JP2006307247A - Film deposition system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition system where, in the case, as masks having different patterns are exchanged, the same or different materials are stacked on a substrate, the masks can be correctly arranged to the substrate with high reproducibility, and the production can be performed at a low cost without enlarging the system itself. <P>SOLUTION: The inside of a film deposition chamber 12 is provided with: an evaporation source 4; a freely rotatable stage 2 where the arrangement of masks each having the same or different pattern is made possible at prescribed intervals on the same circumference; and a carrying means 6 capable of carrying the substrate. By the carrying means, the substrate is positioned on any mask, so as to be installed therein, thereafter, the stage is rotated and is carried to a position corresponding to the evaporation source, and film deposition to the substrate is performed through each mask. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a film forming apparatus that can form a film on a substrate surface, and more particularly to a film forming apparatus that can form a film in an arbitrary pattern on a substrate through a mask.

  In the case of forming a film with an arbitrary pattern on a substrate using a vapor deposition apparatus or a sputtering apparatus, it has been often performed to attach a mask made of metal or the like so as to cover a part of the substrate surface. In this case, the same or different materials are stacked on the substrate while changing to a mask having a different pattern depending on the film forming process, for example, manufacturing of a TMR (tunnel magnetoresistance) element or an EL (electroluminescence) element. There is something to form.

  In this case, because of the difference in the mask covering the substrate and the material to be deposited, once the substrate on which a layer is formed is taken out from the deposition apparatus into the atmosphere, the thin film formed on the substrate surface is modified. Problems occur. In addition, when a thin film is laminated by changing a mask having a different pattern for each layer, in order to form a film only at an appropriate position on the substrate, it is necessary to position the mask with high accuracy relative to the substrate.

  Therefore, on both sides of the film forming chamber that is a vacuum chamber, a spare chamber that is a load lock chamber is disposed, and a mask holder that holds a predetermined mask is disposed in advance in both the spare chambers, At the time of film formation, by moving the mask held by the mask holder from one of the preliminary chambers to the film formation chamber, positioning the mask with respect to the substrate placed in the film formation chamber, and performing film formation, A film forming apparatus capable of exchanging a mask is known (for example, Patent Document 1).

In this case, alignment means comprising a ball plunger and a contact hole is arranged in both the spare chambers, and the alignment means allows the mask to be accurately and reproducibly arranged on the substrate.
Japanese Unexamined Patent Application Publication No. 2004-55198 (see, for example, the description of the scope of claims).

  However, in the above, since replacement masks are pre-stocked in the spare chamber, when the multilayer film is formed on the substrate with a plurality of patterns, as many spare chambers are provided as the number of masks used for each film formation. In addition, it is necessary to store a plurality of masks in one spare chamber, which causes a problem that the apparatus itself is increased in size and costs are increased.

  Therefore, in view of the above points, the object of the present invention is to accurately and reproducibly arrange the mask on the substrate when the same or different materials are stacked on the substrate while exchanging the masks with different patterns. An object of the present invention is to provide a film forming apparatus that can be manufactured at low cost without increasing the size of the apparatus itself.

  In order to solve the above-described problems, the film forming apparatus of the present invention enables the arrangement of masks having the same or different patterns from each other at a predetermined interval on the same circumference with the evaporation source in the film forming chamber. The substrate is placed on one of the masks by positioning the substrate on one of the masks, and then the stage is rotated to evaporate. The film is transported to a position facing the source and can be formed on the substrate through a mask.

  According to the present invention, on the stage in the film forming chamber, masks having different patterns are arranged at predetermined intervals on the same circumference, and any of the masks used for film formation by the transport means A substrate is placed on the substrate, the stage is rotated, and the mask and substrate stacked one above the other are transported to a position facing the evaporation source to form a film. In this case, since a plurality of masks are stocked on the stage in the film formation chamber, it is not necessary to provide as many spare chambers as the number of masks even when forming a film using several types of masks.

  It is preferable that the mask is set on a mask holder placed on the stage and having an opening facing the substrate.

  It is preferable that the substrate is set on a substrate holder that can be assembled by fitting with the mask holder. In this case, if the mask is placed in the mask holder and the substrate is placed in the substrate holder, the substrate and the mask are positioned simply by assembling the substrate holder and the mask holder. Can be placed with good quality.

