JP2005308652A - Probe for probe microscope and its manufacturing method, probe microscope, needle-shaped body and its manufacturing method, and electronic element and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a probe for a probe microscope, for highly accurately performing analysis of a charge density wave nano structure, structure determination on biomacromolecules, etc. by actively utilizing macroscopic quantum phase information on a charge density wave, and moreover, suitably used for a downsized charge density wave quantum phase microscope, etc. <P>SOLUTION: A material film 22 is deposited on a surface of a conical body 21 made of Si, etc. An electronic beam 23 is irradiated to a part a prescribed distance away from an end part of the conical body 21 along its side surface on condition that the conical body 21 is kept from melting. This causes a needle crystal 24 to grow with the material film 22 used, thereby manufacturing the probe for a probe microscope. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a probe microscope probe and a manufacturing method thereof, a probe microscope, a needle-like body and a manufacturing method thereof, an electronic element and a manufacturing method thereof, for example, a novel device using a charge density wave nanostructure and a living body It is suitable for use in determining the structure of a polymer, and further in semiconductor devices.

There are only three examples of superconductivity, charge density wave (CDW), and quantum Hall liquid that cause conduction electrons in a conductor such as metal to be in a macroscopic quantum coherent state. It is no exaggeration to say that the two are the former without any external operation. In particular, since a CDW body exhibits a phase transition at room temperature, an element and a measurement device using a CDW macroscopic quantum phase have a potential to surpass semiconductor technology. Recently, a CDW 3-terminal electric field / current driving element, a memory element in a femtosecond region, and the like have been devised under such a background, and new effects have been demonstrated as new quantum functional elements (for example, Non-Patent Document 1).
Appl. Phys. Lett. 80, 871 (2002)

Tools for performing the evaluation using the CDW nanostructure are considered indispensable. However, as far as the present inventors know, there have been no specific proposals for effective tools. There is no actual situation.
Therefore, the problem to be solved by the present invention is that the macroscopic quantum phase information of the charge density wave is actively used to analyze the charge density wave nanostructure and determine the structure of the biopolymer with high accuracy. An object of the present invention is to provide a probe microscope such as a charge density wave quantum phase microscope that can be performed in a small size, a probe microscope probe suitable for use in the probe microscope, and a method for manufacturing the probe microscope.
Another problem to be solved by the present invention is, more generally, to provide various needle-like bodies including the probe microscope probe described above, a manufacturing method thereof, an electronic device, and a manufacturing method thereof.

  In order to solve the above-mentioned problems, the present inventors have actively created theoretically designed CDW nanostructures from the standpoint of material science, and the electrical / electricity generated when these materials are subjected to external stimuli. We thought about developing applications while clarifying changes in elastic and optical properties. In particular, the CDW's macroscopic quantum phase information was actively used to develop a compact and high-performance microscope. This is not only an indispensable tool for fabrication of devices using CDW nanostructures, but also has made significant progress in the determination of the structure of biopolymers typified by DNA and the development of quantum computers using quantum phase information. It can be brought.

On the other hand, CDW is pinned by the influence of impurities and sample edges, but when an electric field higher than the threshold electric field is applied, sliding occurs and contributes to electrical conduction. This CDW sliding is a collective translational movement of electrons and is a phenomenon characteristic of low-dimensional conductors. When the CDW slides in the pinning potential, an alternating current having a frequency proportional to the direct current component carried by the CDW, that is, a narrow band signal (NBS) (narrow band noise (NBN)). Called) occurs. That is, if the excess current portion that flows when an electric field equal to or higher than the threshold electric field is applied is J _CDW , and the above NBS frequency is ν _NBS , ν _NBS ∝ J _CDW . Therefore, the change in the threshold electric field can be measured with high accuracy by measuring the frequency ν _NBS of the _NBS . Since this threshold electric field is changed by slight stress generated in the CDW crystal, a high-precision microscope having a function exceeding that of an atomic force microscope (AFM) can be created by simply attaching an electrode to the CDW needle and measuring NBS. be able to. For example, if a needle-like CDW crystal having a length of 100 nm is used, a microscope having a resolution of 1 pm can be realized with a frequency meter sensitivity of 1 Hz. Further, for example, in the AFM, the displacement of the probe of the cantilever is detected by irradiating the cantilever with laser light. However, this CDW microscope eliminates the need for such an optical system, and thus has a very small configuration. be able to. For this reason, for example, it has a great advantage that it can be directly introduced into a living body like an injection needle.

In addition, in a high purity and minute CDW needle crystal, whether the pinning force at both ends of the sample is strengthened or weakened is determined by the balance between the _CDW wavelength λ _CDW and the sample length. The threshold electric field oscillates as the wavelength λ _CDW changes due to the application of the gate voltage to the CDW needle crystal. This is exactly the same behavior as a superconducting quantum interferometer (SQUID), and is a kind of quantum interferometer that measures voltage. By detecting this change in the threshold electric field by NBS measurement, it is possible to make a highly accurate microscope for measuring the local electric field (charge).

