JP2006245984A - Left-handed medium not using via - Google Patents

Left-handed medium not using via Download PDF

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JP2006245984A
JP2006245984A JP2005058443A JP2005058443A JP2006245984A JP 2006245984 A JP2006245984 A JP 2006245984A JP 2005058443 A JP2005058443 A JP 2005058443A JP 2005058443 A JP2005058443 A JP 2005058443A JP 2006245984 A JP2006245984 A JP 2006245984A
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conductive pattern
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substrate
medium
handed
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JP3947793B2 (en
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Atsushi Sanada
篤志 真田
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Yamaguchi University NUC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
    • H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/007—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of negative effective refractive index materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Waveguide Connection Structure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To realize a left-handed medium not using a via which can realize electrically equivalent parallel inductances by a combination of a conductor pattern provided on the top surface of a substrate and a conductor pattern provided on a ground surface. <P>SOLUTION: In Fig.(A) of a conductive pattern for the unit cell of an upper substrate 2 of Fig.(A) and a conductive pattern of a ground plane 3 of Fig.(B), and in particular in Fig.(B), vertically narrow lines representing electrically equivalent inductances are shown. A top surface substrate 2 and the ground surface 3, when they constitute a left-handed medium 1 having a gap and being disposed above and below, a series inductance that is electrically equivalent, is formed by the connection of a part of the island-shaped pattern of the ground surface 3 and the ground part of the ground plane. In addition, a capacitance is formed between the conductive pattern of the upper substrate 2 and the conductive pattern 31 of the ground plane 3 and plays the role of a series capacitance inside the medium. Left-handed characteristics are shown by the mutual working of both of these quantities. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明はビア（スルーホール）を用いない、左手系特性を持つ２次元構造周期構造の媒質に関する。   The present invention relates to a medium having a two-dimensional structure periodic structure having a left-handed characteristic without using a via (through hole).

金属、誘電体、磁性体、超伝導体などの小片を、波長に対して十分短い間隔（波長の２０分の１程度以下）で並べることで自然にはない性質を待った媒質を人工的に構成することができる。この媒質を自然にある媒質を超えると言う意味でメタマテリアル（ｍｅｔａｍａｔｅｒｉａｌｓ）と呼んでいる。メタマテリアルの性質は、単位粒子の形状、材質およびそれらの配置により様々に変化するが、中でも、等価的な誘電率εと透磁率μとが同時に負となるメタマテリアルは、その電界と磁界と波数ベクトルが左手系をなすことから「左手系媒質」（Ｌｅｆｔ−Ｈａｎｄｅｄ Ｍａｔｅｒｉａｌｓ）と名づけられた。これに対して、等価的な誘電率εと透磁率μとが同時に正となる通常の媒質は「右手系媒質（Ｌｅｆｔ−Ｈａｎｄｅｄ Ｍａｔｅｒｉａｌｓ」と呼ばれる。特に、「左手系媒質」は、バックワード波と呼ばれる、波の群速度（エネルギーの伝播する速度）と位相速度（位相の進む速度）の符号が逆転している波の存在や、また、非伝播領域で指数関数的に減衰する波であるエバネセント波の増幅、等の特異な性質を持つことが１９６７年にロシアの物理学者Ｖｅｓｅｌａｇｏによって予言されている。これら誘電率ε、透磁率μと媒質との関係領域は、図１に示すように、誘電率εの正負及び透磁率μの正負に応じた第１象限〜第４象限の媒質に分類できる。   Artificially constructs a medium waiting for unnatural properties by arranging small pieces of metal, dielectrics, magnetic materials, superconductors, etc., at sufficiently short intervals (less than 1/20 of the wavelength). can do. This medium is called metamaterials in the sense that it exceeds a natural medium. The properties of metamaterials vary depending on the shape, material, and arrangement of unit particles. Among them, metamaterials whose equivalent permittivity ε and permeability μ are negative at the same time are the electric and magnetic fields. Since the wave vector forms a left-handed system, it is named “Left-Handed Materials” (Left-Handed Materials). On the other hand, a normal medium in which the equivalent permittivity ε and permeability μ are simultaneously positive is referred to as “left-handed materials”. In particular, the “left-handed medium” is a backward wave. This is the presence of waves whose signs of wave group velocity (velocity of energy propagation) and phase velocity (velocity of phase advance) are reversed, or waves that decay exponentially in non-propagation regions It is predicted by Russian physicist Veselago in 1967 that the evanescent wave is amplified and the like. The medium can be classified into the first quadrant to the fourth quadrant according to the positive / negative of the dielectric constant ε and the positive / negative of the magnetic permeability μ.

従来より、左手系媒質がいくつか発明されているので、以下に代表的な物を例示する。スプリット・リング共振器とワイヤ共振器とを単位セルとして構成した左手系人工媒質があり、左手系特性を示すことが実験的にも示されている（例えば、非特許文献１参照。）。この構造は共振器を用いるため共振型左手系媒質と呼ばれる。この媒質は、スプリット・リング共振器とワイヤ共振器の共振周波数付近でのみ動作することができるため、共振による損失が非常に大きくかつ動作帯域も非常に狭いものであった。   Conventionally, some left-handed media have been invented, and typical examples will be exemplified below. There is a left-handed artificial medium in which a split ring resonator and a wire resonator are configured as unit cells, and it has been experimentally shown to exhibit left-handed characteristics (for example, see Non-Patent Document 1). Since this structure uses a resonator, it is called a resonant left-handed medium. Since this medium can operate only in the vicinity of the resonance frequency of the split ring resonator and the wire resonator, the loss due to resonance is very large and the operation band is very narrow.

