JP2006237262A - Heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus for stably supporting substrates. <P>SOLUTION: The heat treatment apparatus is provided, at the upper surface of a heat treatment plate 141, with a plurality of supporting members 146 for supporting the lower surface of a substrate W. This supporting member 146 is provided in the manner that the member more separately provided to the external side from the center C of the lower surface of the substrate W is projected higher from the upper surface of the heat treatment plate 141. Accordingly, when the substrate W is warped in the lower side as the projected shape due to the heat treatment, the lower surface of the substrate W is never separated too much from the supporting member 146 and thereby the substrate W is supported stably. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a heat treatment apparatus for heat-treating a substrate.

  In the photoresist processing step in the manufacture of semiconductor devices, heat treatment (pre-baking) after applying a resist solution on the surface of a semiconductor wafer (hereinafter referred to as “wafer”), or heat treatment after pattern exposure ( Various heat treatments such as post-exposure baking are performed.

  These heat treatments are usually performed by a heat treatment apparatus. This heat treatment apparatus has a thick disc-shaped hot plate made of aluminum in a processing vessel, and the lower surface of the disc-shaped wafer is applied to a plurality of support members provided on the upper surface of the hot plate. The wafer is heated by heating the heating plate to a predetermined temperature using a heating element built in the heating plate (see, for example, Patent Document 1).

JP 2000-183071 A

  By the way, a normal substrate has a thin flat plate shape, but when the substrate is heated from the lower surface by a hot plate, the peripheral edge of the substrate rises due to thermal stress, and the substrate protrudes downward with the central portion at the top. Deforms to warped. However, in the conventional heat treatment apparatus, when the substrate is warped, the lower surface of the substrate is lifted away from the support member, and the substrate is supported by the support member only at the central portion. There was a problem that became unstable. Furthermore, there is a possibility that the substrate is tilted due to poor balance. In this case, the substrate is heated unevenly because a large amount of heat is transmitted to the side closer to the hot plate due to the inclination of the substrate and less heat is transferred to the side away from the hot plate. There was a risk of unevenness.

  An object of the present invention is to provide a heat treatment apparatus that can stably support a substrate.

  In order to solve the above problems, according to the present invention, an apparatus for supporting and heating a substrate on a heat treatment plate, comprising a plurality of support members for supporting the lower surface of the substrate on the upper surface of the heat treatment plate, The heat treatment apparatus is provided in which each of the support members is provided so as to protrude higher from the upper surface of the heat treatment plate as the support member is separated from the center of the lower surface of the substrate. According to such a heat treatment apparatus, when the substrate is warped downward by heating, the lower surface of the substrate is not separated from the support member, and the substrate can be stably supported. Furthermore, you may provide the raising / lowering mechanism which raises / lowers each said supporting member, respectively.

  According to the present invention, there is also provided an apparatus for heat-treating a substrate with a heat treatment plate, wherein when the substrate is transferred onto the heat treatment plate, a plurality of elevating pins that support the lower surface of the substrate and move up and down and heat-treat the substrate. There is provided a heat treatment apparatus comprising a plurality of support members for supporting the lower surface of the substrate on the heat treatment plate, and an elevating mechanism for elevating and lowering each of the support members. According to such a heat treatment apparatus, when the substrate is warped downward by heating, the position of the support member can be adjusted in accordance with the lower surface of the substrate. Therefore, the substrate can be supported stably.

  Furthermore, a sensor that detects that the upper end portion of the support member has contacted the lower surface of the substrate may be provided. You may make it raise / lower each said supporting member based on the curvature of the board | substrate measured previously. Further, the warpage of the substrate may be measured by the amount of elevation of each support member when the upper end portion of each support member contacts the lower surface of the substrate. Each of the support members may support a portion other than the central portion of the lower surface of the substrate.

  According to the present invention, even when the substrate is warped downward, the substrate can be stably supported, and the substrate can be prevented from being inclined with respect to the heat treatment plate. Therefore, it is possible to prevent the heat treatment uniformity from deteriorating.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view showing an outline of the configuration of a coating and developing treatment system 1 provided with a temperature setting device for a heat treatment plate according to the present embodiment, and FIG. 2 is a front view of the coating and developing treatment system 1. FIG. 3 is a rear view of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating / development processing system 1 carries out, for example, 25 substantially disk-shaped wafers W in the cassette unit from the outside to the coating / development processing system 1 or carries the wafers W into the cassette C. A cassette station 2 for taking out, a processing station 3 in which a plurality of various processing apparatuses for performing predetermined processing in a single wafer type in a photolithography process are arranged in multiple stages, and a processing station 3 are provided adjacent to the processing station 3. And an interface unit 4 for transferring the wafer W to and from an exposure apparatus (not shown).