  On the other hand, as a result of various experiments, the present inventors have found that when an acicular crystal is grown on the tip of a cone made of, for example, Si using irradiation of an energy beam such as an electron beam, the cone It is difficult to grow a needle-like crystal on the tip of the cone after the growth material is deposited on the surface of the cone, but it is difficult to grow the tip of the cone. It was found that when irradiated with a beam, a needle-like crystal can be easily grown at the tip. Further, as another method, the surface of the substrate is selectively irradiated with an energy beam such as an electron beam, and the substrate is recrystallized at the irradiated portion, so that the base crystal and the crystal are continuously formed. I also found that I can grow. A CDW probe microscope can be realized by growing a CDW needle crystal by these methods and using it as a probe. In addition, various probe microscopes can be realized by growing a needle-like crystal of another substance and using it as a probe. Further, by growing, for example, acicular semiconductor crystals by these methods, it is possible to make a minute semiconductor element.

The present invention has been devised based on the above examination.
That is, in order to solve the above problem, the first invention
The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. A probe microscope probe manufactured by growing a needle crystal using a raw material.

The second invention is
The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. A probe microscope probe manufacturing method characterized in that needle crystals are grown using a raw material.

The third invention is
The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. It is a probe microscope characterized by having a probe manufactured by growing a needle crystal using a raw material.

The fourth invention is:
By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, A probe microscope probe manufactured by growing a needle crystal using a growth material.

The fifth invention is:
By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, A probe microscope probe manufacturing method characterized in that needle crystals are grown using a growth material.

The sixth invention is:
By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, It is a probe microscope characterized by having a probe manufactured by growing a needle crystal using a growth material.

The seventh invention
The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A probe microscope probe produced by growing an acicular crystal using the first growth material and the second growth material by irradiating an energy beam under conditions.

The eighth invention
The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A probe microscope probe manufacturing method characterized in that an acicular crystal is grown using the first growth material and the second growth material by irradiating an energy beam under conditions.

The ninth invention
The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A probe microscope comprising a probe manufactured by growing an acicular crystal using the first growth material and the second growth material by irradiating an energy beam under conditions. .

  In the first to ninth inventions, a substrate made of a substance having a melting point high enough not to be softened when irradiated with an energy beam, for example, a melting point of 800 ° C. or higher is used. The cone-shaped substrate may be a cone-shaped substrate or a polygonal pyramid-shaped substrate such as a triangular pyramid shape or a quadrangular pyramid shape, as long as the cross-sectional area is reduced toward the tip at least. As the energy beam, for example, an electron beam, an ion beam, a laser beam, or the like can be used. As the laser beam, an excimer laser, a YAG laser, an Ar laser, or the like can be used. The cross-sectional shape of this energy beam is not particularly limited, and may be, for example, a circle, an ellipse, or a rectangle. When the substrate has a plurality of cone-shaped portions, the energy beam having a flat rectangular cross-sectional shape is used, and the plurality of cone-shaped portions are irradiated by irradiating the energy beam so as to extend over the plurality of cone-shaped portions. It is possible to grow acicular crystals collectively in the part. Such an energy beam having a flat rectangular cross-sectional shape can be easily obtained by shaping a laser beam using an optical system including a lens, for example. For the deposition or supply of the growth material, for example, a film forming method such as a vacuum evaporation method, a sputtering method, a chemical vapor deposition (CVD) method, a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method or the like. Any of these or combinations thereof can be used as appropriate. At the time of irradiation with an energy beam, generally, a temperature gradient of 10 ° C./μm or more and 100 ° C./μm or less exists between the irradiation site of the energy beam of the substrate and the tip with the tip as the low temperature side. The thickness of the acicular crystal is determined as necessary, but is generally 5 nm or more and 1 μm or less. In order to prevent oxidation and the like, the acicular crystal is preferably grown in a vacuum or in a hydrogen gas atmosphere.

When the probe microscope is a charge density wave quantum phase microscope, for example, MX _p (where M is at least one element selected from the group consisting of Ta and Nb, X is S, Se and At least one element selected from the group consisting of Te, 1.8 ≦ p ≦ 2.2), MX _q (where M is at least one element selected from the group consisting of Ta and Nb, X is S, At least one element selected from the group consisting of Se and Te, 2.7 ≦ q ≦ 3.3) or MX _r (where M is at least one element selected from the group consisting of Ta and Nb, X is At least one element selected from the group consisting of S, Se and Te, 3.6 ≦ r ≦ 4.4). Specific examples of MX _p include TaSe ₂ and TaS ₂ , and specific examples of MX _q include NbSe ₃ , NbS ₃ , and MX _r include NbTe ₄ . Depending on the use of the probe microscope, the acicular crystal may be made of a metal such as Ni or Cu or a superconducting substance (such as an oxide superconductor).

