JP2005337866A - Magnetic substance detector and semiconductor package - Google Patents

Magnetic substance detector and semiconductor package Download PDF

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JP2005337866A
JP2005337866A JP2004156680A JP2004156680A JP2005337866A JP 2005337866 A JP2005337866 A JP 2005337866A JP 2004156680 A JP2004156680 A JP 2004156680A JP 2004156680 A JP2004156680 A JP 2004156680A JP 2005337866 A JP2005337866 A JP 2005337866A
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magnetic
magnet
sensitive part
semiconductor package
detector
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Kazuhiro Nishimura
和浩 西村
Ichiro Shibazaki
一郎 柴崎
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Asahi Kasei Corp
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Asahi Kasei Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a magnetic substance detector which can take out a large amplitude of an output signal. <P>SOLUTION: The magnetic substance detector comprises a semiconductor magneto-resistance element forming the magneto-sensitive part 90 and the magnet 10 arranged behind the magneto-sensitive part. Herein, the surface 91 of the magneto-sensitive part and the surface 10a of the magnet are arranged parallel to each other, and the surface 91 of the magneto-sensitive part is arranged in the area of the surface 10a of the magnet, moreover the distance A between the surface 91 of the magneto-sensitive part and the surface 10a of the magnet is characteristically set to 0<A≤1mm. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、感磁部（磁気検出部）を形成する半導体磁気抵抗素子を備えた磁性体検出器及び半導体パッケージに関する。   The present invention relates to a magnetic detector and a semiconductor package provided with a semiconductor magnetoresistive element forming a magnetic sensing part (magnetic detection part).

図２９に示す磁性体検出器１００は、感磁部を形成する半導体磁気抵抗素子を備えたチップを樹脂封止した半導体パッケージ１０１の下面（裏面）１０２に接着剤で磁石１０３が取り付けられ、これらがケース１０４内に樹脂１０５で封止されている。１０６はリードフレームである（例えば、特許文献１参照）。
特開２００４−５５９３２号公報 A magnetic detector 100 shown in FIG. 29 has a magnet 103 attached with an adhesive to a lower surface (back surface) 102 of a semiconductor package 101 in which a chip having a semiconductor magnetoresistive element forming a magnetic sensing portion is sealed. Is sealed in the case 104 with a resin 105. Reference numeral 106 denotes a lead frame (see, for example, Patent Document 1).
JP 2004-55932 A

半導体磁気抵抗素子は、抵抗値が印加磁界によって変化する素子である。半導体磁気抵抗素子の磁気抵抗効果は以下の式で記述できる。
ΔＲ／Ｒ０∝（μＢ）２ ：低印加磁界時・・・・・（１）
ΔＲ／Ｒ０∝（μＢ） ：高印加磁界時・・・・・（２）
ただし、ΔＲ＝ＲＢ−Ｒ０であり、ＲＢは磁界中での抵抗値、Ｒ０は磁場なしでの抵抗値である。μは電子移動度である、Ｂは印加磁界である。磁気抵抗変化率（ΔＲ／Ｒ０）と印加磁界の関係は、１次比例関係にはなく、低磁界では２次曲線となり、高磁界では１次曲線となる。ただ、１次曲線から２次曲線への移行は、徐々に移行するものである（次数が２から１へとデジタル的に移行するのではなく、徐々に２から１へと移行していく（図３０参照））。
磁性体検出器は、検出対象磁性体としての例えば歯車が回転したり検出対象磁性体が移動したりすることにより磁束密度の変化を検出するものであるので、半導体磁気抵抗素子からの出力信号振幅は、磁気抵抗変化率（ΔＲ／Ｒ０）の傾きによる。即ち、永久磁石による半導体磁気抵抗素子の感磁部表面での磁束密度（バイアス磁界）が大きいほど、磁気抵抗変化率の傾きが大きく、出力信号振幅は大きくなる。
図２９の磁性体検出器１００の感磁部表面と磁石表面との間の距離の詳細を図３１に示す。即ち、図２９のように半導体パッケージ１０１の下面１０２に磁石１０３が密着されている構造でも、図３１に示すようにチップ１１０をマウント（ダイボンド）しているリードフレーム１０６の下部の樹脂１１１の厚さＨが厚い場合には、半導体磁気抵抗素子の感磁部表面１１２とこの感磁部表面１１２と平行に対向する磁極面である磁石表面１１３との間の距離Ａ（以下、「縦距離」という）が大きくなって、感磁部表面１１２での磁束密度が小さくなり、出力信号振幅の低下につながることになる。 A semiconductor magnetoresistive element is an element whose resistance value changes with an applied magnetic field. The magnetoresistive effect of the semiconductor magnetoresistive element can be described by the following equation.
ΔR / R 0 ∝ (μB) 2 : At low applied magnetic field (1)
ΔR / R 0 ∝ (μB): At high applied magnetic field (2)
However, a ΔR = R B -R 0, R B is the resistance in the magnetic field, R 0 is the resistance with no magnetic field. μ is the electron mobility, and B is the applied magnetic field. The relationship between the rate of change in magnetoresistance (ΔR / R 0 ) and the applied magnetic field is not a linear proportional relationship, but is a quadratic curve in a low magnetic field and a primary curve in a high magnetic field. However, the transition from the primary curve to the quadratic curve is a gradual transition (the order is not a digital transition from 2 to 1, but a gradual transition from 2 to 1 ( See FIG. 30)).
The magnetic body detector detects a change in magnetic flux density by, for example, rotating a gear as the magnetic body to be detected or moving the magnetic body to be detected, so that the amplitude of the output signal from the semiconductor magnetoresistive element Is due to the slope of the magnetoresistance change rate (ΔR / R 0 ). That is, as the magnetic flux density (bias magnetic field) on the surface of the magnetic sensitive part of the semiconductor magnetoresistive element by the permanent magnet is larger, the gradient of the magnetoresistive change rate is larger and the output signal amplitude is larger.
FIG. 31 shows details of the distance between the surface of the magnetic sensing part of the magnetic detector 100 of FIG. 29 and the surface of the magnet. That is, even if the magnet 103 is in close contact with the lower surface 102 of the semiconductor package 101 as shown in FIG. 29, the thickness of the resin 111 below the lead frame 106 on which the chip 110 is mounted (die-bonded) as shown in FIG. When the thickness H is thick, the distance A (hereinafter referred to as “longitudinal distance”) between the magnetic sensing surface 112 of the semiconductor magnetoresistive element and the magnet surface 113 that is a magnetic pole face facing the magnetic sensing surface 112 in parallel. Increases), the magnetic flux density on the surface of the magnetic sensing part 112 decreases, leading to a decrease in output signal amplitude.

本発明は、出力信号振幅を大きくとれる磁性体検出器を提供する。また、縦距離Ａ、即ち、半導体磁気抵抗素子の感磁部表面と磁石表面との距離を小さくできて、出力信号振幅を大きくとれる磁性体検出器を提供する。また、この磁性体検出器を構成するための半導体パッケージを提供する。   The present invention provides a magnetic detector capable of increasing the output signal amplitude. In addition, there is provided a magnetic substance detector capable of reducing the longitudinal distance A, that is, the distance between the surface of the magnetic sensing portion of the semiconductor magnetoresistive element and the surface of the magnet and increasing the output signal amplitude. In addition, a semiconductor package for constituting the magnetic substance detector is provided.

本発明は、感磁部を形成する半導体磁気抵抗素子と、前記感磁部の裏側に配置された磁石とを備え、感磁部表面と磁石表面とが互いに平行に配置された磁性体検出器において、前記感磁部表面が前記磁石表面の面領域内上に配置され、かつ、前記感磁部表面と前記磁石表面との間の距離Ａが０<Ａ≦１ｍｍに設定されたことを特徴とする。また、感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージと、該半導体パッケージの裏側に配置された磁石とを備え、感磁部表面と該感磁部表面に対向する磁石表面とが互いに平行に配置された磁性体検出器において、前記感磁部表面が前記磁石表面の面領域内上に配置され、かつ、前記感磁部表面と前記磁石表面との間の距離Ａが０<Ａ≦１ｍｍに設定されたことを特徴とする。また、感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージと、該半導体パッケージの裏側に配置された磁石とを備え、感磁部表面と該感磁部表面に対向する磁石表面とが互いに平行に配置された磁性体検出器において、前記半導体パッケージが裏側に前記感磁部の下に位置する構成部分の除去された裏面を備え、該裏面と前記磁石表面とが互いに接触されて、前記感磁部表面が磁石表面の面領域内上に配置され、かつ、前記感磁部表面と前記磁石表面との間の距離Ａが０<Ａ≦１ｍｍに設定されたことを特徴とする。また、前記感磁部の下に位置する構成部分の除去された裏面が、凹部孔の底面により形成され、前記凹部孔内に磁石表面側が挿入されて前記磁石が位置決めされたことや、研磨された平坦面により形成されたことを特徴とする。また、前記チップがリードフレーム上にダイボンドされ、前記リードフレームが前記チップの感磁部表面とは反対方向に折曲されて外部接続リードとして形成されたことや、前記チップがリードフレーム上にダイボンドされ、前記半導体パッケージの裏面に露出させた前記リードフレームと当該リードフレームとは別体の外部接続リードとがプリント配線基板を介して電気的に接続され、前記プリント配線基板が前記磁石表面を前記半導体パッケージの裏面に密着させるための貫通孔を備えたことを特徴とする。また、前記半導体パッケージと前記磁石とホルダとで形成された磁気検出体がケース内に樹脂で封止され、前記ホルダが磁石保持孔と外部接続リード保持孔とを備え、前記磁石が磁石保持孔に挿入され、前記外部接続リードが前記外部接続リード保持孔に挿入されて、前記磁石と前記外部接続リードとが前記ホルダにより保持された状態で前記磁気検出体が封止されたことを特徴とする。また、前記感磁部表面と対向する前記ケースの表面が金属板により形成され、当該金属板の厚さが０．５ｍｍ以下に設定されたことを特徴とする。また、前記感磁部表面の面中心と前記磁石表面の面中心とを一致させたことを特徴とする。また、前記感磁部表面における磁束密度を、磁気抵抗効果により感磁部の抵抗値が５０％以上増加する磁束密度としたことを特徴とする。また、前記磁石がＳｍＣｏにより形成された永久磁石であることを特徴とする。また、前記半導体磁気抵抗素子が化合物半導体薄膜により形成され、当該化合物半導体薄膜にはドナー不純物がドープして有ることを特徴とする。また、前記ドナー不純物がＳｉ、Ｓｎ、Ｓ、Ｓｅ、Ｔｅ、Ｇｅ、Ｃであることを特徴とする。また、前記化合物半導体薄膜は結晶粒界を有しない単結晶ＩｎＳｂ薄膜であることを特徴とする。また、前記単結晶ＩｎＳｂ薄膜の厚さが０．１〜４．０μｍであることを特徴とする。
また、本発明は、感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージにおいて、感磁部表面に垂直磁界を加える磁石が配置される裏側に前記感磁部の下に位置する構成部分の除去された裏面を備えたことを特徴とする。また、前記半導体パッケージにおいて、前記感磁部の下に位置する構成部分の除去された裏面が、凹部孔の底面により形成されたことや、研磨された平坦面により形成されたことを特徴とする。また、感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージにおいて、チップをダイボンドしたリードフレームを、感磁部表面に垂直磁界を加える磁石の配置される裏面に露出させたことを特徴とする。 The present invention provides a magnetic detector comprising a semiconductor magnetoresistive element forming a magnetic sensitive part and a magnet arranged on the back side of the magnetic sensitive part, wherein the magnetic sensitive part surface and the magnet surface are arranged in parallel to each other. In the above, the surface of the magnetically sensitive part is disposed within the surface area of the surface of the magnet, and the distance A between the surface of the magnetically sensitive part and the magnet surface is set to 0 <A ≦ 1 mm. And Also provided is a semiconductor package in which a chip including a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with a resin, and a magnet disposed on the back side of the semiconductor package, the magnetic sensitive part surface and the magnetic sensitive part In the magnetic detector in which the magnet surfaces opposed to the surface are arranged in parallel to each other, the magnetic sensitive part surface is arranged in a surface area of the magnet surface, and the magnetic sensitive part surface and the magnet surface The distance A is set to 0 <A ≦ 1 mm. Also provided is a semiconductor package in which a chip including a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with a resin, and a magnet disposed on the back side of the semiconductor package, the magnetic sensitive part surface and the magnetic sensitive part In the magnetic detector in which the magnet surfaces opposed to the front surface are arranged in parallel to each other, the semiconductor package includes a back surface from which a constituent part located below the magnetic sensing portion is removed on the back side, and the back surface and the magnet The surface is in contact with each other, the surface of the magnetic sensitive part is arranged in the surface area of the magnet surface, and the distance A between the surface of the magnetic sensitive part and the magnet surface is set to 0 <A ≦ 1 mm It is characterized by that. Further, the back surface from which the component located under the magnetic sensing portion is removed is formed by the bottom surface of the recess hole, and the magnet surface side is inserted into the recess hole so that the magnet is positioned or polished. It is characterized by being formed by a flat surface. Further, the chip is die-bonded on a lead frame, the lead frame is bent in a direction opposite to the surface of the magnetically sensitive portion of the chip and formed as an external connection lead, or the chip is die-bonded on the lead frame. The lead frame exposed on the back surface of the semiconductor package and the external connection lead separate from the lead frame are electrically connected via a printed wiring board, and the printed wiring board connects the magnet surface to the magnet surface. It has a feature that a through-hole is provided to be in close contact with the back surface of the semiconductor package. Further, a magnetic detector formed of the semiconductor package, the magnet, and the holder is sealed with resin in a case, the holder includes a magnet holding hole and an external connection lead holding hole, and the magnet is a magnet holding hole. The magnetic detector is sealed in a state where the external connection lead is inserted into the external connection lead holding hole and the magnet and the external connection lead are held by the holder. To do. Further, the surface of the case facing the surface of the magnetic sensitive part is formed of a metal plate, and the thickness of the metal plate is set to 0.5 mm or less. Further, the surface center of the surface of the magnetic sensing part and the surface center of the surface of the magnet are matched. Further, the magnetic flux density on the surface of the magnetic sensitive part is a magnetic flux density at which the resistance value of the magnetic sensitive part is increased by 50% or more due to the magnetoresistive effect. Further, the magnet is a permanent magnet made of SmCo. The semiconductor magnetoresistive element is formed of a compound semiconductor thin film, and the compound semiconductor thin film is doped with a donor impurity. The donor impurity may be Si, Sn, S, Se, Te, Ge, C. The compound semiconductor thin film is a single crystal InSb thin film having no crystal grain boundary. The single crystal InSb thin film has a thickness of 0.1 to 4.0 μm.
According to the present invention, in a semiconductor package in which a chip having a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with a resin, the magnetic sensitive element is arranged on the back side where a magnet for applying a vertical magnetic field is disposed on the surface of the magnetic sensitive part. It is characterized by having a back surface from which a component part located under the part is removed. Further, in the semiconductor package, the back surface from which the constituent portion located under the magnetic sensing portion is removed is formed by the bottom surface of the recess hole, or is formed by a polished flat surface. . In addition, in a semiconductor package in which a chip having a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with a resin, a lead frame die-bonded to the chip is placed on the back side where a magnet for applying a vertical magnetic field to the magnetic sensitive part surface is arranged It is characterized by being exposed to.

