JP2007015378A - Functional film-containing structure and manufacturing method of functional film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a functional film capable of easily peeling the functional film formed on a film forming substrate from the film forming substrate. <P>SOLUTION: The manufacturing method of the functional film comprises a process (a) for forming a separation layer on a substrate containing a material having heat resistance against a predetermined temperature using an inorganic material, a process (b) for forming a layer to be peeled, which contains the functional film formed using a functional material, on the separation layer, and a process (c) for peeling the layer to be peeled from the substrate or lowering the joining strength of the layer to be peeled and the substrate by heat-treating a structure including the substrate, the separation layer and the layer to be peeled at the predetermined temperature. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a functional film including a dielectric, a piezoelectric body, a pyroelectric body, a magnetic body, a semiconductor, and the like, and a functional film-containing structure used in the process of manufacturing the functional film.

  In recent years, in response to needs for downsizing, speeding up, integration, and multifunctionalization of electronic devices, it is possible to apply a predetermined electric field or magnetic field by applying an electric or magnetic field such as a dielectric, piezoelectric, magnetic, pyroelectric, or semiconductor. Research has been actively conducted to manufacture devices including functional materials such as electronic ceramics that exhibit the above functions using various film forming techniques.

  For example, in order to enable high-definition and high-quality printing in an inkjet printer, it is necessary to make the ink nozzles of the inkjet head fine and highly integrated. Therefore, miniaturization and high integration are also required for the piezoelectric actuator that drives each ink nozzle. In such a case, a film forming technique capable of forming a layer thinner than the bulk material and capable of forming a fine pattern is desired, and film forming techniques such as a sputtering method, a sol-gel method, and an aerosol deposition method are required. It has been studied.

However, a film of functional material formed by film formation (also simply referred to as “functional film”) does not perform sufficiently in the state after film formation, and has performance as compared with a bulk material. Inferiority is a problem.
In order to fully express the function of the functional film, it is necessary to perform heat treatment at a relatively high temperature (for example, about 500 ° C. to 1000 ° C.) after film formation. In that case, since the substrate (film formation substrate) used at the time of film formation is also heat-treated at the same time, high heat resistance is required for the material of the film formation substrate. On the other hand, when using the produced functional film, there is a demand to use various types of substrates depending on the device, such as a flexible substrate using a resin. Therefore, a method has been studied in which a functional film formed on a film formation substrate can be peeled from the film formation substrate without impairing its function.

  As a related technique, Patent Document 1 discloses a laminated body for thin film transfer comprising a heat-resistant substrate, a release layer mainly composed of carbon and / or a carbon compound, and a functional thin film as main components (No. 1). 1, pages 3). Patent Document 1 discloses that the release layer can be removed by oxidation (combustion), so that the functional thin film can be peeled off from the heat-resistant substrate and transferred to another substrate. .

  Patent Document 2 discloses a peeling method that can be easily peeled regardless of the physical properties and conditions of an object to be peeled, and in particular, enables transfer to various transfer bodies. This method is a peeling method in which an object to be peeled is separated from the substrate via a separation layer composed of a laminate of a plurality of layers on the substrate, and the separation layer is irradiated with irradiation light to separate the separation material. A peeling method is disclosed in which peeling occurs in the layer and / or interface of the layer, and the object to be peeled is detached from the substrate (pages 1 and 2).

Patent Document 3 discloses a functional thin film transfer method for obtaining a functional thin film with few defects by easily and completely peeling at the interface between the functional thin film structure and the separation layer. That is, this method is a transfer method in which a functional thin film formed on a first substrate is transferred onto a second substrate, and a separation layer including a metal nitride layer is formed on the first substrate, followed by separation. A functional thin film structure containing oxygen is directly formed on the layer, a second substrate is provided on the functional thin film structure, and an oxide layer is formed by oxidizing the separation layer on the functional thin film structure side by heating. The functional thin film structure peeled off at the interface between the layer and the functional thin film structure and formed on the first substrate is transferred onto the second substrate (first page).
JP 54-94905 A (first and third pages) JP-A-10-125929 (pages 1 and 2) JP 2002-305334 A (first page)

  However, in Patent Document 1, since the release layer is removed by an oxidation reaction, the atmosphere in the heat treatment process is limited to an oxygen atmosphere. Moreover, since carbon or a carbon compound is used as the release layer, there is an upper limit on the heating temperature. For example, in the embodiment disclosed in Patent Document 1, the processing temperature in the transfer process is 630 ° C. at the maximum. Therefore, the invention disclosed in Patent Document 1 cannot be applied to the manufacture of electronic ceramics that require heat treatment at a relatively high temperature (for example, 900 ° C. or higher).

