JP2007040702A - Semiconductor ic, wireless ic tag and sensor - Google Patents

Semiconductor ic, wireless ic tag and sensor Download PDF

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JP2007040702A
JP2007040702A JP2005221660A JP2005221660A JP2007040702A JP 2007040702 A JP2007040702 A JP 2007040702A JP 2005221660 A JP2005221660 A JP 2005221660A JP 2005221660 A JP2005221660 A JP 2005221660A JP 2007040702 A JP2007040702 A JP 2007040702A
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integrated circuit
oscillation
sensor
temperature
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Shoichi Kokubo
正一 小久保
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Oki Electric Industry Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor IC, a wireless IC tag and a sensor which insures stable operation, can be compact/thin sized, and inhibits camouflage of sensor on temperature administration. <P>SOLUTION: To solve the problem, the semiconductor IC of this invention measures the temperature based on the variation of frequency from a oscillation circuit, wherein the capacitance of the oscillation circuit is a ferroelectric substance, therefore the oscillation frequency is characteristically varied based on the varying dielectric characteristics depending on the temperature variation of the ferroelectric substance. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体集積回路、無線タグ及びセンサに関し、例えば、物品等の温度を感知することができ、物品等に簡単に取り付けることができるＩＣカードやＩＣタグなどの無線タグ、半導体集積回路、及びセンサに適用し得る。   The present invention relates to a semiconductor integrated circuit, a wireless tag, and a sensor. For example, a wireless tag such as an IC card or an IC tag that can sense the temperature of an article or the like and can be easily attached to the article, a semiconductor integrated circuit, And applicable to sensors.

従来、温度センサは主にサーミスタが用いられていた。それ故、物流などで物品の温度管理をするために温度センサ付きの回路を物品に付与する際、温度履歴管理用に用いられるＩＣカード、ＩＣタグに、温度センサを内蔵することはできずに外付け部品となっていた。   Conventionally, a thermistor has been mainly used as a temperature sensor. Therefore, when a circuit with a temperature sensor is attached to an article to manage the temperature of the article in logistics, etc., the IC card and IC tag used for temperature history management cannot be built in. It was an external part.

図２は、サーミスタを温度センサとした場合の従来の回路構成例を示す。図２において、従来の回路は、集積回路内部に少なくとも、２系統のＣＲ発振回路１００、ＣＲ発振式アナログ−デジタル回路２００を有し、集積回路の端子に、基準抵抗３１１、発振用コンデンサ３１２、サーミスタ３１３及び抵抗３１４が接続されている。そして、ＣＲ発振回路１００が、接続する部品の温度による抵抗あるいは容量の変化によって変動するＣＲ発振周波数を発振し、ＣＲ発振式アナログ−デジタル回路２００が、ＣＲ発振周波数に基づくＣＲ発振クロックをカウントすることで抵抗値あるいは容量値をデジタル値に変換する。そのデジタル値は図示しないＣＰＵなどに与えられて対応する温度が特定されて管理される。なお、ＣＲ発振回路１００を２系統としたのは、例えばＩＣカード等の表と裏の両面の温度を２点測定する必要がある場合にも対応できるようにしている。   FIG. 2 shows a conventional circuit configuration example when the thermistor is a temperature sensor. In FIG. 2, the conventional circuit has at least two CR oscillation circuits 100 and a CR oscillation analog-digital circuit 200 in an integrated circuit, and a reference resistor 311, an oscillation capacitor 312, A thermistor 313 and a resistor 314 are connected. Then, the CR oscillation circuit 100 oscillates the CR oscillation frequency that fluctuates due to a change in resistance or capacitance depending on the temperature of the connected component, and the CR oscillation analog-digital circuit 200 counts the CR oscillation clock based on the CR oscillation frequency. Thus, the resistance value or the capacitance value is converted into a digital value. The digital value is given to a CPU (not shown) and the corresponding temperature is specified and managed. Note that the CR oscillator circuit 100 has two systems so that, for example, it is necessary to measure two temperatures on the front and back surfaces of an IC card or the like.

また、特許文献１には、温度に依存して共振周波数が変化する共振回路を有するセンサとして構成された温度センサを用いた温度測定システムが開示されている。   Patent Document 1 discloses a temperature measurement system using a temperature sensor configured as a sensor having a resonance circuit whose resonance frequency changes depending on temperature.

特開２００１−１４４６８３号公報JP 2001-144683 A

しかしながら、図２において、サーミスタ３１３は集積回路内に作りこむことは不可能であり、図２に示す回路構成ではＩＣカード、ＩＣタグに外付け部品として取り付けなければならず、コストの上昇や物品への実装の困難性が問題となる。   However, in FIG. 2, the thermistor 313 cannot be built in an integrated circuit. In the circuit configuration shown in FIG. 2, the thermistor 313 must be attached as an external component to an IC card or IC tag, which increases costs and products. Difficulty in mounting to the problem.

また、サーミスタは外部部品であるため、サーミスタ自体を他の抵抗体などへ取り替えられ、温度履歴管理上偽装がなされるおそれなどの問題があった。   Further, since the thermistor is an external component, there is a problem that the thermistor itself can be replaced with another resistor and the like, and the camouflage may be performed for temperature history management.

また、特許文献１の温度測定システムは、温度測定装置が、無線タグに向けて電波を発し、温度センサの共振周波数を検知し、その共振周波数に対応する温度を特定することが開示されている。このとき、特許文献１の温度測定装置は、電波の周波数をスイープさせることにより放出する電波の周波数を変化させることが必要となる。そのため、設定された電力が無線タグ側に供給されない可能性があり、無線タグ内の回路が安定して動作しないおそれがある。   Further, the temperature measurement system of Patent Document 1 discloses that a temperature measurement device emits radio waves toward a wireless tag, detects a resonance frequency of the temperature sensor, and specifies a temperature corresponding to the resonance frequency. . At this time, the temperature measurement device disclosed in Patent Document 1 needs to change the frequency of the radio wave to be emitted by sweeping the frequency of the radio wave. Therefore, there is a possibility that the set power is not supplied to the wireless tag side, and the circuit in the wireless tag may not operate stably.

