JP2007178374A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing effects of a distortion due to thermal expansion generated inside and outside the semiconductor element on the electrical characteristics of a semiconductor element. <P>SOLUTION: The semiconductor device is provided with: a fixing section 12 having openings; a spindle 14 displaceable with respect to the fixing section 12; flexible beams 13 coupled to the spindle 14 at one end and coupled to the fixing section 12 at the other end; and a plurality of support substrates 50 fixed in the bottom of the fixing section 12. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor device comprising a fine mechanical structure and a method for manufacturing the same.

  In recent years, acceleration sensors have been widely used in various industrial fields such as self-propelled vehicles, robots, and various precision instruments. In particular, the demand for semiconductor acceleration sensors using MEMS (Micro Electro Mechanical System) technology has increased rapidly from the viewpoints of being small and lightweight, expecting accurate and reliable operation, and low cost. Yes.

  Some semiconductor acceleration sensors detect acceleration by utilizing a piezoresistance effect, that is, a phenomenon in which a resistance value changes in proportion to a generated stress. Such a semiconductor acceleration sensor generally has a configuration in which a semiconductor chip (hereinafter referred to as a sensor chip) forming a sensor portion is housed in a ceramic package.

  The sensor chip using the piezoresistive effect is, for example, a square-shaped fixing in which a weight portion arranged in the center, four beam portions having flexibility, and one end of each of the four beam portions are fixed. And the weight portion is supported by four beam portions from four directions. A piezoresistive element is attached to each beam portion, and these are connected by a wiring pattern, thereby forming a Wheatstone bridge circuit.

  When a change in speed occurs in the semiconductor acceleration sensor having such a sensor chip, the beam portion bends due to the stress generated by the inertial movement of the weight portion. At the same time, the piezoresistive element attached to the beam portion is also bent. Due to this bending, the resistance value of each piezoresistive element changes, so that the resistance balance of the Wheatstone bridge changes. By measuring this change in resistance balance as a change in current or a change in voltage, acceleration can be detected.

  Further, as a semiconductor acceleration sensor, there is a capacitive acceleration sensor that detects acceleration by using a change in capacitance between electrodes as disclosed in Patent Document 1. Capacitance type acceleration sensor chip is, for example, a main body in which a variable electrode forming layer having a square shape is sandwiched between upper and lower fixed electrode forming layers and a flexible beam on the fixed electrode forming layer. The movable electrode is arranged, and the fixed electrode is arranged on the variable electrode forming layer so as to face the movable electrode.

When acceleration in the direction perpendicular to the fixed electrode surface is applied to the sensor chip, inertial force is applied to the movable electrode. Then, the beam is elastically deformed, the movable electrode swings up and down, the gap with the fixed electrode changes, and the capacitance between the two electrodes changes. The acceleration can be detected by detecting the change in capacitance. This sensor chip is used by being fixed to a circuit board attached to a moving body for detecting acceleration. On this circuit board, an electric circuit necessary for processing a detection signal obtained from the sensor chip and converting it into an acceleration signal is mounted.
JP-A-6-289048

  Incidentally, a support substrate made of Pyrex (registered trademark) glass or the like may be fixed to the bottom surface of the sensor chip that uses the piezoresistance effect described above. The reason for providing the support substrate is that the fixed part has a square shape, the contact area with the package is small, it is necessary to secure the contact area, and when the dicing tape is peeled off with a needle after singulation, the weight part is This is because it is necessary to prevent the needle from contacting. When a support substrate is provided on the sensor chip, there are the following problems.

  That is, the distortion generated due to the difference in thermal expansion coefficient between the sensor chip and the support substrate and the distortion due to thermal expansion generated on the bottom surface of the ceramic package are transmitted to the sensor chip. When such a strain is transmitted to the sensor chip, the measurement of the resistance balance of the piezo element is affected based on the stress caused by the bending of the beam portion, and there is a possibility that the acceleration may be detected even when the acceleration is not applied. As a result, it becomes difficult to stably operate the acceleration sensor in an environment with temperature changes.

  In patent document 1, a convex part is provided in the circuit board by pattern formation, and the sensor chip is fixed via the contact layer at the convex part. The convex portion forms a gap between the circuit board and the sensor chip, and suppresses distortion due to a difference in thermal expansion between the circuit board and the sensor chip.

  However, in the configuration described in Patent Document 1, since the fixed electrode forming layer constituting the mounting surface of the sensor chip to the circuit board is formed over the entire sensor chip, the circuit board is fixed to the fixed electrode forming layer. Even if the transmitted stress can be reduced, the stress transmitted from the fixed electrode forming layer to the upper variable electrode forming layer cannot be reduced. In addition, no countermeasure is taken against distortion due to a difference in thermal expansion between the fixed electrode forming layer and the variable electrode forming layer.

  Accordingly, the present invention has been made in view of the above problems, and a semiconductor device capable of suppressing the influence of distortion due to thermal expansion occurring outside and inside a semiconductor element on the electrical characteristics of the semiconductor element. It is to provide.

  In order to achieve this object, a semiconductor device according to the present invention includes a fixed portion having an opening, a weight portion that is displaceable with respect to the fixed portion, one end connected to the weight portion, and the other end. Comprises a flexible beam portion connected to the fixing portion, and a plurality of support substrates fixed to the bottom surface of the fixing portion.

  In this configuration, the weight portion is fixed so as to be displaceable by the flexible beam portion, and when an acceleration is applied, the beam portion bends due to the inertial movement of the weight portion. The acceleration can be detected by electrically detecting the stress due to the bending of the beam portion. In order to electrically detect the stress due to the bending of the beam portion, for example, a piezoelectric element such as a piezoresistive element may be attached to the beam portion. When the semiconductor element including the fixing portion, the weight portion, the beam portion, and the support substrate is fixed to the package, it is fixed to the bottom surface of the package on the bottom surface side of the fixing portion. At this time, since the plurality of support substrates are fixed to the bottom surface of the fixing portion, the semiconductor element is fixed to the bottom surface of the package with the plurality of support substrates.

  The contact area between the bottom surface of the package and the plurality of support substrates is smaller than when the integral support substrate is fixed to the fixing portion. Therefore, the amount of distortion caused by thermal expansion generated on the bottom surface of the package is transmitted to the fixing portion via the plurality of support substrates. The strain due to thermal expansion generated on the bottom surface of the package is transmitted to the fixing portion via the integrated support substrate. It becomes smaller than the stress to do. As a result, it is possible to suppress the influence of distortion due to thermal expansion generated in the package on the electrical characteristics of the semiconductor element. In other words, it is possible to suppress the influence of distortion generated outside the semiconductor element on the electrical characteristics of the semiconductor element.