The tenth invention is
The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. It is a method for producing a needle-like body characterized in that a needle-like crystal is grown using a raw material.

The eleventh invention is
By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, It is a method for producing a needle-like body, characterized in that needle-like crystals are grown using a growth raw material.

The twelfth invention
The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. An acicular body manufacturing method characterized in that an acicular crystal is grown using the first growth raw material and the second growth raw material by irradiating an energy beam under conditions.

In the tenth to twelfth inventions, the acicular body includes acicular crystals used for the probe of the probe microscope, as well as those for various other uses, and the acicular crystal materials are also various. It may be.
In the tenth to twelfth inventions, what has been described in relation to the first to ninth inventions is valid as long as it is not contrary to the nature thereof.

The thirteenth invention
The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. A method of manufacturing an electronic device characterized in that needle crystals are grown using a raw material.

The fourteenth invention is
By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, A method of manufacturing an electronic device characterized in that needle crystals are grown using a growth material.

The fifteenth invention
The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A method of manufacturing an electronic device, wherein an acicular crystal is grown using the first growth material and the second growth material by irradiating an energy beam under conditions.

In the thirteenth to fifteenth inventions, the electronic element includes various elements such as a superconductor element, a ferroelectric element, and a magnetic element in addition to a semiconductor element.
In the thirteenth to fifteenth inventions, what has been described in relation to the first to ninth inventions is valid as long as it is not contrary to the nature thereof.

The sixteenth invention is
A probe microscope probe manufactured by irradiating a predetermined site on the surface of a substrate with an energy beam and growing needle crystals by recrystallization.

The seventeenth invention
A probe microscope probe manufacturing method characterized by irradiating an energy beam onto a predetermined portion of the surface of a substrate and growing a needle crystal by recrystallization.

The eighteenth invention
A probe microscope characterized by having a probe manufactured by irradiating a predetermined part of the surface of a substrate with an energy beam and growing a needle crystal by recrystallization.
The nineteenth invention
A method for producing a needle-like body, wherein an energy beam is irradiated to a predetermined portion of the surface of a substrate and a needle-like crystal is grown by recrystallization.

The twentieth invention is
An electronic device manufacturing method characterized in that an energy beam is irradiated to a predetermined portion of the surface of a substrate to grow needle crystals by recrystallization.
In the sixteenth to twentieth inventions, what has been described in relation to the first to fifteenth inventions is valid as long as it is not contrary to the nature thereof.

In the 1st-15th invention comprised as mentioned above, a needle-like crystal grows in a tip part by irradiating an energy beam to a part away from a tip part by a predetermined distance.
In the sixteenth to twentieth inventions, an acicular crystal grows by irradiating a predetermined portion of the surface of the substrate with an energy beam.

  According to the present invention, the macroscopic quantum phase information of the charge density wave can be actively used to analyze the charge density wave nanostructure and determine the structure of the biopolymer with high accuracy. A probe microscope such as a charge density wave quantum phase microscope that can be made compact can be realized. In addition, an electronic element such as a very small semiconductor element can be manufactured without using a lithography technique.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a CDW quantum phase microscope according to a first embodiment of the present invention.
As shown in FIG. 1, in this CDW quantum phase microscope, a probe 12 made of a CDW needle crystal is attached to the lower part of a piezoelectric controller 11 similar to a general scanning probe microscope. Thus, the probe 12 can be three-dimensionally scanned in the x, y, and z directions. As shown in FIG. 2, the probe 12 is provided with electrodes 13 and 14, and an external circuit including a power supply 15 and a frequency meter 16 is connected between the electrodes 13 and 14. The frequency meter 16 measures the frequency of the NBS, thereby measuring the change in the threshold electric field.

Next, a method of using this CDW quantum phase microscope will be described. Here, the case where the sample which consists of CDW nanostructure is used as an example is considered.
As shown in FIG. 1, a probe 12 is brought into contact with the surface of a sample 17 made of a CDW nanostructure and scanned. When the probe 12 comes into contact with the surface of the sample 17, the tip of the probe 12 is displaced, thereby causing stress on the probe 12. Due to this stress, the threshold electric field of the probe 12 changes, and thereby the frequency of the NBS flowing through the probe 12 changes. The change in the NBS frequency is converted into a surface image. Conversion to a surface image, in other words, visualization of the surface shape of an object, for example, includes visualization of an output of a frequency-voltage (current) converter or visualization of a control signal constituting feedback.