そこで、上記の課題に鑑み、安定的な動作を保証し、小型化・薄型化が可能であり、温度管理上のセンサの偽装を防止することができる半導体集積回路、無線タグ及びセンサが求められている。   Therefore, in view of the above problems, there is a need for a semiconductor integrated circuit, a wireless tag, and a sensor that can guarantee stable operation, can be reduced in size and thickness, and can prevent impersonation of a sensor for temperature management. ing.

かかる課題を解決するため、第１の本発明の半導体集積回路は、発振回路からの発振周波数の変化に基づいて温度を測定する半導体集積回路において、発振回路の容量が強誘電体であり、強誘電体の温度変化によって変化する誘電特性に基づいて、発振周波数を変化させることを特徴とする。   In order to solve such a problem, the semiconductor integrated circuit according to the first aspect of the present invention is a semiconductor integrated circuit that measures temperature based on a change in the oscillation frequency from the oscillation circuit. It is characterized in that the oscillation frequency is changed based on the dielectric characteristics that change with the temperature change of the dielectric.

第２の本発明の半導体集積回路は、赤外線センサに強誘電体が設けられ、強誘電体が入射した赤外線により発熱し、その発熱による分極電荷量の変化を検出することで、入射する赤外線の遮断の有無を確認させることができる。   In the semiconductor integrated circuit according to the second aspect of the present invention, a ferroelectric substance is provided in an infrared sensor, heat is generated by infrared light incident on the ferroelectric substance, and a change in polarization charge amount due to the heat generation is detected. The presence or absence of interruption | blocking can be confirmed.

第３の本発明の無線タグは、センサを搭載した半導体集積回路を備えた無線タグにおいて、半導体集積回路が第１又は第２の本発明の半導体集積回路であることを特徴とする。   A wireless tag according to a third aspect of the present invention is a wireless tag including a semiconductor integrated circuit on which a sensor is mounted, wherein the semiconductor integrated circuit is the semiconductor integrated circuit according to the first or second aspect of the present invention.

第４の本発明のセンサは、強誘電体の温度変化によって変化する誘電特性に基づいて、直接的又は間接的に感知対象を感知することを特徴とするセンサ。   A sensor according to a fourth aspect of the present invention is a sensor characterized in that it senses a sensing object directly or indirectly based on a dielectric property that changes according to a temperature change of a ferroelectric substance.

本発明の半導体集積回路、無線タグ及びセンサによれば、安定的な動作を保証し、小型化・薄型化が可能であり、温度管理上のセンサの偽装を防止することができる。   According to the semiconductor integrated circuit, the wireless tag, and the sensor of the present invention, stable operation can be ensured, the size and thickness can be reduced, and the impersonation of the sensor for temperature management can be prevented.

（Ａ）第１の実施形態
以下、本発明の半導体集積回路、無線タグ及びセンサの第１の実施形態について図面を参照して説明する。 (A) First Embodiment Hereinafter, a semiconductor integrated circuit, a wireless tag, and a sensor according to a first embodiment of the present invention will be described with reference to the drawings.

本実施形態は、温度センサを搭載した半導体集回路を備える無線タグを物品に備え付けて、その物品に対する温度管理を行なうシステムに適用した場合を示す。   The present embodiment shows a case where a wireless tag including a semiconductor integrated circuit equipped with a temperature sensor is attached to an article and applied to a system for managing temperature for the article.

（Ａ−１）第１の実施形態の構成
図３は、物品に備え付けられた無線タグとリーダライタ装置との関係を示すイメージ図である。図３に示すように、物品１には、後述する、強誘電体薄膜キャパシタを温度センサとして同一基板上に有する半導体集積回路を持つ無線タグ２が備え付けられている。 (A-1) Configuration of First Embodiment FIG. 3 is an image diagram showing a relationship between a wireless tag attached to an article and a reader / writer device. As shown in FIG. 3, the article 1 is provided with a wireless tag 2 having a semiconductor integrated circuit having a ferroelectric thin film capacitor as a temperature sensor on the same substrate, which will be described later.

リーダライタ装置３は、所定帯域の無線電波を利用して無線タグ２との間で情報の送受信をし、無線タグ２に対して温度測定開始指示したり、無線タグ２が格納している又は測定した温度情報を読み込んだりするものである。また、リーダライタ装置３は、据置式、カード式、携帯式など種々の形態のものを適用することができる。   The reader / writer device 3 transmits / receives information to / from the wireless tag 2 using wireless waves of a predetermined band, and instructs the wireless tag 2 to start temperature measurement, or is stored in the wireless tag 2 or The measured temperature information is read. The reader / writer device 3 can be applied in various forms such as a stationary type, a card type, and a portable type.

リーダライタ装置３と無線タグ２との間の通信方式は、特に限定されず種々の通信方式を適用することができ、例えば、国際標準化機構が推進するＩＳＯ１５６９３等で規格された１３．５６ＭＨｚ帯周波数を用いた方式を適用できる。   The communication method between the reader / writer device 3 and the wireless tag 2 is not particularly limited, and various communication methods can be applied. For example, the 13.56 MHz band frequency standardized by ISO15693 promoted by the International Organization for Standardization A method using can be applied.

図４は、無線タグ２の内部構成例を示したブロック図である。図４に示すように、本実施形態の無線タグ２は、ＣＰＵ２１、メモリ２２、アンテナ部２３、温度センサ２４、ＣＲ発信器２５、アナログ／デジタル（Ａ／Ｄ）変換器２６を少なくとも有する。ＣＰＵ２１は、無線タグ２の機能を司るものであり、メモリ２２は、例えば、ＲＯＭ、ＲＡＭ、不揮発性の書き換え可能メモリ等を適用できる。   FIG. 4 is a block diagram illustrating an internal configuration example of the wireless tag 2. As shown in FIG. 4, the wireless tag 2 of this embodiment includes at least a CPU 21, a memory 22, an antenna unit 23, a temperature sensor 24, a CR transmitter 25, and an analog / digital (A / D) converter 26. The CPU 21 governs the function of the wireless tag 2, and the memory 22 can be, for example, ROM, RAM, nonvolatile rewritable memory, or the like.