  In Patent Document 2, peeling is caused in the separation layer by irradiating the light absorption layer included in the separation layer with laser light to cause ablation in the light absorption layer. At that time, since the separation layer is irradiated with the irradiation light through the substrate, the substrate needs to have translucency. Therefore, it is not preferable because the substrate material is limited.

  Further, in Patent Document 3, since a complicated laminated structure including a nitride layer and an oxide layer is formed, the process is complicated and the manufacturing cost may increase. Further, in Patent Document 3, the metal nitride layer contained in the separation layer is changed into an oxide by heat treatment, thereby generating stress at the interface between the two and reducing the adhesion force. Therefore, it is considered that there is a problem in peelability.

  Accordingly, in view of the above points, a first object of the present invention is to provide a method of manufacturing a functional film that can easily peel the functional film formed on the film formation substrate from the film formation substrate. And Moreover, this invention makes it the 2nd objective to provide the functional film containing structure used in the manufacture process of such a functional film.

  In order to solve the above problems, a functional film-containing structure according to one aspect of the present invention is disposed on a substrate, a separation layer formed using an inorganic material on the substrate, and the separation layer. A functional film-containing structure including a layer to be peeled including a functional film formed using a functional material, wherein the layer to be peeled is peeled from the substrate by heating the separation layer Alternatively, the bonding strength between the layer to be peeled and the substrate is lowered by heating the separation layer.

  The method for producing a functional film according to one aspect of the present invention includes a step (a) of forming a separation layer using an inorganic material on a substrate including a material having heat resistance to a predetermined temperature. (B) forming a layer to be peeled including a functional film formed using a functional material on the separation layer; and a structure including the substrate, the separation layer, and the layer to be peeled, at the predetermined temperature. (C) which peels the layer to be peeled from the substrate or reduces the bonding strength between the layer to be peeled and the substrate.

  Here, “reaction” means a process in which another substance or substance system having a different composition or structure is generated from the substance or substance system, and one compound is changed to two or more simple substances. And a process in which two or more kinds of substances different from the first are generated based on two kinds of substances, at least one of which is a compound. The former case is particularly called “decomposition”, and the decomposition caused by heating is called “thermal decomposition”.

  According to the present invention, since the separation layer containing the inorganic material that can be removed by heating is provided between the film formation substrate and the functional film, the film formation substrate and the functional film can be easily separated, or both The bonding strength can be reduced, and mechanical separation can be easily performed in a subsequent process. Therefore, the characteristics of the functional film can be improved by heat treatment, and the functional film with improved characteristics can be used by being disposed on a flexible substrate having relatively low heat resistance. Therefore, an element having excellent characteristics can be appropriately mounted on a device according to an application, and the performance of the entire device using such an element can be improved.

Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings. The same constituent elements are denoted by the same reference numerals, and the description thereof is omitted.
FIG. 1 is a flowchart showing a method for producing a functional film according to an embodiment of the present invention. 2-4 is a figure for demonstrating the manufacturing method of the functional film which concerns on one Embodiment of this invention, FIG. 2 of them is the function which concerns on the 1st Embodiment of this invention. The process of producing the property-containing structure is shown.

First, in step S1 of FIG. 1, a substrate 101 as shown in FIG. 2A is prepared. As the substrate 101, for example, an oxide single crystal substrate, a semiconductor single crystal substrate, a ceramic substrate, a glass substrate, or a metal substrate is used.
Specific examples of the oxide single crystal substrate material include magnesium oxide (MgO), alumina (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), zinc oxide (ZnO), spinel (magnesium aluminate, MgAl ₂ O _4). ), Strontium titanate (SrTiO ₃ ), lanthanum aluminate (lanthanum aluminate, LaAlO ₃ ), lithium niobate (LiNbO ₃ ), lithium tantalate (LiTaO ₃ ) and the like. Since these materials are stable in an oxidizing atmosphere, they can be heat-treated in the atmosphere at a high temperature (for example, about 1000 ° C. in the case of magnesium oxide). Moreover, a functional film can be formed by epitaxial growth by selecting a substrate material having a predetermined lattice constant according to the functional film to be manufactured.

