JP2006339665A - Apparatus for manufacturing semiconductor substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a semiconductor substrate suitable for a small-scaled manufacturing line, which can produce various products in small amounts, cope with a large change of the number of products, produce products having a short product life, and is capable of changing the function flexibly or updating the apparatus. <P>SOLUTION: The apparatus for manufacturing the semiconductor substrate is equipped with a loader/unloader 120, a plurality of treatment units such as a plating film-forming film unit 113, and a transfer mechanism (robots 131-134) which transfers the semiconductor substrate between the units. The mounting portion of each unit has a guide. Each unit can be loaded to the apparatus for manufacturing the semiconductor substrate, or removed from the apparatus for manufacturing the semiconductor substrate, and exchanged for other units, by moving along the guide. The apparatus for manufacturing the semiconductor substrate is comprised by freely combining the units needed in the semiconductor manufacturing processes. And the units performing distinct treatments in the apparatus for manufacturing the semiconductor substrate can be exchanged each other. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor substrate manufacturing apparatus for filling circuit pattern grooves and / or holes formed on a semiconductor substrate surface with a metal plating film, and forming the circuit wiring by removing the metal plating film while leaving the filling portion. It is about.

  As a material for forming a wiring circuit on a semiconductor substrate, aluminum or an aluminum alloy is generally used. However, as the degree of integration of semiconductor devices increases, a material with higher conductivity should be adopted as the wiring material. Is required. For this reason, the semiconductor substrate surface on which the circuit pattern groove and / or hole is formed is plated, and the circuit pattern groove and / or hole is filled with Cu (copper) or an alloy thereof, and the filled portion is removed. Then, a method of removing the Cu or its alloy and forming a circuit wiring has been proposed.

A method of forming the circuit wiring will be described with reference to FIG. On the semiconductor substrate W, as shown in FIG. 1A, a conductive layer 101a is formed on a semiconductor substrate 101 on which semiconductor elements are formed, and an insulating film 102 made of SiO ₂ is deposited on the conductive layer 101a. Then, a contact hole 103 and a wiring groove 104 are formed by a lithography / etching technique, a barrier layer 105 made of TiN or the like is formed thereon, and a seed layer 107 is formed thereon as a power feeding layer for electrolytic plating.

  Then, as shown in FIG. 1B, the surface of the semiconductor substrate W is plated with Cu so that the contact hole 103 or the groove 104 of the semiconductor substrate 101 is filled with Cu, and the insulating film 102 is plated with Cu. A film layer 106 is deposited. After that, the surface of the Cu plating film layer 106 filled in the contact hole 103 and the wiring groove 104 is removed by chemical mechanical polishing (CMP) to remove the Cu plating film layer 106 and the barrier layer 105 on the insulating film 102. And the surface of the insulating film 102 are substantially flush with each other. Thereby, as shown in FIG.1 (c), the wiring which consists of Cu plating film layer 106 is formed.

  Here, since the barrier layer 105 is formed so as to cover almost the entire surface of the insulating film 102 and the seed layer 107 is formed so as to cover almost the entire surface of the barrier layer 105, the bevel (outer peripheral portion) of the semiconductor substrate W as shown in FIG. In some cases, a copper film as the seed layer 107 exists, or although not shown, copper is formed on the inner edge (outer peripheral portion) of the bevel of the semiconductor substrate W and remains without being polished.

  Copper, for example, is easily diffused into the insulating film 102 in a semiconductor manufacturing process such as annealing, thereby deteriorating the insulating property, or the adhesiveness with the film to be formed next is impaired, and may cause separation from there. Therefore, it is required to be completely removed from the substrate at least before film formation. In addition, the outer peripheral portion of the substrate other than the circuit formation (here, the outer peripheral portion is a region where the edges and bevels of the semiconductor substrate W are combined, or any portion of the edge bevel. Edge: 5 mm from the outer peripheral edge of the substrate. The copper film deposited or attached to the front and back surface portions of the semiconductor substrate W, the bevel: the side surface portion of the semiconductor substrate W and the portion having a curved section within 0.5 mm from the outer peripheral edge) is not only unnecessary. In the subsequent steps of transporting, storing and processing the semiconductor substrate W, it may cause cross contamination, so it is necessary to completely remove it immediately after the copper film forming step and the CMP step.

  In recent plating apparatuses that perform Cu plating for copper wiring and polishing apparatuses that perform chemical mechanical polishing, a so-called dry-in / dry-out configuration in which a substrate is put in a dry state and put out in a dry state is employed. As a configuration of the apparatus, after each processing step, for example, plating or polishing, particles are removed by a cleaning unit and a spin drying unit, and the semiconductor substrate is taken out in a dried state. As described above, since the plating apparatus and the polishing apparatus have many common processes and are inherently continuous processes, the initial cost and running cost of the apparatus increase, and a large installation space is required to install both apparatuses. There was a problem of requiring a long processing time.

  Currently, the driving force of semiconductor devices is changing from workstations and personal computers to digital information home appliances (game machines, mobile phones, digital still cameras, DVDs, car navigation devices, digital video cameras, etc.). Therefore, in LSI manufacturing, it is necessary to cope with a change from a general-purpose LSI used in a personal computer or the like to a system LSI requiring digital information home appliances.

  These system LSIs are characterized by a large variety, a small amount of production, large fluctuations in the number of units produced, and a short product life compared to general-purpose LSIs. In addition, in order to reduce the equipment cost of digital information home appliances, it is essential to reduce the manufacturing cost of LSI. Semiconductor manufacturing factories are also required to have many types of small-scale lines based on the idea of large-scale lines, and to minimize the production period from the amount of production. Correspondingly, future semiconductor device manufacturing responds quickly to the needs of equipment manufacturers, puts them on the production line as quickly as possible, and changes in demand make it possible to flexibly change functions or update equipment. It is required to be able to do it.

  The present invention has been made in view of the above points, can reduce the initial cost and running cost of the apparatus, does not require a large installation space, can form circuit wiring in a short processing time, and causes cross contamination. An object of the present invention is to provide a semiconductor substrate manufacturing apparatus and a processing method in which a copper film does not remain on an edge bevel portion.

  In addition, the present invention is a small-scale and flexible function change that manufactures a variety of products such as system LSIs used in digital information home appliances, a variety of products, a small amount of production, a large variation in the number of production, and a short product life, Alternatively, an object of the present invention is to provide a semiconductor substrate manufacturing apparatus suitable for a manufacturing line capable of updating the apparatus.

  In order to solve the above-mentioned problems, the invention according to claim 1 is a metal plating for forming a metal plating film on a semiconductor substrate carried in and a carrying-in / out unit for carrying in and out a semiconductor substrate having a circuit formed on the surface in a dry state. A film deposition unit; a bevel / back surface cleaning unit for cleaning a bevel and a back surface of a semiconductor substrate after plating film deposition; a lid plating unit for forming a lid plating film layer on the semiconductor substrate; A cleaning unit for cleaning a surface, a barrier layer film forming unit for forming a barrier layer on the semiconductor substrate, a seed layer film forming unit for forming a seed layer on the substrate, a film thickness measurement of the semiconductor substrate, and the film thickness Each unit consisting of an aligner / film thickness measurement unit for notch alignment for measurement and an annealing unit for annealing the semiconductor substrate can be selectively installed. Then, in the semiconductor substrate manufacturing apparatus having a transport mechanism for transporting the semiconductor substrate between the units, the mounting portion of each unit has a guide, and each unit moves along the guide. The semiconductor manufacturing apparatus can be mounted on or removed from the semiconductor manufacturing apparatus and replaced with another unit, and the semiconductor manufacturing apparatus is configured by freely combining units necessary for the semiconductor manufacturing process. The present invention is characterized in that the units for performing different processes in the manufacturing apparatus can be exchanged.

  According to a second aspect of the present invention, in the semiconductor substrate manufacturing apparatus according to the first aspect of the present invention, each unit is configured to have the same frontage size facing the transport mechanism.

  According to a third aspect of the present invention, in the semiconductor substrate manufacturing apparatus according to the first or second aspect, the mounting portion of each unit has a rail, the lower surface of each unit has a roller, and the roller Each unit is mounted or removed by moving the unit along the rail.

  4. The semiconductor substrate manufacturing apparatus according to claim 4, wherein each unit has a roller and a screw at a bottom thereof, and the screw is adjusted by adjusting the screw. The roller is protruded from the bottom of the unit only when the unit is moved, and the roller is retracted when the unit is fixed.

  According to a fifth aspect of the present invention, in the semiconductor substrate manufacturing apparatus according to any one of the first to fourth aspects, a control unit is provided, and the control unit performs process processing on each of the mounted units. This is characterized in that the processing path of the semiconductor substrate can be set freely.

  And a film thickness measuring unit having any one or both of a film thickness measuring machine for measuring the film thickness of the film formed on the semiconductor substrate and a detection sensor for detecting the surface state of the film. To do.

  By providing a film thickness measuring unit having either one or both of the film thickness measuring machine and the detection sensor, either or both of the film thickness and the film surface state are measured and detected, and desired plating is performed. The plating time, polishing time and annealing time for obtaining the film thickness can be adjusted.

  Moreover, by making each unit interchangeable, the function update of the entire semiconductor substrate manufacturing apparatus can be realized in a short time and at a low cost.

  In addition, the metal plating film deposition unit can perform the plating process and the cleaning process without moving the semiconductor substrate by performing the plating process and the cleaning process while the semiconductor substrate is held by the substrate holder. Do not bring pollutants into the next process.

  Further, the semiconductor substrate manufacturing apparatus according to the present invention includes a carry-in / carry-in unit for carrying in and out a semiconductor substrate in which a groove and / or hole for a wiring pattern is formed on the surface and a barrier layer is formed thereon in a dry state. A seed layer film forming unit for forming a power feeding seed layer on the semiconductor substrate by electroless plating; and a metal plating film forming unit for forming a metal plating film layer on the semiconductor substrate on which the power feeding seed layer is formed by electrolytic plating; A polishing portion for polishing and removing the metal plating film layer, the power supply seed layer and the barrier layer, leaving a portion filled in the groove and / or hole of the semiconductor substrate on which the metal plating film layer is formed, and the semiconductor from which each layer is removed A cleaning unit for cleaning and drying the substrate and a transfer mechanism for transferring the semiconductor substrate between the units are provided.

  By configuring the semiconductor substrate manufacturing apparatus as described above, a power supply seed layer and a metal plating film layer are formed on a semiconductor substrate on which a wiring pattern groove and / or hole is formed on the surface and a barrier layer is formed thereon. Then, the power supply seed layer and the metal plating film layer are polished and removed, washed and dried to continuously form a circuit wiring with a single apparatus.

  The semiconductor substrate manufacturing apparatus according to the present invention also includes a carry-in / out unit for carrying in and out a semiconductor substrate having a wiring pattern groove and / or hole formed on a surface thereof in a dry state, and a barrier layer on the semiconductor substrate carried in. A barrier layer film forming portion to be formed; a seed layer film forming portion for forming a power supply seed layer on the semiconductor substrate on which the barrier layer is formed by electroless plating; and a metal plating film on the semiconductor substrate on which the power supply seed layer is formed A metal plating film forming portion for forming the layer by electrolytic plating, and a metal plating film layer, a power supply seed layer, and a barrier layer, leaving a portion filled in the groove and / or hole of the semiconductor substrate on which the metal plating film layer is formed A polishing section for polishing and removing the semiconductor substrate, a cleaning section for cleaning and drying the semiconductor substrate from which each layer has been removed, and a transfer mechanism for transferring the semiconductor substrate between the sections.

  Further, the semiconductor substrate manufacturing apparatus according to the present invention includes a film thickness measuring unit that measures the film thickness of the metal plating film layer after the formation of the metal plating film layer and a residual film measurement unit that measures the remaining film after polishing removal. And a recording means for recording the results measured by the film thickness measuring unit and the residual film measuring unit.

  Further, the semiconductor substrate manufacturing apparatus according to the present invention is provided with a film thickness measuring unit for measuring the film thickness of each layer, measures the initial film thickness of each layer, and records the measurement result in the recording means. To do.

  By providing recording means as described above, the processing time of the next process is controlled by recording the film thickness measured by the film thickness measurement unit and the residual film measurement unit, the residual film, and the initial film thickness measurement results of each layer. It can be used as data for determining the quality of each processing step, the quality of a semiconductor substrate for which circuit wiring formation processing has been completed, and the like.

  The semiconductor substrate manufacturing apparatus according to the present invention includes a carry-in / out unit for carrying in and out a semiconductor substrate having a wiring pattern groove and / or hole formed on a surface thereof, and a metal plating film layer on the carried-in semiconductor substrate. A metal plating unit for forming the semiconductor substrate, a polishing unit for polishing the metal plating film on the semiconductor substrate, a cleaning unit for cleaning and drying the semiconductor substrate on which the metal plating film is polished, and a transport mechanism for transporting the semiconductor substrate And the metal plating unit and the cleaning unit can be freely replaced.

  As described above, the metal plating unit and the cleaning unit can be interchanged easily, so it is possible to easily respond to changes in the substrate processing process, and to update the functions of the entire semiconductor substrate manufacturing apparatus in a short time and at low cost. .

  The semiconductor substrate manufacturing apparatus according to the present invention includes a bevel etching unit for etching and removing a metal plating film formed on an edge (bevel) portion of a semiconductor substrate, and the metal plating unit, the cleaning unit, and the bevel etching unit are replaced. Is freely configured.

  By providing the bevel etching unit, it is possible to remove the metal plating film on the edge and the bevel part causing cross contamination, and the metal plating unit, the cleaning unit, and the bevel etching unit can be freely replaced. In the same manner, the function update of the entire semiconductor substrate manufacturing apparatus can be performed in a short time and at a low cost.

  In addition, the semiconductor substrate manufacturing apparatus according to the present invention can save time for movement between apparatuses by integrating the seed layer deposition unit with the plating unit, can improve throughput, and can be coated without contamination. The configuration is made possible.

  In addition, the semiconductor substrate manufacturing apparatus according to the present invention has a configuration in which the barrier layer film forming unit is integrated with the plating unit to save time for movement between apparatuses and to improve throughput.

  The semiconductor substrate manufacturing apparatus according to the present invention includes a carry-in / out unit for carrying in and out a semiconductor substrate having a wiring pattern groove and / or hole formed on the surface thereof in a dry state, and a metal plating film on the carried-in semiconductor substrate. A metal plating unit for forming the semiconductor substrate, a polishing unit for polishing the metal plating film on the semiconductor substrate, a cleaning unit for cleaning and drying the semiconductor substrate on which the metal plating film has been polished, and a transport mechanism for transporting the semiconductor substrate The metal plating unit includes a cathode portion having a substrate holding portion that holds the substrate with the surface to be plated facing upward, an electrode arm portion that is disposed above the cathode portion and includes an anode, and a substrate A plating solution injection means for injecting a plating solution into a space between the surface to be plated of the substrate held by the holding portion and the anode of the electrode arm portion close to the surface to be plated; Characterized in that it.

