JP2006269598A - Solid-state imaging device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging device whereby the traceability in the unit of devices can be ensured. <P>SOLUTION: The method of manufacturing the solid-state imaging device 200 includes a solid-state imaging device section 100 formed on a semiconductor substrate 101 and a plurality of electrode pads 103. When the electrode pads 103 are formed; dummy electrode pads 109 are also formed to spaces among the electrode pads 103, and manufacturing information is marked onto the dummy electrode pads 109 so as to easily ensure the traceability of the solid-state imaging device 200 without the need for design revision or the like of the solid-state imaging device 200. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a solid-state imaging device including a solid-state imaging device portion formed on a semiconductor substrate and a plurality of electrode pads.

  Conventionally, a semiconductor package in which a semiconductor chip formed with a semiconductor element such as a solid-state imaging element is packaged is marked with information in package units such as the date and time when the semiconductor chip was packaged, resulting in a defect in the semiconductor package. In some cases, based on this information, the cause of defects in manufacturing the semiconductor package is clarified. However, since the information marked on the semiconductor package is not information for each semiconductor chip, traceability in units of semiconductor chips cannot be ensured.

  In general, information for specifying a wafer from which a semiconductor chip is divided is marked for each wafer. For this reason, after the wafer dicing process, wafer information and the like for specifying the wafer from which the semiconductor chip is divided become unclear. Conventionally, when a defect occurs in a semiconductor package, the wafer is identified from the package date and time marked on the semiconductor package to clarify the cause of the defect and identify a defective product. It takes time to specify the wafer and there is a possibility that the wafer cannot be specified.

  Therefore, a technique for marking wafer information or the like in a semiconductor chip has been proposed (see Patent Documents 1 and 2). Since the technique described in Patent Document 1 performs marking on the surface of a semiconductor element, it cannot be applied to a solid-state imaging element. Since the technique described in Patent Document 2 newly adds a region for marking in a semiconductor chip, it is difficult to apply in the case of a solid-state imaging device having no element region.

JP 2002-280276 A Japanese Patent Laid-Open No. 7-307257

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for manufacturing a solid-state imaging device capable of ensuring traceability in units of devices.

  The method for manufacturing a solid-state imaging device according to the present invention is a method for manufacturing a solid-state imaging device including a solid-state imaging device portion formed on a semiconductor substrate and a plurality of electrode pads, and the plurality of electrode pads on the semiconductor substrate. The manufacturing information marking process which marks the manufacturing information of the said solid-state image sensor in the area | region between the area | regions in which is formed.

  According to this method, since manufacturing information of the solid-state imaging device is marked in the existing space, the traceability of the solid-state imaging device can be ensured without changing the design of the solid-state imaging device.

  In the method for manufacturing a solid-state imaging device according to the present invention, in the manufacturing information marking step, the manufacturing information is divided and marked into two or more regions among regions between the plurality of electrode pads. .

  According to this method, the amount of manufacturing information can be increased.

  The manufacturing method of the solid-state imaging device of the present invention includes a step of forming a marking film made of the same material as the electrode pad in a region where the manufacturing information is to be marked before the manufacturing information marking step.

  According to this method, since the manufacturing information is marked on the marking film made of the same material as the electrode pad, the visibility of the manufacturing information can be improved.

  In the method for manufacturing a solid-state imaging device of the present invention, the marking film is formed simultaneously with the electrode pad.

  According to this method, a marking film can be formed without adding a manufacturing process.

  In the method for manufacturing a solid-state imaging device according to the present invention, the manufacturing information is composed of numbers defined by OCR-B font.

  According to this method, manufacturing information can be directly read by a person.

  The solid-state image pickup device of the present invention is a solid-state image pickup device including a solid-state image pickup element portion formed on a semiconductor substrate and a plurality of electrode pads, and the regions where the plurality of electrode pads on the semiconductor substrate are formed. A marking area in which manufacturing information of the solid-state imaging device is marked is provided in the area between the two.

  The solid-state imaging device according to the present invention has a plurality of the marking areas, and the manufacturing information is divided and marked in each of the plurality of marking areas.

  In the solid-state imaging device of the present invention, a marking film made of the same material as the electrode pad is formed in the marking area, and the manufacturing information is marked above the marking film.

  In the solid-state imaging device of the present invention, the marking film is formed on the same surface as the electrode pad.

  In the solid-state imaging device of the present invention, the manufacturing information is composed of numbers defined by the OCR-B font.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the solid-state image sensor which can ensure the traceability per element can be provided.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a plan view schematically showing a schematic configuration of a solid-state imaging device for explaining an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view illustrating both the solid-state imaging device portion and the electrode pad portion of the solid-state imaging device shown in FIG. 1, and (a) is an electrode pad portion where an electrode pad to be wire-bonded later is formed. The figure which shows together the cross section of a solid-state image sensor part, and (b) is a figure which shows the cross section of the electrode pad part in which the dummy electrode pad which is an electrode pad which is not wire-bonded later is formed, and a solid-state image sensor part collectively is there.