  Specific examples of the material for the semiconductor single crystal substrate include silicon (Si), germanium (Ge), gallium arsenide (GaAs), gallium phosphide (GaP), and indium phosphide (InP). Since these materials are stable in a reducing atmosphere, they can be heat-treated in the reducing atmosphere at a high temperature (for example, about 1000 ° C. in the case of silicon). Moreover, a functional film can be formed by epitaxial growth by selecting a substrate material having a predetermined lattice constant according to the functional film to be manufactured.

Examples of the material for the ceramic substrate include alumina (Al ₂ O ₃ ), zirconia (ZrO ₂ ), and aluminum nitride (AlN). Since these materials are stable in the atmosphere and have high heat resistance, they can be heat-treated in the atmosphere at a high temperature (for example, about 1100 ° C. in the case of alumina). In addition, the manufacturing cost can be reduced because it is inexpensive.

  Specific examples of the material for the glass substrate include silicate glass, alkali silicate glass, borosilicate glass, soda lime glass, and lead glass. Since these materials are stable in an oxidizing atmosphere, they can be heat-treated in the atmosphere at a high temperature (for example, about 900 ° C. in the case of silicate glass). Further, since it is cheaper than a single crystal substrate, manufacturing cost can be reduced.

Specific examples of the material for the metal substrate include metals such as platinum (Pt), copper (Cu), nickel (Ni), and iron (Fe), and alloys such as stainless steel. Since these materials are stable in a reducing atmosphere, they can be heat-treated in the reducing atmosphere at a high temperature (for example, about 1000 ° C. in the case of platinum). Further, since it is cheaper than a single crystal substrate, manufacturing cost can be reduced.
As will be described later, the substrate material is selected according to the functional film deposition temperature, the heat treatment (post-annealing) temperature, and the heat treatment atmosphere.

Next, in step S <b> 2, as shown in FIG. 2B, the separation layer 102 is formed on the substrate 101. The separation layer 102 is a sacrificial layer that is removed when a functional film formed in a later step is peeled from the substrate 101. As the material of the separation layer 102, a material that generates a gas by causing a reaction such as thermal decomposition when heated is used. Specifically, magnesium carbonate (MgCO ₃ ), calcium carbonate (CaCO ₃ ), strontium carbonate (SrCO ₃ ), barium carbonate (BaCO ₃ ), lithium carbonate (LiCO ₃ ), sodium carbonate (Na ₂ CO ₃ ), carbonate Compounds containing at least one of carbonates such as potassium (K ₂ CO ₃ ), magnesium sulfate (MgSO ₄ ), calcium sulfate (CaSO ₄ ), strontium sulfate (SrSO ₄ ), barium sulfate (BaSO ₄ ), sulfuric acid Among sulfates such as iron (FeSO ₄ ), cobalt sulfate (CoSO ₄ ), nickel sulfate (NiSO ₄ ), zinc sulfate (ZnSO ₄ ), lead sulfate (PbSO ₄ ), bismuth sulfate (Bi (SO ₄ ) ₃ ) compounds containing at least one of strontium nitrate _{(Sr (NO 3) 2)} , nitrate Se Um (CsNO ₃₎ compounds containing at least one of nitrate and the like are used. These compounds decompose and generate gas when heated. For example, when calcium carbonate is heated, a decomposition reaction (CaCO ₃ → CaO + CO ₂ ↑) occurs to generate carbon dioxide (CO ₂ ).

Alternatively, a metal nitride containing at least one element of Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Zr, Mo, Ta, W, V, Cr, Mn, Fe, Co, Ni, A metal sulfide containing at least one element out of Mo, Ta, and W, or a metal carbide such as TiC may be used. These compounds are heated in a predetermined gas atmosphere to react with components in the gas to generate gas, or are heated to adjacent layers, that is, a substrate 101 or a layer to be peeled off 103 described later. Or it reacts with the material contained in 104 and generates gas. For example, when a substrate including an oxide and a separation layer including a metal nitride are used, the separation layer reacts with the oxide substrate to generate nitrogen (N ₂ ).
As a method for forming the separation layer, a known method such as spin coating, sputtering, or CVD (chemical vapor deposition) can be used.