  The cathode part of the metal plating unit has a substrate holding part that holds the substrate horizontally with the surface to be plated facing upward, so that plating treatment and other treatments such as pretreatment and cleaning / drying treatment incidental to the plating treatment are performed. It can be done before or after processing.

  The semiconductor substrate manufacturing apparatus according to the present invention includes a carry-in / out unit for carrying in and out a semiconductor substrate having a wiring pattern groove and / or hole formed on the surface thereof in a dry state, and a metal plating film on the carried-in semiconductor substrate. A metal plating unit for forming the semiconductor substrate, a polishing unit for polishing the metal plating film on the semiconductor substrate, a cleaning unit for cleaning and drying the semiconductor substrate on which the metal plating film has been polished, and a transport mechanism for transporting the semiconductor substrate In addition, the metal plating unit is characterized in that it can perform pre-coating treatment, plating treatment, and water washing treatment.

  As described above, the metal plating unit can perform pre-coating treatment, plating treatment and water washing treatment. In particular, since the water washing treatment after the plating treatment is performed in the metal plating unit, the plating solution is not brought into another unit.

  In addition, the semiconductor substrate manufacturing apparatus according to the present invention includes a carry-in / out unit for carrying in and out a semiconductor substrate having a wiring pattern groove and / or hole formed on the surface thereof in a dry state, and a barrier layer on the carried-in semiconductor substrate. A barrier layer forming unit for forming a film, a seed layer forming unit for forming a seed layer film on the barrier layer film, a metal plating unit for forming a metal plating film on the seed layer film, and an edge portion of the semiconductor substrate A bevel etching unit for etching and removing the metal film formed on the substrate, an annealing unit for annealing the metal plating film, a polishing unit for polishing the metal plating film and / or the seed layer film on the semiconductor substrate, and a metal plating film Cleaning and drying unit that cleans and dries the polished semiconductor substrate, plating unit that forms a lid plating film on the metal plating film, and transports the semiconductor substrate A barrier layer deposition unit, a seed layer deposition unit, a metal plating unit, a bevel etching unit, an annealing unit, a polishing unit, a cleaning unit, and a lid plating unit. It is characterized by being free.

  As described above, since the units can be freely replaced, it is possible to easily cope with various changes in the substrate processing process, and to update the functions of the entire semiconductor substrate manufacturing apparatus in a short time and at a low cost.

  Further, the semiconductor substrate manufacturing method in the semiconductor substrate manufacturing apparatus according to the present invention is a semiconductor substrate having a wiring pattern groove and / or hole formed on the surface thereof and a barrier layer formed thereon by a loading / unloading mechanism in a dry state. A feeding seed layer is formed on the carried semiconductor substrate, a metal plating film layer is formed thereon, and the grooves and / or holes of the semiconductor substrate on which the metal plating film layer is formed are filled. The metal plating film layer, the power supply seed layer, and the barrier layer are polished and removed, leaving portions, and the semiconductor substrate from which each layer has been removed is washed and dried, and then transferred to the loading / unloading mechanism in a dry state. .

  By performing the semiconductor substrate manufacturing method as described above, a power supply seed layer and a metal plating film layer are applied to a semiconductor substrate on which a wiring pattern groove and / or hole is formed on the surface and a barrier layer is formed thereon. Since the power supply seed layer and the metal plating film layer are polished and removed, washed and dried to continuously form the circuit wiring, the circuit wiring can be formed in a short processing time.

  The semiconductor substrate manufacturing method in the semiconductor substrate manufacturing apparatus according to the present invention includes a semiconductor substrate having a wiring pattern groove and / or hole formed on a surface thereof carried in a dry state by a loading / unloading mechanism, A barrier layer is formed on a semiconductor substrate, a power supply seed layer is formed thereon, a metal plating film layer is further formed thereon, and the grooves and / or holes of the semiconductor substrate on which the metal plating film layer is formed are filled. The metal plating film layer, the power feeding seed layer, and the barrier layer are polished and removed while leaving the portions, and the semiconductor substrate from which each layer has been removed is washed and dried, and then passed to the loading / unloading mechanism in a dry state. And

  By performing the semiconductor substrate manufacturing method as described above, a barrier layer, a power seed layer and a metal plating film layer are applied to a semiconductor substrate having a wiring pattern groove and / or hole formed on the surface, and the power seed layer In addition, since the metal plating film layer is polished and removed, washed and dried to continuously form the circuit wiring, the circuit wiring can be formed in a short processing time.

  According to the invention described in each claim, the semiconductor substrate manufacturing apparatus includes a guide in a mounting portion of each unit, and each unit is mounted on the semiconductor manufacturing apparatus by moving along the guide. It can be removed from the semiconductor manufacturing equipment and replaced with other units. The semiconductor manufacturing equipment can be configured by freely combining units required in the semiconductor manufacturing process, and different processes in the semiconductor manufacturing equipment can be performed. Since the units can be exchanged, the following excellent effects are obtained.

  ・ Even if a new process is introduced by replacing some units with new units without replacing the entire device, the function of the entire device can be updated in a short time and at a low cost. . In particular, in the current situation where it has become important to have many kinds of small-scale lines in response to the manufacture of semiconductor devices that are produced in a large variety and in small quantities in recent years, the necessary units can be easily and freely combined.

  It is also possible to use a plurality of semiconductor substrate manufacturing apparatuses in a factory mainly in the layout of the semiconductor substrate manufacturing apparatus, and to change the configuration of units mounted on each of them in different wiring processes. If a large amount of production is required temporarily, it is possible to change the semiconductor substrate manufacturing apparatus composed of the same unit immediately.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is a diagram showing a planar configuration of a semiconductor substrate manufacturing apparatus according to the present invention. The semiconductor substrate manufacturing apparatus includes a load / unload unit 1, a Cu plating film forming unit 2, a first robot 3, a third cleaning machine 4, a reversing machine 5, a reversing machine 6, a second cleaning machine 7, and a second robot 8. The first cleaning machine 9, the first polishing apparatus 10, and the second polishing apparatus 11 are arranged. In the vicinity of the first robot 3, a film thickness measuring machine 12 before and after plating for measuring the film thickness before and after plating and a dry state film thickness measuring machine 13 for measuring the film thickness of the dried semiconductor substrate W after polishing are arranged. Yes.

  The film thickness measuring machine 12 before and after plating and the dry film thickness measuring machine 13, particularly the dry film thickness measuring machine 13, may be provided in the hand of the first robot 3, as will be described in detail later. Although not shown in the drawings, the film thickness measuring machine 12 before and after plating is provided at the semiconductor plate carry-in / out port of the Cu plating film unit 2 so as to measure the film thickness of the semiconductor substrate W carried in and the film thickness carried out. Also good.

  The first polishing apparatus 10 includes a polishing table 10-1, a top ring 10-2, a top ring head 10-3, a film thickness measuring device 10-4, and a pusher 10-5, and the second polishing apparatus 11 is a polisher. A table 11-1, a top ring 11-2, a top ring head 11-3, a film thickness measuring device 11-4, and a pusher 11-5 are provided.

  As shown in FIG. 1, a cassette 1-1 containing a semiconductor substrate W in which a contact hole 103 and a wiring groove 104 are formed and a seed layer 107 is formed thereon is used as a load port of the load / unload unit 1. Place. The first robot 3 takes out the semiconductor substrate W from the cassette 1-1 and loads it into the Cu plating film forming unit 2 to form the Cu plating film layer 106. At that time, the film thickness of the seed layer 107 is measured by the film thickness measuring machine 12 before and after plating. The Cu plating film layer 106 is formed by first performing a hydrophilic treatment on the surface of the semiconductor substrate W and then performing Cu plating. After the formation of the Cu plating film layer 106, rinsing or cleaning is performed in the Cu plating film forming unit 2. If time allows, you may dry. A configuration example and operation of the Cu plating film forming unit 2 will be described in detail later.

  When the semiconductor substrate W is taken out from the Cu plating film forming unit 2 by the first robot 3, the film thickness of the Cu plating film layer 106 is measured by the film thickness measuring machine 12 before and after plating. The measurement method is the same as the measurement of the seed layer 107, but the measurement result is recorded as the recording data of the semiconductor substrate in a recording device (not shown), and the abnormality determination of the Cu plating film forming unit 2 is performed. Also used. After the film thickness measurement, the first robot 3 passes the semiconductor substrate W to the reversing machine 5 and reverses the reversing machine 5 (the surface on which the Cu plating film layer 106 is formed is down). Polishing by the first polishing apparatus 10 and the second polishing apparatus 11 includes a series mode and a parallel mode. Hereinafter, polishing in the series mode and the parallel mode will be described.

[Series mode polishing]
The series mode polishing is polishing in which primary polishing is performed by the polishing apparatus 10 and secondary polishing is performed by the polishing apparatus 11. The second robot 8 picks up the semiconductor substrate W on the reversing machine 5 and places the semiconductor substrate W on the pusher 10-5 of the polishing apparatus 10. The top ring 10-2 adsorbs the semiconductor substrate W on the pusher 10-5, and as shown in FIG. 3, the Cu plating film layer 106 formation surface of the semiconductor substrate W on the polishing surface 10-1a of the polishing table 10-1. Is pressed to perform primary polishing. In the primary polishing, the Cu plating film layer 106 is basically polished. The polishing surface 10-1a of the polishing table 10-1 is made of foamed polyurethane such as IC1000, or one in which abrasive grains are fixed or impregnated. The Cu plating film layer 106 is polished by the relative movement of the polishing surface 10-1a and the semiconductor substrate W.

  Silica, alumina, ceria or the like is used for the abrasive grains for polishing the Cu plating film layer 106 or the slurry ejected from the slurry nozzle 10-6, and the oxidizing material is mainly acidic such as hydrogen peroxide. A material that oxidizes Cu is used. In order to keep the temperature at a predetermined value in the polishing table 10-1, a temperature adjusting fluid pipe 28 is connected to allow the liquid adjusted to the predetermined temperature to pass. In order to keep the temperature of the slurry at a predetermined value, the slurry nozzle 10-6 is provided with a temperature regulator 10-7. Or although illustration is abbreviate | omitted, the water etc. at the time of dressing are temperature-controlled. Thus, the chemical reaction rate is kept constant by maintaining the temperature of the polishing table 10-1, the temperature of the slurry, the temperature of water at the time of dressing, etc. at predetermined values. In particular, the polishing table 10-1 is made of ceramic such as alumina or SiC having good thermal conductivity.

  For detecting the end point of the primary polishing, an eddy current film thickness measuring device 10-8 or an optical film thickness measuring device 10-9 provided on the polishing table 10-1 is used. When the thickness measurement or the surface detection of the barrier layer 105 is performed, and the film thickness of the Cu plating film layer 106 is 0 or the surface of the barrier layer 105 is detected, the end point of polishing is determined.

  After polishing of the Cu plating film layer 106, the semiconductor substrate W is returned onto the pusher 10-5 by the top ring 10-2. The second robot 8 picks up the semiconductor substrate W and puts it in the first cleaning machine 9. At this time, chemicals may be sprayed onto the front and back surfaces of the semiconductor substrate W on the pusher 10-5 to remove particles or make it difficult to stick.

  In the first cleaning machine 9, scrub cleaning is performed on the front and back surfaces of the semiconductor substrate W with PVA (polyvinyl chloride) sponge rolls 9-2 and 9-2 using the cleaning machine 9 configured as shown in FIG. The cleaning water ejected from the nozzle 9-4 is mainly pure water, but it is possible to adjust the pH after mixing the surface active material, chelating material, or both to match the zeta potential of copper oxide. Good. Moreover, the ultrasonic vibration element 9-3 may be provided in the nozzle 9-4, and ultrasonic vibration may be applied to the jetted cleaning water. Reference numeral 9-1 denotes a rotating roller for rotating the semiconductor substrate W in a horizontal plane.

  After the completion of the cleaning, the second robot 8 picks up the semiconductor substrate W and places the semiconductor substrate W on the pusher 11-5 of the second polishing apparatus 11. The top ring 11-2 adsorbs the semiconductor substrate W on the pusher 11-5, and the surface on which the barrier layer 105 of the semiconductor substrate W is formed is pressed against the polishing surface of the polishing table 11-1 to perform secondary polishing. Do. The structures of the polishing table 11-1, the top ring 11-2, and the like are the same as those shown in FIG. In this secondary polishing, the barrier layer 105 is polished. However, there are cases where the Cu film and oxide film remaining in the primary polishing are also polished.

  The polishing surface 11-1a of the polishing table 11-1 is made of foamed polyurethane such as IC1000, or one in which abrasive grains are fixed or impregnated, and is polished by relative movement of the polishing surface 11-1a and the semiconductor substrate W. . At this time, silica, alumina, ceria or the like is used for the abrasive grains or slurry. The chemical solution is adjusted according to the type of film to be polished.

Detection of the end point of the secondary polishing are mainly using the film thickness measuring instrument 10-9 of the optical shown in FIG. 3 to measure the thickness of the barrier layer 105, since the or SiO ₂ film thickness becomes 0 This is performed by detecting the surface of the insulating film 102. Further, a film thickness measuring device with an image processing function is used for the film thickness measuring device 11-4 provided in the vicinity of the polishing table 11-1, and an oxide film is measured and left as a processing record of the semiconductor substrate W. It is determined whether or not the semiconductor substrate W after the next polishing can be transferred to the next process. In addition, if the secondary polishing end point has not been reached, the semiconductor substrate is manufactured so that repolishing is performed or if the polishing exceeds a specified value due to some abnormality, the next polishing is not performed so as not to increase defective products. Stop the device.

  After the secondary polishing, the semiconductor substrate W is moved to the pusher 11-5 by the top ring 11-2. The semiconductor substrate W on the pusher 11-5 is picked up by the second robot 8. At this time, the chemical solution may be sprayed onto the front and back surfaces of the semiconductor substrate W on the pusher 11-5 to remove particles or make it difficult to stick.

  The second robot 8 carries the semiconductor substrate W into the second cleaning machine 7 and performs cleaning. The structure of the 2nd washing machine 7 is also the same composition as the 1st washing machine 9 shown in FIG. The surface of the semiconductor substrate W is mainly scrubbed with a PVA sponge roll 9-2 using pure water, a surfactant, a chelating material, or a pH adjusting material for particles. On the back surface of the semiconductor substrate W, a strong chemical solution such as DHF is ejected from the nozzle 9-5, and if there is no problem of etching the diffused Cu, or if there is no problem of diffusion, the PVA sponge roll is used using the same chemical solution as the surface. Scrub with 9-2.

