JP2005292503A - Organic el display - Google Patents

Organic el display Download PDF

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JP2005292503A
JP2005292503A JP2004108129A JP2004108129A JP2005292503A JP 2005292503 A JP2005292503 A JP 2005292503A JP 2004108129 A JP2004108129 A JP 2004108129A JP 2004108129 A JP2004108129 A JP 2004108129A JP 2005292503 A JP2005292503 A JP 2005292503A
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light emitting
image signal
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Reiji Hatsutori
励治 服部
Hisao Tanabe
尚雄 田辺
Naoki Kobayashi
小林  直樹
Yasushi Sato
廉志 佐藤
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Dai Nippon Printing Co Ltd
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Priority to US11/092,606 priority patent/US7403196B2/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0439Pixel structures
    • G09G2300/0465Improved aperture ratio, e.g. by size reduction of the pixel circuit, e.g. for improving the pixel density or the maximum displayable luminance or brightness
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0819Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0833Several active elements per pixel in active matrix panels forming a linear amplifier or follower
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0842Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2360/00Aspects of the architecture of display systems
    • G09G2360/14Detecting light within display terminals, e.g. using a single or a plurality of photosensors
    • G09G2360/145Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
    • G09G2360/147Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen the originated light output being determined for each pixel
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275Details of drivers for data electrodes
    • G09G3/3291Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL display which uses self-emitting organic EL elements arranged in a matrix to display, and can reduce uneven luminance between the pixels in a simple configuration with less sacrificing the aperture ratio. <P>SOLUTION: The display has a light emitting part; a current control part to control the current to the light emitters; a photoelectric converter part to detect the light from the light emittiers ant generate current; a 1st switching part to switch transmitting/non-transmitting of the generated current; an amplifier part to convert the current from the 1st switch to a voltage and amplify; a comparator amplifier part to compare and amplify the voltage from the amplifier and the voltage matching the image sign; a 2nd switching part to switch transmitting/non-transmitting of the voltage obtained by comparing and amplifying; and an image signal storage capacitor to store the image signals charged or discharged by the voltage from the 2nd switch. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、自己発光する有機EL(エレクトロルミネッセンス)素子を画素に用いてこれをマトリクス状に配置して表示を行う有機EL表示装置に係り、特に、画素ごとの輝度ばらつきの低減化に好適な有機EL表示装置に関する。   The present invention relates to an organic EL display device that performs display by using self-emitting organic EL (electroluminescence) elements in pixels and arranging them in a matrix, and is particularly suitable for reducing luminance variation for each pixel. The present invention relates to an organic EL display device.

有機EL素子を利用した表示装置は、有機EL素子が自己発光素子であることからバックライトが不要であり低消費電力化に向く点でLCD(液晶表示装置)にない特徴がある。また、高速応答、広視野角の特性を有し、さらに素子自体が固体であるためフレキシブルな用途への応用が可能などの利点もある。   A display device using an organic EL element has a feature that an LCD (Liquid Crystal Display) does not have a backlight because the organic EL element is a self-light-emitting element and does not require a backlight. In addition, since it has characteristics of a high-speed response and a wide viewing angle, and since the element itself is solid, it has any advantages that can be applied to flexible applications.

有機EL表示装置の駆動方式としては、LCDと同様にPM(パッシブマトリクス)駆動とAM(アクティブマトリクス)駆動とが可能であるが、画素ごとに薄膜トランジスタ(TFT)を設けて画素を個々に制御するAM方式が主流になっている。これにより、高精細化、長寿命化、さらなる低消費電力化も考慮されている。   As a driving method of the organic EL display device, PM (passive matrix) driving and AM (active matrix) driving can be performed in the same manner as the LCD. However, a thin film transistor (TFT) is provided for each pixel to control the pixel individually. The AM method has become mainstream. As a result, higher definition, longer life, and further lower power consumption are considered.

ところで有機EL表示装置の画素ごとの発光をばらつきなく制御するためには、ある画像信号に対する、その画素ごとの電流値をそろえる必要がある。特に、画像信号がアナログ信号で与えられそのアナログ値に従って画素に中間的な発光をさせる方式の場合にはこの点は重要である。輝度むらを低減することを目的とした表示装置の例には例えば下記特許文献1、2のものがある。   By the way, in order to control the light emission of each pixel of the organic EL display device without variation, it is necessary to align the current values of each pixel with respect to a certain image signal. In particular, this is important in the case of a method in which an image signal is given as an analog signal and the pixel emits light in accordance with the analog value. Examples of display devices aimed at reducing luminance unevenness include those disclosed in Patent Documents 1 and 2 below.

特許文献1に開示の有機EL表示装置では、画像信号に画素電流が一致するように負帰還する構成が用いられている。これにより、電流制御回路の入力電圧対出力電流の特性にばらつきがあってもこれが吸収されて、一定の画像信号に対して画素同士でそろった電流値が得られるものである。特許文献2の表示装置には、発光部の発光する光を光ダイオードで検知し画像信号にフィードバックする構成が開示されている。これによってもほぼ同様の効果が得られると考えられる。
特開2002−91377号公報 特開2003−271098号公報
The organic EL display device disclosed in Patent Document 1 uses a configuration in which negative feedback is performed so that a pixel current matches an image signal. As a result, even if there is a variation in the characteristics of the input voltage versus the output current of the current control circuit, this is absorbed and a current value that is uniform between pixels for a certain image signal is obtained. The display device of Patent Document 2 discloses a configuration in which light emitted from a light emitting unit is detected by a photodiode and fed back to an image signal. It is considered that almost the same effect can be obtained by this.
JP 2002-91377 A JP 2003-271098 A

しかしながら、特許文献1に開示の構成では、必然的、負帰還に必要な誤差増幅回路を各画素ごとに作り込む必要があるため表示の開口率(表示面積に対する正味の発光部面積の割合)の点では不利さがあると考えられる。また、特許文献2に開示の構成は、上記のフィードバック信号を得るのにリセット回路およびリセット信号路を要し構成上の複雑性が回避できないものと考えられる。   However, the configuration disclosed in Patent Document 1 inevitably requires an error amplifying circuit necessary for negative feedback to be formed for each pixel, so that the display aperture ratio (the ratio of the net light emitting area to the display area) is increased. This is considered disadvantageous. The configuration disclosed in Patent Document 2 is considered to require a reset circuit and a reset signal path in order to obtain the feedback signal, and the configuration complexity cannot be avoided.

本発明は、上記の事情を考慮してなされたもので、自己発光する有機EL素子を画素に用いてこれをマトリクス状に配置して表示を行う有機EL表示装置において、簡易な構成で画素ごとの輝度ばらつきの低減化しかつ開口率の点でもその犠牲の小さい有機EL表示装置を提供することを目的とする。   The present invention has been made in consideration of the above circumstances, and in an organic EL display device that performs display by using organic EL elements that self-emit light in pixels and arranging them in a matrix, each pixel has a simple configuration. An object of the present invention is to provide an organic EL display device which can reduce the variation in luminance and reduce the sacrifice of the aperture ratio.