温度センサ２４、ＣＲ発振器２５、Ａ／Ｄ変換器２６は、同一基板上の半導体集積回路として構成することができる。勿論、ＣＰＵ２１やメモリ２２なども同一基板上に設けることも可能である。つまり、従来のように、温度センサを外部部品とするのではなく、同一基板上に設けることができるので、システムの小型化、温度センサの取替え等による偽装を防止できる。   The temperature sensor 24, the CR oscillator 25, and the A / D converter 26 can be configured as a semiconductor integrated circuit on the same substrate. Of course, the CPU 21 and the memory 22 can also be provided on the same substrate. In other words, the temperature sensor can be provided on the same substrate instead of being an external component as in the prior art, so that it is possible to prevent impersonation due to downsizing of the system, replacement of the temperature sensor, or the like.

以下では、本実施形態の無線タグ２が備える温度センサ２４、ＣＲ発振器２５、Ａ／Ｄ変換器２６の構成について図面を参照しながら詳細に説明する。   Hereinafter, configurations of the temperature sensor 24, the CR oscillator 25, and the A / D converter 26 included in the wireless tag 2 of the present embodiment will be described in detail with reference to the drawings.

図１は、温度センサ、ＣＲ発振器、Ａ／Ｄ変換器を同一基板上に備えた半導体集積回路の回路図である。なお、図１のＣＲ発振器及びＡ／Ｄ変換器の回路は、図２に示す従来の回路に対応するものを適用できるので、対応する部品については対応する符号を付して示す。   FIG. 1 is a circuit diagram of a semiconductor integrated circuit including a temperature sensor, a CR oscillator, and an A / D converter on the same substrate. Since the CR oscillator and A / D converter circuit shown in FIG. 1 can be applied to the conventional circuit shown in FIG. 2, the corresponding parts are indicated by the corresponding reference numerals.

図１に示すように、２系統のＣＲ発振回路１００、Ａ／Ｄ変換器２００が同一基板上にあり、ＣＲ発振回路１００には、基準抵抗３１、基準キャパシタ３２、強誘電体薄膜キャパシタ３３、発振用抵抗３４が接続される。   As shown in FIG. 1, two CR oscillation circuits 100 and an A / D converter 200 are provided on the same substrate. The CR oscillation circuit 100 includes a reference resistor 31, a reference capacitor 32, a ferroelectric thin film capacitor 33, An oscillation resistor 34 is connected.

また、少なくとも強誘電体薄膜キャパシタ３３は、ＣＲ発振回路１００及びＡ／Ｄ変換器２００の半導体集積回路内の同一基板上に形成される。なお、ＣＲ発振回路１００に接続する他の部品類は、半導体集積回路内部あるいは外部のいずれで形成されても良い。   At least the ferroelectric thin film capacitor 33 is formed on the same substrate in the semiconductor integrated circuit of the CR oscillation circuit 100 and the A / D converter 200. Note that other components connected to the CR oscillation circuit 100 may be formed either inside or outside the semiconductor integrated circuit.

本実施形態では、温度センサ２４として、ＣＲ発振回路１００の容量に強誘電体薄膜キャパシタ３３を使用する。例えばＩＣカード等には近年強誘電体メモリが採用されており、強誘電体薄膜キャパシタを形成するプロセスが使用されているため、特別な工程を追加することなく容易に強誘電体薄膜キャパシタを追加できる。   In the present embodiment, as the temperature sensor 24, a ferroelectric thin film capacitor 33 is used for the capacitance of the CR oscillation circuit 100. For example, a ferroelectric memory has recently been adopted for IC cards, etc., and a process for forming a ferroelectric thin film capacitor is used. Therefore, a ferroelectric thin film capacitor can be easily added without adding a special process. it can.

ここで、強誘電体薄膜キャパシタ３３には様々な種類があるが、本実施形態では、鉛を含まない強誘電体メモリ材料として注目されているＳｒＢｉ２Ｔａ２０９（ＳＢＴ）を例にあげて説明する。   Here, there are various types of ferroelectric thin film capacitors 33. In the present embodiment, SrBi2Ta209 (SBT) which is attracting attention as a ferroelectric memory material not containing lead will be described as an example.

強誘電体薄膜キャパシタ３３は、組成、電極、焼成温度他いろいろなパラメータにより特性が変化するが、全般的にキュリー温度（Ｔｃ）をピークに誘電率が温度に応じて変化する特性がある。   The ferroelectric thin film capacitor 33 changes its characteristics depending on various parameters such as composition, electrodes, firing temperature, etc., but generally has a characteristic that the dielectric constant changes according to the temperature with the Curie temperature (Tc) as a peak.

図５は、ＳｒＢｉ２Ｔａ２０９（ＳＢＴ）の誘電率の温度特性を示す図である。図５に示すように、例えば、ＳｒＢｉ２Ｔａ２０９（ＳＢＴ）は、２０℃では約１８０程度の誘電率があり、６０℃では約２００程度の誘電率があるので、２０℃と６０℃と間の４０℃の温度差で約１０％以上の誘電率の変化がみられる。   FIG. 5 is a graph showing the temperature characteristics of the dielectric constant of SrBi2Ta209 (SBT). As shown in FIG. 5, for example, SrBi2Ta209 (SBT) has a dielectric constant of about 180 at 20 ° C., and has a dielectric constant of about 200 at 60 ° C. Therefore, 40 ° C. between 20 ° C. and 60 ° C. A change in dielectric constant of about 10% or more is observed at a temperature difference of 10%.