  After completion of the cleaning, the semiconductor substrate W is picked up by the second robot 8, transferred to the reversing machine 6, and reversed by the reversing machine 6. The inverted semiconductor substrate W is picked up by the first robot 3 and placed in the third cleaning machine 4. In the third cleaning machine 4, the surface of the semiconductor substrate W is cleaned by jetting megasonic water excited by ultrasonic vibration. At that time, pure water, a surfactant, a chelating material, or a pH adjusting material may be added to clean the surface with a known pencil type sponge. Thereafter, the semiconductor substrate W is dried by spin drying.

  As described above, when the film thickness is measured by the film thickness measuring device 11-4 provided in the vicinity of the polishing table 11-1, the film is stored in the cassette mounted on the unload port of the load / unload unit 1 as it is.

  When performing multilayer film measurement, since it is necessary to perform measurement in a dry state, the film thickness is measured once by entering the film thickness measuring machine 13. Therefore, it is determined whether to leave the processing record of the semiconductor substrate W or take it to the next process. If the end point has not been reached, feedback is performed on the semiconductor substrate W to be processed later, or if polishing is performed beyond a specified value due to some abnormality, the next polishing is not performed so as not to increase defects. Stop the device.

[Parallel mode polishing]
The parallel mode polishing is a case where the semiconductor substrate W on which the Cu plating film layer 106 is formed by the Cu plating film forming unit 2 is polished in parallel by each of the polishing apparatuses 10 and 11. The second robot 8 picks up the semiconductor substrate W reversed by the reversing machine 5 as described above, and places the semiconductor substrate W on the pusher 10-5 or 11-5. The top ring 10-2 or 11-2 adsorbs the semiconductor substrate W and abuts and presses the surface on which the Cu plating film layer 106 of the semiconductor substrate W is formed on the polishing surface of the polishing table 10-1 or 11-1. I do. As described above, the polishing surface 10-1a of the polishing tables 10-1 and 11-1 is made of polyurethane foam such as IC1000, or one in which abrasive grains are fixed or impregnated, and the polishing surface and the semiconductor substrate W are relative to each other. Polished by movement.

  Silica, alumina, ceria, or the like is used for the abrasive grains or slurry, and a material that oxidizes Cu with a mainly acidic material such as hydrogen peroxide is used as the oxidizing material. The polishing tables 10-1 and 11-1, slurry, water at the time of dressing, and the like are temperature-controlled and the chemical reaction rate is kept constant as described above. In particular, the polishing tables 10-1 and 11-1 are made of ceramic such as alumina or SiC having good thermal conductivity.

  Polishing at the polishing table 10-1 or 11-1 is performed through a plurality of steps. In the first step, the Cu plating film layer 106 is polished. The main purpose at this time is removal of a step on the surface of the Cu plating film layer 106, and a slurry having excellent step characteristics is used. For example, a 100 μm line whose initial step 700 nm can be reduced to 20 nm or less is used. At this time, as the second step, the pressing load for pressing the semiconductor substrate W is set to be less than half of the first step, and polishing conditions for improving the step characteristics are added. For the end point detection in the second step, the eddy current measuring machine 10-8 shown in FIG. 3 is used when the Cu plating film layer 106 remains at 500 nm. In the case where the Cu plating film layer 106 is less than that or when polishing to the surface of the barrier layer 105, An optical film thickness measuring device 10-9 is used.

  The polishing of the barrier layer 105 is performed after the polishing of the Cu layer of the Cu plating film layer 106 and the seed layer 107 is completed. Usually, when the barrier layer 105 cannot be polished with the slurry used first, it is necessary to change the composition. Therefore, when the second step is completed, the slurry used in the first and second steps remaining on the polishing surface of the polishing table 10-1 or 11-1 is mixed with water polish, water jet, pure water and gas. Remove with the atomizer and dresser, and proceed to the next step.

  FIG. 5 is a diagram showing a configuration of a cleaning mechanism for cleaning the polishing surface 10-1a of the polishing table 10-1. As shown in the drawing, a plurality (four in the figure) of mixed injection nozzles 10-11a to 10-11d for mixing and injecting pure water and nitrogen gas are arranged on the upper part of the polishing table 10-1. Nitrogen gas pressure-adjusted by the regulator 16 from the nitrogen gas supply source 14 is supplied to the mixing injection nozzles 10-11a to 10-11d through the air operator valve 18, and the pressure is supplied from the pure water supply source 15 by the regulator 17. The adjusted pure water is supplied through the air operator valve 19.

  The mixed gas and liquid are changed by the jet nozzle, respectively, by changing parameters such as the pressure and temperature of the gas, the gas, and the nozzle shape. ) Solidified fine particles solidified by liquid, (3) Vaporized by evaporation of liquid (these (1), (2), and (3) are referred to herein as atomized or atomized), liquid-derived components and gas The mixture of components is sprayed with a predetermined direction toward the polishing surface of the polishing table 10-1.

  When the polishing surface 10-1a is regenerated (dressing) by the relative movement of the polishing surface 10-1a and the dresser 10-10, a mixed fluid of pure water and nitrogen gas is mixed from the mixed injection nozzles 10-11a to 11-11d. 10-1a is sprayed and washed. The pressure of nitrogen gas and the pressure of pure water can be set independently. In this embodiment, manual drive regulators are used for both the pure water line and the nitrogen line, but regulators that can change the set pressure based on an external signal may be used. As a result of cleaning the polishing surface 10-1a using the cleaning mechanism, the slurry remaining on the polishing surface in the first polishing step and the second polishing step can be removed by cleaning for 5 to 20 seconds. did it. In addition, although illustration is abbreviate | omitted, in order to wash | clean the grinding | polishing surface 11-1a of the grinding | polishing table 11-1, the cleaning mechanism same as the structure shown in FIG. 5 is provided.

  The abrasive grains used for the polishing slurry of the barrier layer 105 in the third step are preferably the same as the abrasive grains for polishing the Cu plating film layer 106, and the pH value of the chemical solution is also on the acidic side or alkaline side. The condition is that no mixture is formed on the polished surface. Here, the same silica particles were used in both cases, and as a case, both alkaline and acidic results were obtained.

The endpoint detection in the third step, using an optical film thickness measuring instrument 10-9 of FIG. 3, mainly detects the remaining of SiO ₂ oxide film thickness and the barrier layer 105 sends a signal. In addition, the oxide film is measured using a film thickness measuring instrument 10-4 or 11-4 with an image processing function provided in the vicinity of the polishing tables 10-1 and 11-1, using a film thickness measuring instrument with an image processing function. It is determined whether the semiconductor substrate W is left as a processing record or can be transferred to the next process. If the end point is not reached in the third step polishing, the semiconductor substrate is re-polished, or if it is polished beyond a specified value due to some abnormality, the next polishing is not performed so as not to increase defective products. Stop production equipment.

  After completion of the third step, the top ring 10-2 or 11-2 moves the semiconductor substrate W to the pusher 10-5 or 11-5 and places it thereon. The semiconductor substrate W on the pusher 10-5 or 11-5 is picked up by the second robot 8. At this time, the chemical solution may be ejected onto the front surface and the back surface of the semiconductor substrate W on the pusher 10-5 or 11-5 to remove particles or make it difficult.

  The second robot 8 puts the semiconductor substrate W into the second cleaning machine 7 or the first cleaning machine 9 and performs cleaning. The surface of the semiconductor substrate W is mainly scrubbed with a PVA sponge roll using pure water, a surfactant, a chelate material, or a pH adjusting material for particles. On the back surface of the semiconductor substrate W, a strong chemical solution such as DHF is ejected from the nozzle 3-5, and if there is no problem of diffusion of Cu or diffusion, a PVA sponge roll using the same chemical solution as the front surface is used. Use scrub scrubbing.

  After the completion of the cleaning, the semiconductor substrate W is picked up by the second robot 8, transferred to the reversing machine 6, and reversed. The inverted semiconductor substrate W is picked up by the first robot 3 and placed in the third cleaning machine 4. In the third cleaning machine 4, the surface of the semiconductor substrate W is cleaned by jetting megasonic water excited by ultrasonic vibration. At that time, pure water, a surfactant, a chelating material, or a pH adjusting material may be added to clean the surface with a known pencil type sponge. After cleaning, the semiconductor substrate W is dried by spin drying, and then the semiconductor substrate W is picked up by the first robot 3.

  When the film thickness is measured by the film thickness measuring device 10-4 or 11-4 provided in the vicinity of the polishing table 10-1 or 11-1, as described above, it is mounted on the unload port of the load / unload unit 1 as it is. It accommodates in cassette 1-1 to place.

  When performing multilayer film measurement, since it is necessary to perform measurement in a dry state, the film thickness is measured once by entering the film thickness measuring machine 13. Therefore, it is determined whether or not the processing record of the semiconductor substrate W is left or transferred to the next process. If the end point has not been reached, feedback is performed on the semiconductor substrate W to be processed later, or if polishing is performed beyond a specified value due to some abnormality, the next polishing is not performed so as not to increase defects. Stop the device.

  FIG. 6 is a diagram showing a configuration example of the first robot 3 and the dry state film thickness measuring machine 13 provided in the robot hand. FIG. 6A is a view showing the appearance of the first robot, and FIGS. 6B and 6C are views showing a plane and a cross section of the robot hand, respectively. As shown in the figure, the first robot 3 has two hands 3-1 and 3-1 on the upper and lower sides. The hands 3-1 and 3-1 are attached to the tips of the arms 3-2 and 3-2, respectively. , Turnable. The hands 3-1 and 3-1 can scoop up the semiconductor substrate W (drop the semiconductor substrate W) and transfer it to a predetermined place.

  A plurality of eddy current sensors 13a (four in the figure) constituting the dry state film thickness measuring device 13 are provided on the dropping surface of the semiconductor substrate W of the hand 3-1, and the film thickness of the semiconductor substrate W placed thereon is provided. Can be measured.

  7 to 9 are diagrams showing a configuration example of the Cu plating film forming unit 2. 7 is a diagram showing a plan configuration of a Cu plating film forming unit, FIG. 8 is a cross-sectional view taken along line AA of FIG. 7, and FIG. 9 is an enlarged cross-sectional view of a substrate holding portion and a cathode portion. As shown in FIG. 7, the Cu plating film forming unit 2 is provided with a substrate processing unit 2-1 that performs plating processing and ancillary processing, and accumulates a plating solution adjacent to the substrate processing unit 2-1. A plating solution tray 2-2 is disposed. Further, it has an electrode portion 2-5 that is held at the tip of an arm 2-4 that swings about a rotating shaft 2-3 and that swings between the substrate processing unit 2-1 and the plating solution tray 2-2. Electrode arm portions 2-6 are provided.

  Further, located on the side of the substrate processing section 2-1, a precoat / recovery arm 2-7, a fixed nozzle 2 for injecting a chemical solution such as pure water or ionic water, gas, or the like toward the semiconductor substrate. 8 is arranged. Here, three fixed nozzles 2-8 are arranged, and one of them is used for supplying pure water. As shown in FIGS. 8 and 9, the substrate processing unit 2-1 includes a substrate holding unit 2-9 that holds the semiconductor substrate W with the plating surface facing upward, and the substrate holding unit 2-9 above the substrate holding unit 2-9. A cathode portion 2-10 is provided so as to surround the periphery of the portion 2-9. Furthermore, a bottomed substantially cylindrical cup 2-11 that surrounds the periphery of the substrate holding part 2-9 and prevents the scattering of various chemicals used during processing is arranged to be movable up and down via the air cylinder 2-12. Yes.

  Here, the substrate holding portion 2-9 moves up and down between the lower substrate transfer position A, the upper plating position B, and the intermediate pretreatment / cleaning position C by the air cylinder 2-12, and rotates. It is configured to rotate integrally with the cathode portion 2-10 at an arbitrary acceleration and speed via a motor 2-14 and a belt 2-15. Opposite to the substrate delivery position A, a substrate carry-in / out port (not shown) is provided on the side of the first robot 3 on the side of the frame of the Cu plating film forming unit 2, and the substrate holder 2-9 is disposed at the plating position B. The sealing member 2-16 of the cathode part 2-10 and the cathode electrode 2-17 are brought into contact with the peripheral part of the semiconductor substrate W held by the substrate holding part 2-9. . On the other hand, the upper end of the cup 2-11 is located below the substrate carry-in / out opening, and reaches the upper portion of the cathode portion 2-10 when it is raised, as indicated by the phantom line in FIG.

  When the substrate holding portion 2-9 moves up to the plating position B, the cathode electrode 2-17 is pressed against the peripheral portion of the semiconductor substrate W held by the substrate holding portion 2-9 and energized, and at the same time, the sealing member 2-16 The inner peripheral edge is pressed against the upper surface of the peripheral edge of the semiconductor substrate W and is sealed in a watertight manner to prevent the plating solution supplied to the upper surface of the semiconductor substrate W from seeping out from the end of the semiconductor substrate W. This prevents the plating solution from contaminating the cathode electrode 2-17.

  As shown in FIG. 10, the electrode portion 2-5 of the electrode arm portion 2-6 includes a housing 2-18 at the free end of the swing arm 2-4 and a hollow support frame 2 surrounding the housing 2-18. -19, and an anode 2-20 sandwiched and fixed at the periphery by a housing 2-18 and a support frame 2-19. The anode 2-20 covers the opening of the housing 2-18, A suction chamber 2-21 is formed inside the housing 2-18. The suction chamber 2-21 is connected with a plating solution introduction tube for introducing and discharging a plating solution and a plating solution discharge tube (not shown).

  In this embodiment, a plating solution impregnated material 2-22 made of a water retention material covering the entire surface of the anode 2-20 is attached to the lower surface of the anode 2-20, and the plating solution impregnated material 2-22 is attached to the plating solution impregnated material 2-22. The surface of the anode 2-20 is moistened with a plating solution to prevent the black film from dropping onto the plating surface of the semiconductor substrate W, and at the same time, between the plating surface of the semiconductor substrate W and the anode 2-20. When the plating solution is injected into the air, the air is easily removed to the outside. The plating solution impregnated material 2-22 is, for example, a woven fabric, a non-woven fabric or a sponge-like material made of at least one material of polyethylene, polypropylene, polyester, polyvinyl chloride, Teflon (registered trademark), polyvinyl alcohol, polyurethane and derivatives thereof. Or a porous ceramic.

  The plating solution impregnated material 2-22 is attached to the anode 2-20 as follows. That is, a large number of fixing pins 2-25 having a head at the lower end are accommodated in the plating solution impregnated material 2-22 so as not to be able to escape upward, and the shaft is passed through the anode 2-20. The fixing pin 2-25 is urged upward via a U-shaped leaf spring 2-26, so that the plating solution impregnated material 2-22 is placed on the lower surface of the anode 2-20. It is attached in close contact via the elastic force of 26.

  With this configuration, the plating solution-impregnated material 2-22 can be surely brought into close contact with the lower surface of the anode 2-20 even when the thickness of the anode 2-20 gradually decreases with the progress of plating. it can. Therefore, air is prevented from being mixed between the lower surface of the anode 2-20 and the plating impregnated material 2-22 and causing a plating failure.

