JP2006032459A - Chemical vapor phase growing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a chemical vapor phase growing device in which a structure of a reaction chamber is simplified and which is superior in maintenance property. <P>SOLUTION: As for a lower plate 2 for supporting substrates 1, the main faces are arranged to become almost parallel. A rotation shaft 3 rotates the lower plate 2 in an almost horizontal plane. Supply ports 17 for supplying a plurality of types of reactant gases into the reaction chamber are arranged on sides of the reaction chamber. An exhaust port 18 for exhausting the reactant gas outside the reaction chamber is disposed to be confront with an almost center of the lower plate 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a chemical vapor deposition apparatus in which a thin film is formed on a surface of a substrate disposed in a reaction chamber by reaction of a reaction gas, and in particular, a plurality of substrates can be disposed in a reaction chamber. The present invention relates to a chemical vapor deposition apparatus configured to be rotatable substantially in a horizontal plane.

  2. Description of the Related Art Conventionally, in the manufacture of semiconductor devices, there is a CVD apparatus that performs chemical vapor deposition (CVD) for forming a thin film on a substrate surface such as a semiconductor substrate by a chemical reaction between reaction gases heated to a high temperature. It's being used. FIG. 3 shows a cross-sectional view of a conventional CVD apparatus. This CVD apparatus is mainly used for film formation of silicon carbide (SiC) or the like. The configuration in the figure will be described below.

  The substrate 1 is a substrate such as a semiconductor substrate on which a thin film is formed. The lower plate 2 is a support plate that supports the plurality of substrates 1, and the main surface of the lower plate 2 that supports the substrates 1 is substantially parallel to the horizontal plane. The lower plate 2 disposed on the lower surface side has a thin disk shape and includes a rotation mechanism that rotates the substrate 1 on the lower plate 2. Further, the lower plate 2 is rotated in a substantially horizontal plane by a rotating shaft 3 that is a revolving mechanism around a rotating shaft 100 perpendicular to the main surface. In order to improve the uniformity of the thin film formed on the surface of the substrate 1, a planetary mechanism for rotating and revolving the substrate 1 is provided as described above. The material of the lower plate 2 and the upper plate 4 provided on the upper surface side so as to face the lower plate 2 is, for example, graphite whose surface is coated with SiC.

The heating means 5 heats the lower plate 2 and the upper plate 4. The heating means 5 is, for example, a high-frequency coil. A high-frequency magnetic field is generated by applying a high-frequency voltage to the high-frequency coil, and the lower plate 2 and the upper plate 4 are made of reactive gas by receiving induction heating by the high-frequency magnetic field. It is heated to a reaction temperature (for example, about 1500 ° C to 1800 ° C). A space surrounded by the cover 6 in the housing is a reaction chamber, to which a reaction gas is supplied and film formation is performed. A plurality of reaction gases (H ₂ , SiH ₄ , C ₃ H ₈ ) are supplied into the reaction chamber from a supply port 7 provided at the center of the upper surface of the cover 6, and exhaust gas provided on the side surface (side wall) of the cover 6. It is discharged out of the reaction chamber from the outlet 8.

The supply port 7 is provided for each type of reaction gas, and is connected to a supply nozzle for supplying each reaction gas. That is, a plurality of supply ports 7 are provided corresponding to a plurality of reaction gases to be supplied. The discharge port 8 is connected to a discharge nozzle that discharges the reaction gas. The cooling water 9 is circulated in the reaction chamber by a cooling water pipe and a pump (not shown) to cool the supply gas supplied through the supply port 7. In particular, the cooling water 9 has a function of keeping SiH ₄ below its decomposition temperature. Further, the lower plate 2 is provided so as to be movable up and down, and an opening (not shown) is provided on the side surface of the reaction chamber. It can be carried into the reaction chamber and can be carried out from the reaction chamber to the outside of the reaction chamber.

Patent Document 1 describes a film forming apparatus in which a raw material gas is introduced into a reaction vessel and heated, and a pair of substrates provided so as to face each other is rotated to make the film thickness uniform. Has been. Patent Document 2 describes a vapor phase growth apparatus in which film formation is made uniform by suppressing convection of a source gas. Patent Document 3 describes a film forming apparatus provided with a planetary mechanism.
JP 2003-166059 A JP 2003-328136 A JP 2002-175990 A

  However, in the CVD apparatus shown in FIG. 3, a plurality of supply nozzles for each reaction gas and piping for cooling water are provided in a narrow space at the center of the upper surface of the reaction chamber. A mechanism for holding the upper plate 4 is also provided on the upper surface side of the reaction chamber. For this reason, the conventional CVD apparatus has a problem in that the structure of the central portion of the upper surface of the reaction chamber becomes very complicated, and the maintainability is poor.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide a chemical vapor deposition apparatus that simplifies the structure of a reaction chamber and is excellent in maintainability.