本発明によれば、感磁部表面が磁石表面の面領域内上に配置され、かつ、感磁部表面と磁石表面との間の距離Ａが０<Ｘ≦１ｍｍに設定されたので、出力信号振幅を大きくとれる磁性体検出器を提供できる。また、半導体パッケージが裏側に前記感磁部の下に位置する構成部分の除去された裏面を備えたので、半導体磁気抵抗素子の感磁面と磁石表面との距離を小さくでき、出力信号振幅を大きくとれる磁性体検出器を提供できる。また、前記感磁部の下に位置する構成部分の除去された裏面が、凹部孔の底面により形成されたことで、磁石表面側を凹部孔内に挿入することで磁石を簡単に位置決めでき、感磁部表面と磁石表面との正確な位置決めが容易となる。また、前記感磁部の下に位置する構成部分の除去された裏面が、研磨された平坦面により形成されたことで、感磁面と磁石表面との距離をさらに小さくできる。また、リードフレームがチップの感磁部表面とは反対方向に折曲されて外部接続リードとして形成されたことで、外部接続リードを別途設ける必要もなく、生産工程を簡略化でき、磁性体検出器の小型化も図ることができる。また、半導体パッケージの裏面に露出させたリードフレームとリードフレームとは別体の外部接続リードとがプリント配線基板を介して電気的に接続され、プリント配線基板が磁石表面を半導体パッケージの裏面に密着させるための貫通孔を備えたことで、感磁面と磁石表面との距離を小さくできる。また、磁石と外部接続リードとがホルダにより保持された状態で磁気検出体が封止されたことで、磁気検出体のアセンブリを容易にでき、また、正確な位置に磁石を保持でき、かつ、外部接続リード部を保護できる。また、感磁部表面と対向するケースの表面が金属板により形成され、金属板の厚さが０．５ｍｍ以下に設定されたことで、金属板で感磁部表面を保護でき、かつ、磁気検出対象と感磁部表面との間の距離を小さくできて、出力信号振幅を大きくとれる磁性体検出器を提供できる。また、感磁部表面の面中心と磁石表面の面中心とを一致させたことで、感磁部表面の上側から見て感磁部表面が永久磁石の磁石表面の面領域内に正確に配置される。また、感磁部表面における磁束密度を、磁気抵抗効果により感磁部の抵抗値が５０％以上増加する磁束密度としたことで、高感度の磁気検出器が得られる。また、磁石としてＳｍＣｏにより形成された磁石を用いたことで、感磁部表面における磁束密度を大きくできる。また、半導体磁気抵抗素子が化合物半導体薄膜により形成され、化合物半導体薄膜にはドナー不純物をドープしたので、磁気抵抗素子のオフセット電圧の温度ドリフトを小さくできる。また、ドナー不純物をＳｉ、Ｓｎ、Ｓ、Ｓｅ、Ｔｅ、Ｇｅ、Ｃとしたので、磁気抵抗素子のオフセット電圧の温度ドリフトを小さくできる。化合物半導体薄膜は結晶粒界を有しない単結晶ＩｎＳｂ薄膜としたので、感度が高くＳＮ比の良い磁気抵抗素子を形成できる。また、単結晶ＩｎＳｂ薄膜の厚さを０．１〜４．０μｍとしたので、半導体磁気抵抗素子の個体差を小さくできる。
さらに、感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージにおいて、感磁部表面に垂直磁界を加える磁石が配置される裏側に前記感磁部の下に位置する構成部分の除去された裏面を備えた化合物半導体薄膜からなる感磁部を有する半導体磁気抵抗素子を備えた半導体パッケージによれば、感磁面と磁石表面との距離を小さくできる。また、前記感磁部の下に位置する構成部分の除去された裏面が、凹部孔の底面により形成されたことで、磁石の位置決めも容易となる。また、前記感磁部の下に位置する構成部分の除去された裏面が、研磨された平坦面により形成されたことで、感磁面と磁石表面との距離をさらに小さくできる。また、チップをダイボンドしたリードフレームを裏面に露出させた半導体パッケージの場合は、上述した貫通孔付きのプリント配線基板を用いてリードフレームとリードフレームとは別体の外部接続リードとを電気的に接続することで、感磁面と磁石表面との距離を小さくできる。 According to the present invention, since the magnetic sensitive part surface is arranged in the surface area of the magnet surface, and the distance A between the magnetic sensitive part surface and the magnet surface is set to 0 <X ≦ 1 mm, the output It is possible to provide a magnetic detector that can increase the signal amplitude. In addition, since the semiconductor package is provided with the back surface from which the components located under the magnetic sensing part are removed on the back side, the distance between the magnetic sensing surface of the semiconductor magnetoresistive element and the magnet surface can be reduced, and the output signal amplitude can be reduced. A large magnetic detector can be provided. In addition, since the back surface from which the component located under the magnetic sensing portion is removed is formed by the bottom surface of the recess hole, the magnet can be easily positioned by inserting the magnet surface side into the recess hole, Accurate positioning between the magnetic sensitive part surface and the magnet surface is facilitated. In addition, since the back surface from which the constituent portion located under the magnetic sensing portion is removed is formed by a polished flat surface, the distance between the magnetic sensing surface and the magnet surface can be further reduced. In addition, since the lead frame is bent in the opposite direction to the surface of the magnetic sensing part of the chip and formed as an external connection lead, there is no need to provide a separate external connection lead, simplifying the production process, and detecting the magnetic material The size of the vessel can also be reduced. In addition, the lead frame exposed on the back surface of the semiconductor package and the external connection lead separate from the lead frame are electrically connected via the printed circuit board, and the printed circuit board adheres the magnet surface to the back surface of the semiconductor package. By providing the through-hole for making it possible, the distance between the magnetosensitive surface and the magnet surface can be reduced. In addition, since the magnetic detector is sealed with the magnet and the external connection lead held by the holder, the assembly of the magnetic detector can be facilitated, the magnet can be held at an accurate position, and The external connection lead can be protected. In addition, the surface of the case facing the magnetic sensitive part surface is formed of a metal plate, and the thickness of the metal plate is set to 0.5 mm or less, so that the magnetic sensitive part surface can be protected by the metal plate and magnetic It is possible to provide a magnetic detector that can reduce the distance between the detection target and the surface of the magnetic sensing part and increase the output signal amplitude. In addition, by aligning the surface center of the magnetic sensitive part surface with the surface center of the magnet surface, the magnetic sensitive part surface is accurately positioned within the surface area of the permanent magnet surface when viewed from above the magnetic sensitive part surface. Is done. Moreover, a magnetic sensor with high sensitivity can be obtained by setting the magnetic flux density on the surface of the magnetic sensitive part to a magnetic flux density at which the resistance value of the magnetic sensitive part increases by 50% or more due to the magnetoresistive effect. Moreover, the magnetic flux density in the surface of a magnetic sensing part can be enlarged by using the magnet formed of SmCo as a magnet. In addition, since the semiconductor magnetoresistive element is formed of a compound semiconductor thin film and the compound semiconductor thin film is doped with a donor impurity, the temperature drift of the offset voltage of the magnetoresistive element can be reduced. Further, since the donor impurity is Si, Sn, S, Se, Te, Ge, C, the temperature drift of the offset voltage of the magnetoresistive element can be reduced. Since the compound semiconductor thin film is a single crystal InSb thin film having no crystal grain boundary, a magnetoresistive element with high sensitivity and good SN ratio can be formed. Moreover, since the thickness of the single crystal InSb thin film is set to 0.1 to 4.0 μm, the individual difference of the semiconductor magnetoresistive elements can be reduced.
Further, in a semiconductor package in which a chip having a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with resin, a magnet that applies a vertical magnetic field to the surface of the magnetic sensitive part is disposed under the magnetic sensitive part. According to the semiconductor package including the semiconductor magnetoresistive element having the magnetically sensitive portion made of the compound semiconductor thin film having the rear surface from which the constituent portion is removed, the distance between the magnetically sensitive surface and the magnet surface can be reduced. In addition, since the back surface from which the constituent portion located under the magnetic sensing portion is removed is formed by the bottom surface of the recess hole, positioning of the magnet is facilitated. In addition, since the back surface from which the constituent portion located under the magnetic sensing portion is removed is formed by a polished flat surface, the distance between the magnetic sensing surface and the magnet surface can be further reduced. In the case of a semiconductor package in which a lead frame die-bonded to the chip is exposed on the back surface, the lead frame and the external connection lead separate from the lead frame are electrically connected using the above-described printed wiring board with a through hole. By connecting, the distance between the magnetosensitive surface and the magnet surface can be reduced.

図１に示すように、最良の形態による磁性体検出器１は、ケース２内に磁気検出体３が樹脂４により封止されてなる。   As shown in FIG. 1, the magnetic detector 1 according to the best mode includes a case 2 in which a magnetic detector 3 is sealed with a resin 4.

ケース２は、筒体５と筒体５の一端側の開口６に取り付けられて当該開口６を閉塞する金属板７とにより形成される。筒体５は例えば樹脂により形成される。   The case 2 is formed by a cylindrical body 5 and a metal plate 7 that is attached to the opening 6 on one end side of the cylindrical body 5 and closes the opening 6. The cylinder 5 is made of, for example, resin.

磁気検出体３は、複数の半導体磁気抵抗素子（以下、「磁気抵抗素子」と略す）を備えたチップ９が樹脂で封止（モールド）された半導体パッケージ８（以下、「パッケージ」と略す）と、磁気抵抗素子の感磁部９０に垂直磁界を付与する永久磁石１０（（以下、「磁石」と略す）と、ホルダ１１とで形成される。   The magnetic detector 3 includes a semiconductor package 8 (hereinafter abbreviated as “package”) in which a chip 9 having a plurality of semiconductor magnetoresistive elements (hereinafter abbreviated as “magnetoresistive elements”) is sealed (molded) with resin. And a permanent magnet 10 (hereinafter abbreviated as “magnet”) that applies a vertical magnetic field to the magnetic sensing portion 90 of the magnetoresistive element, and a holder 11.

例えば、図５（ａ）に示すように、チップ９は、絶縁性基板１２と、絶縁性基板１２上に形成された化合物半導体薄膜１３と、化合物半導体薄膜１３上に形成された複数の短絡電極１４及び端子電極１５とを備えて構成される。絶縁性基板１２上に形成された化合物半導体薄膜１３と化合物半導体薄膜１３上に形成された複数の短絡電極１４とにより磁気抵抗素子が構成され、この磁気抵抗素子が感磁部９０を構成する。感磁部９０の表面９１は保護膜１６で保護され、保護膜１６の上には柔らかいシリコン樹脂等の軟質樹脂層１７が形成される。パッケージ８の成形の際には、このチップ９を図外の樹脂封止成形金型内に位置決めし、エポキシ樹脂等の熱硬化型のモールド樹脂で封止した。軟質樹脂層１７を設けたことにより、モールド樹脂による感磁部表面９１への圧力や感磁部表面９１の面内応力を緩和でき、感磁部９０を保護できる。   For example, as shown in FIG. 5A, a chip 9 includes an insulating substrate 12, a compound semiconductor thin film 13 formed on the insulating substrate 12, and a plurality of short-circuit electrodes formed on the compound semiconductor thin film 13. 14 and the terminal electrode 15. A magnetoresistive element is constituted by the compound semiconductor thin film 13 formed on the insulating substrate 12 and the plurality of short-circuit electrodes 14 formed on the compound semiconductor thin film 13, and this magnetoresistive element constitutes the magnetosensitive portion 90. The surface 91 of the magnetic sensitive part 90 is protected by the protective film 16, and a soft resin layer 17 such as a soft silicone resin is formed on the protective film 16. When the package 8 was molded, the chip 9 was positioned in a resin-sealed molding die (not shown) and sealed with a thermosetting mold resin such as an epoxy resin. By providing the soft resin layer 17, the pressure on the magnetic sensing part surface 91 and the in-plane stress of the magnetic sensing part surface 91 due to the mold resin can be relieved, and the magnetic sensing part 90 can be protected.

図１〜図３に示すように、パッケージ８は、チップ９がリードフレーム２０のアイランド２１（図５（ｂ）参照）にマウント（ダイボンド）され、端子電極１５とリードフレーム２０のアイランド２１の周りのパッド部２２とが金線等のボンディングワイヤ２３で互いに電気的に接続されたもの（図５（ｃ）参照）を、図外の樹脂封止成形金型内にセットし、樹脂封止成形金型内にモールド樹脂を流し込んで封止成形（パッケージング）することで作製した。   As shown in FIGS. 1 to 3, in the package 8, the chip 9 is mounted (die-bonded) on an island 21 (see FIG. 5B) of the lead frame 20, and the terminal electrode 15 and the island 21 of the lead frame 20 are surrounded. The pad portion 22 of the wire is electrically connected to each other by a bonding wire 23 such as a gold wire (see FIG. 5C) is set in a resin sealing mold not shown in the figure, and resin sealing molding is performed. It was manufactured by pouring mold resin into a mold and sealing molding (packaging).