  For example, a cylindrical PVC (polyvinyl chloride) or PET (polyethylene terephthalate) pin anode having a diameter of about 2 mm is disposed from the upper surface side of the anode 2-20 so as to penetrate the lower surface of the anode 2-20. The plating solution impregnated material 2-22 may be bonded and fixed by attaching an adhesive to the tip surface of the pin that appears.

  The anode 2-20 and the plating solution impregnated material 2-22 can be used in contact with each other, but a gap is provided between the anode 2-22 and the plating solution impregnated material 2-22, and the plating solution is held in the gap. It is also possible to perform the plating process in the state of being allowed to occur. The gap is selected from the range of 20 mm or less, preferably 0.1 to 10 mm, more preferably 1 to 7 mm. In particular, when a soluble anode is used for the anode 2-20, the anode 2-20 dissolves from the bottom, so the gap between the anode 2-20 and the plating solution impregnated material 2-22 increases with time. A gap of about 0 to 20 mm is formed.

  The electrode unit 2-5 includes the semiconductor substrate W held by the substrate holding unit 2-9 and the plating solution impregnated material 2-22 when the substrate holding unit 2-9 is at the plating position B (see FIG. 9). Is lowered to about 0.1 to 10 mm, preferably 0.3 to 3 mm, more preferably about 0.5 to 1 mm, and in this state, the plating solution is supplied from the plating solution supply pipe, While the plating solution is impregnated in the plating solution impregnated material 2-22, the plating solution is filled between the upper surface (surface to be plated) of the semiconductor substrate W and the anode 2-20, whereby the surface to be plated of the semiconductor substrate W is filled. Is plated.

  The semiconductor substrate W before plating is carried into the substrate holding unit 2-9 at the substrate transfer position A by the hand 3-1 of the first robot 3, and placed on the substrate holding unit 2-9. Next, the cup 2-11 is raised, and at the same time, the substrate holder 2-9 is raised to the pretreatment / cleaning position C. In this state, the precoat / recovery arm 2-7 that has been in the retracted position is moved to the opposite position of the semiconductor substrate W, and a precoat liquid made of, for example, a surfactant is plated from the precoat nozzle provided at the tip of the semiconductor substrate W. Discharge intermittently on the surface. At this time, since the substrate holding portion 2-9 is rotating, the precoat liquid spreads over the entire surface of the semiconductor substrate W. Next, the precoat / recovery arm 2-7 is returned to the retracted position, the rotational speed of the substrate holding unit 2-9 is increased, and the precoat solution on the surface to be plated of the semiconductor substrate W is shaken off and dried by centrifugal force.

  Subsequently, the electrode arm portion 2-6 is swung in the horizontal direction so that the electrode portion 2-5 is positioned above the position where plating is performed from above the plating solution tray 2-2. Lower toward part 2-10. When the lowering of the electrode portion 2-5 is completed, a plating voltage is applied to the anode 2-20 and the cathode portion 2-10, and a plating solution is supplied to the inside of the electrode portion 2-5, so that the anode 2-20 is The plating solution is supplied to the plating solution impregnated material 2-22 from the penetrating plating solution supply port. At this time, the plating solution impregnated material 2-22 does not come into contact with the surface to be plated of the semiconductor substrate W and approaches 0.1 to 10 mm, preferably 0.3 to 3 mm, more preferably about 0.5 to 1 mm. It is in a state.

  When the plating solution continues to be supplied, the plating solution containing Cu ions leached from the plating solution impregnated material 2-22 fills the gap between the plating solution impregnated material 2-22 and the surface to be plated of the semiconductor substrate W. Then, Cu plating is applied to the surface to be plated of the semiconductor substrate W. At this time, the substrate holder 2-9 may be rotated at a low speed.

  When the plating process is completed, the electrode arm portion 2-6 is raised and swiveled to return to the upper side of the plating solution tray 2-2 and lowered to the normal position. Next, the precoat / recovery arm 2-7 is moved from the retracted position to a position facing the semiconductor substrate W and lowered to recover the remaining portion of the plating solution on the semiconductor substrate W from a plating solution recovery nozzle (not shown). . After the recovery of the remaining portion of the plating solution is completed, the precoat / recovery arm 2-7 is returned to the retracted position, pure water is discharged to the central portion of the semiconductor substrate W, and at the same time the substrate holding portion 2-9 is increased in speed. Rotate to replace the plating solution on the surface of the semiconductor substrate W with pure water.

  After the rinsing is completed, the substrate holding unit 2-9 is lowered from the plating position B to the processing / cleaning position C, and the substrate holding unit 2-9 and the cathode unit are supplied while supplying pure water from the fixed nozzle 2-8 for pure water. Rotate 2-10 to perform water washing. At this time, the sealing member 2-16 and the cathode electrode 2-17 can be cleaned simultaneously with the semiconductor substrate W by pure water directly supplied to the cathode portion 2-10 or pure water scattered from the surface of the semiconductor substrate W.

  After the water washing is completed, the supply of pure water from the fixed nozzle 2-8 is stopped, the rotation speed of the substrate holding unit 2-9 and the cathode unit 2-10 is increased, and the pure water on the surface of the semiconductor substrate W is subjected to centrifugal force. Shake off and dry. At the same time, the seal member 2-16 and the cathode electrode 2-17 are also dried. When the drying is completed, the rotation of the substrate holding unit 2-9 and the cathode unit 2-10 is stopped, and the substrate holding unit 2-9 is lowered to the substrate delivery position A.

  11 and 12 show an anode 2-20 and a plating solution impregnated material 2-22 according to another embodiment of the present invention. That is, in this example, the plating solution impregnated material 2-22 is made of porous ceramics such as alumina, SiC, mullite, zirconia, titania, cordierite, or a hard porous body such as a ligated body such as polypropylene or polyethylene, or These composite materials are used. For example, in the case of alumina-based ceramics, those having a pore diameter of 30 to 200 μm, a porosity of 20 to 95%, a thickness of 5 to 20 mm, preferably about 8 to 15 mm are used.

  The plating solution impregnated material 2-22 is provided with a flange portion 2-22a at an upper portion thereof, and the flange portion 2-22a is sandwiched between a housing 2-18 and a support frame 2-19 (see FIG. 10). The anode 2-20 is placed and held on the upper surface of the plating solution impregnated material 2-22. In the case of this embodiment, it is possible to place the anode 2-20 having various shapes such as a porous body or a mesh shape.

  Thus, by constituting the plating solution impregnated material 2-22 with a porous body, the electrical resistance inside the plating solution impregnated material 2-22 is increased through the plating solution that has entered the interior in a complicated manner, It is possible to make the plating film thickness uniform and prevent the generation of particles. That is, since the plating solution impregnated material 2-22 is a kind of high resistance body made of porous ceramics, it is preferable in terms of achieving uniform plating film thickness. In addition, by placing and holding the anode 2-20 on the plating solution impregnated material 2-22, the side in contact with the plating solution impregnated material 2-22 on the lower surface of the anode 2-20 as the plating progresses Even if it is melted, the distance between the lower surface of the anode 2-20 and the substrate W is kept constant by the weight of the anode 2-20 itself without using a jig for fixing the anode 2-20. It is possible to prevent air from being trapped due to air mixing.

  It is also possible to perform plating in a state where a gap is provided between the anode 2-20 and the plating solution impregnated material 2-22 and the plating solution is held in the gap, and this gap is 20 mm or less, preferably 0. It is selected in the range of 1 to 10 mm, more preferably 1 to 7 mm.

  For example, in the case of a 200 mm wafer, the resistance value of the high resistance structure which is the plating solution impregnated material 2-22 is 0.01Ω or more, preferably 0.01 to 2Ω, more preferably 0.03 to 1Ω. More preferably, it is in the range of 0.05 to 0.5Ω. The resistance value of this high resistance structure is measured by the following procedure. First, in the plating apparatus, a predetermined value of direct current (I) is passed between the two electrodes composed of the anode 2-20 and the semiconductor substrate W separated by a predetermined distance to perform plating, and the voltage (V1) of the DC power supply at this time Measure. Next, in the same plating apparatus, a high resistance structure having a predetermined thickness is disposed between both electrodes, and plating is performed by flowing the same value of direct current (I). At this time, the voltage of the direct current power supply (V2) Measure. Thereby, it can obtain | require from resistance value Rp = (V2-V1) / I of a high resistance structure.

  In this case, the purity of copper constituting the anode 2-20 is preferably 99.99% or more. Further, the distance between the bipolar plates composed of the anode 2-20 and the semiconductor substrate W is preferably 5 to 25 mm in the case of the substrate W having a diameter of 200 mm, and preferably 15 to 75 mm in the case of the semiconductor substrate W having a diameter of 300 mm. . The resistance value of the conductive layer on the semiconductor substrate W can be obtained by measuring the resistance value between the outer periphery and the center of the semiconductor substrate W with a tester or by calculating the value from the material, specific resistance, and thickness of the conductive layer. it can.

  In this example, on the upper surface of the anode 2-20, a plating solution introduction path 2-28a is provided inside, and a one-letter-shaped plating solution introduction pipe 2-28 extending in the diameter direction is installed. The anode 2-20 is provided with a plating solution injection hole 2-20a at a position facing the plating solution introduction hole 2-28b provided in the plating solution introduction pipe 2-28. The anode 2-20 is provided with a number of through holes 2-20b. Then, as shown in FIG. 13A, the flow of the plating solution Q spreads on both sides defined by the plating solution introduction pipe 2-28 after the plating solution column gradually grows with the continuation of the supply of the plating solution. Occurs, and the plating solution Q spreads over the plating surface of the semiconductor substrate W.

  Here, as shown in FIG. 13B, the plating solution introduction pipe 2-28 has wings extending in a cross shape in a direction perpendicular to each other, and a predetermined length along the length direction of each wing part. Even if the one having the plating solution introduction hole 2-28b at the position is used as an anode (not shown) and the one having the plating solution injection hole 2-20a at the position corresponding to the plating solution introduction hole 2-28b is used. Good. In this case, in the same manner as described above, a plating solution column that bridges the plating solution impregnated material 2-22 and the plating surface of the semiconductor substrate W is formed at a position approximately corresponding to the plating solution injection hole 2-20a of the anode 2-20. With the continuation of the supply of the plating solution, the plating solution column gradually grows, and then a flow of the plating solution Q that radially spreads in each quadrant defined by the plating solution introduction pipe 2-28 occurs. Q spreads over the plated surface of the semiconductor substrate W.

  Further, as shown in FIG. 13C, the same flow of the plating solution Q also occurs when the plating solution introduction pipe 2-28 is arranged circumferentially and the plating solution introduction hole 2-28b is provided at a predetermined position. Occurs. The plating solution introduction hole 2-28b of the plating solution introduction tube 2-28 is often provided with an equal pitch and an equal diameter hole, but the discharge of the solution is controlled by adjusting the pitch and the hole diameter. It is also possible to do.

  According to this embodiment, the plating solution flows from the lower surface of the plating solution impregnated material 2-22 to the upper surface (surface to be plated) of the anode 2-20 from the lower surface of the plating solution impregnated material 2-22. The plating solution impregnating material 2-22 and the plating solution column 2-30 for bridging the surface to be plated of the semiconductor substrate W are formed. At this time, when the plating solution flows inside the plating solution impregnated material 2-22, the plating solution is slightly diffused along the flow direction, whereby the seed layer 105 when the plating solution reaches the semiconductor substrate W (FIG. 1). Damage to the reference), i.e., reduction of the seed layer 105 due to local jetting, can be mitigated and contribute to film thickness uniformity in the subsequent plating step. Further, the distribution on the inner surface of the through hole 2-20b of the anode 2-20 has an effect of spreading the plating solution Q uniformly by providing a dense central portion and a rough peripheral portion.

  In addition, as shown with a virtual line in FIG. 12, after the plating solution column 2-30 in which the plating solution reaches the upper surface (surface to be plated) of the semiconductor substrate W from the lower surface of the plating solution impregnated material 2-22 is formed, for example, The substrate W may be raised instantaneously so that the plating solution impregnated material 2-22 and the semiconductor substrate W are brought close to each other instantaneously. Further, after the plating solution column 2-30 is formed in a state in which the edge of the semiconductor substrate W is slightly bent and curved in a concave shape, the pressure is released and the shape of the substrate W is restored. Thus, the plating solution impregnated material 2-22 and the substrate W can be brought close to each other instantaneously.

  For example, when the plating solution impregnated material 2-22 is thick or has a high density (low porosity), the resistance when the plating solution Q flows inside the plating solution impregnated material 2-22 increases. . As a result, the predetermined amount of plating solution Q does not come out and the bonding of the plating solution column 2-30 is disturbed. Even if air is entrained at this time, the plating solution impregnated material 2-22 and the semiconductor substrate W are brought close to each other instantly. As a result, a rapid outward flow is generated in the plating solution Q, and air bubbles are driven out together with the plating solution Q. At the same time, the plating solution between the plating solution impregnated material 2-22 and the substrate W is discharged. Q can be supplied in a short time.

  Note that the contact between the plating solution and the seed layer 107 in a non-energized state leads to a decrease in the seed layer 107. If the plating solution does not spread on the surface of the semiconductor substrate W in the energized state in a short time, the film thickness varies at the initial stage of plating. These cause deterioration of the uniformity of the subsequent plating film thickness. However, these problems can be prevented by supplying the plating solution between the plating solution impregnated material 2-22 and the semiconductor substrate W in a short time.

  FIG. 14 shows another embodiment. The plating solution introduction tube 41 itself is provided with a tube 45 communicating therewith, and this tube 45 is inserted into the plating solution conduction hole 39 of the anode 38 so that the tip thereof comes into contact with the surface of the porous body (plating solution impregnated material) 40. I have to. That is, in this embodiment, the plating solution Q can be supplied to the surface of the porous body 40 without touching the anode 38 at all. The plating solution introduction pipe 41 and the pipe 45 are integrally formed of a synthetic resin that is not affected by the plating solution Q. In FIG. 14, 32 is a holding member, 34 is a lip seal, and 36 is a contact (cathode).

  Then, the plating solution supplied directly from the plating solution introducing pipe 41 to the surface of the porous body 40 through the tube 45 reaches the surface of the semiconductor substrate W while slightly diffusing inside the porous body 40. A plurality of circular liquid columns R are formed between the surfaces, and the plurality of liquid columns R are coupled to each other on the substrate W to fill the substrate W with the plating solution.

  Even if this plating process is repeated, the inner diameter of the tip of the tube 45 does not spread over time, so that the ideal liquid column R does not collapse over time. Entrainment does not occur, bubbles do not accumulate between the porous body 40 and the semiconductor substrate W, and the plating film thickness does not become uneven.

