JP2007059787A - Adhesive film for semiconductor and semiconductor device using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film for bonding semiconductor where a semiconductor element and a supporting member, such as an organic substrate, for mounting a semiconductor element are bonded at low temperature, and a circuit step can be filled. <P>SOLUTION: The film for bonding a semiconductor contains a thermoplastic resin (A), an epoxy resin (B), and a liquid phenol compound (C). The epoxy resin (B) is substantially a solid epoxy resin. Preferably, the liquid phenol compound (C) contains an allyl group. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an adhesive film for a semiconductor and a semiconductor device using the same.

In recent years, there has been an increasing demand for higher density and higher integration of semiconductor devices in response to higher functions of electronic devices, and semiconductor packages have been increasing in capacity and density.
In order to meet such requirements, for example, a lead-on-chip (LOC) structure in which a lead is bonded onto a semiconductor element is employed.

  However, since the semiconductor element and the lead frame are bonded in the LOC structure, the bonding reliability at the bonded portion greatly affects the reliability of the semiconductor package.

Conventionally, a paste-like adhesive has been used for bonding a semiconductor element and a lead frame.
However, it is difficult to apply an appropriate amount of paste adhesive, and the adhesive sometimes protrudes from the semiconductor element.

  For example, in the LOC structure, a film adhesive in which an adhesive is applied to a heat resistant substrate such as a hot-melt adhesive film using a polyimide resin has been used (for example, see Patent Document 1).

  However, since the hot-melt adhesive film needs to be bonded at a high temperature, it may cause thermal damage to a high-density semiconductor element and lead frame.

  Particularly in recent semiconductor packages, the chip is stacked in multiple stages on the chip, thereby realizing a reduction in size, thickness and capacity of the package. In such packages, the use of organic substrates such as bismaleimide-triazine substrates and polyimide substrates instead of lead frames is increasing. With the increase in organic substrates, package cracking due to moisture absorption inside the package during infrared reflow for soldering the package has become a technical problem, and it has been found that the contribution of the semiconductor element adhesive is particularly significant.

However, the organic substrate has poor heat resistance compared to the lead frame, and further with the thinning of the package, the thinning of the chip has progressed, and the warping of the chip becomes significant at the past high temperature application temperature, There is an increasing demand for a film adhesive that can be thermocompression bonded at a lower temperature than ever before. As such a film adhesive, a hot melt type adhesive film made of a mixture of a thermoplastic resin and a thermosetting resin is used.
JP-A-6-264035 JP 2000-104040 A JP 2002-121530 A Patent 3562465 JP 2002-256235 A

However, the prior art described in the above literature has room for improvement in the following points.
First, in Patent Documents 2 and 3, a polyimide resin is used as a thermoplastic resin and an epoxy resin is used as a thermosetting resin. Such an adhesive film is excellent in heat resistance and reliability, Because the melt viscosity decreases for the first time in the state and the minimum melt viscosity is high, the wettability at low temperature is insufficient, making it difficult to apply at low temperature, and the chip is thin and stacked in multiple layers It had the problem that it was difficult to apply.
Secondly, in Patent Documents 4 and 5, a resin mainly composed of acrylic rubber is used as a thermoplastic resin having a low glass transition temperature in order to improve wettability at a low temperature, but the molecular weight of the thermoplastic resin is used. When the viscosity of the thermosetting component contained is high and the viscosity at high temperature is high, the fluidity of the film adhesive is poor and the gap between the circuit provided on the organic substrate cannot be filled, and at high temperatures Peeling easily occurs.
Thirdly, a method of increasing the content of the low molecular weight thermosetting component is also conceivable. However, the film adhesive becomes less flexible, and when the film adhesive is cut, the film adhesive cracks. Likely to happen.
The present invention has been made in view of the above circumstances, and its purpose is to bond a semiconductor element and a support member for mounting a semiconductor element such as a lead frame or an organic substrate, thereby achieving low-temperature adhesion and workability. The object is to provide an excellent adhesive film for a semiconductor.