  If the transfer means is provided in the film formation chamber and the substrate can be transferred between masks in the same film formation chamber, the mask can be replaced while the vacuum atmosphere for film formation is maintained in the film formation chamber. It's okay.

  If a load lock chamber capable of maintaining a predetermined degree of vacuum is connected to the film formation chamber via a gate valve, for example, the substrate is carried into the film formation chamber without returning the film formation chamber to the atmosphere. It may be possible to carry out from the film forming chamber.

  If a plurality of the evaporation sources are arranged on the circumference that is concentric with the stage so that the same or different materials can be simultaneously formed on a plurality of substrates, when different materials are laminated, The film formation process may be performed in one film formation chamber. In addition, when the same material is stacked while exchanging with masks having different patterns, a plurality of substrates may be formed at the same time.

  If the stage is provided with a driving means and is movable in a direction perpendicular to the rotation direction of the stage, it can be used not only for attaching / detaching the substrate holder to / from the mask holder, but also, for example, toward the evaporation source during film formation. By moving the stage, a film formation space isolated from the atmosphere of the film formation chamber can be created.

  The evaporation source may be, for example, a sputter cathode that enables film formation by sputtering.

  As described above, the purpose of the film forming apparatus of the present invention is to accurately and reproduce the mask on the substrate when the same or different materials are stacked on the substrate while exchanging the masks with different patterns. The device can be arranged with good performance, and the device itself is not enlarged and can be manufactured at low cost.

  Referring to FIGS. 1 and 2, reference numeral 1 denotes a film forming apparatus of the present invention. The film forming apparatus 1 is configured as a sputtering apparatus and includes a chamber 12 to which a vacuum exhaust system 11 such as a rotary pump or a turbo molecular pump is connected. The chamber 12 forms a film forming chamber. A stage 2 is provided in the chamber 12.

  The stage 2 includes a central rotating plate 21 connected to a rotating shaft and a driving shaft, which will be described later, and a donut-shaped peripheral rotating plate 22 sandwiched by the central rotating plate 21. Nine circular openings 23 are formed on the peripheral rotating plate 22 at equal intervals on the same circumference, and the openings 23 constitute a mounting part that enables a mask holder to be described later to be mounted. To do. The rotary shaft 24 passes through a hollow drive shaft 31 provided so as to protrude into the chamber 12, and the rotary shaft 24 is fixed to a frame 26 provided above the chamber 12 via a joint 25. It connects with the drive means 27, such as.

  Two guide rods 32 extending in the vertical direction are provided on the top plate of the chamber 12 at the periphery of the portion of the drive shaft 31 that protrudes outward from the chamber 12. It penetrates through an opening formed in the slider 31a fixed at a predetermined position. The guide rod 32 is also provided with a pair of upper and lower stoppers 32a that abut against the surface of the slide 31a to limit the movement of the slide 31a in the vertical direction, and the slider 31a and the slider 31a are urged upward. A bellows 33 is provided between the top plate of the chamber 12 so as to be expandable and contractible, and the vacuum and the atmosphere are hermetically sealed.

  When the frame 26 is moved in the vertical direction by a drive device such as an air cylinder (not shown), the drive shaft 31 is moved in the vertical direction, and the stage 2 connected thereto can be raised and lowered in the chamber 12. In this case, the movement stroke of the stage 2 in the vertical direction can be adjusted by appropriately setting the formation position of the stopper 32a.

  Below the stage 2, three sputtering cathodes 4 are provided at a predetermined interval on a circumference that is concentric with the stage 2 to constitute an evaporation source. The sputtering cathode 4 is, for example, a magnetron type, has a known structure, and has a target (not shown) disposed to face the stage 2. In this case, each target of the sputtering cathode 4 is produced by a known method according to the composition of the thin film to be deposited on the substrate S, and can be made of the same or different materials.

  Then, the stage 2 is rotated, the opening 23 is moved to a position facing the target 41, a predetermined sputtering gas is introduced through a gas introduction means (not shown), and a sputtering power source (FIG. When a negative DC voltage or a high-frequency voltage is applied via a not-shown plasma, plasma is generated in front of the target and the target is sputtered.