パッケージ８の樹脂部２５の表面２６は、感磁部表面９１と平行な平面に形成される一方、パッケージ８の樹脂部２５の裏面２７にはパッケージ８の裏面２８からチップ９の裏面方向に窪んだ磁石位置決め凹部孔３０が形成される。この磁石位置決め凹部孔３０が、図外の樹脂封止成形金型の凸部により樹脂の除去された磁石位置決め固定部として機能する。この磁石位置決め凹部孔３０の底面３０ａにリードフレーム２０のアイランド２１が露出している。底面３０ａは磁石固定面として機能する。リードフレーム２０の外部接続リード２４（チップ９と外部回路とを繋ぐ配線部分）は、図２に示すように、樹脂部２５の側部２９より水平に突出して延長するリードフレーム２０の末端側が、後のリードフォーミング工程において図３に示すように下方に垂直に折曲される。このように、リードフレーム２０のリードフレーム２０の末端側がチップ９の感磁部表面９１と反対方向に折曲されて外部接続リード２４として形成されたので、外部接続リード２４を別途設ける必要もなく、生産工程を簡略化でき、また、磁性体検出器１の小型化を図ることができる。   The surface 26 of the resin portion 25 of the package 8 is formed in a plane parallel to the magnetic sensitive portion surface 91, while the back surface 27 of the resin portion 25 of the package 8 is recessed from the back surface 28 of the package 8 toward the back surface of the chip 9. A magnet positioning recess hole 30 is formed. This magnet positioning recess hole 30 functions as a magnet positioning fixing portion from which resin is removed by the convex portion of the resin sealing molding die not shown. The island 21 of the lead frame 20 is exposed on the bottom surface 30 a of the magnet positioning recess hole 30. The bottom surface 30a functions as a magnet fixing surface. As shown in FIG. 2, the external connection lead 24 of the lead frame 20 (wiring portion connecting the chip 9 and the external circuit) protrudes horizontally from the side portion 29 of the resin portion 25 and extends at the end side of the lead frame 20. In the subsequent lead forming process, the sheet is bent vertically downward as shown in FIG. As described above, since the end side of the lead frame 20 of the lead frame 20 is bent in the direction opposite to the magnetic sensitive surface 91 of the chip 9 and formed as the external connection lead 24, there is no need to provide the external connection lead 24 separately. The production process can be simplified, and the magnetic substance detector 1 can be miniaturized.

ホルダ１１には、上面１１ａに開放したパッケージ載置凹部孔３１が形成され、さらに、パッケージ載置凹部孔３１と同心でパッケージ載置凹部孔３１の径より一回り小さい径の磁石保持孔３２がホルダ１１の下面１１ｂ方向に向けて形成される。言い換えれば、磁石保持孔３２の上部開放部周りに、磁石保持孔３２と同心で磁石保持孔３２の径より一回り大きい径のパッケージ載置凹部孔３１が形成される。さらに、ホルダ１１にはホルダ１１の上面１１ａから下面１１ｂに貫通する外部接続リード保持孔３３が形成される。   The holder 11 is formed with a package placement recess hole 31 opened in the upper surface 11a, and further has a magnet holding hole 32 concentric with the package placement recess hole 31 and having a diameter slightly smaller than the diameter of the package placement recess hole 31. It is formed toward the lower surface 11 b of the holder 11. In other words, around the upper open portion of the magnet holding hole 32, the package mounting recessed hole 31 having a diameter that is concentric with the magnet holding hole 32 and slightly larger than the diameter of the magnet holding hole 32 is formed. Further, the holder 11 is formed with an external connection lead holding hole 33 penetrating from the upper surface 11 a to the lower surface 11 b of the holder 11.

図４に示すように、パッケージ８、磁石１０、ホルダ１１、ケース２をアセンブリして磁性体検出器１を製作する。即ち、図１に示すように、まず、磁石１０の一方の磁石表面１０ａ側をパッケージ８の裏面２８に形成された磁石位置決め凹部孔３０に嵌め込んで接着剤などで固定し、磁石位置決め凹部孔３０の底面３０ａと磁石表面１０ａとを互いに接触させた。そして、パッケージ８の磁石位置決め凹部孔３０に取付けられた磁石１０の他方の磁石表面１０ｂ側をホルダ１１の磁石保持孔３２に挿入するとともに、パッケージ８のリードフレーム２０の折り曲げられた外部接続リード２４をホルダ１１のリード保持孔３３に挿入し、そして、パッケージ８の裏面２８側をパッケージ載置凹部孔３１に嵌め込む。この状態で、接着剤などによりパッケージ８とホルダ１１とを互いに組付ける。組付けられて一体化されたパッケージ８と磁石１０とホルダ１１とからなる磁気検出体３をケース２内に位置決めして配置した状態で、磁気検出体３を樹脂４により封止する。以上にように磁性体検出器１を作製した。   As shown in FIG. 4, the magnetic body detector 1 is manufactured by assembling the package 8, the magnet 10, the holder 11, and the case 2. That is, as shown in FIG. 1, first, one magnet surface 10a side of the magnet 10 is fitted into a magnet positioning recess hole 30 formed on the back surface 28 of the package 8 and fixed with an adhesive or the like. The 30 bottom surface 30a and the magnet surface 10a were brought into contact with each other. Then, the other magnet surface 10 b side of the magnet 10 attached to the magnet positioning recess hole 30 of the package 8 is inserted into the magnet holding hole 32 of the holder 11, and the bent external connection lead 24 of the lead frame 20 of the package 8. Is inserted into the lead holding hole 33 of the holder 11, and the back surface 28 side of the package 8 is fitted into the package mounting recess hole 31. In this state, the package 8 and the holder 11 are assembled together with an adhesive or the like. The magnetic detector 3 is sealed with the resin 4 in a state where the magnetic detector 3 including the assembled package 8, the magnet 10, and the holder 11 is positioned and arranged in the case 2. The magnetic substance detector 1 was produced as described above.

図１〜図４では、Ａ相出力部、Ｂ相出力部（Ａ相とＢ相は位相が９０°ずれている）、Ｚ相出力部（検出対象磁性体としての歯車の１回転におけるインデックス検出用）を備えた磁性体検出器１を図示している。即ち、例えば、図６；７に示すような、４個の磁気抵抗素子４１ａ〜４１ｄをループ状に接続して構成された４端子磁気抵抗素子４６（即ち、Ａ；Ｂ；Ｖｉｎ；ＧＮＤの４つの端子電極１５を備えたＡ相出力／Ｂ相出力の２相出力タイプ）を、２個備えた構成の磁性体検出器１を図示している。図６；７に示すように４端子磁気抵抗素子４６を１個備えた構成の磁性体検出器１の場合は、パッケージ８の外部接続リード２４を４本備え、磁石１０を１つ組付けた構成となる。図８；９に示すような２個の磁気抵抗素子４０ａ；４０ｂを直列に接続した３端子磁気抵抗素子４７（（即ち、Ｖｏｕｔ；Ｖｉｎ；ＧＮＤの３つの端子電極１５を備えた単相出力タイプ）を１個備えた構成の磁性体検出器１の場合は、パッケージ８の外部接続リード２４を３本備え、磁石１０を１つ組付けた構成となる。   1 to 4, an A-phase output unit, a B-phase output unit (phases A and B are 90 ° out of phase), and a Z-phase output unit (index detection in one rotation of a gear as a detection target magnetic body 1 is shown. That is, for example, as shown in FIGS. 6 and 7, a four-terminal magnetoresistive element 46 formed by connecting four magnetoresistive elements 41a to 41d in a loop shape (ie, A; B; Vin; GND 4). 2 shows a magnetic substance detector 1 having two A-phase output / B-phase output type two terminal electrodes 15). As shown in FIGS. 6 and 7, in the case of the magnetic detector 1 having one 4-terminal magnetoresistive element 46, four external connection leads 24 of the package 8 are provided, and one magnet 10 is assembled. It becomes composition. 8; 9, a three-terminal magnetoresistive element 47 in which two magnetoresistive elements 40a; 40b are connected in series (that is, a single-phase output type having three terminal electrodes 15 of Vout; Vin; GND). In the case of the magnetic substance detector 1 having a configuration including one), three external connection leads 24 of the package 8 are provided, and one magnet 10 is assembled.

図１０に示すような磁石１０、即ち、感磁部表面９１と平行に対向させる磁石表面１０ａ（一方の磁極面）における検出対象磁性体の走査方向Ｒ（例えば、検出対象磁性体としての歯車４８の回転方向）に沿った方向の長さがＸｍｍ、磁石表面１０ａにおける検出対象磁性体の走査方向と垂直方向Ｖの長さがＹｍｍ、感磁部表面９１と垂直方向Ｎの長さがＺｍｍのサイズのＳｍＣｏ磁石を想定し、この磁石１０の磁石表面１０ａの面内領域上に感磁部９０を配置することを想定する。尚、図６に示すような４端子磁気抵抗素子４６の場合、感磁部９０は、図１１に示すように、チップ９の素子形成面９２における磁石表面１０ａの走査方向Ｒの一端９３と磁気抵抗素子４１ａとの間の距離ｈ１と素子形成面９２における磁石表面１０ａの走査方向Ｒの他端９４と磁気抵抗素子４１ｄとの間の距離ｈ２とが同じで、また、チップ９の素子形成面９２における磁石表面１０ａの垂直方向Ｖの一端９５と磁気抵抗素子４６との間の距離ｄ１と素子形成面９２における磁石表面１０ａの垂直方向Ｖにおける他端９６と磁気抵抗素子４６との間の距離ｄ２とが同じとなるよう、チップ９の素子形成面９２の中心を基準として素子形成面９２の中央に位置している。また、図８に示すような３端子磁気抵抗素子４７の場合、感磁部９０は、図８に示すように、チップ９の素子形成面９２における磁石表面１０ａの走査方向Ｒの一端９３と磁気抵抗素子４０ａとの間の距離ｈ１と素子形成面９２における磁石表面１０ａの走査方向Ｒの他端９４と磁気抵抗素子４０ｂとの間の距離ｈ２とが同じで、また、チップ９の素子形成面９２における磁石表面１０ａの垂直方向Ｖの一端９５と磁気抵抗素子４７との間の距離ｄ１と素子形成面９２における磁石表面１０ａの垂直方向Ｖにおける他端９６と磁気抵抗素子４７との間の距離ｄ２とが同じとなるよう、チップ９の素子形成面９２の中心を基準として素子形成面９２の中央に位置している。上記Ｘ＝５．５ｍｍ、Ｙ＝４．５ｍｍ、Ｚ＝４．５ｍｍのサイズのＳｍＣｏ磁石（以下、「実施サイズの磁石」という）を用い、磁石表面１０ａの面領域内上に感磁部９０を配置した。即ち、図１１に示すように、４端子磁気抵抗素子４６の感磁部表面９１の面積より大きい面積の磁石表面１０ａを備えた磁石１０を感磁部９０の裏側に配置し、感磁部表面９１の上側から見て、感磁部表面９１の中心と磁石表面１０ａの中心とを一致させて感磁部表面９１と磁石表面１０ａとを平行に対向させた。この場合において、磁石表面１０ａと感磁部表面９１との間の表面間最短距離をＡ（以下、Ａを「縦距離」という）とし、感磁部表面９１の一端９１ｘと磁石表面１０ａの一端１０ｘとの間の端部間最短距離をＢ１及び感磁部表面９１の右端９１ｙと磁石表面１０ａの右端１０ｙとの間の端部間最短距離をＢ２とする（以下、これらＢ１、Ｂ２を「横距離」という）。そして、縦距離Ａを変えた場合の、磁石表面１０ａの中心Ｃの真上に位置する感磁部表面９１の磁束密度（以下「感磁部表面磁束密度」という）を測定した結果を図１２に示した。図１２から、縦距離Ａを小さく（短く）した方が感磁部表面磁束密度を大きくできること、縦距離Ａを１ｍｍとした場合でも２３００Ｇ程度の磁束密度が得られることがわかる。尚、縦距離Ａを小さくした方が感磁部表面磁束密度を大きくできることは、図８；図９に示す３端子磁気抵抗素子４７の感磁部９０の場合でも同じである。   The magnet 10 as shown in FIG. 10, that is, the scanning direction R of the magnetic body to be detected on the magnetic surface 10a (one magnetic pole surface) opposed in parallel with the magnetic sensing surface 91 (for example, the gear 48 as the magnetic body to be detected). The length in the direction along the rotation direction) is X mm, the length of the magnet surface 10a in the direction V perpendicular to the scanning direction of the magnetic substance to be detected is Y mm, and the length in the direction N perpendicular to the magnetic sensing surface 91 is Z mm. Assuming a SmCo magnet of a size, it is assumed that the magnetic sensing part 90 is arranged on an in-plane region of the magnet surface 10a of the magnet 10. In the case of the four-terminal magnetoresistive element 46 as shown in FIG. 6, the magnetosensitive portion 90 is magnetically coupled to one end 93 in the scanning direction R of the magnet surface 10a on the element forming surface 92 of the chip 9, as shown in FIG. The distance h1 between the resistor element 41a and the distance h2 between the other end 94 in the scanning direction R of the magnet surface 10a on the element forming surface 92 and the magnetoresistive element 41d are the same, and the element forming surface of the chip 9 92, the distance d1 between one end 95 of the magnet surface 10a in the vertical direction V of the magnet surface 10a and the magnetoresistive element 46, and the distance between the other end 96 of the element forming surface 92 in the vertical direction V of the magnet surface 10a and the magnetoresistive element 46. It is located at the center of the element formation surface 92 with respect to the center of the element formation surface 92 of the chip 9 so that d2 is the same. Further, in the case of the three-terminal magnetoresistive element 47 as shown in FIG. 8, the magnetic sensing part 90 is magnetically connected to one end 93 in the scanning direction R of the magnet surface 10a on the element forming surface 92 of the chip 9, as shown in FIG. The distance h1 between the resistor element 40a and the distance h2 between the other end 94 in the scanning direction R of the magnet surface 10a on the element forming surface 92 and the magnetoresistive element 40b are the same, and the element forming surface of the chip 9 92, the distance d1 between one end 95 of the magnet surface 10a in the vertical direction V of the magnet surface 10a and the magnetoresistive element 47, and the distance between the other end 96 in the direction V of the magnet surface 10a on the element forming surface 92 in the vertical direction. It is located at the center of the element formation surface 92 with respect to the center of the element formation surface 92 of the chip 9 so that d2 is the same. Using the above-mentioned SmCo magnets having the sizes of X = 5.5 mm, Y = 4.5 mm, and Z = 4.5 mm (hereinafter referred to as “executed size magnets”), the magnetic sensitive portion 90 is formed on the surface area of the magnet surface 10a. Arranged. That is, as shown in FIG. 11, the magnet 10 having the magnet surface 10 a having an area larger than the area of the magnetic sensing portion surface 91 of the four-terminal magnetoresistive element 46 is disposed on the back side of the magnetic sensing portion 90, As viewed from above 91, the center of the magnetic sensing surface 91 and the center of the magnet surface 10a are made to coincide with each other so that the magnetic sensing surface 91 and the magnet surface 10a face each other in parallel. In this case, the shortest surface-to-surface distance between the magnet surface 10a and the magnetic sensing portion surface 91 is A (hereinafter, A is referred to as “longitudinal distance”), and one end 91x of the magnetic sensing portion surface 91 and one end of the magnet surface 10a. 10x is the shortest end-to-end distance between B1 and B2 is the shortest end-to-end distance between the right end 91y of the magnetosensitive surface 91 and the right end 10y of the magnet surface 10a (hereinafter, B1 and B2 are referred to as " Lateral distance)). 12 shows the result of measuring the magnetic flux density of the magnetic sensitive portion surface 91 (hereinafter referred to as “magnetic sensitive portion surface magnetic flux density”) located immediately above the center C of the magnet surface 10a when the longitudinal distance A is changed. It was shown to. From FIG. 12, it can be seen that the magnetic flux density on the surface of the magnetic sensing portion can be increased by decreasing (shortening) the longitudinal distance A, and that a magnetic flux density of about 2300 G can be obtained even when the longitudinal distance A is 1 mm. It is to be noted that the magnetic flux density on the surface of the magnetic sensing part can be increased by reducing the longitudinal distance A in the case of the magnetic sensing part 90 of the three-terminal magnetoresistive element 47 shown in FIGS.

