JP2005279320A - Exhaust gas treatment system, exhaust gas treatment method and exhaust gas treatment control system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an exhaust gas treatment system capable of avoiding stopping of a semiconductor manufacturing device by temporary stopping of an exhaust gas treatment device and realizing high productivity and low cost, an exhaust gas treatment method and an exhaust gas treatment control system. <P>SOLUTION: The exhaust gas treatment system is provided with a means 2b for unifying the exhaust gas discharged from a plurality of semiconductor manufacturing devices 1; a means 2c for distributing the unified exhaust gas to a plurality of gases; means 4, 5, 6 for controlling the distributed flow rates of the exhaust gases, respectively; and a plurality of exhaust gas treatment means 3 for introducing and treating the exhaust gases the flow rates of which are controlled, respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to processing of exhaust gas discharged from a semiconductor manufacturing apparatus, and more particularly to a processing system, a processing method, and a processing control system for exhaust gas discharged from a plurality of semiconductor manufacturing apparatuses.

In recent years, the influence of exhaust gas on the environment has become a major social problem. Exhaust gas discharged from the semiconductor manufacturing apparatus is no exception, and in particular, PFC (Perfluor Compound) gases such as CF ₄ and SF _{6 that} have a high warming potential used in the etching process and the like have stricter emission regulations. In order to comply with such regulations, it is necessary to install an exhaust gas treatment apparatus having a sufficient processing capacity for the exhaust gas flow rate discharged from the semiconductor manufacturing apparatus.

Normally, a plurality of semiconductor manufacturing apparatuses are used in manufacturing a semiconductor device. For example, as shown in FIG. 6, one exhaust gas processing apparatus is used for one or several semiconductor manufacturing apparatuses 201. 203 is installed. Then, the exhaust gas such as CF ₄ discharged by each semiconductor manufacturing apparatus 201 at 100 ml / min is diluted with ₂₀ to 30 l / min of N ₂ , and then introduced into the exhaust gas processing apparatus 203 through the pipe 202. After being rendered harmless by the treatment, it is released into the atmosphere via the general pipe 207. At this time, for example, assuming that the normal maximum flow rate discharged from three semiconductor manufacturing apparatuses is 30 l / min × 3, the exhaust gas processing apparatus takes into consideration the case where a large amount of exhaust gas is generated immediately after maintenance of each semiconductor manufacturing apparatus. In addition, a processing capacity of 100 to 200 l / min including a margin is required.

In such an exhaust gas treatment system, if the exhaust gas treatment device stops due to a failure or regular maintenance, the semiconductor manufacturing device that discharges the exhaust gas in the previous stage is also forced to stop. If the semiconductor manufacturing apparatus is temporarily stopped, a process cost for restarting is generated, and productivity is reduced due to a reduction in the apparatus operating rate. Therefore, in order to avoid such a stoppage of the manufacturing apparatus due to the temporary stoppage of the exhaust gas treatment apparatus, a technique is disclosed in which a combustion type exhaust gas treatment apparatus and a decontamination cylinder are installed and switched to one manufacturing apparatus. (See Patent Document 1).
JP-A-10-122539

  However, when a plurality of exhaust gas treatment apparatuses are provided for each manufacturing apparatus in this way, exhaust gas treatment apparatuses that are not always in operation are installed for each of the manufacturing apparatuses, resulting in a large loss in equipment costs.

  On the other hand, since the amount of exhaust gas discharged from the semiconductor manufacturing apparatus varies depending on the apparatus and fluctuates, the exhaust gas treatment apparatus can process the maximum total flow rate of the exhaust gas in each, and each can obtain a sufficient margin. There is a problem that it is necessary to arrange a considerable number of units and it is difficult to reduce the equipment cost.

  Therefore, the present invention eliminates the conventional problems, avoids the stop of the semiconductor manufacturing apparatus due to the temporary stop of the exhaust gas treatment apparatus, and realizes high productivity and low cost, an exhaust gas treatment system, an exhaust gas treatment method, and An object of the present invention is to provide an exhaust gas treatment control system.

