JP2006128679A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which deterioration caused by the permeation of moisture or oxygen can be suppressed, e.g. a light emitting device having an organic light emitting element formed on a plastic substrate or a liquid crystal display employing a plastic substrate. <P>SOLUTION: A strip layer 12 including an element (a TFT, a light emitting element containing an organic compound, an element having liquid crystal, a memory element, a thin film diode, a photoelectric conversion element composed of the PIN junction of silicon, a silicon resistive element or the like) formed on a glass substrate or a quartz substrate is stripped from the substrate and then transferred to a plastic substrate 10 having high thermal conductivity. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

    The present invention relates to a semiconductor device having a circuit constituted by an element typified by a thin film transistor (hereinafter referred to as TFT) in which a peeled layer to be peeled is attached to a substrate and transferred, and a manufacturing method thereof. For example, the present invention relates to an electro-optical device typified by a liquid crystal module, a light-emitting device typified by an EL module, and an electronic apparatus in which such a device is mounted as a component. The present invention also relates to an element peeling method and an element transfer method onto a plastic substrate.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a light-emitting device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

  Various applications using such an image display device are expected, but the use for portable devices is attracting attention. Currently, many glass substrates and quartz substrates are used, but they have the disadvantage of being easily broken and heavy. Further, in mass production, it is difficult to increase the size of a glass substrate or a quartz substrate, which is not suitable. Therefore, attempts have been made to form TFT elements on a flexible substrate, typically a flexible plastic film.

  However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, TFTs having better electrical characteristics cannot be formed when formed on a glass substrate. Therefore, a high-performance light-emitting element or liquid crystal display device using a plastic film has not been realized.

  If a light emitting device in which an organic light emitting device (OLED) is formed on a flexible substrate such as a plastic film or a liquid crystal display device can be manufactured, the thickness is thin and light. In addition, it can be used for a display having a curved surface, a show window, and the like. Therefore, the application is not limited to portable devices, and the application range is very wide.

  However, a substrate made of plastic is generally easy to transmit moisture and oxygen, and deterioration of the organic light emitting layer is promoted by these materials. Therefore, the lifetime of the light emitting device is particularly likely to be shortened. Therefore, conventionally, an insulating film such as silicon nitride or silicon nitride oxide is provided between the plastic substrate and the organic light emitting element to prevent moisture and oxygen from being mixed into the organic light emitting layer.

  In addition, a substrate such as a plastic film is generally vulnerable to heat, and if the film formation temperature of an insulating film such as silicon nitride or silicon nitride oxide is too high, the substrate is likely to be deformed. On the other hand, if the film formation temperature is too low, the film quality is deteriorated and it is difficult to sufficiently prevent the permeation of moisture and oxygen. Another problem is that when a device provided on a substrate such as a plastic film is driven, heat is locally generated and a part of the substrate is deformed or deteriorated.

In view of the above problems, the present invention provides a semiconductor device capable of suppressing deterioration due to permeation of moisture and oxygen, for example, a light emitting device having an organic light emitting element formed on a plastic substrate, and a liquid crystal display device using the plastic substrate. Offering is an issue.

  The present invention relates to an element formed on a glass substrate or a quartz substrate (TFT, a light emitting element containing an organic compound, an element having a liquid crystal, a memory element, a thin film diode, a photoelectric conversion element composed of a silicon PIN junction, , Silicon resistance element, etc.) are peeled off from the substrate, and then transferred to a plastic substrate having high thermal conductivity. The present invention extends the life of an element by dissipating heat generated from the element with a plastic substrate having high thermal conductivity.

A plastic substrate with high thermal conductivity is made of a highly thermally conductive resin, which is a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide. Mixed with metal powders such as copper, iron and aluminum, metal fibers, low melting point metals (lead-free solder: tin, bismuth, zinc), ceramics such as boron nitride, aluminum nitride, magnesium oxide and beryllium oxide Is a synthetic resin having a high thermal conductivity of 2 to 30 W / mK.

In addition, when ceramic and lead-free solder are mixed in a synthetic resin, the solder melts by the heat during injection molding, and when it cools and hardens, the dispersed ceramic particles are connected like a network, which has the effect of transferring heat. Further increase.

A substrate is formed by blending a predetermined amount with the high thermal conductive resin, kneading and granulating, and shaping the obtained pellets into a flat plate by an injection molding method. Moreover, not only a flat plate but a base material of various shapes can also be formed.

A plastic substrate with high thermal conductivity can have the same thermal conductivity as a metal (titanium, aluminum alloy, or magnesium alloy), and since it is a plastic substrate, it is cheaper and lighter than a metal substrate. Is.

  In the case where a plastic substrate having high thermal conductivity is low in translucency, it is necessary to use a translucent substrate on the display side when applied to a light emitting device or a liquid crystal display device (reflection type). For this reason, a plastic substrate with high thermal conductivity is used on the other side. In particular, it is desirable to provide a plastic substrate having high thermal conductivity on the side close to the element that generates heat.

The configuration of the invention disclosed in this specification includes a plastic substrate or a plastic base material having thermal conductivity as a support, and includes an adhesive in contact with the plastic substrate, and an element on an insulating film in contact with the adhesive. This is a semiconductor device.

  In the above structure, the element is a thin film transistor, a light emitting element having a layer containing an organic compound, an element having a liquid crystal, a memory element, a thin film diode, a photoelectric conversion element composed of a silicon PIN junction, or a silicon resistance element. It is said.

In each of the above structures, the adhesive material has thermal conductivity. The adhesive for adhering the plastic substrate having high thermal conductivity is preferably a material having high thermal conductivity, and the thickness is preferably thin. For example, an adhesive (insulating thermally conductive adhesive) containing a filler or powder made of silver, nickel, aluminum, aluminum nitride, or the like is used.

In each of the above structures, the plastic substrate or plastic base material having thermal conductivity has a higher thermal conductivity than the adhesive. The plastic substrate or plastic substrate having thermal conductivity is made of a low melting point metal and ceramics in a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide. It is a mixed one.

  Further, the peeling method or the transfer method is not particularly limited, and a separation layer is provided between the layer to be peeled and the substrate, and the separation layer is removed with a chemical solution (etchant) to separate the layer to be peeled from the substrate. A separation layer made of amorphous silicon (or polysilicon) is provided between the layer to be peeled and the substrate, and hydrogen contained in the amorphous silicon is released by irradiating the substrate with a laser beam. A method of separating the layer to be peeled from the substrate by generating voids can be used. Note that in the case of peeling using laser light, it is preferable to form an element included in the layer to be peeled at a heat treatment temperature of 410 ° C. or lower so that hydrogen is not released before peeling.

  As another peeling method, a peeling method (stress peel-off method) in which peeling is performed using film stress between two layers may be used. In this peeling method, a metal layer provided on a substrate, preferably a metal nitride layer is provided, an oxide layer is provided in contact with the metal nitride layer, an element is formed on the oxide layer, and a film formation process or 500 Even if heat treatment at a temperature of 0 ° C. or higher is performed, film separation (peeling) does not occur, and it can be easily separated by physical means in the oxide layer or at the interface. Further, in order to promote peeling, a heat treatment or a laser beam irradiation treatment may be performed before peeling by the physical means.

  The present invention also provides a manufacturing method using a novel peeling method and a transfer method.

Configuration 1 of the invention relating to the manufacturing method disclosed in this specification includes: a first step of forming a layer to be peeled including a semiconductor element on a first substrate; and applying an organic resin film soluble in a solvent to the layer to be peeled And a second step of bonding a second substrate to the organic resin film with a first double-sided tape, and sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate. A step, a fourth step of bonding a third substrate to the first substrate with a second double-sided tape, the first substrate to which the third substrate is bonded, and the layer to be peeled off. A fifth step of separating by a special means, and a sixth substrate that is bonded to the layer to be peeled by a first adhesive, and the layer to be peeled is sandwiched between the second substrate and the fourth substrate. A seventh step of separating the layer to be peeled and the first double-sided tape from the second substrate, and the layer to be peeled An eighth step of separating the first double-sided tape, a method for manufacturing a semiconductor device characterized by having: a ninth step of removing the organic resin film in a solvent.

By forming an organic resin film that is soluble in a solvent, the surface of the first electrode (anode or cathode of the light-emitting element) is protected and planarized. By planarization, adhesion can be improved when the substrate and the layer to be peeled are bonded to each other. When a flat organic resin film is formed and then bonded to the substrate, since it is covered with the organic resin film, unevenness due to wiring or the like is not reflected when adhering to the layer to be peeled, and adhesion is improved. Further, when the substrate is bonded to the other side of the layer to be peeled, unevenness due to wiring or the like is not reflected and adhesion is improved.

In addition, the second aspect of the invention relating to the manufacturing method includes a first step of forming a layer to be peeled including a semiconductor element on a first substrate, and a second step of applying an organic resin film soluble in a solvent to the layer to be peeled. When,
A second step of adhering a second substrate to the organic resin film with a first double-sided tape, and sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate; A fourth step of bonding a third substrate to the first substrate with a double-sided tape, a first substrate to which the third substrate is bonded, and a layer to be peeled are separated by physical means. A sixth step of bonding a fourth substrate to the layer to be peeled with a first adhesive and sandwiching the layer to be peeled between the second substrate and the fourth substrate; and A seventh step of separating the layer and the first double-sided tape from the second substrate, an eighth step of separating the layer to be peeled off and the first double-sided tape, and removing the organic resin film with a solvent And a ninth step of bonding a fifth substrate to the layer to be peeled with a second adhesive, and attaching the layer to be peeled to the fourth substrate and the A tenth step of sandwiching between 5 substrate, a method for manufacturing a semiconductor device characterized by having a.