  The present invention has been made to solve the above problems, and the invention according to claim 1 has a reaction chamber in a casing, and the reaction chamber is reacted by a reaction of a reaction gas supplied into the reaction chamber. In the chemical vapor deposition apparatus for forming a thin film on the surface of the substrate disposed on the main surface, the main surface is disposed so as to be substantially parallel to a horizontal plane, and a supporting plate for supporting the plurality of substrates on the main surface; A rotating means for rotating the support plate around a rotation axis perpendicular to the surface; a supply port provided on a side surface of the reaction chamber for supplying a plurality of types of the reaction gases into the reaction chamber; A chemical vapor deposition apparatus provided with a discharge port provided to face the center and for discharging the reaction gas to the outside of the reaction chamber.

  According to a second aspect of the present invention, in the chemical vapor deposition apparatus according to the first aspect, the reaction gas supplied to the reaction chamber is a mixed gas in which a plurality of types of reaction gases are mixed in advance. Features.

  According to a third aspect of the present invention, in the chemical vapor deposition apparatus according to the first or second aspect of the present invention, the support plate has an upper surface of the reaction chamber with the main surface supporting the plurality of substrates facing downward. The discharge port is provided on the lower surface side of the reaction chamber.

  According to a fourth aspect of the present invention, in the chemical vapor deposition apparatus according to any one of the first to third aspects, the support plate is provided so as to be movable up and down, and on the side surface of the reaction chamber, An opening is provided that allows the substrate to be carried into the reaction chamber from outside the reaction chamber and allows the substrate to be carried out from the reaction chamber to the outside of the reaction chamber.

  According to a fifth aspect of the present invention, in the chemical vapor deposition apparatus according to any one of the first to fourth aspects, the reaction gas supplied into the reaction chamber via the supply port is cooled. A water cooling mechanism for circulating the cooling water is further provided.

  According to the present invention, the supply port for supplying a plurality of reaction gases into the reaction chamber is provided on the side surface of the reaction chamber, and the discharge port for discharging the reaction gas to the outside of the reaction chamber is opposed to the substantially center of the support plate that supports the substrate. Thus, the structure of the reaction chamber can be simplified and the effect of improving the maintainability can be obtained.

  The best mode for carrying out the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a CVD apparatus according to the first embodiment of the present invention. The same code | symbol is provided to the structure similar to FIG. In this CVD apparatus, the lower plate 2 is provided in the same manner as in the prior art, and is disposed on the lower surface side of the reaction chamber so that the main surface supporting the plurality of substrates 1 faces upward and the main surface is substantially parallel to the horizontal plane. ing. Further, in this CVD apparatus, the substrate 1 is rotated on the lower plate 2 by the rotation mechanism, and the lower plate 2 supporting the substrate 1 is centered on the rotation axis 100 perpendicular to the main surface of the lower plate 2 by the rotation shaft 3. It has a planetary mechanism that rotates in a substantially horizontal plane.

A reaction gas supply port 17 is provided on a side surface (side wall) of the reaction chamber, and a plurality of reaction gases (H ₂ , SiH ₄ , C ₃ H ₈ ) are supplied to the reaction chamber through the supply port 17. Further, a discharge port 18 is provided so as to face the center of the lower plate 2, and the reaction gas is discharged out of the reaction chamber through the discharge port 18. The supply ports 17 may be provided individually for each type of reaction gas, and a plurality of supply ports 17 may be arranged on the side wall of the reaction chamber, for example, at equal intervals. Alternatively, a plurality of reaction gases may be mixed in advance outside the reaction chamber to form a mixed gas, and one or a plurality of supply ports 17 for supplying the mixed gas may be provided on the side wall of the reaction chamber.

  The cooling water 19 is circulated on the side surface of the reaction chamber by a cooling water pipe and a pump (not shown). Further, the lower plate 2 is provided so as to be movable up and down, and an opening (not shown) is provided on the side surface of the reaction chamber. Through the opening, the substrate 1 is moved from the outside of the reaction chamber by, for example, a load lock mechanism. It can be carried into the reaction chamber and can be carried out from the reaction chamber to the outside of the reaction chamber. The cooling water 19 is provided avoiding this opening.

