JP2006164683A - Inline type plasma processing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device capable of solving a problem caused by the flexure of a board in carrying the board although the device is used for carrying the board as it is without using a fixture like a board holder, and allowing a plasma generation part to be formed long in the board carrying direction. <P>SOLUTION: This inline type plasma processing device is provided with: a board carrying means for supporting a nearly oblong board 7 from the lower side to carry the board 7 along a board passage; and the plasma generation part disposed adjacently to at least either of upper and lower parts of the board passage. The board carrying means has a space area 12 without contributing to the carriage of the board 7. The space area 12 is extended obliquely linearly with respect to the board-carrying direction of the board passage when viewed from the upper side. The plasma generation part is arranged along the space area 12 so as to apply plasma treatment to the board 7 in the space area 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an in-line type plasma processing apparatus for carrying out a surface treatment on a substrate by transporting the substrate as it is without being placed on a holder or the like and passing through the inside of the apparatus.

  In recent years, plasma is generated under a pressure of about 1 atm, that is, near atmospheric pressure, and plasma treatments such as thin film formation on various substrates, substrate processing, substrate surface treatment, etc. are carried out using chemical reaction by this plasma. An atmospheric pressure plasma processing apparatus has been proposed. If plasma treatment can be performed under a pressure near atmospheric pressure, it is not necessary to evacuate the reaction vessel to a high vacuum. As a result, an expensive evacuation apparatus is not required, and the apparatus cost can be greatly reduced. Furthermore, if the plasma processing can be realized while the substrate is transported as it is without being placed on a holder or the like, a step of placing the substrate on the holder or a step of taking the substrate out of the holder It becomes unnecessary. Further, it is not necessary to secure a space for performing these steps. Therefore, an in-line type atmospheric pressure plasma processing apparatus can be arranged and used in the middle of the substrate transfer path, and processing can be performed with a small space and a high tact time.

Japanese Unexamined Patent Publication No. 2001-102197 (Patent Document 1) discloses a plasma processing apparatus for carrying out plasma processing by transporting a substrate as it is without placing the substrate on a holder or the like. For example, FIG. 1 of Patent Document 1 discloses a configuration in which an alternating electric field is formed between electrodes even under atmospheric pressure by arranging electrodes facing each other in a chamber to perform glow discharge. In this configuration, the plasma generating gas is supplied into the chamber from the gas supply port provided above, and glow discharge occurs in the space where the electrodes face each other. Plasma is generated from the plasma generating gas by this glow discharge. On the other hand, since the surplus plasma generating gas is discharged from the gas exhaust port provided below, a downward flow of plasma generating gas flows from the gas supply port side to the gas exhaust port side in the chamber. . Since the generated plasma flows downstream along the flow of the plasma generating gas, the plasma reaches the surface of the substrate being conveyed by the roller, and the surface of the substrate can be continuously subjected to plasma treatment.
JP 2001-102197 A

  In the apparatus shown in FIG. 1 of Patent Document 1, a roller for transporting a substrate is disposed in the vicinity of a space where the electrodes face each other, that is, in a position avoiding a section where a plasma generating gas flows. Although its purpose and effect are not clearly described, it is understood that if the roller is in the middle of the plasma generating gas flow, the roller is exposed to the plasma and deteriorates.

  However, in such an apparatus configuration, the roller is disposed only at a position that does not face the series of electrode pairs, so that a section without a roller (hereinafter referred to as “no-roller section”) is formed to some extent. When the substrate is transported and approaches the non-roller section, the end portion on the front side in the transport direction of the substrate bends downward due to its own weight. If the non-roller section becomes longer, the amount of deflection at the front end of the substrate increases. If the amount of deflection becomes larger than a certain level, the substrate cannot smoothly ride on the upper side of the next roller after passing through the non-roller section. In particular, when the amount of deflection is large, the end of the substrate may collide with the next roller, which may cause damage to both the substrate and the roller.

  There is also a problem that processing unevenness occurs on the substrate surface. This is because in the apparatus of Patent Document 1, the state of plasma processing largely depends on the distance between the substrate surface and the electrode. In order to efficiently reach the substrate surface without deactivating the reactive species, the distance between the substrate surface and the electrode should be set to be as short as 10 mm or less. Even a deflection amount of about mm greatly affects the processing conditions. Therefore, if the distance between the substrate surface and the electrode varies due to the presence of the non-roller section, uneven processing occurs.

