JP2006059941A - Manufacturing method of semiconductor chip - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To overcome the difficulty of surely fracturing certainly though an adhesion film is sticky in normal state and extended under tension in the case of using the method for fracturing a wafer along a designed division line, by extending a dicing tape to which the wafer is stuck. <P>SOLUTION: The manufacturing method of a semiconductor chip comprises a degenerated layer formation process for forming a degenerated layer 210 by the irradiation from the rear face side of a semiconductor wafer 2 along a designed division, an adhesive film sticking process for sticking an adhesive film 6 hardened by having ultraviolet rays irradiated at the rear face of the semiconductor wafer 2, a wafer support process for sticking the adhesive film 6 side of the semiconductor wafer 2 to a dicing tape 70 arranged by an annular frame 7, an adhesive film hardening process for causing the adhesive film 6 to harden, by irradiating it with ultraviolet rays 84 so as to harden it, and an extending process for fracturing the semiconductor wafer 2 and the adhesive film 6 along the designed division line, by extending the dicing tape 70. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor chip in which an adhesive film for die bonding is attached to the back surface.

  For example, in the semiconductor device manufacturing process, circuits such as IC and LSI are formed in a plurality of regions partitioned by streets (planned cutting lines) formed in a lattice shape on the surface of a semiconductor wafer having a substantially disk shape, Each semiconductor chip is manufactured by dividing each region in which the circuit is formed along a line to be cut. As a dividing device for dividing the semiconductor wafer, a cutting device called a dicing device is generally used, and this cutting device cuts the semiconductor wafer along a planned cutting line with a cutting blade having a thickness of about 20 μm. The semiconductor chip thus divided is packaged and widely used in electric devices such as mobile phones and personal computers.

Individually divided semiconductor chips are mounted on the back with an adhesive film for die bonding called a die attach film having a thickness of 20 to 40 μm formed of an epoxy resin or the like, and the semiconductor chip is supported via this adhesive film. The die bonding frame is bonded by heating. As a method of attaching the adhesive film for die bonding to the back surface of the semiconductor chip, the adhesive film is attached to the back surface of the semiconductor wafer, the semiconductor wafer is attached to the dicing tape through the adhesive film, and then the semiconductor wafer By cutting along with the adhesive film with a cutting blade along the planned cutting line formed on the front surface, a semiconductor chip having the adhesive film mounted on the back surface is formed. (For example, refer to Patent Document 1.)
JP 2000-182959 A

  However, when the semiconductor wafer is cut with a cutting blade, the cutting blade has a thickness of about 20 μm, so that the division lines to partition each circuit require a width of about 50 μm. For this reason, in the case of a chip having a small size such as an individual semiconductor, there is a problem that the area ratio occupied by the line to be divided becomes large and the productivity is poor.

On the other hand, in recent years, a laser processing method has been attempted in which a pulsed laser beam having transparency to a workpiece is used, and a focused laser beam is aligned within the region to be divided to emit the pulsed laser beam. The dividing method using this laser processing method irradiates a pulse laser beam having a wavelength of 1064 nm, for example, having a light converging point from one surface of the workpiece and having a converging point inside, and irradiating the workpiece. A modified layer is continuously formed along the planned cutting line inside, and an external force is applied along the planned dividing line whose strength has been reduced by the formation of the modified layer, thereby converting the workpiece into the planned cutting line. It divides along. (For example, see Patent Document 2.)
Japanese Patent No. 3408805

In addition, a method of adhering an adhesive film to the back surface of a chip divided by a dividing method using a laser processing method has been proposed. For example, see Patent Document 3. )
JP 2003-338467 A

  The technique disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 2003-338467 is a line in which a pulse laser beam is divided from the front side of the wafer after an adhesive film is attached to the back surface of the wafer and the adhesive film side is attached to a dicing tape. , The deteriorated layer is formed along the line to be divided inside the wafer. Then, by expanding the dicing tape to which the wafer having the altered layer formed is attached along the planned division line, the wafer is divided along the planned division line, and the adhesive film is divided along the planned division line. Break.