According to another configuration 3 of the invention relating to the manufacturing method, a first step of forming a layer to be peeled including a TFT on a first substrate, and a second step of applying an organic resin film soluble in a solvent to the layer to be peeled are provided. Process,
A second step of adhering a second substrate to the organic resin film with a first double-sided tape, and sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate; A fourth step of bonding a third substrate to the first substrate with a double-sided tape, a first substrate to which the third substrate is bonded, and a layer to be peeled are separated by physical means. A sixth step of bonding a fourth substrate to the layer to be peeled with a first adhesive and sandwiching the layer to be peeled between the second substrate and the fourth substrate; and A seventh step of separating the layer and the first double-sided tape from the second substrate, an eighth step of separating the layer to be peeled off and the first double-sided tape, and removing the organic resin film with a solvent A ninth step of forming, a tenth step of forming a light emitting element containing an organic compound on the layer to be peeled, and sealing the light emitting element. A method for manufacturing a semiconductor device, comprising: an eleventh step of bonding a fifth substrate with a second adhesive and sandwiching the layer to be peeled between the fourth substrate and the fifth substrate. It is.

  In the configuration related to each of the above production methods, the solvent is water or alcohols.

  Further, in the configuration relating to each of the above manufacturing methods, the adhesion between the peeled layer and the fourth substrate is higher than the adhesion between the first double-sided tape and the second substrate in the seventh step. It is characterized by.

Further, the substrate to which the layer to be peeled is transferred is preferably a substrate having a rigidity higher than that of the substrate to be transferred. In the configurations 2 and 3 related to the manufacturing method, the first substrate is a glass substrate, The second substrate and the third substrate are quartz substrates or metal substrates, and the fourth substrate and the fifth substrate are plastic substrates.

  Further, in configurations 2 and 3 related to the manufacturing method, a plastic substrate having thermal conductivity may be attached to give a heat dissipation effect, and the first substrate is a glass substrate, and the second substrate In addition, the third substrate is a quartz substrate or a metal substrate, one of the fourth substrate and the fifth substrate is a light-transmitting plastic substrate, and the other is thermally conductive. It is characterized by being a plastic substrate.

Further, in the configuration related to each manufacturing method, the fourth substrate or the fifth substrate is a plastic having a SiN _x film, a SiN _x O _y film, an AlN _x film, or an AlN _x O _y film formed on a surface thereof. It is characterized by being a substrate. By forming a SiN _x film, a SiN _x O _y film, an AlN _x film, or an AlN _x O _y film on a plastic substrate, it is possible to provide a barrier property and improve the reliability of the semiconductor device.

  Further, either the step of adhering the second substrate with the double-sided tape or the step of adhering the third substrate with the double-sided tape may be performed first. In the configuration relating to each manufacturing method, the second substrate is attached to the organic resin film. Is bonded with a first double-sided tape, the third step of sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate, and the third substrate with the second double-sided tape There is no problem even if the order of the fourth step of bonding to the first substrate is reversed.

  Note that in this specification, all layers provided between a cathode and an anode are collectively referred to as an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are all included in the EL layer.

  In this specification, an EL element refers to an EL material and a layer containing an organic material or an inorganic material for injecting carriers into the EL material (hereinafter referred to as an EL layer) between two electrodes (an anode and a cathode). A light-emitting element having a structure, and a diode composed of an anode, a cathode and an EL layer.

  According to the present invention, heat generation from an element is radiated by a plastic substrate having high thermal conductivity, so that the lifetime of the element, that is, the reliability of the semiconductor device can be improved.

In addition, since the plastic substrate having high thermal conductivity is a plastic substrate, it can be made cheaper, more flexible, and lighter than a metal substrate.

  Embodiments of the present invention will be described below.

(Embodiment 1)
Here, an example in which an insulating base material or substrate having high thermal conductivity is attached to a layer to be peeled (including an element) peeled by a peeling method is shown.

  In FIG. 1A, 10 is an insulating base material having thermal conductivity, 11 is an adhesive, and 12 is a layer to be peeled (a layer including an element). The layer to be peeled 12 is a layer including a semiconductor element formed in advance on a substrate (not shown), and is peeled off from the substrate by a peeling method and attached to the base material 10 with the adhesive 11.

  Polyphenylene sulfide is used as a thermoplastic resin, and a predetermined amount of powders of Al, Mg, ceramics, and low melting point metal (lead-free solder) are mixed and kneaded and granulated, and the resulting pellets are injection-molded. The substrate 10 having a curved surface may be formed by a method or a pressure forming method. The low melting point metal is melted by the heat at the time of injection molding, and when cooled and solidified, the metal in the form of fibers is connected like a network between the dispersed ceramic particles to form a heat conduction path. The base material 10 thus obtained has a high thermal conductivity of 5 to 30 W / mK. In addition, as a manufacturing apparatus for melt-kneading the resin composition, a general kneading apparatus for resin, rubber, or ceramics may be used. By using a kneading apparatus, resin and low melting point metal powder having extremely different specific gravity are dispersed. The kneaded body melted and kneaded by the kneading apparatus is taken out as a lump. This lump composition is melted again to perform a granulation step for producing a granular composition called pellets. A pellet is formed into an arbitrary shape by an injection molding method.

  Elements provided on the layer to be peeled 12 (TFTs, light emitting elements including organic compounds, elements having liquid crystals, memory elements, thin film diodes, photoelectric conversion elements made of silicon PIN junctions, silicon resistance elements, etc. ), The heat generated from the element can be quickly diffused by the substrate 10 when the semiconductor device is completed and driven. Furthermore, by reducing the thickness of the adhesive 11, the heat dissipation effect can be further enhanced.

  FIG. 1B shows an example in which an insulating substrate having thermal conductivity formed into a flat plate shape is used. Note that portions other than the substrate 20 are the same as those in FIG. In FIG. 1B, 20 is an insulating substrate having thermal conductivity, 11 is an adhesive, and 12 is a layer to be peeled (a layer including an element). The layer to be peeled 12 is a layer including a semiconductor element formed in advance on a substrate (not shown), and is peeled off from the substrate by a peeling method and attached to the substrate 10 with an adhesive 11. Note that FIG. 1B shows a cross-sectional view of the substrate 20 in a curved state in order to show flexibility.

FIG. 1C shows an example in which a layer to be peeled is sandwiched between a pair of substrates 20 and 24. In order to protect the peeled layer 22 from impurity diffusion from the outside and physical force from the outside, the substrate 24 is attached and sealed with the second adhesive 23. The substrate 24 is a flexible plastic substrate or a thin glass substrate having a curved surface. In order to improve the barrier property, the substrate 24 has a SiN _x film, a SiN _x O _y film, an AlN _x film, or an AlN _x O _y film on the surface. A single layer or a stacked layer thereof may be formed. Furthermore, in order to improve the barrier property, a single layer of SiN _x film, SiN _x O _y film, AlN _x film, or AlN _x O _y film or a laminate thereof may be formed on the surface of the substrate 20.

  In FIG. 1 (C), 20 is an insulating base material having thermal conductivity, 21 is a first adhesive material, 22 is a layer to be peeled (a layer including an element), 23 is a second adhesive material, and 24 is a substrate. is there. The layer to be peeled 22 is a layer including a semiconductor element formed in advance on a substrate (not shown), peeled off from the substrate by a peeling method, and attached to the substrate 20 with the first adhesive material 21 or After the substrate 24 is bonded with the second adhesive 23, the substrate 24 is peeled off and then bonded to the substrate 20 with the first adhesive 21.

  FIG. 1D shows an example in which a material having thermal conductivity is used as the adhesive 31 and a layer to be peeled is sandwiched between a pair of substrates 30 and 34.

In FIG. 1D, 30 is an insulating substrate having thermal conductivity, 31 is an adhesive having high thermal conductivity, 32 is a layer to be peeled (a layer including an element), 33 is an adhesive, and 34 is a substrate.

As the adhesive 31 having high thermal conductivity, an adhesive (insulating thermally conductive adhesive) containing a filler or powder made of silver, nickel, aluminum, aluminum nitride, or the like may be used. By using the adhesive 31 having high thermal conductivity, the heat dissipation effect can be further enhanced.

(Embodiment 2)
Here, an example of manufacturing an active matrix light-emitting device will be described with reference to FIGS.

  Note that the present invention is not limited to an active matrix light-emitting device as long as it is a light-emitting device having a layer containing an organic compound, and is a passive matrix light-emitting device serving as a color display panel, a surface light source, or an illumination device. It can be applied to an area color light emitting device.

First, an element is formed over a glass substrate (first substrate 300). A metal film 301, here a tungsten film (thickness 10 nm to 200 nm, preferably 50 nm to 75 nm) is formed over a glass substrate by sputtering, and the oxide film 302, here a silicon oxide film (here, without exposure to the atmosphere) A film thickness of 150 nm to 200 nm is stacked. Note that since the sputtering method forms a film on the end surface of the substrate, it is preferable to selectively remove the tungsten film and the silicon oxide film formed on the end surface of the substrate by O ₂ ashing or the like. When peeling in a later process, separation occurs in the interface between the tungsten film and the silicon oxide film or in the silicon oxide film.

Next, a silicon oxynitride film (film thickness: 100 nm) serving as a base insulating film is formed by a PCVD method, and an amorphous silicon film (film thickness: 54 nm) is stacked without being exposed to the air.

  The amorphous silicon film contains hydrogen. When a polysilicon film is formed by heating, if a heat treatment at 500 ° C. or higher is performed for crystallization, hydrogen can be diffused simultaneously with the formation of the polysilicon film. Using the obtained polysilicon film, various elements typified by TFTs (thin film diodes, photoelectric conversion elements consisting of PIN junctions of silicon, silicon resistance elements, and sensor elements (typically pressure sensitive type using polysilicon) The present invention can also be applied to an element using a TFT having an amorphous silicon film as an active layer.