共振器を用いないで左手系特性を得る１次元の非共振型の左手系媒質として、マイクロストリップ線路のもの（例えば、非特許文献２参照。）、あるいはコプレーナ線路（Ｃｏｐｌａｎａｒ Ｗａｖｅｇｕｉｄｅ：ＣＰＷ）を基にした１次元の構成のもの（例えば、非特許文献３参照。）もある。これらの媒質は、隣接する単位セル金属パターン間の直列容量と、金属パターンとグランド面を接続するビアにより生ずる並列インダクタンスにより左手系特性を得ている。ところが、基板を貫通するビアの密度は制作上限られているため、この制限により単位セルの大きさを小さくすることが難しく、集積化が困難といった問題があった。また、基板面のみの加工に加えて基板を貫通する金属を作成するため、製造コストがかかるといった問題点もあった。   A one-dimensional non-resonant type left-handed medium that obtains left-handed characteristics without using a resonator is based on a microstrip line (see, for example, Non-Patent Document 2) or a coplanar line (CPW). Some have a one-dimensional configuration (for example, see Non-Patent Document 3). These media have left-handed characteristics due to the series capacitance between adjacent unit cell metal patterns and the parallel inductance generated by the vias connecting the metal patterns and the ground plane. However, since the density of vias penetrating the substrate is limited to the upper limit of production, there is a problem that it is difficult to reduce the size of the unit cell due to this limitation and integration is difficult. Moreover, since the metal which penetrates a board | substrate is created in addition to the process of only a board | substrate surface, there also existed a problem that manufacturing cost started.

また、２次元の非共振型左手系媒質として、直列容量と並列インダクタンスをＬＣ集中定数チップ素子で構成したもの（例えば、非特許文献４参照。）、金属パターンのみにより構成した分布定数型のもの（例えば、非特許文献５参照。）がある。いずれの場合にも、接地面に対する並列インダクタンスを構成するために、基板を貫通するインダクタチップまたはビア（スルーホール）を用いており前述の問題を孕んでいる。   In addition, as a two-dimensional non-resonant type left-handed medium, a serial capacitance and a parallel inductance are configured with LC lumped constant chip elements (for example, see Non-Patent Document 4), or a distributed constant type configured only with a metal pattern. (For example, refer nonpatent literature 5.). In either case, an inductor chip or a via (through hole) penetrating the substrate is used in order to configure a parallel inductance with respect to the ground plane, and the above-mentioned problem is envisaged.