  FIG. 15 shows another embodiment of the present invention. The electrolytic plating apparatus of the present embodiment differs from the embodiment shown in FIG. 14 in that the plating solution introduction tube 41 is formed in the plating solution conduction hole 39 of the anode 38 instead of forming the tube 45 integrally therewith. This is the point where a separately manufactured tube 47 is inserted. Also in this case, the tube 47 is made of a material that is not affected by the plating solution, and its tip (lower end) is brought into contact with the upper surface of the porous body 40.

  Even in this configuration, the plating solution does not directly touch the anode 38 as in the embodiment shown in FIG. 14, and the inner diameter of the tip of the tube 47 increases over time even if the plating process is repeated. There is nothing. Therefore, the liquid column R supplied from the porous body 40 does not collapse over time, and the liquid column R is always kept in an ideal state, and air is not involved.

  FIG. 16 shows another embodiment of the present invention. The electrolytic plating apparatus of this embodiment is different from the embodiment shown in FIG. 15 in that the plating solution introduction hole 41 and the porous body 40 of the anode 38 are provided instead of providing the plating solution introduction tube 41 with the tube 45 integrally therewith. This is the point that a separately manufactured tube 47 is inserted into the electrolyte passage portion 59 provided in FIG. In this case as well, the tube 47 is made of a material that is not affected by the plating solution.

  With the above configuration, even if the plating process is repeated, the inner diameter of the tip of the tube 47 does not spread over time, and the ideal liquid column R does not collapse over time. There is no air entrainment due to the disordered coupling of the columns R, and bubbles are not deposited between the porous body 40 and the substrate W and the plating film thickness is not uniform. At the same time, since the tube 47 enters the porous body 40, the resistance when the plating solution passes through the porous body 40 is reduced. For example, the porous body 40 is thick or has a high density (low porosity). Even in the case of using, an appropriate amount of plating solution is supplied from a predetermined position of the porous body 40, and air is not involved due to disorder of the coupling of the liquid column R, and bubbles are deposited between the porous body 40 and the semiconductor substrate W. Therefore, the plating film thickness does not become uneven.

  Also, as shown in FIG. 12, during the plating process, the plating solution Q is supplied from the plating solution injection hole 2-20a to the plating solution impregnated material 2-22, and the plating solution impregnated material 2-22 and the semiconductor substrate W are supplied. The plating solution Q is injected between the plating surface and a plating solution in the same amount as the injected plating solution from a plating solution discharge pipe (not shown) connected to the through hole 2-20b. Can be discharged.

  In this way, by agitating the plating solution during the plating process, it is possible to remove bubbles that could not be removed when performing the liquid filling and bubbles generated during the plating process after the liquid filling. Become.

  In the plating apparatus of the present invention, the electric field on the surface of the substrate to be processed can be adjusted by adjusting at least one of the outer shape, internal structure, and mounting of members having different electrical conductivities of the plating solution impregnated material 2-22. Can also be controlled. As described above, if the state of the electric field on the surface of the semiconductor substrate W is positively controlled so as to become a desired state, the processing state by the electrolytic treatment of the semiconductor substrate W can be set to the processing state of the intended in-plane distribution. it can. When the electrolytic treatment is a plating treatment, the plating film thickness formed on the substrate to be processed can be made uniform, or the plating film thickness on the substrate to be processed can be arbitrarily distributed.

  Here, the external shape is adjusted by adjusting the thickness of the plating solution impregnated material 2-22, adjusting the shape of the plating solution impregnated material 2-22 on the plane, or the like.

  The plating solution impregnated material 2-22 is composed of a porous material, and the internal structure of the porous material is adjusted by adjusting the pore size distribution, adjusting the porosity distribution, and bending rate distribution of the porous material. And adjustment of the combination of materials.

  The adjustment by mounting the members having different electric conductivities is performed by adjusting the blocking area of the plating solution impregnated member 2-22 with the members having different electric conductivities.

  Further, in an electrolytic processing apparatus for performing an electrolytic treatment of a semiconductor substrate W by filling an electrolytic solution between a semiconductor substrate W having a contact point between one electrode of an anode and a cathode and the other electrode opposed to the semiconductor substrate. A high-resistance structure having an electrical conductivity smaller than the electrical conductivity of the electrolytic solution is provided on at least a part of the electrolytic solution, the outer periphery of the high-resistance structure being held by a holding member, and a high resistance A sealing member is provided between the structure and the holding member to prevent the electrolyte from leaking from this portion and causing a current to flow.

  In the present embodiment, as shown in FIG. 17, a band-shaped insulating member 50 is wound around the outer peripheral side surface of a porous body 40 (a porous material such as porous ceramics) so as to surround it. As a material of the insulating member 50, for example, a stretchable material such as fluororubber is used.

  Then, the plating solution pressurized and supplied to the porous body 40 from the plating solution introduction pipe 41 through the plating solution introduction hole 39 of the anode 38 penetrates into the porous body 40 and fills the inside with the plating solution, and is discharged from the lower surface thereof. Then, it penetrates into the substrate W and the porous body 40 to fill the inside with the plating solution Q, and is discharged from the lower surface to fill the space between the semiconductor substrate W and the porous body 40 with the plating solution Q. The plating solution Q may be introduced from the gap between the lip seal 34 and the end face of the porous body 40. In this case, the plating solution introduction pipe 41 and the plating solution introduction hole 39 of the anode 38 are unnecessary.

  When a predetermined voltage is applied between the anode 38 and the semiconductor substrate W to cause a direct current to flow, the entire surface of the conductive layer of the semiconductor substrate W is plated (for example, copper plating). According to the present embodiment example, since the porous body 40 is interposed between the anode 38 and the semiconductor substrate W, the semiconductor substrate W is hardly affected by the difference in resistance value of each part due to the difference in the distance from the contact point of the semiconductor substrate W. Uniform plating (for example, copper plating) is performed on the entire surface of the conductive layer of the substrate W.

  However, the current density in the vicinity of the outer periphery near the contact 36 is still high, and the plating film thickness tends to be thicker than other parts.

  Therefore, in the present embodiment, by winding the insulating member 50 around the outer peripheral side surface of the porous body 40, the current concentrates in the vicinity of the outer periphery of the semiconductor substrate W as shown by the dotted line in FIG. The density is lowered so as to be substantially the same as the current density toward the other part of the semiconductor substrate W.

  FIG. 18 is a main part schematic diagram showing the outer peripheral portion of the porous body 40 of the electrolytic plating apparatus having the same structure shown in FIG. However, this electrolytic plating apparatus does not include the insulating member 50 shown in FIG. In this electrolytic plating apparatus, since the gap between the holding member 32 and the porous body 40 is not sealed, the plating solution Q flows out from the anode 38 through this gap portion as shown by an arrow, and a current path is generated. Since this current path does not pass through the inside of the porous body 40, the resistance value is low. Therefore, the current density becomes high, and there is a possibility that the control to reduce the plating film thickness in the vicinity of the outer periphery of the semiconductor substrate W may not be possible.

  Therefore, in this embodiment, as shown in FIG. 19, a sealing member 60 is provided between the porous body 40 and the holding member 32, thereby preventing leakage of the plating solution Q from this portion and the outer periphery of the semiconductor substrate W. The plating film thickness in the vicinity of the part can be controlled thinly.

  In addition, since the sealing member 60 in this embodiment has an inverted L-shaped cross section and is made of an insulator, it also has an action as an insulating member shown in FIG. Further, as shown in FIG. 19B, the seal member 60 includes a seal member portion 60-1 in an environment that seals a portion where the holding member 32 and the lower surface of the porous body 40 are in contact with each other, and a band-shaped insulating member shown in FIG. The insulating member 60-2 that exhibits the same function as 50 may be configured to be attached as separate parts.

  In addition, it cannot be overemphasized that the sealing member 60 in this example embodiment is applicable also to each embodiment other than FIG. That is, by using together with the electric field control means according to other various embodiments, the seal member 60 that prevents the leakage of the plating solution from between the outer peripheral surface of the porous body 40 that is a high resistance structure and the holding member 32, In addition, the electric field can be controlled effectively.

  Further, in this plating apparatus, the distance between the surface to be plated of the semiconductor substrate W and the anode 2-20 is narrow and only a small amount of plating solution is used, but the amount of additives and ions in the plating solution is limited. Therefore, in order to perform efficient plating in a short time, it is necessary to uniformly distribute these additives and the like in the plating solution. In this respect, according to this embodiment, the plating solution is agitated during the plating process, so that plating in a state where the additives and ions are uniformly distributed becomes possible.

  In the present plating apparatus, plating is performed on the semiconductor substrate W by connecting the semiconductor substrate W to the cathode and the anode to the anode, but the semiconductor substrate W is provided on the semiconductor substrate W by applying a reverse voltage. The plating film can also be etched. In a state where the plating film is almost completely embedded in the hole formed on the surface of the semiconductor substrate W (0.1 to 20 A plating current 40 to 400 seconds, for example, 70 seconds have elapsed), a short time (1 to 60 seconds) After applying a reverse voltage, for example, 3 seconds, a forward voltage is applied again (0.1-20 A plating current, 0.1-200 seconds, for example, 50 seconds). Suppresses the work and prevents the bulge only on the hole, making the plating film uniform.

  FIG. 20 is a diagram showing another example of a planar arrangement configuration of the semiconductor substrate manufacturing apparatus according to the present invention. 20, parts denoted by the same reference numerals as those in FIG. 2 indicate the same or corresponding parts. The same applies to FIGS. 21 and 22. In this substrate polishing apparatus, a pusher indexer 25 is disposed close to the first polishing apparatus 10 and the second polishing apparatus 11, and the substrate mounting table 21 is disposed in the vicinity of the third cleaning machine 4 and the Cu plating film forming unit 2, respectively. 22, a robot 23 (hereinafter referred to as “second robot 23”) is disposed in the vicinity of the first cleaning machine 9 and the third cleaning machine 4, and the second cleaning machine 7 and the Cu plating film forming unit 2 are arranged. A robot 24 (hereinafter referred to as “third robot 24”) is disposed in the vicinity of the robot, and a dry state film thickness measuring device 13 is disposed in the vicinity of the load / unload unit 1 and the first robot 2.

  In the semiconductor substrate manufacturing apparatus having the above-described configuration, the first robot 3 takes out the semiconductor substrate W from the cassette 1-1 placed on the load port of the load / unload unit 1, and uses the dry state film thickness measuring machine 13 to form the barrier layer. After measuring the film thickness of 105 and the seed layer 107, the semiconductor substrate W is mounted on the substrate mounting table 21. As shown in FIG. 6, when the dry state film thickness measuring device 13 is provided in the hand 3-1 of the first robot 3, the film thickness is measured and placed on the substrate platform 21. The semiconductor substrate W on the substrate mounting table 21 is transferred to the Cu plating film forming unit 2 by the second robot 23 to form the Cu plating film layer 106. After the formation of the Cu plating film layer 106, the film thickness of the Cu plating film layer 106 is measured by the film thickness measuring device 12 before and after plating. Thereafter, the second robot 23 transfers the semiconductor substrate W to the pusher indexer 25 and mounts it.

[Series mode]
In the series mode, the top ring head 10-2 adsorbs the semiconductor substrate W on the pusher indexer 25, transfers it to the polishing table 10-1, and performs polishing by pressing the semiconductor substrate W against the polishing surface. The polishing end point is detected by the same method as described above, and the semiconductor substrate W after polishing is transferred to the pusher indexer 25 by the top ring head 10-2 and mounted. The semiconductor substrate W is taken out by the second robot 23, loaded into the first cleaning machine 9, cleaned, and then transferred to the pusher indexer 25 for mounting.

  The top ring head 11-2 adsorbs the semiconductor substrate W on the pusher indexer 25, transfers it to the polishing table 11-1, and presses the semiconductor substrate W against the polishing surface for polishing. The polishing end point is detected by the same method as described above, and the semiconductor substrate W after polishing is transferred to the pusher indexer 25 by the top ring head 11-2 and mounted. The third robot 24 picks up the semiconductor substrate W, measures the film thickness with the film thickness measuring machine 26, and then carries it into the second cleaning machine 7 for cleaning. Subsequently, the wafer is carried into the third cleaning machine 4, where it is dried by cleaning and spin drying, and then the semiconductor substrate W is picked up by the third robot 24 and placed on the substrate mounting table 22.

[Parallel mode]
In the parallel mode, the top ring head 10-2 or 11-2 sucks the semiconductor substrate W on the pusher indexer 25, transfers it to the polishing table 10-1 or 11-1, and puts the semiconductor substrate W on the polishing surface. Press to polish each. After measuring the film thickness, the third robot 24 picks up the semiconductor substrate W and places it on the substrate mounting table 22.

  The first robot 3 transfers the semiconductor substrate W on the substrate mounting table 22 to the dry state film thickness measuring machine 13, measures the film thickness, and then returns it to the cassette 1-1 of the load / unload unit 1.

  FIG. 21 is a diagram showing another planar arrangement configuration of the semiconductor substrate manufacturing apparatus according to the present invention. This semiconductor substrate manufacturing apparatus is a semiconductor substrate manufacturing apparatus that forms a circuit wiring by forming a seed layer 107 and a Cu plating film layer 106 on a semiconductor substrate W on which a seed layer 107 is not formed, and polishing and removing it. The semiconductor substrate manufacturing apparatus is different from the semiconductor substrate manufacturing apparatus shown in FIG. 2 in that a seed layer deposition unit 27 is provided in place of the third cleaning machine 4 in FIG.

  The cassette 1-1 containing the semiconductor substrate W before the formation of the seed layer 107 is placed on the load port of the load / unload unit 1. The semiconductor substrate W before the formation of the seed layer 107 is taken out from the cassette 1-1 by the first robot 3, and the seed layer (Cu seed layer) 107 is formed by the seed layer forming unit 27. The seed layer 107 is formed by electroless plating, and heat is applied after film formation to improve the adhesion of the seed layer 107. The film thickness of the seed layer 107 is measured with a film thickness measuring machine 12 before and after plating.

  The semiconductor substrate is taken out by the first robot 3 and the Cu plating film layer 106 is formed by the Cu plating film forming unit 2. In forming the Cu plating film layer 106, first, hydrophilic treatment is performed on the surface of the semiconductor substrate W, and then Cu plating is performed. Then rinse or wash. If time allows, you may dry. When the semiconductor substrate W is taken out by the first robot 3, the film thickness of the Cu plating film layer 106 is measured by the film thickness measuring machine 12 before and after plating. The measurement method is the same as the measurement of the film thickness of the seed layer 107, and the measurement result is recorded as recording data of the semiconductor substrate W and is also used for abnormality determination of the Cu plating film forming unit 2. After the film thickness measurement, the first robot 3 passes the semiconductor substrate W to the reversing machine 5 and reverses the semiconductor substrate W.

  Next, the second robot 8 picks up the semiconductor substrate W from the reversing machine 5 and places it on the pusher 10-5 or 11-5. Subsequently, the semiconductor substrate W is adsorbed by the top ring 10-2 or 11-2, transferred onto the polishing table 10-1 or 11-1, and is polished against the polishing surface. The polishing here is substantially the same as the processing in steps 1 to 3 in the parallel mode polishing of the semiconductor substrate manufacturing apparatus shown in FIG.