Thus, a test metal pattern called a test element group (Teg) for testing the function of a circuit or an insulating film is often laminated on the planned division line on the surface of the semiconductor wafer. In the semiconductor wafer in which the metal pattern and the insulating film are laminated on the planned division line in this way, even if the laser beam is irradiated along the planned division line from the surface side, the laser beam is blocked by the metal pattern or the insulating film, A predetermined altered layer cannot be formed inside. Therefore, it is necessary to irradiate a laser beam from the back side of the semiconductor wafer in order to form a deteriorated layer along the planned dividing line inside the wafer. For this reason, an adhesive film is applied to the back surface of the semiconductor wafer before irradiating the laser beam. It cannot be pasted in advance.
In addition, by using a method of breaking the wafer and the adhesive film attached to the wafer along the planned dividing line by expanding the dicing tape to which the wafer is attached, the adhesive film is in a normal state. There is a problem that it is sticky and stretches when applied with tension, making it difficult to reliably break.

  The present invention has been made in view of the above-mentioned facts, and its main technical problem is to form a deteriorated layer inside by irradiating a laser beam along a planned division line of a semiconductor wafer, and the division in which this deteriorated layer is formed. An object of the present invention is to provide a method of manufacturing a semiconductor chip in which a die bonding adhesive film is attached to the back surface using a technique of dividing into individual semiconductor chips along a predetermined line.

In order to solve the above-mentioned main technical problem, according to the present invention, a plurality of division lines are formed in a lattice shape on the surface, and a circuit is formed in a plurality of regions partitioned by the plurality of division lines. A semiconductor chip manufacturing method for dividing a semiconductor wafer into individual semiconductor chips along the planned division line,
A deteriorated layer forming step of irradiating a laser beam having transparency to the semiconductor wafer from the back surface side of the semiconductor wafer along the planned dividing line, and forming a deteriorated layer along the planned dividing line inside the wafer. When,
An adhesive film sticking step of sticking an adhesive film that is cured by irradiating ultraviolet rays on the back surface of the semiconductor wafer on which the deteriorated layer forming step has been performed;
A wafer supporting step of adhering the adhesive film side of the semiconductor wafer on which the adhesive film adhering step has been performed to a dicing tape attached to an annular frame;
An adhesive film curing step in which the wafer supporting step is performed and the adhesive film side of the semiconductor wafer is adhered to the dicing tape, and the adhesive film is cured by irradiating ultraviolet rays from the dicing tape side;
A tape expansion step of breaking the semiconductor wafer and the adhesive film along the predetermined dividing line by expanding the dicing tape after the adhesive film curing step is performed.
A method of manufacturing a semiconductor chip is provided.

According to the present invention, a semiconductor wafer in which a plurality of division lines are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of division lines is provided. A method of manufacturing a semiconductor chip, which is divided into individual semiconductor chips along a line,
A deteriorated layer forming step of irradiating a laser beam having transparency to the semiconductor wafer from the back surface side of the semiconductor wafer along the planned dividing line, and forming a deteriorated layer along the planned dividing line inside the wafer. When,
An adhesive film sticking step of sticking an adhesive film that is cured by irradiating ultraviolet rays on the back surface of the semiconductor wafer on which the deteriorated layer forming step has been performed;
An adhesive film curing step of curing the adhesive film by irradiating the adhesive film adhered to the back surface of the semiconductor wafer with ultraviolet rays;
After the adhesive film curing step is performed, a wafer support step of sticking the adhesive film side of the semiconductor wafer to a dicing tape attached to an annular frame;
A tape expansion step of breaking the semiconductor wafer and the adhesive film along the predetermined dividing line by expanding the dicing tape after the wafer support step is performed.
A method of manufacturing a semiconductor chip is provided.

Furthermore, according to the present invention, a semiconductor wafer in which a plurality of division lines are formed on the surface in a lattice pattern and a circuit is formed in a plurality of regions partitioned by the plurality of division lines is provided. A method of manufacturing a semiconductor chip, which is divided into individual semiconductor chips along a line,
A deteriorated layer forming step of irradiating a laser beam having transparency to the semiconductor wafer from the back surface side of the semiconductor wafer along the planned dividing line, and forming a deteriorated layer along the planned dividing line inside the wafer. When,
A wafer support step in which the rear surface of the semiconductor wafer subjected to the altered layer forming step is attached to an adhesive film that is disposed on a dicing tape attached to an annular frame and cured by irradiating ultraviolet rays;
An adhesive film curing step in which the wafer supporting step is performed and the semiconductor wafer is adhered to the adhesive film disposed on the dicing tape, and the adhesive film is cured by irradiating ultraviolet rays from the dicing tape side. When,
A tape expansion step of breaking the semiconductor wafer and the adhesive film along the predetermined dividing line by expanding the dicing tape after the adhesive film curing step is performed.
A method of manufacturing a semiconductor chip is provided.