図８；図９に示すように、２個の磁気抵抗素子４０ａ，４０ｂを直列に接続した３端子磁気抵抗素子４７を備えた磁性体検出器１の磁気抵抗素子４０ａ，４０ｂに直流電源Ｅ（Ｖｉｎ＝５Ｖ）を接続し、図１３に示すように、検出対象磁性体としての歯車４８を回転させて歯車回転検出測定を行った。使用した歯車４８は、ＪＩＳ規Ｂ１７０１−１円筒歯車インボリュート歯車ｐ＝０．８πである。上述したサイズのＳｍＣｏ磁石１０を用い、縦距離Ａを０．５ｍｍ、０．７ｍｍ、０．７５ｍｍ、０．８５ｍｍのそれぞれに設定した場合において、歯車４８と感磁部表面９１との間の最短距離ＺＡと信号出力振幅との関係を測定した。その結果を図１４に示す。歯車４８と感磁部表面９１との間の距離ＺＡを０．７ｍｍとし、縦距離Ａを変えた場合の縦距離Ａと信号出力振幅との関係を図１５に示す。図１５からは、図１２との関係と相関して、縦距離Ａが大きくなるほど、信号出力振幅が低下していくことがわかり、大きな出力信号振幅（３００ｍＶ程度）を得るためには、縦距離Ａを１ｍｍ程度以下に設定すればよいことがわかる。また、金属板７で感磁部表面９１を保護でき、かつ、ケース２の金属板７の厚さを０．５ｍｍ以下に設定することで、磁気検出対象としての歯車４８と感磁部表面９１との間の距離ＺＡを小さくできて、出力信号振幅を大きくとれる磁性体検出器１を提供できる。   As shown in FIG. 8; FIG. 9, a DC power supply E () is connected to the magnetoresistive elements 40a and 40b of the magnetic detector 1 having a three-terminal magnetoresistive element 47 in which two magnetoresistive elements 40a and 40b are connected in series. Vin = 5V) was connected, and the gear rotation detection measurement was performed by rotating the gear 48 as the detection target magnetic body as shown in FIG. The used gear 48 is JIS standard B1701-1 cylindrical gear involute gear p = 0.8π. When the SmCo magnet 10 having the above-described size is used and the longitudinal distance A is set to 0.5 mm, 0.7 mm, 0.75 mm, and 0.85 mm, respectively, the shortest distance between the gear 48 and the magnetically sensitive portion surface 91 is set. The relationship between the distance ZA and the signal output amplitude was measured. The result is shown in FIG. FIG. 15 shows the relationship between the longitudinal distance A and the signal output amplitude when the distance ZA between the gear 48 and the magnetic sensitive surface 91 is 0.7 mm and the longitudinal distance A is changed. From FIG. 15, it can be seen that the signal output amplitude decreases as the vertical distance A increases in correlation with the relationship with FIG. 12. In order to obtain a large output signal amplitude (about 300 mV), the vertical distance It can be seen that A may be set to about 1 mm or less. The magnetic plate surface 91 can be protected by the metal plate 7 and the thickness of the metal plate 7 of the case 2 is set to 0.5 mm or less, so that the gear 48 as the magnetic detection target and the magnetic plate surface 91 are detected. The magnetic body detector 1 can be provided which can reduce the distance ZA between the two and the output signal amplitude.

最良の形態では、パッケージ８の裏面２８に磁石位置決め凹部孔３０を形成したので、互いに平行に対向する磁石１０の磁石表面１０ａと感磁部表面９１との間の距離、即ち、縦距離Ａを小さくでき、よって、感磁部表面９１での磁束密度を大きくでき、出力信号振幅を大きくとれて、Ｓ／Ｎ比の良い磁性体検出器１を提供できる。また、磁石位置決め凹部孔３０は、感磁部表面９１に対する磁石１０の位置決め用としても機能する。即ち、感磁部表面９１の裏と対向した磁石１０の磁石表面１０ａの面積は感磁部表面９１の面積より大きく形成されるが、磁石位置決め凹部孔３０により、感磁部表面９１の上側から見て感磁部表面９１が磁石１０の磁石表面１０ａの面領域内上に正確に配置される。即ち、パッケージ８の裏面２８に磁石位置決め凹部孔３０を有していることは、縦距離Ａを縮めるばかりでなく、感磁部表面９１と磁石表面１０ａとの正確な位置決めを容易とする効果もある。また、ホルダ１１を備えたので、正確な位置に磁石１０を保持でき、かつ、外部接続リード２４を保護できる。即ち、磁石位置決め凹部孔３０や磁石保持孔３２などを備えたので、アセンブリを容易にできる。また、ホルダ１１はパッケージ載置凹部孔３１を備えるので、パッケージ８も正確な位置に位置決めできる。   In the best mode, since the magnet positioning recess hole 30 is formed in the back surface 28 of the package 8, the distance between the magnet surface 10 a of the magnet 10 and the magnetically sensitive portion surface 91 facing in parallel with each other, that is, the longitudinal distance A is set. Therefore, the magnetic flux density on the magnetic sensing surface 91 can be increased, the output signal amplitude can be increased, and the magnetic detector 1 having a good S / N ratio can be provided. The magnet positioning recess hole 30 also functions for positioning the magnet 10 with respect to the magnetic sensitive part surface 91. That is, although the area of the magnet surface 10a of the magnet 10 facing the back of the magnetic sensitive part surface 91 is formed larger than the area of the magnetic sensitive part surface 91, the magnet positioning recess hole 30 allows the area from the upper side of the magnetic sensitive part surface 91. As can be seen, the magnetosensitive part surface 91 is accurately arranged in the surface area of the magnet surface 10 a of the magnet 10. That is, having the magnet positioning recess hole 30 on the back surface 28 of the package 8 not only shortens the vertical distance A, but also has an effect of facilitating accurate positioning between the magnetic sensitive portion surface 91 and the magnet surface 10a. is there. Further, since the holder 11 is provided, the magnet 10 can be held at an accurate position, and the external connection lead 24 can be protected. That is, since the magnet positioning recess hole 30 and the magnet holding hole 32 are provided, assembly can be facilitated. In addition, since the holder 11 includes the package placement recess hole 31, the package 8 can be positioned at an accurate position.

最良の形態では、磁石位置決め凹部孔３０がリードフレーム２０のアイランド２１まで届く深さに形成されて、リードフレーム２０のアイランド２１を磁石位置決め凹部孔３０の底面３０ａに露出させたので、磁石１０を磁石位置決め凹部孔３０に挿入することで、磁石表面１０ａをリードフレーム２０のアイランド２１に接触させることができて、縦距離Ａを小さくできる。この場合、基板は絶縁性基板１２を使用しているために、端子電極１５と磁石１０との絶縁性は確保される。即ち、チップ９をマウントしている箇所のリードフレーム２０のアイランド２１の下部に硬質樹脂を設けないことにより、縦距離Ａを小さくできる。   In the best mode, the magnet positioning recess hole 30 is formed to a depth reaching the island 21 of the lead frame 20, and the island 21 of the lead frame 20 is exposed to the bottom surface 30 a of the magnet positioning recess hole 30. By inserting into the magnet positioning recess hole 30, the magnet surface 10a can be brought into contact with the island 21 of the lead frame 20, and the longitudinal distance A can be reduced. In this case, since the substrate uses the insulating substrate 12, the insulation between the terminal electrode 15 and the magnet 10 is ensured. That is, the vertical distance A can be reduced by not providing the hard resin under the island 21 of the lead frame 20 where the chip 9 is mounted.

図１６に示すように、磁石位置決め凹部孔３０をリードフレーム２０のアイランド２１まで届かない深さに形成してもよい。   As shown in FIG. 16, the magnet positioning recess hole 30 may be formed to a depth that does not reach the island 21 of the lead frame 20.

以下、最良の形態による磁性体検出器１の製造方法の実施例を説明する。化合物半導体薄膜１３は、分子線エピタキシー法（ＭＢＥ）を用いて絶縁性基板１２上に形成した。例えば、絶縁性基板１２としての半絶縁性のＧａＡｓ単結晶基板の（１００）面の上に化合物半導体薄膜１３としてＳｎドープＩｎＳｂ薄膜をエピタキシャル成長させた。例えば、まず、厚さ０．３５ｍｍの半絶縁性のＧａＡｓ単結晶基板にＡｓを照射しながら６５０℃で加熱し表面酸素を脱離させた。次に、５８０℃で温度を下げてＧａＡｓバッファ層を２００ｎｍの厚さで形成した。そして、Ａｓを照射しながら４００℃まで温度を下げた後、ＳｎとＩｎ、Ｓｂを同時に基板に照射しながら化合物半導体薄膜１３の膜厚１μｍからなるＳｎドープＩｎＳｂ単結晶薄膜を形成した。この際、ＩｎＳｂ単結晶薄膜の電子濃度は、７×１０１６ｃｍ−３になるようにＳｎセル温度を調節した。成膜したＩｎＳｂ単結晶薄膜の電気特性を測定したところ、電子濃度は７×１０１６ｃｍ−３、電子移動度は４０，０００ｃｍ２／Ｖｓであった。このように分子線エピタキシー（ＭＢＥ）法を用いて化合物半導体薄膜１３を形成したことで薄膜の膜厚や組成の制御性を向上でき、歯車回転等によって生じる磁束密度変化検出のために配置される複数の磁気抵抗素子の特性差を無くすことができた。 Hereinafter, an embodiment of a method for manufacturing the magnetic detector 1 according to the best mode will be described. The compound semiconductor thin film 13 was formed on the insulating substrate 12 using molecular beam epitaxy (MBE). For example, an Sn-doped InSb thin film was epitaxially grown as the compound semiconductor thin film 13 on the (100) plane of a semi-insulating GaAs single crystal substrate as the insulating substrate 12. For example, first, surface oxygen was desorbed by heating at 650 ° C. while irradiating a semi-insulating GaAs single crystal substrate having a thickness of 0.35 mm with As. Next, the temperature was lowered at 580 ° C. to form a GaAs buffer layer with a thickness of 200 nm. Then, the temperature was lowered to 400 ° C. while irradiating As, and then a Sn-doped InSb single crystal thin film having a thickness of 1 μm of the compound semiconductor thin film 13 was formed while simultaneously irradiating the substrate with Sn, In, and Sb. At this time, the Sn cell temperature was adjusted so that the electron concentration of the InSb single crystal thin film was 7 × 10 16 cm −3 . When the electrical characteristics of the formed InSb single crystal thin film were measured, the electron concentration was 7 × 10 16 cm −3 and the electron mobility was 40,000 cm 2 / Vs. By forming the compound semiconductor thin film 13 using the molecular beam epitaxy (MBE) method as described above, the controllability of the film thickness and composition of the thin film can be improved, and the compound semiconductor thin film 13 is arranged for detecting a change in magnetic flux density caused by gear rotation or the like. Differences in the characteristics of the plurality of magnetoresistive elements could be eliminated.