The adhesive film for semiconductor of the present invention is a film for semiconductor adhesion containing (A) a thermoplastic resin, (B) an epoxy resin, and (C) a liquid phenol compound, wherein (B) is a substantially solid epoxy resin. It is the film for semiconductor adhesion comprised by these.
The adhesive film for a semiconductor of the present invention is added with a liquid phenol compound while adding a solid epoxy resin. For this reason, while maintaining the melt viscosity at low temperature low, the brittleness of the film adhesive is reduced, and the workability is excellent.

  According to the present invention, a semiconductor element and a support member for mounting a semiconductor element such as a lead frame and an organic substrate can be bonded, and low temperature adhesion and workability, particularly workability when a film is transported by a transport roll. An excellent adhesive film for a semiconductor can be provided.

Hereinafter, the adhesive film for semiconductor of the present invention will be described.
The adhesive film for a semiconductor of the present invention includes (A) a thermoplastic resin, (B) an epoxy resin, and (C) a liquid phenol compound, and the (B) epoxy resin is substantially a solid epoxy resin, and ( C) A film for semiconductor adhesion composed of a liquid phenol compound containing a liquid polyphenol represented by Chemical Formula 1.
Hereinafter, each component of the adhesive film for a semiconductor of the present invention will be described.

The (A) thermoplastic resin used in the present invention means a polymer resin having thermoplasticity and a linear chemical structure. Specific examples include polyimide resins such as polyimide resins and polyetherimide resins, polyamide resins such as polyamide resins and polyamideimide resins, and acrylic resins such as acrylic ester copolymers.
Among these, acrylic resins are preferable. Since the acrylic resin has a low glass transition temperature, the initial adhesion can be improved. Here, the initial adhesion refers to adhesion in an initial stage when the semiconductor element and the support member are bonded with the semiconductor adhesive film, that is, adhesion before the semiconductor adhesive film is cured.

The acrylic resin means a resin having acrylic acid and its derivatives as main monomers. Specifically, polymers such as acrylic acid, methacrylic acid, methyl acrylate, ethyl acrylate, etc., methacrylates such as methyl methacrylate, ethyl methacrylate, acrylonitrile, acrylamide, and other monomers And the like.
In the present invention, an acrylic resin (particularly an acrylic ester copolymer) having a compound having an epoxy group, a hydroxyl group, a carboxyl group, a nitrile group or the like is preferable. Thereby, the adhesiveness to adherends, such as a semiconductor element, can be improved more. Specific examples of the compound having a functional group include glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxy methacrylate having a carboxyl group, and acrylonitrile having a nitrile group. Among these, an acrylate copolymer containing a compound having a nitrile group is particularly preferable. Thereby, the adhesiveness to a to-be-adhered body can be improved especially.

  The content of the compound having a functional group is not particularly limited, but is preferably 0.5% by weight or more and 40% by weight or less, and particularly preferably 5% by weight or more and 30% by weight or less of the entire acrylic resin. When the content is 0.5% by weight or more, the effect of improving the adhesion is enhanced, and when it is 40% by weight or less, the adhesive force can be suppressed, so that the effect of improving workability is enhanced.

  (A) Although the weight average molecular weight of a thermoplastic resin, especially acrylic resin is not specifically limited, 100,000 or more are preferable and 150,000-1 million are especially preferable. When the weight average molecular weight is within this range, the film forming property of the adhesive film for a semiconductor can be improved. Further, when the weight average molecular weight is within this range, even when the thermoplastic resin contains a thermosetting functional group, the resin alone hardly exhibits the curing behavior by heat treatment.

  (A) Although the glass transition temperature of a thermoplastic resin is not specifically limited, -20 degreeC or more and 60 degrees C or less are preferable, and -10 degreeC or more and 50 degrees C or less are especially preferable. Since the adhesive force of the adhesive film for a semiconductor can be suppressed when the glass transition temperature is −20 ° C. or higher, the effect of improving workability is enhanced. When the glass transition temperature is 60 ° C. or lower, the low-temperature adhesiveness can be improved.

