JP2007120986A - Temperature testing device of piezoelectric oscillation device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent excessive standby time or excessive measuring time, i.e. to reduce process unit time in the test process for a piezoelectric oscillation device. <P>SOLUTION: The temperature testing device 1 is an inline temperature testing device for testing the performance of the crystal oscillator CR while transferring the crystal oscillator CR along the X direction in one temperature bath 11. In the temperature testing device 1, the standby part 4 for temporally standing by the carrier C mounted with the crystal oscillator CR, and the measurement part 5 for measuring the oscillation frequency of the crystal oscillator CR at every temperature accompanied by the temperature change of the crystal oscillator CR are arranged along the X direction. The stand by part 4 and the measurement part 5 are provided in the one temperature bath 11. In the temperature bath 11 a first temperature region to a third temperature region of three temperature regions 12 to 14 are constituted along the X direction, each first temperature region to third temperature region 12-14 is provided with each of a first measurement part 51 to a third measurement part 53 of different set temperature. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a temperature test apparatus for a piezoelectric vibration device.

  Currently, examples of the piezoelectric vibration device include a crystal resonator. In this type of piezoelectric vibration device, the casing is formed of a substantially rectangular parallelepiped package. This package includes a ceramic base and a metal cap, and the inside of the package is hermetically sealed. Further, inside the package, the crystal vibrating piece is bonded to the electrode pad on the base via a conductive adhesive. (For example, refer to Patent Document 1).

  Incidentally, a temperature test process is one of the manufacturing processes of a piezoelectric vibration device such as a crystal resonator described in Patent Document 1 described below. This temperature test process is a process for measuring the temperature characteristics of the piezoelectric vibration device, and whether the piezoelectric vibration device is good or not depends on the characteristics of the piezoelectric vibration device under an arbitrarily set temperature, for example, whether the oscillation frequency is an appropriate value. It is a step of determining.

  The temperature test process of the conventional piezoelectric vibration device is performed by the temperature test apparatus 9 provided with the ring-shaped temperature tank 91 as shown in FIG.

  In the temperature test apparatus 9 shown in FIG. 14, a ring-shaped mounting portion 92 for mounting a plurality of piezoelectric vibration devices D is provided in a ring-shaped temperature chamber 91, and the piezoelectric vibration device D is disposed on the inner periphery of the temperature chamber 91. A measuring unit 93 that measures the oscillation frequency is provided.

In the temperature test apparatus 9 shown in FIG. 14, a plurality of piezoelectric vibration devices D are placed on the mounting portion 92, and the inside of the temperature chamber 91 is set to a preset temperature. When the inside of the temperature chamber 91 reaches the set temperature, the oscillation frequency of the piezoelectric vibration device D (piezoelectric vibration device D1 in FIG. 14) closest to the measurement unit 93 is rotated while the mounting unit is rotated counterclockwise as indicated by the arrow in FIG. Measurement is performed by the measuring unit 93. In this measurement method, the oscillation frequency of the piezoelectric vibration device D is measured individually one by one. In addition, in the conventional temperature test apparatus 9 as shown in FIG. 14, the temperature which can be set with the temperature tank 91 is one. Therefore, the temperature test apparatus 9 includes a plurality of temperature vessels 91.
JP 2002-158558 A

  In the ring-shaped temperature test apparatus 9 shown in FIG. 14, as described above, since one temperature chamber 91 is maintained at a set temperature, all the piezoelectric vibrating devices mounted on the mounting portion 92 of the temperature chamber 91 are used. Until the measurement of the oscillation frequency of D is finished, the measured piezoelectric vibration device D must be put on standby.

  Further, only one temperature range can be always tested for one temperature chamber 91, and the test of the other temperature range must be performed by transferring the piezoelectric vibration device D to the other temperature chamber 91. .

  As described above, in the conventional temperature test apparatus 9, extra standby time and measurement time (such as transfer time of the piezoelectric vibration device D between the plurality of temperature vessels 91) are required for each piezoelectric vibration device D.

  Therefore, in order to solve the above-described problem, the present invention prevents an extra standby time and measurement time from being taken when measuring the temperature characteristics in the test process of the piezoelectric vibrating device, that is, suppresses the manufacturing tact time. An object of the present invention is to provide a temperature test apparatus for a piezoelectric vibration device.

  In order to achieve the above object, the piezoelectric vibration device temperature test apparatus according to the present invention is provided with a measurement unit for measuring characteristics at each temperature accompanying a temperature change of the piezoelectric vibration device, and the characteristics measured by the measurement unit. In-line method for measuring the characteristics of a piezoelectric vibrating device while conveying the piezoelectric vibrating device in one direction in one temperature bath in a temperature testing apparatus for a piezoelectric vibrating device that tests the quality of a plurality of piezoelectric vibrating devices based on In the temperature bath, a plurality of temperature regions are configured along the conveyance direction of the piezoelectric vibration device, and the plurality of temperature regions are provided with the measurement units corresponding to the temperature regions, respectively. The plurality of measurement units measure the characteristics of the piezoelectric vibration device under different preset temperatures.

  According to the present invention, there is an in-line type temperature test apparatus that measures the characteristics of a piezoelectric vibration device while conveying the piezoelectric vibration device in one direction in one temperature tank, and the piezoelectric vibration device is included in the temperature tank. A plurality of temperature regions are configured along the transport direction, and each of the plurality of temperature regions is provided with the corresponding measurement unit, and each of the plurality of measurement units is under a preset temperature that is different from each other. Since the characteristics of the piezoelectric vibration device are measured, it is possible to prevent an extra standby time and measurement time from being required when measuring the temperature characteristics in the test process of the piezoelectric vibration device. That is, it is possible to reduce the tact time when testing the quality of the plurality of piezoelectric vibrating devices. Further, in comparison with the above-described conventional technique (ring type temperature test apparatus), according to the present invention, it is possible to reduce the waiting time of the piezoelectric vibration device whose characteristics are measured by the temperature test apparatus. That is, according to the present invention, since the in-line method is adopted, after measuring a piezoelectric vibration device under a certain set temperature, the measured piezoelectric vibration device can shift the characteristic under the next set temperature to measurement. It becomes possible. Therefore, it is possible to shorten or eliminate the time for waiting for the measurement of the characteristics of the other piezoelectric vibration devices under the same set temperature.

  In the above configuration, a shutter may be interposed between the plurality of measurement units.

  In this case, since the shutter is interposed between the plurality of measurement units, a temperature change in the measurement unit can be suppressed, and the temperature of the measurement unit can be held as a set temperature. Become.

  In the above configuration, dry air or inert gas may be injected in the temperature region.

  In this case, since dry air or inert gas is injected in the temperature region, the temperature region can be kept airtight, and the temperature in the temperature region can be kept constant. In addition, since dry air is injected, it is possible to suppress the occurrence of condensation when the temperature in the temperature region is low. Note that dry air is superior to inert gas in terms of cost reduction.

  In the above configuration, the temperature region includes a plurality of temperature chambers arranged along a conveyance direction of the piezoelectric vibration device, and the measurement unit is provided in any one of the plurality of temperature chambers, and the plurality of temperatures Among the chambers, the temperature chamber in which the measurement unit is provided and at least one other temperature chamber are set to different temperatures, and the temperature chamber in which the measurement unit is provided is along the transport direction of the piezoelectric vibration device. The temperature of another temperature chamber serving as the front chamber may be a temperature set so as to overshoot the temperature of the temperature chamber in which the measurement unit is provided.

  In this case, in the temperature region, a plurality of temperature chambers are arranged along the conveyance direction of the piezoelectric vibration device, and the measurement unit is provided in any one of the plurality of temperature chambers, and the plurality of temperature chambers The temperature chamber in which the measurement unit is provided and at least one other temperature chamber are set at different temperatures, and the temperature chamber in which the measurement unit is provided is moved in front of the piezoelectric vibrating device in the transport direction. Since the temperature of the other temperature chamber that becomes the chamber is a temperature set so as to overshoot the temperature of the temperature chamber in which the measurement unit is provided, before the measurement of the piezoelectric vibration device in the measurement unit The temperature of the piezoelectric vibration device is overshooted with respect to the temperature of the temperature chamber in which the measurement unit is provided, and the temperature of the piezoelectric vibration device is fluctuated in a short time to reach the set temperature of the measurement unit. temperature It is possible to shorten the Komu combined time to become. In particular, this configuration is suitable when the set temperatures of the plurality of temperature regions shift from a high temperature to a low temperature or from a low temperature to a high temperature along the conveyance direction of the piezoelectric vibration device. Note that the term “overshoot” as used herein means that when the temperature of the piezoelectric vibration device before measurement of the characteristics in the measurement unit is matched with the set temperature in the measurement unit, the temperature setting is not set as the set temperature. Seen from the temperature of the piezoelectric vibration device before the measurement of the characteristics in the measurement unit, set the temperature of the other temperature chamber that becomes the front chamber of the measurement unit to a temperature that exceeds the set temperature, and rapidly increase the temperature of the piezoelectric vibration device It means to fluctuate. For example, when the temperature of the piezoelectric vibration device is ± 0 ° C. and the set temperature in the measurement unit is + 40 ° C., the temperature of the other temperature chamber that is the front chamber of the measurement unit is set to + 60 ° C. . Further, when the temperature of the piezoelectric vibration device is 70 ° C. and the set temperature in the measurement unit is + 40 ° C., it indicates that the temperature of the other temperature chamber that is the front chamber of the measurement unit is set to + 20 ° C.