  Further, in the semiconductor element, the contact area between the fixed portion and the plurality of support substrates is smaller than when the integral support substrate is fixed to the fixed portion. Therefore, the distortion generated due to the difference in thermal expansion coefficient between the fixed portion and the plurality of support substrates is smaller than the distortion generated due to the difference in thermal expansion coefficient between the fixed portion and the support substrate integrated with the support portion. As a result, it is possible to suppress the influence of strain generated inside the semiconductor element on the electrical characteristics of the semiconductor element.

  Further, another semiconductor device according to the present invention includes a fixed portion having an opening, a weight portion displaceable with respect to the fixed portion, one end connected to the weight portion, and the other end being the fixed portion. A flexible beam connected to the fixing portion, a support substrate fixed to the bottom surface of the fixing portion, a first portion having a first thickness, and a second thickness smaller than the first portion. And a second part having the second part.

  In this structure, a concave portion is formed in the support substrate by the first portion and the second portion thinner than the first portion. When the support substrate is provided with a recess in the contact surface with the package, the contact area between the support substrate having the recess and the bottom surface of the package is larger than that when a support substrate having a uniform thickness is fixed to the package. Small. Therefore, the amount of distortion caused by thermal expansion generated on the bottom surface of the package via the support substrate having the concave portion is transmitted to the fixed portion via the support substrate having a uniform thickness. It becomes smaller than the stress transmitted to the fixed part. As a result, it is possible to suppress the influence of distortion due to thermal expansion generated in the package on the electrical characteristics of the semiconductor element. In other words, it is possible to suppress the influence of distortion generated outside the semiconductor element on the electrical characteristics of the semiconductor element.

  Inside the semiconductor element, the distortion generated by the difference in thermal expansion coefficient between the support substrate and the fixed portion is smaller as the support substrate is thinner. That is, the distortion generated due to the difference in thermal expansion coefficient between the support substrate and the fixed portion becomes smaller as the volume of the support substrate is smaller. The support substrate having the recesses is substantially reduced in thickness as compared with the support substrate having a uniform thickness. Further, the volume of the support substrate having the recess is reduced as compared with the support substrate having a uniform thickness. As a result, the distortion caused by the difference in thermal expansion coefficient between the support substrate having a recess and the fixing part is larger than the distortion generated by the difference in thermal expansion coefficient between the support substrate having a uniform thickness and the fixing part. Is also small. As a result, it is possible to suppress the influence of strain generated inside the semiconductor element on the electrical characteristics of the semiconductor element.

  ADVANTAGE OF THE INVENTION According to this invention, the influence which the distortion by the thermal expansion which generate | occur | produces inside a semiconductor element and the inside of a semiconductor element has on the electrical property of a semiconductor element can be suppressed.

  Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings.

  First, Embodiment 1 according to the present invention will be described in detail with reference to the drawings. Each figure only schematically shows the shape, size, and positional relationship so that the contents of the present invention can be understood. Therefore, the present invention is not limited to the shape, size, It is not limited only to the positional relationship. Moreover, in each figure, a part of hatching in a cross section is abbreviate | omitted for clarity of a structure. Furthermore, the numerical values exemplified below are merely preferred examples of the present invention, and therefore the present invention is not limited to the illustrated numerical values. This is the same in each embodiment described later.

(1) Configuration of Semiconductor Acceleration Sensor Chip 10 and Semiconductor Acceleration Sensor Device 1 First, the configuration of the semiconductor acceleration sensor chip 10 and the semiconductor acceleration sensor device 1 according to this embodiment will be described in detail with reference to the drawings. In this embodiment, a three-dimensional acceleration sensor using a piezoresistance effect, that is, a phenomenon in which the resistance value changes in proportion to the generated stress will be described as an example.

(1-1) Configuration of Semiconductor Acceleration Sensor Chip 10 FIG. 1 is a perspective view illustrating a schematic configuration of a semiconductor acceleration sensor chip 10 that is a three-dimensional acceleration sensor according to the first embodiment. FIG. 2 is a cross-sectional view showing a configuration of the semiconductor acceleration sensor device 1 formed by packaging the semiconductor acceleration sensor chip 10. 3 is a cross-sectional view taken along the line II ′ in FIG. 2, and FIG. 4 is a cross-sectional view taken along the line II-II ′ in FIG. 2 corresponds to a cross-sectional view taken along line III-III ′ in FIGS. 3 and 4.

  As shown in FIG. 1, the semiconductor acceleration sensor chip 10 includes a sensor chip body 10a and a plurality of support substrates 50 fixed to the bottom surface of the sensor chip 10a.

(1-1-1) Sensor chip body 10a
The sensor chip main body 10 a includes a fixed portion 12, a beam portion 13, a weight portion 14, piezoresistive elements 15 i and 15 o, and an electrode pad 16. The fixed portion 12, the beam portion 13, and the weight portion 14 are integrally formed by processing a predetermined semiconductor substrate.

  For example, a silicon substrate can be applied to the predetermined semiconductor substrate in which the fixing portion 12, the beam portion 13, and the weight portion 14 are formed.

  The fixing portion 12 is a ring-shaped member formed by combining, for example, rod-shaped members having a square cross section in a square shape. In other words, for example, it is a ring-shaped member shaped like a square edge, and has a quadrangular opening at the center. However, the fixing portion 12 according to the present invention is not limited to the above-described shape, and may be a ring-shaped member that is shaped like a circular edge, for example. In the following description, for convenience of explanation, the same side as the surface on which the piezoresistive elements 15i and 15o are formed in the beam portion 13, which will be described later, is the upper side.

The length of one side of the outer periphery on the upper surface of the fixed portion 12 can be set to, for example, about 1.8 mm (millimeter). Similarly, the length of one side of the inner periphery on the upper surface of the fixed portion 12 (that is, the length of one side of the opening) can be set to about 1.26 mm, for example. When set in this way, the width of the upper surface of each rod-shaped member forming the fixed portion 12 is about 0.27 mm. Moreover, the thickness of the fixing | fixed part 12 can be about 0.3 mm, for example. (Please check the numerical value)
The beam portion 13 connects the central portion of each side in the inner periphery of the fixed portion 12 as described above and the central portion of each side of the weight portion 14. The beam portion 13 extends from the central portion of each side of the fixed portion 12 toward the center of the fixed portion 12, and is connected to the central portion of each side of the weight portion 14. The semiconductor acceleration sensor chip 10 according to the present embodiment has four beam portions 13.

  Each beam portion 13 is formed to be bent by inertial movement of a weight portion 14 to be described later when acceleration is applied to the semiconductor acceleration sensor chip 10. That is, the beam portion 13 is configured to have flexibility. In the present embodiment, the beam portion 13 is made flexible by setting the width of the upper surface of the beam portion 13 to about 0.086 mm and the thickness to about 0.007 mm, for example. The beam portion 13 is formed so that the upper surface is at the same height as the upper surface of the fixed portion 12 described above. Therefore, the lower surface of the beam portion 13 is arranged on the upper surface side of the lower surface (bottom surface) of the fixed portion 12. Thereby, for example, even when the lower surface of the fixing portion 12 is fixed to the bottom surface 21a of the cavity 21c in the package described later, the deformation of the beam portion 13 is not hindered by the bottom surface 21a of the cavity 21c.