  According to the present invention, since the deteriorated layer forming step irradiates the laser beam from the back side of the semiconductor wafer, the deteriorated layer can be formed at a predetermined position along the planned division line of the semiconductor wafer. The adhesive film to be attached to the back surface of the semiconductor wafer on which the altered layer is formed along the planned dividing line by carrying out the altered layer forming step uses a resin that is cured by irradiating ultraviolet rays. After curing the adhesive film by irradiating the film with ultraviolet rays, the tape expansion process is performed to expand the dicing tape, thereby breaking the semiconductor wafer and the adhesive film along the planned dividing line. Since the stretchability is reduced, the semiconductor wafer can be reliably broken along the planned dividing line simultaneously with the breaking of the semiconductor wafer.

  Hereinafter, a preferred embodiment of a semiconductor chip manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 shows a perspective view of a semiconductor wafer divided into individual semiconductor chips according to the present invention. A semiconductor wafer 2 shown in FIG. 1 is made of, for example, a silicon wafer having a thickness of 300 μm, and a plurality of division lines 21 are formed in a lattice pattern on the surface 2a. On the surface 2 a of the semiconductor wafer 2, circuits 22 as functional elements are formed in a plurality of regions partitioned by a plurality of division lines 21. Hereinafter, a first embodiment of a semiconductor chip manufacturing method for dividing the semiconductor wafer 2 into individual semiconductor chips will be described.

  As shown in FIG. 2, the protective member 3 is stuck on the surface 2a of the semiconductor wafer 2 described above (protective member sticking step).

  If the protective member 3 is attached to the front surface 2a of the semiconductor wafer 2 by carrying out the protective member attaching step, a back surface polishing step is performed in which the back surface 2b of the semiconductor wafer 2 is polished into a mirror surface. This back surface polishing step is performed in order to prevent the infrared laser beam irradiated from the back surface 2b side of the semiconductor wafer 2 from being irregularly reflected. That is, in a wafer formed of silicon or the like, when an infrared laser beam is irradiated with a condensing point inside, if the surface roughness of the surface on which the infrared laser beam is irradiated is rough, it is irregularly reflected on the surface and is predetermined. This is because the laser beam does not reach the condensing point, and it is difficult to form a predetermined deteriorated layer inside. This back surface polishing step is performed by the polishing apparatus 4 in the embodiment shown in FIG. That is, in the back surface polishing step, first, the protection member 3 side of the semiconductor wafer 2 is placed on the chuck table 41 of the polishing apparatus 4 as shown in FIG. 3 (therefore, the back surface 2b of the semiconductor wafer 2 is on the upper side). The semiconductor wafer 2 is sucked and held on the chuck table 41 by suction means (not shown). Then, while rotating the chuck table 41 at, for example, 300 rpm, a polishing tool 43 provided with a polishing grindstone 42 in which abrasive grains such as zirconia oxide are dispersed in a flexible member such as felt and fixed with an appropriate bonding agent is rotated at, for example, 6000 rpm. By contacting the back surface 2b of the semiconductor wafer 2, the back surface 2b of the semiconductor wafer 2 is mirror-finished. In this back surface polishing step, the back surface 2b of the semiconductor wafer 2 which is a processed surface has a surface roughness (Ra) specified by JIS B0601 of 0.05 μm or less (Ra ≦ 0.05 μm), preferably 0.02 μm or less (Ra ≦ 0.02 μm).

  Next, a pulsed laser beam having transparency with respect to the semiconductor wafer 2 whose back surface is polished is irradiated from the back surface side of the semiconductor wafer 2 along the division line 21, and the division line 21 is formed inside the semiconductor wafer 2. A deteriorated layer forming step is performed in which the strength is decreased along the division line by forming the deteriorated layer along the line. This deteriorated layer forming step is performed using a laser processing apparatus 5 shown in FIGS. A laser processing apparatus 5 shown in FIGS. 4 to 6 includes a chuck table 51 that holds a workpiece, laser beam irradiation means 52 that irradiates the workpiece held on the chuck table 51 with a laser beam, and a chuck table 51. An image pickup means 53 for picking up an image of the workpiece held thereon is provided. The chuck table 51 is configured to suck and hold a workpiece, and can be moved in a machining feed direction indicated by an arrow X and an index feed direction indicated by an arrow Y in FIG. Yes.

