JP2007113939A - Measuring device and method therefor, stage device, and exposure device and method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To precisely measure information regarding the shape of reflection surface. <P>SOLUTION: The wafer table WTB comprises the side walls 27A and 27B having reflex surfaces 54X and 54Y of mirror surfaces; the libs 21 connecting with the rear surface side of the reflection surface to the side walls wherein upon measuring the information regarding the shape of the reflection surface, the measuring pitch and the intervals between the libs are set with predetermined relations. Therefore, when the shape of the reflection surface of the first member receives affection from the libs by contacting to the first member, the precision measurement can be made possible by making the relationship between the measuring pitch and the intervals between libs to predetermined relation. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a measuring apparatus, a measuring method, a stage apparatus, an exposure apparatus, and an exposure method, and more specifically, information on the position of the object to be measured by irradiating a length measuring beam to a reflecting portion provided on the object to be measured. The present invention relates to a measuring apparatus and a measuring method for measuring the above, a stage apparatus including the measuring apparatus, an exposure apparatus including the stage apparatus, and an exposure method for forming a pattern on a substrate while measuring the position of the substrate using the measuring method.

  Conventionally, in a lithography process for manufacturing a semiconductor element, a liquid crystal display element, etc., a wafer in which a pattern formed on a mask or a reticle (hereinafter referred to as “reticle”) is applied with a resist or the like via a projection optical system Alternatively, a step-and-repeat reduction projection exposure apparatus (so-called stepper) that transfers onto a photosensitive object such as a glass plate (hereinafter collectively referred to as “wafer”), or a step-and-scan with an improved version of this stepper. A scanning projection exposure apparatus of the type (so-called scanning stepper) is mainly used.

  In this type of exposure apparatus, for measuring the position of a wafer stage that can move in a two-dimensional plane while holding the wafer, for example, light wave interference using a He-Ne frequency stabilized laser that continuously oscillates at a wavelength of 633 nm as a light source. A meter (laser interferometer) is used.

  Since the laser interferometer can only perform one-dimensional measurement due to its nature, it is necessary to prepare two laser interferometers when performing two-dimensional coordinate measurement, for example, measurement of XY coordinates. Then, a length measuring beam is irradiated perpendicularly from the two laser interferometers to each of the two reflecting surfaces orthogonal to each other provided on the wafer stage, and the distance from the reference point in the direction of the measuring beam of each reflecting surface is set. By measuring the change, the two-dimensional coordinate position of the wafer stage is obtained (see, for example, Patent Document 1).

  Recently, the Y-side end surface extending in the X-axis direction and the X-side end surface extending in the Y-axis direction of the wafer stage (or wafer table) are mirror-finished, and the mirror surface is used as the reflection surface. The reflecting surface needs to have a length in the X-axis direction and the Y-axis direction corresponding to the required movement stroke of the wafer stage (wafer table), and is used for measuring the position of the wafer stage (wafer table). Therefore, extremely high flatness is required.

  However, in order to ensure good flatness of the reflecting surface, highly accurate surface processing (mirror processing) is indispensable, and the manufacturing cost is very high. Recently, in order to accelerate the wafer stage (wafer table), it is necessary to reduce the weight while maintaining the rigidity of the wafer stage (wafer table). As a means for this, it is conceivable that the wafer stage (wafer table) has a hollow structure and ribs are provided in a grid-like arrangement for reinforcement.

  However, by providing ribs inside the wafer stage (wafer table), the flatness of the reflecting surface may be affected by the presence of the ribs during surface processing (mirror processing) of the reflecting surface.

Japanese Patent No. 329584

  The present invention has been made under the circumstances described above, and from a first viewpoint, the length measurement beam is irradiated to the reflecting portion provided on the object to be measured to measure information on the position of the object to be measured. The reflection unit includes a first member (27A, 27B) having a mirror-like reflection surface (54X, 54Y), and a plurality of contacts that are in contact with the first member on the back surface side of the reflection surface. A second member (110A) having a plurality of ribs 21, wherein a measurement pitch for measuring information related to the shape of the reflecting surface and an interval between the ribs are set in a predetermined relationship. It is the 1st measuring device.

  According to this, since the measurement pitch when measuring information related to the shape of the reflecting surface and the interval between the ribs are set in a predetermined relationship, the shape of the reflecting surface of the first member is the rib to the first member. If the measurement pitch is affected by the contact, the information regarding the shape of the reflection surface can be accurately measured by setting the measurement pitch and the rib interval to a predetermined relationship.

  From a second viewpoint, the present invention is a stage device including the first measuring device, and includes a table (WTB) provided with the reflecting portion; and a driving device that moves the table. It is a stage device.

  According to this, since the first measuring device capable of accurately measuring the information on the shape of the reflecting surface is provided, the information on the shape of the reflecting surface of the table measured by the measuring device is taken into consideration. Thus, by moving the table via the driving device, it is possible to realize a highly accurate table movement.

  From a third viewpoint, the present invention is a measuring apparatus that irradiates a length measuring beam to a plurality of positions different from each other in a reflecting portion provided in a measured object (WTB) and measures information related to the position of the measured object. The reflecting portion includes a first member (27A, 27B) having a mirror-like reflecting surface (54X, 54Y) irradiated with the length measuring beam; and a back surface of the reflecting surface with respect to the first member. A second member (110A) having a plurality of ribs (21) in contact on the side, and the interval between the plurality of positions irradiated with the length measuring beam and the interval between the ribs are set to a predetermined relationship It is the 2nd measuring device characterized by being carried out.

  According to this, since the interval between the plurality of positions irradiated with the length measurement beam and the interval between the ribs are set in a predetermined relationship, the shape of the reflecting surface of the first member is the rib to the first member. Even when affected by contact, it is possible to measure information related to the position of the object to be measured in consideration of the position of the rib.

  From a fourth aspect, the present invention is a stage device provided with the second measuring device of the present invention, and a table (WTB) provided with the reflecting portion; a drive device for moving the table; Is a stage apparatus.

  According to this, since the measurement device that can measure the information related to the position of the table with high accuracy is provided, the high-precision table can be obtained by moving the table via the drive device in consideration of the measurement result. Can be realized.

  From the fifth aspect, the present invention is provided on the object to be measured, and is in contact with the first member having a mirror-like reflection surface (54X, 54Y) on the back surface side of the reflection surface with respect to the first member. Using a measuring device that measures information related to the position of the object to be measured by irradiating a measuring beam to a reflecting portion having a second member (110A) having a plurality of ribs (21), A measurement method for measuring information related to a shape, wherein a measurement pitch for measuring information related to the shape of the reflecting surface using the measuring device is set to a predetermined relationship with respect to the interval between the ribs. This is the first measurement method.