図１７に磁気抵抗素子の作製プロセスフローの一例を示す。この図１７では３端子磁気抵抗素子４７の作製例を図示している。磁気抵抗素子は、フォトリソグラフィーの技術を用いて形成した。まず、絶縁性基板１２としてのＧａＡｓ基板のＩｎＳｂ表面にフォトレジスト５０をスピンコータを用いて均一に塗布した（図１７（ａ））。フォトレジスト５０の塗布条件は、１００ｃｐの粘度で３２００ｒｐｍの回転速度で２０秒間回転すると２．５μｍの厚さとなる。そして、ＩｎＳｂのメサエッチング用のフォトマスク等を用いて露光・現像した後に塩酸・過酸化水素系のエッチング液で所望の形状に化合物半導体薄膜１３としてのＩｎＳｂ薄膜をメサエッチングした（図１７（ｂ））。次に再度、フォトレジストを塗布した後に、短絡電極１４を形成するための露光・現像を行い、真空蒸着法により電極１５を蒸着し、リフトオフ法で短絡電極１４を形成した（図１７（ｃ））。短絡電極１４は、フォトレジストによりレジストパターンを形成した後に、電子ビーム法により短絡電極として５０ｎｍ厚のＴｉと４００ｎｍ厚のＡｕ、さらに５０ｎｍ厚のＮｉからなる積層電極を形成し、リフトオフ法を用いて所望の短絡電極形状を作製した。さらに、保護膜１６として窒化シリコン薄膜を３００ｎｍの厚さでプラズマＣＶＤ法により形成し、端子電極部分のみの窒化シリコン膜を、反応性イオンエッチング装置を用いて除去した（図１７（ｄ））。最後に短絡電極の形成方法と同様にして、端子電極１５を形成した（図１７（ｅ））。端子電極１５として５０ｎｍ厚のＴｉと４００ｎｍ厚のＡｕからなる積層電極とした。また、端子電極１５は化合物半導体薄膜１３からなる動作層との接触を改善するために、不活性ガス雰囲気で５００℃×２分間の熱処理を行った。このようにして絶縁性基板１２上に化合物半導体薄膜１３と複数の短絡電極１４とを備えた複数の磁気抵抗素子４０ａ；４０ｂを有し、かつ、複数の端子電極１５を有する高磁界感度の３端子磁気抵抗素子４７を、フォトリソグラフィーを応用した微細加工プロセスの応用により、図外の１枚のウエハ上に多数製作した。尚、図６〜図９に示すように、各磁気抵抗素子４０ａ；４０ｂの感磁部の間隔Ｗは、例えば、検出する歯車４８の山と谷の間隔Ｐに合わせた。尚、図１７では、３端子磁気抵抗素子４７の作製プロセスを例として図示したが、図６に示すような４端子磁気抵抗素子４６も同様のプロセスで作製できる。   FIG. 17 shows an example of a manufacturing process flow of the magnetoresistive element. FIG. 17 shows a manufacturing example of the three-terminal magnetoresistive element 47. The magnetoresistive element was formed using a photolithography technique. First, a photoresist 50 was uniformly applied to the InSb surface of a GaAs substrate as the insulating substrate 12 using a spin coater (FIG. 17A). The coating condition of the photoresist 50 is 2.5 μm when rotated for 20 seconds at a rotational speed of 3200 rpm with a viscosity of 100 cp. Then, after exposure and development using a photomask for mesa etching of InSb or the like, the InSb thin film as the compound semiconductor thin film 13 was mesa-etched into a desired shape with an etching solution of hydrochloric acid / hydrogen peroxide (FIG. 17B). )). Next, after applying a photoresist again, exposure and development for forming the short-circuit electrode 14 were performed, the electrode 15 was deposited by a vacuum deposition method, and the short-circuit electrode 14 was formed by a lift-off method (FIG. 17C). ). The short-circuit electrode 14 is formed by forming a resist pattern using a photoresist, and then forming a stacked electrode made of 50 nm-thick Ti, 400 nm-thick Au and 50 nm-thick Ni as a short-circuit electrode by an electron beam method, and using a lift-off method. A desired short-circuit electrode shape was produced. Further, a silicon nitride thin film having a thickness of 300 nm was formed as the protective film 16 by plasma CVD, and the silicon nitride film only on the terminal electrode portion was removed using a reactive ion etching apparatus (FIG. 17D). Finally, the terminal electrode 15 was formed in the same manner as the method for forming the short-circuit electrode (FIG. 17E). The terminal electrode 15 was a laminated electrode made of 50 nm thick Ti and 400 nm thick Au. The terminal electrode 15 was heat-treated at 500 ° C. for 2 minutes in an inert gas atmosphere in order to improve contact with the operation layer made of the compound semiconductor thin film 13. Thus, the high magnetic field sensitivity 3 having the plurality of magnetoresistive elements 40a; 40b including the compound semiconductor thin film 13 and the plurality of short-circuit electrodes 14 on the insulating substrate 12 and the plurality of terminal electrodes 15. A large number of terminal magnetoresistive elements 47 were manufactured on a single wafer (not shown) by applying a microfabrication process using photolithography. As shown in FIGS. 6 to 9, the interval W between the magnetic sensing portions of the magnetoresistive elements 40 a and 40 b is set to, for example, the interval P between the peaks and valleys of the detected gear 48. In FIG. 17, the manufacturing process of the three-terminal magnetoresistive element 47 is shown as an example, but the four-terminal magnetoresistive element 46 as shown in FIG. 6 can be manufactured by the same process.

次に、ウエハ上に多数製作した磁気抵抗素子（４端子磁気抵抗素子４６あるいは３端子磁気抵抗素子４７）を、ダイシングにより個別にチップ９（ダイ）として切離した。そして、ダイボンダーを用いて、リードフレーム２０（例えば厚さ０．１５ｍｍ）のアイランド２１上にチップ９をダイボンド（マウント）した。そして、ボンディングワイヤ２３としての３０μｍの金ワイヤーにより磁気抵抗素子の複数の端子電極１５とリードフレーム２０のパッド部２２間を、ワイヤーボンダーを用いてワイヤーボンドした。次いで、トランスファーモールド法で、エポキシ樹脂などのモールド樹脂により、チップ９を樹脂封止した。そして、タイバーカット、リードカット、及びリードのフォーミングを行ってパッケージ８を形成した。   Next, a large number of magnetoresistive elements (4-terminal magnetoresistive element 46 or 3-terminal magnetoresistive element 47) manufactured on the wafer were individually separated as chips 9 (die) by dicing. Then, the chip 9 was die-bonded (mounted) on the island 21 of the lead frame 20 (for example, thickness 0.15 mm) using a die bonder. Then, a wire bonder was used to wire bond between the plurality of terminal electrodes 15 of the magnetoresistive element and the pad portion 22 of the lead frame 20 with a 30 μm gold wire as the bonding wire 23. Next, the chip 9 was resin-sealed with a mold resin such as an epoxy resin by a transfer molding method. Then, tie bar cutting, lead cutting, and lead forming were performed to form a package 8.

次に、磁気抵抗素子の動作原理を説明する。図８に示したように、メサエッチング後のＩｎＳｂ薄膜の幅（電流に直交する方向の幅：素子幅）をＤとし、短絡電極間の距離（素子長）をＬすると、Ｌ／Ｄを形状因子と呼ぶ。ここでは、Ｌ／Ｄ＝０．２とした。この磁気抵抗素子４０ａ；４０ｂに電磁石で一様な磁場をかけて、抵抗値と磁束密度の関係を測定した。抵抗値は、図８の端子電極１５ａと端子電極１５ｂの間の抵抗を測定した。この結果を図１８に示す。図１９に磁気抵抗変化率ΔＲ／Ｒ０と磁束密度の関係を示す。ここで、ΔＲ＝ＲＢ−Ｒ０であり、ＲＢは磁場中での抵抗値、Ｒ０は磁場なしでの抵抗値である。図１９からわかるように、磁束密度が大きくなるほど、磁気抵抗変化率ΔＲ／Ｒ０の傾きは大きくなる。即ち、磁束密度の変化に対する感度が大きくなる。磁気抵抗素子にバイアスする磁束密度は、磁気抵抗変化率ΔＲ／Ｒ０が（磁気抵抗効果による感磁部の抵抗値の増加が）５０％以上であれば、高感度となる。 Next, the operating principle of the magnetoresistive element will be described. As shown in FIG. 8, when the width of the InSb thin film after mesa etching (width in the direction orthogonal to the current: element width) is D and the distance between the short-circuit electrodes (element length) is L, L / D is shaped. Called a factor. Here, L / D = 0.2. A uniform magnetic field was applied to the magnetoresistive elements 40a and 40b with an electromagnet, and the relationship between the resistance value and the magnetic flux density was measured. As for the resistance value, the resistance between the terminal electrode 15a and the terminal electrode 15b in FIG. 8 was measured. The result is shown in FIG. FIG. 19 shows the relationship between the magnetoresistance change rate ΔR / R 0 and the magnetic flux density. Here, a ΔR = R B -R 0, R B is the resistance in a magnetic field, R 0 is the resistance with no magnetic field. As can be seen from FIG. 19, as the magnetic flux density increases, the slope of the magnetoresistance change rate ΔR / R 0 increases. That is, the sensitivity to changes in magnetic flux density is increased. The magnetic flux density biased to the magnetoresistive element becomes high sensitivity when the magnetoresistive change rate ΔR / R 0 is 50% or more (increase in the resistance value of the magnetosensitive part due to the magnetoresistive effect).

４端子磁気抵抗素子４６を１個以上備えた磁性体検出器１の場合、例えば、図６；７に示すように、１つのチップ９上に４つの磁気抵抗素子４１ａ〜４１ｄを形成し、磁気抵抗素子４１ａの中央と磁気抵抗素子４１ｂの中央との間の間隔Ｗ、及び磁気抵抗素子４１ｃの中央と磁気抵抗素子４１ｄの中央との間の間隔Ｗを、例えば被検出体としての歯車４８の山と谷の間隔Ｐに等しくした。磁気抵抗素子４１ａ〜４１ｄの作製プロセスは、フォトリソグラフィーの技術を用いたため、磁気抵抗素子間の間隔は、量産されるすべての素子で精度よく再現される。従来の磁性体検出器では、４個の磁気抵抗素子４１ａ〜４１ｄを個別に切離し、ダイボンディグで配置していたが、これでは磁気抵抗素子４１ａ〜４１ｄ間の間隔Ｗと歯車の山谷の間隔Ｐ（ピッチ）とが微妙に異なってしまい、出力信号振幅、Ａ相／Ｂ層の位相差にかなり個体差が生じていた。一方、ここでは、１つのチップ９上に４個の磁気抵抗素子４１ａ〜４１ｄを作製したので、磁気抵抗素子間の間隔Ｗと歯車の山谷ピッチとは精確に合っているため、各磁気抵抗素子４１ａ〜４１ｄの個体差をほとんど生じない磁性体検出器１を得ることができる。   In the case of the magnetic substance detector 1 including one or more four-terminal magnetoresistive elements 46, for example, as shown in FIGS. 6 and 7, four magnetoresistive elements 41a to 41d are formed on one chip 9, and magnetic The distance W between the center of the resistor element 41a and the center of the magnetoresistive element 41b, and the distance W between the center of the magnetoresistive element 41c and the center of the magnetoresistive element 41d, for example, It was made equal to the interval P between the peaks and valleys. Since the manufacturing process of the magnetoresistive elements 41a to 41d uses a photolithography technique, the interval between the magnetoresistive elements is accurately reproduced in all the mass-produced elements. In the conventional magnetic detector, the four magnetoresistive elements 41a to 41d are individually separated and arranged by die bonding. However, in this case, the interval W between the magnetoresistive elements 41a to 41d and the interval P ( Pitch) slightly different from each other, and there is a considerable individual difference in the output signal amplitude and the phase difference between the A phase and the B layer. On the other hand, since the four magnetoresistive elements 41a to 41d are manufactured on one chip 9, the distance W between the magnetoresistive elements and the pitch of the gears are precisely matched. It is possible to obtain the magnetic substance detector 1 that hardly causes individual differences of 41a to 41d.

また、ＳｎをドープしてＩｎＳｂ単結晶薄膜１μｍを形成したので、Ｓｎをドープしたことにより、オフセット電圧の温度ドリフトを格段に改善できた。即ち、ＩｎＳｂは禁制帯が０．１７ｅＶと狭いために、半導体磁気抵抗素子の抵抗値の温度依存性が−２％／℃と大きいが、Ｓｎ（ドナーアトム）をドープして伝導帯の電子を増加させたことにより、抵抗値の温度依存性を−０．２４％／℃と劇的に小さくできたので、オフセット電圧の温度ドリフトを非常に小さくできた。   Further, since the InSb single crystal thin film of 1 μm was formed by doping Sn, the temperature drift of the offset voltage could be remarkably improved by doping Sn. That is, InSb has a narrow forbidden band of 0.17 eV, and the temperature dependence of the resistance value of the semiconductor magnetoresistive element is as large as −2% / ° C., but Sn (donor atom) is doped to convert electrons in the conduction band. By increasing the resistance, the temperature dependence of the resistance value could be drastically reduced to −0.24% / ° C., so that the temperature drift of the offset voltage could be extremely reduced.

他例１
図２０〜図２４に示すように、外部接続リードが半導体パッケージ８０から出ないタイプ、即ち、ノンリードタイプのリードフレーム７０を用いて半導体パッケージ８０を作製し、リードフレーム７０のパッド部７２（入出力端子部）と外部接続リード７３とをプリント配線基板７４を介して互いに電気的に接続させた。パッド部７２と外部接続リード７３はそれぞれプリント配線基板７４の接続パッド７５；７６にはんだ付けされる。図２０は本例の磁性体検出器１の断面図、図２１はパッケージ８０の断面図、図２２はパッケージの裏面図、図２３は磁石表面１０ａをパッケージ８０の裏面８１に密着させるための貫通孔７７が形成されたプリント配線基板を示す平面図、図２４は貫通孔７７に磁石１０を通した状態のプリント配線基板を示す平面図である。この場合、パッケージ８０の裏面８１にリードフレーム７０のアイランド７１とパッド部７２とを露出させたので、上記と同様に縦距離Ａを小さくできる。この例では、縦距離Ａを０．５０ｍｍとした（ＧａＡｓ基板：０．３５ｍｍ、リードフレーム０．１５ｍｍ）。この構成を採用して作製した磁性体検出器１を用いて、歯車回転検出測定を行った。歯車４８と感磁部表面９１と距離を０．７ｍｍにして、出力信号振幅を測定した結果、４８０ｍＶであり、上記と同様の出力信号振幅を確認できた。 Other example 1
As shown in FIGS. 20 to 24, the semiconductor package 80 is manufactured using a lead frame 70 of a type in which the external connection leads do not come out of the semiconductor package 80, that is, a non-lead type lead frame 70. The output terminal portion) and the external connection lead 73 were electrically connected to each other via the printed wiring board 74. The pad portion 72 and the external connection lead 73 are soldered to the connection pads 75; 76 of the printed wiring board 74, respectively. 20 is a sectional view of the magnetic detector 1 of this example, FIG. 21 is a sectional view of the package 80, FIG. 22 is a rear view of the package, and FIG. 23 is a through-hole for bringing the magnet surface 10a into close contact with the rear surface 81 of the package 80. FIG. 24 is a plan view showing the printed wiring board in a state where the magnet 10 is passed through the through-hole 77. In this case, since the island 71 and the pad portion 72 of the lead frame 70 are exposed on the back surface 81 of the package 80, the vertical distance A can be reduced as described above. In this example, the vertical distance A is 0.50 mm (GaAs substrate: 0.35 mm, lead frame 0.15 mm). Gear rotation detection measurement was performed using the magnetic substance detector 1 manufactured by adopting this configuration. As a result of measuring the output signal amplitude with the distance between the gear 48 and the magnetic sensitive surface 91 being 0.7 mm, it was 480 mV, and the same output signal amplitude as above was confirmed.