  The cassette station 2 is provided with a cassette mounting table 5 that can mount a plurality of cassettes C in a row in the X direction (vertical direction in FIG. 1). The cassette station 2 is provided with a wafer transfer body 7 that can move in the X direction on the transfer path 6. The wafer carrier 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Can be accessed.

  The wafer carrier 7 is rotatable in the θ direction around the Z axis, and can also access a temperature control device 60 and a transition device 61 belonging to a third processing device group G3 on the processing station 3 side described later.

  The processing station 3 adjacent to the cassette station 2 includes, for example, five processing device groups G1 to G5 in which a plurality of processing devices are arranged in multiple stages. On the negative side in the X direction (downward in FIG. 1) of the processing station 3, a first processing device group G1 and a second processing device group G2 are sequentially arranged from the cassette station 2 side. On the positive side in the X direction (upward in FIG. 1) of the processing station 3, the third processing device group G3, the fourth processing device group G4, and the fifth processing device group G5 are sequentially arranged from the cassette station 2 side. Has been placed. A first transfer device 10 is provided between the third processing device group G3 and the fourth processing device group G4. The first transfer device 10 can selectively access each processing device in the first processing device group G1, the third processing device group G3, and the fourth processing device group G4 to transfer the wafer W. A second transfer device 11 is provided between the fourth processing device group G4 and the fifth processing device group G5. The second transfer device 11 can selectively access each processing device in the second processing device group G2, the fourth processing device group G4, and the fifth processing device group G5 to transfer the wafer W.

  As shown in FIG. 2, the first processing apparatus group G1 includes a liquid processing apparatus that supplies a predetermined liquid to the wafer W and performs processing, for example, resist coating apparatuses 20, 21, and 22 that apply a resist solution to the wafer W. , Bottom coating devices 23 and 24 for forming an antireflection film for preventing reflection of light during the exposure process are stacked in five stages in order from the bottom. In the second processing unit group G2, liquid processing units, for example, development processing units 30 to 34 for supplying a developing solution to the wafer W and performing development processing are stacked in five stages in order from the bottom. In addition, chemical chambers 40 and 41 for supplying various processing liquids to the liquid processing apparatuses in the processing apparatus groups G1 and G2 are provided at the bottom of the first processing apparatus group G1 and the second processing apparatus group G2. Each is provided.

  For example, as shown in FIG. 3, the third processing unit group G3 includes a temperature control device 60, a transition device 61 for delivering the wafer W, and a high-accuracy temperature for adjusting the temperature of the wafer W under high-precision temperature control. The high-temperature heat treatment apparatuses 65 to 68 for heat-treating the preparation apparatuses 62 to 64 and the wafer W at a high temperature are sequentially stacked in nine stages from the bottom.

  In the fourth processing unit group G4, for example, a high-precision temperature control device 70, pre-baking devices 71 to 74 that heat-treat the wafer W after the resist coating process, and post-baking devices 75 to 75 that heat-process the wafer W after the development processing. 79 are stacked in 10 steps from the bottom.

  In the fifth processing unit group G5, a plurality of heat treatment apparatuses for heat-treating the wafer W, for example, high-precision temperature control apparatuses 80 to 83, a plurality of post-exposure baking apparatuses (hereinafter referred to as “PEB apparatuses”) for heat-treating the exposed wafer W 84 to 89 are stacked in 10 steps in order from the bottom.

  As shown in FIG. 1, a plurality of processing devices are arranged on the positive side in the X direction of the first transfer device 10, for example, an adhesion device 90 for hydrophobizing the wafer W as shown in FIG. 91, and heating devices 92 and 93 for heating the wafer W are stacked in four stages in order from the bottom. As shown in FIG. 1, a peripheral exposure device 94 that selectively exposes only the edge portion of the wafer W, for example, is disposed on the positive side in the X direction of the second transfer device 11.