  In addition to the remote plasma method in which the plasma generation region and the plasma processing region are different as in the apparatus of FIG. 1 of Patent Document 1, not only the remote plasma method but also a so-called direct plasma method in which plasma processing is performed through an object to be processed in the plasma generation region Even so, the problem of the deflection of the object to be processed also occurs. Particularly in the plasma processing apparatus near atmospheric pressure, the plasma processing is performed by narrowing the distance between the electrodes. Therefore, when the deflection amount of the substrate increases due to the non-roller section, the substrate comes into contact with the lower electrode of the electrode pair. The problem of doing becomes obvious.

  Further, if a thin substrate of about 1 mm or less is transported alone, the amount of deflection increases, so the above-described problem becomes significant.

  For such problems caused by the deflection of the substrate, for example, it is also conceivable to use a substrate holder that is transported with the substrate while assisting the mechanical strength of the substrate. However, if the substrate holder is used, the handling becomes complicated, and the thickness of the passing space is required to be larger. Therefore, the method of transporting the substrate as it is is preferable.

  Therefore, the present invention eliminates the problems caused by the deflection of the substrate during substrate transportation while using the substrate holder as it is without using a substrate holder or the like. Another object of the present invention is to provide an apparatus that can be configured to be long.

  In order to achieve the above object, an inline-type plasma processing apparatus according to the present invention supports a substantially rectangular substrate from below, and transports the substrate along the substrate path. The substrate transport means has a gap region that does not contribute to the transport of the substrate, and the gap region is viewed from above. The plasma generating portion is arranged along the gap region so as to perform plasma processing on the substrate in the gap region. By adopting this configuration, the unsupported part of the substrate is limited to a part of the side on the front side in the transport direction, so that the deflection of the substrate due to its own weight can be suppressed, and as a result, the electrode and the substrate contact each other. Can be prevented.

  Preferably, in the above invention, the gap region is arranged in a polygonal line when viewed from above. By adopting this configuration, it is possible to shorten the length necessary for the arrangement of the plasma generation unit in the substrate transport direction, and to shorten the substrate transport line.

  Preferably, in the above invention, the gap region is separated into a plurality of line segments, and the plurality of line segments are portions of the width of the substrate to be subjected to plasma processing when viewed from the entrance side of the substrate passage. It is arranged to completely cover. By adopting this configuration, it is possible to shorten the length necessary for the arrangement of the plasma generation unit in the substrate transport direction, and to shorten the substrate transport line.

  Preferably, in the above invention, the plasma generation unit includes a pair of electrodes opposed to each other with the substrate passage sandwiched from above and below, and the pair of electrodes is connected to the substrate by passing the substrate therebetween. The length of the pair of electrodes along the traveling direction of the substrate passage is constant over the entire width of the substrate passage. By adopting this configuration, it is possible to uniformly perform plasma treatment on the entire surface of the substrate by transporting the substrate at a constant speed.

  In the present invention, preferably, the substrate transport means includes a contact transport unit that contacts the substrate and advances the substrate by a frictional force, and a levitation that floats and supports the substrate by ejecting gas from below the substrate. The floating part is arranged so as to sandwich the gap region from before and after the traveling direction of the substrate, and the contact conveying part further sandwiches the floating part from before and after the traveling direction of the substrate. Is arranged. By adopting this configuration, plasma processing can be performed while the substrate is levitated before and after the gap region, so that the amount of deflection of the substrate can be reduced.

  Preferably, in the above invention, the gas ejected from the floating part is a gas used for the plasma treatment. By adopting this configuration, it is possible to effectively maintain the atmosphere necessary for plasma processing.

  In the present invention, preferably, the contact conveyance unit includes a rotating body for moving the substrate by contacting the substrate. By adopting this configuration, the substrate can be reliably promoted while suppressing the deflection of the substrate.

  According to the present invention, the unsupported portion of the substrate is limited to a part of the side on the front side in the transport direction, so that the deflection of the substrate due to its own weight can be suppressed, and as a result, the electrode and the substrate are in contact with each other. Can be prevented.