  Here, after forming a polysilicon film using a known technique (solid phase growth method, laser crystallization method, crystallization method using a catalytic metal, etc.), patterning is performed to form an island-shaped semiconductor region. Then, a top gate type TFT 303 having the active layer as an active layer is manufactured. As appropriate, formation of a gate insulating film, formation of a gate electrode, formation of a source region or a drain region by doping into an active layer, formation of an interlayer insulating film, formation of a source electrode or drain electrode, activation treatment, and the like are performed.

Next, a film containing an organic compound (hereinafter referred to as an “organic compound layer”) is provided between a pair of electrodes (anode and cathode), and an electric field is applied between the pair of electrodes, whereby a light emitting element capable of obtaining fluorescence or phosphorescence. Forming a first electrode for forming First, the first electrode 304 that serves as an anode or a cathode is formed. Here, a metal film having a high work function (Cr, Pt, W, or the like) or a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO) is used as the first electrode 304. In this example, zinc oxide (ZnO) or the like is used to function as an anode.

Note that when the source electrode or the drain electrode of the TFT is used as the first electrode as it is, or when the first electrode is separately formed in contact with the source region or the drain region, the TFT includes the first electrode.

Next, partition walls (called banks, barriers, banks, or the like) 305a are formed at both ends of the first electrode (anode) so as to surround the periphery of the first electrode. In order to improve the coverage, a curved surface having a curvature is formed at the upper end or the lower end of the partition wall. For example, when positive photosensitive acrylic is used as the partition wall material, it is preferable that only the upper end portion of the partition wall has a curved surface having a curvature radius (0.2 μm to 3 μm). As the partition 305a, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.

Moreover, when laminating | stacking several organic resin, there exists a possibility that it may melt | dissolve partially at the time of application | coating or baking with the solvent currently used between organic resins, or adhesiveness may become high too much. Therefore, when an organic resin is used as a material for the partition, the partition 305a is formed of an inorganic insulating film (SiN _x film, SiN _x O _y film, AlN _x film) so that it can be easily removed after applying a water-soluble resin in a later step. Or an AlN _x O _y film). This inorganic insulating film functions as a part 305b of the partition wall. (Fig. 3 (A))

  Next, an adhesive material soluble in water or alcohols is applied to the entire surface and baked. The composition of the adhesive may be any one such as epoxy, acrylate, or silicone. Here, a film (thickness 30 μm) 306 made of a water-soluble resin (manufactured by Toagosei Co., Ltd .: VL-WSHL10) is applied by spin coating, exposure is performed for 2 minutes for temporary curing, and then UV light is applied from the back surface 2 Exposure is performed for 5 minutes, 10 minutes from the surface, and a total of 12.5 minutes for the main curing. (Fig. 3 (B))

  Next, in order to facilitate subsequent peeling, treatment for partially reducing the adhesion between the metal film 301 and the oxide film 302 is performed. The treatment for partially reducing the adhesion is performed by partially irradiating the metal film 301 or the oxide film 302 with laser light along the periphery of the region to be peeled, or on the periphery of the region to be peeled. In this process, a pressure is locally applied from the outside along the surface to damage a part of the oxide film 302 or a part of the interface. Specifically, a hard needle may be pressed vertically with a diamond pen or the like to move under a load. Preferably, a scriber device is used, the pushing amount is 0.1 mm to 2 mm, and the pressure is applied. In this way, it is important to create a part where peeling phenomenon is likely to occur before peeling, that is, a trigger, and by performing a pretreatment that selectively (partially) decreases adhesion, peeling is performed. Defects are eliminated and the yield is improved.

  Next, the second substrate 308 is attached to the film 306 made of a water-soluble resin by using a double-sided tape 307. Further, the third substrate 310 is attached to the first substrate 300 using the double-sided tape 309. (FIG. 3C) The third substrate 310 prevents the first substrate 300 from being damaged in a subsequent peeling step. As the second substrate 308 and the third substrate 310, it is preferable to use a substrate having higher rigidity than the first substrate 300, such as a quartz substrate or a semiconductor substrate.

  Next, the first substrate 300 provided with the metal film 301 is peeled off by physical means from the region side where the adhesion is partially reduced. It can be peeled off with a relatively small force (for example, a human hand, wind pressure of a gas blown from a nozzle, ultrasonic waves, etc.). Thus, the layer to be peeled formed over the oxide layer 302 can be separated from the first substrate 300. The state after peeling is shown in FIG.

  Next, the fourth substrate 312 and the oxide layer 302 (and the layer to be peeled) are bonded to each other with the adhesive 311. (FIG. 3E) The adhesive 311 is more adhesive between the oxide layer 302 (and the layer to be peeled) and the fourth substrate than the adhesion between the second substrate 308 and the layer to be peeled by the double-sided tape 307. It is important that it is higher.

  As the fourth substrate 312, a plastic substrate having a high thermal conductivity of 2 to 30 W / mK is used. Plastic in which ceramics and lead-free solder are mixed in a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide, and the ceramic particles are connected like a network It is preferable to use a substrate.

Examples of the adhesive 311 include various curable adhesives such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic adhesive. More preferably, the adhesive 311 is also provided with high thermal conductivity by including powder or filler made of silver, nickel, aluminum, and aluminum nitride.

  Next, the second substrate 308 is separated from the double-sided tape 307. (Fig. 3 (F))

  Next, the double-sided tape 307 is peeled off. (Fig. 3 (G))

Next, the water-soluble resin 306 is dissolved and removed using water. (FIG. 3 (H)) If the water-soluble resin remains, it causes a defect. Therefore, it is preferable to make the surface of the first electrode 304 a clean surface by cleaning treatment or O ₂ plasma treatment.

  Next, if necessary, a surface active agent (weak alkali) is included in a porous sponge (typically made of PVA (polyvinyl alcohol) or nylon), and the surface of the first electrode 304 is rubbed and washed.

  Next, immediately before the formation of the layer 313 containing an organic compound, vacuum heating is performed to remove adsorbed moisture on the entire substrate provided with the TFT and the partition. Furthermore, ultraviolet irradiation may be performed on the first electrode immediately before forming the layer containing an organic compound.

  Next, a layer 313 containing an organic compound is selectively formed over the first electrode (anode) by an evaporation method using an evaporation mask or an inkjet method. The layer 313 containing an organic compound may be a high molecular material, a low molecular material, an inorganic material, a layer in which these are mixed, a layer in which these are dispersed, or a stack in which these layers are appropriately combined.

Further, a second electrode (cathode) 314 is formed on the layer containing an organic compound. (FIG. 3 (I)) As the cathode 314, a thin film (film that transmits light) of a material having a low work function (Al, Ag, Li, Ca, or an alloy thereof MgAg, MgIn, AlLi, CaF ₂ , or CaN) (Thickness) and a transparent conductive film may be used. Further, if necessary, a protective layer is formed by sputtering or vapor deposition so as to cover the second electrode. As a protective layer, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by sputtering or CVD, and carbon as a main component A thin film (for example, a DLC film or a CN film) can be used.

Next, a sealant (not shown) including a gap material that holds a pair of substrate gaps is drawn in a desired pattern on the fifth substrate 314 serving as a sealing material. Since the light-emitting element emits light through the fifth substrate 314, the fifth substrate 314 may be a light-transmitting substrate. Here, in order to reduce the weight, a plastic substrate having a barrier film (SiN _x film, SiN _x O _y film, AlN _x film, or AlN _x O _y film) formed on the surface is used. Next, the sealing substrate on which the seal is drawn and the active matrix substrate are bonded together, and sealing is performed so that the sealing pattern provided on the sealing substrate is positioned to surround the light emitting region provided on the active matrix substrate. Further, the space surrounded by the sealing material is sealed so as to be filled with an adhesive 314 made of a transparent organic resin. (Fig. 3 (J))

  Through the above steps, a light-emitting device including a TFT and a light-emitting element can be manufactured using the plastic substrate 312 having high thermal conductivity and the fifth substrate 314 as a support. In the light-emitting device thus obtained, the plastic substrate has high thermal conductivity, so that the heat generated by the element during driving can be dissipated, and since the support is a plastic substrate, it is thin, lightweight, and flexible. Can be.

Note that although a method of peeling near the interface between the tungsten film and the silicon oxide film is used here, the method is not particularly limited. For example, after the amorphous silicon film containing hydrogen is formed on the first substrate, laser light irradiation is performed. A method of separating the first substrate may be used, or a method of etching or mechanically cutting the first substrate using a solution or a gas may be used.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1.

(Embodiment 3)
Here, FIG. 4 illustrates an example of manufacturing a light-emitting device in which light emitted from a light-emitting element is transmitted through a first electrode and light is extracted. In addition, since it is the same as Embodiment 2 to the middle, detailed description is abbreviate | omitted and the same code | symbol is used for the same part.

  First, the steps up to the step of peeling the first substrate are the same as those in the second embodiment. Note that a transparent conductive film is used as the first electrode 304 in order to transmit light emission.

  After obtaining the state shown in FIG. 4D according to Embodiment Mode 2, a transparent plastic substrate 412 is attached with an adhesive 411. (Fig. 4 (E))

  Next, the second substrate 308 is separated from the double-sided tape 307. (Fig. 4 (F))

  Next, the double-sided tape 307 is peeled off. (Fig. 4 (G))

Next, the water-soluble resin 306 is dissolved and removed using water. (FIG. 4 (H)) If the water-soluble resin remains, it causes a defect. Therefore, it is preferable that the surface of the first electrode 304 is cleaned by a cleaning process or an O ₂ plasma process.

  Next, if necessary, a surface active agent (weak alkali) is included in a porous sponge (typically made of PVA (polyvinyl alcohol) or nylon), and the surface of the first electrode 304 is rubbed and washed.

  Next, immediately before the formation of the layer 413 containing an organic compound, vacuum heating is performed to remove adsorbed moisture on the entire substrate provided with TFTs and partition walls. Furthermore, ultraviolet irradiation may be performed on the first electrode immediately before forming the layer containing an organic compound.