上記の課題を解決するため、本発明に係る有機EL表示装置は、複数の画素がマトリックス状に配置され、前記複数の画素の中から画素選択信号に従って画素が選択され、前記選択された画素が画像信号に従って発光させられる有機EL表示装置であって、発光部と、前記発光部に流す電流を制御する電流制御部と、前記発光部が発光する光を検知して電流を発生する光電変換部と、前記画素選択信号に従って、前記発生された電流の伝送/非伝送の切り替えを行う第1のスイッチング部と、前記第1のスイッチング部より伝送された前記電流を電流電圧変換して増幅する増幅部と、前記増幅により得られた電圧値と前記画像信号に相当する電圧値とを比較増幅する比較増幅部と、前記画素選択信号に従って、前記比較増幅された結果である電圧値の伝送/非伝送の切り替えを行う第2のスイッチング部と、前記第2のスイッチング部より伝送された前記電圧値により充放電がされる画像信号保持用コンデンサとを具備し、前記電流制御部が、前記画像信号保持用コンデンサの充電電圧により前記発光部に流す前記電流を制御することを特徴とする。   In order to solve the above problems, in the organic EL display device according to the present invention, a plurality of pixels are arranged in a matrix, a pixel is selected from the plurality of pixels according to a pixel selection signal, and the selected pixel is An organic EL display device that emits light according to an image signal, a light-emitting unit, a current control unit that controls a current that flows through the light-emitting unit, and a photoelectric conversion unit that detects a light emitted from the light-emitting unit and generates a current A first switching unit that switches between transmission / non-transmission of the generated current according to the pixel selection signal, and amplification that amplifies the current transmitted from the first switching unit by current-voltage conversion And a comparison amplification unit that compares and amplifies a voltage value obtained by the amplification and a voltage value corresponding to the image signal, and the comparison amplification result according to the pixel selection signal. A second switching unit that switches between transmission and non-transmission of a pressure value, and an image signal holding capacitor that is charged and discharged by the voltage value transmitted from the second switching unit, and the current control The unit controls the current that flows through the light emitting unit according to a charging voltage of the image signal holding capacitor.

この構成では、画像信号が比較増幅部の一方に入力されるが、もう一方の入力には、第1のスイッチング部を介して、光電変換部が発生する電流を電流電圧変換増幅して得られた電圧が与えられる。また、比較増幅部の出力は第2のスイッチング部を介して画像信号保持用コンデンサおよび電流制御部に供給される。このような構成では、各画素の第1のスイッチング部をマルチプレクサに用い、かつ各画素の第2のスイッチング部をデマルチプレクサに用いることが容易に達成される。すなわち、複数の画素に対して比較増幅部がひとつあれば足りることになるので、比較増幅部を各画素ごとに設けるに及ばない。よって、開口率を低下させる要因を排除できる。また、発光部から光電変換部、増幅部を介して比較増幅部による負帰還がされるので、もとより電流制御部の入力電圧対出力電流の特性にばらつきがあってもこれが吸収されて、一定の画像信号に対して画素同士でそろった電流値が得られる。   In this configuration, the image signal is input to one of the comparison amplification units, and the other input is obtained by current-voltage conversion amplification of the current generated by the photoelectric conversion unit via the first switching unit. Voltage is given. The output of the comparison amplification unit is supplied to the image signal holding capacitor and the current control unit via the second switching unit. In such a configuration, it is easily achieved that the first switching unit of each pixel is used for the multiplexer and the second switching unit of each pixel is used for the demultiplexer. That is, since only one comparison amplification unit is required for a plurality of pixels, it is not necessary to provide a comparison amplification unit for each pixel. Therefore, a factor that decreases the aperture ratio can be eliminated. Moreover, since negative feedback is performed by the comparison amplification unit from the light emitting unit through the photoelectric conversion unit and the amplification unit, even if there is a variation in the characteristics of the input voltage versus the output current of the current control unit, this is absorbed and fixed. A current value that is aligned between pixels with respect to the image signal is obtained.

本発明に係る有機EL表示装置によれば、負帰還のため比較増幅部を有するがこの比較増幅部を各画素ごとに設けるには及ばないので、またリセット回路が不要であり、簡易な構成で画素ごとの輝度ばらつきを低減化しかつ開口率の点でもその犠牲をごく小さくできる。   The organic EL display device according to the present invention has a comparison amplification unit for negative feedback, but this comparison amplification unit is not provided for each pixel, and a reset circuit is not required, and the configuration is simple. It is possible to reduce luminance variation for each pixel and reduce the sacrifice in terms of aperture ratio.

本発明の実施態様として、前記発光部と前記光電変換部とが、発光および光電変換を行う共通の層と、前記共通の層の一方の側に積層形成された共通のカソード電極とを有し、前記発光部が、前記共通の層の前記一方の側とは異なる側に積層形成された発光部アノード電極をさらに有し、前記光電変換部が、前記共通の層の前記一方の側とは異なる側であって前記発光部アノード電極に隣接する位置に積層形成された光電変換部アノード電極をさらに有する、とすることができる。発光部をグラウンド基準で形成した場合の、光電変換部の形成との構成上の整合性をとるひとつの例である。これによれば、発光部と光電変換部との光結合を画素ごとに実現する構成が容易に得られる。   As an embodiment of the present invention, the light emitting unit and the photoelectric conversion unit include a common layer that performs light emission and photoelectric conversion, and a common cathode electrode that is stacked on one side of the common layer. The light emitting unit further includes a light emitting unit anode electrode formed on a side different from the one side of the common layer, and the photoelectric conversion unit is defined as the one side of the common layer. The photoelectric conversion unit anode electrode may further include a photoelectric conversion unit anode electrode formed on a different side and adjacent to the light emitting unit anode electrode. It is an example which takes the structural consistency with formation of a photoelectric conversion part when a light emission part is formed on the ground reference. According to this, the structure which implement | achieves the optical coupling of a light emission part and a photoelectric conversion part for every pixel is obtained easily.

また、実施態様として、前記発光部、前記電流制御部、前記光電変換部、前記第1のスイッチング部、前記第2のスイッチング部、および前記画像信号保持用コンデンサが、前記複数の画素それぞれにおのおのあり、前記増幅部および比較増幅部が、前記マトリックス状の画素の列ごとにひとつずつあり、前記増幅部への前記第1のスイッチング部からの接続が、該比較増幅部が属する画素の列に含まれる画素すべてからなされ、前記比較増幅部からの前記第2のスイッチング部への接続が、該比較増幅部が属する画素の列の含まれる画素すべてに対してなされている、とすることができる。   Further, as an embodiment, the light emitting unit, the current control unit, the photoelectric conversion unit, the first switching unit, the second switching unit, and the image signal holding capacitor are provided for each of the plurality of pixels. And there is one amplification unit and one comparison amplification unit for each column of pixels in the matrix, and the connection from the first switching unit to the amplification unit is connected to the column of pixels to which the comparison amplification unit belongs. It can be said that all the pixels included are connected, and the connection from the comparison amplification unit to the second switching unit is made for all the pixels included in the column of pixels to which the comparison amplification unit belongs. .

上記で述べた第1および第2のスイッチング部のマルチプレクサまたはデマルチプレクサとしての使用をマトリックス状の画素の各列ごとにまとめた構成である。これによれば、各列ごとに増幅部および比較増幅部がひとつあれば足り、作り込む増幅部および比較増幅器の数をもっとも少なくすることができる。   This is a configuration in which the use of the first and second switching units described above as multiplexers or demultiplexers is summarized for each column of matrix pixels. According to this, only one amplifying unit and comparative amplifying unit are required for each column, and the number of amplifying units and comparative amplifiers to be built can be minimized.