(Embodiment 1)
(Constitution)
With reference to FIGS. 1-4, the in-line type plasma processing apparatus in Embodiment 1 based on this invention is demonstrated. This in-line type plasma processing apparatus includes a reaction vessel 3 as shown in a sectional view in FIG. The reaction vessel 3 has an inlet 15 and an outlet 16 which are slit-like openings on the side surfaces, and a substantially rectangular substrate 7 which is an object to be processed enters the reaction vessel 3 from the inlet 15, and the inside of the reaction vessel 3. The outlet 16 exits through the substrate passage 10 formed in the substrate.

  In the description of the present invention, the term “rectangular” of “substantially rectangular” used for expressing the shape of the substrate is a concept including all right-angled quadrilaterals. Therefore, the rectangle concept includes squares. In the case of “substantially rectangular”, for example, a shape with rounded corners, a shape with chamfered corners, and a shape in which a part of a right-angled quadrilateral is deformed or cut out are substantially as a whole. It is included as long as it can be equated with a right quadrilateral.

  This inline-type plasma processing apparatus supports the substrate 7 from below and transports the substrate 7 as a substrate transport means for transporting the substrate 7 along the substrate path 10, and the upper and lower sides of the substrate path 10. And a plasma generation unit 11 disposed close to at least one of them. The substrate transfer means has a gap region 12 that does not contribute to transfer of the substrate 7. The plasma generation unit 11 includes electrodes 2 a and 2 b and a gas supply port 13. The electrodes 2a and 2b are connected to the high frequency power source 1. The gas supply port 13 is connected to the gas cylinder 4 by a gas pipe 14. A gas flow meter 5 is disposed in the middle of the gas pipe 14. The transfer roller 6 can be rotated by a driving means (not shown) to advance the substrate 7 in the direction of the arrow 91.

  As shown in FIG. 2, the gap region 12 extends linearly obliquely with respect to the traveling direction of the substrate passage 10 when viewed from above. FIG. 2 is a diagram showing a planar positional relationship between the transfer roller 6, the substrate 7, the gap region 12, and the electrode 2b. FIG. 3 is a diagram showing a positional relationship when viewed from the sides of the electrodes 2a and 2b, the transfer roller 6 and the substrate 7. As shown in FIG. As shown in FIG. 2, the plasma generation unit 11 is arranged along the gap region 12 so as to perform plasma processing on the substrate 7 in the gap region 12. In FIG. 2, the electrode 2b which is a part of the plasma generation part 11 is visible. The width of the electrode 2b along the transport direction of the substrate 7 (hereinafter referred to as “transport direction length”) is W. The conveying roller 6 includes a shaft 6a and wheels 6b. The wheels 6b are arranged on the respective shafts 6a at appropriate intervals, and the substrate 7 is supported by a large number of wheels 6b as shown by circles P in FIG.

(Operation)
The operation of this inline plasma processing apparatus will be described below. First, an appropriate amount of a rare gas for easily maintaining stable plasma discharge and a reactive gas for performing a desired plasma treatment are obtained by a gas flow meter 5 connected to a gas cylinder 4 as a gas supply source. , Mixed in an appropriate ratio, and introduced into the reaction vessel 3 from the gas supply port 13 through the gas pipe 14. Specifically, He or Ar is used as the rare gas. In particular, He having a long life in a metastable state is preferable. Further, the rare gas may be Ne, Kr, or Xe in addition to He and Ar. Moreover, if stable discharge and maintenance are possible with only the reactive gas, the rare gas may not be mixed. The kind of the reaction gas may be appropriately changed depending on the target material to be processed. For example, if an organic substance is to be removed, oxygen may be used as a reaction gas in order to oxidize and incinerate the organic substance. If Si or Si oxide is to be etched, CF ₄ , SF ₆ or other gas containing halogen may be selected. Of course, oxygen, water, and other gases may be added to them, and an appropriate gas may be selected as appropriate. Hereinafter, a mixture of the rare gas and the reactive gas is referred to as a “plasma processing gas”.