  The weight portion 14 is provided at the tip of the four beam portions 13 described above so as to be disposed at substantially the center of the opening in the square-shaped fixing portion 12. In other words, the weight portion 14 is suspended by the four beam portions 13 so as to be positioned substantially at the center of the opening portion of the fixed portion 12.

  The weight portion 14 functions as a weight to bend the beam portion 13 in accordance with the acceleration applied to the semiconductor acceleration sensor chip 10. In this embodiment, the upper surface of the weight portion 14 is a square, and the length of one side is, for example, about 0.3 mm. Moreover, the thickness of the weight part 14 shall be about 0.2 mm, for example. Further, the weight portion 14 is formed such that the upper surface is included at the same height as the upper surfaces of the fixed portion 12 and the beam portion 13 described above. Therefore, the lower surface of the weight portion 14 is disposed on the upper surface side of the lower surface of the fixed portion 12. Thereby, for example, even when the lower surface of the fixing portion 12 is fixed to the bottom surface 21a of the cavity 21c in the package described later, the displacement of the weight portion 14 relative to the fixing portion 12 is not hindered by the bottom surface 21a of the cavity 21c.

  In addition, a piezoresistive element 15o is attached to the base portion of the fixed portion 12 on the upper surface of each beam portion 13. Similarly, a piezoresistive element 15 i is attached to the base of the weight portion 14 on the upper surface of each beam portion 13. These piezoresistive elements 15i and 15o are electrically connected to, for example, an electrode pad 16 formed on the upper surface of the fixed portion 12 by a wiring pattern (not shown), thereby forming a Wheatstone bridge circuit. Therefore, by detecting the resistance balance of the piezoresistive elements 15i and 15o via the electrode pad 16 and a wiring pattern (not shown), it is possible to detect the amount of bending that has occurred in the beam portion 13, and from this amount of bending. The magnitude and direction of acceleration applied to the semiconductor acceleration sensor chip 10 can be specified.

(1-1-2) Support substrate 50
A plurality of support substrates 50 shown in FIGS. 1, 2, and 4 are fixed to the bottom surface of the sensor chip body 10 a, that is, the bottom surface of the fixing portion 12. The plurality of support substrates 50 are provided to secure a contact area and maintain a fixing strength when the semiconductor acceleration sensor chip 10 is fixed to the bottom surface 21a of the package. As shown in FIG. 4, the plurality of support substrates 50 are fixed to the four corners on the bottom surface of the fixing portion 12. The plurality of support substrates 50 are fixed to the bottom surface of the fixing portion 12 by, for example, anodic bonding. For example, the support substrate 50 having a thickness of 0.15 mm and a length of one side of 0.8 mm is used.

  A gap 60 is formed between the support substrates 50. In the present embodiment, the gap portion 60 is formed in a cross shape so as to pass over the four beam portions 13. That is, the gap portion 60 is formed including a region corresponding to a portion where the beam portion 13 is connected to the fixed portion 12. This is because, by fixing the support substrate 50 while avoiding the portion of the fixing portion 12 close to the beam portion 13, strain transmitted from the package to the fixing portion 12 via the plurality of support substrates 50 is transmitted to the beam portion 13. This is to make it difficult. Further, by fixing the support substrate 50 while avoiding the portion of the fixing portion 12 close to the beam portion 13, the stress generated by the difference in thermal expansion coefficient between the plurality of support substrates 50 and the fixing portion 12 is caused by the beam portion 13. This is to make it difficult to be transmitted to. Since the semiconductor acceleration sensor chip 10 is configured to detect the stress generated in the beam portion 13 by the acceleration by the piezoresistive elements 15o and 15i, the detection accuracy is reduced when a stress other than the acceleration is applied. When a plurality of support substrates 50 are fixed to the fixing part 12 as in the present embodiment, the beam part 13 is transmitted to the beam part 13 by avoiding a region corresponding to a part connected to the fixing part 12. The distortion can be reduced and the detection accuracy of the semiconductor acceleration sensor chip 10 can be improved.

(1-2) Configuration of Semiconductor Acceleration Sensor Device 1 As shown in FIGS. 2 to 4, the semiconductor acceleration sensor device 1 includes a semiconductor acceleration sensor chip 10 including the above-described sensor chip body 10a and a plurality of support substrates 50; It has a lower container 21 and an upper lid 25. The lower container 21 and the upper lid 25 form a package for housing the semiconductor acceleration sensor chip 10. In the following, for convenience of explanation, the side where the upper lid 25 is located with respect to the lower container is referred to as the upper side.

  In this configuration, the semiconductor acceleration sensor chip 10 is fixed to the substantially central region of the bottom surface 21a of the cavity 21c of the lower container 21 using an adhesive. As the adhesive, for example, a resin having a low elastic modulus and a self-adhesive property of 100 MPa or less is used. Silicone or the like can be used as such a resin.

  The lower container 21 constituting the package for housing the semiconductor acceleration sensor chip 10 is a ceramic package having a laminated structure, for example, and as shown in FIG. 2, a cavity 21c for housing the semiconductor acceleration sensor chip 10 Have

  As shown in FIGS. 2 and 3, the side wall of the lower container 21 has a step surface 21 b lower than the upper surface (the surface to which the upper lid 25 is bonded) on the cavity 21 c side. A part of the wiring pattern 23 formed inside the lower container 21 is exposed on the step surface 21b. The electrode pad 16 in the semiconductor acceleration sensor chip 10 is electrically connected to the exposed portion of the wiring pattern 23 using a metal wire 26.

  The wiring pattern 23 formed in the lower container 21 is electrically connected to a metal pad (hereinafter referred to as a foot pattern 22) formed on the lower surface of the lower container 21, as shown in FIG. The foot pattern 22 is an electrode pattern for electrically connecting to an electrode pad on a circuit board (not shown).

  Further, as shown in FIGS. 2 and 3, the electrode pad 16 in the semiconductor acceleration sensor chip 10 accommodated in the cavity 21c of the lower container 21 includes a wiring pattern 23 exposed on the step surface 21b of the lower container 21, and Electrical connection is made using a metal wire 26. The metal wire 26 can be formed of a metal wire such as gold, copper, or aluminum.

  As described above, the opening of the lower container 21 in which the semiconductor acceleration sensor chip 10 is accommodated is sealed by the upper lid 25 as shown in FIG. The upper lid 25 is fixed so as to seal the upper surface of the lower container 21 using a thermosetting resin 24 such as an epoxy resin. As the material of the upper lid 25, for example, 42 alloy alloy or stainless steel can be applied. Further, the inside of the sealed package (21, 25) is purged with, for example, nitrogen gas or dry air.

(2) Manufacturing Method of Semiconductor Acceleration Sensor Chip 10 and Semiconductor Acceleration Sensor Device 1 Next, a manufacturing method of the semiconductor acceleration sensor device 1 according to this embodiment will be described in detail with reference to the drawings.