  According to this, since the measurement pitch which measures the information regarding the shape of the reflective surface using the measuring device is set to a predetermined relationship with respect to the rib interval, the shape of the reflective surface of the first member is the first. Even when it is affected by the contact of the rib with the member, it is possible to accurately measure the information regarding the shape of the reflecting surface by setting the measurement pitch and the rib interval to a predetermined relationship.

  From a sixth aspect, the present invention provides a step of measuring information related to the shape of the reflecting portion using the first measurement method of the present invention; and moving the substrate (W) together with the object to be measured. Forming a pattern on the substrate.

  According to this, information on the shape of the reflecting portion is measured with high accuracy, and the pattern is formed on the substrate while moving the substrate together with the object to be measured in consideration of the measurement result. It can be realized.

  From a seventh aspect, the present invention provides a first member (27A, 27B) having a mirror-like reflecting surface (54X, 54Y) provided on the object to be measured, and the reflecting surface with respect to the first member. A measuring method for measuring information related to the position of the object to be measured by irradiating a length measuring beam onto a reflecting portion having a second member (110A) having a plurality of ribs (21) in contact on the back surface side. The second measuring method is characterized in that the length measuring beam is irradiated to a plurality of different positions in the reflecting portion, and the interval between the plurality of positions and the interval between the ribs are set in a predetermined relationship. is there.

  According to this, the reflection part provided in the object to be measured has the first member having a mirror-like reflection surface, and the second member having a plurality of ribs that contact the first member on the back surface side of the reflection surface. Since the interval between the plurality of positions irradiated with the length measurement beam and the interval between the ribs are set in a predetermined relationship, the shape of the reflection surface of the first member is the first. Even when it is influenced by the contact of the rib with the member, it is possible to measure information on the position of the object to be measured in consideration of the position of the rib.

  According to an eighth aspect of the present invention, a substrate (W) is placed on the object to be measured, and a pattern is formed on the substrate while measuring the position of the substrate using the second measurement method of the present invention. This is an exposure method to be formed.

  According to this, the substrate can be positioned with high accuracy by using a measurement method capable of measuring the object to be measured with high accuracy. This makes it possible to form a pattern on the substrate with high accuracy.

  According to a ninth aspect of the present invention, there is provided an exposure apparatus for irradiating a substrate (W) with an energy beam (IL) to form a pattern on the substrate, the first and second stage apparatuses of the present invention. Is an exposure apparatus that holds the substrate.

  According to this, since the stage apparatus capable of positioning the table with high accuracy holds the substrate, it is possible to form the pattern on the substrate with high accuracy.

<< First Embodiment >>
A first embodiment of the present invention will be described below with reference to FIGS.

  FIG. 1 shows a schematic configuration of an exposure apparatus 10 according to the first embodiment. The exposure apparatus 10 is a batch exposure type projection exposure apparatus such as a stepper.

  The exposure apparatus 10 includes an illumination unit IOP, a reticle stage RST that holds a reticle R, a projection optical system PL, and a wafer stage WST that holds a wafer W as a substrate and moves in an XY two-dimensional direction in an XY plane. 50, a control system thereof, and a column 34 for holding the projection optical system PL.

The illumination unit IOP includes a light source and an illumination optical system, and illumination light as an energy beam in a rectangular or arcuate illumination area defined by a field stop (also referred to as a mask king blade or a reticle blind) disposed therein. IL is irradiated, and the reticle R on which the circuit pattern is formed is illuminated with uniform illuminance. Here, as the illumination light IL, vacuum ultraviolet light such as ArF excimer laser light (wavelength 193 nm) or F ₂ laser light (wavelength 157 nm) is used.

  The reticle stage RST is disposed below the illumination unit IOP. In practice, reticle stage RST is placed on the upper surface of projection optical system PL (however, in FIG. 1, for convenience of illustration, reticle stage RST and projection optical system PL are shown apart from each other). Specifically, reticle stage RST can be finely driven in the X-axis direction, Y-axis direction, and θz direction while holding reticle R on the base fixed to the upper surface of projection optical system PL.

  A part of the reticle R is provided with a pair of alignment marks. In the present embodiment, before the exposure, the pair of alignment marks are measured and positioned using a reticle alignment system (not shown).

  As the projection optical system PL, here, a bilateral telecentric reduction system and a refractive optical system including a plurality of lens elements having a common optical axis in the Z-axis direction are used. The projection magnification β of the projection optical system PL is, for example, 1/4 or 1/5. Therefore, as described above, when the reticle R is illuminated by the illumination light IL from the illumination unit IOP, the circuit pattern in the illumination area formed on the reticle R is illuminated on the wafer W by the projection optical system PL. Is reduced and projected onto the irradiation area (exposure area) of the illumination light IL conjugate with the light, and a reduced image (partial equality image) of the circuit pattern is transferred and formed.

  A flange FLG is provided at substantially the center in the height direction of the lens barrel of the projection optical system PL.

  The column 34 has three legs 32b (the legs on the back side of the paper are not shown) whose lower ends are fixed to the floor F, and a top plate supported above the floor F by the legs 32b. Part 32a. An opening 34a is formed in the central portion of the top plate portion 32a so as to penetrate in the vertical direction (Z-axis direction).

  The projection optical system PL has three suspension support mechanisms 37 (one suspension support mechanism on the back side of the drawing is not shown) fixed at one end to the lower surface side of the top plate portion 32a constituting the column 34. Suspended and supported by the flange FLG. Each of these suspension support mechanisms 37 includes a coil spring 36 and a wire 35 which are flexible connection members. Since the coil spring 36 vibrates like a pendulum in the direction perpendicular to the optical axis, the vibration isolation performance in the direction perpendicular to the optical axis of the projection optical system PL (the vibration of the floor is transmitted to the projection optical system PL). Performance). Also, it has high vibration isolation performance in the direction parallel to the optical axis.

  Further, a convex portion 134a is formed in the vicinity of the central portion in the Z-axis direction of each leg portion 32b of the column 34, and a drive mechanism 40 is provided between each convex portion 134a and the outer peripheral portion of the flange of the projection optical system PL. Is provided. The drive mechanism 40 includes a voice coil motor that drives the projection optical system PL in the radial direction of the lens barrel, and a voice coil motor that drives the projection optical system PL in the optical axis direction (Z-axis direction). By these drive mechanisms 40, the projection optical system PL can be moved in directions of six degrees of freedom.