  While the plasma processing gas is introduced into the reaction vessel 3, a high frequency electric field is formed in the gap formed by the electrodes 2 a and 2 b by the high frequency power source 1. By doing so, a strip-shaped plasma is generated in this gap. In this state, the substrate 7 is transported along the substrate path 10. The substrate 7 passes through the gap formed by the electrodes 2a and 2b, and the surface of the substrate 7 is subjected to a desired plasma treatment.

  In this in-line type plasma processing apparatus, since the plasma is generated at a pressure near atmospheric pressure, the surfaces of the electrodes 2a and 2b should be covered with a dielectric to suppress the transition to arc discharge. Is desirable. Preferred dielectrics include alumina and alumina nitride. Coating with these dielectrics can be performed by, for example, a thermal spraying method.

  If necessary, an impedance matching unit may be provided in the middle of the wiring connecting the high frequency power source 1 and the electrodes 2a and 2b in order to efficiently introduce a high frequency to the electrodes 2a and 2b. The frequency of the high-frequency power source 1 is not particularly limited, but for example, a frequency of 1 kHz to 100 MHz can be used relatively suitably. Further, the output waveform of the power source is not limited to a continuous sine wave, and may be a pulsed or rectangular waveform.

  If external air mixing into the gap between the electrodes 2a and 2b becomes a problem, a rare gas is air showered in the vicinity of the inlet 15 and the outlet 16 which are open ports on the side surface of the reaction vessel 3 so as to block external air mixing. You may provide the mechanism ejected in a shape. Alternatively, a gas exhaust port for sucking outside air that has entered the reaction vessel 3 may be provided in the vicinity of the open port.

(Comparative example)
In order to compare with the inline type plasma processing apparatus in this embodiment, an inline type plasma processing apparatus configured without applying the present invention is shown in FIGS. 5 and 6 as a comparative example. FIG. 5 is a plan view of the main part, and FIG. 6 is a side view. The gap region 12h is formed in a straight line substantially perpendicular to the transport direction of the substrate 7. The lower electrode 2h is also arranged along this. The length of the electrode 2h in the transport direction is W as in the apparatus shown in FIGS. Here, a particular problem is that the wheel 6b cannot support the substrate 7 in the gap region 12h, and the amount of deflection of the substrate 7 increases. Since the front side of the substrate 7 starts to pass through the gap region 12h at the same time over the entire length and finishes passing at the same time, after the front side passes through the first transfer roller 61, the adjacent second transfer roller is adjacent. Until reaching 62, the portion including the front side of the substrate 7 is in a cantilever state supported only by the first transfer roller 61. Therefore, the amount of deflection of the substrate 7 is particularly large.

(Action / Effect)
Actions and effects of the inline-type plasma processing apparatus in this embodiment will be described (see FIGS. 1 to 4).

  According to this in-line type plasma processing apparatus, as is apparent from the arrangement of the substrate support points indicated by a large number of circles P shown in FIG. 4, the section that is not supported by the wheel 6b exceeds the length W in the transport direction of the electrode 2b. What continues is limited to a part of the front side of the substrate 7 in the transport direction, not the entire length, for example, the section L shown in FIG. Of the side on the front side of the substrate 7 in the conveyance direction, the portion other than the section L has already reached the next conveyance roller 6 with a length smaller than W and can support the substrate 7. For this reason, the distance from the supported point of the area | region which is not supported among the board | substrates 7 becomes short, and a cross-sectional secondary moment becomes small. Therefore, the deflection of the substrate 7 due to its own weight can be suppressed. In the present invention, since the amount of deflection of the substrate 7 can be reduced in this way, even if an electrode having a longer length in the transport direction is arranged, the risk of contact between the electrode and the substrate 7 can be reduced.

  In other words, in the inline-type plasma processing apparatus, when a gap region is provided in the member for supporting the substrate and the electrode pair of the plasma generation unit is disposed in the gap, the length of the gap region in the transport direction is increased. Deflection of the substrate can be suppressed.

(Embodiment 2)
(Constitution)
With reference to FIG. 7, the in-line type plasma processing apparatus in Embodiment 2 based on this invention is demonstrated. In the first embodiment, an example is shown in which the gap region that does not contribute to the transport of the substrate is like a single straight line. The shape of the gap region is not limited to one that looks like a single straight line. In the present embodiment, as shown in FIG. 7, the gap regions are arranged in a polygonal line when viewed from above. In this example, the electrode 2i is arranged in a polygonal gap region. The structure of other parts is the same as that described in the first embodiment.