  The content of (A) thermoplastic resin is not particularly limited, but (A) thermoplastic resin a part by weight, (B) epoxy resin b part by weight, (C) liquid phenol compound c part by weight, and (D) solid phenol In the case of the resin d parts by weight, 0.1 ≦ a / (a + b + c + d) ≦ 0.5 is preferable, more preferably 0.15 ≦ a / (a + b + c + d) ≦ 0.4, and 0.2 ≦ a / (A + b + c + d) ≦ 0.3 is particularly preferable. When it is 0.1 or more, the film formability of the resin composition is improved, and the toughness of the adhesive film for a semiconductor is improved. When it is 0.5 or less, the fluidity at the time of application of the film adhesive is improved, and the film adhesive can be filled in the circuit level difference of the organic substrate when thermocompression bonding is performed.

  The (B) epoxy resin used in the present invention refers to any of a monomer, an oligomer and a polymer. For example, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, hydrogenated bisphenol A type epoxy resin, aliphatic type epoxy resin, stilbene type epoxy resin, orthocresol novolak type epoxy resin, phenol novolak type epoxy resin, Modified phenol type epoxy resin, triphenol methane type epoxy resin, alkyl modified triphenol methane type epoxy resin, triazine nucleus-containing epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, dicyclopentadiene modified phenol type epoxy resin, glycidyl Examples include amine type epoxy resins, bisphenol A novolac type epoxy resins, brominated phenol novolac type epoxy resins, and naphthol type epoxy resins. .

  The content of the epoxy resin is preferably 10 to 100 parts by weight, particularly preferably 20 to 50 parts by weight, with respect to 10 parts by weight of the thermoplastic resin. When the content is equal to or higher than the lower limit value, the fluidity at the time of pasting is improved, and when the content is equal to or lower than the upper limit value, the toughness of the adhesive film for a semiconductor can be improved.

Furthermore, when the total weight of the epoxy resin (B), the liquid phenol compound (C), and the solid phenol resin (D) is 100 parts by weight, the epoxy resin is 20 parts by weight or more and 80 parts by weight or less, preferably 40 parts by weight or more. It is preferable to contain 70 parts by weight or less. When the content is equal to or higher than the lower limit value, the fluidity is improved during thermocompression bonding, and it becomes possible to fill a gap between the circuit and the circuit provided on the organic substrate. The toughness of the adhesive film for a semiconductor improves that it is below the upper limit value, and film cracking during film cutting can be suppressed. Here, it is more preferable that (B) two or more epoxy resins having different softening points are used in combination, since both the pastability and the toughness of the film can be achieved.

The (C) liquid phenol compound used in the present invention serves as a curing agent for an epoxy resin, and refers to a liquid phenol compound having a viscosity of 30 Pa · s (30,000 cps) or less at 25 ° C. Preferably, the viscosity is 10 Pa · s (10,000 cps) or less at 25 ° C. The viscosity can be controlled by the number of nuclei n and the type of benzene ring substituent.

  Specific examples of the (C) liquid phenol compound used in the present invention include bis (mono- or di-t-butylphenol) propane, methylenebis (2-propenyl) phenol, propylenebis (2-propenyl) phenol, bis [(2 -Propenyloxy) phenyl] methane, bis [(2-propenyloxy) phenyl] propane, 4,4 '-(1-methylethylidene) bis [2- (2-propenyl) phenol], 4,4'-( 1-methylethylidene) bis [2- (1-phenylethyl) phenol], 4,4 ′-(1-methylethylidene) bis [2-methyl-6-hydroxymethylphenol], 4,4 ′-(1-methyl Ethylidene) bis [2-methyl-6- (2-propenyl) phenol], 4,4 ′-(1-methyltetradecylidene) bisphenol.