  The laser beam irradiation means 52 includes a cylindrical casing 521 disposed substantially horizontally. In the casing 521, as shown in FIG. 5, a pulse laser beam oscillation means 522 and a transmission optical system 523 are arranged. The pulse laser beam oscillation means 522 is composed of a pulse laser beam oscillator 522a composed of a YAG laser oscillator or a YVO4 laser oscillator, and a repetition frequency setting means 522b attached thereto. The transmission optical system 523 includes an appropriate optical element such as a beam splitter. A condenser 524 containing a condenser lens (not shown) composed of a combination lens that may be in a known form is attached to the tip of the casing 521. The laser beam oscillated from the pulse laser beam oscillating means 522 reaches the condenser 524 through the transmission optical system 523, and a predetermined focused spot diameter is applied to the workpiece held on the chuck table 51 from the condenser 524. Irradiated with D. As shown in FIG. 6, the focused spot diameter D is D (μm) = 4 × λ × f / (π when a pulse laser beam having a Gaussian distribution is irradiated through the objective condenser lens 524 a of the condenser 524. × W), where λ is defined by the wavelength (μm) of the pulsed laser beam, W is the diameter (mm) of the pulsed laser beam incident on the objective lens 524a, and f is the focal length (mm) of the objective lens 524a.

  In the illustrated embodiment, the image pickup means 53 mounted on the tip of the casing 521 constituting the laser beam irradiation means 52 emits infrared rays to the workpiece in addition to a normal image pickup device (CCD) that picks up an image with visible light. Infrared illumination means for irradiating, an optical system for capturing infrared light emitted by the infrared illumination means, an image pickup device (infrared CCD) for outputting an electrical signal corresponding to the infrared light captured by the optical system, and the like Then, the captured image signal is sent to a control means (not shown).

The deteriorated layer forming step performed using the laser processing apparatus 5 described above will be described with reference to FIGS. 4, 7, and 8.
In this deteriorated layer forming step, first, the protective member 3 side of the semiconductor wafer 2 whose back surface 2b is polished is placed on the chuck table 51 of the laser processing apparatus 5 shown in FIG. The semiconductor wafer 2 is sucked and held on the chuck table 51 by suction means (not shown). The chuck table 51 that sucks and holds the semiconductor wafer 2 is positioned directly below the imaging means 53 by a moving mechanism (not shown).

  When the chuck table 51 is positioned immediately below the image pickup means 53, an alignment operation for detecting a processing region to be laser processed of the semiconductor wafer 2 is executed by the image pickup means 53 and a control means (not shown). That is, the image pickup means 53 and the control means (not shown) include the division line 21 formed in a predetermined direction of the semiconductor wafer 2, and the condenser 524 of the laser beam irradiation means 52 that irradiates the laser beam along the division line 21. Image processing such as pattern matching is performed to align the laser beam, and alignment of the laser beam irradiation position is performed. In addition, alignment of the laser beam irradiation position is similarly performed on the division line 21 formed on the semiconductor wafer 2 and extending at right angles to the predetermined direction. At this time, the surface 2a on which the division line 21 of the semiconductor wafer 2 is formed is located on the lower side, but the imaging unit 53 corresponds to the infrared illumination unit, the optical system for capturing infrared rays and the infrared ray as described above. Since the image pickup device is provided with an image pickup device (infrared CCD) or the like that outputs an electric signal, the division planned line 21 can be picked up through the back surface 2b.

  If the division line 21 formed on the semiconductor wafer 2 held on the chuck table 51 is detected as described above and alignment of the laser beam irradiation position is performed, it is shown in FIG. In this way, the chuck table 51 is moved to the laser beam irradiation region where the condenser 524 of the laser beam irradiation means 52 for irradiating the laser beam is located, and one end (the left end in FIG. 7A) of the predetermined division line 21 is irradiated with the laser beam Positioned just below the light collector 524 of the means 52. The chuck table 51, that is, the semiconductor wafer 2, is moved at a predetermined feed speed in the direction indicated by the arrow X1 in FIG. Then, as shown in FIG. 8B, when the irradiation position of the condenser 524 of the laser beam irradiation means 52 reaches the position of the other end of the division planned line 21, the irradiation of the pulse laser beam is stopped and the chuck table 51, that is, The movement of the semiconductor wafer 2 is stopped. In this deteriorated layer forming step, the condensing point P of the pulse laser beam is matched with the vicinity of the surface 2a (lower surface) of the semiconductor wafer 2, so that the deteriorated layer 210 is exposed to the surface 2a (lower surface) and from the surface 2a toward the inside. Is formed. This altered layer 210 is formed as a melt-resolidified layer. As described above, in the deteriorated layer forming step, the semiconductor wafer is irradiated with the pulse laser beam from the back surface side of the semiconductor wafer 2 along the planned dividing line 21, so that a test metal pattern or insulating film is laminated on the planned dividing line. However, the altered layer can be formed at a predetermined position without being affected by these.