  In the interface unit 4, for example, as shown in FIG. 1, a wafer transfer body 101 moving on a transfer path 100 extending in the X direction and a buffer cassette 102 are provided. The wafer carrier 101 is movable in the Z direction and is also rotatable in the θ direction, and accesses an exposure apparatus (not shown) adjacent to the interface unit 4, the buffer cassette 102, and the fifth processing unit group G5. The wafer W can be transferred.

  Next, the configuration of the PEB device 84 described above will be described. 4 and 5, the PEB apparatus 84 includes a heating unit 121 that heat-treats the wafer W and a cooling unit 122 that cools the wafer W in the housing 120.

  As shown in FIG. 4, the heating unit 121 includes a lid body 130 that is located on the upper side and is movable up and down, and a hot plate housing part 131 that is located on the lower side and forms the processing chamber S integrally with the lid body 130. have.

  The lid 130 has a substantially conical shape that gradually increases toward the center, and an exhaust part 130a is provided at the top. The atmosphere in the processing chamber S is uniformly exhausted from the exhaust part 130a.

  The hot plate accommodating portion 131 includes a cylindrical case 140. Inside the case 140, a hot plate 141 as a heat treatment plate for heating the wafer W and an annular holding for holding the outer peripheral portion of the hot plate 141 are provided. A member 142 and a substantially cylindrical support ring 143 that surrounds and holds the outer periphery of the holding member 142 are provided. On the upper surface of the support ring 143, for example, a blow-out port 144 for ejecting an inert gas is formed toward the inside of the processing chamber S. By blowing out the inert gas from the blow-out port 144, the inside of the process chamber S is formed. Can be purged.

  The hot plate 141 has a substantially disk shape with a thickness, and is supported at the center of the hot plate housing portion 131 with the upper surface thereof being substantially horizontal. Inside the heat plate 141, a heater 145 that generates heat by power feeding is incorporated.

  As shown in FIG. 6, a plurality of support members 146 that support the lower surface of the wafer W on the hot plate 141 when the wafer W is heat-treated are provided on the upper surface of the hot plate 141. Each support member 146 is disposed so as to surround the center of the upper surface of the heat plate 141 and is provided so as to protrude upward from the upper surface of the heat plate 141. For example, as shown in FIG. 6, four support members 146 are arranged at equal intervals on a circle centered on the center of the upper surface of the hot plate 141, and further eight on the outer concentric circles. The support members 146 are arranged at equal intervals. The wafer W is supported in a state where the upper end portion of the support member 146 is in contact with or close to the four locations surrounding the lower surface central portion C of the wafer W and the eight peripheral edge portions of the lower surface of the wafer W. Further, the lower surface of the wafer W is separated from the upper surface of the hot plate 141, and the central portion C of the wafer W is disposed directly above the central portion of the hot plate 141. As described above, the wafer W is supported on each support member 146, so that a gap is formed between the upper surface of the hot plate 141 and the lower surface of the wafer W. Bake is done.

  As shown in FIG. 7, the eight support members 146 that support the peripheral edge of the lower surface of the wafer W protrude higher upward than the four support members 146 provided on the inner side. In this way, as the wafer W is separated from the lower surface central part C of the wafer W so as to protrude higher from the upper surface of the hot plate 141, the wafer W rises from the central part toward the peripheral side. Even when the support member 146 is deformed downward, each support member 146 is in contact with or close to the lower surface of the wafer W, so that the wafer W is stably supported and the wafer W is inclined with respect to the hot plate 141. Can be prevented. The height of each support member 146 is determined in advance by checking the average warpage of the lower surface of the wafer W deformed by the heat treatment by the hot plate 141 in advance, and the upper end portion of each support member 146 at a position along this average warp shape. May be set to such a height as to be disposed.

  As shown in FIG. 4, below the hot plate 141, there are provided first raising / lowering pins 150 for supporting the lower surface of the wafer W and raising / lowering it when the wafer W is transferred onto the hot plate 141. The first elevating pin 150 can be moved up and down by an elevating drive mechanism 151. In addition, through holes 152 that penetrate the hot plate 141 in the thickness direction (vertical direction) are formed at three locations surrounding the central portion of the upper surface of the hot plate 141. Each first elevating pin 150 is raised from below the heat plate 141 by driving of the elevating drive mechanism 151 and inserted into the through hole 152, and can move up and down in the through hole 152. It can pass through and protrude above the hot plate 141 or exit below the hot plate 141.