ビアを用いないで左手系特性を持たせるよう工夫した１次元線路も知られており、この構造は並列のインダクタンスをビアで基板裏面の接地面に直接接続する代わりに、大きな対地容量を持つ大面積金属パッチに接続した構成である（例えば、非特許文献６参照。）。ところが、この構成は大面積の金属パッチを必要とするため、集積化には向かない。また、２次元媒質への拡張もなされていない。
Ｄ．Ｒ．Ｓｍｉｔｈ，Ｗ．Ｊ．Ｐａｄｉｌｌａ，Ｄ．Ｃ．Ｖｉｅｒ，Ｓ．Ｃ．Ｎｅｍａｔ−Ｎａｓｓｅｒ，ａｎｄ Ｓ．Ｓｃｈｕｌｔｚ，“Ｃｏｍｐｏｓｉｔｅ ｍｅｄｉｕｍ ｗｉｔｈ ｓｉｍｕｌｔａｎｅｏｕｓｌｙ ｎｅｇａｔｉｖｅ ｐｅｒｍｅａｂｉｌｉｔｙ ａｎｄ ｐｅｒｍｉｔｔｉｖｉｔｙ，”Ｐｈｙｓ．Ｒｅｖ．Ｌｅｔｔ．，ｖｏｌ．８４，ｎｏ．１８，ｐｐ．４１８４−４１８７，Ｍａｙ ２０００． Ｃ．Ｃａｌｏｚ，ａｎｄ Ｔ．Ｉｔｏｈ，“Ａｐｐｌｉｃａｔｉｏｎ ｏｆ ｔｈｅ ｔｒａｎｓｍｉｓｓｉｏｎ ｌｉｎｅ ｔｈｅｏｒｙ ｏｆ ｌｅｆｔ−ｈａｎｄｅｄ（ＬＨ）ｍａｔｅｒｉａｌｓ ｔｏ ｔｈｅ ｒｅａｌｉｚａｔｉｏｎ ｏｆ ａ ｍｉｃｒｏｓｔｒｉｐ ＬＨ ｔｒａｎｓｍｉｓｓｉｏｎ ｌｉｎｅ”，ＩＥＥＥ−ＡＰＳ Ｉｎｔ‘ｌ Ｓｙｍｐ．Ｄｉｇｅｓｔ，ｖｏｌ．２，ｐｐ．４１２−４１５，Ｊｕｎｅ ２００２． Ａ．Ｇｒｂｉｃ ａｎｄ Ｇ．Ｖ．Ｅｌｅｆｔｈｅｒｉａｄｅｓ，“Ｅｘｐｅｒｉｍｅｎｔａｌ ｖｅｒｉｆｉｃａ−ｔｉｏｎ ｏｆ ｂａｃｋｗａｒｄ−ｗａｖｅ ｒａｄｉａｔｉｏｎ ｆｒｏｍ ａ ｎｅｇａｔｉｖｅ ｒｅｆｒａｃｔｉｖｅ ｉｎｄｅｘ ｍａｔｅｒｉａｌ，”Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，Ｖｏｌ．９２，Ｎｏ．１０，ｐｐ．５９３０−５９３５，Ｎｏｖ．２００２． Ａ．Ｋ．Ｉｙｅｒ ａｎｄ Ｇ．Ｖ．Ｅｌｅｆｔｈｅｒｉａｄｅｓ，“Ｎｅｇａｔｉｖｅ ｒｅｆｒａｃｔｉｖｅ ｉｎｄｅｘ ｍｅｄｉａ ｕｓｉｎｇ ｐｅｒｉｏｄｉｃａｌｌｙ Ｌ−Ｃ ｌｏａｄｅｄ Ｔｒａｎｓｍｉｓｓｉｏｎ ｌｉｎｅｓ，”ＩＥＥＥ−ＭＴＴ Ｉｎｔ‘ｌ Ｓｙｍｐ．Ｄｉｇｅｓｔ，ｐｐ １０６７−１０７０，Ｊｕｎｅ ２００２． Ａｔｓｕｓｈｉ Ｓａｎａｄａ，Ｃｈｒｉｓｔｏｐｈｅ Ｃａｌｏｚ ａｎｄ Ｔａｔｓｕｏ Ｉｔｏｈ，｀｀Ｐｌａｎａｒ Ｄｉｓｔｒｉｂｕｔｅｄ Ｓｔｒｕｃｔｕｒｅｓ ｗｉｔｈ Ｎｅｇａｔｉｖｅ Ｒｅｆｒａｃｔｉｖｅ Ｉｎｄｅｘ，’’ＩＥＥＥ Ｔｒａｎｓ．ｏｎ Ｍｉｃｒｏｗ−ａｖｅ Ｔｈｅｏｒｙ ａｎｄ Ｔｅｃｈｎｉｑｕｅｓ，Ｖｏｌ．５２，Ｎｏ．４，ｐｐ．１２５２−１２６３，Ａｐｒｉｌ ２００４． Ａｔｓｕｓｈｉ Ｓａｎａｄａ，Ｋｏｉｃｈｉ Ｍｕｒａｋａｍｉ，Ｓｈｕｊｉ Ａｓｏ，Ｈｉｒｏｓｈｉ Ｋｕｂｏ，ａｎｄ Ｉｋｕｏ Ａｗａｉ，“Ａ ｖｉａ−ｆｒｅｅ ｍｉｃｒｏｓｔｒｉｐ ｌｅｆｔ−ｈａｎｄｅｄ ｔｒａｎｓｍｉｓｓｉｏｎ ｌｉｎｅ，”ＩＥＥＥ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｍｉｃｒｏｗａｖｅ Ｓｙｍｐｏｓｉｕｍ Ｄｉｇｅｓｔ，ｐｐ．３０１−３０４，Ｆｏｒｔ Ｗｏｒｔｈ，Ｊｕｎｅ ２００４． There is also a known one-dimensional line designed to have left-handed characteristics without using vias, and this structure has a large ground capacity instead of connecting parallel inductance directly to the ground plane on the back of the board with vias. It is the structure connected to the area metal patch (for example, refer nonpatent literature 6). However, this configuration requires a large area metal patch and is not suitable for integration. Also, it has not been extended to a two-dimensional medium.
D. R. Smith, W.M. J. et al. Padilla, D .; C. Vier, S .; C. Nemat-Nasser, and S.M. Schultz, “Composite medium with symmetrically negative permeability and permittivity,” Phys. Rev. Lett. , Vol. 84, no. 18, pp. 4184-4187, May 2000. C. Caloz, and T.M. Itoh, “Application of the transmission line theory of left-handed (LH) material to the realization of a microstrip LH transmission line”, S Digest, vol. 2, pp. 412-415, June 2002. A. Grbic and G. V. Eleferiaides, “Experimental verifica-tion of backing-wave radiation from negative reflexive index material,“ Journal of Applied Ph.D. 92, no. 10, pp. 5930-5935, Nov. 2002. A. K. Iyer and G.M. V. Eleferiaides, “Negative reflexive index media using periodic L-C loaded Transmission lines,” IEEE-MTT Int'l Symp. Digest, pp 1067-1070, June 2002. Atsushi Sanada, Christophe Caloz and Tatsuo Itoh, ｀ ｀ Planar Distributed Structures With Negative Reflexive Index, '' IEEE Trans. on Micro-ave Theory and Technologies, Vol. 52, no. 4, pp. 1252-1263, April 2004. Atsushi Sanada, Koichi Murakami, Shuji Aso, Hiroshi Kubo, and Ikuo Awaii, “Avia-free microstripe-EffectsMidEstronomyEfforts” 301-304, Fort Worth, June 2004.

従来のものは基板を貫通し上面基板とグランド面との間を接続してインダクタンスを形成するためのビア（スルーホール）を穿孔しなければならないが、そのために設けるビアの密度の上限は限られているため、集積化が困難といった問題があった。また、基板面のみの加工に加えて基板を貫通する金属を作成するため、製造コストがかかるといった問題点もあった。そこで、本発明は、直接基板表面と裏面のグランド面とを結ぶビアを用いることなく、基板上面に施した導体パターンとグランド面に施した導体パターンとの組み合わせにより電気的に等価な並列インダクタンスを実現し、左手系特性を持つ２次元構造周期構造の媒質を実現することを目的とする。   In the conventional one, a via (through hole) for forming inductance by penetrating the substrate and connecting between the upper substrate and the ground surface must be drilled, but the upper limit of the density of vias provided for this purpose is limited. Therefore, there is a problem that integration is difficult. Moreover, since the metal which penetrates a board | substrate is created in addition to the process of only a board | substrate surface, there also existed a problem that manufacturing cost started. Therefore, the present invention provides an electrically equivalent parallel inductance by combining a conductor pattern applied to the upper surface of the substrate and a conductor pattern applied to the ground surface without using a via directly connecting the substrate surface and the ground surface on the back surface. The purpose is to realize a medium having a two-dimensional periodic structure having left-handed characteristics.

上記目的を達成するために、この発明の請求項１に係るビアを用いない左手系媒質は、基板上面に複数の単位セルの導電パターンを形成した上面基板と、導電パターンを形成したグランド面を上下に配置して左手系媒質を構成し、上面基板の導電パターンとグランド面の導電パターンとの間でキャパシタンスを形成し、グランド面の導電パターンの一部とグランド面のグランド部分でもって電気的に等価な並列インダクタンスを形成する構成とした。   In order to achieve the above object, a left-handed medium that does not use a via according to claim 1 of the present invention includes a top substrate in which conductive patterns of a plurality of unit cells are formed on a top surface of a substrate, and a ground plane in which conductive patterns are formed. A left-handed medium is formed by arranging the top and bottom, and a capacitance is formed between the conductive pattern on the top substrate and the conductive pattern on the ground plane. The parallel inductance equivalent to is formed.