  Here, for the substrate 101 prepared in step S1 and the separation layer 102 formed in step S2, the functional film deposition temperature, the heat treatment temperature, the heat treatment atmosphere, the existing heat treatment equipment, and the like intended for manufacturing It is desirable to select an appropriate material depending on the situation. For example, when manufacturing a PZT (lead zirconate titanate) film, the heat treatment temperature is about 500 ° C., and therefore, a substrate material having a heat resistance of 500 ° C. or higher is selected and around 500 ° C. or higher. It is desirable to select a separation layer material that exhibits a reaction such as thermal decomposition at a low temperature. Further, in addition to such a viewpoint, it is desirable to select a separation layer material in consideration of interaction (diffusion etc.) with a layer to be peeled later.

  Next, in step S <b> 3, as shown in FIG. 2C, a layer to be peeled 103 including a functional film material (functional material) for manufacturing is formed on the separation layer 102. The layer 103 to be peeled is formed by using a known method such as a sputtering method, a CVD method, a sol-gel method, or an aerosol deposition (AD) method. Here, the AD method generates an aerosol in which a raw material powder is dispersed in a gas, and sprays the raw material powder from a nozzle toward the substrate to cause the raw material powder to collide with the lower layer. It is a film-forming method deposited on top, and is also called a jet deposition method or a gas deposition method.

In the present embodiment, the following materials are specifically used as functional materials.
Examples of the material of the functional film used for the memory element include Pb (Zr, Ti) O ₃ , SrBi ₂ (Ta, Nb) ₂ O ₉ , Bi ₄ Ti ₃ O _{12 and the} like.
Pb (Zr, Ti) O ₃ , Pb (Mg _1/3 Nb _2/3 ) O ₃ , Pb (Zn _1/3 Nb _2/3 ) O are used as materials for functional films used for piezoelectric elements such as actuators. ₃ , Pb (Ni _1/3 Nb _2/3 ) O _{3 and the} like, and solid solutions thereof.

Pb (Zr, Ti) O ₃ , (Pb, La) (Zr, Ti) O _3, etc. can be cited as functional film materials used for pyroelectric elements such as infrared sensors.
Examples of the material for the functional film used for passive components such as capacitors include BaSrTiO ₃ , (Pb, La) (Zr, Ti) O _{3, and the} like.
Examples of the material of the functional film used for an optical element such as an optical switch include (Pb, La) (Zr, Ti) O ₃ and LiNbO ₃ .

Examples of a functional film material used for a superconducting element such as a superconducting quantum interference device (SQUID) include YBa ₂ Cu ₃ O ₇ and Bi ₂ Sr ₂ Ca ₂ Cu ₃ O _10. . Here, the SQUID is a highly sensitive magnetic sensor element using superconductivity.
Examples of the material of the functional film used for a photoelectric conversion element such as a solar cell include amorphous silicon and a compound semiconductor.
PdPtMn, CoPtCr, etc. are mentioned as a material of a functional film used for a micro magnetic element such as a magnetic head.
As a material of the functional film used for a semiconductor element such as a TFT, amorphous silicon or the like can be given.

Alternatively, in step S3, the functional material layer is not directly formed on the separation layer 102 as shown in FIG. 2C, but the functional material is interposed via the electrode layer 104a as shown in FIG. A layer may be formed. In this case, the layer 104 to be peeled includes the electrode layer 104a and the functional material layer 104b. The electrode layer 104a may be formed on the separation layer 102 in advance by a known method such as sputtering, vapor deposition, or AD.
The functional film-containing structure according to the present embodiment includes the substrate 101, the separation layer 102, and the layer to be peeled 103 or 104 formed by these steps S1 to S3.

Next, in step S4 of FIG. 1, the functional film-containing structure (FIG. 2C or FIG. 3) is heat-treated. This heat treatment improves the function of the film by promoting grain growth or improving crystallinity in the functional film, and peels off the layer to be peeled 103 or 104 from the separation layer 102 or joins the two. It is performed to facilitate peeling by reducing the strength. For example, when a functional film such as Pb (Zr, Ti) O ₃ , (Pb, La) (Zr, Ti) O ₃ , BaSrTi ₃ is manufactured, the heat treatment is performed at a temperature of 500 ° C. or higher. When a functional film such as SrBi ₂ (Ta, Nb) ₂ O ₉ , Bi ₄ Ti ₃ O ₁₂ , YBa ₂ Cu ₃ O ₇ , Bi ₂ Sr ₂ Ca ₂ Cu ₃ O ₁₀ is manufactured, 700 is used. Heat-treated at a temperature of ℃ or higher.