(2-1) Manufacturing Method of Semiconductor Acceleration Sensor Chip 10 First, a semiconductor wafer 100 made of, for example, silicon on which a plurality of sensor chip main bodies 10a of FIG. ) A glass wafer 200 made of glass or the like is prepared.

  As shown in FIG. 5A, a semiconductor wafer 100 having a plurality of sensor chips 10a formed thereon is placed on a glass wafer 200. At this time, the semiconductor wafer 100 is placed on the glass wafer 200 so that the bottom surface of the sensor chip main body 10a, that is, the bottom surface of the fixing portion 12, and the glass wafer 200 face each other. The planar alignment of the glass wafer 200 and the semiconductor wafer 100 is performed by aligning the orientation flats of the glass wafer 200 and the semiconductor wafer 100, for example. Next, a voltage is applied to the semiconductor wafer 100 and the glass wafer 200 from above and below to anodic bond the semiconductor wafer 100 and the glass wafer 200. At this time, the bottom surfaces of the fixing portions 12 of the plurality of sensor chip main bodies 10 a included in the semiconductor wafer 100 are anodically bonded to the glass wafer 200.

  As shown in FIG. 5B, the anodic bonded semiconductor wafer 100 and glass wafer 200 are fixed to the dicing tape 300 on the semiconductor wafer 100 side. At this time, the dicing tape 300 is fixed to the upper surfaces of the plurality of sensor chip main bodies 10a included in the semiconductor wafer 100.

  Thereafter, as shown in FIGS. 5C and 6A, the glass wafer 200 is cut with a dicing blade 501.

  FIG. 9 is a plan view of the glass wafer 200 and the semiconductor wafer 100 in which the gap 60 is formed. In the steps of FIGS. 5C and 6A, the glass wafer 200 is cut by the thickness of the glass wafer 200 so that the pattern of the gap 60 shown in FIG. 9 is formed. By this cutting, a gap portion 60 shown in FIG. 9 is formed, and the glass wafer 200 is divided into a plurality of support substrates 50 within the area of each sensor chip body 10a. Although not shown in FIG. 9, as shown in FIG. 6A, the wafer 200 is cut with a dicing blade even on the boundary of each sensor chip body 10a to form a gap 70. The gap 70 is for facilitating cutting when dicing the semiconductor acceleration sensor chip 10 into individual pieces in a later step.

  As shown in FIG. 6B, the semiconductor wafer 100 and the glass wafer 200 are removed from the dicing tape 300, and the glass wafer 200 side is fixed to the dicing tape 400 as shown in FIG. 6C. Thereafter, the semiconductor wafer 100 and the glass wafer 200 fixed to the dicing tape 400 are diced by a dicing blade 502 along a scribe line (not shown) formed at the boundary of the sensor chip main body 10a, and each sensor chip main body is diced. 10 is divided into pieces. In this singulation, each sensor chip body 10a is divided along the boundary shown in FIG. 9, and the glass wafer 200 is also divided for each sensor chip body 10a. As a result, the semiconductor acceleration sensor chip 10 including the sensor chip main body 10a and the four support substrates 50 fixed to the bottom surface of the sensor chip main body 10a shown in FIG. 6D is obtained.

  6 (c), the gap 70 is formed by cutting the glass wafer 200 on the boundary of each sensor chip body 10a in the process of FIG. 6 (a). In the dicing process, cutting is performed while removing the cut object with water. However, as shown in FIG. 6C, the gap 70 is formed below the cut portion of the semiconductor wafer 100, so that the drainage can be easily performed. The removal of becomes better.

(2-1) Manufacturing Method of Semiconductor Acceleration Sensor Device 1 Next, as shown in FIG. 7A, an adhesive is applied to the bottom surfaces of the plurality of support substrates 50 in the semiconductor acceleration sensor chip 10. As the adhesive, for example, a resin having a low elastic modulus and a self-adhesive property of 100 MPa or less is used. Silicone or the like can be used as such a resin. Next, the semiconductor acceleration sensor chip 10 to which the adhesive is applied is placed at a predetermined position on the bottom surface of the cavity 21c of the lower container 21, and heat treatment is performed in a state where these are pressed from above and below. As a result, as shown in FIG. 7B, the semiconductor acceleration sensor chip 10 is fixed to the bottom surface 21a of the cavity 21c. In this heat treatment, for example, the pressure can be normal pressure, the temperature can be 180 ° C., and the treatment time can be 1 hour.

Next, as shown in FIG. 8A, for example, a gold metal wire 26 is bonded to electrically connect the electrode pad 16 in the semiconductor acceleration sensor chip 10 and the exposed wiring pattern 23 in the lower container 21. Connect to. For bonding the metal wire 26, for example, a thermocompression bonding method using ultrasonic waves with a pressure of 30 gf (/ cm ² ) and a temperature of 230 ° C. can be used. Further, since the electrode pad 16 to which one end of the metal wire 26 is bonded is formed on the fixed portion 12 in the semiconductor acceleration sensor chip 10, the beam portion 13 in the semiconductor acceleration sensor chip 10 is bonded to the metal wire 26. Etc. will not be damaged.

Next, as shown in FIG. 8B, for example, an upper lid 25 such as 42 alloy alloy or stainless steel is prepared, and a thermosetting resin 24 such as an epoxy resin is applied to the lower surface of the upper lid 25. Next, the upper lid 25 is mounted on the lower container 21 by placing the upper lid 25 on the lower container 21 and performing heat treatment in a state where these are pressurized from above and below. In this heat treatment, for example, the pressure can be 5 kg (/ cm ² ), the temperature can be 150 ° C., and the treatment time can be 2 hours. Thereby, the semiconductor acceleration sensor device 1 as shown in FIGS. 2 to 4 is manufactured. When sealing the lower container 21 with the upper lid 25, the cavity 21c is purged with, for example, nitrogen gas or dry air.

(3) Operational Effect The semiconductor acceleration sensor chip 10 according to the present embodiment includes a fixed portion 12 having an opening, a weight portion 14 that can be displaced with respect to the fixed portion 12, and one end connected to the weight portion 14 and A flexible beam portion 13 having the other end connected to the fixing portion 12 and a plurality of support substrates 50 fixed to the bottom surface of the fixing portion 12 are provided.

  In this configuration, the weight portion 14 is fixed so as to be displaceable by the flexible beam portion 13, and when the acceleration is applied, the beam portion 13 is bent by the inertial movement of the weight portion 14. The stress due to the bending of the beam portion 13 is electrically detected by the piezoresistive elements 15i and 15o. When the semiconductor acceleration sensor chip 10 including the fixing portion 12, the weight portion 14, the beam portion 13, and the support substrate 50 is fixed to the package, it is fixed to the bottom surface of the package on the bottom surface side of the fixing portion 12. At this time, since the plurality of support substrates 50 are fixed to the bottom surface of the fixing portion 12, the semiconductor acceleration sensor chip 10 is fixed to the bottom surface 21 a of the package with the plurality of support substrates 50.

