス基板の間で金属接合が行われる箇所の部分縦断面図である。It is a fragmentary longitudinal cross-section of the location where metal joining is performed between the semiconductor substrate and the glass substrate in the first step in the overall process of the substrate joining method of the present invention. 本発明の基板の接合方法の全体的プロセスにおける第２のステップでの半導体基板とガラス基板の間で金属接合が行われる箇所の部分縦断面図である。It is a fragmentary longitudinal cross-section of the location where metal bonding is performed between the semiconductor substrate and the glass substrate in the second step in the overall process of the substrate bonding method of the present invention. 本発明の基板の接合方法の全体的プロセスにおける第３のステップでの半導体基板とガラス基板の間で金属接合が行われる箇所の部分縦断面図である。It is a fragmentary longitudinal cross-section of the location where metal bonding is performed between the semiconductor substrate and the glass substrate in the third step in the overall process of the substrate bonding method of the present invention. 本発明の基板の接合方法の全体的プロセスにおける第４のステップでの半導体基板とガラス基板の間で金属接合が行われる箇所の部分縦断面図である。It is a fragmentary longitudinal cross-section of the location where metal bonding is performed between the semiconductor substrate and the glass substrate in the fourth step in the overall process of the substrate bonding method of the present invention. レーザ光によるスポット照射領域の他の設定位置を示す要部縦断面図である。It is a principal part longitudinal cross-sectional view which shows the other setting position of the spot irradiation area | region by a laser beam. 「第１の膜／金属層／第２の膜」の組合せの例を説明するための部分縦断面図である。It is a fragmentary longitudinal cross-sectional view for demonstrating the example of the combination of "1st film | membrane / metal layer / 2nd film | membrane". 熱緩衝層を説明するための要部縦断面図である。It is a principal part longitudinal cross-sectional view for demonstrating a thermal buffer layer. 接合前の金属層の周囲構造の例を説明するための要部縦断面図である。It is a principal part longitudinal cross-sectional view for demonstrating the example of the surrounding structure of the metal layer before joining. 金属部分の全体を示す外観斜視図である。It is an external appearance perspective view which shows the whole metal part. 従来の基板の接合方法を説明するための要部縦断面図である。It is a principal part longitudinal cross-sectional view for demonstrating the conventional bonding method of a board | substrate.

符号の説明Explanation of symbols

１１ 半導体基板
１２ ガラス基板
１３ レーザ光源
１４ レーザ光
１５ スキャン軌跡
２１ 半導体回路
２２ 金属層
２３ 第１の膜
２４ 第２の膜
２５ スポット照射領域
２６ キャビティ
３０ 半導体装置
DESCRIPTION OF SYMBOLS 11 Semiconductor substrate 12 Glass substrate 13 Laser light source 14 Laser light 15 Scan locus 21 Semiconductor circuit 22 Metal layer 23 1st film | membrane 24 2nd film | membrane 25 Spot irradiation area 26 Cavity 30 Semiconductor device

Claims (16)