  Next, a layer 413 containing an organic compound is selectively formed over the first electrode (anode) by an evaporation method using an evaporation mask or an inkjet method. The layer 413 containing an organic compound may be a high molecular material, a low molecular material, an inorganic material, a layer in which these are mixed, a layer in which these are dispersed, or a stack in which these layers are combined as appropriate.

Further, a second electrode (cathode) 414 is formed on the layer containing an organic compound. (FIG. 4I) As the cathode 414, a material having a low work function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. Further, if necessary, a protective layer is formed by sputtering or vapor deposition so as to cover the second electrode. As a protective layer, a silicon nitride film, a silicon oxide film, a silicon oxynitride film (SiNO film (composition ratio N> O) or SiON film (composition ratio N <O)) obtained by sputtering or CVD, and carbon as a main component A thin film (for example, a DLC film or a CN film) can be used.

  Next, a sealant (not shown) including a gap material that holds a pair of substrates is drawn on a fifth substrate 416 having high thermal conductivity in a desired pattern. Since the light-emitting element emits light through the third substrate 412, the fifth substrate 416 may be an opaque or translucent substrate. Next, the fifth substrate 416 on which the seal is drawn is bonded to the active matrix substrate, and the seal pattern provided on the fifth substrate 416 is sealed so as to surround the light emitting region provided on the active matrix substrate. Stop. Further, the space surrounded by the sealing material is sealed so as to be filled with an adhesive 415 made of an organic resin. (Fig. 4 (J))

  Through the above process, a light-emitting device including a TFT and a light-emitting element can be manufactured using the plastic substrate 416 having high thermal conductivity and the fourth substrate 412 as a support. In the light-emitting device thus obtained, the plastic substrate has high thermal conductivity, so that the heat generated by the element during driving can be dissipated, and since the support is a plastic substrate, it is thin, lightweight, and flexible. Can be.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

  The present invention having the above-described configuration will be described in more detail with the following examples.

Here, a method for manufacturing a TFT (n-channel TFT or p-channel TFT) over a substrate will be described in detail. Although an example of manufacturing an active matrix substrate provided with up to TFTs is shown here, the present invention is not particularly limited. If the arrangement of the TFTs and the material of the pixel electrodes are appropriately changed and a light emitting element is further formed, the organic matrix substrate is formed. It goes without saying that a light-emitting device having a light-emitting layer containing a compound can also be manufactured.

A glass substrate (# 1737) was used as the substrate. First, a silicon oxynitride layer was formed to a thickness of 100 nm on the substrate by PCVD.

  Next, a tungsten layer was formed as a metal layer with a thickness of 50 nm by a sputtering method, and a silicon oxide layer was formed as an oxide layer with a thickness of 200 nm by a sputtering method continuously without being released to the atmosphere. The silicon oxide layer was formed by using an RF sputtering apparatus, using a silicon oxide target (diameter 30.5 cm), flowing argon gas heated to heat the substrate at a flow rate of 30 sccm, a substrate temperature of 300 ° C., The film forming pressure was 0.4 Pa, the film forming power was 3 kW, and the argon flow rate / oxygen flow rate was 10 sccm / 30 sccm.

  Next, the tungsten layer is removed from the peripheral edge or the end surface of the substrate by O 2 ashing.

Next, a silicon oxynitride film produced from a plasma CVD method using a film formation temperature of 300 ° C. and source gases SiH ₄ and N ₂ O (composition ratio Si = 32%, O = 59%, N = 7%, H = 2%) A semiconductor layer (here, an amorphous silicon layer having an amorphous structure with a film-forming temperature of 300 ° C. and a film-forming gas of SiH ₄ continuously by a plasma CVD method without being released to the atmosphere. ) With a thickness of 54 nm. This amorphous silicon layer contains hydrogen, and can be peeled off in the oxide layer or at the interface by physical means by diffusing hydrogen by a subsequent heat treatment.

  Next, a nickel acetate salt solution containing 10 ppm of nickel by weight is applied by a spinner. Instead of coating, a method of spreading nickel element over the entire surface by sputtering may be used. Next, heat treatment is performed for crystallization, so that a semiconductor film having a crystal structure (here, a polysilicon layer) is formed. Here, after heat treatment for dehydrogenation (500 ° C., 1 hour), heat treatment for crystallization (550 ° C., 4 hours) is performed to obtain a silicon film having a crystal structure. The heat treatment for dehydrogenation (500 ° C., 1 hour) also serves as heat treatment for diffusing hydrogen contained in the amorphous silicon layer to the interface between the W film and the silicon oxide layer. Although a crystallization technique using nickel as a metal element for promoting crystallization of silicon is used here, other known crystallization techniques such as a solid phase growth method and a laser crystallization method may be used.

Next, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, irradiation with laser light (XeCl: wavelength 308 nm) for increasing the crystallization rate and repairing defects left in the crystal grains In the air or in an oxygen atmosphere. As the laser light, excimer laser light having a wavelength of 400 nm or less, and second harmonic and third harmonic of a YAG laser are used. Here, a pulsed laser beam having a repetition frequency of about 10 to 1000 Hz is used, and the laser beam is condensed to 100 to 500 mJ / cm ² by an optical system, and irradiated with an overlap rate of 90 to 95%. May be scanned. Here, laser light irradiation was performed in the air at a repetition frequency of 30 Hz and an energy density of 470 mJ / cm ² . Note that since the reaction is performed in the air or in an oxygen atmosphere, an oxide film is formed on the surface by laser light irradiation. Although an example using a pulsed laser is shown here, a continuous wave laser may be used, and in order to obtain a crystal with a large grain size when crystallizing an amorphous semiconductor film, continuous wave is possible. It is preferable to use a solid-state laser and apply the second to fourth harmonics of the fundamental wave. Typically, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) may be applied. In the case of using a continuous wave laser, laser light emitted from a continuous wave YVO ₄ laser having an output of 10 W is converted into a harmonic by a non-linear optical element. There is also a method of emitting harmonics by putting a YVO ₄ crystal and a nonlinear optical element in a resonator. Then, it is preferably formed into a rectangular or elliptical laser beam on the irradiation surface by an optical system, and irradiated to the object to be processed. At this time, the energy density of approximately 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation may be performed by moving the semiconductor film relative to the laser light at a speed of about 10 to 2000 cm / s.

Next, in addition to the oxide film formed by the laser light irradiation, the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm. In this embodiment, ozone water is used to form the barrier layer. However, the surface of the semiconductor film having a crystal structure is oxidized by a method of oxidizing the surface of the semiconductor film having a crystal structure by irradiation with ultraviolet rays in an oxygen atmosphere or the surface of the semiconductor film having a crystal structure by oxygen plasma treatment. The barrier layer may be formed by depositing an oxide film of about 1 to 10 nm by an oxidation method, a plasma CVD method, a sputtering method, an evaporation method, or the like. Further, the oxide film formed by laser light irradiation may be removed before forming the barrier layer.

Next, an amorphous silicon film containing an argon element serving as a gettering site is formed with a thickness of 10 nm to 400 nm, here 100 nm, over the barrier layer by a sputtering method. In this embodiment, the amorphous silicon film containing an argon element is formed in an atmosphere containing argon using a silicon target. In the case where an amorphous silicon film containing an argon element is formed using a plasma CVD method, the film formation conditions are a monosilane / argon flow rate ratio (SiH ₄ : Ar) of 1:99 and a film formation pressure of 6.665 Pa. (0.05 Torr), RF power density is 0.087 W / cm ^2, and film forming temperature is 350 ° C.

After that, heat treatment is performed for 3 minutes in a furnace heated to 650 ° C., and gettering is performed to reduce the nickel concentration in the semiconductor film having a crystal structure. A lamp annealing apparatus may be used instead of the furnace.

Next, the amorphous silicon film containing an argon element as a gettering site is selectively removed using the barrier layer as an etching stopper, and then the barrier layer is selectively removed with dilute hydrofluoric acid. Note that during gettering, nickel tends to move to a region with a high oxygen concentration, and thus it is desirable to remove the barrier layer made of an oxide film after gettering.

  Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also called a polysilicon film), a mask made of resist is formed and etched into a desired shape to form islands. A separated semiconductor layer is formed. After the semiconductor layer is formed, the resist mask is removed.

  Through the above steps, a nitride layer (or metal layer), an oxide layer, and a base insulating film are formed over the first substrate to obtain a semiconductor film having a crystal structure, and then etched into a desired shape. A semiconductor layer separated into a shape can be formed. A TFT having the semiconductor layer thus obtained as an active layer is manufactured.

  Next, the oxide film is removed with an etchant containing hydrofluoric acid, and at the same time, the surface of the silicon film is washed, and then an insulating film containing silicon as a main component and serving as a gate insulating film is formed. In this embodiment, a silicon oxynitride film (composition ratio: Si = 32%, O = 59%, N = 7%, H = 2%) is formed to a thickness of 115 nm by plasma CVD.

  Next, a first conductive film with a thickness of 20 to 100 nm and a second conductive film with a thickness of 100 to 400 nm are stacked over the gate insulating film. In this embodiment, a tantalum nitride film with a thickness of 50 nm and a tungsten film with a thickness of 370 nm are sequentially stacked on the gate insulating film.

The conductive material for forming the first conductive film and the second conductive film is an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the element as a main component. Form. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used as the first conductive film and the second conductive film. Further, the present invention is not limited to the two-layer structure. For example, a three-layer structure in which a 50 nm-thickness tungsten film, a 500 nm-thickness aluminum and silicon alloy (Al-Si) film, and a 30 nm-thickness titanium nitride film are sequentially stacked. Also good. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film. Moreover, a single layer structure may be sufficient.