  As described above, the separation layer 102 is formed of a material whose reaction temperature is the same as or lower than the heat treatment temperature of the functional film (step S2). Therefore, by performing a heat treatment on the functional film, a reaction such as thermal decomposition occurs in the separation layer 102 to generate gas. As a result, as shown in FIG. 4, the separation layer 102 disappears and the layer to be peeled 103 is peeled from the substrate 101. Alternatively, since the bonding strength between the layer to be peeled 103 and the substrate 101 is reduced as a result of the generation of gas, the layer to be peeled 103 is easily and mechanically peeled from the substrate 101 simultaneously with the heat treatment or in a later step. be able to.

  Furthermore, as shown in FIG. 5, the functional film element is completed by forming the electrodes 105 and 106 on both surfaces of the peeled layer 103, that is, the functional film. The electrodes 105 and 106 can be formed by using a known method such as a sputtering method or a vapor deposition method. Note that the electrode 105 formed on the top surface of the layer to be peeled 103 may be formed before the layer to be peeled 103 is peeled from the substrate 101 in step S4. Further, when the functional film-containing structure shown in FIG. 3 is used, it is only necessary to form an electrode on the opposite side of the electrode layer 104a.

Example 1
A calcium hydrogen carbonate solution was applied onto a zirconia (ZrO ₂ ) substrate by spin coating and dried in an atmosphere at 200 ° C. to form a calcium carbonate thin film having a thickness of about 0.2 μm as a separation layer. A platinum (Pt) electrode was formed on the calcium carbonate thin film by vapor deposition, and a PZT film having a thickness of about 50 μm was formed thereon by the AD method. At that time, the substrate was heated to a temperature of 400 ° C. The piezoelectric constant d31 of the PZT film thus obtained was measured and found to be 50 pm / V.

  The zirconia substrate on which this PZT film was formed was heat-treated in an atmosphere at about 950 ° C. Thereby, the calcium carbonate thin film was decomposed to generate gas, and as a result, the PZT film and the platinum electrode were peeled from the zirconia substrate. The piezoelectric constant d31 of this PZT film was 250 pm / V. Thus, it was confirmed that the piezoelectric performance of the PZT film was improved by the heat treatment. Further, no damage such as cracks or peeling was observed on the PZT film and the platinum electrode.

(Example 2)
A titanium nitride film having a thickness of about 0.3 μm was formed as a separation layer on a silicon (Si) substrate having a silicon thermal oxide film (SiO ₂ ) formed on the surface by reactive sputtering. Next, a platinum (Pt) lower electrode was formed on the titanium nitride film by sputtering, and a BaTiO ₃ film having a thickness of about 10 μm was formed thereon by AD. At that time, the substrate temperature was about 400 ° C. Further, an upper electrode of platinum (Pt) was formed on the BaTiO ₃ film by sputtering. The dielectric constant ε of the BaTiO ₃ film thus obtained was measured, and ε = 400.

Next, the silicon substrate on which such a BaTiO ₃ film was formed was heat-treated in an atmosphere of about 800 ° C. Thereby, the titanium nitride film reacted to generate gas, and as a result, the BaTiO ₃ film and the platinum electrodes on both sides thereof were peeled from the silicon substrate. When the dielectric constant ε of the BaTiO ₃ film after the heat treatment was measured, ε = 2000. Thus, it was confirmed that the dielectric properties of the BaTiO ₃ film were enhanced by the heat treatment. Further, when the BaTiO ₃ film and the platinum electrodes on both sides thereof were observed, no damage such as cracks or peeling was confirmed.

  As described above, according to one embodiment of the present invention, by providing a separation layer between the deposition substrate and the functional film, the functional film can be easily peeled off from the deposition substrate by heat treatment, or The joint strength between the two can be reduced. Therefore, an element including a functional film formed by the AD method and further provided with a high function by heat treatment can be disposed on a desired substrate. That is, since a flexible substrate formed of a resin or the like can be used as the substrate, the selection range of the substrate material can be expanded according to the application. In addition, by selecting an appropriate material for the separation layer according to the heat treatment temperature and heat treatment atmosphere for the functional film, the heat treatment step and the peeling step can be performed at the same time, which simplifies the production process and reduces the production cost. Can be reduced.