  After the polishing, the top ring 10-2 or 11-2 returns the semiconductor substrate W to the pusher 10-5 or 11-5, picks up the semiconductor substrate W by the second robot 8, and carries it into the first cleaning machine 9. At this time, the chemical solution may be sprayed onto the front and back surfaces of the semiconductor substrate W on the pusher 10-5 or 11-5 to remove particles or make it difficult to attach.

  In the first cleaning machine 9, the front and back surfaces of the semiconductor substrate W are scrubbed. The surface of the semiconductor substrate W is scrubbed with a PVA roll sponge using pure water, a surfactant, a chelating material, or a pH adjusting material as cleaning water mainly for removing particles. On the back surface of the semiconductor substrate W, a strong chemical solution such as DHF is sprayed to etch the diffused Cu, or if there is no problem of Cu diffusion, scrub cleaning is performed with a PVA roll sponge using the same chemical solution as the front surface.

  After the cleaning, the semiconductor substrate W is picked up by the second robot 8 and transferred to the reversing machine 6, and the semiconductor substrate W is reversed by the reversing machine 6. The second robot 8 picks up the semiconductor substrate W again and carries it into the second cleaning machine 7. In the second cleaning machine 7, the surface of the semiconductor substrate W is cleaned by spraying megasonic water to which ultrasonic vibration is applied. At that time, pure water, a surface active material, a chelating material, or a pH adjusting material may be added to clean the surface with a pencil type sponge. Thereafter, the semiconductor substrate W is dried by spin drying.

  Thereafter, the semiconductor substrate W is picked up by the second robot 8 and transferred to the reversing machine 6 as it is. When the first robot 3 picks up the semiconductor substrate on the reversing machine 6 and measures the film thickness with the film thickness measuring machines 10-4 and 11-4 disposed in the vicinity of the polishing tables 10-1 and 11-1. Is stored in the cassette 1-1 placed on the unload port of the load / unload unit 1 as it is. When measuring the film thickness of the multilayer film, it is necessary to perform measurement in a dry state, so the film thickness is once measured by the dry state film thickness measuring machine 13. In this case, as shown in FIG. 6, when the dry film thickness measuring device 13 is attached to the hand 3-1 of the first robot 3, the film thickness can be measured on the robot hand. This film thickness measurement result is left as a processing record of the semiconductor substrate W, or it is determined whether it can be taken to the next process.

  FIG. 22 is a diagram showing another planar arrangement configuration of the semiconductor substrate manufacturing apparatus according to the present invention. In the semiconductor substrate manufacturing apparatus, as in the semiconductor substrate manufacturing apparatus shown in FIG. 12, the seed layer 107 and the Cu plating film layer 106 are formed on the semiconductor substrate W on which the seed layer 107 is not formed, and then removed by polishing to form a circuit wiring. This is a substrate manufacturing apparatus.

  In the present substrate polishing apparatus, a pusher indexer 25 is disposed close to the first polishing apparatus 10 and the second polishing apparatus 11, and the substrate mounting tables 21 and 22 are respectively provided in the vicinity of the second cleaning machine 7 and the seed layer deposition unit 27. And a robot 23 (hereinafter referred to as “second robot 23”) in close proximity to the seed layer deposition unit 27 and the Cu plating film deposition unit 2 to arrange the first cleaning machine 9 and the second cleaning machine. A robot 24 (hereinafter referred to as “third robot 24”) is disposed in the vicinity of 7, and a dry film thickness measuring device 13 is disposed in the vicinity of the load / unload unit 1 and the first robot 3.

  The semiconductor substrate W on which the barrier layer 105 is formed is taken out from the cassette 1-1 placed on the load port of the load / unload unit 1 by the first robot 3 and placed on the substrate platform 21. Next, the second robot 23 transports the semiconductor substrate W to the seed layer deposition unit 27 and deposits the seed layer 107. The seed layer 107 is formed by electroless plating. The second robot 23 measures the film thickness of the seed layer 107 with the film thickness measuring machine 12 before and after plating the semiconductor substrate on which the seed layer 107 is formed. After measuring the film thickness, the film is carried into the Cu plating film forming unit 2 to form the Cu plating film layer 106.

  After forming the Cu plating film layer 106, the film thickness is measured and transferred to the pusher indexer 25. The top ring 10-2 or 11-2 adsorbs the semiconductor substrate W on the pusher indexer 25, transfers it to the polishing table 10-1 or 11-1, and polishes it. After polishing, the top ring 10-2 or 11-2 transfers the semiconductor substrate W to the film thickness measuring device 10-4 or 11-4, measures the film thickness, and transfers the semiconductor substrate W to the pusher indexer 25.

  Next, the third robot 24 picks up the semiconductor substrate W from the pusher indexer 25 and carries it into the first cleaning machine 9. The third robot 24 picks up the cleaned semiconductor substrate W from the first cleaning machine 9, loads it into the second cleaning machine 7, and places the cleaned and dried semiconductor substrate on the substrate mounting table 22. Next, the first robot 3 picks up the semiconductor substrate W, measures the film thickness with the dry state film thickness measuring device 13, and stores it in the cassette 1-1 mounted on the unload port of the load / unload unit 1.

  In the above example, the seed layer 107 and the Cu plating film layer 106 are formed by the semiconductor substrate manufacturing apparatus having the configuration shown in FIG. 12, but in this semiconductor substrate manufacturing apparatus, the contact hole 103 or the groove 104 of the circuit pattern is formed. A circuit layer can be formed by forming a barrier layer 105, a seed layer 107, and a Cu plating film layer 106 on the formed semiconductor substrate W and polishing them.

  The cassette 1-1 containing the semiconductor substrate W before the formation of the barrier layer 105 is placed on the load port of the load / unload unit 1. The semiconductor substrate W is taken out from the cassette 1-1 by the first robot 3 and carried into the seed layer deposition unit 27, where the barrier layer 105 and the seed layer 107 are deposited. The barrier layer 105 and the seed layer 107 are formed by an electroless plating method and heated after plating to improve the adhesion between the barrier layer 105 and the seed layer 107. Thereafter, a Cu plating film layer 106 is formed by the Cu plating film forming unit 2. At that time, the film thicknesses of the barrier layer 105 and the seed layer 107 are measured by the film thickness measuring machine 12 before and after plating. Since the processing after the formation of the Cu plating film layer 106 is the same as that described in the processing of the semiconductor substrate manufacturing apparatus shown in FIG. 12, the description thereof is omitted.

  Also in the semiconductor substrate manufacturing apparatus shown in FIG. 22, the barrier layer 105, the seed layer 107, and the Cu plating film layer 106 are formed on the semiconductor substrate W on which the contact hole 103 or the groove 104 of the circuit pattern is formed as described above. The circuit wiring can be formed by polishing.

  The cassette 1-1 containing the semiconductor substrate W before the barrier layer 105 is formed is placed on the load port of the load / unload unit 1. The semiconductor substrate W is taken out from the cassette 1-1 placed on the load port of the load / unload unit 1 by the first robot 3 and placed on the substrate placing table 21. Next, the second robot 23 transports the semiconductor substrate W to the seed layer deposition unit 27 and deposits the barrier layer 105 and the seed layer 107. The barrier layer 105 and the seed layer 107 are formed by electroless plating. The second robot 23 measures the film thickness of the barrier layer 105 and the seed layer 107 with the film thickness measuring machine 12 before and after plating the semiconductor substrate W on which the barrier layer and the seed layer 107 are formed. After measuring the film thickness, the film is carried into the Cu plating film forming unit 2 to form the Cu plating film layer 106. Since the processing after the formation of the Cu plating film layer 106 is the same as that described in the processing of the semiconductor substrate manufacturing apparatus shown in FIG. 22, the description thereof is omitted.

  In the above embodiment, the Cu plating film layer 106 is formed to form the circuit wiring. However, the present invention is not limited to Cu plating, and may be a Cu alloy or other metal.

  FIG. 23 is a diagram showing a planar arrangement configuration of another embodiment of the semiconductor substrate manufacturing apparatus according to the present invention. The semiconductor substrate manufacturing apparatus includes a barrier layer deposition unit 111, a seed layer deposition unit 112, a plating film deposition unit 113, an annealing unit 114, a first cleaning unit 115, a bevel / back surface cleaning unit 116, a lid plating unit 117, Second cleaning unit 118, first aligner / film thickness measuring unit 141, second aligner / film thickness measuring unit 142, first substrate reversing machine 143, second substrate reversing machine 144, temporary substrate holder 145, third film thickness The measurement unit 146, the load / unload unit 120, the first polishing apparatus 121, the second polishing apparatus 122, the first robot 131, the second robot 132, the third robot 133, and the fourth robot 134 are arranged.

  In this embodiment, the barrier layer deposition unit 111 can be an electroless Ru plating apparatus, the seed layer deposition unit 112 can be an electroless Cu plating apparatus, and the plating film deposition unit 113 can be an electrolytic plating apparatus.

  FIG. 24 is a flowchart showing the flow of each process in the semiconductor substrate manufacturing apparatus. Each step in this apparatus will be described according to this flowchart. First, the semiconductor substrate taken out from the cassette 120a placed on the load / unload unit 120 by the first robot 131 is placed in the first aligner / film thickness measuring unit 141 with the surface to be plated up, In order to determine the reference point of the position for measuring the thickness, notch alignment for film thickness measurement is performed, and then the film thickness data of the semiconductor substrate before Cu film formation is obtained.

Next, the semiconductor substrate is transferred to the barrier layer deposition unit 111 by the first robot 131. This barrier layer forming unit 111 is an apparatus for forming a barrier layer on a semiconductor substrate by electroless Ru plating, and forms Ru as a Cu diffusion preventing film on an interlayer insulating film (for example, SiO ₂ ) of the semiconductor device. . The semiconductor substrate dispensed through the cleaning and drying processes is transported to the first aligner / film thickness measuring unit 141 by the first robot 131, and the film thickness of the semiconductor substrate, that is, the film thickness of the barrier layer is measured.

  The semiconductor substrate whose thickness has been measured is carried into the seed layer deposition unit 112 by the second robot 132, and a seed layer is deposited on the barrier layer by electroless Cu plating. The second aligner and film thickness measurement is performed to determine the position of the notch before the semiconductor substrate discharged through the cleaning and drying process is transferred by the second robot 132 to the plating film forming unit 113 which is an impregnation plating unit. It is conveyed to the unit 142 and aligns the notch for Cu plating. Here, if necessary, the film thickness of the semiconductor substrate before forming the Cu film may be measured again.

  The semiconductor substrate on which the notch alignment is completed is transferred to the plating film forming unit 113 by the third robot 133 and subjected to Cu plating. The semiconductor substrate dispensed through the cleaning and drying processes is transferred to the bevel / back surface cleaning unit 116 by the third robot 133 in order to remove an unnecessary Cu film (seed layer) at the end of the semiconductor substrate. The bevel / back surface cleaning unit 116 etches the bevel for a preset time and cleans the Cu adhering to the back surface of the semiconductor substrate with a chemical solution such as hydrofluoric acid. At this time, before transporting to the bevel / back surface cleaning unit 116, the thickness of the semiconductor substrate is measured by the second aligner and film thickness measuring unit 142 to obtain the value of the Cu film thickness formed by plating. Depending on the result, etching may be performed while arbitrarily changing the etching time of the bevel.

  The semiconductor substrate discharged through the cleaning and drying process by the bevel / back surface cleaning unit 116 is transported to the substrate reversing machine 143 by the third robot 133 and reversed by the substrate reversing machine 143 so that the surface to be plated is moved downward. After being directed, the fourth robot 134 is put into the annealing unit 114 to stabilize the wiring portion. Before the annealing treatment and / or after the treatment, it is carried into the second aligner / film thickness measuring unit 142 and the thickness of the copper film formed on the semiconductor substrate is measured. Thereafter, the semiconductor substrate is carried into the first polishing apparatus 121 by the fourth robot 134, and the Cu layer and seed layer of the semiconductor substrate are polished.

  At this time, desired abrasive grains and the like are used, but fixed abrasive grains can also be used in order to prevent dishing and to obtain surface flatness. After the first polishing is completed, the semiconductor substrate is transferred to the first cleaning unit 115 by the fourth robot 134 and cleaned. This cleaning is a scrub cleaning in which rolls having substantially the same length as the semiconductor substrate diameter are disposed on the front and back surfaces of the semiconductor substrate, and the semiconductor substrate and the roll are rotated while flowing pure water or deionized water. .

  After completion of the first cleaning, the semiconductor substrate is carried into the second polishing apparatus 122 by the fourth robot 134, and the barrier layer on the semiconductor substrate is polished. At this time, desired abrasive grains and the like are used, but fixed abrasive grains can also be used in order to prevent dishing and to obtain surface flatness. After completion of the second polishing, the semiconductor substrate is transferred again to the first cleaning unit 115 by the fourth robot 134 and scrubbed. After completion of the cleaning, the semiconductor substrate is transferred to the second substrate reversing machine 144 by the fourth robot 134 and reversed, and the surface to be plated is directed upward, and is further placed on the temporary substrate placement table 145 by the third robot.

  The semiconductor substrate is transferred from the temporary substrate stand 145 to the lid plating unit 117 by the second robot 132, and nickel / boron plating is performed on the Cu surface for the purpose of preventing oxidation of Cu by the atmosphere. The semiconductor substrate on which the lid plating is performed is carried from the lid plating unit 117 to the third film thickness measuring unit 146 by the second robot 132, and the copper film thickness is measured. Thereafter, the semiconductor substrate is carried into the second cleaning unit 118 by the first robot 131 and cleaned with pure water or deionized water. The semiconductor substrate that has been cleaned is returned to the cassette 120 a mounted on the load / unload unit 120.

  The aligner / film thickness measuring unit 141 and the aligner / film thickness measuring unit 142 position the substrate notch and measure the film thickness. Schematic diagrams of the aligner / film thickness measuring unit 142 are shown in FIGS. FIG. 27 is a flowchart showing the movement of the semiconductor substrate in the aligner / film thickness measuring unit 142.

  The aligner / film thickness measuring device 142 detects the notch Wa by the photomicrosensor 142-1 while rotating the semiconductor substrate W, and positions the notch Wa to an arbitrary position. For example, the reference position of the film thickness measurement point is determined by detecting the position of the notch Wa so that the measurement point before and after the processing does not deviate, or the mounting direction of the semiconductor substrate when the plating apparatus is loaded is aligned. be able to.

  The apparatus configuration includes a rotatable vacuum chuck 142-4, a lift 142-2, a notch detection photomicrosensor 142-1, an eddy current sensor 142-3 for film thickness measurement, and the like. The semiconductor substrate W is carried in by the hand 132-1 of the second robot hand 132. The aligner / film thickness measuring unit 142 raises the lift 142-2 and transfers the semiconductor substrate onto the lift 142-2. The hand 132-1 of the second robot 132 is retracted and the lift is lowered. Thus, the semiconductor substrate W is mounted on the vacuum chuck 142-4.