また、実施態様として、前記電流制御部は、nチャネル薄膜トランジスタであり、前記発光部に流す前記電流をドレイン・ソース電流として出力し、該電流の制御がゲートに供給された前記画像信号保持用コンデンサの充電電圧によりなされるという構成とすることができる。電流制御部にnチャネル薄膜トランジスタを用いる場合の構成である。   Further, as an embodiment, the current control unit is an n-channel thin film transistor, outputs the current flowing through the light emitting unit as a drain-source current, and the image signal holding capacitor supplied with the control of the current to the gate It can be set as the structure made by the charging voltage of. In this configuration, an n-channel thin film transistor is used for the current control unit.

また、実施態様として、前記電流制御部は、pチャネル薄膜トランジスタであり、前記発光部に流す前記電流をソース・ドレイン電流として出力し、該電流の制御がゲートに供給された前記画像信号保持用コンデンサの充電電圧によりなされるという構成とすることもできる。電流制御部にpチャネル薄膜トランジスタを用いる場合の構成である。   As an embodiment, the current control unit is a p-channel thin film transistor, outputs the current flowing through the light emitting unit as a source / drain current, and the image signal holding capacitor supplied with the control of the current to the gate It is also possible to adopt a configuration in which the charging voltage is made by the following charging voltage. In this configuration, a p-channel thin film transistor is used for the current control unit.

以上を踏まえ、以下では本発明の実施形態を図面を参照しながら説明する。まず、実施形態の説明に先だって、有機EL表示装置における各画素での輝度むらの発生要因を図7を参照して説明する。図7は、比較例としての有機EL表示装置の画素ごとの構成を示す等価回路図である。図7(a)は薄膜トランジスタ(TFT)としてpチャネルトランジスタ56、58を用いた構成を、図7(b)は薄膜トランジスタとしてnチャネルトランジスタ56a、58aを用いた構成をそれぞれ示す。   Based on the above, embodiments of the present invention will be described below with reference to the drawings. First, prior to the description of the embodiment, the cause of luminance unevenness in each pixel in the organic EL display device will be described with reference to FIG. FIG. 7 is an equivalent circuit diagram illustrating a configuration of each pixel of an organic EL display device as a comparative example. FIG. 7A shows a configuration using p-channel transistors 56 and 58 as thin film transistors (TFT), and FIG. 7B shows a configuration using n-channel transistors 56a and 58a as thin film transistors.

図7(a)に示す場合は、発光部である有機EL素子54がグラウンド基準で形成され、図7(b)に示す場合は、有機EL素子54aが電源基準で形成されている。符号57、57aは画像信号保持用コンデンサ、符号51は電源線、符号52は画像信号線、符号53は走査線である。図示していないが、画像信号線52は縦(列)方向の他の画素に共通に接続され、走査線53は横(行)方向の他の画素に共通に接続される。   In the case shown in FIG. 7A, the organic EL element 54 that is a light emitting portion is formed with reference to the ground, and in the case shown in FIG. 7B, the organic EL element 54a is formed with reference to the power source. Reference numerals 57 and 57a denote image signal holding capacitors, reference numeral 51 denotes a power supply line, reference numeral 52 denotes an image signal line, and reference numeral 53 denotes a scanning line. Although not shown, the image signal line 52 is commonly connected to other pixels in the vertical (column) direction, and the scanning line 53 is commonly connected to other pixels in the horizontal (row) direction.

画像信号線52にはアナログ値(電圧)で画像信号が供給され、これに同期して走査線53には画素選択信号が供給される。画素選択信号が走査線53に供給された場合にはトランジスタ58(58a)が導通状態となって画像信号保持用コンデンサ57(57a)を画像信号線52上の画像信号の電圧に従い充放電する。コンデンサ57(57a)は次にトランジスタ58(58a)が導通状態になるまでその電圧を保持する。コンデンサ57(57a)に保持された電圧によりトランジスタ56(56a)はそのドレイン電流を制御する。   An image signal is supplied to the image signal line 52 with an analog value (voltage), and a pixel selection signal is supplied to the scanning line 53 in synchronization therewith. When the pixel selection signal is supplied to the scanning line 53, the transistor 58 (58a) is turned on to charge and discharge the image signal holding capacitor 57 (57a) according to the voltage of the image signal on the image signal line 52. Capacitor 57 (57a) then holds that voltage until transistor 58 (58a) becomes conductive. The transistor 56 (56a) controls its drain current by the voltage held in the capacitor 57 (57a).

ここで、トランジスタ56(56a)の入力電圧(ゲートソース間電圧Vgs)対出力電流(ドレイン電流Ids、特にpチャネルトランジスタ56の場合は電流の向きを考えてソース・ドレイン電流、nチャネルトランジスタ56aの場合は同様にドレイン・ソース電流ともいう。)の特性は、次式で記述される。すなわち、Ids=(1/2)・μ・Cox・(W/L)・(Vgs−Vth)である。ここで、μはキャリア移動度、Coxは単位面積あたりのゲート容量、Wはチャネル幅、Lはチャネル長、Vthはしきい電圧である。この式からわかるようにしきい電圧Vthが画素ごとにばらつくと同一の入力電圧(ゲートソース間電圧Vgs)に対して出力電流(ドレイン電流Ids)が自乗特性で(すなわち非常に感度高く)ばらつくことがわかる。ドレイン電流Idsは有機EL素子54(54a)にそのまま流す電流であり、電流のばらつきすなわち輝度のばらつきとなる。 Here, the input voltage (gate-source voltage Vgs) of the transistor 56 (56a) versus the output current (drain current Ids, particularly in the case of the p-channel transistor 56, the source / drain current, the n-channel transistor 56a The case is also referred to as a drain-source current). That is, Ids = (1/2) · μ · Cox · (W / L) · (Vgs−Vth) 2 . Here, μ is the carrier mobility, Cox is the gate capacity per unit area, W is the channel width, L is the channel length, and Vth is the threshold voltage. As can be seen from this equation, when the threshold voltage Vth varies from pixel to pixel, the output current (drain current Ids) varies in a square characteristic (that is, very sensitive) with respect to the same input voltage (gate-source voltage Vgs). Understand. The drain current Ids is a current that flows through the organic EL element 54 (54a) as it is, resulting in a current variation, that is, a luminance variation.

トランジスタ56(56a)としてのTFTには電流駆動能力に優れた多結晶シリコンがそのチャネル材料に用いられることが多いが、素子としての特性でしきい電圧Vthは実際上例えば数十mV程度はばらつく。したがって、これらの比較例の構成では表示装置としての画素ごとの輝度ばらつきが避けられない。また、ドレイン電流Idsのばらつきを小さくするためにVthの中心値を小さくする設計を採用すると、ドレイン電流Idsが大きくなり有機EL表示装置として低消費電力化できず好ましくない。   For the TFT as the transistor 56 (56a), polycrystalline silicon having an excellent current driving capability is often used as the channel material. However, the threshold voltage Vth varies depending on the characteristics of the device, for example, about several tens of mV. . Therefore, in the configurations of these comparative examples, luminance variations for each pixel as a display device cannot be avoided. In addition, it is not preferable to employ a design in which the center value of Vth is reduced in order to reduce the variation in the drain current Ids, because the drain current Ids increases and the power consumption cannot be reduced as an organic EL display device.