２枚の基板の間においてこれらの基板を接合する予定部位の箇所に接合部材層を設ける設置ステップと、
前記２枚の基板の少なくとも一方の外側から前記基板を透過する光線を照射し、前記光線で前記接合部材層を加熱する加熱ステップと、
加熱した前記接合部材層で前記２枚の基板を接合する接合ステップと、
を有することを特徴とする基板の接合方法。 An installation step of providing a bonding member layer at a location of a portion to be bonded between the two substrates;
A heating step of irradiating a light beam that passes through the substrate from the outside of at least one of the two substrates, and heating the bonding member layer with the light beam;
A bonding step of bonding the two substrates with the heated bonding member layer;
A method for bonding substrates, comprising: 前記接合部材層と一方の前記基板との間には第１の膜を有し、前記接合部材層と他方の前記基板との間には第２の膜を有することを特徴とする請求項１記載の基板の接合方法。   The first film is provided between the bonding member layer and one of the substrates, and the second film is provided between the bonding member layer and the other substrate. The bonding method of the board | substrate of description. 一方の前記基板に設けられた第１の膜と他方の前記基板に設けられた第２の膜とを接触させて前記接合部材層が形成されることを特徴とする請求項１記載の基板の接合方法。   2. The substrate according to claim 1, wherein the bonding member layer is formed by bringing a first film provided on one of the substrates into contact with a second film provided on the other substrate. Joining method. 前記接合部材層は、前記第１の膜または前記第２の膜のいずれか一方に取り付けられることを特徴とする請求項２記載の基板の接合方法。   The method for bonding substrates according to claim 2, wherein the bonding member layer is attached to either the first film or the second film. 前記接合部材層は金属層であることを特徴とする請求項１または２記載の基板の接合方法。   3. The method for bonding substrates according to claim 1, wherein the bonding member layer is a metal layer. 前記２枚の基板の間に前記接合部材層を設ける設置ステップは、仮固定要素を用いて仮付けを行うステップであることを特徴とする請求項１記載の基板の接合方法。   The method for bonding substrates according to claim 1, wherein the installation step of providing the bonding member layer between the two substrates is a step of performing temporary attachment using a temporary fixing element. 前記仮固定要素は樹脂材であること特徴とする請求項６記載の基板の接合方法。   The substrate bonding method according to claim 6, wherein the temporary fixing element is a resin material. 前記接合部材層の周囲に熱分散部材を備えたことを特徴とする請求項１記載の基板の接合方法。   The substrate bonding method according to claim 1, further comprising a heat dispersion member around the bonding member layer. 前記光線はレーザ光であり、スポット照射によって局所的に加熱することを特徴とする請求項１記載の基板の接合方法。   The substrate bonding method according to claim 1, wherein the light beam is a laser beam and is locally heated by spot irradiation. 前記接合部材層は、前記２つの基板の間に閉じた空間を形成する連続的なリング形状を有するように形成されることを特徴とする請求項１記載の基板の接合方法。   2. The method for bonding substrates according to claim 1, wherein the bonding member layer is formed to have a continuous ring shape that forms a closed space between the two substrates. 前記加熱ステップの前に、前記光線を出射する光源が配置される側に位置する前記基板の表面にマスク部材を設けるステップを有し、
前記加熱ステップでは、照射面積の広い前記光線を照射して選択した部位を加熱することを特徴とする請求項１記載の基板の接合方法。 Before the heating step, including a step of providing a mask member on the surface of the substrate located on the side where the light source that emits the light beam is disposed;
The substrate bonding method according to claim 1, wherein in the heating step, the selected portion is heated by irradiating the light beam having a wide irradiation area. 前記２つの基板のうちの一方の基板はガラス基板であり、他方の基板は半導体基板であることを特徴とする請求項１記載の基板の接合方法。   The substrate bonding method according to claim 1, wherein one of the two substrates is a glass substrate and the other substrate is a semiconductor substrate. ２枚の基板を所定箇所で接合した構造を有する半導体装置であって、前記２枚の基板は、前記２枚の基板のうちの少なくともいずれか一方を透過する光線の照射で加熱された金属層によって接合されることを特徴とする半導体装置。   A semiconductor device having a structure in which two substrates are joined at a predetermined location, wherein the two substrates are heated by irradiation with light rays that pass through at least one of the two substrates. A semiconductor device characterized by being bonded by the above. 前記２枚の基板のうち一方はガラス基板であり、他方は半導体基板であることを特徴とする請求項１３記載の半導体装置。   14. The semiconductor device according to claim 13, wherein one of the two substrates is a glass substrate and the other is a semiconductor substrate. 前記ガラス基板と前記金属層との間には第１の膜を有し、前記半導体基板と前記金属層との間には第２の膜を有することを特徴とする請求項１４記載の半導体装置。   15. The semiconductor device according to claim 14, further comprising: a first film between the glass substrate and the metal layer; and a second film between the semiconductor substrate and the metal layer. . 前記半導体基板の表面には固体撮像素子が形成され、前記ガラス基板と前記半導体基板との間における前記固体撮像素子の前面空間は前記金属層で封止されていることを特徴とする請求項１４記載の半導体装置。
The solid-state image sensor is formed on the surface of the semiconductor substrate, and the front space of the solid-state image sensor between the glass substrate and the semiconductor substrate is sealed with the metal layer. The semiconductor device described.
JP2006031251A 2006-02-08 2006-02-08 Substrate bonding method and semiconductor device Pending JP2007214271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006031251A JP2007214271A (en) 2006-02-08 2006-02-08 Substrate bonding method and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006031251A JP2007214271A (en) 2006-02-08 2006-02-08 Substrate bonding method and semiconductor device

Publications (1)

Publication Number Publication Date
JP2007214271A true JP2007214271A (en) 2007-08-23