  In the above-described configuration, a non-defective piezoelectric vibration device that is the same device as the piezoelectric vibration device that performs a temperature test may be used as a reference work that serves as a reference for characteristics at each temperature accompanying a temperature change.

  In this case, as the reference work, a non-defective piezoelectric vibration device that is the same device as the piezoelectric vibration device that performs the temperature test is used, so the measurement of the reference work is performed in each measurement unit, and the temperature setting in each measurement unit is performed. Can be stabilized.

  In the above-described configuration, the piezoelectric vibrating piece is mounted inside the piezoelectric vibrating device, and the piezoelectric vibrating piece mounted inside the piezoelectric vibrating device for performing a temperature test as a reference work serving as a reference for characteristics at each temperature accompanying a temperature change. A good piezoelectric vibration device in which a thicker piezoelectric vibrating piece is mounted may be used.

  In this case, as the reference work, a piezoelectric vibrating device in which a piezoelectric vibrating piece having a thickness larger than that of the piezoelectric vibrating piece mounted in the temperature test is used is used. When the temperature of the piezoelectric vibrating piece is equal to the set temperature, the temperature of the piezoelectric vibrating device that performs the temperature test is the set temperature (specifically, the temperature of the piezoelectric vibrating piece). Therefore, it becomes possible to stabilize the temperature setting in each measurement unit by measuring the reference work in each measurement unit. Furthermore, even when the reference work is warped when the reference work is pressed by the probe pin described below in order to measure the characteristics of the reference work, the piezoelectric vibrating reed mounted therein is thick. If the piezoelectric vibrating piece is used, the piezoelectric vibrating piece is less likely to warp. Therefore, it is possible to suppress deterioration in characteristics such as oscillation frequency fluctuation due to warpage of the piezoelectric vibrating piece. Therefore, this configuration is preferable for measuring characteristics such as the oscillation frequency of the reference work.

  In the configuration, the measurement unit measures the characteristic of the reference work, calculates an error of the substantial temperature with respect to the set temperature in the temperature region from the measured characteristic of the reference work, and from this error, the piezoelectric vibration device at the substantial temperature is calculated. A controller that corrects the characteristics to the characteristics of the piezoelectric vibrating device at the set temperature may be provided.

  In this case, the measurement unit measures the characteristics of the reference work, calculates an actual temperature error with respect to the set temperature in the temperature region from the measured reference work characteristics, and from this error, the characteristics of the piezoelectric vibration device at the actual temperature. Is provided to correct the characteristics of the piezoelectric vibration device at the set temperature, so that it is possible to stabilize the measurement of the characteristics of the piezoelectric vibration device in each of the measurement sections. That is, even if the actual temperature differs from the set temperature in the temperature region, the temperature of the piezoelectric vibrating device is corrected to an appropriate characteristic based on the temperature difference, and the temperature is virtually modulated. Is possible.

  In the above-described configuration, an in-line type temperature test in which a plurality of piezoelectric vibration devices are mounted on one carrier in one temperature chamber, and the characteristics of the piezoelectric vibration devices are measured while sequentially conveying the plurality of carriers in one direction. When measuring the characteristics of the piezoelectric vibrating device in the measurement unit, a warp prevention pin that suppresses warping of the carrier may be provided.

  In this case, since at least one or more warp prevention pins are provided along the carrier conveyance direction, it is possible to suppress thermal deformation of the carrier due to a temperature change in each measurement unit. Further, by suppressing the thermal deformation of the carrier, it becomes easy to measure the characteristics of the piezoelectric vibration device mounted on the carrier (for example, a contact such as a probe pin described below is ensured).

  The said structure WHEREIN: The identification part which identifies these piezoelectric vibration devices may be provided.

  In this case, since the identification unit for identifying the plurality of piezoelectric vibration devices is provided, it is possible to accurately perform pass / fail selection of the plurality of piezoelectric vibration devices by the identification unit.

  The said structure WHEREIN: The said identification part may be distribute | arranged to the front-back position of the said measurement part along the conveyance direction of a piezoelectric vibration device.

  In this case, it is an in-line type temperature test apparatus that measures the characteristics of the piezoelectric vibration device while conveying the piezoelectric vibration device in one direction in the one temperature chamber, and the identification unit that identifies the plurality of piezoelectric vibration devices Since the identification unit is arranged at the front and rear positions of the measurement unit along the transport direction of the piezoelectric vibration device, the identification defect of the plurality of piezoelectric vibration devices to be measured is suppressed and tested at the same time. It is possible to suppress mistakes in determining whether the plurality of piezoelectric vibrating devices are acceptable. That is, it is possible to specify the piezoelectric vibration device with the identification unit disposed at the front position of the measurement unit, and further, the temperature of the piezoelectric vibration device can be identified with the identification unit disposed at the rear position of the measurement unit. It is possible to check the piezoelectric vibration devices that are selected as good or bad by measuring the characteristics at each temperature according to the change, and the discrimination unit that performs the identification twice can accurately select the quality of the plurality of piezoelectric vibration devices. Can be performed.

  In the above-described configuration, an in-line type temperature test in which a plurality of piezoelectric vibration devices are mounted on one carrier in one temperature chamber, and the characteristics of the piezoelectric vibration devices are measured while sequentially conveying the plurality of carriers in one direction. The identification unit may identify each of the plurality of carriers and the plurality of piezoelectric vibration devices mounted on the carrier.

  In this case, an in-line type temperature test apparatus in which a plurality of piezoelectric vibration devices are mounted on one carrier in one temperature bath, and the characteristics of the piezoelectric vibration devices are measured while the carriers are sequentially conveyed in one direction. Since the identification unit identifies the plurality of carriers and the plurality of piezoelectric vibration devices mounted on the carrier, respectively, the identification performed before measuring the characteristics at each temperature accompanying the temperature change of the piezoelectric vibration device In addition, the carrier can be specified, the arrangement of the piezoelectric vibration device mounted on the carrier on the carrier can be specified, and the characteristics at each temperature according to the temperature change of the piezoelectric vibration device were measured. In the identification section to be performed later, the characteristics at each temperature along with the temperature change of the piezoelectric vibration device are measured. It is possible to perform the confirmation of the piezoelectric vibrating device to be sorted to whether, it is possible to further accurately perform inspection of the manufactured plurality of piezoelectric vibration devices by the identification unit for performing the identifying twice.

  In the above configuration, a barcode may be attached to the carrier, and identification of the carrier and the piezoelectric vibration device mounted on the carrier in the identification unit may be performed by identification of the barcode attached to the carrier.

  In this case, a barcode is attached to the carrier, and the identification unit identifies the carrier and the piezoelectric vibration device mounted on the carrier by identifying the barcode attached to the carrier. Identification can be facilitated.

  In the above-described configuration, a non-defective piezoelectric vibration device and a defective piezoelectric device are disposed behind the piezoelectric vibration device of the identification unit disposed at a rear position for measuring characteristics at each temperature accompanying a temperature change of the piezoelectric vibration device. A sorting unit for sorting the vibration device is provided. The sorting unit includes a defective product transport unit that transports a defective piezoelectric vibration device to a defective product storage unit, and a non-defective product that transports a non-defective piezoelectric vibration device to a good product storage unit. A conveyance part may be distribute | arranged in order along the said conveyance direction of a piezoelectric vibration device.