これに対して図1は、本発明の一実施形態に係る有機EL表示装置における特定の画素の構成を示すブロック図である。図1に示すようにこの画素には、電源線1、画像信号線2、走査線3がそれぞれ接続され、また、発光部4、光電変換部5、電流制御部6、画像信号保持用コンデンサ7、第1スイッチング部8、第2スイッチング部9、比較増幅部10、演算増幅回路15、抵抗16を有する。発光部4と光電変換部5は、光結合しており光結合部40として機能する。演算増幅回路15と抵抗16は、電流入力型の増幅回路(増幅部)として機能する。なお、図示していないが、走査線3は横(行)方向の他の画素に共通に接続される。   On the other hand, FIG. 1 is a block diagram showing a configuration of a specific pixel in the organic EL display device according to the embodiment of the present invention. As shown in FIG. 1, a power line 1, an image signal line 2, and a scanning line 3 are connected to this pixel, and a light emitting unit 4, a photoelectric conversion unit 5, a current control unit 6, and an image signal holding capacitor 7. , First switching unit 8, second switching unit 9, comparison amplification unit 10, operational amplification circuit 15, and resistor 16. The light emitting unit 4 and the photoelectric conversion unit 5 are optically coupled and function as the optical coupling unit 40. The operational amplifier circuit 15 and the resistor 16 function as a current input type amplifier circuit (amplifier). Although not shown, the scanning line 3 is commonly connected to other pixels in the horizontal (row) direction.

発光部4は、グラウンド基準で形成された有機EL素子であり、そのアノード側が電流制御部6の電流出力端子に接続される。電流制御部6は、発光部4に流れる電流を制御するものであり、その制御が電圧保持用コンデンサ7が保持する電圧に従うように制御入力端子がコンデンサ7の一端に接続される。光電変換部5は、グラウンドと第1スイッチング部8の一端との間に接続され、電流制御部6が制御した結果としての電流により発光する発光部4の光を検出し、光量に応じて光電変換して電流を発生するものである。発生された電流は、第1スイッチング部8を介して電流入力型の増幅回路(演算増幅回路16と抵抗16とで構成)に導かれる。   The light emitting unit 4 is an organic EL element formed on the basis of the ground, and its anode side is connected to the current output terminal of the current control unit 6. The current control unit 6 controls the current flowing through the light emitting unit 4, and the control input terminal is connected to one end of the capacitor 7 so that the control follows the voltage held by the voltage holding capacitor 7. The photoelectric conversion unit 5 is connected between the ground and one end of the first switching unit 8, detects the light of the light emitting unit 4 that emits light by the current as a result of being controlled by the current control unit 6, and detects the photoelectric according to the light amount. A current is generated by conversion. The generated current is guided to a current input type amplifier circuit (comprising an operational amplifier circuit 16 and a resistor 16) through the first switching unit 8.

第1スイッチング部8は、光電変換部5と演算増幅回路15の反転入力端子との間に設けられ、走査線3からの画素選択信号に基づき伝送/非伝送を切り替え、伝送のときに光電変換部5で発生された電流を演算増幅回路15の反転入力端子に導くものである。第2スイッチング部9は、比較増幅部10の出力と画像信号保持用コンデンサ7の一端および電流制御部6の制御入力端子との間に設けられ、走査線3からの画素選択信号に基づき伝送/非伝送を切り替え、伝送のときに比較増幅部10の出力電圧を画像信号保持用コンデンサ7の一端および電流制御部6の制御入力端子に導くものである。   The first switching unit 8 is provided between the photoelectric conversion unit 5 and the inverting input terminal of the operational amplifier circuit 15, and switches between transmission and non-transmission based on a pixel selection signal from the scanning line 3, and photoelectric conversion is performed during transmission. The current generated in the unit 5 is guided to the inverting input terminal of the operational amplifier circuit 15. The second switching unit 9 is provided between the output of the comparison amplification unit 10 and one end of the image signal holding capacitor 7 and the control input terminal of the current control unit 6, and transmits / receives based on the pixel selection signal from the scanning line 3. The non-transmission is switched, and the output voltage of the comparison amplification unit 10 is guided to one end of the image signal holding capacitor 7 and the control input terminal of the current control unit 6 during transmission.

演算増幅回路15は、抵抗16とともに増幅部を構成するものであり、その非反転入力端子には定電圧(例えば−5V)が与えられ、反転入力端子には第1スイッチング部8を介して光電変換部5の発生電流が入力電流として導かれる。演算増幅回路15の出力端子と反転入力端子との間には抵抗16が接続され、これにより演算増幅回路15の出力端子に所定の電流電圧増幅後の電圧を発生させる。発生された出力電圧は比較増幅部10の非反転入力端子に導かれる。   The operational amplifier circuit 15 constitutes an amplifying unit together with the resistor 16, and a constant voltage (for example, −5 V) is applied to the non-inverting input terminal, and the inverting input terminal is connected to the photoelectric converter via the first switching unit 8. The current generated by the converter 5 is guided as an input current. A resistor 16 is connected between the output terminal and the inverting input terminal of the operational amplifier circuit 15, thereby generating a voltage after a predetermined current voltage amplification at the output terminal of the operational amplifier circuit 15. The generated output voltage is guided to the non-inverting input terminal of the comparison amplification unit 10.

比較増幅部10は、非反転入力端子の電圧から反転入力端子の電圧を減算しその結果を大きな利得で増幅して出力する機能を有するもので、反転入力端子が上記のように演算増幅回路15の出力端子に接続され、出力端子が上記のように第2のスイッチング部9に接続され、またその非反転入力端子には画像信号線2からの画像信号が供給される。なお、演算増幅回路15の反転入力端子に合流するように描かれる破線2B、比較増幅器10の出力から延長して描かれる破線2A、および画像信号線2に延長して描かれる長破線20については後述する。   The comparison amplification unit 10 has a function of subtracting the voltage of the inverting input terminal from the voltage of the non-inverting input terminal, amplifying the result with a large gain, and outputting the result, and the inverting input terminal has the operational amplifier circuit 15 as described above. The output terminal is connected to the second switching unit 9 as described above, and the image signal from the image signal line 2 is supplied to the non-inverting input terminal. Note that a broken line 2B drawn so as to join the inverting input terminal of the operational amplifier circuit 15, a broken line 2A drawn extending from the output of the comparison amplifier 10, and a long broken line 20 drawn extended to the image signal line 2 It will be described later.

図1に示す構成の有機EL表示装置の画素によれば、画像信号線2に画像信号が与えられ、走査線3に画素選択信号が与えられて第1および第2のスイッチング部8、9が閉じた状態のときに、その画像信号にほぼ等しい電圧が演算増幅回路15の出力電圧になる。これは、光電変換部5、第1スイッチング部8、増幅部(演算増幅回路15と抵抗16)、比較増幅部10、第2スイッチング部9、電流制御部6、光電変換部5のループで負帰還路が形成され、比較増幅部10の非反転入力と反転入力の関係がいわゆるイマジナリショートの状態となるからである。   According to the pixel of the organic EL display device having the configuration shown in FIG. 1, an image signal is given to the image signal line 2, and a pixel selection signal is given to the scanning line 3, so that the first and second switching units 8, 9 In the closed state, a voltage substantially equal to the image signal becomes the output voltage of the operational amplifier circuit 15. This is negative in the loop of the photoelectric conversion unit 5, the first switching unit 8, the amplification unit (the operational amplification circuit 15 and the resistor 16), the comparison amplification unit 10, the second switching unit 9, the current control unit 6, and the photoelectric conversion unit 5. This is because a feedback path is formed and the relationship between the non-inverting input and the inverting input of the comparison amplification unit 10 is in a so-called imaginary short state.