  In the cooling unit 122 adjacent to the heating unit 121, for example, a cooling plate 170 for mounting and cooling the wafer W is provided. The cooling plate 170 has, for example, a substantially rectangular flat plate shape as shown in FIG. 5, and the end surface on the heating unit 121 side is curved in an arc shape. As shown in FIG. 4, a cooling member 170a such as a Peltier element is built in the cooling plate 170, and the cooling plate 170 can be adjusted to a predetermined set temperature.

  The cooling plate 170 is attached to a rail 171 extending toward the heating unit 121 side. The cooling plate 170 can be moved on the rail 171 by the driving unit 172. The cooling plate 170 can move to above the heating plate 141 on the heating unit 121 side.

  In the cooling plate 170, for example, two slits 173 along the X direction are formed as shown in FIG. The slit 173 is formed from the end surface of the cooling plate 170 on the heating unit 121 side to the vicinity of the central portion of the cooling plate 170. The slit 173 prevents interference between the cooling plate 170 moved to the heating chamber 121 side and the first lifting pins 150 protruding on the heating plate 141. As shown in FIG. 4, a second lifting pin 174 is provided below the slit 173 in the cooling unit 122. The second elevating pin 174 can be moved up and down by the elevating drive unit 175. The second elevating pin 174 can rise from below the cooling plate 170 and pass through the slit 173 to protrude above the cooling plate 170.

  As shown in FIG. 5, a loading / unloading port 180 for loading / unloading the wafer W is formed on both side surfaces of the casing 120 with the cooling plate 170 interposed therebetween.

  In the PEB apparatus 84 configured as described above, first, the wafer W held in a substantially horizontal posture is loaded into the cooling unit 122 through the loading / unloading port 180 and placed on the cooling plate 170. Then, with the lid 130 raised and the processing chamber S opened, the wafer W supported by the cooling plate 170 is transferred to the upper side of the hot plate accommodating portion 131 by the movement of the cooling plate 170. When the wafer W is transported above the hot plate 141, it is transferred to the upper ends of the three first elevating pins 150 that have been lifted and waited in advance. When the cooling plate 170 is withdrawn after the wafer W is delivered, the lid 130 is lowered and integrated with the hot plate accommodating portion 131, and the processing chamber S is closed. Then, the first raising / lowering pins 150 are lowered, and the wafer W is transferred to the support member 146 on the hot plate 141. The first raising / lowering pins 150 that have transferred the wafer W are accommodated in the through holes 152 of the hot plate 141. In this way, the wafer W is placed on the upper end of the support member 146 and supported while being lifted from the upper surface of the hot plate 141. Note that the temperature of the hot plate 141 is raised in advance, and heating of the wafer W is started when the wafer W comes close to the hot plate 141.

  By the way, the wafer W immediately after being carried into the PEB apparatus 84 has a substantially flat plate shape. However, when it is heated rapidly by the hot plate 141, a thermal stress is generated in the wafer W, as shown in FIG. The wafer W is slightly convexly curved downward. That is, a warp that rises with respect to the central portion C occurs toward the peripheral portion of the wafer W. Even when the wafer W is deformed in this way, the support member 146 comes into contact with three or more positions surrounding the central portion C of the wafer W on the lower surface, so that the wafer W is reliably supported. Further, since each support member 146 is higher on the outer side than on the inner side, the upper end portion of each support member 146 is in contact with or close to the lower surface of the wafer W that is convex downward. Thus, the wafer W is supported in a stable state. Therefore, it is possible to prevent the wafer W from being inclined with respect to the hot plate 141.

  In this way, the wafer W is supported on the hot plate 141, and heat treatment is performed for a predetermined time, for example, about 60 seconds to 90 seconds. When the heat treatment time elapses, the first raising / lowering pins 150 rise, and the wafer W is raised from the hot plate 141 by the first raising / lowering pins 150. Thereby, the heating of the wafer W is completed. Thereafter, after the lid 130 is raised and the processing chamber S is opened, the cooling plate 170 is moved to receive the wafer W from the first raising / lowering pins 150 and exit. As a result, the wafer W is unloaded from the heating unit 121 to the cooling unit 122. When the wafer W on the cooling plate 170 is cooled in the cooling unit 122, the wafer W is unloaded from the cooling unit 122 through the loading / unloading port 180. Thus, a series of heat treatment is completed.