  The flange FLG of the projection optical system PL is provided with an acceleration sensor (not shown) for detecting the acceleration in the direction of 6 degrees of freedom of the projection optical system PL. Based on the acceleration information detected by the acceleration sensor, A main controller (not shown) controls the drive of the voice coil motor of the drive mechanism 40 so that the projection optical system PL is stationary with respect to the column 34 and the floor surface F.

  From the lower surface of the flange FLG of the projection optical system PL, a ring-shaped measurement mount 51 is suspended and supported via three support members 53 (however, a support member on the back side of the paper surface is not shown). The three support members 53 are actually configured to include link members having flexure portions that can be displaced by five degrees of freedom other than the longitudinal direction of the support member 53 at both ends thereof, and the measurement mount 51 and the flange FLG. The measurement mount 51 can be supported with almost no stress between the two.

  The measurement mount 51 holds a wafer interferometer 54, an alignment system ALG, a multipoint focal position detection system (not shown), and the like. As the alignment system ALG, an image processing type sensor can be used, and this image processing type sensor is disclosed in, for example, Japanese Patent Laid-Open No. 4-65603. As the multipoint focal position detection system, for example, a focus sensor disclosed in JP 2001-75294 A can be used.

  The stage apparatus 50 includes a wafer stage WST and a wafer stage drive system that drives the wafer stage WST.

  Wafer stage WST is levitated and supported on the upper surface of stage surface plate BS arranged horizontally below projection optical system PL via an air bearing or the like provided on the bottom surface thereof.

  Here, the stage surface plate BS is directly installed on the floor surface F, and the surface (upper surface) on the + Z side is processed so as to have a very high flatness, and the wafer stage WST. The movement reference plane (guide plane).

  As shown in FIG. 2, wafer stage WST includes stage 31 and wafer table WTB mounted via three self-weight cancellers 150 provided at three locations not on a straight line on stage 31. Yes. The three self-weight cancellers 150 are configured to support the wafer table WTB at three points on the stage 31 and each include a drive mechanism (such as a voice coil motor). By each drive mechanism, wafer table WTB is minutely driven in the three-degree-of-freedom directions of Z-axis direction, θx direction (rotation direction about X axis), and θy direction (rotation direction about Y axis).

Further, an X fine movement mechanism VX and a pair of Y fine movement mechanisms VY ₁ and VY ₂ are provided between wafer table WTB and stage 31. These X and Y fine movement mechanisms are, for example, a voice coil motor including a stator including an armature unit and a mover including a magnetic pole unit, and the respective stators are fixed to the upper surface of the stage 31. Each mover is fixed to the side surface of wafer table WTB. Among these, the X fine movement mechanism VX drives the wafer table WTB in the X axis direction, and the pair of Y fine movement mechanisms VY ₁ and VY ₂ moves the wafer table WTB in the Y axis direction and the θz direction (rotation direction around the Z axis). ) In two directions of freedom.

  The stage 31 includes a frame member whose XZ cross section is rectangular, and a Y mover (not shown) is provided in the internal space of the frame member. A plurality of air bearings (not shown) are provided on the lower surface of the frame-like member, and the wafer stage WST is levitated and supported above the above-described guide surface via a clearance of about several μm via these air bearings.

  The Y mover constitutes a Y axis linear motor together with a Y stator 134Y whose longitudinal direction is the Y axis direction, and drives the stage 31 together with the wafer table WTB and the wafer W in the Y axis direction. Hereinafter, this Y-axis linear motor is also referred to as a Y-axis linear motor 134Y using the same reference numeral as that of the Y stator.

X movers 132X ₁ and 132X ₂ are fixed to one end and the other end of the Y stator 134Y in the Y-axis direction. The X mover 132X ₁ constitutes a first X axis linear motor together with the X stator 134X ₁ provided in the vicinity of the + Y side of the stage surface plate BS and having the X axis direction as the longitudinal direction. The X mover 132X ₁ constitutes a second X-axis linear motor together with an X stator 134X ₂ provided in the vicinity of the −Y side of the stage surface plate BS and having a longitudinal direction in the X-axis direction. In the following description, the first X-axis linear motor 134X ₁ , the second X-axis linear motor, and the second X-axis linear motor are denoted by the same reference numerals as those of the X stator. It shall also be referred to as a 134X _2.

In the present embodiment, wafer stage WST is driven along the X-axis direction together with Y-axis linear motor 134Y by _first and second X-axis linear motors 134X ₁ and 134X ₂ . In addition, the X-axis direction electromagnetic force (driving force) generated by the first and second X-axis linear motors 134X ₁ and 134X ₂ may be slightly changed to rotate wafer stage WST in the θz direction. it can.

As can be seen from the above description, in this embodiment, the Y-axis linear motor 134Y, the first and second X-axis linear motors 134X ₁ and 134X ₂ , the three self-weight cancellers 150, the X fine movement mechanism VX, a pair The Y fine movement mechanisms VY ₁ and VY ₂ constitute at least a part of the wafer stage drive system. Each component of the wafer stage drive system is controlled by a main controller (not shown).

  The wafer table WTB has a shape (see FIG. 2) in which two rectangular isosceles triangles having different sizes are combined by cutting out a part of a rectangle in plan view (viewed from above). 3, a bottom plate 38 having substantially the same shape as the top plate 23, a grid-like rib 21 provided between the top plate 23 and the bottom plate 38, Side walls 27 </ b> A, 27 </ b> B, 39 for forming a hollow space between the plate 23 and the bottom plate 38 are included.

  As shown in FIG. 2, a wafer W is attracted and held on the top surface of the top plate 23 by vacuum suction (or electrostatic suction) or the like via a wafer holder 25. Wafer holder 25 is held by suction on the entire back surface of wafer table WTB by vacuum suction.

  The rib 21 has a plurality of X rib portions 121A arranged with a predetermined interval in the X-axis direction and a plurality of X rib portions 121A arranged with a predetermined interval in the Y-axis direction. The Y-rib portion 121B and the X-rib portion 121A and the Y-rib portion 121B are combined in a lattice shape as a whole. By providing the rib 21, the weight of the wafer table WTB is reduced while maintaining the rigidity of the wafer table WTB high.

  The side wall 27A is provided in contact with the −X side end of the rib 21, and the side wall 27B is provided in contact with the + Y side end of the rib 21 (and the + Y side end of the top plate 23). ing. The -X side end surface of the side wall 27A and the + Y side end surface of the side wall 27B are mirror-finished to form reflecting surfaces 54X and 54Y. In the case where all the members constituting the wafer table WTB are composed of different members, this mirror surface processing is performed after assembling all the members, and in this case, when the mirror surface processing is bonded (joined) to the rib. The influence on the flatness of the mirror surface of the rib 21 is reduced, and the flatness of the mirror surface is ensured.