  The contact area between the bottom surface 21a of the package and the plurality of support substrates 50 is smaller than when the integral support substrate is fixed to the bottom surface 21a of the package. Therefore, the amount of distortion due to thermal expansion generated on the bottom surface 21a of the package is transmitted to the fixing portion 12 via the plurality of support substrates 50 is the amount of distortion caused by thermal expansion generated on the bottom surface 21a of the package via the integral support substrate. It becomes smaller than the stress transmitted to the fixed part 12. As a result, it is possible to suppress the influence of distortion due to thermal expansion generated in the package on the electrical characteristics of the semiconductor acceleration sensor chip 10. In other words, the influence of external strain on the semiconductor acceleration sensor chip 10 on the electrical characteristics of the semiconductor acceleration sensor chip 10 can be suppressed.

  Further, in the semiconductor acceleration sensor chip 10, the contact area between the fixed portion 12 and the plurality of support substrates 50 is smaller than when the integral support substrate is fixed to the fixed portion 12. Therefore, the distortion generated due to the difference in thermal expansion coefficient between the fixed portion 12 and the plurality of support substrates 50 is smaller than the distortion generated due to the difference in thermal expansion coefficient between the fixed portion 12 and the integral support substrate. . As a result, it is possible to suppress the influence of distortion generated in the semiconductor acceleration sensor chip 10 on the electrical characteristics of the semiconductor acceleration sensor chip 10.

  Further, a gap portion 60 is formed between the plurality of support substrates 50 fixed to the bottom surface of the fixing portion 12. The gap 60 is formed including a region corresponding to a portion where the beam portion 13 is connected to the fixed portion 12. By fixing the support substrate 50 while avoiding the portion of the fixing portion 12 close to the beam portion 13, the strain transmitted from the package to the fixing portion 12 via the plurality of support substrates 50 becomes difficult to be transmitted to the beam portion 13. Further, by fixing the support substrate 50 while avoiding the portion of the fixing portion 12 close to the beam portion 13, the stress generated by the difference in thermal expansion coefficient between the plurality of support substrates 50 and the fixing portion 12 is caused by the beam portion 13. It becomes difficult to be transmitted to. Since the semiconductor acceleration sensor chip 10 is configured to detect the stress generated in the beam portion 13 by the acceleration by the piezoresistive elements 15o and 15i, the detection accuracy is reduced when a stress other than the acceleration is applied. When a plurality of support substrates 50 are fixed to the fixing part 12 as in the present embodiment, the beam part 13 is transmitted to the beam part 13 by avoiding a region corresponding to a part connected to the fixing part 12. The distortion can be reduced and the detection accuracy of the semiconductor acceleration sensor chip 10 can be improved.

  In the method of manufacturing the semiconductor acceleration sensor chip 10 according to the present embodiment, the semiconductor wafer 100 on which the sensor chip body 10a is formed and the glass wafer 200 are anodically bonded, and the glass wafer 200 is cut into a predetermined pattern to cut the gap 60. Thereby, the glass wafer 200 is divided into a plurality of pieces in each sensor chip body 10a to form a plurality of support substrates 50. Thereafter, by separating the sensor chip body 10a into pieces, the plurality of support substrates 50 are also separated into pieces for each sensor chip body 10a. In this manufacturing method, it is possible to obtain the semiconductor acceleration sensor chip 10 with high detection accuracy only by adding the step of forming the gap 60 in the glass wafer 200 in the step of forming the support substrate on the bottom surface of the sensor chip body 10a. it can. Therefore, the manufacture of the semiconductor acceleration sensor chip 10 is easy.

  In the method of manufacturing the semiconductor acceleration sensor chip 10 according to the present embodiment, the semiconductor acceleration sensor chip 10 is provided with the structure for relaxing the stress generated outside and inside, that is, the support substrate 50 divided into a plurality of parts. When the sensor chip 10 is packaged, it is possible to omit a special operation such as providing a spacer between the sensor chip 10 and the package for stress relaxation, thereby improving work efficiency.

(4) Modification In FIG. 5A, before the step of placing the semiconductor wafer 100 on the glass wafer 200, a region to be the support substrate 50 on the surface of the glass wafer 200 to be bonded to the semiconductor wafer 100. In addition, a process of forming a plurality of protrusions 600 shown in FIG. 18A or a plurality of grooves 700 shown in FIG. 18B may be added. It is desirable to form the plurality of protrusions 600 or the plurality of grooves 700 uniformly over the entire first portion.

  If the plurality of protrusions 600 or the plurality of grooves 700 are formed, the contact area between the support substrate 50 and the fixing portion 12 is further reduced. As a result, the amount of distortion due to thermal expansion generated in the package transmitted to the fixing portion 12 via the support substrate 50 can be reduced. Further, distortion due to the difference in thermal expansion coefficient between the support substrate 50 and the fixed portion 12 can be reduced.

(1) Configuration of Semiconductor Acceleration Sensor Chip 10 and Semiconductor Acceleration Sensor Device 1 FIG. 10 is a perspective view illustrating a schematic configuration of a semiconductor acceleration sensor chip 10 that is a three-dimensional acceleration sensor according to the second embodiment. FIG. 11 is a cross-sectional view showing a configuration of the semiconductor acceleration sensor device 1 formed by packaging the semiconductor acceleration sensor chip 10. 12 is a cross-sectional view taken along the line II ′ in FIG. 11, and FIG. 13 is a cross-sectional view taken along the line II-II ′ in FIG. FIG. 11 corresponds to a cross-sectional view taken along line III-III ′ in FIGS. 12 and 13.

  Here, the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted. Hereinafter, a description will be given focusing on differences from the first embodiment.

  As shown in FIGS. 10 to 13, the semiconductor acceleration sensor chip 10 of this embodiment includes a support substrate 50 a in which recesses 60 a are formed instead of the plurality of support substrates 50 of the semiconductor acceleration sensor chip 10 of the first embodiment. It has.

  The support substrate 50a includes a first portion 50b having a first thickness and a second portion 50c having a second thickness smaller than the first thickness. The second portion 50c is formed at a position corresponding to the recess 60a. That is, the support substrate 50a has the second portion 50c thinner than the first portion 50b, so that the recess 60a is formed. The recess 60 a is formed on the surface opposite to the surface on which the support substrate 50 a is fixed to the bottom surface of the fixing portion 12 of the acceleration sensor 10, that is, the surface fixed to the bottom surface 21 a of the lower container 21. The thickness of the first portion 50b can be 0.15 mm, the thickness of the second portion 50c can be 0.1 mm, and the depth of the recess 60a can be 0.05 mm, for example.