  According to this embodiment, the supply port 17 for supplying a plurality of types of reaction gas into the reaction chamber is provided on the side surface of the reaction chamber in the housing, and the discharge port 18 for discharging the reaction gas to the outside of the reaction chamber is provided on the lower plate 2. By providing it on the upper surface side of the reaction chamber so as to face the center, the structure of the reaction chamber is simplified, and it is difficult to break down and has excellent maintainability. In addition, when a plurality of reaction gases are mixed in advance outside the reaction chamber and then supplied into the reaction chamber via the supply port 17, the structure of the piping can be simplified.

  Next, a second embodiment of the present invention will be described. FIG. 2 is a sectional view of the CVD apparatus according to the present embodiment. The same code | symbol is provided to the structure similar to FIG. In this CVD apparatus, a plurality of substrates 1 are mounted on the upper plate 4. The upper plate 4 is disposed on the upper surface side of the reaction chamber with the main surface supporting the substrate 1 facing downward. A rotating shaft 3 is connected to the upper plate 4 and is configured such that the upper plate 4 is rotated in a substantially horizontal plane by the rotating shaft 3 around a rotating shaft 100 perpendicular to the main surface. Further, a discharge port 18 is provided on the lower surface side of the reaction chamber so as to face substantially the center of the upper plate 4. In order to attach / detach the substrate 1 to / from the upper plate 4, for example, the pressure in the reaction chamber is set to atmospheric pressure, and the upper chamber 4 is moved upward together with the upper cover 6 to open the reaction chamber.

  According to the present embodiment, as in the first embodiment, the structure of the reaction chamber can be simplified and the maintainability is improved. Further, since the source gas having a high temperature is likely to rise, the upper plate 4 supports the substrate 1 so that the main surface of the substrate 1 on which the thin film is formed faces downward, thereby increasing the film formation speed due to the convection effect. This makes it easier to prevent the raw material from wrapping around the back surface of the substrate.

  As described above, the embodiments of the present invention have been described in detail with reference to the drawings, but the specific configuration is not limited to these embodiments, and includes design changes and the like within a scope not departing from the gist of the present invention. It is.

It is sectional drawing of the CVD apparatus by the 1st Embodiment of this invention. It is sectional drawing of the CVD apparatus by the 2nd Embodiment of this invention. It is sectional drawing of the conventional CVD apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 2 ... Lower plate, 3 ... Rotating shaft, 4 ... Upper plate, 5 ... Heating means, 6 ... Cover, 7, 17 ... Supply port, 8 , 18 ... discharge port, 9, 19 ... cooling water.

Claims (5)

In a chemical vapor deposition apparatus that has a reaction chamber in a housing and forms a thin film on the surface of a substrate disposed in the reaction chamber by a reaction of a reaction gas supplied into the reaction chamber,
A main plate disposed so as to be substantially parallel to a horizontal plane, and a support plate for supporting the plurality of substrates on the main surface;
Rotating means for rotating the support plate around a rotation axis perpendicular to the main surface;
A supply port that is provided on a side surface of the reaction chamber and supplies a plurality of types of the reaction gases into the reaction chamber;
A discharge port that is provided so as to face substantially the center of the support plate, and discharges the reaction gas to the outside of the reaction chamber;
A chemical vapor deposition apparatus characterized by comprising:   The chemical vapor deposition apparatus according to claim 1, wherein the reaction gas supplied to the reaction chamber is a mixed gas in which a plurality of types of reaction gases are mixed in advance. The support plate is disposed on the upper surface side of the reaction chamber, with the main surface supporting the plurality of substrates facing downward.
The chemical vapor deposition apparatus according to claim 1, wherein the discharge port is provided on a lower surface side of the reaction chamber. The support plate is provided to be movable up and down,
The side surface of the reaction chamber is provided with an opening that allows the substrate to be carried into the reaction chamber from the outside of the reaction chamber and allows the substrate to be carried out of the reaction chamber to the outside of the reaction chamber. The chemical vapor deposition apparatus according to any one of claims 1 to 3. 5. The water cooling mechanism according to claim 1, further comprising a water cooling mechanism for circulating cooling water for cooling the reaction gas supplied into the reaction chamber through the supply port. Chemical vapor deposition equipment.

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