  The top plate 23 and the side walls 27A and 27B may be manufactured by integral molding, and the member 110A including the bottom plate 38, the side walls 39, and the ribs 21 may be manufactured by integral molding.

  Returning to FIG. 1, the position information of wafer stage WST is always detected with a resolution of, for example, about 0.5 to 1 nm by wafer laser interferometer system 58 that irradiates the length measurement beam onto the reflection surfaces of side walls 27A and 27B of wafer table WTB. Has been.

More specifically, as shown in FIG. 4, the wafer laser interferometer system 58 includes three double-pass interferometer units 58Y, 58X ₁ , 58X ₂ , and each interferometer unit 58Y, 58X. ₁ , 58X ₂ , information on the position of the reflecting surfaces 54X, 54Y of the wafer table WTB relative to the reflecting surface of the fixed mirror provided inside, that is, the length measurement beam and the reference beam branched in each interferometer unit The position information of the wafer table WTB (wafer W) is measured using information on the difference in optical path length from the branch point. Each interferometer unit 58Y, 58X ₁ , 58X ₂ is supported by the measurement mount 51 described above.

The interferometer unit 58X ₁ irradiates the measurement beams WXF ₁ and WXF ₂ parallel to the X axis with respect to the reflection surface 54X, and the interferometer unit 58X ₂ measures the length parallel to the X axis with respect to the reflection surface 54X. Beams WX ₁ and WX ₂ are irradiated. On the other hand, the interferometer unit 58Y irradiates the measurement surfaces WY ₁ and WY ₂ parallel to the Y axis to the reflecting surface 54Y.

  As the interferometer, an interferometer capable of irradiating a measurement beam for measuring the position of wafer table WTB in the Z-axis direction may be used, and correspondingly, the side surface of wafer table WTB is used. Alternatively, a reflecting surface inclined by a predetermined angle with respect to the length measuring beam may be formed.

According to these interferometers, during alignment, using the measurement beams WXF ₁ and WXF ₂ of the interferometer unit 58X ₁ , the position of the wafer table WTB in the X-axis direction and the θy direction (the rotation direction around the Y-axis) ) Position. Further, using the measurement beams WY ₁ and WY ₂ of the interferometer unit 58Y, the position of the wafer table WTB in the Y-axis direction and the position in the θx direction (rotation direction about the X axis) are measured.

On the other hand, during exposure, the position of the wafer table WTB in the X-axis direction and the position in the θy direction (rotation direction around the Y-axis) are measured using the measurement beams WX ₁ and WX ₂ of the interferometer unit 58X _2. To do. Similarly to the alignment, the length measurement beams WY ₁ and WY ₂ of the interferometer unit 58Y are used to measure the position of the wafer table WTB in the Y-axis direction and the θx direction (rotation direction about the X axis). .

  Next, a method for measuring the bending of the reflecting surface according to the present embodiment will be described with reference to FIGS. This measurement is performed at the time of manufacturing the exposure apparatus or during regular maintenance, but it is desirable to perform it frequently such as for each lot when the change over time is large.

As a premise, the coordinate system (X, Y) determined by the measurement axes corresponding to the X-axis interferometer 58X ₂ (measurement beam WX ₁ ) and the Y-axis interferometer 58Y (measurement beam WY ₁ ) is the stage coordinate system. Let the origin (0, 0) be the coordinates when the center of the reference wafer WT used for the later-described reflection surface bending measurement is located on the optical axis of the projection optical system PL. In addition, it is assumed that the error in the shot arrangement of the reference wafer WT is extremely small, and the variation in rotation of each shot area is also small.

First, instead of the wafer W when the wafer W is placed on the wafer table WTB (wafer holder 25) of FIG. 5, the reference wafer WT is simply loaded when the wafer W is not placed. This reference wafer WT is a wafer having a very high flatness, and has the same shot areas SA _{11 to} SA on its surface, for example, in an array of 5 columns in the X-axis direction and 5 rows in the Y-axis direction. ₅₅ is formed. A plurality of alignment marks are formed in each of the shot areas SA _ij (i = 1 to 5, j = 1 to 5).

  Note that a plurality of alignment marks may be provided on the street lines between the shot areas without being provided in each shot area.

  In the present embodiment, measurement marks (Mx, My) for measuring the bending of the reflection surfaces 54X and 54Y are formed on the reference wafer WT. The measurement marks are set so that the arrangement thereof has a predetermined relationship with the lattice spacing of the ribs 21 described above.

  Specifically, for example, a measurement mark Mx for measuring the bending of the reflecting surface 54X is provided at a position corresponding to the lattice of the rib 21 along the Y axis, as shown in FIG. Also provided between the lattices of the ribs 21 so as to be equidistant from the adjacent marks. Further, a measurement mark My for measuring the bending of the reflecting surface 54Y is provided at a position corresponding to the lattice of the rib 21 along the X axis, and is equally spaced between the lattice of the rib 21 and the lattice. Is provided. That is, in the present embodiment, as the predetermined relationship, a relationship in which the interval between the measurement marks Mx and My is ½ times the lattice interval of the ribs 21 is employed.

  Next, the alignment of the reference wafer WT is performed as follows.

First, search alignment is performed by arbitrarily selecting a predetermined number (two or more) of shot areas in the shot area SA _ij . Specifically, the X and Y coordinates of a search mark (not shown) in the selected shot area are measured using the alignment system ALG, and the measurement results and the sample coordinate system (on the reference wafer WT) of the search mark are measured. Rough conversion parameters from the sample coordinate system (x, y) to the stage coordinate system (X, Y) are obtained from the design arrangement coordinates in the coordinate system (x, y).

  The conversion parameter includes a rotation angle θ of the x axis with respect to the X axis, and offsets Ox and Oy in the X axis direction and the Y axis direction. Therefore, for example, the rotation angle is corrected by a method such as rotating the reference wafer WT so as to correct the rotation angle θ, or regarding the axis rotated by the rotation angle θ with respect to the X axis as a new X axis. Then, using the obtained offsets Ox and Oy, the arrangement coordinates on the stage coordinate system (X, Y) are obtained from the arrangement coordinates of each mark on the sample coordinate system (x, y).