Next, a resist mask is formed by a light exposure process, and a first etching process is performed to form a gate electrode and a wiring. The first etching process is performed under the first and second etching conditions. For etching, an ICP (Inductively Coupled Plasma) etching method may be used. Using the ICP etching method, the film is formed into a desired taper shape by appropriately adjusting the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the substrate-side electrode, the electrode temperature on the substrate side, etc.) Can be etched. As an etching _{gas, Cl 2, BCl 3, SiCl} 4, CCl 4 chlorine gas or CF ₄ to the typified like, SF _6, fluorine-based gas NF ₃ and the like typified, or O ₂ as appropriate Can be used.

  In the first etching process, the shape of the mask made of resist is made suitable, and the end portions of the first conductive layer and the second conductive layer are tapered due to the effect of the bias voltage applied to the substrate side. It becomes. The angle of the tapered portion may be 15 to 45 °.

  In this manner, a first shape conductive layer (first conductive layer and second conductive layer) including the first conductive layer and the second conductive layer is formed by the first etching process. The insulating film to be the gate insulating film is etched by about 10 to 20 nm and becomes a gate insulating film in which the region not covered with the first shape conductive layer is thinned.

  Next, a second etching process is performed without removing the resist mask.

  By this second etching process, the taper angle of W became 70 °. A second conductive layer is formed by this second etching process. On the other hand, the first conductive layer is hardly etched. Actually, the width of the first conductive layer may be about 0.3 μm, that is, the entire line width may be receded by about 0.6 μm as compared with that before the second etching process, but the size is hardly changed.

Next, after removing the resist mask, a first doping process is performed. The doping process may be performed by ion doping or ion implantation. The conditions of the ion doping method are a dose amount of 1.5 × 10 ¹⁴ atoms / cm ² and an acceleration voltage of 60 to 100 keV. Typically, phosphorus (P) or arsenic (As) is used as the impurity element imparting n-type conductivity. In this case, the first conductive layer and the second conductive layer serve as a mask for the impurity element imparting n-type conductivity, and the first impurity region is formed in a self-aligning manner. An impurity element imparting n-type conductivity is added to the first impurity region in a concentration range of 1 × 10 ¹⁶ to 1 × 10 ¹⁷ / cm ³ . Here, a region having the same concentration range as the first impurity region is also referred to as an n ⁻ region.

  In this embodiment, the first doping process is performed after removing the resist mask, but the first doping process may be performed without removing the resist mask.

Next, a resist mask (a mask for protecting the channel formation region of the semiconductor layer forming the p-channel TFT of the driver circuit and its surrounding region, and the channel of the semiconductor layer forming one of the n-channel TFTs of the driver circuit) Forming a mask for protecting the formation region and its peripheral region, a channel formation region of the semiconductor layer for forming the TFT of the pixel portion, and a mask for protecting the peripheral region and the region serving as the storage capacitor), and performing a second doping process I do. The condition of the ion doping method in the second doping process is that the dose is 1.5 × 10 ¹⁵ atoms / cm ² , the acceleration voltage is 60 to 100 keV, and phosphorus (P) is doped. Here, impurity regions are formed in each semiconductor layer in a self-aligned manner using the second conductive layer as a mask. Of course, it is not added to the region covered with the mask. Thus, the second impurity region and the third impurity region are formed. An impurity element imparting n-type conductivity is added to the second impurity region in a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ . Here, a region having the same concentration range as the second impurity region is also referred to as an n ⁺ region.

The third impurity region is formed by the first conductive layer at a lower concentration than the second impurity region and imparts n-type in a concentration range of 1 × 10 ¹⁸ to 1 × 10 ¹⁹ / cm ^3. Will be added. Note that the third impurity region has a concentration gradient in which the impurity concentration increases toward the end portion of the tapered portion because doping is performed by passing the portion of the first conductive layer having a tapered shape. . Here, a region having the same concentration range as the third impurity region is also referred to as an n ⁻ region.

  Next, after removing the resist mask, a new resist mask (a mask covering the n-channel TFT) is formed, and a third doping process is performed.

In the driver circuit, a fourth impurity region in which an impurity element imparting p-type conductivity is added to the semiconductor layer forming the p-channel TFT and the semiconductor layer forming the storage capacitor by the third doping process; A fifth impurity region is formed.

Further, an impurity element imparting p-type conductivity is added to the fourth impurity region in a concentration range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ . Incidentally, in the fourth impurity region region in the preceding step phosphorus (P) has been added ^- is a (n region), the concentration thereof 1.5-3 times the addition of the impurity element imparting p-type The conductivity type is p-type. Here, a region having the same concentration range as the fourth impurity region is also referred to as a p ⁺ region.

The fifth impurity region is formed in a region overlapping with the tapered portion of the second conductive layer, and is an impurity element imparting p-type in a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ^3. To be added. Here, a region having the same concentration range as the fifth impurity region is also referred to as a p ⁻ region.

  Through the above steps, impurity regions having n-type or p-type conductivity are formed in each semiconductor layer.

  Next, an insulating film covering almost the entire surface is formed. In this example, a 50 nm-thickness silicon oxide film was formed by plasma CVD. Of course, this insulating film is not limited to the silicon oxide film, and another insulating film containing silicon may be used as a single layer or a laminated structure.

  Next, a step of activating the impurity element added to each semiconductor layer is performed. This activation step may be a rapid thermal annealing method (RTA method) using a lamp light source, a method of irradiating a YAG laser or an excimer laser from the back surface, a heat treatment using a furnace, or a combination thereof. By different methods.

  Further, in this embodiment, an example in which an insulating film is formed before the activation is shown, but an insulating film may be formed after the activation.

  Next, a first interlayer insulating film made of a silicon nitride film is formed and subjected to a heat treatment (heat treatment at 300 to 550 ° C. for 1 to 12 hours) to hydrogenate the semiconductor layer. This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the first interlayer insulating film. The semiconductor layer can be hydrogenated regardless of the presence of an insulating film made of a silicon oxide film. However, in this embodiment, since the material containing aluminum as a main component is used as the second conductive layer, it is important to set the heat treatment conditions that the second conductive layer can withstand in the hydrogenation step. As another means of hydrogenation, plasma hydrogenation (using hydrogen excited by plasma) may be performed.

  Next, a second interlayer insulating film made of an organic insulating material is formed on the first interlayer insulating film. In this embodiment, an acrylic resin film having a thickness of 1.6 μm is formed. Next, a third interlayer insulating film made of a silicon nitride film is formed. Next, a contact hole reaching the wiring and each impurity region is formed as appropriate.

Thereafter, a source electrode or a drain electrode is formed using Al, Ti, Mo, W, or the like.

  As described above, an n-channel TFT and a p-channel TFT can be formed.

  Finally, a plastic substrate is attached, and the layer including the TFT is separated from the substrate. If a material having high thermal conductivity is used as the plastic substrate, a highly reliable semiconductor device with excellent heat dissipation can be manufactured.

  The substrate having thermal conductivity is a low melting point metal (lead-free solder: tin, bismuth, zinc) on a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide. And a substrate made of a resin having a high thermal conductivity of 2 to 30 W / mK, mixed with boron nitride, aluminum nitride, magnesium oxide, beryllium oxide, or other ceramics.

Note that the substrate may be peeled off if the layer including the TFT provided on the oxide layer (the layer to be peeled) has sufficient mechanical strength.

  Further, the TFT characteristics do not change before and after peeling. The electrical characteristics of the p-channel TFT are shown in FIG.

  In this example, the substrate was peeled off at the stage of manufacturing the TFT and transferred to a plastic substrate. However, after the light emitting element having a light emitting layer as a partition or a layer containing an organic compound was formed, the substrate was peeled off, A light emitting device may be manufactured by transferring to a plastic substrate, or a counter substrate is bonded using a TFT electrode as a reflective electrode, a liquid crystal is filled between them, the substrate is peeled off, a plastic substrate is bonded, and a reflective type A liquid crystal display device may be manufactured.

  In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 3.

  In this embodiment, an example in which a light-emitting device (a top emission structure) including a light-emitting element having an organic compound layer as a light-emitting layer over a substrate having an insulating surface is shown in FIG.

2A is a top view illustrating the light-emitting device, and FIG. 2B is a cross-sectional view taken along line A-A ′ in FIG. 2A. Reference numeral 1101 indicated by a dotted line denotes a source signal line driver circuit, 1102 denotes a pixel portion, and 1103 denotes a gate signal line driver circuit. Reference numeral 1104 denotes a transparent sealing substrate, 1105 denotes a first sealing material, and the inside surrounded by the first sealing material 1105 is filled with a transparent second sealing material 1107. Note that the first sealing material 1105 contains a gap material for maintaining the distance between the substrates.

  Reference numeral 1108 denotes a wiring for transmitting signals input to the source signal line driver circuit 1101 and the gate signal line driver circuit 1103. A video signal or a clock signal is received from an FPC (flexible printed circuit) 1109 serving as an external input terminal. receive. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC.

Next, a cross-sectional structure will be described with reference to FIG. A driver circuit and a pixel portion are formed over a substrate 1110 having high thermal conductivity through an adhesive 1140. Here, a source signal line driver circuit 1101 and a pixel portion 1102 are shown as driver circuits. . Heat generated in the driver circuit and the pixel portion is radiated by the substrate 1110 having high thermal conductivity. A substrate 1110 having thermal conductivity is made of a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide, a low melting point metal (lead-free solder: tin, bismuth, zinc). ) And ceramics such as boron nitride, aluminum nitride, magnesium oxide, and beryllium oxide, and a substrate made of a resin having a high thermal conductivity of 2 to 30 W / mK. Note that this example is the same as that shown in FIG.
This corresponds to the structure C).

  Note that as the source signal line driver circuit 1101, a CMOS circuit in which an n-channel TFT 1123 and a p-channel TFT 1124 are combined is formed. These TFTs can also be obtained in accordance with Embodiment 1. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. Further, in this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown, but this is not always necessary, and it can be formed outside the substrate. Further, the structure of a TFT having a polysilicon film as an active layer is not particularly limited, and may be a top gate type TFT or a bottom gate type TFT.