この発明の請求項２に係るビアを用いない左手系媒質は、基板上面に複数の単位セルの導電パターンを形成した上面基板と、導電パターンを形成したグランド面を間隔をもって上下に配置して左手系媒質を構成し、上面基板の導電パターンとグランド面の導電パターンとの間でキャパシタンスを形成し、グランド面の導電パターンの一部とグランド面のグランド部分でもって電気的に等価な並列インダクタンスを形成する構成とし、上記基板上面の単位セルの導電パターンは方形金属パッチで形成され、該基板上面の単位セルの導電パターンに対向するグランド面の導電パターンは、２辺をグランド領域で隔離され、他の１辺の部分で導電体に接続された三角形の金属パッチが、グランド領域で隔離された２辺でなる頂点で対向するように配置された４つの三角形の金属パッチの組み合わせで形成される構成とした。   A left-handed medium that does not use vias according to a second aspect of the present invention is a left-handed medium in which a top substrate on which a conductive pattern of a plurality of unit cells is formed on a top surface of a substrate and a ground plane on which the conductive pattern is formed are arranged vertically with a gap therebetween. Forming a capacitance between the conductive pattern on the upper substrate and the conductive pattern on the ground plane, and providing an electrically equivalent parallel inductance with a part of the conductive pattern on the ground plane and the ground portion on the ground plane. The conductive pattern of the unit cell on the upper surface of the substrate is formed of a rectangular metal patch, and the conductive pattern of the ground surface facing the conductive pattern of the unit cell on the upper surface of the substrate is separated by a ground region on two sides, The triangular metal patch connected to the conductor on the other side is arranged so that it faces the apex consisting of two sides separated by the ground area. It has a structure formed by the combination of four triangular metal patches.

この発明の請求項３に係るビアを用いない左手系媒質は、基板上面に複数の単位セルの導電パターンを形成した上面基板と、導電パターンを形成したグランド面を間隔をもって上下に配置して左手系媒質を構成し、上面基板の導電パターンとグランド面の導電パターンとの間でキャパシタンスを形成し、グランド面の導電パターンの一部とグランド面のグランド部分でもって電気的に等価な並列インダクタンスを形成する構成とし、上記基板上面の単位セルの導電パターンは菱形の金属パッチで形成され、該基板上面の単位セルの導電パターンに対向するグランド面の導電パターンは、長辺をグランド領域で隔離され、他の２辺でなる頂点が導電体に接続された三角形の金属パッチが、頂点で対向するように配置された４つの三角形の金属パッチの組み合わせで形成される構成とした。   According to a third aspect of the present invention, there is provided a left-handed medium that does not use vias, the upper surface substrate on which the conductive patterns of a plurality of unit cells are formed on the upper surface of the substrate, and the ground plane on which the conductive patterns are formed are arranged vertically with a space therebetween. Forming a capacitance between the conductive pattern on the upper substrate and the conductive pattern on the ground plane, and providing an electrically equivalent parallel inductance with a part of the conductive pattern on the ground plane and the ground portion on the ground plane. The conductive pattern of the unit cell on the upper surface of the substrate is formed by a rhombus metal patch, and the conductive pattern of the ground surface opposite to the conductive pattern of the unit cell on the upper surface of the substrate is separated by the ground region on the long side. Four triangular metal patches are arranged in such a way that the triangular metal patches whose vertexes on the other two sides are connected to the conductor are opposed to each other at the vertexes. It has a structure formed by the combination of Ji.

この発明の請求項４に係るビアを用いない左手系媒質は、上記請求項２または請求項３記載のビアを用いない左手系媒質において、上面基板の導電パターンとグランド面の導電パターンとの間でキャパシタンスを形成し、グランド面の導電パターンにおける上面基板の導電パターンの縁と対向する部分と、グランド面のグランド部分でもって電気的に等価な並列インダクタンスを形成するように構成した。   According to a fourth aspect of the present invention, there is provided a left-handed medium that does not use a via, in the left-handed medium that does not use a via according to the second or third aspect, between the conductive pattern on the upper surface substrate and the conductive pattern on the ground plane. Then, a capacitance is formed, and a portion of the conductive pattern on the ground surface facing the edge of the conductive pattern of the upper surface substrate and an electrically equivalent parallel inductance are formed by the ground portion of the ground surface.

これにより、本発明のビアを用いない左手系媒質では、本媒質の動作周波数は、スケール則により構造を拡大・縮小することにより自由に変化させることができるため、ビア密度の縛りを超えてスケーラビリティを持たせることで、単位セルの集積度を飛躍的に上げる設計が可能となる。また、ビアを必要としないので、ビア作製のプロセスを省くことができるため、製造コストが抑えられるといったメリットがある。   As a result, in the left-handed medium that does not use vias according to the present invention, the operating frequency of the medium can be freely changed by enlarging / reducing the structure according to the scaling rule, so scalability beyond the limit of via density By providing this, it is possible to design to dramatically increase the degree of integration of unit cells. In addition, since a via is not required, the process of manufacturing the via can be omitted, and there is an advantage that the manufacturing cost can be suppressed.

以上のように、本発明のビアを用いない左手系媒質は、次のような効果を奏する。即ち、本媒質の動作周波数は、スケール則により構造を拡大・縮小することにより自由に変化させることができるため、本発明によりビア密度の縛りを超えてスケーラビリティを持たせることで、単位セルの集積度を飛躍的に上げる設計が可能となる。また、ビアを必要としないので、ビア作製のプロセスを省くことができるため、製造コストを抑えることができる。   As described above, the left-handed medium using no via according to the present invention has the following effects. In other words, the operating frequency of the medium can be freely changed by enlarging / reducing the structure according to the scaling rule. Therefore, the integration of unit cells can be achieved by providing scalability beyond the limit of via density according to the present invention. The design which raises the degree dramatically becomes possible. In addition, since a via is not required, the process for producing the via can be omitted, and thus the manufacturing cost can be reduced.