Another method of use will be described.
FIG. 3 shows the ion arrangement and CDW (charge density ρ (x)) of the sample 17 in the CDW state and the ion arrangement and CDW of the probe 12. ρ (x) is expressed by the following equation.
ρ (x) = ρ ₀ + ρ ₁ cos (Qx + φ)
Where x is a spatial coordinate in the one-dimensional axis direction, ρ ₁ is the amplitude of the charge density wave, Q is a wave vector (nesting vector), Q = 2k _F (k _F is the Fermi wave number), ρ ₀ = −en _e (n _e is the electron density) and φ is the phase.

At the contact point between the probe 12 and the sample 17, _assuming that the phase of CDW at the tip of the probe 12 is θ _p and the phase of CDW on the surface of the sample 17 is θ _s , θ _p −θ _s ∝V _th is established. . However, V _th is a voltage (threshold voltage) corresponding to the threshold electric field. When the tip of the probe 12 is displaced in accordance with scanning, θ _s changes accordingly, and this causes a change in θ _p −θ _s , thereby changing V _th and thus the threshold electric field. This is then measured as the change in NBS frequency.

Still another method of use will be described. This uses CDW tunneling.
The probe 12 is brought close to the surface of the sample 17 made of the CDW nanostructure and scanned. The phase of CDW at the tip of the probe 12 is θ _p , and the phase of CDW on the surface of the sample 17 is θ _s . When the tip of the probe 12 is displaced along with scanning, θ _s changes accordingly, and this causes a change of θ _p −θ _s , and the tunneling current flowing between the probe 12 and the sample 17 changes. This change in current or voltage is converted into a surface image.

Next, a method for producing the probe 12 made of a CDW needle crystal will be described.
First, as shown in FIG. 4A, a cone 21 is produced. The cone 21 is basically made of any material as long as it has a melting point that does not soften when grown to grow a CDW substance by electron beam irradiation, which will be described later, for example, 800 ° C. or higher. Specifically, for example, Si, Si ₃ N ₄ , SiO ₂ , diamond, alumina (sapphire), TaS ₂ , GaAs, Ni, Ta, or the like can be used.

Next, as shown in FIG. 4B, a source film 22 of a CDW material to be grown is formed on the surface of the cone 21 in a vacuum. For example, when TaSe ₂ is used as the CDW material, the source film 22 may be a TaSe ₂ film itself in addition to a double-layer film made of a Ta film and a Se film. The raw material film 22 is formed by any one of film formation methods such as vacuum deposition, sputtering, chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), and molecular beam epitaxy (MBE). Alternatively, they can be formed by appropriately combining them.

  Next, as shown in FIG. 4C, the electron beam 23 is applied to a point P that is a predetermined distance L, for example, about 1 to 3 μm away from the tip of the cone 21 thus formed with the raw material film 22 along the side surface. Irradiate at room temperature. The spot size of the electron beam 23 is, for example, about 50 nm to 1 μm. At this time, as shown in FIG. 4D, the CDW needle crystal 24 grows in the vicinity of the tip portion of the cone 21 instead of the irradiation portion of the electron beam 23. In general, when the electron beam 23 is irradiated, a temperature gradient of 10 to 100 ° C./μm exists between the irradiation portion of the electron beam 23 and the growth portion of the CDW needle crystal 24 with the tip portion as a low temperature side. In this case, the temperature of the irradiation site of the electron beam 23 is higher than the growth temperature of the CDW needle crystal 24, but the temperature of the growth site of the CDW needle crystal 24 is lower and becomes the most suitable temperature for growth. . The growth of the CDW needle crystal 24 is considered to be due to solid phase epitaxial growth. The CDW needle crystal 24 has a thickness (diameter) of, for example, about 5 nm to 1 μm, a length of, for example, 10 nm to 2 μm, or 10 to 500 nm, and an aspect ratio (length / thickness) of generally 100 or less. It is.

After a Ta film and a Se film are sequentially formed on the surface of the cone 21 made of Si by a vacuum deposition method, the tip of the cone 21 in which the raw material film 22 made of these Ta film and Se film is formed is formed on the side surface. Then, an electron beam 23 was irradiated to a site separated by L = 2 μm along. The thickness of the Ta film was 100 nm, and the thickness of the Se film was 200 nm. The spot size of the electron beam 23 was 1 μm, the acceleration voltage was 25 kV, the irradiation current amount was 1 × 10 ⁻⁷ μA, and the irradiation time was 30 minutes. The irradiation with the electron beam 23 was performed in a vacuum of 3 to 4 × 10 ⁻⁶ Torr. As a result, TaSe ₂ needle-like crystals having a diameter of about 0.4 μm grew to a length of about 1.5 μm at a site about 0.5 μm away from the tip. The scanning electron microscope (SEM) photograph is shown in FIG. In this case, the temperature of the cone 21 at the irradiation site of the electron beam 23 is considered to be about 800 to 850 ° C., and the temperature of the growth site is considered to be about 600 to 700 ° C.
When the surface of the TaSe ₂ sample was scanned using this TaSe ₂ needle crystal as the probe 12, a good atomic image as shown in FIG. 6 was obtained.
Next, when the surface of the TaSe ₂ sample was scanned by a CDW quantum phase microscope using the TaSe ₂ needle-like crystal on which the electrodes 13 and 14 were formed as the probe 12, a CDW image as shown in FIG. 7 was obtained. It was.