そこで、本実施形態では、このような温度特性のある強誘電体薄膜キャパシタ３３をＣＲ発振回路１００の容量として使用し、温度変化により変化する誘電率の変動によりＣＲ発振周波数も変化するから、ＣＲ発振回路１００で発振させるＣＲ発振クロックの周波数も変化させることができる。そして、Ａ／Ｄ変換器２００が抵抗値あるいは容量をデジタル化することで、その後の温度管理をデジタルで管理することができる。   Therefore, in the present embodiment, the ferroelectric thin film capacitor 33 having such temperature characteristics is used as the capacitance of the CR oscillation circuit 100, and the CR oscillation frequency also changes due to the change of the dielectric constant that changes due to the temperature change. The frequency of the CR oscillation clock oscillated by the oscillation circuit 100 can also be changed. Then, since the A / D converter 200 digitizes the resistance value or the capacity, the subsequent temperature management can be digitally managed.

ＣＲ発振回路１００は、接続する基準抵抗３１、基準キャパシタ３２、強誘電体薄膜キャパシタ３３、発振用抵抗３４の容量あるいは抵抗の変化によって変化するＣＲ発振周波数を発振させ、Ａ／Ｄ変換器２００に与えるものである。   The CR oscillation circuit 100 oscillates a CR oscillation frequency that changes depending on the capacitance or resistance change of the reference resistor 31, the reference capacitor 32, the ferroelectric thin film capacitor 33, and the oscillation resistor 34 to be connected to the A / D converter 200. Give.

Ａ／Ｄ変換器２００は、ＣＲ発振式Ａ／Ｄ変換器であり、所定時間内で、ＣＲ発振回路１００から与えられたＣＲ発振周波数に基づくＣＲ発振クロックをカウントし、抵抗値あるいは容量値をデジタル化するものである。なお、Ａ／Ｄ変換器２００は、ＣＲ発振クロックのカウント値を図示しないＣＰＵ２１に与える。   The A / D converter 200 is a CR oscillation type A / D converter, and counts a CR oscillation clock based on the CR oscillation frequency given from the CR oscillation circuit 100 within a predetermined time, and calculates a resistance value or a capacitance value. It is to be digitized. The A / D converter 200 gives the count value of the CR oscillation clock to the CPU 21 (not shown).

また、図１に示すように、Ａ／Ｄ変換器２００は、基準カウンタ２０１、測定カウンタ２０２、ＡＤＣコントロールレジスタ２０３、デコーダ２０４、Ｅｎａｂｌｅ ＡＤ−Ｃレジスタ２０５、ＯＲ回路２０６、同期回路２０７、微分器２０８及び２０９、出力回路２１０、入力回路２１１、Ｓｅｌｅｃｔ ＡＤ−Ｃ ｉｎｔレジスタ２１２、ＡＮＤ回路２１３、ＯＲ回路２１４を有して構成される。   As shown in FIG. 1, the A / D converter 200 includes a reference counter 201, a measurement counter 202, an ADC control register 203, a decoder 204, an Enable AD-C register 205, an OR circuit 206, a synchronization circuit 207, a differentiator. 208 and 209, an output circuit 210, an input circuit 211, a Select AD-C int register 212, an AND circuit 213, and an OR circuit 214.

（Ａ−２）第１の実施形態の動作
次に、図１に示す半導体集積回路における動作について図面を参照して説明する。 (A-2) Operation of First Embodiment Next, the operation of the semiconductor integrated circuit shown in FIG. 1 will be described with reference to the drawings.

Ａ／Ｄ変換器２００の動作について図６の動作波形を参照して説明する。   The operation of the A / D converter 200 will be described with reference to the operation waveform of FIG.

Ａ／Ｄ変換器２００は、ＣＲ発振回路１００に接続される抵抗あるいは容量の変化によって変化するＣＲ発振周波数に基づくＣＲ発振クロック（ＯＳＣ ｃｌｏｃｋ）をカウントし、抵抗値あるいは容量値をデジタル値に変換するものである。   The A / D converter 200 counts a CR oscillation clock (OSC clock) based on a CR oscillation frequency that changes according to a change in resistance or capacitance connected to the CR oscillation circuit 100, and converts the resistance value or capacitance value into a digital value. To do.

ここで、ＣＲ発振回路１００のＣＲ発振周波数ｆｏｓｃｃｌｋとＣＲ定数との関係は、以下の式で表される。 Here, the relationship between the CR oscillation frequency f oscclk of the CR oscillation circuit 100 and the CR constant is expressed by the following equation.

１／ｆｏｓｃｃｌｋ＝ｔｏｓｃｃｌｋ＝ｋｏｓｃｃｌｋ・Ｃ・Ｒ…（１）
ここで、ｋｏｓｃｃｌｋは、電源電圧、基準抵抗、構成するトランジスタなどから決まる比例定数をいう。 1 / f oscclk = t oscclk = k oscclk · C · R (1)
Here, k oscclk is a proportionality constant determined by a power supply voltage, a reference resistance, a constituent transistor, and the like.

まず、基準カウンタ２０１に所望のゲート時間となるようカウンタ値（ここではｎＡ０とする）を設定する。なお、ゲート時間は、システムクロック（Ｓｙｓｔｅｍ＿Ｃ１ｏｃｋ）とカウント値（カウンタ最大値ｎＡ０）との積であらわされる。また、測定カウンタ２０２の値を“０”にプリセットする。   First, a counter value (here, nA0) is set in the reference counter 201 so that a desired gate time is reached. The gate time is represented by the product of the system clock (System_C1ock) and the count value (counter maximum value nA0). Further, the value of the measurement counter 202 is preset to “0”.

次に、ＡＤＣコントロールレジスタ２０３を所望の発振モードに設定することで、デコーダ２０４に発振モードが決まり、発振に用いられる抵抗及びキャパシタが選択される。発振モードは、図示しないＣＰＵを通じた操作により設定可能としてよい。   Next, by setting the ADC control register 203 to a desired oscillation mode, the oscillation mode is determined by the decoder 204, and a resistor and a capacitor used for oscillation are selected. The oscillation mode may be set by an operation through a CPU (not shown).