他例２
図２５に示すような形状のリードフレーム２００を用いて半導体パッケージ２０１を作製した後、図２６に示すように、研磨により、パッケージ２０１の裏側（化合物半導体薄膜１３の形成されてない基板１２側）からパッケージ樹脂２０３、リードフレーム２００のアイランド２０５のすべて、及び、半導体薄膜１３の形成されてなるＧａＡｓ基板（絶縁性基板１２）の裏面側を図２５の点線Ｇの箇所まで除去した半導体パッケージ２１０とした。リードフレーム２００の末端側は上方に折曲されている。このように半導体パッケージが裏側に、前記感磁部の下に位置する構成部分の除去された裏面、即ち、図２５の点線Ｇの箇所まで除去された平坦面２１１を備えた半導体パッケージ２１０を用いることにより、縦距離Ａを０．０５ｍｍ以下にできる。即ち、化合物半導体薄膜１３の膜厚及び基板１２の厚さを０に近くする。例えば、化合物半導体薄膜１３の膜厚は０．１〜４．０μｍに設定することで、縦距離Ａを例えば０<Ａ≦１ｍｍに設定でき、出力信号振幅を大きくとれる磁性体検出器１を提供できる。 Other example 2
After manufacturing the semiconductor package 201 using the lead frame 200 having the shape shown in FIG. 25, as shown in FIG. 26, the back side of the package 201 (the substrate 12 side where the compound semiconductor thin film 13 is not formed) is polished by polishing. A semiconductor package 210 in which the package resin 203, all of the islands 205 of the lead frame 200, and the back side of the GaAs substrate (insulating substrate 12) on which the semiconductor thin film 13 is formed are removed up to the dotted line G in FIG. did. The end side of the lead frame 200 is bent upward. In this way, the semiconductor package 210 is used, which is provided with the back surface from which the components located under the magnetic sensing portion are removed, that is, the flat surface 211 removed up to the dotted line G in FIG. Thus, the longitudinal distance A can be made 0.05 mm or less. That is, the film thickness of the compound semiconductor thin film 13 and the thickness of the substrate 12 are made close to zero. For example, by setting the thickness of the compound semiconductor thin film 13 to 0.1 to 4.0 μm, the magnetic distance detector 1 can be set so that the longitudinal distance A can be set to 0 <A ≦ 1 mm, for example, and the output signal amplitude can be increased. it can.

他例３
尚、図３、図１６、図２１では、ホルダ１１とケース２とに組付けて図１、図２０に示したような磁性体検出器１を構成するパッケージ８を示したが、図３、図１６、図２１で示したパッケージの裏に磁石を直接取付けて図３０のようにホルダ１１とケース２とを備えない磁性体検出器を構成してもよい。また、図２６に示したパッケージ２１０を用いて、図１、図２０、図３０に示したような磁性体検出器を構成してもよい。 Other example 3
3, 16, and 21 show the package 8 that constitutes the magnetic detector 1 as shown in FIGS. 1 and 20 by being assembled to the holder 11 and the case 2. A magnetic material detector that does not include the holder 11 and the case 2 as shown in FIG. 30 may be configured by directly attaching a magnet to the back of the package shown in FIGS. Moreover, you may comprise a magnetic body detector as shown in FIG.1, FIG.20, FIG.30 using the package 210 shown in FIG.

他例４
図２７に示すように、リードフレーム２０のアイランド２１の下から樹脂部分の高さ、即ち、裏面２５１からリードフレーム２０のアイランド２１までの高さが磁石１０の高さＺ以上の寸法に形成され、裏面２５１の中心に裏面２５１からアイランド２１の下面まで到達する磁石挿入孔２５２が形成された半導体パッケージ２５０を用いてもよい。即ち、磁石挿入孔２５２内に磁石１０全体が入り込んで外に突出しないような磁石挿入孔２５２を備えた半導体パッケージ２５０を用いてもよい。つまり、ホルダ１１を用いずに半導体パッケージ２５０の磁石挿入孔２５２内に磁石１０全体を嵌め込んだ後に磁石挿入孔２５２の開口２５３側から接着剤等の固定手段を用いて磁石挿入孔２５２に磁石１０を直接的に固定して磁性体検出器１を構成してもよい。 Other example 4
As shown in FIG. 27, the height of the resin portion from the bottom of the island 21 of the lead frame 20, that is, the height from the back surface 251 to the island 21 of the lead frame 20 is formed to have a dimension equal to or higher than the height Z of the magnet 10. Alternatively, a semiconductor package 250 in which a magnet insertion hole 252 that reaches from the back surface 251 to the lower surface of the island 21 is formed at the center of the back surface 251 may be used. That is, the semiconductor package 250 provided with the magnet insertion hole 252 that the entire magnet 10 enters the magnet insertion hole 252 and does not protrude outside may be used. That is, after the entire magnet 10 is fitted into the magnet insertion hole 252 of the semiconductor package 250 without using the holder 11, the magnet is inserted into the magnet insertion hole 252 from the opening 253 side of the magnet insertion hole 252 using a fixing means such as an adhesive. The magnetic substance detector 1 may be configured by directly fixing 10.

他例５
感磁部９０が図６；７に示すような４端子磁気抵抗素子４６により形成されている場合。即ち、４つの磁気抵抗素子４１ａ〜４１ｄが回路ループを形成したフルブリッジ構造で接続されており、Ａ相／Ｂ相の非差動２相出力である４端子磁気抵抗素子４６の場合。言い換えれば、４つの磁気抵抗素子４１ａ〜４１ｄで形成されるとともに電源供給端子とＧＮＤ端子と２つの出力端子Ａ；Ｂとを備え、出力端子Ａの両端に磁気抵抗素子４１ａ；４１ｂを直列に接続した直列回路と、出力端子Ｂの両端に磁気抵抗素子４１ｃ；４１ｄを直列に接続した直列回路とが並列接続された構成を有し、これら４つの磁気抵抗素子４１ａ〜４１ｄが検出対象磁性体の走査方向に沿った方向に並んで設けられ、直列回路を構成する２つの磁気抵抗素子４１ａ；４１ｂ（あるいは４１ｃ；４１ｄ）が検出対象磁性体の走査方向に沿った方向において前記感磁部表面９１の中心から等しい位置に形成されていない４端子磁気抵抗素子４６の場合は、走査方向Ｒに沿った方向において、直列に接続された磁気抵抗素子４１ａと４１ｂとが、チップ９の素子形成面９２の中央側と端側とに形成され、直列に接続された磁気抵抗素子４１ｃと４１ｄも、素子形成面９２の中央側と端側とに形成される。従って、図１１に示すように、４端子磁気抵抗素子４６が形成された感磁部表面９１の中心と磁石表面１０ａの中心とを一致させて、磁石表面１０ａの表面積より小さい表面積の感磁部表面９１が磁石表面１０ａの面領域内上に配置されたとしても、磁気抵抗素子４１ａと４１ｂとは（あるいは４１ｃと４１ｄとは）、チップ９の感磁部表面９１の中心に対して対称に配置されず、また、磁石表面１０ａの中心に対しても対称に配置されない。
以上の図１１に示すような４端子磁気抵抗素子４６の場合においては、特に、横距離Ｂ１（＝Ｂ２）が小さいと、上述した磁石表面１０ａの端部の反磁界の影響により、磁気抵抗素子４１ａと４１ｂ（あるいは４１ｃと４１ｄ）の感磁部表面９１の磁束密度に大きな差が生じる。即ち、各磁気抵抗素子４１ａ〜４１ｄの表面で形成された感磁部表面９１の磁束密度が平坦化しない。従って、磁気抵抗素子４１ａと４１ｂとに印加される磁界（あるいは４１ｃと４１ｄとに印加される磁界）の強さ（磁束密度）に差が生じることで、磁気抵抗素子４１ａと４１ｂ（あるいは４１ｃと４１ｄ）の抵抗値が異なってしまい、磁気抵抗素子４６の出力端子ＡやＢの電位は、印加電圧の半分（Ｖｉｎ／２）からずれてしまうことになる。つまり、磁気抵抗素子４６の出力信号Ａ：Ｂのオフセット電圧（Ｖｉｎ／２からのずれ）が大きくなってしまう。 Other example 5
The case where the magnetic sensitive part 90 is formed by a four-terminal magnetoresistive element 46 as shown in FIGS. That is, in the case of the four-terminal magnetoresistive element 46 which is a non-differential two-phase output of A phase / B phase, in which the four magnetoresistive elements 41a to 41d are connected in a full bridge structure forming a circuit loop. In other words, it is formed of four magnetoresistive elements 41a to 41d and includes a power supply terminal, a GND terminal, and two output terminals A; B, and the magnetoresistive elements 41a; 41b are connected in series at both ends of the output terminal A. And a series circuit in which magnetoresistive elements 41c and 41d are connected in series at both ends of the output terminal B are connected in parallel, and these four magnetoresistive elements 41a to 41d are made of the magnetic material to be detected. Two magnetoresistive elements 41a; 41b (or 41c; 41d), which are provided side by side in the direction along the scanning direction and constitute a series circuit, are arranged in the direction along the scanning direction of the magnetic material to be detected in the direction 91 along the scanning direction. In the case of the four-terminal magnetoresistive elements 46 that are not formed at the same position from the center of the magnetoresistive elements 41 a and 4 connected in series in the direction along the scanning direction R. b is formed on the center side and the end side of the element forming surface 92 of the chip 9, and the magnetoresistive elements 41c and 41d connected in series are also formed on the center side and the end side of the element forming surface 92. . Therefore, as shown in FIG. 11, the center of the magnetosensitive part surface 91 on which the four-terminal magnetoresistive element 46 is formed coincides with the center of the magnet surface 10a, and the magnetosensitive part having a surface area smaller than the surface area of the magnet surface 10a. Even if the surface 91 is disposed within the surface area of the magnet surface 10a, the magnetoresistive elements 41a and 41b (or 41c and 41d) are symmetrical with respect to the center of the magnetosensitive part surface 91 of the chip 9. They are not arranged, nor are they arranged symmetrically with respect to the center of the magnet surface 10a.
In the case of the four-terminal magnetoresistive element 46 as shown in FIG. 11 above, especially when the lateral distance B1 (= B2) is small, the magnetoresistive element is affected by the demagnetizing field at the end of the magnet surface 10a. A large difference is generated in the magnetic flux density of the magnetically sensitive portion surface 91 of 41a and 41b (or 41c and 41d). That is, the magnetic flux density of the magnetic sensitive surface 91 formed on the surfaces of the magnetoresistive elements 41a to 41d is not flattened. Accordingly, a difference occurs in the strength (magnetic flux density) of the magnetic field applied to the magnetoresistive elements 41a and 41b (or the magnetic field applied to 41c and 41d), so that the magnetoresistive elements 41a and 41b (or 41c and 41d) differs, and the potential of the output terminals A and B of the magnetoresistive element 46 deviates from half of the applied voltage (Vin / 2). That is, the offset voltage (deviation from Vin / 2) of the output signals A: B of the magnetoresistive element 46 becomes large.

次に縦距離Ａと横距離Ｂ１（＝Ｂ２）との関係を詳細に検証する。縦距離Ａを変えて、磁石表面１０ａ上の中心線Ｃ１（図１１参照）上における磁石端部からの距離Ｓとその距離Ｓの位置上における感磁部表面９１での磁束密度との関係を測定した結果を図２１に示した。図２８の折れ線グラフは、上から縦距離Ａを０ｍｍ、０．１ｍｍ、０．２ｍｍ、０．５ｍｍ、０．８ｍｍ、１．０ｍｍとした場合の結果を示したものである。
図２８から次のことがわかる。
縦距離Ａが０に近くても、磁石端部からの距離Ｓが０．２ｍｍ程度以上離れている位置の上に感磁部表面９１があれば感磁部表面９１上の磁束密度の変化がなくなることがわかる。縦距離Ａが０．１ｍｍ〜０．２ｍｍの場合、磁石端部からの距離Ｓが０．５ｍｍ程度以上離れている位置の上に感磁部表面９１があれば感磁部表面９１上の磁束密度の変化がほぼなくなることがわかる。縦距離Ａが０．５ｍｍ〜１．０ｍｍの場合、磁石端部からの距離Ｓが１．０ｍｍ程度以上離れている位置の上に感磁部表面９１があれば感磁部表面９１上の磁束密度の変化がほぼなくなることがわかる。即ち、縦距離Ａを小さくすれば、感磁部表面磁束密度を大きくでき、横距離Ｂ１（＝Ｂ２）を１．０ｍｍ程度以上とすれば、磁気抵抗素子４６や４７の感磁部表面９１での磁束密度を平坦化できる。
以上からして、凹部孔３０内に磁石表面１０ａ側を位置決め固定して、磁石表面１０ａの面領域内上に感磁部表面９１を位置させ、かつ、横距離Ｂ１（＝Ｂ２）を１．０ｍｍ以上、縦距離Ａを０<Ａ≦１ｍｍに設定すれば、磁気抵抗素子４６や４７の感磁部表面９１での磁束密度を平坦化でき、かつ、この磁束密度を大きくできて出力信号振幅を大きくとれる磁性体検出器１が得られることがわかる。
特に、図６；７に示すような４端子磁気抵抗素子４６の場合は磁石端部１０ｘ；１０ｙの影響を受けやすく、感磁部表面９１での磁束密度を平坦にすることが望ましいが、これは、縦距離Ａに対応して横距離Ｂ１（＝Ｂ２）を上述したように設定することで可能となる。 Next, the relationship between the vertical distance A and the horizontal distance B1 (= B2) will be verified in detail. By changing the longitudinal distance A, the relationship between the distance S from the magnet end on the center line C1 (see FIG. 11) on the magnet surface 10a and the magnetic flux density on the magnetic sensitive surface 91 on the position of the distance S is shown. The measurement results are shown in FIG. The line graph in FIG. 28 shows the results when the vertical distance A is 0 mm, 0.1 mm, 0.2 mm, 0.5 mm, 0.8 mm, and 1.0 mm from the top.
The following can be understood from FIG.
Even if the longitudinal distance A is close to 0, if the magnetic sensitive part surface 91 is located at a position where the distance S from the magnet end is about 0.2 mm or more, the magnetic flux density on the magnetic sensitive part surface 91 changes. I understand that it will disappear. When the vertical distance A is 0.1 mm to 0.2 mm, the magnetic flux on the magnetic sensitive part surface 91 if the magnetic sensitive part surface 91 is on a position where the distance S from the magnet end is about 0.5 mm or more. It can be seen that there is almost no change in density. When the vertical distance A is 0.5 mm to 1.0 mm, the magnetic flux on the magnetic sensitive part surface 91 if the magnetic sensitive part surface 91 is located at a position where the distance S from the magnet end is about 1.0 mm or more. It can be seen that there is almost no change in density. That is, if the vertical distance A is reduced, the magnetic flux density on the surface of the magnetic sensitive part can be increased. If the lateral distance B1 (= B2) is set to about 1.0 mm or more, the magnetic sensitive element surface 91 of the magnetoresistive elements 46 and 47 Can be flattened.
From the above, the magnet surface 10a side is positioned and fixed in the recess hole 30, the magnetically sensitive portion surface 91 is positioned on the surface area of the magnet surface 10a, and the lateral distance B1 (= B2) is set to 1. If the longitudinal distance A is set to 0 <A ≦ 1 mm at 0 mm or more, the magnetic flux density on the magnetosensitive element surface 91 of the magnetoresistive elements 46 and 47 can be flattened, and the magnetic flux density can be increased to increase the output signal amplitude. It can be seen that a magnetic substance detector 1 can be obtained.
In particular, in the case of a four-terminal magnetoresistive element 46 as shown in FIGS. 6 and 7, it is easy to be affected by the magnet end portions 10x and 10y, and it is desirable to flatten the magnetic flux density on the magnetic sensitive portion surface 91. Is possible by setting the lateral distance B1 (= B2) in correspondence with the longitudinal distance A as described above.