The processing conditions in the deteriorated layer forming step are set as follows, for example.
Light source: LD excitation Q switch Nd: YVO4 laser Laser wavelength: 1064 nm pulse laser Pulse output: 10 μJ
Condensing spot diameter: φ1μm
Peak power density at the focal point: 3.2 × 10 ¹⁰ W / cm ²
Repetition frequency: 100 kHz
Processing feed rate: 100 mm / sec

  When the thickness of the semiconductor wafer 10 is large, the plurality of deteriorated layers 210 are formed by changing the condensing point P stepwise as shown in FIG. Form. For example, since the thickness of the deteriorated layer formed at one time is about 50 μm under the processing conditions described above, the deteriorated layer forming step 210 is performed, for example, three times to form the deteriorated layer 210 of 150 μm. Further, six altered layers may be formed on the wafer 2 having a thickness of 300 μm, and the altered layer may be formed in the semiconductor wafer 2 along the planned dividing line 21 from the front surface 2a to the rear surface 2b. . Further, the altered layer 210 may be formed only inside so as not to be exposed to the front surface 10a and the back surface 10b.

  Next, the adhesive film sticking process which sticks the adhesive film hardened | cured by irradiating an ultraviolet-ray to the back surface of the semiconductor wafer in which the deteriorated layer formation process mentioned above was implemented is implemented. That is, as shown in FIG. 9, the die bonding adhesive film 6 is cured by irradiating ultraviolet rays onto the back surface 2b of the semiconductor wafer 2 on which the altered layer 210 is formed along the planned dividing line in the altered layer forming step. Affix. At this time, the adhesive film 6 is pressed and adhered to the back surface 2b of the semiconductor wafer 2 while being heated at a temperature of 80 to 200 ° C. In the illustrated embodiment, the adhesive film 6 is formed of an acrylic resin mixed with an ultraviolet curing agent having a thickness of about 25 μm.

  If the adhesive film sticking process mentioned above is implemented, the wafer support process which sticks the adhesive film side of a semiconductor wafer to the dicing tape with which the cyclic | annular frame was mounted will be implemented. That is, as shown in FIG. 10, the adhesive film 6 side of the semiconductor wafer 2 is attached to the surface of a dicing tape 70 having an outer peripheral portion mounted so as to cover the inner opening of the annular frame 7. Then, the protective member 3 attached to the surface 2a of the semiconductor wafer 2 is peeled off. In the illustrated embodiment, the dicing tape 70 is formed of a sheet material made of polyvinyl chloride (PVC) having a thickness of 70 μm.

  If the wafer support process described above is performed, the adhesive film curing process in which the adhesive film 6 is cured by irradiating ultraviolet light from the dicing tape 70 side with the adhesive film 6 side of the semiconductor wafer 2 adhered to the dicing tape 70. To implement. This adhesive film hardening process is implemented using the tape expansion apparatus 8 shown in FIG.

  FIG. 11 is a perspective view of the tape expansion device 8. The tape expansion device 8 in the illustrated embodiment includes a frame holding means 81 for holding the annular frame 7 and a tension applying means 82 for expanding the dicing tape 70 attached to the annular frame 7. As shown in FIG. 11, the frame holding means 81 includes an annular frame holding member 811 and four clamp mechanisms 812 as fixing means disposed on the outer periphery of the frame holding member 811. An upper surface of the frame holding member 811 forms a placement surface 811a on which the annular frame 7 is placed, and the annular frame 7 is placed on the placement surface 811a. The annular frame 7 placed on the placement surface 811a of the frame holding member 811 is fixed to the frame holding member 811 by the clamp mechanism 812.