本発明の左手系媒質は、上面基板の上面導体パーンとグランド面との間にビアを設けることなく、基板上面に複数の単位セルの導電パターンを形成した上面基板と、導電パターンを形成したグランド面を間隔をもって上下に配置して左手系媒質を構成し、上面基板の導電パターンとグランド面の導電パターンとの間でキャパシタンスを形成し、グランド面の導電パターンの一部とグランド面のグランド部分でもって電気的に等価な並列インダクタンスを形成することを特徴とするものであり、以下に、本発明の実施例について図面を用いて詳細に説明する。   The left-handed medium of the present invention includes a top substrate in which conductive patterns of a plurality of unit cells are formed on the top surface of the substrate without providing vias between the top surface conductor pattern of the top substrate and the ground surface, and a ground in which the conductive pattern is formed. A left-handed medium is formed by arranging the surfaces vertically with a gap, and a capacitance is formed between the conductive pattern on the top substrate and the conductive pattern on the ground plane, and a part of the conductive pattern on the ground plane and the ground portion on the ground plane Therefore, an electrically equivalent parallel inductance is formed. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図２は本発明のビアを用いない左手系媒質の第１の実施例の概略図を示し、１は左手系媒質であり、複数の単位セルとなる導電パターン２１で構成される上面基板２と、複数の導電パターン３１が形成されたグランド面３を間隔をもって上下に配置した周期構造としている。図３に左手系媒質１の単位セルの構造を示し、上面基板２の導電パターン２１と、グランド面３上の導電パターン３１が対向配置されている。   FIG. 2 is a schematic diagram of a first embodiment of a left-handed medium that does not use vias according to the present invention. Reference numeral 1 denotes a left-handed medium, and an upper substrate 2 composed of a conductive pattern 21 serving as a plurality of unit cells. A periodic structure in which the ground surface 3 on which a plurality of conductive patterns 31 are formed is arranged vertically with a gap therebetween. FIG. 3 shows the structure of the unit cell of the left-handed medium 1, in which the conductive pattern 21 on the top substrate 2 and the conductive pattern 31 on the ground plane 3 are arranged to face each other.

図４は上面基板２の表面パターンを示し、単位セルは破線で示す横ａ、縦ｂのサイズであり、誘電体基板の表面に方形金属パッチ（グレー部分）が形成されている。上面基板２の単位セルの導電パターン２１に対向する裏面のグランド面３には、図５のように、グランド面の導電パターンは、２辺をグランド領域で隔離され、他の１辺の部分ｃで導電体に接続された三角形の金属パッチが、グランド領域で隔離された２辺でなる頂点で対向するように配置された４つの三角形の金属パッチ（グレー部分）の組み合わせでなる導電パターン３１が形成されている。   FIG. 4 shows the surface pattern of the top substrate 2, and the unit cell has a horizontal a and vertical b size indicated by a broken line, and a rectangular metal patch (gray portion) is formed on the surface of the dielectric substrate. As shown in FIG. 5, the ground surface 3 on the back surface of the upper surface substrate 2 facing the conductive pattern 21 of the unit cell has two sides separated by a ground region, and a portion c on the other side c. A conductive pattern 31 composed of a combination of four triangular metal patches (gray portions) arranged so that the triangular metal patches connected to the conductor in FIG. Is formed.

図６には、図６（Ａ）の上面基板２の単位セルの導電パターンと、図６（Ｂ）のグランド面３の導電パターンを並べて示している。特に図６（Ｂ）には、各部のパラメータが記入されており、縦の細い濃線は電気的に等価な並列インダクタンスを示し、上面基板２とグランド面３を間隔をもって上下に配置して左手系媒質１を構成した時に、グランド面３上の導電パターンの一部とグランド面のグランド部分が接続されることによって電気的に等価な並列インダクタンスを形成する。ここで、電気的に等価な並列インダクタンスはグランド面３の導電パターンにおける上面基板２の導電パターンの縁と対向する部分に形成される。   6 shows the conductive pattern of the unit cell of the upper surface substrate 2 in FIG. 6A and the conductive pattern of the ground surface 3 in FIG. 6B side by side. In particular, FIG. 6B shows the parameters of each part. The thin vertical dark lines indicate electrically equivalent parallel inductances, and the upper substrate 2 and the ground plane 3 are arranged vertically with a space left and right. When the system medium 1 is configured, an electrically equivalent parallel inductance is formed by connecting a part of the conductive pattern on the ground surface 3 and the ground portion of the ground surface. Here, the electrically equivalent parallel inductance is formed in a portion of the conductive pattern of the ground plane 3 facing the edge of the conductive pattern of the upper surface substrate 2.

また、上面基板２の導電パターン２１とグランド面３の導電パターン３１との間でキャパシタンスを形成し、媒質中の直列の容量の役割を果たす。上述の構成でなる本発明の第１の実施例における左手系媒質の電気的な等価回路を図７の単位セルの構造に示している。この構造は、これらの両者の相互の働きにより左手系特性を示すものである。   In addition, a capacitance is formed between the conductive pattern 21 on the upper surface substrate 2 and the conductive pattern 31 on the ground surface 3, and serves as a series capacitance in the medium. An electric equivalent circuit of the left-handed medium in the first embodiment of the present invention having the above-described configuration is shown in the unit cell structure of FIG. This structure exhibits left-handed characteristics due to the mutual action of both of them.

一般に２次元結晶に対して、図８（Ａ）のようなｋｘ（＝２π/λｘ），ｋｙ（＝２π/λｙ）（ここで、λｘおよびλｙはそれぞれｘ方向およびｙ方向の波長）とすると、平面上の点Γ，Ｘ，Ｍで囲まれる３角形の部分はブリルアンゾーンと呼ばれる。   In general, for a two-dimensional crystal, when kx (= 2π / λx) and ky (= 2π / λy) (where λx and λy are wavelengths in the x and y directions, respectively) as shown in FIG. A triangular portion surrounded by points Γ, X, and M on the plane is called a Brillouin zone.