  Next, the alignment mark on the reference wafer WT is measured using the alignment system ALG, and the amount of positional deviation in the X-axis direction from the design position of the alignment mark formed in the shot area, and the design of the alignment mark The amount of displacement in the Y-axis direction from the position is calculated. Then, for example, an enhanced global alignment (EGA) type alignment method disclosed in Japanese Patent Laid-Open No. 62-84516 is applied, and based on the alignment data and design arrangement coordinates, the reference wafer WT is used. A conversion parameter from the upper sample coordinate system (x, y) to the stage coordinate system (X, Y) is calculated.

  Conversion parameters at this time include wafer scaling γx, γy, wafer rotation θ, orthogonality error w, and offsets Ox, Oy.

  Next, using the conversion parameters obtained as described above, the measurement marks Mx and My on the reference wafer WT are arranged on the stage coordinate system (X, Y) from the arrangement coordinates on the sample coordinate system (x, y). Find the array coordinates at. In this measurement, when measuring the measurement mark Mx, the wafer table WTB is fixed at a predetermined position in the X-axis direction, and stepped along the Y-axis at the same interval as the measurement mark Mx. Then, all the measurement marks Mx are measured. Further, when measuring the measurement mark My, the wafer table WTB is fixed at a predetermined position in the Y-axis direction, and all the measurement marks My are moved stepwise along the X-axis at the same interval as the measurement mark My. Measure. Then, the amount of deviation from the design position of the mark in all shot areas is obtained and stored in a memory in the main controller (not shown).

  Next, the main control device, based on the deviation amount from the design position of the measurement marks Mx, My obtained as described above, the bending amount MX (Y) at the position Y of the reflecting surface 54X, and A bending amount MY (X) at the position X of the reflecting surface 54Y is calculated. That is, the amount of deviation of the measurement marks Mx and My from the design position changes according to the bending of the reflection surface, and therefore the amount of bending of the reflection surface is measured from the measurement results of the measurement marks Mx and My. Can do. The method for calculating the amount of bending is disclosed in detail in Japanese Patent Laid-Open No. 9-79829, and therefore the description thereof is omitted.

  In addition, it is good also as suppressing the influence of the error by the air fluctuation of the measured value of an interferometer, the measurement error of an alignment system, etc. by calculating the said bending amount in multiple times and averaging a calculation result.

  In the present embodiment, even when the mirror surface is slightly wavy due to the presence of the rib 21 during mirror surface processing, the portion corresponding to the rib 21 is considered to be an inflection point. By measuring the inflection point, it is possible to measure the bending of the reflecting surface using the measurement result of the inflection point, so it is possible to perform a more accurate bend measurement than when no inflection point is measured. Become.

In the exposure apparatus of the present embodiment, as in the prior art, the operation of projecting the pattern of the reticle R onto one shot area on the wafer W via the projection optical system PL under the illumination light IL, and the wafer stage WST The operation of moving the wafer W stepwise in the X-axis direction and the Y-axis direction is repeated in a step-and-repeat manner. In this case, the step movement is based on the measurement result of the wafer interferometer system 58 (interferometer units 58X ₁ , 58X ₂ , 58Y), and the stage drive system (X-axis linear motors 134X ₁ , 134X ₂ , Y-axis linear motor 134Y , X fine movement mechanism VX, Y fine movement mechanisms VY ₁ and VY ₂ , and a drive mechanism in its own weight canceller 150). In this case, the bending amount of the reflecting surface measured as described above is stored as an apparatus constant, and when moving wafer stage WST (wafer table WTB), wafer stage WST (wafer table WST) is used using the apparatus constant. By correcting the position of WTB), positioning of wafer stage WST and shot arrangement accuracy on the wafer can be improved. For example, even when exposure is performed using different exposure apparatuses, the overlay is performed. The accuracy can be improved.

  As described above in detail, according to the present embodiment, there is a predetermined relationship between the measurement pitch at the time of bending measurement of the mirror-like reflective surfaces 54X and 54Y provided on the wafer table WTB and the interval between the ribs 21 ( In the present embodiment, since the measurement pitch is set to ½ times the interval between the ribs 21, even if the shapes of the reflecting surfaces 54 </ b> X and 54 </ b> Y are affected by the contact of the ribs 21, the reflecting surface 54 </ b> X is used. , 54Y can be accurately measured. In other words, by setting the measurement pitch to ½ times the interval between the ribs 21 as in the present embodiment, the portion that is expected to become the turning point of the bending appearing on the surfaces of the reflection surfaces 54X and 54Y by the ribs 21 is always measured. Therefore, highly accurate bending measurement can be realized.

  In addition, according to the present embodiment, in consideration of the bending amount of the reflection surfaces 54X and 54Y of the wafer table WTB measured with high accuracy, the pattern formed on the reticle R is the wafer W placed on the wafer table WTB. Since the image is transferred to the top, it is possible to realize highly accurate pattern transfer.

  In the above embodiment, the bending of the reflecting surfaces 54X and 54Y is measured. However, the present invention is not limited to this, and other information is measured as long as the information is related to the shape of the reflecting surface. In any case, highly accurate measurement can be performed.

  In the above-described embodiment, the case where the interval between the ribs 21 is twice the measurement pitch when measuring the amount of bending of the reflecting surfaces 54X and 54Y has been described as the predetermined relationship, but the present invention is limited to this. What is necessary is just a natural number multiple of 2 or more. In this case, the interval between marks (measurement pitch) is preferably as narrow as possible, but the interval may be set according to the positioning accuracy required for wafer table WTB. In this embodiment, the measurement pitch and the interval between the two beams of the double path interferometer are the same, but the measurement pitch may be larger or smaller than the interval between the two beams.

  The predetermined relationship may be, for example, a relationship in which a portion corresponding to the rib 21 is always measured and a portion other than the portion corresponding to the rib 21 is appropriately measured.

  Note that, as in the above embodiment, each interferometer irradiates a length measurement beam almost simultaneously to a plurality of different positions (two in this embodiment) on the reflecting surface of wafer table WTB (for example, a double-pass interferometer is employed). In such a case, the interval between the plurality of positions (the interval between the two locations) and the interval between the ribs 21 may be set in a predetermined relationship. As a predetermined relationship in this case, the interval between the ribs 21 can be n times the interval between the plurality of positions (n is a natural number of 2 or more).

<< Second Embodiment >>
Next, a second embodiment of the present invention will be described with reference to FIG.

  The second embodiment has the same apparatus configuration except that the method of measuring the bending of the reflecting surface of the wafer table WTB is different from the first embodiment described above. Therefore, in the following, the bending measurement of the reflecting surface will be described in detail.