そこで、ＥｎａｂｌｅＡＤ−Ｃレジスタ２０５をセットすると、ＥｎａｂｌｅＡＤ−Ｃレジスタ２０５からの出力がＯＲ回路２０６及び同期回路２０７に与えられる。そして、同期回路２０７からのＣＲＯＮ信号がＡＮＤ回路２１３でシステムクロックに同期してセットされ、システムクロックにより基準カウンタ２０１はカウントアップを開始する。   Therefore, when the EnableAD-C register 205 is set, an output from the EnableAD-C register 205 is given to the OR circuit 206 and the synchronization circuit 207. Then, the CRON signal from the synchronization circuit 207 is set in synchronization with the system clock by the AND circuit 213, and the reference counter 201 starts counting up by the system clock.

また、同期回路２０７からＣＲＯＮ信号がＣＲ発振回路１００に与えられると、ＣＲ発振回路１００は動作を開始する。   When the CRON signal is given from the synchronization circuit 207 to the CR oscillation circuit 100, the CR oscillation circuit 100 starts its operation.

ここで、ＣＲ発振回路１００の動作について図面を参照して説明する。図７は、ＣＲ発振の動作開始を示す概略的な回路図であり、図８はＣＲ発振回路１００における動作波形図である。   Here, the operation of the CR oscillation circuit 100 will be described with reference to the drawings. FIG. 7 is a schematic circuit diagram showing the start of operation of CR oscillation, and FIG. 8 is an operation waveform diagram in the CR oscillation circuit 100.

図７において、Ａ／Ｄ変換器２００から変換開始信号（ＣＲＯＮ信号）が入力されると、図７（Ａ）から図７（Ｂ）のように変換してＣＲ発振周波数を発振させる。   In FIG. 7, when a conversion start signal (CRON signal) is input from the A / D converter 200, conversion is performed as shown in FIGS. 7A to 7B to oscillate the CR oscillation frequency.

図８に示すように、ＣＲ発振回路１００にＣＲＯＮ信号が与えられると（図７（ア））、インバータ１０１を通じて抵抗３４に電流が流れ、ＣＲ発振周波数が発振される（図７（イ））。そして、基準抵抗３１の抵抗値に達するとインバータ１０２に信号が通り、インバータ１０２から反転した信号が出力され（図７（ウ））、インバータ１０３からさらに反転した信号が出力されると（図７（エ））、図７（イ）の抵抗値が下がりＣＲ発振波形を形成する。なお、図７（ウ）の信号がＡ／Ｄ変換器２００に与えられる。   As shown in FIG. 8, when a CRON signal is given to the CR oscillation circuit 100 (FIG. 7A), current flows through the resistor 34 through the inverter 101, and the CR oscillation frequency is oscillated (FIG. 7A). . When the resistance value of the reference resistor 31 is reached, a signal passes through the inverter 102, an inverted signal is output from the inverter 102 (FIG. 7C), and a further inverted signal is output from the inverter 103 (FIG. 7). (D)), the resistance value of FIG. 7 (A) decreases to form a CR oscillation waveform. The signal shown in FIG. 7C is supplied to the A / D converter 200.

図１に戻り、同期回路２０７からＣＲＯＮ信号がＣＲ発振回路１００に与えられ、ＣＲ発振回路１００が動作を開始すると、ＣＲ発振周波数がＣＲ発振回路１００から入力回路２１１に与えられる。   Returning to FIG. 1, the CRON signal is supplied from the synchronization circuit 207 to the CR oscillation circuit 100, and when the CR oscillation circuit 100 starts operating, the CR oscillation frequency is supplied from the CR oscillation circuit 100 to the input circuit 211.

そして、入力回路２１１からの出力がＣＲ発振クロックとして測定カウンタ２０２に与えられ、測定カウンタ２０２はＣＲ発振クロックのカウントを開始する。   The output from the input circuit 211 is supplied to the measurement counter 202 as a CR oscillation clock, and the measurement counter 202 starts counting the CR oscillation clock.

ゲート時間経過後（本実施形態では、ｎＡ０＋１〜ＦＦＦＦをゲート時間とする）、基準カウンタ２０１はオーバーフローしてオーバーフローフラグをセットし、その信号によりＣＲ発振は停止し、測定カウンタ２０２もカウントを停止する。   After the elapse of the gate time (in this embodiment, nA0 + 1 to FFFF is set as the gate time), the reference counter 201 overflows and sets the overflow flag, the CR oscillation is stopped by the signal, and the measurement counter 202 also stops counting. .

図６において、測定カウンタ２０２のカウント値ｎＢ０は、ゲート時間中のＣＲ発振クロックのカウント値であり、ＣＲ発振クロックの周波数に比例したものとなる。   In FIG. 6, the count value nB0 of the measurement counter 202 is the count value of the CR oscillation clock during the gate time, and is proportional to the frequency of the CR oscillation clock.

ここで、ＣＲ発振回路１００自体を構成するトランジスタ等にも温度よる特性変化があるため、同じ容量、抵抗の場合でも周波数が変化してしまう。そのため、その温度センサではない、温度による特性変化を有しない基準抵抗、基準容量をその都度発振させ周波数を測定し、ＣＲ発振回路１００の温度特性を相殺させる。   Here, since the characteristics and the like of the transistors constituting the CR oscillation circuit 100 itself also vary with temperature, the frequency changes even when the capacitance and resistance are the same. For this reason, a reference resistor and a reference capacitor that are not temperature sensors and do not change in characteristics due to temperature are oscillated each time, and the frequency is measured to cancel the temperature characteristics of the CR oscillation circuit 100.