  In this case, a non-defective piezoelectric vibration device and a non-defective piezoelectric vibration are located behind the piezoelectric vibration device of the identification unit arranged at the rear position for measuring the characteristics at each temperature accompanying the temperature change of the piezoelectric vibration device. The sorting unit for sorting devices is provided, and the sorting unit transports a defective product vibration unit to a defective product storage unit and a non-defective piezoelectric vibration device to the good product storage unit. Since the non-defective product conveyance unit is sequentially arranged along the conveyance direction of the piezoelectric vibration device, it is possible to prevent the defective piezoelectric vibration device from being conveyed to the non-defective product conveyance unit. Therefore, according to the present invention, it is possible to prevent a defective piezoelectric vibration device from being mistakenly conveyed to the non-defective product storage unit.

  The said structure WHEREIN: A pair of probe pin which measures the characteristic of a piezoelectric vibration device, and the adhesion prevention means which prevents adhesion | attachment to the piezoelectric vibration device of a pair of said probe pin may be provided in the said measurement part.

  In this case, the measurement unit is provided with the pair of probe pins for measuring the characteristics of the piezoelectric vibration device and the adhesion preventing means for preventing the pair of probe pins from adhering to the piezoelectric vibration device. It is possible to prevent the pair of probe pins from adhering to the piezoelectric vibrating device and not being separated after the measurement of the characteristics of the piezoelectric vibrating device using the pair of probe pins.

  The said structure WHEREIN: The said adhesion prevention means may consist of an insulating member.

  In this case, since the adhesion preventing means is made of an insulating member, it is possible to suppress a short circuit between the terminal electrodes of the piezoelectric vibrating device due to adhesion of the adhesion preventing means to the piezoelectric vibrating device.

  In the above configuration, the pair of probe pins and the adhesion preventing means have different stroke amounts, and the adhesion preventing means has a piezoelectric vibration device prior to the pair of probe pins when measuring characteristics of the piezoelectric vibration device. And after the measurement of the characteristics of the piezoelectric vibration device is completed, the piezoelectric vibration device may be separated from the piezoelectric vibration device after the pair of probe pins.

  In this case, the pair of probe pins and the adhesion preventing means have different stroke amounts, and the adhesion preventing means has the piezoelectric vibration device prior to the pair of probe pins when measuring the characteristics of the piezoelectric vibration device. After the measurement of the characteristics of the piezoelectric vibration device is completed, the pair of probe pins is separated from the piezoelectric vibration device after the pair of probe pins. It is possible to prevent the device from holding an adhesive state.

  In the above configuration, a plurality of the pair of probe pins may be provided, and the plurality of the pair of probe pins may be separated from each other.

  In this case, a plurality of the pair of probe pins are provided, and since the plurality of the pair of probe pins are arranged apart from each other, in each control circuit connected to the plurality of the pair of probe pins, It is possible to avoid interference.

  The said structure WHEREIN: A variable capacitor may be connected to the said adhesion prevention means.

  In this case, since a variable capacitance capacitor is connected to the adhesion preventing means, it is possible to automatically adjust the capacitance, which is preferable for automation of the temperature test apparatus.

  According to the present invention, it is possible to prevent an extra standby time and measurement time from being taken when measuring the temperature characteristics in the test process of the piezoelectric vibration device, that is, to reduce the manufacturing tact time.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a crystal resonator temperature test apparatus when the present invention is applied to a crystal resonator as a piezoelectric vibration device will be described.

  The temperature test apparatus 1 for the crystal resonator CR (see the figure) according to the present example is provided with various temperatures (in this example, three locations of −30 ° C., + 25 ° C., and + 80 ° C. according to the temperature change of the crystal resonator; The characteristic (oscillation frequency) in the reference) is measured, the quality of the crystal resonator CR is determined based on the measured characteristic result, and the quality of the crystal resonator CR is selected. In the present embodiment, a crystal resonator CR (see FIG. 8) is used as a piezoelectric vibration device to be tested in the temperature test apparatus 1. The quartz crystal resonator CR includes a quartz crystal vibrating piece (not shown) mounted inside, a base that holds the quartz crystal vibrating piece, and a cap that hermetically seals the quartz crystal vibrating piece held on the base. The crystal resonator CR is formed with terminal electrodes CR1 and CR2 for connection to external electrodes. The terminal electrodes CR1 and CR2 are made of different electrodes.

  As shown in FIG. 1, the temperature test apparatus 1 is an in-line method for measuring the characteristics of the crystal resonator CR while conveying the crystal resonator CR in one direction (X direction shown in FIG. 1) in one temperature chamber 11. This is a temperature test apparatus. Specifically, in the temperature test apparatus 1, as shown in FIG. 1, a plurality of crystal resonators CR are mounted on one carrier C, and the carriers C on which the plurality of crystal resonators CR are mounted are arranged in a plurality of X directions. This is an in-line type temperature test apparatus that measures the characteristics of the crystal resonator CR while being conveyed in sequence.

  The carrier C here is composed of a plate formed in a rectangular parallelepiped as shown in FIG. 1, and this carrier C is arranged as described below with the long side in plan view of the carrier C facing in the Y direction shown in FIG. 2 and conveyed along the short side direction (X direction) of the carrier C in plan view. A total of 28 openings C1 ((X direction, Y direction) = (2, 14)) are formed in the carrier C, and a maximum of 26 crystal resonators to be inspected are formed in the openings C1. A CR and two reference works R serving as test standards are mounted. The carrier C is preferably as small as possible in consideration of temperature variation. In this embodiment, the size of the carrier C is set to 120 × 10 mm or less, and temperature variation is eliminated as a material. Aluminum is used for this purpose. The dimensions and materials of the carrier C described above are preferable for preventing the carrier from being warped. Further, a bar code C2 is attached to the carrier C, and the carrier C is identified by the identification unit 3 described below by identifying the bar code C2. Further, as shown in FIG. 1, both short sides of the carrier C are provided with V-shaped depressions C <b> 3 in plan view, and the depressions C <b> 3 are bitten with a conveyance gear 16 of the temperature test apparatus 1 described below. The carrier C is transported along the transport direction (X direction) (see below). Further, the carrier C is formed with a positioning hole C4 at the time of measurement in the measurement unit 5 described below. In the present embodiment, the crystal resonator CR is not mounted in the opening C1 located far from the barcode C2 of the carrier C shown in FIG. Further, in this embodiment, the reference work R is the same as the crystal resonator CR to be inspected (hereinafter referred to as the crystal resonator CR to be inspected in this case) to be subjected to the temperature test, and is determined to be a non-defective product. A crystal resonator CR is used, and this reference work R is arranged and fitted in the opening C1.

  Next, as shown in FIG. 1, the temperature test apparatus 1 includes an arrangement unit 2 that arranges the carrier C, an identification unit 3 that identifies the carrier C and the crystal unit CR mounted on the carrier C, and a crystal unit. A standby unit 4 for primary standby of the carrier C on which the CR is mounted, a measuring unit 5 for measuring the oscillation frequency of the crystal resonator CR at each temperature according to a temperature change of the crystal resonator CR, and the temperature test apparatus for the carrier C 1 and a sorting unit 6 that judges whether the crystal resonator CR mounted on the carrier C is good or bad and sorts the non-defective and defective crystal resonator CR along the carrier C transport direction (X direction). Is provided.

  The standby unit 4 and the measurement unit 5 are provided in one temperature tank 11. As shown in FIG. 1, three first to third temperature regions 12 to 14 are configured in the temperature chamber 11 along the transport direction (X direction) of the carrier C on which the crystal resonator CR is mounted. . Specifically, referring to each member described below, in the first temperature region 12, a first standby unit 41 and a first measurement unit 51, which are two temperature chambers, are sequentially arranged along the transport direction (X direction). ing. Further, in the second temperature region 13, a second standby section 42 and a second measurement section 52, which are two temperature chambers, are sequentially arranged along the transport direction (X direction). In the third temperature region 14, a third standby section 43, a third measurement section 53, and a fourth standby section 44, which are three temperature chambers, are sequentially arranged along the transport direction (X direction). In the present embodiment, the temperature of the first temperature region 12 is set to −30 ° C., the temperature of the second temperature region 13 is set to + 25 ° C., and the temperature of the third temperature region 14 is set to + 80 ° C. In this embodiment, for convenience, the temperature of the first temperature region 12 is a low temperature region, the temperature of the second temperature region 13 is a medium temperature region, and the temperature of the third temperature region 14 is a high temperature region.

  Further, a dry air generator 71 for injecting dry air into the temperature tank 11 is connected to the temperature tank 11 described above. Specifically, dry air is injected into the measurement unit 5 and the standby unit 4 from the dry air generator 71. In addition, a cooling device 72 for cooling the inside of the first measurement unit 51 is connected to the first measurement unit 51 described below.