(Action / Effect)
Also in the present embodiment, it is possible to suppress the deflection of the substrate while extending the length of the gap region in the transport direction by the same actions and effects as in the first embodiment.

  Furthermore, in the present embodiment, since the gap region has a polygonal line shape, the length necessary for the arrangement of the plasma generation unit in the transport direction of the substrate 7 can be shortened. Therefore, it is possible to shorten the substrate transfer line. Note that the gap region is not limited to a straight line, and may have a shape including a curve.

  As another configuration example, a plurality of short linear gap regions may be arranged as shown in FIG. In the example shown in FIG. 8, the electrode 2j is arranged in a plurality of gap regions. The gap region is separated into a plurality of line segments, and these plurality of line segments completely cover a portion of the width of the substrate 7 to be subjected to plasma processing when viewed from the entrance 15 side of the substrate passage 10. Has been placed. With this configuration, the substrate transfer line can be shortened while each electrode 2j has a relatively simple shape. In addition to arranging a plurality of short straight lines, a plurality of short broken lines may be arranged in the gap region.

  When the electrodes are arranged in a polygonal line or divided into a plurality of pieces as in the examples shown in FIGS. 7 and 8, the plasma in the portion corresponding to the bent portion of the electrode or the joint between the electrodes is used. Processing tends to be uneven. Therefore, it is desirable to use in applications where uniformity in plasma processing is not strictly required. Specific applications include surface modification treatment. In the case of surface modification treatment, the restriction on excessive treatment is relaxed, and it is often only necessary to perform plasma treatment above a certain level. Therefore, if conditions are set so that sufficient plasma treatment can be performed, the plasma can be used without paying special attention to the non-uniformity of the bent portion and the portion corresponding to the seam.

  In any of the first and second embodiments, the plasma generating unit includes a pair of electrodes facing each other with the substrate passage 10 from above and below, and the substrate 7 passes between the pair of electrodes. Thus, a desired plasma treatment is performed on the substrate 7, and the length of the pair of electrodes along the traveling direction of the substrate passage 10, that is, the length in the transport direction is constant over the entire width of the substrate passage 10. It is preferable. This is because if the length of the electrodes in the transport direction is a constant value over the entire width of the substrate passage 10, the substrate 7 can be transported at a constant speed so that the plasma treatment can be performed uniformly on the entire surface of the substrate 7.

(Embodiment 3)
(Constitution)
In the first and second embodiments, the direct plasma processing type inline plasma processing apparatus has been described. However, even in the case of the remote plasma processing type inline plasma processing apparatus, a substrate support portion is provided on the downstream side of the gas. The present invention is preferably used when the gap is set instead.

  With reference to FIG. 9, the in-line type plasma processing apparatus in Embodiment 3 based on this invention is demonstrated. FIG. 9 shows an example in which the present invention is applied to an in-line plasma processing apparatus of a remote plasma processing system. Electrodes 2ka and 2kb are arranged above the substrate passage 10. The plasma generating unit 11k includes electrodes 2ka and 2kb and a gas supply port 13. The electrode 2ka is arranged so as to be sandwiched between two electrodes 2kb. The electrodes 2ka and 2kb are connected to the high frequency power source 1. This in-line type plasma processing apparatus is configured to transfer active species based on plasma generated in the gap between the electrodes 2ka and 2kb to the surface of the flat substrate 7 by gas flow.

  In the in-line type plasma processing apparatus according to the present embodiment, for the purpose of forming a gas flow and diffusing active species, a gas discharge port is provided downstream, that is, below the plasma generation unit 11k with the substrate passage 10 therebetween. 17 is arranged. The gas discharge port 17 is connected to the exhaust pump 8. The exhaust pump 8 also has a mechanism that contributes to the formation of a gas flow. In order to form such a gas flow path, a sufficient gap region 12k is provided between the conveyance rollers 63 and 64 adjacent to each other immediately below the plasma generation unit 11k.

  The gap region 12k is arranged linearly obliquely with respect to the transport direction of the substrate 7 when viewed from above as in the example shown in FIG. The structure of other parts is the same as that described in the first embodiment.