  The tension applying means 82 includes an expansion drum 821 disposed inside the annular frame holding member 811. The expansion drum 821 has an inner diameter and an outer diameter smaller than the inner diameter of the annular frame 7 and larger than the outer diameter of the semiconductor wafer 2 attached to the dicing tape 70 attached to the annular frame 7. The expansion drum 821 includes a support flange 822 at the lower end. The tension applying means 82 in the illustrated embodiment includes support means 83 that can advance and retract the annular frame holding member 811 in the vertical direction (axial direction). The support means 83 is composed of a plurality (four in the illustrated embodiment) of air cylinders 831 disposed on the support flange 822, and the piston rod 832 has a lower surface of the annular frame holding member 811. Connected to As described above, the support unit 83 including the plurality of air cylinders 831 has a predetermined amount from the reference position where the mounting surface 811a of the annular frame holding member 811 is substantially flush with the upper end of the expansion drum 821, and the upper end of the expansion drum 821. Move up and down between the lower extended positions.

  The illustrated tape expansion device 8 includes an ultraviolet irradiation lamp 84 disposed in the expansion drum 821. The ultraviolet irradiation lamp 84 irradiates the adhesive film 6 with ultraviolet rays through a dicing tape 70 mounted on the annular frame 7 held by the frame holding means 81.

  The adhesive film hardening process implemented using the tape expansion apparatus 8 comprised as mentioned above is demonstrated with reference to FIG. That is, as shown in FIG. 10, the annular frame 7 in which the semiconductor wafer 2 (the altered layer 210 is formed along the division line 21) is supported via the dicing tape 70 is replaced with the annular frame 7 shown in FIG. As shown in FIG. 5, the frame holding means 81 is mounted on the mounting surface 811a of the frame holding member 811 and fixed to the frame holding member 811 by the clamp mechanism 812. At this time, the frame holding member 811 is positioned at the reference position shown in FIG.

  Next, as shown in FIG. 12B, the ultraviolet irradiation lamp 84 is turned on. Ultraviolet rays emitted from the lit ultraviolet irradiation lamp 84 are applied to the adhesive film 6 through the dicing tape 70. Thus, when the adhesive film 6 is irradiated with ultraviolet rays, the adhesive film 6 is cured.

  If the adhesive film curing step is performed as described above, the tape expansion step of breaking the semiconductor wafer 2 and the adhesive film 6 along the scheduled division line 21 by expanding the dicing tape 70 is performed. This tape expansion process is performed from the state in which the adhesive film curing process is performed using the tape expansion device 8.

  That is, from the state shown in FIG. 12 (b), the plurality of air cylinders 831 as the support means 83 constituting the tension applying means 8 are operated to lower the annular frame holding member 811 to the extended position shown in FIG. Let me. Accordingly, since the annular frame 7 fixed on the mounting surface 811a of the frame holding member 81 is also lowered, the dicing tape 70 attached to the annular frame 7 is in contact with the upper end edge of the expansion drum 821 to be expanded. It is done. As a result, the tensile force acts radially on the adhesive film 6 and the semiconductor wafer 2 adhered to the dicing tape 70, so that the semiconductor wafer 2 is divided by the deteriorated layer 210 being reduced in strength. It is broken along the predetermined line 21 and divided into individual semiconductor chips 20. In this way, the semiconductor wafer 2 is broken along the planned division line 21 and divided into individual semiconductor chips 20, and at the same time, the adhesive film 6 is also broken along the planned division line 21. At this time, the adhesive film 6 is sticky in a normal state, and when the tension is applied, the adhesive film 6 is stretched and difficult to be surely broken. However, in the illustrated embodiment, the adhesive film 6 is cured and reduced in elasticity by performing the above-described adhesive film curing step, so that the adhesive film 6 can be reliably broken along the scheduled division line 21. . Although the semiconductor wafer 2 is divided into individual semiconductor chips 20, the semiconductor wafer 2 is stuck to the dicing tape 70 through the broken adhesive film 6, so that the form of the wafer is not separated. Maintained.

  In this manner, when the semiconductor wafer 2 and the adhesive film 6 attached to the back surface of the semiconductor wafer 2 are broken along the scheduled dividing line 21, the semiconductor chip is peeled off from the dicing tape 70 in the pick-up process. As shown in FIG. 14, the semiconductor chip 20 having the adhesive film 6 attached to the back surface can be picked up.