  Next, each member of the above-described temperature test apparatus 1 will be described with reference to the drawings.

  As shown in FIG. 2, the placement unit 2 is a member that supplies the crystal resonator CR and the mounted carrier C to the temperature test apparatus 1. The carrier C is supplied to the placement unit 2 manually by a worker. As shown in FIG. 2, the carrier C supplied to the placement unit 2 is transported along the X direction by the transport gear 16 described below.

  As shown in FIGS. 1 and 3, the identification unit 3 includes a first identification unit 31 and a second identification unit 32, and a measurement unit 5 (specifically, along the conveyance direction (X direction) of the crystal resonator CR). Are arranged in front and rear positions of a first measurement unit 51 and a third measurement unit 53) described below. The first identification unit 31 is a member that identifies the plurality of carriers C supplied to the temperature test apparatus 1 and the plurality of crystal resonators CR mounted on the carriers C, and identifies the carrier C and the crystal resonator CR. Is performed by recognizing the barcode C2 attached to the carrier C. The second identification unit 32 is a member that identifies whether the carrier C and the crystal resonator CR mounted on the carrier C are the same as those identified by the first identification unit 31, and the carrier C and the crystal resonator CR. Is identified by identifying the barcode C2 attached to the carrier C.

  As shown in FIGS. 1 and 3, the first identification unit 31 is provided with an identification sensor 33 above the conveyance direction (X direction) of the carrier C. A bar code recognition unit 34 is provided below the identification sensor 33. When the carrier C is conveyed along the conveyance direction (X direction) to the lower side of the identification sensor 33, the identification unit 31 is moved downward in the Z direction. The barcode recognition unit 34 provided in the identification sensor 33 reads the barcode C2 attached to the carrier C, recognizes the carrier C, and identifies it from other carriers C. The reading of the crystal resonator CR mounted on the carrier C also reads information on each opening C1 when reading the information on the carrier C using the barcode C2, and the crystal resonator CR mounted on each opening C1. This is performed by virtually determining the opening C1 as the crystal resonator CR based on the information of the opening C1. The second identification unit 32 has the same basic configuration as the first identification unit 31. Therefore, the description of the second identification unit 32 is omitted.

  As shown in FIG. 1, the standby unit 4 includes a first standby unit 41, a second standby unit 42, a third standby unit 43, and a fourth standby unit 44. The first standby unit 41 blows dry air onto the surface of the carrier C to remove water adhering to the surface of the carrier C. The second standby unit 42 warms the crystal unit CR prior to measurement by the second measurement unit 52 described below. The third standby unit 43 warms the crystal resonator CR prior to measurement by the third measurement unit 53 described below. The fourth standby unit 44 returns the temperature of the crystal resonator CR, which has become high in the measurement by the third measurement unit 53 described below, to room temperature.

  As shown in FIGS. 1 and 4, the first standby unit 41 is provided with a dry air injecting unit 45 above the transport direction (X direction) of the carrier C, and the transport direction (X direction) of the dry air injecting unit 45. Front and rear shutters 461 and 462 are provided. Also, below the dry air injection part 45, there is a pressing part 47 for preventing the quartz crystal CR mounted on the carrier C from scattering due to the dry air injection to the carrier C by the dry air injection part 45. Is provided. The set temperature of the first standby unit 41 is set to an arbitrarily low temperature. When the carrier C is conveyed from the first identification unit 31 to the first standby unit 41, the shutter 461 is opened in the Z upward direction, and the carrier C is conveyed to the first standby unit 41, and the carrier C is transferred to the first standby unit 41. The shutter 461 closes in the Z downward direction. Then, the crystal unit CR mounted on the carrier C is pressed by the pressing unit 47 so as to be fixed. Thereafter, dry air is injected into the carrier C by the dry air injection unit 45 to remove moisture from the surface of the carrier C, and the carrier C enters a measurement standby state at the first measurement unit 51 described below. When the measurement by the first measurement unit 51 becomes possible after removing the moisture on the surface of the carrier C, the pressing of the crystal unit CR by the pressing unit 47 is released, and the shutter 462 is opened in the Z upward direction. The carrier C is transported from the first standby unit 41 to the first measurement unit 51. Then, when the carrier C is conveyed to the first measurement unit 51, the shutter 462 is closed in the Z downward direction. In this embodiment, as shown in FIG. 4, the first standby unit 41 is provided with a temperature unit 48 including a temperature adjustment element and a temperature sensor below the carrier C conveyance direction (X direction). It is also possible to adjust the temperature of the first standby unit 41 by any setting.

  As shown in FIGS. 1 and 5, the second standby unit 42 is provided with a temperature unit 48 including a temperature adjustment element and a temperature sensor below the carrier C conveyance direction (X direction). Shutters 461 and 462 are provided in the front and rear of the temperature section 48 in the transport direction (X direction), and are provided below the shutters 461 and 462 and on the transport path of the carrier C to equalize the heat generation distribution of the carrier C. A heat plate 49 is laid. The second standby unit 42 is in a dry air atmosphere by the dry air injected from the dry air injection unit 45, and the temperature is set to + 25 ° C. When the carrier C is conveyed from the first measuring unit 51 to the second standby unit 42, the shutter 461 is opened in the Z upward direction, and the carrier C is conveyed to the second standby unit 42. When the carrier C is transported to the second standby unit 42, the shutter 462 closes in the Z downward direction, and the carrier C enters a measurement standby state at the second measurement unit 52 described below. When measurement by the second measurement unit 52 becomes possible, the shutter 461 opens in the Z upward direction, and the carrier C is conveyed from the second standby unit 42 to the second measurement unit 52. When the carrier C is transported to the second measuring unit 52, the shutter 462 is closed in the Z downward direction.

  The third and fourth standby units 43 and 44 differ from the above-described second standby unit 42 only in the set temperature, and have the same basic configuration. Therefore, the description of the third and fourth standby units 43 and 44 is omitted. The set temperature of the third standby unit 43 is + 80 ° C., and the set temperature of the fourth standby unit 44 is + 80 ° C. In the first to fourth standby parts 41 to 44, at least one member of a Peltier element and a heater is used as the temperature adjustment element.

  As shown in FIG. 1, the measurement unit 5 includes a first measurement unit 51, a second measurement unit 52, and a third measurement unit 53. The first measurement unit 51 sets the set temperature to a low temperature of −30 ° C. and measures the oscillation frequency of the crystal resonator CR at −30 ° C. The second measuring unit 52 sets the set temperature to a low temperature of + 25 ° C. and measures the oscillation frequency of the crystal resonator CR at + 25 ° C. The third measuring unit 53 sets the set temperature to a low temperature of + 80 ° C. and measures the oscillation frequency of the crystal resonator CR at + 80 ° C.

  As shown in FIGS. 1 and 6, the first measurement unit 51 is provided with an inspection unit 54 above the carrier C conveyance direction (X direction), and a shutter 551 before and after the inspection unit 54 conveyance direction (X direction). , 552 are provided. A temperature unit 56 including a temperature control element and a temperature sensor is provided below the inspection unit 54. Further, a heat equalizing plate 57 for equalizing the heat generation distribution of the carrier C is laid on the carrier C conveyance path of the first measurement unit 51. In addition, this 1st measurement part 51 is a dry air atmosphere, and uses the Peltier device for the temperature control element. When the carrier C is conveyed from the first standby unit 41 to the first measuring unit 51, the shutter 551 opens in the Z upward direction, and the carrier C is conveyed to the first measuring unit 51. When the carrier C is transported to the first measuring unit 51, the shutter 551 is closed in the Z downward direction, and the oscillation frequency of the crystal resonator CR mounted on the carrier C is measured by the inspection unit 54. When the measurement of the oscillation frequency by the inspection unit 54 is completed, the shutter 552 opens in the Z upward direction, and the carrier C is conveyed from the first measurement unit 51 to the second standby unit 42. When the carrier C is conveyed to the second standby unit 42, the shutter 552 is closed in the Z downward direction.

  The second and third measuring units 52 and 53 are different from the first measuring unit 51 described above only in the set temperature, and have the same basic configuration. Therefore, the description of the configuration of the third and fourth standby units 43 and 44 is omitted. In the second and third measuring units 52 and 53, a heater is used as the temperature control element.

  Next, a specific configuration of the inspection unit 54 of the first measurement unit 51 described above will be described.