  The amount of (C) the liquid phenol compound added to the total epoxy resin is preferably such that the ratio of the epoxy equivalent of the (B) epoxy resin to the hydroxyl equivalent of the (C) liquid phenol compound is 0.5 to 1.5, particularly 0. 7 or more and 1.3 or less are preferable. When the equivalent ratio is not less than the lower limit, the heat resistance of the adhesive film for semiconductor is improved, and when it is not more than the upper limit, the storage stability of the adhesive film for semiconductor is improved.

（式中、ｐ、ｑ、ｒは１〜３の整数を表す。Ｒ¹、Ｒ²、Ｒ³はアリル基を表す。） The (C) liquid phenol compound used in the present invention is preferably represented by the formula (1). The compound represented by the formula (1) is a product obtained by polycondensation of allylphenol with formaldehyde, and a preferred specific example is a polycondensate of 2- (2-propenyl) phenol.

(In the formula, p, q and r represent an integer of ^{1 to 3.} R ¹ , R ² and R ³ represent an allyl group.)

  It is also possible to add (D) a solid phenol resin in addition to the (C) liquid phenol compound of the present invention as long as the effects of the present invention are not impaired. (D) The solid phenol resin refers to all monomers, oligomers, and polymers having at least two phenolic hydroxyl groups capable of forming a crosslinked structure by curing reaction with the above epoxy resin. For example, phenol novolak resin Cresol novolac resin, phenol aralkyl (including phenylene and biphenylene skeleton) resin, naphthol aralkyl resin, triphenol methane resin, dicyclopentadiene type phenol resin and the like. These may be used alone or in combination.

  The content of the phenol resin is not particularly limited, but the ratio of the epoxy equivalent of the (B) epoxy resin to the hydroxyl equivalent of the (C) liquid phenol compound and (D) phenol resin is 0.5 to 1.5. The following is preferable, and 0.7 to 1.3 is particularly preferable. When the equivalent ratio is not less than the lower limit, the heat resistance of the adhesive film for semiconductor is improved, and when it is not more than the upper limit, the storage stability of the adhesive film for semiconductor is improved.

  In order to accelerate the curing reaction, the resin composition may contain (E) a curing accelerator as necessary. Specific examples of the curing accelerator include amine catalysts such as imidazoles, 1,8-diazabicyclo (5,4,0) undecene, and phosphorus catalysts such as triphenylphosphine.

  The film adhesive layer of the present invention can further contain a coupling agent as required. Thereby, the adhesiveness of resin, a to-be-adhered body, and resin can be improved.

  Examples of coupling agents include silane-based, titanium-based, and aluminum-based, among which silane-based coupling agents are preferable. As the coupling agent, for example, vinyltrichlorosilane, vinyltrimethoxysilane, vinyltriethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyl Methyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, N-β (Aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ Aminopropyltrimethoxysilane, .gamma.-chloropropyl trimethoxy silane, .gamma.-mercaptopropyltrimethoxysilane, 3-isocyanate propyl triethoxysilane, 3-acryloxypropyl and propyl trimethoxy silane.

Although the compounding quantity of the said coupling agent is not specifically limited, 0.01-10 weight part is preferable with respect to 100 weight part of said acrylate ester copolymers, and 0.1-10 weight part is especially preferable. When the blending amount is equal to or higher than the lower limit value, the effect of improving the adhesion is enhanced, and when it is equal to or lower than the upper limit value, generation of outgas and voids can be suppressed.

The resin composition may contain an organic compound having a cyanate group as another component, if necessary. Thereby, the adhesiveness to a to-be-adhered body and heat resistance can be improved more.
Examples of the organic compound having a cyanate group include bisphenol A dicyanate, bisphenol F dicyanate, bis (4-cyanate phenyl) ether, bisphenol E dicyanate, and cyanate novolac resin.