  The support substrate 50a is joined to the bottom surface of the fixed portion 12 by anodic bonding on the surface where the recess 60a is not formed. When the semiconductor acceleration sensor chip 10 is viewed from the bottom surface side, as shown in FIG. 13, the recess 60 a is continuously formed including a region corresponding to a portion where the beam portion 13 is connected to the fixing portion 12. . In the present embodiment, in the semiconductor acceleration sensor chip 10, the recess 60a is formed in a cross shape. In this embodiment, the concave portion 60a is formed continuously. However, if the concave portion 60a is formed including at least the region corresponding to the portion where the beam portion 13 is connected to the fixing portion 12, the support substrate is formed at the portion of the concave portion 60a. Since 50a does not directly contact the bottom surface 21a of the package, strain transmitted from the package to the beam portion 13 via the support substrate 50a can be reduced. Further, if the concave portion 60a is formed including at least the region corresponding to the portion where the beam portion 13 is connected to the fixing portion 12, the thickness of the supporting substrate 50a is small at the portion where the supporting substrate 50a contacts the fixing portion 12. It is possible to reduce the amount of distortion generated by the difference in thermal expansion coefficient between 50a and the fixed portion 12 to the beam portion 13.

(2) Manufacturing Method of Semiconductor Acceleration Sensor Chip 10 and Semiconductor Acceleration Sensor Device 1 Next, a manufacturing method of the semiconductor acceleration sensor device 1 according to this embodiment will be described in detail with reference to the drawings.

(2-1) Manufacturing Method of Semiconductor Acceleration Sensor Chip 10 Next, a manufacturing method of the semiconductor acceleration sensor chip 10 according to this embodiment according to this embodiment will be described in detail with reference to the drawings.

  First, a semiconductor wafer 100 having a plurality of sensor chip bodies 10a of FIG. 1 formed by a known semiconductor microfabrication technique and a glass wafer 200 made of Pyrex (registered trademark) glass or the like are prepared.

  Next, as shown in FIG. 14A, a notch is formed in the glass wafer 200 by dicing to form a recess 60 a in the glass wafer 200. As a result, a first portion 50b having a first thickness and a second portion 50c smaller than the first thickness are formed on the glass wafer 20.

  As shown in FIG. 14B, the glass wafer 200 is placed on the bottom surface of the fixing portion 12 of the sensor chip body 10 a included in the semiconductor wafer 100. At this time, the surface of the glass wafer 200 opposite to the surface where the recess 60 a is formed, that is, the surface of the glass wafer 200 where the recess 60 a is not formed is placed on the semiconductor wafer 100. By this placement, the sensor chip main body 10a and the support substrate 50a of the glass wafer 200 are aligned in the positional relationship shown in FIG. That is, the recess 60 a is disposed so as to pass through the center of each side of the sensor chip body 10 a, and the recess 60 a includes a region corresponding to a portion where the beam portion 13 is connected to the fixing portion 12.

  As shown in FIG. 14C, a voltage is applied to the semiconductor wafer 100 and the glass wafer 200 from above and below to anodic bond the semiconductor wafer 100 and the glass wafer 200. At this time, the bottom surfaces of the fixing portions 12 of the plurality of sensor chip main bodies 10 a included in the semiconductor wafer 100 are anodically bonded to the glass wafer 200.

  As shown in FIG. 14D, the anodic bonded semiconductor wafer 100 and glass wafer 200 are fixed to the dicing tape 300 on the semiconductor wafer 100 side. At this time, the dicing tape 300 is fixed to the surface of the glass wafer 200 where the recess 60a is formed. Thereafter, the semiconductor wafer 100 and the glass wafer 200 fixed to the dicing tape 300 are diced by a dicing blade 501 along a scribe line (not shown) formed at the boundary of the sensor chip main body 10a, and each sensor chip main body is diced. 10 is divided into pieces. In this separation, each sensor chip body 10a is divided along the boundary shown in FIG. 17, and the glass wafer 200 is also divided for each sensor chip body 10a. As a result, the semiconductor acceleration sensor chip 10 including the sensor chip main body 10a and the support substrate 50a fixed to the bottom surface of the sensor chip main body 10a shown in FIG. 10 is obtained.

(2-1) Manufacturing Method of Semiconductor Acceleration Sensor Device 1 Next, as shown in FIG. 15A, on the surface of the semiconductor acceleration sensor chip 10 where the recess 60a of the support substrate 50a is formed, the first portion 50b. Apply adhesive to As the adhesive, for example, a resin having a low elastic modulus and a self-adhesive property of 100 MPa or less is used. Silicone or the like can be used as such a resin. Next, the semiconductor acceleration sensor chip 10 to which the adhesive is applied is placed at a predetermined position on the bottom surface of the cavity 21c of the lower container 21, and heat treatment is performed in a state where these are pressed from above and below. Thereby, as shown in FIG. 15B, the semiconductor acceleration sensor chip 10 is fixed to the bottom surface 21a of the cavity 21c. In this heat treatment, for example, the pressure can be normal pressure, the temperature can be 180 ° C., and the treatment time can be 1 hour.

Next, as shown in FIG. 16A, for example, a gold metal wire 26 is bonded to electrically connect the electrode pad 16 in the semiconductor acceleration sensor chip 10 and the exposed wiring pattern 23 in the lower container 21. Connect to. For bonding the metal wire 26, for example, a thermocompression bonding method using ultrasonic waves with a pressure of 30 gf (/ cm ² ) and a temperature of 230 ° C. can be used. Further, since the electrode pad 16 to which one end of the metal wire 26 is bonded is formed on the fixed portion 12 in the semiconductor acceleration sensor chip 10, the beam portion 13 in the semiconductor acceleration sensor chip 10 is bonded to the metal wire 26. Etc. will not be damaged.

Next, as shown in FIG. 16B, for example, an upper lid 25 such as 42 alloy alloy or stainless steel is prepared, and a thermosetting resin 24 such as an epoxy resin is applied to the lower surface of the upper lid 25. Next, the upper lid 25 is mounted on the lower container 21 by placing the upper lid 25 on the lower container 21 and performing heat treatment in a state where these are pressurized from above and below. In this heat treatment, for example, the pressure can be 5 kg (/ cm ² ), the temperature can be 150 ° C., and the treatment time can be 2 hours. Thereby, the semiconductor acceleration sensor device 1 as shown in FIGS. 11 to 13 is manufactured. When sealing the lower container 21 with the upper lid 25, the cavity 21c is purged with, for example, nitrogen gas or dry air.

(3) Operational Effect The semiconductor acceleration sensor chip 10 according to the present embodiment includes a fixed portion 12 having an opening, a weight portion 14 that can be displaced with respect to the fixed portion 12, and one end connected to the weight portion 14 and A flexible beam portion 13 having the other end connected to the fixing portion 12, a support substrate 50a fixed to the bottom surface of the fixing portion 12, and a first portion 50b having a first thickness; And a support substrate 50 having a second portion 50b having a second thickness smaller than one portion.