  As shown in FIG. 7, the inspection unit 54 measures the oscillating frequency of the positioning pin 541 that engages with the positioning hole C4 of the carrier C and the crystal resonator CR in order to position the carrier C on the transport path. For this purpose, a control unit in which two heads 542 for connecting to the terminal electrodes CR1 and CR2 of the crystal resonator CR, a test circuit composed of a varicap and variable circuit as a variable capacitor, and a net analyzer are connected by a coaxial cable. 545. Each head 542 is provided with a pair of probe pins 543. The distance between the heads 542 is a distance between a plurality of openings C1 as shown in FIG. 8, taking the opening C1 of the carrier C as an example, and between the openings C1 with five openings C1 in between. Corresponds to distance. That is, the two heads 542 are spaced apart. Further, as shown in FIG. 8, between the pair of probe pins 543 of each head 542, a piano wire 544 for preventing the pair of probe pins 543 from adhering to the crystal resonator CR (the adhesion prevention in the present invention). Means). The piano wire 544 and the pair of probe pins 543 are different in stroke amount in the Z direction. In this embodiment, the piano wire 544 is set to have a longer stroke than the pair of probe pins 543 (see FIG. 9). A straight line attached to the center of the crystal resonator CR and the reference work R shown in FIG. 8 indicates a contact point with the piano wire 544.

  Next, taking the first measurement unit 51 as an example, measurement of the oscillation frequency of the crystal resonator CR by the inspection unit 54 will be described.

  When the carrier C is transported to the first measurement unit 51, the positioning pin 541 descends in the Z downward direction, engages with the positioning hole C4 of the carrier C, and positions the carrier C in the first measurement unit 51. After positioning the carrier C, the head 542 moves from the fixed position to the upper side of the carrier C (moves in the X direction). The head 542 moved above the carrier C is lowered in the Z downward direction by a mechanism using an air cylinder (see FIGS. 7 and 9). In the pair of probe pins 543 and the piano wire 544 of the head 542 lowered in the Z downward direction as shown in FIG. 9A, the piano wire 544 has a longer stroke, so the piano as shown in FIG. 9B. The lower end of the line 544 is first in contact with the crystal resonator CR, and then a pair of probe pins 543 are connected to the terminal electrodes CR1 and CR2 of the crystal resonator CR, and the crystal unit CR and the reference work R are connected by the inspection unit 54. Is measured (see FIG. 9C). When the measurement of the oscillation frequency of the crystal resonator CR and the reference work R by the inspection unit 54 is finished, the head 542 is moved upward in the Z direction (a pair of probe pins 543 and a piano shown in FIGS. 9C and 9D). (See line 544). At this time, since the stroke of the piano wire 544 is longer, only the pair of probe pins 543 first rises in the Z direction as shown in FIG. After that, the piano wire 544 is also raised in the Z upward direction (see FIG. 9E), and when the head 542 finishes raising in the Z upward direction, the crystal wire CR to be inspected next is above. Then, the head 542 moves in the X direction, and the oscillation frequency of the other crystal resonator CR is measured by the same operation as described above. When the measurement of the oscillation frequencies of all the crystal resonators CR and the reference work R mounted on the carrier C is completed, the position returns to the initial fixed position. Thereafter, the carrier C that has finished measuring the oscillation frequency of the crystal resonator CR by the inspection unit 54 is conveyed to the second standby unit 42 that is the next process. Note that the series of measurement operations performed by the inspection unit 54 is similarly performed in the second measurement unit 52 and the third measurement unit 53.

  In the measurement by the inspection unit 54 described above, first, the oscillation frequency of the reference work R and the crystal resonator CR to be inspected to be tested is measured. Then, from the value of the oscillation frequency of the reference work R, the control unit 545 calculates an error of the substantial temperature with respect to the set temperature of the first measurement unit 51. Based on the calculated error, the value of the oscillation frequency of the crystal resonator CR at the actual temperature is corrected to the value of the oscillation frequency of the crystal resonator CR at the set temperature, and the crystal resonator CR at the set temperature of the inspection target crystal is corrected. Calculate the oscillation frequency. The correction by the reference work R is also applied to the measurement of the oscillation frequency of another crystal resonator CR mounted on the carrier C.

  As shown in FIG. 1, the selection unit 6 is arranged behind the carrier C in the transport direction (X direction) of the second identification unit 32, and as shown in FIG. And a carrier transport unit 61 that transports the carrier C out of the temperature test apparatus 1, a defective product transport unit 62 that transports a crystal resonator CR determined as a defective product among the 24 crystal resonators CR, and 24 A non-defective product transporting unit 63 that transports a crystal resonator CR determined to be a non-defective product among the crystal resonators CR. In the sorting unit 6, a carrier transport unit 61, a defective product transport unit 62, and a non-defective product transport unit 63 are sequentially arranged along the transport direction (X direction) of the carrier C.

  The carrier C transported from the second identification unit 32 has the crystal resonator CR removed from the carrier C in the carrier transport unit 61. The carrier C from which the crystal resonator CR has been removed is carried out of the temperature test apparatus 1 as shown in FIGS. Then, the crystal resonator CR removed from the carrier C is sorted into a defective product transport unit 62 and a non-defective product transport unit 63 based on the quality determination of the second identification unit 32.

  By the way, in the temperature test apparatus 1 according to the above-described embodiment, when measuring the oscillation frequency of the crystal resonator CR in the temperature chamber 11 as shown in FIG. A warpage prevention pin 15 is provided to suppress the warpage. The warp prevention pin 15 operates as shown in FIG. 11 when measuring the oscillation frequency of the crystal resonator CR. Note that the warp prevention pin 15 here is also used to accurately fit the carrier C to the transport gear 16 as shown in FIG. Therefore, the warp prevention pin 15 is provided not only in the first measurement unit 51 but also in other members.

  Further, reference numeral 16 shown in FIG. 11 is a transport gear for transporting the carrier C in the transport direction (X direction), and the carrier C is arranged from the placement unit 2 to the sorting unit 6 along the transport direction (X direction). It is a member to convey. In this embodiment, referring to FIG. 1, the transport gear 16 is used for transporting the carrier C from the placement unit 2 to the first standby unit 41, and from the first measurement unit 51 to the second standby unit 42. What is used for transporting carrier C, what is used for transporting carrier C from second measuring section 52 to third standby section 43, and what is used for transporting carrier C from third measuring section 53 to sorting section 6 It consists of four. Compared with the case where the carrier C is transported by one transport gear 16 from the placement unit 2 to the sorting unit 6, the waiting time can be reduced, and the temperature test can be performed by using a plurality of transport gears 16. For example, the number of measuring units 5 can be easily increased or decreased by changing the number of members of the apparatus 1.

  Next, the conveyance of the carrier C in the present embodiment will be briefly described.

  As shown in FIG. 11A, the carrier C is positioned by the warp prevention pin 15 in the placement portion 2. Then, as shown in FIG. 11 (b), the transport gear 16 is accurately fitted in the recess C3 of the carrier C, and then the warp prevention pin 15 is moved upward in the Z direction so that the warp prevention pin 15 is separated from the carrier C. Let Then, as shown in FIG. 11C, the carrier gear 16 is moved upward in the Z direction, and the carrier gear 16 is driven to carry the carrier C along the carrying direction (X direction). Then, when the carrier C transported by the transport gear 16 is transported to the measuring unit 5 such as the first measuring unit 51, the carrier C is moved below the Z by the warp prevention pin 15 as shown in FIG. Pressed in the direction. Then, while holding the state pressed on the conveyance path by the warp prevention pin 15, the conveyance gear 16 is disengaged from the depression C <b> 3 of the carrier C, and the oscillation frequency of the crystal resonator CR is measured by the first measurement unit 51. It is. When the measurement of the oscillation frequency of the crystal resonator CR in the measurement unit 5 is completed, the steps shown in FIGS. 11A to 11D are repeated in the other standby units 4, the measurement unit 5 and the like to move the carrier C in the transport direction ( (X direction) to the sorting unit 6.

  As described above, in the temperature test apparatus according to the present embodiment, the carrier C and the crystal resonator CR supplied from the placement unit 2 are the first identification unit 31, the first standby unit 41, the first measurement unit 51, the first measurement unit 51, and the first measurement unit 51. 2 through the standby unit 42, the second measurement unit 52, the third standby unit 43, the third measurement unit 53, the fourth standby unit 44, and the second identification unit 32, and is conveyed to the selection unit 6. The carrier C is unloaded from the temperature test apparatus 1 in the carrier transport unit, and the defective product transport unit 62 and the non-defective product transport unit 63 sort the crystal resonator CR into a good product and a defective product.