  Thereafter, while rotating, the vacuum chuck 142-4 detects the notch Wa by the photomicrosensor 142-1, and positions the notch Wa at an arbitrary position according to the subsequent processing. Further, the film thickness at an arbitrary point of the semiconductor substrate W is measured by the eddy current sensor 142-3 as necessary. Thereafter, when the plating apparatus is turned on, the position of the notch Wa of the semiconductor substrate W in the plating unit 113 is set to a fixed position. Thereafter, the vacuum chuck is turned off, the semiconductor substrate W is transferred by raising the lift 142-2, the hand 133-1 of the third robot 133 is inserted, the lift 142-2 is lowered, and the semiconductor substrate W is lowered. Is transferred to the hand 133-1 and the semiconductor substrate W is taken out.

  In FIGS. 25 and 26, reference numeral 142-6 denotes a vacuum pump, which is connected to the suction hole of the vacuum chuck 142-4 via a rotary joint 142-5. 142-7 is a motor that rotates the vacuum chuck 142-4, 142-9 is a motor that rotates the arm 142-8 to which the eddy current sensor 142-3 is attached, and 142-10 is a lifter 142-2 that moves up and down. Actuator. Reference numeral 142-11 denotes a temporary placement table for the semiconductor substrate W. Further, the configuration and operation of the aligner / film thickness measuring unit 141 are the same as those of the aligner / film thickness measuring unit 142, and therefore, the description thereof is omitted.

The semiconductor substrate W delivered to the barrier layer film forming unit 111 which is an electroless Ru plating apparatus is first given Pd as a catalyst. About 30 ml of Pd is applied to the semiconductor substrate W, and the processing time is about 1 minute. After washing the semiconductor substrate W with water, the semiconductor substrate W is treated with hydrochloric acid for activation treatment. At this time, hydrochloric acid has a concentration of about 100 ml / L, a liquid volume of about 30 ml, and a treatment time of about 1 minute. After washing the semiconductor substrate W again, electroless Ru plating is performed. As the ruthenium plating solution, RuCl ₃ · xH ₂ O is used. The substrate is processed at a substrate surface temperature of about 85 ° C. for about 10 minutes. The film formation rate at that time is about 2 nm / min. Thus, a barrier layer is formed, which is completed through a water washing process and a spin drying process. In the above process, about 20 nm of Ru can be obtained by electroless plating on SiO ₂ .

  The barrier layer 105 can be formed not only by electroless plating but also by CVD, sputtering, or electrolytic plating. The barrier layer is not limited to Ru, and any material may be used as long as it can achieve prevention of Cu diffusion to the interlayer insulating film such as TiN.

  The electroless Cu plating that is the seed layer deposition unit 112 can use the same apparatus as the electroless Ru plating unit. FIG. 28 is a diagram showing a configuration example of an electroless Cu plating unit. As shown in the figure, the seed layer deposition unit 112, which is an electroless Cu plating unit, includes a rotatable substrate holding means 112-1, and a semiconductor substrate W is a surface to be plated on the upper surface of the substrate holding means 112-1. The outer peripheral portion is sealed and held by the plating solution holding member 112-2. Further, a shower head 112-3 for supplying an electroless plating solution to the semiconductor substrate W facing the surface to be plated is disposed. Further, a cleaning liquid supply nozzle 112-4 and a plating liquid recovery nozzle 112-5 are arranged. Reference numeral 112-6 denotes a collection container, and 112-7 denotes a motor for rotating the substrate holding means 112-1.

  In the seed layer deposition unit 112 having the above-described configuration, the semiconductor substrate W itself is directly heated by the back surface heater 112-8 and maintained at, for example, 70 ° C. A plating solution heated to, for example, 50 ° C. is ejected from the shower head 112-3, and the plating solution is poured over substantially the entire surface of the semiconductor substrate W. The amount of the plating solution to be supplied is about 1 mm on the surface of the semiconductor substrate W. Then, the semiconductor substrate W is instantaneously rotated by the motor 112-7 to uniformly wet the surface to be plated, and then the plating film is formed on the surface to be plated while the semiconductor substrate W is stationary.

  After the seed layer deposition process is completed, the tip of the plating recovery nozzle 112-5 is lowered to the vicinity of the inside of the plating solution holding member 112-2 at the periphery of the surface of the semiconductor substrate W, and the plating solution is sucked. At this time, if the semiconductor substrate W is rotated at a rotation speed of, for example, 100 rpm or less, the liquid remaining on the upper surface of the semiconductor substrate W can be collected on the plating solution holding member 112-2 by centrifugal force, and efficiently and at a high recovery rate. The plating solution can be collected.

  Then, the substrate holding means 112-1 is lowered to separate the semiconductor substrate W from the plating solution holding member 112-2, the rotation of the semiconductor substrate W is started, and the cleaning solution (ultra pure water) is supplied from the cleaning solution supply nozzle 112-4 to the semiconductor substrate. The electroless plating reaction is stopped by spraying onto the plated surface of W to cool the plated surface and at the same time diluting and washing. Next, after the semiconductor substrate W is rotated at high speed by the motor 112-7 and spin-dried, the semiconductor substrate W is taken out from the substrate holding means 112-1.

As the electroless plating solution, CuSO ₄ .5H ₂ O contains EDTA · 4Na as a complexing agent, HCHO as a reducing agent, NaOH as an alkali for pH adjustment so that the pH becomes 12.5, Contains α, α'-dipyridyl. The plating temperature is about 40 to 80 ° C. The seed layer can be formed not only by electroless plating but also by CVD, sputtering, or electrolytic plating.

  The bevel / back surface cleaning unit 116 can perform edge (bevel) Cu etching and back surface cleaning at the same time, and can suppress the growth of a copper natural oxide film in a circuit forming portion on the substrate surface. FIG. 29 shows a schematic diagram of the bevel / back surface cleaning unit 116. As shown in FIG. 29, the substrate W is positioned inside the bottomed cylindrical waterproof cover 220 and is held up horizontally by the spin chuck 221 at a plurality of locations along the circumferential direction of the peripheral portion thereof at high speed. The substrate holding part 222 to be rotated, the center nozzle 224 is positioned above the central part on the surface side of the substrate W held by the substrate holding part 222, and the edge nozzle 226 is downwardly positioned above the peripheral edge. Further, the back nozzles 228 are respectively arranged upwardly so as to be positioned substantially below the center portion on the back surface side of the substrate W. The edge nozzle 226 is configured to be movable in the diameter direction and the height direction of the substrate W.

  The moving width L of the edge nozzle 226 can be arbitrarily positioned from the outer peripheral end surface of the substrate toward the center, and a set value is input in accordance with the size of the substrate w, the purpose of use, and the like. Usually, the edge cut width C is set in the range of 2 mm to 5 mm, and the copper film within the set cut width C is removed if the amount of liquid flowing from the back surface to the front surface is not a problem. be able to.

  Next, a cleaning method using this cleaning apparatus will be described. First, the semiconductor substrate W is horizontally rotated integrally with the substrate holding unit 222 in a state where the substrate is held horizontally by the substrate holding unit 222 via the spin chuck 221. In this state, an acid solution is supplied from the center nozzle 224 to the central portion on the surface side of the substrate W. The acid solution may be any non-oxidizing acid such as hydrofluoric acid, hydrochloric acid, sulfuric acid, citric acid, or succinic acid. On the other hand, the oxidant solution is continuously or intermittently supplied from the edge nozzle 226 to the peripheral edge of the substrate W. As this oxidizing agent solution, any one of ozone water, hydrogen peroxide water, nitric acid water, sodium hypochlorite water, or the like, or a combination thereof is used.

  As a result, in the region of the peripheral portion C of the semiconductor substrate W, the copper film or the like formed on the upper surface and the end surface is rapidly oxidized with the oxidant solution and simultaneously supplied from the center nozzle 224 and spreads over the entire surface of the substrate. Is removed by etching. In this way, by mixing the acid solution and the oxidant solution at the peripheral edge of the substrate, a steeper etching profile can be obtained as compared to supplying the mixed water from the nozzle in advance. At this time, the etching rate of copper is determined by their concentration. Further, when a copper natural oxide film is formed on the circuit forming portion on the surface of the substrate, the natural oxide is immediately removed by an acid solution that spreads over the entire surface of the substrate as the substrate rotates, and grows. There is nothing. Note that after the supply of the acid solution from the center nozzle 224 is stopped, the supply of the oxidant solution from the edge nozzle 226 is stopped to oxidize silicon exposed on the surface and suppress the adhesion of copper. be able to.

  On the other hand, an oxidizing agent solution and a silicon oxide film etching agent are supplied simultaneously or alternately from the back nozzle 228 to the center of the back surface of the substrate. As a result, copper or the like adhering to the back surface side of the semiconductor substrate W can be removed by oxidizing the silicon on the substrate together with the oxidant solution and etching with the silicon oxide etchant. It is preferable to use the same oxidant solution as the oxidant solution supplied to the surface in order to reduce the types of chemicals. Also, hydrofluoric acid can be used as the silicon oxide film etchant, and the number of chemicals can be reduced if hydrofluoric acid is used for the acid solution on the surface side of the substrate. As a result, a hydrophobic surface is obtained if the oxidant supply is stopped first, and a saturated surface (hydrophilic surface) is obtained if the etchant solution is stopped first, and the back surface is adjusted according to the requirements of the subsequent process. You can also

  In this way, after supplying the acid solution, that is, the etching solution to the substrate and removing the metal ions remaining on the surface of the substrate W, the pure water is further supplied to perform the pure water replacement to remove the etching solution. Perform spin drying. In this way, the removal of the copper film within the edge cut width C at the peripheral edge portion of the semiconductor substrate surface and the removal of copper contamination on the back surface can be simultaneously performed, and this process can be completed within 80 seconds, for example. Note that the etching cut width of the edge can be arbitrarily set (2 mm to 5 mm), but the time required for etching does not depend on the cut width.

  Performing the annealing process before the CMP process after plating has a good effect on the subsequent CMP process and the electrical characteristics of the wiring. When the surface of a wide wiring (unit: several μm) was observed after CMP treatment without annealing, many defects such as microvoids were observed and the electrical resistance of the entire wiring was increased. Decrease and increase electrical resistance improved. In the case of no annealing, voids were not observed in the fine wiring, which may be related to the degree of grain growth. In other words, grain growth is unlikely to occur with thin wiring, but with the growth of grains with wide wiring, ultrafine pores that cannot be seen by SEM in the plating film are gathered in the course of grain growth accompanying annealing. It can be inferred that a microvoid-like dent has formed in the upper part of the wiring. As annealing conditions of the annealing unit 114, hydrogen was added (2% or less) in the gas atmosphere, and the temperature was about 300 to 400 ° C., and the above effect was obtained in 1 to 5 minutes.

The characteristics of the semiconductor substrate manufacturing apparatus having the above configuration are listed as follows.
Within each film forming unit, pre-treatment, cleaning and drying can be performed, and contaminants are not brought into the next process.

  Each unit installed in this device uses various chemicals. Even in the same unit, different chemical solutions may be selected depending on the process. When different chemical solutions are mixed, the treatment effect of the chemical solution changes and the crystal of the compound precipitates, affecting not only the substrate being processed, but also affecting the processing of the next incoming semiconductor substrate. It is also possible. Further, when the transport means is a robot hand, since the hand is contaminated, various chemicals adhere to the substrate every time the transport is performed.

  Therefore, in this apparatus, before moving to the next unit, that is, the next process of the semiconductor substrate manufacturing apparatus, the chemical solution is separated by carrying out the processing without leaving the processing chemical solution on the semiconductor substrate in the unit and then carrying it out. It is characterized by not being brought into the unit. For example, when transferring a substrate from an electroless plating unit, which is a film forming process of a barrier layer, to an electrolytic plating unit that performs a plating process for embedding wiring, a cleaning process and a drying process are performed in the electroless plating unit. Thus, an alkaline electroless plating solution is not brought into an electrolytic plating unit that handles an acidic plating solution.

  In addition, when moving from the plating process to the CMP process, in the plating unit, in order to avoid bringing acidic plating solution into the CMP, in addition to plating, cleaning and drying are performed in the electrolytic plating unit. .

  In addition, the plating film deposition unit 113 that performs the plating process for embedding the wiring is characterized in that it can process a surface active material, a precoat, and the like. As a result, pretreatment can be performed immediately before electrolytic plating in the plating film forming unit 113 (in a single unit), so that liquid filling into the fine holes is improved. In addition, since the plating film deposition unit 113 (in a single unit) has a cleaning mechanism and a spin dry mechanism, the semiconductor substrate W is moved to a desired wet state such as liquid removal or drying during cell-to-cell movement. it can. In particular, this cleaning mechanism and spin dry mechanism not only clean and dry the semiconductor substrate, but can also clean and dry the sealing material and cathode contacts in the same way. This has the effect of increasing the continuous operation time.

  Flexible unit mounting and process construction are possible in a short period of time. 30, FIG. 31, and FIG. 32 are diagrams showing configuration examples in which the respective mounting units of the semiconductor substrate manufacturing apparatus can be interchanged with each other. 30 (a) and 30 (b) are plan views of the base plate on which the units constituting the semiconductor substrate manufacturing apparatus are mounted, FIG. 30 (c) is a front view, and FIG. FIG. 31 (a) is a front view of each unit of the semiconductor substrate manufacturing apparatus, FIG. 31 (b) is a front view taken along the line BB of FIG. 32 (a), and FIG. The front view which shows the state which mounted each unit of the semiconductor substrate manufacturing apparatus on the baseplate, The same figure (b) is CC sectional front view of (a).

  As shown in the figure, two rails (for example, made of SUS material) 302 are formed on the upper surface of the base plate 300 on which each unit 301 of the semiconductor substrate manufacturing apparatus is mounted at an interval narrower than the front dimension D of each unit 301. 302 is embedded in the base plate 300 in parallel (the upper surface of the base plate 300 and the upper surfaces of the rails 302 and 302 are substantially at the same height), and a single guide rod (for example, made of nylon resin material) 303 is placed between them. Is arranged so as to protrude from the upper surface of the base plate 300. The bottom of each unit 301 has a double bottom. Four rollers 304 are attached to the upper base 305 with screws 308, and the lower base 306 engages with a guide bar 303. A groove 307 is provided. The height of each roller 304 can be adjusted with a screw 308.