The adhesive film for semiconductors of the present invention is prepared by, for example, dissolving the resin composition in a solvent such as methyl ethyl ketone, acetone, toluene, dimethylformaldehyde, etc. to make a varnish, and then using a comma coater, die coater, gravure coater, etc. It can be obtained by coating the release sheet, drying it, and then removing the release sheet.
Although the thickness of the said adhesive film for semiconductors is not specifically limited, 3 micrometers or more and 100 micrometers or less are preferable, and 5 micrometers or more and 70 micrometers or less are especially preferable. When the thickness is within the above range, it is particularly easy to control the thickness accuracy.

First, the Example and comparative example of the adhesive film for semiconductors are demonstrated.
Example 1
(1) Preparation of Adhesive Film Resin Varnish for Semiconductor Acrylic ester copolymer (butyl acrylate-acrylonitrile-ethyl acrylate-glycidyl methacrylate copolymer, manufactured by Nagase ChemteX Corporation, SG-80 HDR as thermoplastic resin (A) , Tg: 10 ° C., weight average molecular weight: 350,000) and curable resin as epoxy resin (EOCN-1020-80 (orthocresol novolac type epoxy resin), epoxy equivalent 200 g / eq, Nippon Kayaku ( 97 parts by weight), NC6000 (epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.) 146 parts by weight, liquid phenol compound (MEH-8000H, hydroxyl group equivalent 141 g / OH group, manufactured by Meiwa Kasei Co., Ltd.) ) 110 parts by weight, solid phenol resin (PR-HF-3, Hydroxyl equivalent 104 g / OH group, Sumitomo Bakelite Co., Ltd. 47 parts by weight, curing accelerator (E) imidazole compound (2P4MHZ-PW, Shikoku Kasei Co., Ltd.) 0.75 parts by weight, coupling agent γ -Glycidoxypropyltrimethoxysilane (KBM403, manufactured by Shin-Etsu Chemical Co., Ltd.) 1.3 parts by weight was dissolved in methyl ethyl ketone (MEK) to obtain a resin varnish having a resin solid content of 37%.

(2) Manufacture of adhesive film for semiconductor Using a comma coater, the above-mentioned resin varnish is converted into a polyethylene terephthalate film (Mitsubishi Chemical Polyester Film Co., Ltd., product number MRX50, thickness 50 μm) as the base film (I). After coating, the film was dried at 90 ° C. for 5 minutes to obtain an adhesive film for semiconductor having a thickness of 25 μm.

(Example with DDF configuration)
(3) Production of base film (II) and pressure-sensitive adhesive layer Clear Tech CT-H717 (manufactured by Kuraray Co., Ltd.) consisting of 60 parts by weight of Hibra and 40 parts by weight of polypropylene was used as the base film (II) with a thickness of 100 μm. A film was formed and the surface was corona treated. Next, a copolymer having a weight average molecular weight of 500,000 obtained by copolymerizing 50 parts by weight of 2-ethylhexyl acrylate, 10 parts by weight of butyl acrylate, 37 parts by weight of vinyl acetate, and 3 parts by weight of 2-hydroxyethyl methacrylate. Was applied to a polyester film having a thickness of 38 μm, and the thickness after drying was 10 μm, followed by drying at 80 ° C. for 5 minutes to obtain a pressure-sensitive adhesive layer. Thereafter, the pressure-sensitive adhesive layer was laminated on the corona-treated surface of the base film (II) to obtain a base film (II) and a pressure-sensitive adhesive layer.

(4) Manufacture of a die attach film with a dicing sheet function with a dicing sheet function A protective film is attached to the above-mentioned film adhesive layer with the base film (I), and the base film (I) and the film adhesive layer are attached. Half-cut, affixed to the pressure-sensitive adhesive layer on the above-mentioned base film (II), and peeled off the protective film, whereby the base film (II), the pressure-sensitive adhesive layer, the base film (I) and the film adhesive A die attach film with a dicing sheet function in which layers were formed in this order was obtained.