Family

ID=38492450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006031251A Pending JP2007214271A (en) 2006-02-08 2006-02-08 Substrate bonding method and semiconductor device

Country Status (1)

Country Link
JP (1) JP2007214271A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140128976A (en) * 2012-02-16 2014-11-06 이베게 임모빌리엔 운트 베타일리궁스 게엠베하 Method for the temporary connection of a product substrate to a carrier substrate
KR20150106439A (en) * 2013-01-14 2015-09-21 아이피지 포토닉스 코포레이션 Thermal processing by transmission of mid infra-red laser light through semiconductor substrate
EP3355342A1 (en) * 2017-01-27 2018-08-01 Detection Technology Oy Laser assisted solder bonding of direct conversion compound semiconductor detector
CN113181556A (en) * 2021-04-30 2021-07-30 西北核技术研究所 Irradiation cavity based on medium substrate structure and used for enhancing field intensity in large effector

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140128976A (en) * 2012-02-16 2014-11-06 이베게 임모빌리엔 운트 베타일리궁스 게엠베하 Method for the temporary connection of a product substrate to a carrier substrate
KR102061369B1 (en) 2012-02-16 2020-02-11 에베 그룹 에. 탈너 게엠베하 Method for the temporary connection of a product substrate to a carrier substrate
KR20150106439A (en) * 2013-01-14 2015-09-21 아이피지 포토닉스 코포레이션 Thermal processing by transmission of mid infra-red laser light through semiconductor substrate
KR102131764B1 (en) 2013-01-14 2020-07-08 아이피지 포토닉스 코포레이션 Thermal processing by transmission of mid infra-red laser light through semiconductor substrate
EP3355342A1 (en) * 2017-01-27 2018-08-01 Detection Technology Oy Laser assisted solder bonding of direct conversion compound semiconductor detector
WO2018138174A1 (en) * 2017-01-27 2018-08-02 Detection Technology Oy Laser assisted solder bonding of direct conversion compound semiconductor detector
CN110226221A (en) * 2017-01-27 2019-09-10 芬兰探测技术股份有限公司 The laser assisted solder engagement of direct transition compounds semiconductor detector
JP2020508560A (en) * 2017-01-27 2020-03-19 ディテクション テクノロジー オイ Laser-assisted soldering of direct conversion compound semiconductor detector
US11069649B2 (en) 2017-01-27 2021-07-20 Detection Technology Oy Laser assisted solder bonding of direct conversion compound semiconductor detector
CN113181556A (en) * 2021-04-30 2021-07-30 西北核技术研究所 Irradiation cavity based on medium substrate structure and used for enhancing field intensity in large effector

Similar Documents

Publication Publication Date Title
TWI545662B (en) Method of sealing and contacting substrates using laser light and electronics module
JP2001326290A (en) Method for sealing package, method for manufacturing electronic element module, apparatus for sealing and package article
JP2007214271A (en) Substrate bonding method and semiconductor device
JP5900006B2 (en) Electronic device sealing method
JP2018132741A (en) Electronic component package and method for manufacturing the same
JP2009146979A (en) Photoelectric conversion device
WO2013031944A1 (en) Piezoelectric device
GB2244374A (en) Radiation beam bonding of semiconductor device contacts
JP2009272229A (en) Joining method using laser beam, and method of manufacturing airtight container
JPH06283807A (en) Stack laser
JP2005235864A (en) Optical semiconductor device
JP2009260845A (en) Method of manufacturing piezoelectric vibration device, and piezoelectric vibration device
JP6128566B2 (en) Method of joining material layers together and resulting device
JP2010253493A (en) Method and apparatus for parallel seam welding
KR100638613B1 (en) Wafer level package fabrication method using laser illumination
JP2013042003A (en) Joining method and joining apparatus
JP7455003B2 (en) Semiconductor light emitting device and water sterilization device
JP7397687B2 (en) Light emitting device that emits deep ultraviolet light and water sterilization device using it
JP2005235857A (en) Optical semiconductor device
JP2020040863A (en) Composite article manufacturing method, and composite article
JPS62245640A (en) Manufacture of semiconductor device and equipment thereof
JP2011066201A (en) Joint structure and method of manufacturing the same
JPH04162641A (en) Laser bonding method
JP2004179373A (en) Electronic parts package and its sealing method
JP7173347B2 (en) Lid material for light-emitting device, method for manufacturing lid material, and light-emitting device