  According to one aspect of the present invention, means for unifying exhaust gas discharged from a plurality of semiconductor manufacturing apparatuses, means for distributing the unified exhaust gas into a plurality of means, and means for controlling the distribution flow rate of the exhaust gas, respectively. There is provided an exhaust gas treatment system comprising a plurality of exhaust gas treatment means for introducing and treating the exhaust gas each having a controlled flow rate.

  In one embodiment of the present invention, the semiconductor manufacturing apparatus includes at least one of a CVD apparatus, an etching apparatus, and an ashing apparatus.

  In one embodiment of the present invention, the exhaust gas includes PFC gas.

  Furthermore, in one aspect of the present invention, the exhaust gas treatment means uses at least one of a catalyst system, a plasma system, and a combustion system.

  Moreover, according to one aspect of the present invention, the step of unifying the exhaust gas discharged from a plurality of semiconductor manufacturing apparatuses, the step of distributing the unified exhaust gas into a plurality, and the distribution flow rate of the exhaust gas are controlled. There is provided an exhaust gas treatment method comprising a step, a step of introducing the exhaust gas whose flow rate is controlled into a plurality of exhaust gas treatment means, and a step of treating the exhaust gas in the exhaust gas treatment means.

  In one aspect of the present invention, in the step of controlling the distribution flow rate, the flow rate is detected, and the distribution flow rate is adjusted to be a predetermined amount based on each detected flow rate data. An exhaust gas treatment method is provided.

  Furthermore, in one embodiment of the present invention, the semiconductor manufacturing apparatus includes at least one of a CVD apparatus, an etching apparatus, and an ashing apparatus.

  In one embodiment of the present invention, the exhaust gas includes PFC gas.

  Furthermore, in one aspect of the present invention, the exhaust gas treatment means uses at least one of a catalyst system, a plasma system, and a combustion system.

  In one aspect of the present invention, in the step of controlling the distribution flow rate, the flow rate is detected, and the distribution flow rate is adjusted to be a predetermined amount based on each detected flow rate data. Yes.

  Moreover, according to one aspect of the present invention, there is provided a control system that distributes exhaust gas discharged from a plurality of semiconductor manufacturing apparatuses and integrated into a plurality of exhaust gas processing means and processes the exhaust gas. A step of setting a distribution condition to the exhaust gas treatment means, a step of monitoring a flow rate, a step of calculating each distribution flow rate based on the distribution condition, and a step of adjusting to the calculated distribution flow rate There is provided an exhaust gas treatment control system comprising a step of treating the exhaust gas whose flow rate is adjusted respectively in the exhaust gas treatment means.

  In one aspect of the present invention, the distribution condition is set so as to be equally distributed to the plurality of exhaust gas treatment means or the exhaust gas treatment means selected from the plurality of exhaust gas treatment means. .

  Furthermore, in one aspect of the present invention, the distribution condition is set according to each processing capability of the plurality of exhaust gas processing means.

  In one aspect of the present invention, the distribution condition is set such that the distribution flow rate sequentially becomes a predetermined value in accordance with the priority order provided in the plurality of exhaust gas treatment means.

  In one aspect of the present invention, the distribution condition is set such that a distribution flow rate to a predetermined exhaust gas processing unit among the plurality of exhaust gas processing units is zero.

  Furthermore, in one aspect of the present invention, there is provided a backup exhaust gas treatment means common to the plurality of exhaust gas treatment means, and a switching means for switching each of the exhaust gas treatment means to the backup exhaust gas treatment means. An exhaust gas treatment control system is provided.

  According to one aspect of the present invention, an exhaust gas treatment system, an exhaust gas treatment method, and an exhaust gas treatment control capable of avoiding a stop of a semiconductor manufacturing apparatus due to a temporary stop of an exhaust gas treatment apparatus and realizing high productivity and low cost. A system can be provided.

  Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1)
In FIG. 1, the conceptual diagram of the waste gas processing system of this embodiment is shown. As shown in the drawing, the pipes 2a connected to the plurality of semiconductor manufacturing apparatuses 1 are all connected to the pipe 2b. The piping 2b is connected to each piping 2c, and is connected to the exhaust gas treatment device 3 , respectively. The pipe 2c is provided with a flow meter 4 and a valve 5, which are connected to a controller 6 and can be controlled. And the exhaust gas processing apparatus 3 is connected with the general piping 7 open | released in air | atmosphere. Note that the exhaust gas treatment device 3 needs to have a total processing capacity obtained by adding a predetermined margin to the maximum total exhaust gas amount discharged from the semiconductor manufacturing device 1 in consideration of stopping at a predetermined rate. It is.

  Using such an exhaust gas treatment system, the exhaust gas is treated, for example, according to the flow shown in FIG.

First, exhaust gas such as CF ₄ and SiF ₄ , for example, of 100 m / min is discharged from the semiconductor manufacturing apparatus 1 constituted by an etching apparatus / ashing apparatus (step 101). The discharged exhaust gas is diluted with, for example, N2 gas of _{20 to} 30 l / min, respectively, and is unified into the pipe 2b through the pipe 2a (step 102). After being unified, it is distributed by a plurality of pipes 2c (step 103).

  Here, as a distribution condition, the total flow rate is set to be equally divided by each exhaust gas treatment device 3, and is input to the controller 6 (step 104). Next, each flow rate data is detected by the flow meter 4 installed in each pipe 2 c (step 105) and transmitted to the controller 6. Based on the distribution condition and the flow rate data, the distribution flow rate is calculated (step 106).

  For example, when six exhaust gas treatment devices are used, when the total flow rate is 60 l / min, the distribution flow rate to each exhaust gas treatment device is adjusted to be 10 l / min.

The valve 5 is adjusted so that the distribution flow rate calculated in step 106 is obtained (step 107). The exhaust gas at a flow rate adjusted to a predetermined flow rate is introduced into the exhaust gas treatment device 3 and decomposed by adding, for example, H ₂ O and O ₂ and heating using a catalyst (step 108). A part (gas) of the detoxified exhaust gas is discharged from the general pipe 7 into the atmosphere (step 109).

In such an exhaust gas treatment system, as shown in FIG. 3, when the exhaust gas treatment device 3a is stopped due to failure or periodic maintenance, the distribution condition is set to 0 at the distribution flow rate to 3a, and the other exhaust gas treatment devices 3 ′. Enter settings to distribute evenly. Then, the distribution flow rate is calculated, the valve 5a is adjusted so that the measurement value in the flow meter 4a becomes 0, and other measurement values are obtained so that the measurement values in the other flow meters 4 ′ become the calculated distribution flow rate. Adjust valve 5 '. Then, the exhaust gas with the adjusted flow rate is introduced into each exhaust gas treatment device 3 ′ and decomposed in the same manner.

  For example, when six exhaust gas treatment apparatuses are used and one of them stops, when the total flow rate is 60 l / min, the distribution flow rate is adjusted to be 12 l / min. The exhaust gas treatment is continuously performed without stopping the apparatus.

  Thus, according to the exhaust gas treatment system of the present embodiment, it is no longer necessary to stop the semiconductor manufacturing apparatus when the exhaust gas treatment apparatus is stopped so far, and stable continuous operation is possible. The process cost can be suppressed.

  Further, the exhaust gas treatment apparatus needs to have a total processing capacity obtained by adding a predetermined margin to the maximum total exhaust gas amount discharged from the semiconductor manufacturing apparatus, but a margin for each semiconductor manufacturing apparatus is unnecessary. Therefore, compared with the case where an exhaust gas treatment apparatus is provided for each semiconductor manufacturing apparatus, the total processing capacity can be suppressed, and the equipment cost can be reduced.

(Embodiment 2)
In the present embodiment, the same exhaust gas treatment system as that in the first embodiment is used, but the distribution condition is set according to the treatment capacity of each exhaust gas treatment device.