  The pixel portion 1102 is formed by a plurality of pixels including a switching TFT 1111, a current control TFT 1112, and a first electrode (anode) 1113 electrically connected to the drain thereof. The current control TFT 1112 may be an n-channel TFT or a p-channel TFT, but when connected to the anode, it is preferably a p-channel TFT. In addition, it is preferable to appropriately provide a storage capacitor (not shown). Note that here, only a cross-sectional structure of one pixel among the infinitely arranged pixels is shown, and an example in which two TFTs are used for the one pixel is shown. However, three or more TFTs are appropriately used. , May be used.

  Here, since the first electrode 1113 is in direct contact with the drain of the TFT, the lower layer of the first electrode 1113 is a material layer that can be in ohmic contact with the drain made of silicon, and a layer containing an organic compound. It is desirable that the uppermost layer in contact is a material layer having a large work function. For example, when a three-layer structure of a titanium nitride film, a film containing aluminum as a main component, and a titanium nitride film is used, the resistance as a wiring is low, a good ohmic contact can be obtained, and the film can function as an anode. . The first electrode 1113 may be a single layer such as a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film, or a stack of three or more layers may be used.

In addition, insulators (referred to as banks, partition walls, barriers, banks, or the like) 1114 are formed on both ends of the first electrode (anode) 1113. The insulator 1114 may be formed using an organic resin film or an insulating film containing silicon. Here, as the insulator 1114, a positive-type photosensitive acrylic resin film is used to form the insulator having the shape shown in FIG.

In order to improve the coverage, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1114. For example, when positive photosensitive acrylic is used as a material for the insulator 1114, it is preferable that only the upper end portion of the insulator 1114 have a curved surface with a curvature radius (0.2 μm to 3 μm). As the insulator 1114, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used.

  Alternatively, the insulator 1114 may be covered with a protective film formed of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.

Further, a layer 1115 containing an organic compound is selectively formed over the first electrode (anode) 1113 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1116 is formed over the layer 1115 containing an organic compound. As the cathode, a material having a low work function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. Here, as the second electrode (cathode) 1116 so as to transmit light, a thin metal film, a transparent conductive film (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like) is used. In this manner, a light-emitting element 1118 including the first electrode (anode) 1113, the layer 1115 containing an organic compound, and the second electrode (cathode) 1116 is formed. Here, since the light-emitting element 1118 emits white light, a color filter including a colored layer 1131 and a light-blocking layer (BM) 1132 (for the sake of simplicity, an overcoat layer is not shown here) is provided.

  Further, if each layer containing an organic compound capable of emitting R, G, and B is selectively formed, a full color display can be obtained without using a color filter.

In addition, a transparent protective layer 1117 is formed to seal the light emitting element 1118. As this transparent protective layer 1117, an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by sputtering (DC method or RF method) or PCVD method, a thin film mainly composed of carbon (DLC film, CN film, etc.) ) Or a laminate of these. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metals can be obtained. A silicon nitride target may be used. The transparent protective layer may be formed using a film forming apparatus using remote plasma. Moreover, in order to allow light emission to pass through the transparent protective layer, it is preferable to make the film thickness of the transparent protective layer as thin as possible.

In addition, in order to seal the light emitting element 1118, the sealing substrate 1104 is attached to the first sealing material 1105 and the second sealing material 1107 in an inert gas atmosphere. Note that an epoxy resin is preferably used as the first sealing material 1105 and the second sealing material 1107. The first sealing material 1105 and the second sealing material 1107 are preferably materials that do not transmit moisture and oxygen as much as possible.

  Further, in this embodiment, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like is used as a material constituting the sealing substrate 1104 in addition to a glass substrate or a quartz substrate. be able to. Further, after the sealing substrate 1104 is bonded using the first sealing material 1105 and the second sealing material 1107, it is also possible to seal with a third sealing material so as to cover the side surface (exposed surface).

  By enclosing the light emitting element in the first sealing material 1105 and the second sealing material 1107 as described above, the light emitting element can be completely blocked from the outside, and deterioration of the organic compound layer such as moisture and oxygen from the outside can be performed. It can prevent the urging substance from entering. Therefore, a highly reliable light-emitting device can be obtained.

  In addition, when a transparent conductive film is used for the first electrode 1113, a double-sided light-emitting device can be manufactured.

  In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 3 and Embodiment 1.

In Example 2, an example in which a layer containing an organic compound is formed on the anode and a cathode that is a transparent electrode is formed on the layer containing the organic compound (hereinafter referred to as a top emission structure) is shown. In this embodiment, a layer including an organic compound is formed on an anode, and a light emitting element in which a cathode is formed on the organic compound layer is provided. Light emission generated in the layer including the organic compound is transmitted from the anode which is a transparent electrode to the TFT. An example of a structure of taking out toward the side (hereinafter referred to as a bottom emission structure) is shown.

  Here, an example of a light emitting device having a bottom emission structure is shown in FIG.

5A is a top view illustrating the light-emitting device, and FIG. 5B is a cross-sectional view taken along line A-A ′ in FIG. 5A. Reference numeral 1201 indicated by a dotted line denotes a source signal line driver circuit, 1202 denotes a pixel portion, and 1203 denotes a gate signal line driver circuit. Further, 1204 is a substrate having high thermal conductivity, 1205a is a sealing material containing a gap material for keeping a pair of substrates, and the inside surrounded by the sealing material 1205a is filled with the sealing material 1205b. Has been. You may arrange | position a desiccant in the sealing material 1205b.

  Reference numeral 1208 denotes a wiring for transmitting signals input to the source signal line driver circuit 1201 and the gate signal line driver circuit 1203, and a video signal and a clock signal are received from an FPC (flexible printed circuit) 1209 which is an external input terminal. receive.

  Next, a cross-sectional structure is described with reference to FIG. A driver circuit and a pixel portion are formed over a light-transmitting substrate 1210 with an adhesive 1240. Here, a source signal line driver circuit 1201 and a pixel portion 1202 are shown as driver circuits. Note that as the source signal line driver circuit 1201, a CMOS circuit in which an n-channel TFT 1223 and a p-channel TFT 1224 are combined is formed. These TFTs can also be obtained in accordance with Embodiment 1.

  The pixel portion 1202 is formed by a plurality of pixels including a switching TFT 1211, a current control TFT 1212, and a first electrode (anode) 1213 made of a transparent conductive film electrically connected to the drain thereof.

Here, the first electrode 1213 is formed so as to partially overlap with the connection electrode, and the first electrode 1213 is electrically connected to the drain region of the TFT through the connection electrode. The first electrode 1213 is a transparent conductive film having a large work function (ITO (indium tin oxide alloy), indium oxide zinc oxide alloy (In ₂ O ₃ —ZnO), zinc oxide (ZnO), or the like. ) Is desirable.

In addition, insulators (referred to as banks, partition walls, barriers, banks, or the like) 1214 are formed at both ends of the first electrode (anode) 1213. In order to improve the coverage, a curved surface having a curvature is formed at the upper end portion or the lower end portion of the insulator 1214. Alternatively, the insulator 1214 may be covered with a protective film made of an aluminum nitride film, an aluminum nitride oxide film, a thin film containing carbon as its main component, or a silicon nitride film.

A layer 1215 containing an organic compound is selectively formed over the first electrode (anode) 1213 by an evaporation method using an evaporation mask or an inkjet method. Further, a second electrode (cathode) 1216 is formed over the layer 1215 containing an organic compound. As the cathode, a material having a low work function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. In this manner, a light-emitting element 1218 including the first electrode (anode) 1213, the layer 1215 containing an organic compound, and the second electrode (cathode) 1216 is formed. The light emitting element 1218 emits light in the arrow direction shown in FIG. Here, the light-emitting element 1218 is one of light-emitting elements that can obtain R, G, or B monochromatic light emission, and includes three layers each including an organic compound that selectively emits R, G, and B light-emitting elements. Full color with light emitting elements.

In addition, a protective layer 1217 is formed to seal the light emitting element 1218. As this transparent protective layer 1217, an insulating film mainly composed of silicon nitride or silicon nitride oxide obtained by sputtering (DC method or RF method) or PCVD method, or a thin film mainly composed of carbon (DLC film, CN film) Etc.) or a laminate of these. If a silicon target is used and formed in an atmosphere containing nitrogen and argon, a silicon nitride film having a high blocking effect against impurities such as moisture and alkali metals can be obtained. A silicon nitride target may be used. Further, the protective layer may be formed using a film forming apparatus using remote plasma.

  In addition, in order to seal the light emitting element 1218, a sealing substrate 1204 is attached with a sealant 1205a and 1205b in an inert gas atmosphere. Note that an epoxy-based resin is preferably used as the sealing materials 1205a and 1205b. 1205a and 1205b are preferably made of a material that does not transmit moisture and oxygen as much as possible.

  In this embodiment, a plastic substrate made of polyester or acrylic can be used as the substrate 1210 in addition to a plastic substrate, a glass substrate, or a quartz substrate.

  Further, this embodiment can be freely combined with Embodiment Modes 1 to 3, Embodiment 1 or Embodiment 2.

In this embodiment, a cross-sectional structure of one pixel, particularly a connection between a light emitting element and a TFT and a shape of a partition wall arranged between the pixels will be described.

  In FIG. 7A, 40 is a substrate, 41 is a partition wall (also called bank), 42 is an insulating film, 43 is a first electrode (anode), 44 is a layer containing an organic compound, and 45 is a second electrode ( A cathode 46 is a TFT.

  In the TFT 46, 46a is a channel formation region, 46b and 46c are source regions or drain regions, 46d is a gate electrode, and 46e and 46f are source or drain electrodes. Although a top gate type TFT is shown here, it is not particularly limited, and may be an inverted stagger type TFT or a forward stagger type TFT. Note that 46 f is an electrode for connecting the TFT 46 by partially overlapping with the first electrode 43.