ところが、本実施形態では、温度センサとしてＣＲ発振回路１００の容量に強誘電体薄膜キャパシタ３３を使用するため、強誘電体薄膜キャパシタ３３の誘電率の温度特性により、ＣＲ発振周波数もそれに比例して変動するため、温度センサとして機能させることができる。   However, in this embodiment, since the ferroelectric thin film capacitor 33 is used as the temperature sensor for the capacitance of the CR oscillation circuit 100, the CR oscillation frequency is proportional to the temperature characteristic of the dielectric constant of the ferroelectric thin film capacitor 33. Since it fluctuates, it can function as a temperature sensor.

また、本実施形態では表、裏などの温度を測定することは不可能になるが、半導体集積回路内で発熱する箇所がある場合、離れた２箇所の温度を測定することで平均化できるようになるので、例ではＣＲ発振回路を２系統のままとした。   In addition, in this embodiment, it is impossible to measure the temperature of the front, back, etc., but if there is a place where heat is generated in the semiconductor integrated circuit, it can be averaged by measuring the temperature of two separate places. Therefore, in the example, two CR oscillation circuits are left.

（Ａ−３）第１の実施形態の効果
以上のように、第１の実施形態によれば、半導体集積回路内部の強誘電体薄膜キャパシタをＣＲ発振式Ａ／Ｄ変換回路に接続したことで、集積回路外部のサーミスタなどの温度センサを不要にできる。その結果、従来のように外部部品が不要になり、商品のコストを下げることが可能になる。また、本実施形態によれば、ＩＣカード、ＩＣタグなどの製品では形状の薄型化、小型化が重要な要件であり、これも容易に実現することが可能になる。 (A-3) Effect of First Embodiment As described above, according to the first embodiment, the ferroelectric thin film capacitor in the semiconductor integrated circuit is connected to the CR oscillation type A / D conversion circuit. This eliminates the need for a temperature sensor such as a thermistor outside the integrated circuit. As a result, there is no need for external parts as in the prior art, and the cost of the product can be reduced. Further, according to the present embodiment, in products such as an IC card and an IC tag, it is important to make the shape thinner and smaller, and this can be easily realized.

（Ｂ）第２の実施形態
次に、本発明の半導体集積回路、無線タグ及びセンサの第２の実施形態について図面を参照して説明する。 (B) Second Embodiment Next, a semiconductor integrated circuit, a wireless tag, and a sensor according to a second embodiment of the present invention will be described with reference to the drawings.

第２の実施形態も、強誘電体薄膜キャパシタを用いる点で第１の実施形態と共通する。しかし、第１の実施形態では、強誘電体薄膜キャパシタが触れる温度を直接的に感知するのに対して、第２の実施形態では、強誘電体薄膜キャパシタが赤外線を受光することにより熱を発生しその熱により強誘電体の分極が減少する。そして、その分極の減少からキャパシタの電極に電圧が発生することをセンサとして利用する。   The second embodiment is also common to the first embodiment in that a ferroelectric thin film capacitor is used. However, in the first embodiment, the temperature touched by the ferroelectric thin film capacitor is directly sensed, whereas in the second embodiment, the ferroelectric thin film capacitor generates heat by receiving infrared rays. The heat reduces the ferroelectric polarization. Then, the fact that a voltage is generated at the electrode of the capacitor due to the decrease in the polarization is used as a sensor.

図９は、第２の実施形態に係る回路構成図を示す。図９に示す回路は、１つの半導体集積回路上に形成されるものである。   FIG. 9 is a circuit configuration diagram according to the second embodiment. The circuit shown in FIG. 9 is formed on one semiconductor integrated circuit.

図９示すように、本実施形態の半導体集集積回路は、並列比較式Ａ／Ｄ変換器４００、赤外線センサ５００、アンプ６００、出力電圧変化検出回路７００を少なくとも備える。   As shown in FIG. 9, the semiconductor integrated circuit of this embodiment includes at least a parallel comparison A / D converter 400, an infrared sensor 500, an amplifier 600, and an output voltage change detection circuit 700.

並列比較式Ａ／Ｄ変換器４００は、アンプ６００を通じて受け取った赤外線センサ５００の出力をデジタル化するものである。なお、本実施形態では、赤外線センサ５００からの出力が電圧であるため、並列比較式Ａ／Ｄ変換器４００を適用したが、電圧変換式であれば他のＡ／Ｄ変換器を適用しても良い。   The parallel comparison type A / D converter 400 digitizes the output of the infrared sensor 500 received through the amplifier 600. In this embodiment, since the output from the infrared sensor 500 is a voltage, the parallel comparison type A / D converter 400 is applied. However, if the voltage conversion type is used, another A / D converter is applied. Also good.

赤外線センサ５００は、直列に接続された強誘電体薄膜キャパシタ５０１、それに並列に接続された抵抗５０２、インピーダンス変換用のＦＥＴ５０３を有して構成される。   The infrared sensor 500 includes a ferroelectric thin film capacitor 501 connected in series, a resistor 502 connected in parallel thereto, and an FET 503 for impedance conversion.

ここで、図１０は、本実施形態の赤外線受光用窓を有したパッケージの例を示す。また、図１１は、本実施形態の集積回路例の断面図である。図１０に示すように、本実施形態の半導体集積回路は、例えばガラス等でなる赤外線の受光窓１０ａで封止し、その受光窓１０ａから入射した赤外線が、強誘電体薄膜キャパシタ５０１に照射し熱を発生させることができる構成である。また、例えば、ＩＣカードやＩＣタグ等のように実装上薄くなくてはならないものの場合には、図１１に示すように、集積回路裏面に、例えばシリコン基板をエッチングするなどして赤外線の入射口１０ｂを形成するようにしても良い。   Here, FIG. 10 shows an example of a package having an infrared light receiving window of the present embodiment. FIG. 11 is a cross-sectional view of an example of an integrated circuit according to this embodiment. As shown in FIG. 10, the semiconductor integrated circuit of this embodiment is sealed with an infrared light receiving window 10a made of glass or the like, and the infrared light incident from the light receiving window 10a irradiates the ferroelectric thin film capacitor 501. It is the structure which can generate | occur | produce heat. For example, in the case of an IC card, IC tag, or the like that must be thin for mounting, as shown in FIG. 11, an infrared incident port is formed by etching, for example, a silicon substrate on the back surface of the integrated circuit. 10b may be formed.