(5) Manufacturing of Semiconductor Device The die attach film with a dicing function obtained in Examples and Comparative Examples was attached to the back surface of a 5-inch 200 μm wafer at 60 ° C. to obtain a wafer with a die attach film with a dicing function. After that, the wafer with a die attach film with a dicing function is diced (cut) into a size of a semiconductor element of 5 mm × 5 mm square at a spindle rotation speed of 30,000 rpm and a cutting speed of 50 mm / sec using a dicing saw, and then diced. A semiconductor element, which is pushed up from the back surface of the dicing sheet with a sheet function and peeled between the base film (II) and the film adhesive layer and bonded to the die attach film, is attached to a bismaleimide-triazine resin substrate at 130 ° C., 5 N, 1. Bonded for 0 seconds, die bonded, heat treated at 120 ° C. for 1 hour, and further at 180 ° C. for 1 hour to cure the semiconductor adhesive film, then sealed with resin, heat treated at 175 ° C. for 2 hours, and sealed The resin was cured to obtain 10 semiconductor devices.

  The details of the evaluation test of the adhesive film for semiconductor of the present invention will be described below.

(Low temperature adhesion (initial adhesion))
The low-temperature adhesiveness was obtained by bonding a semiconductor adhesive film obtained on a semiconductor element (organic substrate) under conditions of 130 ° C., 5 N, and 1 second, and then measuring die shear strength.
The die shear strength was measured using a push-pull gauge. Each code is as follows.
◎: Die shear strength is 3.0 MPa or more ○: Die shear strength is 2.0 MPa or more and less than 3.0 M △: Die shear strength is 1.0 MPa or more and less than 2.0 MPa ×: Die shear strength is less than 1.0 MPa

(180 degree bending test)
As for the brittleness of the film, the adhesive film for semiconductor was peeled from the substrate, subjected to a 180-degree bending test, and the number of times until the adhesive film for semiconductor was broken was evaluated. Each code is as follows.
◎: The number of foldable times is 50 times or more. ○: The number of foldable times is 25 times or more and less than 50 times. △: The number of foldable times is 1 time or more and less than 25 times.

(Circuit fillability)
Circuit fillability is achieved by bonding a semiconductor adhesive film obtained on a semiconductor element (organic substrate) under conditions of 130 ° C., 5 N, and 1 second, and using a scanning ultrasonic flaw detector (SAT). The rate with which the adhesive film for semiconductors was filled was evaluated. Each code is as follows.
A: Filling rate is 100%
○: Filling rate is 80% or more and less than 100% Δ: Filling rate is 40% or more and less than 80% ×: Filling rate is less than 40%

Details of an evaluation test of a semiconductor device produced using the adhesive film for a semiconductor of the present invention will be described below.

(Adhesiveness after moisture absorption treatment)
The semiconductor device before resin sealing obtained in each example and comparative example was subjected to moisture absorption treatment at 85 ° C./85% RH / 168 hours, and then the shear strength at 260 ° C. between the semiconductor element and the organic substrate was evaluated.
◎: Shear strength is 1.0 MPa or more ○: Shear strength is 0.75 or more and less than 1.0 MPa △: Shear strength is 0.5 or more and less than 0.75 MPa ×: Shear strength is less than 0.5 MPa

(Crack resistance)
The crack resistance was determined by applying a moisture absorption treatment to the semiconductor devices obtained in each of the examples and comparative examples at 85 ° C./85% RH / 168 hours, and then performing an IR reflow at 260 ° C. three times to perform a scanning ultrasonic flaw detector (SAT). ). Each code is as follows.
A: Generated cracks 0 out of 10 O: Generated cracks 1 to 3 out of 10 Δ: Generated cracks 4 to 9 out of 10 ×: Generated cracks 10 out of 10

  Table 1 shows the physical properties of the semiconductor adhesive film obtained in Example 1, various evaluation results, and details of the evaluation results of the semiconductor device using the semiconductor adhesive film.