  A shutter 42 that is rotatable with respect to the stage 2 is provided between the target of the sputtering cathode 4 and the stage 2 by a driving means 41 such as a motor. The shutter 42 shields the front of the target so that it is necessary. Accordingly, film formation on the substrate S becomes possible. Three heating means 5 are provided on the upper side of the stage 2 so as to face the sputtering cathode 4 respectively. The heating means 5 has, for example, a halogen lamp, and can heat the substrate S to a predetermined temperature according to the film forming process.

  A storage chamber 13 is formed on the side wall of the chamber 12 so as to protrude outward, and the storage chamber 13 is provided with a transfer means 6 for replacing a substrate holder, which will be described later, with a mask holder. The transport means 6 has a support shaft 61 that protrudes into the storage chamber 13, and an arm 62 having a fork-shaped tip is connected to the tip of the support shaft 61. In this case, the arm 62 can be expanded and contracted from the storage chamber 13 toward the chamber 12 by a driving means 63 such as an air cylinder.

  As shown in FIGS. 3 to 5, the substrate holder H is configured by assembling the substrate holder 7 and the mask holder 8 in the vertical direction, and is placed so as to be supported by the periphery of the opening 23 of the stage 2. Is done. In this case, the substrate holder 7 is made of a metal such as aluminum and is formed in a dish shape having a cylindrical outer peripheral wall. An opening 71 is formed at the center of the bottom plate of the substrate holder 7, and an annular extending member 72 is formed at the lowermost end of the opening 71 so as to extend inward.

  In this case, the shape of the opening 71 is substantially matched to the shape of the substrate S (in this embodiment, the shape of the opening 71 is square corresponding to the square substrate S). The substrate S supported by the extending member 72 is set at a predetermined position of the basic holder 7 (that is, the substrate is positioned) simply by dropping the substrate S into the opening 71 from above. An annular flange portion 73 is formed at the upper end of the substrate holder 7 so as to extend outward, and the substrate holder 7 on which the substrate S is set is conveyed by the conveying means 6 via the flange portion 73.

  The mask holder 8 located on the lower side is made of a metal such as aluminum and has a cylindrical shape. A through-hole 81 extending in the vertical direction is opened in the center of the mask holder 8. The through hole 81 is formed substantially parallel to the outer peripheral surface of the mask holder 8 from the upper surface to the substantially central portion, and is formed so as to be inclined toward the lower surface. Then, the outer peripheral wall of the substrate holder 7 is processed into a stepped shape (see FIG. 2), and the first concave portion 82 into which the small-diameter outer peripheral wall 74 of the substrate holder 7 is fitted is formed on the upper surface of the mask holder 8, The lower part of the substrate holder 7 and the upper part of the mask holder 8 are fitted and assembled.

  By the way, when the substrate S is heated to a predetermined temperature by the heating means 5, the substrate holder 1 itself is heated, and a portion fitted due to a difference in thermal expansion between the substrate holder 2 and the mask holder 3 due to a difference in shape. There is a risk of galling. For this reason, a part of the small-diameter outer peripheral wall 74 protruding to the lower side of the substrate holder 7 is formed as a tapered surface 75 inclined toward the inner side in the front end direction, and the outer peripheral wall corresponding to the tapered surface 75 is formed. A tapered surface 83 is formed on the side wall of the first recess 82 into which 74 is fitted. In addition, a single pin 76 protruding toward the mask holder 8 is provided on the bottom surface of the substrate holder 7, and a pin hole 84 into which the pin 76 is inserted is formed on the top surface of the mask holder 8.

  In addition, a second recess 85 is formed on the upper surface of the mask holder 8 so as to be positioned inside the first recess 82 and constitute a mask storage portion. The second recess 85 is positioned outside the periphery of the upper end of the through hole 81. The mask M is held by the flat surface 86 of the second recess 85. In this case, the shape of the second recess 85 is substantially matched to the shape of the mask M, and the mask M supported by the flat surface 86 can be removed by simply dropping the mask M from the upper side of the second recess 85. 8 is set at a predetermined position (that is, the substrate is positioned). When the mask M is set, the dimension in the depth direction is set so that the upper surface of the mask M is flush with the flat surface 86.

  At the upper end of the mask holder 8, as in the case of the substrate holder 7, an annular flange portion 87 is formed extending outward, and the mask M is set by the transport means 6 through the flange portion 87. The mask holder 8 can be transported alone or in a state in which the substrate holder 8 on which the substrate S is set is attached to the upper part of the mask holder 8.