  FIG. 7B illustrates a cross-sectional structure which is partly different from that in FIG.

In FIG. 7B, the way of overlapping the first electrode with the electrode is different from the structure of FIG. 7A, and after patterning the first electrode, the electrode is formed so as to partially overlap. It is connected with TFT.

  FIG. 7C illustrates a cross-sectional structure which is partly different from that in FIG.

In FIG. 7C, an additional interlayer insulating film is provided, and the first electrode is connected to the electrode of the TFT through a contact hole.

Moreover, as a cross-sectional shape of the partition 41, it is good also as a taper shape as shown in FIG.7 (D). After the resist is exposed using a photolithography method, it is obtained by etching a non-photosensitive organic resin or an inorganic insulating film.

  If a positive photosensitive organic resin is used, the shape shown in FIG. 7E and the shape having a curved surface at the upper end can be obtained.

If a negative photosensitive resin is used, the shape as shown in FIG. 7F and the shape having curved surfaces at the upper end and the lower end can be obtained.

  In addition, this embodiment can be freely combined with any one of Embodiment Modes 1 to 3 and Embodiments 1 to 3.

By implementing the present invention, various modules (active matrix EL module, reflective liquid crystal display device, active matrix EC module) can be completed. That is, by implementing the present invention, all electronic devices incorporating them are completed.

  Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, projectors, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.), etc. Can be mentioned. Examples of these are shown in FIGS.

FIG. 8A illustrates a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like. By using a plastic substrate having thermal conductivity according to the present invention, the reliability can be improved and the weight can be reduced.

FIG. 8B shows a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, an image receiving portion 2106, and the like. By using a plastic substrate having thermal conductivity according to the present invention, the reliability can be improved and the weight can be reduced.

FIG. 8C shows a game machine, which includes a main body 2201, a display portion 2205, and the like.

FIG. 8D shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, an operation switch 2405, and the like. This player uses a DVD (Digital Versatile Disc), CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet.

FIG. 8E shows a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, operation switches 2504, an image receiving portion (not shown), and the like. By using a plastic substrate having thermal conductivity according to the present invention, the reliability can be improved and the weight can be reduced.

  FIG. 9A shows a mobile phone, which includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, an antenna 2906, an image input portion (CCD, image sensor, etc.) 2907, and the like.

FIG. 9B illustrates a portable book (electronic book), which includes a main body 3001, a display portion 3002,
3003, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like. By using a plastic substrate having thermal conductivity according to the present invention, the reliability can be improved and the weight can be reduced.

  FIG. 9C illustrates a display, which includes a main body 3101, a support base 3102, a display portion 3103, and the like. Reliability can be improved by using a plastic substrate having thermal conductivity according to the present invention.

  Incidentally, the display shown in FIG. 9C is a medium or small size display, for example, a screen size of 5 to 20 inches. Further, in order to form a display portion having such a size, it is preferable to use a substrate having a side of 1 m and perform mass production by performing multiple chamfering.

  As described above, the applicable range of the present invention is so wide that the present invention can be applied to methods for manufacturing electronic devices in various fields. In addition, the electronic device of this example can be realized by using any combination of Embodiment Modes 1 to 3 and Examples 1 to 4.

In the electronic device shown in Embodiment 5, a module in which an IC including a controller, a power supply circuit, and the like is mounted on a panel in which a light emitting element is sealed is mounted. Both the module and the panel correspond to one form of the light emitting device. In this embodiment, a specific configuration of the module will be described.

  FIG. 10A shows an external view of a module in which a controller 1801 and a power supply circuit 1802 are mounted on a panel 1800. The panel 1800 includes a pixel portion 1803 in which a light-emitting element is provided for each pixel, a scanning line driver circuit 1804 for selecting pixels included in the pixel portion 1803, and a signal line driver circuit for supplying video signals to the selected pixels. 1805 are provided.

  A printed circuit board 1806 is provided with a controller 1801 and a power supply circuit 1802, and various signals and power supply voltages output from the controller 1801 or the power supply circuit 1802 are connected to the pixel portion 1803 of the panel 1800 and the scanning line driving circuit via the FPC 1807. 1804, supplied to the signal line driver circuit 1805.

  The power supply voltage and various signals to the printed circuit board 1806 are supplied via an interface (I / F) unit 1808 in which a plurality of input terminals are arranged.

  Note that in this embodiment, the printed board 1806 is mounted on the panel 1800 using FPC, but the present invention is not necessarily limited to this configuration. The controller 1801 and the power supply circuit 1802 may be directly mounted on the panel 1800 using a COG (Chip on Glass) method.

  Further, in the printed board 1806, noise may occur in the power supply voltage or the signal, or the rise of the signal may become dull, due to the capacitance formed between the drawn wirings or the resistance of the wiring itself. Therefore, various elements such as a capacitor and a buffer may be provided on the printed circuit board 1806 to prevent noise from being applied to the power supply voltage and the signal and the rise of the signal from being slowed down.

  FIG. 10B is a block diagram illustrating a structure of the printed board 1806. Various signals and the power supply voltage supplied to the interface 1808 are supplied to the controller 1801 and the power supply voltage 1802.

  The controller 1801 includes an A / D converter 1809, a phase locked loop (PLL) 1810, a control signal generator 1811, and SRAMs (Static Random Access Memory) 1812 and 1813. In this embodiment, an SRAM is used. However, an SDRAM or a dynamic random access memory (DRAM) can be used instead of the SRAM if data can be written or read at high speed.

  A video signal supplied via the interface 1808 is parallel-serial converted by an A / D converter 1809 and input to the control signal generation unit 1811 as a video signal corresponding to each color of R, G, and B. The A / D converter 1809 generates an Hsync signal, a Vsync signal, a clock signal CLK, and an AC voltage (AC Cont) based on various signals supplied via the interface 1808, and inputs them to the control signal generator 1811. Be done

  The phase locked loop 1810 has a function of matching the frequency of various signals supplied via the interface 1808 with the phase of the operating frequency of the control signal generator 1811. The operating frequency of the control signal generator 1811 is not necessarily the same as the frequency of various signals supplied via the interface 1808, but the operating frequency of the control signal generator 1811 is adjusted in the phase locked loop 1810 so as to be synchronized with each other. .

  The video signal input to the control signal generation unit 1811 is temporarily written and held in the SRAMs 1812 and 1813. The control signal generation unit 1811 reads out video signals corresponding to all the pixels bit by bit from among all the video signals held in the SRAM 1812, and supplies them to the signal line driver circuit 1805 of the panel 1800.

  In addition, the control signal generation unit 1811 supplies information regarding a period during which the light emitting element emits light for each bit to the scanning line driving circuit 1804 of the panel 1800.

The power supply circuit 1802 supplies a predetermined power supply voltage to the signal line driver circuit 1805, the scan line driver circuit 1804, and the pixel portion 1803 of the panel 1800.

  Next, a detailed configuration of the power supply circuit 1802 will be described with reference to FIG. The power supply circuit 1802 of this embodiment includes a switching regulator 1854 using four switching regulator controls 1860 and a series regulator 1855.

  In general, a switching regulator is smaller and lighter than a series regulator, and can perform step-up and positive / negative inversion as well as step-down. On the other hand, series regulators are used only for step-down, but output voltage accuracy is better than switching regulators, and almost no ripple or noise occurs. In the power supply circuit 1802 of this embodiment, both are used in combination.

  A switching regulator 1854 shown in FIG. 11 includes a switching regulator control (SWR) 1860, an attenuator (ATT) 1861, a transformer (T) 1862, an inductor (L) 1863, and a reference power supply (Vref) 1864. An oscillation circuit (OSC) 1865, a diode 1866, a bipolar transistor 1867, a variable resistor 1868, and a capacitor 1869.

  The switching regulator 1854 converts a voltage of an external Li ion battery (3.6 V) or the like, so that a power supply voltage supplied to the cathode and a power supply voltage supplied to the switching regulator 1854 are generated.

  The series regulator 1855 includes a band gap circuit (BG) 1870, an amplifier 1871, an operational amplifier 1872, a current source 1873, a variable resistor 1874, and a bipolar transistor 1875. The power supply voltage generated in the switching regulator 1854 Is supplied.

  The series regulator 1855 uses the power supply voltage generated in the switching regulator 1854 and, based on the constant voltage generated in the band gap circuit 1870, a wiring (current supply line) for supplying current to the anode of each color light emitting element. ) To generate a DC power supply voltage.

  Note that the current source 1873 is used in the case of a driving method in which a current of a video signal is written to a pixel. In this case, the current generated in the current source 1873 is supplied to the signal line driver circuit 1805 of the panel 1800. Note that the current source 1873 is not necessarily provided in the case of a driving method in which a voltage of a video signal is written to a pixel.

  Note that the switching regulator, the OSC, the amplifier, and the operational amplifier can be formed using TFTs.

  This embodiment can be freely combined with any one of Embodiment Modes 1 to 3 and Embodiments 1 to 5.

  In this embodiment, an example of manufacturing a passive matrix light-emitting device (also referred to as a simple matrix light-emitting device) is described.

  First, a metal film (typically a tungsten film) and an oxide layer (typically a silicon oxide film) are stacked on a glass substrate, and a plurality of first wirings are formed on the glass substrate by using a material such as ITO. (Material used as anode) Next, a partition made of a resist or a photosensitive resin is formed so as to surround the light emitting region. Next, a layer containing an organic compound is formed in a region surrounded by the partition wall by an evaporation method or an inkjet method. In the case of full color display, a layer containing an organic compound is formed by appropriately selecting materials. Next, a plurality of stripe-shaped second wirings are formed of a metal material (a material serving as a cathode) such as Al or an Al alloy on the partition and the layer containing the organic compound so as to cross the plurality of first wirings made of ITO. To do. Through the above steps, a light-emitting element using the layer containing an organic compound as a light-emitting layer can be formed.