尚、図８；図９に示すような２個の磁気抵抗素子４０ａ；４０ｂを直列に接続した３端子磁気抵抗素子４７を１個備えた構成の磁性体検出器１の場合は、磁気抵抗素子４０ａと４０ｂとを感磁部表面端部９１ｘ；９１ｙ間の中心線Ｃ２に対して対称に配置できるので、感磁部表面９１における磁束密度は必ずしも平坦である必要はなく、左右の横距離Ｂ１（＝Ｂ２）を同じにすれば、オフセット電圧のずれは基本的に無くすことができる。よって、横距離Ｂ１（＝Ｂ２）は小さくてもよく、０ｍｍに近くてもよい。ただし、感磁部表面９１より面積の大きい磁石表面１０ａと感磁部表面９１との中心を一致させてこれらを平行に対向させ、感磁部表面９１の上側から見て感磁部表面９１が磁石表面１０ａの面領域内に位置するように磁石表面１０ａと感磁部表面９１とを互いに位置決めする必要がある。しかしながらこの場合でも出力信号振幅を大きくとるためには縦距離Ａを小さくしたほうがよい。   8; FIG. 9, in the case of the magnetic substance detector 1 having one three-terminal magnetoresistive element 47 in which two magnetoresistive elements 40a; 40b are connected in series, the magnetoresistive element Since 40a and 40b can be arranged symmetrically with respect to the center line C2 between the magnetic sensing portion surface end portions 91x and 91y, the magnetic flux density on the magnetic sensing portion surface 91 does not necessarily have to be flat, and the lateral distance B1 on the left and right If (= B2) is made the same, the offset voltage can be basically eliminated. Therefore, the lateral distance B1 (= B2) may be small or close to 0 mm. However, the centers of the magnet surface 10a having a larger area than the magnetic sensing surface 91 and the magnetic sensing surface 91 are made to coincide with each other so as to face each other in parallel, and the magnetic sensing surface 91 is seen from above the magnetic sensing surface 91. It is necessary to position the magnet surface 10a and the magnetic sensing portion surface 91 relative to each other so as to be located within the surface area of the magnet surface 10a. However, even in this case, it is better to reduce the vertical distance A in order to increase the output signal amplitude.

磁性体検出器１の磁気抵抗素子を形成する化合物半導体薄膜１３は高い磁気抵抗変化率を得るためにできるだけ高い電子移動度を有していることが好ましく、上述したＩｎＳｂの他、ＩｎＡｓ、ＩｎＡｓｘＳｂ１−ｘ、ＩｎｘＧａ１−ｘＳｂ、ＩｎｘＧａ１−ｘＡｓ（０≦ｘ≦１）が好ましい材料である。
絶縁性基板１２は、表面が絶縁性の若しくは絶縁化された半導体の絶縁層を持つ半導体基板が好ましい。半導体基板の中でもＧａＡｓ、ＩｎＰ、ＧａＰなどの基板を用いると特に化合物半導体薄膜１３の高い電子移動度が得られるようになり、特に好ましいものとなる。
化合物半導体薄膜１３中にキャリアを増加させるためのドナー不純物を添加する方法としては、化合物半導体薄膜１３を形成する際に同時に行ってもよいが、成膜後にイオン注入法を用いて打ち込んでもよい。使用するドナー不純物は、例えば、ＩｎＳｂやＩｎＡｓのようなIII−Ｖ族化合物半導体の場合は、Ｃ、Ｓｉ、Ｇｅ、ＳｎのようなIＶ族元素やＳ、Ｓｅ、Ｔｅに代表されるＶI族元素を添加するとよい。その中でも特にＳｉ、Ｓｎが好ましい。
上記では、ウェットエッチング法を用いて動作層のエッチングを行った例を紹介したが、イオンミリングや反応性イオンエッチング法のドライエッチングによってメサエッチングを行ってもよい。尚、ウェットエッチングによって所望の形状にＩｎＳｂ薄膜をメサエッチングすることが多いが、ウェットエッチングは膜厚方向のエッチングともに、膜厚方向とは垂直方向のサイドエッチングが進む。膜厚が厚過ぎると、膜厚方向のエッチングは終了する時点ではサイドエッチングもかなり進むため、素子抵抗値の設計値と実際の素子抵抗値がずれるだけでなく、素子抵抗値の個体差も大きくなる。そのため、化合物半導体薄膜の膜厚は０．１〜４．０μｍに設定することが好ましい。 The compound semiconductor thin film 13 forming the magnetoresistive element of the magnetic detector 1 preferably has as high an electron mobility as possible in order to obtain a high magnetoresistance change rate. In addition to InSb described above, InAs, InAs x Sb 1-x, in x Ga 1-x Sb, in x Ga 1-x as (0 ≦ x ≦ 1) is a preferred material.
The insulating substrate 12 is preferably a semiconductor substrate having a semiconductor insulating layer whose surface is insulative or insulated. Among the semiconductor substrates, use of a substrate such as GaAs, InP, or GaP makes it possible to obtain particularly high electron mobility of the compound semiconductor thin film 13, which is particularly preferable.
As a method of adding a donor impurity for increasing carriers in the compound semiconductor thin film 13, it may be performed simultaneously with the formation of the compound semiconductor thin film 13, or may be performed using an ion implantation method after film formation. For example, in the case of a III-V compound semiconductor such as InSb or InAs, the donor impurity to be used is an IV group element such as C, Si, Ge, or Sn, or a VI group element represented by S, Se, or Te. May be added. Of these, Si and Sn are particularly preferable.
In the above, an example in which the operation layer is etched using the wet etching method has been introduced. However, the mesa etching may be performed by dry milling such as ion milling or reactive ion etching. In many cases, the InSb thin film is mesa-etched into a desired shape by wet etching. In wet etching, both the etching in the film thickness direction and the side etching in the direction perpendicular to the film thickness direction proceed. If the film thickness is too thick, side etching proceeds considerably when the etching in the film thickness direction is completed. Therefore, not only does the design value of the element resistance value deviate from the actual element resistance value, but also the individual difference in element resistance value is large. Become. Therefore, the film thickness of the compound semiconductor thin film is preferably set to 0.1 to 4.0 μm.

電極１５に用いられる電極材料は、Ｃｕ単層やＴｉ／Ａｕ、Ｎｉ／Ａｕ、Ｃｒ／Ｃｕ、Ｃｕ／Ｎｉ／Ａｕ、Ｔｉ／Ａｕ／Ｎｉ、Ｃｒ／Ａｕ／Ｎｉ、Ｃｒ／Ｎｉ／Ａｕ／Ｎｉのような積層としてもよい。この電極材料は、作製した素子の使用される動作条件と環境条件に耐えられる材質であれば、どのような材料を用いてもかまわない。また、電極を形成する方法としては、電子ビーム蒸着や抵抗加熱蒸着といった一般的な真空蒸着法や、スパッタ法やメッキ法によって形成してもよい。また、電極形成後に電極と薄膜動作層とのオーミック接触性を良好にするために、急昇温熱アニール（ＲＴＡ）法を用いて熱処理することも好ましい。
また、磁性体検出器は、磁界によって抵抗値が変化する磁気抵抗素子を形成する化合物半導体薄膜が、結晶粒界を有しないＩｎＳｂ単結晶薄膜で形成されたので、感度が高くSN比の良い磁気抵抗素子を形成できる。 The electrode material used for the electrode 15 is a Cu single layer, Ti / Au, Ni / Au, Cr / Cu, Cu / Ni / Au, Ti / Au / Ni, Cr / Au / Ni, Cr / Ni / Au / Ni. It is good also as such lamination | stacking. The electrode material may be any material as long as it can withstand the operating conditions and environmental conditions in which the manufactured element is used. Moreover, as a method for forming the electrode, it may be formed by a general vacuum vapor deposition method such as electron beam vapor deposition or resistance heating vapor deposition, a sputtering method or a plating method. In addition, in order to improve the ohmic contact between the electrode and the thin film operation layer after the electrode is formed, it is also preferable to perform a heat treatment using a rapid temperature increase annealing (RTA) method.
In the magnetic detector, since the compound semiconductor thin film that forms the magnetoresistive element whose resistance value changes depending on the magnetic field is formed of an InSb single crystal thin film having no crystal grain boundary, it has high sensitivity and good SN ratio. A resistance element can be formed.

本発明の最良形態による磁性体検出器の縦断面図。The longitudinal section of the magnetic substance detector by the best form of the present invention. 最良形態の磁性体検出器に用いる半導体パッケージの斜視図。The perspective view of the semiconductor package used for the magnetic substance detector of the best form. 最良形態の半導体パッケージの縦断面図。The longitudinal cross-sectional view of the semiconductor package of the best form. 最良形態の磁性体検出器の構成部品を分解して示した分解斜視図。The disassembled perspective view which decomposed | disassembled and showed the component of the magnetic substance detector of the best form. （ａ）は最良形態のチップの断面図、（ｂ）は最良形態のリードフレームの平面図、（ｃ）は最良形態のリードフレームのアイランド上に４端子磁気抵抗素子を備えたチップを搭載した状態を示す平面図。(A) is a cross-sectional view of the best mode chip, (b) is a plan view of the best mode lead frame, and (c) is a chip equipped with a four-terminal magnetoresistive element on the island of the best mode lead frame. The top view which shows a state. 最良形態の４端子磁気抵抗素子を備えたチップの平面図。The top view of the chip | tip provided with the 4-terminal magnetoresistive element of the best form. 最良形態の４端子磁気抵抗素子の等価回路図。The equivalent circuit diagram of the 4-terminal magnetoresistive element of the best form. 最良形態の３端子磁気抵抗素子チップを備えたチップの平面図。The top view of the chip | tip provided with the 3 terminal magnetoresistive element chip | tip of the best form. 最良形態の３端子磁気抵抗素子の等価回路図。The equivalent circuit diagram of the best three-terminal magnetoresistive element. 最良形態の磁性体検出器のシミュレートに用いた永久磁石の斜視図。The perspective view of the permanent magnet used for simulating the magnetic substance detector of the best form. 最良形態の磁性体検出器における磁気抵抗素子の感磁部と磁石表面との位置関係を磁気抵抗素子の感磁部側から見た平面図。The top view which looked at the positional relationship of the magnetic sensitive part of a magnetoresistive element and the magnet surface in the magnetic substance detector of the best form from the magnetic sensitive part side of the magnetoresistive element. 最良形態の磁性体検出器における縦距離Ａと感磁部表面の磁束密度との関係を示したグラフ。The graph which showed the relationship between the longitudinal distance A and the magnetic flux density of the surface of a magnetic sensing part in the magnetic substance detector of the best form. 最良形態の磁性体検出器と検出対象磁性体としての歯車との位置関係を示した図。The figure which showed the positional relationship of the magnetic body detector of the best form, and the gearwheel as a detection object magnetic body. 最良形態の磁性体検出器における感磁部表面と歯車との間の距離と信号出力振幅との関係を示したグラフ。The graph which showed the relationship between the distance between the magnetic-sensitive part surface and gearwheel in the magnetic substance detector of the best form, and a signal output amplitude. 最良形態の磁性体検出器における縦距離と信号出力振幅との関係を示したグラフ。The graph which showed the relationship between the vertical distance and signal output amplitude in the magnetic substance detector of the best form. 最良形態の半導体パッケージの他の例を示す縦断面図。The longitudinal cross-sectional view which shows the other example of the semiconductor package of the best form. 最良形態の磁性体検出器における磁気抵抗素子の作製プロセスフローを示す図。The figure which shows the preparation process flow of the magnetoresistive element in the magnetic substance detector of the best form. 最良形態の磁性体検出器における磁気抵抗素子の磁気抵抗素子の抵抗値と磁束密度の関係を示すグラフ。The graph which shows the relationship between the resistance value of the magnetoresistive element of a magnetoresistive element and magnetic flux density in the magnetic substance detector of the best form. 最良形態の磁性体検出器における磁気抵抗素子の磁気抵抗素子の磁気抵抗変化率ΔＲ／Ｒ０と磁束密度の関係を示すグラフ。The graph which shows the relationship between magnetic resistance change rate (DELTA) R / R0 of the magnetoresistive element of the magnetoresistive element in the magnetic substance detector of the best form, and magnetic flux density. 本発明の他例１による磁性体検出器の縦断面図。The longitudinal cross-sectional view of the magnetic body detector by the other example 1 of this invention. 他例１による磁性体検出器の半導体パッケージの縦断面図。The longitudinal cross-sectional view of the semiconductor package of the magnetic body detector by the other example 1. FIG. 他例１による磁性体検出器の半導体パッケージの底面図。The bottom view of the semiconductor package of the magnetic body detector by the other example 1. FIG. 他例１による磁性体検出器のプリント配線基板の平面図。The top view of the printed wiring board of the magnetic body detector by the other example 1. FIG. 他例１による磁性体検出器のプリント配線基板の磁石通し孔に磁石を通した状態の平面図。The top view of the state which passed the magnet through the magnet through-hole of the printed wiring board of the magnetic body detector by the other example 1. FIG. 本発明の他例２による磁性体検出器の研磨前の半導体パッケージを示す縦断面図。The longitudinal cross-sectional view which shows the semiconductor package before grinding | polishing of the magnetic body detector by the other example 2 of this invention. 他例２による磁性体検出器の半導体パッケージを示す縦断面図。The longitudinal cross-sectional view which shows the semiconductor package of the magnetic body detector by the other example 2. FIG. 他例４による磁性体検出器の半導体パッケージを示す縦断面図。The longitudinal cross-sectional view which shows the semiconductor package of the magnetic body detector by the other example 4. FIG. 本発明の他例５の磁性体検出器による横距離と縦距離と感磁部表面の磁束密度との関係を示したグラフ。The graph which showed the relationship between the lateral distance and longitudinal distance by the magnetic body detector of the other example 5 of this invention, and the magnetic flux density of the magnetic sensing part surface. 従来の磁性体検出器を示す縦断面図。The longitudinal cross-sectional view which shows the conventional magnetic body detector. 磁気抵抗素子の磁束密度と磁気抵抗変化率との関係を示すグラフ。The graph which shows the relationship between the magnetic flux density of a magnetoresistive element, and a magnetoresistive change rate. 従来の磁性体検出器における縦距離の説明図。Explanatory drawing of the longitudinal distance in the conventional magnetic body detector.