  As shown in FIG. 1, the solid-state image sensor 200 includes a solid-state image sensor unit 100 formed on a semiconductor substrate 101 and a plurality of positions formed at predetermined positions in a region excluding the solid-state image sensor unit 100 on the semiconductor substrate 101. A dummy electrode pad 109 (a marking film according to the claims) formed in a region between the electrode pad 103 (bonding pad or TEG pad) and a region on the semiconductor substrate 101 where the plurality of electrode pads 103 are formed Corresponding). The region referred to in the present embodiment is a range that can be seen when the solid-state imaging device 200 is viewed from above (a plan view shown in FIG. 1).

  The solid-state image sensor unit 100 includes a large number of photoelectric conversion elements, a vertical transfer unit that transfers charges generated by the photoelectric conversion elements in the vertical direction, a horizontal transfer unit that transfers charges transferred from the vertical transfer unit in the horizontal direction, An output amplifier unit that outputs a signal corresponding to the charge transferred from the horizontal transfer unit, a color filter, a micro lens, and the like are included. When the solid-state imaging device 200 is a MOS type, a MOS circuit is included instead of the vertical transfer unit, the horizontal transfer unit, and the output amplifier unit.

  The region where the dummy electrode pad 109 is formed (corresponding to the marking region in the claims) is a region for marking manufacturing information for ensuring traceability in units of the solid-state imaging device 200.

  The manufacturing information includes a lot number unique to each solid-state image sensor divided from the wafer, wafer identification information for identifying the wafer, in-wafer position information indicating the position of each solid-state image sensor in the wafer, and the like. Information. The manufacturing information is, for example, information indicated by numbers, the lot number is indicated by a 4-digit number, the wafer identification information is indicated by a 2-digit number, and the in-wafer position information is indicated by a 4-digit number.

  The size of the dummy electrode pad 109 may be a size that does not protrude when the number is marked and does not short-circuit with the electrode pad 103. In the example of FIG. 1, each of the upper four dummy electrode pads 109 can be marked with a number, and each of the lower three dummy electrode pads 109 can be marked with a number. Shall be able to.

The electrode pad 103 and the dummy electrode pad 109 can be formed by a process similar to that of a conventional electrode pad.
That is, the charge transfer electrode 104 having a two-layer structure or a single-layer structure is formed on the semiconductor substrate 101, and a light-shielding film that shields light other than the photoelectric conversion elements formed in the semiconductor substrate 101 is formed on the charge-transfer electrode 104. After the insulating film is formed, an electrode pad material (for example, aluminum or aluminum alloy) constituting the electrode pad is formed on the insulating film, and a first region that is a region where the electrode pad 103 is to be formed, and a dummy Patterning is performed so that the electrode pad material remains in the second region where the electrode pad 109 is to be formed, and patterned electrode pad material is formed in the first region and the second region. As a result, the electrode pad material formed in the first region becomes the electrode pad 103, and the electrode pad material formed in the second region becomes the dummy electrode pad 109. 2 is a combination of the insulating film and the passivation film on the light shielding film.

  Next, a planarization film 105 is formed on the passivation film, and the planarization film 105 on the electrode pad 103 and the dummy electrode pad 109 is selectively removed by etching to form an opening, and the electrode pad 103 and the dummy electrode are formed. The pad 109 is exposed. Next, color filters 106R, 106G, and 106B having a predetermined pattern are formed by photolithography. Next, a planarizing film 107 is formed, and the planarizing film 107 on the electrode pad 103 and the dummy electrode pad 109 is selectively etched away to form an opening, and the electrode pad 103 and the dummy electrode pad 109 are exposed. Let Finally, a microlens material is deposited and patterned, and the patterned microlens material is reflowed and cured to form a microlens 108 having a desired shape, thereby manufacturing a solid-state imaging device as shown in FIG. .

  Then, after the solid-state imaging device 200 shown in FIG. 2 is manufactured, a number indicating manufacturing information is marked on the exposed surface of the dummy electrode pad 109 with a laser or the like. For example, among the dummy electrode pads 109 shown in FIG. 1, the four dummy electrode pads 109 on the upper side are marked with a four-digit lot number divided into one digit, and the three dummy electrode pads 109 on the lower side are marked. Among them, wafer identification information is marked on the leftmost dummy electrode pad 109, and the 4-digit position information in the wafer is divided into two digits and marked on the remaining dummy electrode pads 109.

  In addition, it is preferable that the number marked at this time is a number defined by the OCR-B font defined by JIS standard JISX9001. The OCR-B font is a font that can be directly read by humans, and is generally a font used in a common product code (JIS standard JISX0501) and a logistics product code (JIS standard JISX0502). When manufacturing information is confirmed later, the confirmation becomes easy.

  After marking the manufacturing information, the process proceeds to a dicing process. After the dicing process, the solid-state image sensor 200 is packaged, and the manufacture of the solid-state image sensor package is completed.

  As described above, when the electrode pad 103 is formed, the dummy electrode pad 109 is also formed in a vacant space between the electrode pads 103, and manufacturing information is marked on the dummy electrode pad 109. Thus, the traceability of the solid-state image sensor 200 can be easily ensured without changing the design of the solid-state image sensor 200.