よって、光電変換部5における発生電流は、画像信号線2に与えられた画像信号に応じた値であり、その発生電流は発光部4が発光し検知された光量が基づいているので、結果として発光部4の発光する光量は、画像信号線2に与えられた画像信号に応じた値になる。換言すると、発光部4と光電変換部4とからなる光結合部40における光電変換を、発光部4に流れる電流の光を介した検出とみれば、負帰還により発光部4に流れる電流のばらつきを原理的になくしたものといえる。ゆえに画素ごとの輝度ばらつきがなくなる。画像信号保持用コンデンサ7には、上記負帰還路により電流制御部6の入力電圧対出力電流の特性ばらつきにかかわらず発光部4の電流値を一定にするような電圧が発生している。   Therefore, the generated current in the photoelectric conversion unit 5 is a value corresponding to the image signal given to the image signal line 2, and the generated current is based on the amount of light detected by the light emitting unit 4. The amount of light emitted by the light emitting unit 4 is a value corresponding to the image signal given to the image signal line 2. In other words, if photoelectric conversion in the optical coupling unit 40 composed of the light emitting unit 4 and the photoelectric conversion unit 4 is regarded as detection through the light of the current flowing through the light emitting unit 4, variation in the current flowing through the light emitting unit 4 due to negative feedback. It can be said that the principle is lost. Therefore, there is no luminance variation for each pixel. The image signal holding capacitor 7 generates a voltage that makes the current value of the light emitting unit 4 constant regardless of variations in characteristics of the input voltage versus the output current of the current control unit 6 due to the negative feedback path.

表示装置としては、このような画素構成のものを縦(列)横(行)方向に並べるのが、もっとも容易な構成である。この場合には、画像信号線2は、長破線20のように延長されて縦(列)方向の他の画素に共通に接続されるように設けられる。破線2A、2Bに相当する導線は設けない。しかしこの場合には、各画素ごとに第1および第2のスイッチング部8、9のほかに比較増幅部10、演算増幅回路15、抵抗16を設け作り込む必要が生じるので、開口率(表示面積に対する正味の発光部面積の割合)の点で不利である。   As a display device, it is the easiest configuration to arrange such pixel configurations in the vertical (column) and horizontal (row) directions. In this case, the image signal line 2 is provided so as to extend like a long broken line 20 and be connected in common to other pixels in the vertical (column) direction. No conducting wire corresponding to the broken lines 2A and 2B is provided. However, in this case, since it is necessary to provide the comparison amplification unit 10, the operational amplification circuit 15, and the resistor 16 in addition to the first and second switching units 8 and 9 for each pixel, the aperture ratio (display area) This is disadvantageous in terms of the ratio of the net light-emitting portion area to.

そこで、比較増幅部10、演算増幅回路15、抵抗16については各画素に設ける必要のない構成も考えられる。それは、演算増幅回路15の反転入力端子に合流するように描かれる破線2Bおよび比較増幅器10の出力から延長して描かれる破線2Aを導線として設け、これらの導線を列方向の各画素に対して共通に接続を行う。長破線20相当の導線は設けない。破線2B、2Aのつながる図示していない各画素では比較増幅部10、演算増幅回路15、抵抗16を設けない。   Therefore, a configuration in which the comparison amplification unit 10, the operational amplification circuit 15, and the resistor 16 do not need to be provided in each pixel is also conceivable. It is provided with a broken line 2B drawn so as to merge with the inverting input terminal of the operational amplifier circuit 15 and a broken line 2A drawn extended from the output of the comparison amplifier 10 as conductive lines, and these conductive lines are provided for each pixel in the column direction. Connect in common. No conducting wire corresponding to the long broken line 20 is provided. In each pixel (not shown) to which the broken lines 2B and 2A are connected, the comparison amplification unit 10, the operational amplification circuit 15, and the resistor 16 are not provided.

このような構成は、すなわち、第1スイッチング部8が列方向各画素の光電変換部5の出力を選択するマルチプレクサになり、第2スイッチング部9が列方向各画素の画像信号保持用コンデンサ7へ比較増幅部10の出力を振り分けるデマルチプレクサとなる構成である。これらの選択、振り分けが走査線3に与えられた画素選択信号によりなされることになる。このような構成によれば、比較増幅器10、演算増幅回路15、抵抗16は各列に最低ではひとつありば足り、表示装置としての表示面に作り込む必要をなくし得るので開口率増大という意味で大きな効果が得られる。なお、各列にひとつずつではなく、各列における複数の行の画素ごとにひとつずつ設けるという構成も採用し得る。   In this configuration, that is, the first switching unit 8 becomes a multiplexer that selects the output of the photoelectric conversion unit 5 of each pixel in the column direction, and the second switching unit 9 goes to the image signal holding capacitor 7 of each pixel in the column direction. The demultiplexer distributes the output of the comparison amplification unit 10. These selection and distribution are performed by a pixel selection signal given to the scanning line 3. According to such a configuration, at least one comparison amplifier 10, an operational amplifier circuit 15, and a resistor 16 are sufficient for each column, and it is not necessary to build in a display surface as a display device. A big effect is acquired. A configuration in which one pixel is provided for each pixel in a plurality of rows in each column instead of one in each column may be employed.

なお、演算増幅回路15と抵抗16による増幅部は、電流電圧変換型の増幅器であり、要は光電変換部5が発生する微弱な電流を電圧値出力で増幅する機能を有すればよいので、このような演算増幅回路の利用以外の構成を採用することもできる。例えば、定電圧に一端が接続された抵抗に光電変換部5が発生する電流を第1スイッチング部8を介して流し込み、抵抗の他端に発生する電圧を出力電圧とするような簡易な構成もあり得る。ただし、十分な増幅度を確保するため抵抗値が大きくなり寄生容量の影響が無視できなくなる場合もあることに注意が必要である。このような寄生容量が発生すると回路としての周波数特性が劣化し所望の動作速度が得られないことになる。   Note that the amplifying unit by the operational amplifier circuit 15 and the resistor 16 is a current-voltage conversion type amplifier. In short, it only needs to have a function of amplifying a weak current generated by the photoelectric conversion unit 5 with a voltage value output. A configuration other than the use of such an operational amplifier circuit may be employed. For example, a simple configuration in which a current generated by the photoelectric conversion unit 5 is supplied to a resistor having one end connected to a constant voltage via the first switching unit 8 and the voltage generated at the other end of the resistor is used as an output voltage is also possible. possible. However, it should be noted that the resistance value increases to ensure sufficient amplification, and the influence of parasitic capacitance may not be negligible. When such parasitic capacitance occurs, the frequency characteristics of the circuit deteriorate and a desired operation speed cannot be obtained.