  As described above, according to the first embodiment, it is possible to realize a CDW quantum phase microscope that positively utilizes CDW macroscopic quantum phase information. This CDW quantum phase microscope is a highly accurate microscope having a function exceeding AFM. For example, if the probe 12 having a length of 100 nm is used, it is possible to obtain a resolution of 1 pm assuming that the sensitivity of the frequency meter 16 is 1 Hz. Further, unlike the AFM, this CDW quantum phase microscope does not require an optical system, and therefore has an advantage that it can be made compact accordingly.

Next explained is a CDW quantum phase microscope according to the second embodiment of the invention.
As shown in FIG. 8, in this CDW quantum phase microscope, a probe 32 made of Si or the like is attached to the lower end of the cantilever 31. The other end of the cantilever 31 is attached to a piezoelectric control device (not shown). A CDW needle crystal 33 is integrally provided on the cantilever 31. Electrodes 34 and 35 are provided at both ends of the CDW needle crystal 33, and an external circuit including a power source 36 and a frequency meter 37 is connected between the electrodes 34 and 35. The frequency meter 37 can measure the frequency of the NBS, thereby measuring the change in the threshold electric field.

Next, a method of using this CDW quantum phase microscope will be described. Here, the case where the sample which consists of CDW nanostructure is used as an example is considered.
As shown in FIG. 8, a probe 32 is brought into contact with the surface of a sample 17 made of a CDW nanostructure and scanned. When the probe 32 comes into contact with the surface of the sample 17, the tip of the probe 32 is displaced, and accordingly, the tip of the cantilever 31 is displaced, whereby the CDW needle crystal 32 on the cantilever 31 is expanded and contracted to generate stress. . This stress changes the threshold electric field of the CDW needle crystal 32, thereby changing the frequency of NBS flowing through the CDW needle crystal 33. The change in the NBS frequency is converted into a surface image.
Other than the above are the same as in the first embodiment.
According to the second embodiment, the same advantages as those of the first embodiment can be obtained.

Next explained is a CDW quantum interferometer according to the third embodiment of the invention. This CDW quantum interferometer is shown in FIG.
As shown in FIG. 9, in this CDW quantum interferometer, electrodes 42 and 43 are provided at both ends of a CDW needle crystal 41, and a power source 44 and a frequency meter 45 are included between these electrodes 42 and 43. An external circuit is connected. A gate electrode 46 is provided on the central side surface of the CDW needle crystal 41, and a gate voltage can be applied to the CDW needle crystal 41 by the gate electrode 46. And the frequency meter 45 can measure the frequency of the NBS, thereby measuring the change in the threshold electric field.

A method of using this CDW quantum interferometer will be described.
In the high purity and minute CDW needle crystal 41, whether the pinning force at both ends is strengthened or weakened is determined by the balance between the CDW wavelength λ _CDW and the length of the CDW needle crystal 41. The phase of CDW at one end on the electrode 42 side of the CDW needle crystal 41 is θ ₁ , and the phase of CDW at the other end on the electrode 43 side is θ ₂ . When the gate voltage V _g is applied to the CDW needle crystal 41 by the gate electrode 46, the wavelength λ _{CDW of the CDW} changes, and thereby the value of θ ₁ −θ ₂ changes (V _g ∝θ ₁ −θ _2). ), And the threshold voltage V _th and therefore the threshold electric field change with it. here,
V _th = 2V ₀ | cos (πC _g V _g / 2e) |
It is. However, V ₀ is a constant, C _g is a gate capacitance, and e is an elementary charge. By detecting this change in the threshold electric field by measuring the frequency of the NBS, the local electric field can be measured.
According to the third embodiment, it is possible to realize a CDW quantum interferometer that positively utilizes CDW macroscopic quantum phase information. According to this CDW quantum interferometer, a local electric field can be measured with high accuracy.

Next explained is a magnetic probe microscope according to the fourth embodiment of the invention.
In this magnetic probe microscope, a probe 12 made of a ferromagnetic material manufactured by the same method as in the first embodiment is used. Specifically, for example, a Ni film is formed on the surface of the cone 21 and irradiated with an electron beam 23 in the same manner as in the first embodiment, thereby growing a needle-like crystal made of Ni. Is the probe 12.
Others are the same as in the first embodiment.
According to the fourth embodiment, a magnetic probe microscope using a good probe 12 made of a ferromagnetic material can be realized. And it becomes possible to search a ferromagnetic material with high precision using this magnetic probe microscope.