分散特性の理論と三次元電磁界数値シミュレーションとの比較については、非特許文献７に詳述されている。
Ａｔｓｕｓｈｉ Ｓａｎａｄａ，Ｃｈｒｉｓｔｏｐｈｅ Ｃａｌｏｚ ａｎｄ Ｔａｔｓｕｏ Ｉｔｏｈ，“Ｐｌａｎａｒ Ｄｉｓｔｒｉｂｕｔｅｄ Ｓｔｒｕｃｔｕｒｅｓ ｗｉｔｈ Ｎｅｇａｔｉｖｅ Ｒｅｆｒａｃｔｉｖｅ Ｉｎｄｅｘ”ＩＥＥＥ Ｔｒａｎｓ．ｏｎ Ｍｉｃｒｏｗａｖｅ Ｔｈｅｏｒｙ ａｎｄ Ｔｅｃｈｎｉｑｕｅｓ，Ｖｏｌ．５２，Ｎｏ．４，ｐｐ．１２５２−１２６３，Ａｐｒｉｌ ２００４． The comparison between the theory of dispersion characteristics and the three-dimensional electromagnetic field numerical simulation is described in detail in Non-Patent Document 7.
Atsushi Sanada, Christophe Caloz and Tatsuo Itoh, “Planar Distributed Structures with Negative Reflexive Index” IEEE Trans. on Microwave Theory and Technologies, Vol. 52, no. 4, pp. 1252-1263, April 2004.

図６（Ｂ）の各部のパラメータを表１の値にしたときの、ブリルアンゾーン境界上の分散特性の三次元電磁界数値シミュレーション結果は図８（Ｂ）に示すようになった。横軸はブリルアンゾーンのΓ、Ｘ、Ｍポイント示し、縦軸は周波数を示す。図８（Ｂ）は結晶中の波の分散関係（周波数ｆと波数β＝（ｋｘ２＋ｋｙ２）１／２の関係）を示したもので、横軸βは、
Γ−Ｘの範囲では ０≦ｋｘ≦π/ａ，ｋｙ＝０
Ｘ−Ｍの範囲では ｋｘ＝π/ａ，０≦ｋｙ≦π/ａ
Ｍ−Ｍの範囲では ０≦ｋｘ＝ｋｙ≦π/ａ
のように、ｋｘおよびｋｙを変化させたときの波数βの値を示す。２次元結晶中の波の分散関係は慣例的にこの軸上に描かれる。 FIG. 8B shows the result of the three-dimensional electromagnetic field numerical simulation of the dispersion characteristics on the Brillouin zone boundary when the parameters of each part in FIG. The horizontal axis indicates Γ, X, and M points in the Brillouin zone, and the vertical axis indicates the frequency. FIG. 8B shows a wave dispersion relationship (frequency f and wave number β = (kx2 + ky2) 1/2 ) in the crystal, where the horizontal axis β
In the range of Γ-X, 0 ≦ kx ≦ π / a, ky = 0
In the range of X-M, kx = π / a, 0 ≦ ky ≦ π / a
In the range of MM, 0 ≦ kx = ky ≦ π / a
As shown, the value of the wave number β when kx and ky are changed is shown. The wave dispersion relation in a two-dimensional crystal is conventionally drawn on this axis.

このうち最も周波数の低い伝送モードは７．９６ＧＨzから８．０２ＧＨｚの範囲で、ＬＨ（左手系媒質）モードはその傾きが負となっている。これは群速度が負であるバックワード波の存在を示している。即ち、これはこの媒質が左手系特性を示す媒質であることの証拠である。   Among these, the transmission mode with the lowest frequency is in the range of 7.96 GHz to 8.02 GHz, and the slope of the LH (left-handed medium) mode is negative. This indicates the presence of a backward wave with a negative group velocity. That is, this is evidence that this medium is a medium exhibiting left-handed characteristics.

このように、本発明のビアを用いない左手系媒質では、本媒質の動作周波数は、スケール則により構造を拡大・縮小することにより自由に変化させることができるため、ビア密度の縛りを超えてスケーラビリティを持たせることで、単位セルの集積度を飛躍的に上げる設計が可能となる。また、ビアを必要としないので、ビア作製のプロセスを省くことができるため、製造コストが抑えられるといったメリットがある。   In this way, in the left-handed medium that does not use vias of the present invention, the operating frequency of the medium can be freely changed by enlarging or reducing the structure according to the scaling rule, thus exceeding the limit of via density. By providing scalability, it is possible to design to dramatically increase the degree of integration of unit cells. In addition, since a via is not required, the process of manufacturing the via can be omitted, and there is an advantage that the manufacturing cost can be suppressed.

次に他の実施例につき説明する。図９は本発明のビアを用いない左手系媒質の第２の実施例の概略図を示し、１は左手系媒質であり、複数の単位セルとなる導電パターン４１で構成される上面基板４と、複数の導電パターン３１が形成されたグランド面３を間隔をもって上下に配置した周期構造としている。図１０に左手系媒質１の単位セルの構造を示し、上面基板４の導電パターン４１と、グランド面３上の導電パターン３１が対向配置されている。   Next, another embodiment will be described. FIG. 9 is a schematic view of a second embodiment of the left-handed medium that does not use vias according to the present invention. Reference numeral 1 denotes a left-handed medium, and an upper substrate 4 composed of conductive patterns 41 serving as a plurality of unit cells. A periodic structure in which the ground surface 3 on which a plurality of conductive patterns 31 are formed is arranged vertically with a gap therebetween. FIG. 10 shows the structure of the unit cell of the left-handed medium 1, in which the conductive pattern 41 on the upper surface substrate 4 and the conductive pattern 31 on the ground surface 3 are arranged to face each other.