  In this embodiment, the functional film is formed on the entire surface of the substrate. However, as shown in FIG. 6A, a desired pattern may be formed at least on the layer 103 to be peeled. In that case, in step S3, film formation by an AD method or the like may be performed using a metal mask in which openings having a desired pattern are formed. Alternatively, a resist layer in which an opening having a desired pattern is formed is formed over the separation layer 102, and after the layer to be peeled 103 is formed, the resist may be removed. Alternatively, after the layer to be peeled 103 is formed on the entire surface of the separation layer 102, a pattern may be formed on at least the layer to be peeled 103 by etching. As shown in FIG. 6B, a functional film having a desired shape can be obtained in advance by heating the functional film-containing structure having the pattern formed as described above.

  As a modification of the present embodiment, in the step S4 shown in FIG. 1, in parallel with the heat treatment of the functional film-containing structure, electromagnetic waves such as ultraviolet rays, infrared rays, and microwaves are separated from the separation layer 102 (FIG. 2). ) May be irradiated. For example, since the separation layer 102 is activated by irradiating the separation layer with laser light having a wavelength corresponding to the absorption band of the material forming the separation layer 102, the functional film 103 and the substrate 101 It becomes possible to promote peeling.

  The present invention relates to memory elements including functional materials such as dielectrics, piezoelectrics, pyroelectrics, magnetics, semiconductors, superconductors, passive elements such as piezoelectric elements, pyroelectric elements, capacitors, optical elements, superconductivity It can be used in elements, photoelectric conversion elements, micromagnetic elements, semiconductor elements, and devices to which these elements are applied.

It is a flowchart which shows the manufacturing method of the functional film which concerns on one Embodiment of this invention. It is sectional drawing for demonstrating the manufacturing method of the functional film which concerns on one Embodiment of this invention. It is sectional drawing which shows another structure of a functional film containing structure. It is sectional drawing for demonstrating the manufacturing method of the functional film which concerns on one Embodiment of this invention. It is sectional drawing which shows the functional element containing the functional film manufactured by the manufacturing method of the functional film which concerns on one Embodiment of this invention. 6A is a cross-sectional view showing a functional film-containing structure in which a pattern is formed, and FIG. 6B is a cross-sectional view for explaining a method for producing a functional film using the functional film-containing structure. FIG.

Explanation of symbols

101 Substrate 102 Separation layer 103, 104 Separable layer 104a Electrode layer 104b Functional material layer 105, 106 Electrode

Claims (28)