Next explained is a diamagnetic probe microscope according to the fifth embodiment of the invention.
In this diamagnetic probe microscope, a probe 12 made of a diamagnetic material manufactured by the same method as in the first embodiment is used. Specifically, for example, a Cu film is formed on the surface of the cone 21 and irradiated with an electron beam 23 in the same manner as in the first embodiment, thereby growing a needle crystal made of Cu. Is the probe 12.
Others are the same as in the first embodiment.
According to the fifth embodiment, a diamagnetic probe microscope using a good probe 12 made of a diamagnetic material can be realized. And it becomes possible to search a diamagnetic material with high precision using this diamagnetic probe microscope.

Next explained is a multi-probe CDW quantum phase microscope according to the sixth embodiment of the invention.
As shown in FIG. 10, in this multi-probe CDW quantum phase microscope, a large number of cones 52 are formed in a two-dimensional array on a substrate 51, and the tip of each cone 52 is the same as in the first embodiment. A method in which a probe 53 made of a CDW needle crystal is formed by various methods is used.
Others are the same as in the first embodiment.
According to the sixth embodiment, it is possible to search a wide area of a CDW sample at once and with high accuracy.

Next explained is a multi-probe CDW quantum phase microscope according to the seventh embodiment of the invention.
As shown in FIG. 11, in this multi-probe CDW quantum phase microscope, a large number of blade-like portions 62 are formed on a substrate 61 in parallel with each other in stripes, and a probe 63 is provided at the tip of each blade-like portion 62. When formed in a one-dimensional array and viewed as a whole of the plurality of blade portions 62, a probe 63 arranged in a two-dimensional array is used. The formation of each probe 63 is performed by irradiating the electron beam 23 to a part away from the tip of the blade-like portion 62 in the same manner as in the first embodiment.
Others are the same as in the first embodiment.
According to the seventh embodiment, it is possible to search a wide area of a CDW sample at once and with high accuracy.

Next explained is a method for manufacturing a semiconductor device according to the eighth embodiment of the invention.
In the eighth embodiment, first, as shown in FIG. 12, for example, a large number of cones 72 are formed in a two-dimensional array on an n-type GaAs substrate 71, and a first end is formed at the tip of each cone 72. A needle-like semiconductor crystal 73 made of, for example, n-type GaAs is formed by the same method as in the embodiment.

Next, as shown in FIG. 13A, an insulating film 74 such as a SiO ₂ film is formed on the n-type GaAs substrate 71 to fill the height of the needle-shaped semiconductor crystal 73 to a substantially central portion.
Next, as shown in FIG. 13B, a Schottky electrode material is formed on the insulating film 74 so as to embed the periphery of the needle-like semiconductor crystal 73 to form a gate electrode 75.
Next, as shown in FIG. 13C, an insulating film 76 such as a SiO ₂ film is formed on the gate electrode 75 to fill the height slightly lower than the height of the upper end portion of the needle-like semiconductor crystal 73.

Next, as illustrated in FIG. 13D, an ohmic electrode material is formed on the insulating film 76 to form a drain electrode 77 that is in ohmic contact with the upper end of the needle-like semiconductor crystal 73. On the other hand, an ohmic electrode material is formed on the back surface of the n-type GaAs substrate 71 to form the source electrode 78.
Thus, a Schottky gate FET is formed.
According to the eighth embodiment, except for the step of forming the cone 72, the integrated FET in which the extremely small Schottky gate FET using the needle-like semiconductor crystal 73 is arranged in a two-dimensional array is obtained. It can be easily manufactured without using a lithography technique.

Next explained is a method for manufacturing a semiconductor device according to the ninth embodiment of the invention.
In the ninth embodiment, as shown in FIG. 14, the gate electrode 75 and the drain electrode 77 are patterned for each FET. The gate electrodes 75 are connected to each other by a predetermined wiring (not shown), and the drain electrodes 77 are also connected to each other by a predetermined wiring (not shown). In this case, each FET can be driven independently.

Next explained is a quantum dot array production method according to the tenth embodiment of the invention.
In the tenth embodiment, first, as shown in FIG. 15A, a large number of cones 82 are formed in a two-dimensional array on a GaAs substrate 81, for example.
Next, as shown in FIG. 15B, a needle-like semiconductor crystal 84 composed of an AlGaAs layer 83a, a GaAs layer 83b, and an AlGaAs layer 83c is formed at the tip of each cone 82 by the same method as in the first embodiment.

Next, as shown in FIG. 15C, an AlGaAs layer 85 is epitaxially grown on the entire surface to fill the portion between the needle-like semiconductor crystals 84. Thus, a structure in which the GaAs layer 83b serving as the well layer is surrounded by the AlGaAs layer 83a, AlGaAs layer 83c, and AlGaAs layer 85 serving as the barrier layer, that is, an AlGaAs / GaAs quantum dot is formed.
According to the tenth embodiment, a two-dimensional quantum dot array can be easily manufactured.