(Action / Effect)
Also in the present embodiment, it is possible to suppress the deflection of the substrate while extending the length of the gap region in the transport direction by the same actions and effects as in the first and second embodiments.

  Furthermore, in general, in the remote plasma system, the problem is that plasma processing unevenness is likely to occur due to a change in the distance from the plasma generation region to the surface of the substrate 7 due to the deflection of the substrate 7, but in this embodiment, the substrate 7 Therefore, the plasma processing unevenness can be reduced.

  In this embodiment as well, the shape of the gap region may be various shapes as described in the second embodiment.

(Embodiment 4)
(Constitution)
With reference to FIGS. 10-12, the in-line type plasma processing apparatus in Embodiment 4 based on this invention is demonstrated. This inline-type plasma processing apparatus is similar to that described in the first and second embodiments, but includes a floating portion 9 provided with a gas ejection function as shown in FIG. The substrate transfer means includes a contact transfer unit that contacts the substrate 7 and advances the substrate 7 by frictional force, and a floating portion 9 that blows gas from below the substrate 7 to support the substrate 7 by floating. The floating portion 9 is disposed so as to sandwich the gap region 12n from the front and rear of the substrate 7 in the traveling direction. The contact conveyance unit includes a conveyance roller 6 that is a rotating body for moving the substrate 7 by contacting the substrate 7. The plurality of transfer rollers 6 are arranged so that the floating portion 9 is further sandwiched from before and after the traveling direction of the substrate 7. FIG. 11 shows an enlarged cross-sectional view in the vicinity of the floating part 9. As shown in FIG. 11, a gas flow path 18 is formed inside the floating part 9, and a number of gas outlets 19 are provided on the upper surface. FIG. 12 shows the vicinity of the gap region 12n as viewed from above. The structure of other parts is the same as that described in the first embodiment.

(Action / Effect)
In the present embodiment, as shown by an arrow 92 in FIG. 11, gas is introduced from the gas supply source (not shown) to the floating portion 9. Further, this gas is ejected upward as indicated by an arrow 93 from the gas ejection port 19 on the upper surface of the floating portion 9. The gas ejected from the gas ejection port 19 floats and holds the substrate 7. Here, as the gas to be ejected, it is desirable to use the plasma processing gas already exemplified in the first embodiment. By doing so, the plasma processing gas can be effectively supplied to the gap region 12n.

  In addition, as in the present embodiment, the plasma processing gas is supplied from above the substrate passage 10 from the gas cylinder 4 via the gas flowmeter 5 and the substrate passage is provided so that the substrate 7 floats against gravity. If the gas for plasma processing is also ejected and supplied from the floating portion 9 below 10, both the upper and lower sides of the substrate 7 are transported and passed between the electrodes 2 a and 2 b both upward and downward. Therefore, the atmosphere of the plasma processing gas can be effectively maintained regardless of the position of the substrate 7.

  Since the floating portion 9 has only a function of floating and holding the substrate 7 and does not have a function of propelling to the side and transporting it, in the present embodiment, it is used in combination with a transporting roller 6 as a contact transporting portion. Yes. Although the transfer roller 6 has a function of transferring the substrate to the side by frictional force while holding the substrate 7, the amount of deflection of the substrate 7 increases because the substrate holding points are located apart from each other. On the other hand, as described above, although the floating portion 9 does not have a substrate carrying capability, the substrate 7 can be held uniformly over the entire upper surface of the floating portion 9 by arranging the plurality of gas ejection ports 19 at a narrow interval. The amount of deflection can be reduced.

  In the present embodiment, the substrate is held by the floating portion 9 in the vicinity of the plasma generation portion where the deflection amount of the substrate 7 should be more strictly suppressed, and a region where the deflection amount is not a problem is particularly determined by the general-purpose transfer roller 6. The substrate 7 is transferred. A gap region 12n sandwiched between the floating portions 9 coincides with a region where the electrode 2b is visible in FIG. In the example shown in FIG. 12, the gap region 12n is a single oblique straight line, but a plurality of broken or short straight gap regions are arranged by applying the concepts of the first and second embodiments. It may be done.

  In addition, the said embodiment disclosed this time is an illustration in all the points, Comprising: It is not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and includes all modifications within the scope and meaning equivalent to the terms of the claims.