また、図１２は、強誘電体薄膜キャパシタ５０１への赤外線入射と出力電圧との関係を示す関係図である。   FIG. 12 is a relationship diagram showing the relationship between the incidence of infrared rays on the ferroelectric thin film capacitor 501 and the output voltage.

一般に、強誘電体薄膜キャパシタ５０１は、赤外線があたると熱が発生し、その熱により強誘電体の分極が減少する。そのため、図１２（ａ）に示すように、分極の減少から強誘電体薄膜キャパシタの電極に電圧が発生する。また、強誘電体薄膜キャパシタ５０１への赤外線照射をやめると熱の発生をやめ、強誘電体の分極が増加する。そのため、図１２（ｂ）に示すように、分極の増加から強誘電体薄膜キャパシタの電極に電圧が減少する。   In general, the ferroelectric thin film capacitor 501 generates heat when irradiated with infrared rays, and the polarization of the ferroelectric decreases due to the heat. Therefore, as shown in FIG. 12A, a voltage is generated at the electrode of the ferroelectric thin film capacitor due to the decrease in polarization. Further, when the infrared thin film irradiation to the ferroelectric thin film capacitor 501 is stopped, heat generation is stopped and the polarization of the ferroelectric increases. Therefore, as shown in FIG. 12B, the voltage decreases at the electrode of the ferroelectric thin film capacitor due to the increase in polarization.

そこで、本実施形態では、この強誘電体薄膜キャパシタ５０１への赤外線照射に係る熱の変化に応じた出力電圧の変化を検知することで、間接的なセンサとして機能させるものとする。   Therefore, in the present embodiment, it is assumed that the ferroelectric thin film capacitor 501 functions as an indirect sensor by detecting a change in output voltage corresponding to a change in heat associated with infrared irradiation.

アンプ６００は、赤外線センサ５００からの出力電圧を増幅して、並列比較式Ａ／Ｄ変換器４００及び出力電圧変化検出回路７００に与えるものである。これにより、強誘電体薄膜キャパシタ５０１からの出力電圧を所望の倍率に増幅することができる。なお、アンプ６０による出力電圧の増幅率は、強誘電体薄膜キャパシタの材料や検知したい対象物、パッケージなどにより調整することができる。   The amplifier 600 amplifies the output voltage from the infrared sensor 500 and supplies the amplified voltage to the parallel comparison A / D converter 400 and the output voltage change detection circuit 700. Thereby, the output voltage from the ferroelectric thin film capacitor 501 can be amplified to a desired magnification. The amplification factor of the output voltage by the amplifier 60 can be adjusted by the material of the ferroelectric thin film capacitor, the object to be detected, the package, and the like.

出力電圧変化検出回路７００は、アンプ６００を通じて赤外線センサ５００の出力を受け取り、赤外線センサ５００の出力電圧が変化したことを検出すると出力するものである。また、出力電圧変化検出回路７００は、赤外線センサ５００の出力変化を検出すると、Ａ／Ｄ変換割り込み（ＡＤＩＮＴ）を発生させて、Ａ／Ｄ変換を行い温度の変化を記録させる。   The output voltage change detection circuit 700 receives the output of the infrared sensor 500 through the amplifier 600 and outputs it when it detects that the output voltage of the infrared sensor 500 has changed. When the output voltage change detection circuit 700 detects an output change of the infrared sensor 500, the output voltage change detection circuit 700 generates an A / D conversion interrupt (ADINT), performs A / D conversion, and records a change in temperature.

（Ｂ−３）第２の実施形態の効果
以上のように、本実施形態によれば、サーミスタ、サーモパイルなどの外つけセンサの替わりに強誘電体薄膜キャパシタで焦電式の赤外線センサを構成することで外つけ部品を不要にすることができる。 (B-3) Effect of Second Embodiment As described above, according to the present embodiment, a pyroelectric infrared sensor is configured with a ferroelectric thin film capacitor instead of an external sensor such as a thermistor or a thermopile. This eliminates the need for external parts.

さらに、本実施形態によれば、強誘電体薄膜キャパシタを発振に用いたりしないため、キャパシタは分極反転をすることはなく、キャパシタ特性の劣化しないセンサを実現できる。また、センサを駆動する必要がないため、低消費電力化が可能になる。   Furthermore, according to the present embodiment, since a ferroelectric thin film capacitor is not used for oscillation, the capacitor does not undergo polarization inversion, and a sensor that does not deteriorate the capacitor characteristics can be realized. Further, since it is not necessary to drive the sensor, it is possible to reduce power consumption.

（Ｃ）他の実施形態
上述した第１及び第２の実施形態に係るシステムは、強誘電体メモリなど強誘電体薄膜キャパシタを有する集積回路、特にＩＣカード、ＩＣタグなどで温度履歴などを監視するシステムを安価で、且つ小型に構成することを可能にする。 (C) Other Embodiments The system according to the first and second embodiments described above monitors temperature history and the like with an integrated circuit having a ferroelectric thin film capacitor such as a ferroelectric memory, particularly with an IC card or IC tag. This makes it possible to configure the system to be inexpensive and small.

また、第１及び第２の実施形態はともに、センサとなる強誘電体薄膜キャパシタを同一基板上に形成するとしたが、別基板に形成後、同一のパッケージに組み入れることも可能である。さらに、強誘電体薄膜はＳＢＴを例に説明しているが、これに限定されず、ＰＺＴなど強誘電体特性を有し薄膜化が可能なものであれば良い。   In both the first and second embodiments, the ferroelectric thin film capacitor serving as the sensor is formed on the same substrate. However, the ferroelectric thin film capacitor can be incorporated in the same package after being formed on another substrate. Furthermore, although the ferroelectric thin film has been described by taking SBT as an example, the ferroelectric thin film is not limited to this, and any ferroelectric thin film having a ferroelectric characteristic such as PZT can be used.