  As a result, when the substrate holder 7 and the mask holder 8 are assembled, a part of the fitting portion is configured to overlap the tapered surfaces 75 and 83, so that the substrate holder 7 and the mask holder 8 are positioned with reference to the pin 76. In combination with the positioning of the substrate S and the mask M on the substrate holder 7 and the mask holder 8, respectively, the mask is accurately and reproducibly arranged on the substrate S.

  Further, since the tapered surfaces 75 and 83 are superposed and the portion where the pin 76 and the pin hole 84 are fitted is formed in one place, the substrate holder 1 itself is heated during film formation, and the substrate holder 7 and the mask holder 8, even if a difference in thermal expansion occurs, the difference in thermal expansion is absorbed by the superposed taper surfaces 75 and 83, thereby causing galling in the mated portion. In addition, the presence of the tapered surfaces 75 and 83 in the vicinity of the pin 76 prevents the pin 76 from galling into the pin hole 84. For this reason, the substrate holder 7 can be easily separated from the mask holder 8 simply by lifting the substrate holder 2 through the flange portion 73 by the transport means 6 after film formation.

  Next, the operation of the sputtering apparatus 1 of the present invention will be described. A mask holder 8 on which a mask M to be used in film formation is set is placed so as to be supported by the transport means 6 at the periphery of each opening 23 of the stage 2. In this case, each opening 23 is provided with a positioning pin (not shown) extending upward, and a pin hole (not shown) into which the positioning pin is inserted is provided on the bottom surface of the mask holder 3, and the stage 2. The mask holder 8 is positioned above.

  Next, the vacuum exhaust system 11 is operated to exhaust the chamber 12 to a predetermined degree of vacuum. When the pressure in the chamber 12 reaches a predetermined value, the substrate holder 7 on which the substrate S is set is carried into the chamber 12. In this case, a load lock chamber (not shown) capable of maintaining a predetermined degree of vacuum is connected to the storage chamber 13 so as to face the chamber 12 in which the film formation process is performed, and a substrate S is attached. It is preferable to stock the set substrate holder 7 in advance. Thereby, the substrate S may be carried into and out of the chamber 12 without returning the chamber 12 to the atmosphere.

  Then, after moving the gate valve to the open position, the substrate holder 7 is received from the load lock chamber by the transfer means 6, the arm 63 is extended and moved to the chamber 12, and the mask to be used in the first film formation It is positioned above the mask holder 8 on which M is set. In this case, the stage 2 is rotated so that the mask holder 8 is positioned in front of the storage chamber 13. Then, the stage 2 is raised via the drive shaft 31 to assemble the substrate holder 7 and the mask holder 8, and return the arm 63 of the transport means 6 to the storage chamber 13.

  Next, the stage 2 is rotated to move the sputtering cathode 4 to a position facing the one having the target formed from the material to be deposited first. In this case, the shutter 42 is in a closed position that shields the target, and in this state, a predetermined sputtering gas is introduced through the gas introduction means, and a negative DC voltage or a high-frequency voltage is supplied to the target through the sputtering power source. Is generated, plasma is generated in front of the target, the target is sputtered, and when the shutter 42 is moved to the open position, a film is formed on the substrate S through the mask M set in the mask holder 8. 42 is again moved to the closed position.

  Next, when stacking on the deposited layer via another mask M, the stage 2 is rotated until the mask holder 8 with the substrate holder 7 assembled is positioned in front of the storage chamber 13. In this case, the stage 2 is preferably configured so as to be capable of forward and reverse rotation. Then, the substrate holder 7 is temporarily received by the transport means 6 in the reverse operation to the above, and is made to stand by above the stage 2. Then, after the stage 2 is rotated until the mask holder 8 on which the mask M to be used in the next film formation is set is located in front of the storage chamber 13, the stage 2 is moved up so that the substrate holder 7 and the other The mask holder 8 is assembled and replaced.

  Next, the stage 2 is rotated to move the sputtering cathode 4 to a position facing a target having a target formed from the material to be deposited next, the shutter 42 is moved to the open position, and the mask holder 8 is moved. The film is formed on the substrate S through the mask M set in (1). The above procedure is repeated to replace the mask with a different pattern or to stack a desired material by replacing the material to be deposited.