FIG. 7 is a diagram for explaining the principle of bending measurement of the reflecting surface 54Y. As shown in FIG. 7, in the second embodiment, two length measuring beams WY ₁ and WY ₃ are used that are arranged at a predetermined interval in the X-axis direction with respect to the reflecting surface 54Y. Yes. In the following description, it is assumed that the measurement value by the measurement beam WY ₁ is Yθ1, and the measurement value by the measurement beam WY ₃ is Yθ2.

As a premise, the measurement beams WY ₁ and WY ₃ of the interferometer 58Y actually measure the rotation amount of the reflecting surface with reference to the fixed mirror in the interferometer 58Y, but here, for the sake of simplicity of explanation. In addition, it is assumed that the inclination (the amount of rotation and the amount of bending) of the reflecting surface 54Y is detected with reference to a virtually fixed reference line RY. The distance between the reference line RY and the reflecting surface is assumed to be Ya, and the local bending angle of the reflecting surface 54Y at that distance is assumed to be θY (x). The interferometer 58Y measures the difference Yθ (x) between the distances Yθ1 and Yθ2 at two points separated by SY on the reference line in the X-axis direction. That is, interferometer 54Y outputs a value Yθ (x) determined by the following equation (1) to a main controller (not shown).

Yθ (x) = Yθ2−Yθ1 (1)
Here, since the bending angle θY (x) of the reflecting surface is a minute angle, the angle θY (x) can be approximated by the following equation (2).

θY (x) = Yθ (x) / SY (2)
On the other hand, the unevenness amount ΔY (x) of the reflecting surface at the position x of the reflecting surface is obtained by the following equation (3) with respect to the reference Ox of x.

なお、ステージをｘ方向にステップ移動する場合には、ヨーイングが同時に発生することから、このヨーイングによる計測誤差を上式（３）から差し引く必要がある。このため、Ｘ軸側の干渉計５８Ｘ₁，５８Ｘ₂それぞれの計測値を用いて、Ｘの基準点Ｏｘに対するウエハテーブルＷＴＢのヨーイング量Ｘθ（ｘ）を算出する。この場合、ウエハテーブルＷＴＢはＸ軸方向に一次元移動するだけなので、反射面５４Ｘに干渉計５８Ｘ₁，５８Ｘ₂それぞれの測長ビーム（ＷＸ₁、ＷＦＸ₁）が照射され続ける。

When the stage is moved stepwise in the x direction, yawing occurs simultaneously, so it is necessary to subtract the measurement error due to this yawing from the above equation (3). Therefore, the yaw amount Xθ (x) of wafer table WTB with respect to X reference point Ox is calculated using the measured values of interferometers 58X ₁ and 58X ₂ on the X axis side. In this case, since wafer table WTB only moves one-dimensionally in the X-axis direction, the length measurement beams (WX ₁ , WFX ₁ ) of interferometers 58X ₁ and 58X ₂ continue to be applied to reflecting surface 54X.

Therefore, the wafer table WTB is moved in the X-axis direction, the interferometers 58X ₁ and 58X ₂ (measurement beams WX ₁ and WFX ₁ ) are read at the same time, and the correction calculation as in the following equation (4) is performed to perform reflection. Find the true bend amount of the surface.

以上の測定を、ウエハステージＷＳＴ（ウエハテーブルＷＴＢ）をＸ軸方向にステップ移動させながら複数点（複数Ｘ位置）において行う。ここで、本実施形態では、Ｘ位置として、前述したリブ２１に対応する点を含むように、ステップ距離を決定する。すなわち、本実施形態においては、リブ２１に接触している位置に対応する点と、該対応する点の各中点とをサンプル点とする。すなわち、ステップ距離がリブ２１の格子間隔の１／２倍に設定されていることとなる（換言すると、リブ２１の格子間隔を曲がり量計測時のステップ距離の２倍となるようにウエハテーブルＷＴＢを製造している）。

The above measurement is performed at a plurality of points (a plurality of X positions) while stepping wafer stage WST (wafer table WTB) in the X-axis direction. Here, in this embodiment, the step distance is determined so as to include the point corresponding to the rib 21 described above as the X position. That is, in the present embodiment, a point corresponding to a position in contact with the rib 21 and each midpoint of the corresponding point are set as sample points. That is, the step distance is set to ½ times the lattice spacing of ribs 21 (in other words, wafer table WTB so that the lattice spacing of ribs 21 is twice the step distance at the time of bending amount measurement). Manufacturing).

On the other hand, measurement is similarly performed on the X-side reflection surface 54X. That is, measurement is performed using interferometers 58X ₁ and 58X ₂ while fixing wafer table WTB at a predetermined position in the X-axis direction and step-moving in the Y-axis direction.

  In this case, measurement using the following equation (5) is performed in the same manner as the above-described equation (4).

なお、上記式（４）、（５）では、区間０〜ｘ、０〜ｙとしているが、実際には上述したように、リブ２１の格子間隔の１／２の距離毎（サンプル点毎）に積分を行えば良い。すなわち、ステップ距離をΔＬとすると、Ｘ軸方向での積分区間はｎを１以上の整数として、（ｎ−１）・ΔＬ〜ｎ・ΔＬの範囲で積分して、ｎ→ｎ＋１と順次シフトしていく。これにより、主制御装置のメモリには、ΔＬ毎に対応して曲がり量のデータテーブルとして記憶される。

In the above formulas (4) and (5), the intervals 0 to x and 0 to y are used. However, as described above, in actuality, every half of the lattice spacing of the ribs 21 (each sample point). Integrate into. That is, if the step distance is ΔL, the integration interval in the X-axis direction is integrated in the range of (n−1) · ΔL to n · ΔL, where n is an integer of 1 or more, and sequentially shifted from n → n + 1. To go. As a result, the memory of the main control device stores the data table of the bending amount corresponding to each ΔL.

  Also in the second embodiment, a data table of the amount of bending of the reflecting surface measured as described above is stored as an apparatus constant, and the apparatus constant is stored when the wafer stage WST (wafer table WTB) is moved. By using this to correct the position of wafer stage WST (wafer table WTB), the positioning of wafer stage WST and the accuracy of shot arrangement on the wafer can be improved. For example, when exposure is performed using different exposure apparatuses. Even so, it is possible to improve the overlay accuracy.