  For example, in the case of a 1 / 1.7 type solid-state imaging device chip, there are 34 square electrode pads, and the size of each electrode pad is about 100 μm × 100 μm. Moreover, although the space | interval between each electrode pad changes for every place by wiring routing, it is about 50 micrometers-200 micrometers. If the size of the manufacturing information number is 80 μm × 80 μm, there is a vacant space enough to mark about 12 numbers in total between each electrode pad, so the dummy electrode pad 109 is formed in this space. Thus, manufacturing information can be divided and marked in the chip area of the solid-state imaging device 200.

  In this embodiment, since the number is marked on the dummy electrode pad 109, when the number marked here is visually observed, the number can be favorably observed by the reflected light from the dummy electrode pad 109. The visibility of numbers improves.

  In addition, according to the present embodiment, in the conventional manufacturing process of the solid-state imaging device, the above effect can be obtained only by changing the shape of the mask for patterning the electrode pad material.

  In this embodiment, the dummy electrode pad 109 is formed in an empty space between the electrode pads 103 and the manufacturing information is marked thereon. However, the dummy electrode pad 109 is not formed. May be. In this case, it is only necessary to mark a number in the region where the dummy electrode pad 109 of FIG. 1 is formed on the surface of the planarizing film 107. Even in this case, it is possible to visually recognize the number.

  In the present embodiment, the electrode pad 103 and the dummy electrode pad 109 are formed at the same time, that is, the electrode pad 103 and the dummy electrode pad 109 are formed on the same surface. It does not need to be formed. The dummy electrode pad 109 is provided for the purpose of improving the visibility of manufacturing information. Therefore, the dummy electrode pad 109 may be formed in a region between the regions where the electrode pad 103 is formed on the semiconductor substrate 101 before the step of marking the manufacturing information, and the formation timing thereof is limited. Not.

  In this embodiment, the opening k is formed above the dummy electrode pad 109. However, the opening k may not be formed. In this case, a number is marked on the surface of the planarizing film 107 above the dummy electrode pad 109, but since the dummy electrode pad 109 exists below the number, the visibility of the number is improved. To do.

  In the present embodiment, the manufacturing information is marked after the solid-state imaging device 200 is manufactured. However, the timing for marking the manufacturing information may be after the solid-state imaging device 200 is inspected. In this case, information such as inspection results can be digitized and marked, which can be used for later management.

  In this embodiment, a plurality of dummy electrode pads 109 are formed. However, when manufacturing information is small, the number of dummy electrode pads 109 may be one.

The top view which shows typically schematic structure of the solid-state image sensor for describing embodiment of this invention The cross-sectional schematic diagram which illustrated together the solid-state image sensor part and electrode pad part of the solid-state image sensor shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Solid-state image sensor part 101 Semiconductor substrate 103 Electrode pad 104 Charge transfer electrode 105,107 Planarization film 106R, 106G, 106B Color filter 108 Micro lens 109 Dummy electrode pad 200 Solid-state image sensor

Claims (10)

A method for manufacturing a solid-state imaging device including a solid-state imaging device portion and a plurality of electrode pads formed on a semiconductor substrate,
A method for manufacturing a solid-state imaging device, including a manufacturing information marking step for marking manufacturing information of the solid-state imaging device in a region between regions where the plurality of electrode pads are formed on the semiconductor substrate. It is a manufacturing method of the solid-state image sensing device according to claim 1,
In the manufacturing information marking step, a manufacturing method of a solid-state imaging device that divides and marks the manufacturing information into two or more regions among regions between the plurality of electrode pads. It is a manufacturing method of the solid-state image sensing device according to claim 1 or 2,
The manufacturing method of a solid-state image sensor including the process of forming the film | membrane for marking which consists of the same material as the said electrode pad in the area | region which should mark the said manufacturing information before the said manufacturing information marking process. It is a manufacturing method of the solid-state image sensing device according to claim 3,
The method of manufacturing a solid-state imaging device, wherein the marking film is formed simultaneously with the electrode pad. It is a manufacturing method of the solid-state image sensing device according to any one of claims 1 to 4,
The manufacturing information is a manufacturing method of a solid-state imaging device including numbers defined by OCR-B font. A solid-state imaging device including a solid-state imaging device portion and a plurality of electrode pads formed on a semiconductor substrate,
A solid-state imaging device comprising: a marking region in which manufacturing information of the solid-state imaging device is marked in a region between regions where the plurality of electrode pads are formed on the semiconductor substrate. The solid-state imaging device according to claim 6,
A plurality of the marking areas;
A solid-state imaging device in which the manufacturing information is divided and marked in each of the plurality of marking regions. The solid-state imaging device according to claim 6 or 7,
In the marking area, a marking film made of the same material as the electrode pad is formed,
The manufacturing information is a solid-state imaging device marked above the marking film. The solid-state imaging device according to claim 8,
The marking film is a solid-state imaging device formed on the same surface as the electrode pad. A solid-state imaging device according to any one of claims 6 to 9,
The manufacturing information is a solid-state imaging device composed of numbers defined by OCR-B font.

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