Next, an eleventh embodiment of the present invention will be described. In the eleventh embodiment, a method different from the first embodiment will be described as a method for producing the probe 12 made of CDW needle crystals.
That is, in the eleventh embodiment, as shown in FIG. 16A, first, a CDW crystal substrate 91 is prepared, and a predetermined portion of the surface is irradiated with an electron beam 23 at room temperature. The spot size of the electron beam 23 is, for example, about 50 nm to 1 μm. At this time, the CDW crystal substrate 91 is heated to a temperature substantially equal to its melting point at the irradiated portion of the electron beam 23. As a result of the recrystallization of the melted CDW crystal substrate 91, the CDW needle crystal 24 grows as shown in FIG. 16B. The CDW needle crystal 24 has a thickness (diameter) of, for example, about 5 nm to 1 μm, a length of, for example, 10 nm to 2 μm, or 10 to 500 nm, and an aspect ratio (length / thickness) of generally 100 or less. It is.

A predetermined portion of the surface of the CDW crystal substrate 91 made of TaSe ₂ crystal was irradiated with the electron beam 23. The CDW crystal substrate 91 is a square having a side length of about 40 μm. The spot size of the electron beam 23 was 1 μm, the acceleration voltage was 25 kV, the irradiation current amount was 8 × 10 ⁻⁸ A, and the irradiation time was 30 minutes. The irradiation with the electron beam 23 was performed in a vacuum of 3 to 4 × 10 ⁻⁶ Torr. As a result, in the form of CDW needle-like crystals 24 made of single crystal of TaSe ₂ acicular crystals having a diameter of about 50nm on the CDW crystal substrate 91 made of TaSe ₂ crystals (nanofibers) is crystalline and CDW crystal substrate 91 is continuously It grew to a length of about 150 nm.
According to the eleventh embodiment, a CDW needle crystal 24 suitable for use in a CDW quantum phase microscope can be obtained.

Although the embodiments and examples of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments and examples, and various modifications based on the technical idea of the present invention are possible. It is.
For example, the numerical values, configurations, materials, raw materials, processes, and the like given in the above-described embodiments and examples are merely examples, and different numerical values, configurations, materials, raw materials, processes, and the like may be used as necessary. Good.

It is a basic diagram which shows the CDW quantum phase microscope by 1st Embodiment of this invention. It is a basic diagram which shows the probe used in the CDW quantum phase microscope by 1st Embodiment of this invention. It is a basic diagram for demonstrating the measurement principle by the CDW quantum phase microscope by 1st Embodiment of this invention. It is a basic diagram for demonstrating the manufacturing method of the probe used in the CDW quantum phase microscope by 1st Embodiment of this invention. It is a drawing substitute photograph which shows the probe produced by the production method of the probe used in the CDW quantum phase microscope by a 1st embodiment of this invention. It is a drawing-substituting photograph showing an atomic image obtained by the CDW quantum phase microscope according to the first embodiment of the present invention. 3 is a drawing-substituting photograph showing a CDW image obtained by the CDW quantum phase microscope according to the first embodiment of the present invention. It is a basic diagram which shows the CDW quantum phase microscope by the 2nd Embodiment of this invention. It is a basic diagram which shows the CDW quantum interferometer by 3rd Embodiment of this invention. It is a basic diagram which shows the multiprobe CDW quantum phase microscope by 4th Embodiment of this invention. It is a basic diagram which shows the multiprobe CDW quantum phase microscope by the 5th Embodiment of this invention. It is a perspective view which shows the manufacturing method of the semiconductor element by 8th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the semiconductor element by 8th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the semiconductor element by 9th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the quantum dot array by 10th Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the probe by 11th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Piezoelectric controller, 12 ... Probe, 16, 37, 45 ... Frequency meter, 17 ... Sample, 21 ... Cone, 22 ... Raw material film, 23 ... Electron beam, 24, 31, 41 ... CDW needle crystal, 73 ... acicular semiconductor crystal

Claims (31)