  As described above, according to the temperature test apparatus 1 for the crystal resonator CR according to the present embodiment, the crystal resonator CR is transported along the transport direction (X direction) in one temperature chamber 11. This is an in-line type temperature test apparatus 1 that measures the oscillation frequency of the CR, and in the temperature chamber 11, there are three first to third temperature regions 12 to 14 along the conveying direction (X direction) of the crystal resonator CR. The first to third temperature regions 12 to 14 are provided with first to third measuring units 51 to 53 corresponding to the first to third temperature regions 12 to 14, respectively. Since the oscillation frequency of the crystal resonator CR below is measured, it is possible to prevent an extra standby time and measurement time from being required when measuring the temperature characteristics in the temperature test process of the crystal resonator CR. That is, the tact time when testing the oscillation frequency of the plurality of crystal resonators CR can be reduced. Compared to the above-described conventional technique (temperature test apparatus 9 shown in FIG. 14), according to the present embodiment, the waiting time of the crystal resonator CR whose oscillation frequency is measured by the temperature test apparatus 1 can be reduced. . That is, since the in-line method is adopted according to the present embodiment, after measuring the crystal resonator CR under a certain set temperature (for example, the set temperature in the first temperature region), the measured crystal resonator CR is The oscillation frequency under the set temperature (for example, the set temperature in the second temperature region) can be shifted to measurement. Therefore, it is possible to shorten or eliminate the time for waiting for the measurement of the oscillation frequency under the same set temperature of the other crystal resonator CR.

  Since the shutters 551 and 552 (specifically, including the shutters 461 and 462) are interposed between the first to third measuring units 51 to 53, the temperature change in the first to third measuring units 51 to 53 is performed. Therefore, the temperature of the first to third measuring units 51 to 53 can be maintained as the set temperature.

  Further, since dry air is injected in the first to third temperature regions 12 to 14, the first to third temperature regions 12 to 14 can be kept airtight, and the temperature in the first to third temperature regions 12 to 14 is maintained. Can be kept constant. Moreover, since dry air is inject | poured, when the temperature in the 1st-3rd temperature range 12-14 is low, it can suppress that dew condensation generate | occur | produces.

  Further, since the non-defective crystal resonator CR is the same device as the crystal resonator CR for performing the temperature test as the reference work R, the reference work R is measured in each of the first to third measuring units 51 to 53. The temperature setting in each of the first to third measuring units 51 to 53 can be stabilized.

  In addition, the measurement unit 5 measures the oscillation frequency of the reference work R, calculates an actual temperature error with respect to the set temperatures of the first to third temperature regions 12 to 14 from the measured oscillation frequency of the reference work R, and calculates the error from this error. Since the control unit 545 for correcting the oscillation frequency of the crystal resonator CR at the actual temperature to the oscillation frequency of the crystal resonator CR at the set temperature is provided, the oscillation of the crystal resonator CR in each of the first to third measurement units 51 to 53 is provided. The frequency measurement can be stabilized. That is, even if the actual temperature differs from the set temperature in the first to third temperature regions 12 to 14, the oscillation frequency of the crystal resonator CR is corrected to an appropriate oscillation frequency based on the temperature difference. The temperature can be virtually modulated.

  Moreover, since the warp prevention pin 15 is provided along the conveyance direction (X direction) of the carrier C, the carrier C is prevented from being thermally deformed due to a temperature change in each of the first to third measurement units 51 to 53. be able to. Further, by suppressing the thermal deformation of the carrier C, the characteristics of the crystal resonator CR mounted on the carrier C can be easily measured (for example, contact between the pair of probe pins 543 and the like is ensured).

  In addition, since the identification unit 3 that identifies the plurality of crystal resonators CR is provided, the identification unit 3 can accurately select the quality of the plurality of crystal resonators CR.

  Further, it is an in-line type temperature test apparatus that measures the oscillation frequency of the crystal resonator CR while transporting the crystal resonator CR along the transport direction (X direction) in one temperature chamber 11, and includes a plurality of crystal resonators. Since the identification unit 3 for identifying the CR is provided, and the identification unit 3 is arranged at the front and rear positions of the measurement unit 5 along the conveyance direction (X direction) of the crystal unit CR, 24 crystal units to be measured It is possible to suppress misidentification of the quality determination of the 24 crystal resonators CR to be tested at the same time by suppressing the CR identification failure. That is, the identification unit (first identification unit 31) arranged at the front position of the measurement unit 5 can specify the crystal resonator CR, and further, the identification unit (first identification unit) arranged at the rear position of the measurement unit 5 2 discriminating unit 32) can confirm the crystal resonator CR selected as good or bad by measuring the oscillation frequency at each temperature accompanying the temperature change of the crystal resonator CR. Thus, according to the present embodiment, it is possible to accurately perform pass / fail screening of the plurality of crystal resonators CR by the identification unit 3 that performs the identification twice.

  In addition, 24 crystal resonators CR are mounted on one carrier C in one temperature chamber 11, and the crystal resonator CR is oscillated while sequentially transporting the carriers C along a plurality of transport directions (X directions). This is an in-line type temperature test apparatus 1 for measuring a frequency, and the identification unit 3 identifies each of the plurality of carriers C and the 24 crystal resonators CR mounted on the carrier C. The identification unit (first identification unit 31) performed before measuring the oscillation frequency at each temperature is specified with the carrier C, and the arrangement of the crystal resonator CR mounted on the carrier C on the carrier C is specified. In addition, the identification unit (second identification unit 32) that performs the measurement after measuring the oscillation frequency at each temperature accompanying the temperature change of the crystal unit CR, By measuring the oscillation frequency at each temperature with a degree change can be performed to confirm the crystal oscillator CR to be sorted in quality. As described above, according to the present embodiment, it is possible to more accurately select the quality of the plurality of crystal resonators CR by the identification unit 3 that performs the identification twice.

  Further, the carrier C is given a barcode C2, and the identification unit 3 identifies the carrier C and the crystal resonator CR mounted on the carrier C by identifying the barcode C2 attached to the carrier C. Can be easily identified.

  In addition, a sorting unit 6 that sorts out a good crystal resonator CR and a defective crystal resonator CR is provided behind the second discriminating unit 32 in the conveyance direction of the crystal unit CR. A defective product transport unit 62 that transports a non-defective crystal resonator CR to a defective product storage unit (not shown) and a non-defective product transport unit 63 that transports a non-defective crystal resonator CR to a good product storage unit (not shown). Since the crystal units CR are sequentially arranged along the conveyance direction (X direction) of the vibrator CR, it is possible to prevent the defective crystal vibrator CR from being conveyed to the non-defective product conveyance unit. Therefore, according to the present embodiment, it is possible to prevent the defective crystal resonator CR from being mistakenly conveyed to the non-defective product container.

  Further, the measurement unit 5 is provided with a pair of probe pins 543 for measuring the oscillation frequency of the crystal resonator CR and a piano wire 544 for preventing the pair of probe pins 543 from adhering to the crystal resonator CR. Therefore, it is possible to prevent the pair of probe pins 543 from adhering to the crystal resonator CR and not being separated after the measurement of the oscillation frequency of the crystal resonator CR using the pair of probe pins 543.

  Further, the pair of probe pins 543 and the piano wire 544 have different stroke amounts, and the piano wire 544 has a crystal resonator CR that precedes the pair of probe pins 543 when measuring the oscillation frequency of the crystal resonator CR. And after the measurement of the oscillation frequency of the crystal resonator CR is completed, the pair of probe pins 543 are separated from the crystal resonator CR. It is possible to prevent the probe pin 543 from holding the bonded state to the crystal resonator CR.

  In addition, two pairs of probe pins 543 are provided as shown in FIG. 8 (two heads 542 are provided), and these two pairs of probe pins 543 are disposed apart from each other. Interference with each other in each control circuit (not shown) connected to the pair of probe pins 543 can be avoided.

  In addition, since the varicap, which is a variable capacitor, is connected to the piano wire 544, the capacitance can be adjusted automatically, and this embodiment is a preferred form for automating the temperature test apparatus 1.

In this embodiment, the crystal resonator CR shown in FIG. 8 is used as the piezoelectric vibration device. However, the present invention is not limited to this, and other forms of crystal resonators, crystal filters, crystal oscillators, etc. May be. In addition to a quartz crystal device, any piezoelectric vibration device using a piezoelectric single crystal material such as piezoelectric ceramic or LiNbO ₂ may be used.