  The screw 308 is adjusted so that the bottom of each roller 304 protrudes slightly (for example, about 1 mm) from the lower bottom 306. In this state, when the unit 301 is inserted so that the guide bar 303 engages with the groove 307 of the lower bottom portion 306 of the unit 301, the unit 301 is guided by the guide bar and is placed in a predetermined position. In this state, as shown in FIG. 32A, there is a gap d corresponding to the protrusion of the roller 304 between the lower bottom 306 and the upper surface of the base plate 300. When each unit 301 is in a predetermined position, each screw 308 is loosened and each roller 304 is retracted, so that the lower bottom portion 306 of the unit 301 contacts the upper surface of the base plate 300 (not shown). In this state, each unit 301 is fixed to the base plate 300 with a fixing screw (not shown).

  Each unit is mounted so that each loading / unloading port faces in the direction of the transfer robots 131 to 134 (see FIG. 23). At this time, the width of the unit 300 on the robot surface side, that is, the frontage dimension D is the same size. At the time of mounting, it can be easily mounted by inserting it along the rails 302 and 302 into the unit mounting surface of the base plate 300 of the apparatus as described above. Moreover, what is necessary is just to make it pull in the reverse direction, when removing the mounted unit 301 from an apparatus main body.

  In the field of semiconductor manufacturing, technological innovation is steadily progressing. However, by making each unit 301 constituting the apparatus easily replaceable as described above, some units 301 can be replaced without replacing the entire apparatus. By replacing the unit with a new unit, it is possible to update the functions of the entire apparatus in a short period of time and at a low cost. Also, on the premise of such unit 301 replacement, the control system is designed to be easily compatible. In this apparatus, it is possible to freely set the execution / non-execution of the process processing (unit skip function) and the processing path (unit use order) of the semiconductor substrate W for the mounted unit 301. . Therefore, it is possible to flexibly cope with the apparatus function not only when the unit is replaced but also when processing is performed in a different process. In particular, since it has become important to have many types of small-scale lines in response to recent multi-variety and small-volume production, the above-described structure in which necessary units can be easily and freely combined is particularly useful. .

  FIG. 33 is a diagram showing a planar arrangement configuration of another embodiment of the semiconductor substrate manufacturing apparatus according to the present invention. This semiconductor substrate manufacturing apparatus is a semiconductor substrate manufacturing apparatus that can be applied to small-scale, high-mix, low-volume production, such as system LSI manufacturing required for digital information home appliances. The semiconductor substrate manufacturing apparatus includes a first plating film deposition unit 401, a second plating film deposition unit 402, a bevel / back surface cleaning unit 403, an annealing unit 404, so as to surround the first robot 406 and the second robot 407. The aligner / film thickness measurement unit 405 and the load / unload unit 408 are arranged. Two indexers 409 and 409 are arranged in the load / unload unit 408, and a cassette 410 is placed on each of them. In FIG. 34, reference numeral 411 denotes a chemical solution supply unit, 412 denotes an electrical control panel, 413 denotes a touch panel, and 414 denotes an air supply or exhaust duct.

  The indexer 409 can raise and lower the cassette 410 placed thereon, and is a mechanism for positioning in the height direction according to the substrate taken out by the first robot 406. The first robot 406 has the same height. Access location. In this semiconductor substrate manufacturing apparatus, the first robot 406 takes out the substrate on which the barrier layer and the seed layer are formed by another apparatus from the cassette 410 on the indexer 409 and conveys it to the aligner / film thickness measuring unit 405. After the alignment / film thickness measurement unit 405 performs notch alignment and film thickness measurement before film formation, the second robot 407 takes out the substrate from the aligner / film thickness measurement unit 405, and the first plating film formation unit 401. Or it conveys to the 2nd plating film forming unit 402, and copper plating is given here.

  The substrate on which the copper plating has been completed is transferred to the aligner / film thickness measurement unit 405 by the second robot 407, and the film thickness of the substrate after plating is measured by the aligner / film thickness measurement unit 405. The first robot 406 takes out the substrate of the aligner / film thickness measuring unit 405, transports it to the bevel / back surface cleaning unit 403, cleans the bevel / back surface cleaning unit 403, and then transports it to the annealing unit 404. After the substrate is annealed by the annealing unit 404, it is returned to the cassette 410 on the indexer 409.

  The first plating film deposition unit 401 and the second plating film deposition unit 402 may be set in the same process, and the plating process for a plurality of substrates may be performed in parallel. Also, different processes may be used for the first plating film deposition unit 401 and the second plating film deposition unit 402, and one process may be suspended and only the other process may be used. . Further, for example, one of them may be a reinforcing seed layer film forming unit for reinforcing the seed layer. The reinforcing seed layer film forming unit has, for example, a structure substantially similar to the plating film forming units 401 and 402. As a plating solution, copper sulfate is usually used for copper plating, whereas a high alkali copper pierate is used. Polarizing liquid is used. Further, as the reinforcing seed layer film forming unit, a so-called face-down type plating unit that performs plating by bringing the surface to be plated of the semiconductor substrate downward and in contact with a plating solution accommodated in a plating tank may be used. In addition, other units such as the annealing unit 404 and the bevel / back surface cleaning unit 403 can be changed to plating film forming units for performing different processes of the reinforcing seed layer forming unit system.

  In this substrate manufacturing apparatus, the width of the side 401a, 402a facing the second robot 407 of the first plating film deposition unit 401 and the second plating film deposition unit 402, that is, the frontage dimension D, is determined by the annealing unit 404 or The bevel / back surface cleaning unit 403, the aligner / film thickness measuring unit 405, the cleaning units 115 and 118 in FIG. 23, the seed layer film forming unit 112, the barrier layer film forming unit 111, the lid plating unit 117, and the aligner / film thickness measuring unit 141. 142, film thickness measurement unit 146, substrate reversing machines 143, 144, temporary table 145, etc., so that the same size as the frontage dimensions, these units can be easily replaced with other units even when a new process is introduced. Since it can be exchanged, the apparatus can be updated in a short time and at a low cost.

  FIG. 34 is a diagram showing a planar arrangement configuration of another embodiment of the semiconductor substrate manufacturing apparatus according to the present invention. This semiconductor substrate manufacturing apparatus is different from the semiconductor substrate manufacturing apparatus shown in FIG. 33 only in that there is no annealing unit 404 in FIG. 33, and the other components are the same in configuration as the semiconductor substrate manufacturing apparatus in FIG. .

  It is also possible to use a plurality of semiconductor substrate manufacturing apparatuses in a factory mainly in the layout of the semiconductor substrate manufacturing apparatus, and to change the configuration of the units mounted on each of them in different wiring processes. If a large amount of production is required temporarily, it is possible to change the semiconductor substrate manufacturing apparatus composed of the same unit immediately.

  By configuring the semiconductor substrate manufacturing apparatus as described above, various processes such as the formation of a metal plating film can be continuously performed on a semiconductor substrate having a circuit formed on the surface. Compared with the case of using separate apparatuses, the whole is compact, does not require a large installation space, the initial cost and running cost of the apparatus can be reduced, and a semiconductor substrate can be manufactured in a short processing time.

  In addition, by providing the annealing unit, the adhesive strength of the metal plating film is stable, and there is no worry of peeling during polishing, and the electrical characteristics are improved.

  Further, by providing the lid plating unit, lid plating for preventing oxidation and alteration can be further applied to the upper surface of the wiring portion formed by CMP, and oxidation and alteration of the wiring portion can be prevented.

  In addition, by providing a film thickness measuring unit having either one or both of a film thickness measuring device and a detection sensor, either or both of the film thickness and the film surface state are measured and detected, and desired plating is performed. The plating time, polishing time and annealing time for obtaining the film thickness can be adjusted.

  In addition, since the units can be interchanged, the function update of the entire semiconductor substrate manufacturing apparatus can be realized in a short time and at a low cost.

  In addition, since the plating process and the cleaning process are performed while the semiconductor substrate is held by the substrate holder, in addition to the above effects, the plating process and the cleaning process can be performed without moving the semiconductor substrate. Does not carry any contaminants.

FIGS. 1A to 1C are explanatory views for forming circuit wirings on a semiconductor substrate. It is a figure which shows the plane structural example of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the schematic structural example of the grinding | polishing table and top ring part of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the schematic structural example of the washing machine of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the schematic structural example of the polishing table washing machine of the semiconductor substrate manufacturing apparatus which concerns on this invention. 6A and 6B are diagrams showing a robot of a semiconductor substrate manufacturing apparatus according to the present invention, in which FIG. 6A is an external view, and FIGS. 6B and 6C are plan and cross-sectional views of a robot hand. It is a figure which shows the plane structure of the Cu plating film film-forming unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is AA sectional drawing of FIG. It is a figure which shows the cross-sectional structure of the board | substrate holding | maintenance part and cathode part of Cu plating film film-forming unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the cross-sectional structure of the electrode arm part of Cu plating film film-forming unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is an external view which shows the example of schematic structure of the anode and plating solution impregnation member part of the electrolytic plating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the example of schematic structure of the anode and plating solution impregnation member part of the electroplating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure for demonstrating the flow of the plating solution on the semiconductor substrate surface of the electrolytic plating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the example of schematic structure of the anode and plating solution impregnation member part of the electroplating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the example of schematic structure of the anode and plating solution impregnation member part of the electroplating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the example of schematic structure of the anode and plating solution impregnation member part of the electroplating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the example of schematic structure of the anode and plating solution impregnation member part of the electroplating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the schematic structural example of the outer peripheral part of the plating solution impregnation member of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is sectional drawing which shows the example of schematic structure of the anode and plating solution impregnation member part of the electroplating apparatus of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the plane structural example of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the plane structural example of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the plane structural example of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the plane structural example of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the flow of each process in the semiconductor substrate manufacturing apparatus shown in FIG. It is a figure which shows the example of a schematic plane structure of the aligner and film thickness measuring unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the example of a side surface structure of the aligner and film thickness measuring unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the motion of the semiconductor substrate in the aligner and film thickness measurement unit shown in FIG. It is a figure which shows the structural example of the seed layer film-forming unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the schematic structural example of the bevel and back surface cleaning unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the baseplate structural example which mounts each mounting unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the example of a schematic front structure of each mounting unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the mounting schematic front surface structural example of each mounting unit of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the plane structural example of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the plane structural example of the semiconductor substrate manufacturing apparatus which concerns on this invention. It is a figure which shows the state which performed CMP, without carrying out the bevel etching process of a semiconductor substrate, and the seed layer and the barrier layer remained in the bevel part.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Load unload part 2 Cu plating film film-forming unit 2-1 Substrate processing part 2-2 Plating solution tray 2-3 Rotating shaft 2-4 Arm 2-6 Electrode arm 2-7 Precoat / recovery arm 2-8 Fixed nozzle 2-9 Substrate holder 2-10 Cathode 2-20 Anode 2-22 Plating solution impregnated material 2-28 Plating solution introduction pipe 3 First robot 4 Third cleaning machine 5 Inverting machine 6 Inverting machine 7 Second cleaning machine 8 Second 2 robot 9 first cleaning machine 10 first polishing apparatus 11 second polishing apparatus 12 film thickness measuring machine before and after plating 13 dry state film thickness measuring machine 14 nitrogen gas supply source 15 pure water supply source 16 regulator 17 regulator 18 air operator valve 19 Air operator valve 21 Substrate mounting table 22 Substrate mounting table 23 Second robot 24 Third robot 25 Pusher Indexer 26 Film thickness measuring device 27 Seed layer film forming unit 28 Temperature control fluid piping 32 Holding member 34 Lip seal 36 Contact 38 Anode 39 Plating solution conduction hole 40 Porous body 41 Plating solution introduction tube 45 Tube 47 Tube 59 Electrolyte passage section 60 Seal member 111 Barrier layer film forming unit 112 Seed layer film forming unit 113 Plating film film forming unit 114 Annealing unit 115 First cleaning unit 116 Hevel / back surface cleaning unit 117 Lid plating unit 118 Second cleaning unit 120 Load / unload unit 121 First polishing device 122 Second polishing device 131 First robot 132 Second robot 133 Third robot 134 Fourth robot 141 First aligner / film thickness measuring unit 142 Second aligner / film thickness measuring unit 143 First substrate reversing machine 144 Second substrate reversing machine 145 Temporary placing table 146 Film thickness measuring device 220 Waterproof cover 221 Spin chuck 222 Substrate holding part 224 Center nozzle 226 Edge nozzle 228 Back nozzle 300 Base plate 301 Unit 302 Rail 303 Guide rod 304 Roller 305 Upper bottom 306 Lower bottom 307 Groove 401 First plating film deposition unit 402 Second plating film deposition unit 403 Bevel / back surface cleaning unit 404 Annealing unit 405 Aligner / film thickness measurement unit 406 First robot 407 Second robot 408 Load unload 409 Indexer 410 Cassette 411 Chemical solution supply unit 412 Electrical control panel 413 Touch panel 414 Air supply or exhaust

Claims (5)

A loading / unloading unit for loading and unloading a semiconductor substrate having a circuit formed on its surface in a dry state, a metal plating film deposition unit for forming a metal plating film on the loaded semiconductor substrate, and a semiconductor substrate after plating film deposition A bevel / back surface cleaning unit for cleaning the bevel and the back surface, a lid plating unit for forming a lid plating film layer on the semiconductor substrate, a cleaning unit for cleaning the surface of the semiconductor substrate, and a barrier layer on the semiconductor substrate A barrier layer forming unit to be formed;
A seed layer film forming unit for forming a seed layer on the substrate; an aligner and film thickness measuring unit for measuring a film thickness of the semiconductor substrate and performing notch alignment for the film thickness measurement; and annealing for annealing the semiconductor substrate In a semiconductor substrate manufacturing apparatus that can selectively mount each unit consisting of units and includes a transport mechanism that transports the semiconductor substrate between the units,
A mounting portion of each unit has a guide, and each unit moves along the guide so that it can be mounted on the semiconductor manufacturing apparatus or removed from the semiconductor manufacturing apparatus and replaced with another unit. A semiconductor substrate characterized in that a semiconductor manufacturing apparatus is configured by freely combining units necessary in a semiconductor manufacturing process, and units for performing different processes in the semiconductor manufacturing apparatus can be exchanged. Manufacturing equipment. The semiconductor substrate manufacturing apparatus according to claim 1,
Each of the units is configured to have the same front opening size facing the transport mechanism. The semiconductor substrate manufacturing apparatus according to claim 1 or 2,
The mounting portion of each unit has a rail, the lower surface of each unit has a roller, and the unit is mounted or removed by moving the roller along the rail. A semiconductor substrate manufacturing apparatus. The semiconductor substrate manufacturing apparatus according to any one of claims 1 to 3,
Each unit has a roller and a screw at the bottom thereof, and the roller is protruded from the bottom of the unit only when the unit is moved by adjusting the screw, and when the unit is fixed, A semiconductor substrate manufacturing apparatus, wherein a roller is retracted. The semiconductor substrate manufacturing apparatus according to any one of claims 1 to 4,
An apparatus for manufacturing a semiconductor substrate, comprising: a control means, wherein the control means can freely set the execution / non-execution of the process processing or the processing path of the semiconductor substrate for each of the mounted units.

Images