  According to the above embodiment, when the wafer W is warped downward due to thermal stress, the plurality of support members 146 are arranged so as to come into contact with portions other than the central portion C of the wafer W. It is possible to prevent the wafer W from being inclined with respect to the hot plate 141. Furthermore, since these support members 146 are provided so that the position of the upper end becomes higher as the distance from the lower surface central portion C of the wafer W increases, the wafer W can be warped downward. Each support member 146 is not too far from the lower surface of the wafer W, and the wafer W can be stabilized and reliably supported. Therefore, it is possible to prevent the wafer W from being inclined with respect to the hot plate 141, thereby preventing the uniformity of heat treatment from deteriorating. In other words, it is possible to prevent the uniformity of the line width of the resist pattern formed through the heat treatment in the PEB apparatus 84 from being deteriorated in the wafer surface.

  In the above embodiment, the four support members 146 surrounding the central portion of the upper surface of the hot plate 141 are arranged, and the eight support members 146 are arranged outside thereof. The arrangement is not limited to this. For example, support members may be arranged on three concentric circles centered on the center of the upper surface of the hot plate 141, and the lower surface of the wafer W may be supported by the support members arranged on the three concentric circles. Further, in the above embodiment, each support member 146 is arranged to support a portion other than the lower surface central portion C of the wafer W. However, as shown in FIG. In addition, a support member that is lower than the other support members 146 and can contact or approach the lower surface central portion C of the wafer W may be provided. In this case as well, when the wafer W is warped downward, the other support member 146 comes into contact with the outer side of the lower surface central portion C of the wafer W, thereby preventing the wafer W from being inclined.

  Each support member 146 may be movable up and down according to the position of the lower surface of the wafer W. In the example shown in FIG. 9, a plurality of elevating mechanisms 190 such as motors that elevate and lower the support members 146 are provided below the heat plate 141. The hot plate 141 is formed with a plurality of through holes 191 that penetrate the hot plate 141 in the thickness direction. Each support member 146 is formed in a rod shape, and is passed through the through hole 191 so as to be vertically movable. The lower end portion of each support member 146 is supported by the elevating mechanism 190 below the heat plate 141, and the upper end portion can protrude from the upper surface of the heat plate 141. In such a configuration, the position of the upper end portion of each support member 146 is adjusted to the position of the lower surface of the wafer W by individually raising and lowering each support member 146 with respect to the heat plate 141 by driving each lifting mechanism 190. it can. Therefore, when the wafer W is warped, each support member 146 can be brought into contact with the lower surface of the wafer W to stabilize the wafer W. When the wafer W is transferred from the cooling plate 170 to the hot plate 141, first, the wafer W is received from the cooling plate 170 by the three first lifting pins 150 raised from the hot plate 141, and each first The lift pins 150 may be lowered to bring the wafer W close to the hot plate 141 so that the wafer W is delivered from the first lift pins 150 to the support member 146. During the heat treatment, the lower surface of the wafer W is supported by the support member 146. After the heat treatment, when the wafer W is transferred from the hot plate 141 to the cooling plate 170, the wafer W is supported by the three first lifting pins 150. The wafer W may be received from 146 and separated from the hot plate 141, and then the wafer W may be received from the first lift pins 150 by the cooling plate 170.

  Further, for example, as shown in FIG. 10, a contact sensor 195 is provided at the upper end of each support member 146, and the upper end of the support member 146 is in contact with the lower surface of the wafer W according to the detection value of each contact sensor 195. It may be possible to detect. Further, the detection value of each contact sensor 195 is transmitted to a control unit 196 that controls the driving of each lifting mechanism 190, and the control unit 196 drives each lifting mechanism 190 based on the detection value of each contact sensor 195. It is good also as a structure which controls.

  In order to raise and lower each support member 146, the average warpage of the lower surface of the wafer W deformed by the heat treatment by the hot plate 141 is examined in advance, and the upper end portion is positioned at a position along this average warpage shape. You may adjust it. Further, for example, when there is a possibility that the wafer W is warped before being loaded into the PEB apparatus 84, the average warpage of the lower surface of the wafer W before being loaded is checked in advance. The upper end may be positioned at a position along the line.