For example, as in Embodiment 1, when six exhaust gas treatment devices are used, the maximum processable flow rates of the exhaust gas treatment devices a, b, c, d, e, and f are 20 l / min, 20 l / min, and 20 l, respectively. / Min, 20 l / min, 10 l / min, and 10 l / min, the distribution conditions are set so that the total flow rate is proportionally distributed to 2: 2: 2: 2: 1: 1. For example, when the total flow rate is 60 l / min and 50 l / min, as shown in Table 1,

It becomes. And when the exhaust gas treatment device 13a stops due to failure or periodic maintenance, the distribution flow rate to the exhaust gas treatment device a is set to 0 as the distribution condition, and the total flow rate is set to the remaining exhaust gas treatment devices b, c, d, e, f. To set proportional distribution. For example, when the total flow rate is 60 l / min and 50 l / min, as shown in Table 2,

It becomes.

  According to the present embodiment, the same effects as those of the first embodiment can be obtained, and the operation can be performed according to the processing capacity of the exhaust gas processing apparatus.

(Embodiment 3)
In the present embodiment, the same exhaust gas treatment system as in Embodiments 1 and 2 is used, but differs in that each exhaust gas treatment device is prioritized and the distribution conditions are set so as to be a predetermined value in order of preference.

For example, as in Embodiment 1, when six exhaust gas treatment devices are used, the maximum processable flow rates of the exhaust gas treatment devices a, b, c, d, e, and f are 20 l / min, 20 l / min, and 20 l, respectively. / Min, 20 l / min, 10 l / min, 10 l / min, prioritize in the order of a, e, b, f, c, d and set the distribution conditions so that the maximum processable flow rate is in order of priority. To do. For example, when the total flow rate is 60 l / min, 50 l / min, 40 l / min, as shown in Table 3,

It becomes. When the exhaust gas treatment device 23a is stopped due to failure or regular maintenance, the distribution flow rate to the exhaust gas treatment device 23a is set to 0 as the distribution condition, and the total flow rate is maximized in the order of the remaining exhaust gas treatment devices 23e, 23b, 23f, and 23c. Set the distribution conditions to achieve the possible flow rate. For example, similarly, when the total flow rate is 60 l / min, 50 l / min, and 40 l / min, as shown in Table 4,

It becomes.

  According to the present embodiment, the same effects as those of the first embodiment can be obtained, and the operation frequency of each exhaust gas treatment device can be changed, so that the maintenance cycle can be shifted. In the present embodiment, the distribution flow rate is set to the maximum processable flow rate of each exhaust gas treatment device, but may be set to a predetermined value. The priority order can be changed as appropriate.

(Embodiment 4)
In this embodiment, the same exhaust gas treatment system as in Embodiments 1 to 3 is used. However, as shown in FIG. 4, a common backup exhaust gas treatment device 13 ′ and a switch 18 to the backup exhaust gas treatment device are provided. Is different in that.

  For example, in a state where no exhaust gas treatment device is stopped, all the changeover switches 18 are OFF, but when any exhaust gas treatment device stops, the changeover switch corresponding to the stopped device is turned ON. Thus, the backup exhaust gas treatment device 13 ′ can be operated in place of the stopped exhaust gas treatment device.

  According to this embodiment, since the exhaust gas treatment device for backup is common to all the exhaust gas treatment devices, it is not necessary to provide a backup exhaust gas treatment device for each exhaust gas treatment device, and it is possible to reduce the equipment cost. Become.

  In this embodiment, a backup of only the exhaust gas treatment apparatus is provided, but a backup including a control system such as a flow meter and a valve may be provided. In this case, the changeover switch is provided in the preceding stage of the control system, and the control system is connected to the controller.

  In these embodiments, an etching apparatus and an ashing apparatus are used as the semiconductor manufacturing apparatus, but the present invention can also be applied to a plasma CVD apparatus, a thermal CVD apparatus, or the like that generates exhaust gas. Also, these different types of devices may be mixed. Further, the gas species to be discharged are not limited to PFC, and may include other harmful substances.