  The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. A probe microscope probe manufactured by growing a needle crystal using a raw material.   The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. A method for producing a probe microscope probe, characterized in that needle crystals are grown using raw materials.   The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position that is a predetermined distance away from the tip of the substrate along a side surface thereof under a condition that the substrate does not melt. A probe microscope comprising a probe manufactured by growing a needle crystal using a raw material.   By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate and irradiating an energy beam on a condition where the substrate does not melt at a predetermined distance along the side surface from the tip of the substrate, A probe microscope probe manufactured by growing a needle crystal using a growth material.   By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, A method for manufacturing a probe microscope probe, characterized in that needle crystals are grown using a growth raw material.   By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, A probe microscope having a probe manufactured by growing a needle crystal using a growth material.   The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A probe microscope probe manufactured by growing an acicular crystal using the first growth raw material and the second growth raw material by irradiating an energy beam under conditions.   The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A method for producing a probe microscope probe, characterized in that an acicular crystal is grown using the first growth material and the second growth material by irradiating an energy beam under conditions.   The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A probe microscope comprising a probe manufactured by growing an acicular crystal using the first growth material and the second growth material by irradiating an energy beam under conditions. The acicular crystal is MX _p (where M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te, 1.8 ≦ p ≦ 2.2), MX _q (where M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te; 7 ≦ q ≦ 3.3) or MX _r (wherein M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te, The probe microscope probe according to claim 1, 4 or 7, characterized in that 3.6≤r≤4.4). The acicular crystal is MX _p (where M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te, 1.8 ≦ p ≦ 2.2), MX _q (where M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te; 7 ≦ q ≦ 3.3) or MX _r (wherein M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te, The method of manufacturing a probe microscope probe according to claim 2, 5 or 8, wherein 3.6 ≦ r ≦ 4.4). The acicular crystal is MX _p (where M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te, 1.8 ≦ p ≦ 2.2), MX _q (where M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te; 7 ≦ q ≦ 3.3) or MX _r (wherein M is at least one element selected from the group consisting of Ta and Nb, X is at least one element selected from the group consisting of S, Se and Te, The probe microscope according to claim 3, 6 or 9, wherein 3.6≤r≤4.4). 11. The probe for a probe microscope according to claim 10, wherein the acicular crystal comprising MX _p , MX _q or MX _r is a charge density wave crystal. 12. The method of manufacturing a probe microscope probe according to claim 11, wherein the acicular crystal comprising MX _p , MX _q or MX _r is a charge density wave crystal. The probe microscope according to claim 12, wherein the needle-like crystal made of MX _p , MX _q or MX _r is a charge density wave crystal.   9. The probe microscope probe manufacturing method according to claim 2, wherein the energy beam is an electron beam, an ion beam, or a laser beam.   6. A temperature gradient of 10 ° C./μm or more and 100 ° C./μm or less exists between the irradiation portion of the energy beam of the substrate and the tip portion with the tip portion being a low temperature side. Or the manufacturing method of the probe for probe microscopes of 8.   8. The probe microscope probe according to claim 1, wherein the thickness of the needle crystal is 5 nm or more and 1 μm or less.   9. The method of manufacturing a probe microscope probe according to claim 2, wherein the needle crystal is grown in a vacuum or in a hydrogen gas atmosphere.   9. The method of manufacturing a probe microscope probe according to claim 2, wherein the substrate is made of a substance having a melting point of 800 ° C. or higher.   The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position away from the tip of the substrate along a side surface by a predetermined distance under a condition that the substrate does not melt. A method for producing a needle-like body, wherein a needle-like crystal is grown using a raw material.   By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, A method for producing a needle-like body, wherein a needle-like crystal is grown using a growth raw material.   The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A method for producing a needle-like body, wherein an acicular crystal is grown using the first growth raw material and the second growth raw material by irradiating an energy beam under conditions.   The growth material is deposited on the surface of a cone-shaped or blade-shaped substrate, and the growth is performed by irradiating an energy beam at a position that is a predetermined distance away from the tip of the substrate along a side surface thereof under a condition that the substrate does not melt. A method for manufacturing an electronic device, characterized in that needle crystals are grown using a raw material.   By supplying a growth raw material to the surface of the cone-shaped or blade-shaped substrate, and irradiating an energy beam on a condition where the substrate is not melted at a predetermined distance along the side surface from the tip of the substrate, A method for manufacturing an electronic device, characterized in that needle crystals are grown using a growth material.   The first growth material is deposited on the surface of the cone-shaped or blade-shaped substrate, and the second growth material is supplied, and the substrate does not melt at a position that is a predetermined distance along the side surface from the tip of the substrate. A method of manufacturing an electronic device, wherein an acicular crystal is grown using the first growth material and the second growth material by irradiating an energy beam under conditions.   A probe microscope probe manufactured by irradiating a predetermined site on the surface of a substrate with an energy beam and growing needle crystals by recrystallization.   A method of manufacturing a probe microscope probe, characterized in that an energy beam is irradiated to a predetermined portion of the surface of a substrate and a needle crystal is grown by recrystallization.   A probe microscope comprising a probe manufactured by irradiating a predetermined portion of a surface of a substrate with an energy beam and growing a needle crystal by recrystallization.   A method for producing a needle-like body, wherein an energy beam is irradiated to a predetermined portion of the surface of a substrate to grow a needle-like crystal by recrystallization. A method of manufacturing an electronic device, characterized in that an energy beam is irradiated to a predetermined portion of the surface of a substrate and a needle crystal is grown by recrystallization.

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