図2は、図1中に示した発光部4および光電変換部5からなる光結合部40の構成を模式的に示す断面図である。図2において、図1に示した構成要素と同一のものには同一符号を付してある。図2に示すように、発光部4および光電変換部5とは、同一のガラス基板41上に隣り合って形成され得る。   FIG. 2 is a cross-sectional view schematically showing a configuration of the optical coupling unit 40 including the light emitting unit 4 and the photoelectric conversion unit 5 shown in FIG. 2, the same components as those shown in FIG. 1 are denoted by the same reference numerals. As shown in FIG. 2, the light emitting unit 4 and the photoelectric conversion unit 5 can be formed adjacent to each other on the same glass substrate 41.

発光部4は、ガラス基板41上に層状に形成された発光部アノード電極42、発光部アノード電極42上に積層形成された有機EL層44、有機EL層44上に積層形成された共通カソード電極45により構成される。また、光電変換部5は、ガラス基板41上に層上に形成された光電変換部アノード電極43、光電変換部アノード電極43上に積層形成された有機EL層44、有機EL層44上に積層形成された共通カソード電極45により構成される。すなわち、発光部4と光電変換部5とは、そのアノード電極のみが別であり、その他の、ガラス基板41、有機EL層44、共通カソード電極45は共通であり、構成上極めて整合性がよい。共通カソード電極45には図1からもわかるようにグラウンドレベルの電圧が付与される。   The light emitting unit 4 includes a light emitting unit anode electrode 42 formed in a layer on a glass substrate 41, an organic EL layer 44 formed on the light emitting unit anode electrode 42, and a common cathode electrode formed on the organic EL layer 44. 45. The photoelectric conversion unit 5 includes a photoelectric conversion unit anode electrode 43 formed on the glass substrate 41, an organic EL layer 44 formed on the photoelectric conversion unit anode electrode 43, and a stack on the organic EL layer 44. The common cathode electrode 45 is formed. That is, the light emitting unit 4 and the photoelectric conversion unit 5 are different from each other only in the anode electrode, and the other glass substrate 41, the organic EL layer 44, and the common cathode electrode 45 are common, and the configuration is extremely consistent. . As can be seen from FIG. 1, a ground level voltage is applied to the common cathode electrode 45.

発光部4の発光する光は、図示するように、一部がガラス基板41の方向に進行しこれが表示装置としての直接の発光になる。一方、他の一部は、有機EL層44内を層方向に進行し光電変換部5の有機EL層44で受光され、光検出される。一般に、発光部4が発光する光のうちガラス基板41の方向に進行する割合と有機EL層44内を層方向に進行する割合とでは、後者の方が大きいことが知られている。なお、図2では、発光部4の平面的な面積と光電変換部5のそれとが同程度に示されているが、実用上は、開口率を考慮して光電変換部5の方をより小さくしてよい。   As shown in the drawing, a part of the light emitted from the light emitting unit 4 travels in the direction of the glass substrate 41, and this becomes direct light emission as a display device. On the other hand, the other part proceeds in the layer direction in the organic EL layer 44 and is received and detected by the organic EL layer 44 of the photoelectric conversion unit 5. In general, it is known that the latter is larger in the proportion of light emitted from the light emitting section 4 in the direction of the glass substrate 41 and the proportion in the organic EL layer 44 in the layer direction. In FIG. 2, the planar area of the light emitting unit 4 and that of the photoelectric conversion unit 5 are shown to be approximately the same, but in practice, the photoelectric conversion unit 5 is made smaller in consideration of the aperture ratio. You can do it.

図2に示すように、発光部4と光電変換部5とは極めて緊密に光結合する構成に形成することができる。換言すると、光電変換部5は、光を介して発光部4に流れる電流を高精度に検出するという機能を有することができる。   As shown in FIG. 2, the light emitting unit 4 and the photoelectric conversion unit 5 can be formed in a configuration in which optical coupling is extremely tight. In other words, the photoelectric conversion unit 5 can have a function of detecting the current flowing through the light emitting unit 4 through light with high accuracy.

図3は、図1にブロック図として示した実施形態における各ブロックに具体的な素子を適用した例を示す回路図である。図3において図1と同一相当の構成要素には同一符号を付してある。この例では、電流制御部6、第1スイッチング部8、および第2スイッチング部9に、nチャネルトランジスタ6a、8a、9aをそれぞれ用いている。トランジスタ6a、8a、9aは周知のようにガラス基板上に形成された薄膜MOSトランジスタとすることができる。また、特にアモルファスシリコンによるトランジスタとすることができる。   FIG. 3 is a circuit diagram showing an example in which specific elements are applied to each block in the embodiment shown as a block diagram in FIG. 3, the same reference numerals are given to the same components as those in FIG. In this example, n-channel transistors 6 a, 8 a, and 9 a are used for the current control unit 6, the first switching unit 8, and the second switching unit 9, respectively. As is well known, the transistors 6a, 8a and 9a can be thin film MOS transistors formed on a glass substrate. In particular, the transistor can be made of amorphous silicon.

nチャネルトランジスタ6a、8a、9aの接続について補足すると、次のようである。トランジスタ6aは、ソースを発光部4のアノードに接続し、ドレインを電源線1に接続する。そしてゲートを画像信号保持用コンデンサ7の一端に接続する。トランジスタ8aは、ゲートを走査線3に、ドレインを光電変換部5の一端に、ソースを演算増幅回路15の反転入力端子にそれぞれ接続する。トランジスタ9aは、ゲートを走査線3に、ドレインを比較増幅部10の出力に、ソースを画像信号保持用コンデンサ7の一端にそれぞれ接続する。なおトランジスタ8a、9aはスイッチング動作させるものなのでソースとドレインを逆にすることもできる。   Supplementing the connection of the n-channel transistors 6a, 8a, 9a is as follows. The transistor 6 a has a source connected to the anode of the light emitting unit 4 and a drain connected to the power supply line 1. The gate is connected to one end of the image signal holding capacitor 7. The transistor 8 a has a gate connected to the scanning line 3, a drain connected to one end of the photoelectric conversion unit 5, and a source connected to the inverting input terminal of the operational amplifier circuit 15. The transistor 9 a has a gate connected to the scanning line 3, a drain connected to the output of the comparison amplifier 10, and a source connected to one end of the image signal holding capacitor 7. Since the transistors 8a and 9a perform switching operation, the source and drain can be reversed.

図4は、本発明の別の実施形態に係る有機EL表示装置における特定の画素の構成を示すブロック図である。図4においてすでに説明した構成要素と同一相当のものには同一符号を付し、その説明を省略する。この実施形態では、図1に示した実施形態と異なり画像信号保持用コンデンサ7aの他端をグラウンドではなく電源線1に接続するようにしている。このようなコンデンサ7とコンデンサ7aとの違いによる画素としての動作上の違いはない。   FIG. 4 is a block diagram showing the configuration of a specific pixel in an organic EL display device according to another embodiment of the present invention. Components identical to those already described in FIG. 4 are denoted by the same reference numerals and description thereof is omitted. In this embodiment, unlike the embodiment shown in FIG. 1, the other end of the image signal holding capacitor 7a is connected to the power line 1 instead of the ground. There is no difference in operation as a pixel due to the difference between the capacitor 7 and the capacitor 7a.