  In this embodiment, the oscillation frequency of the crystal resonator CR is measured. However, the present invention is not limited to this, and other characteristics such as a series resonance resistance value, an oscillation frequency, and The quality of the crystal resonator CR may be determined by measuring the series resonance resistance value.

  In the present embodiment, the crystal resonator CR determined as the same non-defective product as the crystal resonator CR to be inspected is used as the reference work R. However, the present invention is not limited to this, and the crystal vibration to be inspected is not limited thereto. A good piezoelectric vibration device in which a quartz crystal vibrating piece having a thickness larger than that of the quartz crystal vibrating piece mounted in the child CR may be used. In this case, when the temperature of the reference work R (specifically, the temperature of the crystal vibrating piece) is the set temperature, the temperature of the thin crystal resonator CR to be tested (specifically, the temperature of the crystal vibrating piece) is The set temperature is reached. Therefore, the measurement of the reference work R in the measurement unit 5 can stabilize the temperature setting in the measurement unit 5. Further, even when the reference work R is warped when the reference work R is pressed by the pair of probe pins 543 in order to measure the characteristics of the reference work R, the reference work R is mounted therein as in this embodiment. If the quartz crystal vibrating piece is thick, the quartz crystal vibrating piece is unlikely to warp. Therefore, it is possible to suppress deterioration of characteristics such as oscillation frequency fluctuation of the reference work R due to the warp of the quartz crystal resonator element. Therefore, this configuration is preferable for measuring characteristics such as the oscillation frequency of the reference work R.

  In this embodiment, the temperature test of the crystal resonator CR using the reference work R is performed. However, this is a preferred example and the present invention is not limited to this. Therefore, the temperature test of the crystal resonator CR may be performed without using the reference work R.

  In the present embodiment, the soaking plates 49 and 57 are used as part of the standby unit 4 and the measuring unit 5, but this is a preferred example and is not limited thereto. Therefore, it is not necessary to use the soaking plates 49 and 57 for part of the standby unit 4 and the measurement unit 5.

  In this embodiment, a maximum of 24 crystal resonators CR are mounted on one carrier C. However, the number of mounted crystal resonators CR is not limited, and an arbitrary number of crystal resonators can be mounted. Any form is possible.

  Further, in the present embodiment, the carrier C is transported along the short side direction in plan view as shown in FIG. 1, in order to suppress the inspection time of the temperature test apparatus 1 for one carrier C. Is the optimal carrier C arrangement. However, the present invention is not limited to this, and as shown in FIG. 12, the carrier C may be conveyed along the long side direction in plan view.

  In addition, the conveyance direction in one direction (X direction) of the crystal resonator CR in the present embodiment is not strictly a conveyance direction along the X direction, and the crystal resonator CR does not circulate. The conveyance direction of child CR should just face one side.

  In the present embodiment, the standby unit 4 and the measurement unit 5 are provided in the temperature chamber 11, but the invention is not limited thereto. For example, not only the standby unit 4 and the measurement unit 5 but also the identification unit 3. May also be provided in the temperature chamber 11.

  In the present embodiment, the temperature of the first temperature region 12 in the temperature bath 11 is set to −30 ° C., the temperature of the second temperature region 13 is set to + 25 ° C., and the temperature of the third temperature region 14 is set to Although it is set to + 80 ° C., the present invention is not limited to this, and a plurality of temperature regions may be configured. Further, as shown in the present embodiment, when an AT-cut crystal resonator CR is used for the piezoelectric vibration device, the oscillation frequency of the crystal is composed of a cubic curve. It is preferable to be configured from a temperature range (low temperature, medium temperature, high temperature range). In addition to the present embodiment, for example, a temperature region may be configured for each configuration of the measurement unit 5 and the standby unit 4. In this case, more detailed temperature setting can be performed.

  Further, in this embodiment, the plurality of temperature regions are temperature regions set in the order of low temperature, medium temperature, and high temperature along the transport direction (X direction) of the carrier C, but this is a preferable example. It is not limited. For example, the temperature range may be set in the order of high temperature, medium temperature, and low temperature along the conveyance direction (X direction) of the carrier C. In addition, it is preferable that the temperature in a plurality of temperature regions is continuously increased or decreased, but in the order of medium temperature, high temperature, and low temperature along the carrier C conveyance direction (X direction), medium temperature, and low temperature. The temperature range may be set in the order of high temperature.

  In this embodiment, aluminum is used for the carrier C. However, the present invention is not limited to this, and brass or stainless steel may be used. In this case, the cost is excellent.

  In the present embodiment, the first standby unit 41 blows dry air onto the surface of the carrier C to remove the water adhering to the surface of the carrier C, but is not limited to this, and the first measurement Prior to the measurement by the unit 51, the quartz crystal CR may be cooled, and dry air may be blown onto the surface of the carrier C to adhere to the surface of the carrier C to remove moisture.

  Further, in this embodiment, dry air is injected from the dry air generator 71 into the temperature chamber 11, but the present invention is not limited to this, and inert gas generation such as nitrogen gas is not shown. You may inject | pour in the temperature tank 11 from an apparatus. In order to reduce costs, it is preferable to inject dry air, and in order to prevent condensation and the like, it is preferable to inject an inert gas. Therefore, it is preferable to use dry air and inert gas arbitrarily or in combination depending on the conditions of the piezoelectric vibration device having temperature characteristics in the temperature test apparatus 1.

  In this embodiment, the piano wire 544 is used as an adhesion preventing means, but the present invention is not limited to this, and other members may be used, for example, an insulating material (plastic, ceramic) or the like. May be. In this case, it is possible to suppress a short circuit between the terminal electrodes of the crystal resonator CR due to adhesion of the adhesion preventing means to the crystal resonator CR. In particular, when the adhesion preventing means is an insulating material, the size of the case of the crystal resonator CR to be inspected is reduced, and adhesion to both terminal electrodes CR1 and CR2 composed of different electrodes of the crystal resonator CR is prevented. Even when the means are in contact with each other, it is possible to avoid a short circuit between the terminal electrodes CR1 and CR2. In particular, the member is preferably a member that is difficult to freeze and can prevent adhesion between the probe pin and the crystal resonator due to freezing.

  In this embodiment, a Peltier element is used as the temperature control element of the first measurement unit 51 and a heater is used as the temperature control element of the second and third measurement units 52 and 53. However, the present invention is not limited to this. Alternatively, any temperature control element and a combination thereof may be used according to the environment and manufacturing cost.