  The support substrate 50a is provided with a first portion 50b and a second portion 50b that is thinner than the first portion 50b, and a recess 60a is formed on the contact surface with the package. In this configuration, the contact area between the support substrate 50a having the recess 60a and the bottom surface 21a of the package is smaller than when the support substrate having a uniform thickness is fixed to the bottom surface 21a of the package. Therefore, the amount of distortion caused by thermal expansion generated on the bottom surface 21a of the package to the fixing portion 12 via the support substrate 50a having the recess 60a is such that the distortion caused by thermal expansion generated on the bottom surface 21a of the package has a uniform thickness. It becomes smaller than the stress transmitted to the fixed part through the support substrate. As a result, it is possible to suppress the influence of distortion due to thermal expansion generated in the package on the electrical characteristics of the semiconductor acceleration sensor chip 10. In other words, it is possible to suppress the influence of distortion generated outside the semiconductor element on the electrical characteristics of the semiconductor element.

  Further, in the semiconductor acceleration sensor chip 10, the distortion generated due to the difference in thermal expansion coefficient between the support substrate 50a and the fixed portion 12 is smaller as the support substrate 50a is thinner. That is, the distortion generated by the difference in thermal expansion coefficient between the support substrate 50a and the fixed portion 12 becomes smaller as the volume of the support substrate 50a is smaller. The support substrate 50a having the recess 60a is substantially reduced in thickness as compared with a support substrate having a uniform thickness. Further, the volume of the support substrate 50a having the recess 60a is reduced as compared with the support substrate having a uniform thickness. As a result, the distortion caused by the difference in thermal expansion coefficient between the support substrate 50a having the recess 60a and the fixed portion 12 is caused by the difference in thermal expansion coefficient between the support substrate having a uniform thickness and the fixed portion 12. Less than the distortion that occurs. The influence which the distortion which generate | occur | produces in the semiconductor acceleration sensor chip 10 has on the electrical property of the semiconductor acceleration sensor chip 10 can be suppressed.

  The contact area between the bottom surface 21 a of the package and the plurality of support substrates 50 is smaller than when the integral support substrate is fixed to the fixing portion 12. Therefore, the amount of distortion due to thermal expansion generated on the bottom surface 21a of the package is transmitted to the fixing portion 12 via the plurality of support substrates 50 is the amount of distortion caused by thermal expansion generated on the bottom surface 21a of the package via the integral support substrate. It becomes smaller than the stress transmitted to the fixed part 12. As a result, it is possible to suppress the influence of distortion due to thermal expansion generated in the package on the electrical characteristics of the semiconductor acceleration sensor chip 10. In other words, the influence of the strain transmitted from the outside on the electrical characteristics of the semiconductor acceleration sensor chip 10 can be suppressed.

  Further, in the semiconductor acceleration sensor chip 10, the contact area between the fixed portion 12 and the plurality of support substrates 50 is smaller than when the integral support substrate is fixed to the fixed portion 12. Therefore, the distortion generated due to the difference in thermal expansion coefficient between the fixed portion 12 and the plurality of support substrates 50 is smaller than the distortion generated due to the difference in thermal expansion coefficient between the fixed portion 12 and the integral support substrate. . As a result, it is possible to suppress the influence of distortion generated in the semiconductor acceleration sensor chip 10 on the electrical characteristics of the semiconductor acceleration sensor chip 10.

  A recess 60a is formed on the surface of the support substrate 50a that is fixed to the package. The concave portion 60 a is formed including a region corresponding to a portion where the beam portion 13 is connected to the fixed portion 12. The recess 60a does not contact the bottom surface 21a of the package. By not directly contacting the bottom surface 21a of the package at the portion of the fixing portion 12 close to the beam portion 13, the strain transmitted from the package to the fixing portion 12 via the support substrate 50a becomes difficult to be transmitted to the beam portion 13. Further, since the support substrate 50a is thin at the portion of the fixed portion 12 close to the beam portion 13, that is, the second portion 50c is generated due to a difference in thermal expansion coefficient between the support substrate 50a and the fixed portion 12 at this portion. Stress to be reduced. Since the semiconductor acceleration sensor chip 10 is configured to detect the stress generated in the beam portion 13 by the acceleration by the piezoresistive elements 15o and 15i, the detection accuracy is reduced when a stress other than the acceleration is applied. As in the present embodiment, the support substrate 50a is formed in the thin second portion in the region corresponding to the portion where the beam portion 13 is connected to the fixed portion 12, and the recess 60a is formed in the contact surface with the package. Thus, the distortion transmitted to the beam portion 13 can be reduced, and the detection accuracy of the semiconductor acceleration sensor chip 10 can be improved.

  In the method of manufacturing the semiconductor acceleration sensor chip 10 according to the present embodiment, after the recess 60a is formed in the glass wafer 50a, the semiconductor wafer 100 on which the sensor chip body 10a is formed and the glass wafer 200 are anodically bonded, and the sensor chip body 10a. Is divided into pieces. In this manufacturing method, the semiconductor acceleration sensor chip 10 with high detection accuracy can be obtained only by adding a step of forming the recess 60a in the glass wafer 200 before anodic bonding of the semiconductor wafer 100 and the glass wafer 200. . Therefore, the manufacture of the semiconductor acceleration sensor chip 10 is easy.

  In the method of manufacturing the semiconductor acceleration sensor chip 10 according to the present embodiment, the semiconductor acceleration sensor chip 10 is provided with the support substrate 50a having the configuration in which the stress generated outside and inside the semiconductor acceleration sensor chip 10 is relaxed, that is, the recess 60a. When packaging 10, it becomes possible to omit a special operation such as providing a spacer between the package for stress relaxation and to improve work efficiency.

(4) Modification In FIG. 14B, before the step of placing the glass wafer 200 on the semiconductor wafer 100, the surface of the glass wafer 200 to be bonded to the semiconductor wafer 100, that is, the first portion 50b. A step of forming a plurality of protrusions 600 shown in FIG. 18A or a plurality of grooves 700 shown in FIG. 18B on the surface bonded to the semiconductor wafer 100 may be added. It is desirable to form the plurality of protrusions 600 or the plurality of grooves 700 uniformly over the entire first portion.

  If the plurality of protrusions 600 or the plurality of grooves 700 are formed, the contact area between the support substrate 50a and the fixed portion 12 is reduced. As a result, the amount of distortion due to thermal expansion generated in the package transmitted to the fixing portion 12 via the support substrate 50 can be reduced. In addition, distortion due to the difference in thermal expansion coefficient between the support substrate 50a and the fixed portion 12 can be reduced.