図5は、図4にブロック図として示した実施形態における各ブロックに具体的な素子を適用した例を示す回路図である。図5において図4と同一相当の構成要素には同一符号を付してある。この例では、電流制御部6、第1スイッチング部8、および第2スイッチング部9に、pチャネルトランジスタ6b、8b、9bをそれぞれ用いている。トランジスタ6b、8b、9bは周知のようにガラス基板上に形成された薄膜MOSトランジスタとすることができる。また、特にアモルファスシリコンによるトランジスタとすることができる。   FIG. 5 is a circuit diagram showing an example in which specific elements are applied to each block in the embodiment shown as a block diagram in FIG. In FIG. 5, the same reference numerals are given to the same components as in FIG. In this example, p-channel transistors 6b, 8b, and 9b are used for the current control unit 6, the first switching unit 8, and the second switching unit 9, respectively. As is well known, the transistors 6b, 8b, 9b can be thin film MOS transistors formed on a glass substrate. In particular, the transistor can be made of amorphous silicon.

pチャネルトランジスタ6b、8b、9bの接続について補足すると、次のようである。トランジスタ6bは、ドレインを発光部4のアノードに接続し、ソースを電源線1に接続する。そしてゲートを画像信号保持用コンデンサ7aの一端に接続する。トランジスタ8bは、ゲートを走査線3に、ソースを光電変換部5の一端に、ドレインを演算増幅回路15の反転入力端子にそれぞれ接続する。トランジスタ9bは、ゲートを走査線3に、ソースを比較増幅部10の出力に、ドレインを画像信号保持用コンデンサ7aの一端にそれぞれ接続する。なおトランジスタ8b、9bはスイッチング動作させるものなのでソースとドレインを逆にすることもできる。   Supplementing the connection of the p-channel transistors 6b, 8b, and 9b is as follows. The transistor 6 b has a drain connected to the anode of the light emitting unit 4 and a source connected to the power supply line 1. The gate is connected to one end of the image signal holding capacitor 7a. The transistor 8 b has a gate connected to the scanning line 3, a source connected to one end of the photoelectric conversion unit 5, and a drain connected to the inverting input terminal of the operational amplifier circuit 15. The transistor 9b has a gate connected to the scanning line 3, a source connected to the output of the comparison amplifier 10, and a drain connected to one end of the image signal holding capacitor 7a. Since the transistors 8b and 9b are for switching operation, the source and drain can be reversed.

図6は、すでに説明したものの繰り返しではあるが、図1に示した構成を有する画素を利用して縦横に画素配置した場合の電源線1、画像信号線2、走査線3と各画素との接続を示す図である。図6において、すでに説明した構成要素には同一番号を付してある。図6に示すように、画素11、12、…と横(行)方向に配置し、画素11、21、…と縦(列)方向に配置することにより全体としてマトリクス状の画素配置としている。この図から比較増幅部10、演算増幅回路15、抵抗16が各画素ごとに必要ないことが容易に理解できる。   FIG. 6 is a repetition of what has already been described. However, when the pixels having the configuration shown in FIG. 1 are used to arrange the pixels vertically and horizontally, the power line 1, the image signal line 2, the scanning line 3, and each pixel are arranged. It is a figure which shows a connection. In FIG. 6, the components already described are given the same numbers. As shown in FIG. 6, the pixels 11, 12,... Are arranged in the horizontal (row) direction, and the pixels 11, 21,. From this figure, it can be easily understood that the comparison amplifier 10, the operational amplifier circuit 15, and the resistor 16 are not required for each pixel.

本発明の一実施形態に係る有機EL表示装置における特定の画素の構成を示すブロック図。1 is a block diagram showing a configuration of a specific pixel in an organic EL display device according to an embodiment of the present invention. 図1中に示した発光部および光電変換部の構成を模式的に示す断面図。Sectional drawing which shows typically the structure of the light emission part and photoelectric conversion part which were shown in FIG. 図1にブロック図として示した実施形態における各ブロックに具体的な素子を適用した例を示す回路図。The circuit diagram which shows the example which applied the specific element to each block in embodiment shown as a block diagram in FIG. 本発明の別の実施形態に係る有機EL表示装置における特定の画素の構成を示すブロック図。The block diagram which shows the structure of the specific pixel in the organic electroluminescence display which concerns on another embodiment of this invention. 図4にブロック図として示した実施形態における各ブロックに具体的な素子を適用した例を示す回路図。The circuit diagram which shows the example which applied the specific element to each block in embodiment shown as a block diagram in FIG. 図1に示した構成を有する画素を利用して縦横に画素配置した場合の電源線1、画像信号線2、走査線3と各画素との接続を示す図。FIG. 3 is a diagram showing connections between a power supply line 1, an image signal line 2, a scanning line 3 and each pixel when pixels are arranged vertically and horizontally using the pixels having the configuration shown in FIG. 1. 比較例としての有機EL表示装置の画素ごとの構成を示す等価回路図。The equivalent circuit diagram which shows the structure for every pixel of the organic electroluminescence display as a comparative example.

符号の説明Explanation of symbols

1…電源線、2…画像信号線、3…走査線、4…発光部、5…光電変換部、6…電流制御部、6a…nチャネルトランジスタ、6b…pチャネルトランジスタ、7、7a…画像信号保持用コンデンサ、8…第1スイッチング部、8a…nチャンルトランジスタ、8b…pチャネルトランジスタ、9…第2スイッチング部、9a…nチャネルトランジスタ、9b…pチャネルトランジスタ、10…比較増幅部、11、12、21、22…画素、15…演算増幅回路、16…抵抗、40…光結合部、41…ガラス基板、42…発光部アノード電極、43…光電変換部アノード電極、44…有機EL層、45…共通カソード電極。   DESCRIPTION OF SYMBOLS 1 ... Power supply line, 2 ... Image signal line, 3 ... Scanning line, 4 ... Light emission part, 5 ... Photoelectric conversion part, 6 ... Current control part, 6a ... N channel transistor, 6b ... P channel transistor, 7, 7a ... Image Signal holding capacitor, 8... First switching unit, 8a... N channel transistor, 8b... P channel transistor, 9... Second switching unit, 9a... N channel transistor, 9b. , 12, 21, 22 ... pixels, 15 ... operational amplifier circuit, 16 ... resistor, 40 ... optical coupling part, 41 ... glass substrate, 42 ... light emitting part anode electrode, 43 ... photoelectric conversion part anode electrode, 44 ... organic EL layer 45: Common cathode electrode.

Claims (6)