A substrate,
A separation layer formed using an inorganic material on the substrate;
A layer to be peeled including a functional film disposed on the separation layer and formed using a functional material;
A functional film-containing structure comprising:
The functionality in which the layer to be peeled is peeled from the substrate by heating the separation layer, or the bonding strength between the layer to be peeled and the substrate is lowered by heating the separation layer. Film-containing structure.   The functional film-containing structure according to claim 1, wherein the separation layer includes a material that decomposes when heated to generate gas.   The functional membrane-containing structure according to claim 2, wherein the separation layer includes at least one of carbonate, sulfate, and nitrate. The separation layer comprises magnesium carbonate (MgCO ₃ ), calcium carbonate (CaCO ₃ ), strontium carbonate (SrCO ₃ ), barium carbonate (BaCO ₃ ), lithium carbonate (LiCO ₃ ), sodium carbonate (Na ₂ CO ₃ ), carbonate Potassium (K ₂ CO ₃ ), magnesium sulfate (MgSO ₄ ), calcium sulfate (CaSO ₄ ), strontium sulfate (SrSO ₄ ), barium sulfate (BaSO ₄ ), iron sulfate (FeSO ₄ ), cobalt sulfate (CoSO ₄ ), Nickel sulfate (NiSO ₄ ), zinc sulfate (ZnSO ₄ ), lead sulfate (PbSO ₄ ), bismuth sulfate (Bi (SO ₄ ) ₃ ), strontium nitrate (Sr (NO ₃ ) ₂ ), cesium nitrate (CsNO ₃ ) The functional film-containing structure according to claim 3, comprising at least one of the above.   The functional film containing material of Claim 1 containing the material which reacts with the gas in atmosphere, or the material contained in the said board | substrate or the said to-be-separated layer, and generate | occur | produces gas when the said separation layer is heated. Structure.   The functional film-containing structure according to claim 5, wherein the separation layer includes at least one of metal nitride, metal carbide, and metal sulfide.   The said board | substrate is any one of an oxide single crystal substrate, a semiconductor single crystal substrate, a ceramic substrate, a glass substrate, and a metal substrate, The any one of Claims 1-6. Functional film-containing structure.   The functional film-containing structure according to claim 1, wherein the functional film includes at least one of a piezoelectric material, a pyroelectric material, and a ferroelectric material.   The functional film-containing structure according to claim 1, wherein the functional film includes a superconductive material.   The functional film-containing structure according to claim 1, wherein the functional film contains a magnetic material.   The functional film-containing structure according to claim 1, wherein the functional film contains a semiconductor material.   The functional film-containing structure according to claim 1, wherein the layer to be peeled includes an electrode layer formed on the separation layer and a functional film formed on the electrode layer. body.   The functional film-containing structure according to any one of claims 1 to 12, wherein a predetermined pattern is formed at least on the layer to be peeled. A step (a) of forming a separation layer using an inorganic material on a substrate including a material having heat resistance with respect to a predetermined temperature;
A step (b) of forming a layer to be peeled including a functional film formed using a functional material on the separation layer;
The structure including the substrate, the separation layer, and the layer to be peeled is heat-treated at the predetermined temperature so that the layer to be peeled is peeled from the substrate or the layer to be peeled and the substrate are bonded to each other. Step (c) of reducing the strength;
A method for producing a functional film comprising:   The method for producing a functional membrane according to claim 14, wherein the separation layer includes a material that decomposes when heated to generate gas.   The method for producing a functional membrane according to claim 15, wherein the separation layer includes at least one of carbonate, sulfate, and nitrate. The separation layer comprises magnesium carbonate (MgCO ₃ ), calcium carbonate (CaCO ₃ ), strontium carbonate (SrCO ₃ ), barium carbonate (BaCO ₃ ), lithium carbonate (LiCO ₃ ), sodium carbonate (Na ₂ CO ₃ ), carbonate Potassium (K ₂ CO ₃ ), magnesium sulfate (MgSO ₄ ), calcium sulfate (CaSO ₄ ), strontium sulfate (SrSO ₄ ), barium sulfate (BaSO ₄ ), iron sulfate (FeSO ₄ ), cobalt sulfate (CoSO ₄ ), Nickel sulfate (NiSO ₄ ), zinc sulfate (ZnSO ₄ ), lead sulfate (PbSO ₄ ), bismuth sulfate (Bi (SO ₄ ) ₃ ), strontium nitrate (Sr (NO ₃ ) ₂ ), cesium nitrate (CsNO ₃ ) The method for producing a functional film according to claim 16, comprising at least one of .   The functionality according to claim 14, wherein the separation layer includes a material that generates a gas by reacting with a gas in an atmosphere and / or a material contained in the substrate or the layer to be peeled by being heated. A method for producing a membrane.   The method for producing a functional film according to claim 18, wherein the separation layer includes at least one of a metal nitride, a metal carbide, and a metal sulfide.   20. The substrate according to any one of claims 14 to 19, wherein the substrate includes any one of an oxide single crystal substrate, a semiconductor single crystal substrate, a ceramic substrate, a glass substrate, and a metal substrate. Functional film-containing structure.   The method for producing a functional film according to any one of claims 14 to 20, wherein the functional film includes at least one of a piezoelectric material, a pyroelectric material, and a ferroelectric material.   The method for producing a functional film according to claim 14, wherein the functional film includes a superconductive material.   The method for producing a functional film according to claim 14, wherein the functional film contains a magnetic material.   The method for producing a functional film according to claim 14, wherein the functional film contains a semiconductor material.   The functional film according to any one of claims 14 to 24, wherein the step (b) includes forming an electrode layer on the separation layer and forming a functional film on the electrode layer. Manufacturing method.   The production of a functional membrane according to any one of claims 14 to 25, wherein the step (b) includes forming an electrode layer on the functional membrane formed directly or indirectly on the separation layer. Method.   27. The production of a functional film according to any one of claims 14 to 26, wherein the step (c) includes heat-treating a structure including the substrate, the separation layer, and the layer to be peeled at 500 ° C. or higher. Method. The method for producing a functional film according to any one of claims 14 to 27, further comprising a step of forming a pattern by etching on at least the layer to be peeled after the step (b).

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