符号の説明Explanation of symbols

１ 磁性体検出器、２ ケース、３ 磁気検出体、４；２５ 樹脂、７ 金属板、
８ 半導体パッケージ、９ チップ、１０ 永久磁石、１０ａ 磁石表面、
１１ ホルダ、１３ 化合物半導体薄膜、２０ リードフレーム、２１ アイランド、
２４ 外部接続リード、３０ 磁石位置決め凹部孔（凹部孔）、３０ａ 磁石位置決め凹部孔の底面（感磁部の下に位置する構成部分の除去された裏面）、
３２ 磁石保持孔、３３ 外部接続リード保持孔、
４０ａ；４０ｂ、４１ａ〜４１ｄ 半導体磁気抵抗素子、
４６ ４端子磁気抵抗素子、４７ ３端子磁気抵抗素子、９０ 感磁部、
９１ 感磁部表面、Ａ 縦距離（感磁部表面と磁石表面との間の距離）。 1 Magnetic detector, 2 Case, 3 Magnetic detector, 4; 25 Resin, 7 Metal plate,
8 semiconductor package, 9 chip, 10 permanent magnet, 10a magnet surface,
11 Holder, 13 Compound semiconductor thin film, 20 Lead frame, 21 Island,
24 external connection lead, 30 magnet positioning recess hole (recess hole), 30a bottom surface of magnet positioning recess hole (removed back surface of the component located under the magnetic sensing part),
32 magnet holding hole, 33 external connection lead holding hole,
40a; 40b, 41a to 41d semiconductor magnetoresistive elements,
46 4-terminal magnetoresistive element, 47 3-terminal magnetoresistive element, 90 magnetosensitive part,
91 Sensitive part surface, A Longitudinal distance (distance between the sensitive part surface and the magnet surface).

Claims (20)

感磁部を形成する半導体磁気抵抗素子と、前記感磁部の裏側に配置された磁石とを備え、感磁部表面と磁石表面とが互いに平行に配置された磁性体検出器において、前記感磁部表面が前記磁石表面の面領域内上に配置され、かつ、前記感磁部表面と前記磁石表面との間の距離Ａが０<Ａ≦１ｍｍに設定されたことを特徴とする磁性体検出器。   A magnetic material detector comprising a semiconductor magnetoresistive element forming a magnetic sensitive part and a magnet disposed on the back side of the magnetic sensitive part, wherein the magnetic sensitive part surface and the magnet surface are arranged in parallel to each other. A magnetic body characterized in that the surface of the magnetic part is disposed in the surface area of the surface of the magnet, and the distance A between the surface of the magnetically sensitive part and the surface of the magnet is set to 0 <A ≦ 1 mm Detector. 感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージと、該半導体パッケージの裏側に配置された磁石とを備え、感磁部表面と該感磁部表面に対向する磁石表面とが互いに平行に配置された磁性体検出器において、前記感磁部表面が前記磁石表面の面領域内上に配置され、かつ、前記感磁部表面と前記磁石表面との間の距離Ａが０<Ａ≦１ｍｍに設定されたことを特徴とする磁性体検出器。   A semiconductor package in which a chip having a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with a resin, and a magnet disposed on the back side of the semiconductor package, the magnetic sensitive part surface and the magnetic sensitive part surface In the magnetic detector in which the opposing magnet surfaces are arranged in parallel to each other, the surface of the magnetic sensitive portion is arranged in a surface area of the surface of the magnet, and between the surface of the magnetic sensitive portion and the surface of the magnet. The distance A is set to 0 <A ≦ 1 mm. 感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージと、該半導体パッケージの裏側に配置された磁石とを備え、感磁部表面と該感磁部表面に対向する磁石表面とが互いに平行に配置された磁性体検出器において、前記半導体パッケージが裏側に前記感磁部の下に位置する構成部分の除去された裏面を備え、該裏面と前記磁石表面とが互いに接触されて、前記感磁部表面が磁石表面の面領域内上に配置され、かつ、前記感磁部表面と前記磁石表面との間の距離Ａが０<Ａ≦１ｍｍに設定されたことを特徴とする磁性体検出器。   A semiconductor package in which a chip having a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with a resin, and a magnet disposed on the back side of the semiconductor package, the magnetic sensitive part surface and the magnetic sensitive part surface In the magnetic detector in which the opposing magnet surfaces are arranged in parallel to each other, the semiconductor package includes a back surface from which the constituent portions located below the magnetic sensing portion are removed on the back side, and the back surface and the magnet surface Are brought into contact with each other, the surface of the magnetic sensitive part is disposed within the surface area of the magnet surface, and the distance A between the surface of the magnetic sensitive part and the magnet surface is set to 0 <A ≦ 1 mm A magnetic substance detector. 前記感磁部の下に位置する構成部分の除去された裏面が、凹部孔の底面により形成され、前記凹部孔内に磁石表面側が挿入されて前記磁石が位置決めされたことを特徴とする請求項３に記載の磁性体検出器。   The removed back surface of the component located under the magnetic sensing portion is formed by the bottom surface of the recess hole, and the magnet surface is inserted into the recess hole to position the magnet. 3. The magnetic substance detector according to 3. 前記感磁部の下に位置する構成部分の除去された裏面が、研磨された平坦面により形成されたことを特徴とする請求項３に記載の磁性体検出器。   The magnetic body detector according to claim 3, wherein the back surface from which the constituent portion located under the magnetic sensing portion is removed is formed by a polished flat surface. 前記チップがリードフレーム上にダイボンドされ、前記リードフレームが前記チップの感磁部表面とは反対方向に折曲されて外部接続リードとして形成されたことを特徴とする請求項２ないし請求項５のいずれかに記載の磁性体検出器。   6. The chip according to claim 2, wherein the chip is die-bonded on a lead frame, and the lead frame is bent in a direction opposite to a surface of the magnetic sensing portion of the chip to form an external connection lead. The magnetic substance detector in any one. 前記チップがリードフレーム上にダイボンドされ、前記半導体パッケージの裏面に露出させた前記リードフレームと当該リードフレームとは別体の外部接続リードとがプリント配線基板を介して電気的に接続され、前記プリント配線基板が前記磁石表面を前記半導体パッケージの裏面に密着させるための貫通孔を備えたことを特徴とする請求項２ないし請求項５のいずれかに記載の磁性体検出器。   The chip is die-bonded on a lead frame, and the lead frame exposed on the back surface of the semiconductor package is electrically connected to an external connection lead separate from the lead frame via a printed wiring board. 6. The magnetic detector according to claim 2, wherein the wiring board includes a through hole for bringing the magnet surface into close contact with the back surface of the semiconductor package. 前記半導体パッケージと前記磁石とホルダとで形成された磁気検出体がケース内に樹脂で封止され、前記ホルダが磁石保持孔と外部接続リード保持孔とを備え、前記磁石が磁石保持孔に挿入され、前記外部接続リードが前記外部接続リード保持孔に挿入されて、前記磁石と前記外部接続リードとが前記ホルダにより保持された状態で前記磁気検出体が封止されたことを特徴とする請求項６又は請求項７に記載の磁性体検出器。   A magnetic detector formed of the semiconductor package, the magnet, and the holder is sealed with resin in a case, the holder includes a magnet holding hole and an external connection lead holding hole, and the magnet is inserted into the magnet holding hole. The magnetic detector is sealed in a state where the external connection lead is inserted into the external connection lead holding hole and the magnet and the external connection lead are held by the holder. Item 8. The magnetic substance detector according to item 6 or 7. 前記感磁部表面と対向する前記ケースの表面が金属板により形成され、当該金属板の厚さが０．５ｍｍ以下に設定されたことを特徴とする請求項８に記載の磁性体検出器。   The magnetic body detector according to claim 8, wherein the surface of the case facing the surface of the magnetic sensitive part is formed of a metal plate, and the thickness of the metal plate is set to 0.5 mm or less. 前記感磁部表面の面中心と前記磁石表面の面中心とを一致させたことを特徴とする請求項１ないし請求項９のいずれかに記載の磁性体検出器。   The magnetic body detector according to any one of claims 1 to 9, wherein a surface center of the surface of the magnetic sensing portion is matched with a surface center of the surface of the magnet. 前記感磁部表面における磁束密度を、磁気抵抗効果により感磁部の抵抗値が５０％以上増加する磁束密度としたことを特徴とする請求項１ないし請求項１０のいずれかに記載の磁性体検出器。   11. The magnetic body according to claim 1, wherein the magnetic flux density on the surface of the magnetic sensitive part is a magnetic flux density at which a resistance value of the magnetic sensitive part is increased by 50% or more due to a magnetoresistive effect. Detector. 前記磁石がＳｍＣｏにより形成された永久磁石であることを特徴とする請求項１ないし請求項１１のいずれかに記載の磁性体検出器。   The magnetic material detector according to any one of claims 1 to 11, wherein the magnet is a permanent magnet formed of SmCo. 前記半導体磁気抵抗素子が化合物半導体薄膜により形成され、当該化合物半導体薄膜にはドナー不純物がドープして有ることを特徴とする請求項１ないし請求項１２のいずれかに記載の磁性体検出器。   13. The magnetic substance detector according to claim 1, wherein the semiconductor magnetoresistive element is formed of a compound semiconductor thin film, and the compound semiconductor thin film is doped with a donor impurity. 前記ドナー不純物がＳｉ、Ｓｎ、Ｓ、Ｓｅ、Ｔｅ、Ｇｅ、Ｃであることを特徴とする請求項１３に記載の磁性体検出器。   The magnetic substance detector according to claim 13, wherein the donor impurity is Si, Sn, S, Se, Te, Ge, C. 前記化合物半導体薄膜は結晶粒界を有しない単結晶ＩｎＳｂ薄膜であることを特徴とする請求項１ないし請求項１４のいずれかに記載の磁性体検出器。   15. The magnetic detector according to claim 1, wherein the compound semiconductor thin film is a single crystal InSb thin film having no crystal grain boundary. 前記単結晶ＩｎＳｂ薄膜の厚さが０．１〜４．０μｍであることを特徴とする請求項１５に記載の磁性体検出器。   The magnetic substance detector according to claim 15, wherein the single crystal InSb thin film has a thickness of 0.1 to 4.0 μm. 感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージにおいて、感磁部表面に垂直磁界を加える磁石が配置される裏側に前記感磁部の下に位置する構成部分の除去された裏面を備えたことを特徴とする半導体パッケージ。   In a semiconductor package in which a chip having a semiconductor magnetoresistive element forming a magnetic sensitive part is sealed with a resin, the chip is positioned under the magnetic sensitive part on the back side where a magnet for applying a vertical magnetic field is disposed on the surface of the magnetic sensitive part A semiconductor package comprising a back surface from which components are removed. 前記感磁部の下に位置する構成部分の除去された裏面が、凹部孔の底面により形成されたことを特徴とする請求項１７に記載の半導体パッケージ。   18. The semiconductor package according to claim 17, wherein the back surface from which the constituent portion located under the magnetic sensing portion is removed is formed by a bottom surface of the recess hole. 前記感磁部の下に位置する構成部分の除去された裏面が、研磨された平坦面により形成されたことを特徴とする請求項１７に記載の半導体パッケージ。   18. The semiconductor package according to claim 17, wherein a back surface from which a component located under the magnetic sensing portion is removed is formed by a polished flat surface. 感磁部を形成する半導体磁気抵抗素子を備えたチップが樹脂により封止された半導体パッケージにおいて、チップをダイボンドしたリードフレームを、感磁部表面に垂直磁界を加える永久磁石の配置される裏面に露出させたことを特徴とする半導体パッケージ。   In a semiconductor package in which a chip having a semiconductor magnetoresistive element forming a magnetic sensing portion is sealed with resin, a lead frame die-bonded to the chip is placed on the back surface where a permanent magnet that applies a perpendicular magnetic field to the surface of the magnetic sensing portion is disposed. A semiconductor package characterized by being exposed.
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