  The means for unifying the exhaust gas from each semiconductor manufacturing apparatus is not particularly limited, but can be configured by appropriately piping in the apparatus layout. For example, as shown in FIG. 5, a pipe 22a from the semiconductor manufacturing apparatus 21 and a pipe 22c connected to the exhaust gas treatment apparatus are connected, and the pipe 22b is connected to the pipe 22b so as to be unified. Further, the flow rate may be detected when the exhaust gas is unified. In this case, after each distribution flow rate is calculated based on the detected total flow rate and distribution conditions, flow rate detection for adjusting to the distribution flow rate introduced into each exhaust gas treatment device is performed.

  The distribution flow rate supplied to the exhaust gas treatment device is adjusted by the valve. However, the flow rate may be adjusted on the supply side, and the exhaust gas treatment device may be provided with a flow rate adjusting means. In this case, each flow rate adjusting means in each exhaust gas treatment apparatus is connected to the controller.

  Although a catalyst system is used for the exhaust gas treatment apparatus, it is preferable in treating PFC gas. In addition, a known exhaust gas treatment system such as a plasma system or a combustion system can be used.

  In addition, this invention is not limited to embodiment mentioned above. Various other modifications can be made without departing from the scope of the invention.

The figure which shows the waste gas processing system by one embodiment of this invention. The figure which shows the flowchart of the waste gas processing system by one embodiment of this invention. The figure which shows the waste gas processing system by one embodiment of this invention. The figure which shows the waste gas processing system by one embodiment of this invention. The figure which shows the waste gas processing system by one embodiment of this invention. The figure which shows the conventional waste gas processing system.

Explanation of symbols

1 , 11 , 21 , 201 Semiconductor manufacturing apparatuses 2 a, 2 b, 2 c, 12 a, 12 b, 12 c, 22 a, 22 b, 22 c, 202 Piping
3 , 3a, 3 ' , 13 , 23 , 203 Exhaust gas treatment device 13' Backup exhaust gas treatment device
4 , 4a, 4 ' , 14 , 24 flowmeter
5 , 5a, 5 ' , 15 , 25 Valve 6, 16, 26 Controller 7, 17 , 27, 207 General piping 18 selector switch

Claims (6)

Means for unifying exhaust gases discharged from a plurality of semiconductor manufacturing apparatuses;
Means for distributing the unified exhaust gas into a plurality of parts;
Means for controlling the distribution flow rate of the exhaust gas,
An exhaust gas treatment system comprising a plurality of exhaust gas treatment means for introducing and treating the exhaust gas each having a controlled flow rate. The means for controlling the distribution flow rate, respectively,
Flow rate detection means for detecting the flow rate;
Flow rate adjusting means for adjusting the flow rate;
2. The exhaust gas treatment according to claim 1, further comprising a controller that controls each of the flow rate adjusting units based on flow rate data from each of the flow rate detection units so that each of the distributed flow rates becomes a predetermined amount. system. A process of unifying exhaust gases discharged from a plurality of semiconductor manufacturing apparatuses;
A process of distributing the unified exhaust gas into a plurality of parts;
Respectively controlling the distribution flow rate of the exhaust gas;
Introducing the exhaust gas whose flow rate is controlled into a plurality of exhaust gas treatment means,
The exhaust gas treatment means includes a step of treating exhaust gas.   4. The exhaust gas treatment method according to claim 3, wherein in the step of controlling the distribution flow rate, the flow rate is detected, and the distribution flow rate is adjusted to be a predetermined amount based on each detected flow rate data. . A control system that distributes exhaust gas discharged from a plurality of semiconductor manufacturing apparatuses and is integrated in correspondence with a plurality of exhaust gas processing means, and processes this,
Setting distribution conditions to a plurality of exhaust gas treatment means;
Detecting the flow rate; and
Calculating each distribution flow rate based on the distribution conditions;
Adjusting to the calculated distribution flow rate;
An exhaust gas treatment control system comprising a step of treating exhaust gas whose flow rate is adjusted in the exhaust gas treatment means.   6. The exhaust gas treatment control system according to claim 5, further comprising backup exhaust gas treatment means common to the plurality of exhaust gas treatment means, and switching means for switching each of the exhaust gas treatment means to the backup exhaust gas treatment means. .

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