  Accordingly, even when film formation is performed using several types of masks M, it is not necessary to provide as many spare chambers as the number of masks M or to store a plurality of masks in one spare chamber. 1 can be miniaturized, and the mask M and the film forming material can be exchanged in the chamber 12 which is a film forming chamber. In addition, without stopping the operation of the sputtering cathode 4, Since the film can be stacked on the substrate, the formation speed of the stacked film can be increased.

  In the present embodiment, the case using the substrate holder H has been described as an example. However, the present invention is not limited to this, and the substrate S can be positioned by positioning with respect to the mask M installed on the stage 2. If it is a thing, the form will not be ask | required. Further, although the description has been given of the case where the sputtering cathode 4 is installed on the lower side of the stage 2, an evaporation source such as the sputtering cathode 4 can be installed on the upper side of the stage 2. In this case, the mask holder 8 may be mounted on the substrate holder 7, and the mask holder 8 is suspended below the stage 2, and the substrate holder 7 is fitted below the mask holder 8. And may be assembled.

  In the present embodiment, the film formation position and the substrate carry-in / carry-out position do not coincide with each other in the rotation direction of the stage 2, but the substrate is carried in and out during the film formation process at the evaporation source. The substrate loading and unloading positions may be set as appropriate so as to be possible. Further, although an example in which a load lock chamber is provided to stock the substrate holder 8 has been described, a load chamber for stocking the mask holder 8 may be provided. In the present embodiment, the operation of the sputtering apparatus 1 has been described on the assumption that the mask holder 8 is installed on the stage 2. However, the present invention is not limited to this. For example, the substrate holder 7 and the mask holder 8 are assembled. Then, it may be carried into the film forming chamber 12.

  Furthermore, in this embodiment, the stage is moved up and down when the substrate holder 7 is attached to and detached from the mask holder 8, but the present invention is not limited to this, and the support shaft 61 of the transport means 6 can be moved up and down. You may form in. In addition, although the shutter 42 has been described, an adhesion prevention plate is provided on the lower side of the stage 2 so as to surround the opening 23, and when the stage 2 is lowered, the atmosphere in the film formation chamber 12 is reached. A film formation space that is isolated from the above may be created. The number of openings 23 to be formed in the stage 2 and the number of sputtering cathodes 4 that are evaporation sources are appropriately set according to the film forming process.

FIG. 6 is a cross-sectional view illustrating a structure of a film formation apparatus of the present invention. FIG. 6 is a cross-sectional view illustrating a structure of a film formation apparatus of the present invention. Sectional drawing explaining a board | substrate holder. (A) And (b) is a figure explaining a substrate holder. (A) And (b) is a figure explaining a mask holder.

Explanation of symbols

1 Film deposition equipment (sputtering equipment)
2 Stage 23 Opening 24 Rotating shaft 27 Driving means 4 Evaporation source (sputtering cathode)
7 Substrate holder 8 Mask holder H Substrate holder

Claims (8)

In the film forming chamber, an evaporation source, a rotatable stage capable of arranging masks having the same or different patterns at a predetermined interval on the same circumference, and a transport means capable of transporting the substrate After the substrate is placed on one of the masks by this transfer means, the stage is rotated and transferred to a position facing the evaporation source, and the film is formed on the substrate through the mask. A film forming apparatus characterized by being made possible. 2. The film forming apparatus according to claim 1, wherein the mask is set on a mask holder placed on the stage and provided in an opening facing the substrate. 3. The film forming apparatus according to claim 2, wherein the substrate is set on a substrate holder that can be assembled by fitting with the mask holder. 4. The film formation according to claim 1, wherein the transfer unit is provided in the film formation chamber, and the substrate can be exchanged between masks in the same film formation chamber. apparatus. 5. The film forming apparatus according to claim 1, wherein a load lock chamber capable of maintaining a predetermined degree of vacuum is connected to the film forming chamber via a gate valve. 6. A plurality of the evaporation sources are arranged on a circumference concentric with the stage, and simultaneous film formation on a plurality of substrates of the same or different materials is possible. The film-forming apparatus in any one of. The film forming apparatus according to claim 1, wherein a driving unit is provided on the stage so that the stage is movable in a direction perpendicular to the rotation direction of the stage. The film forming apparatus according to claim 1, wherein the evaporation source is a sputtering cathode that enables film formation by a sputtering method.

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