(Example 2)
As epoxy resin (B), EOCN-1020-80 (epoxy equivalent 200 g / eq, Nippon Kayaku Co., Ltd.) 99 parts by weight, NC6000 (epoxy equivalent 200 g / eq, Nippon Kayaku Co., Ltd.) 148 parts by weight As a liquid phenolic compound (C), 92 parts by weight of MEH-8000H (hydroxyl equivalent 141 g / OH group, manufactured by Meiwa Kasei Co., Ltd.) and as a solid phenolic resin (D) PR-HF-3 (hydroxyl equivalent 104 g / OH) The experiment was conducted in the same manner as in Example 1 except that 62 parts by weight of Sumitomo Bakelite Co., Ltd. was used. The formulation and experimental results are shown in Table 1.

(Example 3)
The experiment was performed in the same manner as in Example 1 except that 110 parts by weight of MEH-8000-4L (hydroxyl equivalent: 141 g / OH group, manufactured by Meiwa Kasei Co., Ltd.) was used as the liquid phenol compound (C). The formulation and experimental results are shown in Table 1.

Example 4
The experiment was performed in the same manner as in Example 1 except that 47 parts by weight of PR53647 (hydroxyl equivalent: 104 g / OH group, manufactured by Sumitomo Bakelite Co., Ltd.) was used as the solid phenol resin (D). The formulation and experimental results are shown in Table 1.

(Example 5)
As epoxy resin (B), EOCN-1020-80 (epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.) 200 parts by weight, as liquid phenol compound (C), MEH-8000H (hydroxyl equivalent 141 g / OH group, The experiment was performed in the same manner as in Example 1 except that 141 parts by weight of Meiwa Kasei Co., Ltd. was used. The formulation and experimental results are shown in Table 1.

(Example 6)
As epoxy resin (B), EOCN-1020-80 (epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.) 60 parts by weight, as liquid phenol compound (C), MEH-8000H (hydroxyl equivalent 141 g / OH group, The experiment was performed in the same manner as in Example 1 except that 42 parts by weight of Meiwa Kasei Co., Ltd. was used. The formulation and experimental results are shown in Table 1.

(Example 7)
As epoxy resin (B), 400 parts by weight of EOCN-1020-80 (epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.), as liquid phenol compound (C), MEH-8000H (hydroxyl equivalent 141 g / OH group, The experiment was performed in the same manner as in Example 1 except that 282 parts by weight of Meiwa Kasei Co., Ltd. was used. The formulation and experimental results are shown in Table 1.

Example 8 (Method of implementation in the form of DAF)
The surface of the semiconductor adhesive film prepared in Example 1 was laminated to the back surface of a 5-inch, 200 μm semiconductor wafer under the conditions of 60 ° C., 0.1 MPa, 50 mm / sec, and the semiconductor adhesive film surface was diced into a dicing film (Sumilite FSL-N4003). To Sumitomo Bakelite Co., Ltd.). Then, using a dicing saw, the semiconductor wafer bonded with the semiconductor adhesive film is diced (cut) into a semiconductor element size of 5 mm × 5 mm square at a spindle rotation speed of 30,000 rpm and a cutting speed of 50 mm / sec. A semiconductor element to which an adhesive film was bonded was obtained. Next, after irradiating ultraviolet rays with an integrated light amount of 250 mJ / cm ² in 20 seconds from the light transmissive substrate side of the dicing film, the dicing film bonded to the adhesive film for semiconductor was peeled off. Then, an organic substrate (circuit step 10 um) mainly composed of bismaleimide / triazine coated with a solder resist (manufactured by Taiyo Ink Co., Ltd., AUS308) on the semiconductor element bonded with the above-described semiconductor adhesive film is applied at 130 ° C. 5N, pressure bonding for 1.0 second, die bonding, heat treatment at 120 ° C. for 1 hour, and further at 180 ° C. for 1 hour to cure the semiconductor adhesive film, then seal with resin and heat treatment at 175 ° C. for 2 hours. Then, the sealing resin was cured to obtain a semiconductor device. It was confirmed that the obtained semiconductor device showed high reliability in various evaluation tests.