複数の画素がマトリックス状に配置され、前記複数の画素の中から画素選択信号に従って画素が選択され、前記選択された画素が画像信号に従って発光させられる有機EL表示装置であって、
発光部と、
前記発光部に流す電流を制御する電流制御部と、
前記発光部が発光する光を検知して電流を発生する光電変換部と、
前記画素選択信号に従って、前記発生された電流の伝送/非伝送の切り替えを行う第1のスイッチング部と、
前記第1のスイッチング部より伝送された前記電流を電流電圧変換して増幅する増幅部と、
前記増幅により得られた電圧値と前記画像信号に相当する電圧値とを比較増幅する比較増幅部と、
前記画素選択信号に従って、前記比較増幅された結果である電圧値の伝送/非伝送の切り替えを行う第2のスイッチング部と、
前記第2のスイッチング部より伝送された前記電圧値により充放電がされる画像信号保持用コンデンサとを具備し、
前記電流制御部が、前記画像信号保持用コンデンサの充電電圧により前記発光部に流す前記電流を制御すること
を特徴とする有機EL表示装置。
An organic EL display device in which a plurality of pixels are arranged in a matrix, a pixel is selected according to a pixel selection signal from the plurality of pixels, and the selected pixel is caused to emit light according to an image signal,
A light emitting unit;
A current control unit for controlling a current flowing through the light emitting unit;
A photoelectric conversion unit that detects light emitted from the light emitting unit and generates a current;
A first switching unit for switching transmission / non-transmission of the generated current according to the pixel selection signal;
An amplifying unit for converting the current transmitted from the first switching unit to current-voltage conversion and amplifying;
A comparison amplifier for comparing and amplifying the voltage value obtained by the amplification and the voltage value corresponding to the image signal;
A second switching unit that switches between transmission and non-transmission of a voltage value that is a result of the comparison amplification in accordance with the pixel selection signal;
An image signal holding capacitor that is charged and discharged by the voltage value transmitted from the second switching unit;
The organic EL display device, wherein the current control unit controls the current flowing through the light emitting unit by a charging voltage of the image signal holding capacitor.
前記発光部と前記光電変換部とが、発光および光電変換を行う共通の層と、前記共通の層の一方の側に積層形成された共通のカソード電極とを有し、
前記発光部が、前記共通の層の前記一方の側とは異なる側に積層形成された発光部アノード電極をさらに有し、
前記光電変換部が、前記共通の層の前記一方の側とは異なる側であって前記発光部アノード電極に隣接する位置に積層形成された光電変換部アノード電極をさらに有すること
を特徴とする請求項1記載の有機EL表示装置。
The light emitting unit and the photoelectric conversion unit have a common layer that performs light emission and photoelectric conversion, and a common cathode electrode that is stacked on one side of the common layer,
The light emitting unit further includes a light emitting unit anode electrode formed on a side different from the one side of the common layer,
The photoelectric conversion unit further includes a photoelectric conversion unit anode electrode formed on a side different from the one side of the common layer and adjacent to the light emitting unit anode electrode. Item 10. An organic EL display device according to Item 1.
前記発光部、前記電流制御部、前記光電変換部、前記第1のスイッチング部、前記第2のスイッチング部、および前記画像信号保持用コンデンサが、前記複数の画素それぞれにおのおのあり、
前記増幅部および比較増幅部が、前記マトリックス状の画素の列ごとにひとつずつあり、
前記増幅部への前記第1のスイッチング部からの接続が、該比較増幅部が属する画素の列に含まれる画素すべてからなされ、
前記比較増幅部からの前記第2のスイッチング部への接続が、該比較増幅部が属する画素の列の含まれる画素すべてに対してなされていること
を特徴とする請求項1記載の有機EL表示装置。
The light emitting unit, the current control unit, the photoelectric conversion unit, the first switching unit, the second switching unit, and the image signal holding capacitor are respectively provided in the plurality of pixels.
The amplification unit and the comparison amplification unit are provided one for each row of the matrix-like pixels,
The connection from the first switching unit to the amplifying unit is made from all the pixels included in the column of pixels to which the comparative amplifying unit belongs,
2. The organic EL display according to claim 1, wherein the connection from the comparison amplification unit to the second switching unit is made for all pixels included in a column of pixels to which the comparison amplification unit belongs. apparatus.
前記電流制御部が、nチャネル薄膜トランジスタであり、前記発光部に流す前記電流をドレイン・ソース電流として出力し、該電流の制御がゲートに供給された前記画像信号保持用コンデンサの充電電圧によりなされることを特徴とする請求項1記載の有機EL表示装置。   The current control unit is an n-channel thin film transistor, outputs the current flowing through the light emitting unit as a drain / source current, and the current is controlled by a charging voltage of the image signal holding capacitor supplied to the gate. The organic EL display device according to claim 1. 前記電流制御部が、pチャネル薄膜トランジスタであり、前記発光部に流す前記電流をソース・ドレイン電流として出力し、該電流の制御がゲートに供給された前記画像信号保持用コンデンサの充電電圧によりなされることを特徴とする請求項1記載の有機EL表示装置。   The current control unit is a p-channel thin film transistor, outputs the current flowing through the light emitting unit as a source / drain current, and the current is controlled by a charging voltage of the image signal holding capacitor supplied to the gate. The organic EL display device according to claim 1. 前記電流制御部が、アモルファスシリコン薄膜トランジスタであることを特徴とする請求項4または5記載の有機EL表示装置。   6. The organic EL display device according to claim 4, wherein the current control unit is an amorphous silicon thin film transistor.
JP2004108129A 2004-03-31 2004-03-31 Organic el display Pending JP2005292503A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005331933A (en) * 2004-04-20 2005-12-02 Dainippon Printing Co Ltd Organic el display
WO2007040251A1 (en) 2005-10-05 2007-04-12 Matsushita Electric Industrial Co., Ltd. Video signal transmission device
JP4841012B2 (en) * 2007-03-22 2011-12-21 パイオニア株式会社 Organic electroluminescence device, display device incorporating organic electroluminescence device, and power generation device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8194006B2 (en) * 2004-08-23 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method of the same, and electronic device comprising monitoring elements
US20070195728A1 (en) * 2006-02-17 2007-08-23 Shiwen Chen Automated method for constructing a routing infrastructure in an ad-hoc network
TWI415075B (en) * 2010-09-21 2013-11-11 Au Optronics Corp Switchable organic electro-luminescence display panel and switchable organic electro-luminescence display circuit
DE102012014716A1 (en) 2012-07-25 2014-05-15 Dräger Medical GmbH Method for improving the illumination of a footprint

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4192690B2 (en) 1997-02-17 2008-12-10 セイコーエプソン株式会社 Luminescent display device
US6462722B1 (en) 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
CN100341042C (en) 1997-02-17 2007-10-03 精工爱普生株式会社 Display device
JP2000294026A (en) 1999-04-09 2000-10-20 Matsushita Electric Ind Co Ltd Backlight device
JP2001085160A (en) 1999-09-20 2001-03-30 Nec Corp Light emitting element with function of correcting light emission output
US6392617B1 (en) * 1999-10-27 2002-05-21 Agilent Technologies, Inc. Active matrix light emitting diode display
JP2002091377A (en) 2000-09-11 2002-03-27 Hitachi Ltd Organic el display device
US6774578B2 (en) 2000-09-19 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Self light emitting device and method of driving thereof
JP3865209B2 (en) 2000-09-19 2007-01-10 株式会社半導体エネルギー研究所 Self-luminous device, electronic equipment
US6396217B1 (en) 2000-12-22 2002-05-28 Visteon Global Technologies, Inc. Brightness offset error reduction system and method for a display device
US6724511B2 (en) 2001-11-16 2004-04-20 Thin Film Electronics Asa Matrix-addressable optoelectronic apparatus and electrode means in the same
US6720942B2 (en) * 2002-02-12 2004-04-13 Eastman Kodak Company Flat-panel light emitting pixel with luminance feedback
JP3915907B2 (en) 2002-08-30 2007-05-16 カシオ計算機株式会社 Light emission drive circuit, display device, and drive control method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005331933A (en) * 2004-04-20 2005-12-02 Dainippon Printing Co Ltd Organic el display
WO2007040251A1 (en) 2005-10-05 2007-04-12 Matsushita Electric Industrial Co., Ltd. Video signal transmission device
JP4841012B2 (en) * 2007-03-22 2011-12-21 パイオニア株式会社 Organic electroluminescence device, display device incorporating organic electroluminescence device, and power generation device

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