It is sectional drawing of the in-line type plasma processing apparatus in Embodiment 1 based on this invention. It is a top view which shows the gap area vicinity of the in-line type plasma processing apparatus in Embodiment 1 based on this invention. It is a side view which shows the electrode vicinity of the in-line type plasma processing apparatus in Embodiment 1 based on this invention. It is explanatory drawing of the mode of the support of the board | substrate in the in-line type plasma processing apparatus in Embodiment 1 based on this invention. FIG. 3 is a plan view showing the vicinity of a gap region of the inline-type plasma processing apparatus shown as a comparative example in the first embodiment. 3 is a side view showing the vicinity of an electrode of the inline-type plasma processing apparatus shown as a comparative example in Embodiment 1. FIG. It is a top view which shows the gap area vicinity of the 1st example of the in-line type plasma processing apparatus in Embodiment 2 based on this invention. It is a top view which shows the gap area vicinity of the 2nd example of the in-line type plasma processing apparatus in Embodiment 2 based on this invention. It is sectional drawing of the in-line type plasma processing apparatus in Embodiment 3 based on this invention. It is sectional drawing of the in-line type plasma processing apparatus in Embodiment 4 based on this invention. It is an expanded sectional view of the floating part vicinity of the in-line type plasma processing apparatus in Embodiment 4 based on this invention. It is a top view which shows the gap | interval area | region vicinity of the in-line type plasma processing apparatus in Embodiment 4 based on this invention.

Explanation of symbols

  1 High frequency power supply, 2a, 2b, 2h, 2i, 2j, 2k electrode, 3 reaction vessel, 4 gas cylinder, 5 gas flow meter, 6 transport roller, 6a shaft, 6b wheel, 7 substrate, 8 exhaust pump, 9 floating part DESCRIPTION OF SYMBOLS 10 Substrate channel | path, 11 Plasma production | generation part, 12, 12h, 12k, 12n Gap area | region, 13 Gas supply port, 14 Gas piping, 15 Inlet, 16 Outlet, 17 Gas exhaust port, 18 Gas flow path, 19 Gas jet port, 61 1st transfer roller, 62 2nd transfer roller, 63, 64 transfer roller, 91, 92, 93 arrow, P circle, L section.

Claims (7)

A substrate transfer means for supporting a substantially rectangular substrate from below and transferring the substrate along a substrate path;
A plasma generation unit disposed close to at least one of the upper and lower sides with respect to the substrate passage,
The substrate transport means has a gap region that does not contribute to transport of the substrate,
The gap region extends linearly obliquely with respect to the traveling direction of the substrate passage when viewed from above,
The in-line type plasma processing apparatus, wherein the plasma generation unit is disposed along the gap region so as to perform plasma processing on the substrate in the gap region.   The in-line plasma processing apparatus according to claim 1, wherein the gap region is arranged in a polygonal line when viewed from above.   The gap region is separated into a plurality of line segments, and the plurality of line segments completely cover a portion of the width of the substrate to be subjected to plasma processing when viewed from the entrance side of the substrate passage. The in-line type plasma processing apparatus according to claim 1, which is arranged. The plasma generation unit includes a pair of electrodes facing each other across the substrate passage from above and below,
The pair of electrodes perform a desired plasma treatment on the substrate by passing the substrate therebetween,
The in-line type plasma processing apparatus according to any one of claims 1 to 3, wherein a length of the pair of electrodes along the traveling direction of the substrate passage is constant over the entire width of the substrate passage. The substrate transport means includes a contact transport unit that contacts the substrate and advances the substrate by a frictional force, and a floating portion that blows and supports the substrate by ejecting gas from below the substrate,
The floating portion is disposed so as to sandwich the gap region from before and after the traveling direction of the substrate, and the contact conveyance unit is disposed so as to sandwich the floating portion further from the front and rear of the traveling direction of the substrate. An in-line type plasma processing apparatus according to any one of claims 1 to 4.   The in-line type plasma processing apparatus according to claim 5, wherein the gas ejected from the floating part is a gas used for the plasma processing.   The in-line type plasma processing apparatus according to claim 5, wherein the contact conveyance unit includes a rotating body for moving the substrate by contacting the substrate.

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