(Comparative Example 1)
The experiment was performed in the same manner as in Example 1 except that the epoxy resin (B), the liquid phenol compound (C), the solid phenol resin (D), and the curing accelerator (E) were not used. The formulation and experimental results are shown in Table 1.

(Comparative Example 2)
As epoxy resin (B), EOCN-1020-80 (epoxy equivalent 200 g / eq, manufactured by Nippon Kayaku Co., Ltd.) 200 parts by weight, as solid phenol resin (D), PR-HF-3 (hydroxyl equivalent 104 g / OH) The experiment was performed in the same manner as in Example 1 except that 104 parts by weight of Sumitomo Bakelite Co., Ltd.) was used and the liquid phenol compound (C) was not used. The formulation and experimental results are shown in Table 1.

(Comparative Example 3)
Polyimide resin as the thermoplastic resin (A) (1,3-bis (3-aminophenoxy) benzene (made by Mitsui Chemicals, Inc.) APB as the diamine component) 43.85 g (0.15 mol) and α, ω-bis (3-aminopropyl) polydimethylsiloxane (average molecular weight 837) (G9 manufactured by Fuso Chemical Co., Ltd.) 125.55 g (0.15 mol) and 4,4′-oxydiphthalic dianhydride (Manac ( ODPA-M), a polyimide resin obtained by synthesizing 93.07 g (0.30 mol), Tg: 70 ° C., weight average molecular weight 30,000) 100 parts by weight, and epoxy resin (B), EOCN-1020-80 (orthocresol novolac type epoxy resin), epoxy equivalent 200 g / eq, Nippon Kayaku Co., Ltd. 10 parts by weight, coupling agent (G As a solution, 5 parts by weight of N-phenyl-γ-aminopropyltrimethoxysilane (KBM573, manufactured by Shin-Etsu Chemical Co., Ltd.) is dissolved in N-methyl-2-pyrrolidone (NMP) to prepare a resin varnish having a resin solid content of 43%. This was applied to a polyethylene terephthalate film (Mitsubishi Chemical Polyester Film Co., Ltd., product number MRX-50, thickness 50 μm), which was a protective film, and then dried at 180 ° C. for 10 minutes for a semiconductor with a thickness of 25 μm. An adhesive film was prepared and evaluated using the adhesive film. The experimental results are shown in Table 1.

  As shown in Table 1, in Examples 1 to 7, both the adhesive film evaluation results and the semiconductor device evaluation results showed good results, but in Comparative Examples 1 to 3, all of these showed good results. There wasn't. Moreover, although the adhesive film physical properties of Examples 1-7 all satisfy the characteristics of Claim 7, none of the comparative examples, which are prior arts, satisfy the characteristics of Claim 7.

It is sectional drawing of the semiconductor device which shows an example of the semiconductor device of this invention typically.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Adhesive film for semiconductors 2 Semiconductor element 3 Support member for semiconductor mounting

Claims (7)

(A) thermoplastic resin,
(B) epoxy resin,
(C) a liquid phenol compound,
A semiconductor adhesive film comprising:
A film for semiconductor bonding, wherein (B) is composed of a substantially solid epoxy resin. The adhesive film for semiconductor according to claim 1, wherein the liquid phenolic compound (C) is represented by the formula (1).

(In the formula, p, q and r represent an integer of ^{1 to 3.} R ¹ , R ² and R ³ represent an allyl group.) Furthermore, the film for semiconductor adhesion of Claim 1 or 2 containing (D) solid phenol resin. The adhesive film for semiconductor according to any one of claims 1 to 3, wherein (A) the thermoplastic resin is an acrylate copolymer.   The adhesive film for semiconductor according to claim 1, further comprising (E) a curing accelerator. The semiconductor adhesive film according to claim 1, wherein the semiconductor adhesive film has a melt viscosity of 200 Pa · s or less at a temperature at which a semiconductor chip is attached to a substrate. A semiconductor device having a structure in which a semiconductor element and a member to be bonded are bonded using the adhesive film for a semiconductor according to claim 1.

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