1 is a perspective view showing a schematic configuration of a semiconductor acceleration sensor chip 10 of Example 1. FIG. It is sectional drawing which shows the structure of the semiconductor acceleration sensor apparatus 1 of Example 1. FIG. It is a figure which shows the I-I 'cross-section in FIG. It is a figure which shows the II-II 'cross-section in FIG. It is a process diagram which shows the manufacturing method of the semiconductor acceleration sensor chip 10 by Example 1 of this invention (1). It is a process figure which shows the manufacturing method of the semiconductor acceleration sensor chip 10 by Example 1 of this invention (2). It is a process figure which shows the manufacturing method of the semiconductor acceleration sensor apparatus 1 by Example 1 of this invention (1). It is a process figure which shows the manufacturing method of the semiconductor acceleration sensor apparatus 1 by Example 1 of this invention (2). It is a top view of the glass wafer 200 and the semiconductor wafer 100 (before singulation) in which the clearance gap part 60 was formed. It is a perspective view which shows schematic structure of the semiconductor acceleration sensor chip 10 of Example 2. FIG. It is sectional drawing which shows the structure of the semiconductor acceleration sensor apparatus 1 of Example 2. FIG. It is a figure which shows the I-I 'cross section structure in FIG. It is a figure which shows the II-II 'cross-section in FIG. It is a process figure which shows the manufacturing method of the semiconductor acceleration sensor chip 1 by Example 2 of this invention. It is a process figure which shows the manufacturing method of the semiconductor acceleration sensor apparatus 1 by Example 2 of this invention (1). It is a process figure which shows the manufacturing method of the semiconductor acceleration sensor apparatus 1 by Example 2 of this invention (2). FIG. 3 is a plan view showing a state in which the glass wafer 200 on which the recess 60a is formed is placed on the semiconductor wafer 100 (before singulation). It is a figure which shows the projection part 600 (a) and groove part 700 (b) which are formed in the glass wafer 200. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 2 Semiconductor acceleration sensor apparatus 10 Semiconductor acceleration sensor chip 12 Fixed part 13 Beam part 14 Weight part 15i, 15o Piezoresistive element 16 Electrode pad 21 Lower container 21a Bottom surface 21b Step surface 21c Cavity 22 Foot pattern 23 Wiring pattern 24 Thermosetting Resin 25 Upper lid 26 Metal wire 50, 50a Support substrate 50b First part 50c Second part 60 Gap part 60a Concave part 100 Semiconductor wafer 200 Glass wafer 600 Projection part 700 Groove part

Claims (20)

A fixed portion having an opening;
A weight portion displaceable with respect to the fixed portion;
A flexible beam portion having one end connected to the weight portion and the other end connected to the fixed portion;
A plurality of support substrates fixed to the bottom surface of the fixing portion;
A semiconductor device comprising:   2. The semiconductor device according to claim 1, wherein the plurality of support substrates form gap portions in regions corresponding to portions where the beam portions are connected to the fixed portion.   3. The semiconductor device according to claim 1, wherein at least one of the plurality of support substrates has a plurality of protrusions on a surface fixed to a bottom surface of the fixing portion.   3. The semiconductor device according to claim 1, wherein at least one of the plurality of support substrates has a plurality of groove portions on a surface fixed to a bottom surface of the fixing portion. A fixed portion having an opening;
A weight portion displaceable with respect to the fixed portion;
A flexible beam portion having one end connected to the weight portion and the other end connected to the fixed portion;
A support substrate fixed to a bottom surface of the fixed portion, the support substrate having a first portion having a first thickness and a second portion having a second thickness smaller than the first portion; ,
A semiconductor device comprising:   The semiconductor device according to claim 5, wherein the second portion of the support substrate forms a concave portion on a surface opposite to a surface fixed to the bottom surface of the fixing portion.   The semiconductor device according to claim 5, wherein the second front portion is disposed in a region corresponding to a portion where the beam portion is connected to the fixed portion.   The semiconductor device according to claim 5, wherein the first portion has a plurality of protrusions on a surface fixed to a bottom surface of the fixing portion.   The semiconductor device according to claim 5, wherein the first portion has a plurality of groove portions on a surface fixed to a bottom surface of the fixing portion. Further comprising a package having a cavity therein;
10. The semiconductor according to claim 1, wherein the support substrate is fixed to the package on a surface opposite to a surface fixed to a bottom surface of the fixing portion in the cavity. apparatus. Preparing a first wafer including a plurality of semiconductor element bodies and a second wafer;
Bonding the second wafer to the first wafer;
Dividing the second wafer into a plurality of regions corresponding to the semiconductor element bodies, and forming a plurality of support substrates on the second wafer for each semiconductor element body;
Separating each semiconductor element body;
A method for manufacturing a semiconductor device, comprising: The semiconductor element body includes a fixed portion having an opening, a weight portion that is displaceable with respect to the fixed portion, one end connected to the weight portion, and the other end connected to the fixed portion. A flexible beam portion, and
In the step of forming the plurality of support substrates, a plurality of the second wafers are formed so that the plurality of support substrates form gaps in a region corresponding to a portion where the beam portion is connected to the fixed portion. The method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is divided into two parts. Before the step of bonding the second wafer to the first wafer, a step of forming a plurality of protrusions on the surface of the second wafer to be fixed to the first wafer in the regions to be the plurality of support substrates. Further comprising,
A method for manufacturing a semiconductor device according to claim 11. Before the step of bonding the second wafer to the first wafer, further comprising a step of forming a plurality of grooves in a region to be the plurality of support substrates on a surface of the second wafer to be fixed to the first wafer. Including,
A method for manufacturing a semiconductor device according to claim 11. Further comprising preparing a package having a cavity therein;
The method further includes a step of fixing the support substrate to the package in the cavity after the step of dividing each semiconductor element body into individual pieces.
The method for manufacturing a semiconductor device according to claim 11. Preparing a first wafer including a plurality of semiconductor element bodies and a second wafer including a plurality of portions to be support substrates of the semiconductor element bodies;
Forming a recess in a region corresponding to each semiconductor element body in the second wafer;
Bonding the surface of the second wafer opposite to the surface on which the concave portion is formed to the first wafer;
Separating each semiconductor element body;
A method for manufacturing a semiconductor device, comprising: The semiconductor element body includes a fixed portion having an opening, a weight portion that is displaceable with respect to the fixed portion, one end connected to the weight portion, and the other end connected to the fixed portion. A flexible beam portion, and
17. The method of manufacturing a semiconductor device according to claim 16, wherein in the step of forming the recess, the recess is formed in a region corresponding to a portion where the beam portion is connected to the fixed portion.   Before the step of bonding the second wafer to the first wafer, the method further includes a step of forming a plurality of protrusions in a region other than the concave portion on the surface of the second wafer to be fixed to the first wafer. A method for manufacturing a semiconductor device according to claim 16, wherein:   Before the step of bonding the second wafer to the first wafer, the method further includes a step of forming a plurality of groove portions in a region other than the concave portion on the surface of the second wafer to be fixed to the first wafer. 18. The method of manufacturing a semiconductor device according to claim 16, wherein the method is a semiconductor device manufacturing method. Further comprising preparing a package having a cavity therein;
The method further includes a step of fixing the support substrate to the package in the cavity after the step of dividing each semiconductor element body into individual pieces.
20. A method for manufacturing a semiconductor device according to claim 16.

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