  Further, the warpage of each wafer W may be measured before the heat treatment in the PEB apparatus 84, and the height of the upper end portion may be changed one by one in accordance with the warpage of each wafer W. For example, as shown in FIG. 11, a warpage measuring apparatus 200 having a laser displacement meter or the like that measures the warpage of the wafer W is installed in the coating and developing treatment system 1. Then, the wafer W is carried into the warpage measuring apparatus 200 before being carried into the PEB apparatus 84, and the warpage of the wafer W is measured. The measurement result is transmitted from the warpage measuring apparatus 200 to the control unit 196 in FIG. Then, when the wafer W is carried into the PEB device 84 and brought close to the hot plate 141, each support member 146 is moved up and down based on the warp measured by the warp measuring device 200 under the control of the control unit 196. In this way, the upper end portion of the support member 146 is arranged according to the warp shape of each wafer W, and the wafer W can be supported more stably.

  Further, when the wafer W is supported on the hot plate 141, the warpage of the wafer W is measured by the amount of elevation of each support member 146 when the upper end is moved to a position where it contacts the lower surface of the wafer W. May be. For example, in FIG. 10, the warp of the wafer W may be calculated by the control unit 196 based on the drive amount of the lifting mechanism 190 when the contact sensor 195 of each support member 146 is moved to the position where the support sensor 146 contacts the wafer W. .

  The example of the embodiment of the present invention has been described above, but the present invention is not limited to this example and can take various forms. For example, although the said embodiment was an example regarding the heating part 121 of the PEB apparatus 84, this invention is applicable also to other heat processing apparatuses, such as a prebaking apparatus provided with a hot plate, and a post-baking apparatus. Further, the present invention can be applied to an apparatus for heat-treating other substrates other than a wafer, such as an FPD (flat panel display) and a mask reticle for a photomask.

  The present invention is useful for a heat treatment apparatus that heats a substrate with a hot plate.

It is a top view which shows the outline of a structure of a coating-development processing system. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a PEB apparatus. It is explanatory drawing of the cross section which shows the outline of a structure of a PEB apparatus. It is a top view of a hot platen. It is explanatory drawing of the longitudinal cross-section which shows the state which mounted the wafer on the supporting member. It is explanatory drawing of the longitudinal cross-section which shows embodiment which provided the supporting member also in the upper surface center part of the hot platen. It is explanatory drawing of the longitudinal cross-section which shows embodiment provided with the raising / lowering mechanism which raises / lowers a supporting member. It is explanatory drawing of the longitudinal cross-section which shows embodiment provided with the contact sensor in the upper end part of the supporting member. It is explanatory drawing of the longitudinal cross-section which shows embodiment which installed the measuring apparatus in the coating and developing processing system.

Explanation of symbols

W wafer 1 coating and developing treatment system 84 PEB apparatus 141 hot plate 146 support member 190 lifting mechanism 195 contact sensor

Claims (7)

An apparatus for supporting and heating a substrate on a heat treatment plate,
A plurality of support members for supporting the lower surface of the substrate on the upper surface of the heat treatment plate;
The heat treatment apparatus according to claim 1, wherein each of the support members is provided so as to protrude higher from the upper surface of the heat treatment plate as it is spaced outward from the central portion of the lower surface of the substrate. The heat treatment apparatus according to claim 1, further comprising an elevating mechanism that elevates and lowers each of the support members. An apparatus for heat-treating a substrate with a heat treatment plate,
A plurality of elevating pins that support and lower the substrate when the substrate is transferred onto the heat treatment plate;
A plurality of support members for supporting the lower surface of the substrate on the heat treatment plate when the substrate is heat-treated,
A heat treatment apparatus comprising an elevating mechanism for elevating and lowering each of the support members. The heat treatment apparatus according to claim 2, further comprising a sensor that detects that an upper end portion of the support member is in contact with a lower surface of the substrate. 5. The heat treatment apparatus according to claim 2, wherein the support members are moved up and down based on a warp of the substrate measured in advance. 6. The heating according to claim 2, 3, 4 or 5, wherein the warpage of the substrate is measured by the amount of elevation of each support member when the upper end portion of each support member contacts the lower surface of the substrate. Processing equipment. The heat treatment apparatus according to claim 1, wherein each of the support members supports a portion other than the central portion of the lower surface of the substrate.

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