  Next, a sealing substrate is attached with a sealing material, or a protective film is provided over the second wiring and sealed. As a sealing substrate, a low melting point metal (lead-free solder: tin, bismuth, zinc) and a synthetic resin made of polypropylene, polypropylene sulfide, polycarbonate, polyetherimide, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polyphthalamide, A substrate having thermal conductivity made of a resin having a high thermal conductivity of 2 to 30 W / mK mixed with ceramics such as boron nitride, aluminum nitride, magnesium oxide, and beryllium oxide is used.

  Next, the glass substrate is peeled off. It can be peeled off in the oxide layer or at the interface by physical means. Then, a plastic substrate having translucency is bonded with an adhesive.

FIG. 12A shows an example of a cross-sectional view of the display device of this embodiment.

On the main surface of the plastic substrate 100 having high thermal conductivity, there is provided a pixel portion 201 in which a first electrode and a second electrode intersect with each other through an adhesive 152 and a light emitting element is formed at the intersection. . That is, a pixel portion 201 in which light-emitting pixels are arranged in a matrix is formed. The number of pixels is 640 × 480 dots for VGA specifications, 1024 × 768 dots for XGA specifications, 1365 × 1024 dots for SXGA specifications, and 1600 × 1200 dots for UXGA specifications. The number of second electrodes is provided accordingly. Further, an input terminal portion in which a terminal pad connected to an external circuit is formed is provided at an end portion of the substrate 101 and in a peripheral portion of the pixel portion 201.

  In the display device illustrated in FIG. 12A, the pixel portion includes a first electrode 102 extending in the left-right direction on the main surface of the substrate 100 with an adhesive 152 interposed therebetween, and a light-emitting body formed thereon. A thin film 105 (which includes a medium that emits light by electroluminescence, and is referred to as an EL layer for convenience in the following description) and a second electrode 106 formed on the upper layer and extending in the vertical direction are formed. Is formed. That is, pixels are arranged in a matrix by forming the first electrode 102 and the second electrode 106 in the row direction and the column direction. The input terminal is formed of the same material as the first electrode or the second electrode. The number of input terminals is the same as the number of first electrodes and second electrodes arranged in the row direction and the column direction.

  The cross-sectional shape of the partition wall 104 has a curved surface shape from the lower end portion in contact with the first electrode 102 to the upper end portion. The curved surface shape is a shape having at least one radius of curvature centered on the partition wall or the lower layer side, or at least one first curvature radius centered outside the partition wall 104 at the lower end contacting the first electrode 102. And at least one second radius of curvature centered on the partition wall or the lower layer side at the upper end of the partition wall 104. The cross-sectional shape may be such that the curvature continuously changes from the lower end portion to the upper end portion of the partition wall 104. The EL layer is formed along the curved surface shape, and stress is relieved by the curved surface shape. That is, the light-emitting element in which different members are stacked has an effect of alleviating distortion due to thermal stress.

A mode in which a counter substrate 150 that seals the pixel portion 201 is fixed with a sealant 141 is shown. The space between the substrate 101 and the counter substrate 150 may be filled with an inert gas, or the organic resin material 140 may be enclosed. In any case, since the light-emitting element in the pixel portion 201 is covered with the barrier insulating film 107, deterioration due to exogenous impurities can be prevented without providing a desiccant or the like.

  In FIG. 12A, colored layers 142 to 144 are formed on the counter substrate 150 side corresponding to each pixel of the pixel portion 201. The planarization layer 145 prevents a step due to the colored layer. On the other hand, FIG. 12B illustrates a structure in which colored layers 142 to 144 are provided on the substrate 101 side, and the first electrode 102 is formed over the planarization film 145. The substrate 101 is bonded with an adhesive 153. The counter substrate 151 is a substrate having high thermal conductivity. Further, FIG. 12B is different from FIG. 12A in the light emission direction. In addition, the same code | symbol is used for the same part.

  In addition, the present invention can be implemented not only in a full-color display device but also in a single-color light emitting device such as a surface light source and an electrical decoration device.

  Further, this embodiment can be freely combined with any one of Embodiment Modes 1 to 3 and Embodiment 5.

1 is a diagram illustrating a first embodiment. FIG. FIG. 6 is a diagram showing Example 2. FIG. 6 is a diagram showing a second embodiment. FIG. 10 is a diagram showing a third embodiment. FIG. 6 is a diagram showing Example 3. It is a figure which shows the electrical property of TFT. (Example 1) It is a figure explaining the connection of a TFT and a 1st electrode, and a partition shape. Example 4 FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device. It is a figure which shows a module. (Example 6) It is a figure which shows a block diagram. (Example 6) It is a figure which shows a passive type light-emitting device. (Example 7)

Claims (14)

Forming a layer to be peeled including a semiconductor element on the first substrate;
Forming an organic resin film on the layer to be peeled;
Adhering the second substrate on the organic resin film using a double-sided tape, sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate,
Peeling off the layer to be peeled from the first substrate;
Adhering a third substrate to the layer to be peeled, sandwiching the layer to be peeled and the organic resin film between the second substrate and the third substrate,
Separating the second substrate from the double-sided tape;
Separating the double-sided tape from the organic resin film,
A method for manufacturing a semiconductor device, wherein the organic resin film is removed with a solvent. Forming a layer to be peeled including a semiconductor element on the first substrate;
Forming an organic resin film on the layer to be peeled;
Adhering the second substrate on the organic resin film using a double-sided tape, sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate,
A third substrate having a higher rigidity than the first substrate is bonded to the first substrate;
Peeling off the layer to be peeled from the first substrate and the third substrate;
Adhering a fourth substrate to the layer to be peeled, sandwiching the layer to be peeled and the organic resin film between the second substrate and the fourth substrate,
Separating the second substrate from the double-sided tape;
Separating the double-sided tape from the organic resin film,
A method for manufacturing a semiconductor device, wherein the organic resin film is removed with a solvent. Forming a layer to be peeled including a semiconductor element on the first substrate;
Forming an organic resin film on the layer to be peeled;
Adhering the second substrate on the organic resin film using a double-sided tape, sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate,
Peeling off the layer to be peeled from the first substrate;
Adhering a third substrate to the layer to be peeled, sandwiching the layer to be peeled and the organic resin film between the second substrate and the third substrate,
Separating the second substrate from the double-sided tape;
Separating the double-sided tape from the organic resin film,
Removing the organic resin film with a solvent;
Forming a layer containing an organic compound on the layer to be peeled;
Forming an electrode on the layer containing the organic compound;
4. A semiconductor device, wherein a fourth substrate is bonded onto the layer to be peeled, and the layer to be peeled, the layer containing an organic compound, and the electrode are sandwiched between the third substrate and the fourth substrate. Manufacturing method. Forming a layer to be peeled including a semiconductor element on the first substrate;
Forming an organic resin film on the layer to be peeled;
Adhering the second substrate on the organic resin film using a double-sided tape, sandwiching the peeled layer and the organic resin film between the first substrate and the second substrate,
A third substrate having a higher rigidity than the first substrate is bonded to the first substrate;
Peeling off the layer to be peeled from the first substrate and the third substrate;
Adhering a fourth substrate to the layer to be peeled, sandwiching the layer to be peeled and the organic resin film between the second substrate and the fourth substrate,
Separating the second substrate from the double-sided tape;
Separating the double-sided tape from the organic resin film,
Removing the organic resin film with a solvent;
Forming a layer containing an organic compound on the layer to be peeled;
Forming an electrode on the layer containing the organic compound;
A semiconductor device, wherein a fifth substrate is bonded onto the layer to be peeled, and the layer to be peeled, the layer containing an organic compound, and the electrode are sandwiched between the fourth substrate and the fifth substrate. Manufacturing method.   3. The inorganic insulating film according to claim 1, wherein the layer to be peeled includes a thin film transistor, an electrode electrically connected to the thin film transistor, a partition wall surrounding the periphery of the electrode electrically connected to the thin film transistor, and the partition wall. A method for manufacturing a semiconductor device, comprising:   4. The method for manufacturing a semiconductor device according to claim 3, wherein the third substrate and the fourth substrate are plastic substrates.   4. The semiconductor device according to claim 3, wherein one of the third substrate and the fourth substrate is a light-transmitting plastic substrate and the other is a heat-conductive plastic substrate. Manufacturing method. 8. The plastic substrate according to claim 7, wherein the plastic substrate having thermal conductivity is a plastic substrate having a SiN _X film, a SiN _X O _Y film, an AlN _X film, or an AlN _X O _Y film formed on a surface thereof. A method for manufacturing a semiconductor device.   9. The method for manufacturing a semiconductor device according to claim 6, wherein the plastic substrate is a plastic film.   The adhesiveness between the layer to be peeled and the third substrate is higher than the adhesiveness between the layer to be peeled and the second substrate by the double-sided tape according to claim 1, 3, 6, 7, 8 or 9. A method for manufacturing a semiconductor device, which is expensive. In claim 3, 4, 6, 7, 8 or 9,
The layer to be peeled includes a thin film transistor, an electrode electrically connected to the thin film transistor, a partition wall surrounding the periphery of the electrode electrically connected to the thin film transistor, and an inorganic insulating film covering the partition wall,
The method for manufacturing a semiconductor device is characterized in that the layer containing an organic compound is formed in contact with the electrode that is electrically connected to the thin film transistor.   5. The semiconductor device according to claim 2, wherein the adhesion between the layer to be peeled and the fourth substrate is higher than the adhesion between the layer to be peeled by the double-sided tape and the second substrate. Manufacturing method.   The method for manufacturing a semiconductor device according to claim 2, wherein the third substrate is bonded to the first substrate using a double-sided tape.   14. The method for manufacturing a semiconductor device according to claim 1, wherein the solvent is water or alcohol.

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