  In this embodiment, the set temperatures of the first standby unit 41 and the first measurement unit 51, the set temperatures of the second standby unit 42 and the second measurement unit 52, and the third standby unit 43 and the third measurement unit 53 are set. Although the set temperature is the same, it is not limited to this. For example, the set temperature of the first standby unit 41 is set to −40 ° C., the set temperature of the first measurement unit 51 is set to −30 ° C., the set temperature of the second standby unit 42 is set to + 40 ° C., and the setting of the second measurement unit 52 is performed. The temperature may be + 25 ° C., the set temperature of the third standby unit 43 may be + 90 ° C., and the set temperature of the third measurement unit 53 may be + 80 ° C. That is, in the temperature region (in this case, the first temperature region 12) in which the measurement unit (for example, the first measurement unit 51) is provided, the measurement unit (in this case, along the transport direction (X direction) of the crystal resonator CR). The set temperature of another temperature chamber (in this case, the first standby unit 41) serving as the front chamber of the first measurement unit 51) overshoots the set temperature of the measurement unit (in this case, the first measurement unit 51). The temperature may be set so as to be. Therefore, the set temperature of the first standby unit 41 is set to + 90 ° C., the set temperature of the first measurement unit 51 is set to + 80 ° C., the set temperature of the second standby unit 42 is set to + 25 ° C., and the set temperature of the second measurement unit 52 is set. It may be set to + 40 ° C., the set temperature of the third standby unit 43 may be set to −40 ° C., and the set temperature of the third measurement unit 53 may be set to −30 ° C. As described above, this example works particularly well when the set temperatures of the plurality of temperature regions shift from high temperature to low temperature or from low temperature to high temperature along the conveyance direction of the crystal resonator CR. Further, comparing this example and the test time when testing the quality of the oscillation frequency of the crystal resonator CR of the present embodiment described above, the present example in which the set temperature is overshooted is shown in FIG. Shorter. This is related to the fact that the time for adjusting the temperature of the crystal resonator CR to the set temperature in the measurement unit 5 can be reduced. That is, it relates to reducing the standby time of the crystal resonator CR in the standby unit 4. As described above, according to this configuration, the first to third temperature regions 12 to 14 have a plurality of temperature chambers (measurement unit 5 and standby unit 4) along the conveyance direction (X direction) of the crystal resonator CR. The measurement unit 5 is provided in any one of the plurality of temperature chambers, and among the plurality of temperature chambers, the temperature chamber in which the measurement unit 5 is provided, and the temperature chamber in which the standby unit 4 is provided Are set to different temperatures so that the temperature of the standby unit 4 serving as the front chamber of the measurement unit 5 overshoots the temperature of the measurement unit 5 along the conveyance direction (X direction) of the crystal resonator CR. Since the temperature is set, the crystal resonator CR is overshooted with respect to the temperature of the temperature chamber in which the measurement unit 5 is provided before the measurement of the crystal resonator CR by the measurement unit 5. Change the temperature of the CR up and down in a short time, and crystal vibration up to the set temperature of the measurement unit 5 It is possible to shorten the time intended to adjust the temperature of the CR. In particular, this configuration is suitable when the set temperatures of the first to third temperature regions 12 to 14 shift from a high temperature to a low temperature or from a low temperature to a high temperature along the conveyance direction of the crystal resonator CR. The term “overshoot” as used herein means that the temperature of the crystal resonator CR before the measurement of the oscillation frequency in the measurement unit 5 is matched with the set temperature in the measurement unit 5 instead of setting the temperature as the set temperature. In view of the temperature of the crystal resonator CR before the measurement of the oscillation frequency in the measurement unit 5, the temperature of the standby unit 4 serving as the front chamber of the measurement unit 5 is set to a temperature exceeding the set temperature, and the temperature of the crystal unit CR Means that it is fluctuated rapidly. For example, when the temperature of the crystal resonator CR conveyed to the first standby unit 41 is ± 0 ° C. and the set temperature in the first measurement unit 51 is + 40 ° C., the first chamber that is the front chamber of the first measurement unit 51 is used. 1 indicates that the temperature of the standby unit 41 is set to + 60 ° C. Further, when the temperature of the crystal resonator CR conveyed to the second standby unit 52 is + 70 ° C. and the set temperature in the second measurement unit 52 is + 40 ° C., the second chamber which is the front chamber of the second measurement unit 52 is used. This indicates that the temperature of the standby unit 42 is set to + 20 ° C.

  It should be noted that the present invention can be implemented in various other forms without departing from the spirit, gist, or main features. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  The present invention can be preferably applied in the manufacturing process of a piezoelectric vibration device.

FIG. 1 is a schematic block diagram illustrating the configuration of the temperature test apparatus according to the present embodiment. FIG. 2 is a schematic perspective view of an arrangement portion provided in the temperature test apparatus according to the present embodiment. FIG. 3 is a schematic perspective view of a first identification unit provided in the temperature test apparatus according to the present embodiment. FIG. 4 is a schematic perspective view of a first standby unit provided in the temperature test apparatus according to the present embodiment. FIG. 5 is a schematic perspective view of a second standby unit provided in the temperature test apparatus according to the present embodiment. FIG. 6 is a schematic perspective view of a first measurement unit provided in the temperature test apparatus according to the present embodiment. FIG. 7 is a schematic perspective view of the inspection unit in the first measurement unit provided in the temperature test apparatus according to the present embodiment. FIG. 8 is a diagram illustrating the positional relationship between the head and the carrier in the first measurement unit provided in the temperature test apparatus according to the present embodiment. FIGS. 9A to 9E are process diagrams showing a measurement process of the oscillation frequency of the crystal resonator by the inspection unit of the temperature test apparatus according to the present example. FIG. 10 is a schematic perspective view of a selection unit provided in the temperature test apparatus according to the present embodiment. FIGS. 11A to 11D are process diagrams illustrating a carrier transport process in the temperature test apparatus according to the present embodiment. FIG. 12 is a diagram illustrating carrier transport in a temperature test apparatus according to another example of the present embodiment. FIG. 13A is a graph showing the tact time for one carrier when the temperature is overshot in the standby section of the temperature test apparatus according to the present embodiment. FIG.13 (b) is the graph which showed the tact time with respect to one carrier in case the temperature is not overshooted in the standby | waiting part of the temperature test apparatus concerning a present Example. FIG. 14 is a schematic internal open view of a temperature bath of a conventional temperature test apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Temperature test apparatus 11 Temperature tank 12-13 1st-3rd temperature range (temperature range)
15 Warp prevention pin 3 Identification part 461,462,551,552 Shutter 5 Measurement part 543 Probe pin 544 Piano wire (adhesion prevention means)
6 Sorting unit 62 Defective product transporting unit 63 Non-defective product transporting unit C Carrier C2 Barcode CR Quartz crystal resonator
R reference work

Claims (11)

A measurement unit that measures the characteristics at each temperature according to the temperature change of the piezoelectric vibration device is provided, and a temperature test of the piezoelectric vibration device that tests the quality of the characteristics of the plurality of piezoelectric vibration devices based on the characteristics measured by the measurement unit In the device
It is an in-line type temperature test apparatus that measures the characteristics of a piezoelectric vibration device while conveying the piezoelectric vibration device in one direction in one temperature bath,
In the temperature bath, a plurality of temperature regions are configured along the conveyance direction of the piezoelectric vibration device,
In the plurality of temperature regions, the measurement units corresponding to the temperature regions are provided,
The temperature measuring apparatus for a piezoelectric vibration device, wherein the plurality of measurement units measure characteristics of the piezoelectric vibration device at different preset temperatures.   The temperature test apparatus for a piezoelectric vibration device according to claim 1, wherein a shutter is interposed between the plurality of measurement units.   3. The temperature testing apparatus for a piezoelectric vibration device according to claim 1, wherein dry air or inert gas is injected in the temperature region. The temperature region, a plurality of temperature chambers are arranged along the conveyance direction of the piezoelectric vibration device,
The measurement unit is provided in any one of the plurality of temperature chambers,
Among the plurality of temperature chambers, the temperature chamber provided with the measurement unit and at least one other temperature chamber are set to different temperatures,
The temperature of the other temperature chamber that becomes the front chamber along the conveying direction of the piezoelectric vibrating device in the temperature chamber provided with the measurement unit is overshooted with respect to the temperature of the temperature chamber provided with the measurement unit. The temperature testing apparatus for a piezoelectric vibration device according to any one of claims 1 to 3, wherein the temperature is a set temperature.   5. The non-defective piezoelectric vibration device, which is the same device as the piezoelectric vibration device for performing a temperature test, is used as a reference work serving as a reference for characteristics at each temperature accompanying a temperature change. A temperature test apparatus for a piezoelectric vibration device according to claim 1. A piezoelectric vibrating piece is mounted inside the piezoelectric vibrating device.
As a reference work that serves as a reference for the characteristics at each temperature accompanying a temperature change, a good piezoelectric vibration device with a piezoelectric vibration piece thicker than the piezoelectric vibration piece mounted inside the piezoelectric vibration device that performs the temperature test is used. The temperature testing apparatus for a piezoelectric vibration device according to claim 1, wherein the temperature testing apparatus is used.   The measurement part measures the characteristics of the reference work, calculates an error of the actual temperature with respect to the set temperature in the temperature region from the measured characteristics of the reference work, and from this error, sets the characteristics of the piezoelectric vibration device at the actual temperature. 7. The temperature testing apparatus for a piezoelectric vibration device according to claim 5, further comprising a control unit that corrects the characteristics of the piezoelectric vibration device at a temperature. It is an in-line type temperature test apparatus in which a plurality of piezoelectric vibration devices are mounted on one carrier in one temperature bath, and the characteristics of the piezoelectric vibration devices are measured while sequentially conveying the carriers in one direction.
8. The piezoelectric vibration according to claim 1, further comprising a warp prevention pin that suppresses warping of the carrier when measuring characteristics of the piezoelectric vibration device in the measurement unit. 9. Device temperature test equipment.   9. The temperature testing apparatus for a piezoelectric vibration device according to claim 1, further comprising an identification unit that identifies the plurality of piezoelectric vibration devices.   10. The temperature testing apparatus for a piezoelectric vibrating device according to claim 9, wherein the identification unit is arranged at a front and rear position of the measuring unit along a conveying direction of the piezoelectric vibrating device.   2. The measurement unit according to claim 1, further comprising: a pair of probe pins for measuring characteristics of the piezoelectric vibration device; and an adhesion preventing unit for preventing adhesion of the pair of probe pins to the piezoelectric vibration device. The temperature test apparatus for a piezoelectric vibration device according to any one of 10.

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