  As described above, according to the second embodiment, as in the first embodiment, the measurement pitch at the time of bending measurement of the mirror-like reflecting surfaces 54X and 54Y provided on the wafer table WTB (the above step). This corresponds to the distance, and when the length measurement beam is irradiated on the reflection surfaces 54X and 54Y every step movement, the interval between the irradiation positions of the length measurement beams irradiated on the reflection surface before and after the step) And the interval between the ribs 21 are set to have a predetermined relationship (in this embodiment, the measurement pitch is ½ times the interval between the ribs 21). Even if it is affected, it is possible to accurately measure the amount of bending of the reflecting surfaces 54X and 54Y. In other words, by setting the measurement pitch to ½ times the interval between the ribs 21 as in the present embodiment, the portion that is expected to become the turning point of the bending appearing on the surfaces of the reflection surfaces 54X and 54Y by the ribs 21 is always measured. Therefore, highly accurate bending measurement can be realized.

  Further, in the second embodiment, in consideration of the amount of bending of the reflection surfaces 54X and 54Y of the wafer table WTB measured with high accuracy, the pattern formed on the reticle is placed on the wafer table WTB. Since the image is transferred to the top, it is possible to realize highly accurate pattern transfer.

  In the second embodiment, not only when the bending of the reflecting surfaces 54X and 54Y is measured, but other information may be measured as long as the information is related to the shape of the reflecting surface. In this case, it is possible to perform highly accurate measurement.

  In the second embodiment, the case where the interval between the ribs 21 is twice the measurement pitch when measuring the amount of bending of the reflecting surfaces 54X and 54Y has been described as the predetermined relationship. It is not limited to this, and it may be a natural number multiple of 2 or more. In this case, the interval between marks (measurement pitch) is preferably as narrow as possible, but the interval may be set according to the positioning accuracy required for wafer table WTB. In this embodiment, the measurement pitch and the interval between the two beams of the double path interferometer are the same, but the measurement pitch may be larger or smaller than the interval between the two beams.

  Also in the second embodiment, as the predetermined relationship, for example, a portion corresponding to the rib 21 is always measured, and a portion other than the portion corresponding to the rib 21 is appropriately measured. Also good.

  Note that, as in the second embodiment, each interferometer irradiates a length measuring beam almost simultaneously to a plurality of different positions (two in this embodiment) on the reflecting surface of wafer table WTB (for example, double-pass interference). In the case of adopting a meter, the interval between the plurality of positions (the interval between the two locations) and the interval between the ribs 21 may be set in a predetermined relationship. As a predetermined relationship in this case, the interval between the ribs 21 can be n times the interval between the plurality of positions (n is a natural number of 2 or more).

  In each of the above embodiments, the case where the present invention is applied to the measurement of the bending of the reflecting surface for measuring the position of the wafer table WTB has been described. The present invention can be applied to measurement of information related to the shape of the reflecting surface of the object to be measured other than the wafer table WTB provided with the section.

In each of the above embodiments, the far-infrared light such as KrF excimer laser light as the illumination light IL, the vacuum ultraviolet light such as F ₂ laser and ArF excimer laser, or the ultraviolet bright line (g-line) from the ultra-high pressure mercury lamp. However, the present invention is not limited to this, and other vacuum ultraviolet light such as Ar ₂ laser light (wavelength 126 nm) may be used. Further, for example, not only laser light output from each of the above light sources as vacuum ultraviolet light, but also single wavelength laser light in the infrared region or visible region oscillated from a DFB semiconductor laser or fiber laser, for example, erbium (Er) A harmonic that is amplified by a fiber amplifier doped with erbium and ytterbium (Yb) and wavelength-converted into ultraviolet light using a nonlinear optical crystal may be used.

  Further, an exposure apparatus that uses EUV light, X-rays, or charged particle beams such as an electron beam or an ion beam as illumination light IL, a projection system that does not use a projection optical system, such as a proximity type exposure apparatus, a mirror projection aligner, and The present invention may also be applied to an immersion type exposure apparatus disclosed in International Publication WO99 / 49504 and the like in which a liquid is filled between the projection optical system PL and the wafer.

  In addition, the present invention includes, for example, JP-A-10-163099, JP-A-10-214783 and the corresponding US Pat. No. 6,400,441, JP 2000-505958A, and the like. The present invention may be applied to a twin stage type exposure apparatus described in the corresponding US Pat. No. 5,969,441 and US Pat. No. 6,262,796.

  In addition, as disclosed in JP-A-11-135400, the present invention includes an exposure stage that can move while holding a substrate to be processed such as a wafer, and a measurement stage having various measurement members and sensors. The present invention can also be applied to other exposure apparatuses.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate, or a predetermined reflecting pattern is formed on a light-reflecting substrate. Although the formed light reflection type mask is used, it is not limited to them. For example, instead of such a mask, an electronic mask (which is a kind of optical system) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used. Such an electronic mask is disclosed, for example, in US Pat. No. 6,778,257. Note that the above-described electronic mask is a concept including both a non-light-emitting image display element and a self-light-emitting image display element.

  Further, for example, the present invention can also be applied to an exposure apparatus that exposes a substrate with interference fringes caused by interference of a plurality of light beams, which is called two-beam interference exposure. Such an exposure method and exposure apparatus are disclosed in, for example, WO 01/35168.

  In each of the above-described embodiments, the case where the present invention is applied to the step-and-repeat reduction projection exposure apparatus has been described, but it is needless to say that the scope of the present invention is not limited to this. That is, the present invention can be suitably applied to a scanning exposure apparatus such as a step-and-scan method.

  An illumination optical system and projection optical system composed of a plurality of lenses are incorporated into the exposure apparatus body for optical adjustment, and a reticle stage and wafer stage made up of a number of mechanical parts are attached to the exposure apparatus body to provide wiring and piping. , And further performing general adjustment (electrical adjustment, operation check, etc.), the exposure apparatus of the above embodiment can be manufactured. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  The present invention is not limited to an exposure apparatus for manufacturing a semiconductor, but is used for manufacturing a display including a liquid crystal display element. An exposure apparatus for transferring a device pattern onto a glass plate and a device used for manufacturing a thin film magnetic head. The present invention can also be applied to an exposure apparatus that transfers a pattern onto a ceramic wafer, and an exposure apparatus that is used for manufacturing an imaging device (CCD or the like), micromachine, organic EL, DNA chip, and the like. Further, in order to manufacture reticles or masks used in not only microdevices such as semiconductor elements but also light exposure apparatuses, EUV exposure apparatuses, X-ray exposure apparatuses, electron beam exposure apparatuses, etc., glass substrates or silicon wafers, etc. The present invention can also be applied to an exposure apparatus that transfers a circuit pattern. Here, in an exposure apparatus using DUV (far ultraviolet) light, VUV (vacuum ultraviolet) light, or the like, a transmission type reticle is generally used. As a reticle substrate, quartz glass, fluorine-doped quartz glass, meteorite, Magnesium fluoride or quartz is used. Further, in a proximity type X-ray exposure apparatus or an electron beam exposure apparatus, a transmission mask (stencil mask, membrane mask) is used, and a silicon wafer or the like is used as a mask substrate.