第１の実施形態の温度センサを搭載した半導体集積回路の回路構成図である。It is a circuit block diagram of the semiconductor integrated circuit carrying the temperature sensor of 1st Embodiment. 従来の温度センサを搭載した半導体集積回路の回路構成図である。It is a circuit block diagram of the semiconductor integrated circuit carrying the conventional temperature sensor. 第１の実施形態の無線タグとリーダライタ装置との関係を示すイメージ図である。It is an image figure which shows the relationship between the wireless tag and reader / writer apparatus of 1st Embodiment. 第１の実施形態の無線タグの内部構成を示す機能ブロック図である。It is a functional block diagram which shows the internal structure of the wireless tag of 1st Embodiment. 第１の実施形態の強誘電体薄膜キャパシタ（ＳＢＴ）の誘電率の温度特性を示す図である。It is a figure which shows the temperature characteristic of the dielectric constant of the ferroelectric thin film capacitor (SBT) of 1st Embodiment. 第１の実施形態の半導体集積回路の動作波形図である。It is an operation | movement waveform diagram of the semiconductor integrated circuit of 1st Embodiment. 第１の実施形態のＣＲ発振回路の概略的な回路図である。1 is a schematic circuit diagram of a CR oscillation circuit according to a first embodiment. 第１の実施形態のＣＲ発振回路の動作波形図である。FIG. 3 is an operation waveform diagram of the CR oscillation circuit of the first embodiment. 第２の実施形態の半導体集積回路の回路構成図である。It is a circuit block diagram of the semiconductor integrated circuit of 2nd Embodiment. 第２の実施形態の赤外線受光窓を有したパッケージの例を示す図である。It is a figure which shows the example of the package which has the infrared rays light reception window of 2nd Embodiment. 第２の実施形態の半導体集積回路の断面図である。It is sectional drawing of the semiconductor integrated circuit of 2nd Embodiment. 第２の実施形態の強誘電体薄膜キャパシタの赤外線入射と出力電圧との関係を示す関係図である。It is a relationship figure which shows the relationship between the infrared rays incidence and output voltage of the ferroelectric thin film capacitor of 2nd Embodiment.

符号の説明Explanation of symbols

２…無線タグ、２４…温度センサ、２５、１００…ＣＲ発振器、１６、２００…Ａ／Ｄ変換器、３３、５０１…強誘電体薄膜キャパシタ、５００…赤外線センサ。
2 ... wireless tag, 24 ... temperature sensor, 25, 100 ... CR oscillator, 16, 200 ... A / D converter, 33, 501 ... ferroelectric thin film capacitor, 500 ... infrared sensor.

Claims (9)

発振回路からの発振周波数の変化に基づいて温度を測定する半導体集積回路において、上記発振回路の容量が強誘電体であり、上記強誘電体の温度変化によって変化する誘電特性に基づいて、上記発振周波数を変化させることを特徴とする半導体集積回路。   In a semiconductor integrated circuit that measures temperature based on a change in oscillation frequency from an oscillation circuit, the oscillation circuit has a capacitance of a ferroelectric, and the oscillation is based on a dielectric characteristic that varies with a change in temperature of the ferroelectric. A semiconductor integrated circuit characterized by changing a frequency. 上記強誘電体は、少なくとも上記発振回路と同一基板上に形成されていることを特徴とする請求項１に記載の半導体集積回路。   2. The semiconductor integrated circuit according to claim 1, wherein the ferroelectric is formed on at least the same substrate as the oscillation circuit. 赤外線センサに強誘電体が設けられ、上記強誘電体が入射した赤外線により発熱し、その発熱による分極電荷量の変化を検出することで、入射する赤外線の遮断の有無を確認させることができる半導体集積回路。   A semiconductor in which a ferroelectric substance is provided in an infrared sensor, and the ferroelectric substance generates heat by the incident infrared rays, and can detect whether or not the incident infrared rays are blocked by detecting a change in polarization charge amount due to the generated heat. Integrated circuit. 請求項３に記載の半導体集積回路は、上記赤外線センサを赤外線の入射用の窓つきのパッケージに封止したことを特徴とする半導体集積回路。   4. The semiconductor integrated circuit according to claim 3, wherein the infrared sensor is sealed in a package with an infrared incident window. 請求項３に記載の半導体集積回路は、集積回路の裏面をエッチングすることにより、赤外線入射口を形成したことを特徴とする半導体集積回路。   4. The semiconductor integrated circuit according to claim 3, wherein an infrared incident port is formed by etching a back surface of the integrated circuit. センサを搭載した半導体集積回路を備えた無線タグにおいて、上記半導体集積回路が請求項１〜５のいずれかに記載の半導体集積回路であることを特徴とする無線タグ。   A wireless tag comprising a semiconductor integrated circuit on which a sensor is mounted, wherein the semiconductor integrated circuit is the semiconductor integrated circuit according to claim 1. 強誘電体の温度変化によって変化する誘電特性に基づいて、直接的又は間接的に感知対象を感知することを特徴とするセンサ。   A sensor characterized in that it senses a sensing object directly or indirectly based on a dielectric property that changes with a temperature change of a ferroelectric material. 上記強誘電体が発振回路の容量として使用され、温度変化による誘電率の変化により発振周波数を変化させることで温度を感知することを特徴とする請求項７に記載のセンサ。   8. The sensor according to claim 7, wherein the ferroelectric is used as a capacitor of an oscillation circuit, and temperature is sensed by changing an oscillation frequency by a change in dielectric constant due to a temperature change. 上記強誘電体が、入射した赤外線により発熱し、その発熱による分極電荷量の変化を検出することで、入射する赤外線の遮断の有無を確認することを特徴とする請求項７に記載のセンサ。



8. The sensor according to claim 7, wherein the ferroelectric material generates heat by incident infrared rays and detects whether or not the incident infrared rays are blocked by detecting a change in polarization charge amount due to the generated heat.



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