Next, a second embodiment of the semiconductor chip manufacturing method according to the present invention will be described.
In the second embodiment, the order of the wafer support process and the adhesive film curing process in the first embodiment described above is reversed.
That is, the second embodiment of the semiconductor chip manufacturing method performs the protective member attaching step, the back surface polishing step, the deteriorated layer forming step, and the adhesive film attaching step in the above-described first embodiment. As shown in FIG. 9, when the adhesive film 6 that is cured by irradiating ultraviolet rays to the back surface 2 b of the semiconductor wafer 2 on which the altered layer 210 is formed along the planned dividing line 21, the ultraviolet rays are applied to the adhesive film 6. The adhesive film curing step is performed in which the adhesive film 6 is cured by irradiation. This adhesive film hardening process is implemented using the ultraviolet irradiation device 9 shown in FIG. An ultraviolet irradiator 9 shown in FIG. 15 includes a housing 91 having an opening 912 in an upper wall 911 and an ultraviolet irradiation lamp 92 disposed in the housing 91. The adhesive film 6 side of the conductor wafer 2 is placed on the upper wall 911 of the ultraviolet irradiator 9 configured as described above. Then, the ultraviolet irradiation lamp 92 is turned on to irradiate the adhesive film 6 with ultraviolet rays. As a result, the adhesive film 6 is cured. Thus, if the adhesive film hardening process is implemented, the wafer support process and tape expansion process in 1st Embodiment mentioned above will be implemented.

Next, a third embodiment of the semiconductor chip manufacturing method according to the present invention will be described.
The third embodiment is an example using a so-called dicing tape with an adhesive film, in which an adhesive film is attached to a dicing tape attached to an annular frame that supports the semiconductor wafer on which the above-described deteriorated layer forming step has been performed. is there. That is, as shown in FIG. 16A, the adhesive film 60 is adhered to the surface of the dicing tape 70 mounted on the annular frame 7. Similar to the adhesive film 6, the adhesive film 60 is also formed of an acrylic resin that cures when irradiated with ultraviolet rays.

  The third embodiment of the method for manufacturing a semiconductor chip according to the present invention is performed along the planned division line 21 by performing the protective member attaching step, the back surface polishing step, and the deteriorated layer forming step in the first embodiment described above. The back surface 2b of the semiconductor wafer 2 on which the altered layer 210 is formed is adhered to the surface of the adhesive film 60 disposed on the dicing tape 70 mounted on the annular frame 7 as shown in FIG. . Then, as shown in FIG. 16A, the protective member 3 adhered to the surface 2a of the semiconductor wafer 2 is peeled off. Thus, 3rd Embodiment can implement an adhesive film and a wafer support process simultaneously by using a dicing tape with an adhesive film. If the wafer support process is performed as described above, the adhesive film curing process, the wafer support process, and the tape expansion process in the first embodiment described above are performed.

The perspective view of the semiconductor wafer divided | segmented into each semiconductor chip by the manufacturing method of the semiconductor chip by this invention. The perspective view which shows the state which affixed the protection member on the surface of the semiconductor wafer shown in FIG. Explanatory drawing of the back surface grinding | polishing process in the manufacturing method of the semiconductor chip by this invention. The principal part perspective view of the laser processing apparatus which implements the deteriorated layer formation process in the manufacturing method of the semiconductor chip by this invention. The block diagram which shows simply the structure of the laser beam irradiation means with which the laser processing apparatus shown in FIG. 4 is equipped. The simplification figure for demonstrating the condensing spot diameter of a pulse laser beam. Explanatory drawing of the deteriorated layer formation process in the manufacturing method of the semiconductor chip by this invention. FIG. 8 is an explanatory diagram showing a state in which a deteriorated layer is formed inside the semiconductor wafer in the deteriorated layer forming step shown in FIG. 7. Explanatory drawing of the adhesive film sticking process in the manufacturing method of the semiconductor chip by this invention. Explanatory drawing of the wafer support process in the manufacturing method of the semiconductor chip by this invention. The perspective view of the tape expansion apparatus which implements the adhesive film hardening process and tape expansion process in the manufacturing method of the semiconductor chip by this invention. Explanatory drawing of the adhesive film hardening process in the manufacturing method of the semiconductor chip by this invention. Explanatory drawing of the tape expansion process in the manufacturing method of the semiconductor chip by this invention. The perspective view of the semiconductor chip manufactured by the manufacturing method of the semiconductor chip by this invention. Explanatory drawing which shows other embodiment of the adhesive film hardening process in the manufacturing method of the semiconductor chip by this invention. Explanatory drawing which shows other embodiment of the adhesive film in the manufacturing method of the semiconductor chip by this invention, and a wafer support process.