図１１は上面基板４の表面パターンを示し、単位セル４１は破線で示す横ａ、縦ｂのサイズであり、誘電体基板の表面に菱形金属パッチ（グレー部分）４２が形成されている。上面基板４の単位セル４１に含まれる導電パターンに対向する裏面のグランド面３には、図１２のように、グランド面の導電パターンは、長辺をグランド領域で隔離され、他の２辺でなる頂点ｃが導電体に接続された三角形の金属パッチ（グレー部分）が、頂点で対向するように配置された４つの三角形の金属パッチの組み合わせでなる導電パターン３１が形成されている。   FIG. 11 shows the surface pattern of the upper substrate 4, and the unit cell 41 has a horizontal a and vertical b size indicated by a broken line, and a rhombus metal patch (gray portion) 42 is formed on the surface of the dielectric substrate. As shown in FIG. 12, the back surface of the ground surface 3 facing the conductive pattern included in the unit cell 41 of the upper surface substrate 4 has a long side separated by a ground region, and the other two sides of the ground surface. A conductive pattern 31 is formed which is a combination of four triangular metal patches arranged so that a triangular metal patch (gray portion) having a vertex c connected to a conductor is opposed at the vertex.

図１３には、図１３（Ａ）の上面基板４の単位セルの導電パターンと、図１３（Ｂ）のグランド面３の導電パターンを並べて示している。特に図１３（Ｂ）には、各部のパラメータが記入されており、斜めの細い濃線は電気的に等価な並列インダクタンスを示し、上面基板４とグランド面３を、間隔をもって上下に配置して左手系媒質１を構成した時に、グランド面３上の導電パターンの一部とグランド面３のグランド部分が接続されることによって電気的に等価な並列インダクタンスを形成する。ここで、電気的に等価な並列インダクタンスはグランド面３の導電パターンにおける上面基板４の導電パターンの縁と対向する部分に形成される。   FIG. 13 shows the conductive pattern of the unit cell of the upper surface substrate 4 in FIG. 13A and the conductive pattern of the ground surface 3 in FIG. 13B side by side. In particular, in FIG. 13B, parameters of each part are entered, and the slanted dark line indicates an electrically equivalent parallel inductance, and the upper surface substrate 4 and the ground surface 3 are arranged above and below at intervals. When the left-handed medium 1 is configured, an electrically equivalent parallel inductance is formed by connecting a part of the conductive pattern on the ground surface 3 and the ground portion of the ground surface 3. Here, the electrically equivalent parallel inductance is formed in a portion of the conductive pattern of the ground plane 3 facing the edge of the conductive pattern of the upper surface substrate 4.

また、上面基板４の導電パターン４１とグランド面３の導電パターン３１との間でキャパシタンスを形成し、媒質中の直列の容量の役割を果たす。上述の構成でなる本発明の第１の実施例における左手系媒質の電気的な等価回路を図１４の単位セルの構造に示している。この構造は、これらの両者の相互の働きにより左手系特性を示すものである。   Further, a capacitance is formed between the conductive pattern 41 on the upper surface substrate 4 and the conductive pattern 31 on the ground surface 3, and serves as a series capacitance in the medium. An electric equivalent circuit of the left-handed medium in the first embodiment of the present invention having the above-described configuration is shown in the unit cell structure of FIG. This structure exhibits left-handed characteristics due to the mutual action of both of them.

図１３（Ｂ）の各部のパラメータを表２の値にしたときの、ブリルアンゾーン境界上の分散特性のシミュレーション結果は図１５に示すようになった。横軸はブリルアンゾーンのΓ、Ｘ、Ｍポイント示し、縦軸は周波数を示す。このうち最も周波数の低い伝送モードは７．５４ＧＨzから８．２４ＧＨzの範囲で、ＬＨモードはその傾きが負となっている。これは群速度が負であるバックワード波の存在を示している。即ち、これはこの媒質が左手系特性を示す媒質であることの証拠である。   FIG. 15 shows the simulation result of the dispersion characteristic on the Brillouin zone boundary when the parameters of each part in FIG. The horizontal axis indicates Γ, X, and M points in the Brillouin zone, and the vertical axis indicates the frequency. Among these, the transmission mode with the lowest frequency is in the range of 7.54 GHz to 8.24 GHz, and the slope of the LH mode is negative. This indicates the presence of a backward wave with a negative group velocity. That is, this is evidence that this medium is a medium exhibiting left-handed characteristics.


このように、本発明のビアを用いない左手系媒質では、本媒質の動作周波数は、スケール則により構造を拡大・縮小することにより自由に変化させることができるため、ビア密度の縛りを超えてスケーラビリティを持たせることで、単位セルの集積度を飛躍的に上げる設計が可能となる。また、ビアを必要としないので、ビア作製のプロセスを省くことができるため、製造コストが抑えられるといったメリットがある。   In this way, in the left-handed medium that does not use vias of the present invention, the operating frequency of the medium can be freely changed by enlarging or reducing the structure according to the scaling rule, thus exceeding the limit of via density. By providing scalability, it is possible to design to dramatically increase the degree of integration of unit cells. In addition, since a via is not required, the process of manufacturing the via can be omitted, and there is an advantage that the manufacturing cost can be suppressed.

本発明のビアを用いない左手系媒質は、超高周波用のアンテナ、サブ波長用焦点レンズ、超小型通信用の共振器、フィルタ、発振器等のデバイスの構成要素として広く利用できる。   The left-handed medium that does not use a via according to the present invention can be widely used as a component of a device such as an ultra-high frequency antenna, a sub-wavelength focus lens, a micro communication resonator, a filter, and an oscillator.