  A semiconductor device includes a step of performing functional / performance design of a device, a step of manufacturing a reticle based on the design step, a step of manufacturing a wafer from a silicon material, and a reticle by the above-described method using the exposure apparatus of the above-described embodiment. This pattern is manufactured through a step of transferring the pattern to a wafer, a device assembly step (including a dicing process, a bonding process, and a packaging process), an inspection step, and the like.

  As described above, the measuring apparatus and the measuring method of the present invention are suitable for measuring information related to the position of the object to be measured by irradiating the length measuring beam to the reflecting portion provided on the object to be measured. The stage apparatus of the present invention is suitable for moving a table. The exposure apparatus and exposure method of the present invention are suitable for forming a pattern on the substrate by irradiating the substrate with an energy beam.

It is the schematic which shows the exposure apparatus which concerns on 1st Embodiment. It is a top view of the stage apparatus of FIG. It is a perspective view which shows the state which looked at the wafer table from the back surface side. It is a figure for demonstrating the structure of the interferometer which concerns on 1st Embodiment. It is a top view which shows the state in which the reference wafer was mounted on the wafer table. It is a figure which shows the relationship between the measurement mark formed on the reference | standard wafer, and the rib which comprises a wafer table. It is a figure for demonstrating the principle of the bending measurement of the reflective surface which concerns on 2nd Embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Exposure apparatus, 21 ... Rib, 27A, 27B ... Side wall (first member), 54X, 54Y ... Reflecting surface, 110A ... Member (second member), Mx, My ... Measurement mark (evaluation mark), R ... reticle (mask), W ... wafer (substrate), WTB ... wafer table (object to be measured).

Claims (18)

A measuring device that measures information related to the position of the object to be measured by irradiating a length measuring beam to a reflecting portion provided on the object to be measured,
The reflection portion includes a first member having a mirror-like reflection surface, and a second member having a plurality of ribs that contact the first member on the back surface side of the reflection surface,
A measurement device, wherein a measurement pitch for measuring information related to the shape of the reflecting surface and a distance between the ribs are set in a predetermined relationship.   The measuring apparatus according to claim 1, wherein the information related to the shape of the reflecting surface is a curve of the reflecting surface.   The predetermined relationship is a relationship in which the interval between the ribs is n times (n is a natural number of 2 or more) a measurement pitch when measuring information related to the shape of the reflecting surface. 2. The measuring device according to 2.   The measurement pitch is equal to a step movement distance in which the reflection unit moves in a direction intersecting an incident direction of the length measuring beam when measuring information on the shape of the reflection surface. The measuring apparatus as described in any one of 1-3. A stage apparatus comprising the measurement apparatus according to any one of claims 1 to 4,
A table provided with the reflecting portion;
A stage device comprising: a driving device for moving the table;   The stage apparatus according to claim 5, wherein the measurement pitch has a relationship equal to an interval between a plurality of evaluation marks provided on the table. A measuring device that measures information on the position of the object to be measured by irradiating a plurality of different positions on a reflecting part provided on the object to be measured with a measurement beam,
The reflection portion includes a first member having a mirror-like reflection surface irradiated with the length measurement beam;
A second member having a plurality of ribs in contact with the first member on the back surface side of the reflecting surface;
The measuring apparatus, wherein an interval between the plurality of positions irradiated with the length measuring beam and an interval between the ribs are set in a predetermined relationship. A stage device comprising the measuring device according to claim 7,
A table provided with the reflecting portion;
A stage device comprising: a driving device for moving the table; The second member has a plurality of lattice ribs and is provided on the back side of the table.
The stage apparatus according to claim 5, wherein the reflecting portion forms at least a part of a side wall of the table. A reflection part, which is provided on the object to be measured and includes a first member having a mirror-like reflection surface, and a second member having a plurality of ribs contacting the first member on the back surface side of the reflection surface, is measured. A measuring method for measuring information on the shape of the reflecting portion using a measuring device that measures information on the position of the object to be measured by irradiating a long beam,
A measurement method, wherein a measurement pitch for measuring information related to the shape of the reflecting surface using the measurement device is set to a predetermined relationship with respect to the interval between the ribs.   The measurement method according to claim 10, wherein the information related to the shape of the reflection surface is a curve of the reflection surface.   11. The predetermined relationship is a relationship in which the interval between the ribs is n times (n is a natural number of 2 or more) a measurement pitch when measuring information on the shape of the reflecting surface. 11. The measuring method according to 11. The reflecting portion is provided on a movable table,
Providing a mark for evaluation in a known arrangement at a position corresponding to the measurement pitch on the table;
Based on the measurement value of the measuring device, while moving the table in a horizontal plane, sequentially detect the coordinates of the evaluation mark, based on the detected coordinates and the known arrangement of the evaluation mark, The method for detecting according to claim 10 including the step of detecting information about the shape of said reflective surface. When detecting information related to the shape of the reflection part, the measurement object is irradiated with a measurement beam by the measurement device while stepping the measurement object in a uniaxial direction at the measurement pitch. Obtaining information about the position;
The measurement method according to claim 10, further comprising: calculating information related to the shape of the reflection part based on information related to the position of the object to be measured. Using the measurement method according to any one of claims 10 to 14 to measure information relating to the shape of the reflective portion;
Forming a pattern on the substrate while moving the substrate together with the object to be measured. A reflection part, which is provided on the object to be measured and includes a first member having a mirror-like reflection surface, and a second member having a plurality of ribs contacting the first member on the back surface side of the reflection surface, is measured. A measurement method for measuring information on the position of the object to be measured by irradiating a long beam,
A measurement method characterized by irradiating a plurality of different positions on the reflecting portion with the length measurement beam, and setting a distance between the plurality of positions and a distance between the ribs to a predetermined relationship.   An exposure method for placing a substrate on the object to be measured and forming a pattern on the substrate while measuring the position of the substrate using the measurement method according to claim 16. An exposure apparatus that irradiates a substrate with an energy beam to form a pattern on the substrate,
An exposure apparatus, wherein the stage apparatus according to any one of claims 5, 6, 8, and 9 holds the substrate.

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