Explanation of symbols

2: Semiconductor wafer 20: Semiconductor chip 21: Planned division line 22: Circuit 210: Altered layer 3: Protection member 4: Polishing device 41: Chuck table of polishing device 43: Polishing tool 5: Laser processing device 51: Laser processing device Chuck table 51: Laser beam irradiation means 53: Imaging means 6: Adhesive film 60: Adhesive film 7: Ring frame 70: Dicing tape 8: Tape expansion device 81: Frame holding means 811: Frame holding member 812: Clamp mechanism 82: Tension Application means 821: Expansion drum 83: Support means 831: Air cylinder 84: Ultraviolet irradiation lamp 9: Ultraviolet irradiation device

Claims (3)

A semiconductor wafer in which a plurality of scheduled division lines are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scheduled division lines is divided into individual semiconductor chips along the planned division lines. A method of manufacturing a semiconductor chip divided into
A deteriorated layer forming step of irradiating a laser beam having transparency to the semiconductor wafer from the back surface side of the semiconductor wafer along the planned dividing line, and forming a deteriorated layer along the planned dividing line inside the wafer. When,
An adhesive film sticking step of sticking an adhesive film that is cured by irradiating ultraviolet rays on the back surface of the semiconductor wafer on which the deteriorated layer forming step has been performed;
A wafer supporting step of adhering the adhesive film side of the semiconductor wafer on which the adhesive film adhering step has been performed to a dicing tape attached to an annular frame;
An adhesive film curing step in which the wafer supporting step is performed and the adhesive film side of the semiconductor wafer is adhered to the dicing tape, and the adhesive film is cured by irradiating ultraviolet rays from the dicing tape side;
A tape expansion step of breaking the semiconductor wafer and the adhesive film along the predetermined dividing line by expanding the dicing tape after the adhesive film curing step is performed.
A method of manufacturing a semiconductor chip. A semiconductor wafer in which a plurality of scheduled division lines are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scheduled division lines is divided into individual semiconductor chips along the planned division lines. A method of manufacturing a semiconductor chip divided into
A deteriorated layer forming step of irradiating a laser beam having transparency to the semiconductor wafer from the back surface side of the semiconductor wafer along the planned dividing line, and forming a deteriorated layer along the planned dividing line inside the wafer. When,
An adhesive film sticking step of sticking an adhesive film that is cured by irradiating ultraviolet rays on the back surface of the semiconductor wafer on which the deteriorated layer forming step has been performed;
An adhesive film curing step of curing the adhesive film by irradiating the adhesive film adhered to the back surface of the semiconductor wafer with ultraviolet rays;
After the adhesive film curing step is performed, a wafer support step of sticking the adhesive film side of the semiconductor wafer to a dicing tape attached to an annular frame;
A tape expansion step of breaking the semiconductor wafer and the adhesive film along the predetermined dividing line by expanding the dicing tape after the wafer support step is performed.
A method of manufacturing a semiconductor chip. A semiconductor wafer in which a plurality of scheduled division lines are formed in a lattice shape on the surface and a circuit is formed in a plurality of regions partitioned by the plurality of scheduled division lines is divided into individual semiconductor chips along the planned division lines. A method of manufacturing a semiconductor chip divided into
A deteriorated layer forming step of irradiating a laser beam having transparency to the semiconductor wafer from the back side of the semiconductor wafer along the division line and forming a deteriorated layer along the division line inside the wafer. When,
A wafer support step in which the rear surface of the semiconductor wafer subjected to the altered layer forming step is attached to an adhesive film that is disposed on a dicing tape attached to an annular frame and cured by irradiating ultraviolet rays;
An adhesive film curing step in which the wafer support step is performed and the adhesive film disposed on the dicing tape is bonded to the semiconductor wafer to irradiate ultraviolet rays from the dicing tape side to cure the adhesive film. When,
A tape expansion step of breaking the semiconductor wafer and the adhesive film along the predetermined dividing line by expanding the dicing tape after the adhesive film curing step is performed.
A method of manufacturing a semiconductor chip.

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