誘電率ε，透磁率μと媒質の関係領域図である。FIG. 5 is a relationship region diagram of a dielectric constant ε, a magnetic permeability μ, and a medium. 本発明の左手系媒質の第１の実施例の概略図である。It is the schematic of the 1st Example of the left-handed system medium of this invention. 実施例１の左手系媒質の単位セル構造である。2 is a unit cell structure of a left-handed medium according to the first embodiment. 実施例１の左手系媒質の上面基板の表面パターンである。3 is a surface pattern of an upper surface substrate of a left-handed medium of Example 1. FIG. 実施例１の左手系媒質の上面基板のグランド面パターンである。2 is a ground plane pattern of an upper surface substrate of a left-handed medium according to the first embodiment. 実施例１の上面基板の単位セルの導電パターンとグランド面の導電パターン図である。FIG. 3 is a conductive pattern diagram of a unit cell and a ground surface of an upper surface substrate of Example 1. 実施例１における左手系媒質の電気的な等価回路と単位セルの構造である。2 shows an electric equivalent circuit of a left-handed medium and a unit cell structure in Embodiment 1. 実施例１のブリルアンゾーン境界上の分散特性のシミュレーション結果である。It is a simulation result of the dispersion | distribution characteristic on the Brillouin zone boundary of Example 1. FIG. 本発明の左手系媒質の第２の実施例の概略図である。It is the schematic of the 2nd Example of the left hand type | system | group medium of this invention. 実施例２の左手系媒質の単位セル構造である。3 is a unit cell structure of a left-handed medium according to the second embodiment. 実施例２の左手系媒質の上面基板の表面パターンである。6 is a surface pattern of an upper substrate of a left-handed medium according to Example 2. 実施例２の左手系媒質の上面基板のグランド面パターンである。7 is a ground plane pattern of an upper surface substrate of a left-handed medium according to the second embodiment. 実施例２の上面基板の単位セルの導電パターンとグランド面の導電パターン図である。FIG. 6 is a conductive pattern diagram of a unit cell and a ground surface of an upper surface substrate of Example 2. 実施例２における左手系媒質の電気的な等価回路と単位セルの構造である。6 shows an electric equivalent circuit of a left-handed medium and a unit cell structure in Embodiment 2. 実施例２のブリルアンゾーン境界上の分散特性のシミュレーション結果である。It is a simulation result of the dispersion | distribution characteristic on the Brillouin zone boundary of Example 2. FIG.

符号の説明Explanation of symbols

１ 左手系媒質
２ 上面基板
２１ 方形金属パッチの導電パターン
３ グランド面
３１ グランド面の浮島状の導電パターン
４ 上面基板
４１ 菱形金属パッチの導電パターン
DESCRIPTION OF SYMBOLS 1 Left-handed medium 2 Upper surface board 21 Conductive pattern of rectangular metal patch 3 Ground surface 31 Floating island-shaped conductive pattern of ground surface 4 Upper surface substrate 41 Conductive pattern of rhombus metal patch

Claims (4)

基板上面に複数の単位セルの導電パターンを形成した上面基板と、導電パターンを形成したグランド面を上下に配置して左手系媒質を構成し、上面基板の導電パターンとグランド面の導電パターンとの間でキャパシタンスを形成し、グランド面の導電パターンの一部とグランド面のグランド部分でもって電気的に等価な並列インダクタンスを形成することを特徴とするビアを用いない左手系媒質。   An upper surface substrate in which conductive patterns of a plurality of unit cells are formed on the upper surface of the substrate and a ground surface on which the conductive pattern is formed are arranged vertically to form a left-handed medium, and the conductive pattern on the upper surface substrate and the conductive pattern on the ground surface are A left-handed medium that does not use vias, wherein a capacitance is formed between them and an electrically equivalent parallel inductance is formed by a part of the conductive pattern on the ground plane and the ground portion on the ground plane. 上記基板上面の単位セルの導電パターンは方形金属パッチで形成され、該基板上面の単位セルの導電パターンに対向するグランド面の導電パターンは、２辺をグランド領域で隔離され、他の１辺の部分で導電体に接続された三角形の金属パッチが、グランド領域で隔離された２辺でなる頂点で対向するように配置された４つの三角形の金属パッチの組み合わせで形成されることを特徴とする請求項１記載のビアを用いない左手系媒質。   The conductive pattern of the unit cell on the upper surface of the substrate is formed by a rectangular metal patch, and the conductive pattern of the ground surface opposite to the conductive pattern of the unit cell on the upper surface of the substrate is separated by two ground sides in the ground region, A triangular metal patch connected to a conductor in part is formed by a combination of four triangular metal patches arranged to face each other at two vertexes separated by a ground region. A left-handed medium that does not use the via according to claim 1. 上記基板上面の単位セルの導電パターンは菱形の金属パッチで形成され、該基板上面の単位セルの導電パターンに対向するグランド面の導電パターンは、長辺をグランド領域で隔離され、他の２辺でなる頂点が導電体に接続された三角形の金属パッチが、頂点で対向するように配置された４つの三角形の金属パッチの組み合わせで形成されることを特徴とする請求項１記載のビアを用いない左手系媒質。   The conductive pattern of the unit cell on the upper surface of the substrate is formed by a diamond-shaped metal patch, and the conductive pattern of the ground surface opposite to the conductive pattern of the unit cell on the upper surface of the substrate is separated by the ground region at the long side, and the other two sides 2. The via according to claim 1, wherein the triangular metal patch having a vertex connected to the conductor is formed by a combination of four triangular metal patches arranged to face each other at the vertex. There is no left-handed medium. 上面基板の導電パターンとグランド面の導電パターンとの間でキャパシタンスを形成し、グランド面の導電パターンにおける上面基板の導電パターンの縁と対向する部分と、グランド面のグランド部分でもって電気的に等価な並列インダクタンスを形成することを特徴とする請求項２または請求項３記載のビアを用いない左手系媒質。   A capacitance is formed between the conductive pattern of the upper surface substrate and the conductive pattern of the ground surface, and the portion of the ground surface conductive pattern that faces the edge of the conductive pattern of the upper surface substrate is electrically equivalent to the ground portion of the ground surface. 4. A left-handed medium that does not use vias according to claim 2, wherein a parallel inductance is formed.
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